US5933439A - Etalon and single longitudinal mode laser - Google Patents

Etalon and single longitudinal mode laser Download PDF

Info

Publication number
US5933439A
US5933439A US08/877,515 US87751597A US5933439A US 5933439 A US5933439 A US 5933439A US 87751597 A US87751597 A US 87751597A US 5933439 A US5933439 A US 5933439A
Authority
US
United States
Prior art keywords
laser
etalon
resonator
longitudinal mode
single longitudinal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US08/877,515
Inventor
Hiroaki Hyuga
Yoji Okazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Assigned to FUJI PHOTO FILM CO., LTD. reassignment FUJI PHOTO FILM CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HYUGA, HIROAKI, OKAZAKI, YOJI
Application granted granted Critical
Publication of US5933439A publication Critical patent/US5933439A/en
Assigned to FUJIFILM CORPORATION reassignment FUJIFILM CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FUJIFILM HOLDINGS CORPORATION (FORMERLY FUJI PHOTO FILM CO., LTD.)
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08018—Mode suppression
    • H01S3/08022—Longitudinal modes
    • H01S3/08031—Single-mode emission
    • H01S3/08036—Single-mode emission using intracavity dispersive, polarising or birefringent elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/0401—Arrangements for thermal management of optical elements being part of laser resonator, e.g. windows, mirrors, lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation

Definitions

  • This invention relates to an etalon which is disposed in a laser resonator to make the laser oscillate in a single longitudinal mode and a laser which oscillates in a single longitudinal mode by virtue of the etalon.
  • the primary object of the present invention is to provide an etalon which can prevent fluctuation in the output of the laser due to change in the environmental moisture and/or aging of the laser.
  • Another object of the present invention is to provide a single longitudinal mode laser whose output does not fluctuate due to change in the environmental moisture and/or aging of the laser.
  • an etalon which is disposed in a resonator of a laser to make the laser oscillate in a single longitudinal mode, characterized in that opposite end faces of the etalon through which light travels are provided with coating by ion-assisted deposition.
  • the coating is of HfO 2 and SiO 2 .
  • a single longitudinal mode laser comprising a resonator and an etalon which is disposed in the resonator to make the laser oscillate in a single longitudinal mode, wherein the improvement comprises that
  • opposite end faces of the etalon through which light travels are provided with coating by ion-assisted deposition.
  • the resonator is contained in an air-tight casing.
  • the effective optical thickness nd (n representing the refractive index of the coating material and d representing the thickness of the coating) of the coating on the etalon and the output of the laser will be described first. It is assumed that the etalon is formed by forming coating 2 on opposite end faces of a substrate 1 whose refractive index and thickness are n 0 and l 0 , respectively as shown in FIG. 3. Further it is assumed that coating materials of type A and type B are used, the refractive index of the coating materials being n 1 and n 2 respectively and thickness of each coating being d i .
  • the coating 2 When the coating 2 is formed on the substrate 1, the reflecting phase becomes not 0 and accordingly effective reflecting point is shifted from the end face of the substrate 1.
  • the effective optical length L of the etalon is represented as follows.
  • the value of ⁇ changes with the refractive index n i of the coating material and thickness d i of the coating 2 and when the value of ⁇ changes, the effective optical length L of the etalon naturally changes.
  • the refractive index n i of the coating material and thickness d i of the coating 2 which change the effective optical length L of the etalon, especially the refractive index n i of the coating material, are changed with change in the environmental moisture and with aging.
  • FIG. 4 Dependence of the output and the oscillation wavelength of a laser on the temperature T of the resonator is basically as shown in FIG. 4.
  • lines a and b show the oscillation wavelengths of the laser
  • lines c and d show the outputs of the laser
  • lines A and B show the resonant wavelengths of the etalon.
  • Lines A, a and c respectively show the resonant wavelength of the etalon
  • lines B, b and d show those in a different state of environment (under the moisture different from the reference state of environment).
  • the resonant wavelength of the etalon is elongated by 0.03 nm with change in the environmental moisture from 0% to 80%, which can result in reduction of the output of the laser by 10%.
  • FIG. 1 is a schematic side view of a solid state laser in accordance with an embodiment of the present invention
  • FIG. 2 is a schematic side view of a solid state laser in accordance with another embodiment of the present invention.
  • FIG. 3 is a schematic view for illustrating the effective optical length of the etalon
  • FIG. 4 is a graph showing dependence of the output and the oscillation wavelength of a laser on the temperature of the resonator.
  • a laser diode pumped solid state laser in accordance with an embodiment of the present invention comprises a semiconductor laser 11 which emits a laser beam 10 as a pumping beam, a pair of condenser lenses 12a and 12b which condenses the laser beam 10 which is divergent light, an Nd:YLF crystal 13, that is, a YLF crystal doped with neodymium (Nd), a resonator mirror 14 disposed in front of the Nd:YLF crystal 13 (on the side of the Nd:YLF crystal 13 remote from the semiconductor laser 11), a MgO:LN crystal (LiNbO 3 crystal doped with MgO) 15, which is a nonlinear optical element having periodic domain reversals, disposed between the Nd:YLF crystal 13 and the resonator mirror 14, and a Brewster's plate 16 for controlling polarization and a solid etalon 17 which are disposed between the MgO:LN crystal 15 and the resonator mirror 14.
  • the resonator of the laser diode pumped solid state laser is formed by the ⁇ /4 plate 18 and the resonator mirror 14 as will be described later.
  • the resonator and the semiconductor laser 11 are kept at respective predetermined temperatures by a temperature control means not shown.
  • the semiconductor laser 11 emits a laser beam 10 of a wavelength of 797 nm.
  • the Nd:YLF crystal 13 cut along a c axis generates a laser beam having a wavelength of 1314 nm when neodium ions are pumped by the laser beam 10.
  • the light incident end face 18a of the ⁇ /4 plate 18 is provided with coating which is highly reflective for light of 1314 nm (reflectance of not smaller than 99.9%) and highly transmissive for the pumping laser beam 10 of 797 nm (transmittance of not smaller than 93%).
  • the mirror surface 14a of the resonator mirror 14 is provided with coating which is highly reflective for light of 1314 nm (reflectance of not smaller than 99.9%) and highly transmissive for a laser beam 10 of 657 nm (transmittance of not smaller than 90%).
  • Light of 1314 nm is confined between the light incident end face 18a of the ⁇ /4 plate 18 and the mirror surface 14a and causes laser oscillation to generate a laser beam 21 of 1314 nm.
  • the MgO:LN crystal 15 converts the laser beam 21 to its second harmonic 22 having a wavelength of 657 nm.
  • the second harmonic 22 mainly emanates from the resonator mirror 14.
  • the ⁇ /4 plates 18 and 19 are positioned so that their crystal axes are at 90° relative to each other, whereby the laser beam 21 is twisted between the ⁇ /4 plates 18 and 19.
  • the ⁇ /4 plates 18 and 19 and the solid etalon 17 which functions as a wavelength selector, the laser beam 21 oscillates in a single longitudinal mode and accordingly the second harmonic 22 also oscillates in a single longitudinal mode.
  • Opposite end faces 17a and 17b of the etalon 17 through which light travels are provided with coating by ion-assisted deposition.
  • the coating comprises alternative layers of HfO 2 having a high refractive index and SiO 2 having a low refractive index.
  • the coating exhibits a reflectance of 30% for the laser beam 21 of 1314 nm and reflectance of not larger than 0.5% for the second harmonic 22 of 657 nm.
  • the etalon 17 provided with coating by ion-assisted deposition can prevent fluctuation in the output of the laser 21 due to change in the environmental moisture and/or aging of the laser, which results in stable output of the second harmonic 22.
  • the output of the second harmonic 22 was reduced by 10% with change in the environmental moisture from 0% to 80%.
  • reduction in the output of the second harmonic 22 with change in the environmental moisture from 0% to 80% was only 2% at most.
  • a laser diode pumped solid state laser in accordance with another embodiment of the present invention will be described with reference to FIG. 2, hereinbelow.
  • the laser diode pumped solid state laser of this embodiment differs from the preceding embodiment only in that the resonator is enclosed in an air-tight package 30.
  • FIG. 2 the elements analogous to those in FIG. 1 are given the same reference numerals and will not be described here.
  • reference numerals 31 to 34 respectively denote a pumping beam inlet window, a second harmonic output window, an optical part fixture and a Peltier element for temperature control.
  • the solid etalon 17 is not subjected to change in the environmental moisture and accordingly fluctuation in the output of the second harmonic 22 due to change in the environmental moisture can be almost perfectly suppressed.
  • the solid etalon 17 is provided with coating by ion-assisted deposition, fluctuation of the second harmonic 22 due to aging also can be suppressed.
  • the present invention can be applied to various types of lasers so long as an etalon is employed as a wavelength selector. Further various solid laser media, pumping light sources, nonlinear optical materials for wavelength conversion and the like need not be limited to those described above in conjunction with the embodiments.

Abstract

An etalon is disposed in a resonator of a laser to make the laser oscillate in a single longitudinal mode. Opposite end faces of the etalon through which light travels are provided with coating by ion-assisted deposition to prevent output fluctuations of the laser due to changes in environmental moisture and/or aging of the laser. Preferably the coating is of HfO2 and SiO2. In accordance with a second aspect of the present invention, there is provided a single longitudinal mode laser comprising a resonator and an etalon which is disposed in the resonator to make the laser oscillate in a single longitudinal mode, wherein the improvement comprises that opposite end faces of the etalon through which light travels are provided with coating by ion-assisted deposition. Further, the resonator may be contained in an airtight casing.

Description

BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to an etalon which is disposed in a laser resonator to make the laser oscillate in a single longitudinal mode and a laser which oscillates in a single longitudinal mode by virtue of the etalon.
2. Description of the Related Art
There has been known a solid state laser in which a solid state laser rod doped with a rare earth metal such as neodymium is pumped with a laser beam emitted from a semiconductor laser (laser diode).
In such a laser, it has been put into practice to dispose an etalon in the resonator as a wavelength selector in order to suppress generation of mode competition noise, thereby making the oscillation mode of the laser a single longitudinal mode. See, for instance, "Optics Letters, Vol.18 (1993) p.420".
However in a laser in which an etalon is disposed in the resonator in order to obtain a single longitudinal mode oscillation, there has been a problem that the output of the laser greatly fluctuates due to change in the environmental moisture and/or aging of the laser.
SUMMARY OF THE INVENTION
In view of the foregoing observations and description, the primary object of the present invention is to provide an etalon which can prevent fluctuation in the output of the laser due to change in the environmental moisture and/or aging of the laser.
Another object of the present invention is to provide a single longitudinal mode laser whose output does not fluctuate due to change in the environmental moisture and/or aging of the laser.
In accordance with a first aspect of the present invention, there is provided an etalon, which is disposed in a resonator of a laser to make the laser oscillate in a single longitudinal mode, characterized in that opposite end faces of the etalon through which light travels are provided with coating by ion-assisted deposition.
Preferably the coating is of HfO2 and SiO2.
In accordance with a second aspect of the present invention, there is provided a single longitudinal mode laser comprising a resonator and an etalon which is disposed in the resonator to make the laser oscillate in a single longitudinal mode, wherein the improvement comprises that
opposite end faces of the etalon through which light travels are provided with coating by ion-assisted deposition.
Preferably the resonator is contained in an air-tight casing.
Our investigation has revealed that said problem of fluctuation in the output of the conventional single longitudinal mode laser due to change in the environmental moisture and aging of the laser is more apt to arise when an etalon having coating formed by conventional electron beam deposition. This point will be described in detail hereinbelow.
Relation between the effective optical thickness nd (n representing the refractive index of the coating material and d representing the thickness of the coating) of the coating on the etalon and the output of the laser will be described first. It is assumed that the etalon is formed by forming coating 2 on opposite end faces of a substrate 1 whose refractive index and thickness are n0 and l0, respectively as shown in FIG. 3. Further it is assumed that coating materials of type A and type B are used, the refractive index of the coating materials being n1 and n2 respectively and thickness of each coating being di.
When the coating 2 is formed on the substrate 1, the reflecting phase becomes not 0 and accordingly effective reflecting point is shifted from the end face of the substrate 1. When the amount of shift is represented by α, the effective optical length L of the etalon is represented as follows.
L=n.sub.0 ·l.sub.0 +2·α
The value of α changes with the refractive index ni of the coating material and thickness di of the coating 2 and when the value of α changes, the effective optical length L of the etalon naturally changes. The refractive index ni of the coating material and thickness di of the coating 2 which change the effective optical length L of the etalon, especially the refractive index ni of the coating material, are changed with change in the environmental moisture and with aging.
The resonant wavelength λ of the etalon is represented by formula λ=λ0 (L/L0), wherein λ0 and L0 respectively represent the resonant wavelength and the effective optical length in a reference state. Accordingly the resonant wavelength λ of the etalon changes due to change in the environmental moisture and aging.
Influence of the change in the resonant wavelength λ of the etalon on the output of the laser will be discussed hereinbelow. Dependence of the output and the oscillation wavelength of a laser on the temperature T of the resonator is basically as shown in FIG. 4. In FIG. 4, lines a and b show the oscillation wavelengths of the laser, lines c and d show the outputs of the laser and lines A and B show the resonant wavelengths of the etalon. Lines A, a and c respectively show the resonant wavelength of the etalon, the oscillation wavelength of the laser and the output of the laser in the reference state of environment and lines B, b and d show those in a different state of environment (under the moisture different from the reference state of environment).
As can be seen from FIG. 4, when the resonant wavelength of the etalon changes from that shown by line A to that shown by line B, the oscillation wavelength and the output of the laser change from those shown by the solid lines a and c to those shown by the broken lines b and d and accordingly the output of the laser at a set temperature Ts of the resonator changes as shown by arrow F. Influence of aging on the output of the laser is similar to that of the change in the environmental moisture described above.
Specifically when a conventional etalon having HfO2 /SiO2 coating formed by conventional electron beam deposition is employed, the resonant wavelength of the etalon is elongated by 0.03 nm with change in the environmental moisture from 0% to 80%, which can result in reduction of the output of the laser by 10%.
To the contrast, when an etalon of the present invention having HfO2 /SiO2 coating formed by ion-assisted deposition is employed, change in the resonant wavelength of the etalon is only 0.006 nm at most with change in the environmental moisture from 0% to 80%, whereby change in the output of the laser can be not more than 2%.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic side view of a solid state laser in accordance with an embodiment of the present invention,
FIG. 2 is a schematic side view of a solid state laser in accordance with another embodiment of the present invention,
FIG. 3 is a schematic view for illustrating the effective optical length of the etalon, and
FIG. 4 is a graph showing dependence of the output and the oscillation wavelength of a laser on the temperature of the resonator.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
In FIG. 1, a laser diode pumped solid state laser in accordance with an embodiment of the present invention comprises a semiconductor laser 11 which emits a laser beam 10 as a pumping beam, a pair of condenser lenses 12a and 12b which condenses the laser beam 10 which is divergent light, an Nd:YLF crystal 13, that is, a YLF crystal doped with neodymium (Nd), a resonator mirror 14 disposed in front of the Nd:YLF crystal 13 (on the side of the Nd:YLF crystal 13 remote from the semiconductor laser 11), a MgO:LN crystal (LiNbO3 crystal doped with MgO) 15, which is a nonlinear optical element having periodic domain reversals, disposed between the Nd:YLF crystal 13 and the resonator mirror 14, and a Brewster's plate 16 for controlling polarization and a solid etalon 17 which are disposed between the MgO:LN crystal 15 and the resonator mirror 14. A pair of λ/4 plates 18 and 19 for instance of quartz making the oscillation mode a twist mode are disposed on opposite sides of the Nd:YLF crystal 13.
These elements are mounted on a common casing (not shown) into a unit. The resonator of the laser diode pumped solid state laser is formed by the λ/4 plate 18 and the resonator mirror 14 as will be described later. The resonator and the semiconductor laser 11 are kept at respective predetermined temperatures by a temperature control means not shown.
The semiconductor laser 11 emits a laser beam 10 of a wavelength of 797 nm. The Nd:YLF crystal 13 cut along a c axis generates a laser beam having a wavelength of 1314 nm when neodium ions are pumped by the laser beam 10.
The light incident end face 18a of the λ/4 plate 18 is provided with coating which is highly reflective for light of 1314 nm (reflectance of not smaller than 99.9%) and highly transmissive for the pumping laser beam 10 of 797 nm (transmittance of not smaller than 93%).
The mirror surface 14a of the resonator mirror 14 is provided with coating which is highly reflective for light of 1314 nm (reflectance of not smaller than 99.9%) and highly transmissive for a laser beam 10 of 657 nm (transmittance of not smaller than 90%).
Light of 1314 nm is confined between the light incident end face 18a of the λ/4 plate 18 and the mirror surface 14a and causes laser oscillation to generate a laser beam 21 of 1314 nm. The MgO:LN crystal 15 converts the laser beam 21 to its second harmonic 22 having a wavelength of 657 nm. The second harmonic 22 mainly emanates from the resonator mirror 14.
The λ/4 plates 18 and 19 are positioned so that their crystal axes are at 90° relative to each other, whereby the laser beam 21 is twisted between the λ/4 plates 18 and 19. By virtue of the λ/4 plates 18 and 19 and the solid etalon 17 which functions as a wavelength selector, the laser beam 21 oscillates in a single longitudinal mode and accordingly the second harmonic 22 also oscillates in a single longitudinal mode.
Opposite end faces 17a and 17b of the etalon 17 through which light travels are provided with coating by ion-assisted deposition. The coating comprises alternative layers of HfO2 having a high refractive index and SiO2 having a low refractive index. The coating exhibits a reflectance of 30% for the laser beam 21 of 1314 nm and reflectance of not larger than 0.5% for the second harmonic 22 of 657 nm.
As described in detail above, the etalon 17 provided with coating by ion-assisted deposition can prevent fluctuation in the output of the laser 21 due to change in the environmental moisture and/or aging of the laser, which results in stable output of the second harmonic 22.
Specifically when a conventional etalon having coating formed by conventional electron beam deposition was employed in place of the aforesaid etalon 17, the output of the second harmonic 22 was reduced by 10% with change in the environmental moisture from 0% to 80%. To the contrast, in the case of the laser of the embodiment described above, reduction in the output of the second harmonic 22 with change in the environmental moisture from 0% to 80% was only 2% at most.
A laser diode pumped solid state laser in accordance with another embodiment of the present invention will be described with reference to FIG. 2, hereinbelow. The laser diode pumped solid state laser of this embodiment differs from the preceding embodiment only in that the resonator is enclosed in an air-tight package 30. In FIG. 2, the elements analogous to those in FIG. 1 are given the same reference numerals and will not be described here.
In FIG. 2, reference numerals 31 to 34 respectively denote a pumping beam inlet window, a second harmonic output window, an optical part fixture and a Peltier element for temperature control.
In this embodiment, since the resonator is contained in the air-tight package 30, the solid etalon 17 is not subjected to change in the environmental moisture and accordingly fluctuation in the output of the second harmonic 22 due to change in the environmental moisture can be almost perfectly suppressed.
Further since the solid etalon 17 is provided with coating by ion-assisted deposition, fluctuation of the second harmonic 22 due to aging also can be suppressed.
The present invention can be applied to various types of lasers so long as an etalon is employed as a wavelength selector. Further various solid laser media, pumping light sources, nonlinear optical materials for wavelength conversion and the like need not be limited to those described above in conjunction with the embodiments.

Claims (6)

What is claimed is:
1. An etalon, which is disposed in a resonator of a laser to make the laser oscillate in a single longitudinal mode, comprising:
a substrate; and
first and second coating layers formed by ion-assisted deposition on opposite end faces of the substrate through which light travels.
2. An etalon as defined in claim 1, wherein the first and second coating layers comprise HfO2 and SiO2.
3. A single longitudinal mode laser comprising:
a resonator; and
an etalon which is disposed in the resonator to make the laser oscillate in a single longitudinal mode, wherein opposite end faces of the etalon through which light travels are provided with coating layers formed by ion-assisted deposition.
4. A single longitudinal mode laser as defined in claim 3, wherein the resonator is completely contained in an air-tight casing.
5. A single longitudinal mode laser as recited in claim 3, wherein the resonator comprises means for controlling polarization of the laser and the laser is linearly polarized.
6. A single longitudinal mode laser as recited in the claim 5, wherein the resonator comprises a crystal for converting a wavelength of the laser and the laser is a wavelength conversion laser.
US08/877,515 1996-06-18 1997-06-17 Etalon and single longitudinal mode laser Expired - Lifetime US5933439A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8-156734 1996-06-18
JP8156734A JPH104232A (en) 1996-06-18 1996-06-18 Etalon and single longitudinal mode laser

Publications (1)

Publication Number Publication Date
US5933439A true US5933439A (en) 1999-08-03

Family

ID=15634164

Family Applications (1)

Application Number Title Priority Date Filing Date
US08/877,515 Expired - Lifetime US5933439A (en) 1996-06-18 1997-06-17 Etalon and single longitudinal mode laser

Country Status (2)

Country Link
US (1) US5933439A (en)
JP (1) JPH104232A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6584129B2 (en) * 1999-04-30 2003-06-24 Fuji Photo Film Co., Ltd. Single-longitudinal-mode solid laser
WO2003090324A2 (en) * 2002-04-19 2003-10-30 Katana Technologies Gmbh Production of laser radiation with a low bandwidth for frequency conversion
US20040071181A1 (en) * 2002-10-15 2004-04-15 Rong Huang Retro-reflective etalon and the devices using the same
US20090291075A1 (en) * 2002-04-11 2009-11-26 Altarex Medical Corp. Binding agents and their use in targeting tumor cells
US8038994B2 (en) 1996-05-15 2011-10-18 Quest Pharmatech Inc. Combination therapy for treating disease

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756606A (en) * 1986-06-05 1988-07-12 American Telephone And Telegraph Company, At&T Bell Laboratories Apparatus comprising a monolithic nonlinear Fabry-Perot etalon, and method for producing same
US4797893A (en) * 1987-06-09 1989-01-10 Virgo Optics, Inc. Microlaser system
US4995048A (en) * 1988-12-16 1991-02-19 U.S. Philips Corp. Tunable semiconductor diode laser with distributed reflection
US5278851A (en) * 1992-02-04 1994-01-11 Fuji Photo Film Co., Ltd. Solid-state laser
US5298351A (en) * 1990-06-25 1994-03-29 International Business Machines Corporation Ablation mask and use thereof
US5583683A (en) * 1995-06-15 1996-12-10 Optical Corporation Of America Optical multiplexing device
US5657341A (en) * 1994-12-27 1997-08-12 Fuji Photo Film Co., Ltd. Single longitudinal mode laser

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756606A (en) * 1986-06-05 1988-07-12 American Telephone And Telegraph Company, At&T Bell Laboratories Apparatus comprising a monolithic nonlinear Fabry-Perot etalon, and method for producing same
US4797893A (en) * 1987-06-09 1989-01-10 Virgo Optics, Inc. Microlaser system
US4995048A (en) * 1988-12-16 1991-02-19 U.S. Philips Corp. Tunable semiconductor diode laser with distributed reflection
US5298351A (en) * 1990-06-25 1994-03-29 International Business Machines Corporation Ablation mask and use thereof
US5278851A (en) * 1992-02-04 1994-01-11 Fuji Photo Film Co., Ltd. Solid-state laser
US5657341A (en) * 1994-12-27 1997-08-12 Fuji Photo Film Co., Ltd. Single longitudinal mode laser
US5583683A (en) * 1995-06-15 1996-12-10 Optical Corporation Of America Optical multiplexing device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"Optic Letters" vol. 18 (Mar. 1993) pp. 420-422, C.S. Adams et al, "Single-Frequency Operation of a Diode-Pumped Lanthanum-Neodymium-Hexaaluminate Laser By . . . ".
Optic Letters vol. 18 (Mar. 1993) pp. 420 422, C.S. Adams et al, Single Frequency Operation of a Diode Pumped Lanthanum Neodymium Hexaaluminate Laser By . . . . *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8038994B2 (en) 1996-05-15 2011-10-18 Quest Pharmatech Inc. Combination therapy for treating disease
US6584129B2 (en) * 1999-04-30 2003-06-24 Fuji Photo Film Co., Ltd. Single-longitudinal-mode solid laser
US20090291075A1 (en) * 2002-04-11 2009-11-26 Altarex Medical Corp. Binding agents and their use in targeting tumor cells
WO2003090324A2 (en) * 2002-04-19 2003-10-30 Katana Technologies Gmbh Production of laser radiation with a low bandwidth for frequency conversion
WO2003090324A3 (en) * 2002-04-19 2004-07-01 Katana Technologies Gmbh Production of laser radiation with a low bandwidth for frequency conversion
US20040071181A1 (en) * 2002-10-15 2004-04-15 Rong Huang Retro-reflective etalon and the devices using the same

Also Published As

Publication number Publication date
JPH104232A (en) 1998-01-06

Similar Documents

Publication Publication Date Title
US5278851A (en) Solid-state laser
JPH07508139A (en) tunable solid state laser
US5222088A (en) Solid-state blue laser device capable of producing a blue laser beam having high power
US6707838B2 (en) Stray light cutting structure for optical device
US5657341A (en) Single longitudinal mode laser
US5497388A (en) Laser diode pumped solid laser
US5933439A (en) Etalon and single longitudinal mode laser
US5768304A (en) Laser
US6028869A (en) Polarization control element and solid state laser
US5502738A (en) Polarization control element and solid-state laser system
US5671240A (en) Solid state laser
US5497387A (en) Solid-state laser using wedge-shaped optical member, and method for manufacturing the same
US5978392A (en) Wavelength-conversion laser
EP0820130B1 (en) Laser beam emitting apparatus
JPH07128695A (en) Light wavelength converting device
JPWO2004102752A1 (en) Solid state laser equipment
US6314120B1 (en) Semiconductor laser pumped solid state laser
JP2761678B2 (en) Laser diode pumped solid state laser
JPH06265955A (en) Wavelength converting element
JPH08190111A (en) Higher harmonic generator
JP2006237530A (en) Light stimulation solid-state laser apparatus
JPH0794818A (en) Solid laser
US7088760B1 (en) Solid-state laser apparatus including in resonator light-transmitting element having relatively small reflectance at desired wavelength
JPH1195271A (en) Optical parametric oscillator
JP2651632B2 (en) Optical wavelength converter

Legal Events

Date Code Title Description
AS Assignment

Owner name: FUJI PHOTO FILM CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HYUGA, HIROAKI;OKAZAKI, YOJI;REEL/FRAME:008615/0831

Effective date: 19970606

STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

AS Assignment

Owner name: FUJIFILM CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:FUJIFILM HOLDINGS CORPORATION (FORMERLY FUJI PHOTO FILM CO., LTD.);REEL/FRAME:018904/0001

Effective date: 20070130

Owner name: FUJIFILM CORPORATION,JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:FUJIFILM HOLDINGS CORPORATION (FORMERLY FUJI PHOTO FILM CO., LTD.);REEL/FRAME:018904/0001

Effective date: 20070130

FPAY Fee payment

Year of fee payment: 12