WO2000035603A1 - Plasma enhanced chemical deposition for high and/or low index of refraction polymers - Google Patents
Plasma enhanced chemical deposition for high and/or low index of refraction polymers Download PDFInfo
- Publication number
- WO2000035603A1 WO2000035603A1 PCT/US1999/030070 US9930070W WO0035603A1 WO 2000035603 A1 WO2000035603 A1 WO 2000035603A1 US 9930070 W US9930070 W US 9930070W WO 0035603 A1 WO0035603 A1 WO 0035603A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- monomer
- glow discharge
- recited
- evaporate
- plasma
- Prior art date
Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 23
- 238000005234 chemical deposition Methods 0.000 title description 3
- 239000000178 monomer Substances 0.000 claims abstract description 88
- 238000000034 method Methods 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 28
- 238000001704 evaporation Methods 0.000 claims abstract description 25
- 238000004132 cross linking Methods 0.000 claims abstract description 12
- 239000002245 particle Substances 0.000 claims description 32
- 239000007789 gas Substances 0.000 claims description 30
- 239000007788 liquid Substances 0.000 claims description 30
- 230000008020 evaporation Effects 0.000 claims description 19
- UEXCJVNBTNXOEH-UHFFFAOYSA-N Ethynylbenzene Chemical group C#CC1=CC=CC=C1 UEXCJVNBTNXOEH-UHFFFAOYSA-N 0.000 claims description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 7
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 6
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 4
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 claims description 4
- ZODWTWYKYYGSFS-UHFFFAOYSA-N diphenyl-bis(prop-2-enyl)silane Chemical compound C=1C=CC=CC=1[Si](CC=C)(CC=C)C1=CC=CC=C1 ZODWTWYKYYGSFS-UHFFFAOYSA-N 0.000 claims description 4
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 235000010290 biphenyl Nutrition 0.000 claims 2
- 239000004305 biphenyl Substances 0.000 claims 2
- 239000012495 reaction gas Substances 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 238000001723 curing Methods 0.000 description 15
- 239000000126 substance Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 150000003254 radicals Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 4
- 229910052794 bromium Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000002484 inorganic compounds Chemical group 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 241000894007 species Species 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000003847 radiation curing Methods 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000719193 Seriola rivoliana Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- FSIJKGMIQTVTNP-UHFFFAOYSA-N bis(ethenyl)-methyl-trimethylsilyloxysilane Chemical compound C[Si](C)(C)O[Si](C)(C=C)C=C FSIJKGMIQTVTNP-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- WCYWZMWISLQXQU-UHFFFAOYSA-N methyl Chemical compound [CH3] WCYWZMWISLQXQU-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99966363A EP1144132A1 (en) | 1998-12-16 | 1999-12-15 | Plasma enhanced chemical deposition for high and/or low index of refraction polymers |
KR1020017007523A KR20010093841A (en) | 1998-12-16 | 1999-12-15 | Plasma enhanced chemical deposition for high and/or low index of refraction polymers |
JP2000587903A JP2002532621A (en) | 1998-12-16 | 1999-12-15 | Plasma enhanced chemical deposition for high and / or low index polymers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/212,776 | 1998-12-16 | ||
US09/212,776 US6207238B1 (en) | 1998-12-16 | 1998-12-16 | Plasma enhanced chemical deposition for high and/or low index of refraction polymers |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000035603A1 true WO2000035603A1 (en) | 2000-06-22 |
Family
ID=22792378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/030070 WO2000035603A1 (en) | 1998-12-16 | 1999-12-15 | Plasma enhanced chemical deposition for high and/or low index of refraction polymers |
Country Status (6)
Country | Link |
---|---|
US (2) | US6207238B1 (en) |
EP (1) | EP1144132A1 (en) |
JP (1) | JP2002532621A (en) |
KR (1) | KR20010093841A (en) |
TW (1) | TW458811B (en) |
WO (1) | WO2000035603A1 (en) |
Cited By (12)
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US6497924B2 (en) * | 1998-12-16 | 2002-12-24 | Battelle Memorial Institute | Method of making non-linear optical polymer |
WO2003094213A1 (en) | 2002-04-30 | 2003-11-13 | Brewer Science, Inc. | Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition |
EP1397260A1 (en) * | 2001-02-02 | 2004-03-17 | Brewer Science, Inc. | Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition |
US8088502B2 (en) | 2006-09-20 | 2012-01-03 | Battelle Memorial Institute | Nanostructured thin film optical coatings |
US8900366B2 (en) | 2002-04-15 | 2014-12-02 | Samsung Display Co., Ltd. | Apparatus for depositing a multilayer coating on discrete sheets |
US8904819B2 (en) | 2009-12-31 | 2014-12-09 | Samsung Display Co., Ltd. | Evaporator with internal restriction |
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US6207238B1 (en) * | 1998-12-16 | 2001-03-27 | Battelle Memorial Institute | Plasma enhanced chemical deposition for high and/or low index of refraction polymers |
US6623861B2 (en) * | 2001-04-16 | 2003-09-23 | Battelle Memorial Institute | Multilayer plastic substrates |
US20070196682A1 (en) * | 1999-10-25 | 2007-08-23 | Visser Robert J | Three dimensional multilayer barrier and method of making |
US7198832B2 (en) * | 1999-10-25 | 2007-04-03 | Vitex Systems, Inc. | Method for edge sealing barrier films |
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JP4513956B2 (en) * | 2003-07-30 | 2010-07-28 | 日本電気株式会社 | Organic polymer film and method for producing the same |
US20050255410A1 (en) * | 2004-04-29 | 2005-11-17 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
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US20070022911A1 (en) * | 2005-08-01 | 2007-02-01 | C.L. Industries, Inc. | Method of manufacturing luminescent tiles and products made therefrom |
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US8084102B2 (en) * | 2007-02-06 | 2011-12-27 | Sion Power Corporation | Methods for co-flash evaporation of polymerizable monomers and non-polymerizable carrier solvent/salt mixtures/solutions |
US20080276860A1 (en) * | 2007-05-10 | 2008-11-13 | Burrows Brian H | Cross flow apparatus and method for hydride vapor phase deposition |
US20080289575A1 (en) * | 2007-05-24 | 2008-11-27 | Burrows Brian H | Methods and apparatus for depositing a group iii-v film using a hydride vapor phase epitaxy process |
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US8133659B2 (en) * | 2008-01-29 | 2012-03-13 | Brewer Science Inc. | On-track process for patterning hardmask by multiple dark field exposures |
US20100167002A1 (en) * | 2008-12-30 | 2010-07-01 | Vitex Systems, Inc. | Method for encapsulating environmentally sensitive devices |
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Also Published As
Publication number | Publication date |
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US6207238B1 (en) | 2001-03-27 |
KR20010093841A (en) | 2001-10-29 |
EP1144132A1 (en) | 2001-10-17 |
JP2002532621A (en) | 2002-10-02 |
US6858259B2 (en) | 2005-02-22 |
US20040009306A1 (en) | 2004-01-15 |
TW458811B (en) | 2001-10-11 |
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