WO2000030159A1 - Method to decrease dishing rate during cmp in metal semiconductor structures - Google Patents
Method to decrease dishing rate during cmp in metal semiconductor structures Download PDFInfo
- Publication number
- WO2000030159A1 WO2000030159A1 PCT/US1999/027225 US9927225W WO0030159A1 WO 2000030159 A1 WO2000030159 A1 WO 2000030159A1 US 9927225 W US9927225 W US 9927225W WO 0030159 A1 WO0030159 A1 WO 0030159A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- microns
- roughness less
- polishing
- root
- polishing pad
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020017006256A KR20010093086A (en) | 1998-11-18 | 1999-11-17 | Method to decrease dishing rate during CMP in metal semiconductor structures |
JP2000583074A JP2002530861A (en) | 1998-11-18 | 1999-11-17 | Method for reducing dishing speed during CMP in metal semiconductor structure |
EP99957571A EP1147546A1 (en) | 1998-11-18 | 1999-11-17 | Method to decrease dishing rate during cmp in metal semiconductor structures |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10893698P | 1998-11-18 | 1998-11-18 | |
US60/108,936 | 1998-11-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000030159A1 true WO2000030159A1 (en) | 2000-05-25 |
Family
ID=22324909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/027225 WO2000030159A1 (en) | 1998-11-18 | 1999-11-17 | Method to decrease dishing rate during cmp in metal semiconductor structures |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1147546A1 (en) |
JP (1) | JP2002530861A (en) |
KR (1) | KR20010093086A (en) |
WO (1) | WO2000030159A1 (en) |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6432826B1 (en) | 1999-11-29 | 2002-08-13 | Applied Materials, Inc. | Planarized Cu cleaning for reduced defects |
US6451697B1 (en) | 2000-04-06 | 2002-09-17 | Applied Materials, Inc. | Method for abrasive-free metal CMP in passivation domain |
US6524167B1 (en) | 2000-10-27 | 2003-02-25 | Applied Materials, Inc. | Method and composition for the selective removal of residual materials and barrier materials during substrate planarization |
US6569349B1 (en) | 2000-10-23 | 2003-05-27 | Applied Materials Inc. | Additives to CMP slurry to polish dielectric films |
US6592742B2 (en) | 2001-07-13 | 2003-07-15 | Applied Materials Inc. | Electrochemically assisted chemical polish |
US6638143B2 (en) | 1999-12-22 | 2003-10-28 | Applied Materials, Inc. | Ion exchange materials for chemical mechanical polishing |
US6653242B1 (en) | 2000-06-30 | 2003-11-25 | Applied Materials, Inc. | Solution to metal re-deposition during substrate planarization |
US6677239B2 (en) | 2001-08-24 | 2004-01-13 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing |
US6743737B2 (en) | 1998-11-04 | 2004-06-01 | Applied Materials, Inc. | Method of improving moisture resistance of low dielectric constant films |
US6811470B2 (en) | 2001-07-16 | 2004-11-02 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing shallow trench isolation substrates |
US6821881B2 (en) | 2001-07-25 | 2004-11-23 | Applied Materials, Inc. | Method for chemical mechanical polishing of semiconductor substrates |
EP1502703A1 (en) * | 2003-07-30 | 2005-02-02 | Rohm and Haas Electronic Materials CMP Holdings, Inc. | Porous polyurethane polishing pads |
US6858540B2 (en) | 2000-05-11 | 2005-02-22 | Applied Materials, Inc. | Selective removal of tantalum-containing barrier layer during metal CMP |
US6899612B2 (en) | 2003-02-25 | 2005-05-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad apparatus and methods |
US7008554B2 (en) | 2001-07-13 | 2006-03-07 | Applied Materials, Inc. | Dual reduced agents for barrier removal in chemical mechanical polishing |
US7012025B2 (en) | 2001-01-05 | 2006-03-14 | Applied Materials Inc. | Tantalum removal during chemical mechanical polishing |
US7022608B2 (en) | 2000-12-01 | 2006-04-04 | Applied Materials Inc. | Method and composition for the removal of residual materials during substrate planarization |
US7037174B2 (en) | 2002-10-03 | 2006-05-02 | Applied Materials, Inc. | Methods for reducing delamination during chemical mechanical polishing |
US7063597B2 (en) | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
US7104869B2 (en) | 2001-07-13 | 2006-09-12 | Applied Materials, Inc. | Barrier removal at low polish pressure |
US7199056B2 (en) | 2002-02-08 | 2007-04-03 | Applied Materials, Inc. | Low cost and low dishing slurry for polysilicon CMP |
US7210988B2 (en) | 2004-08-24 | 2007-05-01 | Applied Materials, Inc. | Method and apparatus for reduced wear polishing pad conditioning |
US7220322B1 (en) | 2000-08-24 | 2007-05-22 | Applied Materials, Inc. | Cu CMP polishing pad cleaning |
US7504018B2 (en) | 2005-10-31 | 2009-03-17 | Applied Materials, Inc. | Electrochemical method for Ecmp polishing pad conditioning |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5096854A (en) * | 1988-06-28 | 1992-03-17 | Japan Silicon Co., Ltd. | Method for polishing a silicon wafer using a ceramic polishing surface having a maximum surface roughness less than 0.02 microns |
US5628862A (en) * | 1993-12-16 | 1997-05-13 | Motorola, Inc. | Polishing pad for chemical-mechanical polishing of a semiconductor substrate |
US5676587A (en) * | 1995-12-06 | 1997-10-14 | International Business Machines Corporation | Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride |
US5913712A (en) * | 1995-08-09 | 1999-06-22 | Cypress Semiconductor Corp. | Scratch reduction in semiconductor circuit fabrication using chemical-mechanical polishing |
US5916011A (en) * | 1996-12-26 | 1999-06-29 | Motorola, Inc. | Process for polishing a semiconductor device substrate |
US5932486A (en) * | 1996-08-16 | 1999-08-03 | Rodel, Inc. | Apparatus and methods for recirculating chemical-mechanical polishing of semiconductor wafers |
-
1999
- 1999-11-17 JP JP2000583074A patent/JP2002530861A/en active Pending
- 1999-11-17 EP EP99957571A patent/EP1147546A1/en not_active Withdrawn
- 1999-11-17 KR KR1020017006256A patent/KR20010093086A/en not_active Application Discontinuation
- 1999-11-17 WO PCT/US1999/027225 patent/WO2000030159A1/en not_active Application Discontinuation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5096854A (en) * | 1988-06-28 | 1992-03-17 | Japan Silicon Co., Ltd. | Method for polishing a silicon wafer using a ceramic polishing surface having a maximum surface roughness less than 0.02 microns |
US5628862A (en) * | 1993-12-16 | 1997-05-13 | Motorola, Inc. | Polishing pad for chemical-mechanical polishing of a semiconductor substrate |
US5913712A (en) * | 1995-08-09 | 1999-06-22 | Cypress Semiconductor Corp. | Scratch reduction in semiconductor circuit fabrication using chemical-mechanical polishing |
US5676587A (en) * | 1995-12-06 | 1997-10-14 | International Business Machines Corporation | Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride |
US5932486A (en) * | 1996-08-16 | 1999-08-03 | Rodel, Inc. | Apparatus and methods for recirculating chemical-mechanical polishing of semiconductor wafers |
US5916011A (en) * | 1996-12-26 | 1999-06-29 | Motorola, Inc. | Process for polishing a semiconductor device substrate |
Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6743737B2 (en) | 1998-11-04 | 2004-06-01 | Applied Materials, Inc. | Method of improving moisture resistance of low dielectric constant films |
US6432826B1 (en) | 1999-11-29 | 2002-08-13 | Applied Materials, Inc. | Planarized Cu cleaning for reduced defects |
US7104267B2 (en) | 1999-11-29 | 2006-09-12 | Applied Materials Inc. | Planarized copper cleaning for reduced defects |
US6638143B2 (en) | 1999-12-22 | 2003-10-28 | Applied Materials, Inc. | Ion exchange materials for chemical mechanical polishing |
US6451697B1 (en) | 2000-04-06 | 2002-09-17 | Applied Materials, Inc. | Method for abrasive-free metal CMP in passivation domain |
US6858540B2 (en) | 2000-05-11 | 2005-02-22 | Applied Materials, Inc. | Selective removal of tantalum-containing barrier layer during metal CMP |
US6653242B1 (en) | 2000-06-30 | 2003-11-25 | Applied Materials, Inc. | Solution to metal re-deposition during substrate planarization |
US7220322B1 (en) | 2000-08-24 | 2007-05-22 | Applied Materials, Inc. | Cu CMP polishing pad cleaning |
US6569349B1 (en) | 2000-10-23 | 2003-05-27 | Applied Materials Inc. | Additives to CMP slurry to polish dielectric films |
US6524167B1 (en) | 2000-10-27 | 2003-02-25 | Applied Materials, Inc. | Method and composition for the selective removal of residual materials and barrier materials during substrate planarization |
US7022608B2 (en) | 2000-12-01 | 2006-04-04 | Applied Materials Inc. | Method and composition for the removal of residual materials during substrate planarization |
US7012025B2 (en) | 2001-01-05 | 2006-03-14 | Applied Materials Inc. | Tantalum removal during chemical mechanical polishing |
US6592742B2 (en) | 2001-07-13 | 2003-07-15 | Applied Materials Inc. | Electrochemically assisted chemical polish |
US7008554B2 (en) | 2001-07-13 | 2006-03-07 | Applied Materials, Inc. | Dual reduced agents for barrier removal in chemical mechanical polishing |
US7104869B2 (en) | 2001-07-13 | 2006-09-12 | Applied Materials, Inc. | Barrier removal at low polish pressure |
US6811470B2 (en) | 2001-07-16 | 2004-11-02 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing shallow trench isolation substrates |
US6821881B2 (en) | 2001-07-25 | 2004-11-23 | Applied Materials, Inc. | Method for chemical mechanical polishing of semiconductor substrates |
US7060606B2 (en) | 2001-07-25 | 2006-06-13 | Applied Materials Inc. | Method and apparatus for chemical mechanical polishing of semiconductor substrates |
US6677239B2 (en) | 2001-08-24 | 2004-01-13 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing |
US7199056B2 (en) | 2002-02-08 | 2007-04-03 | Applied Materials, Inc. | Low cost and low dishing slurry for polysilicon CMP |
US7037174B2 (en) | 2002-10-03 | 2006-05-02 | Applied Materials, Inc. | Methods for reducing delamination during chemical mechanical polishing |
US7244168B2 (en) | 2002-10-03 | 2007-07-17 | Applied Materials, Inc. | Methods for reducing delamination during chemical mechanical polishing |
US7063597B2 (en) | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
US6899612B2 (en) | 2003-02-25 | 2005-05-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad apparatus and methods |
EP1502703A1 (en) * | 2003-07-30 | 2005-02-02 | Rohm and Haas Electronic Materials CMP Holdings, Inc. | Porous polyurethane polishing pads |
US7210988B2 (en) | 2004-08-24 | 2007-05-01 | Applied Materials, Inc. | Method and apparatus for reduced wear polishing pad conditioning |
US7504018B2 (en) | 2005-10-31 | 2009-03-17 | Applied Materials, Inc. | Electrochemical method for Ecmp polishing pad conditioning |
Also Published As
Publication number | Publication date |
---|---|
EP1147546A1 (en) | 2001-10-24 |
KR20010093086A (en) | 2001-10-27 |
JP2002530861A (en) | 2002-09-17 |
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