WO1987007760A1 - Dual plasma microwave apparatus and method for treating a surface - Google Patents
Dual plasma microwave apparatus and method for treating a surface Download PDFInfo
- Publication number
- WO1987007760A1 WO1987007760A1 PCT/US1987/001427 US8701427W WO8707760A1 WO 1987007760 A1 WO1987007760 A1 WO 1987007760A1 US 8701427 W US8701427 W US 8701427W WO 8707760 A1 WO8707760 A1 WO 8707760A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- applicator
- chamber
- ion
- microwave
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
- H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
- H01J37/32256—Tuning means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
- H01J37/32284—Means for controlling or selecting resonance mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
A plasma apparatus which generates a radio frequency (UHF or microwave) disk plasma (16) and a hybrid plasma (45) derived from the disk plasma. The microwave plasma acts as a source of excited ion and free radical species and electrons for the second plasma which is hybrid in that it contains species from both microwave and dc (or rf depending on bias) excitation. The hybrid plasma can be used to treat an article (43) with different species than are present in the disk plasma and provides more control in this regard than a single plasma.
Description
DUAL PLASMA MICROWAVE APPARATUS AND METHOD FOR TREATING A SURFACE
Cross-Reference to Related Application
This application is a continuation-in-part of U.S. application Serial No. 798,309, filed November 15, 1985 which is a division of U.S. application Serial No. 641,190, filed August 16, 1984, now U.S. "Patent No.
4,585,668 and a continuation-in-part of Application Serial No. 849,052 filed April 7, 1986 which is a continuation-in-part of Serial No. 641,190 referred to previously. BACKGROUND OF THE INVENTION
(1) Field of the Invention
The present invention relates to a dual plasma UHF or microwave apparatus and method. In particular the present invention relates to a UHF or microwave plasma apparatus which allows the formation of a second hybrid plasma for treatment of an article separate from a first disk plasma which is the source of the hybrid plasma. The hybrid plasma is a combination of a microwave and a D.C. or R.F. plasma and is used to treat a surface of an article in a different manner than the disk plasma.
(2) Prior Art
U.S. Patent No. 4,507,588 by some of the inventors herein describes some of the prior art. It is not believed that a dual microwave plasma apparatus has been described by the prior art. Objects
It is therefore an object of the present invention to provide a UHF or microwave, plasma apparatus which produces separate dual plasmas including a hybrid plasma having improved properties for treating an article. Further it is an object of the present invention to provide
a UHF or microwave plasma apparatus for producing a hybrid plasma which is relatively simple to construct. These and other objects will become increasingly apparent by reference to the following description and the drawings. In the Drawings
Figure 1 is a front cross-sectional view of the UHF or microwave apparatus of the present invention particularly illustrating a disk plasma 16 and a separate derived hybrid plasma 45. Figure 2 is a plan cross-sectional view along line 2-2 of Figure 1. - _
Figure 3 is a front partial cross-sectional view of another embodiment of the UHF or microwave plasma apparatus showing a hybrid plasma 45a with gas conduits 49 provided for enhancing the properties of the hybrid plasma 45a. General Description
The present invention relates to an ion generating apparatus for treating a surface which comprises: a plasma source employing a radio frequency, including UHF or microwave, wave coupler or applicator which is metallic and in the shape of a hollow cavity and which is excited in one or more of its TE or TM modes of resonance and optionally including a static magnetic field surrounding the plasma source which aids in coupling electromagnetic energy to plasma electrons at electron cyclotron resonance and aids in confining the charged species in the discharge chamber, wherein the plasma is maintained at a reduced pressure in operation and wherein the ion source apparatus includes an electrically insulated chamber having a central longitudinal axis mounted in closely spaced relationship to an area of the' applicator defining an opening from the chamber; perforated means adjacent the opening which allows ions, free radicals and electrons to be removed from the plasma; gas supply means for providing a gas which is ionized to form the plasma in the insulated chamber, wherein the radio frequency wave.
including UHF and microwave, applied to the applicator creates and maintains the plasma in the shape of an elongate plasma disk perpendicular to and surrounding the central longitudinal axis in the chamber; metal plate means in the cavity mounted perpendicular to the axis; a probe means (including a conventional loop) connected to and extending inside the applicator for coupling electromagnetic energy to the applicator, wherein the plate means and the probe means in the applicator achieves the selected TE or TM mode of resonance of the radio frequency wave in the applicator; ion attracting means mounted in spaced relationship to the perforated means outside of the chamber for attachment to the surface to be treated for purposes of igniting a hybrid plasma and for attracting ions from the plasma to the surface by bias means providing a suitable voltage potential; and a platform means supporting the surface to be treated and electrically insulated from the ion attracting means, wherein the ion attracting means and platform means are spaced from the plasma in the chamber such that the hybrid plasma is formed adjacent to the ion attracting means which is separate from the elongate plasma disk. The plate means and the probe means are preferably moveable to change the mode of • resonance of the UHF or microwave applicator and to impedance match the applicator to the input transmission system.
Further the present invention relates to a method for treating a surface which comprises: providing an ion generating apparatus including a plasma source employing a radio frequency, including UHF or microwave, wave coupler or applicator, which is metallic and in the shape of a hollow cavity and which is excited in one or more of its TE or TM modes of resonance and optionally including a static magnetic field surrounding the plasma source which aids in coupling electromagnetic energy to the plasma electrons at electron cyclotron resonance and aids in confining the charged species in the discharge chamber.
wherein the plasma is maintained at a reduced pressure in operation, wherein the ion generating apparatus further includes an electrically insulated chamber having a central longitudinal axis and mounted in closely spaced relationship to an atea of the applicator defining an opening from the chamber, further includes perforated means adjacent the opening which allows the ions, free radicals and electrons to be removed from the chamber, further includes a gas supply means for providing a gas which is ionized to form the plasma in the insulated chamber, wherein the radio frequency wave (including UHF and microwave) applied to the applicator creates and then maintains the plasma in the shape of an elongate, thin plasma disk perpendicular to and surrounding the central axis in the chamber, further includes a metal plate means mounted perpendicular to the axis, further including a probe means connected to and extending inside the applicator for coupling electromagnetic energy to the applicator, wherein the plate means and the probe means in the applicator achieves a selected TE or TM mode of resonance of the radio frequency wave in the applicator and in order to match the applicator, further includes ion attracting means mounted in spaced relationship to the perforated means outside of the chamber attached to the surface to be treated foe purposes of igniting the plasma and for attracting ions from the plasma by bias means providing a suitable voltage potential and further including a platform means supporting the surface to be treated and electrically insulated from the ion attracting means wherein the ion attracting means and platform means are spaced from the plasma in the chamber such that a hybrid ion and microwave plasma is formed adjacent to the ion attracting means which is separate from the elongate plasma disk; forming the plasma disk in the chamber and the separate hybrid plasma adjacent the ion attracting means; and attracting the ions from the hybrid plasma to the
surface with the bias means having a suitable voltage potential attached to the surface.
As used herein the terms "coupler" and *v "applicator" are used interchangeably. The latter term is
5 preferred.
The microwave or UHF plasma apparatus described herein is based upon that described in earlier U.S. Patent No. 4,507,588. A microwave discharge is created in a disk shaped region which is separated from the applicator
10 (cavity) aperture (or antenna probe) by a quartz confining enclosure or disk. The applicator is in the shape of a hollow, cylindrical cavity which focuses and matches the microwave energy into the plasma region utilizing single or controlled multimode electromagnetic excitation and
15 "internal cavity" matching. The apparatus of U.S. Patent No. 4,507,588 can be used as a broad-beam ion source or as a plasma source for materials processing. U.S. patent application Serial No. 849,052 filed April 7, 1986 describes the use of magnets for confining disk plasma.
20 This apparatus can be used with the present invention. SPECIFIC DESCRIPTION
Figures 1 and 2 show the preferred improved plasma generating apparatus of the present invention. The basic construction of the apparatus is described in U.S.
25 patent No. 4,507,588. The apparatus includes cylinder 10 forming the microwave cavity 11 with a sliding short 12 for adjusting the length of the cavity 11. Brushes 13 electrically contact the cylinder 10. The probe 14 is mounted in cavity 11 by conduit 21. Radial penetration of
30 the probe 14 into the cavity 11 varies the electromagnetic mode of coupling to the plasma in the cavity 11. Sliding short or plate 12 is moved back and forth in cavity 11 on rods 22 to adjust to a specific electromagnetic mode of the -5 microwave cavity 11 using conventional adjustment means
35 such as threaded post 24 and nut 25 such as described in
U.S. Patent No. 4,507,588. Motors and gearing can be used for movement of the short 12 (not shown). The impedance
tuning within a particular mode is accomplished by iterative movements of the probe .14 perpendicular to the longitudinal axis of the cavity 11 and movement of the plate 12 along the axis. Generally the adjustments are made by threaded members on the plate 12. The probe 14 is frictionally engaged with the cavity 11 or is moved by threaded members (not shown).
A quartz dish or chamber 15 preferably shaped like a petri dish or a circular cylinder, closed on the bottom and open at the top which defines the disk shaped plasma region 16 along with base 30 and grid or screen 17 or other perforated means. A biased grid 17 must be insulated from cavity 11 when a bias is applied. The grid or screen 17 can have an electrical bias supplied by a D.C. or R.F. Voltage source 34 to attract ions from the plasma. The bias + or - removes ions or electrons from the plasma region 16. Gas is fed by tube 19 to annular ring 18 to introduce molecules of the gas which forms the plasma in region 16. Optionally a cooling line 26 is provided which cools the base 30. The cylinder 10 slides onto the base 30 and is held in place on base 30 by ring 10a secured to the cylinder 10. Sliding brushes 32 mounted on a brass ring 31 contact the cylinder 10 to provide good electrical contact. The ring 10a is held in place on base 30 by bolts 33. This construction allows the base 30 and dish 15 to be easily removed from the inside of the cylinder 10. The basic device operates without magnets as described in U.S. Patent No. 4,507,588; however, it is preferred to use magnets 20, which are shielded when in the plasma 16, around the inside or outside of region 16 to confine the plasma 16.
In the improved apparatus a holder 39 is mounted spaced from the grid or screen 17 on a pedestal 40 in space 41 defined by vacuum chamber 42. An article 43 is biased by a D.C. or R.F. voltage source 44 and hybrid plasma 45 is produced from charged and excited species 46 from the disk plasma 16. A vacuum source 47 removes gas from the space
41. The article 43 is supported on an insulator 48 and biased by source 44.
Figure 3 shows a variation of part of the apparatus of the present invention wherein gas is also fed by conduits 49 to the hybrid plasma 45a so as to treat the article 43a mounted on support 39a. The voltage source 44a biases the article 43a which is supported on an insulator 48a. This construction allows a different type of hybrid plasma 45 to be generated because of the gas from conduits 49.
The disk plasma 16 is used as .a source of ions, electrons and free radicals. These species are drawn through the perforated grid or screen 17 by the vacuum pump 47 to the region where the article 43 to be treated is located on holder 39. The grid 17 may optionally be a single grid 17 or multiple grids (not shown) which can be biased in order to select and impart energy to certain plasma species.
A bias is applied to the article 43 to be treated by voltage source 44 in order to establish the hybrid plasma 45 over the article 43. Although the two plasmas 16 and 45 are physically separated, their properties are coupled. The hybrid plasma 45 is not completely a microwave plasma. Rather it is a hybrid of a microwave and dc (or rf, depending on the bias) plasma, since it includes species from both microwave excitation and D.C. (or R.F.) excitation. Reactive gases may be added to the hybrid plasma 45a from peripheral gas conduits 49 as shown in Figure 3.
The dual plasmas offer increased flexibility in article 43 treatment. For example, it offers the combination of reactive ion etching and ion beam assisted etching. By adding reactive gases from gas conduits 49, a combination of chemically assisted ion beam etching and reactive ion etching results. Thus this apparatus and method allows new modes of operation for etching. In
addition similar combinations are possible for low temperature oxidation and deposition.
The method and apparatus of the present invention allows hybrid plasma 45 or 45a processing using species found in a microwave plasma, but without direct exposure to the microwave disk plasma. For certain uses, the lack of direct exposure of a work surface to a highly energetic selected microwave plasma may be beneficial.
Thus the microwave plasma disk 16 is used as the source of ions, free radicals and electrons. The microwave plasma disk 16 is contained in the quartz dish 15 at the end of the tuned microwave cavity 11. The cavity 11 is mounted on a continuously pumped vacuum chamber 42. The screen, grid or other perforated plate 17 terminates the microwave cavity 11. Atoms, molecules, free radicals, electrons, and ions flow from the microwave disk plasma 16, downstream toward the article 45. The bias, dc or rf, is supplied by source 44 to the article 43. Treatment of the surface of the article 43 depends on the gases used. Oxygen leads to low temperature oxidation of the surface, SiH4 or the like leads to deposition on the surface, and CF4 or the like leads to etching of the surface.
Provided the power to the microwave disk plasma 16 is sufficient (on the order of 75 watts- or higher) and provided the distance from the microwave disk plasma 16 is not too great (on the order of several cm but above about one centimeter and preferably between about 1 and 30 cm), then the hybrid plasma 45 is formed over the article 43. The hybrid plasma 45 is ignited by the applied bias from the dc or rf voltage source 44 and is contingent on the presence of the disk plasma 16. The hybrid plasma 45 incorporates and depends on the species generated by the disk plasma 16 and also generates additional ions and free radicals. This is the reason that it is a hybrid of a microwave and dc (or rf, depending on the bias) plasma, since it includes species from both. Thus the exact composition of ions or other atomic particles at article 43
σan be adjusted by controlling the input microwave power into the cavity 11 or the applied voltage from a dc or rf voltage source 44.
Biasing of the grid 17 provides the capability of selectively attracting (or repelling) both positively and negatively charged species, that is ions or groups of ions, or electrons from the plasma by appropriate choice of bias. In addition to the charged species, other species including free radicals, atoms, and molecules continue to stream to the article 45 due to the vacuum pump 47. The apparatus allows combining a directed ion beam from the disk plasma 16 with reactive ion chemical processes occurring in the hybrid plasma 45. Single grid 17 operation allows very low energy ions to be incident on the article 43. Multiple grids (not shown) can allow a more energetic stream of incident ions.
The apparatus of Figure 1 was operated in the dual plasma mode over a variety of pressure, powers, and bias levels. Low temperature oxidation in the dual plasma mode was observed using a silicon wafer as the article 43, and a dc applied bias which formed a hybrid plasma 45, approximately hemispherical in shape, over the silicon wafer.
Figure 3 shows the apparatus where reactive gases are directed into the hybrid plasma 45a by gas conduits 49 in order to enhance treatment of the article 43a. The reactive gases may be CF4 or the like, in which case etching of the article '43 occurs, or SiH4 or the like, in which case deposition occurs, or O2, in which case low temperature oxidation occurs. The potential applications include deposition, low temperature oxidation, and etching. It is intended that the foregoing description be only illustrative of the present invention and that the present invention be limited only by the hereinafter appended claims.
Claims
WE CLAIM:
-1- An ion generating apparatus for treating a surface which comprises:
(a) a plasma source employing a radio frequency, including UHF or microwave, applicator which is metallic and in the shape of a hollow cavity and which is excited in one or more of its TE or TM modes of resonance and optionally including a static magnetic field surrounding the plasma source which aids in coupling electromagnetic energy to the plasma electrons at electron cyclotron resonance and aids in confining the charged species in the discharge chamber, wherein the plasma is maintained at a reduced pressure and wherein the ion source apparatus includes an electrically insulated chamber having a central longitudinal axis mounted in closely spaced relationship to an area of the applicator defining an opening from the chamber;
(b) a perforated means adjacent the opening which allows ions, free radicals and electrons to be removed from the plasma; (c) gas supply means for providing a gas which is ionized to form the plasma in the insulated chamber, wherein the radio frequency wave applied to the applicator creates and maintains the plasma in the shape of an elongate plasma disk perpendicular to and surrounding the central longitudinal axis in the chamber;
(d) metal plate means in the cavity mounted perpendicular to the axis;
(e) probe means connected to and extending inside the applicator for coupling electromagnetic energy to the applicator, wherein the plate means and the probe means in the applicator achieves the selected TE or TM mode of resonance of the radio frequency wave in the applicator;
(f) ion attracting means mounted in spaced relationship to the perforated means outside of the chamber for attachment to the surface to be treated for purposes of
igniting a hybrid plasma and for attracting ions from the plasma to the surface by bias means providing a suitable voltage potential; and
(g) a platform means supporting the surface to be treated and electrically insulated from the ion attracting means, wherein the ion attracting means and platform means are spaced from the plasma in the chamber such that the hybrid plasma is formed adjacent to the ion attracting means which is separate from the elongate plasma disk.
-2-
The apparatus of Claim 1 wherein the platform means is mounted on a hollow tube through which a wire is inserted and electrically connected to the surface, wherein the wire provides the voltage potential.
-3- The apparatus of Claim 2 wherein the platform means is a conductive metal and wherein an insulator is provided between the platform means and the article to be treated.
-4- The apparatus of Claim 1 wherein the perforated means and the ion attracting means are separated by a distance of greater than about one centimeter.
-5- The apparatus of Claim 1 wherein the perforated means is biased to attract or repel positive or negative ions or electrons in the chamber.
-6- The apparatus of Claim 1 wherein the plate means and probe means are moveable for the purpose of selecting particular mode of resonance of the microwave or UHF applicator and for varying the mode to match the applicator.
-7-
The apparatus of Claim 1 wherein the magnets ar provided outside the insulated chamber.
-8- A method for treating a surface which comprises: (a) providing an ion generating apparatus including a plasma source employing a radio frequency, including UHF or microwave, applicator, which is metallic and in the shape of a hollow cavity and which is excited in one or more of its TE or TM modes of resonance and optionally including a static magnetic field surrounding the plasma source which aids in coupling electromagnetic energy to plasma electrons at electron cyclotron resonance and aids in confining the charged species in the discharge chamber, wherein the plasma is maintained at a reduced pressure, wherein the ion generating apparatus further includes an electrically insulated chamber having a central longitudinal axis and mounted in closely spaced relationship to an area of the applicator defining an opening from the chamber, further includes a perforated means adjacent the opening which allows the ions, free radicals and electrons to be removed from the chamber, further includes a gas supply means for providing a gas which is ionized to form the plasma in the insulated chamber, wherein the radio frequency wave applied to the applicator creates and then maintains the plasma in the shape of an elongate, thin plasma disk perpendicular to and surrounding the central axis in the chamber; further includes metal plate means mounted perpendicular to the
axis, further including a probe means connected to and extending inside the applicator for coupling the radio frequency waves to the applicator, wherein the plate means and the probe means in the applicator achieves a selected TE or TM mode of resonance of the radio frequency wave in the applicator, further includes ion attracting means mounted in spaced relationship to the perforated means outside of the chamber attached to the surface to be treated for purposes of igniting the plasma and for attracting ions from the plasma by bias means providing a suitable voltage potential and further including a platform means supporting the surface to be treated and electrically insulated from the ion attracting means wherein the ion attracting means and platform means are spaced from the plasma in the chamber such that a hybrid ion and microwave plasma is formed adjacent to the ion attracting means which is separate from the elongate plasma disk;
(b) forming the plasma disk in the chamber and the separate hybrid plasma adjacent the ion attracting means; and
(c) attracting the ions from the hybrid plasma to the surface with the bias means having a suitable voltage potential attached to the surface.
-9- The method of Claim 8 wherein the bias means is a wire and circuit biasing the surface to be treated with a voltage which attracts or repels the ions.
-10- The method of Claim 9 wherein the platform means is mounted on a hollow tube through which a wire is inserted and electrically connected to the surface, wherein the wire provides the voltage potential.
-11- The method of Claim 10 wherein the platform means is a conductive metal and wherein an insulator is provided between the platform means and the article to be treated.
-12- The method of Claim 8 wherein the perforated means and the ion attracting means are separated by a distance of greater than about one centimeter.
-13- The method of Claim 8 wherein the perforated means is biased to attract or repel positive or negative ions in the chamber.
-14- The method of Claim 8 wherein the plate means and probe means are moveable and the mode of the microwave or UHF applicator is varied with the plate means and probe means.
-15- The method of Claim 8 wherein magnets are provided outside the insulated chamber.
-16- The apparatus of Claim 1 wherein the bias means is selected from D.C. and R.F.
-17- The method of Claim 8 wherein the bias means is selected from D.C. and R.F.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE198787904753T DE270667T1 (en) | 1986-06-12 | 1987-06-10 | DOUBLE PLASMA MICROWAVE DEVICE AND SURFACE PROCESSING METHOD. |
DE8787904753T DE3776106D1 (en) | 1986-06-12 | 1987-06-10 | DOUBLE PLASMA MICROWAVE DEVICE AND SURFACE PROCESSING METHOD. |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US873,694 | 1986-06-12 | ||
US06/873,694 US4691662A (en) | 1983-02-28 | 1986-06-12 | Dual plasma microwave apparatus and method for treating a surface |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1987007760A1 true WO1987007760A1 (en) | 1987-12-17 |
Family
ID=25362148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1987/001427 WO1987007760A1 (en) | 1986-06-12 | 1987-06-10 | Dual plasma microwave apparatus and method for treating a surface |
Country Status (5)
Country | Link |
---|---|
US (1) | US4691662A (en) |
EP (1) | EP0270667B1 (en) |
CA (1) | CA1311214C (en) |
DE (2) | DE270667T1 (en) |
WO (1) | WO1987007760A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0315986A1 (en) | 1987-11-11 | 1989-05-17 | Technics Plasma Gmbh | Filamentless magnetron ion source and its utilization process |
EP0343602A2 (en) * | 1988-05-25 | 1989-11-29 | Canon Kabushiki Kaisha | Microwave plasma treating apparatus |
EP0388800A2 (en) * | 1989-03-23 | 1990-09-26 | The Board Of Trustees Of The Michigan State University | Plasma reactor apparatus and method for treating a substrate |
EP0391156A2 (en) * | 1989-04-03 | 1990-10-10 | The Board Of Trustees Of The Michigan State University | Improved coaxial cavity type, radiofrequency wave, plasma generating apparatus |
FR2646557A1 (en) * | 1989-04-28 | 1990-11-02 | Canon Kk | PROCESS FOR FORMING A POLYCRYSTALLINE SEMICONDUCTOR FILM ON AN INSULATING SUBSTRATE |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06101307B2 (en) * | 1987-01-16 | 1994-12-12 | 松下電器産業株式会社 | Metal ion source |
KR880013424A (en) * | 1987-04-08 | 1988-11-30 | 미타 가츠시게 | Plasma device |
JPH01198478A (en) * | 1988-02-01 | 1989-08-10 | Canon Inc | Microwave plasma cvd device |
DE3803355A1 (en) * | 1988-02-05 | 1989-08-17 | Leybold Ag | PARTICLE SOURCE FOR A REACTIVE ION BEAM OR PLASMA POSITIONING PLANT |
DE3903322A1 (en) * | 1989-02-04 | 1990-08-16 | Nmi Naturwissenschaftl U Mediz | Method for producing ions |
DE3942964A1 (en) * | 1989-12-23 | 1991-06-27 | Leybold Ag | DEVICE FOR PRODUCING A PLASMA |
CA2050091C (en) * | 1990-10-03 | 1999-06-15 | Richard C. Eden | Electronic circuit and method with thermal management |
US5310512A (en) * | 1990-11-15 | 1994-05-10 | Norton Company | Method for producing synthetic diamond structures |
CA2054050C (en) * | 1990-11-16 | 1998-07-07 | Louis K. Bigelow | Method and apparatus for making grit and abrasive media |
WO1992019785A1 (en) * | 1991-04-29 | 1992-11-12 | Nauchno-Proizvodstvennoe Predpriyatie 'novatekh' | Method and device for treatment of articles in gas-discharge plasma |
US5204144A (en) * | 1991-05-10 | 1993-04-20 | Celestech, Inc. | Method for plasma deposition on apertured substrates |
US5342660A (en) * | 1991-05-10 | 1994-08-30 | Celestech, Inc. | Method for plasma jet deposition |
JPH0521393A (en) * | 1991-07-11 | 1993-01-29 | Sony Corp | Plasma processor |
US5279669A (en) * | 1991-12-13 | 1994-01-18 | International Business Machines Corporation | Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions |
US5397428A (en) * | 1991-12-20 | 1995-03-14 | The University Of North Carolina At Chapel Hill | Nucleation enhancement for chemical vapor deposition of diamond |
US5213248A (en) * | 1992-01-10 | 1993-05-25 | Norton Company | Bonding tool and its fabrication |
US5361016A (en) * | 1992-03-26 | 1994-11-01 | General Atomics | High density plasma formation using whistler mode excitation in a reduced cross-sectional area formation tube |
US5225740A (en) * | 1992-03-26 | 1993-07-06 | General Atomics | Method and apparatus for producing high density plasma using whistler mode excitation |
US5311103A (en) * | 1992-06-01 | 1994-05-10 | Board Of Trustees Operating Michigan State University | Apparatus for the coating of material on a substrate using a microwave or UHF plasma |
US5292370A (en) * | 1992-08-14 | 1994-03-08 | Martin Marietta Energy Systems, Inc. | Coupled microwave ECR and radio-frequency plasma source for plasma processing |
US5273587A (en) * | 1992-09-04 | 1993-12-28 | United Solar Systems Corporation | Igniter for microwave energized plasma processing apparatus |
US5470423A (en) * | 1994-01-25 | 1995-11-28 | Board Of Trustees Operating Michigan State University | Microwave pultrusion apparatus and method of use |
US5628829A (en) * | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
US5551983A (en) * | 1994-11-01 | 1996-09-03 | Celestech, Inc. | Method and apparatus for depositing a substance with temperature control |
US5679404A (en) * | 1995-06-07 | 1997-10-21 | Saint-Gobain/Norton Industrial Ceramics Corporation | Method for depositing a substance with temperature control |
US6077787A (en) * | 1995-09-25 | 2000-06-20 | Board Of Trustees Operating Michigan State University | Method for radiofrequency wave etching |
US6173672B1 (en) | 1997-06-06 | 2001-01-16 | Celestech, Inc. | Diamond film deposition on substrate arrays |
US6406760B1 (en) | 1996-06-10 | 2002-06-18 | Celestech, Inc. | Diamond film deposition on substrate arrays |
AU3145197A (en) | 1996-06-28 | 1998-01-21 | Lam Research Corporation | Apparatus and method for high density plasma chemical vapor deposition |
US6013155A (en) * | 1996-06-28 | 2000-01-11 | Lam Research Corporation | Gas injection system for plasma processing |
US6184158B1 (en) | 1996-12-23 | 2001-02-06 | Lam Research Corporation | Inductively coupled plasma CVD |
US6461982B2 (en) * | 1997-02-27 | 2002-10-08 | Micron Technology, Inc. | Methods for forming a dielectric film |
US6042687A (en) * | 1997-06-30 | 2000-03-28 | Lam Research Corporation | Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing |
US6057645A (en) * | 1997-12-31 | 2000-05-02 | Eaton Corporation | Plasma discharge device with dynamic tuning by a movable microwave trap |
US6203657B1 (en) | 1998-03-31 | 2001-03-20 | Lam Research Corporation | Inductively coupled plasma downstream strip module |
US6230651B1 (en) * | 1998-12-30 | 2001-05-15 | Lam Research Corporation | Gas injection system for plasma processing |
US6943392B2 (en) * | 1999-08-30 | 2005-09-13 | Micron Technology, Inc. | Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen |
DE10024699A1 (en) * | 2000-05-18 | 2001-11-29 | Bosch Gmbh Robert | Plasma etching system |
US6558517B2 (en) * | 2000-05-26 | 2003-05-06 | Micron Technology, Inc. | Physical vapor deposition methods |
TW511398B (en) * | 2000-09-12 | 2002-11-21 | Tokyo Electron Ltd | Apparatus and method to control the uniformity of plasma by reducing radial loss |
US6833710B2 (en) * | 2000-10-27 | 2004-12-21 | Axcelis Technologies, Inc. | Probe assembly for detecting an ion in a plasma generated in an ion source |
US6566147B2 (en) * | 2001-02-02 | 2003-05-20 | Micron Technology, Inc. | Method for controlling deposition of dielectric films |
US20030017266A1 (en) * | 2001-07-13 | 2003-01-23 | Cem Basceri | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer |
US6838122B2 (en) * | 2001-07-13 | 2005-01-04 | Micron Technology, Inc. | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers |
US7011978B2 (en) * | 2001-08-17 | 2006-03-14 | Micron Technology, Inc. | Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions |
US20030070620A1 (en) * | 2001-10-15 | 2003-04-17 | Cooperberg David J. | Tunable multi-zone gas injection system |
US6955177B1 (en) * | 2001-12-07 | 2005-10-18 | Novellus Systems, Inc. | Methods for post polysilicon etch photoresist and polymer removal with minimal gate oxide loss |
JP4252749B2 (en) * | 2001-12-13 | 2009-04-08 | 忠弘 大見 | Substrate processing method and substrate processing apparatus |
JP4109468B2 (en) * | 2002-03-05 | 2008-07-02 | 住友ゴム工業株式会社 | Radial tires for motorcycles |
US7170027B2 (en) * | 2003-04-16 | 2007-01-30 | Toyo Seikan Kaisha Ltd. | Microwave plasma processing method |
US7138187B2 (en) * | 2004-03-19 | 2006-11-21 | Younger Mfg. Co. | Polyvinyl alcohol-based film exhibiting improved adhesion |
US8350236B2 (en) * | 2010-01-12 | 2013-01-08 | Axcelis Technologies, Inc. | Aromatic molecular carbon implantation processes |
US9048190B2 (en) * | 2012-10-09 | 2015-06-02 | Applied Materials, Inc. | Methods and apparatus for processing substrates using an ion shield |
TWI546858B (en) * | 2014-04-17 | 2016-08-21 | 紫焰科技股份有限公司 | Noncontact physical etching system and method thereof |
ES2696227B2 (en) * | 2018-07-10 | 2019-06-12 | Centro De Investig Energeticas Medioambientales Y Tecnologicas Ciemat | INTERNAL ION SOURCE FOR LOW EROSION CYCLONES |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4316090A (en) * | 1979-06-04 | 1982-02-16 | Hitachi, Ltd. | Microwave plasma ion source |
US4426582A (en) * | 1980-01-21 | 1984-01-17 | Oregon Graduate Center | Charged particle beam apparatus and method utilizing liquid metal field ionization source and asymmetric three element lens system |
US4481062A (en) * | 1982-09-02 | 1984-11-06 | Kaufman Harold R | Electron bombardment ion sources |
US4587430A (en) * | 1983-02-10 | 1986-05-06 | Mission Research Corporation | Ion implantation source and device |
US4598231A (en) * | 1982-11-25 | 1986-07-01 | Nissin-High Voltage Co. Ltd. | Microwave ion source |
US4630566A (en) * | 1984-08-16 | 1986-12-23 | Board Of Trustees Operating Michigan State University | Microwave or UHF plasma improved apparatus |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4512867A (en) * | 1981-11-24 | 1985-04-23 | Andreev Anatoly A | Method and apparatus for controlling plasma generation in vapor deposition |
US4511593A (en) * | 1983-01-17 | 1985-04-16 | Multi-Arc Vacuum Systems Inc. | Vapor deposition apparatus and method |
US4585668A (en) * | 1983-02-28 | 1986-04-29 | Michigan State University | Method for treating a surface with a microwave or UHF plasma and improved apparatus |
US4507588A (en) * | 1983-02-28 | 1985-03-26 | Board Of Trustees Operating Michigan State University | Ion generating apparatus and method for the use thereof |
US4514437A (en) * | 1984-05-02 | 1985-04-30 | Energy Conversion Devices, Inc. | Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition |
US4581100A (en) * | 1984-10-29 | 1986-04-08 | International Business Machines Corporation | Mixed excitation plasma etching system |
JPS61136229A (en) * | 1984-12-06 | 1986-06-24 | Toshiba Corp | Dry etching device |
-
1986
- 1986-06-12 US US06/873,694 patent/US4691662A/en not_active Expired - Lifetime
-
1987
- 1987-06-09 CA CA000539246A patent/CA1311214C/en not_active Expired - Fee Related
- 1987-06-10 WO PCT/US1987/001427 patent/WO1987007760A1/en active IP Right Grant
- 1987-06-10 DE DE198787904753T patent/DE270667T1/en active Pending
- 1987-06-10 EP EP87904753A patent/EP0270667B1/en not_active Expired - Lifetime
- 1987-06-10 DE DE8787904753T patent/DE3776106D1/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4316090A (en) * | 1979-06-04 | 1982-02-16 | Hitachi, Ltd. | Microwave plasma ion source |
US4426582A (en) * | 1980-01-21 | 1984-01-17 | Oregon Graduate Center | Charged particle beam apparatus and method utilizing liquid metal field ionization source and asymmetric three element lens system |
US4481062A (en) * | 1982-09-02 | 1984-11-06 | Kaufman Harold R | Electron bombardment ion sources |
US4598231A (en) * | 1982-11-25 | 1986-07-01 | Nissin-High Voltage Co. Ltd. | Microwave ion source |
US4587430A (en) * | 1983-02-10 | 1986-05-06 | Mission Research Corporation | Ion implantation source and device |
US4630566A (en) * | 1984-08-16 | 1986-12-23 | Board Of Trustees Operating Michigan State University | Microwave or UHF plasma improved apparatus |
Non-Patent Citations (1)
Title |
---|
See also references of EP0270667A4 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0315986A1 (en) | 1987-11-11 | 1989-05-17 | Technics Plasma Gmbh | Filamentless magnetron ion source and its utilization process |
EP0343602A2 (en) * | 1988-05-25 | 1989-11-29 | Canon Kabushiki Kaisha | Microwave plasma treating apparatus |
EP0343602A3 (en) * | 1988-05-25 | 1991-01-09 | Canon Kabushiki Kaisha | Microwave plasma treating apparatus |
EP0388800A2 (en) * | 1989-03-23 | 1990-09-26 | The Board Of Trustees Of The Michigan State University | Plasma reactor apparatus and method for treating a substrate |
EP0388800A3 (en) * | 1989-03-23 | 1991-07-03 | The Board Of Trustees Of The Michigan State University | Plasma reactor apparatus and method for treating a substrate |
EP0391156A2 (en) * | 1989-04-03 | 1990-10-10 | The Board Of Trustees Of The Michigan State University | Improved coaxial cavity type, radiofrequency wave, plasma generating apparatus |
EP0391156A3 (en) * | 1989-04-03 | 1991-10-16 | The Board Of Trustees Of The Michigan State University | Improved coaxial cavity type, radiofrequency wave, plasma generating apparatus |
FR2646557A1 (en) * | 1989-04-28 | 1990-11-02 | Canon Kk | PROCESS FOR FORMING A POLYCRYSTALLINE SEMICONDUCTOR FILM ON AN INSULATING SUBSTRATE |
Also Published As
Publication number | Publication date |
---|---|
EP0270667B1 (en) | 1992-01-15 |
DE3776106D1 (en) | 1992-02-27 |
EP0270667A1 (en) | 1988-06-15 |
EP0270667A4 (en) | 1988-09-28 |
DE270667T1 (en) | 1988-11-03 |
CA1311214C (en) | 1992-12-08 |
US4691662A (en) | 1987-09-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4691662A (en) | Dual plasma microwave apparatus and method for treating a surface | |
US5292370A (en) | Coupled microwave ECR and radio-frequency plasma source for plasma processing | |
US4727293A (en) | Plasma generating apparatus using magnets and method | |
US4992665A (en) | Filamentless magnetron-ion source and a process using it | |
US4585668A (en) | Method for treating a surface with a microwave or UHF plasma and improved apparatus | |
US5686796A (en) | Ion implantation helicon plasma source with magnetic dipoles | |
US5767628A (en) | Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel | |
US5277751A (en) | Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window | |
US4630566A (en) | Microwave or UHF plasma improved apparatus | |
US5081398A (en) | Resonant radio frequency wave coupler apparatus using higher modes | |
US5868897A (en) | Device and method for processing a plasma to alter the surface of a substrate using neutrals | |
US4906900A (en) | Coaxial cavity type, radiofrequency wave, plasma generating apparatus | |
US5032205A (en) | Plasma etching apparatus with surface magnetic fields | |
JPH10261621A (en) | Plasma treatment equipment | |
US5707452A (en) | Coaxial microwave applicator for an electron cyclotron resonance plasma source | |
US20070026161A1 (en) | Magnetic mirror plasma source and method using same | |
KR970058391A (en) | Plasma processing equipment | |
JP2005514762A (en) | Method and apparatus comprising a magnetic filter for plasma processing a workpiece | |
JPH06267903A (en) | Plasma device | |
JP2004047207A (en) | Method and device of generating ground wave excitation plasma at conductor proximity area | |
US5736818A (en) | Resonant radiofrequency wave plasma generating apparatus with improved stage | |
RU2106716C1 (en) | Plant for microwave vacuum-plasma treatment of condensed media | |
JPH0790632A (en) | Electric discharge plasma treating device | |
JPH10177994A (en) | Device and method for plasma treatment | |
JP2920852B2 (en) | Microwave plasma device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): JP |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH DE FR GB IT LU NL SE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1987904753 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1987904753 Country of ref document: EP |
|
WWG | Wipo information: grant in national office |
Ref document number: 1987904753 Country of ref document: EP |