US9223187B2 - Methods and systems for nonlinear optical wave-mixing - Google Patents
Methods and systems for nonlinear optical wave-mixing Download PDFInfo
- Publication number
- US9223187B2 US9223187B2 US14/494,658 US201414494658A US9223187B2 US 9223187 B2 US9223187 B2 US 9223187B2 US 201414494658 A US201414494658 A US 201414494658A US 9223187 B2 US9223187 B2 US 9223187B2
- Authority
- US
- United States
- Prior art keywords
- nonlinear optical
- radiation
- phase
- quasi
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 122
- 230000003287 optical effect Effects 0.000 title claims abstract description 102
- 230000005855 radiation Effects 0.000 claims abstract description 154
- 230000008569 process Effects 0.000 claims abstract description 60
- 238000006243 chemical reaction Methods 0.000 claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 52
- 230000008878 coupling Effects 0.000 claims abstract description 17
- 238000010168 coupling process Methods 0.000 claims abstract description 17
- 238000005859 coupling reaction Methods 0.000 claims abstract description 17
- 230000003321 amplification Effects 0.000 claims abstract description 13
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 70
- 239000010703 silicon Substances 0.000 claims description 70
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 21
- 229910021389 graphene Inorganic materials 0.000 claims description 21
- 230000003993 interaction Effects 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 3
- 239000002178 crystalline material Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000001902 propagating effect Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 75
- 238000001069 Raman spectroscopy Methods 0.000 description 54
- 230000008901 benefit Effects 0.000 description 33
- 239000006185 dispersion Substances 0.000 description 29
- 239000002070 nanowire Substances 0.000 description 27
- 238000010521 absorption reaction Methods 0.000 description 24
- 239000013078 crystal Substances 0.000 description 19
- 230000010287 polarization Effects 0.000 description 14
- 230000006870 function Effects 0.000 description 13
- 230000001419 dependent effect Effects 0.000 description 12
- 230000003595 spectral effect Effects 0.000 description 12
- 238000013461 design Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 238000009826 distribution Methods 0.000 description 9
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 8
- XBJJRSFLZVLCSE-UHFFFAOYSA-N barium(2+);diborate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]B([O-])[O-].[O-]B([O-])[O-] XBJJRSFLZVLCSE-UHFFFAOYSA-N 0.000 description 8
- VCZFPTGOQQOZGI-UHFFFAOYSA-N lithium bis(oxoboranyloxy)borinate Chemical compound [Li+].[O-]B(OB=O)OB=O VCZFPTGOQQOZGI-UHFFFAOYSA-N 0.000 description 8
- 235000019796 monopotassium phosphate Nutrition 0.000 description 8
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 8
- 238000013459 approach Methods 0.000 description 7
- 238000004590 computer program Methods 0.000 description 7
- 229910007475 ZnGeP2 Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 229910003327 LiNbO3 Inorganic materials 0.000 description 4
- SXBYYSODIPNHAA-UHFFFAOYSA-N [Bi+3].[Bi+3].[Bi+3].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-] Chemical compound [Bi+3].[Bi+3].[Bi+3].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-] SXBYYSODIPNHAA-UHFFFAOYSA-N 0.000 description 4
- 229910001632 barium fluoride Inorganic materials 0.000 description 4
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Inorganic materials [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 4
- 229910002113 barium titanate Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 229910000019 calcium carbonate Inorganic materials 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 239000002223 garnet Substances 0.000 description 4
- MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 description 4
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 4
- GNSKLFRGEWLPPA-UHFFFAOYSA-M potassium dihydrogen phosphate Chemical class [K+].OP(O)([O-])=O GNSKLFRGEWLPPA-UHFFFAOYSA-M 0.000 description 4
- WYOHGPUPVHHUGO-UHFFFAOYSA-K potassium;oxygen(2-);titanium(4+);phosphate Chemical compound [O-2].[K+].[Ti+4].[O-]P([O-])([O-])=O WYOHGPUPVHHUGO-UHFFFAOYSA-K 0.000 description 4
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004611 spectroscopical analysis Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- LKJPSUCKSLORMF-UHFFFAOYSA-N Monolinuron Chemical compound CON(C)C(=O)NC1=CC=C(Cl)C=C1 LKJPSUCKSLORMF-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000009022 nonlinear effect Effects 0.000 description 2
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/365—Non-linear optics in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/3534—Three-wave interaction, e.g. sum-difference frequency generation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3515—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
- G02F1/3517—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam using an interferometer
- G02F1/3519—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam using an interferometer of Sagnac type, i.e. nonlinear optical loop mirror [NOLM]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
- G02F1/392—Parametric amplification
-
- G02F2001/392—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
Definitions
- the present invention relates to the field of optics. More particularly, the present invention relates to methods and systems for Raman converters, parametric converters and parametric amplifiers with cavity enhancement and with quasi-phase-matching.
- SFG, DFG and Kerr-induced FWM are parametric light-matter interactions that are not resonant with a material level and that are used in parametric converters and parametric amplifiers.
- Raman-resonant FWM is a light-matter interaction that is perfectly resonant or almost perfectly resonant with a characteristic energy level of the material such as a vibrational energy level and that is used in Raman converters.
- SFG, DFG and Kerr-induced FWM involve a pump radiation beam at frequency ⁇ p , a signal radiation beam at frequency ⁇ s , and an idler radiation beam at frequency ⁇ i .
- Raman-resonant FWM involves a pump radiation beam at frequency ⁇ p , a Stokes radiation beam at frequency ⁇ stokes that is lower than the pump frequency, and an anti-Stokes radiation beam at frequency ⁇ anti-stokes that is higher than the pump frequency.
- 2 ⁇ 15.6 THz, which is the Raman shift of silicon.
- ⁇ k linear 2 k p ⁇ k s ⁇ k i
- ⁇ k linear ⁇ 2 ( ⁇ ) 2 ⁇ 1/12 ⁇ 4 ( ⁇ ) 4
- ⁇ is the frequency difference between the pump and signal waves.
- ⁇ k linear k p +k s ⁇ k t
- ⁇ k linear k p ⁇ k s ⁇ k i
- phase mismatch for these processes also contains a nonlinear part that is function of the pump intensity, but since linear phase mismatches are considered here that are mostly much larger than the nonlinear part of the phase mismatch, the latter can be neglected in the remaining part of this text.
- the dispersion-engineered geometry of the waveguide is such that one crucial advantage of using nanowires cannot be fully exploited.
- the particular advantage that cannot be fully exploited in that case is the possibility of having a fast recombination of two-photon-absorption-created free carriers at the waveguide boundaries.
- the nanowire referred to above exhibits a relatively large free carrier lifetime ( ⁇ eff ⁇ 3 ns), yielding substantial free carrier absorption (FCA) losses in the waveguide, and this decreases the wavelength conversion efficiency. Although these losses could be reduced by implementing around the nanowire carrier-extracting p-i-n diodes connected to a power supply, the advantage of using the low-cost intrinsic silicon-on-insulator platform would then be lost.
- the challenge will be to enable efficient Raman-resonant FWM in the near-infrared wavelength domain using a nanowire that is not dispersion-engineered in a way that leads to substantial FCA losses.
- wavelength conversion possibilities should all ideally be available in one device, and preferably based on Kerr-induced FWM, which offers more wavelength flexibility than Raman-resonant FWM. It is extremely challenging, however, to engineer the dispersion of a silicon waveguide such that phase-matched Kerr-induced FWM is obtained for large pump-signal frequency shifts both in the near- and mid-infrared spectral regions.
- One approach to circumvent this problem of dispersion engineering would be to use the Kerr-induced FWM scheme based on two different pump frequencies, but the requirement of having a second pump frequency close to the desired idler frequency might be difficult to meet in the mid-infrared region, as widely tunable and practical mid-infrared pump sources are not so common yet.
- the challenge will be to enable efficient, single-pump Kerr-induced FWM for a large pump-signal frequency shift in a spectral domain where the dispersion characteristics of the silicon nanowire are not optimally engineered for phase-matched Kerr-induced FWM.
- a silicon-based source based on Kerr-induced FWM that, by changing just one parameter, can generate radiation at different wavelengths spread in the near- and mid-infrared spectral region, then one should use a technique different from phase matching.
- the development of such discretely-tunable sources would represent an important step in the search for low-cost, compact, room-temperature light sources tunable in the near- and mid-infrared.
- Such devices are still scarce nowadays but highly desirable for many applications, ranging from telecommunications and industrial process control, to environmental monitoring and biomedical analysis.
- the type of “adjustment” that needs to be applied to these propagation regions is that the susceptibility should be made zero there for the Raman-resonant or Kerr-induced FWM processes or reversed in sign for the SFG and DFG processes, so that these nonlinear processes cannot establish a decrease of the idler intensity in these areas whereas the fields' dephasing can still evolve back to zero.
- This is done using a heterogeneous conversion medium of which the characteristics are periodically manipulated. This is a complex approach and disadvantageous from a practical point of view.
- nonlinear optical wave mixing such as for example SFG, DFG and FWM like for example Raman-resonant FWM and/or Kerr-induced FWM.
- efficient nonlinear optical wave mixing such as for example SFG, DFG and FWM, e.g. Raman-resonant FWM and/or efficient Kerr-induced FWM, can be obtained at wavelengths suitable for use in telecommunication.
- Nonlinear optical wave mixing may in one example be a third order process, such as four wave mixing, or in another example be a second order process, such as three wave mixing.
- efficient closed structure silicon Raman converters such as e.g. ring or disc silicon Raman converters
- efficient closed structure silicon parametric converters such as e.g. ring or disc silicon parametric converters
- efficient closed structure silicon parametric amplifiers e.g. ring or disc silicon parametric amplifiers
- cavity-enhanced quasi-phase matched wave mixing such as cavity-enhanced quasi-phase-matched DFG, cavity-enhanced quasi-phase-matched SFG, cavity-enhanced quasi-phase-matched Raman-resonant FWM and/or using cavity-enhanced quasi-phase-matched Kerr-induced FWM in a silicon resonator.
- Such cavity-enhanced quasi-phase matched wave mixing may in one example be a third order process, such as four wave mixing, or in another example be a second order process, such as three wave mixing.
- cavity-enhanced quasi-phase-matched wave mixing such as cavity-enhanced quasi-phase-matched SFG, cavity-enhanced quasi-phase-matched DFG, cavity-enhanced quasi-phase-matched Raman-resonant FWM, cavity-enhanced quasi-phase-matched Kerr-induced FWM, in a resonator structure, e.g. silicon ring or disc resonator, can provide both a small effective phase mismatch and a high pump intensity, resulting in a boost of the nonlinear optical wave mixing efficiency, e.g. SFG efficiency, DFG efficiency, Raman-resonant FWM efficiency and or of the Kerr-induced FWM efficiency.
- a resonator structure e.g. silicon ring or disc resonator
- phase-matched wave mixing e.g. phase-matched SFG, DFG, Raman-resonant FWM or Kerr-induced FWM performs badly, i.e. in the cases where the group velocity dispersion at the pump wavelength is large and/or the frequency difference between the pump and the signal is large.
- efficient nonlinear optical wave matching e.g. efficient SFG, efficient DFG, efficient Raman-resonant FWM or efficient Kerr-induced FWM can be obtained for any value of the linear phase mismatch ⁇ k linear .
- the waveguide when working with a waveguide its geometry can be chosen freely, that the waveguide can be a nanowire, and that the nanowire dimensions can be chosen such that the free-carrier lifetime in the nanowire is short so that the free carrier absorption losses can be kept low.
- suitable conditions for quasi-phase matched wave mixing such as for quasi-phase-matched SFG, for quasi-phase-matched DFG, for quasi-phase-matched Raman-resonant FWM and for quasi-phase-matched Kerr-induced FWM are obtained in a uniform medium. More particularly it is an advantage that the obtained system and method is relatively simple and does e.g. not require active periodical adaptation of the nonlinear optical properties of a medium.
- a high pump intensity in the Raman converter, in the parametric converter, and in the parametric amplifier does not need to be provided using a high-power pump, but that the pump is resonantly enhanced in the medium for obtaining a sufficiently high pump power.
- the signal input power, and the idler power also can be resonantly enhanced regardless the value of the linear phase mismatch ⁇ k linear , resulting in high intensities being achieved.
- the signal input power initially inputted does not need to be a high signal input power pump.
- the present invention relates to a system for conversion or amplification using quasi-phase matched nonlinear optical wave mixing, the system comprising a first radiation source for providing a pump radiation beam, a second radiation source for providing a signal radiation beam, and a bent structure for receiving the pump radiation beam and the signal radiation beam, wherein a radiation propagation portion, e.g. waveguiding portion, of the bent structure is made of a uniform material, e.g.
- the bent structure comprises a dimension taking into account the spatial variation of the nonlinear susceptibility along the radiation propagation portion as experienced by radiation travelling along the bent structure for obtaining quasi-phase-matched nonlinear optical wave mixing in the radiation propagation portion, the dimension being substantially inverse proportional with the linear phase mismatch for nonlinear optical wave mixing and an outcoupling radiation propagation portion, e.g. waveguiding portion, for coupling out an idler radiation beam generated in the bent structure.
- the nonlinear optical wave mixing may be a third order process, such as four wave mixing, or a second order process such as three wave mixing.
- Three wave mixing may comprise sum-frequency generation or difference frequency generation.
- the system for conversion or amplification may be a system for Raman conversion, parametric conversion or parametric amplification.
- the structure may be closed, so that the structure is a resonator allowing to establish cavity enhancement.
- the closed structure may be a ring structure or a disc structure, such as for example a circular ring, an elliptical ring, a rectangular ring, an octagonal ring, a circular disc, an elliptical disc, a rectangular disc, an octagonal disc, etc.
- the structure also may be an open structure such as a snake-like structure, a sickle structure, or a spiral structure.
- a relatively simple system can be obtained allowing quasi-phase-matched nonlinear optical wave mixing, e.g. quasi-phase-matched sum-frequency generation (SFG), quasi-phase-matched difference frequency generation (DFG), quasi-phase-matched Raman-resonant FWM or quasi-phase-matched Kerr-induced FWM.
- quasi-phase-matched nonlinear optical wave mixing e.g. quasi-phase-matched sum-frequency generation (SFG), quasi-phase-matched difference frequency generation (DFG), quasi-phase-matched Raman-resonant FWM or quasi-phase-matched Kerr-induced FWM.
- the bent structure may be a ring structure or disc structure.
- the ring structure or disc structure may be circular, and the radius R of the ring structure or disc structure may be determined substantially inverse proportional with the linear phase mismatch for nonlinear optical wave mixing.
- the radius R thereby may be defined as the distance from the center of the circle to the central longitudinal axis in the circular radiation propagation area.
- the radius R of the circular ring structure may be determined by the radius R being substantially equal to a factor s, equal to +1 or ⁇ 1, times four divided by the linear phase mismatch for Raman-resonant FWM or divided by the linear phase mismatch for Kerr-induced FWM, i.e. it substantially fulfills relation
- R s ⁇ 4 ⁇ ⁇ ⁇ k linear , with s being a factor equal to +1 or ⁇ 1 so that R has a positive value, and ⁇ k linear being linear phase mismatch for Raman-resonant FWM or being the linear phase mismatch for Kerr-induced FWM.
- the radius R of the circular ring structure may be determined by the radius R being substantially equal to a factor s, equal to +1 or ⁇ 1, times one divided by the linear phase mismatch for SFG or divided by the linear phase mismatch for DFG, i.e. it substantially fulfills relation
- R s ⁇ 1 ⁇ ⁇ ⁇ k linear with s being a factor equal to +1 or ⁇ 1 so that R has a positive value, and ⁇ k linear being linear phase mismatch for SFG or being the linear phase mismatch for DFG.
- substantially being equal to or substantially fulfilling the relation there is meant that advantageously the radius is equal or the relation is fulfilled, but that a deviation on the design rule is allowed wherein the quasi-phase-matched SFG efficiency, quasi-phase-matched DFG efficiency or quasi-phase-matched FWM efficiency is still high due to the explored effects.
- a quasi-phase-matched nonlinear optical wave mixing efficiency of 0.8 times the maximal efficiency at zero deviation may still be guaranteed.
- a quasi-phase-matched nonlinear optical wave mixing efficiency of 0.5 times the maximal efficiency at zero deviation may still be guaranteed.
- a quasi-phase-matched nonlinear optical wave mixing efficiency of 0.3 times the maximal efficiency at zero deviation may still be guaranteed.
- the quasi-phase-matched efficiency might become smaller than 0.2 times the maximal efficiency at zero deviation, and the quasi-phase-matching approach might not be interesting any longer.
- the bent structure may have an inscribed circle and/or circumscribed circle having a radius inversely proportional to the linear phase mismatch for nonlinear optical wave mixing, e.g. SFG, DFG, FWM.
- the bent structure may have an average radius inversely proportional to the linear phase mismatch for nonlinear optical wave mixing, e.g. SFG, DFG, FWM.
- the system furthermore may be adapted to provide a pump radiation beam with wavenumber k p and a signal radiation beam with wavenumber k s , and result in an idler radiation beam with wavenumber k i , so that at least one of these beams is at resonator resonance, e.g. ring or disc resonance.
- resonator resonance e.g. ring or disc resonance.
- at least one of the beams' wavenumbers may yield, when multiplying with R, an integer number.
- the system may comprise a heating and/or cooling means and a temperature controller for controlling the temperature so that at least one of the pump radiation, the signal radiation and the idler radiation is at resonator resonance.
- the uniform medium may be a Raman-active medium, and the process may be a quasi-phase-matched Raman-resonant FWM process.
- the uniform medium may be a Kerr-nonlinear material and the process may be a quasi-phase-matched Kerr-nonlinear FWM-process.
- the uniform medium may be a quadratically nonlinear optical material and the process may be a quasi-phase-matched SFG or DFG process.
- quasi-phase-matched nonlinear optical wave mixing e.g. nonlinear optical four wave mixing or nonlinear optical three wave mixing such as quasi-phase-matched SFG and/or quasi-phase-matched DFG and/or quasi-phase-matched Raman-resonant FWM and/or quasi-phase-matched Kerr-induced FWM in a uniform medium such as a silicon ring
- quasi-phase-matched SFG and/or quasi-phase-matched DFG and/or quasi-phase-matched Raman-resonant FWM and/or quasi-phase-matched Kerr-induced FWM in a uniform medium such as a silicon ring can be obtained since it does not require special techniques to periodically adapt the nonlinear optical characteristics of the medium.
- the uniform medium may be a crystalline material.
- the uniform medium may be (100) grown silicon, germanium, GaAs, InGaAs, diamond, and other semiconductor materials.
- the uniform medium may be SiN, Ba(NO 3 ) 2 , CaCO 3 , NaNO 3 , tungstate crystals, BaF 2 , potassium titanyl phosphate (KTP), potassium dihydrogen phosphate (KDP), LiNbO 3 , deuterated potassium dihydrogen phosphate (DKDP), lithium triborate (LBO), barium borate (BBO), bismuth triborate (BIBO), LiIO 3 , BaTiO 3 , yttrium iron garnet (YIG), AlGaAs, CdTe, AgGaS 2 , KTiOAsO 4 (KTA), ZnGeP 2 (ZGP), RBTiOAsO 4 (RTA), and other crystals.
- the uniform medium may be silicon covered by a thin layer of another uniform material such as
- nonlinear optical wave mixing processes such as SFG and/or DFG and/or Raman-resonant FWM and/or Kerr-induced FWM, can be established for wavelengths suitable for e.g. telecommunication.
- the (100) grown silicon may be a silicon on insulator waveguide.
- a controller may be provided for tuning the system with respect to an output wavelength, an output power or an obtained bandwidth.
- the system may be adapted for selecting a TE or TM output by selecting respectively a TE or TM input. It is an advantage of embodiments according to the present invention that the polarization of the output is the same as the polarization of the input of the Raman converter, of the parametric converter, and of the parametric amplifier, and thus that no additional polarization filter is required for obtaining a particular polarized output.
- the present invention also relates to a method for obtaining conversion or amplification, using quasi-phase-matched nonlinear optical wave mixing, the method comprising receiving a pump radiation beam and a signal radiation beam in a bent structure, a radiation propagation portion, e.g.
- the waveguiding portion, of the bent structure being made of a uniform nonlinear optical material and having a dimension taking into account the spatial variation of the nonlinear optical susceptibility along the radiation propagation portion as experienced by radiation travelling along the bent structure for obtaining quasi-phase-matched nonlinear optical wave mixing in the radiation propagation portion, the dimension being substantially inverse proportional with a linear phase mismatch for nonlinear optical wave mixing, obtaining an idler radiation beam by interaction of the pump radiation beam and the signal radiation beam and coupling out an idler radiation beam from the bent structure.
- Conversion or amplification may be any of Raman conversion, parametric conversion or parametric amplification.
- the nonlinear optical wave mixing may be a SFG process, a DFG progress, a Raman-resonant FWM process or a Kerr-induced FWM process.
- the bent structure may for example be a ring or disc structure, where the pump radiation beam and the signal radiation beam propagate in the ring or disc structure, whereby the ring or disc structure is circular and has a radius R determined substantially inverse proportional with a linear phase mismatch for quasi-phase-matched nonlinear optical wave mixing, e.g. quasi-phase-matched SFG, quasi-phase-matched DFG, quasi-phase-matched Raman-resonant FWM or quasi-phase-matched Kerr-induced FWM.
- quasi-phase-matched nonlinear optical wave mixing e.g. quasi-phase-matched SFG, quasi-phase-matched DFG, quasi-phase-matched Raman-resonant FWM or quasi-phase-matched Kerr-induced FWM.
- the pump radiation beam and the signal radiation beam may be guided in a circular ring structure having a radius substantially fulfilling the relation
- R s ⁇ 1 ⁇ ⁇ ⁇ k linear with s being a factor equal to +1 or ⁇ 1 so that R has a positive value, and ⁇ k linear being the linear phase mismatch for SFG or being the linear phase mismatch for DFG.
- the pump radiation beam and the signal radiation beam may be guided in a circular ring structure having a radius substantially fulfilling the relation
- R s ⁇ 4 ⁇ ⁇ ⁇ k linear , with s being a factor equal to +1 or ⁇ 1 so that R has a positive value, and ⁇ k linear being the linear phase mismatch for Raman-resonant FWM or being the linear phase mismatch for Kerr-induced FWM.
- s being a factor equal to +1 or ⁇ 1 so that R has a positive value
- ⁇ k linear being the linear phase mismatch for Raman-resonant FWM or being the linear phase mismatch for Kerr-induced FWM.
- the method may comprise letting the radiation beams propagate in the ring or disc structure and obtaining ring or disc resonance for at least one of the different radiation beams.
- the method may comprise adjusting the in- and/or outcoupling efficiency for adjusting the cavity-enhancement of the radiation beams inside the ring or disc structure.
- the method may comprise tuning the system with respect to an output wavelength, an output power or an obtained bandwidth.
- the present invention also relates to a method for designing a converter or amplifier using quasi-phase-matched nonlinear optical wave mixing, the converter or amplifier using a pump radiation beam and a signal radiation beam, the method comprising selecting a bent structure suitable for quasi-phase-matched nonlinear optical wave mixing comprising selecting a uniform material for a radiation propagation portion of the bent structure and selecting at least one dimension of the radiation propagation portion taking into account the spatial variation of the nonlinear optical susceptibility along the radiation propagation portion as experienced by radiation travelling along the bent structure.
- the dimension thereby is substantially inverse proportional with the linear phase mismatch for nonlinear optical wave mixing.
- the present invention also relates to a computer program product for, when executed on a computer, performing a method and/or controlling a system as described above.
- the present invention also relates to a data carrier carrying such a computer program product or to the transmission of such a computer program product over a wide or local area network.
- FIG. 1A illustrates a schematic top-view representation of a Raman converter, a parametric converter or a parametric amplifier based on a (100) grown silicon ring, according to an embodiment of the present invention.
- FIG. 1B illustrates a schematic representation of a Raman converter, a parametric converter or a parametric amplifier based on a whispering-gallery-mode disc where the light is coupled in the disc and out of the disc via a buried waveguide and where the light travels around in the disk close to its rim, and wherein quasi-phase matching according to an embodiment of the present invention can be obtained.
- FIG. 1C illustrates a schematic top-view representation of a Raman converter, a parametric converter or a parametric amplifier based on an octagonally polished disc where the light is coupled in the disk and out of the disk via free space and where the light travels around in the disc close to its rim through reflection on each of the eight facets of the disk, and wherein quasi-phase-matching according to an embodiment of the present invention can be obtained.
- FIG. 1D illustrates a schematic top-view representation of a Raman converter, a parametric converter or a parametric amplifier based on an open, sickle-shaped structure, the contours of which are along a circular ring, and wherein quasi-phase-matching according to an embodiment of the present invention can be obtained.
- FIG. 1E illustrates a schematic top-view representation of a Raman converter, a parametric converter or a parametric amplifier based on an open, snake-shaped structure, the contours of which are along a circular ring and wherein quasi-phase-matching according to an embodiment of the present invention can be obtained.
- FIG. 1F illustrates a schematic top-view representation of a Raman converter, a parametric converter or a parametric amplifier based on an open, sickle-shaped structure, the contours of which are along an octagon and wherein quasi-phase-matching according to an embodiment of the present invention can be obtained.
- FIG. 1G illustrates a schematic top-view representation of a Raman converter, a parametric converter or a parametric amplifier based on an open, snake-shaped structure, the contours of which are along an octagon and wherein quasi-phase-matching according to an embodiment of the present invention can be obtained.
- FIG. 1H illustrates a schematic top-view representation of a Raman converter, a parametric converter or a parametric amplifier based on an open, double-spiral-shaped structure (not drawn to scale), the contours of which are along a circular ring and wherein quasi-phase-matching according to an embodiment of the present invention can be obtained.
- FIG. 1I illustrates a schematic top-view representation of a Raman converter, a parametric converter or a parametric amplifier based on an open, double-spiral-shaped structure, the contours of which are along a rectangle and wherein quasi-phase-matching according to an embodiment of the present invention can be obtained.
- FIG. 1J illustrates a schematic top-view representation of a parametric converter or a parametric amplifier based on an open, double-spiral-shaped structure (not drawn to scale), the contours of which are along a circular ring and the top surface of which is covered by a uniform sheet of material through which a current is flowing, and wherein quasi-phase-matching according to an embodiment of the present invention can be obtained.
- FIG. 2 illustrates (a) pump, (b) signal, (c) idler intensities in a ring Raman converter with the intensity values at a distance of 0 mm (2.1 mm) corresponding to
- the solid and dashed lines correspond to the quasi-phase-matched Raman converter pumped with 20 mW and to the perfectly phase-matched Raman converter pumped with 5 mW, respectively.
- FIG. 3 illustrates the signal-to-idler conversion efficiency of the quasi-phase-matched ring Raman converter and of the perfectly phase-matched ring Raman converter as a function of pump input power.
- FIG. 10 illustrates the idler intensity in the spiral of the quasi-phase-matched SFG converter, as can be obtained in an embodiment according to the present invention.
- FIG. 11 illustrates the idler intensity in the spiral of the quasi-phase-matched DFG converter, as can be obtained in an embodiment according to the present invention.
- FIG. 12 illustrates a computing system as can be used in embodiments of the present invention for performing a method of resonating, converting or amplifying.
- a quasi-phase-matched (QPM) nonlinear optical wave mixing process such as for example QPM SFG, QPM DFG, QPM Raman-resonant FWM or QPM Kerr-induced FWM
- QPM SFG, QPM DFG, QPM Raman-resonant FWM or QPM Kerr-induced FWM reference is made to a nonlinear optical wave mixing process where quasi-phase-matching in embodiments of the present invention is obtained in a non-traditional way, namely using a uniform medium.
- Nonlinear optical wave mixing may encompass for example four wave mixing or three wave mixing.
- QPM SFG, QPM DFG, QPM Raman-resonant FWM or QPM Kerr-induced FWM can be obtained for any value of the linear phase mismatch ⁇ k linear .
- a bent structure reference is made to a non-straight structure.
- the latter also may be expressed as a structure wherein the propagation direction of propagating radiation is altered.
- the latter may for example be a curved structure, such as for example a circular, elliptical, or spiral structure, or a broken structure, such as for example an octagonal shaped structure or a rectangular shaped structure.
- a radiation propagation portion reference may be made to a medium that allows propagation of radiation, and that for example can be a waveguide or a medium that allows free-space radiation propagation.
- the present invention relates to methods and systems for performing conversion or amplification using QPM nonlinear optical processes, more particularly nonlinear optical wave mixing processes.
- Such nonlinear optical processes encompass e.g. four wave mixing processes as well as three wave mixing processes such as SFG, DFG, Raman-resonant FWM and Kerr-induced FWM.
- the methods and systems for performing conversion or amplification may be methods and systems for performing Raman conversion, for performing parametric conversion or for performing parametric amplification.
- the system according to embodiments of the present invention comprises a first radiation source for providing a pump radiation beam and a second radiation source for providing a signal radiation beam.
- the system furthermore comprises a bent structure for receiving the pump radiation beam and the signal radiation beam, wherein a radiation propagation portion, e.g. a waveguide portion of the bent structure is made of uniform material.
- a radiation propagation portion e.g. a waveguide portion of the bent structure is made of uniform material.
- uniform material there is meant that the material is a uniform nonlinear optical material.
- radiation travelling through the bent structure will not see a uniform nonlinear optical susceptibility, but will see a variation therein. More particularly, whereas the material is uniform in a laboratory reference system fixed to the system, a variation in the nonlinear susceptibility is present felt by the radiation travelling through the bent structure, depending on the polarization of the radiation and the orientation of the principle crystal axes of the material used, e.g.
- the dimensions of the bent structure are selected taking into account the spatial variation of the susceptibility along the bent structure as experienced by the radiation travelling along the bent structure so that non-traditional QPM SFG, DFG, or FWM is obtained in the bent structure made of a uniform material.
- the bent structure thus may be any structure allowing to change or alter, e.g. curve, the propagation direction of the radiation, such that a variation in susceptibility is felt by the radiation.
- the bent structure may be a closed structure, such as for example a ring structure or disc structure.
- Such ring or disc structure may for example be a circular ring, an elliptical ring, an octagonal ring, a rectangular ring, a circular disc, an elliptical disc, an octagonal disc or a rectangular disc and the properties of the closed structure may be selected such that at least one of the radiation beams is enhanced.
- the structure may be an open structure wherein a change is induced in the propagation direction of the radiation such that a variation in susceptibility is felt by the radiation.
- An example thereof could be a sickle-shaped structure, a snake-shaped structure, or a spiral-shaped structure, the contours of which are along a circular ring, an octagon, or another type of polygon. A number of particular examples is shown in FIG. 1B to FIG. 1J .
- a dimension of the bent structure is selected so that QPM FWM is obtained in the bent structure made of a uniform material.
- the typical dimension of a structure may be an average length of a radiation propagation portion, e.g. waveguide portion, of the bent structure, but also may be for example a radius of the bent structure, an average radius of the bent structure, a radius of an inscribed circle or incircle of the structure, a radius of a circumscribed circle or circumcircle, etc.
- a dimension also may be an average radius of curvature. If for example the average length is used, the average length of the radiation propagation part of the bent structure may be in a range between 1 ⁇ m and 10 cm.
- a dimension of the bent structure or more particularly the radiation propagation portion thereof is such that it is substantially inverse proportional with the linear phase mismatch for SFG, DFG or FWM.
- the linear phase mismatch for SFG equals the pump wavenumber plus the signal wavenumber minus the idler wavenumber
- the linear phase mismatch for DFG equals the pump wavenumber minus the signal wavenumber minus the idler wavenumber
- the linear phase mismatch for FWM equals two times the pump wavenumber minus the signal wavenumber minus the idler wavenumber.
- Typical ⁇ ⁇ dimension ⁇ ⁇ of ⁇ ⁇ the ⁇ ⁇ bent ⁇ ⁇ structure f ⁇ ( 1 ⁇ ⁇ ⁇ k linear )
- a closed loop structure is used and the structure is adapted for enhancing at least one and advantageously a plurality or more advantageously all of the radiation beams in the closed loop structure.
- open structures or open loop structures are envisaged.
- the system furthermore comprises an outcoupling radiation propagation portion, e.g. a waveguide, for coupling out an idler radiation beam generated in the bent structure.
- the material used may be any type of material providing a uniform material, i.e. a uniform quadratically nonlinear material, a uniform Raman-active and/or uniform Kerr-nonlinear material.
- a uniform material i.e. a uniform quadratically nonlinear material, a uniform Raman-active and/or uniform Kerr-nonlinear material.
- One example of a material that could be used is silicon, but there exist many other materials that could also be employed. Other materials having the same crystal structure as silicon typically also can be used.
- silicon nitride SiN
- crystalline materials belonging to the m3m point-symmetry group or a similar symmetry group for example other semiconductors such as germanium, GaAs, InGaAs, diamond, and other crystals such as Ba(NO 3 ) 2 , CaCO 3 , NaNO 3 , tungstate crystals, BaF 2 , potassium titanyl phosphate (KTP), potassium dihydrogen phosphate (KDP), LiNbO 3 , deuterated potassium dihydrogen phosphate (DKDP), lithium triborate (LBO), barium borate (BBO), bismuth triborate (BIBO), LiIO 3 , BaTiO 3 , yttrium iron garnet (YIG) crystals, AlGaAs, CdTe, AgGaS 2 , KTiOAsO 4 (KTA), ZnGeP 2 (ZGP), RBTiOAsO 4 (RTA) Also silicon covered by a thin semiconductors such as germanium, GaAs,
- the structure may be made in a plurality of ways. It may be processed on a substrate, it may be fabricated using different techniques such as CMOS technology, electron beam lithography, photolithography, chemical vapour deposition (CVD), low-pressure chemical vapour deposition (LPCVD), pulsed laser deposition (PLD), plasma enhanced chemical vapour deposition (PECVD), thermal oxidation, reactive-ion etching, focused ion beam, crystal growth, epitaxial growth, sputtering, flux pulling method from a stoichiometric melt, and polishing.
- CVD chemical vapour deposition
- LPCVD low-pressure chemical vapour deposition
- PLD pulsed laser deposition
- PECVD plasma enhanced chemical vapour deposition
- thermal oxidation reactive-ion etching
- focused ion beam crystal growth
- epitaxial growth epitaxial growth
- sputtering flux pulling method from a stoichiometric melt, and polishing.
- the system comprises a first and second radiation sources for generating a pump radiation beam and a signal radiation beam.
- radiation sources typically may be lasers, although embodiments of the present invention are not limited thereto.
- the type of lasers selected may depend on the application. Some examples of lasers that could be used are semiconductor lasers, solid-state lasers, fiber lasers, gas lasers, . . . .
- the required output power and wavelength of e.g. the pump laser depends on the output that one wants to obtain, e.g. of the output power one expect from the converter or amplifier.
- the system also may comprise a controller for controlling the system, e.g. the first radiation source and the second radiation source, and environmental conditions of the system, so as to be able to slightly tune the system.
- a heating and/or cooling means e.g. heater and/or cooler, may be present for controlling the temperature of the system and in this way also properties of the system.
- the controller may be adapted so that defined conditions for obtaining cavity-enhanced quasi-phase-matched SFG, cavity-enhanced quasi-phase-matched DFG, or cavity-enhanced quasi-phase-matched FWM, such as a well-controlled temperature, are maintained in the system.
- a controller may operate in an automated and/or automatic way.
- the controller may be implementing predetermined rules or a predetermined algorithm for controlling the system, or it may be adapted for using a neural network for controlling the system.
- the controller may comprise a memory for storing data and a processor for performing the steps as required for controlling.
- the controller may be computer implemented. Whereas in the present aspect, the controller is described as a component of the system, in one aspect, the present invention also relates to a controller as such for performing a method of controlling a system for operating in quasi-phase-matched SFG conditions, quasi-phase-matched DFG conditions, or quasi-phase-matched FWM conditions.
- the system also may comprise a feedback system, providing parameters for checking whether the appropriate conditions are fulfilled and for reporting corresponding information.
- a feedback system providing parameters for checking whether the appropriate conditions are fulfilled and for reporting corresponding information.
- Such information may for example be transferred to the controller and used by the controller for adjusting or correcting the conditions.
- the resonator, converter or amplifier is adapted for providing a given polarization mode. It thereby is an advantage that no filter means is required for obtaining the polarization mode, as the polarization mode is not altered by the structure.
- the material used has a uniform Raman-active medium for the Raman-resonant FWM process and a uniform Kerr-nonlinear medium for Kerr-induced FWM process, with respect to a laboratory reference system coupled to the system.
- the fourth rank Raman tensor and the fourth rank Kerr tensor that are uniform in the laboratory frame, are position dependent in a reference frame defined by the direction of propagation and the polarization.
- this approach can also be used for any other Raman-active medium with the same crystal symmetry as silicon, for any other Kerr-nonlinear medium with the same crystal symmetry as silicon, and for some Raman-active media and/or Kerr-nonlinear media with a crystal symmetry similar to that of silicon.
- crystals can be used, some examples of which are SiN, germanium, GaAs, InGaAs, diamond, Ba(NO 3 ) 2 , CaCO 3 , NaNO 3 , tungstate crystals, BaF 2 , potassium titanyl phosphate (KTP), potassium dihydrogen phosphate (KDP), LiNbO 3 , deuterated potassium dihydrogen phosphate (DKDP), lithium triborate (LBO), barium borate (BBO), bismuth triborate (BIBO), LiIO 3 , BaTiO 3 , yttrium iron garnet (YIG) crystals.
- KTP potassium titanyl phosphate
- KDP potassium dihydrogen phosphate
- LiNbO 3 deuterated potassium dihydrogen phosphate
- DKDP deuterated potassium dihydrogen phosphate
- LBO lithium triborate
- BBO barium borate
- BIBO bismuth triborate
- LiIO 3 BaTiO 3
- YIG y
- FIG. 1H to 1J A system according to such embodiments is illustrated by way of example in FIG. 1H to 1J .
- the spiral-shaped waveguide is a spiral-shaped silicon-on-insulator (SOI) waveguide covered by a uniform sheet of graphene through which an electric current is flowing. Because of the electric current, the graphene top sheet acquires a strong second-order nonlinearity, and the waves propagating in the spiral-shaped waveguide feel the presence of this second-order nonlinearity due to the interaction of their evanescent tails with the graphene top layer.
- SOI silicon-on-insulator
- This second-order nonlinearity is uniform with respect to a laboratory reference system coupled to the system.
- the second-order nonlinearity tensor that is uniform in the laboratory frame, is position dependent in a reference frame defined by the direction of propagation and the polarization. This leads to a spatial periodic variation of the second-order susceptibility around the spiral, and this variation can be used to design a spiral with QPM SFG or a spiral with QPM DFG.
- this approach can also be used for any other quadratically nonlinear medium with the same crystal symmetry as graphene through which an electric current is flowing, and for some quadratically nonlinear media with a crystal symmetry similar to that of graphene through which an electric current is flowing.
- crystals can be used, some examples of which are SiN, GaAs, InGaAs, Ba(NO 3 ) 2 , CaCO 3 , NaNO 3 , tungstate crystals, BaF 2 , potassium titanyl phosphate (KTP), potassium dihydrogen phosphate (KDP), LiNbO 3 , deuterated potassium dihydrogen phosphate (DKDP), lithium triborate (LBO), barium borate (BBO), bismuth triborate (BIBO), LiIO 3 , BaTiO 3 , yttrium iron garnet (YIG) crystals, AlGaAs, CdTe, AgGaS 2 , KTiOAsO 4 (KTA), ZnGeP 2 (ZGP), RBTiOAsO 4 (RTA).
- KTP potassium titanyl phosphate
- KDP potassium dihydrogen phosphate
- LiNbO 3 deuterated potassium dihydrogen phosphate
- DIKDP lithium triborate
- BBO bar
- the amplifier or converter according to embodiments of the present invention may also provide the functionality of a resonator, embodiments not being limited thereto.
- a resonator By way of illustration, embodiments of the present invention not being limited thereto, the present invention now will be further illustrated with reference to particular embodiments, illustrating some features and advantages of embodiments according to the present invention. Without wishing to be bound by theory, a mathematical suggestion of how the principles of embodiments of the present invention could be explained also is provided.
- a QPM Raman-resonant FWM system based on a silicon ring resonator.
- the system of the example shown thereby is not only adapted for QPM Raman-resonant FWM, but also illustrates that advantageously use can be made of cavity enhancement effects and of the free choice of the waveguide geometry when using quasi-phase matching.
- the function ⁇ ( ⁇ ) will be specified further on.
- the terms containing e j ⁇ k linear ⁇ express the Raman-resonant FWM interaction, and the terms proportional to
- 2 A ⁇ i,p ⁇ describe two accompanying Raman processes.
- the Raman gain coefficient g R of silicon equals 20 ⁇ 10 ⁇ 9 cm/W.
- the free carrier lifetime ⁇ eff will be as short as 500 ps. Because of the oblong core of the nanowire, TM fields generated through spontaneous Raman scattering in the ring are for the large part coupled out after each roundtrip, and cannot build up in the ring.
- the enhancement factor I i,out ring /I i,out 1D for the QPM ring converter with losses included compared to the one-dimensional PPM converter without losses thus equals 3.5 ⁇ 10 3 , which is very large.
- the idler output intensity of a QPM silicon ring Raman converter can easily become 3 ⁇ 10 3 times larger than that of a one-dimensional PPM Raman converter of equal length. Taking into account the quadratic dependence of the latter's output on the pump input, this also implies that the QPM ring Raman converter needs a 50 times smaller pump input intensity than the one-dimensional PPM Raman converter to produce the same idler output.
- signal-to-idler conversion efficiencies larger than unity can be obtained using relatively low pump input intensities.
- FIG. 3 shows the steady-state conversion efficiencies I i,out /I s,in at the different pump levels for the QPM and PPM devices.
- FIG. 3 shows that at pump input powers up to 7 mW the PPM CARS converter has higher conversion efficiencies than the QPM CARS device, whereas for higher pump powers the QPM converter outperforms the PPM converter.
- the conversion efficiency of the PPM device saturates at a value of ⁇ 3 dB for a pump power of 5 mW, whereas that of the QPM converter continues to grow for increasing pump power, exceeding a value of +3 dB at a pump power level of 20 mW.
- the QPM converter can outperform the PPM converter by as much as 6 dB.
- FIG. 3 shows that starting from pump powers as low as 11 mW the QPM device can establish conversion efficiencies larger than 0 dB.
- the best-performing silicon Raman converter demonstrated thus far is a channel waveguide converter that, when excited with extremely high-energy pump pulses with peak intensities of 2 ⁇ 10 13 W/m 2 , produces a signal-to-idler conversion efficiency of 58% or ⁇ 2.4 dB, it is found that the QPM ring converter presented here could considerably outperform this record demonstration both in terms of conversion efficiency and in terms of minimizing the required pump input intensity. This is partially due to the fact that the QPM ring device can benefit from cavity enhancement in the ring which the channel waveguide converter cannot, and partially because of the non-traditional quasi-phase-matching mechanism itself, which appears in the ring made of uniform silicon provided that the ring circumference is properly chosen.
- the device since for a QPM Raman ring converter the nanowire geometry can be chosen such that the FCA losses are minimal, the device should, when considering actual converter operation with losses included, substantially outperform a PPM Raman ring converter based on a dispersion-engineered nanowire of the type presented earlier in the literature. It is remarked that the latter comparison holds provided that both devices are fabricated using the low-cost intrinsic silicon-on-insulator platform without carrier-extracting p-i-n diodes. Furthermore, the QPM Raman ring converter should significantly outperform the best-performing silicon Raman converter demonstrated thus far, as it is able to establish signal-to-idler conversion efficiencies larger than 0 dB at modest pump powers. Such high performance, combined with the fact that no dispersion engineering is required and that the device can be realized in the low-cost intrinsic silicon-on-insulator platform, show the potentialities of QPM Raman wavelength conversion in silicon rings.
- a QPM Kerr-induced FWM system based on a silicon ring resonator.
- the system of the example shown thereby is not only adapted for QPM Kerr-induced FWM, but also illustrates that advantageously use can be made of cavity enhancement effects and that efficient conversion can be established for a large pump-signal frequency shift in a spectral domain where the dispersion characteristics of the silicon waveguide are not optimally engineered for PPM Kerr-induced FWM.
- the condition for QPM Kerr-induced FWM in the ring is given by 35 EMBED Equation. DSMT4
- ⁇ k linear ⁇ 2 ( ⁇ ) 2 one finds that this quasi-phase-matching condition can be fulfilled even if the pump-signal frequency shift is large and if one works in a spectral domain where the dispersion characteristics of the silicon waveguide are not optimally engineered for PPM Kerr-induced FWM.
- the relation ⁇ k linear ⁇ 2 ( ⁇ ) 2 also indicates that, for a given value of R, the quasi-phase-matching condition (1) can be fulfilled for different combinations of ⁇ 2 and ⁇ .
- the quasi-phase-matching condition expressed above complies with the condition for having the pump field, the signal field and the idler field at ring resonances.
- the fact that efficient non-traditional quasi-phase-matching can be combined with cavity enhancement for all three fields in the ring resonator is an important advantage, since for Kerr-induced FWM with “phase-matched operation” one can obtain cavity enhancement for all three fields only if the pump wavelength is close to the ZDW, i.e. only if one has PPM operation. Otherwise one has CLD operation in a doubly-resonant condition rather than in a triply-resonant condition.
- FIG. 5 parts (a)-(c) show the steady-state distributions along the ring of the pump, signal and idler intensities, respectively, as obtained by numerically solving equations (6) to (9) for this converter.
- I i,out 5 ⁇ 10 4 W/m 2 .
- FIG. 6 parts (a)-(c) show the steady-state distributions along the ring of the pump, signal and idler intensities, respectively, as obtained by numerically solving Eqs. (6)-(9) for this converter.
- n 2 0 of silicon along the [011] direction equals approximately 8 ⁇ 10 ⁇ 14 cm 2 /W.
- the nanowire under consideration has a height of 516 nm and a width of 775 nm and has an oxide cladding.
- the reason for taking a fixed pump input power is that in this comparison the pump-power-dependent nonlinear losses are negligible for both of the converters.
- the steady-state distributions along the ring of the pump, signal and idler intensities in the QPM (CLD) converter are shown in FIG. 8 ( FIG. 9 ).
- 8.4 ⁇ m.
- the QPM parametric converter is able to outperform the CLD parametric converter by as much as 10 dB.
- the QPM parametric conversion method offers a feasible and competitive solution when efficient conversion needs to be achieved in the presence of a large-valued ⁇ k linear , i.e. in the presence of a large-valued GVD at the pump wavelength and/or a large frequency difference between pump and signal.
- the predicted QPM parametric conversion efficiencies of the order of ⁇ 33 dB, ⁇ 29 dB, and ⁇ 26.7 dB in the near- and mid-infrared spectral domains are high enough to generate microwatts of idler output power, which is a sufficiently high power level for the considered application domains such as spectroscopy.
- this QPM parametric conversion method only offers efficient conversion for one specific set of pump, signal, and idler wavelengths, as the ring circumference has to be chosen in function of the phase mismatch between these wavelengths.
- the use of the QPM parametric conversion method presented here should be considered in the following context: in case one works with relatively small wavelength spacings yielding moderate
- a QPM SFG system based on a spiral-shaped silicon waveguide covered by a graphene sheet through which an electrical current is flowing.
- the performance is calculated for a QPM SFG system based on a spiral-shaped silicon waveguide covered by a graphene sheet.
- a modeling formalism for SFG converters is introduced. Without restricting the general validity of the results, focus is made on quasi-continuous-wave operation.
- the equations expressing the steady-state spatial variation of the slowly-varying pump, signal and idler field amplitudes A p ( ⁇ ), A s ( ⁇ ) A i ( ⁇ ) in the parametric SFG-based converter are given by:
- ⁇ defined as the angle between the local field polarization and the direction of the current flow.
- the terms in Eqs. (10)-(12) containing e j ⁇ k linear ⁇ express the actual SFG interaction.
- the coefficients ⁇ ⁇ p,s,i ⁇ represent the optical losses in the graphene-covered silicon waveguide. These receive contributions from linear propagation losses, two-photon absorption (TPA) and TPA-induced free carrier absorption.
- FIG. 10 shows the distribution along the spiral for the idler intensity.
- ⁇ defined as the angle between the local field polarization and the direction of the current flow.
- the terms in Eqs. (13)-(15) containing e j ⁇ k linear ⁇ express the actual DFG interaction.
- the coefficients ⁇ ⁇ p,s,i ⁇ represent the optical losses in the graphene-covered silicon waveguide. These receive contributions from linear propagation losses, two-photon absorption (TPA) and TPA-induced free carrier absorption.
- ⁇ p 1.25 ⁇ m
- the system may have a structure as illustrated in FIG. 1J .
- the relatively small effective free carrier absorption efficiency is due to the fact that at the considered pump wavelength only the graphene sheet contributes to free carrier generation, and only a small fraction of these free carriers effectively diffuse to the silicon waveguide.
- FIG. 11 shows the distribution along the spiral for the idler intensity.
- the output idler intensity emerging from the spiral I i,out thus equals 4.6 ⁇ 10 4 W/m 2 corresponding to a DFG efficiency I i,out /I s,in of ⁇ 36 dB over a propagation distance of only 380 ⁇ m.
- FIG. 11 shows an oscillating build up typical for QPM and similarly to the QPM Raman converter and QPM Kerr converter presented in, respectively, embodiments 1 and 2.
- the QPM concept yields also for the DFG converter considered here performance advantages compared to other phase-matching techniques.
- Such a method comprises receiving a pump radiation beam and a signal radiation beam in a bent structure, a waveguiding portion of the bent structure being made of a uniform nonlinear optical material and the dimensions of the bent structure being selected for obtaining QPM nonlinear optical wave mixing.
- the method also comprises obtaining an idler radiation beam by interaction of the pump radiation beam and the signal radiation beam using at least one QPM nonlinear optical process such as for example a QPM SFG, a QPM DFG, a QPM Raman-resonant FWM or QPM Kerr-induced FWM process.
- the method furthermore encloses coupling out an idler radiation beam from the bent structure.
- Other or more detailed method steps may be present, expressing the functionality of components of the system as described above.
- the present invention also relates to a method for designing a converter or amplifier using QPM nonlinear optical wave mixing.
- the converter or amplifier thereby may be using a pump radiation beam and a signal radiation beam.
- the method for designing comprises selecting a bent structure suitable for QPM nonlinear optical wave mixing, comprising selecting a uniform material for a radiation propagation portion of the bent structure, e.g. a waveguide, and selecting dimensions of the bent structure taking into account the spatial variation of the nonlinear optical susceptibility along the structure as experienced by radiation travelling along the bent structure. At least one dimension of the bent structure are selected such that QPM nonlinear optical wave mixing is obtained.
- At least one dimension of the radiation propagation portion of the bent structure is selected taking into account the spatial variation of the nonlinear optical susceptibility along the radiation propagation structure as experienced by radiation travelling along the bent structure for obtaining quasi-phase matched nonlinear optical wave mixing in the radiation propagation portion.
- the dimension may be substantially inverse proportional with the linear phase mismatch for the nonlinear optical wave mixing.
- the method for designing furthermore may be adapted so that the structure provides cavity enhancement for at least one of the radiation beams that will travel in the system, i.e. for which the system is designed, preferably more or all of the radiation beams are cavity enhanced.
- FIG. 12 shows one configuration of processing system 500 that includes at least one programmable processor 503 coupled to a memory subsystem 505 that includes at least one form of memory, e.g., RAM, ROM, and so forth.
- the processor 503 or processors may be a general purpose, or a special purpose processor, and may be for inclusion in a device, e.g., a chip that has other components that perform other functions.
- the processing system may include a storage subsystem 507 that has at least one disk drive and/or CD-ROM drive and/or DVD drive.
- a display system, a keyboard, and a pointing device may be included as part of a user interface subsystem 509 to provide for a user to manually input information. Ports for inputting and outputting data also may be included. More elements such as network connections, interfaces to various devices, and so forth, may be included, but are not illustrated in FIG. 12 .
- the memory of the memory subsystem 505 may at some time hold part or all (in either case shown as 501 ) of a set of instructions that when executed on the processing system 500 implement the steps of the method embodiments described herein.
- a bus 513 may be provided for connecting the components.
- the present invention also includes a computer program product which provides the functionality of any of the methods according to the present invention when executed on a computing device.
- Such computer program product can be tangibly embodied in a carrier medium carrying machine-readable code for execution by a programmable processor.
- the present invention thus relates to a carrier medium carrying a computer program product that, when executed on computing means, provides instructions for executing any of the methods as described above.
- carrier medium refers to any medium that participates in providing instructions to a processor for execution. Such a medium may take many forms, including but not limited to, non-volatile media, and transmission media.
- Non-volatile media includes, for example, optical or magnetic disks, such as a storage device which is part of mass storage.
- Computer readable media include, a CD-ROM, a DVD, a flexible disk or floppy disk, a tape, a memory chip or cartridge or any other medium from which a computer can read.
- Various forms of computer readable media may be involved in carrying one or more sequences of one or more instructions to a processor for execution.
- the computer program product can also be transmitted via a carrier wave in a network, such as a LAN, a WAN or the Internet.
- Transmission media can take the form of acoustic or light waves, such as those generated during radio wave and infrared data communications. Transmission media include coaxial cables, copper wire and fibre optics, including the wires that comprise a bus within a computer.
Abstract
Description
Δk linear=2k p −k s −k i
where k{p,s,a}=ω{p,s,a}×n{p,s,a}/c are wave numbers with n{p,s,a} representing the effective indices of the pump, signal and idler waves, respectively. One can also write Δklinear as Δklinear=−β2(Δω)2−1/12β4(Δω)4 where β2=d2k/dω2 is the Group velocity dispersion (GVD) at the pump wavelength, β4=d4k/dω4 is the fourth-order dispersion at the pump wavelength, and Δω is the frequency difference between the pump and signal waves. For SFG the linear part Δklinear of the phase mismatch is given by
Δk linear =k p +k s −k t
Δk linear =k p −k s −k i
Δk linear =k p +k s −k i for SFG,
Δk linear =k p −k s −k i for DFG, and Δk linear=2k p −k s −k i for Raman-resonant FWM and Kerr FWM.
with s being a factor equal to +1 or −1 so that R has a positive value, and Δklinear being linear phase mismatch for Raman-resonant FWM or being the linear phase mismatch for Kerr-induced FWM. The radius R of the circular ring structure may be determined by the radius R being substantially equal to a factor s, equal to +1 or −1, times one divided by the linear phase mismatch for SFG or divided by the linear phase mismatch for DFG, i.e. it substantially fulfills relation
with s being a factor equal to +1 or −1 so that R has a positive value, and Δklinear being linear phase mismatch for SFG or being the linear phase mismatch for DFG. With substantially being equal to or substantially fulfilling the relation there is meant that advantageously the radius is equal or the relation is fulfilled, but that a deviation on the design rule is allowed wherein the quasi-phase-matched SFG efficiency, quasi-phase-matched DFG efficiency or quasi-phase-matched FWM efficiency is still high due to the explored effects. E.g. for a deviation of 5% on the design rule—this is a value which certainly lies within the fabrication tolerances that can be achieved nowadays—a quasi-phase-matched nonlinear optical wave mixing efficiency of 0.8 times the maximal efficiency at zero deviation may still be guaranteed. For a deviation of 10% on the design rule, a quasi-phase-matched nonlinear optical wave mixing efficiency of 0.5 times the maximal efficiency at zero deviation may still be guaranteed. For a deviation of 20% on the design rule, a quasi-phase-matched nonlinear optical wave mixing efficiency of 0.3 times the maximal efficiency at zero deviation may still be guaranteed. For deviations larger than 25% on the design rule, the quasi-phase-matched efficiency might become smaller than 0.2 times the maximal efficiency at zero deviation, and the quasi-phase-matching approach might not be interesting any longer.
with s being a factor equal to +1 or −1 so that R has a positive value, and Δklinear being the linear phase mismatch for SFG or being the linear phase mismatch for DFG. With substantially fulfilling the relation there is meant that advantageously the relation is fulfilled, but that a deviation on the design rule is allowed wherein the quasi-phase-matched SFG efficiency or quasi-phase-matched DFG efficiency is still high due to the explored effects.
with s being a factor equal to +1 or −1 so that R has a positive value, and Δklinear being the linear phase mismatch for Raman-resonant FWM or being the linear phase mismatch for Kerr-induced FWM. With substantially fulfilling the relation there is meant that advantageously the relation is fulfilled, but that a deviation on the design rule is allowed wherein the quasi-phase-matched FWM efficiency is still high due to the explored effects.
where s=±1 so that R has a positive value, and R is the ring radius in case of a circular ring. Important to know is that even if this quasi-phase-matching condition is not exactly fulfilled, for example due to small deviations of R, the quasi-phase-matching efficiency will still be high.
where s=±1 so that R has a positive value, and R is the average radius of the spiral. Important to know is that even if this quasi-phase-matching condition is not exactly fulfilled, for example due to small deviations of R, the quasi-phase-matching efficiency will still be high.
where ζ=Rθ and A{p,s,i} is normalized such that |A{p,s,i}|2 corresponds to intensity. The function ρ(θ) will be specified further on. The terms containing ejΔk
with j=p,s,i, with the positions of the fields (1)-(4) indicated in
where s=±1 so that R has a positive value, and R is the ring radius in case of a circular ring. Taking into account that Δklinear≈−β2(Δω)2, one finds that this quasi-phase-matching condition can be fulfilled even if the pump-signal frequency shift is large and if one works in a spectral domain where the dispersion characteristics of the silicon waveguide are not optimally engineered for PPM Kerr-induced FWM. Furthermore, the relation Δklinear≈−β2(Δω)2 also indicates that, for a given value of R, the quasi-phase-matching condition (1) can be fulfilled for different combinations of β2 and Δω. Thus, for a ring resonator with a ring radius R and with a properly designed, non-constant dispersion profile, one can convert via QPM Kerr-induced FWM a fixed signal frequency ωs to various idler frequencies ωi spread over the near- and mid-infrared range, by changing only the pump frequency ωp. Finally, if R is chosen to be small to keep the device compact, one finds that Δω can be large also if β2 is large.
where ζ=Rθ, γ(θ)=n2 0ξKρ(θ)(ωp/c) is the effective nonlinearity, n2 0 is the Kerr-nonlinear refractive index along the [011] direction, ξK=5/4, and A{p,s,i} is normalized such that |A{p,s,i}|2 corresponds to intensity. The function ρ(θ) will be specified further on. The first terms containing the square brackets at the right hand side of Eqs. (6)-(8) correspond to Kerr-induced self- and cross-phase modulation, and the terms containing ejΔk
with j=p,s,i, with the positions of the fields (1)-(4) indicated in
where ζ represents the propagation distance along the spiral, deff is the effective second-order nonlinearity, and A{p,s,i} is normalized such that 2ε0n{p,s,i}c|A{p,s,i}|2 corresponds to intensity. The function ρ(θ) defines the variation of the second-order susceptibility along the graphene-covered silicon spiral as experienced by the TE-polarized fields, and is, as specified earlier on, given by ρ(θ)=cos θ with θ defined as the angle between the local field polarization and the direction of the current flow. The terms in Eqs. (10)-(12) containing ejΔk
When sending a current density of 103 A/m through the graphene sheet, deff˜100×10−12 m/V. For the remaining device parameters the following values were taken: waveguide modal area Aeff=0.5 μm2, linear loss α=50 dB/cm, effective two-photon absorption coefficient β=25×10−11 m/W, effective free carrier absorption efficiency φ=6×10−12, effective free carrier lifetime τeff=0.5 ns, Ip,in=2×1011 W/m2. It is pointed out that the relatively small effective free carrier absorption efficiency is due to the fact that at the considered pump wavelength only the graphene sheet contributes to free carrier generation, and only a small fraction of these free carriers effectively diffuse to the silicon waveguide. One then can numerically solve equations (10) to (12) for the QPM SFG converter.
i.e. it can also work effectively for pump and idler wavelengths not exactly equal to but around 2.34 μm and 1.17 μm, respectively. In a fourth particular embodiment, reference is made to a QPM DFG system based on a spiral-shaped silicon waveguide covered by a graphene sheet through which an electrical current is flowing. In this embodiment the performance is calculated for a QPM DFG system based on a spiral-shaped silicon waveguide covered by a graphene sheet. To do this, first a modeling formalism for DFG converters is introduced. Without restricting the general validity of the results, focus is made on quasi-continuous-wave operation. The equations expressing the steady-state spatial variation of the slowly-varying pump, signal and idler field amplitudes Ap(ζ), As(ζ), Ai(ζ) in the parametric DFG-based converter are given by:
where ζ represents the propagation distance along the spiral, deff is the effective second-order nonlinearity, and A{p,s,i} is normalized such that 2ε0n{p,s,i}c|A{p,s,i}|2 corresponds to intensity. The function ρ(θ) defines the variation of the second-order susceptibility along the graphene-covered silicon spiral as experienced by the TE-polarized fields, and is, as specified earlier on, given by ρ(θ)=cos θ with θ defined as the angle between the local field polarization and the direction of the current flow. The terms in Eqs. (13)-(15) containing ejΔk
When sending a current density of 103 A/m through the graphene sheet, deff˜100×10−12 m/V. For the remaining device parameters the following values were taken: waveguide modal area Aeff=0.5 μm2, linear loss α=50 dB/cm, effective two-photon absorption coefficient β=25×10−11 m/W, effective free carrier absorption efficiency φ=6×10−12, effective free carrier lifetime τeff=0.5 ns, Ip,in=2×1011 W/m2, Is,in=2×108 W/m2. As in
it can also work effectively for pump, signal and idler wavelengths not exactly equal to but around 1.25 μm, 2.1 μm, and 3.088 μm, respectively.
Claims (20)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/494,658 US9223187B2 (en) | 2010-03-18 | 2014-09-24 | Methods and systems for nonlinear optical wave-mixing |
PCT/EP2015/072049 WO2016046349A1 (en) | 2014-09-24 | 2015-09-24 | System for nonlinear optical wave-mixing |
EP15771078.1A EP3198337A1 (en) | 2014-09-24 | 2015-09-24 | System for nonlinear optical wave-mixing |
US15/469,097 US9915852B2 (en) | 2014-09-24 | 2017-03-24 | Systems for nonlinear optical wave-mixing |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US31519210P | 2010-03-18 | 2010-03-18 | |
PCT/EP2010/064750 WO2011113499A1 (en) | 2010-03-18 | 2010-10-04 | Methods and systems for converting or amplifying |
US201213635454A | 2012-09-17 | 2012-09-17 | |
US14/494,658 US9223187B2 (en) | 2010-03-18 | 2014-09-24 | Methods and systems for nonlinear optical wave-mixing |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2010/064750 Continuation-In-Part WO2011113499A1 (en) | 2010-03-18 | 2010-10-04 | Methods and systems for converting or amplifying |
US13/635,454 Continuation-In-Part US8873133B2 (en) | 2010-03-18 | 2010-10-04 | Bent structures and resonators with quasi-phase-matched four-wave-mixing and methods for converting or amplifying light |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2015/072049 Continuation WO2016046349A1 (en) | 2014-09-24 | 2015-09-24 | System for nonlinear optical wave-mixing |
Publications (2)
Publication Number | Publication Date |
---|---|
US20150015937A1 US20150015937A1 (en) | 2015-01-15 |
US9223187B2 true US9223187B2 (en) | 2015-12-29 |
Family
ID=52276871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/494,658 Expired - Fee Related US9223187B2 (en) | 2010-03-18 | 2014-09-24 | Methods and systems for nonlinear optical wave-mixing |
Country Status (1)
Country | Link |
---|---|
US (1) | US9223187B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9915852B2 (en) * | 2014-09-24 | 2018-03-13 | Vrije Universiteit Brussel | Systems for nonlinear optical wave-mixing |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9261754B2 (en) * | 2013-12-13 | 2016-02-16 | Telefonaktiebolaget L M Ericsson (Publ) | Parallel and WDM silicon photonics integration in information and communications technology systems |
JPWO2020240676A1 (en) * | 2019-05-27 | 2020-12-03 | ||
WO2020240793A1 (en) * | 2019-05-30 | 2020-12-03 | 日本電信電話株式会社 | Wavelength conversion element |
US11640099B2 (en) | 2020-02-11 | 2023-05-02 | Saudi Arabian Oil Company | High temperature high pressure (HTHP) cell in sum frequency generation (SFG) spectroscopy for liquid/liquid interface analysis |
US11366091B2 (en) | 2020-02-11 | 2022-06-21 | Saudi Arabian Oil Company | High temperature high pressure (HTHP) cell in sum frequency generation (SFG) spectroscopy for oil/brine interface analysis with reservoir conditions and dynamic compositions |
CN113948944B (en) * | 2021-10-15 | 2024-04-09 | 复旦大学 | Method for generating coherent terahertz pulse based on resonance four-wave mixing |
US11668643B1 (en) | 2021-12-10 | 2023-06-06 | Saudi Arabian Oil Company | High temperature high pressure (HTHP) cell in sum frequency generation (SFG) spectroscopy for oil/brine interface analysis with salinity control system |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040233511A1 (en) * | 2003-05-22 | 2004-11-25 | Kurz Jonathan R. | Apparatus and method for quasi-phase-matched nonlinear frequency mixing between different transverse width modes |
US20060092500A1 (en) | 2002-06-28 | 2006-05-04 | Andrea Melloni | Four-wave-mixing based optical wavelength converter device |
US20060132901A1 (en) * | 2004-12-17 | 2006-06-22 | Miller Gregory D | Optical power combining for optical frequency conversion having nonlinear feedback |
US20060159398A1 (en) | 2004-12-16 | 2006-07-20 | Knox Wayne H | Method and optical fiber device for production of low noise continuum |
US7200308B2 (en) | 2005-06-28 | 2007-04-03 | California Institute Of Technology | Frequency conversion with nonlinear optical polymers and high index contrast waveguides |
US7532656B2 (en) | 2005-02-16 | 2009-05-12 | The Trustees Of Columbia University In The City Of New York | All-silicon raman amplifiers and lasers based on micro ring resonators |
-
2014
- 2014-09-24 US US14/494,658 patent/US9223187B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060092500A1 (en) | 2002-06-28 | 2006-05-04 | Andrea Melloni | Four-wave-mixing based optical wavelength converter device |
US20040233511A1 (en) * | 2003-05-22 | 2004-11-25 | Kurz Jonathan R. | Apparatus and method for quasi-phase-matched nonlinear frequency mixing between different transverse width modes |
US20060159398A1 (en) | 2004-12-16 | 2006-07-20 | Knox Wayne H | Method and optical fiber device for production of low noise continuum |
US20060132901A1 (en) * | 2004-12-17 | 2006-06-22 | Miller Gregory D | Optical power combining for optical frequency conversion having nonlinear feedback |
US7532656B2 (en) | 2005-02-16 | 2009-05-12 | The Trustees Of Columbia University In The City Of New York | All-silicon raman amplifiers and lasers based on micro ring resonators |
US7200308B2 (en) | 2005-06-28 | 2007-04-03 | California Institute Of Technology | Frequency conversion with nonlinear optical polymers and high index contrast waveguides |
Non-Patent Citations (8)
Title |
---|
Database Inspec (Online) The Institution of Electrical Engineers, Stevenage, GB; Turner A C et al: "Ultra-low power parametric frequency conversion in a silicon microring resonator" vol. 16, No. 7, pp. 4881-4887 (Mar. 26, 2008). |
Database Inspec (Online) The Institution of Electrical Engineers, Stevenage, GB; Vermeulen et al: "Applications of coherent anti-Stokes Raman scattering in silicon photonics" whole document & Silicon Photonics V 24-27, San Francisco, CA, USA; vol. 7606 (Jan. 24, 2010). |
Database Inspec (Online) The Institution of Electrical Engineers, Stevenage, GB; Vermeulen et al: "Cavity-enhanced quasi-phase-matched wavelength conversion in silicon ring resonators: Two approaches" whole document & 2010 IEEE Photonics Society Summer Topical Meeting Series, Playa Del Carmen, Mexico; pp. 92-93 vol. 7719 (Jul. 19, 2010). |
Database Inspec (Online) The Institution of Electrical Engineers, Stevenage, GB; Vermeulen et al: "Enhancing the efficiency of silicon Raman converters" whole document & Silicon Photonics and Photonic Integrated Circuits II, Brussels, Belgium vol. 7719 (Apr. 12, 2010). |
Ferrera M et al: "Low power parametric wave-mixing in a zero dispersive CMOS compatible micro-ring resonator", Leos Annual Meeting Conference Proceedings; pp. 481-482 Piscataway, NJ (Oct. 4, 2009). |
International Search Report for PCT/EP2010/064750, Jan. 14, 2011 (4 pages). |
IPRP and Written Opinion for PCT/EP2010/064750, Sep. 18, 2012 (6 pages). |
Yang Z et al: "Enhanced Second-Harmonic Generation in ALGAAS Microring Resonators" Optics Letter, OSA, Optical Society of America, Washington DC, US, vol. 32, No. 7, pp. 826-828 (Apr. 1, 2007). |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9915852B2 (en) * | 2014-09-24 | 2018-03-13 | Vrije Universiteit Brussel | Systems for nonlinear optical wave-mixing |
Also Published As
Publication number | Publication date |
---|---|
US20150015937A1 (en) | 2015-01-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8873133B2 (en) | Bent structures and resonators with quasi-phase-matched four-wave-mixing and methods for converting or amplifying light | |
Boes et al. | Lithium niobate photonics: Unlocking the electromagnetic spectrum | |
US9223187B2 (en) | Methods and systems for nonlinear optical wave-mixing | |
US9915852B2 (en) | Systems for nonlinear optical wave-mixing | |
Qi et al. | Integrated lithium niobate photonics | |
Wang et al. | Integrated photon-pair sources with nonlinear optics | |
Wang et al. | Second harmonic generation in nano-structured thin-film lithium niobate waveguides | |
Vazimali et al. | Applications of thin-film lithium niobate in nonlinear integrated photonics | |
Kuo et al. | Second-harmonic generation using-quasi-phasematching in a GaAs whispering-gallery-mode microcavity | |
Roland et al. | Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks | |
US7339718B1 (en) | Generation of terahertz radiation in orientation-patterned semiconductors | |
Driscoll et al. | Width-modulation of Si photonic wires for quasi-phase-matching of four-wave-mixing: experimental and theoretical demonstration | |
Zheng et al. | Nonlinear wave mixing in lithium niobate thin film | |
Fathpour | Heterogeneous nonlinear integrated photonics | |
Gallo et al. | Analysis of lithium niobate all-optical wavelength shifters for the third spectral window | |
Caspani et al. | Optical frequency conversion in integrated devices | |
He et al. | Nonlinear nanophotonic devices in the ultraviolet to visible wavelength range | |
Brès et al. | Supercontinuum in integrated photonics: generation, applications, challenges, and perspectives | |
Liu et al. | Aluminum nitride photonic integrated circuits: from piezo-optomechanics to nonlinear optics | |
Lu et al. | Second and cascaded harmonic generation of pulsed laser in a lithium niobate on insulator ridge waveguide | |
Wang et al. | High-Q lithium niobate microcavities and their applications | |
De Leonardis et al. | Investigation of electric field induced mixing in silicon micro ring resonators | |
Zlatanovic et al. | Mid-infrared wavelength conversion in silicon waveguides pumped by silica-fiber-based source | |
Xie et al. | Picojoule threshold, picosecond optical parametric generation in reverse proton-exchanged lithium niobate waveguides | |
Busacca et al. | Parametric conversion in micrometer and submicrometer structured ferroelectric crystals by surface poling |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: VRIJE UNIVERSITEIT BRUSSEL, BELGIUM Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:VERMEULEN, NATHALIE;SIPE, JOHN EDWARD;THIENPONT, HUGO JEAN ARTHUR;SIGNING DATES FROM 20141117 TO 20141121;REEL/FRAME:034374/0835 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YR, SMALL ENTITY (ORIGINAL EVENT CODE: M2551); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY Year of fee payment: 4 |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20231229 |