WO2000062331A3 - Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium - Google Patents

Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium Download PDF

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Publication number
WO2000062331A3
WO2000062331A3 PCT/US2000/008671 US0008671W WO0062331A3 WO 2000062331 A3 WO2000062331 A3 WO 2000062331A3 US 0008671 W US0008671 W US 0008671W WO 0062331 A3 WO0062331 A3 WO 0062331A3
Authority
WO
WIPO (PCT)
Prior art keywords
germanium
silicon carbide
crystalline silicon
semiconductor heterostructures
semiconductor
Prior art date
Application number
PCT/US2000/008671
Other languages
French (fr)
Other versions
WO2000062331A9 (en
WO2000062331A2 (en
Inventor
James Kolodzey
Gary Katulka
Cyril Guedj
Original Assignee
Univ Delaware
James Kolodzey
Gary Katulka
Cyril Guedj
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Delaware, James Kolodzey, Gary Katulka, Cyril Guedj filed Critical Univ Delaware
Priority to AU58661/00A priority Critical patent/AU5866100A/en
Publication of WO2000062331A2 publication Critical patent/WO2000062331A2/en
Publication of WO2000062331A3 publication Critical patent/WO2000062331A3/en
Publication of WO2000062331A9 publication Critical patent/WO2000062331A9/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

A semiconductor heterostructure (a) is formed by mixing the elemental semiconductor germanium (Ge) with the compound semiconductor silicon carbide (SiC) to form an alloy of silicon carbide: germanium (SiC:Ge). The alloy (SiCGe) could be used alone or in multilayered structures with other semiconductors to improve the performance of electronic and optical devices and circuits.
PCT/US2000/008671 1999-04-02 2000-03-31 Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium WO2000062331A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU58661/00A AU5866100A (en) 1999-04-02 2000-03-31 Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12755499P 1999-04-02 1999-04-02
US60/127,554 1999-04-02

Publications (3)

Publication Number Publication Date
WO2000062331A2 WO2000062331A2 (en) 2000-10-19
WO2000062331A3 true WO2000062331A3 (en) 2001-03-08
WO2000062331A9 WO2000062331A9 (en) 2002-04-04

Family

ID=22430710

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/008671 WO2000062331A2 (en) 1999-04-02 2000-03-31 Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium

Country Status (2)

Country Link
AU (1) AU5866100A (en)
WO (1) WO2000062331A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7183593B2 (en) 2003-12-05 2007-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Heterostructure resistor and method of forming the same
DE102005049932A1 (en) * 2005-10-19 2007-04-26 Sicrystal Ag Growth of silicon carbide-germanium-volume mixed crystals, comprises producing silicon-, carbon- and germanium gas phase from two source materials containing silicon, carbon and germanium by sublimation and evaporation
US9009064B2 (en) 2006-03-31 2015-04-14 Ebay Inc. Contingent fee advertisement publishing service provider for interactive TV media system and method
US10102542B2 (en) * 2014-01-31 2018-10-16 Walmart Apollo, Llc Optimization and attribution of marketing resources
JP6728097B2 (en) * 2017-04-24 2020-07-22 株式会社東芝 Semiconductor device, method of manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator
CN115422729A (en) * 2022-08-19 2022-12-02 电子科技大学长三角研究院(湖州) Method for improving single-layer GaSe photocatalytic performance

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4495262A (en) * 1982-05-06 1985-01-22 Konishiroku Photo Industry Co., Ltd. Photosensitive member for electrophotography comprises inorganic layers
US5272096A (en) * 1992-09-29 1993-12-21 Motorola, Inc. Method for making a bipolar transistor having a silicon carbide layer
US5401952A (en) * 1991-10-25 1995-03-28 Canon Kabushiki Kaisha Signal processor having avalanche photodiodes
US5604626A (en) * 1995-02-10 1997-02-18 Donnelly Corporation Photochromic devices
US5646073A (en) * 1995-01-18 1997-07-08 Lsi Logic Corporation Process for selective deposition of polysilicon over single crystal silicon substrate and resulting product

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4495262A (en) * 1982-05-06 1985-01-22 Konishiroku Photo Industry Co., Ltd. Photosensitive member for electrophotography comprises inorganic layers
US5401952A (en) * 1991-10-25 1995-03-28 Canon Kabushiki Kaisha Signal processor having avalanche photodiodes
US5272096A (en) * 1992-09-29 1993-12-21 Motorola, Inc. Method for making a bipolar transistor having a silicon carbide layer
US5646073A (en) * 1995-01-18 1997-07-08 Lsi Logic Corporation Process for selective deposition of polysilicon over single crystal silicon substrate and resulting product
US5604626A (en) * 1995-02-10 1997-02-18 Donnelly Corporation Photochromic devices

Also Published As

Publication number Publication date
AU5866100A (en) 2000-11-14
WO2000062331A9 (en) 2002-04-04
WO2000062331A2 (en) 2000-10-19

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