USRE33992E - Pulsed X-ray lithography - Google Patents
Pulsed X-ray lithography Download PDFInfo
- Publication number
- USRE33992E USRE33992E US07/520,946 US52094690A USRE33992E US RE33992 E USRE33992 E US RE33992E US 52094690 A US52094690 A US 52094690A US RE33992 E USRE33992 E US RE33992E
- Authority
- US
- United States
- Prior art keywords
- ray
- housing
- producing
- plasma
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001015 X-ray lithography Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000003362 replicative effect Effects 0.000 claims description 17
- 239000013077 target material Substances 0.000 claims description 4
- 238000004146 energy storage Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims 7
- 230000000873 masking effect Effects 0.000 claims 4
- 238000010521 absorption reaction Methods 0.000 claims 3
- 230000002452 interceptive effect Effects 0.000 claims 3
- 238000007599 discharging Methods 0.000 claims 2
- 230000002401 inhibitory effect Effects 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052737 gold Inorganic materials 0.000 abstract description 5
- 239000010931 gold Substances 0.000 abstract description 5
- 238000002083 X-ray spectrum Methods 0.000 abstract description 2
- 210000002381 plasma Anatomy 0.000 description 18
- 238000001459 lithography Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000004846 x-ray emission Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- X-Ray Techniques (AREA)
Abstract
A method and means for x-ray lithography which utilizes means for producing in a vacuum system a high-temperature plasma from which soft x-rays are emitted. The x-rays pass through a mask exposing an x-ray resist on a substrate to produce the desired pattern on the substrate. The x-ray spectrum has a significant energy in the 1-5 keV range. These x-rays pass through the support layer of the mask, stop in the pattern material (gold) of the mask or, where the pattern material is lacking, are absorbed adequately by the x-ray resist. Since there is very little energy above 5 keV, there is little if any substrate damage due to the x-rays.
Description
This invention relates to lithography and more particularly to soft x-ray lithography.
Lithography is a process of replicating a pattern on a material. Heretofore lithograhy has been carried out by the use of electrons, light, ultraviolet radiation and x-ray radiation from electron impact and synchrotron sources. In photolithography, light is passed through a mask containing the pattern of interest to a substrate sensitive to light. Light suffers diffraction effects which degrade the replication when fine-scale (about 1 μm) features are present in the mask. X-rays have wavelengths sufficiently small that diffraction effects are negligible. In x-ray lighography, the mask consists of a thin sheet of x-ray-transparent material such as beryllium, silicon or a plastic-like substance supporting a pattern of x-ray absorbing material, usually gold. The substrate is coated with an x-ray sensitive material called x-ray resist. Electron-impact x-ray sources used in the prior art generally produce high-energy x-rays above 5 keV which are not stopped in the thin x-ray resist. Therefore the substrate is damaged. Synchrotron sources emit softer x-rays. However, these x-ray devices are expensive and usually very large and bulky so these are not suitable for routine production of x-ray lithographic replicas.
An x-ray lighography process which involves high-temperature plasma-generated x-rays, and a mask x-ray-resist substrate combination. The plasma is produced in a vacuum system. Laser or electrical energy is transmitted directly to a plasma-producing device and the plasma produced emits intense soft x-rays. The soft x-rays pass through the mask, exposing the x-ray resist on the substrate.
Advantages of the present system are: 1. The x-rays are in the 1-5 keV range and thus do not damage the substrate. 2. Plasmas emit intense short pulses of x-rays. Therefore exposure times are shorter. 3. The size of the plasma source is relatively small. 4. The x-ray emission covers a large solid angle. Hence, several mask resist substrate combinations may be exposed simultaneously. 5. The system costs less than others not in use for fine-line lithography.
FIG. 1 illustrates a pulsed high-temperature plasma as an x-ray source for resist exposure.
FIG. 2 illustrates a laser plasma x-ray source for simultaneous production of several replicas by x-ray lighography.
FIG. 1 illustrates the components of one embodiment involved in pulsed x-ray lithograpy which uses a high-temperature plasma as a x-ray source. As shown, the energy from an energy storage device 10 such as a large capacitor bank is transmitted directly to a plasma-producing device 12 such as an exploded wire diode or a gas injection diode which produces a plasma 15 with a vacuum system 14. The temperature of the plasma 15 exceeds one million degrees and the plasma emits intense soft x-rays 16. The intense soft x-rays are incident on the image-replicating structure 18. The image-replicating structure includes a substrate 20 such as silicon, a layer of x-ray sensitive material called x-ray resist 22 on the substrate and a mask over the x-ray resist. The mask includes a supporting layer 24, such as beryllium which supports the pattern 26 which may be formed from a material such as gold. The soft x-rays incident on the support layer of the mask are stopped by the pattern material and pass through those areas lacking the pattern material. The x-rays that pass through are incident on and absorbed by the x-ray resist, thereby exposing the x-ray resist areas on the substrate. The mask is removed leaving the x-ray-exposed resist. The resist is chemically washed to remove the x-ray-exposed areas of the substrate resist (for positive resists) leaving the unexposed areas of the substrate protruding from the substrate, or the unexposed areas (for negative resists) leaving the exposed areas in place.
FIG. 2 illustrates a laser-plasma x-ray source for simultaneous production of several replicas by soft x-ray lithography. A laser 30, such as a pulsed neodymium (Nd) laser, directs its output beam onto a 45-degree, fully reflective mirror 32 which reflects the laser beam through a focusing lens 34 onto a target 36 at or near normal incidence. The target is of a suitable material such as copper which produces a plasma 38 due to the intense heat of the laser beam. The plasma emits soft x-rays 39 which are directed on to a plurality of mask x-ray resist substrate combinations 40 such as set forth above. The pattern is formed on the substrate as described above for the system shown in FIG. 1. The elements set forth in FIG. 2 are housed within a vacuum chamber 42 which is evacuated to a pressure of less than 100 microns prior to operation thereof.
The target may be a flat piece of material renewed by replacement or translation, or a wire, or rod, fed into place prior to each operation for forming patterns on the substrates. The focusing lens may be protected from the evaporated target material by use of a rolled piece of Mylar 44 or similar material which is between the lens and the target. Also the masks can be similarly protected as shown at 46.
The system set forth and shown above in FIGS. 1 and 2 illustrate the use of plasma-generated x-rays for lithographic forming patterns on a substrate. The use of x-rays permit one to form small-scale patterns useful for microelectronics, bubble computer memory and optoelectronics applications. Plasma sources as set forth above have x-ray-spectra energy from 1-5 keV with emission times less than one microsecond, and a source size less than 1 mm3. Since the x-ray energy is from 1-5 keV range, the radiation incident on the gold pattern is stopped by the gold layer with the rest of the x-ray beam passing through the mask to the x-ray resist. The x-rays incident on the x-ray resist are absorbed by the x-ray resist without any damage to the underlying substrate.
It has been determined that plasma emits intense, short pulses of x-rays. Therefore, exposure times shorter than one microsecond are possible with presently known x-ray-resist materials.
Other means for producing plasmas useful in the present invention are high-temperature electrical sources, vacuum spark devices, electron-beam generators, as well as other types of plasma focus and implosive devices.
Obviously many modifications and variations of the present invention are possible in light of the above teachings. It is therefore to be understood that within the scope of the appended claims the invention may be practiced otherwise than as specifically described.
Claims (5)
1. A soft x-ray lithographic system which comprises:
a housing;
means for evacuating said housing;
means for producing an x-ray-emitting plasma; and
a mask x-ray-resist substrate combination for replicating a desired pattern on said substrate..].
2. A soft x-ray lithographic system .[.as claimed in claim 1 in.]. which .Iadd.comprises.Iaddend.:
.Iadd.a housing;
means for evacuating said housing;
means for producing an x-ray emitting plasma that emits x-rays having an energy from 1-5 keV; and
a mask x-ray resist substrate combination for replicating a desired pattern on said substrate, and
wherein .Iaddend.said x-rays have an .[.energy of from 1 to 5 keV, an.]. emission time of less than 1 microsecond, and a source size of about 1 mm3. .[.3. A lithographic system as claimed in claim 1 in which:
said means for producing an x-ray-emitting plasma is a solid metal target upon which a pulsed laser beam is incident..]. .[.4. A lithographic system as claimed in claim 1 in which:
said means for producing an x-ray-emitting plasma is a high electrical energy storage means in combination with a diode within said housing..]. .[.5. A lithographic system as claimed in claim 1 in which
said means for producing an x-ray-emitting plasma is a laser beam focused onto a metal target within said housing..]. .[.6. A method of replicating a pattern on a material which comprises:
placing a mask x-ray absorption pattern relative to an x-ray-resist substrate combination, placing said substrate combination into a housing;
evacuating said housing;
producing an x-ray-emitting plasma within said evacuated housing; and
directing said x-rays onto said substrate combination..]. .[.7. A method as claimed in claim 6 wherein:
said x-ray-emitting plasma is produced by focusing a pulsed laser output onto a metal target within said evacuated housing..]. .[.8. A method as claimed in claim 6 wherein:
said x-ray-emitting plasma is produced by discharging a high electrical storage means through a diode within said housing..]. .[.9. A soft x-ray lithographic system comprising:
means for producing a hot plasma at a temperature above 1 million degrees Celsius, the plasma being composed of matter which emits x-rays at such temperatures; and
means for replicating an image comprising a substrate, a layer of x-ray sensitive material on said substrate, and masking means between said sensitive layer and said plasma-producing means, said masking means containing a representation of the image to be replicated, said representation of the image being formed by the proper combination of areas that are opaque and areas that are transparent to the soft x-rays,
said image being formed on the x-ray-resist by irradiation of the replicating means by the x-rays from the plasma-producing means..]. .[.10. A system as in claim 9, wherein said plasma-producing source comprises a laser and a target spaced therefrom, said target being made from a material which produces a plasma when struck by a laser beam..]. .Iadd.11. A soft x-ray lithographic system which comprises:
a housing;
means for evacuating said housing;
means for producing an x-ray emitting plasma; wherein said means for producing comprises:
a target in said housing;
means for generating a laser beam;
means for focusing said laser beam on said target;
shield means, disposed between said means for focusing and said target, for protecting said means for focusing from material evaporated from said target; and
a mask x-ray resist substrate combination for replicating a desired pattern on said substrate. .Iaddend. .Iadd.12. The system of claim 11, wherein said shield means is a length of rollable material. .Iaddend. .Iadd.13. A soft x-ray lithographic system which comprises:
a housing;
means for evacuating said housing;
a mask x-ray resist substrate combination for replicating a desired pattern on said substrate;
means for producing an x-ray emitting plasma;
wherein said system further comprises a shield means for protecting said substrate combination from material evaporated by said means for producing said x-ray emitting plasma. .Iaddend. .Iadd.14. The system of claim 13, wherein said shield means is a length of rollable material. .Iaddend. .Iadd.15. A soft x-ray lithographic system which comprises:
housing;
means for evacuating said housing;
means including a target upon which a laser beam is incident for producing an x-ray emitting plasma and evaporated target material, said means for producing including means to inhibit said evaporated target material from interfering with the focusing of said laser; and
a mask x-ray resist substrate combination for replicating a desired pattern
on said substrate. .Iaddend. .Iadd.16. A soft x-ray lithographic system which comprises:
a housing;
means for evacuating said housing;
means including a target upon which a laser beam is incident for producing x-rays from an x-ray emitting plasma and evaporated target material; and
a mask x-ray resist substrate combination for replicating a desired pattern on said substrate, said system including means to inhibit said material from interfering with said replicating. .Iaddend. .Iadd.17. A soft x-ray lithographic system as claimed in claim 16 in which:
said x-rays have an energy of from 1 to 5 keV, an emission time of less than 1 microsecond and a source size of about 1 mm3..Iaddend. .Iadd.18. A lithographic system as claimed in claim 16 in which: .Iadd.said means for producing an x-ray emitting plasma is a solid metal target upon which a pulsed laser beam is incident. .Iaddend. .Iadd.19. A lithographic system as claimed in claim 16 in which:
said means for producing an x-ray emitting plasma is a high electrical energy storage means in combination with a diode within said housing. .Iaddend. .Iadd.20. A lithographic system as claimed in claim 16 in which:
said means for producing an x-ray emitting plasma is a laser beam focused
on a metal target within said housing. .Iaddend. .Iadd.21. A method of replicating a pattern on a material which comprises:
placing a mask x-ray absorption pattern relative to an x-ray resist substrate combination;
placing said substrate combination into a housing;
evacuating said housing;
producing an x-ray emitting plasma and evaporated metal within said evacuated housing;
directing said x-rays onto said substrate combination; and
inhibiting said evaporated metal from interfering with said mask. .Iaddend. .Iadd.22. A method as claimed in claim 21 wherein:
said x-ray emitting plasma is produced by focusing a pulsed laser output onto a target within said evacuated housing. .Iaddend. .Iadd.23. A method as claimed in claim 21 wherein:
said x-ray emitting plasma is produced by discharging a high electrical storage means through a diode within said housing. .Iaddend. .Iadd.24. A soft x-ray lithographic system which comprises:
a housing;
means for evacuating said housing;
means, including a target upon which a pulsed laser beam is incident, for producing an x-ray emitting plasma, said target being renewable by translation; and
a mask x-ray resist substrate combination for replicating a desired pattern on said substrate. .Iaddend. .Iadd.25. A method of replicating a pattern on a material which comprises:
placing a mask x-ray absorption pattern relative to an x-ray resist substrate combination;
placing said substrate combination into a housing;
evacuating said housing;
producing an x-ray emitting plasma within said evacuated housing by focusing a pulsed laser output onto a target within said evacuated housing;
directing said x-rays onto said substrate combination; and
renewing said target by translation. .Iaddend. .Iadd.26. A soft x-ray lithographic system comprising:
means for producing a hot plasma at a temperature above 1 million degrees Celsius, the plasma being composed of matter which emits x-rays at such temperature, said plasma-producing source comprises a laser and a target spaced therefrom, said target being made from a material which produces a plasma when struck by a laser beam, said target being renewable by translation; and
means for replicating an image comprising a substrate, a layer of x-ray sensitive material on said substrate, and masking means between said sensitive layer and said plasma-producing means, said masking means containing a representation of the image to be replicated, said representation of the image being formed by the proper combination of areas that are opaque and areas that are transparent to the soft x-rays,
said image being formed on the x-ray resist by irradiation of the replicating means by the x-rays from the plasma-producing means. .Iaddend.
.Iadd.27. A soft x-ray lithographic system which comprises:
a housing;
means for evacuating said housing;
means for producing an x-ray emitting plasma; and
a plurality of mask x-ray resist substrate combination for replicating a desired pattern on said substrate, each positioned in the path of said emitted x-rays;
wherein said x-rays have an energy of from 1 to 5 kev, an emission time of less than 1 microsecond and a source size of about 1 mm3. .Iaddend.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/520,946 USRE33992E (en) | 1978-08-15 | 1990-05-09 | Pulsed X-ray lithography |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/933,928 US4184078A (en) | 1978-08-15 | 1978-08-15 | Pulsed X-ray lithography |
| US07/520,946 USRE33992E (en) | 1978-08-15 | 1990-05-09 | Pulsed X-ray lithography |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US05/933,928 Reissue US4184078A (en) | 1978-08-15 | 1978-08-15 | Pulsed X-ray lithography |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| USRE33992E true USRE33992E (en) | 1992-07-14 |
Family
ID=27060320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US07/520,946 Expired - Lifetime USRE33992E (en) | 1978-08-15 | 1990-05-09 | Pulsed X-ray lithography |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | USRE33992E (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5512395A (en) * | 1993-04-30 | 1996-04-30 | Lsi Logic Corporation | Image masks for semiconductor lithography |
| US5572562A (en) * | 1993-04-30 | 1996-11-05 | Lsi Logic Corporation | Image mask substrate for X-ray semiconductor lithography |
| US6765987B2 (en) | 2001-03-15 | 2004-07-20 | Safe Food Technologies, Inc. | Resonant plasma x-ray source |
| US20070047060A1 (en) * | 2002-03-14 | 2007-03-01 | Tdk Corporation | Manufacturing method of optical device, optical device, manufacturing method of Faraday rotator, and optical communication system |
| US20110058652A1 (en) * | 2009-09-10 | 2011-03-10 | University of Washington Center for Commercialization | Short working distance spectrometer and associated devices, systems, and methods |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3742229A (en) * | 1972-06-29 | 1973-06-26 | Massachusetts Inst Technology | Soft x-ray mask alignment system |
| US3743842A (en) * | 1972-01-14 | 1973-07-03 | Massachusetts Inst Technology | Soft x-ray lithographic apparatus and process |
| US3969628A (en) * | 1974-04-04 | 1976-07-13 | The United States Of America As Represented By The Secretary Of The Army | Intense, energetic electron beam assisted X-ray generator |
| US4028547A (en) * | 1975-06-30 | 1977-06-07 | Bell Telephone Laboratories, Incorporated | X-ray photolithography |
| US4058486A (en) * | 1972-12-29 | 1977-11-15 | Battelle Memorial Institute | Producing X-rays |
| US4061829A (en) * | 1976-04-26 | 1977-12-06 | Bell Telephone Laboratories, Incorporated | Negative resist for X-ray and electron beam lithography and method of using same |
| US4184078A (en) * | 1978-08-15 | 1980-01-15 | The United States Of America As Represented By The Secretary Of The Navy | Pulsed X-ray lithography |
-
1990
- 1990-05-09 US US07/520,946 patent/USRE33992E/en not_active Expired - Lifetime
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3743842A (en) * | 1972-01-14 | 1973-07-03 | Massachusetts Inst Technology | Soft x-ray lithographic apparatus and process |
| US3742229A (en) * | 1972-06-29 | 1973-06-26 | Massachusetts Inst Technology | Soft x-ray mask alignment system |
| US4058486A (en) * | 1972-12-29 | 1977-11-15 | Battelle Memorial Institute | Producing X-rays |
| US3969628A (en) * | 1974-04-04 | 1976-07-13 | The United States Of America As Represented By The Secretary Of The Army | Intense, energetic electron beam assisted X-ray generator |
| US4028547A (en) * | 1975-06-30 | 1977-06-07 | Bell Telephone Laboratories, Incorporated | X-ray photolithography |
| US4061829A (en) * | 1976-04-26 | 1977-12-06 | Bell Telephone Laboratories, Incorporated | Negative resist for X-ray and electron beam lithography and method of using same |
| US4184078A (en) * | 1978-08-15 | 1980-01-15 | The United States Of America As Represented By The Secretary Of The Navy | Pulsed X-ray lithography |
Non-Patent Citations (10)
| Title |
|---|
| Henry I. Smith, Fabrication Techniques for Surface Acoustic Wave and Thin Film Optical Devices; Proceedings of the IEE vol. 62, No. 10, Oct. 1974, pp. 1361 to 1387. * |
| Henry I. Smith, Fabrication Techniques for Surface-Acoustic-Wave and Thin-Film Optical Devices; Proceedings of the IEE vol. 62, No. 10, Oct. 1974, pp. 1361 to 1387. |
| J. H. McCoy et al, Progress In X Ray Lithography pp. 3 to 22 Presented at the: Electron and Ion Beam Science and Technology, Sixth Internation Conference. * |
| J. H. McCoy-et al, Progress In X-Ray Lithography pp. 3 to 22 Presented at the: Electron and Ion Beam Science and Technology, Sixth Internation Conference. |
| Spiller et al., "Application of Synchrotron Radiation to x-ray Lithograph Journal of Applied Physics, vol. 47, No. 12, Dec. 1976. |
| Spiller et al., Application of Synchrotron Radiation to x ray Lithography , Journal of Applied Physics , vol. 47, No. 12, Dec. 1976. * |
| X Ray Applications Study, Final Report, dated Jul., 1977 (S. Jorna ed.). * |
| X Ray Laser Applications Study, Semiannual Technical Report, dated Nov., 1976 (S. Jorna ed.). * |
| X-Ray Applications Study, Final Report, dated Jul., 1977 (S. Jorna ed.). |
| X-Ray Laser Applications Study, Semiannual Technical Report, dated Nov., 1976 (S. Jorna ed.). |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5512395A (en) * | 1993-04-30 | 1996-04-30 | Lsi Logic Corporation | Image masks for semiconductor lithography |
| US5572562A (en) * | 1993-04-30 | 1996-11-05 | Lsi Logic Corporation | Image mask substrate for X-ray semiconductor lithography |
| US6765987B2 (en) | 2001-03-15 | 2004-07-20 | Safe Food Technologies, Inc. | Resonant plasma x-ray source |
| US20070047060A1 (en) * | 2002-03-14 | 2007-03-01 | Tdk Corporation | Manufacturing method of optical device, optical device, manufacturing method of Faraday rotator, and optical communication system |
| US20110058652A1 (en) * | 2009-09-10 | 2011-03-10 | University of Washington Center for Commercialization | Short working distance spectrometer and associated devices, systems, and methods |
| US8537967B2 (en) | 2009-09-10 | 2013-09-17 | University Of Washington | Short working distance spectrometer and associated devices, systems, and methods |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4184078A (en) | Pulsed X-ray lithography | |
| US3743842A (en) | Soft x-ray lithographic apparatus and process | |
| JP4369420B2 (en) | Radiation source apparatus, lithographic apparatus, illumination system, and method for suppressing debris particles | |
| KR100598639B1 (en) | Radiation Source, Lithographic Apparatus, and Device Manufacturing Method | |
| JPH065611B2 (en) | X-ray equipment | |
| US8368040B2 (en) | Radiation system and lithographic apparatus | |
| US20130015373A1 (en) | EUV Radiation Source and EUV Radiation Generation Method | |
| Yaakobi et al. | Submicron x‐ray lithography using laser‐produced plasma as a source | |
| TWI572997B (en) | Extreme ultraviolet radiation apparatus and radiation generating method | |
| US8547525B2 (en) | EUV radiation generation apparatus | |
| US4119855A (en) | Non vacuum soft x-ray lithographic source | |
| USRE33992E (en) | Pulsed X-ray lithography | |
| US20180317309A1 (en) | Euv source generation method and related system | |
| US5175757A (en) | Apparatus and method to enhance X-ray production in laser produced plasmas | |
| US4665541A (en) | X-ray lithography | |
| EP0127861A2 (en) | X-ray lithography | |
| US5851725A (en) | Exposure of lithographic resists by metastable rare gas atoms | |
| JPH0732119B2 (en) | Method for improving the uniformity of x-ray lithographic beamlines | |
| Nagel et al. | Lithography and high-resolution radiography with pulsed X-rays | |
| Bijkerk et al. | Laser plasma as x-ray source for lithographic imaging of submicron structures onto experimental x-ray resist | |
| Gaeta et al. | High-power collimated laser-plasma source for proximity x-ray nanolithography | |
| Mallozzi et al. | Laser-Produced Plasmas as an Alternative X-Ray Source for Synchrotron Radiation Research and for Microradiography | |
| JPS5915380B2 (en) | Fine pattern transfer device | |
| Gaeta et al. | High-power compact laser-plasma source for x-ray lithography | |
| Gaeta et al. | High-power laser-plasma x-ray source for lithography |