US6033919A - Method of forming sidewall capacitance structure - Google Patents
Method of forming sidewall capacitance structure Download PDFInfo
- Publication number
- US6033919A US6033919A US08/955,761 US95576197A US6033919A US 6033919 A US6033919 A US 6033919A US 95576197 A US95576197 A US 95576197A US 6033919 A US6033919 A US 6033919A
- Authority
- US
- United States
- Prior art keywords
- forming
- dielectric film
- dielectric
- electrode
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
TABLE __________________________________________________________________________ # Specific Term General Term Other Preferred Embodiments __________________________________________________________________________ 10 single crystal silicon semiconductor substrate GaAs, silicon-on-insulator 28 vertical sidcwalltemporary support 30 silicon dioxide multilayer combinations of silicon dioxide. silicon nitride, polysilicon, tin oxide, etc. 32 barium strontium titanate dielectric film barium titanate, bismuth titanate, lead zirconate titanate. strontium bismuth titanate, SiO.sub.2, SiO.sub.2 /Si.sub.3 N.sub.4 34 platinum Au, Pd, W, TiW, TiN, TiAlN, Ta, TiSi.sub.2, Al, Cu doped poly, RuO.sub.2 36 platinum same as 34stconductive eleccrode 40 platinum same as34conductive film 42 platinum same as 34condconductive electrode 44 thin filmcapacitor capacitive structure 45 implant ions 46 n- or p-doped silicon dopedregion 50 silicon dioxide silicon nitride over SiO.sub.2 52 silicon nitride polysilicon, dopedglass 54 vertical sidewalltemporary support 56aperture 58 platinum same as34nductive film 60 cylindrical electrode first conductive electrode Pt, same as 34 62 platinum same as34conductive film 64 annular electrode second conductive electrode Pt, same as 34 66 dopod spin-on glass planarizing layer silica, silicon nitride,polysilicon 68 contact mask patternedphotoresist 70 posttemporary support 72 platinum noble metal (gold, palladium) shell 74 doped polysilicon cylindrical elcctrode core TiAlN, W, TiW, Ta, TiSi.sub.2, Al, Cu, RuO.sub.2,TiN 76 TiN same as 74uctive overlayer __________________________________________________________________________
Claims (17)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/955,761 US6033919A (en) | 1996-10-25 | 1997-10-22 | Method of forming sidewall capacitance structure |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2916696P | 1996-10-25 | 1996-10-25 | |
US08/955,761 US6033919A (en) | 1996-10-25 | 1997-10-22 | Method of forming sidewall capacitance structure |
Publications (1)
Publication Number | Publication Date |
---|---|
US6033919A true US6033919A (en) | 2000-03-07 |
Family
ID=21847594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/955,761 Expired - Lifetime US6033919A (en) | 1996-10-25 | 1997-10-22 | Method of forming sidewall capacitance structure |
Country Status (6)
Country | Link |
---|---|
US (1) | US6033919A (en) |
EP (1) | EP0838852B1 (en) |
JP (1) | JPH10154801A (en) |
KR (1) | KR100492435B1 (en) |
DE (1) | DE69739274D1 (en) |
TW (1) | TW368717B (en) |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6171898B1 (en) * | 1997-12-17 | 2001-01-09 | Texas Instruments Incorporated | Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K-DRAMS using a disposable-oxide processing |
US6180446B1 (en) * | 1997-12-17 | 2001-01-30 | Texas Instruments Incorporated | Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMS using disposable-oxide processing |
US6184074B1 (en) * | 1997-12-17 | 2001-02-06 | Texas Instruments Incorporated | Method of fabrication a self-aligned polysilicon/diffusion barrier/oxygen stable sidewall bottom electrode structure for high-K DRAMS |
US6207589B1 (en) * | 1999-07-19 | 2001-03-27 | Sharp Laboratories Of America, Inc. | Method of forming a doped metal oxide dielectric film |
US6226170B1 (en) * | 1998-04-20 | 2001-05-01 | U.S. Philips Corporation | Thin-film capacitor |
US6281542B1 (en) * | 1998-04-14 | 2001-08-28 | Tsmc-Acer Semiconductor Manufacturing Corp. | Flower-like capacitor structure for a memory cell |
WO2002052618A2 (en) * | 2000-12-21 | 2002-07-04 | Infineon Technologies North America Corp. | Self-aligned double-sided vertical mim-capacitor |
KR20020066064A (en) * | 2001-02-08 | 2002-08-14 | 주식회사 하이닉스반도체 | Method for forming the concave capacitor in semiconductor device |
US6504198B2 (en) * | 2000-03-27 | 2003-01-07 | Kabushiki Kaisha Toshiba | Horizontal type ferroelectric memory and manufacturing method of the same |
US6576479B2 (en) * | 2001-04-23 | 2003-06-10 | Macronix International Co., Ltd. | Method for forming vertical ferroelectric capacitor comprising forming ferroelectric material in gap between electrodes |
US6720604B1 (en) * | 1999-01-13 | 2004-04-13 | Agere Systems Inc. | Capacitor for an integrated circuit |
US20050074979A1 (en) * | 2003-10-02 | 2005-04-07 | Haoren Zhuang | Method for forming ferrocapacitors and FeRAM devices |
KR100483013B1 (en) * | 2002-07-18 | 2005-04-15 | 주식회사 하이닉스반도체 | A storage node of a semiconductor device and a method for forming the same |
KR100519375B1 (en) * | 2000-12-21 | 2005-10-07 | 주식회사 하이닉스반도체 | Capacitor in semiconductor device and method for making the same |
US20050245025A1 (en) * | 2004-02-11 | 2005-11-03 | Kudelka Stephan P | Method of fabricating bottle trench capacitors using an electrochemical etch with electrochemical etch stop |
SG116462A1 (en) * | 2001-11-13 | 2005-11-28 | Chartered Semiconductor Mfg | Method to fabricate mim capacitor with a curvilinear surface using damascene process. |
US20050272170A1 (en) * | 2004-06-07 | 2005-12-08 | Takahisa Hayashi | Method of manufacturing ferroelectric film capacitor |
US20060250967A1 (en) * | 2005-04-25 | 2006-11-09 | Walter Miller | Data connection quality analysis apparatus and methods |
US20080311690A1 (en) * | 2007-04-04 | 2008-12-18 | Qualcomm Mems Technologies, Inc. | Eliminate release etch attack by interface modification in sacrificial layers |
US7569488B2 (en) | 2007-06-22 | 2009-08-04 | Qualcomm Mems Technologies, Inc. | Methods of making a MEMS device by monitoring a process parameter |
US20090218312A1 (en) * | 2004-09-27 | 2009-09-03 | Idc, Llc | Method and system for xenon fluoride etching with enhanced efficiency |
US20090279174A1 (en) * | 2008-05-07 | 2009-11-12 | Qualcomm Mems Technologies, Inc. | Printable static interferometric images |
US20100219155A1 (en) * | 2007-02-20 | 2010-09-02 | Qualcomm Mems Technologies, Inc. | Equipment and methods for etching of mems |
US7903316B2 (en) | 2007-07-25 | 2011-03-08 | Qualcomm Mems Technologies, Inc. | MEMS display devices and methods of fabricating the same |
US8830557B2 (en) | 2007-05-11 | 2014-09-09 | Qualcomm Mems Technologies, Inc. | Methods of fabricating MEMS with spacers between plates and devices formed by same |
US20210159310A1 (en) * | 2016-07-13 | 2021-05-27 | Samsung Electronics Co., Ltd. | Semiconductor device |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100308622B1 (en) * | 1999-04-12 | 2001-11-01 | 윤종용 | Dram cell capacitor and manufacturing method thereof |
DE19950364A1 (en) | 1999-10-19 | 2001-04-26 | Infineon Technologies Ag | Integrated circuit arrangement used as a DRAM cell arrangement comprises a capacitor with capacitor electrodes and a capacitor dielectric |
DE19950540B4 (en) * | 1999-10-20 | 2005-07-21 | Infineon Technologies Ag | Process for the preparation of a capacitor electrode with barrier structure |
JP2001250863A (en) * | 1999-12-27 | 2001-09-14 | Sanyo Electric Co Ltd | Semiconductor device and method of manufacturing the same |
KR100611387B1 (en) * | 1999-12-30 | 2006-08-11 | 주식회사 하이닉스반도체 | Method for forming capacitor in high capacitance memory device |
JP3577041B2 (en) * | 2000-05-03 | 2004-10-13 | レイセオン・カンパニー | Fixed frequency adjustment circuit using voltage variable dielectric capacitor |
FR2833783B1 (en) * | 2001-12-13 | 2004-03-12 | St Microelectronics Sa | COMPONENT OF AN INTEGRATED CIRCUIT, PAE EXAMPLE A MEMORY CELL, PROTECTED AGAINST LOGICAL HAZARDS, AND ASSOCIATED IMPLEMENTATION METHOD |
JP2004014714A (en) | 2002-06-05 | 2004-01-15 | Mitsubishi Electric Corp | Method for manufacturing capacitor |
JP5459894B2 (en) * | 2005-12-27 | 2014-04-02 | 株式会社半導体エネルギー研究所 | Semiconductor device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5276343A (en) * | 1990-04-21 | 1994-01-04 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a bit line constituted by a semiconductor layer |
US5498889A (en) * | 1993-11-29 | 1996-03-12 | Motorola, Inc. | Semiconductor device having increased capacitance and method for making the same |
US5561308A (en) * | 1994-01-18 | 1996-10-01 | Kabushiki Kaisha Toshiba | Semiconductor device including thin film transistor |
US5581436A (en) * | 1994-08-01 | 1996-12-03 | Texas Instruments Incorporated | High-dielectric-constant material electrodes comprising thin platinum layers |
US5633781A (en) * | 1995-12-22 | 1997-05-27 | International Business Machines Corporation | Isolated sidewall capacitor having a compound plate electrode |
US5828094A (en) * | 1994-03-17 | 1998-10-27 | Samsung Electronics Co., Ltd. | Memory cell structure having a vertically arranged transistors and capacitors |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5313089A (en) * | 1992-05-26 | 1994-05-17 | Motorola, Inc. | Capacitor and a memory cell formed therefrom |
US5438011A (en) * | 1995-03-03 | 1995-08-01 | Micron Technology, Inc. | Method of forming a capacitor using a photoresist contact sidewall having standing wave ripples |
DE59510349D1 (en) * | 1995-04-24 | 2002-10-02 | Infineon Technologies Ag | Semiconductor memory device using a ferroelectric dielectric and method of manufacture |
-
1997
- 1997-10-22 US US08/955,761 patent/US6033919A/en not_active Expired - Lifetime
- 1997-10-24 KR KR1019970054775A patent/KR100492435B1/en not_active IP Right Cessation
- 1997-10-27 JP JP9294680A patent/JPH10154801A/en active Pending
- 1997-10-27 DE DE69739274T patent/DE69739274D1/en not_active Expired - Lifetime
- 1997-10-27 EP EP97308617A patent/EP0838852B1/en not_active Expired - Lifetime
-
1998
- 1998-04-24 TW TW086115905A patent/TW368717B/en not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5276343A (en) * | 1990-04-21 | 1994-01-04 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a bit line constituted by a semiconductor layer |
US5498889A (en) * | 1993-11-29 | 1996-03-12 | Motorola, Inc. | Semiconductor device having increased capacitance and method for making the same |
US5561308A (en) * | 1994-01-18 | 1996-10-01 | Kabushiki Kaisha Toshiba | Semiconductor device including thin film transistor |
US5828094A (en) * | 1994-03-17 | 1998-10-27 | Samsung Electronics Co., Ltd. | Memory cell structure having a vertically arranged transistors and capacitors |
US5581436A (en) * | 1994-08-01 | 1996-12-03 | Texas Instruments Incorporated | High-dielectric-constant material electrodes comprising thin platinum layers |
US5633781A (en) * | 1995-12-22 | 1997-05-27 | International Business Machines Corporation | Isolated sidewall capacitor having a compound plate electrode |
Cited By (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6180446B1 (en) * | 1997-12-17 | 2001-01-30 | Texas Instruments Incorporated | Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMS using disposable-oxide processing |
US6184074B1 (en) * | 1997-12-17 | 2001-02-06 | Texas Instruments Incorporated | Method of fabrication a self-aligned polysilicon/diffusion barrier/oxygen stable sidewall bottom electrode structure for high-K DRAMS |
US6171898B1 (en) * | 1997-12-17 | 2001-01-09 | Texas Instruments Incorporated | Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K-DRAMS using a disposable-oxide processing |
US6281542B1 (en) * | 1998-04-14 | 2001-08-28 | Tsmc-Acer Semiconductor Manufacturing Corp. | Flower-like capacitor structure for a memory cell |
US6226170B1 (en) * | 1998-04-20 | 2001-05-01 | U.S. Philips Corporation | Thin-film capacitor |
US6720604B1 (en) * | 1999-01-13 | 2004-04-13 | Agere Systems Inc. | Capacitor for an integrated circuit |
US6207589B1 (en) * | 1999-07-19 | 2001-03-27 | Sharp Laboratories Of America, Inc. | Method of forming a doped metal oxide dielectric film |
US6504198B2 (en) * | 2000-03-27 | 2003-01-07 | Kabushiki Kaisha Toshiba | Horizontal type ferroelectric memory and manufacturing method of the same |
WO2002052618A3 (en) * | 2000-12-21 | 2003-11-27 | Infineon Technologies Corp | Self-aligned double-sided vertical mim-capacitor |
KR100519375B1 (en) * | 2000-12-21 | 2005-10-07 | 주식회사 하이닉스반도체 | Capacitor in semiconductor device and method for making the same |
WO2002052618A2 (en) * | 2000-12-21 | 2002-07-04 | Infineon Technologies North America Corp. | Self-aligned double-sided vertical mim-capacitor |
KR20020066064A (en) * | 2001-02-08 | 2002-08-14 | 주식회사 하이닉스반도체 | Method for forming the concave capacitor in semiconductor device |
US6576479B2 (en) * | 2001-04-23 | 2003-06-10 | Macronix International Co., Ltd. | Method for forming vertical ferroelectric capacitor comprising forming ferroelectric material in gap between electrodes |
SG116462A1 (en) * | 2001-11-13 | 2005-11-28 | Chartered Semiconductor Mfg | Method to fabricate mim capacitor with a curvilinear surface using damascene process. |
KR100483013B1 (en) * | 2002-07-18 | 2005-04-15 | 주식회사 하이닉스반도체 | A storage node of a semiconductor device and a method for forming the same |
US7316980B2 (en) | 2003-10-02 | 2008-01-08 | Infineon Technologies Ag | Method for forming ferrocapacitors and FeRAM devices |
US20050074979A1 (en) * | 2003-10-02 | 2005-04-07 | Haoren Zhuang | Method for forming ferrocapacitors and FeRAM devices |
WO2005031816A1 (en) * | 2003-10-02 | 2005-04-07 | Infineon Technologies Ag | Method for forming vertical ferroelectric capacitors |
US20050245025A1 (en) * | 2004-02-11 | 2005-11-03 | Kudelka Stephan P | Method of fabricating bottle trench capacitors using an electrochemical etch with electrochemical etch stop |
US7195974B2 (en) * | 2004-06-07 | 2007-03-27 | Oki Electric Industry Co., Ltd. | Method of manufacturing ferroelectric film capacitor |
US20050272170A1 (en) * | 2004-06-07 | 2005-12-08 | Takahisa Hayashi | Method of manufacturing ferroelectric film capacitor |
US20090218312A1 (en) * | 2004-09-27 | 2009-09-03 | Idc, Llc | Method and system for xenon fluoride etching with enhanced efficiency |
US20060250967A1 (en) * | 2005-04-25 | 2006-11-09 | Walter Miller | Data connection quality analysis apparatus and methods |
US8536059B2 (en) | 2007-02-20 | 2013-09-17 | Qualcomm Mems Technologies, Inc. | Equipment and methods for etching of MEMS |
US20100219155A1 (en) * | 2007-02-20 | 2010-09-02 | Qualcomm Mems Technologies, Inc. | Equipment and methods for etching of mems |
US20080311690A1 (en) * | 2007-04-04 | 2008-12-18 | Qualcomm Mems Technologies, Inc. | Eliminate release etch attack by interface modification in sacrificial layers |
US8222066B2 (en) | 2007-04-04 | 2012-07-17 | Qualcomm Mems Technologies, Inc. | Eliminate release etch attack by interface modification in sacrificial layers |
US8830557B2 (en) | 2007-05-11 | 2014-09-09 | Qualcomm Mems Technologies, Inc. | Methods of fabricating MEMS with spacers between plates and devices formed by same |
US7569488B2 (en) | 2007-06-22 | 2009-08-04 | Qualcomm Mems Technologies, Inc. | Methods of making a MEMS device by monitoring a process parameter |
US7903316B2 (en) | 2007-07-25 | 2011-03-08 | Qualcomm Mems Technologies, Inc. | MEMS display devices and methods of fabricating the same |
US20090279174A1 (en) * | 2008-05-07 | 2009-11-12 | Qualcomm Mems Technologies, Inc. | Printable static interferometric images |
US8023191B2 (en) | 2008-05-07 | 2011-09-20 | Qualcomm Mems Technologies, Inc. | Printable static interferometric images |
US20210159310A1 (en) * | 2016-07-13 | 2021-05-27 | Samsung Electronics Co., Ltd. | Semiconductor device |
US11670673B2 (en) * | 2016-07-13 | 2023-06-06 | Samsung Electronics Co., Ltd. | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
EP0838852A2 (en) | 1998-04-29 |
JPH10154801A (en) | 1998-06-09 |
DE69739274D1 (en) | 2009-04-09 |
KR19980033144A (en) | 1998-07-25 |
TW368717B (en) | 1999-09-01 |
KR100492435B1 (en) | 2006-04-21 |
EP0838852B1 (en) | 2009-02-25 |
EP0838852A3 (en) | 2004-11-10 |
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