WO1996011498A1 - Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications - Google Patents
Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications Download PDFInfo
- Publication number
- WO1996011498A1 WO1996011498A1 PCT/EP1994/003346 EP9403346W WO9611498A1 WO 1996011498 A1 WO1996011498 A1 WO 1996011498A1 EP 9403346 W EP9403346 W EP 9403346W WO 9611498 A1 WO9611498 A1 WO 9611498A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- leds
- array
- led
- light
- multicolor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0033—Devices characterised by their operation having Schottky barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0037—Devices characterised by their operation having a MIS barrier layer
Definitions
- a monolithic multicolor LED array in accordance with this invention is realized by growing an appropriate layered structure of semiconductors on an appropriate substrate whereby the layer serving as the active layer of the LEDs is doped in agreement with the above-mentioned criteria, and by subsequently fabricating a multitude of LEDs on said layered structure, whereby the LEDs can be independently biased.
- Fig. 2 shows as an example a 2-dimensional distribution of pixels 1 - 3, each representing one of three elementary colors blue, green, and red.
- fabrication steps for different LED arrays which reproduce such a pixel distribution are illustrated. It is obvious, that this example can be modified in many ways.
- the colors, the number of different colors, the size, the shape and the arrangements of the pixels are arbitrary. However, this is an extreme example illustrating relevant features of this invention.
- This particular arrangement of pixels is suited for full color displays for the presentation of color images, since the arrangement can be interpreted as regular pattern generated from three subpixels, a blue, a green, and a red one, by equal translations in two dimensions.
- the shape of the metal contact defines the light pattern emitted by the LEDs
- transparent metals e. g. ITO, i. e. indium tin oxide
- ITO indium tin oxide
- Most metals absorb visible light. If such non-transparent metals are used for the metal contacts, the light of the LEDs can only be emitted through the substrate.
- the conductivity of the doped layer might not be sufficient for such contacts to the conductive layer 31.
- a multitude of contact holes or trenches can be etched through the active layer and an appropriate wiring of conductive material 32.x can be installed to provide a low series resistance for all LEDs.
- contact areas are defined for each LED on top of the active layer 34 (or D,), and metal contacts 33.x of appropriate shape corresponding to the desired shape of the pixels are realized, whereby known procedures for the metallurgy (see References cited above) and the pattern definition such as photolithographical steps or printing can be used. The application of these processing steps leads to the structure depicted in Fig. 3A.
- the option of etching away parts of the uppermost cladding layer and the active layer has been chosen.
- approaches to form contacts for biasing individual LEDs the same arguments hold as those given above in the context of MIS-devices.
- the lower cladding layer 42 can be used as common electrode for all LEDs.
- one terminal of each particular device is connected to the row-line attributed to the device, and the other terminal of each particular device is connected to the column line attributed to the device, and a particular device is activated by applying a bias to the appropriate row- and column line, simultaneously.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/809,162 US5952680A (en) | 1994-10-11 | 1994-10-11 | Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications |
KR1019970702368A KR100268567B1 (en) | 1994-10-11 | 1994-10-11 | Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications |
JP8512277A JPH10500535A (en) | 1994-10-11 | 1994-10-11 | Monolithic array of light emitting diodes for generating light at multiple wavelengths and uses thereof for multicolor display applications |
DE69425383T DE69425383T2 (en) | 1994-10-11 | 1994-10-11 | MONOELECTRIC ARRANGEMENT OF LIGHT-EMITTING DIODES FOR LIGHT GENERATING MULTIPLE WAVELENGTHS AND THEIR APPLICATION FOR MULTI-COLOR DISPLAY DEVICES |
PCT/EP1994/003346 WO1996011498A1 (en) | 1994-10-11 | 1994-10-11 | Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications |
EP94929530A EP0786149B1 (en) | 1994-10-11 | 1994-10-11 | Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications |
PCT/IB1995/000367 WO1996011499A1 (en) | 1994-10-11 | 1995-05-17 | Monolithic light emitting diode arrays and display assemblies based thereon |
PCT/IB1995/000595 WO1996011502A1 (en) | 1994-10-11 | 1995-07-31 | WAVELENGTH TUNING OF GaN-BASED LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS AND DISPLAYS BY INTRODUCTION OF DEEP DONORS |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP1994/003346 WO1996011498A1 (en) | 1994-10-11 | 1994-10-11 | Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1996011498A1 true WO1996011498A1 (en) | 1996-04-18 |
Family
ID=8165902
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP1994/003346 WO1996011498A1 (en) | 1994-10-11 | 1994-10-11 | Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications |
PCT/IB1995/000367 WO1996011499A1 (en) | 1994-10-11 | 1995-05-17 | Monolithic light emitting diode arrays and display assemblies based thereon |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB1995/000367 WO1996011499A1 (en) | 1994-10-11 | 1995-05-17 | Monolithic light emitting diode arrays and display assemblies based thereon |
Country Status (6)
Country | Link |
---|---|
US (1) | US5952680A (en) |
EP (1) | EP0786149B1 (en) |
JP (1) | JPH10500535A (en) |
KR (1) | KR100268567B1 (en) |
DE (1) | DE69425383T2 (en) |
WO (2) | WO1996011498A1 (en) |
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- 1994-10-11 KR KR1019970702368A patent/KR100268567B1/en not_active IP Right Cessation
- 1994-10-11 WO PCT/EP1994/003346 patent/WO1996011498A1/en active IP Right Grant
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US8934513B2 (en) | 1994-09-14 | 2015-01-13 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
KR100605249B1 (en) * | 1998-09-23 | 2006-10-04 | 삼성전자주식회사 | LCD module |
EP0996173A2 (en) * | 1998-10-23 | 2000-04-26 | Xerox Corporation | Light-emitting devices including polycrystalline GaN layers and method of forming devices |
EP0996173A3 (en) * | 1998-10-23 | 2000-08-23 | Xerox Corporation | Light-emitting devices including polycrystalline GaN layers and method of forming devices |
US6593901B1 (en) | 1998-12-15 | 2003-07-15 | Citizen Watch Co., Ltd. | Electronic device |
WO2001020689A1 (en) * | 1999-09-10 | 2001-03-22 | Osram Opto Semiconductors Gmbh & Co. Ohg | Method for producing a laterally integrated, monolithic light-emitting semiconductor component and a light-emitting semiconductor component |
GB2609474A (en) * | 2021-08-04 | 2023-02-08 | Iqe Plc | Multi-wavelength light-emitting semiconductor devices |
Also Published As
Publication number | Publication date |
---|---|
KR970706612A (en) | 1997-11-03 |
WO1996011499A1 (en) | 1996-04-18 |
EP0786149A1 (en) | 1997-07-30 |
KR100268567B1 (en) | 2000-10-16 |
EP0786149B1 (en) | 2000-07-26 |
US5952680A (en) | 1999-09-14 |
DE69425383D1 (en) | 2000-08-31 |
JPH10500535A (en) | 1998-01-13 |
DE69425383T2 (en) | 2001-02-15 |
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