US9779807B2 - Non-volatile memory using bi-directional resistive elements - Google Patents
Non-volatile memory using bi-directional resistive elements Download PDFInfo
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- US9779807B2 US9779807B2 US14/448,174 US201414448174A US9779807B2 US 9779807 B2 US9779807 B2 US 9779807B2 US 201414448174 A US201414448174 A US 201414448174A US 9779807 B2 US9779807 B2 US 9779807B2
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- bitline
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0028—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0071—Write using write potential applied to access device gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/74—Array wherein each memory cell has more than one access device
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/82—Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials
Abstract
Description
Claims (16)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US14/448,174 US9779807B2 (en) | 2014-07-31 | 2014-07-31 | Non-volatile memory using bi-directional resistive elements |
Applications Claiming Priority (1)
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US14/448,174 US9779807B2 (en) | 2014-07-31 | 2014-07-31 | Non-volatile memory using bi-directional resistive elements |
Publications (2)
Publication Number | Publication Date |
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US20160035415A1 US20160035415A1 (en) | 2016-02-04 |
US9779807B2 true US9779807B2 (en) | 2017-10-03 |
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US14/448,174 Active 2035-02-24 US9779807B2 (en) | 2014-07-31 | 2014-07-31 | Non-volatile memory using bi-directional resistive elements |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11355187B2 (en) * | 2019-04-11 | 2022-06-07 | Microchip Technology Inc. | Method for erasing a ReRAM memory cell |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9922719B2 (en) * | 2015-06-07 | 2018-03-20 | Sandisk Technologies Llc | Multi-VT sensing method by varying bit line voltage |
Citations (28)
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JPS60144977A (en) | 1984-01-06 | 1985-07-31 | Seiko Instr & Electronics Ltd | Nonvolatile ram cell |
US4809225A (en) | 1987-07-02 | 1989-02-28 | Ramtron Corporation | Memory cell with volatile and non-volatile portions having ferroelectric capacitors |
US4980859A (en) | 1989-04-07 | 1990-12-25 | Xicor, Inc. | NOVRAM cell using two differential decouplable nonvolatile memory elements |
US5541883A (en) | 1994-02-01 | 1996-07-30 | Integrated Device Technology, Inc. | Method and apparatus for simultaneous long writes of multiple cells of a row in a static ram |
US5594833A (en) | 1992-05-29 | 1997-01-14 | Miyazawa; Takeo | Rapid sound data compression in code book creation |
US5880997A (en) * | 1995-12-22 | 1999-03-09 | Cypress Semiconductor Corp. | Bubbleback for FIFOS |
KR20020002823A (en) | 2000-06-30 | 2002-01-10 | 박종섭 | Non volatile sram cell |
JP2002109875A (en) | 2000-09-29 | 2002-04-12 | Nec Corp | Shadow ram cell using ferroelectric capacitor, and nonvolatile memory device and its control method |
US6529973B1 (en) | 2000-05-22 | 2003-03-04 | Adaptec, Inc. | Programmable generic read channel control device |
US20040120200A1 (en) * | 2002-12-20 | 2004-06-24 | Dietmar Gogl | Current sense amplifier |
US6980459B2 (en) | 2002-10-24 | 2005-12-27 | Texas Instruments Incorporated | Non-volatile SRAM |
US7079415B2 (en) | 2004-06-30 | 2006-07-18 | Stmicroelectronics, Inc. | Magnetic random access memory element |
US20070058424A1 (en) * | 2005-09-13 | 2007-03-15 | Tsuneo Inaba | Semiconductor memory device |
US7197607B2 (en) | 2000-07-28 | 2007-03-27 | Micron Technology, Inc. | Non-volatile memory with concurrent write and read operation to differing banks |
US20080084736A1 (en) * | 2006-10-04 | 2008-04-10 | Kwang-Jin Lee | Multi-port phase change random access memory cell and multi-port phase change random access memory device including the same |
US20080094874A1 (en) * | 2006-10-23 | 2008-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple-read resistance-variable memory cell structure and method of sensing a resistance thereof |
US20090086530A1 (en) * | 2007-10-01 | 2009-04-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for reading multiple magnetic tunnel junctions with a single select transistor |
US20090129139A1 (en) * | 2006-05-01 | 2009-05-21 | The Regents Of The University Of California | Nano-electro-mechanical memory cells and devices |
US20100315862A1 (en) * | 2009-06-12 | 2010-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stable SRAM Cell |
JP2011081896A (en) | 2009-10-12 | 2011-04-21 | Numonyx Bv | Non-volatile sram cell that incorporates phase-change memory into cmos process |
US20110317468A1 (en) * | 2010-06-28 | 2011-12-29 | Qualcomm Incorporated | Non-Volatile Memory with Split Write and Read Bitlines |
US20120075910A1 (en) * | 2010-09-29 | 2012-03-29 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit |
US8331134B2 (en) * | 2010-05-12 | 2012-12-11 | Industrial Technology Research Institute | Non-volatile static random access memory and operation method thereof |
US20130027079A1 (en) * | 2011-07-29 | 2013-01-31 | Crossbar, Inc. | Field programmable gate array utilizing two-terminal non-volatile memory |
US8638599B2 (en) * | 2011-12-16 | 2014-01-28 | Renesas Electronics Corporation | Semiconductor storage device |
US20150318024A1 (en) * | 2014-04-30 | 2015-11-05 | Frank K. Baker, Jr. | Non-volatile memory using bi-directional resistive elements |
US20150348595A1 (en) * | 2014-05-27 | 2015-12-03 | Frank K. Baker, Jr. | Non-volatile memory using bi-directional resistive elements |
US9281042B1 (en) * | 2014-12-17 | 2016-03-08 | Freescale Semiconductor, Inc. | Non-volatile memory using bi-directional resistive elements and capacitive elements |
-
2014
- 2014-07-31 US US14/448,174 patent/US9779807B2/en active Active
Patent Citations (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60144977A (en) | 1984-01-06 | 1985-07-31 | Seiko Instr & Electronics Ltd | Nonvolatile ram cell |
US4809225A (en) | 1987-07-02 | 1989-02-28 | Ramtron Corporation | Memory cell with volatile and non-volatile portions having ferroelectric capacitors |
US4980859A (en) | 1989-04-07 | 1990-12-25 | Xicor, Inc. | NOVRAM cell using two differential decouplable nonvolatile memory elements |
US5594833A (en) | 1992-05-29 | 1997-01-14 | Miyazawa; Takeo | Rapid sound data compression in code book creation |
US5541883A (en) | 1994-02-01 | 1996-07-30 | Integrated Device Technology, Inc. | Method and apparatus for simultaneous long writes of multiple cells of a row in a static ram |
US5880997A (en) * | 1995-12-22 | 1999-03-09 | Cypress Semiconductor Corp. | Bubbleback for FIFOS |
US6529973B1 (en) | 2000-05-22 | 2003-03-04 | Adaptec, Inc. | Programmable generic read channel control device |
KR20020002823A (en) | 2000-06-30 | 2002-01-10 | 박종섭 | Non volatile sram cell |
US7197607B2 (en) | 2000-07-28 | 2007-03-27 | Micron Technology, Inc. | Non-volatile memory with concurrent write and read operation to differing banks |
JP2002109875A (en) | 2000-09-29 | 2002-04-12 | Nec Corp | Shadow ram cell using ferroelectric capacitor, and nonvolatile memory device and its control method |
US6980459B2 (en) | 2002-10-24 | 2005-12-27 | Texas Instruments Incorporated | Non-volatile SRAM |
US20040120200A1 (en) * | 2002-12-20 | 2004-06-24 | Dietmar Gogl | Current sense amplifier |
US7079415B2 (en) | 2004-06-30 | 2006-07-18 | Stmicroelectronics, Inc. | Magnetic random access memory element |
US20070058424A1 (en) * | 2005-09-13 | 2007-03-15 | Tsuneo Inaba | Semiconductor memory device |
US20090129139A1 (en) * | 2006-05-01 | 2009-05-21 | The Regents Of The University Of California | Nano-electro-mechanical memory cells and devices |
US20080084736A1 (en) * | 2006-10-04 | 2008-04-10 | Kwang-Jin Lee | Multi-port phase change random access memory cell and multi-port phase change random access memory device including the same |
US20080094874A1 (en) * | 2006-10-23 | 2008-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple-read resistance-variable memory cell structure and method of sensing a resistance thereof |
US20090086530A1 (en) * | 2007-10-01 | 2009-04-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for reading multiple magnetic tunnel junctions with a single select transistor |
US20100315862A1 (en) * | 2009-06-12 | 2010-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stable SRAM Cell |
JP2011081896A (en) | 2009-10-12 | 2011-04-21 | Numonyx Bv | Non-volatile sram cell that incorporates phase-change memory into cmos process |
US8331134B2 (en) * | 2010-05-12 | 2012-12-11 | Industrial Technology Research Institute | Non-volatile static random access memory and operation method thereof |
US20110317468A1 (en) * | 2010-06-28 | 2011-12-29 | Qualcomm Incorporated | Non-Volatile Memory with Split Write and Read Bitlines |
US20120075910A1 (en) * | 2010-09-29 | 2012-03-29 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit |
US20130027079A1 (en) * | 2011-07-29 | 2013-01-31 | Crossbar, Inc. | Field programmable gate array utilizing two-terminal non-volatile memory |
US8638599B2 (en) * | 2011-12-16 | 2014-01-28 | Renesas Electronics Corporation | Semiconductor storage device |
US20150318024A1 (en) * | 2014-04-30 | 2015-11-05 | Frank K. Baker, Jr. | Non-volatile memory using bi-directional resistive elements |
US20150348595A1 (en) * | 2014-05-27 | 2015-12-03 | Frank K. Baker, Jr. | Non-volatile memory using bi-directional resistive elements |
US9281042B1 (en) * | 2014-12-17 | 2016-03-08 | Freescale Semiconductor, Inc. | Non-volatile memory using bi-directional resistive elements and capacitive elements |
Non-Patent Citations (2)
Title |
---|
Abe, K., et al., "Novel Hybrid DRAM/MRAM Design for Reducing Power of High Performance Mobile CPU", IEEE International Electron Devices Meeting (IEDM), pp. 10.5.1-10.5.4, Dec. 10-13, 2012. |
Ohsawa, T., et al., "1Mb 4T-2MTJ Nonvolatile STT-RAM for Embedded Memories Using 32b Fine-Grained Power Gating Technique with 1.0ns/200ps Wake-up/Power-off Times", 2012 Symposium on VLSI Circuits Digest of Technical Papers, Jun. 2012, pp. 46-47. |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11355187B2 (en) * | 2019-04-11 | 2022-06-07 | Microchip Technology Inc. | Method for erasing a ReRAM memory cell |
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US20160035415A1 (en) | 2016-02-04 |
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