US6163049A - Method of forming a composite interpoly gate dielectric - Google Patents
Method of forming a composite interpoly gate dielectric Download PDFInfo
- Publication number
- US6163049A US6163049A US09/170,061 US17006198A US6163049A US 6163049 A US6163049 A US 6163049A US 17006198 A US17006198 A US 17006198A US 6163049 A US6163049 A US 6163049A
- Authority
- US
- United States
- Prior art keywords
- oxide
- thickness
- layer
- oxide layer
- floating gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 238000013461 design Methods 0.000 claims abstract description 27
- 230000014759 maintenance of location Effects 0.000 claims abstract description 17
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 8
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910001936 tantalum oxide Inorganic materials 0.000 claims abstract description 8
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 abstract description 16
- 238000004140 cleaning Methods 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 10
- 230000002411 adverse Effects 0.000 abstract description 7
- 230000008021 deposition Effects 0.000 abstract description 6
- 230000008859 change Effects 0.000 abstract description 2
- 230000015654 memory Effects 0.000 description 10
- 229960001866 silicon dioxide Drugs 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- -1 structures Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
Abstract
Description
Claims (5)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/170,061 US6163049A (en) | 1998-10-13 | 1998-10-13 | Method of forming a composite interpoly gate dielectric |
US09/725,843 US6413820B2 (en) | 1998-10-13 | 2000-11-30 | Method of forming a composite interpoly gate dielectric |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/170,061 US6163049A (en) | 1998-10-13 | 1998-10-13 | Method of forming a composite interpoly gate dielectric |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/725,843 Division US6413820B2 (en) | 1998-10-13 | 2000-11-30 | Method of forming a composite interpoly gate dielectric |
Publications (1)
Publication Number | Publication Date |
---|---|
US6163049A true US6163049A (en) | 2000-12-19 |
Family
ID=22618392
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/170,061 Expired - Lifetime US6163049A (en) | 1998-10-13 | 1998-10-13 | Method of forming a composite interpoly gate dielectric |
US09/725,843 Expired - Lifetime US6413820B2 (en) | 1998-10-13 | 2000-11-30 | Method of forming a composite interpoly gate dielectric |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/725,843 Expired - Lifetime US6413820B2 (en) | 1998-10-13 | 2000-11-30 | Method of forming a composite interpoly gate dielectric |
Country Status (1)
Country | Link |
---|---|
US (2) | US6163049A (en) |
Cited By (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020098648A1 (en) * | 1999-06-10 | 2002-07-25 | Christoph Ludwig | Method for fabricating a nonvolatile semiconductor memory cell |
US20020113268A1 (en) * | 2000-02-01 | 2002-08-22 | Jun Koyama | Nonvolatile memory, semiconductor device and method of manufacturing the same |
US20020137288A1 (en) * | 2001-03-19 | 2002-09-26 | Kazumasa Nomoto | Non-volatile semiconductor memory device and process for fabricating the same |
US20030042528A1 (en) * | 2001-08-30 | 2003-03-06 | Leonard Forbes | Sram cells with repressed floating gate memory, low tunnel barrier interpoly insulators |
US20030042534A1 (en) * | 2001-08-30 | 2003-03-06 | Micron Technology, Inc. | Scalable flash/NV structures and devices with extended endurance |
US20030048666A1 (en) * | 2001-08-30 | 2003-03-13 | Micron Technology, Inc. | Graded composition metal oxide tunnel barrier interpoly insulators |
US6559014B1 (en) | 2001-10-15 | 2003-05-06 | Advanced Micro Devices, Inc. | Preparation of composite high-K / standard-K dielectrics for semiconductor devices |
US6562491B1 (en) | 2001-10-15 | 2003-05-13 | Advanced Micro Devices, Inc. | Preparation of composite high-K dielectrics |
EP1324393A1 (en) * | 2001-12-28 | 2003-07-02 | STMicroelectronics S.r.l. | Manufacturing process of a semiconductor non-volatile memory cell and corresponding memory-cell |
US6617639B1 (en) | 2002-06-21 | 2003-09-09 | Advanced Micro Devices, Inc. | Use of high-K dielectric material for ONO and tunnel oxide to improve floating gate flash memory coupling |
US6640331B2 (en) * | 2001-11-29 | 2003-10-28 | Sun Microsystems, Inc. | Decoupling capacitor assignment technique with respect to leakage power |
US20030201491A1 (en) * | 1998-12-17 | 2003-10-30 | Samsung Electronics Co., Ltd. | Semiconductor device containing oxide/nitride/oxide dielectric layer and method of forming the same |
US6642573B1 (en) | 2002-03-13 | 2003-11-04 | Advanced Micro Devices, Inc. | Use of high-K dielectric material in modified ONO structure for semiconductor devices |
US6677640B1 (en) * | 2000-03-01 | 2004-01-13 | Micron Technology, Inc. | Memory cell with tight coupling |
US6693004B1 (en) | 2002-02-27 | 2004-02-17 | Advanced Micro Devices, Inc. | Interfacial barrier layer in semiconductor devices with high-K gate dielectric material |
US6693321B1 (en) | 2002-05-15 | 2004-02-17 | Advanced Micro Devices, Inc. | Replacing layers of an intergate dielectric layer with high-K material for improved scalability |
US6754108B2 (en) | 2001-08-30 | 2004-06-22 | Micron Technology, Inc. | DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators |
US20040168145A1 (en) * | 2001-08-30 | 2004-08-26 | Micron Technology, Inc. | Service programmable logic arrays with low tunnel barrier interpoly insulators |
US6790755B2 (en) | 2001-12-27 | 2004-09-14 | Advanced Micro Devices, Inc. | Preparation of stack high-K gate dielectrics with nitrided layer |
US20050012141A1 (en) * | 2002-02-12 | 2005-01-20 | Micron Technology, Inc. | Asymmetric band-gap engineered nonvolatile memory device |
US20050023595A1 (en) * | 2001-08-30 | 2005-02-03 | Micron Technology, Inc. | Programmable array logic or memory devices with asymmetrical tunnel barriers |
US20050128816A1 (en) * | 2001-06-28 | 2005-06-16 | Chang-Hyun Lee | Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers |
US20060002192A1 (en) * | 2001-08-30 | 2006-01-05 | Micron Technology | Integrated circuit memory device and method |
US20060109713A1 (en) * | 2004-11-22 | 2006-05-25 | United Microelectronics Corp. | Memory Device |
US7068544B2 (en) | 2001-08-30 | 2006-06-27 | Micron Technology, Inc. | Flash memory with low tunnel barrier interpoly insulators |
US7075829B2 (en) | 2001-08-30 | 2006-07-11 | Micron Technology, Inc. | Programmable memory address and decode circuits with low tunnel barrier interpoly insulators |
US20060180851A1 (en) * | 2001-06-28 | 2006-08-17 | Samsung Electronics Co., Ltd. | Non-volatile memory devices and methods of operating the same |
US20060216888A1 (en) * | 2005-03-23 | 2006-09-28 | Wei Zheng | High K stack for non-volatile memory |
US7126183B2 (en) | 2001-08-30 | 2006-10-24 | Micron Technology, Inc. | Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers |
US20070029601A1 (en) * | 2005-08-04 | 2007-02-08 | Orimoto Takashi W | SONOS memory cell having high-K dielectric |
US20070063265A1 (en) * | 2001-06-28 | 2007-03-22 | Sung-Hae Lee | Non-volatile semiconductor memory devices and methods of fabricating the same |
US7294547B1 (en) | 2005-05-13 | 2007-11-13 | Advanced Micro Devices, Inc. | SONOS memory cell having a graded high-K dielectric |
US20080001212A1 (en) * | 2001-06-28 | 2008-01-03 | Samsung Electronics Co., Ltd. | Non-volatile semiconductor memory devices |
US7365389B1 (en) | 2004-12-10 | 2008-04-29 | Spansion Llc | Memory cell having enhanced high-K dielectric |
US7465983B2 (en) | 2001-08-30 | 2008-12-16 | Micron Technology, Inc. | Low tunnel barrier insulators |
US20090020802A1 (en) * | 2007-07-16 | 2009-01-22 | Yi Ma | Integrated scheme for forming inter-poly dielectrics for non-volatile memory devices |
US20090020805A1 (en) * | 2007-07-16 | 2009-01-22 | Samsung Electronics Co., Ltd. | Non-volatile memory devices and methods of forming the same |
US7728626B2 (en) | 2002-07-08 | 2010-06-01 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US7863128B1 (en) | 2005-02-04 | 2011-01-04 | Spansion Llc | Non-volatile memory device with improved erase speed |
US8110469B2 (en) | 2005-08-30 | 2012-02-07 | Micron Technology, Inc. | Graded dielectric layers |
US8253183B2 (en) | 2001-06-28 | 2012-08-28 | Samsung Electronics Co., Ltd. | Charge trapping nonvolatile memory devices with a high-K blocking insulation layer |
US8501563B2 (en) | 2005-07-20 | 2013-08-06 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US8691647B1 (en) | 2002-10-07 | 2014-04-08 | Spansion Llc | Memory devices containing a high-K dielectric layer |
US11172576B2 (en) * | 2013-11-27 | 2021-11-09 | At&S Austria Technologie & Systemtechnik Aktiengesellschaft | Method for producing a printed circuit board structure |
US11523520B2 (en) | 2014-02-27 | 2022-12-06 | At&S Austria Technologie & Systemtechnik Aktiengesellschaft | Method for making contact with a component embedded in a printed circuit board |
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KR100415538B1 (en) * | 2001-09-14 | 2004-01-24 | 주식회사 하이닉스반도체 | Capacitor with double dielectric layer and method for fabricating the same |
US6957119B2 (en) * | 2002-09-09 | 2005-10-18 | Macronix International Co., Ltd. | Method for monitoring matched machine overlay |
US6777764B2 (en) * | 2002-09-10 | 2004-08-17 | Macronix International Co., Ltd. | ONO interpoly dielectric for flash memory cells and method for fabricating the same using a single wafer low temperature deposition process |
TW200518869A (en) * | 2003-10-06 | 2005-06-16 | Shinko Electric Ind Co | Method for forming via-hole in resin layer |
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KR100579844B1 (en) * | 2003-11-05 | 2006-05-12 | 동부일렉트로닉스 주식회사 | Non volatile memory and fabrication method thereof |
JP4921837B2 (en) * | 2006-04-14 | 2012-04-25 | 株式会社東芝 | Manufacturing method of semiconductor device |
JP2008103465A (en) * | 2006-10-18 | 2008-05-01 | Toshiba Corp | Semiconductor device and its manufacturing method |
US7879718B2 (en) * | 2006-12-27 | 2011-02-01 | Spansion Llc | Local interconnect having increased misalignment tolerance |
JP2009076637A (en) * | 2007-09-20 | 2009-04-09 | Toshiba Corp | Nonvolatile semiconductor storage device and manufacturing method therefor |
KR100941856B1 (en) | 2008-01-02 | 2010-02-11 | 주식회사 하이닉스반도체 | Flash memory device and method of manufacturing thereof |
KR102369715B1 (en) * | 2017-06-12 | 2022-03-03 | 삼성전자주식회사 | Nonvolatile memory device including two-dimensional material and apparatus including the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5907183A (en) * | 1994-09-29 | 1999-05-25 | Nkk Corporation | Non-volatile semiconductor memory device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5256588A (en) * | 1992-03-23 | 1993-10-26 | Motorola, Inc. | Method for forming a transistor and a capacitor for use in a vertically stacked dynamic random access memory cell |
US5587332A (en) * | 1992-09-01 | 1996-12-24 | Vlsi Technology, Inc. | Method of making flash memory cell |
DE69523743T2 (en) * | 1994-03-03 | 2002-08-01 | Rohm Corp | ERASER DETECTION IN A LOW VOLTAGE TRANSISTOR FLASH EEPROM CELL USING FOWLER-NORDHEIM PROGRAMMING AND ERASING |
US5598367A (en) * | 1995-06-07 | 1997-01-28 | International Business Machines Corporation | Trench EPROM |
US5793072A (en) * | 1996-02-28 | 1998-08-11 | International Business Machines Corporation | Non-photosensitive, vertically redundant 2-channel α-Si:H thin film transistor |
JPH1152429A (en) * | 1997-06-05 | 1999-02-26 | Seiko Epson Corp | Substrate for liquid crystal panel, liquid crystal panel, and electronic equipment using the same |
-
1998
- 1998-10-13 US US09/170,061 patent/US6163049A/en not_active Expired - Lifetime
-
2000
- 2000-11-30 US US09/725,843 patent/US6413820B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5907183A (en) * | 1994-09-29 | 1999-05-25 | Nkk Corporation | Non-volatile semiconductor memory device |
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US20030201491A1 (en) * | 1998-12-17 | 2003-10-30 | Samsung Electronics Co., Ltd. | Semiconductor device containing oxide/nitride/oxide dielectric layer and method of forming the same |
US6914013B2 (en) | 1998-12-17 | 2005-07-05 | Samsung Electronics Co., Ltd. | Method of forming semiconductor device containing oxide/nitride/oxide dielectric layer |
US20020098648A1 (en) * | 1999-06-10 | 2002-07-25 | Christoph Ludwig | Method for fabricating a nonvolatile semiconductor memory cell |
US20020113268A1 (en) * | 2000-02-01 | 2002-08-22 | Jun Koyama | Nonvolatile memory, semiconductor device and method of manufacturing the same |
US20040102002A1 (en) * | 2000-03-01 | 2004-05-27 | Micron Technology, Inc. | Memory cell with tight coupling |
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US7400009B2 (en) * | 2001-06-28 | 2008-07-15 | Samsung Electronics Co., Ltd. | Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers |
US20080135923A1 (en) * | 2001-06-28 | 2008-06-12 | Samsung Electronics Co., Ltd. | Non-volatile semiconductor memory devices |
US20050128816A1 (en) * | 2001-06-28 | 2005-06-16 | Chang-Hyun Lee | Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers |
US7968931B2 (en) | 2001-06-28 | 2011-06-28 | Samsung Electronics Co., Ltd. | Non-volatile semiconductor memory devices |
US20080001212A1 (en) * | 2001-06-28 | 2008-01-03 | Samsung Electronics Co., Ltd. | Non-volatile semiconductor memory devices |
US20090294838A1 (en) * | 2001-06-28 | 2009-12-03 | Samsung Electronics Co., Ltd. | Non-volatile semiconductor memory devices |
US8253183B2 (en) | 2001-06-28 | 2012-08-28 | Samsung Electronics Co., Ltd. | Charge trapping nonvolatile memory devices with a high-K blocking insulation layer |
US20060180851A1 (en) * | 2001-06-28 | 2006-08-17 | Samsung Electronics Co., Ltd. | Non-volatile memory devices and methods of operating the same |
US20030042534A1 (en) * | 2001-08-30 | 2003-03-06 | Micron Technology, Inc. | Scalable flash/NV structures and devices with extended endurance |
US7372097B2 (en) | 2001-08-30 | 2008-05-13 | Micron Technology, Inc. | Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers |
US6952032B2 (en) | 2001-08-30 | 2005-10-04 | Micron Technology, Inc. | Programmable array logic or memory devices with asymmetrical tunnel barriers |
US6958937B2 (en) | 2001-08-30 | 2005-10-25 | Micron Technology Inc. | DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators |
US6963103B2 (en) | 2001-08-30 | 2005-11-08 | Micron Technology, Inc. | SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators |
US7545674B2 (en) | 2001-08-30 | 2009-06-09 | Micron Technology, Inc. | Flash memory with low tunnel barrier interpoly insulators |
US20060001083A1 (en) * | 2001-08-30 | 2006-01-05 | Micron Technology, Inc. | Scalable Flash/NV structures and devices with extended endurance |
US20060002192A1 (en) * | 2001-08-30 | 2006-01-05 | Micron Technology | Integrated circuit memory device and method |
US7012297B2 (en) | 2001-08-30 | 2006-03-14 | Micron Technology, Inc. | Scalable flash/NV structures and devices with extended endurance |
US7027328B2 (en) | 2001-08-30 | 2006-04-11 | Micron Technology, Inc. | Integrated circuit memory device and method |
US7508025B2 (en) | 2001-08-30 | 2009-03-24 | Micron Technology, Inc. | Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interpoly insulators |
US7504687B2 (en) | 2001-08-30 | 2009-03-17 | Micron Technology, Inc. | Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interpoly insulators |
US7042043B2 (en) | 2001-08-30 | 2006-05-09 | Micron Technology, Inc. | Programmable array logic or memory devices with asymmetrical tunnel barriers |
US7750395B2 (en) | 2001-08-30 | 2010-07-06 | Micron Technology, Inc. | Scalable Flash/NV structures and devices with extended endurance |
US7759724B2 (en) | 2001-08-30 | 2010-07-20 | Micron Technology, Inc. | Memory cells having gate structure with multiple gates and multiple materials between the gates |
US7068544B2 (en) | 2001-08-30 | 2006-06-27 | Micron Technology, Inc. | Flash memory with low tunnel barrier interpoly insulators |
US20040190342A1 (en) * | 2001-08-30 | 2004-09-30 | Micron Technology, Inc. | DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators |
US20030048666A1 (en) * | 2001-08-30 | 2003-03-13 | Micron Technology, Inc. | Graded composition metal oxide tunnel barrier interpoly insulators |
US7075829B2 (en) | 2001-08-30 | 2006-07-11 | Micron Technology, Inc. | Programmable memory address and decode circuits with low tunnel barrier interpoly insulators |
US7074673B2 (en) * | 2001-08-30 | 2006-07-11 | Micron Technology, Inc. | Service programmable logic arrays with low tunnel barrier interpoly insulators |
US20060170032A1 (en) * | 2001-08-30 | 2006-08-03 | Micron Technology, Inc. | Scalable Flash/NV structures and devices with extended endurance |
US7087954B2 (en) * | 2001-08-30 | 2006-08-08 | Micron Technology, Inc. | In service programmable logic arrays with low tunnel barrier interpoly insulators |
US7473956B2 (en) | 2001-08-30 | 2009-01-06 | Micron Technology, Inc. | Atomic layer deposition of metal oxide and/or low assymmetrical tunnel barrier interpoly insulators |
US7112841B2 (en) | 2001-08-30 | 2006-09-26 | Micron Technology, Inc. | Graded composition metal oxide tunnel barrier interpoly insulators |
US7465983B2 (en) | 2001-08-30 | 2008-12-16 | Micron Technology, Inc. | Low tunnel barrier insulators |
US20040168145A1 (en) * | 2001-08-30 | 2004-08-26 | Micron Technology, Inc. | Service programmable logic arrays with low tunnel barrier interpoly insulators |
US7126183B2 (en) | 2001-08-30 | 2006-10-24 | Micron Technology, Inc. | Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers |
US7132711B2 (en) | 2001-08-30 | 2006-11-07 | Micron Technology, Inc. | Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers |
US7135734B2 (en) | 2001-08-30 | 2006-11-14 | Micron Technology, Inc. | Graded composition metal oxide tunnel barrier interpoly insulators |
US7136302B2 (en) | 2001-08-30 | 2006-11-14 | Micron Technology, Inc. | Integrated circuit memory device and method |
US7166886B2 (en) | 2001-08-30 | 2007-01-23 | Micron Technology, Inc. | DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators |
US7443715B2 (en) | 2001-08-30 | 2008-10-28 | Micron Technology, Inc. | SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators |
US20070047319A1 (en) * | 2001-08-30 | 2007-03-01 | Micron Technology, Inc. | Scalable flash/NV structures and devices with extended endurance |
US7187587B2 (en) | 2001-08-30 | 2007-03-06 | Micron Technology, Inc. | Programmable memory address and decode circuits with low tunnel barrier interpoly insulators |
US7400012B2 (en) | 2001-08-30 | 2008-07-15 | Micron Technology, Inc. | Scalable Flash/NV structures and devices with extended endurance |
US20030042528A1 (en) * | 2001-08-30 | 2003-03-06 | Leonard Forbes | Sram cells with repressed floating gate memory, low tunnel barrier interpoly insulators |
US7250338B2 (en) | 2001-08-30 | 2007-07-31 | Micron Technology, Inc. | Scalable Flash/NV structures and devices with extended endurance |
US20050023595A1 (en) * | 2001-08-30 | 2005-02-03 | Micron Technology, Inc. | Programmable array logic or memory devices with asymmetrical tunnel barriers |
US7274067B2 (en) | 2001-08-30 | 2007-09-25 | Micron Technology, Inc. | Service programmable logic arrays with low tunnel barrier interpoly insulators |
US7391072B2 (en) | 2001-08-30 | 2008-06-24 | Micron Technology, Inc. | Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers |
US6754108B2 (en) | 2001-08-30 | 2004-06-22 | Micron Technology, Inc. | DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators |
US7372096B2 (en) | 2001-08-30 | 2008-05-13 | Micron Technology, Inc. | Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers |
US6562491B1 (en) | 2001-10-15 | 2003-05-13 | Advanced Micro Devices, Inc. | Preparation of composite high-K dielectrics |
US6559014B1 (en) | 2001-10-15 | 2003-05-06 | Advanced Micro Devices, Inc. | Preparation of composite high-K / standard-K dielectrics for semiconductor devices |
US6640331B2 (en) * | 2001-11-29 | 2003-10-28 | Sun Microsystems, Inc. | Decoupling capacitor assignment technique with respect to leakage power |
US6790755B2 (en) | 2001-12-27 | 2004-09-14 | Advanced Micro Devices, Inc. | Preparation of stack high-K gate dielectrics with nitrided layer |
US7262098B2 (en) | 2001-12-28 | 2007-08-28 | Stmicroelectronics S.R.L. | Manufacturing process of a semiconductor non-volatile memory cell |
EP1324393A1 (en) * | 2001-12-28 | 2003-07-02 | STMicroelectronics S.r.l. | Manufacturing process of a semiconductor non-volatile memory cell and corresponding memory-cell |
US20030224563A1 (en) * | 2001-12-28 | 2003-12-04 | Stmicroelectronics S.R.L. | Manufacturing process of a semiconductor non-volatile memory cell and corresponding memory cell |
US20050012141A1 (en) * | 2002-02-12 | 2005-01-20 | Micron Technology, Inc. | Asymmetric band-gap engineered nonvolatile memory device |
US20050249024A1 (en) * | 2002-02-12 | 2005-11-10 | Micron Technology, Inc. | Asymmetric band-gap engineered nonvolatile memory device |
US7072223B2 (en) | 2002-02-12 | 2006-07-04 | Micron Technology, Inc. | Asymmetric band-gap engineered nonvolatile memory device |
US6950340B2 (en) | 2002-02-12 | 2005-09-27 | Micron Technology, Inc. | Asymmetric band-gap engineered nonvolatile memory device |
US6693004B1 (en) | 2002-02-27 | 2004-02-17 | Advanced Micro Devices, Inc. | Interfacial barrier layer in semiconductor devices with high-K gate dielectric material |
US6642573B1 (en) | 2002-03-13 | 2003-11-04 | Advanced Micro Devices, Inc. | Use of high-K dielectric material in modified ONO structure for semiconductor devices |
US6693321B1 (en) | 2002-05-15 | 2004-02-17 | Advanced Micro Devices, Inc. | Replacing layers of an intergate dielectric layer with high-K material for improved scalability |
US6617639B1 (en) | 2002-06-21 | 2003-09-09 | Advanced Micro Devices, Inc. | Use of high-K dielectric material for ONO and tunnel oxide to improve floating gate flash memory coupling |
US8228725B2 (en) | 2002-07-08 | 2012-07-24 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US7728626B2 (en) | 2002-07-08 | 2010-06-01 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US8691647B1 (en) | 2002-10-07 | 2014-04-08 | Spansion Llc | Memory devices containing a high-K dielectric layer |
US7123518B2 (en) * | 2004-11-22 | 2006-10-17 | United Microelectronics Crop. | Memory device |
US20060109713A1 (en) * | 2004-11-22 | 2006-05-25 | United Microelectronics Corp. | Memory Device |
US7365389B1 (en) | 2004-12-10 | 2008-04-29 | Spansion Llc | Memory cell having enhanced high-K dielectric |
US7863128B1 (en) | 2005-02-04 | 2011-01-04 | Spansion Llc | Non-volatile memory device with improved erase speed |
US20060216888A1 (en) * | 2005-03-23 | 2006-09-28 | Wei Zheng | High K stack for non-volatile memory |
US7855114B2 (en) | 2005-03-23 | 2010-12-21 | Spansion Llc | High K stack for non-volatile memory |
US7492001B2 (en) * | 2005-03-23 | 2009-02-17 | Spansion Llc | High K stack for non-volatile memory |
US20090155992A1 (en) * | 2005-03-23 | 2009-06-18 | Spansion Llc | High k stack for non-volatile memory |
US7294547B1 (en) | 2005-05-13 | 2007-11-13 | Advanced Micro Devices, Inc. | SONOS memory cell having a graded high-K dielectric |
US8921914B2 (en) | 2005-07-20 | 2014-12-30 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US8501563B2 (en) | 2005-07-20 | 2013-08-06 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US20070029601A1 (en) * | 2005-08-04 | 2007-02-08 | Orimoto Takashi W | SONOS memory cell having high-K dielectric |
US7446369B2 (en) | 2005-08-04 | 2008-11-04 | Spansion, Llc | SONOS memory cell having high-K dielectric |
US8110469B2 (en) | 2005-08-30 | 2012-02-07 | Micron Technology, Inc. | Graded dielectric layers |
US8951903B2 (en) | 2005-08-30 | 2015-02-10 | Micron Technology, Inc. | Graded dielectric structures |
US9627501B2 (en) | 2005-08-30 | 2017-04-18 | Micron Technology, Inc. | Graded dielectric structures |
US20090020805A1 (en) * | 2007-07-16 | 2009-01-22 | Samsung Electronics Co., Ltd. | Non-volatile memory devices and methods of forming the same |
US8525275B2 (en) | 2007-07-16 | 2013-09-03 | Samsung Electronics Co., Ltd. | Methods of forming non-volatile memory devices |
US7910446B2 (en) * | 2007-07-16 | 2011-03-22 | Applied Materials, Inc. | Integrated scheme for forming inter-poly dielectrics for non-volatile memory devices |
US20110045647A1 (en) * | 2007-07-16 | 2011-02-24 | Samsung Electronics Co., Ltd. | Methods of forming non-volatile memory devices |
US20090020802A1 (en) * | 2007-07-16 | 2009-01-22 | Yi Ma | Integrated scheme for forming inter-poly dielectrics for non-volatile memory devices |
US11172576B2 (en) * | 2013-11-27 | 2021-11-09 | At&S Austria Technologie & Systemtechnik Aktiengesellschaft | Method for producing a printed circuit board structure |
US11523520B2 (en) | 2014-02-27 | 2022-12-06 | At&S Austria Technologie & Systemtechnik Aktiengesellschaft | Method for making contact with a component embedded in a printed circuit board |
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