US8451394B2 - Liquid crystal display device and manufacturing method therefor - Google Patents
Liquid crystal display device and manufacturing method therefor Download PDFInfo
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- US8451394B2 US8451394B2 US12/799,163 US79916310A US8451394B2 US 8451394 B2 US8451394 B2 US 8451394B2 US 79916310 A US79916310 A US 79916310A US 8451394 B2 US8451394 B2 US 8451394B2
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Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
(2) The liquid crystal display device according to (1) above, wherein the TFT electrode includes a passivation layer, and said passivation layer is formed on said source electrode or said drain electrode.
(3) The liquid crystal display device according to (2) above, wherein said passivation layer is a silicon nitride (SiNx) layer.
(4) The liquid crystal display device according to (2) above, wherein said passivation layer is a silicon oxide (SiOx) layer or a silicon nitrided oxide (SiNyOx) layer.
(5) The liquid crystal display device according to (2) above, wherein the passivation layer is an organic layer.
(6) The liquid crystal display device according to (1) above, wherein a semiconductor layer in the TFT electrode is in an ohmic contact with said source electrode or said drain electrode.
(7) The liquid crystal display device according to (1) above, wherein a pixel electrode in the TFT electrode is in an ohmic contact with said source electrode or said drain electrode.
(8) The liquid crystal display device according to (1) above, wherein said pixel electrode consists of Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), or Indium Tin Zinc Oxide (ITZO).
(9) The liquid crystal display device according to (1) above, wherein the oxide contains Manganese mainly and Copper subsidiarily.
(10) The liquid crystal display device according to (1) above, wherein the oxide has a compositional formula of CuXMnYSiZO (0<X<Y, 0<Z<Y).
(11) The liquid crystal display device according to (1) above, wherein the layer mainly consisting copper is formed from a copper alloy, and an additive element in the copper alloy is Manganese.
(12) The liquid crystal display device according to (11) above, wherein an additive amount of said Manganese is in a range of 0.5 to 25 atomic %.
(13) The liquid crystal display device according to (1) above, wherein the oxide contains Copper (Cu) and Silicon (Si).
(14) The liquid crystal display device wherein a TFT electrode of a Thin Film Transistor (TFT) substrate has a structure in which a source electrode or a drain electrode located between a semiconductor layer and a passivation layer, the source electrode or the drain electrode consisting of a first layer that includes copper mainly and a second layer consisting an oxide covering an outer circumferential part of the first layer, wherein, the second layer has a compositional formula of CuXMnYSiZO (0<X<Y, 0<Z<Y).
(15) The liquid crystal display device according to (14) above, wherein the first layer is formed from a copper alloy, and an additive element in the copper alloy is at least one metal selected from the group consisting of Mn, Zn, Ga, Li, Ge, Sr, Ag, In, Sn, Ba, Pr, and Nd and a combination of two or more thereof.
(16) The liquid crystal display device according to (14) above, wherein the first layer is formed from a copper alloy and an additive element in the copper alloy is Manganese (Mn).
(17) The liquid crystal display device according to (16) above, wherein an additive amount of said Mn is in a range of 0.5 to 25 atomic %.
(18) The liquid crystal display device according to (14) above, wherein the second layer contains Manganese mainly and Copper subsidiarily.
(19) The liquid crystal display device according to (14) above, wherein said second layer contains Copper (Cu) and Silicon (Si).
(20) A method for manufacturing a liquid crystal display device consisting of a source electrode or a drain electrode on a TFT substrate, the method consisting of the step of thermally treating a copper alloy layer mainly consisting of copper at approximately 150° C. to approximately 400° C., wherein an additive element of said copper alloy reacts with a silicon oxide in a glass and forms an oxide covering an outer circumferential part of said copper alloy layer.
(21) The method for manufacturing a liquid crystal display device according to (20) above, wherein the oxide covering an outer circumferential part of the copper alloy layer has a thickness of 1 to 30 nm.
(22) An organic Electro Luminescent (EL) display device wherein a TFT electrode on a TFT substrate has a structure in which a source electrode or a drain electrode held between a semiconductor layer and a passivation layer, and the source electrode or the drain electrode consists of a first layer that includes a copper mainly and a second layer consisting of an oxide covering an outer circumferential part of the first layer, wherein the second layer has a compositional formula of CuXMnYSiZO (0<X<Y, 0<Z<Y).
(23) The organic Electro Luminescent (EL) display device according to (22) above, wherein the first layer is formed from a copper alloy, and an additive element in the copper alloy is at least one metal selected from the group consisting of Mn, Zn, Ga, Li, Ge, Sr, Ag, In, Sn, Ba, Pr, and Nd and a combination of two or more thereof.
(24) The organic Electro Luminescent (EL) display device according to (22) above, wherein the first layer is formed from a copper alloy and an additive element in the copper alloy is Manganese.
(25) The organic Electro Luminescent (EL) display device according to (22) above, wherein an additive amount of said Manganese is in a range of 0.5 to 25 atomic %.
Component | Content (%) | ||
SiO2 | 49.0 | ||
Al2O3 | 11.0 | ||
B2O3 | 15.0 | ||
Metal (i.e. Fe) | 25.0 | ||
Alkali | — | ||
TABLE 1 |
Tape test results of Cu and Cu/Mn double layered film on an insulation film SiO2 |
Material | Thermal treatment temperature (° C.) |
(thickness: nm) | 150° C. | 200° C. | 250° C. | 300° C. | 350° C. | 400° C. | 450° C. |
Cu (150 nm) | X | X | X | X | X | X | X |
Cu(150)/Mn(2)stacked layer | Δ | ◯ | ◯ | ◯ | ◯ | ◯ | ◯ |
Cu(150)/Mn(20) stacked layer | Δ | ◯ | ◯ | ◯ | ◯ | ◯ | ◯ |
◯: Good adhesiveness | |||||||
X: Separation (poor adhesiveness) | |||||||
Δ: Partial Separation |
TABLE 2 |
Thickness of formed oxide film layer |
Atomic | Thermal treatment | ||
concentration in | temperature | ||
CuMn alloy | Thermal treatment | (° C.) |
(at · %) | time (minute) | 350° C. | 450° C. |
10% | 20 min | 3.2 nm | 6.1 |
20% | 30 min | — | 8.2 nm |
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