WO1998041670A1 - Internally heated pyrolysis zone and a method wherein use is made of this zone - Google Patents

Internally heated pyrolysis zone and a method wherein use is made of this zone Download PDF

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Publication number
WO1998041670A1
WO1998041670A1 PCT/US1998/003657 US9803657W WO9841670A1 WO 1998041670 A1 WO1998041670 A1 WO 1998041670A1 US 9803657 W US9803657 W US 9803657W WO 9841670 A1 WO9841670 A1 WO 9841670A1
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Prior art keywords
tube
zone
gas
heating element
centerline
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PCT/US1998/003657
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French (fr)
Inventor
John Wary
William F. Beach
Roger A. Olson
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Specialty Coating Systems, Inc.
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Priority to AU61855/98A priority Critical patent/AU6185598A/en
Publication of WO1998041670A1 publication Critical patent/WO1998041670A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

Definitions

  • the present invention relates generally to an internally heated pyrolysis zone, and more specifically to such an apparatus that can be used in the vacuum deposition of parylene monomer.
  • Conformal coatings having low dielectric constants and high melting temperatures are desirable for many applications, including the medical, electronics and automotive industries.
  • Parylene polymers are poly-p-xylylenes which may be prepared with a parylene dimer. Parylene polymers generally have a structure:
  • parylene dimers wherein X is typically a hydrogen atom or a halogen atom.
  • parylene dimers include the following:
  • parylene polymer layers are formed by a vapor deposition method that is performed using a vacuum apparatus 10 as shown in Fig. 1, such as disclosed in U.S. Patent No. 5,538,758 which is herein incorporated by reference.
  • Apparatus 10 includes a vaporization zone 12, a pyrolysis zone 14, a post-pyrolysis zone 16 and a deposition chamber 18.
  • the parylene dimer is vaporized in vaporization zone 12 and the dimer bond is then cleaved by pyrolysis in pyrolysis zone 14 to form parylene monomer having the structure:
  • the parylene monomer passes through post-pyrolysis zone 16 which removes a substantial amount of undesired chemical species.
  • the parylene monomer is then deposited onto the surface of a substrate 19 disposed within deposition chamber 18. Polymerization of the deposited parylene monomer occurs spontaneously to form the parylene polymer layer coating on the surface of substrate 19.
  • Fig. 2 shows a pyrolysis zone 14 which includes a tube 20 with one or more electric tube heaters 22 disposed along the outer surface 24 of wall 26 of tube 20.
  • Heaters 22 increase the temperature of tube 20 to heat the parylene dimer disposed within the interior of tube 20, resulting in cleavage of the parylene dimer bond and formation of the parylene monomer. Due to the arrangement of heaters 22, parylene dimer disposed adjacent the inner surface 28 of wall 26 of tube 20 is maintained at a higher temperature than parylene dimer disposed adjacent the centerline 29 of tube 20.
  • tube 20 may not be effective in heating the parylene dimer flowing adjacent centerline 29 to a temperature high enough to pyrolyze the parylene dimer and form parylene monomer.
  • overpyrolysis of parylene dimer adjacent inner surface 28 can occur, causing a carbonaceous residue to build up on surface 28.
  • greater than about 1 weight percent of the vaporized parylene dimer results in carbonaceous buildup on inner surface 28.
  • the present invention provides a deposition apparatus that comprises a deposition chamber, a tube and a heating element.
  • the tube is in fluid communication with the deposition chamber, and the heating element is constructed and arranged so that the heating element preferentially heats the centerline of the tube relative to the inner surface of the tube.
  • the present invention provides an apparatus for depositing a gas that comprises a deposition chamber, a tube and means for preferentially heating the centerline of the tube relative to the inner surface of the tube.
  • the tube is in fluid communication with the deposition chamber.
  • the present invention provides an apparatus for depositing parylene monomer.
  • the apparatus comprises a first zone for providing parylene dimer, a pyrolysis zone, a heating element and a deposition chamber.
  • the pyrolysis zone is designed to pyrolyze the parylene dimer to form the parylene monomer.
  • the pyrolysis zone comprises a tube and a heating element.
  • the tube is in fluid communication with the first zone and the deposition chamber.
  • the heating element is constructed and arranged so that the heating element preferentially heats the centerline of the tube relative to the inner surface of the tube.
  • the present invention provides an apparatus for depositing parylene monomer.
  • the apparatus comprises a first zone for providing parylene dimer, a pyrolysis zone and a deposition chamber.
  • the pyrolysis zone is designed to pyrolyze the parylene dimer to form parylene monomer.
  • the pyrolysis zone comprises a tube and means for preferentially heating the centerline of the tube relative to the inner surface of the tube.
  • the tube is in fluid communication with the first zone and the deposition chamber.
  • the present invention provides a method of depositing a product gas onto a surface.
  • the method comprises placing a first gas into a tube; heating first and second portions of the first gas to first and second temperatures, respectively, to form the product gas, the first portion of the first gas being adjacent the centerline of the tube, the second portion of the first gas being adjacent the inner surface of the tube, the first temperature being greater than the second temperature; and depositing the product gas onto the surface.
  • FIG. 1 is a cross-sectional view of a deposition apparatus according to the related art
  • Fig. 2 is a cross-sectional view of a pyrolysis zone according to the related art
  • Fig. 3 is a cross-sectional view of a deposition apparatus according to one embodiment the present invention.
  • Fig. 4 is a cross-sectional view of a pyrolysis zone according to one embodiment of the present invention.
  • Fig. 3 shows one embodiment of a deposition apparatus 20 which includes a vaporization zone 12, a pyrolysis zone 40, a post-pyrolysis zone 16 and a deposition chamber 18.
  • Pyrolysis zone 40 (Fig. 4) includes a tube 42, a heating element 44 disposed substantially along centerline
  • tube 48 and a power supply 50 in electrical communication with element 44 via electrical connectors 51 and 53.
  • Tube 42 is designed to be in fluid communication with vaporization zone 12 and post- pyrolysis zone 16 such that vaporized dimer can exit zone 12, be pyrolyzed to parylene monomer within tube 42 and pass to post-pyrolysis zone 16. Since pyrolysis occurs at temperatures of about 1000°C or less, inner surface 52 of wall 54 of tube 42 should be chemically inert to parylene dimer and parylene monomer within this temperature range.
  • materials appropriate for use as wall 54 of tube 42 include, but are not limited to, quartz, stainless steel with a quartz inner surface, inconel with a quartz inner surface, monel with a quartz inner surface. Alternatively, the quartz may be partially or entirely replaced with certain ceramics, such as aluminum oxide, or beryllium oxide. Other such materials are known to those skilled in the art and are intended to be within the scope of the present invention.
  • Tube 42 may have any dimensions that allow tube 42 to be used according to the Gorham process, such as described in U.S. Patent No. 5,538,758. Typically, tube 42 is from about three feet to about four feet long with a diameter of from about 32 millimeters to about 50 millimeters.
  • Heating element 44 is designed to heat parylene dimer disposed within tube 42 to form parylene monomer.
  • Element 44 may be heated using ohmic heating produced by applying a potential across element 44 using power supply 50. Therefore, element 44 should be formed from a material which is chemically inert to parylene dimer and parylene monomer at temperature of about 1000°C or less.
  • An illustrative and nonlimiting list of such materials includes nichrome, platinum, platinum-iridium alloys, tungsten and other such materials which are known to those skilled in the art.
  • element 44 may be in the shape of a coil with varying diameter.
  • the largest diameter portions of element 44 should have a diameter that is about the same as the inner diameter of tube 44 such that the largest diameter portions of element 44 provide mechanical support for element 44 within tube 42.
  • element 44 may be have a substantially constant diameter along its entire length within tube 42.
  • mechanical support for element 44 may be provided by, for example, ceramic spacers, or perforated washers. While certain types of mechanical supports have been disclosed herein, it is to be understood that other supports may also be used so long as they are capable of supporting element 44 in its preferred position. It should be noted that such mechanical supports should not substantially reduce the throughput or flow rate of gas through tube 42.
  • Element 44 is limited only in that it should be capable of preferentially heating a gas disposed along centerline 46 relative to inner surface 52 of tube 42 without substantially reducing the throughput or flow rate of gas through tube 42. Accordingly, in some embodiments, element 44 may be in the form of a mesh, a ribbon wire, a rounded wire, a rod with heat conducting fins or other such arrangements as will be apparent to those skilled in the art.
  • parylene deposition may be carried out without substantial carbonaceous buildup on inner surface 52 of pyrolysis tube 42.
  • less than about 1 weight percent of the vaporized parylene dimer forms carbonaceous material on inner surface 52, more preferably less than about 0.5 weight percent, and most preferably less than about 0.1 weight percent.
  • pyrolysis tube 42 may include one or more components formed of pyrex, quartz or similar materials that are bent and disposed within the interior of tube 42 such that a gas flowing through tube 42 can follow a tortuous path. Such devices, often referred to as static mixers, are known to those skilled in the art.
  • heating element 44 may also be disposed within the interior of tube 42 as described herein.
  • tube 48 should be in fluid communication with both vaporization zone 12 and deposition zone 18.
  • tube 48 may include heating element 44 within the interior of tube 48 and one or more heaters 22 disposed along the outer surface of wall 54.

Abstract

A method and apparatus for more efficiently depositing a gas onto a surface. In one embodiment, a deposition apparatus is provided. The deposition apparatus comprises a deposition chamber, a tube and a heating element. The tube is in fluid communication with the deposition chamber, and the heating element is constructed and arranged so that the heating element preferentially heats the centerline of the tube relative to the inner surface of the tube. In another embodiment, a method of depositing a product gas onto a surface is provided. The method comprises placing a first gas into a tube; heating first and second portions of the first gas to first and second temperatures, respectively, to form the product gas, the first portion of the first gas being adjacent the centerline of the tube, the second portion of the first gas being adjacent the inner surface of the tube, the first temperature being greater than the second temperature; and depositing the product gas onto the surface.

Description

INTERNALLY HEATED PYROLYSI S ZONE AND A METHOD WHEREIN USE IS MADE OF THIS ZONE
BACKGROUND l_ Field of the Invention
The present invention relates generally to an internally heated pyrolysis zone, and more specifically to such an apparatus that can be used in the vacuum deposition of parylene monomer.
2___ Discussion of the Related Art Conformal coatings having low dielectric constants and high melting temperatures are desirable for many applications, including the medical, electronics and automotive industries.
For example, the components of an automobile that are located beneath the hood (e.g., the carburetor) are exposed to various corrosive gases as well as temperatures in excess of 200°C for extended periods of time. Conventionally, layers of parylene polymers have been used as conformal coatings since some of these layers are known to have dielectric constants of about 2.3 and melting temperatures of about 540°C. Parylene polymers are poly-p-xylylenes which may be prepared with a parylene dimer. Parylene polymers generally have a structure:
Figure imgf000003_0001
wherein X is typically a hydrogen atom or a halogen atom. The most common forms of parylene dimers include the following:
Figure imgf000003_0002
Typically, parylene polymer layers are formed by a vapor deposition method that is performed using a vacuum apparatus 10 as shown in Fig. 1, such as disclosed in U.S. Patent No. 5,538,758 which is herein incorporated by reference. Apparatus 10 includes a vaporization zone 12, a pyrolysis zone 14, a post-pyrolysis zone 16 and a deposition chamber 18.
In this method, generally referred to as the Gorham process, the parylene dimer is vaporized in vaporization zone 12 and the dimer bond is then cleaved by pyrolysis in pyrolysis zone 14 to form parylene monomer having the structure:
Figure imgf000004_0001
The parylene monomer passes through post-pyrolysis zone 16 which removes a substantial amount of undesired chemical species. The parylene monomer is then deposited onto the surface of a substrate 19 disposed within deposition chamber 18. Polymerization of the deposited parylene monomer occurs spontaneously to form the parylene polymer layer coating on the surface of substrate 19.
Fig. 2 shows a pyrolysis zone 14 which includes a tube 20 with one or more electric tube heaters 22 disposed along the outer surface 24 of wall 26 of tube 20. Heaters 22 increase the temperature of tube 20 to heat the parylene dimer disposed within the interior of tube 20, resulting in cleavage of the parylene dimer bond and formation of the parylene monomer. Due to the arrangement of heaters 22, parylene dimer disposed adjacent the inner surface 28 of wall 26 of tube 20 is maintained at a higher temperature than parylene dimer disposed adjacent the centerline 29 of tube 20. However, since the gas flow rate through tube 20 is generally highest along centerline 29 and lowest along inner surface 28, tube 20 may not be effective in heating the parylene dimer flowing adjacent centerline 29 to a temperature high enough to pyrolyze the parylene dimer and form parylene monomer. At the same time, overpyrolysis of parylene dimer adjacent inner surface 28 can occur, causing a carbonaceous residue to build up on surface 28. Typically, greater than about 1 weight percent of the vaporized parylene dimer results in carbonaceous buildup on inner surface 28. Thus, it is desirable within the art to provide an apparatus that offers improved efficiency in pyrolyzing a parylene dimer to form parylene monomer which can subsequently be deposited on a surface to yield a parylene polymer layer.
SUMMARY OF THE INVENTION
In one illustrative embodiment, the present invention provides a deposition apparatus that comprises a deposition chamber, a tube and a heating element. The tube is in fluid communication with the deposition chamber, and the heating element is constructed and arranged so that the heating element preferentially heats the centerline of the tube relative to the inner surface of the tube.
In another illustrative embodiment, the present invention provides an apparatus for depositing a gas that comprises a deposition chamber, a tube and means for preferentially heating the centerline of the tube relative to the inner surface of the tube. The tube is in fluid communication with the deposition chamber. In a further illustrative embodiment, the present invention provides an apparatus for depositing parylene monomer. The apparatus comprises a first zone for providing parylene dimer, a pyrolysis zone, a heating element and a deposition chamber. The pyrolysis zone is designed to pyrolyze the parylene dimer to form the parylene monomer. The pyrolysis zone comprises a tube and a heating element. The tube is in fluid communication with the first zone and the deposition chamber. The heating element is constructed and arranged so that the heating element preferentially heats the centerline of the tube relative to the inner surface of the tube.
In yet a further illustrative embodiment, the present invention provides an apparatus for depositing parylene monomer. The apparatus comprises a first zone for providing parylene dimer, a pyrolysis zone and a deposition chamber. The pyrolysis zone is designed to pyrolyze the parylene dimer to form parylene monomer. The pyrolysis zone comprises a tube and means for preferentially heating the centerline of the tube relative to the inner surface of the tube. The tube is in fluid communication with the first zone and the deposition chamber.
In still a further illustrative embodiment, the present invention provides a method of depositing a product gas onto a surface. The method comprises placing a first gas into a tube; heating first and second portions of the first gas to first and second temperatures, respectively, to form the product gas, the first portion of the first gas being adjacent the centerline of the tube, the second portion of the first gas being adjacent the inner surface of the tube, the first temperature being greater than the second temperature; and depositing the product gas onto the surface.
BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view of a deposition apparatus according to the related art;
Fig. 2 is a cross-sectional view of a pyrolysis zone according to the related art; Fig. 3 is a cross-sectional view of a deposition apparatus according to one embodiment the present invention; and
Fig. 4 is a cross-sectional view of a pyrolysis zone according to one embodiment of the present invention.
DETAILED DESCRIPTION Fig. 3 shows one embodiment of a deposition apparatus 20 which includes a vaporization zone 12, a pyrolysis zone 40, a post-pyrolysis zone 16 and a deposition chamber 18. Pyrolysis zone 40 (Fig. 4) includes a tube 42, a heating element 44 disposed substantially along centerline
46 of tube 48 and a power supply 50 in electrical communication with element 44 via electrical connectors 51 and 53.
Tube 42 is designed to be in fluid communication with vaporization zone 12 and post- pyrolysis zone 16 such that vaporized dimer can exit zone 12, be pyrolyzed to parylene monomer within tube 42 and pass to post-pyrolysis zone 16. Since pyrolysis occurs at temperatures of about 1000°C or less, inner surface 52 of wall 54 of tube 42 should be chemically inert to parylene dimer and parylene monomer within this temperature range. Thus, materials appropriate for use as wall 54 of tube 42 include, but are not limited to, quartz, stainless steel with a quartz inner surface, inconel with a quartz inner surface, monel with a quartz inner surface. Alternatively, the quartz may be partially or entirely replaced with certain ceramics, such as aluminum oxide, or beryllium oxide. Other such materials are known to those skilled in the art and are intended to be within the scope of the present invention.
Tube 42 may have any dimensions that allow tube 42 to be used according to the Gorham process, such as described in U.S. Patent No. 5,538,758. Typically, tube 42 is from about three feet to about four feet long with a diameter of from about 32 millimeters to about 50 millimeters.
Heating element 44 is designed to heat parylene dimer disposed within tube 42 to form parylene monomer. Element 44 may be heated using ohmic heating produced by applying a potential across element 44 using power supply 50. Therefore, element 44 should be formed from a material which is chemically inert to parylene dimer and parylene monomer at temperature of about 1000°C or less. An illustrative and nonlimiting list of such materials includes nichrome, platinum, platinum-iridium alloys, tungsten and other such materials which are known to those skilled in the art.
As shown in Fig. 4, element 44 may be in the shape of a coil with varying diameter. The largest diameter portions of element 44 should have a diameter that is about the same as the inner diameter of tube 44 such that the largest diameter portions of element 44 provide mechanical support for element 44 within tube 42. In other embodiments, element 44 may be have a substantially constant diameter along its entire length within tube 42. For these embodiments, mechanical support for element 44 may be provided by, for example, ceramic spacers, or perforated washers. While certain types of mechanical supports have been disclosed herein, it is to be understood that other supports may also be used so long as they are capable of supporting element 44 in its preferred position. It should be noted that such mechanical supports should not substantially reduce the throughput or flow rate of gas through tube 42. Element 44 is limited only in that it should be capable of preferentially heating a gas disposed along centerline 46 relative to inner surface 52 of tube 42 without substantially reducing the throughput or flow rate of gas through tube 42. Accordingly, in some embodiments, element 44 may be in the form of a mesh, a ribbon wire, a rounded wire, a rod with heat conducting fins or other such arrangements as will be apparent to those skilled in the art.
It is an advantage of the present invention that parylene deposition may be carried out without substantial carbonaceous buildup on inner surface 52 of pyrolysis tube 42. Preferably, less than about 1 weight percent of the vaporized parylene dimer forms carbonaceous material on inner surface 52, more preferably less than about 0.5 weight percent, and most preferably less than about 0.1 weight percent.
It is to be noted that, in certain embodiments, pyrolysis tube 42 may include one or more components formed of pyrex, quartz or similar materials that are bent and disposed within the interior of tube 42 such that a gas flowing through tube 42 can follow a tortuous path. Such devices, often referred to as static mixers, are known to those skilled in the art. For these embodiments, heating element 44 may also be disposed within the interior of tube 42 as described herein. Having thus described certain embodiments of the present invention, various alterations, modification and improvements will be apparent to those skilled in the art. Such alterations, modifications and improvements are intended to be within the spirit and scope of the present invention. For example, in certain embodiments, deposition apparatus 10 does not include post- pyrolysis zone 16. For these embodiments, tube 48 should be in fluid communication with both vaporization zone 12 and deposition zone 18. Furthermore, in some embodiments, tube 48 may include heating element 44 within the interior of tube 48 and one or more heaters 22 disposed along the outer surface of wall 54. Accordingly, the foregoing description is by way of example only and is not intended as limiting. The invention is limited only as defined by the following claims and the equivalents thereto.
What is claimed is:

Claims

1. A deposition apparatus, comprising: a deposition chamber; a tube in fluid communication with the deposition chamber, the tube having a centerline and an inner surface; and a heating element constructed and arranged so that the heating element preferentially heats the centerline of the tube relative to the inner surface of the tube.
2. The deposition apparatus according to claim 1, wherein the heating element is disposed within the interior of the tube.
3. The deposition apparatus according to claim 1, wherein the heating element is disposed adjacent the centerline of the tube.
4. The deposition apparatus according to claim 1, wherein the heating element is disposed along the centerline of the tube.
5. The deposition apparatus according to claim 1, wherein the tube and the heating element form a portion of a pyrolysis zone.
6. The deposition apparatus according to claim 1, further comprising a zone for providing a first gas, the tube being disposed between the zone for providing the first gas and the deposition chamber, the zone for providing the first gas being in fluid communication with the tube.
7. The deposition apparatus according to claim 6, wherein the zone for providing the first gas is a vaporization zone.
8. The deposition apparatus according to claim 7, wherein the tube and the heating element form a portion of a pyrolysis zone, the pyrolysis zone being in fluid communication with the tube.
9. The deposition apparatus according to claim 8, wherein the pyrolysis zone heats the first gas to form a second gas.
10. The deposition apparatus according to claim 9, further comprising a substrate support disposed within the deposition chamber so that the second gas can be deposited on a surface of a substrate disposed along the substrate support.
11. The deposition apparatus according to claim 8, further comprising a post- pyrolysis zone disposed between the deposition chamber and the pyrolysis zone, the post- pyrolysis zone being in fluid communication with the tube.
12. An apparatus for depositing a gas, comprising: a deposition chamber; a tube in fluid communication with the deposition chamber, the tube having a centerline and an inner surface; and means for preferentially heating the centerline of the tube relative to the inner surface of the tube.
13. The deposition apparatus according to claim 12, further comprising a zone for providing a gas, the means for preferentially heating the centerline of the tube being disposed between the zone for providing the gas and the deposition chamber, the zone for providing the gas being in fluid communication with the means for preferentially heating the centerline of the tube.
14. The deposition apparatus according to claim 13, wherein the zone for providing the gas is a vaporization zone.
15. The deposition apparatus according to claim 14, further comprising a substrate support disposed within the deposition chamber.
16. The deposition apparatus according to claim 14, further comprising a post- pyrolysis zone disposed between the deposition chamber and the means for preferentially heating the centerline of the tube, the post-pyrolysis zone being in fluid communication with the deposition chamber.
17. An apparatus for depositing parylene monomer, comprising: a first zone for providing parylene dimer; a pyrolysis zone for pyrolyzing the parylene dimer to form the parylene monomer, the pyrolysis zone comprising: a tube in fluid communication with the first zone, the tube having an inner surface and a centerline; and a heating element constructed and arranged so that the heating element preferentially heats the centerline of the tube relative to the inner surface of the tube; and a deposition chamber in fluid communication with the tube.
18. The apparatus according to claim 17, wherein the heating element is disposed within the interior of the tube.
19. The apparatus according to claim 17, wherein the heating element is disposed adjacent the centerline of the tube.
20. The apparatus according to claim 17, wherein the heating element is disposed along the centerline of the tube.
21. The apparatus according to claim 17, wherein the first zone is a vaporization zone.
22. The apparatus according to claim 17, further comprising a substrate support disposed within the deposition chamber so that the parylene monomer can be deposited on a surface of a substrate disposed along the substrate support.
23. The apparatus according to claim 17, further comprising a post-pyrolysis zone disposed between the deposition chamber and the pyrolysis zone, the post-pyrolysis zone being in fluid communication with the tube.
24. The apparatus according to claim 23, further comprising a substrate support disposed within the deposition chamber so that the parylene monomer can be deposited on a surface of a substrate disposed along the substrate.
25. The apparatus according to claim 23, wherein the heating element is disposed within the interior of the tube.
26. The apparatus according to claim 23, wherein the heating element is disposed adjacent the centerline of the tube.
27. The apparatus according to claim 23, wherein the heating element is disposed along the centerline of the tube.
28. The apparatus according to claim 27, wherein the first zone is a vaporization zone.
29. An apparatus for depositing parylene monomer, comprising: a first zone for providing parylene dimer; a pyrolysis zone for pyrolyzing the parylene dimer to form the parylene monomer, the pyrolysis zone comprising: a tube in fluid communication with the deposition chamber, the tube having a centerline and an inner surface; and means for preferentially heating the centerline of the tube relative to the inner surface of the tube; and a deposition chamber in fluid communication with the tube.
30. The apparatus according to claim 29, wherein the first zone is a vaporization zone.
31. The apparatus according to claim 29, further comprising a substrate support disposed within the deposition chamber so that the parylene monomer can be deposited on a surface of a substrate disposed along the substrate support.
32. The apparatus according to claim 29, further comprising a post-pyrolysis zone disposed between the deposition chamber and the pyrolysis zone, the post-pyrolysis zone being in fluid communication with the tube.
33. The apparatus according to claim 32, further comprising a substrate support disposed within the deposition chamber so that the parylene monomer can be deposited on a surface of a substrate disposed along the substrate.
34. The apparatus according to claim 33, wherein the first zone is a vaporization zone.
35. A method of depositing a product gas onto a surface, the method comprising the steps of:
(a) placing a first gas into a tube;
(b) heating first and second portions of the first gas to first and second temperatures, respectively, to form the product gas, the first portion of the first gas being adjacent a centerline of the tube, the second portion of the first gas being adjacent an inner surface of the tube, the first temperature being greater than the second temperature; and
(c) depositing the product gas onto the surface.
36. The method according to claim 35, further comprising, between step (b) and step (c), the step of passing the product gas into a deposition chamber.
37. The method according to claim 35, wherein step (b) includes heating the first and second portions of the first gas with a heating element disposed within an interior of the tube.
38. The method according to claim 35, wherein step (b) includes heating the first and second portions of the first gas with a heating element disposed along a centerline of the tube.
39. The method according to claim 35, wherein step (a) includes placing the first gas into a pyrolysis zone.
40. The deposition apparatus according to claim 1 , wherein the heating element is a coiled wire.
41. The deposition apparatus according to claim 1, wherein the heating element is a coiled wire having first and second diameters, the first diameter being less than an inner diameter of the tube, the second diameter being about the inner diameter of the tube.
42. The deposition apparatus according to claim .12, wherein the heating element is a coiled wire.
43. The deposition apparatus according to claim 12, wherein the heating element is a coiled wire having first and second diameters, the first diameter being less than an inner diameter of the tube, the second diameter being about the inner diameter of the tube.
44. The deposition apparatus according to claim 17, wherein the heating element is a coiled wire.
45. The deposition apparatus according to claim 17, wherein the heating element is a coiled wire having first and second diameters, the first diameter being less than an inner diameter of the tube, the second diameter being about the inner diameter of the tube.
46. The deposition apparatus according to claim 29, wherein the heating element is a - coiled wire.
47. The deposition apparatus according to claim 29, wherein the heating element is a coiled wire having first and second diameters, the first diameter being less than an inner diameter of the tube, the second diameter being about the inner diameter of the tube.
48. The apparatus according to claim 6, wherein less than about 1 weight percent of the first gas vaporized in the zone for providing the first gas results in carbonaceous residue on the inner surface of the tube.
49. The apparatus according to claim 17, wherein less than about 1 weight percent of the parylene dimer vaporized in the first zone results in carbonaceous residue on the inner surface of the tube.
50. The apparatus according to claim 29, wherein less than about 1 weight percent of the parylene dimer vaporized in the first zone results in carbonaceous residue on the inner surface of the tube.
PCT/US1998/003657 1997-03-14 1998-02-25 Internally heated pyrolysis zone and a method wherein use is made of this zone WO1998041670A1 (en)

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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6305314B1 (en) * 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US7083642B2 (en) * 2000-12-22 2006-08-01 Avantec Vascular Corporation Delivery of therapeutic capable agents
US6939375B2 (en) 2000-12-22 2005-09-06 Avantac Vascular Corporation Apparatus and methods for controlled substance delivery from implanted prostheses
US6471980B2 (en) 2000-12-22 2002-10-29 Avantec Vascular Corporation Intravascular delivery of mycophenolic acid
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US20030050692A1 (en) * 2000-12-22 2003-03-13 Avantec Vascular Corporation Delivery of therapeutic capable agents
US20050125054A1 (en) * 2000-12-22 2005-06-09 Avantec Vascular Corporation Devices delivering therapeutic agents and methods regarding the same
US20030033007A1 (en) * 2000-12-22 2003-02-13 Avantec Vascular Corporation Methods and devices for delivery of therapeutic capable agents with variable release profile
US20020082679A1 (en) * 2000-12-22 2002-06-27 Avantec Vascular Corporation Delivery or therapeutic capable agents
US20050203612A1 (en) * 2000-12-22 2005-09-15 Avantec Vascular Corporation Devices delivering therapeutic agents and methods regarding the same
WO2003009779A2 (en) * 2001-07-26 2003-02-06 Avantec Vascular Corporation Delivery of therapeutic capable agents
EP1478648B1 (en) 2002-02-01 2014-04-30 ARIAD Pharmaceuticals, Inc. Phosphorus-containing compounds and uses thereof
US8287583B2 (en) 2005-01-10 2012-10-16 Taheri Laduca Llc Apparatus and method for deploying an implantable device within the body
US20070150051A1 (en) * 2005-01-10 2007-06-28 Duke Fiduciary, Llc Vascular implants and methods of fabricating the same
FI121430B (en) * 2006-04-28 2010-11-15 Beneq Oy Hot spring
WO2008098252A2 (en) 2007-02-09 2008-08-14 Taheri Laduca Llc Vascular implants and methods of fabricating the same
EP3589243A1 (en) 2017-02-28 2020-01-08 University College Cork - National University of Ireland, Cork An intravascular cell therapy device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0371796A2 (en) * 1988-11-30 1990-06-06 Fujitsu Limited Apparatus and process for chemical vapor deposition
DE4006489A1 (en) * 1990-03-02 1991-09-05 Hoechst Ag DEVICE FOR PRODUCING THIN LAYERS FROM METAL MIXED OXIDS FROM ORGANIC METAL COMPOUNDS ON A SUBSTRATE
US5556473A (en) * 1995-10-27 1996-09-17 Specialty Coating Systems, Inc. Parylene deposition apparatus including dry vacuum pump system and downstream cold trap

Family Cites Families (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB650947A (en) * 1947-09-19 1951-03-07 Michael Mojzesz Szwarc The production of new polymers
US3211128A (en) * 1962-05-31 1965-10-12 Roy F Potter Vacuum evaporator apparatus
US3246627A (en) * 1962-10-05 1966-04-19 Union Carbide Corp Apparatus for vapor deposition
US3301707A (en) * 1962-12-27 1967-01-31 Union Carbide Corp Thin film resistors and methods of making thereof
US3393864A (en) * 1966-04-11 1968-07-23 Beckman Instruments Inc Centrifuge apparatus
US3472795A (en) * 1967-03-10 1969-10-14 Union Carbide Corp Polymerization process
US3573968A (en) * 1968-01-22 1971-04-06 Union Carbide Corp Process for coating solid substrates with para-xylylene polymers
US3600216A (en) * 1968-09-06 1971-08-17 Union Carbide Corp Process for adhering poly-p-xylylene to substrates using silane primers and articles obtained thereby
US3570449A (en) * 1969-03-13 1971-03-16 United Aircraft Corp Sensor system for a vacuum deposition apparatus
US3554512A (en) * 1969-03-24 1971-01-12 George H Elliott Crucible for holding molten semiconductor materials
US3667424A (en) * 1969-04-14 1972-06-06 Stanford Research Inst Multi-station vacuum apparatus
US3670693A (en) * 1971-03-23 1972-06-20 Collins Radio Co Quartz crystal resonator tuning control apparatus
US3749601A (en) * 1971-04-01 1973-07-31 Hughes Aircraft Co Encapsulated packaged electronic assembly
US3747558A (en) * 1972-11-03 1973-07-24 Us Air Force Cross-mounted mask changer with thickness monitoring
US4110392A (en) * 1976-12-17 1978-08-29 W. L. Gore & Associates, Inc. Production of porous sintered PTFE products
US4184188A (en) * 1978-01-16 1980-01-15 Veeco Instruments Inc. Substrate clamping technique in IC fabrication processes
US4323031A (en) * 1979-04-30 1982-04-06 Alan Kaplan Crystal plating apparatus
US4401052A (en) * 1979-05-29 1983-08-30 The University Of Delaware Apparatus for continuous deposition by vacuum evaporation
US4261762A (en) * 1979-09-14 1981-04-14 Eaton Corporation Method for conducting heat to or from an article being treated under vacuum
CH644722A5 (en) * 1980-07-21 1984-08-15 Balzers Hochvakuum SWINGING QUARTZ MEASURING HEAD.
CA1187622A (en) * 1981-03-11 1985-05-21 Zoltan J. Kiss Semiconductor device having a body of amorphous silicon
EP0102417A1 (en) * 1982-08-24 1984-03-14 New-Come Filters Limited A gas filter device
US4518623A (en) * 1982-11-24 1985-05-21 Riley Thomas J Polymeric film coating method with continuous deposition pressure control
US4495889A (en) * 1982-11-24 1985-01-29 Riley Thomas J Polymeric film coating apparatus
US4468283A (en) * 1982-12-17 1984-08-28 Irfan Ahmed Method for etching and controlled chemical vapor deposition
US4508055A (en) * 1983-06-03 1985-04-02 The United States Of America As Represented By The Secretary Of The Navy Device for cryogenically fabricating source material for plasma X-ray lasers
US4577465A (en) * 1984-05-11 1986-03-25 Helix Technology Corporation Oil free vacuum system
DE3420246A1 (en) * 1984-05-30 1985-12-05 Leybold-Heraeus GmbH, 5000 Köln EVAPORATOR FOR VACUUM VACUUM DEVICES
US4596208A (en) * 1984-11-05 1986-06-24 Spire Corporation CVD reaction chamber
US4619844A (en) * 1985-01-22 1986-10-28 Fairchild Camera Instrument Corp. Method and apparatus for low pressure chemical vapor deposition
DE3510432A1 (en) * 1985-03-22 1986-09-25 Merck Patent Gmbh, 6100 Darmstadt CYCLOHEXANDERIVATE
KR900001666B1 (en) * 1985-07-19 1990-03-17 후지쓰가부시끼가이샤 Metal organic chemical vapor deposition apparatus for epitataxin growth of chemical semiconductor
US4957781A (en) * 1985-07-22 1990-09-18 Hitachi, Ltd. Processing apparatus
IT1191633B (en) * 1985-10-30 1988-03-23 Montedison Spa PROCEDURE FOR THE PREPARATION OF (2,2) -HALOGENATED PARACYCLOPHANS AND MIXTURES OF (2,2) -HALOGENATED PARACYCLOPHANS OBTAINED
IT1191645B (en) * 1985-12-19 1988-03-23 Montedison Spa PROCESS FOR THE PREPARATION OF (2,2) -PARACYCLOPHANE AND ITS DERIVATIVES
US4683143A (en) * 1986-04-08 1987-07-28 Riley John A Method and apparatus for automated polymeric film coating
DE3780511T2 (en) * 1986-05-23 1993-03-04 Gore & Ass HIGH PERFORMANCE GAS FILTER.
US4761269A (en) * 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
IT1190647B (en) * 1986-06-27 1988-02-16 Montedison Spa PROCESS FOR THE PREPARATION OF (2,2) -PARACYCLOPHANE AND ITS DERIVATIVES
IT1190350B (en) * 1986-06-27 1988-02-16 Montedison Spa PROCESS FOR THE PREPARATION OF (2,2) -PARACYCLOPHANE AND ITS DERIVATIVES
US5228501A (en) * 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
IT1203876B (en) * 1987-04-10 1989-02-23 Montedison Spa PROCESS FOR THE PREPARATION OF (2,2) -PARACYCLOPHANE AND ITS DERIVATIVES
US5151133A (en) * 1987-04-14 1992-09-29 Kabushiki Kaisha Toshiba Vapor deposition apparatus
US5002011A (en) * 1987-04-14 1991-03-26 Kabushiki Kaisha Toshiba Vapor deposition apparatus
IT1222683B (en) * 1987-09-18 1990-09-12 Montedison Spa TRICYCLE PREPARATION PROCESS 8.2.2.2. HEXADECA 4,6,10,12,13,15 ESAENE CHLORIDE IN BENZENIC NUCLEI
DE3885240D1 (en) * 1987-12-03 1993-12-02 Balzers Hochvakuum Method and device for transferring thermal energy to or from a plate-shaped substrate.
EP0319347B1 (en) * 1987-12-04 1994-08-03 Research Development Corporation of Japan Vacuum depositing apparatus
US4902572A (en) * 1988-04-19 1990-02-20 The Boeing Company Film deposition system
US5078091A (en) * 1988-06-23 1992-01-07 Jeffrey Stewart Parylene deposition chamber and method of use
US4945856A (en) * 1988-06-23 1990-08-07 Jeffrey Stewart Parylene deposition chamber
US5167717A (en) * 1989-02-15 1992-12-01 Charles Boitnott Apparatus and method for processing a semiconductor wafer
US5088444A (en) * 1989-03-15 1992-02-18 Kabushiki Kaisha Toshiba Vapor deposition system
US5186120A (en) * 1989-03-22 1993-02-16 Mitsubishi Denki Kabushiki Kaisha Mixture thin film forming apparatus
DE3914502A1 (en) * 1989-05-02 1990-11-15 Goldschmidt Ag Th METHOD FOR OBTAINING AND MAINTAINING A LOW-OXYGEN, INERT ATMOSPHERES IN A TREATMENT CHAMBER, AND DEVICE FOR IMPLEMENTING THE METHOD
US5248370A (en) * 1989-05-08 1993-09-28 Applied Materials, Inc. Apparatus for heating and cooling semiconductor wafers in semiconductor wafer processing equipment
JP2888253B2 (en) * 1989-07-20 1999-05-10 富士通株式会社 Chemical vapor deposition and apparatus for its implementation
US5078851A (en) * 1989-07-26 1992-01-07 Kouji Nishihata Low-temperature plasma processor
GB2234988B (en) * 1989-08-16 1993-12-08 Qpl Limited Improvements in vacuum deposition machines
US5250323A (en) * 1989-10-30 1993-10-05 Kabushiki Kaisha Toshiba Chemical vapor growth apparatus having an exhaust device including trap
US4990374A (en) * 1989-11-28 1991-02-05 Cvd Incorporated Selective area chemical vapor deposition
US5123375A (en) * 1990-01-08 1992-06-23 Lsi Logic Corporation Structure for filtering CVD chamber process gases
US5129360A (en) * 1990-01-24 1992-07-14 The United States Of America As Represented By The Secretary Of The Air Force Actively cooled effusion cell for chemical vapor deposition
US5015503A (en) * 1990-02-07 1991-05-14 The University Of Delaware Apparatus for producing compound semiconductor thin films
US5112642A (en) * 1990-03-30 1992-05-12 Leybold Inficon, Inc. Measuring and controlling deposition on a piezoelectric monitor crystal
US5221403A (en) * 1990-07-20 1993-06-22 Tokyo Electron Limited Support table for plate-like body and processing apparatus using the table
JP2583152B2 (en) * 1990-11-06 1997-02-19 大日本スクリーン製造株式会社 Substrate rotating surface treatment method
DE4035789C1 (en) * 1990-11-10 1991-06-13 Mtu Muenchen Gmbh
FR2670507B1 (en) * 1990-12-18 1993-12-31 Propulsion Ste Europeenne CHEMICAL STEAM INFILTRATION PROCESS.
JP2532401Y2 (en) * 1991-04-16 1997-04-16 ソニー株式会社 Bias ECR plasma CVD equipment
US5268033A (en) * 1991-07-01 1993-12-07 Jeffrey Stewart Table top parylene deposition chamber
JP2580928Y2 (en) * 1991-08-22 1998-09-17 日本電気株式会社 Vapor phase growth equipment
US5261963A (en) * 1991-12-04 1993-11-16 Howmet Corporation CVD apparatus comprising exhaust gas condensation means
JPH05166757A (en) * 1991-12-13 1993-07-02 Tokyo Electron Ltd Temperature regulator for material to be pr0cessed
US5264039A (en) * 1992-02-24 1993-11-23 Union Carbide Chemicals & Plastics Technology Corporation Vapor deposition apparatus
JP2766433B2 (en) * 1992-07-23 1998-06-18 株式会社東芝 Semiconductor vapor deposition equipment
US5324540A (en) * 1992-08-17 1994-06-28 Tokyo Electron Limited System and method for supporting and rotating substrates in a process chamber
US5268202A (en) * 1992-10-09 1993-12-07 Rensselaer Polytechnic Institute Vapor deposition of parylene-F using 1,4-bis (trifluoromethyl) benzene
JP2906006B2 (en) * 1992-10-15 1999-06-14 東京エレクトロン株式会社 Processing method and apparatus
US5262194A (en) * 1992-11-10 1993-11-16 Dielectric Coating Industries Methods and apparatus for controlling film deposition
US5292554A (en) * 1992-11-12 1994-03-08 Applied Materials, Inc. Deposition apparatus using a perforated pumping plate
JPH06158361A (en) * 1992-11-20 1994-06-07 Hitachi Ltd Plasma treating device
US5355832A (en) * 1992-12-15 1994-10-18 Advanced Surface Technology, Inc. Polymerization reactor
US5266118A (en) * 1993-01-22 1993-11-30 Loral Vought Systems Corporation Vessel for growing thin films by isothermal vapor phase epitaxy
US5302767A (en) * 1993-03-26 1994-04-12 Union Carbide Chemicals & Plastics Technology Corporation [2.2] paracyclophane and derivatives thereof
CA2147813A1 (en) * 1994-04-28 1995-10-29 Richard Dixon Intravascular prosthesis with anti-thrombogenic coating
US5470802A (en) * 1994-05-20 1995-11-28 Texas Instruments Incorporated Method of making a semiconductor device using a low dielectric constant material
US5536322A (en) * 1995-10-27 1996-07-16 Specialty Coating Systems, Inc. Parylene deposition apparatus including a heated and cooled support platen and an electrostatic clamping device
US5536321A (en) * 1995-10-27 1996-07-16 Specialty Coating Systems, Inc. Parylene deposition apparatus including a post-pyrolysis filtering chamber and a deposition chamber inlet filter
US5536317A (en) * 1995-10-27 1996-07-16 Specialty Coating Systems, Inc. Parylene deposition apparatus including a quartz crystal thickness/rate controller
US5534068A (en) * 1995-10-27 1996-07-09 Specialty Coating Systems, Inc. Parylene deposition apparatus including a tapered deposition chamber and dual vacuum outlet pumping arrangement

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0371796A2 (en) * 1988-11-30 1990-06-06 Fujitsu Limited Apparatus and process for chemical vapor deposition
DE4006489A1 (en) * 1990-03-02 1991-09-05 Hoechst Ag DEVICE FOR PRODUCING THIN LAYERS FROM METAL MIXED OXIDS FROM ORGANIC METAL COMPOUNDS ON A SUBSTRATE
US5556473A (en) * 1995-10-27 1996-09-17 Specialty Coating Systems, Inc. Parylene deposition apparatus including dry vacuum pump system and downstream cold trap

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