WO1998032153A3 - Electron beam dose control for scanning electron microscopy andcritical dimension measurement instruments - Google Patents

Electron beam dose control for scanning electron microscopy andcritical dimension measurement instruments Download PDF

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Publication number
WO1998032153A3
WO1998032153A3 PCT/US1998/000782 US9800782W WO9832153A3 WO 1998032153 A3 WO1998032153 A3 WO 1998032153A3 US 9800782 W US9800782 W US 9800782W WO 9832153 A3 WO9832153 A3 WO 9832153A3
Authority
WO
WIPO (PCT)
Prior art keywords
scan
electron beam
specimen
andcritical
area
Prior art date
Application number
PCT/US1998/000782
Other languages
French (fr)
Other versions
WO1998032153A2 (en
WO1998032153A9 (en
Inventor
Neil Richardson
Farid Askary
Stefano E Concina
Kevin M Monahan
David L Adler
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Priority to DE69841559T priority Critical patent/DE69841559D1/en
Priority to JP53452598A priority patent/JP4057653B2/en
Priority to AU59194/98A priority patent/AU5919498A/en
Priority to EP98902566A priority patent/EP0953203B1/en
Publication of WO1998032153A2 publication Critical patent/WO1998032153A2/en
Publication of WO1998032153A3 publication Critical patent/WO1998032153A3/en
Publication of WO1998032153A9 publication Critical patent/WO1998032153A9/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Abstract

A system and method for controlling electron exposure on image specimens by adjusting a raster scan area in-between scan frame cycles. A small, zoomed-in, scan area and the surrounding area are flooded with positive charge for a number of frame cycles between scan frames to reduce the voltage differential between the scan area and surrounding area, thereby reducing the positive charge build-up which tends to obscure small features in scanned images. The peak current into a pixel element on the specimen is reduced by scanning the beam with a line period that is very short compared to regular video. Frames of image data may further be acquired non-sequentially, in arbitrarily programmable patterns. Alternatively, an inert gas can be injected into the scanning electron microscope at the point where the electron beam impinges the specimen to neutralize a charge build-up on the specimen by the ionization of the inert gas by the electron beam.
PCT/US1998/000782 1997-01-16 1998-01-16 Electron beam dose control for scanning electron microscopy andcritical dimension measurement instruments WO1998032153A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE69841559T DE69841559D1 (en) 1997-01-16 1998-01-16 Electron beam dose monitoring in scanning electron microscopy and critical size measurement equipment
JP53452598A JP4057653B2 (en) 1997-01-16 1998-01-16 Electron beam dose control for scanning electron microscopy and critical dimension measuring instruments
AU59194/98A AU5919498A (en) 1997-01-16 1998-01-16 Electron beam dose control for scanning electron microscopy and critical dimension measurement instruments
EP98902566A EP0953203B1 (en) 1997-01-16 1998-01-16 Electron beam dose control for scanning electron microscopy and critical dimension measurement instruments

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/784,749 US5869833A (en) 1997-01-16 1997-01-16 Electron beam dose control for scanning electron microscopy and critical dimension measurement instruments
US08/784,749 1997-01-16

Publications (3)

Publication Number Publication Date
WO1998032153A2 WO1998032153A2 (en) 1998-07-23
WO1998032153A3 true WO1998032153A3 (en) 1998-11-26
WO1998032153A9 WO1998032153A9 (en) 1998-12-30

Family

ID=25133416

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1998/000782 WO1998032153A2 (en) 1997-01-16 1998-01-16 Electron beam dose control for scanning electron microscopy andcritical dimension measurement instruments

Country Status (6)

Country Link
US (2) US5869833A (en)
EP (1) EP0953203B1 (en)
JP (2) JP4057653B2 (en)
AU (1) AU5919498A (en)
DE (1) DE69841559D1 (en)
WO (1) WO1998032153A2 (en)

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US8804897B2 (en) * 2006-07-21 2014-08-12 Areva Inc. Integrated method to analyze crystals in deposits
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US8698093B1 (en) 2007-01-19 2014-04-15 Kla-Tencor Corporation Objective lens with deflector plates immersed in electrostatic lens field
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Also Published As

Publication number Publication date
JP4057653B2 (en) 2008-03-05
EP0953203A2 (en) 1999-11-03
JP2001508592A (en) 2001-06-26
US5869833A (en) 1999-02-09
JP2007207737A (en) 2007-08-16
US6211518B1 (en) 2001-04-03
WO1998032153A2 (en) 1998-07-23
DE69841559D1 (en) 2010-04-29
AU5919498A (en) 1998-08-07
EP0953203B1 (en) 2010-03-17

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