US6720221B1 - Structure and method for dual gate oxide thicknesses - Google Patents
Structure and method for dual gate oxide thicknesses Download PDFInfo
- Publication number
- US6720221B1 US6720221B1 US09/943,398 US94339801A US6720221B1 US 6720221 B1 US6720221 B1 US 6720221B1 US 94339801 A US94339801 A US 94339801A US 6720221 B1 US6720221 B1 US 6720221B1
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- gate oxides
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- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 24
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 229910052743 krypton Inorganic materials 0.000 claims description 11
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 11
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
Abstract
Description
Claims (33)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/943,398 US6720221B1 (en) | 2000-02-28 | 2001-08-30 | Structure and method for dual gate oxide thicknesses |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/514,629 US6297103B1 (en) | 2000-02-28 | 2000-02-28 | Structure and method for dual gate oxide thicknesses |
US09/943,398 US6720221B1 (en) | 2000-02-28 | 2001-08-30 | Structure and method for dual gate oxide thicknesses |
Related Parent Applications (1)
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US09/514,629 Division US6297103B1 (en) | 2000-02-28 | 2000-02-28 | Structure and method for dual gate oxide thicknesses |
Publications (1)
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US6720221B1 true US6720221B1 (en) | 2004-04-13 |
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US09/514,629 Expired - Fee Related US6297103B1 (en) | 2000-02-28 | 2000-02-28 | Structure and method for dual gate oxide thicknesses |
US09/943,393 Expired - Lifetime US6833308B2 (en) | 2000-02-28 | 2001-08-30 | Structure and method for dual gate oxide thicknesses |
US09/943,324 Expired - Lifetime US6794709B2 (en) | 2000-02-28 | 2001-08-30 | Structure and method for dual gate oxide thicknesses |
US09/943,398 Expired - Lifetime US6720221B1 (en) | 2000-02-28 | 2001-08-30 | Structure and method for dual gate oxide thicknesses |
Family Applications Before (3)
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US09/514,629 Expired - Fee Related US6297103B1 (en) | 2000-02-28 | 2000-02-28 | Structure and method for dual gate oxide thicknesses |
US09/943,393 Expired - Lifetime US6833308B2 (en) | 2000-02-28 | 2001-08-30 | Structure and method for dual gate oxide thicknesses |
US09/943,324 Expired - Lifetime US6794709B2 (en) | 2000-02-28 | 2001-08-30 | Structure and method for dual gate oxide thicknesses |
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US6833308B2 (en) | 2004-12-21 |
US20020004276A1 (en) | 2002-01-10 |
US6794709B2 (en) | 2004-09-21 |
US6297103B1 (en) | 2001-10-02 |
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