US5599387A - Compounds and compositions for coating glass with silicon oxide - Google Patents
Compounds and compositions for coating glass with silicon oxide Download PDFInfo
- Publication number
- US5599387A US5599387A US08/472,589 US47258995A US5599387A US 5599387 A US5599387 A US 5599387A US 47258995 A US47258995 A US 47258995A US 5599387 A US5599387 A US 5599387A
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- United States
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- substituted
- carbon atoms
- radicals
- coating
- Prior art date
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 150000001875 compounds Chemical class 0.000 title claims abstract description 53
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 47
- 239000000203 mixture Substances 0.000 title claims abstract description 43
- 238000000576 coating method Methods 0.000 title abstract description 200
- 239000011248 coating agent Substances 0.000 title abstract description 198
- 239000011521 glass Substances 0.000 title description 81
- -1 perhalogenated alkyl radicals Chemical class 0.000 claims abstract description 75
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 61
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000010703 silicon Substances 0.000 claims abstract description 35
- 125000000524 functional group Chemical group 0.000 claims abstract description 31
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 26
- 230000008021 deposition Effects 0.000 claims abstract description 24
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 21
- 150000002367 halogens Chemical class 0.000 claims abstract description 21
- 125000000304 alkynyl group Chemical group 0.000 claims abstract description 20
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 18
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 14
- 239000011574 phosphorus Substances 0.000 claims abstract description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 13
- 239000001257 hydrogen Substances 0.000 claims abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 239000002841 Lewis acid Substances 0.000 claims abstract description 10
- 150000007517 lewis acids Chemical class 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052796 boron Inorganic materials 0.000 claims abstract description 9
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 9
- 239000002879 Lewis base Substances 0.000 claims abstract description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 6
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 6
- 150000007527 lewis bases Chemical class 0.000 claims abstract description 6
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 6
- 239000011669 selenium Substances 0.000 claims abstract description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 5
- 239000011593 sulfur Substances 0.000 claims abstract description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 60
- 239000008199 coating composition Substances 0.000 claims description 29
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 14
- 125000003118 aryl group Chemical group 0.000 claims description 14
- 229910052718 tin Inorganic materials 0.000 claims description 14
- 125000004429 atom Chemical group 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 125000001424 substituent group Chemical group 0.000 claims description 9
- 125000003107 substituted aryl group Chemical group 0.000 claims description 9
- YMLFYGFCXGNERH-UHFFFAOYSA-K butyltin trichloride Chemical compound CCCC[Sn](Cl)(Cl)Cl YMLFYGFCXGNERH-UHFFFAOYSA-K 0.000 claims description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 8
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 6
- 239000000460 chlorine Substances 0.000 claims description 6
- VSMRCJFUSUQJEQ-UHFFFAOYSA-N chloromethoxy(dimethyl)silane Chemical compound C[SiH](C)OCCl VSMRCJFUSUQJEQ-UHFFFAOYSA-N 0.000 claims description 6
- QFLLWLFOOHGSBE-UHFFFAOYSA-N dichloro-methyl-trimethylsilyloxysilane Chemical compound C[Si](C)(C)O[Si](C)(Cl)Cl QFLLWLFOOHGSBE-UHFFFAOYSA-N 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- OEBWMIHWFIEUFN-UHFFFAOYSA-N trichloromethoxysilane Chemical compound [SiH3]OC(Cl)(Cl)Cl OEBWMIHWFIEUFN-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000011135 tin Substances 0.000 claims description 5
- REHGYDYERSLNAA-UHFFFAOYSA-N 2,2,2-trichloroethoxysilane Chemical compound [SiH3]OCC(Cl)(Cl)Cl REHGYDYERSLNAA-UHFFFAOYSA-N 0.000 claims description 4
- JUKIBHWJCRRKCO-UHFFFAOYSA-N 2,2-dichloroethoxy(trichloromethyl)silane Chemical compound ClC(Cl)(Cl)[SiH2]OCC(Cl)Cl JUKIBHWJCRRKCO-UHFFFAOYSA-N 0.000 claims description 4
- IIVHXONOSRMDQR-UHFFFAOYSA-N 2,2-dichloroethoxysilane Chemical compound ClC(CO[SiH3])Cl IIVHXONOSRMDQR-UHFFFAOYSA-N 0.000 claims description 4
- GRDCTGYJZCENFA-UHFFFAOYSA-N 2-chloroethoxy(1,1,2,2,2-pentachloroethyl)silane Chemical compound ClC(C(Cl)(Cl)Cl)(Cl)[SiH2]OCCCl GRDCTGYJZCENFA-UHFFFAOYSA-N 0.000 claims description 4
- VDKSCJUPDACFBJ-UHFFFAOYSA-N 2-chloroethoxysilane Chemical compound [SiH3]OCCCl VDKSCJUPDACFBJ-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 claims description 4
- FFKZYRUQQVQKRN-UHFFFAOYSA-N ethoxy(1,1,2,2,2-pentachloroethyl)silane Chemical compound CCO[SiH2]C(Cl)(Cl)C(Cl)(Cl)Cl FFKZYRUQQVQKRN-UHFFFAOYSA-N 0.000 claims description 4
- WGLLCLCWXOCXIL-UHFFFAOYSA-N ethoxy(trichloromethyl)silane Chemical compound CCO[SiH2]C(Cl)(Cl)Cl WGLLCLCWXOCXIL-UHFFFAOYSA-N 0.000 claims description 4
- UXEMTNNFRRFYKU-UHFFFAOYSA-N ethoxy-bis(1,1,2,2,2-pentachloroethyl)silane Chemical compound CCO[SiH](C(Cl)(Cl)C(Cl)(Cl)Cl)C(Cl)(Cl)C(Cl)(Cl)Cl UXEMTNNFRRFYKU-UHFFFAOYSA-N 0.000 claims description 4
- JPAJKOSPZMNTSE-UHFFFAOYSA-N ethoxy-bis(trichloromethyl)silane Chemical compound CCO[SiH](C(Cl)(Cl)Cl)C(Cl)(Cl)Cl JPAJKOSPZMNTSE-UHFFFAOYSA-N 0.000 claims description 4
- VEYTZSRUODKKOD-UHFFFAOYSA-N ethoxy-tris(1,1,2,2,2-pentachloroethyl)silane Chemical compound CCO[Si](C(Cl)(Cl)C(Cl)(Cl)Cl)(C(Cl)(Cl)C(Cl)(Cl)Cl)C(Cl)(Cl)C(Cl)(Cl)Cl VEYTZSRUODKKOD-UHFFFAOYSA-N 0.000 claims description 4
- UMZAWPMWORBAJE-UHFFFAOYSA-N ethoxy-tris(trichloromethyl)silane Chemical compound CCO[Si](C(Cl)(Cl)Cl)(C(Cl)(Cl)Cl)C(Cl)(Cl)Cl UMZAWPMWORBAJE-UHFFFAOYSA-N 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- 239000012038 nucleophile Substances 0.000 claims description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 4
- OIALSCQOSLYOKV-UHFFFAOYSA-N propoxy(trichloromethyl)silane Chemical compound CCCO[SiH2]C(Cl)(Cl)Cl OIALSCQOSLYOKV-UHFFFAOYSA-N 0.000 claims description 4
- 125000000547 substituted alkyl group Chemical group 0.000 claims description 4
- 150000003606 tin compounds Chemical class 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- KOSDRGGXVCAXGC-UHFFFAOYSA-N trichloro(propoxy)silane Chemical compound CCCO[Si](Cl)(Cl)Cl KOSDRGGXVCAXGC-UHFFFAOYSA-N 0.000 claims description 4
- ZBZJXHCVGLJWFG-UHFFFAOYSA-N trichloromethyl(.) Chemical compound Cl[C](Cl)Cl ZBZJXHCVGLJWFG-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000011133 lead Substances 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 150000002902 organometallic compounds Chemical class 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 150000003003 phosphines Chemical class 0.000 claims description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 2
- 229910052706 scandium Inorganic materials 0.000 claims 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims 2
- 229910052712 strontium Inorganic materials 0.000 claims 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 claims 1
- LJSQFQKUNVCTIA-UHFFFAOYSA-N diethyl sulfide Chemical compound CCSCC LJSQFQKUNVCTIA-UHFFFAOYSA-N 0.000 claims 1
- 125000001475 halogen functional group Chemical group 0.000 claims 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 229910001507 metal halide Inorganic materials 0.000 claims 1
- 125000000962 organic group Chemical group 0.000 claims 1
- UHZYTMXLRWXGPK-UHFFFAOYSA-N phosphorus pentachloride Chemical compound ClP(Cl)(Cl)(Cl)Cl UHZYTMXLRWXGPK-UHFFFAOYSA-N 0.000 claims 1
- 239000011775 sodium fluoride Substances 0.000 claims 1
- 125000005017 substituted alkenyl group Chemical group 0.000 claims 1
- 125000004426 substituted alkynyl group Chemical group 0.000 claims 1
- 239000002243 precursor Substances 0.000 abstract description 58
- 238000000151 deposition Methods 0.000 abstract description 22
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 15
- 150000004706 metal oxides Chemical class 0.000 abstract description 15
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 10
- 230000009257 reactivity Effects 0.000 abstract description 9
- 230000036961 partial effect Effects 0.000 abstract description 3
- 239000000376 reactant Substances 0.000 abstract description 3
- 150000005840 aryl radicals Chemical group 0.000 abstract description 2
- 101100386054 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CYS3 gene Proteins 0.000 abstract 1
- 101150035983 str1 gene Proteins 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 46
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 41
- 229910001887 tin oxide Inorganic materials 0.000 description 41
- 238000000034 method Methods 0.000 description 26
- 230000008569 process Effects 0.000 description 17
- BDZBKCUKTQZUTL-UHFFFAOYSA-N triethyl phosphite Chemical compound CCOP(OCC)OCC BDZBKCUKTQZUTL-UHFFFAOYSA-N 0.000 description 16
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 14
- 230000001965 increasing effect Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 230000000670 limiting effect Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 7
- 239000008246 gaseous mixture Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 239000000543 intermediate Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- MDLRQEHNDJOFQN-UHFFFAOYSA-N methoxy(dimethyl)silicon Chemical compound CO[Si](C)C MDLRQEHNDJOFQN-UHFFFAOYSA-N 0.000 description 5
- GGAUUQHSCNMCAU-ZXZARUISSA-N (2s,3r)-butane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C[C@H](C(O)=O)[C@H](C(O)=O)CC(O)=O GGAUUQHSCNMCAU-ZXZARUISSA-N 0.000 description 4
- 150000004703 alkoxides Chemical class 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000269 nucleophilic effect Effects 0.000 description 4
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- CYTQBVOFDCPGCX-UHFFFAOYSA-N trimethyl phosphite Chemical compound COP(OC)OC CYTQBVOFDCPGCX-UHFFFAOYSA-N 0.000 description 3
- NIMDJQSDZBYVHH-UHFFFAOYSA-N 1,3,5,7-tetraethoxy-1,3,5,7,2,4,6,8-tetrazatetrasilocane Chemical compound C(C)ON1[SiH2]N([SiH2]N([SiH2]N([SiH2]1)OCC)OCC)OCC NIMDJQSDZBYVHH-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- BYLOHCRAPOSXLY-UHFFFAOYSA-N dichloro(diethyl)silane Chemical compound CC[Si](Cl)(Cl)CC BYLOHCRAPOSXLY-UHFFFAOYSA-N 0.000 description 2
- 239000012039 electrophile Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- NIRCAUPPZAUKDX-UHFFFAOYSA-N 5-benzyl-2-[[4-(3-chlorophenyl)piperazin-1-yl]methyl]-6-methylpyridazin-3-one Chemical compound O=C1C=C(CC=2C=CC=CC=2)C(C)=NN1CN(CC1)CCN1C1=CC=CC(Cl)=C1 NIRCAUPPZAUKDX-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910020667 PBr3 Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 101150108015 STR6 gene Proteins 0.000 description 1
- DOEZEYOPEPYWRK-UHFFFAOYSA-N [[[ethoxy-methyl-(trichloromethyl)silyl]amino]-methyl-(trichloromethyl)silyl]oxyethane Chemical compound CCO[Si](C)(C(Cl)(Cl)Cl)N[Si](C)(C(Cl)(Cl)Cl)OCC DOEZEYOPEPYWRK-UHFFFAOYSA-N 0.000 description 1
- OPARTXXEFXPWJL-UHFFFAOYSA-N [acetyloxy-bis[(2-methylpropan-2-yl)oxy]silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)(C)C)OC(C)(C)C OPARTXXEFXPWJL-UHFFFAOYSA-N 0.000 description 1
- LOAABXRQNAPOFO-UHFFFAOYSA-N [chloromethyl-[(chloromethyl-ethoxy-methylsilyl)amino]-methylsilyl]oxyethane Chemical compound CCO[Si](C)(CCl)N[Si](C)(CCl)OCC LOAABXRQNAPOFO-UHFFFAOYSA-N 0.000 description 1
- KXJLGCBCRCSXQF-UHFFFAOYSA-N [diacetyloxy(ethyl)silyl] acetate Chemical compound CC(=O)O[Si](CC)(OC(C)=O)OC(C)=O KXJLGCBCRCSXQF-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical group 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000007806 chemical reaction intermediate Substances 0.000 description 1
- JEZFASCUIZYYEV-UHFFFAOYSA-N chloro(triethoxy)silane Chemical compound CCO[Si](Cl)(OCC)OCC JEZFASCUIZYYEV-UHFFFAOYSA-N 0.000 description 1
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- JQBQCXKCIYGTHN-UHFFFAOYSA-N chloromethyl-(chloromethyl-ethoxy-methylsilyl)oxy-ethoxy-methylsilane Chemical compound CCO[Si](C)(CCl)O[Si](C)(CCl)OCC JQBQCXKCIYGTHN-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- AONDIGWFVXEZGD-UHFFFAOYSA-N diacetyloxy(methyl)silicon Chemical compound CC(=O)O[Si](C)OC(C)=O AONDIGWFVXEZGD-UHFFFAOYSA-N 0.000 description 1
- QEHKWLKYFXJVLL-UHFFFAOYSA-N dichloro(dimethoxy)silane Chemical compound CO[Si](Cl)(Cl)OC QEHKWLKYFXJVLL-UHFFFAOYSA-N 0.000 description 1
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical compound CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- VJNYSNRNLLTACL-UHFFFAOYSA-N ethoxy-[ethoxy-methyl-(trichloromethyl)silyl]oxy-methyl-(trichloromethyl)silane Chemical compound CCO[Si](C)(C(Cl)(Cl)Cl)O[Si](C)(C(Cl)(Cl)Cl)OCC VJNYSNRNLLTACL-UHFFFAOYSA-N 0.000 description 1
- 238000013401 experimental design Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 150000002472 indium compounds Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910003455 mixed metal oxide Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- OBCUTHMOOONNBS-UHFFFAOYSA-N phosphorus pentafluoride Chemical compound FP(F)(F)(F)F OBCUTHMOOONNBS-UHFFFAOYSA-N 0.000 description 1
- IPNPIHIZVLFAFP-UHFFFAOYSA-N phosphorus tribromide Chemical compound BrP(Br)Br IPNPIHIZVLFAFP-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- ZUEKXCXHTXJYAR-UHFFFAOYSA-N tetrapropan-2-yl silicate Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)OC(C)C ZUEKXCXHTXJYAR-UHFFFAOYSA-N 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- GPEQXXPVDLVUBW-UHFFFAOYSA-N triethoxy(1,1,2,2,2-pentachloroethyl)silane Chemical compound CCO[Si](OCC)(OCC)C(Cl)(Cl)C(Cl)(Cl)Cl GPEQXXPVDLVUBW-UHFFFAOYSA-N 0.000 description 1
- CDZULFMEYKOAEF-UHFFFAOYSA-N triethoxy(ethynyl)silane Chemical group CCO[Si](OCC)(OCC)C#C CDZULFMEYKOAEF-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 description 1
- DCGLONGLPGISNX-UHFFFAOYSA-N trimethyl(prop-1-ynyl)silane Chemical compound CC#C[Si](C)(C)C DCGLONGLPGISNX-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
Description
M--(R.sub.22).sub.q VII
TABLE 1 ______________________________________ Mole Percent Compound Broad Range Preferred Range ______________________________________ Metal Containing Precursor 0.005 to 5.0 0.1 to 2.0 Silicon Containing Precursor 0.0001 to 5.0 0.05 to 2.0 Oxygen-Containing Gas 1.0 to 99.0 5.0 to 50.0 Accelerant 0.0001 to 10.00 0.01 to 2.0 ______________________________________
TABLE 2 ______________________________________ Growth Rate, Run No. Silicon Containing Precursors Å/Second ______________________________________ 1 diethylsilane 129 2 tetraethoxysilane 43 3 di-t-butoxydiacetosilane 64 4 tetramethylcyclotetrasiloxane 181 5 tetramethylcyclotetrasiloxane 205 6 tetramethylcyclotetrasiloxane 177 7 tetramethyldisiloxane 164 8 ethyltriacetoxysilane 110* 9 triethoxysilane 139 10methyldiacetoxysilane 32 11 tetraethoxysilane + 0.31 136mole percent triethylphosphite 12 tetraethoxysilane + 0.09 87 mole percent triethylphosphite ______________________________________ *estimated
TABLE 3 __________________________________________________________________________ MBTC MBTC MBTC TEOS TEOSTEOS Sample Unit 61Unit 62Unit 64Unit 61Unit 62Cell 64 # mole % mole % mole % mole % mole % mole % __________________________________________________________________________ 1 0.280 0.190 0.490 0.050 0.050 0.020 2 0.290 0.300 0.600 0.100 0.160 0.300 3 0.350 0.200 0.940 0.300 0.300 0.270 4 0.400 0.200 0.940 0.300 0.300 0.330 5 0.600 0.758 0.790 0.390 0.400 0.350 6 0.500 0.600 1.200 0.265 0.300 0.100 __________________________________________________________________________ TEP TEP TEP WATER WATERWATER Sample Unit 61Unit 62Unit 64Unit 61Unit 62Unit 64 # mole % mole % mole % mole % mole % mole % __________________________________________________________________________ 1 0.300 0.100 0.025 0.170 0.600 0.600 2 0.280 0.110 0.039 0.180 0.330 0.630 3 0.280 0.120 0.070 0.150 0.610 0.370 4 0.280 0.100 0.050 0.150 0.610 0.370 5 0.266 0.120 0.066 0.150 0.180 0.640 6 0.400 0.300 0.288 0.400 1.000 1.000 __________________________________________________________________________ GLASS GLASS COLOR Gradient Tin Oxide Sample TEMPERATURE SPEED SATURATION Thickness Thickness # °F. inches/min. INDEX Å Å __________________________________________________________________________ 1 1230 340 5.0 1200 4000 2 1234 340 5.0 1100 4000 3 1194 340 2.3 1250 3700 4 1200 340 3.6 1150 3650 5 1190 490 8.9 850 1750 6 1200 700 4.6 1000 1700 __________________________________________________________________________ MBTC means monobutyltintrichloride TEOS means tetraethoxysilane TEP means triethyphosphite
Claims (37)
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US08/472,589 US5599387A (en) | 1993-02-16 | 1995-06-07 | Compounds and compositions for coating glass with silicon oxide |
US08/678,252 US5776236A (en) | 1993-02-16 | 1996-07-11 | Mixed metal oxide film having an accelerant |
US09/057,677 US7897259B1 (en) | 1993-02-16 | 1998-04-09 | Compounds and compositions for coating glass with silicon oxide |
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US08/017,930 US5356718A (en) | 1993-02-16 | 1993-02-16 | Coating apparatus, method of coating glass, compounds and compositions for coating glasss and coated glass substrates |
US08/264,816 US5464657A (en) | 1993-02-16 | 1994-06-23 | Method for coating a moving glass substrate |
US08/472,589 US5599387A (en) | 1993-02-16 | 1995-06-07 | Compounds and compositions for coating glass with silicon oxide |
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US08/264,816 Continuation-In-Part US5464657A (en) | 1993-02-16 | 1994-06-23 | Method for coating a moving glass substrate |
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US08/678,252 Division US5776236A (en) | 1993-02-16 | 1996-07-11 | Mixed metal oxide film having an accelerant |
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US08/678,252 Expired - Lifetime US5776236A (en) | 1993-02-16 | 1996-07-11 | Mixed metal oxide film having an accelerant |
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