Search Images Maps Play YouTube News Gmail Drive More »
Advanced Patent Search | Web History | Sign in

Patents

Referenced by

Citing PatentFiling dateIssue dateOriginal AssigneeTitle
US39784336 May 197531 Aug 1976Yoshiyuki NaitoMagnetic transmission devices using the edge-guided mode of propagation
US40064349 Jun 19751 Feb 1977Selenia-Industrie Elettroniche Associate S.p.A.Microstrip circulator operating in the peripheral mode and having non-uniform biasing means
US40500382 Sep 197520 Sep 1977Nippon Electric Company, Ltd.Edge-guided mode non-reciprocal circuit element for microwave energy
US469860424 Dec 19856 Oct 1987Thomson-CSFNonreciprocal microwave device for surface waves and an isolator having high isolation for the utilization of said device
US473320222 Oct 198622 Mar 1988Thomson-CSFCoupling device between an electromagnetic surface wave line and an external microstrip line
US669329820 Jul 200117 Feb 2004Motorola, Inc.Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US670998921 Jun 200123 Mar 2004Motorola, Inc.Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US68062023 Dec 200219 Oct 2004Motorola, Inc.Method of removing silicon oxide from a surface of a substrate
US685599224 Jul 200115 Feb 2005Motorola Inc.Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US688506520 Nov 200226 Apr 2005Freescale Semiconductor, Inc.Ferromagnetic semiconductor structure and method for forming the same
US69167173 May 200212 Jul 2005Motorola, Inc.Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US69630909 Jan 20038 Nov 2005Freescale Semiconductor, Inc.Enhancement mode metal-oxide-semiconductor field effect transistor
US69651283 Feb 200315 Nov 2005Freescale Semiconductor, Inc.Structure and method for fabricating semiconductor microresonator devices
US699232113 Jul 200131 Jan 2006Motorola, Inc.Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US700571714 May 200428 Feb 2006Freescale Semiconductor, Inc.Semiconductor device and method
US701933220 Jul 200128 Mar 2006Freescale Semiconductor, Inc.Fabrication of a wavelength locker within a semiconductor structure
US704581530 Jul 200216 May 2006Freescale Semiconductor, Inc.Semiconductor structure exhibiting reduced leakage current and method of fabricating same
US70678562 Feb 200427 Jun 2006Freescale Semiconductor, Inc.Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US71058665 Aug 200412 Sep 2006Freescale Semiconductor, Inc.Heterojunction tunneling diodes and process for fabricating same
US716122729 Jun 20049 Jan 2007Motorola, Inc.Structure and method for fabricating semiconductor structures and devices for detecting an object
US716961919 Nov 200230 Jan 2007Freescale Semiconductor, Inc.Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US721185229 Apr 20051 May 2007Freescale Semiconductor, Inc.Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US73422767 Jun 200411 Mar 2008Freescale Semiconductor, Inc.Method and apparatus utilizing monocrystalline insulator