US6358631B1 - Mixed vapor deposited films for electroluminescent devices - Google Patents
Mixed vapor deposited films for electroluminescent devices Download PDFInfo
- Publication number
- US6358631B1 US6358631B1 US08/693,359 US69335996A US6358631B1 US 6358631 B1 US6358631 B1 US 6358631B1 US 69335996 A US69335996 A US 69335996A US 6358631 B1 US6358631 B1 US 6358631B1
- Authority
- US
- United States
- Prior art keywords
- group
- led
- layer
- substituted
- electrically conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 0 *.**1OCCN1C Chemical compound *.**1OCCN1C 0.000 description 18
- YZZHLQUXFAOLAA-UHFFFAOYSA-N CC1=C(C)N=C2C(O)=NC=NC2=N1 Chemical compound CC1=C(C)N=C2C(O)=NC=NC2=N1 YZZHLQUXFAOLAA-UHFFFAOYSA-N 0.000 description 1
- UWWUXWWWOUNMKW-UHFFFAOYSA-N OC1=NC=NC2=NC=CN=C12 Chemical compound OC1=NC=NC2=NC=CN=C12 UWWUXWWWOUNMKW-UHFFFAOYSA-N 0.000 description 1
- YMXFOIXAKZFUTI-UHFFFAOYSA-N PN1C2OC(C3)CCCCCNCCCN3C12 Chemical compound PN1C2OC(C3)CCCCCNCCCN3C12 YMXFOIXAKZFUTI-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/322—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising boron
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/611—Charge transfer complexes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/916—Fraud or tamper detecting
Definitions
- This invention relates to multicolor organic light emitting devices and more particularly to such devices for use in flat panel electronic displays.
- the electronic display is an indispensable way in modern society to deliver information and is utilized in television sets, computer terminals and in a host of other applications. No other medium offers its speed, versatility and interactivity.
- Known display technologies include plasma displays, light emitting diodes (LEDs), thin film electroluminescent displays, and so forth.
- the primary non-emissive technology makes use of the electro optic properties of a class of organic molecules known as liquid crystals (LCs) or liquid crystal displays (LCDs).
- LCDs operate fairly reliably but have relatively low contrast and resolution, and require high power backlighting.
- Active matrix displays employ an array of transistors, each capable of activating a single LC pixel.
- Color displays operate with the three primary colors red (R), green (G) and blue (B).
- RGB red
- G green
- B blue
- LEDs red, green and blue light emitting devices
- the most favored high efficiency organic emissive structure is referred to as the double heterostructure LED which is shown in FIG. 1 A and designated as prior art.
- This structure is very similar to conventional, inorganic LED's using materials as GaAs or InP.
- a support layer of glass 10 is coated by a thin layer of Indium Tin Oxide (ITO) 11 , where layers 10 and 11 form the substrate.
- ITO Indium Tin Oxide
- HTL hole transporting layer
- HTL layer 12 Deposited on the surface of HTL layer 12 is a thin (typically, 50 ⁇ -100 ⁇ ) emission layer (EL) 13 . If the layers are too thin there may be lack of continuity in the film, and thicker films tend to have a high internal resistance requiring higher power operation.
- Emissive layer (EL) 13 provides the recombination site for electrons injected from a 100-500 ⁇ thick electron transporting layer 14 (ETL) with holes from the HTL layer 12 .
- the ETL material is characterized by its considerably higher electron than hole mobility. Examples of prior art ETL, EL and HTL materials are disclosed in U.S. Pat. No. 5,294,870 entitled “Organic Electroluminescent MultiColor Image Display Device”, issued on Mar. 15, 1994 to Tang et al.
- the EL layer 13 is doped with a highly fluorescent dye to tune color and increase the electroluminescent efficiency of the LED.
- the device as shown in FIG. 1A is completed by depositing metal contacts 15 , 16 and top electrode 17 .
- Contacts 15 and 16 are typically fabricated from indium or Ti/Pt/Au.
- Electrode 17 is often a dual layer structure consisting of an alloy such as Mg/Ag 17 ′ directly contacting the organic ETL layer 14 , and a thick, high work function metal layer 17 ′′ such as gold (Au) or silver (Ag) on the Mg/Ag.
- the thick metal 17 ′′ is opaque.
- An LED device of FIG. 1A typically has luminescent external quantum efficiencies of from 0.05 percent to 4 percent depending on the color of emission and its structure.
- FIG. 1 B Another known organic emissive structure referred as a single heterostructure is shown in FIG. 1 B and designated as prior art.
- the EL layer 13 serves also as an ETL layer, eliminating the ETL layer 14 of FIG. 1 A.
- the device of FIG. 1B for efficient operation, must incorporate an EL layer 13 having good electron transport capability, otherwise a separate ETL layer 14 must be included as shown for the device of FIG. 1 A.
- FIG. 1C Yet another known LED device is shown in FIG. 1C, illustrating a typical cross sectional view of a single layer (polymer) LED.
- the device includes a glass support layer 1 , coated by a thin ITO layer 3 , for forming the base substrate.
- a thin organic layer 5 of spin-coated polymer, for example, is formed over ITO layer 3 , and provides all of the functions of the HTL, ETL, and EL layers of the previously described devices.
- a metal electrode layer 6 is formed over organic layer 5 .
- the metal is typically Mg, Ca, or other conventionally used metals.
- the present invention is generally directed to a multicolor organic light emitting device and structures containing the same employing an emission layer containing a select group of emitting compounds selected for the transmission of desirable primary colors.
- the emission layer can optionally contain a matrix formed from host compounds which facilitate the transportation of electrons to the emitting compound.
- a multicolor light emitting device (LED) structure comprising:
- each LED stacked one upon the other, to form a layered structure, with each LED separated one from the other by a transparent conductive layer to enable each device to receive a separate bias potential to emit light through the stack, at least one of said LED's comprising an emission layer, said emission layer comprising at least one of
- M is a trivalent metal ion;
- Q is at least one fused ring, at least one of said fused rings containing at least one nitrogen atom; and L is a ligand selected from the group consisting of picolylmethylketone; substituted and unsubstituted salicylaldehyde; a group of the formula R 1 (O)CO— wherein R 1 is selected from the group consisting of hydrogen, an alkyl group, an aryl group, and a heterocyclic group, each of which may be substituted with at least one substituent selected from the group consisting of aryl, halogen, cyano and alkoxy; halogen; a group of the formula R 1 O— wherein R 1 is as defined above; bistriphenyl siloxides; and quinolates and derivatives thereof; p is 1 or 2 and t is 1 or 2 where p does not equal t; and
- the multicolor light emitting device comprises:
- each LED stacked one upon the other, to form a layered structure, with each LED separated one from the other by a transparent conductive layer to enable each device to receive a separate bias potential to operate to emit light through the stack, at least one of said LED's comprising an emission layer containing
- a trivalent metal quinolate complex selected from the group consisting of a compound of the following formulas:
- R is selected from the group consisting of hydrogen, an alkyl group, an aryl group, and a heterocyclic group, each of which may be substituted with at least one substituent selected from the group consisting of aryl, halogen, cyano and alkoxy;
- M is a trivalent metal ion;
- L is a ligand selected from the group consisting of picolylmethylketone; substituted and unsubstituted salicylaldehyde; a group of the formula R 1 (O)CO— wherein R 1 is selected from the group consisting of hydrogen, an alkyl group, an aryl group, and a heterocyclic group, each of which may be substituted with at least one substituent selected from the group consisting of aryl, halogen, cyano and alkoxy; halogen; a group of the formula R 1 O— wherein R 1 is as defined above; bistriphenyl siloxides; and quinolates and derivatives thereof;
- A is an ary
- R, M, A, n 1 , n 2 , m 1 and m 2 are as defined above.
- the multicolor light emitting device (LED) structure comprises:
- each LED stacked one upon the other, to form a layered structure, with each LED separated one from the other by a transparent conductive layer to enable each device to receive a separate bias potential to emit light through the stack, at least one of said LED's comprising an emission layer, said LED's comprising an emission layer, said emission layer comprising at least one of
- R is selected from the group consisting of hydrogen, an alkyl group, an aryl group, and a heterocyclic group, each of which may be substituted with at least one substituent selected from the group consisting of aryl, halogen, cyano and alkoxy;
- M is a trivalent metal ion;
- L is a ligand selected from the group consisting of picolylmethylketone; substituted and unsubstituted salicylaldehyde; a group of the formula R 1 (O)CO— wherein R 1 is selected from the group consisting of hydrogen, an alkyl group, an aryl group, and a heterocyclic group, each of which may be substituted with at least one substituent selected from the group consisting of aryl, halogen, cyano and alkoxy; halogen; a group of the formula R 1 O— wherein R 1 is as defined above; bistriphenyl siloxides and quinolates and derivatives thereof; and
- R and M are as defined above, with the proviso that each R can not be hydrogen at the same time.
- the multicolor organic light emitting devices of the present invention may optionally contain host compounds which facilitate the carrying of electrons to the emitting compounds to initiate light emission.
- the preferred host compounds are set forth below:
- M for compounds represented by formulas (a) and (b) is a +3 metal while M 1 for compounds represented by formulas (c) and (d) is a +2 metal; and R 1 through R 5 are each independently selected from the group consisting of hydrogen, alkyl and aryl.
- FIG. 1A is a cross sectional view of a typical organic double heterostructure light emitting device (LED) according to the prior art.
- FIG. 1B is a cross sectional view of a typical organic single heterostructure light emitting device (LED) according to the prior art.
- FIG. 1C is a cross sectional view of a known single layer polymer LED structure according to the prior art.
- FIGS. 2A, 2 B, and 2 C are cross sectional views of an integrated three color pixel utilizing crystalline organic light emitting devices (LED's), respectively, according to embodiments of this invention, respectively.
- LED's crystalline organic light emitting devices
- FIGS. 3A-11J are structural formulas of emitting compounds which can be used in the active emission layers to generate the various colors.
- FIGS. 12 (A-E) illustrate a shadow masking process for the fabrication of the multicolor LED according to the invention.
- FIGS. 13 (A-F) illustrate a dry etching process for the fabrication of the multicolor LED according to the invention.
- FIG. 14A shows a multicolor LED of one embodiment of this invention configured for facilitating packaging thereof.
- FIG. 14B shows a cross sectional view of a hermetic package for another embodiment of the invention.
- FIG. 14C is cross sectional view taken along line 14 C- 14 C of FIG. 14 B.
- FIG. 15 is a block diagram showing an RGB display utilizing LED devices according to this invention together with display drive circuitry.
- FIG. 16 shows an LED device of another embodiment of the invention extending the number of stacked LED's to N, where N is an integer number 1, 2, 3 . . . N.
- FIGS. 17A-17D are structural formulas of host compounds which can be used in the active emission layers as a matrix for the emitting compounds.
- FIG. 1A has been described and is a prior art double heterostructure organic light emitting device.
- the basic construction of the device of FIG. 1A is used in this invention as will be described.
- FIG. 2A there is shown a schematic cross section of a highly compact, integrated RGB pixel structure which is implemented by grown or vacuum deposited organic layers, in one embodiment of the invention.
- a stack of LED double heterostructures (DH) designated as 20 , 21 and 22 , in one embodiment of the invention.
- LED 20 is considered in a bottom portion of the stack, LED 21 in a middle portion of the stack, and LED 22 in a top portion of the stack, in the example of FIG. 2 A.
- the stack is shown to be vertically oriented in FIG. 2A, but the LED can be otherwise oriented.
- a stack of single heterostructure (SH) LED's (see FIG. 1 B), or a stack of polymer-based LED devices (see FIG. 1 C), are viable alternatives to the DH LED's, with the SH devices being equally viable as DH devices for light emitters.
- SH and DH devices comprising a combination of vacuum deposited and polymeric light-emitting materials are considered to be within the spirit and scope of this invention.
- Each device structure as device 20 comprises an HTL layer 20 H vacuum-deposited or grown on or otherwise deposited onto the surface of an ITO layer 35 .
- a top ETL layer 20 T sandwiches an EL layer 20 E between the former and HTL layer 20 H, for example, shown in the device construction of FIG. 2 A.
- a thin, semi-transparent low work function (preferably, ⁇ 4 eV) metal layer 26 M having a thickness typically less than 50 ⁇ . Suitable candidates include Mg, Mg/Ag, and As.
- Deposited on the top of metal layer 26 M is another transparent, thin conductive ITO layer 26 I.
- ITO/metal layers 26 the double layer structure of metallic layer 26 M and ITO layer 26 I is referred to as ITO/metal layers 26 .
- Each of the double heterostructure devices as 20 , 21 and 22 have a bottom HTL layer formed on a transparent conductive layer of ITO 26 I or 35 . Next an EL layer is deposited and then another layer of ETL.
- Each of the HTL, ETL, ITO, metal and organic EL layers are transparent because of their composition and minimal thickness.
- Each HTL layer may be from about 50 to 1000 ⁇ thick; each EL layer may be from about 50 to 200 ⁇ thick; each ETL layer may be from about 50 to 1000 ⁇ thick; each metal layer 26 M may be from about 50 to 100 ⁇ thick; and each ITO layer 26 I and 35 may be from about 1000 to 4000 ⁇ thick.
- each of the layers should preferably be kept towards the lower end of the appropriate range referred to above.
- each LED 20 , 21 and 22 are preferably close to about 200 ⁇ thick.
- the ETL and EL layers are provided by a single layer, such as layer 13 , as previously described for the SH of FIG. 1 B.
- This layer 13 is typically Al-quinolate.
- FIG. 2B where the EL layers 20 E, 21 E, and 22 E, respectively, provide both the EL and ETL layer functions.
- the total beam of light from each device is substantially coincident between LED's 20 , 21 and 22 . While the beams of light are coincident in the concentric configuration, the emitting or non-emitting device closer to the glass substrate will be transparent to the emitting device or devices further away from the glass substrate. However, the diodes 20 , 21 and 22 need not be offset from one another and may alternatively be stacked concentrically upon each other, whereupon the beam of light from each device is wholly coincident with the others.
- FIG. 12E A concentric configuration is shown in FIG. 12E which will be described below in regard to device fabrication processes.
- each device emits light through glass substrate 37 in a substantially omnidirectional pattern.
- the voltages across the three LED's in the stack 29 are controlled to provide a desired resultant emission color and brightness for the particular pixel at any instant of time.
- each LED as 22 , 21 and 20 can be energized simultaneously with beams as R, G and B, respectively, for example, directed through and visible via the transparent layers, as shown schematically in FIGS. 2A and 2B.
- Each DH structure 20 , 21 and 22 is capable upon application of a suitable bias voltage of emitting a different color light.
- the double heterostructure LED 20 emits blue light.
- the double heterostructure LED 21 emits green light while the double heterostructure (DH) LED 22 emits red light.
- Different combinations or individual ones of LED's 20 , 21 and 22 can be activated to selectively obtain a desired color of light for the respective pixel partly dependent upon the magnitude of current in each of the LED's 20 , 21 and 22 .
- LED's 20 , 21 and 22 are forward biased by batteries 32 , 31 and 30 , respectively.
- the LED devices 20 , 21 and 22 are made selectively energizable by including means (not shown) for selectively switching batteries 32 , 31 and 30 , respectively, into and out of connection to their respective LED.
- the top ITO contact 26 I for LED 22 is transparent, making the three color device shown useful for headup display applications.
- the top contact 26 I is formed from a thick metal, such as either Mg/Ag, In, Ag, or Au, for reflecting light emitted upward back through substrate 13 , for substantially increasing the efficiency of the device.
- overall device efficiency can be increased by forming a multilayer dielectric thin film coating between glass substrate 37 and the ITO layer 35 , to provide an anti-reflecting surface. Three sets of anti-reflecting layers are required, one to form an anti-reflection coating at each wavelength emitted from the various layers.
- the device of FIG. 2A is constructed in an opposite or inverted manner, for providing light emission out of the top of stack rather than the bottom as the former.
- An example of an inverted structure is to replace ITO layer 35 with a thick, reflective metal layer 38 .
- Blue LED 20 is then provided by interchanging HTL layer 20 H and ETL layer 20 T, with EL layer 20 E remaining sandwiched between the latter two layers.
- the metal contact layer 26 M is now deposited on top of ITO layer 26 I.
- the green LED 21 and red LED 22 portions of the stack are each constructed with inverted layers (the HTL and ETL layers of each are interchanged, followed by inverting the metal and ITO layers) as described for the inverted blue LED 20 .
- the blue device 20 must be on top and the red device 22 on the bottom. Also, the polarities of batteries 30 , 31 , and 32 are reversed. As a result, the current: flow through devices 20 , 21 and 22 , respectively, is in the same direction relative to the embodiment of FIG. 2A, when forward biased for emitting light.
- the device in the cross sectional view has a step-like or staircase profile, in this example.
- the transparent contact areas (ITO) 26 I permit separate biasing of each pixel element in the stack and furthermore the material can be used as an etch stop during the processing steps.
- the separate biasing of each DH LED structure 20 , 21 and 22 allows for wavelength tuning of the pixel output to any of various desired colors of the visible spectrum as defined in the CIE (Commission Internationale de l'Eclairage/International Commission of Illumination) chromaticity standard.
- the blue emitting LED 20 is placed at the bottom of the stack and it is the largest of the three devices. Blue is on the bottom because it is transparent to red and green light.
- the materials “partitioning” using the transparent ITO/metal layers 26 facilitates manufacture of this device as will be described. It is the very unique aspects of the vacuum growth and fabrication processes associated with organic compounds which makes the pixel LED devices shown in FIGS. 2A, 2 B, and 2 C possible.
- the vertical layering shown in FIGS. 2A, 2 B, and 2 C allows for the fabrication of three color pixels with the smallest possible area, hence, making these ideal for high definition displays.
- each device DH structure 20 , 21 and 22 can emit light designated by arrows B, G and R, respectively, either simultaneously or separately.
- the emitted light is from substantially the entire transverse portion of each LED 20 , 21 and 22 , whereby the R, G, and B arrows are not representative of the width of the actual emitted light, respectively.
- the addition or subtraction of colors as R, G and B is integrated by the eye causing different colors and hues to be perceived. This is well known in the field of color vision and display calorimetry.
- the red, green and blue beams of light are substantially coincident. If the devices are made small enough, that is about 50 microns or less, any one of a variety of colors can be produced from the stack. However, it will appear as one color originating from a single pixel.
- the organic materials used in the DH structures are grown one on top of the other or are vertically stacked with the longest wavelength device 22 indicative of red light on the top and the shortest wavelength element 20 indicative of blue light on the bottom. In this manner, one minimizes light absorption in the pixel or in the devices.
- Each of the DH LED devices are separated by ITO/metal layers 26 (specifically, semitransparent metal layers 26 M, and indium tin oxide layers 26 I).
- the ITO layers 26 I can further be treated by metal deposition to provide distinct contact areas on the exposed ITO surfaces, such as contacts 40 , 41 , 42 and 43 .
- contacts 40 , 41 , 42 and 43 are fabricated from indium, platinum, gold, silver or alloys such as Ti/Pt/Au, Cr/Au, or Mg/Ag, for example. Techniques for deposition of contacts using conventional metal deposition or vapor deposition are well known.
- the contacts, such as 40 , 41 , 42 and 43 enable separate biasing of each LED in the stack.
- the significant chemical differences between the organic LED materials and the transparent electrodes 26 I permits the electrodes to act as etch stop layers. This allows for the selective etching and exposure of each pixel element during device processing.
- Each LED 20 , 21 , 22 has its own source of bias potential, in this example shown schematically as batteries 32 , 31 , and 30 , respectively, which enables each LED to emit light. It is understood that suitable signals can be employed in lieu of the batteries 30 , 31 , 32 , respectively. As is known, the LED requires a minimum threshold voltage to emit light (each DH LED) and hence this activating voltage is shown schematically by the battery symbol.
- the EL layers 20 E, 21 E, 22 E may be fabricated from organic compounds selected according to their ability to produce all primary colors and intermediates thereof.
- the organic compounds are generally selected from trivalent metal complexes and derivatives thereof (e.g. trivalent metal quinolate complexes), trivalent metal bridged complexes and derivatives thereof (e.g. trivalent metal bridged quinolate complexes), Schiff base divalent metal complexes, tin (iv) metal complexes, metal acetylacetonate complexes, metal bidentate ligand complexes, bisphosphonates, divalent metal maleonitriledithiolate complexes, molecular charge transfer complexes, aromatic and heterocyclic polymers and rare earth mixed chelates, as described hereinafter.
- trivalent metal complexes and derivatives thereof e.g. trivalent metal quinolate complexes
- trivalent metal bridged complexes and derivatives thereof e.g. trivalent metal bridged quinolate complexes
- the trivalent metal complexes are represented by the structural formula shown in FIG. 3A wherein M is a trivalent metal ion; Q is at least one fused ring with at least one of the fused rings containing at least one nitrogen atom; L is ligand as defined below; p is 1 or 2 and t is 1 or 2 with the proviso that p and t are not the same.
- the trivalent metal quinolate complexes are represented by the structural formula shown in FIGS. 3B through 3J, wherein M is a trivalent metal ion selected from Groups 3-13 of the Periodic Table and the Lanthanides. Al +3 , Ga +3 and In +3 are the preferred trivalent metal ions.
- R of the compounds shown in FIGS. 3B through 3I includes hydrogen, an alkyl group, an aryl group and a heterocyclic group.
- the alkyl group may be straight or branched chain and preferably has from 1 to 8 carbon atoms. Examples of suitable alkyl groups are methyl and ethyl.
- the preferred aryl group is phenyl and examples of the heterocyclic group for R include pyridyl, imidazole, furan and thiophene.
- the alkyl, aryl and heterocyclic groups of R may be substituted with at least one substituent selected from aryl, halogen, cyano and alkoxy, preferably having from 1 to 8 carbon atoms.
- the preferred halogen is chloro.
- the group L of compounds shown in FIGS. 3A through 3I represents a ligand including picolylmethylketone, substituted and unsubstituted salicylaldehyde (e.g. salicylaldehyde substituted with barbituric acid), a group of the formula R 1 (O)CO— wherein R 1 includes the compounds as defined for R as well as halogen, a group of the formula R 1 O— wherein R 1 is as defined above, bistriphenyl siloxides, and quinolates (e.g. 8-hydroxyquinoline) and derivatives thereof (e.g. barbituric acid substituted quinolates).
- M Ga +3
- L is chloro
- R is a lower alkyl group.
- Such compounds generate a blue emission.
- M Ga +3
- L is methyl carboxylate
- complexes emitting in the blue to blue/green region are produced.
- a yellow or red emission is expected by using either a barbituric acid substituted salicylaldehyde or a barbituric acid substituted 8-hydroxyquinoline for the L group.
- Green emissions may be produced by using a quinolate for the L group.
- the number of nitrogen atoms and their position in the fused ring structure shown in FIG. 3C can affect the emission spectra. As shown in FIGS. 3C through 3I, the color of light emitted will change according to the presence of nitrogen atoms in the fused ring structure.
- FIG. 3C shows the presence of nitrogen atoms on the phenoxy side of the compounds which results in a blue emission. This is compared to the compounds of FIG. 3D containing no additional nitrogen atoms in the fused ring. Such compounds emit green light.
- Additional emitting compounds are encompassed by the structural formula shown in FIG. 3E wherein A is an aryl group or a nitrogen containing heterocyclic group which is fused to the existing fused ring structure, and n 1 and n 2 are independently selected from 0, 1 or 2.
- R is as defined above and m 1 and m 2 are independently selected from 1, 2, 3 or 4. It will be understood that the R groups are attached to appropriate positions to the aryl group or heterocyclic group represented by A.
- Aryl groups for A are preferably 5- and 6-membered rings and include phenyl, substituted phenyl, and fused rings comprised of phenyl groups wherein the substituents are preferably those which do not quench fluorescence.
- the nitrogen-containing heterocyclic groups for A include unsubstituted and substituted 5- and 6-membered rings.
- Examples of the substituents for A include alkyl, alkylamino, ether linkages, cyano and trihaloalkyl (e.g. trifluoroalkyl).
- a typical aryl group is phenyl and examples of compounds of FIG. 3E wherein n 1 and n 2 are 1 or 2 are shown in FIGS. 3F through 3J. Each of the compounds shown in FIGS. 3E through 3H is believed to emit red light.
- the trivalent metal bridged quinolate complexes and derivatives thereof which may be employed in the present invention are shown in FIGS. 4B through 4M. These complexes generate green emissions and exhibit superior environmental stability compared to trisquinolates used in prior art devices.
- the trivalent metal ion M used in these complexes is as defined above with Al +3 , Ga +3 , or In +3 being preferred.
- the group Z shown in FIG. 4B has the formula SiR wherein R is as defined above. Z may also be a group of the formula P ⁇ O which forms a phosphate.
- FIGS. 4D through 4M they are similar in structure to the compounds described above in connection with FIGS. 3C through 3J.
- the number of nitrogen atoms and their position in the fused ring structures will determine the color of the light emission.
- the Schiff base divalent metal complexes include those shown in FIGS. 5A and 5B wherein M 1 is a divalent metal chosen from Groups 2-12 of the Periodic Table, preferably Zn (See, Y. Hanada, et al., “Blue Electroluminescence in Thin Films of Axomethin—Zinc Complexes”, Japanese Journal of Applied Physics Vol. 32, pp. L511-L513 (1993).
- the group R 1 is selected from the structural formulas shown in FIGS. 5A and 5B.
- the R 1 group is preferably coordinated to the metal of the complex through the amine or nitrogen of the pyridyl group.
- X is selected from hydrogen, alkyl, alkoxy, each having from 1 to 8 carbon atoms, aryl, a heterocyclic group, phosphino, halide and amine.
- the preferred aryl group is phenyl and the preferred heterocyclic group is selected from pyridyl, imidazole, furan and thiophene.
- the X groups affect the solubility of the Schiff base divalent metal complexes in organic solvents.
- the particular Schiff base divalent metal complex shown in FIG. 5B emits at a wavelength of 520 nm.
- the tin (iv) metal complexes employed in the present invention in the EL layers generate green emissions. Included among these complexes are those having the formula SnL 1 2 L 2 2 where L 1 is selected from salicylaldehydes, salicyclic acid or quinolates (e.g. 8-hydroxyquinoline). L 2 includes all groups as previously defined for R except hydrogen.
- tin (iv) metal complexes where L 1 is a quinolate and L 2 is phenyl have an emission wavelength ( ⁇ em ) of 504 nm, the wavelength resulting from measurements of photoluminescence in the solid state.
- the tin (iv) metal complexes also include those having the structural formula of FIG. 6 wherein A is sulfur or NR 2 where R 2 is selected from hydrogen and substituted or unsubstituted, alkyl and aryl.
- the alkyl group may be straight or branched chain and preferably has from 1 to 8 carbon atoms.
- the preferred aryl group is phenyl.
- the substituents for the alkyl and aryl groups include alkyl and alkoxy having from 1 to 8 carbon atoms, cyano and halogen.
- Y is selected from cyano and substituted or unsubstituted phenyl.
- L 3 may be selected from alkyl, aryl, halide, quinolates (e.g.
- the M(acetylacetonate) 3 complexes shown in FIG. 7 generate a blue emission.
- the metal ion M 2 is selected from trivalent metals of Groups 3-13 of the Periodic Table and the Lanthanides.
- the preferred metal ions are Al +3 , Ga +3 and In +3 .
- the group R in FIG. 7 is the same as defined for R in FIG. 3 B.
- R is methyl
- M is selected from Al +3 , Ga +3 and In +3 , respectively
- the wavelengths resulting from the measurements of photoluminescence in the solid state is 415 nm, 445 nm and 457 nm, respectively (See J. Kido et al., “Organic Electroluminescent Devices using Lanthanide Complexes”, Journal of Alloys and Compounds , Vol. 92, pp. 30-33 (1993).
- the metal bidentate ligand complexes employed in the present invention generally produce blue emissions.
- Such complexes have the formula M 2 DL 4 2 wherein M is selected from trivalent metals of Groups 3-13 of the Periodic Table and the Lanthanides.
- the preferred metal ions are Al +3 , Ga +3 , In +3 and Sc +3 .
- D is a bidentate ligand examples of which are shown in FIG. 8 A. More specifically, the bidentate ligand D includes 2-picolylketones, 2-quinaldylketones and 2-(o-phenoxy) pyridine ketones where the R groups in FIG. 8A are as defined above.
- the preferred groups for L 4 include acetylacetonate; compounds of the formula OR 3 R wherein R 3 is selected from Si, C and R is selected from the same groups as described above; 3,5-di(t-bu) phenol; 2,6-di(t-bu) phenol; 2,6-di(t-bu) cresol; and H 2 Bpz 2 , the latter compounds being shown in FIGS. 8B-8E, respectively.
- the wavelength ( ⁇ em ) resulting from measurement of photoluminescence in the solid state of aluminum (picolylmethylketone) bis [2,6-di(t-bu) phenoxide] is 420 nm.
- the cresol derivative of the above compound also measured 420 nm.
- Aluminum (picolylmethylketone) bis (OSiPh 3 ) and scandium (4-methoxy-picolylmethylketone) bis (acetylacetonate) each measured 433 nm, while aluminum [2-(O-phenoxy)pyridine] bis [2,6-di(t-bu) phenoxide] measured 450 nm.
- Bisphosphonate compounds are another class of compounds which may be used in accordance with the present invention for the EL layers.
- the bisphosphonates are represented by the general formula:
- M 3 is a metal ion. It is a tetravalent metal ion (e.g. Zr +4 , Ti +4 and Hf +4 when x and y both equal 1. When x is 3 and y is 2, the metal ion M 3 is in the divalent state and includes, for example, Zn +2 , Cu +2 and Cd +2 .
- organic as used in the above formula means any aromatic or heterocyclic fluorescent compound that can be bifunctionalized with phosphonate groups.
- the preferred bisphosphonate compounds include phenylene vinylene bisphosphonates as for example those shown in FIGS. 9A and 9B.
- FIG. 9A shows ⁇ -styrenyl stilbene bisphosphonates
- FIG. 9B shows 4,4′-biphenyl di(vinylphosphonates) where R is as described previously and R 4 is selected from substituted and unsubstituted alkyl groups, preferably having 1-8 carbon atoms, and aryl.
- the preferred alkyl groups are methyl and ethyl.
- the preferred aryl group is phenyl.
- the preferred substituents for the alkyl and aryl groups include at least one substituent selected from aryl, halogen, cyano, alkoxy, preferably having from 1 to 8 carbon atoms.
- the divalent metal maleonitriledithiolate (“mnt”) complexes have the structural formula shown in FIG. 10 .
- the divalent metal ion M 1 includes all metal ions having a +2 charge, preferably transition metal ions such as Pt +2 , Zn +2 and Pd +2 .
- Y is selected from cyano and substituted or unsubstituted phenyl. The preferred substituents for phenyl are selected from alkyl, cyano, chloro and 1,2,2-tricyanovinyl.
- L 5 represents a group having no charge.
- Preferred groups for L 5 include P(OR) 3 and P(R) 3 where R is as described above or L 5 may be a chelating ligand such as, for example, 2,2′-dipyridyl; phenanthroline; 1,5-cyclooctadiene; or bis(diphenylphosphino)methane.
- FIGS. 11A-11E show a variety of suitable electron acceptors which may form a charge transfer complex with one of the electron donor structures shown in FIGS. 11F-11J.
- the group R as shown in FIGS. 11A and 11H is the same as described above.
- Films of these charge transfer materials are prepared by either evaporating donor and acceptor molecules from separate cells onto the substrate, or by evaporating the pre-made charge transfer complex directly.
- the emission wavelengths may range from red to blue, depending upon which acceptor is coupled with which donor.
- Polymers of aromatic and heterocyclic compounds which are fluorescent in the solid state may be employed in the present invention for the EL Layers. Such polymers may be used to generate a variety of different colored emissions. Table II provides examples of suitable polymers and the color of their associated emissions.
- the rare earth mixed chelates for use in the present invention include any lanthanide elements (e.g. La, Pr, Nd, Sm, Eu, and Tb) bonded to a bidentate aromatic or heterocyclic ligand.
- the bidentate ligand serves to transport carriers (e.g. electrons) but does not absorb the emission energy.
- the bidentate ligands serve to transfer energy to the metal.
- the ligand in the rare earth mixed chelates include salicylaldehydes and derivatives thereof, salicyclic acid, quinolates, Schiff base ligands, acetylacetonates, phenanthroline, bipyridine, quinoline and pyridine.
- the hole transporting layers 20 H, 21 H and 22 H may be comprised of a porphyrinic compound.
- the hole transporting layers 20 H, 21 H and 22 H may have at least one hole transporting aromatic tertiary amine which is a compound containing at least one trivalent nitrogen atom that is bonded only to carbon atoms, at least one of which is a member of an aromatic ring.
- the aromatic tertiary amine can be an arylamine, such as a monoarylamine, diarylamine, triarylamine, or a polymeric arylamine.
- Other suitable aromatic tertiary amines, as well as all porphyrinic compounds, are disclosed in Tang et al., U.S. Pat. No. 5,294,870, the teachings of which are incorporated herein in their entirety by reference, provided any of such teachings are not inconsistent with any teaching herein.
- the aforementioned and described emitting compounds represented by FIGS. 3A through 3J and FIGS. 4A through 4M are dissolved in a matrix comprised of at least one host compound.
- the host compounds facilitate the carrying of electrons to the emitting compounds to initiate light emission.
- Suitable host compounds include metal bis and/or tris substituted borate complexes.
- the preferred host compounds are selected from metal tris(dihydro bis (1-pyrazolyl) borates) shown in FIG. 17A wherein M is a +3 metal, preferably a Group 13 metal and R 1 through R 5 are selected from the group consisting of hydrogen, an alkyl group and an aryl group.
- the preferred aryl group is phenyl.
- Host compounds also include metal bis(hydro tris(1-pyrazolyl) borates) of the type shown in FIG. 17B wherein M 1 is a +2 metal, preferably a Group 12 metal and R 1 through R 5 are as defined above, as well as metal tris(dihydro bis(1,2,4-triazol-1-yl) borates) where M is a +3 metal, preferably a Group 13 metal and R 1 through R 5 are as defined above, as shown in FIG. 17 C.
- Metal bis(hydro tris (1,2,4-triazol-1-yl) borates) wherein M 1 is a +2 metal, preferably a Group 12 metal and R 1 through R 5 are as defined above are also included and such compounds are represented by the structural formula shown in FIG. 17 D.
- the mole % ratio of the emitting compounds to the host compounds employed in the devices of the present invention is generally in the range of 0.01 to 50.
- the host compounds can be prepared, for example, by the process disclosed in S. Trofimenko J. Am. Chem. Soc ., Vol. 89, p. 6288-6293 (1967). More specifically the diphenyl-bis (1-pyrazolyl) borate ligand is prepared by treating sodium tetraphenylborate with excess equivalents of pyrazole at elevated temperatures. The excess pyrazole is removed by washing the crude product with hexane, followed by sublimation at 190° C. The aluminum complex is prepared by treating aluminum sulfate with three equivalents of the ligand in water. The product precipitates immediately as a white powder.
- a stacked organic LED tricolor pixel may be accomplished by either of two processes: a shadow masking process or a dry etching process. Both processes to be described assume, for illustrative purposes, a double heterostructure LED construction, i.e., utilizing only one organic compound layer for each active emission layer, with light emerging from the bottom glass substrate surface. It should be understood that multiple heterojunction organic LED's having multiple organic compound layers for each active emission layer, and/or inverted structures (with light emerging from the top surface of the stack) can also be fabricated by one skilled in the art making slight modifications to the processes described.
- FIGS. 12 (A-E) The shadow masking process steps according to the present invention are illustrated in FIGS. 12 (A-E).
- a glass substrate 50 to be coated with a layer of ITO 52 is first cleaned by immersing the substrate 50 for about five minutes in boiling trichloroethylene or a similar chlorinated hydrocarbon. This is followed by rinsing in acetone for about five minutes and then in methyl alcohol for approximately five minutes.
- the substrate 50 is then blown dry with ultrahigh purity (UHP) nitrogen. All of the cleaning solvents used are preferably “electronic grade”.
- the ITO layer 52 is formed on substrate 50 in a vacuum using conventional sputtering or electron beam methods.
- a blue emitting LED 55 (see FIG. 12B) is then fabricated on the ITO layer 52 as follows.
- a shadow mask 73 is placed on predetermined outer portions of the ITO layer 52 .
- the shadow mask 73 and other masks used during the shadow masking process should be introduced and removed between process steps without exposing the device to moisture, oxygen and other contaminants which would reduce the operational lifetime of the device. This may be accomplished by changing masks in an environment flooded with nitrogen or an inert gas, or by placing the masks remotely onto the device surface in the vacuum environment by remote handling techniques.
- a 50-100 ⁇ thick hole transporting layer (HTL) 54 and 50-200 ⁇ thick blue emission layer (EL) 56 shown in FIG.
- ETL 12B are sequentially deposited without exposure to air, i.e., in a vacuum.
- An electron transporting layer (ETL) 58 having a thickness preferably of 50-1000 ⁇ is then deposited on EL 56 .
- ETL 58 is then topped with a semitransparent metal layer 60 M which may preferably consist of a 10% Ag in 90% Mg layer, or other low work function metal or metal alloy layer, for example.
- Layer 60 M is very thin, preferably less than 100 ⁇ .
- Layers 54 , 56 , 58 and 60 M may be deposited by any one of a number of conventional directional deposition techniques such as vapor phase deposition, ion beam deposition, electron beam deposition, sputtering and laser ablation.
- ITO contact layer 60 I of about 1000-4000 ⁇ thick is then formed on the metal layer 60 M by means of conventional sputtering or electron beam methods.
- the sandwich layers 60 M and 60 I will be referred to and shown as a single layer 60 , which is substantially the same as the layer 26 of FIG. 2 .
- the low work function metal portion 60 M of each layer 60 directly contacts the ETL layer beneath it, while the ITO layer 60 I contacts the HTL layer immediately above it. Note that the entire device fabrication process is best accomplished by maintaining the vacuum throughout without disturbing the vacuum between steps.
- FIG. 12C shows a green emitting LED 65 which is fabricated on top of layer 60 using substantially the same shadow masking and deposition techniques as those used to fabricate blue emitting LED 55 .
- LED 65 comprises HTL 62 , green emission layer 64 and ETL 66 .
- a second thin ( ⁇ 100 ⁇ thick, thin enough to be semi-transparent but not so thin to lose electrical continuity) metal layer 60 M is deposited on ETL layer 66 , followed by another 1000-4000 ⁇ thick ITO layer 60 I to form a second sandwich layer 60 .
- Red emitting LED 75 fabricated upon layer 60 (upon 60 I to be specific) using similar shadow masking and metal deposition methods.
- Red emitting LED 75 consists of a HTL 70 , a red emitting EL 72 and ETL 74 .
- a top sandwich layer 60 of layers 60 I and 60 M are then formed on LED 75 .
- the top transparent ITO layer 60 I can in an alternative embodiment be replaced by an appropriate metal electrode serving also to function as a mirror for reflecting upwardly directed light back through the substrate 50 , thereby decreasing light losses out of the top of the device.
- Each ETL layer 74 , 66 and 58 has a thickness of 50-200 ⁇ ; each HTL layer 54 , 62 and 70 is 100-500 ⁇ thick; and each EL layer 56 , 64 and 72 is 50-1000 ⁇ thick.
- each of the layers including the ITO/metal layers should be kept as close as possible towards the lower end of the above ranges.
- electrical contacts 51 and 59 on ITO layer 52 , and electrical contacts 88 , 89 , 92 , 94 and 96 on the ITO portion 60 I of ITO/metal layers 60 is then preferably accomplished in one step.
- These electrical contacts may be indium, platinum, gold, silver or combinations such as Ti/Pt/Au, Cr/Au or Mg/Ag. They may be deposited by vapor deposition or other suitable metal deposition techniques after masking off the rest of the device.
- the final step in the shadow masking process is to overcoat the entire device with an insulating layer 97 as shown in FIG. 12E, with the exception of all the metal contacts 51 , 59 , 88 , 89 , 92 , 94 and 96 which are masked.
- Insulating layer 97 is impervious to moisture, oxygen and other contaminants thereby preventing contamination of the LED's.
- Insulating layer 97 may be SiO 2 , a silicon nitride such as Si 2 N 3 or other insulator deposited by electron-beam, sputtering, or pyrolitically enhanced or plasma enhanced CVD.
- the deposition technique used should not elevate the device temperature above 120° C. inasmuch as these high temperatures may degrade the LED characteristics.
- FIGS. 13 (A-F) The dry etching process for fabricating the LED stack according to the invention is illustrated in FIGS. 13 (A-F).
- a glass substrate 102 is first cleaned in the same manner as in the shadow-mask process described above.
- An ITO layer 101 is then deposited on the glass substrate 102 in a vacuum using conventional sputtering or electron beam methods.
- An HTL 104 , blue EL 105 , ETL 106 and sandwich layer comprising metal layer 107 M and ITO layer 107 I, all of generally the same thicknesses as in the shadow-masking process, are then deposited over the full surface of the ITO layer 101 , using either conventional vacuum deposition, or in the case of polymers spin or spray coating techniques.
- ITO/metal sandwich layer 107 consists of a less than 100 ⁇ thick, low work function metal layer 107 M deposited directly on the ETL layer 106 , and a 1000-4000 ⁇ thick ITO layer 107 I on the metal layer 107 M.
- a 1000 ⁇ -2000 ⁇ thick layer of silicon nitride or silicon dioxide masking material 108 is deposited using low temperature plasma CVD.
- a positive photoresist layer 109 such as HPR 1400 J is then spun-on the silicon nitride layer 108 .
- the outer portions 110 see FIG. 13A of the photoresist layer 109 are exposed and removed using standard photolithographic processes.
- the exposed outer portions 110 correspond to the areas where the bottom ITO layer 101 is to be exposed and electrically contacted.
- the outer regions 111 (defined in FIG. 13B) of the silicon nitride layer 108 corresponding to the removed photoresist areas are removed using a CF 4 :O 2 plasma.
- the exposed outer portions of ITO/metal layers 107 I and 107 M are removed.
- An O 2 plasma is then employed to sequentially remove the corresponding exposed outer portion of the ETL layer 106 , EL layer 105 , and HTL layer 104 , respectively, and also to remove the remaining photoresist layer 109 shown in FIG. 13 D.
- a CF 4 :O 2 plasma is again applied to remove the silicon nitride mask 108 , with the resulting blue LED configuration shown in FIG. 13 D.
- 12E is then deposited over the LED stack with suitable patterning to expose electrical contacts, as was described for the shadow masking process.
- a photoresist mask is used to allow dry etching of holes in passivation layer 119 .
- metal 152 is deposited in the holes. A final photoresist layer and excess metal is removed by a “lift-off” process.
- FIGS. 14 (A-C) illustrate embodiments of the invention for facilitating packaging, and for providing a hermetic package for up to four of the multicolor LED devices of the invention, for example.
- the same reference numerals used in FIGS. 14 (A-B) indicate the identical respective features as in FIG. 12 E.
- the package may also be used with the nearly identical structure of FIG. 13 F. Referring to FIG.
- access holes 120 , 122 , and 124 are formed using known etching/photomasking techniques to expose the topmost metal layers 60 M′, 60 M′′, and 60 M′′′, for the blue, green, and red LED (organic light emitting diode) devices, respectively, in this example.
- suitable metal circuit paths 126 , 128 , and 130 are deposited in a path from the exposed metal layers 60 M′, 60 M′′, and 60 M′′′, respectively, to edge located indium solder bumps 132 , 133 , and 134 , respectively, using conventional processing steps.
- anode electrode termination is provided via the metal (Au, for example) circuit path 135 formed to have an inner end contacting ITO layer 52 , and an outer end terminating at an edge located indium solder bump 136 , all provided via conventional processing.
- the device is then overcoated with additional insulating material such as SiNx to form an insulated covering with solder bumps 132 , 133 , 134 , and 136 being exposed along one edge.
- additional insulating material such as SiNx
- the starting material includes a glass substrate 50 coated with an overlayer of indium tin oxide (ITO) 52 .
- ITO indium tin oxide
- Mask ITO layer 52 to deposit an SiO 2 layer 138 in a concentric square band ring pattern, in this example (some other pattern can be employed), on top of ITO layer 52 using conventional techniques.
- Another metal contact 182 is deposited via shadow masking on an edge of ITO layer 52 common to all four of the LED devices, for providing a common anode connection, in this example. Note that if through appropriate masking and etching the four LED devices are made in completely independent layers, four anode contacts, respectively, will have to be provided for the latter array so that it can be operated in a multiplexed manner.
- the multicolor LED array being described in this example is a non-multiplexed array.
- a display 194 which is an RGB organic LED display.
- the dots 195 are ellipsis.
- a complete display as 194 comprises a plurality of pixels such as 196 .
- the pixels are arranged as a XY matrix to cover the entire surface area of a glass sheet coated with ITO.
- Each pixel includes a stacked LED structure as that shown in FIG. 2 .
- each of the lines of terminals designated in FIG. 2 as blue (B), green (G) and red (R) are brought out and coupled to suitable horizontal and vertical scan processors 197 and 198 , respectively, all under control of a display generator 199 which may be a TV unit.
- each matrix of LED's has at least two axes (x,y), and each LED is at the intersection of at least two of the axes.
- the x-axis may represent a horizontal axis
- the y-axis a vertical axis.
- each of the LED's in each line of the display are selectively accessed and addressed and are biased by many means such as by pulse width modulation signals or by staircase generated voltages to enable these devices to emit single colors or multiple colors, so that light emitted from said structures creates an image having a predetermined shape and color.
- the vertical layering technique shown in FIG. 2 allows the fabrication of the three color DH LED pixel within extremely small areas. This allows one to provide high definition displays such as displays that have 300 to 600 lines per inch resolution or greater. Such high resolution would not be obtainable using prior art techniques in which the organic emission layers or fluorescent mediums generating the different colors are laterally spaced from one another.
- FIG. 16 another embodiment of the invention is shown for a multicolor LED device including the stacking of up to N individual LEDs, where N is an integer number 1,2,3 . . . N. Depending upon the state of the technology at any future time, N will have a practical limit.
- the stacked N levels of LEDs can, for example, be provided using either the shadow masking process steps previously described for FIGS. 12 (A-E), or the dry etching process illustrated in FIGS. 13A through 13F.
- the base or bottom portion of the stacked array of FIG. 16 is a glass substrate 102 as shown in FIG. 13F, for example, with an ITO layer 101 formed over substrate 102 .
- the N th level LED device 164 further includes a topmost metal layer (see layer 152 of FIG. 13F) formed over the uppermost ITO layer 162 thereof.
- a passivation layer 119 is deposited over the stack, as in the color stack of FIG. 13 F.
- the material for each EL layer 156 of each LED device is selected for providing a particular color for the associated LED.
- shorter wavelength (blue) devices must lie lower in the stack than the longer wavelength (red) devices to avoid optical absorption by the red emitting layers.
- the color selected for each respective LED and the actual number of stacked LEDs are dependent upon the particular application, and the desired colors and shading capability to be provided.
- Such multi-color devices can also be used in optical communications networks, where each different optical channel is transmitted using a different wavelength emitted from a given device in the stack. The inherently concentric nature of the emitted light allows for coupling of several wavelengths into a single optical transmission fiber.
- access holes are formed down to the ITO layer 162 of each device followed by the deposition of appropriate metallization for facilitating packaging and electrical connection to each of the LED devices in the stack, in a manner similar to that described for the stacked multicolor LED device of FIGS. 14A, 14 B, and 14 C, for example.
- This device can be used to provide a low cost, high resolution, high brightness full color, flat panel display of any size. This widens the scope of this invention to displays as small as a few millimeters to the size of a building, but to a practical limit.
- the images created on the display could be text or illustrations in full color, in any resolution depending on the size of the individual LED's.
- a multicolor stacked LED device such as the above-described three color device of FIG. 2, in another embodiment of the invention can be provided by forming LED 20 from a polymer device as shown in FIG. 1C, or from a deposited metal phosphonate film, rather than having all three layers laid down in vacuo. The two remaining stacked LED's would be formed by vapor deposition.
- Q N4 Synthesis of the above ligand (hereinafter referred to as Q N4 ) occurred in the following manner. 0.955 g of 4,5-diamino-6-hydroxypyrimidine (DHP) and 30 mL of 2M acetic acid were mixed in a beaker. 12.5 mL of 4M sodium acetate was added to the beaker and the beaker was heated to 70° C. 1.5 mL of glyoxal solution (40% in water) was diluted with 10 mL of water, heated to 70° C. and added to the solution of DHP. The mixture was stirred at 70° C. for one hour and then cooled to 10° C. to give a tan colored solid. The solid was isolated by filtration, washed with methanol and dried to give 0.750 g of the ligand Q N4 .
- DHP 4,5-diamino-6-hydroxypyrimidine
- 2M acetic acid 2M acetic acid
- Q N4Me2 Synthesis of the above ligand (hereinafter Q N4Me2 ) occurred in the following manner. 1.00 of 4,5-diamino-6-hydroxypyrimidine (DHP) and 30 mL of 2M acetic acid were mixed in a beaker. 6.8 g of sodium acetate was added to the beaker and the beaker was heated to 70° C. 0.70 mL of 2,3-butandione was diluted with 9 mL of water, heated to 70° C. and added to the solution of DHP. The mixture was stirred at 70° C. for one hour and then cooled to give a tan colored solid. The solid was isolated by filtration, washed with ethanol and dried to give 0.650 g of the ligand Q N4Me2 .
Abstract
Description
TABLE 1 | |||
Complex | Wavelength* | ||
[Platinum(1,5-cyclooctadiene) (mnt)] | 560 nm | ||
[Platinum(P(OEt)3)2(mnt)] | 566 nm | ||
[Platinum(P(OPh)3)2(mnt)] | 605 nm | ||
[Platinum(bis(diphenylphosphino)methane) (mnt)] | 610 nm | ||
[Platinum(PPh3)2(mnt)] | 652 nm | ||
*wavelength resulting from measurement of photoluminescence in the solid state. |
TABLE II | |||
EMISSION | |||
POLYMER | COLOR | ||
poly(para-phenylenevinylene) | blue to green | ||
poly(dialkoxyphenylenevinylene) | red/orange | ||
poly(thiophene) | red | ||
poly(phenylene) | blue | ||
poly(phenylacetylene) | yellow to red | ||
poly(N-vinylcarbazole) | blue | ||
Claims (45)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/693,359 US6358631B1 (en) | 1994-12-13 | 1996-08-06 | Mixed vapor deposited films for electroluminescent devices |
PCT/US1997/012654 WO1998006242A1 (en) | 1996-08-06 | 1997-07-18 | Mixed vapor deposited films for electroluminescent devices |
AU38052/97A AU3805297A (en) | 1996-08-06 | 1997-07-18 | Mixed vapor deposited films for electroluminescent devices |
JP10507934A JP2000516273A (en) | 1996-08-06 | 1997-07-18 | Mixed deposition films for electroluminescent devices. |
EP19970935018 EP0947122A4 (en) | 1996-08-06 | 1997-07-18 | Mixed vapor deposited films for electroluminescent devices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/354,674 US5707745A (en) | 1994-12-13 | 1994-12-13 | Multicolor organic light emitting devices |
US08/693,359 US6358631B1 (en) | 1994-12-13 | 1996-08-06 | Mixed vapor deposited films for electroluminescent devices |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/354,674 Continuation-In-Part US5707745A (en) | 1994-12-13 | 1994-12-13 | Multicolor organic light emitting devices |
Publications (1)
Publication Number | Publication Date |
---|---|
US6358631B1 true US6358631B1 (en) | 2002-03-19 |
Family
ID=24784334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/693,359 Expired - Lifetime US6358631B1 (en) | 1994-12-13 | 1996-08-06 | Mixed vapor deposited films for electroluminescent devices |
Country Status (5)
Country | Link |
---|---|
US (1) | US6358631B1 (en) |
EP (1) | EP0947122A4 (en) |
JP (1) | JP2000516273A (en) |
AU (1) | AU3805297A (en) |
WO (1) | WO1998006242A1 (en) |
Cited By (229)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6489638B2 (en) * | 2000-06-23 | 2002-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20020179899A1 (en) * | 2001-05-29 | 2002-12-05 | Takahiro Nakayama | Electroluminescent film device |
US20030058198A1 (en) * | 2001-09-21 | 2003-03-27 | Lg Electronics Inc. | Electroluminescence panel display apparatus and driving method thereof |
US6558736B2 (en) | 1997-11-17 | 2003-05-06 | The Trustees Of Princeton University | Low pressure vapor phase deposition of organic thin films |
US6582838B2 (en) * | 1996-07-02 | 2003-06-24 | The Trustees Of Princeton University | Red-emitting organic light emitting devices (OLED's) |
US20030203236A1 (en) * | 1997-12-01 | 2003-10-30 | Thompson Mark E. | OLEDs doped with phosphorescent compounds |
US20040027065A1 (en) * | 1996-08-12 | 2004-02-12 | Gong Gu | Vacuum deposited, non-polymeric flexible organic light emitting devices |
US20040124425A1 (en) * | 2001-11-27 | 2004-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US6830828B2 (en) | 1998-09-14 | 2004-12-14 | The Trustees Of Princeton University | Organometallic complexes as phosphorescent emitters in organic LEDs |
US20040262576A1 (en) * | 1999-03-23 | 2004-12-30 | Thompson Mark E. | Organometallic complexes as phosphorescent emitters in organic LEDs |
US20050017628A1 (en) * | 2003-07-22 | 2005-01-27 | Shiva Prakash | Organic electronic device |
US20050019977A1 (en) * | 2003-07-22 | 2005-01-27 | Shiva Prakash | Process for removing an organic layer during fabrication of an organic electronic device and the organic electronic device formed by the process |
US20050088365A1 (en) * | 2003-10-28 | 2005-04-28 | Shunpei Yamazaki | Display device and telecommunication system |
US20050151152A1 (en) * | 2003-12-19 | 2005-07-14 | Eastman Kodak Company | 3D stereo OLED display |
WO2005112084A1 (en) * | 2004-05-18 | 2005-11-24 | Mecharonics Co., Ltd. | Method for forming organic light-emitting layer |
US20060121717A1 (en) * | 2004-12-02 | 2006-06-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bonding structure and fabrication thereof |
US20060233682A1 (en) * | 2002-05-08 | 2006-10-19 | Cherian Kuruvilla A | Plasma-assisted engine exhaust treatment |
US20060263633A1 (en) * | 2005-04-27 | 2006-11-23 | Fuji Photo Film Co., Ltd. | Organic electroluminescent device |
US20070029941A1 (en) * | 2005-06-29 | 2007-02-08 | Naoyuki Ito | Organic electroluminescence display apparatus |
EP1770781A2 (en) | 2005-09-30 | 2007-04-04 | Oki Data Corporation | Composite semiconductor device, print head and image forming apparatus |
US20070185386A1 (en) * | 2006-02-07 | 2007-08-09 | Eric Cheng | Medical device light source |
US20080149948A1 (en) * | 2006-12-05 | 2008-06-26 | Nano Terra Inc. | Edge-Emitting Light-Emitting Diode Arrays and Methods of Making and Using the Same |
US20090012367A1 (en) * | 2003-12-17 | 2009-01-08 | Boston Scientific Scimed, Inc. | Medical device with oled illumination light source |
US20090039290A1 (en) * | 2004-12-30 | 2009-02-12 | E.I. Du Pont De Nemours And Company | Device patterning using irradiation |
US20090206323A1 (en) * | 2008-02-18 | 2009-08-20 | Shin Yokoyama | Light-emitting element and method for manufacturing the same |
US20110031997A1 (en) * | 2009-04-14 | 2011-02-10 | NuPGA Corporation | Method for fabrication of a semiconductor device and structure |
US20110049577A1 (en) * | 2009-04-14 | 2011-03-03 | NuPGA Corporation | System comprising a semiconductor device and structure |
US20110084314A1 (en) * | 2009-10-12 | 2011-04-14 | NuPGA Corporation | System comprising a semiconductor device and structure |
US20110092030A1 (en) * | 2009-04-14 | 2011-04-21 | NuPGA Corporation | System comprising a semiconductor device and structure |
US7935972B2 (en) * | 2007-03-09 | 2011-05-03 | Ivoclar Vivadent Ag | Light emission device |
US20110121366A1 (en) * | 2009-04-14 | 2011-05-26 | NuPGA Corporation | System comprising a semiconductor device and structure |
US8163581B1 (en) | 2010-10-13 | 2012-04-24 | Monolith IC 3D | Semiconductor and optoelectronic devices |
US8203148B2 (en) | 2010-10-11 | 2012-06-19 | Monolithic 3D Inc. | Semiconductor device and structure |
US8258810B2 (en) | 2010-09-30 | 2012-09-04 | Monolithic 3D Inc. | 3D semiconductor device |
US8273610B2 (en) | 2010-11-18 | 2012-09-25 | Monolithic 3D Inc. | Method of constructing a semiconductor device and structure |
US8283215B2 (en) | 2010-10-13 | 2012-10-09 | Monolithic 3D Inc. | Semiconductor and optoelectronic devices |
US8294159B2 (en) | 2009-10-12 | 2012-10-23 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8298875B1 (en) | 2011-03-06 | 2012-10-30 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8330141B2 (en) * | 2008-03-26 | 2012-12-11 | Hiroshima University | Light-emitting device |
US8362800B2 (en) | 2010-10-13 | 2013-01-29 | Monolithic 3D Inc. | 3D semiconductor device including field repairable logics |
US8373230B1 (en) | 2010-10-13 | 2013-02-12 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8373439B2 (en) | 2009-04-14 | 2013-02-12 | Monolithic 3D Inc. | 3D semiconductor device |
US8379458B1 (en) | 2010-10-13 | 2013-02-19 | Monolithic 3D Inc. | Semiconductor device and structure |
US8378494B2 (en) | 2009-04-14 | 2013-02-19 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8378715B2 (en) | 2009-04-14 | 2013-02-19 | Monolithic 3D Inc. | Method to construct systems |
US8384426B2 (en) | 2009-04-14 | 2013-02-26 | Monolithic 3D Inc. | Semiconductor device and structure |
US8427200B2 (en) | 2009-04-14 | 2013-04-23 | Monolithic 3D Inc. | 3D semiconductor device |
US8440542B2 (en) | 2010-10-11 | 2013-05-14 | Monolithic 3D Inc. | Semiconductor device and structure |
US8450804B2 (en) | 2011-03-06 | 2013-05-28 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
US8461035B1 (en) | 2010-09-30 | 2013-06-11 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8476145B2 (en) | 2010-10-13 | 2013-07-02 | Monolithic 3D Inc. | Method of fabricating a semiconductor device and structure |
US8492886B2 (en) | 2010-02-16 | 2013-07-23 | Monolithic 3D Inc | 3D integrated circuit with logic |
US8536023B2 (en) | 2010-11-22 | 2013-09-17 | Monolithic 3D Inc. | Method of manufacturing a semiconductor device and structure |
US8541819B1 (en) | 2010-12-09 | 2013-09-24 | Monolithic 3D Inc. | Semiconductor device and structure |
US8557632B1 (en) | 2012-04-09 | 2013-10-15 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8574929B1 (en) | 2012-11-16 | 2013-11-05 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US8581349B1 (en) | 2011-05-02 | 2013-11-12 | Monolithic 3D Inc. | 3D memory semiconductor device and structure |
US8642416B2 (en) | 2010-07-30 | 2014-02-04 | Monolithic 3D Inc. | Method of forming three dimensional integrated circuit devices using layer transfer technique |
US8669778B1 (en) | 2009-04-14 | 2014-03-11 | Monolithic 3D Inc. | Method for design and manufacturing of a 3D semiconductor device |
US8674470B1 (en) | 2012-12-22 | 2014-03-18 | Monolithic 3D Inc. | Semiconductor device and structure |
US8686428B1 (en) | 2012-11-16 | 2014-04-01 | Monolithic 3D Inc. | Semiconductor device and structure |
US8687399B2 (en) | 2011-10-02 | 2014-04-01 | Monolithic 3D Inc. | Semiconductor device and structure |
US8709880B2 (en) | 2010-07-30 | 2014-04-29 | Monolithic 3D Inc | Method for fabrication of a semiconductor device and structure |
US8742476B1 (en) | 2012-11-27 | 2014-06-03 | Monolithic 3D Inc. | Semiconductor device and structure |
US8754533B2 (en) | 2009-04-14 | 2014-06-17 | Monolithic 3D Inc. | Monolithic three-dimensional semiconductor device and structure |
EP2752866A1 (en) | 2002-08-20 | 2014-07-09 | Global OLED Technology LLC | Color organic light emitting diode display with improved lifetime |
US20140197746A1 (en) * | 2013-01-11 | 2014-07-17 | Lighting Science Group Corporation | Serially-connected light emitting diodes, methods of forming same, and luminaires containing same |
US8803206B1 (en) | 2012-12-29 | 2014-08-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US8901613B2 (en) | 2011-03-06 | 2014-12-02 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
US8902663B1 (en) | 2013-03-11 | 2014-12-02 | Monolithic 3D Inc. | Method of maintaining a memory state |
US8975670B2 (en) | 2011-03-06 | 2015-03-10 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
US8994404B1 (en) | 2013-03-12 | 2015-03-31 | Monolithic 3D Inc. | Semiconductor device and structure |
US9000557B2 (en) | 2012-03-17 | 2015-04-07 | Zvi Or-Bach | Semiconductor device and structure |
US9029173B2 (en) | 2011-10-18 | 2015-05-12 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US9099526B2 (en) | 2010-02-16 | 2015-08-04 | Monolithic 3D Inc. | Integrated circuit device and structure |
US9099424B1 (en) | 2012-08-10 | 2015-08-04 | Monolithic 3D Inc. | Semiconductor system, device and structure with heat removal |
US9117749B1 (en) | 2013-03-15 | 2015-08-25 | Monolithic 3D Inc. | Semiconductor device and structure |
US9197804B1 (en) | 2011-10-14 | 2015-11-24 | Monolithic 3D Inc. | Semiconductor and optoelectronic devices |
US9219005B2 (en) | 2011-06-28 | 2015-12-22 | Monolithic 3D Inc. | Semiconductor system and device |
US20160072069A1 (en) * | 2013-05-01 | 2016-03-10 | Konica Minolta, Inc. | Organic electroluminescent element |
US9360202B2 (en) | 2011-05-13 | 2016-06-07 | Lighting Science Group Corporation | System for actively cooling an LED filament and associated methods |
US9509313B2 (en) | 2009-04-14 | 2016-11-29 | Monolithic 3D Inc. | 3D semiconductor device |
US9577642B2 (en) | 2009-04-14 | 2017-02-21 | Monolithic 3D Inc. | Method to form a 3D semiconductor device |
US9590203B2 (en) * | 2014-06-17 | 2017-03-07 | Samsung Display Co., Ltd. | Organic light-emitting device |
US20170194576A1 (en) * | 2015-12-21 | 2017-07-06 | Udc Ireland Limited | Transition Metal Complexes with Tripodal Ligands and the Use Thereof in OLEDs |
US9871034B1 (en) | 2012-12-29 | 2018-01-16 | Monolithic 3D Inc. | Semiconductor device and structure |
US9913573B2 (en) | 2003-04-01 | 2018-03-13 | Boston Scientific Scimed, Inc. | Endoscopic imaging system |
US9953925B2 (en) | 2011-06-28 | 2018-04-24 | Monolithic 3D Inc. | Semiconductor system and device |
US10043781B2 (en) | 2009-10-12 | 2018-08-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10115663B2 (en) | 2012-12-29 | 2018-10-30 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10127344B2 (en) | 2013-04-15 | 2018-11-13 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US10157909B2 (en) | 2009-10-12 | 2018-12-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10217667B2 (en) | 2011-06-28 | 2019-02-26 | Monolithic 3D Inc. | 3D semiconductor device, fabrication method and system |
US10224279B2 (en) | 2013-03-15 | 2019-03-05 | Monolithic 3D Inc. | Semiconductor device and structure |
US10290682B2 (en) | 2010-10-11 | 2019-05-14 | Monolithic 3D Inc. | 3D IC semiconductor device and structure with stacked memory |
US10297586B2 (en) | 2015-03-09 | 2019-05-21 | Monolithic 3D Inc. | Methods for processing a 3D semiconductor device |
US10325651B2 (en) | 2013-03-11 | 2019-06-18 | Monolithic 3D Inc. | 3D semiconductor device with stacked memory |
US10354995B2 (en) | 2009-10-12 | 2019-07-16 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US10366970B2 (en) | 2009-10-12 | 2019-07-30 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10381328B2 (en) | 2015-04-19 | 2019-08-13 | Monolithic 3D Inc. | Semiconductor device and structure |
US10388863B2 (en) | 2009-10-12 | 2019-08-20 | Monolithic 3D Inc. | 3D memory device and structure |
US10388568B2 (en) | 2011-06-28 | 2019-08-20 | Monolithic 3D Inc. | 3D semiconductor device and system |
US10418369B2 (en) | 2015-10-24 | 2019-09-17 | Monolithic 3D Inc. | Multi-level semiconductor memory device and structure |
US10497713B2 (en) | 2010-11-18 | 2019-12-03 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US10515981B2 (en) | 2015-09-21 | 2019-12-24 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with memory |
US10522225B1 (en) | 2015-10-02 | 2019-12-31 | Monolithic 3D Inc. | Semiconductor device with non-volatile memory |
US10600888B2 (en) | 2012-04-09 | 2020-03-24 | Monolithic 3D Inc. | 3D semiconductor device |
US10600657B2 (en) | 2012-12-29 | 2020-03-24 | Monolithic 3D Inc | 3D semiconductor device and structure |
US10651054B2 (en) | 2012-12-29 | 2020-05-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10679977B2 (en) | 2010-10-13 | 2020-06-09 | Monolithic 3D Inc. | 3D microdisplay device and structure |
CN111602259A (en) * | 2017-12-22 | 2020-08-28 | 诺瓦尔德股份有限公司 | Electronic device and method for manufacturing the same |
US10825779B2 (en) | 2015-04-19 | 2020-11-03 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10833108B2 (en) | 2010-10-13 | 2020-11-10 | Monolithic 3D Inc. | 3D microdisplay device and structure |
US10840239B2 (en) | 2014-08-26 | 2020-11-17 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10847540B2 (en) | 2015-10-24 | 2020-11-24 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US10892016B1 (en) | 2019-04-08 | 2021-01-12 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US10892169B2 (en) | 2012-12-29 | 2021-01-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10896931B1 (en) | 2010-10-11 | 2021-01-19 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10903089B1 (en) | 2012-12-29 | 2021-01-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10910364B2 (en) | 2009-10-12 | 2021-02-02 | Monolitaic 3D Inc. | 3D semiconductor device |
US10943934B2 (en) | 2010-10-13 | 2021-03-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US10978501B1 (en) | 2010-10-13 | 2021-04-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
US10998374B1 (en) | 2010-10-13 | 2021-05-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US11004694B1 (en) | 2012-12-29 | 2021-05-11 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11004719B1 (en) | 2010-11-18 | 2021-05-11 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11011507B1 (en) | 2015-04-19 | 2021-05-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11018156B2 (en) | 2019-04-08 | 2021-05-25 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11018042B1 (en) | 2010-11-18 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11018116B2 (en) | 2012-12-22 | 2021-05-25 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11018191B1 (en) | 2010-10-11 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11018133B2 (en) | 2009-10-12 | 2021-05-25 | Monolithic 3D Inc. | 3D integrated circuit |
US11024673B1 (en) | 2010-10-11 | 2021-06-01 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11030371B2 (en) | 2013-04-15 | 2021-06-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11031275B2 (en) | 2010-11-18 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11031394B1 (en) | 2014-01-28 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11043523B1 (en) | 2010-10-13 | 2021-06-22 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US11056468B1 (en) | 2015-04-19 | 2021-07-06 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11063071B1 (en) | 2010-10-13 | 2021-07-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
US11063024B1 (en) | 2012-12-22 | 2021-07-13 | Monlithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11088130B2 (en) | 2014-01-28 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11087995B1 (en) | 2012-12-29 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11088050B2 (en) | 2012-04-09 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers |
US11094576B1 (en) | 2010-11-18 | 2021-08-17 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11107721B2 (en) | 2010-11-18 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with NAND logic |
US11107808B1 (en) | 2014-01-28 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11114427B2 (en) | 2015-11-07 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor processor and memory device and structure |
US11114464B2 (en) | 2015-10-24 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11121021B2 (en) | 2010-11-18 | 2021-09-14 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11133344B2 (en) | 2010-10-13 | 2021-09-28 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US11158674B2 (en) | 2010-10-11 | 2021-10-26 | Monolithic 3D Inc. | Method to produce a 3D semiconductor device and structure |
US11158652B1 (en) | 2019-04-08 | 2021-10-26 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11163112B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
US11164898B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US11164770B1 (en) | 2010-11-18 | 2021-11-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
US11164811B2 (en) | 2012-04-09 | 2021-11-02 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers and oxide-to-oxide bonding |
US11177140B2 (en) | 2012-12-29 | 2021-11-16 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11211279B2 (en) | 2010-11-18 | 2021-12-28 | Monolithic 3D Inc. | Method for processing a 3D integrated circuit and structure |
US11217565B2 (en) | 2012-12-22 | 2022-01-04 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11217764B2 (en) | 2001-12-05 | 2022-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Organic semiconductor element |
US11227897B2 (en) | 2010-10-11 | 2022-01-18 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
US11251149B2 (en) | 2016-10-10 | 2022-02-15 | Monolithic 3D Inc. | 3D memory device and structure |
US11257867B1 (en) | 2010-10-11 | 2022-02-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with oxide bonds |
US11270055B1 (en) | 2013-04-15 | 2022-03-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11296106B2 (en) | 2019-04-08 | 2022-04-05 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11296115B1 (en) | 2015-10-24 | 2022-04-05 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11302898B2 (en) | 2017-08-25 | 2022-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Display panel having multiple common electrodes |
US11309292B2 (en) | 2012-12-22 | 2022-04-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11315980B1 (en) | 2010-10-11 | 2022-04-26 | Monolithic 3D Inc. | 3D semiconductor device and structure with transistors |
US11327227B2 (en) | 2010-10-13 | 2022-05-10 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
US11329059B1 (en) | 2016-10-10 | 2022-05-10 | Monolithic 3D Inc. | 3D memory devices and structures with thinned single crystal substrates |
US11341309B1 (en) | 2013-04-15 | 2022-05-24 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11355380B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | Methods for producing 3D semiconductor memory device and structure utilizing alignment marks |
US11355381B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11374118B2 (en) | 2009-10-12 | 2022-06-28 | Monolithic 3D Inc. | Method to form a 3D integrated circuit |
US11398569B2 (en) | 2013-03-12 | 2022-07-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11404466B2 (en) | 2010-10-13 | 2022-08-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US11410912B2 (en) | 2012-04-09 | 2022-08-09 | Monolithic 3D Inc. | 3D semiconductor device with vias and isolation layers |
US11430667B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11430668B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11437368B2 (en) | 2010-10-13 | 2022-09-06 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11443971B2 (en) | 2010-11-18 | 2022-09-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11469271B2 (en) | 2010-10-11 | 2022-10-11 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
US11476181B1 (en) | 2012-04-09 | 2022-10-18 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11482440B2 (en) | 2010-12-16 | 2022-10-25 | Monolithic 3D Inc. | 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits |
US11482438B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11482439B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors |
US11487928B2 (en) | 2013-04-15 | 2022-11-01 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11495484B2 (en) | 2010-11-18 | 2022-11-08 | Monolithic 3D Inc. | 3D semiconductor devices and structures with at least two single-crystal layers |
US11508605B2 (en) | 2010-11-18 | 2022-11-22 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11521888B2 (en) | 2010-11-18 | 2022-12-06 | Monolithic 3D Inc. | 3D semiconductor device and structure with high-k metal gate transistors |
US11569117B2 (en) | 2010-11-18 | 2023-01-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
US11574109B1 (en) | 2013-04-15 | 2023-02-07 | Monolithic 3D Inc | Automation methods for 3D integrated circuits and devices |
US11594473B2 (en) | 2012-04-09 | 2023-02-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11600667B1 (en) | 2010-10-11 | 2023-03-07 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
US11605663B2 (en) | 2010-10-13 | 2023-03-14 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11610802B2 (en) | 2010-11-18 | 2023-03-21 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes |
US11616004B1 (en) | 2012-04-09 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11615977B2 (en) | 2010-11-18 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11694922B2 (en) | 2010-10-13 | 2023-07-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11694944B1 (en) | 2012-04-09 | 2023-07-04 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11711928B2 (en) | 2016-10-10 | 2023-07-25 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
US11720736B2 (en) | 2013-04-15 | 2023-08-08 | Monolithic 3D Inc. | Automation methods for 3D integrated circuits and devices |
US11735462B2 (en) | 2010-11-18 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
US11735501B1 (en) | 2012-04-09 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11763864B2 (en) | 2019-04-08 | 2023-09-19 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures with bit-line pillars |
US11784082B2 (en) | 2010-11-18 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11784169B2 (en) | 2012-12-22 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11804396B2 (en) | 2010-11-18 | 2023-10-31 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11812620B2 (en) | 2016-10-10 | 2023-11-07 | Monolithic 3D Inc. | 3D DRAM memory devices and structures with control circuits |
US11854857B1 (en) | 2010-11-18 | 2023-12-26 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11855100B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11855114B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11862503B2 (en) | 2010-11-18 | 2024-01-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11869915B2 (en) | 2010-10-13 | 2024-01-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11869591B2 (en) | 2016-10-10 | 2024-01-09 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
US11869965B2 (en) | 2013-03-11 | 2024-01-09 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
US11881443B2 (en) | 2012-04-09 | 2024-01-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11901210B2 (en) | 2010-11-18 | 2024-02-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11916045B2 (en) | 2012-12-22 | 2024-02-27 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11923230B1 (en) | 2010-11-18 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11923374B2 (en) | 2013-03-12 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11930648B1 (en) | 2016-10-10 | 2024-03-12 | Monolithic 3D Inc. | 3D memory devices and structures with metal layers |
US11929372B2 (en) | 2010-10-13 | 2024-03-12 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11937422B2 (en) | 2015-11-07 | 2024-03-19 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US11935912B2 (en) | 2017-11-27 | 2024-03-19 | Seoul Viosys Co., Ltd. | Light emitting device having commonly connected LED sub-units |
US11935949B1 (en) | 2013-03-11 | 2024-03-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
US11956952B2 (en) | 2015-08-23 | 2024-04-09 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US11961827B1 (en) | 2012-12-22 | 2024-04-16 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11967583B2 (en) | 2012-12-22 | 2024-04-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9711237D0 (en) | 1997-06-02 | 1997-07-23 | Isis Innovation | Organomettallic Complexes |
TW593622B (en) * | 2000-05-19 | 2004-06-21 | Eastman Kodak Co | Method of using predoped materials for making an organic light-emitting device |
KR100917347B1 (en) | 2001-08-29 | 2009-09-16 | 더 트러스티즈 오브 프린스턴 유니버시티 | Organic light emitting devices having carrier blocking layers comprising metal complexs |
JP4409942B2 (en) | 2001-08-29 | 2010-02-03 | ザ トラスティーズ オブ プリンストン ユニバーシテイ | Organic light-emitting device having a carrier transport layer containing a metal complex |
CN100355724C (en) * | 2002-03-15 | 2007-12-19 | 富士通株式会社 | Multidentate ligand, polynuclear metal complex, metal complex chain, metal complex assembly and production thereof |
GB0518968D0 (en) * | 2005-09-16 | 2005-10-26 | Cdt Oxford Ltd | Organic light-emitting device |
JP4769068B2 (en) * | 2005-09-22 | 2011-09-07 | パナソニック電工株式会社 | ORGANIC LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF |
DE102006048202A1 (en) * | 2006-10-11 | 2008-04-17 | Universität Regensburg | Lanthanoid emitter for OLED applications |
JP6204371B2 (en) * | 2011-11-30 | 2017-09-27 | ノヴァレッド ゲーエムベーハー | Organic electronic equipment |
WO2015104939A1 (en) * | 2014-01-08 | 2015-07-16 | コニカミノルタ株式会社 | Lighting device and light-emitting module |
JP6335530B2 (en) * | 2014-01-29 | 2018-05-30 | キヤノン株式会社 | Organic light emitting device |
JP7283428B2 (en) * | 2020-03-26 | 2023-05-30 | 豊田合成株式会社 | light emitting device |
Citations (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3261844A (en) * | 1964-08-05 | 1966-07-19 | Du Pont | Pyrazolyl, triazolyl and tetrazolyl derivatives of group iii-a elements and their compounds with metals and preparation thereof |
US3611069A (en) | 1969-11-12 | 1971-10-05 | Gen Electric | Multiple color light emitting diodes |
US3681381A (en) * | 1968-08-02 | 1972-08-01 | Du Pont | Symmetrical and unsymmetrical pyrazaboles |
US3783353A (en) | 1972-10-27 | 1974-01-01 | Rca Corp | Electroluminescent semiconductor device capable of emitting light of three different wavelengths |
US3840873A (en) * | 1972-04-14 | 1974-10-08 | S Usui | Alpha-numeric character display device |
US3875456A (en) | 1972-04-04 | 1975-04-01 | Hitachi Ltd | Multi-color semiconductor lamp |
US4020389A (en) | 1976-04-05 | 1977-04-26 | Minnesota Mining And Manufacturing Company | Electrode construction for flexible electroluminescent lamp |
JPS5541707A (en) | 1978-09-16 | 1980-03-24 | Fujitsu Ltd | Multi-wavelength radiation element |
US4281053A (en) | 1979-01-22 | 1981-07-28 | Eastman Kodak Company | Multilayer organic photovoltaic elements |
US4291815A (en) | 1980-02-19 | 1981-09-29 | Consolidated Refining Co., Inc. | Ceramic lid assembly for hermetic sealing of a semiconductor chip |
US4298769A (en) | 1979-12-14 | 1981-11-03 | Standard Microsystems Corp. | Hermetic plastic dual-in-line package for a semiconductor integrated circuit |
US4365260A (en) | 1978-10-13 | 1982-12-21 | University Of Illinois Foundation | Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material |
JPS5956391A (en) | 1982-09-27 | 1984-03-31 | 株式会社東芝 | El display unit |
US4558171A (en) | 1984-10-12 | 1985-12-10 | General Electric Company | Hermetic enclosure for electronic components with an optionally transparent cover and a method of making the same |
US4577207A (en) | 1982-12-30 | 1986-03-18 | At&T Bell Laboratories | Dual wavelength optical source |
US4605942A (en) | 1984-10-09 | 1986-08-12 | At&T Bell Laboratories | Multiple wavelength light emitting devices |
US4693777A (en) | 1984-11-30 | 1987-09-15 | Kabushiki Kaisha Toshiba | Apparatus for producing semiconductor devices |
US4720432A (en) | 1987-02-11 | 1988-01-19 | Eastman Kodak Company | Electroluminescent device with organic luminescent medium |
US4769292A (en) * | 1987-03-02 | 1988-09-06 | Eastman Kodak Company | Electroluminescent device with modified thin film luminescent zone |
US4777402A (en) * | 1985-06-07 | 1988-10-11 | Alps Electric Co., Ltd. | Thin film EL display device having multiple EL layers |
JPS63264692A (en) | 1987-03-02 | 1988-11-01 | イーストマン・コダック・カンパニー | Electric field light emitting device having improved membrane light emitting band |
US4791075A (en) | 1987-10-05 | 1988-12-13 | Motorola, Inc. | Process for making a hermetic low cost pin grid array package |
JPH01225092A (en) | 1988-03-04 | 1989-09-07 | Yokogawa Electric Corp | Driving of el luminous element |
US4885211A (en) | 1987-02-11 | 1989-12-05 | Eastman Kodak Company | Electroluminescent device with improved cathode |
JPH028290A (en) | 1988-06-28 | 1990-01-11 | Nec Corp | El element of organic thin film |
US4900584A (en) | 1987-01-12 | 1990-02-13 | Planar Systems, Inc. | Rapid thermal annealing of TFEL panels |
US4950950A (en) | 1989-05-18 | 1990-08-21 | Eastman Kodak Company | Electroluminescent device with silazane-containing luminescent zone |
JPH0393736A (en) | 1989-09-06 | 1991-04-18 | Idemitsu Kosan Co Ltd | New diolefin aromatic compound and production thereof |
JPH03187192A (en) | 1989-12-18 | 1991-08-15 | Seiko Epson Corp | Light emitting element |
US5047687A (en) | 1990-07-26 | 1991-09-10 | Eastman Kodak Company | Organic electroluminescent device with stabilized cathode |
US5059861A (en) | 1990-07-26 | 1991-10-22 | Eastman Kodak Company | Organic electroluminescent device with stabilizing cathode capping layer |
US5064782A (en) | 1989-04-17 | 1991-11-12 | Sumitomo Electric Industries, Ltd. | Method of adhesively and hermetically sealing a semiconductor package lid by scrubbing |
US5075743A (en) | 1989-06-06 | 1991-12-24 | Cornell Research Foundation, Inc. | Quantum well optical device on silicon |
US5077588A (en) | 1989-09-29 | 1991-12-31 | Shin-Etsu Handotai Co., Ltd. | Multiple wavelength light emitting device |
US5084650A (en) | 1990-03-14 | 1992-01-28 | Goldstar Co., Ltd. | Thin-film el display device having a high-contrast ratio |
JPH04137485A (en) | 1990-09-28 | 1992-05-12 | Ricoh Co Ltd | Electroluminesence element |
US5118986A (en) | 1989-06-30 | 1992-06-02 | Ricoh Company, Ltd. | Electroluminescent device |
US5144473A (en) | 1989-03-31 | 1992-09-01 | Kabushiki Kaisha Toshiba | Organic thin film display element |
US5150006A (en) * | 1991-08-01 | 1992-09-22 | Eastman Kodak Company | Blue emitting internal junction organic electroluminescent device (II) |
US5166761A (en) | 1991-04-01 | 1992-11-24 | Midwest Research Institute | Tunnel junction multiple wavelength light-emitting diodes |
US5216331A (en) | 1990-11-28 | 1993-06-01 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence element and light emitting device employing the element |
US5231049A (en) | 1990-11-05 | 1993-07-27 | California Institute Of Technology | Method of manufacturing a distributed light emitting diode flat-screen display for use in televisions |
JPH05331460A (en) | 1992-03-31 | 1993-12-14 | Sanyo Electric Co Ltd | Electroluminescent element |
US5276380A (en) | 1991-12-30 | 1994-01-04 | Eastman Kodak Company | Organic electroluminescent image display device |
JPH061972A (en) | 1991-06-05 | 1994-01-11 | Sumitomo Chem Co Ltd | Organic electroluminescent element |
JPH0633050A (en) | 1991-11-28 | 1994-02-08 | Sanyo Electric Co Ltd | Electroluminescent element |
US5286296A (en) | 1991-01-10 | 1994-02-15 | Sony Corporation | Multi-chamber wafer process equipment having plural, physically communicating transfer means |
JPH0668977A (en) | 1992-08-13 | 1994-03-11 | Konica Corp | Multicolored electroluminescence display device |
US5294870A (en) | 1991-12-30 | 1994-03-15 | Eastman Kodak Company | Organic electroluminescent multicolor image display device |
US5294869A (en) | 1991-12-30 | 1994-03-15 | Eastman Kodak Company | Organic electroluminescent multicolor image display device |
US5315129A (en) | 1990-08-20 | 1994-05-24 | University Of Southern California | Organic optoelectronic devices and methods |
JPH06172751A (en) | 1992-07-13 | 1994-06-21 | Eastman Kodak Co | Luminescent composition and internally joined organic electroluminescent element |
US5324604A (en) | 1991-06-17 | 1994-06-28 | Eastman Kodak Company | Multi-active electrophotographic element and imaging process using free radicals as charge transport material |
US5329540A (en) | 1993-03-31 | 1994-07-12 | The United States Of America As Represented By The Secretary Of The Navy | Silicate gel dye laser |
JPH06212153A (en) | 1993-01-14 | 1994-08-02 | Toyo Ink Mfg Co Ltd | Organic electroluminescent element |
US5343050A (en) | 1992-01-07 | 1994-08-30 | Kabushiki Kaisha Toshiba | Organic electroluminescent device with low barrier height |
US5352543A (en) | 1990-10-31 | 1994-10-04 | Goldstar Co., Ltd. | Structure of thin film electroluminescent device |
JPH06283267A (en) | 1993-03-25 | 1994-10-07 | Sanyo Electric Co Ltd | Electroluminescent element |
JPH06302383A (en) | 1993-04-16 | 1994-10-28 | Sharp Corp | El element and liquid crystal display device |
US5391896A (en) | 1992-09-02 | 1995-02-21 | Midwest Research Institute | Monolithic multi-color light emission/detection device |
WO1995006400A1 (en) | 1993-08-26 | 1995-03-02 | Cambridge Display Technology Limited | Electroluminescent devices |
JPH0757873A (en) | 1993-08-20 | 1995-03-03 | Matsushita Electric Ind Co Ltd | Organic light emitting element and image display device |
US5405709A (en) | 1993-09-13 | 1995-04-11 | Eastman Kodak Company | White light emitting internal junction organic electroluminescent device |
US5405710A (en) | 1993-11-22 | 1995-04-11 | At&T Corp. | Article comprising microcavity light sources |
US5409783A (en) | 1994-02-24 | 1995-04-25 | Eastman Kodak Company | Red-emitting organic electroluminescent device |
US5416494A (en) | 1991-12-24 | 1995-05-16 | Nippondenso Co., Ltd. | Electroluminescent display |
US5424560A (en) * | 1994-05-31 | 1995-06-13 | Motorola, Inc. | Integrated multicolor organic led array |
US5427858A (en) | 1990-11-30 | 1995-06-27 | Idemitsu Kosan Company Limited | Organic electroluminescence device with a fluorine polymer layer |
US5429884A (en) | 1992-01-17 | 1995-07-04 | Pioneer Electronic Corporation | Organic electroluminescent element |
US5449432A (en) | 1993-10-25 | 1995-09-12 | Applied Materials, Inc. | Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabrication |
US5449564A (en) | 1992-10-29 | 1995-09-12 | Sanyo Electric Co., Ltd. | Organic electroluminescent element having improved durability |
US5457565A (en) | 1992-11-19 | 1995-10-10 | Pioneer Electronic Corporation | Organic electroluminescent device |
US5456988A (en) | 1992-01-31 | 1995-10-10 | Sanyo Electric Co., Ltd. | Organic electroluminescent device having improved durability |
US5478658A (en) | 1994-05-20 | 1995-12-26 | At&T Corp. | Article comprising a microcavity light source |
US5486406A (en) | 1994-11-07 | 1996-01-23 | Motorola | Green-emitting organometallic complexes for use in light emitting devices |
WO1996019792A2 (en) | 1994-12-13 | 1996-06-27 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
US5540999A (en) | 1993-09-09 | 1996-07-30 | Takakazu Yamamoto | EL element using polythiophene |
US5552547A (en) | 1995-02-13 | 1996-09-03 | Shi; Song Q. | Organometallic complexes with built-in fluorescent dyes for use in light emitting devices |
US5578379A (en) | 1991-12-03 | 1996-11-26 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Device comprising a luminescent material |
US5583350A (en) | 1995-11-02 | 1996-12-10 | Motorola | Full color light emitting diode display assembly |
US5598059A (en) | 1994-04-28 | 1997-01-28 | Planar Systems, Inc. | AC TFEL device having a white light emitting multilayer phosphor |
US5601903A (en) | 1993-08-27 | 1997-02-11 | Sanyo Electric Co., Ltd. | Organic electroluminescent elements |
US5604398A (en) | 1994-09-16 | 1997-02-18 | Electronics And Telecommunications Research Institute | Electroluminescence light-emitting device with multi-layer light-emitting structure |
US5617445A (en) | 1995-06-07 | 1997-04-01 | Picolight Incorporated | Quantum cavity light emitting element |
US5629530A (en) | 1994-05-16 | 1997-05-13 | U.S. Phillips Corporation | Semiconductor device having an organic semiconductor material |
US5641611A (en) | 1995-08-21 | 1997-06-24 | Motorola | Method of fabricating organic LED matrices |
US5663573A (en) | 1995-03-17 | 1997-09-02 | The Ohio State University | Bipolar electroluminescent device |
US5672938A (en) | 1995-09-29 | 1997-09-30 | Fed Corporation | Light emission device comprising light emitting organic material and electron injection enhancement structure |
US5703436A (en) | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
US5719467A (en) | 1995-07-27 | 1998-02-17 | Hewlett-Packard Company | Organic electroluminescent device |
US5755938A (en) | 1993-08-24 | 1998-05-26 | Alps Electric Co., Ltd. | Single chamber for CVD and sputtering film manufacturing |
US5757139A (en) | 1997-02-03 | 1998-05-26 | The Trustees Of Princeton University | Driving circuit for stacked organic light emitting devices |
US5834893A (en) | 1996-12-23 | 1998-11-10 | The Trustees Of Princeton University | High efficiency organic light emitting devices with light directing structures |
US5834130A (en) | 1994-05-26 | 1998-11-10 | Sumitomo Electric Industries, Ltd. | Organic electroluminescent device |
US5881089A (en) | 1997-05-13 | 1999-03-09 | Lucent Technologies Inc. | Article comprising an organic laser |
US5917280A (en) | 1997-02-03 | 1999-06-29 | The Trustees Of Princeton University | Stacked organic light emitting devices |
US5994835A (en) | 1997-01-13 | 1999-11-30 | Xerox Corporation | Thin film organic light emitting diode with edge emitter waveguide and electron injection layer |
JP3187192B2 (en) | 1992-03-09 | 2001-07-11 | ハーキュリーズ・インコーポレーテッド | Papermaking method to improve paper softness |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0371595A (en) * | 1989-08-10 | 1991-03-27 | Toshiba Corp | Organic el element |
US5141671A (en) * | 1991-08-01 | 1992-08-25 | Eastman Kodak Company | Mixed ligand 8-quinolinolato aluminum chelate luminophors |
DE69526614T2 (en) * | 1994-09-12 | 2002-09-19 | Motorola Inc | Light emitting devices containing organometallic complexes. |
-
1996
- 1996-08-06 US US08/693,359 patent/US6358631B1/en not_active Expired - Lifetime
-
1997
- 1997-07-18 WO PCT/US1997/012654 patent/WO1998006242A1/en not_active Application Discontinuation
- 1997-07-18 EP EP19970935018 patent/EP0947122A4/en active Pending
- 1997-07-18 AU AU38052/97A patent/AU3805297A/en not_active Abandoned
- 1997-07-18 JP JP10507934A patent/JP2000516273A/en active Pending
Patent Citations (103)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3261844A (en) * | 1964-08-05 | 1966-07-19 | Du Pont | Pyrazolyl, triazolyl and tetrazolyl derivatives of group iii-a elements and their compounds with metals and preparation thereof |
US3681381A (en) * | 1968-08-02 | 1972-08-01 | Du Pont | Symmetrical and unsymmetrical pyrazaboles |
US3611069A (en) | 1969-11-12 | 1971-10-05 | Gen Electric | Multiple color light emitting diodes |
US3875456A (en) | 1972-04-04 | 1975-04-01 | Hitachi Ltd | Multi-color semiconductor lamp |
US3840873A (en) * | 1972-04-14 | 1974-10-08 | S Usui | Alpha-numeric character display device |
US3783353A (en) | 1972-10-27 | 1974-01-01 | Rca Corp | Electroluminescent semiconductor device capable of emitting light of three different wavelengths |
US4020389A (en) | 1976-04-05 | 1977-04-26 | Minnesota Mining And Manufacturing Company | Electrode construction for flexible electroluminescent lamp |
JPS5541707A (en) | 1978-09-16 | 1980-03-24 | Fujitsu Ltd | Multi-wavelength radiation element |
US4365260A (en) | 1978-10-13 | 1982-12-21 | University Of Illinois Foundation | Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material |
US4281053A (en) | 1979-01-22 | 1981-07-28 | Eastman Kodak Company | Multilayer organic photovoltaic elements |
US4298769A (en) | 1979-12-14 | 1981-11-03 | Standard Microsystems Corp. | Hermetic plastic dual-in-line package for a semiconductor integrated circuit |
US4291815A (en) | 1980-02-19 | 1981-09-29 | Consolidated Refining Co., Inc. | Ceramic lid assembly for hermetic sealing of a semiconductor chip |
US4291815B1 (en) | 1980-02-19 | 1998-09-29 | Semiconductor Packaging Materi | Ceramic lid assembly for hermetic sealing of a semiconductor chip |
JPS5956391A (en) | 1982-09-27 | 1984-03-31 | 株式会社東芝 | El display unit |
US4577207A (en) | 1982-12-30 | 1986-03-18 | At&T Bell Laboratories | Dual wavelength optical source |
US4605942A (en) | 1984-10-09 | 1986-08-12 | At&T Bell Laboratories | Multiple wavelength light emitting devices |
US4558171A (en) | 1984-10-12 | 1985-12-10 | General Electric Company | Hermetic enclosure for electronic components with an optionally transparent cover and a method of making the same |
US4693777A (en) | 1984-11-30 | 1987-09-15 | Kabushiki Kaisha Toshiba | Apparatus for producing semiconductor devices |
US4777402A (en) * | 1985-06-07 | 1988-10-11 | Alps Electric Co., Ltd. | Thin film EL display device having multiple EL layers |
US4900584A (en) | 1987-01-12 | 1990-02-13 | Planar Systems, Inc. | Rapid thermal annealing of TFEL panels |
US4720432A (en) | 1987-02-11 | 1988-01-19 | Eastman Kodak Company | Electroluminescent device with organic luminescent medium |
US4885211A (en) | 1987-02-11 | 1989-12-05 | Eastman Kodak Company | Electroluminescent device with improved cathode |
US4769292A (en) * | 1987-03-02 | 1988-09-06 | Eastman Kodak Company | Electroluminescent device with modified thin film luminescent zone |
JPS63264692A (en) | 1987-03-02 | 1988-11-01 | イーストマン・コダック・カンパニー | Electric field light emitting device having improved membrane light emitting band |
US4791075A (en) | 1987-10-05 | 1988-12-13 | Motorola, Inc. | Process for making a hermetic low cost pin grid array package |
JPH01225092A (en) | 1988-03-04 | 1989-09-07 | Yokogawa Electric Corp | Driving of el luminous element |
JPH028290A (en) | 1988-06-28 | 1990-01-11 | Nec Corp | El element of organic thin film |
US5144473A (en) | 1989-03-31 | 1992-09-01 | Kabushiki Kaisha Toshiba | Organic thin film display element |
US5064782A (en) | 1989-04-17 | 1991-11-12 | Sumitomo Electric Industries, Ltd. | Method of adhesively and hermetically sealing a semiconductor package lid by scrubbing |
US4950950A (en) | 1989-05-18 | 1990-08-21 | Eastman Kodak Company | Electroluminescent device with silazane-containing luminescent zone |
US5075743A (en) | 1989-06-06 | 1991-12-24 | Cornell Research Foundation, Inc. | Quantum well optical device on silicon |
US5118986A (en) | 1989-06-30 | 1992-06-02 | Ricoh Company, Ltd. | Electroluminescent device |
JPH0393736A (en) | 1989-09-06 | 1991-04-18 | Idemitsu Kosan Co Ltd | New diolefin aromatic compound and production thereof |
US5077588A (en) | 1989-09-29 | 1991-12-31 | Shin-Etsu Handotai Co., Ltd. | Multiple wavelength light emitting device |
JPH03187192A (en) | 1989-12-18 | 1991-08-15 | Seiko Epson Corp | Light emitting element |
US5084650A (en) | 1990-03-14 | 1992-01-28 | Goldstar Co., Ltd. | Thin-film el display device having a high-contrast ratio |
US5047687A (en) | 1990-07-26 | 1991-09-10 | Eastman Kodak Company | Organic electroluminescent device with stabilized cathode |
US5059861A (en) | 1990-07-26 | 1991-10-22 | Eastman Kodak Company | Organic electroluminescent device with stabilizing cathode capping layer |
US5315129A (en) | 1990-08-20 | 1994-05-24 | University Of Southern California | Organic optoelectronic devices and methods |
JPH04137485A (en) | 1990-09-28 | 1992-05-12 | Ricoh Co Ltd | Electroluminesence element |
US5352543A (en) | 1990-10-31 | 1994-10-04 | Goldstar Co., Ltd. | Structure of thin film electroluminescent device |
US5231049A (en) | 1990-11-05 | 1993-07-27 | California Institute Of Technology | Method of manufacturing a distributed light emitting diode flat-screen display for use in televisions |
US5216331A (en) | 1990-11-28 | 1993-06-01 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence element and light emitting device employing the element |
US5505985A (en) | 1990-11-30 | 1996-04-09 | Idemitsu Kosan Company Limited | Process for producing an organic electroluminescence device |
US5427858A (en) | 1990-11-30 | 1995-06-27 | Idemitsu Kosan Company Limited | Organic electroluminescence device with a fluorine polymer layer |
US5286296A (en) | 1991-01-10 | 1994-02-15 | Sony Corporation | Multi-chamber wafer process equipment having plural, physically communicating transfer means |
US5166761A (en) | 1991-04-01 | 1992-11-24 | Midwest Research Institute | Tunnel junction multiple wavelength light-emitting diodes |
JPH061972A (en) | 1991-06-05 | 1994-01-11 | Sumitomo Chem Co Ltd | Organic electroluminescent element |
US5324604A (en) | 1991-06-17 | 1994-06-28 | Eastman Kodak Company | Multi-active electrophotographic element and imaging process using free radicals as charge transport material |
US5150006A (en) * | 1991-08-01 | 1992-09-22 | Eastman Kodak Company | Blue emitting internal junction organic electroluminescent device (II) |
JPH0633050A (en) | 1991-11-28 | 1994-02-08 | Sanyo Electric Co Ltd | Electroluminescent element |
US5578379A (en) | 1991-12-03 | 1996-11-26 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Device comprising a luminescent material |
US5416494A (en) | 1991-12-24 | 1995-05-16 | Nippondenso Co., Ltd. | Electroluminescent display |
US5294869A (en) | 1991-12-30 | 1994-03-15 | Eastman Kodak Company | Organic electroluminescent multicolor image display device |
US5276380A (en) | 1991-12-30 | 1994-01-04 | Eastman Kodak Company | Organic electroluminescent image display device |
US5294870A (en) | 1991-12-30 | 1994-03-15 | Eastman Kodak Company | Organic electroluminescent multicolor image display device |
US5343050A (en) | 1992-01-07 | 1994-08-30 | Kabushiki Kaisha Toshiba | Organic electroluminescent device with low barrier height |
US5429884A (en) | 1992-01-17 | 1995-07-04 | Pioneer Electronic Corporation | Organic electroluminescent element |
US5456988A (en) | 1992-01-31 | 1995-10-10 | Sanyo Electric Co., Ltd. | Organic electroluminescent device having improved durability |
JP3187192B2 (en) | 1992-03-09 | 2001-07-11 | ハーキュリーズ・インコーポレーテッド | Papermaking method to improve paper softness |
JPH05331460A (en) | 1992-03-31 | 1993-12-14 | Sanyo Electric Co Ltd | Electroluminescent element |
JPH06172751A (en) | 1992-07-13 | 1994-06-21 | Eastman Kodak Co | Luminescent composition and internally joined organic electroluminescent element |
JPH0668977A (en) | 1992-08-13 | 1994-03-11 | Konica Corp | Multicolored electroluminescence display device |
US5391896A (en) | 1992-09-02 | 1995-02-21 | Midwest Research Institute | Monolithic multi-color light emission/detection device |
US5449564A (en) | 1992-10-29 | 1995-09-12 | Sanyo Electric Co., Ltd. | Organic electroluminescent element having improved durability |
US5457565A (en) | 1992-11-19 | 1995-10-10 | Pioneer Electronic Corporation | Organic electroluminescent device |
JPH06212153A (en) | 1993-01-14 | 1994-08-02 | Toyo Ink Mfg Co Ltd | Organic electroluminescent element |
JPH06283267A (en) | 1993-03-25 | 1994-10-07 | Sanyo Electric Co Ltd | Electroluminescent element |
US5329540A (en) | 1993-03-31 | 1994-07-12 | The United States Of America As Represented By The Secretary Of The Navy | Silicate gel dye laser |
JPH06302383A (en) | 1993-04-16 | 1994-10-28 | Sharp Corp | El element and liquid crystal display device |
JPH0757873A (en) | 1993-08-20 | 1995-03-03 | Matsushita Electric Ind Co Ltd | Organic light emitting element and image display device |
US5755938A (en) | 1993-08-24 | 1998-05-26 | Alps Electric Co., Ltd. | Single chamber for CVD and sputtering film manufacturing |
WO1995006400A1 (en) | 1993-08-26 | 1995-03-02 | Cambridge Display Technology Limited | Electroluminescent devices |
EP0715803A1 (en) | 1993-08-26 | 1996-06-12 | Cambridge Display Tech Ltd | Electroluminescent devices |
US5821690A (en) | 1993-08-26 | 1998-10-13 | Cambridge Display Technology Limited | Electroluminescent devices having a light-emitting layer |
US5601903A (en) | 1993-08-27 | 1997-02-11 | Sanyo Electric Co., Ltd. | Organic electroluminescent elements |
US5540999A (en) | 1993-09-09 | 1996-07-30 | Takakazu Yamamoto | EL element using polythiophene |
US5405709A (en) | 1993-09-13 | 1995-04-11 | Eastman Kodak Company | White light emitting internal junction organic electroluminescent device |
US5449432A (en) | 1993-10-25 | 1995-09-12 | Applied Materials, Inc. | Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabrication |
US5405710A (en) | 1993-11-22 | 1995-04-11 | At&T Corp. | Article comprising microcavity light sources |
US5409783A (en) | 1994-02-24 | 1995-04-25 | Eastman Kodak Company | Red-emitting organic electroluminescent device |
US5598059A (en) | 1994-04-28 | 1997-01-28 | Planar Systems, Inc. | AC TFEL device having a white light emitting multilayer phosphor |
US5629530A (en) | 1994-05-16 | 1997-05-13 | U.S. Phillips Corporation | Semiconductor device having an organic semiconductor material |
US5478658A (en) | 1994-05-20 | 1995-12-26 | At&T Corp. | Article comprising a microcavity light source |
US5834130A (en) | 1994-05-26 | 1998-11-10 | Sumitomo Electric Industries, Ltd. | Organic electroluminescent device |
US5424560A (en) * | 1994-05-31 | 1995-06-13 | Motorola, Inc. | Integrated multicolor organic led array |
US5604398A (en) | 1994-09-16 | 1997-02-18 | Electronics And Telecommunications Research Institute | Electroluminescence light-emitting device with multi-layer light-emitting structure |
US5486406A (en) | 1994-11-07 | 1996-01-23 | Motorola | Green-emitting organometallic complexes for use in light emitting devices |
WO1996019792A2 (en) | 1994-12-13 | 1996-06-27 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
US5703436A (en) | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
US5707745A (en) | 1994-12-13 | 1998-01-13 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
US5552547A (en) | 1995-02-13 | 1996-09-03 | Shi; Song Q. | Organometallic complexes with built-in fluorescent dyes for use in light emitting devices |
US5663573A (en) | 1995-03-17 | 1997-09-02 | The Ohio State University | Bipolar electroluminescent device |
US5617445A (en) | 1995-06-07 | 1997-04-01 | Picolight Incorporated | Quantum cavity light emitting element |
US5719467A (en) | 1995-07-27 | 1998-02-17 | Hewlett-Packard Company | Organic electroluminescent device |
US5641611A (en) | 1995-08-21 | 1997-06-24 | Motorola | Method of fabricating organic LED matrices |
US5672938A (en) | 1995-09-29 | 1997-09-30 | Fed Corporation | Light emission device comprising light emitting organic material and electron injection enhancement structure |
US5583350A (en) | 1995-11-02 | 1996-12-10 | Motorola | Full color light emitting diode display assembly |
US5834893A (en) | 1996-12-23 | 1998-11-10 | The Trustees Of Princeton University | High efficiency organic light emitting devices with light directing structures |
US5994835A (en) | 1997-01-13 | 1999-11-30 | Xerox Corporation | Thin film organic light emitting diode with edge emitter waveguide and electron injection layer |
US5757139A (en) | 1997-02-03 | 1998-05-26 | The Trustees Of Princeton University | Driving circuit for stacked organic light emitting devices |
US5917280A (en) | 1997-02-03 | 1999-06-29 | The Trustees Of Princeton University | Stacked organic light emitting devices |
US5881089A (en) | 1997-05-13 | 1999-03-09 | Lucent Technologies Inc. | Article comprising an organic laser |
Non-Patent Citations (30)
Title |
---|
Burrows et al., Metalion Dependent . . . Applied Phys Letters 64, pp. 2718-2720 May 1994, Called Appl. Phys. Letters, vol. 64.* |
Burrows, et al., Electrolumin . . . , Applied Physics Letters 64, Apr. 1994, pp. 2285-2287, Called Appl. Phys. Letters vol. 64.* |
C. Adachi, T. Tsutsui, and S. Saito, "Blue Light-Emitting Organic Electroluminescent Devices", Appl. Phys. Lett., 56, pp. 799 (1990). |
C.W. Tang and S.A. VanSlyke, "Organic Electroluminescent Diodes", Appl. Phys. Lett., 51, pp. 913 (1987). |
Chen and Shi, "Metal Chelates as emitting materials for organic electroluminescence," Coord. Chem. Rev., v.171 (May 1998) pp. 161-174. |
Curtis E. Johnson, Richard Eisenberg, Ted R. Evans, and Mitch S. Burberry, "Luminescent Iridium(I), Rhodium(I), and Platinum(II) Dithiolate Complexes", Journal of the American Chemical Society, 1983, vol. 105, pp. 1795-1802. |
D.Z. Garbuzov, V. Bulovic, P.E. Burrows, and S.R. Forrest, "Photoluminescence Efficiency and Absorption of Aluminum-Tris-Quinolate (Alq3) Thin Films", Chem. Phys. Lett., (1996). |
Frescura, et al., "Large High-Density Monolithic . . . ," IEEE Transactions on Electron Devices, vol. ED-24, No.7 (Jul. 1977) pp. 891-898. |
Garbuzou et al, Photoluminescence . . . , Chem. Phys. Letters, Feb. 1996, pp. 433-437 (Called Chem. Physics Letters.* |
Hoshino, et al., "Electroluminescence from triplet excited states of benzophenone," Appl. Phys. Lett., v.69(2) (Jul. 1996) pp. 224-226. |
Junji Kido and Katsutoshi Nagai, "Organic Electroluminescent Devices Using Lanthanide Complexes", Journal of Alloys and Compounds, 1993, vol. 192, pp. 30-33. |
K. Sreenivas et al., "Preparation and Characterization of RF Sputtered Indium Tin Oxide Films", J. Appl. Phys., 57(2), Jan. 15, 1985. |
K. Sreenivas, et al., "Preparation and Characterization of RF Sputtered Indium Tin Oxide Films", J. Appl. Phys., 57(2), Jan. 15, 1985. |
K.L. Chopra et al., "Transparent Conductors-A Status Review", Thin Solid Films, vol. 102 (1983). |
L. R. Gilbert et al., "Comparison of ITO Sputtering Process from a Ceramic and Alloy Targets onto Room Temperature PET Substrates", Society for Vacuum Pauters, 36 Conf. Proc., 1993, p. 236. |
N. Takada, T. Tsutsui, and S. Saito, "Strongly Directed Emission from Controlled-Spontaneous-Emission electroluminescent Diodes with Europium Complex as an Emitter", Japanese J. Appl. Phys., p. 33, L863 (1994). |
P.E. Burrows and S.R. Forest, "Electroluminescence from Trap-Limited Current Transport in Vacuum Deposited Organic Light Emitting Devices", Appl. Phys. Lett., pp. 2285 (1993). |
P.E. Burrows, L.S. Sapochak, D.M. McCarty, S.R. Forrest, and M.E. Thompson, "Metal Ion Dependent Luninescence Effects in Metal Tris-Quinolate Organic Heterojunction Light Emitting Devices", Appl. Phys. Lett., 64, pp. 2718 (1994). |
R.H. Partridge, "Electroluminescence from polyvinylcarbazole films: 3. Electroluminescent devices", Polymer, vol. 24, pp. 748-754, Jun. 1983. |
S. Honda et al., "Oxygen Content of Indium Tin Oxide Films Fabricated by Reactive Sputtering", J. Vac. Sci. Technol. A, 13(3), May/Jun. 1995. |
S.B. Lee et al., "Electronic and Optical Properties of Room Temperature Sputter Deposited Indium Tin Oxide", J. Vac. Sci. Technol. A, 11(5), Sep./Oct. 1993. |
S.W. Depp and W.E. Howard, "Flat Panel Displays", Scientific American, Mar. 1993, pp. 90-97. |
Shoustikov, et al., "Orange and red light-emitting devices . . . ," Synth. Met., v.91(1-3) (May 1997) pp. 217-221. |
T. Karasawa and Y. Miyata, "Electrical and Optical Properties of Indium Tin Oxide Thin Films Deposited on Unheated Substrates by D.C. Reactive Sputtering", Thin Solid Films, vol. 223 (1993). |
Tang and Van Slyke, Appl. Phys. Letter, 51 (12) 21, p. 913-915, 1987.* |
Tang et al., Abstract of J. of Appl. Phys (1989) 65 (9) pp. 3610-3616, 1989.* |
Tang et al., Organic Electroluminescent . . . , Applied Phys. Letters pp. 913-915 Called Appl. Phys. Letters, vol. 51, Sep. 1987.* |
Trofimenko, J. Amer. Chem. Soc. vol. 89, pp. 6288-6294 Called JACS, 1967.* |
Trofimenko, J. Amer. Chem. Soc., v.89 (1967) pp. 6288-6294. |
Yuji Hamada, Takeshi Sano, Masayuki Fujita, Takanori Fujii, Yoshitaka Nishio and Kenichi Shibata; "Blue Electroluminescence in Thin Films of Azomethin-Zinc Complexes", Japanese Journal of Applied Physics, 1993, vol. 32, pp. L511-L513. |
Cited By (332)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6582838B2 (en) * | 1996-07-02 | 2003-06-24 | The Trustees Of Princeton University | Red-emitting organic light emitting devices (OLED's) |
US20050079279A1 (en) * | 1996-08-12 | 2005-04-14 | Gong Gu | Vacuum deposited, non-polymeric flexible organic light emitting devices |
US7247073B2 (en) | 1996-08-12 | 2007-07-24 | The Trustees Of Princeton University | Vacuum deposited, non-polymeric flexible organic light emitting devices |
US20040027065A1 (en) * | 1996-08-12 | 2004-02-12 | Gong Gu | Vacuum deposited, non-polymeric flexible organic light emitting devices |
US6888306B2 (en) | 1996-08-12 | 2005-05-03 | The Trustees Of Princeton University | Vacuum deposited, non-polymeric flexible organic light emitting devices |
US20100104753A1 (en) * | 1997-11-17 | 2010-04-29 | Forrest Stephen R | Low pressure vapor phase deposition of organic thin films |
US6558736B2 (en) | 1997-11-17 | 2003-05-06 | The Trustees Of Princeton University | Low pressure vapor phase deposition of organic thin films |
US20070131172A1 (en) * | 1997-11-17 | 2007-06-14 | Forrest Stephen R | Low pressure vapor phase deposition of organic thin films |
US20040007178A1 (en) * | 1997-11-17 | 2004-01-15 | Forrest Stephen R. | Low pressure vapor phase deposition of organic thin films |
US20150114296A1 (en) * | 1997-11-17 | 2015-04-30 | The Trustees Of Princeton University | Low pressure vapor phase deposition of organic thin films |
US7279237B2 (en) | 1997-12-01 | 2007-10-09 | The Trustees Of Princeton University | OLEDs doped with phosphorescent compounds |
US20050008897A1 (en) * | 1997-12-01 | 2005-01-13 | Thompson Mark E. | OLEDs doped with phosphorescent compounds |
US7563519B2 (en) | 1997-12-01 | 2009-07-21 | The Trustees of Frinceton University | OLEDs doped with phosphorescent compounds |
US20090256476A1 (en) * | 1997-12-01 | 2009-10-15 | Thompson Mark E | Oleds doped with phosphorescent compounds |
US6872477B2 (en) | 1997-12-01 | 2005-03-29 | The Trustees Of Princeton University | OLEDs doped with phosphorescent compounds |
US7488542B2 (en) | 1997-12-01 | 2009-02-10 | The Trustees Of Princeton University | OLEDs doped with phosphorescent compounds |
US9508940B2 (en) | 1997-12-01 | 2016-11-29 | The Trustees Of Princeton University | OLEDs doped with phosphorescent compounds |
US20060286409A1 (en) * | 1997-12-01 | 2006-12-21 | Thompson Mark E | OLEDs doped with phosphorescent compounds |
US20080024058A1 (en) * | 1997-12-01 | 2008-01-31 | Thompson Mark E | OLEDs doped with phosphorescent compounds |
US20030203236A1 (en) * | 1997-12-01 | 2003-10-30 | Thompson Mark E. | OLEDs doped with phosphorescent compounds |
US20110147727A1 (en) * | 1997-12-01 | 2011-06-23 | Thompson Mark E | Oleds doped with phosphorescent compounds |
US20050158584A1 (en) * | 1997-12-01 | 2005-07-21 | Thompson Mark E. | OLEDs doped with phosphorescent compounds |
US20050214570A1 (en) * | 1997-12-01 | 2005-09-29 | Thompson Mark E | OLEDs doped with phosphorescent compounds |
US7901795B2 (en) | 1997-12-01 | 2011-03-08 | The Trustees Of Princeton University | OLEDs doped with phosphorescent compounds |
US7279235B2 (en) | 1997-12-01 | 2007-10-09 | The Trustees Of Princeton University | OLEDs doped with phosphorescent compounds |
US6902830B2 (en) | 1998-09-14 | 2005-06-07 | The Trustees Of Princeton University | Organometallic complexes as phosphorescent emitters in organic LEDs |
US6830828B2 (en) | 1998-09-14 | 2004-12-14 | The Trustees Of Princeton University | Organometallic complexes as phosphorescent emitters in organic LEDs |
US7291406B2 (en) | 1999-03-23 | 2007-11-06 | The Trustees Of Princeton University | Organometallic complexes as phosphorescent emitters in organic LEDS |
US20040262576A1 (en) * | 1999-03-23 | 2004-12-30 | Thompson Mark E. | Organometallic complexes as phosphorescent emitters in organic LEDs |
US20070296332A1 (en) * | 1999-03-23 | 2007-12-27 | Thompson Mark E | Organometallic complexes as phosphorescent emitters in organic LEDs |
US8574726B2 (en) | 1999-03-23 | 2013-11-05 | The Trustees Of Princeton University | Organometallic complexes as phosphorescent emitters in organic LEDs |
US8557402B2 (en) | 1999-03-23 | 2013-10-15 | The Trustees Of Princeton University | Organometallic complexes as phosphorescent emitters in organic LEDs |
US20090209760A1 (en) * | 1999-03-23 | 2009-08-20 | Thompson Mark E | Organometallic complexes as phosphorescent emitters in organic leds |
US7537844B2 (en) | 1999-03-23 | 2009-05-26 | The Trustees Of Princeton University | Organometallic complexes as phosphorescent emitters in organic leds |
US20110112296A1 (en) * | 1999-03-23 | 2011-05-12 | Thompson Mark E | Organometallic complexes as phosphorescent emitters in organic leds |
US10629827B2 (en) | 1999-03-23 | 2020-04-21 | The Trustees Of Princeton University | Organometallic complexes as phosphorescent emitters in organic LEDs |
US7001536B2 (en) | 1999-03-23 | 2006-02-21 | The Trustees Of Princeton University | Organometallic complexes as phosphorescent emitters in organic LEDs |
US7883787B2 (en) | 1999-03-23 | 2011-02-08 | The Trustees Of Princeton University | Organometallic complexes as phosphorescent emitters in organic LEDs |
US6489638B2 (en) * | 2000-06-23 | 2002-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20020179899A1 (en) * | 2001-05-29 | 2002-12-05 | Takahiro Nakayama | Electroluminescent film device |
US20030058198A1 (en) * | 2001-09-21 | 2003-03-27 | Lg Electronics Inc. | Electroluminescence panel display apparatus and driving method thereof |
US7129913B2 (en) * | 2001-09-21 | 2006-10-31 | Lg Electronics Inc. | Electroluminescence panel display apparatus and driving method thereof |
US7473575B2 (en) * | 2001-11-27 | 2009-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20090121626A1 (en) * | 2001-11-27 | 2009-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US7737437B2 (en) | 2001-11-27 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd | Light emitting device |
US8994017B2 (en) | 2001-11-27 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device containing iridium complex |
US20080143254A1 (en) * | 2001-11-27 | 2008-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US9263691B2 (en) | 2001-11-27 | 2016-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device containing iridium complex |
US8610109B2 (en) | 2001-11-27 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20100237342A1 (en) * | 2001-11-27 | 2010-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US7482626B2 (en) | 2001-11-27 | 2009-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20040124425A1 (en) * | 2001-11-27 | 2004-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US11217764B2 (en) | 2001-12-05 | 2022-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Organic semiconductor element |
US20060233682A1 (en) * | 2002-05-08 | 2006-10-19 | Cherian Kuruvilla A | Plasma-assisted engine exhaust treatment |
EP2752866A1 (en) | 2002-08-20 | 2014-07-09 | Global OLED Technology LLC | Color organic light emitting diode display with improved lifetime |
US10765307B2 (en) | 2003-04-01 | 2020-09-08 | Boston Scientific Scimed, Inc. | Endoscopic imaging system |
US11324395B2 (en) | 2003-04-01 | 2022-05-10 | Boston Scientific Scimed, Inc. | Endoscopic imaging system |
US9913573B2 (en) | 2003-04-01 | 2018-03-13 | Boston Scientific Scimed, Inc. | Endoscopic imaging system |
US20050112881A1 (en) * | 2003-07-22 | 2005-05-26 | Shiva Prakash | Process for removing an organic layer during fabrication of an organic electronic device and the organic electronic device formed by the process |
US7002292B2 (en) | 2003-07-22 | 2006-02-21 | E. I. Du Pont De Nemours And Company | Organic electronic device |
US20050017628A1 (en) * | 2003-07-22 | 2005-01-27 | Shiva Prakash | Organic electronic device |
US20050019977A1 (en) * | 2003-07-22 | 2005-01-27 | Shiva Prakash | Process for removing an organic layer during fabrication of an organic electronic device and the organic electronic device formed by the process |
US6953705B2 (en) | 2003-07-22 | 2005-10-11 | E. I. Du Pont De Nemours And Company | Process for removing an organic layer during fabrication of an organic electronic device |
US7235420B2 (en) | 2003-07-22 | 2007-06-26 | E. I. Du Pont De Nemours And Company | Process for removing an organic layer during fabrication of an organic electronic device and the organic electronic device formed by the process |
US8884845B2 (en) | 2003-10-28 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device and telecommunication system |
US20050088365A1 (en) * | 2003-10-28 | 2005-04-28 | Shunpei Yamazaki | Display device and telecommunication system |
US10602920B2 (en) | 2003-12-17 | 2020-03-31 | Boston Scientific Scimed, Inc. | Medical device with OLED illumination light source |
US20090012367A1 (en) * | 2003-12-17 | 2009-01-08 | Boston Scientific Scimed, Inc. | Medical device with oled illumination light source |
US9622682B2 (en) | 2003-12-17 | 2017-04-18 | Boston Scientific Scimed, Inc. | Medical device with OLED illumination light source |
US20070171525A1 (en) * | 2003-12-19 | 2007-07-26 | Miller Michael E | 3d stereo oled display |
US7221332B2 (en) | 2003-12-19 | 2007-05-22 | Eastman Kodak Company | 3D stereo OLED display |
US20050151152A1 (en) * | 2003-12-19 | 2005-07-14 | Eastman Kodak Company | 3D stereo OLED display |
WO2005112084A1 (en) * | 2004-05-18 | 2005-11-24 | Mecharonics Co., Ltd. | Method for forming organic light-emitting layer |
US20070190247A1 (en) * | 2004-05-18 | 2007-08-16 | Mecharonics Co., Ltd. | Method for forming organic light-emitting layer |
US20060121717A1 (en) * | 2004-12-02 | 2006-06-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bonding structure and fabrication thereof |
US20090039290A1 (en) * | 2004-12-30 | 2009-02-12 | E.I. Du Pont De Nemours And Company | Device patterning using irradiation |
US8350238B2 (en) | 2004-12-30 | 2013-01-08 | E.I. Du Pont De Nemours And Company | Device patterning using irradiation |
US20060263633A1 (en) * | 2005-04-27 | 2006-11-23 | Fuji Photo Film Co., Ltd. | Organic electroluminescent device |
US20070029941A1 (en) * | 2005-06-29 | 2007-02-08 | Naoyuki Ito | Organic electroluminescence display apparatus |
US8022387B2 (en) | 2005-09-30 | 2011-09-20 | Oki Data Corporation | Composite semiconductor device having a thyristor structure |
EP1770781A2 (en) | 2005-09-30 | 2007-04-04 | Oki Data Corporation | Composite semiconductor device, print head and image forming apparatus |
US20070075330A1 (en) * | 2005-09-30 | 2007-04-05 | Oki Data Corporation | Composite semiconductor device, print head and image forming apparatus |
EP1770781A3 (en) * | 2005-09-30 | 2011-11-23 | Oki Data Corporation | Composite semiconductor device, print head and image forming apparatus |
US8152718B2 (en) | 2006-02-07 | 2012-04-10 | Boston Scientific Scimed, Inc. | Medical device light source |
US20070185386A1 (en) * | 2006-02-07 | 2007-08-09 | Eric Cheng | Medical device light source |
US9820638B2 (en) | 2006-02-07 | 2017-11-21 | Boston Scientific Scimed, Inc. | Medical device light source |
US20080149948A1 (en) * | 2006-12-05 | 2008-06-26 | Nano Terra Inc. | Edge-Emitting Light-Emitting Diode Arrays and Methods of Making and Using the Same |
US7935972B2 (en) * | 2007-03-09 | 2011-05-03 | Ivoclar Vivadent Ag | Light emission device |
US8980658B2 (en) | 2008-02-18 | 2015-03-17 | Hiroshima University | Light-emitting element |
US8368046B2 (en) | 2008-02-18 | 2013-02-05 | Hiroshima University | Light-emitting element |
US20090206323A1 (en) * | 2008-02-18 | 2009-08-20 | Shin Yokoyama | Light-emitting element and method for manufacturing the same |
US8330141B2 (en) * | 2008-03-26 | 2012-12-11 | Hiroshima University | Light-emitting device |
US20110121366A1 (en) * | 2009-04-14 | 2011-05-26 | NuPGA Corporation | System comprising a semiconductor device and structure |
US8362482B2 (en) | 2009-04-14 | 2013-01-29 | Monolithic 3D Inc. | Semiconductor device and structure |
US8384426B2 (en) | 2009-04-14 | 2013-02-26 | Monolithic 3D Inc. | Semiconductor device and structure |
US8754533B2 (en) | 2009-04-14 | 2014-06-17 | Monolithic 3D Inc. | Monolithic three-dimensional semiconductor device and structure |
US8405420B2 (en) | 2009-04-14 | 2013-03-26 | Monolithic 3D Inc. | System comprising a semiconductor device and structure |
US8427200B2 (en) | 2009-04-14 | 2013-04-23 | Monolithic 3D Inc. | 3D semiconductor device |
US8987079B2 (en) | 2009-04-14 | 2015-03-24 | Monolithic 3D Inc. | Method for developing a custom device |
US8378715B2 (en) | 2009-04-14 | 2013-02-19 | Monolithic 3D Inc. | Method to construct systems |
US9412645B1 (en) | 2009-04-14 | 2016-08-09 | Monolithic 3D Inc. | Semiconductor devices and structures |
US9509313B2 (en) | 2009-04-14 | 2016-11-29 | Monolithic 3D Inc. | 3D semiconductor device |
US8378494B2 (en) | 2009-04-14 | 2013-02-19 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8669778B1 (en) | 2009-04-14 | 2014-03-11 | Monolithic 3D Inc. | Method for design and manufacturing of a 3D semiconductor device |
US9711407B2 (en) | 2009-04-14 | 2017-07-18 | Monolithic 3D Inc. | Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer |
US20110092030A1 (en) * | 2009-04-14 | 2011-04-21 | NuPGA Corporation | System comprising a semiconductor device and structure |
US8373439B2 (en) | 2009-04-14 | 2013-02-12 | Monolithic 3D Inc. | 3D semiconductor device |
US9577642B2 (en) | 2009-04-14 | 2017-02-21 | Monolithic 3D Inc. | Method to form a 3D semiconductor device |
US20110049577A1 (en) * | 2009-04-14 | 2011-03-03 | NuPGA Corporation | System comprising a semiconductor device and structure |
US20110031997A1 (en) * | 2009-04-14 | 2011-02-10 | NuPGA Corporation | Method for fabrication of a semiconductor device and structure |
US9406670B1 (en) | 2009-10-12 | 2016-08-02 | Monolithic 3D Inc. | System comprising a semiconductor device and structure |
US8294159B2 (en) | 2009-10-12 | 2012-10-23 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8664042B2 (en) | 2009-10-12 | 2014-03-04 | Monolithic 3D Inc. | Method for fabrication of configurable systems |
US10388863B2 (en) | 2009-10-12 | 2019-08-20 | Monolithic 3D Inc. | 3D memory device and structure |
US10043781B2 (en) | 2009-10-12 | 2018-08-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10157909B2 (en) | 2009-10-12 | 2018-12-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US8237228B2 (en) | 2009-10-12 | 2012-08-07 | Monolithic 3D Inc. | System comprising a semiconductor device and structure |
US10354995B2 (en) | 2009-10-12 | 2019-07-16 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US20110084314A1 (en) * | 2009-10-12 | 2011-04-14 | NuPGA Corporation | System comprising a semiconductor device and structure |
US10910364B2 (en) | 2009-10-12 | 2021-02-02 | Monolitaic 3D Inc. | 3D semiconductor device |
US10366970B2 (en) | 2009-10-12 | 2019-07-30 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US8395191B2 (en) | 2009-10-12 | 2013-03-12 | Monolithic 3D Inc. | Semiconductor device and structure |
US11018133B2 (en) | 2009-10-12 | 2021-05-25 | Monolithic 3D Inc. | 3D integrated circuit |
US11374118B2 (en) | 2009-10-12 | 2022-06-28 | Monolithic 3D Inc. | Method to form a 3D integrated circuit |
US8907442B2 (en) | 2009-10-12 | 2014-12-09 | Monolthic 3D Inc. | System comprising a semiconductor device and structure |
US9564432B2 (en) | 2010-02-16 | 2017-02-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US8846463B1 (en) | 2010-02-16 | 2014-09-30 | Monolithic 3D Inc. | Method to construct a 3D semiconductor device |
US9099526B2 (en) | 2010-02-16 | 2015-08-04 | Monolithic 3D Inc. | Integrated circuit device and structure |
US8492886B2 (en) | 2010-02-16 | 2013-07-23 | Monolithic 3D Inc | 3D integrated circuit with logic |
US8642416B2 (en) | 2010-07-30 | 2014-02-04 | Monolithic 3D Inc. | Method of forming three dimensional integrated circuit devices using layer transfer technique |
US8709880B2 (en) | 2010-07-30 | 2014-04-29 | Monolithic 3D Inc | Method for fabrication of a semiconductor device and structure |
US8912052B2 (en) | 2010-07-30 | 2014-12-16 | Monolithic 3D Inc. | Semiconductor device and structure |
US8258810B2 (en) | 2010-09-30 | 2012-09-04 | Monolithic 3D Inc. | 3D semiconductor device |
US8703597B1 (en) | 2010-09-30 | 2014-04-22 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8461035B1 (en) | 2010-09-30 | 2013-06-11 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US9419031B1 (en) | 2010-10-07 | 2016-08-16 | Monolithic 3D Inc. | Semiconductor and optoelectronic devices |
US8440542B2 (en) | 2010-10-11 | 2013-05-14 | Monolithic 3D Inc. | Semiconductor device and structure |
US8203148B2 (en) | 2010-10-11 | 2012-06-19 | Monolithic 3D Inc. | Semiconductor device and structure |
US8956959B2 (en) | 2010-10-11 | 2015-02-17 | Monolithic 3D Inc. | Method of manufacturing a semiconductor device with two monocrystalline layers |
US11257867B1 (en) | 2010-10-11 | 2022-02-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with oxide bonds |
US11315980B1 (en) | 2010-10-11 | 2022-04-26 | Monolithic 3D Inc. | 3D semiconductor device and structure with transistors |
US10290682B2 (en) | 2010-10-11 | 2019-05-14 | Monolithic 3D Inc. | 3D IC semiconductor device and structure with stacked memory |
US11158674B2 (en) | 2010-10-11 | 2021-10-26 | Monolithic 3D Inc. | Method to produce a 3D semiconductor device and structure |
US11227897B2 (en) | 2010-10-11 | 2022-01-18 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
US9818800B2 (en) | 2010-10-11 | 2017-11-14 | Monolithic 3D Inc. | Self aligned semiconductor device and structure |
US11024673B1 (en) | 2010-10-11 | 2021-06-01 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11018191B1 (en) | 2010-10-11 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11469271B2 (en) | 2010-10-11 | 2022-10-11 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
US10896931B1 (en) | 2010-10-11 | 2021-01-19 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11600667B1 (en) | 2010-10-11 | 2023-03-07 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
US11163112B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
US11043523B1 (en) | 2010-10-13 | 2021-06-22 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US8283215B2 (en) | 2010-10-13 | 2012-10-09 | Monolithic 3D Inc. | Semiconductor and optoelectronic devices |
US10978501B1 (en) | 2010-10-13 | 2021-04-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
US11929372B2 (en) | 2010-10-13 | 2024-03-12 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US10998374B1 (en) | 2010-10-13 | 2021-05-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US8823122B2 (en) | 2010-10-13 | 2014-09-02 | Monolithic 3D Inc. | Semiconductor and optoelectronic devices |
US10833108B2 (en) | 2010-10-13 | 2020-11-10 | Monolithic 3D Inc. | 3D microdisplay device and structure |
US10679977B2 (en) | 2010-10-13 | 2020-06-09 | Monolithic 3D Inc. | 3D microdisplay device and structure |
US8362800B2 (en) | 2010-10-13 | 2013-01-29 | Monolithic 3D Inc. | 3D semiconductor device including field repairable logics |
US8373230B1 (en) | 2010-10-13 | 2013-02-12 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US11605663B2 (en) | 2010-10-13 | 2023-03-14 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11063071B1 (en) | 2010-10-13 | 2021-07-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
US11694922B2 (en) | 2010-10-13 | 2023-07-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11133344B2 (en) | 2010-10-13 | 2021-09-28 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US8379458B1 (en) | 2010-10-13 | 2013-02-19 | Monolithic 3D Inc. | Semiconductor device and structure |
US10943934B2 (en) | 2010-10-13 | 2021-03-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US11437368B2 (en) | 2010-10-13 | 2022-09-06 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11404466B2 (en) | 2010-10-13 | 2022-08-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US11374042B1 (en) | 2010-10-13 | 2022-06-28 | Monolithic 3D Inc. | 3D micro display semiconductor device and structure |
US11164898B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US11869915B2 (en) | 2010-10-13 | 2024-01-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US8753913B2 (en) | 2010-10-13 | 2014-06-17 | Monolithic 3D Inc. | Method for fabricating novel semiconductor and optoelectronic devices |
US8163581B1 (en) | 2010-10-13 | 2012-04-24 | Monolith IC 3D | Semiconductor and optoelectronic devices |
US11855114B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11855100B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US8476145B2 (en) | 2010-10-13 | 2013-07-02 | Monolithic 3D Inc. | Method of fabricating a semiconductor device and structure |
US11327227B2 (en) | 2010-10-13 | 2022-05-10 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
US10497713B2 (en) | 2010-11-18 | 2019-12-03 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11923230B1 (en) | 2010-11-18 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11355380B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | Methods for producing 3D semiconductor memory device and structure utilizing alignment marks |
US11355381B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US8273610B2 (en) | 2010-11-18 | 2012-09-25 | Monolithic 3D Inc. | Method of constructing a semiconductor device and structure |
US11862503B2 (en) | 2010-11-18 | 2024-01-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11610802B2 (en) | 2010-11-18 | 2023-03-21 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes |
US11784082B2 (en) | 2010-11-18 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11854857B1 (en) | 2010-11-18 | 2023-12-26 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11164770B1 (en) | 2010-11-18 | 2021-11-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
US11804396B2 (en) | 2010-11-18 | 2023-10-31 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11107721B2 (en) | 2010-11-18 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with NAND logic |
US11901210B2 (en) | 2010-11-18 | 2024-02-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11443971B2 (en) | 2010-11-18 | 2022-09-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11569117B2 (en) | 2010-11-18 | 2023-01-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
US11508605B2 (en) | 2010-11-18 | 2022-11-22 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11735462B2 (en) | 2010-11-18 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
US11121021B2 (en) | 2010-11-18 | 2021-09-14 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11211279B2 (en) | 2010-11-18 | 2021-12-28 | Monolithic 3D Inc. | Method for processing a 3D integrated circuit and structure |
US11615977B2 (en) | 2010-11-18 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11031275B2 (en) | 2010-11-18 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11004719B1 (en) | 2010-11-18 | 2021-05-11 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11482438B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11482439B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors |
US9136153B2 (en) | 2010-11-18 | 2015-09-15 | Monolithic 3D Inc. | 3D semiconductor device and structure with back-bias |
US11094576B1 (en) | 2010-11-18 | 2021-08-17 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11495484B2 (en) | 2010-11-18 | 2022-11-08 | Monolithic 3D Inc. | 3D semiconductor devices and structures with at least two single-crystal layers |
US11018042B1 (en) | 2010-11-18 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11521888B2 (en) | 2010-11-18 | 2022-12-06 | Monolithic 3D Inc. | 3D semiconductor device and structure with high-k metal gate transistors |
US8536023B2 (en) | 2010-11-22 | 2013-09-17 | Monolithic 3D Inc. | Method of manufacturing a semiconductor device and structure |
US8541819B1 (en) | 2010-12-09 | 2013-09-24 | Monolithic 3D Inc. | Semiconductor device and structure |
US11482440B2 (en) | 2010-12-16 | 2022-10-25 | Monolithic 3D Inc. | 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits |
US8298875B1 (en) | 2011-03-06 | 2012-10-30 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8901613B2 (en) | 2011-03-06 | 2014-12-02 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
US8450804B2 (en) | 2011-03-06 | 2013-05-28 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
US8975670B2 (en) | 2011-03-06 | 2015-03-10 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
US8581349B1 (en) | 2011-05-02 | 2013-11-12 | Monolithic 3D Inc. | 3D memory semiconductor device and structure |
US9360202B2 (en) | 2011-05-13 | 2016-06-07 | Lighting Science Group Corporation | System for actively cooling an LED filament and associated methods |
US9953925B2 (en) | 2011-06-28 | 2018-04-24 | Monolithic 3D Inc. | Semiconductor system and device |
US10388568B2 (en) | 2011-06-28 | 2019-08-20 | Monolithic 3D Inc. | 3D semiconductor device and system |
US10217667B2 (en) | 2011-06-28 | 2019-02-26 | Monolithic 3D Inc. | 3D semiconductor device, fabrication method and system |
US9219005B2 (en) | 2011-06-28 | 2015-12-22 | Monolithic 3D Inc. | Semiconductor system and device |
US8687399B2 (en) | 2011-10-02 | 2014-04-01 | Monolithic 3D Inc. | Semiconductor device and structure |
US9030858B2 (en) | 2011-10-02 | 2015-05-12 | Monolithic 3D Inc. | Semiconductor device and structure |
US9197804B1 (en) | 2011-10-14 | 2015-11-24 | Monolithic 3D Inc. | Semiconductor and optoelectronic devices |
US9029173B2 (en) | 2011-10-18 | 2015-05-12 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US9000557B2 (en) | 2012-03-17 | 2015-04-07 | Zvi Or-Bach | Semiconductor device and structure |
US10600888B2 (en) | 2012-04-09 | 2020-03-24 | Monolithic 3D Inc. | 3D semiconductor device |
US8557632B1 (en) | 2012-04-09 | 2013-10-15 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US11694944B1 (en) | 2012-04-09 | 2023-07-04 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US8836073B1 (en) | 2012-04-09 | 2014-09-16 | Monolithic 3D Inc. | Semiconductor device and structure |
US11735501B1 (en) | 2012-04-09 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11476181B1 (en) | 2012-04-09 | 2022-10-18 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US9305867B1 (en) | 2012-04-09 | 2016-04-05 | Monolithic 3D Inc. | Semiconductor devices and structures |
US11881443B2 (en) | 2012-04-09 | 2024-01-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11594473B2 (en) | 2012-04-09 | 2023-02-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11410912B2 (en) | 2012-04-09 | 2022-08-09 | Monolithic 3D Inc. | 3D semiconductor device with vias and isolation layers |
US11164811B2 (en) | 2012-04-09 | 2021-11-02 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers and oxide-to-oxide bonding |
US11616004B1 (en) | 2012-04-09 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11088050B2 (en) | 2012-04-09 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers |
US9099424B1 (en) | 2012-08-10 | 2015-08-04 | Monolithic 3D Inc. | Semiconductor system, device and structure with heat removal |
US8574929B1 (en) | 2012-11-16 | 2013-11-05 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US8686428B1 (en) | 2012-11-16 | 2014-04-01 | Monolithic 3D Inc. | Semiconductor device and structure |
US8742476B1 (en) | 2012-11-27 | 2014-06-03 | Monolithic 3D Inc. | Semiconductor device and structure |
US9252134B2 (en) | 2012-12-22 | 2016-02-02 | Monolithic 3D Inc. | Semiconductor device and structure |
US11967583B2 (en) | 2012-12-22 | 2024-04-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11018116B2 (en) | 2012-12-22 | 2021-05-25 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11961827B1 (en) | 2012-12-22 | 2024-04-16 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11784169B2 (en) | 2012-12-22 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US8674470B1 (en) | 2012-12-22 | 2014-03-18 | Monolithic 3D Inc. | Semiconductor device and structure |
US11309292B2 (en) | 2012-12-22 | 2022-04-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11916045B2 (en) | 2012-12-22 | 2024-02-27 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11063024B1 (en) | 2012-12-22 | 2021-07-13 | Monlithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11217565B2 (en) | 2012-12-22 | 2022-01-04 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US8921970B1 (en) | 2012-12-22 | 2014-12-30 | Monolithic 3D Inc | Semiconductor device and structure |
US9911627B1 (en) | 2012-12-29 | 2018-03-06 | Monolithic 3D Inc. | Method of processing a semiconductor device |
US9460978B1 (en) | 2012-12-29 | 2016-10-04 | Monolithic 3D Inc. | Semiconductor device and structure |
US10903089B1 (en) | 2012-12-29 | 2021-01-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10892169B2 (en) | 2012-12-29 | 2021-01-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11004694B1 (en) | 2012-12-29 | 2021-05-11 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US9460991B1 (en) | 2012-12-29 | 2016-10-04 | Monolithic 3D Inc. | Semiconductor device and structure |
US11430668B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11430667B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11087995B1 (en) | 2012-12-29 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US9871034B1 (en) | 2012-12-29 | 2018-01-16 | Monolithic 3D Inc. | Semiconductor device and structure |
US10600657B2 (en) | 2012-12-29 | 2020-03-24 | Monolithic 3D Inc | 3D semiconductor device and structure |
US10651054B2 (en) | 2012-12-29 | 2020-05-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US8803206B1 (en) | 2012-12-29 | 2014-08-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10115663B2 (en) | 2012-12-29 | 2018-10-30 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US9385058B1 (en) | 2012-12-29 | 2016-07-05 | Monolithic 3D Inc. | Semiconductor device and structure |
US11177140B2 (en) | 2012-12-29 | 2021-11-16 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US9863588B2 (en) | 2013-01-11 | 2018-01-09 | Lighting Science Group Corporation | Serially-connected light emitting diodes, methods of forming same, and luminaires containing same |
US20140197746A1 (en) * | 2013-01-11 | 2014-07-17 | Lighting Science Group Corporation | Serially-connected light emitting diodes, methods of forming same, and luminaires containing same |
US8835945B2 (en) * | 2013-01-11 | 2014-09-16 | Lighting Science Group Corporation | Serially-connected light emitting diodes, methods of forming same, and luminaires containing same |
US11004967B1 (en) | 2013-03-11 | 2021-05-11 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11869965B2 (en) | 2013-03-11 | 2024-01-09 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
US11935949B1 (en) | 2013-03-11 | 2024-03-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
US8902663B1 (en) | 2013-03-11 | 2014-12-02 | Monolithic 3D Inc. | Method of maintaining a memory state |
US11515413B2 (en) | 2013-03-11 | 2022-11-29 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11121246B2 (en) | 2013-03-11 | 2021-09-14 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US10964807B2 (en) | 2013-03-11 | 2021-03-30 | Monolithic 3D Inc. | 3D semiconductor device with memory |
US10355121B2 (en) | 2013-03-11 | 2019-07-16 | Monolithic 3D Inc. | 3D semiconductor device with stacked memory |
US10325651B2 (en) | 2013-03-11 | 2019-06-18 | Monolithic 3D Inc. | 3D semiconductor device with stacked memory |
US9496271B2 (en) | 2013-03-11 | 2016-11-15 | Monolithic 3D Inc. | 3DIC system with a two stable state memory and back-bias region |
US11923374B2 (en) | 2013-03-12 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11398569B2 (en) | 2013-03-12 | 2022-07-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US8994404B1 (en) | 2013-03-12 | 2015-03-31 | Monolithic 3D Inc. | Semiconductor device and structure |
US9117749B1 (en) | 2013-03-15 | 2015-08-25 | Monolithic 3D Inc. | Semiconductor device and structure |
US10224279B2 (en) | 2013-03-15 | 2019-03-05 | Monolithic 3D Inc. | Semiconductor device and structure |
US11270055B1 (en) | 2013-04-15 | 2022-03-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11487928B2 (en) | 2013-04-15 | 2022-11-01 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11030371B2 (en) | 2013-04-15 | 2021-06-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11341309B1 (en) | 2013-04-15 | 2022-05-24 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11720736B2 (en) | 2013-04-15 | 2023-08-08 | Monolithic 3D Inc. | Automation methods for 3D integrated circuits and devices |
US11574109B1 (en) | 2013-04-15 | 2023-02-07 | Monolithic 3D Inc | Automation methods for 3D integrated circuits and devices |
US10127344B2 (en) | 2013-04-15 | 2018-11-13 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US9899598B2 (en) * | 2013-05-01 | 2018-02-20 | Konica Minolta, Inc. | Organic electroluminescent element |
US20160072069A1 (en) * | 2013-05-01 | 2016-03-10 | Konica Minolta, Inc. | Organic electroluminescent element |
US11031394B1 (en) | 2014-01-28 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11107808B1 (en) | 2014-01-28 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11088130B2 (en) | 2014-01-28 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US9590203B2 (en) * | 2014-06-17 | 2017-03-07 | Samsung Display Co., Ltd. | Organic light-emitting device |
US10840239B2 (en) | 2014-08-26 | 2020-11-17 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10297586B2 (en) | 2015-03-09 | 2019-05-21 | Monolithic 3D Inc. | Methods for processing a 3D semiconductor device |
US11056468B1 (en) | 2015-04-19 | 2021-07-06 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10381328B2 (en) | 2015-04-19 | 2019-08-13 | Monolithic 3D Inc. | Semiconductor device and structure |
US11011507B1 (en) | 2015-04-19 | 2021-05-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10825779B2 (en) | 2015-04-19 | 2020-11-03 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11956952B2 (en) | 2015-08-23 | 2024-04-09 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US10515981B2 (en) | 2015-09-21 | 2019-12-24 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with memory |
US10522225B1 (en) | 2015-10-02 | 2019-12-31 | Monolithic 3D Inc. | Semiconductor device with non-volatile memory |
US10418369B2 (en) | 2015-10-24 | 2019-09-17 | Monolithic 3D Inc. | Multi-level semiconductor memory device and structure |
US10847540B2 (en) | 2015-10-24 | 2020-11-24 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11114464B2 (en) | 2015-10-24 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11296115B1 (en) | 2015-10-24 | 2022-04-05 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11114427B2 (en) | 2015-11-07 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor processor and memory device and structure |
US11937422B2 (en) | 2015-11-07 | 2024-03-19 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US10490754B2 (en) * | 2015-12-21 | 2019-11-26 | Udc Ireland Limited | Transition metal complexes with tripodal ligands and the use thereof in OLEDs |
US20170194576A1 (en) * | 2015-12-21 | 2017-07-06 | Udc Ireland Limited | Transition Metal Complexes with Tripodal Ligands and the Use Thereof in OLEDs |
US11869591B2 (en) | 2016-10-10 | 2024-01-09 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
US11711928B2 (en) | 2016-10-10 | 2023-07-25 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
US11251149B2 (en) | 2016-10-10 | 2022-02-15 | Monolithic 3D Inc. | 3D memory device and structure |
US11812620B2 (en) | 2016-10-10 | 2023-11-07 | Monolithic 3D Inc. | 3D DRAM memory devices and structures with control circuits |
US11930648B1 (en) | 2016-10-10 | 2024-03-12 | Monolithic 3D Inc. | 3D memory devices and structures with metal layers |
US11329059B1 (en) | 2016-10-10 | 2022-05-10 | Monolithic 3D Inc. | 3D memory devices and structures with thinned single crystal substrates |
US11302898B2 (en) | 2017-08-25 | 2022-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Display panel having multiple common electrodes |
US11805674B2 (en) | 2017-08-25 | 2023-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Display panel and display device including partition wall |
US11935912B2 (en) | 2017-11-27 | 2024-03-19 | Seoul Viosys Co., Ltd. | Light emitting device having commonly connected LED sub-units |
CN111602259A (en) * | 2017-12-22 | 2020-08-28 | 诺瓦尔德股份有限公司 | Electronic device and method for manufacturing the same |
US11296106B2 (en) | 2019-04-08 | 2022-04-05 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11018156B2 (en) | 2019-04-08 | 2021-05-25 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11763864B2 (en) | 2019-04-08 | 2023-09-19 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures with bit-line pillars |
US11158652B1 (en) | 2019-04-08 | 2021-10-26 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US10892016B1 (en) | 2019-04-08 | 2021-01-12 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
Also Published As
Publication number | Publication date |
---|---|
AU3805297A (en) | 1998-02-25 |
EP0947122A4 (en) | 2001-10-08 |
WO1998006242A1 (en) | 1998-02-12 |
EP0947122A1 (en) | 1999-10-06 |
JP2000516273A (en) | 2000-12-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6358631B1 (en) | Mixed vapor deposited films for electroluminescent devices | |
US5721160A (en) | Multicolor organic light emitting devices | |
US7714504B2 (en) | Multicolor organic electroluminescent device formed of vertically stacked light emitting devices | |
US6548956B2 (en) | Transparent contacts for organic devices | |
CA2248283C (en) | Transparent contacts for organic devices | |
MXPA97004442A (en) | Organic devices emitters of light of colorsmultip |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: TRUSTEES OF PRINCETON UNIVERSITY, THE, NEW JERSEY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FORREST, STEPHEN R.;THOMPSON, MARK EDWARD;BURROWS, PAUL EDWARD;AND OTHERS;REEL/FRAME:008385/0928;SIGNING DATES FROM 19960809 TO 19960918 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
AS | Assignment |
Owner name: UNITED STATES OF AMERICA AS REPRESENTED BY THE SEC Free format text: CONFIRMATORY LICENSE;ASSIGNOR:PRINCETON UNIVERSITY;REEL/FRAME:016948/0826 Effective date: 20050429 |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 12 |