US7009215B2 - Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates - Google Patents
Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates Download PDFInfo
- Publication number
- US7009215B2 US7009215B2 US10/693,803 US69380303A US7009215B2 US 7009215 B2 US7009215 B2 US 7009215B2 US 69380303 A US69380303 A US 69380303A US 7009215 B2 US7009215 B2 US 7009215B2
- Authority
- US
- United States
- Prior art keywords
- resonant cavity
- stack
- light emitting
- gallium nitride
- group iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (29)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/693,803 US7009215B2 (en) | 2003-10-24 | 2003-10-24 | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
PCT/US2004/035028 WO2005043638A1 (en) | 2003-10-24 | 2004-10-22 | Group iii-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
EP04796085A EP1680817B1 (en) | 2003-10-24 | 2004-10-22 | Group iii-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates and method for their production |
CNB2004800151167A CN100472821C (en) | 2003-10-24 | 2004-10-22 | Group iii-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
JP2006536820A JP2007509507A (en) | 2003-10-24 | 2004-10-22 | Group III nitride cavity light emitting device fabricated on single crystal gallium nitride substrate |
KR1020057020687A KR101293307B1 (en) | 2003-10-24 | 2004-10-22 | Group iii-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
US11/295,627 US7582498B2 (en) | 2003-10-24 | 2005-12-06 | Resonant cavity light emitting devices and associated method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/693,803 US7009215B2 (en) | 2003-10-24 | 2003-10-24 | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/295,627 Continuation-In-Part US7582498B2 (en) | 2003-10-24 | 2005-12-06 | Resonant cavity light emitting devices and associated method |
Publications (2)
Publication Number | Publication Date |
---|---|
US20050087753A1 US20050087753A1 (en) | 2005-04-28 |
US7009215B2 true US7009215B2 (en) | 2006-03-07 |
Family
ID=34522480
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/693,803 Expired - Lifetime US7009215B2 (en) | 2003-10-24 | 2003-10-24 | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
US11/295,627 Expired - Fee Related US7582498B2 (en) | 2003-10-24 | 2005-12-06 | Resonant cavity light emitting devices and associated method |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/295,627 Expired - Fee Related US7582498B2 (en) | 2003-10-24 | 2005-12-06 | Resonant cavity light emitting devices and associated method |
Country Status (6)
Country | Link |
---|---|
US (2) | US7009215B2 (en) |
EP (1) | EP1680817B1 (en) |
JP (1) | JP2007509507A (en) |
KR (1) | KR101293307B1 (en) |
CN (1) | CN100472821C (en) |
WO (1) | WO2005043638A1 (en) |
Cited By (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050110029A1 (en) * | 2003-11-26 | 2005-05-26 | Hidekazu Aoyagi | Light-emitting semiconductor device and method of fabrication |
US20060148186A1 (en) * | 2005-01-03 | 2006-07-06 | Samsung Electro-Mechanics Co., Ltd. | Method and apparatus for manufacturing gallium nitride based single crystal substrate |
US20060227835A1 (en) * | 2005-04-08 | 2006-10-12 | Fuji Xerox Co., Ltd. | Surface-emitting laser diode with tunnel junction and fabrication method thereof |
US20060228819A1 (en) * | 2005-04-11 | 2006-10-12 | Hitachi Cable, Ltd. | Method of making nitride-based compound semiconductor crystal and substrate |
US20070096142A1 (en) * | 2005-08-29 | 2007-05-03 | Kabushiki Kaisha Toshiba | Semiconductor device |
US20070111531A1 (en) * | 2005-03-10 | 2007-05-17 | The Regents Of The University Of California | Technique for the growth of planar semi-polar gallium nitride |
US20070120129A1 (en) * | 1999-11-19 | 2007-05-31 | Cree, Inc. | Rare earth doped layer or substrate for light conversion |
US20080067523A1 (en) * | 2004-06-11 | 2008-03-20 | Robert Dwilinski | High Electron Mobility Transistor (Hemt) Made of Layers of Group XIII Element Nitrides and Manufacturing Method Thereof |
US20080107144A1 (en) * | 2004-08-15 | 2008-05-08 | Skierbiszewski Czeslaw | Nitride Based Laser Diode and Method of Manufacturing Nitride Based Laser Diode |
US20080191233A1 (en) * | 2007-02-13 | 2008-08-14 | Epistar Corporation | Light-emitting diode and method for manufacturing the same |
US20080197369A1 (en) * | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double flip semiconductor device and method for fabrication |
US7425503B1 (en) * | 2004-05-25 | 2008-09-16 | National Semiconductor Corporation | Apparatus and method for enhanced thermal conductivity packages for high powered semiconductor devices |
US20080230716A1 (en) * | 2000-10-23 | 2008-09-25 | General Electric Company | Dna biosensor and methods for making and using the same |
US7494546B1 (en) * | 2006-07-14 | 2009-02-24 | Blue Wave Semicodnuctors, Inc. | Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devices |
US20090050911A1 (en) * | 2007-08-24 | 2009-02-26 | Cree, Inc. | Light emitting device packages using light scattering particles of different size |
US20090152573A1 (en) * | 2007-12-14 | 2009-06-18 | Cree, Inc. | Textured encapsulant surface in LED packages |
US20090301387A1 (en) * | 2008-06-05 | 2009-12-10 | Soraa Inc. | High pressure apparatus and method for nitride crystal growth |
US20090301388A1 (en) * | 2008-06-05 | 2009-12-10 | Soraa Inc. | Capsule for high pressure processing and method of use for supercritical fluids |
US20090320745A1 (en) * | 2008-06-25 | 2009-12-31 | Soraa, Inc. | Heater device and method for high pressure processing of crystalline materials |
US20090320744A1 (en) * | 2008-06-18 | 2009-12-31 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US20100001300A1 (en) * | 2008-06-25 | 2010-01-07 | Soraa, Inc. | COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs |
US20100003492A1 (en) * | 2008-07-07 | 2010-01-07 | Soraa, Inc. | High quality large area bulk non-polar or semipolar gallium based substrates and methods |
US20100025656A1 (en) * | 2008-08-04 | 2010-02-04 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
US20100031876A1 (en) * | 2008-08-07 | 2010-02-11 | Soraa,Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
US20100031872A1 (en) * | 2008-08-07 | 2010-02-11 | Soraa, Inc. | Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride |
US20100031875A1 (en) * | 2008-08-07 | 2010-02-11 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US20100031874A1 (en) * | 2008-08-07 | 2010-02-11 | Soraa, Inc. | Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer |
US20100151194A1 (en) * | 2008-12-12 | 2010-06-17 | Soraa, Inc. | Polycrystalline group iii metal nitride with getter and method of making |
US20100224890A1 (en) * | 2006-09-18 | 2010-09-09 | Cree, Inc. | Light emitting diode chip with electrical insulation element |
US20100295088A1 (en) * | 2008-10-02 | 2010-11-25 | Soraa, Inc. | Textured-surface light emitting diode and method of manufacture |
US20100295073A1 (en) * | 2007-06-26 | 2010-11-25 | Osram Opto Semiconductors Gmbh | Optoelectronic Semiconductor Chip |
US20110100291A1 (en) * | 2009-01-29 | 2011-05-05 | Soraa, Inc. | Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules |
US20110220912A1 (en) * | 2010-03-11 | 2011-09-15 | Soraa, Inc. | Semi-insulating Group III Metal Nitride and Method of Manufacture |
US8148801B2 (en) | 2008-08-25 | 2012-04-03 | Soraa, Inc. | Nitride crystal with removable surface layer and methods of manufacture |
US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
US8306081B1 (en) | 2009-05-27 | 2012-11-06 | Soraa, Inc. | High indium containing InGaN substrates for long wavelength optical devices |
US8354679B1 (en) | 2008-10-02 | 2013-01-15 | Soraa, Inc. | Microcavity light emitting diode method of manufacture |
US8435347B2 (en) | 2009-09-29 | 2013-05-07 | Soraa, Inc. | High pressure apparatus with stackable rings |
US8455894B1 (en) | 2008-10-17 | 2013-06-04 | Soraa, Inc. | Photonic-crystal light emitting diode and method of manufacture |
US8482104B2 (en) | 2012-01-09 | 2013-07-09 | Soraa, Inc. | Method for growth of indium-containing nitride films |
US8729559B2 (en) | 2010-10-13 | 2014-05-20 | Soraa, Inc. | Method of making bulk InGaN substrates and devices thereon |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US8871024B2 (en) | 2008-06-05 | 2014-10-28 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8931906B2 (en) | 2010-08-27 | 2015-01-13 | Industrial Technology Research Institute | Light emitting unit array and projection system |
US8987156B2 (en) | 2008-12-12 | 2015-03-24 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US9157167B1 (en) | 2008-06-05 | 2015-10-13 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US9175418B2 (en) | 2009-10-09 | 2015-11-03 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
US9231376B2 (en) | 2004-05-10 | 2016-01-05 | The Regents Of The University Of California | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices |
US9543392B1 (en) | 2008-12-12 | 2017-01-10 | Soraa, Inc. | Transparent group III metal nitride and method of manufacture |
US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
US10036099B2 (en) | 2008-08-07 | 2018-07-31 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
USRE47114E1 (en) | 2008-12-12 | 2018-11-06 | Slt Technologies, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US10208396B2 (en) * | 2002-12-27 | 2019-02-19 | Soraa, Inc. | Crystalline gallium nitride containing flourine |
US10361339B2 (en) * | 2014-11-12 | 2019-07-23 | Seoul Viosys Co., Ltd. | Light emitting device and manufacturing method therefor |
Families Citing this family (215)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4340757B2 (en) * | 2002-11-25 | 2009-10-07 | 独立行政法人産業技術総合研究所 | Semiconductor device |
US7859008B2 (en) * | 2002-12-27 | 2010-12-28 | Momentive Performance Materials Inc. | Crystalline composition, wafer, device, and associated method |
US7786503B2 (en) * | 2002-12-27 | 2010-08-31 | Momentive Performance Materials Inc. | Gallium nitride crystals and wafers and method of making |
US8357945B2 (en) * | 2002-12-27 | 2013-01-22 | Momentive Performance Materials Inc. | Gallium nitride crystal and method of making same |
US7638815B2 (en) * | 2002-12-27 | 2009-12-29 | Momentive Performance Materials Inc. | Crystalline composition, wafer, and semi-conductor structure |
KR101284932B1 (en) * | 2002-12-27 | 2013-07-10 | 제너럴 일렉트릭 캄파니 | Gallium nitride crystal, homoepitaxial gallium nitride-based devices and method for producing same |
KR101034055B1 (en) * | 2003-07-18 | 2011-05-12 | 엘지이노텍 주식회사 | Light emitting diode and method for manufacturing light emitting diode |
KR100624411B1 (en) * | 2003-08-25 | 2006-09-18 | 삼성전자주식회사 | light emitting device and method of manufacturing the same |
JP3841092B2 (en) * | 2003-08-26 | 2006-11-01 | 住友電気工業株式会社 | Light emitting device |
TWI227584B (en) * | 2003-10-07 | 2005-02-01 | Ind Tech Res Inst | Surface-emitting laser and its fabricating method |
JP4340866B2 (en) * | 2003-11-14 | 2009-10-07 | 日立電線株式会社 | Nitride semiconductor substrate and manufacturing method thereof |
JP2011082528A (en) * | 2003-11-26 | 2011-04-21 | Ricoh Co Ltd | Semiconductor light-emitting device |
JP2005191530A (en) * | 2003-12-03 | 2005-07-14 | Sumitomo Electric Ind Ltd | Light emitting device |
JP2005268581A (en) * | 2004-03-19 | 2005-09-29 | Matsushita Electric Ind Co Ltd | Gallium nitride family compound semiconductor light emitting device |
US7683391B2 (en) * | 2004-05-26 | 2010-03-23 | Lockheed Martin Corporation | UV emitting LED having mesa structure |
JP4206086B2 (en) * | 2004-08-03 | 2009-01-07 | 住友電気工業株式会社 | Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device |
US20060054919A1 (en) * | 2004-08-27 | 2006-03-16 | Kyocera Corporation | Light-emitting element, method for manufacturing the same and lighting equipment using the same |
KR101217659B1 (en) * | 2004-09-03 | 2013-01-02 | 스탠리 일렉트릭 컴퍼니, 리미티드 | Electroluminescence element |
US7935973B2 (en) * | 2004-10-21 | 2011-05-03 | Ube Industries, Ltd. | Light-emitting diode, light-emitting diode substrate and production method of light-emitting diode |
KR100552857B1 (en) * | 2004-10-25 | 2006-02-22 | 동부아남반도체 주식회사 | Method for fabricating contact of semiconductor device |
US8575651B2 (en) * | 2005-04-11 | 2013-11-05 | Cree, Inc. | Devices having thick semi-insulating epitaxial gallium nitride layer |
US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
JP4670489B2 (en) * | 2005-06-06 | 2011-04-13 | 日立電線株式会社 | Light emitting diode and manufacturing method thereof |
US9331192B2 (en) * | 2005-06-29 | 2016-05-03 | Cree, Inc. | Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same |
KR101111720B1 (en) * | 2005-10-12 | 2012-02-15 | 삼성엘이디 주식회사 | Edge emitting semiconductor laser diode with dielectric layer on active layer |
KR101416838B1 (en) | 2006-02-10 | 2014-07-08 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | Method for conductivity control of (Al,In,Ga,B)N |
JP4187175B2 (en) * | 2006-03-13 | 2008-11-26 | 国立大学法人東北大学 | Method for producing gallium nitride material |
JP2007246303A (en) * | 2006-03-14 | 2007-09-27 | Ricoh Co Ltd | Group iii nitride crystal and production method thereof |
JP4766620B2 (en) * | 2006-03-23 | 2011-09-07 | 日本碍子株式会社 | Nitride single crystal manufacturing equipment |
WO2007112066A2 (en) | 2006-03-24 | 2007-10-04 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures and related methods for device fabrication |
US8236267B2 (en) * | 2008-06-04 | 2012-08-07 | Sixpoint Materials, Inc. | High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal |
US9803293B2 (en) * | 2008-02-25 | 2017-10-31 | Sixpoint Materials, Inc. | Method for producing group III-nitride wafers and group III-nitride wafers |
US20100095882A1 (en) * | 2008-10-16 | 2010-04-22 | Tadao Hashimoto | Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals |
US8764903B2 (en) | 2009-05-05 | 2014-07-01 | Sixpoint Materials, Inc. | Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride |
KR100735311B1 (en) * | 2006-04-21 | 2007-07-04 | 삼성전기주식회사 | Light emitting diode chip |
EP2041794A4 (en) * | 2006-06-21 | 2010-07-21 | Univ California | Opto-electronic and electronic devices using n-face or m-plane gan substrate prepared with ammonothermal growth |
KR100850950B1 (en) * | 2006-07-26 | 2008-08-08 | 엘지전자 주식회사 | Nitride based light emitting diode |
JP4110181B2 (en) * | 2006-09-01 | 2008-07-02 | キヤノン株式会社 | Semiconductor laser device |
US8173551B2 (en) | 2006-09-07 | 2012-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Defect reduction using aspect ratio trapping |
US7875958B2 (en) | 2006-09-27 | 2011-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures |
JP5480624B2 (en) * | 2006-10-08 | 2014-04-23 | モーメンティブ・パフォーマンス・マテリアルズ・インク | Method for forming nitride crystal |
EP2100990A1 (en) | 2006-10-16 | 2009-09-16 | Mitsubishi Chemical Corporation | Process for producing nitride semiconductor, crystal growth rate enhancement agent, nitride single crystal, wafer and device |
WO2008051503A2 (en) | 2006-10-19 | 2008-05-02 | Amberwave Systems Corporation | Light-emitter-based devices with lattice-mismatched semiconductor structures |
US8193020B2 (en) | 2006-11-15 | 2012-06-05 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition |
US20080111144A1 (en) * | 2006-11-15 | 2008-05-15 | The Regents Of The University Of California | LIGHT EMITTING DIODE AND LASER DIODE USING N-FACE GaN, InN, AND AlN AND THEIR ALLOYS |
CA2669228C (en) * | 2006-11-15 | 2014-12-16 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition |
JP2010510655A (en) * | 2006-11-15 | 2010-04-02 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Light emitting diode and laser diode using N-plane GaN, InN and AlN and their alloys |
JP4821007B2 (en) * | 2007-03-14 | 2011-11-24 | 国立大学法人大阪大学 | Method for producing group III element nitride crystal and group III element nitride crystal |
US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
US9508890B2 (en) | 2007-04-09 | 2016-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photovoltaics on silicon |
US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
US7825328B2 (en) | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
JP4904210B2 (en) * | 2007-06-18 | 2012-03-28 | 住友電気工業株式会社 | Method for manufacturing group III nitride crystal substrate |
DE102007032555A1 (en) * | 2007-07-12 | 2009-01-15 | Osram Opto Semiconductors Gmbh | Semiconductor chip and method for producing a semiconductor chip |
KR20100037169A (en) * | 2007-08-08 | 2010-04-08 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | Nonpolar iii-nitride light emitting diodes with long wavelength emission |
DE112008002387B4 (en) | 2007-09-07 | 2022-04-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure of a multijunction solar cell, method of forming a photonic device, photovoltaic multijunction cell and photovoltaic multijunction cell device, |
JP2009188249A (en) * | 2008-02-07 | 2009-08-20 | Nanoteco Corp | Light-emitting diode and method of manufacturing the same, and light-emitting diode array |
US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
TWI460322B (en) | 2008-06-04 | 2014-11-11 | Sixpoint Materials Inc | Methods for producing improved crystallinity group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth |
WO2010065163A2 (en) * | 2008-06-05 | 2010-06-10 | Soraa, Inc. | Highly polarized white light source by combining blue led on semipolar or nonpolar gan with yellow led on semipolar or nonpolar gan |
WO2009151642A1 (en) | 2008-06-12 | 2009-12-17 | Sixpoint Materials, Inc. | Method for testing group-iii nitride wafers and group iii-nitride wafers with test data |
US20090309127A1 (en) * | 2008-06-13 | 2009-12-17 | Soraa, Inc. | Selective area epitaxy growth method and structure |
US8847249B2 (en) | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
US9404197B2 (en) | 2008-07-07 | 2016-08-02 | Soraa, Inc. | Large area, low-defect gallium-containing nitride crystals, method of making, and method of use |
US8805134B1 (en) | 2012-02-17 | 2014-08-12 | Soraa Laser Diode, Inc. | Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices |
US8259769B1 (en) | 2008-07-14 | 2012-09-04 | Soraa, Inc. | Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates |
US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
US7976630B2 (en) | 2008-09-11 | 2011-07-12 | Soraa, Inc. | Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture |
US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
WO2010033813A2 (en) | 2008-09-19 | 2010-03-25 | Amberwave System Corporation | Formation of devices by epitaxial layer overgrowth |
US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
JP2012507874A (en) * | 2008-10-31 | 2012-03-29 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Optoelectronic devices based on nonpolar or semipolar AlInN and AlInGaN alloys |
WO2010060034A1 (en) * | 2008-11-24 | 2010-05-27 | Sixpoint Materials, Inc. | METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH |
US9589792B2 (en) | 2012-11-26 | 2017-03-07 | Soraa, Inc. | High quality group-III metal nitride crystals, methods of making, and methods of use |
JP5434131B2 (en) * | 2009-02-24 | 2014-03-05 | 富士通株式会社 | Multi-wavelength laser device and manufacturing method thereof |
US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
US8252662B1 (en) | 2009-03-28 | 2012-08-28 | Soraa, Inc. | Method and structure for manufacture of light emitting diode devices using bulk GaN |
CN102379046B (en) | 2009-04-02 | 2015-06-17 | 台湾积体电路制造股份有限公司 | Devices formed from a non-polar plane of a crystalline material and method of making the same |
US8294179B1 (en) | 2009-04-17 | 2012-10-23 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
WO2010120819A1 (en) | 2009-04-13 | 2010-10-21 | Kaai, Inc. | Optical device structure using gan substrates for laser applications |
US8242522B1 (en) | 2009-05-12 | 2012-08-14 | Soraa, Inc. | Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm |
US8254425B1 (en) | 2009-04-17 | 2012-08-28 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8634442B1 (en) | 2009-04-13 | 2014-01-21 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
US8837545B2 (en) | 2009-04-13 | 2014-09-16 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8416825B1 (en) | 2009-04-17 | 2013-04-09 | Soraa, Inc. | Optical device structure using GaN substrates and growth structure for laser applications |
US8791499B1 (en) | 2009-05-27 | 2014-07-29 | Soraa, Inc. | GaN containing optical devices and method with ESD stability |
US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
US8427590B2 (en) | 2009-05-29 | 2013-04-23 | Soraa, Inc. | Laser based display method and system |
US10108079B2 (en) | 2009-05-29 | 2018-10-23 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US9829780B2 (en) | 2009-05-29 | 2017-11-28 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US8247887B1 (en) | 2009-05-29 | 2012-08-21 | Soraa, Inc. | Method and surface morphology of non-polar gallium nitride containing substrates |
US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
JP5446622B2 (en) | 2009-06-29 | 2014-03-19 | 住友電気工業株式会社 | Group III nitride crystal and method for producing the same |
US9000466B1 (en) | 2010-08-23 | 2015-04-07 | Soraa, Inc. | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening |
US8314429B1 (en) | 2009-09-14 | 2012-11-20 | Soraa, Inc. | Multi color active regions for white light emitting diode |
US8355418B2 (en) | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
US8750342B1 (en) | 2011-09-09 | 2014-06-10 | Soraa Laser Diode, Inc. | Laser diodes with scribe structures |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
KR101368906B1 (en) | 2009-09-18 | 2014-02-28 | 소라, 인코포레이티드 | Power light emitting diode and method with current density operation |
US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
JP2011096856A (en) * | 2009-10-29 | 2011-05-12 | Sony Corp | Semiconductor laser |
KR101028314B1 (en) * | 2010-01-29 | 2011-04-12 | 엘지이노텍 주식회사 | Light emitting device and method for fabricating the same |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8740413B1 (en) | 2010-02-03 | 2014-06-03 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US20110186874A1 (en) * | 2010-02-03 | 2011-08-04 | Soraa, Inc. | White Light Apparatus and Method |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US20110182056A1 (en) * | 2010-06-23 | 2011-07-28 | Soraa, Inc. | Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials |
US9927611B2 (en) | 2010-03-29 | 2018-03-27 | Soraa Laser Diode, Inc. | Wearable laser based display method and system |
US8451876B1 (en) | 2010-05-17 | 2013-05-28 | Soraa, Inc. | Method and system for providing bidirectional light sources with broad spectrum |
US9450143B2 (en) | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US20120007102A1 (en) * | 2010-07-08 | 2012-01-12 | Soraa, Inc. | High Voltage Device and Method for Optical Devices |
JP5729182B2 (en) * | 2010-08-31 | 2015-06-03 | 株式会社リコー | Method for producing n-type group III nitride single crystal, n-type group III nitride single crystal and crystal substrate |
US8816319B1 (en) | 2010-11-05 | 2014-08-26 | Soraa Laser Diode, Inc. | Method of strain engineering and related optical device using a gallium and nitrogen containing active region |
US8975615B2 (en) | 2010-11-09 | 2015-03-10 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material |
US9048170B2 (en) | 2010-11-09 | 2015-06-02 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment |
US8896235B1 (en) | 2010-11-17 | 2014-11-25 | Soraa, Inc. | High temperature LED system using an AC power source |
US9595813B2 (en) | 2011-01-24 | 2017-03-14 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a substrate member |
US9318875B1 (en) | 2011-01-24 | 2016-04-19 | Soraa Laser Diode, Inc. | Color converting element for laser diode |
US9025635B2 (en) | 2011-01-24 | 2015-05-05 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
US9093820B1 (en) | 2011-01-25 | 2015-07-28 | Soraa Laser Diode, Inc. | Method and structure for laser devices using optical blocking regions |
WO2012103292A1 (en) * | 2011-01-26 | 2012-08-02 | Massachusetts Institute Of Technology | Device and method for luminescence enhancement by resonant energy transfer from an absorptive thin film |
JP2012158481A (en) * | 2011-01-29 | 2012-08-23 | Soraa Inc | Large-scale facility and method for producing gallium nitride boule by ammonothermal process |
US8802461B2 (en) | 2011-03-22 | 2014-08-12 | Micron Technology, Inc. | Vertical light emitting devices with nickel silicide bonding and methods of manufacturing |
EP2690204B1 (en) | 2011-03-22 | 2023-03-15 | Mitsubishi Chemical Corporation | Process for producing gallium nitride crystal |
US8872217B2 (en) | 2011-04-15 | 2014-10-28 | Luminus Devices, Inc. | Electronic device contact structures |
JPWO2012176318A1 (en) * | 2011-06-23 | 2015-02-23 | 旭化成株式会社 | Manufacturing method of nitride single crystal and autoclave used therefor |
CA2839868A1 (en) * | 2011-06-23 | 2012-12-27 | Asahi Kasei Kabushiki Kaisha | Method for producing nitride single crystal and autoclave for use in the method |
TWI664752B (en) * | 2011-06-28 | 2019-07-01 | 魯米納斯設備公司 | Light-emitting diode architectures for enhanced performance |
US8492185B1 (en) | 2011-07-14 | 2013-07-23 | Soraa, Inc. | Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices |
US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
US9488324B2 (en) | 2011-09-02 | 2016-11-08 | Soraa, Inc. | Accessories for LED lamp systems |
JP5870887B2 (en) * | 2011-09-30 | 2016-03-01 | 三菱化学株式会社 | Annealing method of nitride single crystal |
US9694158B2 (en) | 2011-10-21 | 2017-07-04 | Ahmad Mohamad Slim | Torque for incrementally advancing a catheter during right heart catheterization |
US10029955B1 (en) | 2011-10-24 | 2018-07-24 | Slt Technologies, Inc. | Capsule for high pressure, high temperature processing of materials and methods of use |
WO2013062042A1 (en) | 2011-10-28 | 2013-05-02 | 三菱化学株式会社 | Method for producing nitride crystal, and nitride crystal |
US8912025B2 (en) | 2011-11-23 | 2014-12-16 | Soraa, Inc. | Method for manufacture of bright GaN LEDs using a selective removal process |
EP2823515A4 (en) | 2012-03-06 | 2015-08-19 | Soraa Inc | Light emitting diodes with low refractive index material layers to reduce light guiding effects |
JP6192956B2 (en) * | 2012-03-29 | 2017-09-06 | 国立大学法人東北大学 | Method for producing nitride single crystal |
US9976229B2 (en) * | 2012-03-29 | 2018-05-22 | Mitsubishi Chemical Corporation | Method for producing nitride single crystal |
WO2013147097A1 (en) * | 2012-03-29 | 2013-10-03 | 三菱化学株式会社 | Method for producing nitride single crystal |
US8985794B1 (en) | 2012-04-17 | 2015-03-24 | Soraa, Inc. | Providing remote blue phosphors in an LED lamp |
JP2012136433A (en) * | 2012-04-23 | 2012-07-19 | Ricoh Co Ltd | Group iii nitride crystal, and method for producing the same |
GR1008013B (en) * | 2012-04-25 | 2013-10-22 | Ιδρυμα Τεχνολογιας Και Ερευνας (Ιτε), | Method for heteroepitaxial growth of iii metal-face polarity iii-nitrides on diamond substrates |
US10145026B2 (en) | 2012-06-04 | 2018-12-04 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules |
CN102709420B (en) * | 2012-06-21 | 2014-07-30 | 安徽三安光电有限公司 | GaN-based LED |
US9105579B2 (en) * | 2012-07-18 | 2015-08-11 | Avogy, Inc. | GaN power device with solderable back metal |
US8971368B1 (en) | 2012-08-16 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices having a gallium and nitrogen containing semipolar surface orientation |
US9275912B1 (en) | 2012-08-30 | 2016-03-01 | Soraa, Inc. | Method for quantification of extended defects in gallium-containing nitride crystals |
US9299555B1 (en) | 2012-09-28 | 2016-03-29 | Soraa, Inc. | Ultrapure mineralizers and methods for nitride crystal growth |
US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
US9627840B2 (en) * | 2012-12-03 | 2017-04-18 | Indian Institute Of Technology Kanpur | Metamaterial structures for Q-switching in lasers |
US8802471B1 (en) | 2012-12-21 | 2014-08-12 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
JP6155716B2 (en) * | 2013-03-13 | 2017-07-05 | 株式会社リコー | Group 13 nitride crystal and method for producing group 13 nitride crystal |
US9166372B1 (en) | 2013-06-28 | 2015-10-20 | Soraa Laser Diode, Inc. | Gallium nitride containing laser device configured on a patterned substrate |
US8994033B2 (en) | 2013-07-09 | 2015-03-31 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
US9362715B2 (en) | 2014-02-10 | 2016-06-07 | Soraa Laser Diode, Inc | Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material |
US9368939B2 (en) | 2013-10-18 | 2016-06-14 | Soraa Laser Diode, Inc. | Manufacturable laser diode formed on C-plane gallium and nitrogen material |
US9379525B2 (en) | 2014-02-10 | 2016-06-28 | Soraa Laser Diode, Inc. | Manufacturable laser diode |
US9520695B2 (en) | 2013-10-18 | 2016-12-13 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser device having confinement region |
US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
EP2881982B1 (en) * | 2013-12-05 | 2019-09-04 | IMEC vzw | Method for fabricating cmos compatible contact layers in semiconductor devices |
US9209596B1 (en) | 2014-02-07 | 2015-12-08 | Soraa Laser Diode, Inc. | Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates |
US9871350B2 (en) | 2014-02-10 | 2018-01-16 | Soraa Laser Diode, Inc. | Manufacturable RGB laser diode source |
US9520697B2 (en) | 2014-02-10 | 2016-12-13 | Soraa Laser Diode, Inc. | Manufacturable multi-emitter laser diode |
WO2015127386A1 (en) | 2014-02-21 | 2015-08-27 | Terahertz Device Corporation | Front-side emitting mid-infrared light emitting diode |
TWI613838B (en) * | 2014-03-06 | 2018-02-01 | 晶元光電股份有限公司 | Light-emitting device |
WO2015138635A1 (en) * | 2014-03-11 | 2015-09-17 | Terahertz Device Corporation | Front-side emitting mid-infrared light emitting diode fabrication |
CN110854249A (en) * | 2014-03-14 | 2020-02-28 | 晶元光电股份有限公司 | Light emitting element |
JP6457867B2 (en) * | 2014-03-31 | 2019-01-23 | 日本碍子株式会社 | Method for introducing dopant into group 13 nitride free-standing substrate, group 13 nitride free-standing substrate, method for manufacturing semiconductor device, method for manufacturing LED device, and LED device |
KR101585054B1 (en) * | 2014-05-09 | 2016-01-14 | 한국생산기술연구원 | Liquid Precursor Delivery System |
US9564736B1 (en) | 2014-06-26 | 2017-02-07 | Soraa Laser Diode, Inc. | Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode |
US9246311B1 (en) | 2014-11-06 | 2016-01-26 | Soraa Laser Diode, Inc. | Method of manufacture for an ultraviolet laser diode |
US9666677B1 (en) | 2014-12-23 | 2017-05-30 | Soraa Laser Diode, Inc. | Manufacturable thin film gallium and nitrogen containing devices |
US9653642B1 (en) | 2014-12-23 | 2017-05-16 | Soraa Laser Diode, Inc. | Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes |
CN107223168B (en) * | 2015-02-05 | 2019-11-05 | 美国陶氏有机硅公司 | The furnace of the brilliant distillation of kind for wide bandgap crystal |
US11437774B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | High-luminous flux laser-based white light source |
US11437775B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | Integrated light source using a laser diode |
US10879673B2 (en) | 2015-08-19 | 2020-12-29 | Soraa Laser Diode, Inc. | Integrated white light source using a laser diode and a phosphor in a surface mount device package |
US10938182B2 (en) | 2015-08-19 | 2021-03-02 | Soraa Laser Diode, Inc. | Specialized integrated light source using a laser diode |
US9787963B2 (en) | 2015-10-08 | 2017-10-10 | Soraa Laser Diode, Inc. | Laser lighting having selective resolution |
US9859685B2 (en) | 2015-12-11 | 2018-01-02 | International Business Machines Corporation | Small aperture formation for facilitating optoelectronic device integration with defective semiconductor materials |
US10388691B2 (en) | 2016-05-18 | 2019-08-20 | Globalfoundries Inc. | Light emitting diodes (LEDs) with stacked multi-color pixels for displays |
US9941330B2 (en) * | 2016-05-18 | 2018-04-10 | Globalfoundries Inc. | LEDs with three color RGB pixels for displays |
US9941329B2 (en) | 2016-05-18 | 2018-04-10 | Globalfoundries Inc. | Light emitting diodes (LEDs) with integrated CMOS circuits |
US10037981B2 (en) | 2016-05-18 | 2018-07-31 | Globalfoundries Inc. | Integrated display system with multi-color light emitting diodes (LEDs) |
US10002920B1 (en) * | 2016-12-14 | 2018-06-19 | General Electric Company | System and method for edge termination of super-junction (SJ) devices |
US10648102B2 (en) | 2017-01-09 | 2020-05-12 | Slt Technologies, Inc. | Oxygen-doped group III metal nitride and method of manufacture |
US10174438B2 (en) | 2017-03-30 | 2019-01-08 | Slt Technologies, Inc. | Apparatus for high pressure reaction |
CN107046071A (en) | 2017-04-06 | 2017-08-15 | 中国科学院半导体研究所 | InGaN based resonant cavity enhanced detector chips based on porous DBR |
US10771155B2 (en) | 2017-09-28 | 2020-09-08 | Soraa Laser Diode, Inc. | Intelligent visible light with a gallium and nitrogen containing laser source |
US10222474B1 (en) | 2017-12-13 | 2019-03-05 | Soraa Laser Diode, Inc. | Lidar systems including a gallium and nitrogen containing laser light source |
JP6767411B2 (en) | 2018-03-06 | 2020-10-14 | 株式会社東芝 | Semiconductor devices, power circuits, and computers |
US10551728B1 (en) | 2018-04-10 | 2020-02-04 | Soraa Laser Diode, Inc. | Structured phosphors for dynamic lighting |
US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
US11466384B2 (en) | 2019-01-08 | 2022-10-11 | Slt Technologies, Inc. | Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate |
US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
US11228158B2 (en) | 2019-05-14 | 2022-01-18 | Kyocera Sld Laser, Inc. | Manufacturable laser diodes on a large area gallium and nitrogen containing substrate |
US10903623B2 (en) | 2019-05-14 | 2021-01-26 | Soraa Laser Diode, Inc. | Method and structure for manufacturable large area gallium and nitrogen containing substrate |
CN112746319A (en) * | 2019-10-29 | 2021-05-04 | 中国科学院福建物质结构研究所 | Porous niobium nitride single crystal material and preparation method and application thereof |
CN110952135B (en) * | 2019-12-11 | 2021-01-29 | 上海玺唐半导体科技有限公司 | Polycrystalline gallium nitride growth device |
US11721549B2 (en) | 2020-02-11 | 2023-08-08 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
CN115104174A (en) | 2020-02-11 | 2022-09-23 | Slt科技公司 | Improved III-nitride substrates, methods of making and methods of using |
CN113063760B (en) * | 2021-03-16 | 2022-03-01 | 北京大学长三角光电科学研究院 | Method for detecting dislocation density of heteroepitaxial growth gallium nitride for improving spatial resolution |
CN114336283B (en) * | 2021-12-30 | 2023-05-02 | 北京工业大学 | Optical mode modulation photon cascade laser and preparation method thereof |
CN114336285A (en) * | 2021-12-30 | 2022-04-12 | 北京工业大学 | Rare earth doped photon cascade VCSEL laser |
CN114300940A (en) * | 2021-12-30 | 2022-04-08 | 北京工业大学 | Rare earth doped VCSEL external cavity feedback coherent array laser and preparation method thereof |
CN114775044B (en) * | 2022-05-11 | 2024-01-12 | 华厦半导体(深圳)有限公司 | Gallium nitride substrate growth thermal field device |
CN116403882B (en) * | 2023-06-09 | 2023-08-08 | 雅安宇焜芯材材料科技有限公司 | Semiconductor manufacturing system and method for improving semiconductor manufacturing quality |
Citations (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5578839A (en) | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
US5637531A (en) | 1993-08-10 | 1997-06-10 | High Pressure Research Center, Polish Academy | Method of making a crystalline multilayer structure at two pressures the second one lower than first |
US5770887A (en) | 1993-10-08 | 1998-06-23 | Mitsubishi Cable Industries, Ltd. | GaN single crystal |
US5796771A (en) | 1996-08-19 | 1998-08-18 | The Regents Of The University Of California | Miniature self-pumped monolithically integrated solid state laser |
US5838707A (en) | 1996-12-27 | 1998-11-17 | Motorola, Inc. | Ultraviolet/visible light emitting vertical cavity surface emitting laser and method of fabrication |
US5874747A (en) | 1996-02-05 | 1999-02-23 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
US5877038A (en) | 1996-11-27 | 1999-03-02 | The Regents Of The University Of California | Method of making a vertical cavity laser |
US5962975A (en) | 1996-12-02 | 1999-10-05 | Lepselter; Martin P. | Flat-panel display having magnetic elements |
US5977612A (en) | 1996-12-20 | 1999-11-02 | Xerox Corporation | Semiconductor devices constructed from crystallites |
US6015979A (en) | 1997-08-29 | 2000-01-18 | Kabushiki Kaisha Toshiba | Nitride-based semiconductor element and method for manufacturing the same |
US6031858A (en) | 1996-09-09 | 2000-02-29 | Kabushiki Kaisha Toshiba | Semiconductor laser and method of fabricating same |
US6100586A (en) | 1997-05-23 | 2000-08-08 | Agilent Technologies, Inc. | Low voltage-drop electrical contact for gallium (aluminum, indium) nitride |
US6140669A (en) | 1999-02-20 | 2000-10-31 | Ohio University | Gallium nitride doped with rare earth ions and method and structure for achieving visible light emission |
US6160833A (en) | 1998-05-06 | 2000-12-12 | Xerox Corporation | Blue vertical cavity surface emitting laser |
WO2001024285A1 (en) | 1999-09-27 | 2001-04-05 | Lumileds Lighting, U.S., Llc | A light emitting diode device comprising a luminescent substrate that performs phosphor conversion |
WO2001037351A1 (en) | 1999-11-19 | 2001-05-25 | Cree Lighting Company | Multi color solid state led/laser |
US6255669B1 (en) | 1999-04-23 | 2001-07-03 | The University Of Cincinnati | Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element |
US6273948B1 (en) | 1997-06-05 | 2001-08-14 | Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk | Method of fabrication of highly resistive GaN bulk crystals |
US6280523B1 (en) | 1999-02-05 | 2001-08-28 | Lumileds Lighting, U.S., Llc | Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting |
US6294440B1 (en) | 1998-04-10 | 2001-09-25 | Sharp Kabushiki Kaisha | Semiconductor substrate, light-emitting device, and method for producing the same |
US6320206B1 (en) | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
US6339014B1 (en) | 1998-04-14 | 2002-01-15 | Matsushita Electric Industrial Co., Ltd. | Method for growing nitride compound semiconductor |
US6398867B1 (en) | 1999-10-06 | 2002-06-04 | General Electric Company | Crystalline gallium nitride and method for forming crystalline gallium nitride |
US6413627B1 (en) | 1998-06-18 | 2002-07-02 | Sumitomo Electric Industries, Ltd. | GaN single crystal substrate and method of producing same |
US20020140845A1 (en) | 2001-03-30 | 2002-10-03 | Fuji Photo Film Co., Ltd | Electronic camera |
US20020155634A1 (en) | 2001-04-20 | 2002-10-24 | General Electric Company | Homoepitaxial gallium nitride based photodetector and method of producing |
US20020189531A1 (en) | 2001-06-06 | 2002-12-19 | Dwilinski Robert Tomasz | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
US6504180B1 (en) | 1998-07-28 | 2003-01-07 | Imec Vzw And Vrije Universiteit | Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom |
US6507042B1 (en) | 1998-12-25 | 2003-01-14 | Fujitsu Limited | Semiconductor device and method of manufacturing the same |
US6515308B1 (en) | 2001-12-21 | 2003-02-04 | Xerox Corporation | Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection |
US20030047744A1 (en) | 2001-07-09 | 2003-03-13 | Tomoya Yanamoto | Multilayered reflective membrane and gallium nitride-based light emitting element |
US20030141301A1 (en) | 2002-01-31 | 2003-07-31 | General Electric Crd | High temperature high pressure capsule for processing materials in supercritical fluids |
DE10208170A1 (en) | 2002-02-26 | 2003-09-11 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component used in a laser comprises a radiation-decoupling layer, a series of semiconductor layers containing a photon-emitting active layer, and two reflecting layers forming a resonator |
US20030183155A1 (en) | 2002-03-27 | 2003-10-02 | General Electric Company | High pressure high temperature growth of crystalline group III metal nitrides |
US20040195598A1 (en) * | 2000-10-23 | 2004-10-07 | Tysoe Steven Alfred | Light-based system for detecting analytes |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3788041B2 (en) | 1998-06-30 | 2006-06-21 | 住友電気工業株式会社 | Manufacturing method of GaN single crystal substrate |
US6967981B2 (en) * | 2002-05-30 | 2005-11-22 | Xerox Corporation | Nitride based semiconductor structures with highly reflective mirrors |
-
2003
- 2003-10-24 US US10/693,803 patent/US7009215B2/en not_active Expired - Lifetime
-
2004
- 2004-10-22 JP JP2006536820A patent/JP2007509507A/en not_active Withdrawn
- 2004-10-22 CN CNB2004800151167A patent/CN100472821C/en active Active
- 2004-10-22 KR KR1020057020687A patent/KR101293307B1/en active IP Right Grant
- 2004-10-22 WO PCT/US2004/035028 patent/WO2005043638A1/en active Application Filing
- 2004-10-22 EP EP04796085A patent/EP1680817B1/en active Active
-
2005
- 2005-12-06 US US11/295,627 patent/US7582498B2/en not_active Expired - Fee Related
Patent Citations (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5578839A (en) | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
US5637531A (en) | 1993-08-10 | 1997-06-10 | High Pressure Research Center, Polish Academy | Method of making a crystalline multilayer structure at two pressures the second one lower than first |
US5770887A (en) | 1993-10-08 | 1998-06-23 | Mitsubishi Cable Industries, Ltd. | GaN single crystal |
US5810925A (en) | 1993-10-08 | 1998-09-22 | Mitsubishi Cable Industries, Ltd. | GaN single crystal |
US5874747A (en) | 1996-02-05 | 1999-02-23 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
US5796771A (en) | 1996-08-19 | 1998-08-18 | The Regents Of The University Of California | Miniature self-pumped monolithically integrated solid state laser |
US6031858A (en) | 1996-09-09 | 2000-02-29 | Kabushiki Kaisha Toshiba | Semiconductor laser and method of fabricating same |
US5877038A (en) | 1996-11-27 | 1999-03-02 | The Regents Of The University Of California | Method of making a vertical cavity laser |
US5962975A (en) | 1996-12-02 | 1999-10-05 | Lepselter; Martin P. | Flat-panel display having magnetic elements |
US5977612A (en) | 1996-12-20 | 1999-11-02 | Xerox Corporation | Semiconductor devices constructed from crystallites |
US5838707A (en) | 1996-12-27 | 1998-11-17 | Motorola, Inc. | Ultraviolet/visible light emitting vertical cavity surface emitting laser and method of fabrication |
US6100586A (en) | 1997-05-23 | 2000-08-08 | Agilent Technologies, Inc. | Low voltage-drop electrical contact for gallium (aluminum, indium) nitride |
US6273948B1 (en) | 1997-06-05 | 2001-08-14 | Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk | Method of fabrication of highly resistive GaN bulk crystals |
US6015979A (en) | 1997-08-29 | 2000-01-18 | Kabushiki Kaisha Toshiba | Nitride-based semiconductor element and method for manufacturing the same |
US6294440B1 (en) | 1998-04-10 | 2001-09-25 | Sharp Kabushiki Kaisha | Semiconductor substrate, light-emitting device, and method for producing the same |
US6339014B1 (en) | 1998-04-14 | 2002-01-15 | Matsushita Electric Industrial Co., Ltd. | Method for growing nitride compound semiconductor |
US6160833A (en) | 1998-05-06 | 2000-12-12 | Xerox Corporation | Blue vertical cavity surface emitting laser |
US6413627B1 (en) | 1998-06-18 | 2002-07-02 | Sumitomo Electric Industries, Ltd. | GaN single crystal substrate and method of producing same |
US6504180B1 (en) | 1998-07-28 | 2003-01-07 | Imec Vzw And Vrije Universiteit | Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom |
US6507042B1 (en) | 1998-12-25 | 2003-01-14 | Fujitsu Limited | Semiconductor device and method of manufacturing the same |
US6320206B1 (en) | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
US6280523B1 (en) | 1999-02-05 | 2001-08-28 | Lumileds Lighting, U.S., Llc | Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting |
US6140669A (en) | 1999-02-20 | 2000-10-31 | Ohio University | Gallium nitride doped with rare earth ions and method and structure for achieving visible light emission |
US6255669B1 (en) | 1999-04-23 | 2001-07-03 | The University Of Cincinnati | Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element |
WO2001024285A1 (en) | 1999-09-27 | 2001-04-05 | Lumileds Lighting, U.S., Llc | A light emitting diode device comprising a luminescent substrate that performs phosphor conversion |
US6398867B1 (en) | 1999-10-06 | 2002-06-04 | General Electric Company | Crystalline gallium nitride and method for forming crystalline gallium nitride |
WO2001037351A1 (en) | 1999-11-19 | 2001-05-25 | Cree Lighting Company | Multi color solid state led/laser |
US20040195598A1 (en) * | 2000-10-23 | 2004-10-07 | Tysoe Steven Alfred | Light-based system for detecting analytes |
US20020140845A1 (en) | 2001-03-30 | 2002-10-03 | Fuji Photo Film Co., Ltd | Electronic camera |
US20020155634A1 (en) | 2001-04-20 | 2002-10-24 | General Electric Company | Homoepitaxial gallium nitride based photodetector and method of producing |
US20020189531A1 (en) | 2001-06-06 | 2002-12-19 | Dwilinski Robert Tomasz | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
US20030047744A1 (en) | 2001-07-09 | 2003-03-13 | Tomoya Yanamoto | Multilayered reflective membrane and gallium nitride-based light emitting element |
US6515308B1 (en) | 2001-12-21 | 2003-02-04 | Xerox Corporation | Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection |
US20030141301A1 (en) | 2002-01-31 | 2003-07-31 | General Electric Crd | High temperature high pressure capsule for processing materials in supercritical fluids |
DE10208170A1 (en) | 2002-02-26 | 2003-09-11 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component used in a laser comprises a radiation-decoupling layer, a series of semiconductor layers containing a photon-emitting active layer, and two reflecting layers forming a resonator |
US20030183155A1 (en) | 2002-03-27 | 2003-10-02 | General Electric Company | High pressure high temperature growth of crystalline group III metal nitrides |
Non-Patent Citations (17)
Title |
---|
C. Van De Walle, Phys. Rev. B 56, R10020 (1997). |
D'Evelyn et al., Gallium Nitride Crystal and Method of Making Same; U.S. Appl. No. 10/329,981. |
D'Evelyn et al., Homoepitaxial Gallium-Nitride-Based Light Emitting Device and Method for Producing, U.S. Appl. No. 09/694,690; filed Oct. 23, 2000. |
Fini et al. In situ, Real-Time Measurement of Wing Tilt During Lateral Epitaxial Overgrowth of GaN; Applied Physics Letters, vol. 76, No. 26, Jun. 26, 2000. |
Horibuchi et al., Behavior of Threading Dislocations in SAG-GaN Grown by MOVPE, phys. Stat. sol. (a) 180, 171 (2000). |
Kamp et al., GaN Homoepitaxy for Device Applications, Kamp et al., MRS Internet J. Nitride Semicond. Res. 4SI, G10.2 (1999). |
Kim et al. Crystal tilting in GaN Grown by Pendoepitaxy Method on Sapphire Substrate, Applied Physics Letters, vol. 75, No. 26, Dec. 27, 1999. |
Kuan et al., Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy. |
M.G. Weinstein et al., Appl. Phys. Lett. 72, 1703 (1998). |
Marchand et al., Microstructure of GaN Laterally Overgrown by Metalorganic Chemical Vapor Deposition, Applied Physics Letters, vol. 73, No. 6, Aug. 10, 1998. |
Patent Abstract of Japan, Publication No. 2000-022212, Date Jan. 21, 2000. |
Pelzmann et al., Blue Light-Emitting Diodes on GaN Substrates, Growth and Characterization, Journal of Crystal Growth 189/190 (1998) 167-171. |
Porowski, "Near defect-free GaN substrates" [MRS Internet J. Nitride Semicond. Research 4S1, G1.3 (1999)]. |
Porowski, High Pressure of Crystallization of III-V Nitrides, ACTA Physica Polonica A, vol. 87 (1995), No. 2. |
Sakai et al., Transmission Electron Microscopy of Defects in GaN Films Formed by Epitaxial Lateral Overgrowth, Applied Physics Letters, vol. 73, No. 4, Jul. 27, 1998. |
U.S. Appl. No. 10/329,981, filed Dec. 27, 2002, D'Evelyn. |
U.S. Appl. No. 60/435,189, filed Dec. 18, 2002, D'Evelyn. |
Cited By (96)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070120129A1 (en) * | 1999-11-19 | 2007-05-31 | Cree, Inc. | Rare earth doped layer or substrate for light conversion |
US8829546B2 (en) * | 1999-11-19 | 2014-09-09 | Cree, Inc. | Rare earth doped layer or substrate for light conversion |
US7615780B2 (en) | 2000-10-23 | 2009-11-10 | General Electric Company | DNA biosensor and methods for making and using the same |
US20080230716A1 (en) * | 2000-10-23 | 2008-09-25 | General Electric Company | Dna biosensor and methods for making and using the same |
US10975492B2 (en) | 2002-12-27 | 2021-04-13 | Slt Technologies, Inc. | Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution |
US10208396B2 (en) * | 2002-12-27 | 2019-02-19 | Soraa, Inc. | Crystalline gallium nitride containing flourine |
US20060275937A1 (en) * | 2003-11-26 | 2006-12-07 | Sanken Electric Co., Ltd. | Method of fabricating light-emitting semiconductor device |
US20050110029A1 (en) * | 2003-11-26 | 2005-05-26 | Hidekazu Aoyagi | Light-emitting semiconductor device and method of fabrication |
US7456435B2 (en) * | 2003-11-26 | 2008-11-25 | Sanken Electric Co., Ltd. | Light-emitting semiconductor device |
US9231376B2 (en) | 2004-05-10 | 2016-01-05 | The Regents Of The University Of California | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices |
US9793435B2 (en) | 2004-05-10 | 2017-10-17 | The Regents Of The University Of California | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices |
US7425503B1 (en) * | 2004-05-25 | 2008-09-16 | National Semiconductor Corporation | Apparatus and method for enhanced thermal conductivity packages for high powered semiconductor devices |
US8754449B2 (en) * | 2004-06-11 | 2014-06-17 | Ammono Sp. Z O.O. | High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof |
US20080067523A1 (en) * | 2004-06-11 | 2008-03-20 | Robert Dwilinski | High Electron Mobility Transistor (Hemt) Made of Layers of Group XIII Element Nitrides and Manufacturing Method Thereof |
US7936798B2 (en) * | 2004-08-15 | 2011-05-03 | Instytut Wysokich Cisnien Polskiej Akademii Nauk | Nitride based laser diode and method of manufacturing nitride based laser diode |
US20080107144A1 (en) * | 2004-08-15 | 2008-05-08 | Skierbiszewski Czeslaw | Nitride Based Laser Diode and Method of Manufacturing Nitride Based Laser Diode |
US20060148186A1 (en) * | 2005-01-03 | 2006-07-06 | Samsung Electro-Mechanics Co., Ltd. | Method and apparatus for manufacturing gallium nitride based single crystal substrate |
US8128756B2 (en) | 2005-03-10 | 2012-03-06 | The Regents Of The University Of California | Technique for the growth of planar semi-polar gallium nitride |
US20100133663A1 (en) * | 2005-03-10 | 2010-06-03 | The Regents Of The University Of California | Technique for the growth of planar semi-polar gallium nitride |
US7704331B2 (en) * | 2005-03-10 | 2010-04-27 | The Regents Of The University Of California | Technique for the growth of planar semi-polar gallium nitride |
US20070111531A1 (en) * | 2005-03-10 | 2007-05-17 | The Regents Of The University Of California | Technique for the growth of planar semi-polar gallium nitride |
US8524012B2 (en) | 2005-03-10 | 2013-09-03 | The Regents Of The University Of California | Technique for the growth of planar semi-polar gallium nitride |
US7346089B2 (en) * | 2005-04-08 | 2008-03-18 | Fuji Xerox Co., Ltd. | Surface-emitting laser diode with tunnel junction and fabrication method thereof |
US20060227835A1 (en) * | 2005-04-08 | 2006-10-12 | Fuji Xerox Co., Ltd. | Surface-emitting laser diode with tunnel junction and fabrication method thereof |
US20060228819A1 (en) * | 2005-04-11 | 2006-10-12 | Hitachi Cable, Ltd. | Method of making nitride-based compound semiconductor crystal and substrate |
US7348278B2 (en) * | 2005-04-11 | 2008-03-25 | Hitachi Cable, Ltd. | Method of making nitride-based compound semiconductor crystal and substrate |
US10529892B2 (en) | 2005-06-01 | 2020-01-07 | The Regents Of The University Of California | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices |
US7397069B2 (en) * | 2005-08-29 | 2008-07-08 | Kabushiki Kaisha Toshiba | Semiconductor device |
US20100102296A1 (en) * | 2005-08-29 | 2010-04-29 | Kabushiki Kaisha Toshiba | Semiconductor device |
US8466477B2 (en) | 2005-08-29 | 2013-06-18 | Kabushiki Kaisha Toshiba | Semiconductor device |
US9035336B2 (en) | 2005-08-29 | 2015-05-19 | Kabushiki Kaisha Toshiba | Semiconductor device |
US20070096142A1 (en) * | 2005-08-29 | 2007-05-03 | Kabushiki Kaisha Toshiba | Semiconductor device |
US8835950B2 (en) | 2005-08-29 | 2014-09-16 | Kabushiki Kaisha Toshiba | Semiconductor device |
US20080151957A1 (en) * | 2005-08-29 | 2008-06-26 | Kabushiki Kaisha Toshiba | Semiconductor device |
US7683390B2 (en) * | 2005-08-29 | 2010-03-23 | Kabushiki Kaisha Toshiba | Semiconductor device |
US8741686B2 (en) | 2005-08-29 | 2014-06-03 | Kabushiki Kaisha Toshiba | Semiconductor device |
US7494546B1 (en) * | 2006-07-14 | 2009-02-24 | Blue Wave Semicodnuctors, Inc. | Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devices |
US20100224890A1 (en) * | 2006-09-18 | 2010-09-09 | Cree, Inc. | Light emitting diode chip with electrical insulation element |
US20080191233A1 (en) * | 2007-02-13 | 2008-08-14 | Epistar Corporation | Light-emitting diode and method for manufacturing the same |
US20080197369A1 (en) * | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double flip semiconductor device and method for fabrication |
US20100295073A1 (en) * | 2007-06-26 | 2010-11-25 | Osram Opto Semiconductors Gmbh | Optoelectronic Semiconductor Chip |
US8299484B2 (en) * | 2007-06-26 | 2012-10-30 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
US20090050911A1 (en) * | 2007-08-24 | 2009-02-26 | Cree, Inc. | Light emitting device packages using light scattering particles of different size |
US11114594B2 (en) | 2007-08-24 | 2021-09-07 | Creeled, Inc. | Light emitting device packages using light scattering particles of different size |
US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
US20090152573A1 (en) * | 2007-12-14 | 2009-06-18 | Cree, Inc. | Textured encapsulant surface in LED packages |
US8871024B2 (en) | 2008-06-05 | 2014-10-28 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US9157167B1 (en) | 2008-06-05 | 2015-10-13 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8097081B2 (en) | 2008-06-05 | 2012-01-17 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US20090301387A1 (en) * | 2008-06-05 | 2009-12-10 | Soraa Inc. | High pressure apparatus and method for nitride crystal growth |
US8986447B2 (en) | 2008-06-05 | 2015-03-24 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US20090301388A1 (en) * | 2008-06-05 | 2009-12-10 | Soraa Inc. | Capsule for high pressure processing and method of use for supercritical fluids |
US20090320744A1 (en) * | 2008-06-18 | 2009-12-31 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8303710B2 (en) | 2008-06-18 | 2012-11-06 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US20100001300A1 (en) * | 2008-06-25 | 2010-01-07 | Soraa, Inc. | COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs |
US20090320745A1 (en) * | 2008-06-25 | 2009-12-31 | Soraa, Inc. | Heater device and method for high pressure processing of crystalline materials |
US20100003492A1 (en) * | 2008-07-07 | 2010-01-07 | Soraa, Inc. | High quality large area bulk non-polar or semipolar gallium based substrates and methods |
USRE47711E1 (en) | 2008-08-04 | 2019-11-05 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
US8558265B2 (en) | 2008-08-04 | 2013-10-15 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
US20100025656A1 (en) * | 2008-08-04 | 2010-02-04 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
US8124996B2 (en) | 2008-08-04 | 2012-02-28 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
US8956894B2 (en) | 2008-08-04 | 2015-02-17 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
US8444765B2 (en) | 2008-08-07 | 2013-05-21 | Soraa, Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
US20100031876A1 (en) * | 2008-08-07 | 2010-02-11 | Soraa,Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
US8021481B2 (en) | 2008-08-07 | 2011-09-20 | Soraa, Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
US8323405B2 (en) | 2008-08-07 | 2012-12-04 | Soraa, Inc. | Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer |
US10036099B2 (en) | 2008-08-07 | 2018-07-31 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US8430958B2 (en) | 2008-08-07 | 2013-04-30 | Soraa, Inc. | Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride |
US8979999B2 (en) | 2008-08-07 | 2015-03-17 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US20100031874A1 (en) * | 2008-08-07 | 2010-02-11 | Soraa, Inc. | Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer |
US20100031875A1 (en) * | 2008-08-07 | 2010-02-11 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US20100031872A1 (en) * | 2008-08-07 | 2010-02-11 | Soraa, Inc. | Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride |
US8148801B2 (en) | 2008-08-25 | 2012-04-03 | Soraa, Inc. | Nitride crystal with removable surface layer and methods of manufacture |
US20100295088A1 (en) * | 2008-10-02 | 2010-11-25 | Soraa, Inc. | Textured-surface light emitting diode and method of manufacture |
US8354679B1 (en) | 2008-10-02 | 2013-01-15 | Soraa, Inc. | Microcavity light emitting diode method of manufacture |
US8455894B1 (en) | 2008-10-17 | 2013-06-04 | Soraa, Inc. | Photonic-crystal light emitting diode and method of manufacture |
US8461071B2 (en) | 2008-12-12 | 2013-06-11 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
USRE47114E1 (en) | 2008-12-12 | 2018-11-06 | Slt Technologies, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US8987156B2 (en) | 2008-12-12 | 2015-03-24 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US20100151194A1 (en) * | 2008-12-12 | 2010-06-17 | Soraa, Inc. | Polycrystalline group iii metal nitride with getter and method of making |
US9543392B1 (en) | 2008-12-12 | 2017-01-10 | Soraa, Inc. | Transparent group III metal nitride and method of manufacture |
US20110100291A1 (en) * | 2009-01-29 | 2011-05-05 | Soraa, Inc. | Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules |
US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
US8306081B1 (en) | 2009-05-27 | 2012-11-06 | Soraa, Inc. | High indium containing InGaN substrates for long wavelength optical devices |
US8435347B2 (en) | 2009-09-29 | 2013-05-07 | Soraa, Inc. | High pressure apparatus with stackable rings |
US9175418B2 (en) | 2009-10-09 | 2015-11-03 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
US8878230B2 (en) | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
US20110220912A1 (en) * | 2010-03-11 | 2011-09-15 | Soraa, Inc. | Semi-insulating Group III Metal Nitride and Method of Manufacture |
US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
US8931906B2 (en) | 2010-08-27 | 2015-01-13 | Industrial Technology Research Institute | Light emitting unit array and projection system |
US8729559B2 (en) | 2010-10-13 | 2014-05-20 | Soraa, Inc. | Method of making bulk InGaN substrates and devices thereon |
US8946865B2 (en) | 2011-01-24 | 2015-02-03 | Soraa, Inc. | Gallium—nitride-on-handle substrate materials and devices and method of manufacture |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US8482104B2 (en) | 2012-01-09 | 2013-07-09 | Soraa, Inc. | Method for growth of indium-containing nitride films |
US10361339B2 (en) * | 2014-11-12 | 2019-07-23 | Seoul Viosys Co., Ltd. | Light emitting device and manufacturing method therefor |
Also Published As
Publication number | Publication date |
---|---|
US20060118799A1 (en) | 2006-06-08 |
JP2007509507A (en) | 2007-04-12 |
CN100472821C (en) | 2009-03-25 |
KR101293307B1 (en) | 2013-08-05 |
CN1799150A (en) | 2006-07-05 |
EP1680817A1 (en) | 2006-07-19 |
KR20060097558A (en) | 2006-09-14 |
EP1680817B1 (en) | 2012-08-01 |
WO2005043638A1 (en) | 2005-05-12 |
US7582498B2 (en) | 2009-09-01 |
US20050087753A1 (en) | 2005-04-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7009215B2 (en) | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates | |
US7053413B2 (en) | Homoepitaxial gallium-nitride-based light emitting device and method for producing | |
EP1579486B1 (en) | Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same | |
US7132730B2 (en) | Bulk nitride mono-crystal including substrate for epitaxy | |
Denbaars | Gallium-nitride-based materials for blue to ultraviolet optoelectronics devices | |
CN100550543C (en) | Nitride semiconductor laser device and manufacture method thereof | |
US20080108162A1 (en) | Light-Emitting Device Structure Using Nitride Bulk Single Crystal Layer | |
AU2002347692A1 (en) | Bulk monocrystalline gallium nitride | |
US11939700B2 (en) | Impurity control during formation of aluminum nitride crystals and thermal treatment of aluminum nitride crystals | |
US9099843B1 (en) | High operating temperature laser diodes | |
Krukowski et al. | Blue and UV semiconductor lasers | |
Denbaars | Gallium nitride based semiconductors for short wavelength optoelectronics |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: GENERAL ELECTRIC COMPANY, NEW YORK Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:D'EVELYN, MARK PHILIP;CAO, XIAN-AN;ZHANG, ANPING;AND OTHERS;REEL/FRAME:014640/0957;SIGNING DATES FROM 20031023 TO 20031024 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
AS | Assignment |
Owner name: JPMORGAN CHASE BANK, N.A. AS ADMINISTRATIVE AGENT, Free format text: SECURITY AGREEMENT;ASSIGNORS:MOMENTIVE PERFORMANCE MATERIALS HOLDINGS INC.;MOMENTIVE PERFORMANCE MATERIALS GMBH & CO. KG;MOMENTIVE PERFORMANCE MATERIALS JAPAN HOLDINGS GK;REEL/FRAME:019511/0166 Effective date: 20070228 |
|
AS | Assignment |
Owner name: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., A Free format text: SECURITY AGREEMENT;ASSIGNORS:MOMENTIVE PERFORMANCE MATERIALS, INC.;JUNIPER BOND HOLDINGS I LLC;JUNIPER BOND HOLDINGS II LLC;AND OTHERS;REEL/FRAME:022902/0461 Effective date: 20090615 |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
AS | Assignment |
Owner name: BANK OF NEW YORK MELLON TRUST COMPANY, N.A., THE, PENNSYLVANIA Free format text: SECURITY AGREEMENT;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC;REEL/FRAME:028344/0208 Effective date: 20120525 Owner name: BANK OF NEW YORK MELLON TRUST COMPANY, N.A., THE, Free format text: SECURITY AGREEMENT;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC;REEL/FRAME:028344/0208 Effective date: 20120525 |
|
AS | Assignment |
Owner name: BANK OF NEW YORK MELLON TRUST COMPANY, N.A., THE, PENNSYLVANIA Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:030185/0001 Effective date: 20121116 Owner name: BANK OF NEW YORK MELLON TRUST COMPANY, N.A., THE, Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:030185/0001 Effective date: 20121116 |
|
AS | Assignment |
Owner name: JPMORGAN CHASE BANK, N.A., NEW YORK Free format text: SECURITY AGREEMENT;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:030311/0343 Effective date: 20130424 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
AS | Assignment |
Owner name: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL AGENT, PENNSYLVANIA Free format text: SECURITY INTEREST;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:034066/0662 Effective date: 20141024 Owner name: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL AGENT, PENNSYLVANIA Free format text: SECURITY INTEREST;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:034066/0570 Effective date: 20141024 Owner name: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., A Free format text: SECURITY INTEREST;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:034066/0570 Effective date: 20141024 Owner name: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., A Free format text: SECURITY INTEREST;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:034066/0662 Effective date: 20141024 |
|
AS | Assignment |
Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS;ASSIGNOR:THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A.;REEL/FRAME:034113/0252 Effective date: 20141024 Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS;ASSIGNOR:THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A.;REEL/FRAME:034113/0331 Effective date: 20141024 |
|
AS | Assignment |
Owner name: BOKF, NA, AS SUCCESSOR COLLATERAL AGENT, OKLAHOMA Free format text: NOTICE OF CHANGE OF COLLATERAL AGENT - ASSIGNMENT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY;ASSIGNOR:THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A. AS COLLATERAL AGENT;REEL/FRAME:035136/0457 Effective date: 20150302 Owner name: BOKF, NA, AS SUCCESSOR COLLATERAL AGENT, OKLAHOMA Free format text: NOTICE OF CHANGE OF COLLATERAL AGENT - ASSIGNMENT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY - SECOND LIEN;ASSIGNOR:THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A. AS COLLATERAL AGENT;REEL/FRAME:035137/0263 Effective date: 20150302 |
|
AS | Assignment |
Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BOKF, NA;REEL/FRAME:039263/0831 Effective date: 20160711 Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:039263/0177 Effective date: 20160711 Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:039263/0091 Effective date: 20160711 Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BOKF, NA;REEL/FRAME:039263/0803 Effective date: 20160711 |
|
AS | Assignment |
Owner name: SORAA INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS, INC.;REEL/FRAME:040186/0212 Effective date: 20160711 |
|
FEPP | Fee payment procedure |
Free format text: PAT HOLDER CLAIMS SMALL ENTITY STATUS, ENTITY STATUS SET TO SMALL (ORIGINAL EVENT CODE: LTOS); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
AS | Assignment |
Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:GENERAL ELECTRIC COMPANY;REEL/FRAME:041201/0911 Effective date: 20160524 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YR, SMALL ENTITY (ORIGINAL EVENT CODE: M2553) Year of fee payment: 12 |
|
AS | Assignment |
Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BOKF, NA, AS SUCCESSOR COLLATERAL AGENT;REEL/FRAME:045261/0126 Effective date: 20140911 |
|
AS | Assignment |
Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BOKF, NA;REEL/FRAME:049194/0085 Effective date: 20190515 Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BOKF, NA;REEL/FRAME:049249/0271 Effective date: 20190515 |
|
AS | Assignment |
Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:050304/0555 Effective date: 20190515 |
|
AS | Assignment |
Owner name: SLT TECHNOLOGIES, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SORAA, INC.;REEL/FRAME:051210/0211 Effective date: 20191024 |
|
AS | Assignment |
Owner name: SORAA, INC., CALIFORNIA Free format text: RELEASE BY SECURED PARTY;ASSIGNORS:SPECIAL VALUE CONTINUATION PARTNERS, LP;TENNENBAUM OPPORTUNITIES PARTNERS V, LP;TCPC SBIC, LP;AND OTHERS;REEL/FRAME:051974/0413 Effective date: 20200219 |
|
AS | Assignment |
Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:054387/0001 Effective date: 20201102 Owner name: MOMENTIVE PERFORMANCE MATERIALS GMBH & CO KG, GERMANY Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:054387/0001 Effective date: 20201102 Owner name: MOMENTIVE PERFORMANCE MATERIALS JAPAN HOLDINGS GK, JAPAN Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:054387/0001 Effective date: 20201102 |
|
AS | Assignment |
Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL AGENT;REEL/FRAME:054883/0855 Effective date: 20201222 |