US2855368A - Method of producing a non-vaporizing getter - Google Patents

Method of producing a non-vaporizing getter Download PDF

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US2855368A
US2855368A US455752A US45575254A US2855368A US 2855368 A US2855368 A US 2855368A US 455752 A US455752 A US 455752A US 45575254 A US45575254 A US 45575254A US 2855368 A US2855368 A US 2855368A
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vaporizing
gas
getter
sintering
zirconium
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US455752A
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Jr Hendrik Johannes Re Perdijk
Fast Johann Diedrich
Fransen Jan Josephus Bernardus
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US Philips Corp
North American Philips Co Inc
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US Philips Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J7/00Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
    • H01J7/14Means for obtaining or maintaining the desired pressure within the vessel
    • H01J7/18Means for absorbing or adsorbing gas, e.g. by gettering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00Gas-filled discharge tubes with solid cathode
    • H01J17/02Details
    • H01J17/22Means for obtaining or maintaining the desired pressure within the tube
    • H01J17/24Means for absorbing or adsorbing gas, e.g. by gettering

Definitions

  • the invention consists of one or more refractory metals capable of forming non-gaseous hydrides, such as zirconium, thorium, titanium, tantalum, niobium and vanadium. Furthermore the invention relates to a getter produced by carrying out this method.
  • the gas-absorbing constituent of which entirely or substantially consists of one or more refractory metals capable offorming non-gaseous-hydrides, such as zirconium, thorium, titanium, tantalum, niobium and vanadium the powdered gas-absorbing metal is mixed and compressed with one or more of the following non-vaporizing likewise powdered elements, which may or may not be alloyed with one another, aluminum, silicon, beryllium, cerium, lanthanum and cerium mixed metal, after which the compressed mass is arranged in a discharge tube or vacuum vessel and activated by heating.
  • the surface layers on the gas-binding metal are reduced entirely or in part, or the additional element exhibits a chemical or physical interaction with the closing layers such as to enable the subjacent refractory metal to exercise its gas-absorption efiect.
  • the heating temperature required is not as high as if the oxide should be caused to diffuse inwards, in which case the refractory metal also sinters to compactn'ess with the result that the free surface is reduced and the gas-absorption effect is again adversely 'afiecte'd.
  • this metal powder cannot be degassed without sintering to compactness, as is the case with powdered zirconium, it is possible to mix this metal powder with some other refractory metal powder which may not absorb gas, such as powdered tungsten, in which case sintering to compactness does not occur to the same extent and the "degassed product can readily be worked into powder.
  • a further metal which at a high temperature binds the added element, for example nickel, iron or titanium.
  • a further metal which at a high temperature binds the added element, for example nickel, iron or titanium.
  • the accessibility of the fine grains of the gas-absorbing metal can be improved while due to the liberated reaction heat the activation is accelerated.
  • the refractory gas-absorbing metal powder it is also possible to start with the hydride which due to the heating process is already decomposed before the activation temperature is reached. If the refractory metal and the additional metal are capable of forming an alloy, this may contribute in some cases to the gas-absorption efiect. It will be appreciated that, if titanium is used as gas-absorbing metal, the additional metal should not be titanium also.
  • Example II Thorium and cerium silicon (Th and ICeSi) are mixed at a weight ratio of 3:1 and in the manner described hereinbefore worked into a pastille. In this case also, the
  • pulverulent metal selected from the group consisting of nickel, iron and titanium to form a coherent mass, mounting said mass within a vessel, and then activating said mass for the first, time While within saidvessel by subjecting it to heat without sintering or vaporizing it.
  • Example I V Non-degassed powdered'zirconium is mixed'with pow dered aluminum and powdered nickel at a weight ratio of 3 :1 :2 and the mixture is compressed into apastille, which is mounted as getter in a discharge tube. After heating to 700 C. the aluminum activates the zirconium but also reacts with the nickel 'so that a spongy skeleton of an aluminum-nickel alloy is produced containing activated zirconium grains which are held by the skeleton,
  • the nickel may also be added in the form of nickel titanium-Ni Ti, which is not magnetic.
  • Example V If in the preceding example degassed powdered zirconium and tungsten are used instead of the non-degassed zirconium, the quantity by weight of the tungsten being one and a half times that of the zirconium, a satisfactory getter is also obtained.
  • the mixing ratio ZrW- A1Ni is 3:4:5:1:2. This is also the case if tantalum is used as an alternative to tungsten.
  • a method of producing a non-vaporizing getter comprising mixing and compressing without sintering
  • pulverulent gas-absorbing thorium and pulverulent cerium-silicon in a weightratio of about 3:1 to form a coherent body mounting saidbody within a discharge tube, and activating said body by subjecting the same to an elevated temperature without sintering or vaporizing it.
  • Amethod of producing anon-vaporizing getter comprising mixing and compressing without sintering pulverulent gas-absorbing Zirconium and pulverulent titanium-aluminum to form a, coherent body, mounting said body within a discharge tube, and activating said body by subjecting the same to an elevated temperature without'sinteringor vaporizing it.
  • a method of producing a non-vaporizing getter comprising mixing and compressing without sintering pulverulent gas-absorbing zirconium, pulverulent aluminum and pulverulent nickel to form a coherent body, mounting said body within a discharge tube, and activating said body by subjecting thesame to an elevated temperature without sintering or vaporizing it.

Description

Unite Y fates METHOD OF PRODUCING A NON-VAPORIZING GETTER Hendrik Johannes Reinierus Perdijk, Jr., 'Johann Diedricli Fast, and Jan Josephus Bernardus Fransen, Eindhoven, Netherlands, assignors, by mesne assignments, to North American Philips Company, Inc., New York, N. Y., a corporation of Delaware No Drawing. Application September 13, 1954 Serial No. 455,752
Claims priority, application Netherlands September 30, 1953 12 Claims. (Cl. 252--181.6)
consists of one or more refractory metals capable of forming non-gaseous hydrides, such as zirconium, thorium, titanium, tantalum, niobium and vanadium. Furthermore the invention relates to a getter produced by carrying out this method.
It is well known that the satisfactory gas-absorption effect of zirconium is adversely aifected by surface layers, for example consisting of oxide, and that the gas-absorption effect may be restored by heating in vacuo or in a non-corrodiug atmosphere to a temperature such that the oxide diffuses inwards.
It is also known to sinter a metal, such as titanium, zirconium, tantalum or thorium, with an alloy of cerium and aluminum, lanthanum and aluminum or cerium mixed metal (misc-h metal) and aluminum and to work the sintered material'into a fine powder. The powder obtained is already capable of absorbing gases and is usually secured in place on an electrode surface by means ofa binding liquid. The electrode having the powder applied to it is heated to a temperature such that the powder is secured to it by sintering, while the activity which has been reduced by gas-absorption is also partly restored. This heating process is affected before mounting in the tube or after mounting in and evacuation of the tube. In the first case the getter must again be activated by heating in the tube. The temperature required vstrong gas-absorption effect even at a low temperature,
preferably at room temperature.
According to the invention, in a method of producing a non-vaporizing getter for use in electric discharge tubes or other vacuum vessels the gas-absorbing constituent of which entirely or substantially consists of one or more refractory metals capable offorming non-gaseous-hydrides, such as zirconium, thorium, titanium, tantalum, niobium and vanadium, the powdered gas-absorbing metal is mixed and compressed with one or more of the following non-vaporizing likewise powdered elements, which may or may not be alloyed with one another, aluminum, silicon, beryllium, cerium, lanthanum and cerium mixed metal, after which the compressed mass is arranged in a discharge tube or vacuum vessel and activated by heating.
, 2,855,368 l atented Oct. 7, 1958 Due to the heating process the surface layers on the gas-binding metal are reduced entirely or in part, or the additional element exhibits a chemical or physical interaction with the closing layers such as to enable the subjacent refractory metal to exercise its gas-absorption efiect. The heating temperature required is not as high as if the oxide should be caused to diffuse inwards, in which case the refractory metal also sinters to compactn'ess with the result that the free surface is reduced and the gas-absorption effect is again adversely 'afiecte'd. If use is preferably made of a degassed refractory metal powder as starting material and this metal powder cannot be degassed without sintering to compactness, as is the case with powdered zirconium, it is possible to mix this metal powder with some other refractory metal powder which may not absorb gas, such as powdered tungsten, in which case sintering to compactness does not occur to the same extent and the "degassed product can readily be worked into powder.
In order to enable a large amount of the element upsetting the surface layers to be added, provision may also be made of a further metal which at a high temperature binds the added element, for example nickel, iron or titanium. Thus, the accessibility of the fine grains of the gas-absorbing metal can be improved while due to the liberated reaction heat the activation is accelerated. In order to obtain the refractory gas-absorbing metal powder it is also possible to start with the hydride which due to the heating process is already decomposed before the activation temperature is reached. If the refractory metal and the additional metal are capable of forming an alloy, this may contribute in some cases to the gas-absorption efiect. It will be appreciated that, if titanium is used as gas-absorbing metal, the additional metal should not be titanium also.
.The method according to the invention has the advantage that the getter is only produced in the discharge tube and then is immediately active. In the known methods the getter is kept in air and heated with a binding agent whileit is active, with the resultant formation of, for example, carbides and/or oxides. The gasabso'rption effect at room temperature of the getters according to the invention has a particular advantage in that there is a greater freedom in the choice of the point at which the getter should be arranged and that the gettter is active even in tubes in which no hot electrodes are available. The gas-binder is active even in a non-operative tube, as is also the case with, for example, barium.
If a further metal is added which is capable. of reacting with the added element with the production of heat, heating must only be effected to such a degree that this reaction sets in, whereupon the liberated heat causes the temperature to rise automatically. Under these conditions the activation of the getter is effected very rapidly and satisfactorily. In this event it is not necessary for the getter to be heated for a long period of time from without with the aid of high frequency fields with resultant reduction of the risk of damaging adjacent parts or tube wall.
The invention will now be explained with reference to the following examples. i
Example I Powdered zirconium and powdered aluminum in amounts of 98% and 2% respectively by weight of the mixture are mixed and compressed to form a pastille which is mounted on a metal band in a discharge tube. After evacuation the pastille is activated by heating it in vacuo for a few minutes at a temperature of approximately 800 C. Thereupon the tube is sealed. The gasabsorption effect at room temperature is very satisfactoryr After much gas has been absorbed the pastille pulverizes; In order to prevent the attendant disadvantages a fine gauze may be weldedover thepastille. Even if the relative amount of the aluminum is increased to 30%, the gas absorption effect remains satisfactory and the activity even increases with increase in the percentage of aluminum.
Example II Thorium and cerium silicon (Th and ICeSi) are mixed at a weight ratio of 3:1 and in the manner described hereinbefore worked into a pastille. In this case also, the
- gas absorption effect at room temperature is satisfactory after activation by heating at 800 (3., As an alternativ to CeSi use may be also made of CeAl Example III Zirconium or zirconium hydride are mixed with titanium aluminum (TiAl at. a weight ratio of 5:1.
pulverulent metal selected from the group consisting of nickel, iron and titanium to form a coherent mass, mounting said mass within a vessel, and then activating said mass for the first, time While within saidvessel by subjecting it to heat without sintering or vaporizing it.
In this case also a satisfactory getter at room temperature is obtained by activation,
Example I V Non-degassed powdered'zirconium is mixed'with pow dered aluminum and powdered nickel at a weight ratio of 3 :1 :2 and the mixture is compressed into apastille, which is mounted as getter in a discharge tube. After heating to 700 C. the aluminum activates the zirconium but also reacts with the nickel 'so that a spongy skeleton of an aluminum-nickel alloy is produced containing activated zirconium grains which are held by the skeleton,
with the result that on gas absorption no pulverization occurs. If the use of powdered nickeL'which is magnetic, presents difiiculty, the nickel may also be added in the form of nickel titanium-Ni Ti, which is not magnetic.
Example V If in the preceding example degassed powdered zirconium and tungsten are used instead of the non-degassed zirconium, the quantity by weight of the tungsten being one and a half times that of the zirconium, a satisfactory getter is also obtained. The mixing ratio ZrW- A1Ni is 3:4:5:1:2. This is also the case if tantalum is used as an alternative to tungsten.
Example VI coherent mass, mounting said mass within a vessel, andthen activating said mass for the first time while within said vessel by subjecting it to heat without sintering or vaporizing it. v
2. A method as set forth in claim 1 wherein a third 4. A method as set forth in claim 3 wherein the co- 'lierent mass also includes an element selected from the group consisting of cerium and lanthanum;
5. A method of producing a non-vaporizing getter comprising mixing and compressing without sintering pulverulent gas-absorbing zirconium and 2' to 30 weight percent of pulverulent aluminum to form a coherent body, mounting said body within a discharge tube, and acti vating said body'by subjecting the same to an elevated temperature without sintering or vaporizing it.
6. A method of producing a non-vaporizing getter comprising mixing and compressing without sintering,
pulverulent gas-absorbing thorium and pulverulent cerium-silicon in a weightratio of about 3:1 to form a coherent body, mounting saidbody within a discharge tube, and activating said body by subjecting the same to an elevated temperature without sintering or vaporizing it.
7. Amethod of producing anon-vaporizing getter comprising mixing and compressing without sintering pulverulent gas-absorbing Zirconium and pulverulent titanium-aluminum to form a, coherent body, mounting said body within a discharge tube, and activating said body by subjecting the same to an elevated temperature without'sinteringor vaporizing it. I I
8. A method as set forth in claim 7 wherein thezirconium and titanium-aluminum are in a weight ratio of about 5:1.
9. A method of producing a non-vaporizing getter comprising mixing and compressing without sintering pulverulent gas-absorbing zirconium, pulverulent aluminum and pulverulent nickel to form a coherent body, mounting said body within a discharge tube, and activating said body by subjecting thesame to an elevated temperature without sintering or vaporizing it.
10. A method as set forth in claim 9 wherein the body also contains an element selected from the group consisting of tungsten and tantalum. j
11. A method as set forth in claim 9 wherein the nickel is replaced by nickel-titanium.
12. A method as set forth in claim 10 wherein the zirconium, tungsten and tantalum, aluminum and nickel are in a weight ratio of about 3:4.5:1:2.
References Cited in the file of this patent UNITED STATES PATENTS 1,663,561 ONeill Mar. 27, 1928 1,958,967 Kniepen May 15, 1934 2,018,965 McQuade Oct. 29, 1935 2,362,468 Clark Nov. 14, 1944 2,368,060 Wooten Jan. 23, 1945 2,444,158 Driggs June 29, 1948 2,449,786 Lockwood Sept. 21, 1948

Claims (2)

1. A METHOD OF PRODUCING A NON-VAPORIZING GETTER COMPRISING MIXING AND COMPRESSING WITHOUT SINTERING A FIRST PULVERULENT GAS-ABSORBING METAL SELECTED FROM THE GROUP CONSISTING OF ZIRCONIUM, THORIUM, TITANINUM, TANTALUM, NIOBIUM AND VANADIUM AND SELECTED FROM THE GROUP MATERIAL CONTAINING AN ELEMENT SELECTED FROM THE GROUP CONSISTING OF ALUMINUM, SILICON, AND BERYLLIUM TO FORM A COHERENT MASS, MOUNTING SAID MASS WITHIN A VESSEL, AND THEN ACTIVATING SAID MASS FOR THE FIRST TIME WHILE WITHIN SAID VESSEL BY SUBJECTING IT TO HEAT WITHOUT SINTERING OR VAPORIZING IT.
3. A METHOD OF PRODUCING A NON-VAPORIZING GETTER COMPRISING MIXING AND COMPRESSING WITHOUT SINTERING A FIRST PULVERULENT GAS-ABSORBENT METAL SELECTED FROM THE GROUP CONSISTING OF ZIRCONIUM, THORIUM, TITANIUM, TANTALUM, NIOBIUM AND VANADIUM, A SECOND PULVERULENT MATERIAL CONSISTING AN ELEMENT SELECTED FROM THE GROUP CONSISTING OF ALUMINUM, SILICON, AND BERYLLIUM AND A THIRD PULVERULENT METAL SELECTED FROM THE GROUP CONSISTING OF NICKEL, IRON AND TITANIUM TO FORM A COHERENT MASS, MOUNTING SAID MASS WITHIN A VESSEL, AND THEN ACTIVATING SAID MASS FOR THE FIRST TIME WHILE SAID VESSEL BY SUBJECTING IT TO HEAT WITHOUT SINTERING OR VAPORIZING IT.
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Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3007816A (en) * 1958-07-28 1961-11-07 Motorola Inc Decontamination process
US3082174A (en) * 1959-11-17 1963-03-19 North American Phillips Compan Method of manufacturing a non-evaporating getter and getter made by this method
US3187885A (en) * 1961-11-21 1965-06-08 Philips Corp Getter
US3203901A (en) * 1962-02-15 1965-08-31 Porta Paolo Della Method of manufacturing zirconiumaluminum alloy getters
US3259490A (en) * 1963-05-07 1966-07-05 Motorola Inc Gettering in semiconductor devices
US3408130A (en) * 1966-01-08 1968-10-29 Philips Corp Nonevaporative getter
US3525009A (en) * 1968-02-05 1970-08-18 Tokyo Shibaura Electric Co Low pressure mercury vapour discharge lamp including an alloy type getter coating
US3584253A (en) * 1968-04-01 1971-06-08 Siemens Ag Getter structure for electrical discharge and method of making the same
DE2340102A1 (en) * 1972-08-10 1974-02-21 Getters Spa GETTER DEVICE AND MATERIAL
DE2361532A1 (en) * 1972-12-14 1974-06-27 Getters Spa GETTING DEVICE AND METHOD OF MANUFACTURING IT
US4297082A (en) * 1979-11-21 1981-10-27 Hughes Aircraft Company Vacuum gettering arrangement
US4382646A (en) * 1980-11-13 1983-05-10 Radcal Corporation Method for removing gases caused by out-gassing in a vacuum vessel
DE3235681A1 (en) * 1981-11-02 1983-05-11 Maja Feodos'evna Bojarina Non-vaporisable getter
US4428856A (en) 1982-09-30 1984-01-31 Boyarina Maya F Non-evaporable getter
US6139390A (en) * 1996-12-12 2000-10-31 Candescent Technologies Corporation Local energy activation of getter typically in environment below room pressure
US6194830B1 (en) 1996-12-12 2001-02-27 Candescent Technologies Corporation Multi-compartment getter-containing flat-panel device
US20030122485A1 (en) * 2001-12-28 2003-07-03 Fujitsu Limited Gas discharge tube

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1663561A (en) * 1927-03-03 1928-03-27 Westinghouse Lamp Co Electron-discharge device
US1958967A (en) * 1931-10-22 1934-05-15 Allg Elek Tatz Ges Electron discharge tube and method of making same
US2018965A (en) * 1933-11-10 1935-10-29 Kemet Lab Co Inc Clean-up agent
US2362468A (en) * 1941-09-27 1944-11-14 Fansteel Metallurgical Corp Getter
US2368060A (en) * 1942-01-01 1945-01-23 Bell Telephone Labor Inc Coating of electron discharge device parts
US2444158A (en) * 1944-07-31 1948-06-29 Fansteel Metallurgical Corp Thermionic device and getter elements therefor
US2449786A (en) * 1943-03-05 1948-09-21 Westinghouse Electric Corp Getter

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1663561A (en) * 1927-03-03 1928-03-27 Westinghouse Lamp Co Electron-discharge device
US1958967A (en) * 1931-10-22 1934-05-15 Allg Elek Tatz Ges Electron discharge tube and method of making same
US2018965A (en) * 1933-11-10 1935-10-29 Kemet Lab Co Inc Clean-up agent
US2362468A (en) * 1941-09-27 1944-11-14 Fansteel Metallurgical Corp Getter
US2368060A (en) * 1942-01-01 1945-01-23 Bell Telephone Labor Inc Coating of electron discharge device parts
US2449786A (en) * 1943-03-05 1948-09-21 Westinghouse Electric Corp Getter
US2444158A (en) * 1944-07-31 1948-06-29 Fansteel Metallurgical Corp Thermionic device and getter elements therefor

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3007816A (en) * 1958-07-28 1961-11-07 Motorola Inc Decontamination process
US3082174A (en) * 1959-11-17 1963-03-19 North American Phillips Compan Method of manufacturing a non-evaporating getter and getter made by this method
US3187885A (en) * 1961-11-21 1965-06-08 Philips Corp Getter
US3203901A (en) * 1962-02-15 1965-08-31 Porta Paolo Della Method of manufacturing zirconiumaluminum alloy getters
US3259490A (en) * 1963-05-07 1966-07-05 Motorola Inc Gettering in semiconductor devices
US3408130A (en) * 1966-01-08 1968-10-29 Philips Corp Nonevaporative getter
US3525009A (en) * 1968-02-05 1970-08-18 Tokyo Shibaura Electric Co Low pressure mercury vapour discharge lamp including an alloy type getter coating
US3584253A (en) * 1968-04-01 1971-06-08 Siemens Ag Getter structure for electrical discharge and method of making the same
DE2340102A1 (en) * 1972-08-10 1974-02-21 Getters Spa GETTER DEVICE AND MATERIAL
US3926832A (en) * 1972-08-10 1975-12-16 Getters Spa Gettering structure
DE2361532A1 (en) * 1972-12-14 1974-06-27 Getters Spa GETTING DEVICE AND METHOD OF MANUFACTURING IT
US4297082A (en) * 1979-11-21 1981-10-27 Hughes Aircraft Company Vacuum gettering arrangement
US4382646A (en) * 1980-11-13 1983-05-10 Radcal Corporation Method for removing gases caused by out-gassing in a vacuum vessel
DE3235681A1 (en) * 1981-11-02 1983-05-11 Maja Feodos'evna Bojarina Non-vaporisable getter
US4428856A (en) 1982-09-30 1984-01-31 Boyarina Maya F Non-evaporable getter
US6139390A (en) * 1996-12-12 2000-10-31 Candescent Technologies Corporation Local energy activation of getter typically in environment below room pressure
US6194830B1 (en) 1996-12-12 2001-02-27 Candescent Technologies Corporation Multi-compartment getter-containing flat-panel device
US20030122485A1 (en) * 2001-12-28 2003-07-03 Fujitsu Limited Gas discharge tube

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