|Publication number||US7169689 B2|
|Application number||US 11/066,253|
|Publication date||30 Jan 2007|
|Filing date||28 Feb 2005|
|Priority date||12 May 2000|
|Also published as||US6506636, US20020013022, US20030162334, US20050158922|
|Publication number||066253, 11066253, US 7169689 B2, US 7169689B2, US-B2-7169689, US7169689 B2, US7169689B2|
|Inventors||Shunpei Yamazaki, Taketomi Asami, Mitsuhiro Ichijo, Toru Mitsuki, Yoko Kanakubo|
|Original Assignee||Semiconductor Energy Laboratory Co., Ltd.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (20), Classifications (34), Legal Events (2)|
|External Links: USPTO, USPTO Assignment, Espacenet|
1. Field of the Invention
The present invention relates to a method of manufacturing a semiconductor device, such as a thin film transistor (hereinafter referred to as a TFT), using a crystalline semiconductor film formed on a substrate. The semiconductor device fabricated by the present invention includes not only an element such as a TFT or a MOS transistor, but also a liquid crystal display device, an EL (Electro Luminescence) display device, an EC (Electro Chromic) display device, an image sensor, or the like, each including a semiconductor circuit (microprocessor, signal processing circuit, high frequency circuit, etc.) constituted by insulated gate transistors.
2. Description of the Related Art
At present, as a semiconductor element using a semiconductor film, a thin film transistor (hereinafter referred to as a TFT) is used for each integrated circuit, and is especially used as a switching element of an image display device. Further, a TFT using as an active layer a crystalline semiconductor film having higher mobility than an amorphous semiconductor film has high drive capability and is also used as an element of a driving circuit.
As a method of obtaining a crystalline semiconductor film, a thermal annealing method, a laser annealing method, or techniques disclosed in Japanese Patent Application Laid-Open No. Hei. 7-130652 and No. Hei. 8-78329 by the present assignee are well known. The technique disclosed in the publications uses a metal element (especially nickel (Ni)) for promoting crystallization of silicon to enable the formation of a crystalline silicon film having excellent crystallinity by a heat treatment at 500 to 600° C. for about 4 hours.
Reliability is regarded as most important in evaluation of a TFT. As a factor to lower the reliability, an impurity in the TFT (hereinafter, an impurity to lower the reliability of a TFT is called a contaminant impurity in the present specification) can be mentioned. The contaminant impurity is mixed in the TFT from various contaminating sources such as the air, a glass substrate, and a manufacturing apparatus. Particularly, that the contaminant impurity exists on an interface of films constituting the TFT is a great factor to damage the reliability of the TFT.
Besides, among things indicating electrical characteristics of a TFT, there is a threshold voltage (Vth). In general, there is a method of adding boron (B) as an impurity element to give a p-type into a crystalline semiconductor film in order to control the threshold voltage (Vth) of an n-channel TFT.
It is difficult to continuously conduct all steps of forming and treating respective films constituting a TFT. For example, a crystalline semiconductor film is obtained by using a method of crystallizing an amorphous semiconductor film by heat, laser light or the like. In general, a film formation apparatus and a furnace or a laser apparatus, for a heat treatment are respectively independent of each other. Besides, if a film formation apparatus is used, in which only one kind of film can be formed, though the apparatus includes a single or a plurality of film formation chambers, the surface of a substrate is exposed to a clean room atmosphere each time the film formation is made. Accordingly, it becomes necessary to provide a step of washing the surface of a film prior to a next treatment. However, the substrate is also exposed to the air atmosphere until it is put in the film formation apparatus from a washer.
A semiconductor device is generally fabricated in a clean room. In the clean room, although a filter is used to remove dirt, dust, contaminant substance or the like from the outer air to be taken in, a lot of contaminant impurities generated from the filter itself, especially boron (B) or a lot of contaminant impurities from a person working in the clean room, especially sodium (Na) exist in the clean room atmosphere. That is, the surface of the substrate is contaminated by merely exposing the substrate to the clean room atmosphere.
Besides, if an impurity is put in a regular crystal structure, the regular crystal structure is broken. That is, that the boron (B) to give a p-type is added to a crystalline semiconductor film in order to control a threshold voltage (Vth) breaks the crystal structure of the crystalline semiconductor film, and there is a possibility that the drive capability of the TFT is lowered.
An object of the present invention is to keep an interface of respective films constituting a TFT in a clean state without being contaminated by a contaminant impurity.
Another object of the present invention is to add an impurity element to give a p-type into an n-channel TFT without breaking the crystal structure of a crystalline semiconductor film.
In order to achieve the above object, the present invention is characterized in that in a film formation apparatus including a plurality of film formation chambers, steps from formation of a base film to formation of a silicon oxide film as a protective film for addition of an impurity element to give a p-type into an n-channel TFT are continuously conducted without being exposed to a clean room atmosphere. In other words, the present invention is characterized in that contamination of an interface of the respective films is prevented by using the film formation apparatus including the plurality of film formation chambers.
Besides, in order to achieve the above object, the present invention is characterized in that a washing room for removing a contaminant impurity on a surface of a film is provided for a laser apparatus, and steps from contaminant impurity removal of the surface of the film to laser annealing are continuously conducted.
In the above constitution, the contaminant impurity removal of the surface of the film is carried out in such a manner that after washing is carried out by pure water dissolving ozone therein, an acid solution containing fluorine is used to etch the surface of the film very slightly.
As means for carrying out etching very slightly, such a method is effective that a spin apparatus is used to spin a substrate, and the acid solution containing fluorine which is brought into contact with the surface of the film is scattered.
The reason why the pure water containing ozone is used is as follows:
(1) A very thin oxide film is formed on the surface of a first film by ozone, and a contaminant impurity adsorbed on the surface of the first film, together with the very thin oxide film, can be subsequently removed by using the acid solution containing fluorine.
(2) In the case where the first film is hydrophobic, the surface of the first film is changed to be hydrophilic by oxidizing the surface with ozone, and a cleaning effect is improved.
(3) A very small amount of carbide material existing in a clean room atmosphere can be removed through oxidation and decomposition by ozone.
As the acid solution containing fluorine, hydrofluoric acid, dilute hydrofluoric acid, ammonium fluoride, buffered hydrofluoric acid (mixed solution of hydrofluoric acid and ammonium fluoride), mixed solution of hydrofluoric acid and hydrogen peroxide water, or the like can be used.
Accordingly, the semiconductor device of the present invention is characterized in that a spin type washer is provided in a washing chamber, and pure water in which ozone is dissolved and an acid solution containing fluorine are used as a washing liquid, so that the contaminant impurity on the surface of the film constituting the TFT is removed.
Besides, in order to achieve the object with respect to the crystal structure breakdown, the present invention is characterized in that after boron (B) as an impurity element to give a p-type is added to an amorphous semiconductor film in an n-channel TFT, crystallization is carried out.
In the accompany drawings:
Embodiment Modes of the present invention will be described with reference to
Embodiment Mode 1
The formation of respective films is carried out in the respective film formation chambers. The formation of a base film is carried out in the first film formation chamber 103, and next, the formation of an amorphous semiconductor film is carried out in the second film formation chamber 104, and next, a catalytic element for promoting crystallization of the amorphous semiconductor film is added in the third film formation chamber 105, and finally, the formation of a protective film for addition of an impurity element to give a p-type into an n-channel TFT is carried out in the fourth film formation chamber 106. As the protective film, a silicon oxide film, a silicon nitride oxide film or the like may be used.
With respect to the films formed in the respective film formation chambers, any forming means such as a plasma CVD method, a thermal CVD method, a low pressure CVD method, an evaporation method, or a sputtering method can be used.
When a heat treatment is carried out after boron (B) as the impurity element to give the p-type is added to an amorphous semiconductor film of an n-channel TFT, boron becomes a part of crystal structure of a crystalline semiconductor film and crystallization occurs, so that breakdown of the crystal structure occurring in the prior art can be prevented.
In the present invention, crystallization is made by addition of the catalytic element to the amorphous semiconductor film. Accordingly, although crystallization becomes possible by a heat treatment at 500 to 600° C., if laser annealing is further carried out, a crystallization rate is raised.
The contaminant impurity in this constitution is made of one element or a plurality of elements existing in the atmosphere. Especially, the contaminant impurity is made of one element or a plurality of elements selected from B, Na, K, Mg, and Ca.
Embodiment Mode 2
First, the formation of a base film is carried out in the first film formation chamber 402. Next, an amorphous semiconductor film is formed in the second film formation chamber 403. Next, a first laser annealing is carried out by the laser apparatus 405. It is known that a doped amorphous semiconductor film is difficult to crystallize by laser annealing. Thus, the first annealing is carried out to advance crystallization to a certain degree. The laser apparatus 405 includes a treatment chamber 406, introduction means 406 g of a gas such as nitrogen or argon, exhaust means 406 p, a laser oscillator 407, and the like.
Next, the formation of a protective film for addition of an impurity element to give a p-type into an n-channel TFT is carried out in the third film formation chamber.
With respect to the films formed in the respective film formation chambers, any forming means such as a plasma CVD method, a thermal CVD method, a low pressure CVD method, an evaporation method, or a sputtering method can be used.
The impurity element to give the p-type is added using a doping apparatus in order to control the threshold voltage (Vth) of the n-channel TFT. The doping apparatus 408 indicates an ion doping apparatus, and includes an ion generation chamber 412, a treatment chamber 409, introduction means 412 g of a gas to be used, exhaust means 409 p, and the like. As the impurity element to give the p-type to a semiconductor, an element in the Group 13 of the periodic table, such as boron (B), aluminum (Al), or gallium (Ga), is known.
After the impurity is added, a second laser treatment is carried out to make crystallization by the laser apparatus without removing the protective film.
Hereinafter, although embodiments of the present invention will be described, the present invention is not particularly limited to these.
Embodiments of the present invention will be described with reference to
As a substrate 500, a glass substrate, a quartz substrate, a ceramic substrate, or the like may be used. Also, a silicon substrate, a metallic substrate, or a stainless substrate on which an insulating film is formed may be used. A plastic substrate having heat resistance to a process temperature of this embodiment may also be used.
Then, as shown in
Subsequently, an amorphous semiconductor film 502 is formed on the base film 501 in a second film formation chamber. The amorphous semiconductor film is formed into a thickness of from 30 to 60 nm. The material of the amorphous semiconductor film is not particularly limited, however, the film is preferably made of silicon, a silicon germanium (SixGe1-x; x=0.01 to 2 atomic %) alloy or the like. In this embodiment, amorphous silicon film is formed by a plasma CVD method using SiH4 gas.
Besides, the base film and the amorphous semiconductor film can be formed by the same method, and therefore the base film 501 and the amorphous semiconductor film 502 can be formed continuously.
Subsequently, Ni is added to the amorphous silicon film 502 in a third film formation chamber. An electrode containing Ni as a material is attached by a plasm CVD method, and plasma is erected by introducing a gas such as argon to add Ni. Of course, an extremely thin film of Ni may be formed by evaporation or sputtering.
Next, a protective film 504 is formed in a fourth film formation chamber. As the protective film, silicon oxide film, silicon oxynitride film, or the like is preferably used. When the succeeding dehydrogenation process is performed, a dense film such as a silicon oxide film is not preferably used, because hydrogen hardly penetrates therethrough. In this embodiment, TEOS (tetraethyl orthosilicate) and O2 are mixed to form a silicon oxide film with a thickness of from 100 to 150 nm by a plasma CVD method.
Then, to control the threshold voltage (Vth) of an n-channel TFT, an impurity element imparting p-type is added thereto (
After the addition of boron, a dehydrogenation process (500° C. for 1 hour) and a thermal crystallization process (550° C. for 4 hours) are succeedingly performed to an amorphous semiconductor film 503. Here, a known thermal crystallization process may be performed without adding a catalyst element such as Ni. Then, the silicon oxide film as the protective film is removed by using an etching solution such as fluoric acid.
Next, washing and laser annealing are continuously performed (
Laser annealing may be performed in such a manner that laser light irradiated from a laser oscillator is condensed into a linear shape by an optical system to emit it to the semiconductor film. The condition of crystallization may appropriately be selected by an operator.
A crystalline semiconductor film 505 is patterned into a desired shape, and then an island-like semiconductor layers 506 to 510 are formed by dry etching.
Then, a gate insulating film 511 for covering the island-like semiconductor layers 506 to 510 is formed. The gate insulating film 511 is formed by a plasma CVD method or a sputtering method, and the film thickness thereof is set as 40 to 150 nm using an insulating film containing silicon. The gate insulating film is not limited to the silicon oxynitride film, an another insulating film containing silicon may be formed into a single layer or a lamination structure.
Beside, when the silicon oxide film is used, it can be formed by plasma CVD in which TEOS (tetraethyl orthosilicate) and O2 are mixed, with a reaction pressure of 40 Pa, a substrate temperature of from 300 to 400° C., and discharged at a high frequency (13.56 MHz) power density of 0.5 to 0.8 W/cm2. Good characteristics as the gate insulating film can be obtained in the silicon oxide film thus manufactured by subsequent thermal annealing at 400 to 500° C.
Then, on the gate insulating film 511, a first conductive film 512 (TaN) and a second conductive film (W) 513 are formed into lamination to have a film thickness of from 20 to 100 nm and 100 to 400 nm, respectively. The conductive films may be formed of an element selected from Ta, W, Ti, Mo, Al, and Cu, or an alloy material or a compound material containing the above elements as the main component. Besides, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. Besides, any combination may be employed such as a combination in which the first conductive film is formed of tantalum (Ta) and the second conductive film is formed of W, a combination in which the first conductive film is formed of tantalum nitride (TaN) and the second conductive film is formed of Al, or a combination in which the first conductive film is formed of tantalum nitride (TaN) and the second conductive film is formed of Cu.
In this case, if the formation of the gate insulating film 511 and the gate conductive films 512 and 513 are performed using a film formation apparatus equipped with a washing machine, contamination of the interface of films may be prevented. The similar washing method used before laser anneal treatment can be used.
Next, masks 514 to 519 consisting of resist are formed by using a photolithography method, and a first etching process for forming electrodes and wirings is carried out. In this embodiment, an ICP (inductively coupled plasma) etching method is used, in which CF4, Cl2, and O2 are used as the etching gases, a gas flowing rate of each gas is set as 25/25/10 (sccm), and an RF (13.56 MHz) power of 500 W is applied to a coil type electrode under a pressure of 1 Pa to generate plasma. Thus the etching is performed. An RF (13.56 MHz) power of 150 W is also applied to the side of the substrate (sample stage) and a substantially negative self bias voltage is applied thereto. Based on this first etching condition, the W film is etched to make an end portion of the first conductive layer into a tapered shape.
Thereafter, the etching condition is changed into a second etching condition, and the etching is performed, without removing masks 514 to 519 consisting of resist, in which CF4 and Cl2 are used as the etching gases, a gas flowing rate of each gas is set as 30/30 (sccm), and an RF (13.56 MHz) power of 500 W is applied to a coil type electrode under a pressure of 1 Pa to generate plasma. Thus, the etching is performed about 30 seconds. An RF (13.56 MHz) power of 20 W is also applied to the side of the substrate (sample stage) and a substantially negative self bias voltage is applied thereto. In the second etching condition, in which CF4 and Cl2 are mixed, the W film and the TaN film are etched in the same degree. Note that, in order to perform the etching without leaving a residue on the gate insulating film, it is appropriate that an etching time is increased by a rate on the order of 10 to 20%.
In the above first etching process, by making the shapes of the masks consisting of resist suitable, the end portions of the first conductive layer and the second conductive layer become the tapered shape by the effect of the bias voltage applied to the substrate side. The angle of the taper portion becomes 15 to 45°. In this way, first shape conductive layers 521 to 526 consisting of the first conductive layers and the second conductive layers (the first conductive layers 521 a to 526 a and the second conductive layers 521 b to 526 b) are formed by the first etching process. Reference numeral 520 denotes a gate insulating film, and regions which are not covered with the first shape conductive layers 521 to 526 are etched by about 20 to 50 nm so that thinned regions are formed.
Then, a first doping process is performed without removing the masks consisting of resist, and an impurity element imparting an n-type is added to the semiconductor layer (
An etching reaction to the W film or the TaN film by the mixture gas of CF4 and Cl2 can be guessed from a vapor pressure between a generated radical or an ion species and a reaction product. When the vapor pressures of fluoride and chloride of W and TaN are compared with each other, WF6 which is a fluoride of W is extremely high, and other WCl5, TaF5, and TaCl5 have almost equal vapor pressures. Thus, in the mixture gas of CF4 and Cl2, both W and TaN films are etched. However, when a suitable amount of O2 is added to this mixture gas, CF4 and O2 react with each other to form CO and F, and F radical or F ion generates in a large amount. As a result, an etching rate of the W film having the high vapor pressure of fluoride is increased. On the other hand, with respect to TaN, even if F is increased, an increase of the etching rate is relatively small. Besides, since TaN is easily oxidized as compared with W, the surface of TaN is oxidized a little by an addition of O2. Since the oxide of TaN does not react with fluorine or chlorine, the etching rate of the TaN film is further decreased. Accordingly, it becomes possible to make a difference between the etching rates of the W film and the TaN film, with the result that it becomes possible to make the etching rate of the W film higher than that of the TaN film.
Subsequently, as shown in
In this way, second impurity regions 539 to 543 overlapping with the second conductive layers 533 a to 537 a and first impurity regions 550 to 554 are formed. The impurity element imparting the n-type is made to have a concentration of from 1×1017 to 1×1019 atoms/cm3 in the second impurity regions.
Subsequently, as shown in
Then, after removing the masks consisting of resist, new masks 555 to 557 consisting of resist are formed, and a third doping process is performed as shown in
By the steps up to this, the impurity regions are formed in the respective semiconductor layers. The third shape conductive layers 544 to 548 overlapping with the semiconductor layers function as gate electrodes. Besides, the layer 549 functions as a source wiring, and the layer 548 functions as a second electrode for forming a storage capacitor.
Subsequently, the masks 555 to 557 consisting of resist are removed, and a first interlayer insulating film 564 covering the whole surface is formed. This first interlayer insulating film 564 is formed from an insulating film containing silicon by a plasma CVD method or a sputtering method into a thickness of from 100 to 200 nm. In this embodiment, a silicon oxynitride film with a film thickness of 150 nm is formed by the plasma CVD method. Of course, the first interlayer insulating film 564 is not particularly limited to the silicon oxynitride film, but an insulating film containing another silicon may be formed into a single layer or a lamination structure.
Then, as shown in
Further, an activation process may be performed before forming the first interlayer insulating film 564. However, in the case where a wiring material used for the layers 544 to 548 is weak to heat, it is preferable that the activation process is performed after an interlayer insulating film (containing silicon as its main ingredient, for example, silicon nitride film) is formed to protect the wiring or the like as in this embodiment.
In addition, heat treatment at 300 to 550° C. for 1 to 12 hours is performed in an atmosphere containing hydrogen of 3 to 100% to perform a step of hydrogenating the semiconductor layers. This step is a step of terminating dangling bonds in the semiconductor layer by thermally excited hydrogen. As another means for hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) may be carried out.
Besides, in the case of using the laser annealing method as the activation process, it is preferred to irradiate laser light such as an excimer laser or a YAG laser after the hydrogenating process.
Next, a second interlayer insulating film 565 made of an organic insulating material is formed on the first interlayer insulating film 564. Then, patterning is performed for forming a contact hole reaching the source wiring 549 and the contact holes reaching the respective impurity regions 550, 552, 553, 558, and 561.
Then, in a driver circuit 706, wirings 566 to 571 electrically connecting to the first impurity region or the fourth impurity region, respectively, are formed. Note that these wirings are formed by patterning a lamination film of a Ti film having a film thickness of 50 nm and an alloy film (alloy film of Al and Ti) having a film thickness of 500 nm.
In a pixel portion 707, a pixel electrode 574, a gate conductive film 573, and a connection electrode 572 are formed (
In the manner as described above, the driving circuit 706 including an n-channel TFT 701, a p-channel TFT 702, and an n-channel TFT 703, and the pixel portion 707 including the pixel TFT 704 and a storage capacitor 705 can be formed on the same substrate. In the present specification, such a substrate is called an active matrix substrate for convenience.
The n-channel TFT 701 of the driving circuit 706 includes a channel forming region 575, the third impurity region 539 b (GOLD region) overlapping with the third shape conductive layer 544 forming the gate electrode, the second impurity region 539 a (LDD region) formed outside the gate electrode, and the first impurity region 550 functioning as a source region or a drain region. The p-channel TFT 702 includes a channel forming region 576, a fourth impurity region 560 overlapping with the third shape conductive layer 545 forming the gate electrode, a fourth impurity region 559 formed outside the gate electrode, and the fourth impurity region 558 functioning as a source region or a drain region. The n-channel TFT 703 includes a channel forming region 577, the third impurity region 541 b (GOLD region) overlapping with the third shape conductive layer 546 forming the gate electrode, a second impurity region 541 a (LDD region) formed outside the gate electrode, and the first impurity region 552 functioning as a source region or a drain region. The pixel TFT 704 of the pixel portion includes a channel forming region 578, the third impurity region 542 b (GOLD region) overlapping with the third shape conductive layer 547 forming the gate electrode, a second impurity region 542 a (LDD region) formed outside the gate electrode, and the first impurity region 553 functioning as a source region or a drain region. Besides, an impurity element imparting p-type is added to the respective semiconductor layers 561 to 563 functioning as one of electrodes of the storage capacitor 705 at the same concentration with the fourth impurity region. The storage capacitor 705 is formed mainly from the second electrode 548 and the semiconductor layers 561 to 563 using the insulating film (the same film with the gate insulating film) as a dielectric member.
A top view of the pixel portion of the active matrix substrate manufactured in this embodiment is shown in
Like this, the active matrix substrate having a pixel structure according to the present embodiment has a feature such that the first electrode 547 a part of which functions as the gate electrode and a gate wiring 573 are formed on the different layers so that the light shielding of the semiconductor layers are performed by the gate wiring 573.
Further, in the pixel structure of the present embodiment, an end portion of the pixel electrode is formed by arranging it so as to overlap with the source wiring so that the gap between the pixel electrodes is shielded from light without using a black matrix.
Besides, it is preferred that the surface of the pixel electrode in accordance with this embodiment is made uneven by a known method such as a sand plaster method or an etching method, and a whitening degree is increased by scattering the reflection light, while preventing a mirror-reflection.
By taking the above-mentioned pixel structure, a pixel electrode having a larger area may be arranged, thereby capable of improving an aperture ratio.
In addition, in accordance with the process steps of this embodiment, the number of photo masks needed for the manufacture of the active matrix substrate may be made into five pieces (a patterning mask of semiconductor layers 578, and 579, and a patterning mask of a first wiring (including the first electrode 547, the second electrode 548, and the source wiring 549)), a patterning mask for forming a source region and a drain region of a p-type TFT, and a patterning mask of a second wiring (including the pixel electrodes 574, and 581, the connection electrode 572, and the gate wiring 573). As a result, it can contribute to shorten the manufacturing steps, to lower the manufacturing cost, and to improve the yields.
Then, in a driver circuit 706, wirings 566 to 571 each electrically connected to the first impurity region or the fourth impurity region are formed. Note that those wirings are formed by patterning the lamination film of Ti film having a film thickness of 50 nm and an alloy film (alloy film of Al and Ti) having a film thickness of 500 nm. Besides, in a pixel portion 707, pixel electrodes 583 and 584, a gate electrode 573, and a connection electrode 572 are formed. Like this, the active matrix substrate that is suitable for the transmission type liquid crystal display device can be formed by increasing the number of masks by one.
In this embodiment, descriptions will be made of another embodiment. The contents are similar to that in Embodiment 1, and therefore references may be made to the drawings shown in Embodiment 1.
Until the formation of the protective film, the same manufacturing process may be performed similarly as in Embodiment 1. After the formation of the protective film, dehydrogenation of the amorphous silicon film (500° C. for 1 hour) and the subsequent thermal crystallization (550° C. for 4 hours) are performed. In this case, the thermal crystallization may be performed by a known method without adding a catalyst element such as Ni.
To control the threshold voltage (Vth) of the n-channel TFT, an impurity element imparting the p-type is then added thereto. As an impurity element that imparts the p-type to the semiconductor layer, boron (B), aluminum (Al), gallium (Ga), etc., belonging to the Group 13 of periodic table are known. In this embodiment, boron (B) is added thereto.
Then, the protective film is removed. The subsequent process steps after the continuous processing of washing of the semiconductor surface and laser annealing are performed similarly as in Embodiment 1.
Another embodiment of the present invention will be described with reference to
As a substrate 600, a glass substrate, a quartz substrate, a ceramic substrate or the like may be used. A silicon substrate, a metallic substrate or a stainless substrate having an insulating film formed on the surface of the substrate may also be used. In addition, a plastic substrate having heat resistance to a process temperature of this embodiment may be used.
Then, as shown in
Then, an amorphous semiconductor film 602 is formed on the base film 601 in a second film formation chamber. The amorphous semiconductor film is formed into a thickness of from 30 to 60 nm. The material of the amorphous semiconductor film is not particularly limited, but is preferably formed from silicon, a silicon germanium (SiGe) alloy, or the like. In this embodiment, the amorphous silicon film is formed using SiH4 gas by a plasma CVD method.
Further, the base film and the amorphous semiconductor film can be formed by the same film formation method, and therefore the base film 601 and the amorphous semiconductor film 602 can be formed continuously.
Subsequently, a first laser annealing is performed by using a laser apparatus. It is recognized that it is difficult to crystallize by laser annealing the amorphous semiconductor film which has been subjected to doping. Therefore, the laser annealing is performed for the purpose of advancing the crystallization to some extent. The conditions of the laser annealing may be appropriately determined by an operator.
Then, a silicon oxide film 604 as a protective film is formed in a third film formation chamber. For example, in the case where a plasma CVD method is used, TEOS (tetraethyl orthosilicate) and O2 are mixed to form the protective film having a thickness of from 100 nm to 150 nm.
Then, to control the threshold voltage (Vth) of the n-channel type TFT, an impurity element imparting a p-type is added thereto by a doping apparatus (
After performing the addition of boron, crystallization of the semiconductor film 603 is performed by a laser apparatus without removing the silicon oxide film 604 as the protective film. The conditions of this crystallization may appropriately be determined by an operator. After the crystallization, the silicon oxide film 604 as the protective film is removed (
Thereafter, the same process procedures may be taken as in Embodiment 1 from the formation of an island-like semiconductor layer.
In this embodiment, by referring to drawings, description will be made of a method of simultaneously forming on the same substrate a pixel portion and TFTs (n-channel TFT and p-channel TFT) for forming a driver circuit in the periphery of the pixel portion.
First, as shown in
The gate electrode formed by using the first photo mask is formed into a thickness of from 200 to 400 nm, preferably 250 nm, and to enhance the coating property (step coverage) of a coating film formed on the upper layer of the gate electrode, an end portion of the coating film is formed into a taper shape. The tapered portion is formed so that an angle of the tapered portion becomes 5 to 30°, preferably 15 to 25°. The tapered portion is formed by a dry etching method, and the angle of the tapered portion is adjusted by an etching gas and a bias voltage applied to a substrate side.
Subsequently, as shown in
The first insulating layer 1808 is used as the gate insulating film by forming a semiconductor layer on the upper layer. However, the first insulating layer 1808 also functions as a blocking layer for preventing an impurity such as alkali metal from diffusing from the substrate 1801 to the semiconductor layer. A crystalline semiconductor film 1809 is formed into a thickness of from 30 to 100 nm, preferably 40 to 60 nm on the first insulating layer 1808. The material of the crystalline semiconductor film is not particularly limited, but may be formed typically from silicon or an alloy of silicon germanium (SixGe1-x; x=0.01 to 2 atomic %). The crystalline semiconductor film may be formed by any one of the methods described in Embodiments 1, 2 and 3.
A semiconductor layer 1809 formed from a polycrystalline semiconductor is formed into a predetermined pattern using a second photo mask.
Thereafter, an insulating film made from silicon oxide or silicon nitride is formed into a thickness of from 100 to 200 nm on the divided semiconductor layers 1810 to 1813. As shown in
Then, a first doping step for forming LDD regions of n-channel TFT is performed. An ion doping method or an ion implanting method may be used as the doping method. Phosphorus (P) is added as an n-type impurity (donor), and the first impurity regions 1819 to 1822, which are formed using as masks the third insulating layers 1814 to 1818, are formed. The concentrations of the donors in these regions are set between 1×1016 to 2×1017/cm3.
A second doping step is a step of forming a source region and a drain region of the n-channel TFT, and as shown in
It is preferred that, almost simultaneously with the second doping step, etching treatment is performed by fluoric acid under a state that the masks 1823 to 1825 are formed, to thereby remove the third insulating layers 1814 and 1818.
The formation of a source region and a drain region of the p-channel TFT is performed by a third doping step, as shown in
Subsequently, as shown in
With this heat treatment, the activation of the impurity element is performed, and at the same time, hydrogen within a silicon nitride film or a silicon oxynitride film of the first layer 1832 of the second insulating layers is radiated, thereby being capable of hydrogenation of the semiconductor layer. This step is a step of terminating by hydrogen a dangling bond of the semiconductor layer. As means for efficiently performing hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) may be performed before forming the first layer 1832 of the second insulating layer.
A second layer 1833 of the second insulating layers shown in
Subsequently, contact holes are formed using a fifth photo mask. A connection electrode 1834 and source or drain wirings 1835 to 1837 are then formed in a driver circuit 1905 using a sixth photo mask and using aluminum (Al), titan (Ti), tantalum (Ta) or the like. Besides, in a pixel portion 1906, a pixel electrode 1840, a gate wiring 1839, and a connection electrode 1838 are formed.
Thus, the driver circuit having a p-channel TFT 1901 and an n-channel TFT 1902 and the pixel portion 1906 having a pixel TFT 1903 and a storage capacitor 1904 are formed on the same substrate. In the p-channel TFT 1901 of the driver circuit 1905, a channel forming region 1907 and a source or a drain region 1908 made from the third impurity region are formed. In an n-channel TFT 1902, there are formed a channel forming region 1909, an LDD region 1910 made from the first impurity region, and a source or a drain region 1911 formed from the second impurity region. The pixel TFT 1903 of the pixel portion 1906 has a multi-gate structure, and a channel forming region 1912, an LDD region 1913, and source or drain regions 1914 and 1916 are formed therein. The second impurity region located between LDD regions is effective for lowering an off-current. The storage capacitor 1904 is constructed of the capacitor wiring 1805, the semiconductor layer 1813, and the first insulating layer formed therebetween.
In the pixel portion 1906, the source wiring 1807 is electrically connected to the source or drain region 1914 of the pixel TFT 1903 through the connection electrode 1838. Besides, the gate wiring 1839 is electrically connected to the first electrode 1804. Further, the pixel electrode 1840 is connected to the source or drain region 1916 of the pixel TFT 1903 and to the semiconductor layer 1813.
One of the merits for forming a TFT into a reverse stagger type resides in that an LDD region overlapping with the gate electrode can be formed in the n-channel TFT in a self aligning manner by an exposure process from the back surface of the substrate, and in association with such a feature that the gate insulating film and the semiconductor layer can be formed continuously, the fluctuation of electrical characteristics of the TFT can be reduced.
The pixel structure shown in
In this embodiment, an example will be described that EL display device is formed using active matrix substrate formed according to the above mentioned Embodiments 1 to 4. The EL (electro-luminescence) display device referred to in this specification includes triplet-based light emission devices and/or singlet-based light emission devices, for example.
As it is, the active matrix substrate 10 and the counter substrate 80 are attached together with a sealant 19, space is generated therebetween. A filler 83 is filled with the space. The filler 83 has an effect of attachment of the counter substrate 80. The PVC (polyvinyl chloride), epoxy resin, silicone resin and EVA (ethylene vinyl acetate) can be used as the filler 83. A self-emitting layer is weak to moisture such as water and is likely to be degraded, so that it is preferable to mix a drying agent such as barium oxide in the filler 83 so as to keep an effect of moisture absorption. Further, a passivation film 82 is formed on the self-emitting layer by the silicon nitride film and silicon oxynitride film to protect from corrosion by alkali element which contains in the filler 83.
To manufacture the EL display device from an active matrix substrate in a state of Embodiments 1 to 4, an interlayer insulating film (a flattening film) 26 made of resin material, is formed on the source wiring, the drain wiring and a pixel electrode 27 made of a transparent conductive film, which is connected electrically to drain of the TFT 23 for a pixel portion, is formed thereon. As a transparent conductive film, a compound of indium oxide and tin oxide (which is called as ITO), and a compound of indium oxide and zinc oxide can be used. After forming the pixel electrode 27, an insulating film 28 is formed, and an opening portion is formed on the pixel electrode 27.
Next, a self-emitting layer 29 is formed. The self-emitting layer 29 may have a lamination structure including an appropriate combination of layers made of known EL materials (hole injection layer, hole transporting layer, light-emitting layer, electron transportation layer, or electron injection layer) or a single structure. Such a structure can be obtained by a known technique. Furthermore, examples of the EL material include a low molecular-weight material and polymer material. In the case of using a low molecular-weight material, vapor deposition is used. In the case of using a polymer material, a simple method such as spin coating, printing, and an ink jet method can be used.
In this embodiment, the EL layer is formed by vapor deposition, ink jet method or dispenser method using a shadow mask. By forming light-emitting layers (red light-emitting layer, green-light emitting layer, and blue light-emitting layer) capable of emitting light with different wavelengths on respective pixels, a color display can be performed. In addition, a combination of a color conversion layer (CCM) and a color filter, or a combination of a white light-emitting layer and a color filter may be used. Needless to say, an EL display device emitting single color light can also be used.
When the self-emitting layer 29 is formed, a cathode 30 is formed thereon. It is desirable to remove moisture and oxygen present at an interface between the cathode 30 and the self-emitting layer 29 as much as possible. Thus, it is required to continuously form the self-emitting layer 29 and the cathode 30 in a vacuum, or to form the self-emitting layer 29 in an inactive atmosphere, and form the cathode 30 in a vacuum without exposing the self-emitting layer 29 to the outside air. In this embodiment, a film formation device of a multi-chamber system (cluster tool system) is used to make the above mentioned film formation possible.
The cathode 30 is connected to the wiring 16 in a region denoted by reference numeral 31. The wiring 16 is a power supply line for supplying a predetermined voltage to the cathode 30, and is connected to the FPC 17 via anisotropic conductive paste material 32. A resin layer 80 is further formed on the FPC 17 so as to enhance adhesiveness in this portion.
In order to electrically connect the cathode 30 to the wiring 16 in the region 31, it is required to form contact holes in the interlayer insulating film 26 and the insulating film 28. The contact holes may be formed during etching of the interlayer insulating film 26 (during formation of a contact hole for a pixel electrode) or during etching of the insulating film 28 (during formation of an opening portion before forming the self-emitting layer). Furthermore, when the insulating film 28 is etched, the interlayer insulating film 26 may also be etched together. In this case, if the interlayer insulating film 26 and the insulating film 28 are made of the same resin material, the shape of the contact holes can be made fine.
Furthermore, the wiring 16 is electrically connected to the FPC 17 through a gap between the sealant 19 and the substrate 10 (the gap is filled with a sealant 81). Herein, although description is made with respect to the wiring 16, other wirings 14 and 15 are also electrically connected to the FPC 17 through under the sealant 18.
Furthermore, in this embodiment, the current controlling TFT 2403 has a single gate structure. However, it may have a multi-gate structure in which a plurality of TFTs are connected in series. Furthermore, it may also be possible that a plurality of TFTs are connected in parallel to substantially divide a channel formation region into a plurality of parts, so as to conduct highly efficient heat release. Such a structure is effective for preventing degradation due to heat.
As shown in
A first passivation film 41 is provided on the switching TFT 2402 and the current controlling TFT 2403, and a flattening film 42 that is made of a resin insulating film is formed thereon. It is very important to flatten the step difference due to TFTs by using the flattening film 42. The step difference may cause a light-emitting defect because the self-emitting layer to be formed later is very thin.
Reference numeral 43 denotes a pixel electrode (cathode of an EL element) that is made of a conductive film with high reflectivity and is electrically connected to the drain of the current controlling TFT 2403. As the pixel electrode 43, a low resistant conductive film such as an aluminum alloy film, a copper alloy film, and a silver alloy film, or a lamination film thereof can be preferably used. Needless to say, a lamination structure with other conductive films may also be used. A light-emitting layer 44 is formed in a groove (corresponding to a pixel) formed by banks 44 a and 44 b made of an insulating film (preferably resin). Herein, only one pixel is shown, however, light-emitting layers corresponding to each color R (red), G (green), and B (blue) may be formed. As an organic EL material for the light-emitting layer, polyparaphenylene vinylene (PPV), polyvinyl carbazole (PYK), polyfluorene, a π-conjugate polymer material and so forth are used.
In this embodiment, a self-emitting layer with a lamination structure is used, in which a hole injection layer 46 made of PEDOT (polyethylene dioxythiophene) or PAni (polyaniline) is provided on the light-emitting layer 45. An anode 47 made of a transparent conductive film is provided on the hole injection layer 46. In this embodiment, light generated by the light-emitting layer 45 is irradiated to the upper surface (toward the upper of TFTs), so that the anode must be transparent to light. As a transparent conductive film, a compound of indium oxide and tin oxide, and a compound of indium oxide and zinc oxide can be used. The conductive film is formed after forming the light-emitting layer and the hole injection layer with low heat resistance, so that the conductive film that can be formed at a possibly low temperature is preferably used.
After banks 51 a and 51 b made of an insulating film are formed, a light-emitting layer 52 made of polyvinyl carbazole is formed by coating of a solution. On the light-emitting layer 52, an electron injection layer 53 made of potassium acetyl acetonate (acacK), and a cathode 54 made of an aluminum alloy are formed. In this case, the cathode 54 functions as a passivation film. Thus, an EL element 2602 is formed. In this embodiment, light generated by the light-emitting layer 53 is irradiated toward the substrate on which a TFT is formed as represented by an arrow. In the case of the structure of this embodiment, it is preferable that the current controlling TFT 2601 is formed of a p-channel TFT.
The TFTs formed by this invention can be used in a variety of electro-optical devices (typically, active matrix-type liquid crystal display, etc.). That is, the invention can be applied to every electronic equipment that incorporates the above electro-optical device and semiconductor circuit as parts.
Examples of the electronic equipment include video cameras, digital cameras, projectors (rear type or front type), head mount displays (goggle-type display), car navigation systems, car stereo systems, personal computers, portable data terminals (mobile computers, cellular phones, electronic books, etc.) and the like. Their examples are shown in
Here, the projector shown in
As described above, the invention can be used over a very wide range and can be applied to electronic equipment of every field.
According to the present invention, since the contamination of the surface of a film constituting a TFT due to an atmosphere can be prevented, the fluctuation of TFT characteristics can be made low, and the reliability of the TFT can be improved. Besides, an uneven display of an EL display device which is greatly influenced by the fluctuation of TFT characteristics, because of current driving, can be reduced.
Moreover, by carrying out a doping treatment prior to crystallization, it is possible to prevent the crystal structure from being broken, so that the crystallinity of a crystalline semiconductor layer becomes excellent, and high speed processing of an image etc., high speed communication, or the like becomes possible.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US5578520||15 Jul 1994||26 Nov 1996||Semiconductor Energy Laboratory Co., Ltd.||Method for annealing a semiconductor|
|US5643826||25 Oct 1994||1 Jul 1997||Semiconductor Energy Laboratory Co., Ltd.||Method for manufacturing a semiconductor device|
|US5804471||3 Jun 1996||8 Sep 1998||Semiconductor Energy Laboratory Co., Ltd.||Method of fabricating thin film transistor|
|US5861337||2 Jun 1995||19 Jan 1999||Semiconductor Energy Laboratory Co., Ltd.||Method for annealing a semiconductor|
|US5892235||12 May 1997||6 Apr 1999||Semiconductor Energy Laboratory Co., Ltd.||Apparatus and method for doping|
|US6004831||23 May 1997||21 Dec 1999||Semiconductor Energy Laboratory Co., Ltd.||Method for fabricating a thin film semiconductor device|
|US6027960 *||23 Oct 1996||22 Feb 2000||Semiconductor Energy Laboratory Co., Ltd.||Laser annealing method and laser annealing device|
|US6074901||7 Jun 1995||13 Jun 2000||Semiconductor Energy Laboratory Co., Ltd.||Process for crystallizing an amorphous silicon film and apparatus for fabricating the same|
|US6156997||14 Dec 1998||5 Dec 2000||Semiconductor Energy Laboratory Co., Ltd.||Laser processing method and laser processing apparatus|
|US6177302||22 Sep 1994||23 Jan 2001||Semiconductor Energy Laboratory Co., Ltd.||Method of manufacturing a thin film transistor using multiple sputtering chambers|
|US6261881||19 Aug 1999||17 Jul 2001||Semiconductor Energy Laboratory Co., Ltd.||Semiconductor device provided with semiconductor circuit consisting of semiconductor element and method of manufacturing the same|
|US6303963||1 Dec 1999||16 Oct 2001||Semiconductor Energy Laboratory Co., Ltd.||Electro-optical device and semiconductor circuit|
|US6329229||3 Nov 1997||11 Dec 2001||Semiconductor Energy Laboratory Co., Ltd.||Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device|
|US6506636 *||9 May 2001||14 Jan 2003||Semiconductor Energy Laboratory Co., Ltd.||Method of manufacturing a semiconductor device having a crystallized amorphous silicon film|
|US6566175||11 Jun 2001||20 May 2003||Semiconductor Energy Laboratory Co., Ltd.||Method of manufacturing gate insulated field effect transistors|
|US6605496||14 Sep 1998||12 Aug 2003||Semiconductor Energy Laboratory Co., Ltd.||Method of fabricating a bottom-gate-type thin film transistor using a heat relaxation layer during laser crystallization|
|US20010003659||9 Jan 1998||14 Jun 2001||Yoichiro Aya||Method of manufacturing a semiconductor device|
|JPH0878329A||Title not available|
|JPH04124813A||Title not available|
|JPH07130652A||Title not available|
|U.S. Classification||438/482, 257/E29.151, 257/E21.133, 257/E29.278, 257/E21.413, 257/E27.111, 438/487, 257/E21.414, 257/E29.297|
|International Classification||G02F1/1368, H01L21/304, G02F1/136, H01L29/49, H01L29/786, H01L21/20, H01L27/12, H01L21/336, H01L21/205|
|Cooperative Classification||Y10T29/41, H01L27/12, H01L29/78684, H01L29/66757, H01L21/2022, H01L29/4908, H01L29/78621, H01L29/66765, H01L2029/7863|
|European Classification||H01L29/66M6T6F15A2, H01L29/66M6T6F15A3, H01L29/786B4B, H01L29/49B, H01L21/20D, H01L27/12, H01L29/786G|
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