US6028335A - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- US6028335A US6028335A US09/064,866 US6486698A US6028335A US 6028335 A US6028335 A US 6028335A US 6486698 A US6486698 A US 6486698A US 6028335 A US6028335 A US 6028335A
- Authority
- US
- United States
- Prior art keywords
- signal
- irradiation
- response
- resistor
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 230000005856 abnormality Effects 0.000 claims abstract description 32
- 238000001514 detection method Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000008859 change Effects 0.000 claims abstract description 7
- 230000015654 memory Effects 0.000 claims description 78
- 230000004044 response Effects 0.000 claims description 9
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims 13
- 230000025600 response to UV Effects 0.000 claims 8
- 238000000034 method Methods 0.000 claims 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/57—Protection from inspection, reverse engineering or tampering
- H01L23/576—Protection from inspection, reverse engineering or tampering using active circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3422—Circuits or methods to evaluate read or write disturbance in nonvolatile memory, without steps to mitigate the problem
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/005—Circuit means for protection against loss of information of semiconductor storage devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9-105779 | 1997-04-23 | ||
JP10577997A JP3001454B2 (en) | 1997-04-23 | 1997-04-23 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
US6028335A true US6028335A (en) | 2000-02-22 |
Family
ID=14416646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/064,866 Expired - Lifetime US6028335A (en) | 1997-04-23 | 1998-04-22 | Semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (1) | US6028335A (en) |
EP (1) | EP0874369B1 (en) |
JP (1) | JP3001454B2 (en) |
KR (1) | KR100299549B1 (en) |
CN (1) | CN1114950C (en) |
DE (1) | DE69806678T2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040001364A1 (en) * | 2002-06-26 | 2004-01-01 | Silicon Graphics, Inc. | System and method for a self-calibrating sense-amplifier strobe |
US20050052223A1 (en) * | 2003-09-05 | 2005-03-10 | Catalyst Semiconductor, Inc. | Programmable analog bias circuits using floating gate cmos technology |
US20050219916A1 (en) * | 2004-04-06 | 2005-10-06 | Catalyst Semiconductor, Inc. | Non-volatile CMOS reference circuit |
US20080253168A1 (en) * | 2007-04-13 | 2008-10-16 | Philippe Blanchard | Integrated circuit, resistivity changing memory device, memory module, and method of fabricating an integrated circuit |
US20110303959A1 (en) * | 2010-06-10 | 2011-12-15 | Texas Instruments Incorporated | Ultraviolet Energy Shield for Non-Volatile Charge Storage Memory |
US20140159756A1 (en) * | 2011-05-30 | 2014-06-12 | Melexis Nv | Detecting device and current sensor |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2786911A1 (en) * | 1998-12-02 | 2000-06-09 | St Microelectronics Sa | SECURE EEPROM MEMORY HAVING UV ERASING DETECTION MEANS |
EP1154375A1 (en) * | 2000-05-11 | 2001-11-14 | Infineon Technologies AG | Circuit for detection of external influences on a semiconductor chip |
DE10161046B4 (en) * | 2001-12-12 | 2006-02-02 | Infineon Technologies Ag | Digital circuitry |
US6970386B2 (en) * | 2003-03-03 | 2005-11-29 | Emosyn America, Inc. | Method and apparatus for detecting exposure of a semiconductor circuit to ultra-violet light |
KR100703971B1 (en) * | 2005-06-08 | 2007-04-06 | 삼성전자주식회사 | Semiconductor integrated circuit device and method for fabricating the same |
FR2890485A1 (en) | 2005-09-02 | 2007-03-09 | St Microelectronics Sa | INTEGRATED CIRCUIT HAVING A DATA MEMORY PROTECTED AGAINST UV ERASURE |
FR2899716A1 (en) | 2006-04-07 | 2007-10-12 | St Microelectronics Sa | METHOD FOR SECURING DATA BLOCKS IN AN ELECTRICALLY PROGRAMMABLE MEMORY |
US8997255B2 (en) | 2006-07-31 | 2015-03-31 | Inside Secure | Verifying data integrity in a data storage device |
US8352752B2 (en) | 2006-09-01 | 2013-01-08 | Inside Secure | Detecting radiation-based attacks |
CN102314036A (en) * | 2010-06-29 | 2012-01-11 | 普诚科技股份有限公司 | Anti-ultraviolet electronic device and preparation method thereof |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4935702A (en) * | 1988-12-09 | 1990-06-19 | Synaptics, Inc. | Subthreshold CMOS amplifier with offset adaptation |
US5070378A (en) * | 1988-09-22 | 1991-12-03 | Nec Corporation | Eprom erasable by uv radiation having redundant circuit |
JPH046421A (en) * | 1990-04-24 | 1992-01-10 | Matsushita Electric Works Ltd | Ultraviolet sensor for bactericidal lamp |
JPH04138137A (en) * | 1990-09-28 | 1992-05-12 | Nec San-Ei Instr Co Ltd | Skin condition detection device |
JPH0538915A (en) * | 1991-02-13 | 1993-02-19 | Atsugi Unisia Corp | Electromagnetic suspension device |
US5592004A (en) * | 1994-09-30 | 1997-01-07 | Nippondenso Co., Ltd. | Silicon nitride film having a short absorption wavelength and surrounding crystal-like grain boundaries |
US5656521A (en) * | 1995-01-12 | 1997-08-12 | Advanced Micro Devices, Inc. | Method of erasing UPROM transistors |
US5737281A (en) * | 1995-03-07 | 1998-04-07 | Sony Corporation | Data writing method and device of semiconductor device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2618579B1 (en) * | 1987-07-21 | 1989-11-10 | Thomson Semiconducteurs | INTEGRATED MEMORY CIRCUIT COMPRISING AN ANTI-FRAUD DEVICE |
EP0477369B1 (en) * | 1989-06-12 | 1997-08-13 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
FR2651593B1 (en) * | 1989-09-07 | 1991-12-06 | Sgs Thomson Microelectronics | NEVER PROGRAMMABLE CELL LOCKING DEVICE. |
JP3454520B2 (en) * | 1990-11-30 | 2003-10-06 | インテル・コーポレーション | Circuit and method for checking write state of flash storage device |
JPH04326574A (en) * | 1991-04-26 | 1992-11-16 | Nec Yamagata Ltd | Manufacture of semiconductor storage device |
-
1997
- 1997-04-23 JP JP10577997A patent/JP3001454B2/en not_active Expired - Fee Related
-
1998
- 1998-04-22 US US09/064,866 patent/US6028335A/en not_active Expired - Lifetime
- 1998-04-22 EP EP98107309A patent/EP0874369B1/en not_active Expired - Lifetime
- 1998-04-22 KR KR1019980014362A patent/KR100299549B1/en not_active IP Right Cessation
- 1998-04-22 DE DE69806678T patent/DE69806678T2/en not_active Expired - Lifetime
- 1998-04-23 CN CN98109472A patent/CN1114950C/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5070378A (en) * | 1988-09-22 | 1991-12-03 | Nec Corporation | Eprom erasable by uv radiation having redundant circuit |
US4935702A (en) * | 1988-12-09 | 1990-06-19 | Synaptics, Inc. | Subthreshold CMOS amplifier with offset adaptation |
JPH046421A (en) * | 1990-04-24 | 1992-01-10 | Matsushita Electric Works Ltd | Ultraviolet sensor for bactericidal lamp |
JPH04138137A (en) * | 1990-09-28 | 1992-05-12 | Nec San-Ei Instr Co Ltd | Skin condition detection device |
JPH0538915A (en) * | 1991-02-13 | 1993-02-19 | Atsugi Unisia Corp | Electromagnetic suspension device |
US5592004A (en) * | 1994-09-30 | 1997-01-07 | Nippondenso Co., Ltd. | Silicon nitride film having a short absorption wavelength and surrounding crystal-like grain boundaries |
US5656521A (en) * | 1995-01-12 | 1997-08-12 | Advanced Micro Devices, Inc. | Method of erasing UPROM transistors |
US5737281A (en) * | 1995-03-07 | 1998-04-07 | Sony Corporation | Data writing method and device of semiconductor device |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040001364A1 (en) * | 2002-06-26 | 2004-01-01 | Silicon Graphics, Inc. | System and method for a self-calibrating sense-amplifier strobe |
US6714464B2 (en) * | 2002-06-26 | 2004-03-30 | Silicon Graphics, Inc. | System and method for a self-calibrating sense-amplifier strobe |
US20050052223A1 (en) * | 2003-09-05 | 2005-03-10 | Catalyst Semiconductor, Inc. | Programmable analog bias circuits using floating gate cmos technology |
US6970037B2 (en) * | 2003-09-05 | 2005-11-29 | Catalyst Semiconductor, Inc. | Programmable analog bias circuits using floating gate CMOS technology |
US20050219916A1 (en) * | 2004-04-06 | 2005-10-06 | Catalyst Semiconductor, Inc. | Non-volatile CMOS reference circuit |
US7149123B2 (en) | 2004-04-06 | 2006-12-12 | Catalyst Semiconductor, Inc. | Non-volatile CMOS reference circuit |
US20080253168A1 (en) * | 2007-04-13 | 2008-10-16 | Philippe Blanchard | Integrated circuit, resistivity changing memory device, memory module, and method of fabricating an integrated circuit |
US8178379B2 (en) | 2007-04-13 | 2012-05-15 | Qimonda Ag | Integrated circuit, resistivity changing memory device, memory module, and method of fabricating an integrated circuit |
US20110303959A1 (en) * | 2010-06-10 | 2011-12-15 | Texas Instruments Incorporated | Ultraviolet Energy Shield for Non-Volatile Charge Storage Memory |
US9406621B2 (en) * | 2010-06-10 | 2016-08-02 | Texas Instruments Incorporated | Ultraviolet energy shield for non-volatile charge storage memory |
US20140159756A1 (en) * | 2011-05-30 | 2014-06-12 | Melexis Nv | Detecting device and current sensor |
US9291666B2 (en) * | 2011-05-30 | 2016-03-22 | Kabushiki Kaisha Tokai Rika Denki Seisakusho | Detecting device and current sensor |
Also Published As
Publication number | Publication date |
---|---|
JPH10303399A (en) | 1998-11-13 |
JP3001454B2 (en) | 2000-01-24 |
CN1198592A (en) | 1998-11-11 |
EP0874369A3 (en) | 1999-09-29 |
CN1114950C (en) | 2003-07-16 |
EP0874369B1 (en) | 2002-07-24 |
DE69806678D1 (en) | 2002-08-29 |
DE69806678T2 (en) | 2003-02-06 |
KR100299549B1 (en) | 2001-10-19 |
KR19980081627A (en) | 1998-11-25 |
EP0874369A2 (en) | 1998-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: NEC CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:OKAMOTO, YUJI;FUNAHASHI, NORIO;REEL/FRAME:009142/0836 Effective date: 19980409 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
AS | Assignment |
Owner name: NEC ELECTRONICS CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NEC CORPORATION;REEL/FRAME:013751/0721 Effective date: 20021101 |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
AS | Assignment |
Owner name: RENESAS ELECTRONICS CORPORATION, JAPAN Free format text: CHANGE OF NAME;ASSIGNOR:NEC ELECTRONICS CORPORATION;REEL/FRAME:025183/0611 Effective date: 20100401 |
|
FPAY | Fee payment |
Year of fee payment: 12 |
|
AS | Assignment |
Owner name: RENESAS ELECTRONICS CORPORATION, JAPAN Free format text: CHANGE OF ADDRESS;ASSIGNOR:RENESAS ELECTRONICS CORPORATION;REEL/FRAME:044928/0001 Effective date: 20150806 |