WO1999005712A1 - Process for fabricating layered superlattice materials and abo3, type metal oxides and making electronic devices including same without exposure to oxygen - Google Patents
Process for fabricating layered superlattice materials and abo3, type metal oxides and making electronic devices including same without exposure to oxygen Download PDFInfo
- Publication number
- WO1999005712A1 WO1999005712A1 PCT/US1998/014398 US9814398W WO9905712A1 WO 1999005712 A1 WO1999005712 A1 WO 1999005712A1 US 9814398 W US9814398 W US 9814398W WO 9905712 A1 WO9905712 A1 WO 9905712A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- temperature
- oxygen
- precursor
- substrate
- layered superlattice
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1225—Deposition of multilayers of inorganic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1275—Process of deposition of the inorganic material performed under inert atmosphere
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP98934436A EP1018151B1 (en) | 1997-07-25 | 1998-07-17 | Process for fabricating layered superlattice materials and making electronic devices including same without exposure to oxygen |
DE69826015T DE69826015T2 (en) | 1997-07-25 | 1998-07-17 | PREPARATION OF LAYERED SUPERLATTICE MATERIALS EXCLUDING OXYGEN |
JP2000504599A JP2001511600A (en) | 1997-07-25 | 1998-07-17 | Process for producing a layered superlattice material and fabricating an electronic device containing the layered superlattice material without exposure to oxygen |
KR10-2000-7000846A KR100516630B1 (en) | 1997-07-25 | 1998-07-17 | Process for fabricating layered superlattice materials and abo3, type metal oxides and making electrionic devices including same without exposure to oxygen |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/900,270 | 1997-07-25 | ||
US08/900,270 US5962069A (en) | 1997-07-25 | 1997-07-25 | Process for fabricating layered superlattice materials and AB03 type metal oxides without exposure to oxygen at high temperatures |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999005712A1 true WO1999005712A1 (en) | 1999-02-04 |
Family
ID=25412263
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1998/014398 WO1999005712A1 (en) | 1997-07-25 | 1998-07-17 | Process for fabricating layered superlattice materials and abo3, type metal oxides and making electronic devices including same without exposure to oxygen |
Country Status (8)
Country | Link |
---|---|
US (1) | US5962069A (en) |
EP (1) | EP1018151B1 (en) |
JP (1) | JP2001511600A (en) |
KR (1) | KR100516630B1 (en) |
CN (1) | CN1174473C (en) |
DE (1) | DE69826015T2 (en) |
TW (1) | TW396597B (en) |
WO (1) | WO1999005712A1 (en) |
Cited By (3)
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---|---|---|---|---|
EP1708290A2 (en) * | 2005-03-31 | 2006-10-04 | Seiko Epson Corporation | Method for producing dielectric film, method for producing piezoelectric element, method for producing liquid-jet head, dielectric film, piezoelectric element, and liquid-jet apparatus |
US8520219B2 (en) | 2011-12-19 | 2013-08-27 | Perceptron, Inc. | Non-contact sensor having improved laser spot |
CN105934282A (en) * | 2014-03-25 | 2016-09-07 | 三菱综合材料株式会社 | Method for forming LaNiO3 thin film |
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JPH11220095A (en) * | 1998-01-30 | 1999-08-10 | Sony Corp | Manufacture of dielectric capacitor |
US6312816B1 (en) * | 1998-02-20 | 2001-11-06 | Advanced Technology Materials, Inc. | A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators |
KR100329733B1 (en) * | 1998-10-09 | 2002-05-09 | 박종섭 | Method for forming capacitor of semiconductor device |
US6245580B1 (en) * | 1999-01-11 | 2001-06-12 | Symetrix Corporation | Low temperature process for fabricating layered superlattice materials and making electronic devices including same |
US6093661A (en) * | 1999-08-30 | 2000-07-25 | Micron Technology, Inc. | Integrated circuitry and semiconductor processing method of forming field effect transistors |
US6207584B1 (en) * | 2000-01-05 | 2001-03-27 | International Business Machines Corp. | High dielectric constant material deposition to achieve high capacitance |
US6372518B1 (en) | 2000-01-26 | 2002-04-16 | Matsushita Electric Industrial Co., Ltd. | Method using unreactive gas anneal and low temperature pretreatment for fabricating layered superlattice materials and making electronic devices including same |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
US6326315B1 (en) * | 2000-03-09 | 2001-12-04 | Symetrix Corporation | Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same |
US6590236B1 (en) | 2000-07-24 | 2003-07-08 | Motorola, Inc. | Semiconductor structure for use with high-frequency signals |
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US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
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US6743643B2 (en) * | 2001-11-29 | 2004-06-01 | Symetrix Corporation | Stacked memory cell having diffusion barriers |
US6815223B2 (en) | 2002-11-22 | 2004-11-09 | Symetrix Corporation | Low thermal budget fabrication of ferroelectric memory using RTP |
WO2005065402A2 (en) * | 2003-12-29 | 2005-07-21 | Translucent Photonics, Inc. | Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
US7384481B2 (en) * | 2003-12-29 | 2008-06-10 | Translucent Photonics, Inc. | Method of forming a rare-earth dielectric layer |
US20060169592A1 (en) * | 2005-01-31 | 2006-08-03 | Hewlett-Packard Development Company, L.P. | Periodic layered structures and methods therefor |
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KR101093566B1 (en) | 2010-03-31 | 2011-12-13 | 성균관대학교산학협력단 | Manufacturing method of multi-component oxide thin film having superlattice structure |
CN106058039B (en) * | 2016-07-15 | 2018-12-21 | 中国科学院金属研究所 | A kind of lead zirconate titanate/ruthenic acid strontium ferroelectric superlattice material and preparation method thereof |
CN110002508B (en) * | 2019-04-02 | 2023-03-21 | 佛山市格瑞芬新能源有限公司 | Preparation method of self-supporting few-layer inorganic nanoparticle superlattice |
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-
1997
- 1997-07-25 US US08/900,270 patent/US5962069A/en not_active Expired - Lifetime
-
1998
- 1998-07-17 EP EP98934436A patent/EP1018151B1/en not_active Expired - Lifetime
- 1998-07-17 WO PCT/US1998/014398 patent/WO1999005712A1/en active IP Right Grant
- 1998-07-17 JP JP2000504599A patent/JP2001511600A/en active Pending
- 1998-07-17 KR KR10-2000-7000846A patent/KR100516630B1/en not_active IP Right Cessation
- 1998-07-17 CN CNB988075822A patent/CN1174473C/en not_active Expired - Fee Related
- 1998-07-17 DE DE69826015T patent/DE69826015T2/en not_active Expired - Lifetime
- 1998-07-22 TW TW087111939A patent/TW396597B/en not_active IP Right Cessation
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1708290A2 (en) * | 2005-03-31 | 2006-10-04 | Seiko Epson Corporation | Method for producing dielectric film, method for producing piezoelectric element, method for producing liquid-jet head, dielectric film, piezoelectric element, and liquid-jet apparatus |
EP1708290A3 (en) * | 2005-03-31 | 2007-01-31 | Seiko Epson Corporation | Method for producing dielectric film, method for producing piezoelectric element, method for producing liquid-jet head, dielectric film, piezoelectric element, and liquid-jet apparatus |
KR100859911B1 (en) * | 2005-03-31 | 2008-09-23 | 세이코 엡슨 가부시키가이샤 | Method for producing dielectric film, method for producing piezoelectric element, method for producing liquid-jet head, dielectric film, piezoelectric element, and liquid-jet apparatus |
US7819508B2 (en) | 2005-03-31 | 2010-10-26 | Seiko Epson Corporation | Dielectric film and piezoelectric element |
US8520219B2 (en) | 2011-12-19 | 2013-08-27 | Perceptron, Inc. | Non-contact sensor having improved laser spot |
CN105934282A (en) * | 2014-03-25 | 2016-09-07 | 三菱综合材料株式会社 | Method for forming LaNiO3 thin film |
Also Published As
Publication number | Publication date |
---|---|
EP1018151B1 (en) | 2004-09-01 |
CN1174473C (en) | 2004-11-03 |
DE69826015D1 (en) | 2004-10-07 |
EP1018151A1 (en) | 2000-07-12 |
TW396597B (en) | 2000-07-01 |
KR20010022272A (en) | 2001-03-15 |
JP2001511600A (en) | 2001-08-14 |
KR100516630B1 (en) | 2005-09-22 |
DE69826015T2 (en) | 2005-09-15 |
US5962069A (en) | 1999-10-05 |
CN1265224A (en) | 2000-08-30 |
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