US7696013B2 - Connecting microsized devices using ablative films - Google Patents

Connecting microsized devices using ablative films Download PDF

Info

Publication number
US7696013B2
US7696013B2 US11/737,187 US73718707A US7696013B2 US 7696013 B2 US7696013 B2 US 7696013B2 US 73718707 A US73718707 A US 73718707A US 7696013 B2 US7696013 B2 US 7696013B2
Authority
US
United States
Prior art keywords
die
microsized
channel
electrical
ablative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related, expires
Application number
US11/737,187
Other versions
US20080258313A1 (en
Inventor
M. Zaki Ali
A. Peter Stolt
Gilbert A. Hawkins
Thomas M. Stephany
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Priority to US11/737,187 priority Critical patent/US7696013B2/en
Assigned to EASTMAN KODAK COMPANY reassignment EASTMAN KODAK COMPANY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: STEPHANY, THOMAS M., HAWKINS, GILBERT A., ALI, M. ZAKI, STOLT, A. PETER
Priority to PCT/US2008/004406 priority patent/WO2008130493A2/en
Priority to CN200880012539A priority patent/CN101681851A/en
Priority to EP08742558A priority patent/EP2147463A2/en
Priority to JP2010504047A priority patent/JP2010527509A/en
Publication of US20080258313A1 publication Critical patent/US20080258313A1/en
Priority to US12/635,747 priority patent/US20100112758A1/en
Priority to US12/635,750 priority patent/US20100109168A1/en
Publication of US7696013B2 publication Critical patent/US7696013B2/en
Application granted granted Critical
Assigned to CITICORP NORTH AMERICA, INC., AS AGENT reassignment CITICORP NORTH AMERICA, INC., AS AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: EASTMAN KODAK COMPANY, PAKON, INC.
Assigned to WILMINGTON TRUST, NATIONAL ASSOCIATION, AS AGENT reassignment WILMINGTON TRUST, NATIONAL ASSOCIATION, AS AGENT PATENT SECURITY AGREEMENT Assignors: EASTMAN KODAK COMPANY, PAKON, INC.
Assigned to BANK OF AMERICA N.A., AS AGENT reassignment BANK OF AMERICA N.A., AS AGENT INTELLECTUAL PROPERTY SECURITY AGREEMENT (ABL) Assignors: CREO MANUFACTURING AMERICA LLC, EASTMAN KODAK COMPANY, FAR EAST DEVELOPMENT LTD., FPC INC., KODAK (NEAR EAST), INC., KODAK AMERICAS, LTD., KODAK AVIATION LEASING LLC, KODAK IMAGING NETWORK, INC., KODAK PHILIPPINES, LTD., KODAK PORTUGUESA LIMITED, KODAK REALTY, INC., LASER-PACIFIC MEDIA CORPORATION, NPEC INC., PAKON, INC., QUALEX INC.
Assigned to BARCLAYS BANK PLC, AS ADMINISTRATIVE AGENT reassignment BARCLAYS BANK PLC, AS ADMINISTRATIVE AGENT INTELLECTUAL PROPERTY SECURITY AGREEMENT (SECOND LIEN) Assignors: CREO MANUFACTURING AMERICA LLC, EASTMAN KODAK COMPANY, FAR EAST DEVELOPMENT LTD., FPC INC., KODAK (NEAR EAST), INC., KODAK AMERICAS, LTD., KODAK AVIATION LEASING LLC, KODAK IMAGING NETWORK, INC., KODAK PHILIPPINES, LTD., KODAK PORTUGUESA LIMITED, KODAK REALTY, INC., LASER-PACIFIC MEDIA CORPORATION, NPEC INC., PAKON, INC., QUALEX INC.
Assigned to JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE reassignment JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE INTELLECTUAL PROPERTY SECURITY AGREEMENT (FIRST LIEN) Assignors: CREO MANUFACTURING AMERICA LLC, EASTMAN KODAK COMPANY, FAR EAST DEVELOPMENT LTD., FPC INC., KODAK (NEAR EAST), INC., KODAK AMERICAS, LTD., KODAK AVIATION LEASING LLC, KODAK IMAGING NETWORK, INC., KODAK PHILIPPINES, LTD., KODAK PORTUGUESA LIMITED, KODAK REALTY, INC., LASER-PACIFIC MEDIA CORPORATION, NPEC INC., PAKON, INC., QUALEX INC.
Assigned to EASTMAN KODAK COMPANY, PAKON, INC. reassignment EASTMAN KODAK COMPANY RELEASE OF SECURITY INTEREST IN PATENTS Assignors: CITICORP NORTH AMERICA, INC., AS SENIOR DIP AGENT, WILMINGTON TRUST, NATIONAL ASSOCIATION, AS JUNIOR DIP AGENT
Assigned to FAR EAST DEVELOPMENT LTD., CREO MANUFACTURING AMERICA LLC, KODAK AVIATION LEASING LLC, KODAK AMERICAS, LTD., KODAK REALTY, INC., KODAK IMAGING NETWORK, INC., PAKON, INC., KODAK PORTUGUESA LIMITED, KODAK PHILIPPINES, LTD., FPC, INC., LASER PACIFIC MEDIA CORPORATION, EASTMAN KODAK COMPANY, KODAK (NEAR EAST), INC., NPEC, INC., QUALEX, INC. reassignment FAR EAST DEVELOPMENT LTD. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Assigned to FAR EAST DEVELOPMENT LTD., KODAK IMAGING NETWORK, INC., KODAK (NEAR EAST), INC., KODAK PHILIPPINES, LTD., LASER PACIFIC MEDIA CORPORATION, KODAK REALTY, INC., KODAK AVIATION LEASING LLC, KODAK AMERICAS, LTD., QUALEX, INC., CREO MANUFACTURING AMERICA LLC, PFC, INC., NPEC, INC., PAKON, INC., EASTMAN KODAK COMPANY, KODAK PORTUGUESA LIMITED reassignment FAR EAST DEVELOPMENT LTD. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Assigned to NPEC INC., KODAK REALTY INC., KODAK AMERICAS LTD., FAR EAST DEVELOPMENT LTD., KODAK PHILIPPINES LTD., LASER PACIFIC MEDIA CORPORATION, QUALEX INC., KODAK (NEAR EAST) INC., FPC INC., EASTMAN KODAK COMPANY reassignment NPEC INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: BARCLAYS BANK PLC
Assigned to ALTER DOMUS (US) LLC reassignment ALTER DOMUS (US) LLC INTELLECTUAL PROPERTY SECURITY AGREEMENT Assignors: EASTMAN KODAK COMPANY
Assigned to ALTER DOMUS (US) LLC reassignment ALTER DOMUS (US) LLC INTELLECTUAL PROPERTY SECURITY AGREEMENT Assignors: EASTMAN KODAK COMPANY
Assigned to ALTER DOMUS (US) LLC reassignment ALTER DOMUS (US) LLC INTELLECTUAL PROPERTY SECURITY AGREEMENT Assignors: EASTMAN KODAK COMPANY
Assigned to BANK OF AMERICA, N.A., AS AGENT reassignment BANK OF AMERICA, N.A., AS AGENT NOTICE OF SECURITY INTERESTS Assignors: EASTMAN KODAK COMPANY
Expired - Fee Related legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261Processes for packaging MEMS devices
    • B81C1/00301Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1258Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by using a substrate provided with a shape pattern, e.g. grooves, banks, resist pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00Microstructural systems or auxiliary parts thereof
    • B81B2207/09Packages
    • B81B2207/091Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/098Arrangements not provided for in groups B81B2207/092 - B81B2207/097
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4864Cleaning, e.g. removing of solder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/113Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1131Manufacturing methods by local deposition of the material of the bump connector in liquid form
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241Disposition
    • H01L2224/24151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24226Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/244Connecting portions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2499Auxiliary members for HDI interconnects, e.g. spacers, alignment aids
    • H01L2224/24991Auxiliary members for HDI interconnects, e.g. spacers, alignment aids being formed on the semiconductor or solid-state body to be connected
    • H01L2224/24992Flow barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27Manufacturing methods
    • H01L2224/27011Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73217Layer and HDI connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/82009Pre-treatment of the connector or the bonding area
    • H01L2224/8203Reshaping, e.g. forming vias
    • H01L2224/82035Reshaping, e.g. forming vias by heating means
    • H01L2224/82039Reshaping, e.g. forming vias by heating means using a laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/821Forming a build-up interconnect
    • H01L2224/82101Forming a build-up interconnect by additive methods, e.g. direct writing
    • H01L2224/82102Forming a build-up interconnect by additive methods, e.g. direct writing using jetting, e.g. ink jet
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/82909Post-treatment of the connector or the bonding area
    • H01L2224/82951Forming additional members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009Pre-treatment of the layer connector or the bonding area
    • H01L2224/83051Forming additional members, e.g. dam structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9212Sequential connecting processes
    • H01L2224/92142Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92144Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01077Iridium [Ir]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09372Pads and lands
    • H05K2201/09472Recessed pad for surface mounting; Recessed electrode of component
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621Components characterised by their electrical contacts
    • H05K2201/10674Flip chip
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01Tools for processing; Objects used during processing
    • H05K2203/0104Tools for processing; Objects used during processing for patterning or coating
    • H05K2203/013Inkjet printing, e.g. for printing insulating material or resist
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05Patterning and lithography; Masks; Details of resist
    • H05K2203/0562Details of resist
    • H05K2203/0568Resist used for applying paste, ink or powder
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14Related to the order of processing steps
    • H05K2203/1461Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
    • H05K2203/1469Circuit made after mounting or encapsulation of the components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0026Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/107Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1241Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
    • H05K3/125Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/94Laser ablative material removal

Definitions

  • the invention relates generally to the field of microsized devices and in particular to processes providing connections to microsized devices, including processes based on the use of ablative films to connect a plurality of microsized devices to one another. More specifically, the invention relates to ablative means for providing fluidic, electrical, photonic, magnetic, and mechanical connections to microsized devices.
  • Microsized devices include, for example, micro-accelerometers and micro-gyroscopes for detecting linear and angular accelerations as manufactured by Analog Devices, Inc., chemically sensitive field effect transistors, used to detect the presence of certain molecular vapors such as carbon monoxide or ethanol, pressure sensors for measurement of pressures in automotive systems or micro phonic sensors, such as those employed in cell phones to detect and reproduce audio sounds, and optical sensors for detecting the presence of objects by infra-red radiation.
  • MST micro systems technology
  • connections may be of many different types, for example electrical, mechanical, or fluidic (vapor).
  • connections may be of many different types, for example electrical, mechanical, or fluidic (vapor).
  • the objects are small, many interconnected devices may be incorporated for systems applications.
  • connections must be made so as not to perturb their functionality, for example by mechanical stress, especially in the face of changes in external environment in which collections of devices are operated, such as temperature or humidity.
  • One means of depositing conductive lines is by depositing conductive fluids to fill channels made in polymer films, for example channels made by laser ablation of polymer films, hereinafter referred to as ablative films.
  • ablative films channels made in polymer films, for example channels made by laser ablation of polymer films, hereinafter referred to as ablative films.
  • microsized devices may then be placed proximate to the conductive lines; and connections, typically electrical, may be made using a variety of techniques, including wire-bonding, flip chip bonding, electroplating, and deposition of conductive materials, including deposition of conductive fluids by inkjet means, typically to ensure the reliable connection of electric leads to the devices or “die.”
  • the ablative film 5 includes a substrate 10 , typically a flexible polymer such as a polyamide or polycarbonate, and one or more energy-absorbing layers 20 which can be removed, all or in part, by exposure to intense radiation, or in other words, can be ablated, for example by radiation from a near IR laser.
  • a substrate 10 typically a flexible polymer such as a polyamide or polycarbonate
  • energy-absorbing layers 20 which can be removed, all or in part, by exposure to intense radiation, or in other words, can be ablated, for example by radiation from a near IR laser.
  • Ablative film compositions which can be removed by radiation from a near IR laser are disclosed, for example, by M. Zaki Ali, et al. in US Patent Publication 2005/0227182, which further contemplates using the ablative films, once ablated, as photolithographic masks for subsequent image wise ultraviolet exposure of flexography materials.
  • the ablative films described in US 2005/0227182 may contain additional layers which serve purposes other than of a substrate or of energy absorbing layers, for example release layers used in lamination and surface energy control layers for repelling liquids, so that the ablative films, once ablated, may serve a variety of purposes.
  • additional layers which serve purposes other than of a substrate or of energy absorbing layers, for example release layers used in lamination and surface energy control layers for repelling liquids, so that the ablative films, once ablated, may serve a variety of purposes.
  • Many other material types of polymeric ablative films and laser ablation processes are well known in the art of laser ablation and laser processing for the manufacture of patterns and structures. For example, U.S. Pat. No.
  • the ablative film 5 includes a substrate 10 , and multiple layers 30 , some of which are energy absorbing layers. These layers can be removed, all or in part, by exposure to intense radiation. Other layers may provide desired colors or surface properties, such as hydrophobicity, or may comprise release layers to allow separation of the layers, and may be removed (ablated) when nearby underlying or overlying energy absorbing layers absorb radiation.
  • FIGS. 2 a - 2 b there is illustrated in cross-section and top-view, respectively, prior art formation of a channel 40 in an ablative film 5 of FIG. 1 a .
  • the ablative film 5 includes the two energy-absorbing layers 20 and the substrate 10 as described above.
  • the base 50 of the channel 40 may be altered by the ablation process, for example its surface may be rendered hydrophilic.
  • ablative films subsequent to patterning by ablation, are those relying on the geometry and surface properties of the ablated film to confine deposited fluids, such as fluids containing conductive materials such as metallic particulates. These fluids are typically deposited by well-known techniques such as ink-jetting or immersion in fluid baths followed by removal, for example by mechanical wiping blades, of excess fluid not in the ablative channels.
  • FIG. 2 c there is illustrated in cross-section a prior art process for forming an electrically conductive material 60 in an ablated channel 40 in the ablative film 5 .
  • the conductor 60 may be formed by jetting (preferably by inkjet printing means) a liquid containing a metallic precursor into the channel 40 and then annealing the liquid to form the conductor 60 .
  • the conductor 60 as commercialized, for example by Dimatix, Inc. and Cabot Corporation.
  • the deposition of conductors in channels formed in polymeric films has further been employed to connect together microsized devices electrically, for example by positioning microsized devices on the top surface of polymer films having conductors patterned in channels or on the film surface, the positioning means being one of mechanical placement or, alternatively self assembly, as practiced by Alien Technologies, Inc.
  • the microsized devices are positioned in an approximate way near the conductors and then one or more conductive metal strips are deposited which extend from the microsized device(s) to the conductor(s) to establish electrical connections.
  • Methods of self-aligned positioning include alignment by matching geometrical features built into both the microsized devices and the substrate or the use of chemical constituents deposited pattern wise on the substrate which attract matching chemical constituents applied to the microsized devices as referenced in Sharma, et al., US Patent Publication 2006/0134799 and Sharma, et al., US Patent Publication 2006/0057293.
  • optically emitting diodes arrays may be so formed for display applications.
  • the present invention is directed to overcoming one or more of the problems set forth above.
  • the invention resides in a method of providing connectivity to a microsized device, the method comprising the steps of providing an ablative base material having at least a top surface; providing a die having a first and second surface and having bonding pads at least upon the first surface; placing the die with the at least first surface of the die contacting the at least top surface of the ablative base material; and ablating a channel in the ablative material proximate to the die.
  • the present invention has the following advantage of expanding use of ablative material to include having microsized devices thereon.
  • microsized devices may precede the patterning of the primary routes for connections to or between the devices, including mechanical, optical, magnetic, fluidic, or electrical.
  • connections may be combinations of the types above, achieved without substantial process complexity over the individual connection types.
  • the alignment of the microsized devices to the connections may be of a self-aligned nature without the complexity heretofore required of self-aligned connections to microsized devices.
  • FIG. 1 a is a cross-section of a prior art ablative film
  • FIG. 1 b is a cross-section of a prior art ablative film
  • FIGS. 2 a - 2 b illustrate in cross-section and top-view, respectively, prior art formation of a channel in an ablative film
  • FIG. 2 c illustrates in cross-section a prior art process for forming an electrically conductive material in an ablated channel in an ablative film
  • FIG. 2 d illustrates schematically in cross-section an embodiment of ablative film 70 of the present invention
  • FIG. 3 a - b shows top and cross-sectional views of the microsized device of the present invention having two contact regions
  • FIG. 3 c shows a top view of a microsized device having three contact regions
  • FIG. 3 d is an alternative embodiment of FIGS. 3 a - b showing a top view of a microsized device of the present invention having two contacts;
  • FIG. 3 e shows a cross-section of a microsized device (die) having a contact region (solid fill) partially extending from the top of the die over its left edge;
  • FIG. 4 a shows a view of a microsized device (die) having three contact regions (dotted lines) placed with its top-side down on the top surface of an ablative film;
  • FIG. 4 b shows a view of two microsized devices (die) having contact regions (dotted lines) placed top-side down on the top surface of an ablative film;
  • FIG. 4 c shows the two die of FIG. 4 b including channels formed by laser ablation of the ablative film extending to the contact regions;
  • FIGS. 4 d - 4 e illustrate a process for forming the channels of FIG. 4 c in a self-aligned manner to the die
  • FIGS. 5 a - 5 b illustrate deposition by inkjet printing means and by dropper or dipping means of a fluid, for example a conductive ink, into the ablated channels of FIG. 4 c , as is well known in the arts of inkjet printing and of fluid coating;
  • a fluid for example a conductive ink
  • FIG. 6 a illustrates one technique for removal of excess fluid deposition by dropper means of a fluid using a flexible blade
  • FIG. 6 b shows a cross-sectional view of a die, channel, and deposited fluid as in FIG. 2 d but in more detail;
  • FIG. 7 a - 7 c shows a cross-sectional view of a die, channel, and deposited fluid as in FIG. 2 d but in more detail for the case in which the connection to the die is a photonic connection;
  • FIG. 8 a - 8 c shows a cross-sectional view of a die, channel, and deposited fluid as in FIG. 2 d but in more detail for the case in which the connection to the die is a magnetic connection;
  • FIG. 9 a - 9 c shows a cross-sectional view of a die, channel, and deposited overlayer for the case in which the connection to the die is a fluidic connection;
  • FIG. 10 a - 10 f shows a cross-sectional view of a die, channel, and deposited overlayer for another exemplary case in which the connection to the die is a fluidic connection;
  • FIG. 11 a - 11 c shows a cross-sectional view of a die, channel, and channel material for another exemplary case in which the connection to the die is a mechanical connection;
  • FIG. 12 a - 12 b shows a top and cross-sectional view of a die, channel, and channel material for the case in which the connection to the die is remote, that is the material in the channel is close to the contact region of the die but not in physical contact;
  • FIG. 13 illustrates by top view multiple connections of multiple types, including connections of the electrical, photonic, magnetic, mechanical, and fluidic types, to multiple types of microsized devices, including devices that generate and respond to electrical, photonic, magnetic, mechanical, and fluidic signals.
  • Microsized means devices whose features critical to functionality are typically 1 to 100 microns in linear dimension and which are made in processes involving photolithographic exposure of layers of materials to be patterned by subsequent processing.
  • a micro-fluidic device means a microsized device whose principal functionality is the transport, analysis, and dispensation of fluid materials (gases and liquids) or information concerning the nature of the analyzed fluidic materials, such as, but not limited to sensors of chemical or biological materials and their physical and chemical properties.
  • Micro-fluidic microdevices may also receive information in analog or digital form including electrical or optical information and produce fluidic signals such as pressure changes or changes in chemical composition in fluid connections in analog or digital form as output.
  • a microsized photonic device receives, processes, and/or transmit information in the form of optical data, including trains of optical pulses, or analog input or output of light including wavelength optical signals and may respond to optical stimulation in a variety of ways, including electrical and mechanical output.
  • Optical microdevices may also receive information in analog or digital form including electrical or mechanical information and produce optical signals in analog or digital form as output.
  • Mechanical microsized devices are sensitive to and can produce mechanical stimuli in analog or digital form including quasi-static mechanical motion as well as acoustic waves and pulses and may a respond to mechanical stimulation in a variety of ways, including electrical and optical output.
  • Mechanical microdevices may also receive information in analog or digital form including electrical and optical information and produce mechanical or acoustical signals in analog or digital form as output.
  • Magnetic microdevices sense magnetic stimuli in analog or digital form including quasi-static magnetic fields as well as time varying fields and may respond to magnetic stimulation in a variety of ways, including producing electrical and optical output. Magnetic microdevices may also receive information in analog or digital form including electrical and optical information and produce magnetic signals in analog or digital form as output.
  • the ablative film 70 includes a substrate 80 and two energy-absorbing layers 75 in which a microsized device (die) 90 has been positioned on the top surface of the ablative film 70 and a self-aligned channel 100 is formed in proximity to one edge of the die 90 by laser ablation.
  • a microsized device die
  • energy absorbed in one or more energy absorbing layers 75 results in the removal of material from the energy-absorbing layer and, depending on the chemical nature of the surrounding layers, removal of material from adjacent layers.
  • the die 90 in FIG. 2 d is provided with one or more contact regions comprising metallic bond pads 110 on the side facing the ablative film.
  • a liquid 120 containing a metallic precursor has been jetted, for example by inkjet printing means, into the channel 100 .
  • a metallic precursor is a fluid which, when dried or annealed, is an electrical conductor, as is well know in the art of printed electronics.
  • the liquid 120 containing a metallic precursor in FIG. 2 d fills the channel 100 and has flowed under portions of the die 90 adjacent the channel, thereby providing, when annealed, an electrical and mechanical connection to the die 90 by direct contact to the metallic bond pad 110 .
  • the electrical connection to the die 90 is made simultaneously with the process of deposition of the fluid into channel 100 .
  • the microsized device 90 includes two contact regions 130 (disposed symmetrically) partially protected by protective layers 135 and having a raised support structure 140 between and along the sides of the contact regions 130 . Provision of the die 90 with support structure 140 is advantageous in making various types of connections to the die 90 , as will be described.
  • FIG. 3 c there is shown a top view of an alternative embodiment of the microsized device 90 (die) having three contact regions 130 partially protected by protective layers 135 and having a raised support structure 140 separating some of the contact regions 130 .
  • FIG. 3 d there is shown a top view of an alternative embodiment of the microsized device 90 (die) having two contact regions 130 (disposed non-symmetrically) partially protected by protective layers 135 and having a raised support structure 140 separating the contact regions.
  • the protective layers 135 do not extend to the edge of the die 90 in portions of the contact regions 130 in order to provide a more direct path for liquids subsequently deposited near the edge of the die 90 to flow to the contact regions 130 .
  • FIG. 3 e there is shown a cross-sectional view of an alternative embodiment of the microsized device 90 (die) having a contact region 130 disposed partially extending from the top of the die 90 over its left edge, in order to provide a more direct path for liquids subsequently deposited near the edge of the die 90 to flow to the contact regions 130 .
  • FIG. 3 d illustrates electrical connection to the die 90
  • the location of protective layer 135 as shown in FIG. 3 d and the use of the raised support structures 140 are useful in providing all types of contacts to the die 90 .
  • FIG. 4 a there is shown a top view of the microsized device 90 (die) having three contact regions 130 placed with its top-side down on the top surface of an ablative film 70 .
  • the die 90 has been lightly affixed to the ablative film 70 , for example by pressing into the film 70 under heat or by depositing a small amount of adhesive (not shown) to portions of the die 90 , for example to the raised support structure 140 (not visible in this top view as it lies adjacent the top surface of the substrate) separating some of the contact regions 130 .
  • the die 90 is not placed with precision; that is, the die center and the angle of the die 90 with respect to the ablative film 70 are not precisely controlled.
  • FIG. 4 b there is shown a view of two microsized devices 90 (die) having contact regions 130 placed top-side down on the top surface of an ablative film 70 .
  • the die 90 has been lightly affixed to the ablative film 70 , for example by pressing into the film 70 under heat or by depositing a small amount of adhesive to portions of the die 90 .
  • the die 90 are not placed with precision; that is, the die centers and the angles of the die 90 with respect to the ablative film 70 and to one another are not precisely controlled.
  • Channels 150 are preferably formed by laser ablation of the ablative film 70 extending to the contact regions 130 .
  • the channels 150 are formed in a manner such that the channel direction is aligned with the direction of the chip, that is, in FIG. 4 c , the channel 150 is formed perpendicular to the edge of the chip nearest the contact region 130 , despite the fact that the chip has been oriented at an angle to the edge of the ablative film 70 .
  • FIGS. 4 d - 4 e there is shown a process for forming the channels 150 of FIG. 4 c in a self-aligned manner to the die 90 .
  • FIGS. 4 d - 4 e illustrate the embodiment having two energy absorbing layers 75 covering the substrate 80
  • a single energy-absorbing layer is also generally adequate.
  • a scanned source of radiation for example a laser beam, ablates portions of the ablative film 70 until it reaches the edge of the die 90 where its energy is reflected away from the film 70 , thereby stopping formation of the channel 150 precisely at the die edge, regardless of the position and angle of orientation of the die 90 .
  • the positions of the non-precisely placed die 90 are detected with a camera and stored in a memory file.
  • This file is interrogated upon scanning the energy beams and used to control the scanner to move beams toward the desired locations on the die 90 (typically the locations of the contact pads and typically perpendicular to the edge of the chip nearest the contact region, despite the fact that the chip may be oriented at an angle to the edge of the ablative film 70 ).
  • the die 90 are principally supported by the raised support structure 140 separating the contact regions 130 so that there is some space between the contact region 130 and the top surface of the ablative film 70 .
  • FIGS. 5 a - 5 b there is illustrated deposition by inkjet printing means and by dropper or dipping means of a fluid 160 , for example a conductive ink 160 a (shown later), into the ablated channels 150 of FIG. 4 c , as is well known in the arts of inkjet printing and of fluid coating.
  • FIG. 5 a illustrates the process of dropping the conductive fluid 160 while it is actually occurring and
  • FIG. 5 b illustrates the final position of the deposited conductive fluid 160 which has been deposited by multiple drops.
  • the fluid typically hardens to form a solid, also denoted as 161 .
  • the shading of the figures does not differentiate between the fluid and the hardened fluid.
  • FIG. 6 a there is illustrated one technique for removal of excess fluid 161 deposition by dropper means of a fluid using a flexible blade 170 .
  • FIG. 6 b there is shown a cross-sectional view of the die 90 , channel 150 , and deposited fluid 161 as in FIG. 5 a but in more detail.
  • the fluid 161 has wicked underneath a portion of the die 90 and has made physical contact with the contact region 130 of the die 90 .
  • This embodiment illustrates the case in which the connection to the die 90 is an electrical connection.
  • an electrical connection can be formed from a deposited fluid 161 a if the fluid contains a metallic precursor or is an electrically conductive polymeric material.
  • the material in the channel 150 after annealing, is in electrical contact with contact region 130 a .
  • a connection so formed to the microsized device 90 enables the device to send and receive data in the form of digital or analog electrical signals. It is not necessary that the conductive material physically contact the contact region 130 a as long as it is closely disposed, as is well know in the art of dielectric current detection.
  • the contact regions 130 a in FIG. 6 b may include electrically responsive elements such as voltage or current sources or voltage or current detectors, well known in the art of MST devices.
  • the supportive structure 140 in FIG. 6 b aids wicking of the fluid 161 a to the contact region, since it ensures that there is space between the top surface of the ablative film and the protective coating 135 , as well as between the top surface of the ablative film and the contact region 130 a .
  • the supportive structure 140 in FIG. 6 b also helps prevent wicking of the fluid 161 a to the contact region 130 a on the right side of the die due to its contact with the top surface of the ablative film.
  • FIGS. 7 a - 7 c there is shown a cross-sectional view of the die 90 , channel 150 , and deposited fluid 160 as in FIG. 5 a but in more detail for the case in which the connection to the die 90 is a photonic connection.
  • the material 160 deposited in the channel 150 is optically transparent (designated by 161 b ).
  • the fluid 161 b has wicked underneath a portion of the die 90 and has made physical contact with the contact region 130 b of the die 90 .
  • the fluid 161 b is an optically transparent material, for example a polymer such as polycarbonate or benzo chlorohexal borene
  • the material 161 b in the channel 150 after hardening or annealing, is in optical contact with the contact region 130 b on the die.
  • the contact region 130 b comprises optically responsive elements, for example LED optical sources made from organic polymers, or photodetectors, made, for example, form deposited films such as ZnSe or doped silicon semiconductor junctions.
  • a connection so formed to the microsized device 90 enables the device to send and receive data in the form of digital or analog optical signals.
  • the supportive structure 140 in FIG. 7 c aids wicking of the fluid 161 b to the contact region on the left of the die, since it ensures that there is space between the top surface of the ablative film and the contact region 130 b .
  • the supportive structure 140 in FIG. 7 c additionally prevents wicking of the fluid to the contact region 130 b on the right side of the die due to its contact with the top surface of the ablative film.
  • electrical contacts 130 a may be disposed on the left portion of the die 90 and are connected as disclosed above.
  • FIGS. 8 a - 8 c there is shown a cross-sectional view of a die 90 , channel 150 , and deposited fluid 161 c as in FIG. 5 a but in more detail for the case in which the connection to the die 90 is a magnetic connection.
  • the material 161 c deposited in the channel 150 is a magnetically active material having a high magnetic permittivity (designated as 161 c ).
  • the fluid 161 c has wicked underneath a portion of the die 90 and has made physical contact with the contact regions 130 c of the die 90 , which regions are shown as a pair of channels which serve to conduct a magnetic field to and from a contact region 130 c which is sensitive to an applied field, for example, contact region 130 c could be a Hall type magnetic field sensor.
  • the fluid 161 c is a magnetically active material, for example iron or iron alloys
  • the material in the channel 150 after hardening or annealing, is in magnetic communication with the contact regions 130 c on the die 90 .
  • the contact regions 130 c comprise a magnetically responsive circuit, for example a Hall sensor, or, a source of magnetic fields, for example, a moveable mechanical transducer having a magnetic portion, as is well known in the art of MST devices.
  • a connection so formed to the microsized device 90 enables the device to send and receive data in the form of digital or analog magnetic signals. It is not necessary that the magnetically active material physically contact the contact regions 130 c as long as it is closely disposed to the contact regions 130 c , since a magnetic field can be sensed across a gap between the material and the field sensor.
  • FIGS. 9 a - 9 c there is shown a cross-sectional view of a microsized device or die 90 , channel 150 , and an overlying conformal laminate film 180 for the case in which the connection to the die 90 is a fluidic connection. It is noted in the figures that color does not differentiate a channel 150 which is empty and a channel which is filled with externally sampled fluid 161 d .
  • the contact region 130 d includes means responsive to the chemistry or rheology of the fluid 161 d present in the channel 150 , for example the contact region 130 d may be a chemically sensitive field effect transistor (CHEM-FET) sensitive (which is designated as 130 d ), for example, to the ionic content of the externally sampled fluid 160 d (for example a gas or liquid); or the contact region 130 d may be a conductivity detector, a humidity detector, a gas sensor, or a molecularly specific sensor such as a MIP resonator.
  • the contact region 130 d may also be a fluidic opening built into the microdevice itself, to convey fluids to the device for biological analysis or processing.
  • the microdevice may include pump means for drawing or dispensing the externally sampled fluid 161 d in the channels 150 .
  • Externally sampled fluids 160 d may include either liquids or gases.
  • the left portion of the die 90 may include electrical contacts 130 a which are connected as described above.
  • a sacrificial material may be placed in the channels 150 , for example a phase change liquid such as a wax may be deposited in the channels and hardened by cooling.
  • the sacrificial fluid 161 e may wick underneath a portion of the die 90 and make physical contact with the contact region 130 d of the die 90 .
  • a fluid sealant may then be coated, for example by dip or spray coating over the entire ablative film or at least the portion having die and channels, and the sacrificial material 161 e subsequently removed to form channels 150 for the externally sampled fluid 161 d .
  • the sacrificial material 161 e may be removed (indicated by 161 d ), for example, by chemical dissolution or by heating to vaporize the material.
  • a fluid channel 150 is formed in the ablative film in fluid communication with the contact region(s) of the die 90 .
  • a connection so formed to the microsized device enables the device 90 to respond to chemical content, for example the presence of salt in a fluid already present in the channel, or to fluid introduced and/or removed from the channel, as sensed, for example, by the pressure or the dielectric constant of the fluid.
  • the fluid is a gas
  • the sensor may detect molecular species such as ethane that diffuse or circulate in the channels.
  • FIGS. 10 a - 10 f there is shown a cross-sectional view of a die 90 , channel 150 , and deposited overlayer for another exemplary case in which the connection to the die 90 is a fluidic connection.
  • the contact region 130 is a fluidic opening built into the end of the microdevice itself, rather than an opening or a sensor defined on the surface of the device, to convey fluids to the device for biological analysis or processing.
  • the microdevice may include pump means for drawing or dispensing fluid in the channels 150 and data analysis means to analyze chemical or biological properties of fluids in the microdevice, such fluid functions being well known in the field of micro total analysis system.
  • FIGS. 10 a - 10 f there is shown a cross-sectional view of a die 90 , channel 150 , and deposited overlayer for another exemplary case in which the connection to the die 90 is a fluidic connection.
  • the contact region 130 is a fluidic opening built into the end of the microdevice itself, rather than an opening or a sensor
  • the fluidic channels are formed using the process of fluid deposition of a sacrificial material followed by coating of a sealing layer and then removal of the sacrificial material, as discussed above.
  • FIGS. 11 a - 11 c there is shown a cross-sectional view of a die 90 , channel 150 , and channel material 161 f for another exemplary case in which the connection to the die 90 is a mechanical connection.
  • the contact region 130 f is mechanically responsive and therefore capable of sensing or producing static motion of the channel material (strain) or sensing or producing oscillatory motion, i.e. acoustic waves.
  • Many microdevices are known in the art of MST technology, such as piezo cantilevers and electrostatic actuators, that are capable of all such functions.
  • FIG. 11 a - 11 c there is shown a cross-sectional view of a die 90 , channel 150 , and channel material 161 f for another exemplary case in which the connection to the die 90 is a mechanical connection.
  • the contact region 130 f is mechanically responsive and therefore capable of sensing or producing static motion of the channel material (strain) or sensing or producing oscillatory motion, i.e.
  • 11 a - 11 c provision is also included on the right of the microdevice for channel connections that are electrical in nature, as discussed in association with FIG. 6 a - 6 c .
  • the present invention envisions the use of multiple types of connections to and between multiple types of die, including connections of the electrical, photonic, magnetic, mechanical, and fluidic types.
  • FIGS. 12 a - 12 b there is shown a top and cross-sectional view of a die 90 , channel 150 , and channel material 160 for the case in which the connection to the die 90 is remote, that is the material in the channel 150 is close to the contact region 130 of the die 90 but not in physical contact.
  • FIG. 12 b which contemplates the case of a fluid 160 deposited in the channel 150 , no wicking of the fluid 160 has occurred under the die 90 . This may be accomplished by choosing the surface of the die 90 and the fluid 160 so that the interfacial surface tension is low and does not favor wicking, for example aqueous based fluids will not generally wick under a die that is Teflon coated.
  • the contact region 130 is still capable of sensing or receiving or sending electrical, photonic, magnetic, mechanical, and fluidic connections but at a reduced sensitivity.
  • Many microdevices are know in the art of MST, such as magnetic detectors and temperature sensors that can detect small changes in fields, produced by say a current flow depicted on the right side of FIG. 12 a , or by small changes in temperature, produced, say, by the flow of a warm fluid as depicted on the left side of FIG. 12 a.
  • FIG. 13 there is illustrated a top view of an ablative film 70 having multiple microsized devices with multiple connections of multiple types, including connections of the electrical, photonic, magnetic, mechanical, and fluidic types.
  • Such arrays of interconnected microsized devices including devices that generate and respond to electrical, photonic, magnetic, mechanical, and fluidic signals, function as microsystems, as is well known in the MST art.
  • the present invention contemplates that the connections are made to devices that are not precisely positioned on the ablative film.
  • Channels 150 can be formed in a self aligned manner by focused radiation (e.g.
  • the lasers by detecting, for example with a digital camera, the positions of the microsized devices, storing this information in a memory file, and using the information from such files to scan the focused radiation beams toward the desired locations on the die. (typically the locations of the contact pads).

Abstract

A method of providing connectivity to a microsized device, the method includes the steps of providing an ablative base material having at least a top surface; providing a die having a first and second surface and having bonding pads at least upon the first surface; placing the die with the at least first surface of the die contacting the at least first surface of the ablative base material; and ablating a channel in the ablative material proximate to the die.

Description

FIELD OF THE INVENTION
The invention relates generally to the field of microsized devices and in particular to processes providing connections to microsized devices, including processes based on the use of ablative films to connect a plurality of microsized devices to one another. More specifically, the invention relates to ablative means for providing fluidic, electrical, photonic, magnetic, and mechanical connections to microsized devices.
BACKGROUND OF THE INVENTION
Microsized devices include, for example, micro-accelerometers and micro-gyroscopes for detecting linear and angular accelerations as manufactured by Analog Devices, Inc., chemically sensitive field effect transistors, used to detect the presence of certain molecular vapors such as carbon monoxide or ethanol, pressure sensors for measurement of pressures in automotive systems or micro phonic sensors, such as those employed in cell phones to detect and reproduce audio sounds, and optical sensors for detecting the presence of objects by infra-red radiation. These and other microsized devices are well known to practitioners of micro systems technology (MST). Also well known in that art are the difficulties encountered in inexpensive packaging of such microsized devices, in part because their small sizes require accurate positioning of connections and also because the connections may be of many different types, for example electrical, mechanical, or fluidic (vapor). Because the objects are small, many interconnected devices may be incorporated for systems applications. Additionally, since the devices are small, connections must be made so as not to perturb their functionality, for example by mechanical stress, especially in the face of changes in external environment in which collections of devices are operated, such as temperature or humidity.
Previous means employed for the connection of microdevices have included the use of automated wire bonding apparatus, use of ball grid arrays technology, fabrication of special packages using materials having temperature matched expansion coefficients, and the use of packages encapsulating devices in inert or chemically controlled atmospheres. Although these techniques offer sophisticated solutions, their implementation is not without expense, as is well known, for example, in the case of the packaging of micromirror devices (MMD) as manufactured by Texas Instruments, Inc. More recently, lower cost solutions have become available for mounting and connecting arrays of microsized devices on polymer films, for example those using films on which are patterned conductive lines, which may be deposited by many techniques, including ink jet printing of fluids. Such fluids may be conductive as deposited or may become conductive upon subsequent processing, for example by thermal annealing. These films are typically flexible and therefore are less likely to perturb the functionality of the microsized devices by mechanical stress.
One means of depositing conductive lines, related to the present invention, is by depositing conductive fluids to fill channels made in polymer films, for example channels made by laser ablation of polymer films, hereinafter referred to as ablative films. As is well known in the art of MST, microsized devices may then be placed proximate to the conductive lines; and connections, typically electrical, may be made using a variety of techniques, including wire-bonding, flip chip bonding, electroplating, and deposition of conductive materials, including deposition of conductive fluids by inkjet means, typically to ensure the reliable connection of electric leads to the devices or “die.”
Referring to FIG. 1 a, there is shown a cross-section of a prior art ablative film 5. The ablative film 5 includes a substrate 10, typically a flexible polymer such as a polyamide or polycarbonate, and one or more energy-absorbing layers 20 which can be removed, all or in part, by exposure to intense radiation, or in other words, can be ablated, for example by radiation from a near IR laser. Ablative film compositions which can be removed by radiation from a near IR laser are disclosed, for example, by M. Zaki Ali, et al. in US Patent Publication 2005/0227182, which further contemplates using the ablative films, once ablated, as photolithographic masks for subsequent image wise ultraviolet exposure of flexography materials. The ablative films described in US 2005/0227182 may contain additional layers which serve purposes other than of a substrate or of energy absorbing layers, for example release layers used in lamination and surface energy control layers for repelling liquids, so that the ablative films, once ablated, may serve a variety of purposes. Many other material types of polymeric ablative films and laser ablation processes are well known in the art of laser ablation and laser processing for the manufacture of patterns and structures. For example, U.S. Pat. No. 7,115,514 by Richard Stoltz and assigned to Raydiance, Inc., describes a laser ablation process using short pulses at wavelengths shorter than the near IR are described for ablating a wide variety of materials including metals and inorganic materials and for altering their surfaces by ablation.
Referring to FIG. 1 b, there is shown a cross-section of another prior art ablative film 5 of a more complex structure. The ablative film 5 includes a substrate 10, and multiple layers 30, some of which are energy absorbing layers. These layers can be removed, all or in part, by exposure to intense radiation. Other layers may provide desired colors or surface properties, such as hydrophobicity, or may comprise release layers to allow separation of the layers, and may be removed (ablated) when nearby underlying or overlying energy absorbing layers absorb radiation.
Referring to FIGS. 2 a-2 b, there is illustrated in cross-section and top-view, respectively, prior art formation of a channel 40 in an ablative film 5 of FIG. 1 a. The ablative film 5 includes the two energy-absorbing layers 20 and the substrate 10 as described above. The base 50 of the channel 40 may be altered by the ablation process, for example its surface may be rendered hydrophilic.
Among the many known uses for ablative films, subsequent to patterning by ablation, are those relying on the geometry and surface properties of the ablated film to confine deposited fluids, such as fluids containing conductive materials such as metallic particulates. These fluids are typically deposited by well-known techniques such as ink-jetting or immersion in fluid baths followed by removal, for example by mechanical wiping blades, of excess fluid not in the ablative channels. Referring to FIG. 2 c, there is illustrated in cross-section a prior art process for forming an electrically conductive material 60 in an ablated channel 40 in the ablative film 5. For example, the conductor 60 may be formed by jetting (preferably by inkjet printing means) a liquid containing a metallic precursor into the channel 40 and then annealing the liquid to form the conductor 60. The conductor 60, as commercialized, for example by Dimatix, Inc. and Cabot Corporation.
The deposition of conductors in channels formed in polymeric films has further been employed to connect together microsized devices electrically, for example by positioning microsized devices on the top surface of polymer films having conductors patterned in channels or on the film surface, the positioning means being one of mechanical placement or, alternatively self assembly, as practiced by Alien Technologies, Inc. The microsized devices are positioned in an approximate way near the conductors and then one or more conductive metal strips are deposited which extend from the microsized device(s) to the conductor(s) to establish electrical connections. Methods of self-aligned positioning include alignment by matching geometrical features built into both the microsized devices and the substrate or the use of chemical constituents deposited pattern wise on the substrate which attract matching chemical constituents applied to the microsized devices as referenced in Sharma, et al., US Patent Publication 2006/0134799 and Sharma, et al., US Patent Publication 2006/0057293. For example, optically emitting diodes arrays may be so formed for display applications.
Although such prior art techniques can provide useable arrays of interconnected devices, the process of placement of the microsized devices must be sufficiently accurate to allow for the cost effective provision of connections, for example connections made of conductive metal strips to establish electrical connections. Such accuracy is generally difficult to achieve for self-aligned processes and expensive to achieve by precision pick and place technologies. Moreover, the deposition of conductive strips is expensive; time consuming and problematic as to reliability if the connection is to be robust on flexible substrates. Additionally, such techniques are not generally applicable to connection types other than electrical, for example connections of the fluidic, magnetic, optical, or mechanical types or connections of mixed types.
SUMMARY OF THE INVENTION
The present invention is directed to overcoming one or more of the problems set forth above. Briefly summarized, according to one aspect of the present invention, the invention resides in a method of providing connectivity to a microsized device, the method comprising the steps of providing an ablative base material having at least a top surface; providing a die having a first and second surface and having bonding pads at least upon the first surface; placing the die with the at least first surface of the die contacting the at least top surface of the ablative base material; and ablating a channel in the ablative material proximate to the die.
ADVANTAGEOUS EFFECT OF THE INVENTION
The present invention has the following advantage of expanding use of ablative material to include having microsized devices thereon.
The placement of microsized devices may precede the patterning of the primary routes for connections to or between the devices, including mechanical, optical, magnetic, fluidic, or electrical.
The connections may be combinations of the types above, achieved without substantial process complexity over the individual connection types.
The alignment of the microsized devices to the connections may be of a self-aligned nature without the complexity heretofore required of self-aligned connections to microsized devices.
Records of the position and alignment of microsized devices are included in the manufacturing process.
These and other aspects, objects, features and advantages of the present invention will be more clearly understood and appreciated from a review of the following detailed description of the preferred embodiments and appended claims, and by reference to the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 a is a cross-section of a prior art ablative film;
FIG. 1 b is a cross-section of a prior art ablative film;
FIGS. 2 a-2 b illustrate in cross-section and top-view, respectively, prior art formation of a channel in an ablative film;
FIG. 2 c illustrates in cross-section a prior art process for forming an electrically conductive material in an ablated channel in an ablative film;
FIG. 2 d illustrates schematically in cross-section an embodiment of ablative film 70 of the present invention;
FIG. 3 a-b shows top and cross-sectional views of the microsized device of the present invention having two contact regions;
FIG. 3 c shows a top view of a microsized device having three contact regions;
FIG. 3 d is an alternative embodiment of FIGS. 3 a-b showing a top view of a microsized device of the present invention having two contacts;
FIG. 3 e shows a cross-section of a microsized device (die) having a contact region (solid fill) partially extending from the top of the die over its left edge;
FIG. 4 a shows a view of a microsized device (die) having three contact regions (dotted lines) placed with its top-side down on the top surface of an ablative film;
FIG. 4 b shows a view of two microsized devices (die) having contact regions (dotted lines) placed top-side down on the top surface of an ablative film;
FIG. 4 c shows the two die of FIG. 4 b including channels formed by laser ablation of the ablative film extending to the contact regions;
FIGS. 4 d-4 e illustrate a process for forming the channels of FIG. 4 c in a self-aligned manner to the die;
FIGS. 5 a-5 b illustrate deposition by inkjet printing means and by dropper or dipping means of a fluid, for example a conductive ink, into the ablated channels of FIG. 4 c, as is well known in the arts of inkjet printing and of fluid coating;
FIG. 6 a illustrates one technique for removal of excess fluid deposition by dropper means of a fluid using a flexible blade;
FIG. 6 b shows a cross-sectional view of a die, channel, and deposited fluid as in FIG. 2 d but in more detail;
FIG. 7 a-7 c shows a cross-sectional view of a die, channel, and deposited fluid as in FIG. 2 d but in more detail for the case in which the connection to the die is a photonic connection;
FIG. 8 a-8 c shows a cross-sectional view of a die, channel, and deposited fluid as in FIG. 2 d but in more detail for the case in which the connection to the die is a magnetic connection;
FIG. 9 a-9 c shows a cross-sectional view of a die, channel, and deposited overlayer for the case in which the connection to the die is a fluidic connection;
FIG. 10 a-10 f shows a cross-sectional view of a die, channel, and deposited overlayer for another exemplary case in which the connection to the die is a fluidic connection;
FIG. 11 a-11 c shows a cross-sectional view of a die, channel, and channel material for another exemplary case in which the connection to the die is a mechanical connection;
FIG. 12 a-12 b shows a top and cross-sectional view of a die, channel, and channel material for the case in which the connection to the die is remote, that is the material in the channel is close to the contact region of the die but not in physical contact; and
FIG. 13 illustrates by top view multiple connections of multiple types, including connections of the electrical, photonic, magnetic, mechanical, and fluidic types, to multiple types of microsized devices, including devices that generate and respond to electrical, photonic, magnetic, mechanical, and fluidic signals.
DETAILED DESCRIPTION OF THE INVENTION
Microsized means devices whose features critical to functionality are typically 1 to 100 microns in linear dimension and which are made in processes involving photolithographic exposure of layers of materials to be patterned by subsequent processing. A micro-fluidic device means a microsized device whose principal functionality is the transport, analysis, and dispensation of fluid materials (gases and liquids) or information concerning the nature of the analyzed fluidic materials, such as, but not limited to sensors of chemical or biological materials and their physical and chemical properties. Micro-fluidic microdevices may also receive information in analog or digital form including electrical or optical information and produce fluidic signals such as pressure changes or changes in chemical composition in fluid connections in analog or digital form as output. A microsized photonic device receives, processes, and/or transmit information in the form of optical data, including trains of optical pulses, or analog input or output of light including wavelength optical signals and may respond to optical stimulation in a variety of ways, including electrical and mechanical output. Optical microdevices may also receive information in analog or digital form including electrical or mechanical information and produce optical signals in analog or digital form as output. Mechanical microsized devices are sensitive to and can produce mechanical stimuli in analog or digital form including quasi-static mechanical motion as well as acoustic waves and pulses and may a respond to mechanical stimulation in a variety of ways, including electrical and optical output. Mechanical microdevices may also receive information in analog or digital form including electrical and optical information and produce mechanical or acoustical signals in analog or digital form as output. Magnetic microdevices sense magnetic stimuli in analog or digital form including quasi-static magnetic fields as well as time varying fields and may respond to magnetic stimulation in a variety of ways, including producing electrical and optical output. Magnetic microdevices may also receive information in analog or digital form including electrical and optical information and produce magnetic signals in analog or digital form as output.
Referring to FIG. 2 d, there is shown one embodiment of ablative film 70 of the present invention. The ablative film 70 includes a substrate 80 and two energy-absorbing layers 75 in which a microsized device (die) 90 has been positioned on the top surface of the ablative film 70 and a self-aligned channel 100 is formed in proximity to one edge of the die 90 by laser ablation. As is well known in the art of laser ablation, energy absorbed in one or more energy absorbing layers 75 results in the removal of material from the energy-absorbing layer and, depending on the chemical nature of the surrounding layers, removal of material from adjacent layers. The die 90 in FIG. 2 d is provided with one or more contact regions comprising metallic bond pads 110 on the side facing the ablative film. A liquid 120 containing a metallic precursor has been jetted, for example by inkjet printing means, into the channel 100. A metallic precursor is a fluid which, when dried or annealed, is an electrical conductor, as is well know in the art of printed electronics. The liquid 120 containing a metallic precursor in FIG. 2 d fills the channel 100 and has flowed under portions of the die 90 adjacent the channel, thereby providing, when annealed, an electrical and mechanical connection to the die 90 by direct contact to the metallic bond pad 110. Advantageously, the electrical connection to the die 90 is made simultaneously with the process of deposition of the fluid into channel 100.
Referring to FIGS. 3 a-3 b, there is shown top and cross-sectional views of the microsized device 90 (die). The microsized device 90 includes two contact regions 130 (disposed symmetrically) partially protected by protective layers 135 and having a raised support structure 140 between and along the sides of the contact regions 130. Provision of the die 90 with support structure 140 is advantageous in making various types of connections to the die 90, as will be described.
Referring to FIG. 3 c, there is shown a top view of an alternative embodiment of the microsized device 90 (die) having three contact regions 130 partially protected by protective layers 135 and having a raised support structure 140 separating some of the contact regions 130.
Referring to FIG. 3 d, there is shown a top view of an alternative embodiment of the microsized device 90 (die) having two contact regions 130 (disposed non-symmetrically) partially protected by protective layers 135 and having a raised support structure 140 separating the contact regions. The protective layers 135 do not extend to the edge of the die 90 in portions of the contact regions 130 in order to provide a more direct path for liquids subsequently deposited near the edge of the die 90 to flow to the contact regions 130.
Referring to FIG. 3 e, there is shown a cross-sectional view of an alternative embodiment of the microsized device 90 (die) having a contact region 130 disposed partially extending from the top of the die 90 over its left edge, in order to provide a more direct path for liquids subsequently deposited near the edge of the die 90 to flow to the contact regions 130. Although FIG. 3 d illustrates electrical connection to the die 90, the location of protective layer 135 as shown in FIG. 3 d and the use of the raised support structures 140 are useful in providing all types of contacts to the die 90.
Referring to FIG. 4 a, there is shown a top view of the microsized device 90 (die) having three contact regions 130 placed with its top-side down on the top surface of an ablative film 70. The die 90 has been lightly affixed to the ablative film 70, for example by pressing into the film 70 under heat or by depositing a small amount of adhesive (not shown) to portions of the die 90, for example to the raised support structure 140 (not visible in this top view as it lies adjacent the top surface of the substrate) separating some of the contact regions 130. Note the die 90 is not placed with precision; that is, the die center and the angle of the die 90 with respect to the ablative film 70 are not precisely controlled.
Referring to FIG. 4 b, there is shown a view of two microsized devices 90 (die) having contact regions 130 placed top-side down on the top surface of an ablative film 70. The die 90 has been lightly affixed to the ablative film 70, for example by pressing into the film 70 under heat or by depositing a small amount of adhesive to portions of the die 90. It is noted the die 90 are not placed with precision; that is, the die centers and the angles of the die 90 with respect to the ablative film 70 and to one another are not precisely controlled.
Referring to FIG. 4 c, there is shown the two die 90 of FIG. 4 b. Channels 150 are preferably formed by laser ablation of the ablative film 70 extending to the contact regions 130. The channels 150 are formed in a manner such that the channel direction is aligned with the direction of the chip, that is, in FIG. 4 c, the channel 150 is formed perpendicular to the edge of the chip nearest the contact region 130, despite the fact that the chip has been oriented at an angle to the edge of the ablative film 70.
Referring to FIGS. 4 d-4 e, there is shown a process for forming the channels 150 of FIG. 4 c in a self-aligned manner to the die 90. It is noted that although FIGS. 4 d-4 e illustrate the embodiment having two energy absorbing layers 75 covering the substrate 80, a single energy-absorbing layer is also generally adequate. A scanned source of radiation, for example a laser beam, ablates portions of the ablative film 70 until it reaches the edge of the die 90 where its energy is reflected away from the film 70, thereby stopping formation of the channel 150 precisely at the die edge, regardless of the position and angle of orientation of the die 90. If required, the positions of the non-precisely placed die 90 are detected with a camera and stored in a memory file. This file is interrogated upon scanning the energy beams and used to control the scanner to move beams toward the desired locations on the die 90 (typically the locations of the contact pads and typically perpendicular to the edge of the chip nearest the contact region, despite the fact that the chip may be oriented at an angle to the edge of the ablative film 70). It is noted that the die 90 are principally supported by the raised support structure 140 separating the contact regions 130 so that there is some space between the contact region 130 and the top surface of the ablative film 70.
Referring to FIGS. 5 a-5 b, there is illustrated deposition by inkjet printing means and by dropper or dipping means of a fluid 160, for example a conductive ink 160 a (shown later), into the ablated channels 150 of FIG. 4 c, as is well known in the arts of inkjet printing and of fluid coating. FIG. 5 a illustrates the process of dropping the conductive fluid 160 while it is actually occurring and FIG. 5 b illustrates the final position of the deposited conductive fluid 160 which has been deposited by multiple drops. As is well known in the art of conductive fluid, the fluid typically hardens to form a solid, also denoted as 161. Hereafter, the shading of the figures does not differentiate between the fluid and the hardened fluid.
Referring to FIG. 6 a, there is illustrated one technique for removal of excess fluid 161 deposition by dropper means of a fluid using a flexible blade 170.
Referring to FIG. 6 b, there is shown a cross-sectional view of the die 90, channel 150, and deposited fluid 161 as in FIG. 5 a but in more detail. In accordance with the present invention, the fluid 161 has wicked underneath a portion of the die 90 and has made physical contact with the contact region 130 of the die 90. This embodiment illustrates the case in which the connection to the die 90 is an electrical connection. For example, as is well know in the thin film materials art, an electrical connection can be formed from a deposited fluid 161 a if the fluid contains a metallic precursor or is an electrically conductive polymeric material. The material in the channel 150, after annealing, is in electrical contact with contact region 130 a. A connection so formed to the microsized device 90 enables the device to send and receive data in the form of digital or analog electrical signals. It is not necessary that the conductive material physically contact the contact region 130 a as long as it is closely disposed, as is well know in the art of dielectric current detection. The contact regions 130 a in FIG. 6 b may include electrically responsive elements such as voltage or current sources or voltage or current detectors, well known in the art of MST devices. The supportive structure 140 in FIG. 6 b aids wicking of the fluid 161 a to the contact region, since it ensures that there is space between the top surface of the ablative film and the protective coating 135, as well as between the top surface of the ablative film and the contact region 130 a. The supportive structure 140 in FIG. 6 b also helps prevent wicking of the fluid 161 a to the contact region 130 a on the right side of the die due to its contact with the top surface of the ablative film.
Referring to FIGS. 7 a-7 c, there is shown a cross-sectional view of the die 90, channel 150, and deposited fluid 160 as in FIG. 5 a but in more detail for the case in which the connection to the die 90 is a photonic connection. In this case, the material 160 deposited in the channel 150 is optically transparent (designated by 161 b). In accordance with the present invention, the fluid 161 b has wicked underneath a portion of the die 90 and has made physical contact with the contact region 130 b of the die 90. In the case that the fluid 161 b is an optically transparent material, for example a polymer such as polycarbonate or benzo chlorohexal borene, the material 161 b in the channel 150, after hardening or annealing, is in optical contact with the contact region 130 b on the die. In this case, the contact region 130 b comprises optically responsive elements, for example LED optical sources made from organic polymers, or photodetectors, made, for example, form deposited films such as ZnSe or doped silicon semiconductor junctions. A connection so formed to the microsized device 90 enables the device to send and receive data in the form of digital or analog optical signals. It is not necessary that the optically transmissive material physically contact the contact region 130 b as long as it is closely disposed since light can travel across the gap between the transmissive material and the optical sensor. The supportive structure 140 in FIG. 7 c aids wicking of the fluid 161 b to the contact region on the left of the die, since it ensures that there is space between the top surface of the ablative film and the contact region 130 b. The supportive structure 140 in FIG. 7 c additionally prevents wicking of the fluid to the contact region 130 b on the right side of the die due to its contact with the top surface of the ablative film.
It is noted that electrical contacts 130 a may be disposed on the left portion of the die 90 and are connected as disclosed above.
Referring to FIGS. 8 a-8 c, there is shown a cross-sectional view of a die 90, channel 150, and deposited fluid 161 c as in FIG. 5 a but in more detail for the case in which the connection to the die 90 is a magnetic connection. In this case, the material 161 c deposited in the channel 150 is a magnetically active material having a high magnetic permittivity (designated as 161 c). In accordance with the present invention, the fluid 161 c has wicked underneath a portion of the die 90 and has made physical contact with the contact regions 130 c of the die 90, which regions are shown as a pair of channels which serve to conduct a magnetic field to and from a contact region 130 c which is sensitive to an applied field, for example, contact region 130 c could be a Hall type magnetic field sensor. In the case that the fluid 161 c is a magnetically active material, for example iron or iron alloys, the material in the channel 150, after hardening or annealing, is in magnetic communication with the contact regions 130 c on the die 90. In this case, the contact regions 130 c comprise a magnetically responsive circuit, for example a Hall sensor, or, a source of magnetic fields, for example, a moveable mechanical transducer having a magnetic portion, as is well known in the art of MST devices. A connection so formed to the microsized device 90 enables the device to send and receive data in the form of digital or analog magnetic signals. It is not necessary that the magnetically active material physically contact the contact regions 130 c as long as it is closely disposed to the contact regions 130 c, since a magnetic field can be sensed across a gap between the material and the field sensor.
Referring to FIGS. 9 a-9 c, there is shown a cross-sectional view of a microsized device or die 90, channel 150, and an overlying conformal laminate film 180 for the case in which the connection to the die 90 is a fluidic connection. It is noted in the figures that color does not differentiate a channel 150 which is empty and a channel which is filled with externally sampled fluid 161 d. In this case, the contact region 130 d includes means responsive to the chemistry or rheology of the fluid 161 d present in the channel 150, for example the contact region 130 d may be a chemically sensitive field effect transistor (CHEM-FET) sensitive (which is designated as 130 d), for example, to the ionic content of the externally sampled fluid 160 d (for example a gas or liquid); or the contact region 130 d may be a conductivity detector, a humidity detector, a gas sensor, or a molecularly specific sensor such as a MIP resonator. The contact region 130 d may also be a fluidic opening built into the microdevice itself, to convey fluids to the device for biological analysis or processing. In this case, the microdevice may include pump means for drawing or dispensing the externally sampled fluid 161 d in the channels 150. Externally sampled fluids 160 d may include either liquids or gases. In one embodiment of this case, there is no material deposited in the channel 150 but a conformal laminate film 180 (FIG. 9 c) has been placed at least over those portions of the die 90 where channels 150 have been formed to serve as a cap to the channel.
It is noted the left portion of the die 90 may include electrical contacts 130 a which are connected as described above.
Alternatively (FIGS. 10 a-10 f), a sacrificial material may be placed in the channels 150, for example a phase change liquid such as a wax may be deposited in the channels and hardened by cooling. In accordance with this embodiment, the sacrificial fluid 161 e may wick underneath a portion of the die 90 and make physical contact with the contact region 130 d of the die 90. A fluid sealant may then be coated, for example by dip or spray coating over the entire ablative film or at least the portion having die and channels, and the sacrificial material 161 e subsequently removed to form channels 150 for the externally sampled fluid 161 d. The sacrificial material 161 e may be removed (indicated by 161 d), for example, by chemical dissolution or by heating to vaporize the material. In accordance with either procedure, a fluid channel 150 is formed in the ablative film in fluid communication with the contact region(s) of the die 90. A connection so formed to the microsized device enables the device 90 to respond to chemical content, for example the presence of salt in a fluid already present in the channel, or to fluid introduced and/or removed from the channel, as sensed, for example, by the pressure or the dielectric constant of the fluid. Similarly if the fluid is a gas, the sensor may detect molecular species such as ethane that diffuse or circulate in the channels.
Referring to FIGS. 10 a-10 f, there is shown a cross-sectional view of a die 90, channel 150, and deposited overlayer for another exemplary case in which the connection to the die 90 is a fluidic connection. In this case, the contact region 130 is a fluidic opening built into the end of the microdevice itself, rather than an opening or a sensor defined on the surface of the device, to convey fluids to the device for biological analysis or processing. The microdevice may include pump means for drawing or dispensing fluid in the channels 150 and data analysis means to analyze chemical or biological properties of fluids in the microdevice, such fluid functions being well known in the field of micro total analysis system. In FIGS. 10 a-10 c, provision is also included on the right of the microdevice for channel connections that are electrical in nature, as discussed in association with FIG. 6 a-6 c. In fact, the present invention envisions the use of multiple types of connections to single die and between die 90, including connections of the electrical, photonic, magnetic, and fluidic types. In FIG. 10 a-10 c, the fluidic channels are formed using the process of fluid deposition of a sacrificial material followed by coating of a sealing layer and then removal of the sacrificial material, as discussed above.
Referring to FIGS. 11 a-11 c, there is shown a cross-sectional view of a die 90, channel 150, and channel material 161 f for another exemplary case in which the connection to the die 90 is a mechanical connection. In this case, the contact region 130 f is mechanically responsive and therefore capable of sensing or producing static motion of the channel material (strain) or sensing or producing oscillatory motion, i.e. acoustic waves. Many microdevices are known in the art of MST technology, such as piezo cantilevers and electrostatic actuators, that are capable of all such functions. In FIG. 11 a-11 c, provision is also included on the right of the microdevice for channel connections that are electrical in nature, as discussed in association with FIG. 6 a-6 c. The present invention envisions the use of multiple types of connections to and between multiple types of die, including connections of the electrical, photonic, magnetic, mechanical, and fluidic types.
Referring to FIGS. 12 a-12 b, there is shown a top and cross-sectional view of a die 90, channel 150, and channel material 160 for the case in which the connection to the die 90 is remote, that is the material in the channel 150 is close to the contact region 130 of the die 90 but not in physical contact. As shown in FIG. 12 b, which contemplates the case of a fluid 160 deposited in the channel 150, no wicking of the fluid 160 has occurred under the die 90. This may be accomplished by choosing the surface of the die 90 and the fluid 160 so that the interfacial surface tension is low and does not favor wicking, for example aqueous based fluids will not generally wick under a die that is Teflon coated. In this case, the contact region 130 is still capable of sensing or receiving or sending electrical, photonic, magnetic, mechanical, and fluidic connections but at a reduced sensitivity. Many microdevices are know in the art of MST, such as magnetic detectors and temperature sensors that can detect small changes in fields, produced by say a current flow depicted on the right side of FIG. 12 a, or by small changes in temperature, produced, say, by the flow of a warm fluid as depicted on the left side of FIG. 12 a.
Finally, referring to FIG. 13, there is illustrated a top view of an ablative film 70 having multiple microsized devices with multiple connections of multiple types, including connections of the electrical, photonic, magnetic, mechanical, and fluidic types. Such arrays of interconnected microsized devices, including devices that generate and respond to electrical, photonic, magnetic, mechanical, and fluidic signals, function as microsystems, as is well known in the MST art. As has been discussed, and as shown in FIG. 13, the present invention contemplates that the connections are made to devices that are not precisely positioned on the ablative film. Channels 150 can be formed in a self aligned manner by focused radiation (e.g. lasers) by detecting, for example with a digital camera, the positions of the microsized devices, storing this information in a memory file, and using the information from such files to scan the focused radiation beams toward the desired locations on the die. (typically the locations of the contact pads).
The invention has been described with reference to a preferred embodiment. However, it will be appreciated that variations and modifications can be effected by a person of ordinary skill in the art without departing from the scope of the invention.
PARTS LIST
  • 5 ablative film
  • 10 substrate
  • 20 energy-absorbing layer
  • 30 multiple layers
  • 40 channel
  • 50 base
  • 60 conductor
  • 70 ablative film
  • 75 energy-absorbing layer
  • 80 substrate
  • 90 die
  • 100 channel
  • 110 metallic bond pads
  • 120 liquid
  • 130 contact regions
  • 130 a conductive contacts
  • 130 b optical contacts
  • 130 c magnetic contacts
  • 130 d external contacts
  • 130 f mechanical contact
  • 135 protective layers
  • 140 raised support structure
  • 150 channels
  • 160 fluid
  • 160 a conductive ink
  • 160 d externally sampled fluid
  • 161 hardened liquid (solid)
  • 161 a conductive material/deposited fluid
  • 161 b optical connection
  • 161 c magnetic connection
  • 161 d external connection
  • 161 e sacrificial connection
  • 161 f mechanical connection
  • 170 flexible blade
  • 180 conformal laminate film

Claims (13)

1. A method for connecting microsized devices mounted on a printing plate, the method comprising the steps of:
(a) providing an ablative printing plate;
(b) mounting at least a first and second microsized device, each having either one or more electrical or optical connections, upon the printing plate;
(c) ablating a microsized channel in the printing plate after mounting of the first and second microsized devices on the printing plate and between each of the microsized devices;
(d) placing either a conductor or optical element in the channel; and
(e) connecting the conductor or optical element between the electrical or optical connection of the first and second microsized devices.
2. The method as in claim 1 further comprising placing a wickable substance in the channel or an enhanced channel for providing efficient connections for either the electrical or optical connections.
3. The method as in claim 1 further comprising placing a curable substance in the channel or an enhanced channel for stabilizing the either the electrical or optical element in the channel.
4. The method as in claim 1 further comprising placing an adhesive substance in the channel or an enhanced channel for further stabilizing either the electrical or optical element.
5. The method as in claim 1 further comprising the step of providing an electrical device as either the first or second microsized device.
6. The method as in claim 5 further comprising the step of providing an active electrical device as the electrical device.
7. The method as in claim 5 further comprising the step of providing a passive electrical device as the electrical device.
8. The method as in claim 1 further comprising the step of having an embossed portion in the ablative printing plates for receiving the microsized device.
9. The method as in claim 1 further comprising the step of providing a plurality of bond pads along opposing edges of the microsized device.
10. The method as in claim 1 further comprising placing an adhesive on either the microsized device or ablative printing plate for mounting purposes.
11. The method as in claim 1 further comprising the step of placing a micro-fluidic device in the channel.
12. The method as in claim 1 further comprising the step of determining a position of the microsized device and storing the results.
13. The method as in claim 12 further comprising the step of placing one or more ablative channels according to the stored results.
US11/737,187 2007-04-19 2007-04-19 Connecting microsized devices using ablative films Expired - Fee Related US7696013B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US11/737,187 US7696013B2 (en) 2007-04-19 2007-04-19 Connecting microsized devices using ablative films
JP2010504047A JP2010527509A (en) 2007-04-19 2008-04-04 Connecting micro-sized devices using ablation films
CN200880012539A CN101681851A (en) 2007-04-19 2008-04-04 connecting microsized devices using ablative films
EP08742558A EP2147463A2 (en) 2007-04-19 2008-04-04 Connecting microsized devices using ablative films
PCT/US2008/004406 WO2008130493A2 (en) 2007-04-19 2008-04-04 Connecting microsized devices using ablative films
US12/635,747 US20100112758A1 (en) 2007-04-19 2009-12-11 Connecting microsized devices using ablative films
US12/635,750 US20100109168A1 (en) 2007-04-19 2009-12-11 Connecting microsized devices using ablative films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/737,187 US7696013B2 (en) 2007-04-19 2007-04-19 Connecting microsized devices using ablative films

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/635,747 Continuation US20100112758A1 (en) 2007-04-19 2009-12-11 Connecting microsized devices using ablative films
US12/635,750 Division US20100109168A1 (en) 2007-04-19 2009-12-11 Connecting microsized devices using ablative films

Publications (2)

Publication Number Publication Date
US20080258313A1 US20080258313A1 (en) 2008-10-23
US7696013B2 true US7696013B2 (en) 2010-04-13

Family

ID=39643402

Family Applications (3)

Application Number Title Priority Date Filing Date
US11/737,187 Expired - Fee Related US7696013B2 (en) 2007-04-19 2007-04-19 Connecting microsized devices using ablative films
US12/635,747 Abandoned US20100112758A1 (en) 2007-04-19 2009-12-11 Connecting microsized devices using ablative films
US12/635,750 Abandoned US20100109168A1 (en) 2007-04-19 2009-12-11 Connecting microsized devices using ablative films

Family Applications After (2)

Application Number Title Priority Date Filing Date
US12/635,747 Abandoned US20100112758A1 (en) 2007-04-19 2009-12-11 Connecting microsized devices using ablative films
US12/635,750 Abandoned US20100109168A1 (en) 2007-04-19 2009-12-11 Connecting microsized devices using ablative films

Country Status (5)

Country Link
US (3) US7696013B2 (en)
EP (1) EP2147463A2 (en)
JP (1) JP2010527509A (en)
CN (1) CN101681851A (en)
WO (1) WO2008130493A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019133979A1 (en) * 2017-12-30 2019-07-04 Texas Instruments Incorporated Additive photonic interconnects in microelectronic device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9142475B2 (en) * 2013-08-13 2015-09-22 Intel Corporation Magnetic contacts
EP3127148A4 (en) * 2014-03-31 2017-11-15 Multerra Bio, Inc. Low-cost packaging for fluidic and device co-integration
WO2016048347A1 (en) 2014-09-26 2016-03-31 Intel Corporation Flexible packaging architecture
DE102016212666A1 (en) * 2016-07-12 2018-01-18 Schweizer Electronic Ag Method for producing a printed circuit board element and printed circuit board element
WO2018094057A1 (en) * 2016-11-21 2018-05-24 3M Innovative Properties Company Automatic registration between circuit dies and interconnects
EP3355667A1 (en) * 2017-01-30 2018-08-01 Siemens Aktiengesellschaft Method for producing an electrical circuit and electrical circuit
DE102017221544A1 (en) * 2017-11-30 2019-06-06 Contitech Antriebssysteme Gmbh Flexible product
JP2021524671A (en) * 2018-05-21 2021-09-13 スリーエム イノベイティブ プロパティズ カンパニー Ultra-thin and flexible device including circuit die

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5472539A (en) * 1994-06-06 1995-12-05 General Electric Company Methods for forming and positioning moldable permanent magnets on electromagnetically actuated microfabricated components
WO2002086162A1 (en) 2001-04-23 2002-10-31 Samsung Electronics Co., Ltd. Molecular detection chip including mosfet, molecular detection device employing the chip, and molecular detection method using the device
US6752966B1 (en) * 1999-09-10 2004-06-22 Caliper Life Sciences, Inc. Microfabrication methods and devices
WO2004083802A2 (en) 2003-03-18 2004-09-30 Cantion A/S A cantilever array chemical sensor
US20050227182A1 (en) 2004-04-10 2005-10-13 Kodak Polychrome Graphics Llc Method of producing a relief image for printing
US20050244955A1 (en) * 2004-04-21 2005-11-03 The Regents Of The University Of California Automated, programmable, high throughput, multiplexed assay system for cellular and biological assays
US6987312B2 (en) 2002-02-07 2006-01-17 Infineon Technologies, Ag Semiconductor device with sensor and/or actuator surface and method for producing it
US20060057293A1 (en) 2004-09-03 2006-03-16 Eastman Kodak Company Thermally controlled fluidic self-assembly
US20060063111A1 (en) * 2004-09-17 2006-03-23 Kodak Polychrome Method of forming a structured surface using ablatable radiation sensitive material
US20060118233A1 (en) * 2003-07-07 2006-06-08 Christopher Wargo System and method for forming high resolution electronic circuits on a substrate
US20060134799A1 (en) 2004-12-22 2006-06-22 Eastman Kodak Company Thermally controlled fluidic self-assembly
WO2006088427A1 (en) 2005-02-15 2006-08-24 Agency For Science, Technology And Research Microfluidics package and method of fabricating the same
US7115514B2 (en) 2003-10-02 2006-10-03 Raydiance, Inc. Semiconductor manufacturing using optical ablation
US20070220970A1 (en) 2004-04-30 2007-09-27 Markus Gruber Measuring Cell as Well as Constructing Methods for a Measuring Cell and Measuring Apparatus with a Mount for Such a Measuring Cell

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332615A (en) * 2005-04-25 2006-12-07 Brother Ind Ltd Method for forming pattern

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5472539A (en) * 1994-06-06 1995-12-05 General Electric Company Methods for forming and positioning moldable permanent magnets on electromagnetically actuated microfabricated components
US6752966B1 (en) * 1999-09-10 2004-06-22 Caliper Life Sciences, Inc. Microfabrication methods and devices
WO2002086162A1 (en) 2001-04-23 2002-10-31 Samsung Electronics Co., Ltd. Molecular detection chip including mosfet, molecular detection device employing the chip, and molecular detection method using the device
US6987312B2 (en) 2002-02-07 2006-01-17 Infineon Technologies, Ag Semiconductor device with sensor and/or actuator surface and method for producing it
WO2004083802A2 (en) 2003-03-18 2004-09-30 Cantion A/S A cantilever array chemical sensor
US20060118233A1 (en) * 2003-07-07 2006-06-08 Christopher Wargo System and method for forming high resolution electronic circuits on a substrate
US7115514B2 (en) 2003-10-02 2006-10-03 Raydiance, Inc. Semiconductor manufacturing using optical ablation
US20050227182A1 (en) 2004-04-10 2005-10-13 Kodak Polychrome Graphics Llc Method of producing a relief image for printing
US20050244955A1 (en) * 2004-04-21 2005-11-03 The Regents Of The University Of California Automated, programmable, high throughput, multiplexed assay system for cellular and biological assays
US20070220970A1 (en) 2004-04-30 2007-09-27 Markus Gruber Measuring Cell as Well as Constructing Methods for a Measuring Cell and Measuring Apparatus with a Mount for Such a Measuring Cell
US20060057293A1 (en) 2004-09-03 2006-03-16 Eastman Kodak Company Thermally controlled fluidic self-assembly
US20060063111A1 (en) * 2004-09-17 2006-03-23 Kodak Polychrome Method of forming a structured surface using ablatable radiation sensitive material
US20060134799A1 (en) 2004-12-22 2006-06-22 Eastman Kodak Company Thermally controlled fluidic self-assembly
WO2006088427A1 (en) 2005-02-15 2006-08-24 Agency For Science, Technology And Research Microfluidics package and method of fabricating the same

Non-Patent Citations (11)

* Cited by examiner, † Cited by third party
Title
A. P. Malshe, et al., "Challenges in the Packaging of MEMS", International Journal of Microcircuits and Electronic Packaging, International Microelectronics & Packaging Society, vol. 22, No. 3, Sep. 21, 1999, pp. 233-241.
Bustillo et al., Surface Micromachining for Microeletromechanical Syatems, 1998, Proceedings of the IEEE, vol. 86, No. 8, pp. 1552-1574. *
Butler et al., "Extension of High Density Interconnect Multichip Module Technology for MEMS Packaging", 1997, Proc. of SPIE, vol. 3224,pp. 169-177. *
Griese, "A high-performance hybrid electrical-optical interconnection technology for high-speed electronic systems", 2001, IEEE Transactions on advanced packaging, vol. 24, No. 3, pp. 375-383. *
J. T. Butler, et al., Extension of High Density Interconnect Multichip Module Technology for MEMS Packaging, Proceedings of SPIE-The International Society for Optical Engineering, SPIE, Bellingham, VA, vol. 3224, Sep. 29, 1997, pp. 169-177.
J. T. Butler, et al., Extension of High Density Interconnect Multichip Module Technology for MEMS Packaging, Proceedings of SPIE—The International Society for Optical Engineering, SPIE, Bellingham, VA, vol. 3224, Sep. 29, 1997, pp. 169-177.
Nieweglowski et al., "Optical Interconnections on PCBs-Recent Development", 2004, 2004 International Student and Young Scientist Workshop, pp. 35-39. *
Nieweglowski et al., "Optical Interconnections on PCBs—Recent Development", 2004, 2004 International Student and Young Scientist Workshop, pp. 35-39. *
Rosenthal, "Application of Ultrasonic Light Modulation . . . ", 1961, IRE Transactions on Ultrasonic Engineering, vol. 8, pp. 1-5. *
Van Steenberge et al., "MT-Compatible Laser-Ablated Interconnections for Optical Printed Circuit Boards", 2004, Journal of Lightwave Technology, vol. 22, No. 2, pp. 2083-2090. *
Wolf et al., Silicon Processing for the VLSI Era, 2000, Lattice Press, pp. 828-829; 848-851. *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019133979A1 (en) * 2017-12-30 2019-07-04 Texas Instruments Incorporated Additive photonic interconnects in microelectronic device

Also Published As

Publication number Publication date
WO2008130493A2 (en) 2008-10-30
CN101681851A (en) 2010-03-24
US20100109168A1 (en) 2010-05-06
EP2147463A2 (en) 2010-01-27
US20080258313A1 (en) 2008-10-23
WO2008130493A3 (en) 2009-03-19
JP2010527509A (en) 2010-08-12
US20100112758A1 (en) 2010-05-06

Similar Documents

Publication Publication Date Title
US7696013B2 (en) Connecting microsized devices using ablative films
US6351390B1 (en) Method for applying a microsystem or a converter on a substrate, and device manufactured accordingly
US10068938B2 (en) Solid image-pickup device with flexible circuit substrate
US7485956B2 (en) Microelectronic package optionally having differing cover and device thermal expansivities
US8563358B2 (en) Method of producing a chip package, and chip package
EP2850654B1 (en) Assembly of wafer stacks
US7457490B2 (en) Micro-optics on optoelectronics
US20180035548A1 (en) Patterned layer compound
US20130140656A1 (en) MEMS Microphone And Method For Producing The MEMS Microphone
US20100117224A1 (en) Sensor
US20100224945A1 (en) Sensor device and manufacturing method thereof
US10773949B2 (en) Method of manufacturing an electronic device
EP2668131A2 (en) Method for manufacturing a sensor chip comprising a device for testing it
US11101189B2 (en) Semiconductor device package and method of manufacturing the same
JP4361567B2 (en) Sealing MEMS devices using liquid crystal polymers
US8975106B2 (en) Chip package and method for forming the same
KR20130110212A (en) Method for producing a plurality of semiconductor components
US20220238773A1 (en) Method for Producing a Component, and Component
US11364493B2 (en) Planarization layers over silicon dies
JP4862988B2 (en) Wiring substrate and semiconductor device manufacturing method
JP2009246128A (en) Mounting method of integrated circuit chip on board, and mounting device of integrated circuit chip
US20090193905A1 (en) Pressure Sensor Package Structure

Legal Events

Date Code Title Description
AS Assignment

Owner name: EASTMAN KODAK COMPANY, NEW YORK

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ALI, M. ZAKI;STOLT, A. PETER;HAWKINS, GILBERT A.;AND OTHERS;REEL/FRAME:019517/0139;SIGNING DATES FROM 20070605 TO 20070613

Owner name: EASTMAN KODAK COMPANY,NEW YORK

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ALI, M. ZAKI;STOLT, A. PETER;HAWKINS, GILBERT A.;AND OTHERS;SIGNING DATES FROM 20070605 TO 20070613;REEL/FRAME:019517/0139

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCF Information on status: patent grant

Free format text: PATENTED CASE

AS Assignment

Owner name: CITICORP NORTH AMERICA, INC., AS AGENT, NEW YORK

Free format text: SECURITY INTEREST;ASSIGNORS:EASTMAN KODAK COMPANY;PAKON, INC.;REEL/FRAME:028201/0420

Effective date: 20120215

AS Assignment

Owner name: WILMINGTON TRUST, NATIONAL ASSOCIATION, AS AGENT,

Free format text: PATENT SECURITY AGREEMENT;ASSIGNORS:EASTMAN KODAK COMPANY;PAKON, INC.;REEL/FRAME:030122/0235

Effective date: 20130322

Owner name: WILMINGTON TRUST, NATIONAL ASSOCIATION, AS AGENT, MINNESOTA

Free format text: PATENT SECURITY AGREEMENT;ASSIGNORS:EASTMAN KODAK COMPANY;PAKON, INC.;REEL/FRAME:030122/0235

Effective date: 20130322

AS Assignment

Owner name: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE, DELAWARE

Free format text: INTELLECTUAL PROPERTY SECURITY AGREEMENT (FIRST LIEN);ASSIGNORS:EASTMAN KODAK COMPANY;FAR EAST DEVELOPMENT LTD.;FPC INC.;AND OTHERS;REEL/FRAME:031158/0001

Effective date: 20130903

Owner name: BARCLAYS BANK PLC, AS ADMINISTRATIVE AGENT, NEW YORK

Free format text: INTELLECTUAL PROPERTY SECURITY AGREEMENT (SECOND LIEN);ASSIGNORS:EASTMAN KODAK COMPANY;FAR EAST DEVELOPMENT LTD.;FPC INC.;AND OTHERS;REEL/FRAME:031159/0001

Effective date: 20130903

Owner name: BARCLAYS BANK PLC, AS ADMINISTRATIVE AGENT, NEW YO

Free format text: INTELLECTUAL PROPERTY SECURITY AGREEMENT (SECOND LIEN);ASSIGNORS:EASTMAN KODAK COMPANY;FAR EAST DEVELOPMENT LTD.;FPC INC.;AND OTHERS;REEL/FRAME:031159/0001

Effective date: 20130903

Owner name: EASTMAN KODAK COMPANY, NEW YORK

Free format text: RELEASE OF SECURITY INTEREST IN PATENTS;ASSIGNORS:CITICORP NORTH AMERICA, INC., AS SENIOR DIP AGENT;WILMINGTON TRUST, NATIONAL ASSOCIATION, AS JUNIOR DIP AGENT;REEL/FRAME:031157/0451

Effective date: 20130903

Owner name: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE, DELA

Free format text: INTELLECTUAL PROPERTY SECURITY AGREEMENT (FIRST LIEN);ASSIGNORS:EASTMAN KODAK COMPANY;FAR EAST DEVELOPMENT LTD.;FPC INC.;AND OTHERS;REEL/FRAME:031158/0001

Effective date: 20130903

Owner name: PAKON, INC., NEW YORK

Free format text: RELEASE OF SECURITY INTEREST IN PATENTS;ASSIGNORS:CITICORP NORTH AMERICA, INC., AS SENIOR DIP AGENT;WILMINGTON TRUST, NATIONAL ASSOCIATION, AS JUNIOR DIP AGENT;REEL/FRAME:031157/0451

Effective date: 20130903

Owner name: BANK OF AMERICA N.A., AS AGENT, MASSACHUSETTS

Free format text: INTELLECTUAL PROPERTY SECURITY AGREEMENT (ABL);ASSIGNORS:EASTMAN KODAK COMPANY;FAR EAST DEVELOPMENT LTD.;FPC INC.;AND OTHERS;REEL/FRAME:031162/0117

Effective date: 20130903

FPAY Fee payment

Year of fee payment: 4

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552)

Year of fee payment: 8

AS Assignment

Owner name: QUALEX, INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:050239/0001

Effective date: 20190617

Owner name: KODAK AMERICAS, LTD., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:050239/0001

Effective date: 20190617

Owner name: KODAK IMAGING NETWORK, INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:050239/0001

Effective date: 20190617

Owner name: CREO MANUFACTURING AMERICA LLC, NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:050239/0001

Effective date: 20190617

Owner name: KODAK PORTUGUESA LIMITED, NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:050239/0001

Effective date: 20190617

Owner name: FPC, INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:050239/0001

Effective date: 20190617

Owner name: EASTMAN KODAK COMPANY, NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:050239/0001

Effective date: 20190617

Owner name: LASER PACIFIC MEDIA CORPORATION, NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:050239/0001

Effective date: 20190617

Owner name: KODAK AVIATION LEASING LLC, NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:050239/0001

Effective date: 20190617

Owner name: PAKON, INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:050239/0001

Effective date: 20190617

Owner name: FAR EAST DEVELOPMENT LTD., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:050239/0001

Effective date: 20190617

Owner name: NPEC, INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:050239/0001

Effective date: 20190617

Owner name: KODAK (NEAR EAST), INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:050239/0001

Effective date: 20190617

Owner name: KODAK PHILIPPINES, LTD., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:050239/0001

Effective date: 20190617

Owner name: KODAK REALTY, INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:050239/0001

Effective date: 20190617

AS Assignment

Owner name: KODAK IMAGING NETWORK, INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:049901/0001

Effective date: 20190617

Owner name: QUALEX, INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:049901/0001

Effective date: 20190617

Owner name: NPEC, INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:049901/0001

Effective date: 20190617

Owner name: LASER PACIFIC MEDIA CORPORATION, NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:049901/0001

Effective date: 20190617

Owner name: KODAK (NEAR EAST), INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:049901/0001

Effective date: 20190617

Owner name: KODAK REALTY, INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:049901/0001

Effective date: 20190617

Owner name: EASTMAN KODAK COMPANY, NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:049901/0001

Effective date: 20190617

Owner name: KODAK AVIATION LEASING LLC, NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:049901/0001

Effective date: 20190617

Owner name: FAR EAST DEVELOPMENT LTD., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:049901/0001

Effective date: 20190617

Owner name: KODAK PORTUGUESA LIMITED, NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:049901/0001

Effective date: 20190617

Owner name: KODAK AMERICAS, LTD., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:049901/0001

Effective date: 20190617

Owner name: KODAK PHILIPPINES, LTD., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:049901/0001

Effective date: 20190617

Owner name: PAKON, INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:049901/0001

Effective date: 20190617

Owner name: CREO MANUFACTURING AMERICA LLC, NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:049901/0001

Effective date: 20190617

Owner name: PFC, INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:049901/0001

Effective date: 20190617

AS Assignment

Owner name: KODAK REALTY INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BARCLAYS BANK PLC;REEL/FRAME:052773/0001

Effective date: 20170202

Owner name: KODAK (NEAR EAST) INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BARCLAYS BANK PLC;REEL/FRAME:052773/0001

Effective date: 20170202

Owner name: NPEC INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BARCLAYS BANK PLC;REEL/FRAME:052773/0001

Effective date: 20170202

Owner name: EASTMAN KODAK COMPANY, NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BARCLAYS BANK PLC;REEL/FRAME:052773/0001

Effective date: 20170202

Owner name: FPC INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BARCLAYS BANK PLC;REEL/FRAME:052773/0001

Effective date: 20170202

Owner name: KODAK AMERICAS LTD., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BARCLAYS BANK PLC;REEL/FRAME:052773/0001

Effective date: 20170202

Owner name: FAR EAST DEVELOPMENT LTD., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BARCLAYS BANK PLC;REEL/FRAME:052773/0001

Effective date: 20170202

Owner name: KODAK PHILIPPINES LTD., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BARCLAYS BANK PLC;REEL/FRAME:052773/0001

Effective date: 20170202

Owner name: LASER PACIFIC MEDIA CORPORATION, NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BARCLAYS BANK PLC;REEL/FRAME:052773/0001

Effective date: 20170202

Owner name: QUALEX INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BARCLAYS BANK PLC;REEL/FRAME:052773/0001

Effective date: 20170202

AS Assignment

Owner name: ALTER DOMUS (US) LLC, ILLINOIS

Free format text: INTELLECTUAL PROPERTY SECURITY AGREEMENT;ASSIGNOR:EASTMAN KODAK COMPANY;REEL/FRAME:056733/0681

Effective date: 20210226

Owner name: ALTER DOMUS (US) LLC, ILLINOIS

Free format text: INTELLECTUAL PROPERTY SECURITY AGREEMENT;ASSIGNOR:EASTMAN KODAK COMPANY;REEL/FRAME:056734/0001

Effective date: 20210226

Owner name: ALTER DOMUS (US) LLC, ILLINOIS

Free format text: INTELLECTUAL PROPERTY SECURITY AGREEMENT;ASSIGNOR:EASTMAN KODAK COMPANY;REEL/FRAME:056734/0233

Effective date: 20210226

Owner name: BANK OF AMERICA, N.A., AS AGENT, MASSACHUSETTS

Free format text: NOTICE OF SECURITY INTERESTS;ASSIGNOR:EASTMAN KODAK COMPANY;REEL/FRAME:056984/0001

Effective date: 20210226

FEPP Fee payment procedure

Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

LAPS Lapse for failure to pay maintenance fees

Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20220413