WO2000041456A3 - Optischer detektor mit einer filterschicht aus porösem silizium und herstellungsverfahren dazu - Google Patents

Optischer detektor mit einer filterschicht aus porösem silizium und herstellungsverfahren dazu Download PDF

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Publication number
WO2000041456A3
WO2000041456A3 PCT/DE1999/004096 DE9904096W WO0041456A3 WO 2000041456 A3 WO2000041456 A3 WO 2000041456A3 DE 9904096 W DE9904096 W DE 9904096W WO 0041456 A3 WO0041456 A3 WO 0041456A3
Authority
WO
WIPO (PCT)
Prior art keywords
filter layer
production
optical detector
layer made
porous silicon
Prior art date
Application number
PCT/DE1999/004096
Other languages
English (en)
French (fr)
Other versions
WO2000041456A9 (de
WO2000041456A2 (de
Inventor
Michel Marso
Ruediger Arens-Fischer
Dirk Hunkel
Original Assignee
Forschungszentrum Juelich Gmbh
Michel Marso
Arens Fischer Ruediger
Dirk Hunkel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich Gmbh, Michel Marso, Arens Fischer Ruediger, Dirk Hunkel filed Critical Forschungszentrum Juelich Gmbh
Priority to US09/889,134 priority Critical patent/US6689633B1/en
Priority to JP2000593082A priority patent/JP2003505856A/ja
Priority to EP99967910A priority patent/EP1151479A2/de
Priority to CA002355217A priority patent/CA2355217A1/en
Publication of WO2000041456A2 publication Critical patent/WO2000041456A2/de
Publication of WO2000041456A3 publication Critical patent/WO2000041456A3/de
Publication of WO2000041456A9 publication Critical patent/WO2000041456A9/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor

Abstract

Ein optischer Detektor auf Siliziumbasis mit einer porösen Filterschicht mit lateral veränderlicher Filterwirkung umfaßt eine Mehrzahl von Photoempfänger-Kontakten, die integriert ausgebildet sind und ein Verfahren zur Herstellung eines optisches Detektors durch Aufbringen einer Isolationsschicht auf die poröse Filterschicht unter Freihaltung aktiver Filterflächen.
PCT/DE1999/004096 1999-01-12 1999-12-24 Optischer detektor mit einer filterschicht aus porösem silizium und herstellungsverfahren dazu WO2000041456A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US09/889,134 US6689633B1 (en) 1999-01-12 1999-12-24 Optical detector with a filter layer made of porous silicon and method for the production thereof
JP2000593082A JP2003505856A (ja) 1999-01-12 1999-12-24 多孔性シリコン製のフィルタ層を備えた光学検出器及びその製造方法
EP99967910A EP1151479A2 (de) 1999-01-12 1999-12-24 Optischer detektor mit einer filterschicht aus porösem silizium und herstellungsverfahren dazu
CA002355217A CA2355217A1 (en) 1999-01-12 1999-12-24 Optical detector with a filter layer made of porous silicon and method for the production thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19900879.5 1999-01-12
DE19900879A DE19900879A1 (de) 1999-01-12 1999-01-12 Optischer Detektor mit einer Filterschicht aus porösem Silizium und Herstellungsverfahren dazu

Publications (3)

Publication Number Publication Date
WO2000041456A2 WO2000041456A2 (de) 2000-07-20
WO2000041456A3 true WO2000041456A3 (de) 2000-10-19
WO2000041456A9 WO2000041456A9 (de) 2001-09-27

Family

ID=7894042

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1999/004096 WO2000041456A2 (de) 1999-01-12 1999-12-24 Optischer detektor mit einer filterschicht aus porösem silizium und herstellungsverfahren dazu

Country Status (6)

Country Link
US (1) US6689633B1 (de)
EP (1) EP1151479A2 (de)
JP (1) JP2003505856A (de)
CA (1) CA2355217A1 (de)
DE (1) DE19900879A1 (de)
WO (1) WO2000041456A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10333669A1 (de) * 2003-07-24 2005-03-03 Forschungszentrum Jülich GmbH Photodetektor und Verfahren zu seiner Herstellung
KR101374932B1 (ko) 2007-09-28 2014-03-17 재단법인서울대학교산학협력재단 확산 제한 식각과정에 의한 수평 변환 다공성 실리콘 광학필터의 제조방법 및 그에 의한 필터구조
DE102010004890A1 (de) * 2010-01-18 2011-07-21 Siemens Aktiengesellschaft, 80333 Photodiodenarray, Strahlendetektor und Verfahren zur Herstellung eines solchen Photodiodenarrays und eines solchen Strahlendetektors

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995017017A1 (de) * 1993-12-15 1995-06-22 Forschungszentrum Jülich GmbH Verfahren zum elektrischen kontaktieren von porösem silizium
DE4444620C1 (de) * 1994-12-14 1996-01-25 Siemens Ag Sensor zum Nachweis elektromagnetischer Strahlung und Verfahren zu dessen Herstellung
WO1998028781A2 (de) * 1996-12-20 1998-07-02 Forschungszentrum Jülich GmbH Schicht mit porösem schichtbereich, eine solche schicht enthaltendes interferenzfilter sowie verfahren zu ihrer herstellung
WO1999021033A2 (de) * 1997-10-20 1999-04-29 Forschungszentrum Jülich GmbH Eine filterstruktur aufweisendes bauelement

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043571A (en) * 1988-08-01 1991-08-27 Minolta Camera Kabushiki Kaisha CCD photosensor and its application to a spectrophotometer
GB9213824D0 (en) * 1992-06-30 1992-08-12 Isis Innovation Light emitting devices
DE4319413C2 (de) 1993-06-14 1999-06-10 Forschungszentrum Juelich Gmbh Interferenzfilter oder dielektrischer Spiegel
EP0645621A3 (de) * 1993-09-28 1995-11-08 Siemens Ag Sensoranordnung.
DE19608428C2 (de) * 1996-03-05 2000-10-19 Forschungszentrum Juelich Gmbh Chemischer Sensor
DE19609073A1 (de) 1996-03-08 1997-09-11 Forschungszentrum Juelich Gmbh Farbselektives Si-Detektorarray
US5939732A (en) * 1997-05-22 1999-08-17 Kulite Semiconductor Products, Inc. Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof
US6350623B1 (en) * 1999-10-29 2002-02-26 California Institute Of Technology Method of forming intermediate structures in porous substrates in which electrical and optical microdevices are fabricated and intermediate structures formed by the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995017017A1 (de) * 1993-12-15 1995-06-22 Forschungszentrum Jülich GmbH Verfahren zum elektrischen kontaktieren von porösem silizium
DE4444620C1 (de) * 1994-12-14 1996-01-25 Siemens Ag Sensor zum Nachweis elektromagnetischer Strahlung und Verfahren zu dessen Herstellung
WO1998028781A2 (de) * 1996-12-20 1998-07-02 Forschungszentrum Jülich GmbH Schicht mit porösem schichtbereich, eine solche schicht enthaltendes interferenzfilter sowie verfahren zu ihrer herstellung
WO1999021033A2 (de) * 1997-10-20 1999-04-29 Forschungszentrum Jülich GmbH Eine filterstruktur aufweisendes bauelement

Also Published As

Publication number Publication date
WO2000041456A9 (de) 2001-09-27
EP1151479A2 (de) 2001-11-07
DE19900879A1 (de) 2000-08-17
WO2000041456A2 (de) 2000-07-20
JP2003505856A (ja) 2003-02-12
US6689633B1 (en) 2004-02-10
CA2355217A1 (en) 2000-07-20

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