US5804483A - Method for producing a channel region layer in a sic-layer for a voltage controlled semiconductor device - Google Patents
Method for producing a channel region layer in a sic-layer for a voltage controlled semiconductor device Download PDFInfo
- Publication number
- US5804483A US5804483A US08/689,267 US68926796A US5804483A US 5804483 A US5804483 A US 5804483A US 68926796 A US68926796 A US 68926796A US 5804483 A US5804483 A US 5804483A
- Authority
- US
- United States
- Prior art keywords
- layer
- type
- sic
- doped
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000010410 layer Substances 0.000 claims abstract description 200
- 239000002019 doping agent Substances 0.000 claims abstract description 52
- 239000002344 surface layer Substances 0.000 claims abstract description 25
- 238000009792 diffusion process Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 34
- 108091006146 Channels Proteins 0.000 claims description 25
- 230000000873 masking effect Effects 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052790 beryllium Inorganic materials 0.000 claims description 5
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011819 refractory material Substances 0.000 claims description 5
- 108010075750 P-Type Calcium Channels Proteins 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000000370 acceptor Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (14)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9602745A SE9602745D0 (en) | 1996-07-11 | 1996-07-11 | A method for producing a channel region layer in a SiC layer for a voltage controlled semiconductor device |
US08/689,267 US5804483A (en) | 1996-07-11 | 1996-08-06 | Method for producing a channel region layer in a sic-layer for a voltage controlled semiconductor device |
EP97927560A EP0910869B1 (en) | 1996-07-11 | 1997-06-09 | A METHOD FOR PRODUCING A CHANNEL REGION LAYER IN A SiC-LAYER FOR A VOLTAGE CONTROLLED SEMICONDUCTOR DEVICE |
JP50590598A JP4502407B2 (en) | 1996-07-11 | 1997-06-09 | Method for forming a channel region layer in a SiC layer for a voltage controlled semiconductor device |
DE69727575T DE69727575T2 (en) | 1996-07-11 | 1997-06-09 | METHOD FOR FORMING A CHANNEL AREA IN A SiC LAYER FOR A VOLTAGE-CONTROLLED SEMICONDUCTOR COMPONENT |
PCT/SE1997/001002 WO1998002916A1 (en) | 1996-07-11 | 1997-06-09 | A METHOD FOR PRODUCING A CHANNEL REGION LAYER IN A SiC-LAYER FOR A VOLTAGE CONTROLLED SEMICONDUCTOR DEVICE |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9602745A SE9602745D0 (en) | 1996-07-11 | 1996-07-11 | A method for producing a channel region layer in a SiC layer for a voltage controlled semiconductor device |
US08/689,267 US5804483A (en) | 1996-07-11 | 1996-08-06 | Method for producing a channel region layer in a sic-layer for a voltage controlled semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
US5804483A true US5804483A (en) | 1998-09-08 |
Family
ID=26662711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/689,267 Expired - Lifetime US5804483A (en) | 1996-07-11 | 1996-08-06 | Method for producing a channel region layer in a sic-layer for a voltage controlled semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (1) | US5804483A (en) |
EP (1) | EP0910869B1 (en) |
JP (1) | JP4502407B2 (en) |
DE (1) | DE69727575T2 (en) |
SE (1) | SE9602745D0 (en) |
WO (1) | WO1998002916A1 (en) |
Cited By (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5902117A (en) * | 1997-05-09 | 1999-05-11 | Abb Research Ltd. | PN-diode of SiC and a method for production thereof |
US6100169A (en) * | 1998-06-08 | 2000-08-08 | Cree, Inc. | Methods of fabricating silicon carbide power devices by controlled annealing |
US6107142A (en) * | 1998-06-08 | 2000-08-22 | Cree Research, Inc. | Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion |
US20020038891A1 (en) * | 2000-10-03 | 2002-04-04 | Sei-Hyung Ryu | Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel |
US6429041B1 (en) | 2000-07-13 | 2002-08-06 | Cree, Inc. | Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation |
US20040119076A1 (en) * | 2002-12-20 | 2004-06-24 | Sei-Hyung Ryu | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors and methods of fabricating vertical JFET limited silicon carbide metal- oxide semiconductor field effect transistors |
US20040212011A1 (en) * | 2003-04-24 | 2004-10-28 | Sei-Hyung Ryu | Silicon carbide mosfets with integrated antiparallel junction barrier schottky free wheeling diodes and methods of fabricating the same |
US20040211980A1 (en) * | 2003-04-24 | 2004-10-28 | Sei-Hyung Ryu | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
US20050280004A1 (en) * | 2004-06-22 | 2005-12-22 | Das Mrinal K | Silicon carbide devices with hybrid well regions and methods of fabricating silicon carbide devices with hybrid well regions |
US20060261346A1 (en) * | 2005-05-18 | 2006-11-23 | Sei-Hyung Ryu | High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same |
US20060261345A1 (en) * | 2005-05-18 | 2006-11-23 | Sei-Hyung Ryu | High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same |
US20060261348A1 (en) * | 2005-05-18 | 2006-11-23 | Sei-Hyung Ryu | High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same |
US7414268B2 (en) | 2005-05-18 | 2008-08-19 | Cree, Inc. | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities |
US7528040B2 (en) | 2005-05-24 | 2009-05-05 | Cree, Inc. | Methods of fabricating silicon carbide devices having smooth channels |
US20090212301A1 (en) * | 2008-02-26 | 2009-08-27 | Cree, Inc. | Double Guard Ring Edge Termination for Silicon Carbide Devices and Methods of Fabricating Silicon Carbide Devices Incorporating Same |
US7656172B2 (en) | 2005-01-31 | 2010-02-02 | Cascade Microtech, Inc. | System for testing semiconductors |
US20100244047A1 (en) * | 2009-03-27 | 2010-09-30 | Cree, Inc. | Methods of Forming Semiconductor Devices Including Epitaxial Layers and Related Structures |
US20100289032A1 (en) * | 2009-05-12 | 2010-11-18 | Qingchun Zhang | Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same |
US20120012860A1 (en) * | 2010-07-16 | 2012-01-19 | Toyota Jidosha Kabushiki Kaisha | Sic semiconductor device |
US8193848B2 (en) | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
US8294507B2 (en) | 2009-05-08 | 2012-10-23 | Cree, Inc. | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits |
US8330244B2 (en) | 2006-08-01 | 2012-12-11 | Cree, Inc. | Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same |
US8354690B2 (en) | 2009-08-31 | 2013-01-15 | Cree, Inc. | Solid-state pinch off thyristor circuits |
US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
US8460977B2 (en) | 2008-08-11 | 2013-06-11 | Cree, Inc. | Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structures |
US8541787B2 (en) | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
US8629509B2 (en) | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
US8653534B2 (en) | 2008-05-21 | 2014-02-18 | Cree, Inc. | Junction Barrier Schottky diodes with current surge capability |
US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
US8710510B2 (en) | 2006-08-17 | 2014-04-29 | Cree, Inc. | High power insulated gate bipolar transistors |
US8803277B2 (en) | 2011-02-10 | 2014-08-12 | Cree, Inc. | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same |
US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
WO2015053805A1 (en) * | 2013-10-07 | 2015-04-16 | Purdue Research Foundation | Mos-based power semiconductor device having increased current carrying area and method of fabricating same |
US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
US9673283B2 (en) | 2011-05-06 | 2017-06-06 | Cree, Inc. | Power module for supporting high current densities |
US10510841B2 (en) | 2014-11-26 | 2019-12-17 | Shindengen Electric Manufacturing Co., Ltd. | Method of manufacturing a silicon carbide semiconductor device |
US11973114B2 (en) | 2021-10-12 | 2024-04-30 | Purdue Research Foundation | MOS-based power semiconductor device having increased current carrying area and method of fabricating same |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4644768B2 (en) * | 1998-02-02 | 2011-03-02 | クリー インコーポレイテッド | Silicon carbide (SiC) transistor |
CN111316406A (en) * | 2017-11-13 | 2020-06-19 | 三菱电机株式会社 | Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3451867A (en) * | 1966-05-31 | 1969-06-24 | Gen Electric | Processes of epitaxial deposition or diffusion employing a silicon carbide masking layer |
US4028149A (en) * | 1976-06-30 | 1977-06-07 | Ibm Corporation | Process for forming monocrystalline silicon carbide on silicon substrates |
JPS60113435A (en) * | 1983-11-25 | 1985-06-19 | Hitachi Ltd | Semiconductor device and its manufacture |
US4570328A (en) * | 1983-03-07 | 1986-02-18 | Motorola, Inc. | Method of producing titanium nitride MOS device gate electrode |
US4947218A (en) * | 1987-11-03 | 1990-08-07 | North Carolina State University | P-N junction diodes in silicon carbide |
US5318915A (en) * | 1993-01-25 | 1994-06-07 | North Carolina State University At Raleigh | Method for forming a p-n junction in silicon carbide |
US5322802A (en) * | 1993-01-25 | 1994-06-21 | North Carolina State University At Raleigh | Method of fabricating silicon carbide field effect transistor |
US5348895A (en) * | 1992-03-25 | 1994-09-20 | Texas Instruments Incorporated | LDMOS transistor with self-aligned source/backgate and photo-aligned gate |
US5459809A (en) * | 1993-03-15 | 1995-10-17 | Jin-Hyung Kim | Character recognition system and method therefor accommodating on-line discrete and cursive handwritten |
WO1996019834A2 (en) * | 1994-12-22 | 1996-06-27 | Abb Research Ltd. | Semiconductor device having an insulated gate |
US5597744A (en) * | 1994-06-07 | 1997-01-28 | Mitsubishi Materials Corporation | Method of producing a silicon carbide semiconductor device |
US5635412A (en) * | 1994-05-04 | 1997-06-03 | North Carolina State University | Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices |
-
1996
- 1996-07-11 SE SE9602745A patent/SE9602745D0/en unknown
- 1996-08-06 US US08/689,267 patent/US5804483A/en not_active Expired - Lifetime
-
1997
- 1997-06-09 EP EP97927560A patent/EP0910869B1/en not_active Expired - Lifetime
- 1997-06-09 DE DE69727575T patent/DE69727575T2/en not_active Expired - Lifetime
- 1997-06-09 WO PCT/SE1997/001002 patent/WO1998002916A1/en active IP Right Grant
- 1997-06-09 JP JP50590598A patent/JP4502407B2/en not_active Expired - Lifetime
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3451867A (en) * | 1966-05-31 | 1969-06-24 | Gen Electric | Processes of epitaxial deposition or diffusion employing a silicon carbide masking layer |
US4028149A (en) * | 1976-06-30 | 1977-06-07 | Ibm Corporation | Process for forming monocrystalline silicon carbide on silicon substrates |
US4570328A (en) * | 1983-03-07 | 1986-02-18 | Motorola, Inc. | Method of producing titanium nitride MOS device gate electrode |
JPS60113435A (en) * | 1983-11-25 | 1985-06-19 | Hitachi Ltd | Semiconductor device and its manufacture |
US4947218A (en) * | 1987-11-03 | 1990-08-07 | North Carolina State University | P-N junction diodes in silicon carbide |
US5348895A (en) * | 1992-03-25 | 1994-09-20 | Texas Instruments Incorporated | LDMOS transistor with self-aligned source/backgate and photo-aligned gate |
US5318915A (en) * | 1993-01-25 | 1994-06-07 | North Carolina State University At Raleigh | Method for forming a p-n junction in silicon carbide |
US5322802A (en) * | 1993-01-25 | 1994-06-21 | North Carolina State University At Raleigh | Method of fabricating silicon carbide field effect transistor |
US5459809A (en) * | 1993-03-15 | 1995-10-17 | Jin-Hyung Kim | Character recognition system and method therefor accommodating on-line discrete and cursive handwritten |
US5635412A (en) * | 1994-05-04 | 1997-06-03 | North Carolina State University | Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices |
US5597744A (en) * | 1994-06-07 | 1997-01-28 | Mitsubishi Materials Corporation | Method of producing a silicon carbide semiconductor device |
WO1996019834A2 (en) * | 1994-12-22 | 1996-06-27 | Abb Research Ltd. | Semiconductor device having an insulated gate |
Cited By (83)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5902117A (en) * | 1997-05-09 | 1999-05-11 | Abb Research Ltd. | PN-diode of SiC and a method for production thereof |
US6100169A (en) * | 1998-06-08 | 2000-08-08 | Cree, Inc. | Methods of fabricating silicon carbide power devices by controlled annealing |
US6107142A (en) * | 1998-06-08 | 2000-08-22 | Cree Research, Inc. | Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion |
US6303475B1 (en) | 1998-06-08 | 2001-10-16 | Cree, Inc. | Methods of fabricating silicon carbide power devices by controlled annealing |
US6429041B1 (en) | 2000-07-13 | 2002-08-06 | Cree, Inc. | Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation |
US6653659B2 (en) | 2000-07-13 | 2003-11-25 | Cree, Inc. | Silicon carbide inversion channel mosfets |
US20020038891A1 (en) * | 2000-10-03 | 2002-04-04 | Sei-Hyung Ryu | Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel |
US7221010B2 (en) | 2002-12-20 | 2007-05-22 | Cree, Inc. | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors |
US20040119076A1 (en) * | 2002-12-20 | 2004-06-24 | Sei-Hyung Ryu | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors and methods of fabricating vertical JFET limited silicon carbide metal- oxide semiconductor field effect transistors |
US7923320B2 (en) | 2002-12-20 | 2011-04-12 | Cree, Inc. | Methods of fabricating vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistors |
US8492827B2 (en) | 2002-12-20 | 2013-07-23 | Cree, Inc. | Vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistors |
US20070158658A1 (en) * | 2002-12-20 | 2007-07-12 | Cree, Inc. | Methods of fabricating vertical jfet limited silicon carbide metal-oxide semiconductor field effect transistors |
US20060237728A1 (en) * | 2003-04-24 | 2006-10-26 | Sei-Hyung Ryu | Silicon carbide power devices with self-aligned source and well regions |
US20040211980A1 (en) * | 2003-04-24 | 2004-10-28 | Sei-Hyung Ryu | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
US20040212011A1 (en) * | 2003-04-24 | 2004-10-28 | Sei-Hyung Ryu | Silicon carbide mosfets with integrated antiparallel junction barrier schottky free wheeling diodes and methods of fabricating the same |
US7381992B2 (en) | 2003-04-24 | 2008-06-03 | Cree, Inc. | Silicon carbide power devices with self-aligned source and well regions |
US6979863B2 (en) | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
US7074643B2 (en) | 2003-04-24 | 2006-07-11 | Cree, Inc. | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
US20060289874A1 (en) * | 2004-06-22 | 2006-12-28 | Das Mrinal K | Silicon carbide devices with hybrid well regions |
US20050280004A1 (en) * | 2004-06-22 | 2005-12-22 | Das Mrinal K | Silicon carbide devices with hybrid well regions and methods of fabricating silicon carbide devices with hybrid well regions |
US7118970B2 (en) | 2004-06-22 | 2006-10-10 | Cree, Inc. | Methods of fabricating silicon carbide devices with hybrid well regions |
US7705362B2 (en) | 2004-06-22 | 2010-04-27 | Cree, Inc. | Silicon carbide devices with hybrid well regions |
US7656172B2 (en) | 2005-01-31 | 2010-02-02 | Cascade Microtech, Inc. | System for testing semiconductors |
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Publication number | Publication date |
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DE69727575T2 (en) | 2005-06-23 |
EP0910869A1 (en) | 1999-04-28 |
WO1998002916A1 (en) | 1998-01-22 |
JP4502407B2 (en) | 2010-07-14 |
DE69727575D1 (en) | 2004-03-18 |
EP0910869B1 (en) | 2004-02-11 |
JP2000514604A (en) | 2000-10-31 |
SE9602745D0 (en) | 1996-07-11 |
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