|Publication number||USRE39824 E1|
|Application number||US 10/062,088|
|Publication date||11 Sep 2007|
|Filing date||1 Feb 2002|
|Priority date||29 Aug 1990|
|Also published as||USRE39775, USRE39776, USRE39823|
|Publication number||062088, 10062088, US RE39824 E1, US RE39824E1, US-E1-RE39824, USRE39824 E1, USRE39824E1|
|Inventors||Shigekazu Kato, Kouji Nishihata, Tsuenhiko Tsubone, Atsushi Itou|
|Original Assignee||Hitachi, Ltd.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (94), Non-Patent Citations (64), Classifications (19), Legal Events (4)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is a Continuation application of application Ser. No. 09/552,572, filed Apr. 19, 2000, which is a Divisional application of application Ser. No. 09/461,432, filed Dec. 16, 1999 now abandoned now U.S. Pat. No. 6,330,755, which is a Continuation application of application Ser. No. 09/177,495, filed Oct. 23, 1998 now U.S. Pat. No. 6,012,235, which is a Continuation application of application Ser. No. 09/061,062, filed Apr. 16, 1998 now U.S. Pat. No. 5,950,330, which is a Continuation application of application Ser. No. 08/882,731, filed Jun. 26, 1997 now U.S. Pat. No. 5,784,799, which is a Divisional application of application Ser. No. 08/593,870, filed Jan. 30, 1996 now U.S. Pat. No. 5,661,913, which is a Continuing application of application Ser. No. 08/443,039, filed May 17, 1995 now U.S. Pat. No. 5,553,396, which is a Divisional application of application Ser. No. 08/302,443, filed Sep. 9, 1994 now U.S. Pat. No. 5,457,896 which is a Continuing application of application Ser. No. 08/096,256, filed Jul. 26, 1993 now U.S. Pat. No. 5,349,762, which is a Continuing application of application Ser. No. 07/751,951, filed Aug. 29, 1991 now U.S. Pat. No. 5,314,509.
1. Field of the Invention
This invention relates to a vacuum processing apparatus and operating method therefor. More specifically, the present invention relates to a vacuum processing apparatus having vacuum processing chambers the inside of which must be cleaned, and its operating method.
2. Description of the Prior Art
In a vacuum processing apparatus such as a dry etching apparatus, a CVD apparatus or a sputtering apparatus, a predetermined number of substrates to be treated are stored as one unit (which is generally referred to as a “lot”) in a substrate cassette and are loaded in the apparatus. The substrates after being processed are likewise stored in the same unit in the substrate cassette and are recovered. This is an ordinary method of operating these apparatuses to improve the productivity.
In such a vacuum processing apparatus described above, particularly in an apparatus which utilizes a reaction by an active gas, as typified by a dry etching apparatus and a CVD apparatus, reaction products adhere to and are deposited on a vacuum processing chamber with the progress of processing. For this reason, problems such as degradation of vacuum performance, the increase of dust, the drop of the levels of optical monitoring signals occur. To solve these problems, conventionally the insides of the vacuum processing chambers are cleaned periodically. Cleaning operations include so-called “wet cleaning” which is wiping-off of the adhering matters by use of an organic solvent, etc., and so-called “dry cleaning” in which an active gas or plasma is used for decomposing adhering matters. Dry cleaning is superior from the aspect of the working factor and efficiency. These features of the dry cleaning have become essential with the progress in automation of production lines.
An example of vacuum processing apparatuses having such a dry cleaning function is disclosed in Japanese Utility Model Laid-Open No. 127125/1988. This apparatus includes a preliminary vacuum chamber for introducing wafers to be treated into a processing chamber from an atmospheric side to a vacuum side, which is disposed adjacent to the processing chamber through a gate valve, dummy wafers are loaded in the preliminary vacuum chamber and are transferred into the processing chamber by exclusive conveyor means before the processing chamber is subjected to dry cleaning, and the dummy wafer is returned to the vacuum preparatory chamber by the conveyor means after dry cleaning is completed.
In the prior art technology described above, the structure of the vacuum processing apparatus is not much considered. The preliminary vacuum chamber for storing the dummy wafers must have a large capacity, the exclusive conveyor means is necessary for transferring the dummy wafers and thus, the apparatus is complicated in structure.
Dummy wafers used for plasma cleaning are again returned to the preliminary vacuum chamber and are made to stand by. In this instance, reaction products generated during plasma cleaning and residual gas used for plasma cleaning adhere on the used dummy wafers. Thereafter, normal processing for wafers is resumed. Therefore, the used dummy wafers and unprocessed wafers exist in mixture inside the preliminary vacuum chamber and this state is not desirable from the aspect of contamination of unprocessed wafers.
The present invention provides a vacuum processing apparatus which solves the problems described above, is simple in structure, prevents contamination of unprocessed substrates and accomplishes a high production yield. A vacuum processing apparatus having vacuum processing chambers the insides of which are dry-cleaned after substrates to be treated are processed in vacuum is provided with first storage means for storing substrates to be treated, second storage means for storing dummy substrates, the first and second storage means being disposed in the air, conveyor means for transferring the substrates to be processed between the first storage means and the vacuum processing chambers and for transferring the dummy substrates between the second storage means and the vacuum processing chambers, and control means for controlling the conveyor means so as to transfer the dummy substrates between the second storage means and the vacuum processing chambers before and after dry cleaning of the vacuum processing chambers. A method of operating a vacuum processing apparatus having vacuum processing chambers the insides of which are dry-cleaned after substrates to be processed are processed in vacuum comprises the steps of disposing first storage means for storing the substrates to be processed together with second storage means for storing dummy substrates in the air atmosphere, transferring the substrates to be processed between the first storage means and the vacuum processing chambers and vacuum-processing the substrates to be processed, and transferring the dummy substrates between the second storage means and the vacuum processing chambers before and after dry-cleaning of the vacuum processing chambers.
As substrates to be processed are processed in a vacuum processing apparatus, reaction products adhere to and are deposited in vacuum processing chambers. The reaction products adhering to and deposited in the vacuum processing chambers are removed by disposing dummy wafers inside the vacuum processing chambers and by conducting dry-cleaning. To carry out dry cleaning, the timings of dry cleaning of the vacuum processing chambers are determined and during or after the processing of a predetermined number of substrates to be processed, dummy substrates are conveyed by substrate conveyor means from dummy substrate storage means disposed in the air atmosphere together with processed substrate storage means, and are then disposed inside the vacuum processing chambers. After the dummy substrates are thus disposed, a plasma is generated inside each of the vacuum processing chambers to execute dry-cleaning inside the vacuum processing chamber. After dry-cleaning inside the vacuum processing chambers is completed, the dummy substrates are returned from the vacuum processing chambers to the dummy substrate storage means by the substrate conveyor means. In this manner, a preliminary vacuum chamber and an exclusive transfer mechanism both necessary in prior art techniques become unnecessary, and the apparatus structure gets simplified. The dummy substrates used for the dry-cleaning and the substrates to be processed do not co-exist inside the same chamber, so that contamination of substrates to be processed due to dust and remaining gas is prevented and a high production yield can be achieved.
Hereinafter, an embodiment of the present invention will be explained with reference to
Cassette tables 2a to 2c are disposed in an L-shape in this case in positions such that they can be loaded into and unloaded from the apparatus without changing their positions and postures. In other words, the cassettes 1a to 1c are fixed always in predetermined positions on a substantially horizontal plane, while the cassette tables 2a and 2b are disposed adjacent to and in parallel with each other on one of the sides of the L-shape. The cassette table 2c is disposed on the other side of the L-shape. The cassettes 1a and 1b are for storing unprocessed wafers and for recovering the processed wafers. They can store a plurality (usually 25) of wafers 20 as the substrates to be treated. The cassette 1c in this case is for storing the dummy wafers for effecting dry-cleaning using plasma (hereinafter referred to as “plasma-cleaning”) and recovering the dummy wafers after plasma-cleaning. It can store a plurality of (usually twenty-five pieces) dummy wafers 30.
A load lock chamber 5 and unload lock chamber 6 are so disposed as to face the cassette tables 2a and 2b, and a conveyor 13 is disposed between the cassette tables 2a, 2b and the load lock chamber 5 and the unload lock chamber 6. The load lock chamber 5 is equipped with an evacuating device 3 and a gas introduction device 4, and can load unprocessed wafers in the vacuum apparatus through a gate valve 12a. The unload lock chamber 6 is similarly equipped with the evacuating device 3 and the gas introduction device 4, and can take out processed wafers to the atmosphere through a gate valve 12d. The conveyor 13 is equipped with a robot having X, Y, Z and θ axes, which operates so as to deliver and receive the wafers 20 between the cassettes 1a, 1b and the load lock and unload lock chambers 5 and 6 and the dummy wafers 30 between the cassette 1c and the load lock and unload lock chambers 5 and 6.
The load lock chamber 5 and the unload lock chamber 6 are connected to a transfer chamber 16 through the gate valves 12b and 12c. The transfer chamber 16 is rectangular, in this case, and etching chambers 11a, 11b and 11c are disposed on the three side walls of the transfer chamber 16 through gate valves 15a, 15b and 15c, respectively. A conveyor 14 capable of delivering the wafers 20 or the dummy wafers 30 from the load lock chamber 5 to the etching chambers 11a, 11b, 11c and of delivering them from the chambers 11a, 11b, 11c to the unload lock chamber 6 is disposed inside the transfer chamber 16. The transfer chamber 16 is equipped with an evacuating device 17 capable of independent evacuation.
The etching chambers 11a, 11b, 11c have the same structure and can make the same processing. The explanation will be given on the etching chamber 11 by way of example. The etching chamber 11b has a sample table 8b for placing the wafers 20 thereon, and a discharge chamber is so provided as to define a discharge portion 7b above the sample table 8b. The etching chamber 11b includes a gas introduction device 10b for introducing a processing gas in the discharge portion 7b and an evacuating device 9b for decreasing the internal pressure of the etching chamber 11b to a predetermined pressure. The etching chamber 11b further includes generation means for generating a microwave and a magnetic field for converting processing gas in the discharge portion 7b to plasma.
A sensor 18 for measuring the intensity of plasma light is disposed at an upper part of the etching chamber. The measured value of the sensor 13 is inputted to a controller 19. The controller 19 compares the measured value from the sensor 18 with a predetermined one and determines the timing of cleaning inside the etching chamber. The controller 19 controls the conveyors 13 and 14 to control the transfer of the dummy wafers 30 between the cassette 1c and the etching chambers 11a to 11c.
In a vacuum processing apparatus having the construction described above, the cassettes 1a, 1b storing unprocessed wafers are first placed onto the cassette tables 2a, 2b by a line transfer robot which operates on the basis of the data sent from a host control apparatus, or by an operator. On the other hand, the cassette 1c storing the dummy wafers is placed on the cassette table 2c. The vacuum processing apparatus executes the wafer processing or plasma cleaning on the basis of recognition by itself of the production-data provided on the cassettes 1a to 1c, of the data sent from the host control apparatus, or of the command inputted by an operator.
For instance, the wafers 20 are sequentially loaded in the order from above into the etching chambers 11a, 11b, 11c by the conveyors 13 and 14, and are etched. The etched wafers are stored in their original positions inside the cassette 1a by the conveyors 14 and 13. In this case, from the start to the end of the operation, without changing the position and posture of the cassettes, the unprocessed wafers are taken out from the cassettes and are returned in their original positions where the wafers have been stored, and are stored there. In this manner, the apparatus can easily cope with automation of the production line, contamination of the wafers due to dust can be reduced and high production efficiency and high production yield can thus be accomplished.
As etching is repeated, the reaction products adhere to and are deposited on the inner wall of the etching chambers 11a to 11c. Therefore, the original state must be recovered by removing the adhering matters by plasma cleaning. The controller 19 judges the timing of this plasma cleaning. In this case, a portion through which the plasma light passes is provided in each of the etching chambers 11a to 11c. The sensor 18 measures the intensity of the plasma light passing through this portion and when the measured value reaches a predetermined one, the start timing of plasma cleaning is judged. Alternatively, the timing of plasma cleaning may be judged by counting the number of wafers processed in each etching chamber by the controller 19 and judging the timing when this value reaches a predetermined value. The actual timing of plasma cleaning that is carried out may be during a processing of a predetermined number of wafers in the cassette 1a or 1b, after the processing of all the wafers 20 in a cassette is completed and before the processing or wafers in the next cassette.
Plasma cleaning is carried out in the following sequence. In this case, the explanation will be given about a case where the etching chambers 11a to 11c are subjected to plasma cleaning by using three dummy wafers 30 among the dummy wafers 30 (twenty-five dummy wafers are stored in this case) stored in the cassette 1c.
Dummy wafers 30 which are stored in the cassette 1c and are not used yet or can be used because the number of times of use for plasma cleaning is below a predetermined one are drawn by the conveyor 13. At this time, dummy wafers 30 stored in any position in the cassette 1c may be used but in this case, the position numbers of the dummy wafers in the cassette and their number of times of use are stored in the controller 19, and accordingly dummy wafers having smaller numbers of times of use are drawn preferentially. Then, the dummy wafers 30 are loaded in the load lock chamber 5 disposed on the opposite side to the cassette 1a by the conveyor 13 through the gate valve 12a in the same way as the transfer at the time of etching of wafers 20. After the gate valve 12a is closed, the load lock chamber 5 is evacuated to a predetermined pressure by the vacuum exhaust device 3 and then the gate valves 12b and 15a are opened. The dummy wafers 30 are transferred by the conveyor 14 from the load lock chamber 5 to the etching chamber 11a through the transfer chamber 16 and are placed on the sample table 8a. After the gate valve 15a is closed, plasma cleaning is carried out in the etching chamber 11a in which the dummy wafers 30 are disposed, under a predetermined condition.
In the interim, the gate valves 12a, 12b are closed and the pressure of the load lock chamber 5 is returned to the atmospheric pressure by the gas introduction device 4. Next, the gate valve 12a is opened and the second dummy wafer 30 is loaded in the load lock chamber 5 by the conveyor 13 in the same way as the first dummy wafer 30, and evacuation is effected again by the evacuating device 3 to a predetermined pressure after closing the gate valve 12a. Thereafter, the gate valves 12b and 15b are opened and the second dummy wafer 30 is transferred from the load lock chamber 5 to the etching chamber 11b through the transfer chamber 16 by the conveyor 14. Plasma cleaning is started after the gate valve 15b is closed.
In the interim, the third dummy wafer 30 is transferred into the etching chamber 11c in the same way as the second dummy wafer 30 and plasma cleaning is carried out.
After plasma cleaning is completed in the etching chamber 11a in which the first dummy wafer 20 is placed, the gate valves 15a and 12c are opened. The used dummy wafer 30 is transferred from the etching chamber 11a to the unload lock chamber 6 by the conveyor 14. Then, the gate valve 12c is closed. After the pressure of the unload lock chamber 6 is returned to the atmospheric pressure by the gas introduction device 4, the gate valve 12d is opened. The used dummy wafer 30 transferred to the unload lock chamber 6 is taken out in the air by the conveyor 13 through the gate valve 12d and is returned to its original position in the cassette 1c in which it is stored at the start.
When plasma cleaning of the etching chambers 11b and 11c is completed, the second and third dummy wafers 20 are returned to their original positions in the cassette 1c.
In this way, the used dummy wafers 30 are returned to their original positions in the cassette 1c and the dummy wafers 30 are always stocked in the cassette 1c. When all the dummy wafers 30 in the cassette 1c are used for plasma cleaning or when the numbers of times of use of the wafers 30 reach the predetermined ones after the repetition of use, the dummy wafers 30 are replaced as a whole together with the cassette 1c. The timing of this replacement of the cassette is managed by the controller 19 and the replacement is instructed to the host control apparatus for controlling the line transfer robot or to the operator.
Although the explanation given above deals with the case where the etching chambers 11a to 11c are continuously plasma-cleaned by the use of three dummy wafers 30 among the dummy wafers 30 in the cassette 1c, other processing methods may be employed, as well.
For example, the etching chambers 11a to 11c are sequentially plasma-cleaned by the use of one dummy wafer 30. In the case of such plasma cleaning, unprocessed wafers 20 can be etched in etching chambers other than the one subjected to plasma cleaning, and plasma cleaning can thus be carried out without interrupting etching.
If the processing chambers are different, for example, there are an etching chamber, a post-processing chamber and a film-formation chamber, and wafers are sequentially processed while passing through each of these processing chambers, each of the processing chambers can be subjected appropriately to plasma cleaning by sending dummy wafers 30 during the processing of the wafers 20 which are stored in the cassette 1a or 2a and drawn and sent sequentially, by passing merely the dummy wafers 30 through the processing chambers for which plasma cleaning is not necessary, and by executing plasma cleaning only when the dummy wafers 30 reach the processing chambers which need plasma cleaning.
According to the embodiment described above, the cassette storing the dummy wafers and the cassettes storing the wafers to be processed are disposed together in the air, the dummy wafers are loaded from the cassette into the apparatus by the same conveyor as the conveyor for transferring the wafers, at the time of cleaning, and the used dummy wafers are returned to their original positions in the cassette. In this way, a mechanism for conducting exclusively plasma cleaning need not be provided, and the construction of the apparatus can be simplified. It is not necessary to handle plasma cleaning as a particular processing sequence, but the plasma cleaning can be incorporated in an ordinary etching processing and can be carried out efficiently in a series of operations.
The dummy wafers used for plasma cleaning are returned to their original positions in the cassette placed in the air. Accordingly, the used dummy wafers and the wafers before and after processing do not exist mixedly in the vacuum chamber, so that contamination of wafers due to dust and remaining gas does not occur unlike conventional apparatuses.
The used dummy wafers are returned to their original positions in the cassette and the numbers of times of their use is managed. Accordingly, it is possible to prevent the confusion of the used dummy wafers with the unused dummy wafers and the confusion of the dummy wafers having small numbers of times of use with the dummy wafers having large numbers of times of use. For these reasons, the dummy wafers can be used effectively without any problem when plasma cleaning is carried out.
Furthermore, in accordance with the present invention, the apparatus can have a plurality of processing chambers and can transfer wafers and dummy wafers by the same conveyor. Since plasma cleaning can be carried out by managing the timing of cleaning of each processing chamber by the controller, the cleaning cycle can be set arbitrarily, dry cleaning can be carried out without interrupting the flow of the processing, the processing can be efficiently made and the productivity can be improved.
As described above, according to the present invention, there are effects that the construction of the apparatus is simple, the substrates to be processed are free from contamination and the production yield is high.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US3652444 *||24 Oct 1969||28 Mar 1972||Ibm||Continuous vacuum process apparatus|
|US3981791 *||10 Mar 1975||21 Sep 1976||Signetics Corporation||Vacuum sputtering apparatus|
|US4138306 *||29 Aug 1977||6 Feb 1979||Tokyo Shibaura Electric Co., Ltd.||Apparatus for the treatment of semiconductors|
|US4226897 *||5 Dec 1977||7 Oct 1980||Plasma Physics Corporation||Method of forming semiconducting materials and barriers|
|US4311427 *||21 Dec 1979||19 Jan 1982||Varian Associates, Inc.||Wafer transfer system|
|US4313783 *||19 May 1980||2 Feb 1982||Branson International Plasma Corporation||Computer controlled system for processing semiconductor wafers|
|US4313815 *||7 Apr 1978||2 Feb 1982||Varian Associates, Inc.||Sputter-coating system, and vaccuum valve, transport, and sputter source array arrangements therefor|
|US4318767 *||20 Nov 1980||9 Mar 1982||Tokyo Ohka Kogyo Kabushiki Kaisha||Apparatus for the treatment of semiconductor wafers by plasma reaction|
|US4449885 *||24 May 1982||22 May 1984||Varian Associates, Inc.||Wafer transfer system|
|US4457661 *||7 Dec 1981||3 Jul 1984||Applied Materials, Inc.||Wafer loading apparatus|
|US4534314 *||10 May 1984||13 Aug 1985||Varian Associates, Inc.||Load lock pumping mechanism|
|US4563240 *||2 Aug 1984||7 Jan 1986||Hitachi, Ltd.||Method and apparatus for plasma process|
|US4576698 *||30 Jun 1983||18 Mar 1986||International Business Machines Corporation||Plasma etch cleaning in low pressure chemical vapor deposition systems|
|US4634331 *||10 Dec 1984||6 Jan 1987||Varian Associates, Inc.||Wafer transfer system|
|US4643629||22 Oct 1985||17 Feb 1987||Anelva Corporation||Automatic loader|
|US4705951 *||17 Apr 1986||10 Nov 1987||Varian Associates, Inc.||Wafer processing system|
|US4715764 *||28 Apr 1986||29 Dec 1987||Varian Associates, Inc.||Gate valve for wafer processing system|
|US4824309 *||8 Sep 1986||25 Apr 1989||Hitachi, Ltd.||Vacuum processing unit and apparatus|
|US4836733 *||21 Dec 1987||6 Jun 1989||Varian Associates, Inc.||Wafer transfer system|
|US4836905||16 Jul 1987||6 Jun 1989||Texas Instruments Incorporated||Processing apparatus|
|US4851101 *||18 Sep 1987||25 Jul 1989||Varian Associates, Inc.||Sputter module for modular wafer processing machine|
|US4895107 *||5 Jul 1988||23 Jan 1990||Kabushiki Kaisha Toshiba||Photo chemical reaction apparatus|
|US4902934 *||10 May 1988||20 Feb 1990||Sumitomo Metal Industries, Ltd.||Plasma apparatus|
|US4903937 *||21 Mar 1989||27 Feb 1990||Varian Associates, Inc.||Isolation valve for vacuum and non-vacuum application|
|US4909695 *||20 Jul 1988||20 Mar 1990||Materials Research Corporation||Method and apparatus for handling and processing wafer-like materials|
|US4911597 *||25 Aug 1987||27 Mar 1990||Applied Materials, Inc.||Semiconductor processing system with robotic autoloader and load lock|
|US4915564 *||20 Jul 1988||10 Apr 1990||Materials Research Corporation||Method and apparatus for handling and processing wafer-like materials|
|US4917556||26 May 1989||17 Apr 1990||Varian Associates, Inc.||Modular wafer transport and processing system|
|US4923584||31 Oct 1988||8 May 1990||Eaton Corporation||Sealing apparatus for a vacuum processing system|
|US4924890 *||16 May 1986||15 May 1990||Eastman Kodak Company||Method and apparatus for cleaning semiconductor wafers|
|US4936329 *||1 May 1989||26 Jun 1990||Leybold Aktiengesellschaft||Device for cleaning, testing and sorting of workpieces|
|US4951601 *||23 Jun 1989||28 Aug 1990||Applied Materials, Inc.||Multi-chamber integrated process system|
|US4969790||24 Oct 1988||13 Nov 1990||Leybold Aktiengesellschaft||Apparatus on the carousel principle for the coating of substrates|
|US5007981 *||9 Feb 1990||16 Apr 1991||Hitachi, Ltd.||Method of removing residual corrosive compounds by plasma etching followed by washing|
|US5014217 *||9 Feb 1989||7 May 1991||S C Technology, Inc.||Apparatus and method for automatically identifying chemical species within a plasma reactor environment|
|US5186718||15 Apr 1991||16 Feb 1993||Applied Materials, Inc.||Staged-vacuum wafer processing system and method|
|US5292393 *||16 Dec 1991||8 Mar 1994||Applied Materials, Inc.||Multichamber integrated process system|
|US5351415 *||18 May 1992||4 Oct 1994||Convey, Inc.||Method and apparatus for maintaining clean articles|
|US5436848 *||15 Apr 1993||25 Jul 1995||Dainippon Screen Mfg. Co., Ltd.||Method of and device for transporting semiconductor substrate in semiconductor processing system|
|US5452166 *||1 Oct 1993||19 Sep 1995||Applied Magnetics Corporation||Thin film magnetic recording head for minimizing undershoots and a method for manufacturing the same|
|US5462397 *||15 Mar 1994||31 Oct 1995||Tokyo Electron Limited||Processing apparatus|
|US5504033 *||15 Nov 1994||2 Apr 1996||Harris Corporation||Method for forming recessed oxide isolation containing deep and shallow trenches|
|US5504347 *||17 Oct 1994||2 Apr 1996||Texas Instruments Incorporated||Lateral resonant tunneling device having gate electrode aligned with tunneling barriers|
|US5509771 *||28 Jul 1993||23 Apr 1996||Tokyo Electron Limited||Vacuum processing apparatus|
|US5556714 *||29 Sep 1994||17 Sep 1996||Hitachi, Ltd.||Method of treating samples|
|US5651858 *||26 Jul 1996||29 Jul 1997||Motorola Inc.||Method for forming a tapered opening in silicon|
|US5675461 *||19 Jul 1996||7 Oct 1997||Applied Magnetics Corporation||Thin film magnetic recording head for minimizing undershoots|
|US5685684 *||7 Mar 1996||11 Nov 1997||Hitachi, Ltd.||Vacuum processing system|
|EP0246453A2||16 Apr 1987||25 Nov 1987||General Signal Corporation||Novel multiple-processing and contamination-free plasma etching system|
|EP0381338A2||18 Jan 1990||8 Aug 1990||Kokusai Electric Co., Ltd.||Method and apparatus for the transfer of wafers in a vertical cvd diffusion apparatus|
|JP20246453A *||Title not available|
|JP20381338A *||Title not available|
|JPH0252449A||Title not available|
|JPH0261064A||Title not available|
|JPH0265252A||Title not available|
|JPH0294647A||Title not available|
|JPH0319252A||Title not available|
|JPH0430549A *||Title not available|
|JPH0482841A||Title not available|
|JPH01120811A||Title not available|
|JPH01135015A||Title not available|
|JPH01170013A||Title not available|
|JPH01251734A||Title not available|
|JPH01258438A||Title not available|
|JPH01298180A||Title not available|
|JPH01310553A||Title not available|
|JPH01316957A||Title not available|
|JPH02106037A||Title not available|
|JPH02178946A||Title not available|
|JPH02224242A||Title not available|
|JPS636582A *||Title not available|
|JPS5729577A||Title not available|
|JPS5893321A||Title not available|
|JPS5895636A||Title not available|
|JPS5994435A||Title not available|
|JPS6052574A||Title not available|
|JPS6244571A||Title not available|
|JPS6250463A||Title not available|
|JPS6289881A *||Title not available|
|JPS6357734A||Title not available|
|JPS6412037U *||Title not available|
|JPS6431970A *||Title not available|
|JPS6431971A *||Title not available|
|JPS58108641A||Title not available|
|JPS60246635A||Title not available|
|JPS61173445A||Title not available|
|JPS61250185A||Title not available|
|JPS62132321A||Title not available|
|JPS62207866A||Title not available|
|JPS62216315A||Title not available|
|JPS63133521A||Title not available|
|JPS63153270A||Title not available|
|JPS64500072A||Title not available|
|WO1987007309A1||18 May 1987||3 Dec 1987||Novellus Systems, Inc.||Deposition apparatus with automatic cleaning means and method of use|
|1||"Semiconductor World", Sep. 1990, Published by Press Journal, Inc., pp. 136-137 (FTR).|
|2||Decision for Patent Opposition, Opposition No. 10-70995 (Oct. 1999) (TR).|
|3||Decision of the Tokyo High Court, Case No. 58, on oral proceedings, dated Sep. 17, 2002.|
|4||Decision on Opposition No. 2001.72514 relating to JP 3145359, Patentee Hitachi, Ltd., pp. 1-27, Nov. 20, 2002.|
|5||Decision on Opposition No. 2001.72518 relating to JP 3145375, Patentee Hitachi, Ltd., pp. 1-28, Nov. 20, 2002.|
|6||Decision on Opposition No. 2001.72519 relating to JP 3145376, Patentee Hitachi, Ltd., pp. 1-23, Nov. 20, 2002.|
|7||Decision on Opposition No. 2001.72574 relating to JP 3147230, Patentee Hitachi, Ltd., pp. 1-22, Nov. 20, 2002.|
|8||Decision on Opposition to the Grant of a Patent 2000-70844 Jan. 12, 2001 (TR).|
|9||Electronic Parts and Materials, 1989, vol. 28, No. 3, pp. 22-29.|
|10||EP9130625, Office Action Oct. 11, 1993.|
|11||EP91307625, Communication of a notice of opposition Nov. 19, 1998.|
|12||EP91307625, Interlocutory decision in Opposition proceedings, May 16, 2000.|
|13||EP91307625, Minutes of the oral proceedings, Mar. 9, 2000.|
|14||EP91307625, Summons to attend oral proceedings Dec. 9, 1999.|
|15||EP97111628, Office action Dec. 1999.|
|16||EP97111628, Office action Jun. 2001.|
|17||EP97111628, Office action Nov. 2000.|
|18||EP98106162, Office action Jun. 2001.|
|19||EP98106162, Office action Nov. 2000.|
|20||European Search Report, Apr. 1998, re 97111628.0.|
|21||European Search Report, Jan. 1992, re 91307625.3.|
|22||European Search Report, Mar. 1999, re 981061625.|
|23||JP application No. 11-001263, Notification of Reasons for Refusal Feb. 2, 2000 (TR).|
|24||JP application No. 2000-054450, Notification of Reasons for Refusal Sep. 6, 2000 (TR).|
|25||JP application No. 2000-054451, Notification of Reasons for Refusal Sep. 6, 2000 (TR).|
|26||JP application No. 2000-054452, Notification of Reasons for Refusal Sep. 6, 2000 (TR).|
|27||JP application No. 2000-05449, Notification of Reasons for Refusal Sep. 6, 2000 (TR).|
|28||JP application No. 2000-338177, Decision of Refusal Apr. 16, 2002 (FTR).|
|29||JP application No. 2-225321, Notification of Reasons for Refusal Oct. 15, 1996 (TR).|
|30||JP application No. 2646905, Notice of Reasons for Revocation Jul. 21, 1999 (TR).|
|31||JP application No. 2646905, Notification Reasons for Revocation Dec. 15, 1998 (TR).|
|32||JP application No. 3-234408, Notification of Reasons for Refusal, Jan. 28, 1997 (TR).|
|33||JP application No. 8-335329, Interview Record (TR).|
|34||JP application No. 8-335329, Notification of Reasons for Refusal Apr. 7, 1998 (TR).|
|35||JP application No. 8-335329, Notification of Reasons for Refusal Sep. 30, 1997 (TR).|
|36||JP application No. 9-329873, Notification of Reasons for Refusal Jul. 14, 1998 (TR).|
|37||JP application No. 9-329873, Notification of Reasons for Refusal Nov. 10, 1999 (TR).|
|38||JP patent No. 2816139, Notice of Reasons for Revocation Nov. 21, 1999 (TR).|
|39||JP Patent No. 2942527, Notice of Reasons for Revocation Jun. 27, 2000 (TR).|
|40||JP patent No. 314359, Notice of Reasons for Revocation Dec. 18, 2001 (TR).|
|41||JP patent No. 314375, Notice of Reasons for Revocation Dec. 18, 2001 (TR).|
|42||JP patent No. 3145375, Notice of Reasons for Revocation Dec. 18, 2001 (TR).|
|43||JP patent No. 3147230, Notice of Reasons for Revocation Dec. 18, 2001 (TR).|
|44||KR application No. 14984/91, Preliminary Notice of Ground(s) for Rejection (TR).|
|45||KR application No. 184682, Trial Decision Aug. 1, 2000 (TR).|
|46||KR application No. 184682-00-00, Notice of Decision on Opposition to the Granted Patent Oct. 4, 2000 (TR).|
|47||KR application No. 212819, Dec. 22, 2000, Notice of Decision on Opposition to the Granted Patent (TR).|
|48||KR application No. 212874, Dec. 22, 2000, Notice of Decision on Opposition to the Granted Patent.|
|49||KR application No. 46756/98, Preliminary Notice of Ground(s) for Rejection Jan. 20, 1999 (TR).|
|50||KR application No. 46757/98, Preliminary Notice of Ground(s) for Rejection Jan. 20, 1999 (TR).|
|51||Latest trend of process automation (Realize, Inc.) (1986), pp. 202 and 203.|
|52||Office Action dated Sep. 3, 2002, in corresponding Japanese Patent Application 2000-040579.|
|53||Office Action dated Sep. 3, 2002, in corresponding Japanese Patent Application 2000-040580.|
|54||Official Decision on Opposition to Grant of Patent 1999-71584 Jan. 12, 2001 (TR).|
|55||*||R.P.H. Chang, "Multipurpose plasma reactor for materials research and processing", J. Vac. Sci. Technol., vol. 14, No. 1, Jan./Feb. 1977, pp. 278-280.|
|56||Semicon News, Apr. 1987 (pp. 38-43) (PTR).|
|57||Semicon News, Semicon/East '84, Dec 1984, vol. 13., p. 199.|
|58||Semiconductor World, pp. 106-111, Sep. 1990.|
|59||Semiconductor World, pp. 122-125, Sep. 1990.|
|60||Semiconductor World, pp. 52-53, Aug. 1991.|
|61||Semiconductor World, pp. pp. 110-113, Oct. 1989.|
|62||Solid State Technology, Dec. 1990, pp. 37-47.|
|63||Solid State Technology, Oct. 1990, pp. 35-41.|
|64||VLSI Processing Equipment handbook, Ph. D. Kazuo Maeda (6-90), pp. 158 (PTR).|
|U.S. Classification||34/406, 414/225.01, 134/902, 34/92|
|International Classification||H01L21/677, H01L21/00, C23C14/56, F26B5/04, B08B3/00|
|Cooperative Classification||C23C14/564, H01L21/67028, H01L21/67253, H01L21/67167, H01L21/67748|
|European Classification||H01L21/67S8B, H01L21/67S2Z2C, H01L21/67S2D4, H01L21/677B6, C23C14/56D|
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Year of fee payment: 8
|9 Jun 2009||CC||Certificate of correction|
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