US20150279824A1 - Electronic package and method of forming an electronic package - Google Patents

Electronic package and method of forming an electronic package Download PDF

Info

Publication number
US20150279824A1
US20150279824A1 US14/228,685 US201414228685A US2015279824A1 US 20150279824 A1 US20150279824 A1 US 20150279824A1 US 201414228685 A US201414228685 A US 201414228685A US 2015279824 A1 US2015279824 A1 US 2015279824A1
Authority
US
United States
Prior art keywords
conductive layer
mold
patterned
electronic package
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US14/228,685
Inventor
Vijay K. Nair
Chuan Hu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to US14/228,685 priority Critical patent/US20150279824A1/en
Assigned to INTEL CORPORATION reassignment INTEL CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HU, CHUAN, NAIR, VIJAY K
Publication of US20150279824A1 publication Critical patent/US20150279824A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565Moulds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19Manufacturing methods of high density interconnect preforms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/20Structure, shape, material or disposition of high density interconnect preforms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568Temporary substrate used as encapsulation process aid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241Disposition
    • H01L2224/24135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241Disposition
    • H01L2224/24151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24153Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/24195Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19042Component type being an inductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Definitions

  • Embodiments described herein generally relate to an electronic package and methods of forming an electronic package.
  • FIG. 1 shows the typical surface morphology of a SMT passive electronic component 1 .
  • Conventional SMT passive components are typically produced with a relatively less stringent dimensional accuracy.
  • the conductors 2 on conventional SMT passive components typically have a rough surface finish with solder.
  • One of the manufacturing issues associated with using conventional SMT passive components are that the passive components don't have good dimensional accuracy and the component placement accuracy of existing SMT pick and place machines (such as chip shooters), which are used for the passive component placement with high throughput, is not sufficient to make reliable metal-to-metal connection when a traditional embedded wafer level ball grid array (eWLB) process is used to embed passive components in the molding compound.
  • eWLB embedded wafer level ball grid array
  • FIG. 2 shows one of the problematic issues associated with using traditional fabrication technology for embedding passive electronic components.
  • the surface finish of the conductors e.g., metal pads
  • This rough finish surface finish and poor dimensional accuracy may cause an unacceptable level of surface contamination risk on the conductors of a passive electronic component.
  • even clean metal pads might have a finish that is too rough or have a different metallization that is not robust enough to maintain integrity or have surface contamination through the buildup process.
  • the dimensional specifications of commercially available passive electronic components are not very tight.
  • the components pick and placement accuracy is also not as high as that of silicon dies. These two factors may cause the passive electronic components to be shifted or tilted after placement.
  • FIG. 3 illustrates a prior art electronic package 3 that includes a silicon die 4 embedded in a mold 5 .
  • the silicon die 4 is connected to passive electronic components 1 at a board 6 level.
  • FIG. 4 illustrates a prior art electronic package 6 that is at least partially formed using current eWLB processing technology.
  • the electronic package 6 includes passive electronic components 1 that are embedded in a mold 7 .
  • the passive electronic components 1 are interconnected to the silicon die (not shown in FIG. 4 ) using two buildup layers 8 A, 8 B and two metal layers 9 A, 9 B.
  • eWLB processing technology typically begins by assembling all passive electronic components on a temporary carrier tape (not shown). A molding compound (MC) is then placed over the passive electronic components to form the mold. Eventually, the silicon dies are assembled onto an opposing side of the built up substrate. The interconnection between the silicon die and the passive electronic components is accomplished through the buildup layers and the two metal layers.
  • MC molding compound
  • FIG. 1 shows typical morphology of a prior art SMT passive electronic component.
  • FIG. 2 shows some of the problematic issues associated with using prior art fabrication technology for embedding passive electronic components.
  • FIG. 3 illustrates a silicon die that is embedded in a mold and connected to passive electronic components at a board level using prior art fabrication techniques.
  • FIG. 4 illustrates a prior art electronic package that is at least partially formed using current eWLB processing technology.
  • FIG. 5 shows some of the benefits of the methods described herein that are associated with pick and place processing of passive electronic components when using SMT tools.
  • FIG. 6 illustrates one of the example electronic packages described herein.
  • FIG. 7 illustrates a flow diagram of an example method of forming an electronic package.
  • FIGS. 8A-F show corresponding assemblies for portions of the method shown in FIG. 7 .
  • FIG. 9 shows a comparison between the conventional eWLB process steps and the method shown in FIG. 7 .
  • FIG. 10 is a block diagram of an electronic device incorporating at least one electronic package and/or method described herein.
  • Orientation terminology such as “horizontal,” as used in this application is defined with respect to a plane parallel to the conventional plane or surface of a wafer or substrate, regardless of the orientation of the wafer or substrate.
  • the term “vertical” refers to a direction perpendicular to the horizontal as defined above.
  • Prepositions such as “on,” “side” (as in “sidewall”), “higher,” “lower,” “over,” and “under” are defined with respect to the conventional plane or surface being on the top surface of the wafer or substrate, regardless of the orientation of the wafer or substrate.
  • the electronic packages and methods described herein at least partially relate to relatively low-cost silicon packages that integrate low-cost commercially available passive components with less stringent dimensional and metal termination specifications (of thickness, roughness, radius of curvature, material, flatness, etc.). Therefore, the electronic packages and methods described herein may produce a relatively higher yield.
  • FIG. 5 shows some of the benefits that are associated with pick and place processing of passive electronic components when using SMT tools according to the methods described herein.
  • the electronic packages and methods described herein may correct all the process issues discussed above with some simple routing on the direct metal layer (e.g., larger lines and connection pads). In addition, the electronic packages and methods described herein may replace a more expensive semi additive metallization with a lower cost subtractive metallization step. The electronic packages and methods described herein may also provide a relative cost saving by utilizing standard passive metal termination without requiring extensive metal finishing (e.g., plating).
  • the electronic packages and methods described herein may not only eliminate two fabrication steps but at the same time improve fabrication yield by making robust metal connection directly with cheaper and more mature passive components (and not through a via opening as is done in conventional processes). Since the first metal layer is deposited or plated directly onto the exposed metal pads of the passive electronic components over the whole area of the molded wafer, a very robust metal connection to the passive electronic components may be created in the electronic packages and methods described herein. The interconnect yield may also be improved since there is no need to drill vias through the buildup layer.
  • the electronic packages and methods described herein may also have the potential to reduce size in x, y and z dimensions of the electronic package. This reduction in the size of the electronic package may (i) reduce form factor; and/or (ii) improve RF performance due to shorter interconnects between Radio receiver types chips and passive electronic components.
  • the electronic packages and methods described herein may integrate ICs and other electronic components (active and passives) in a small form factor RF package using eWLB technology.
  • all RF passive components are first placed on a temporary carrier tape and molded using a molding compound (MC).
  • MC molding compound
  • the ICs may then be soldered on the eWLB package after the full buildup and reflow.
  • the interconnection between the IC and passives may be done using two metal layers.
  • the electronic package may be connected to a ball grid array (BGA) using the top metal layer.
  • BGA ball grid array
  • the bottom metal layer may provide some local routing, grounding, and interconnection to the rough metal conductors of the passive electronic components.
  • the electronic packages and methods described herein may allow for integration of a large number of passive electronic components in a very small form factor electronic package.
  • a large number of passive electronic components may be needed for RF subsystems and associated ICs (like RF transceivers with a large number of I/Os).
  • a large number of passive electronic components may be needed for different types of mobile devices (e.g., phones, tablets, etc.).
  • the electronic packages and methods described herein may also be used for wearable electronic devices and other small form factor devices.
  • FIG. 6 illustrates one of the example electronic packages 10 described herein.
  • the electronic package 10 includes a mold 11 that includes at least one passive component 12 (see also FIG. 8A ).
  • Each of the passive components 12 include electric conductors 13 that are exposed from the mold 11 .
  • the electronic package 10 further includes a first conductive layer 15 that is directly attached to the mold 11 such that the conductive layer 15 touches the mold 11 and the electrical conductors 13 that are exposed from the mold 11 (see also FIG. 8B ).
  • the mold 11 may further include at least one active component (not shown).
  • Each of the active components may include electric conductors that are exposed from the mold 11 and touch the conductive layer 15 .
  • the type of passive and/or active components that are included in the mold 11 will depend in part on the overall desired configuration and function of the electronic package 10 .
  • the conductive layer 15 may be a patterned first conductive layer 15 .
  • the patterned first conductive layer 15 may be configured such that the patterned first conductive layer 15 engages the electric conductors 13 that are exposed from the mold 11 (see also FIG. 8C ).
  • the electronic package 10 may further include a patterned buildup layer 16 covering the patterned first conductive layer 15 (see also FIG. 8D ).
  • the patterned buildup layer 16 may be formed of a polyamide, epoxy, PBO (Polybenzoxozoles), BCB (Benzocyclobutene), or any other material that is known now or discovered in the future.
  • the type of material that is used for the patterned buildup layer 16 will depend in part on cost, manufacturing considerations and the functionality associated with fabricating the electronic package 10 (among other factors).
  • the electronic package 10 may further include a patterned second conductive layer 17 that covers the patterned buildup layer 16 and fills openings 18 ( FIG. 8D ) in the patterned buildup layer 16 such that the patterned second conductive layer 17 is electrically connected to the patterned first conductive layer 15 (see also FIG. 8E ).
  • the first and/or second conductive layers 15 , 17 may be made of gold, although any suitable electrical conductor may be used.
  • the type of material that is used for the first and/or second conductive layers 15 , 17 will depend in part on cost, manufacturing considerations and the functionality associated with fabricating the electronic package 10 (among other factors).
  • the electronic package 10 may further include a patterned solder resist 19 that covers the patterned second conductive layer 17 (see also FIG. 8F ). As shown in FIG. 6 , the plurality of electrical contacts 20 may extend through the patterned solder resist 19 such that the plurality of electrical contacts 20 are electrically connected to the patterned second conductive layer 17 .
  • the electrical contacts 20 may be a conductive pad, although any suitable type of electrical contact may be used (e.g., solder bumps conductive paste, anisotropic conductive organic, etc.).
  • the type of electrical contact 20 that is used in the electronic package 10 will depend in part on cost, manufacturing considerations and the functionality associated with fabricating the electronic package 10 (among other factors).
  • the electronic package 10 may further include a die (not shown in FIG. 6 ) that is attached to at least some of the plurality of electrical contacts 20 .
  • the type of die that is used in the electronic package 10 and the manner in which the die is attached to at least some of the plurality of electrical contacts 20 , will depend in part on cost, manufacturing considerations and the functionality associated with fabricating the electronic package 10 (among other factors).
  • FIG. 7 illustrates a flow diagram of an example method [ 700 ] of forming an electronic package 10 .
  • FIGS. 8A-F show corresponding assemblies for portions of the method [ 700 ] shown in FIG. 7 .
  • the method [ 700 ] includes [ 710 ] removing a temporary carrier with temporary adhesive (not shown) from a mold 11 that includes electronic devices 12 (e.g., passive and active electronic components). Electric conductors 13 on the electronic devices 12 are exposed once the temporary carrier with the temporary adhesive is removed from the mold 11 (see FIG. 8A ).
  • the method [ 700 ] further includes [ 720 ] covering the mold 11 with a first conductive layer 15 .
  • the first conductive layer 15 covers the mold 11 and is electrically connected to the exposed electric conductors 13 on the electronic devices 12 (see FIG. 8B ).
  • the first conductive layer 15 may be attached to the mold 11 using plating (or some other type of deposition) without using a mask directly onto the surface of eWLB wafers that include passive electronic devices 12 embedded in the eWLB wafers.
  • the passive electronic devices 12 may (i) have different surface finishes; (ii) be formed of different material; and/or (iii) be different heights from the surface of the eWLB wafer.
  • pulse plating the first conductive layer 15 onto the mold 11 may be used to overcome one or more of these differences.
  • Example passive electronic devices 12 include resistor, capacitors, inductors and/or integrated passive devices.
  • Attaching the first conductive layer 15 directly to the mold 11 may reduce the effect of these differences thereby improving electrical interconnections within the electronic package 10 .
  • attaching the first conductive layer 15 directly to the mold 11 may serve to overcome tilting during poor pick-and-place assembly operation as well as the sometimes overly variable dimensions of some passive electronic devices 12 .
  • the method [ 700 ] may further include [ 730 ] patterning the first conductive layer 15 (see FIG. 8C ). It should be noted the first conductive layer 15 may be patterned any manner (e.g., etching) that is known or discovered in the future.
  • the method [ 700 ] may further include [ 740 ] covering the patterned first conductive layer 15 with a buildup layer 16 , and [ 750 ] patterning the buildup layer 16 to form openings 18 in the buildup layer 16 (see FIG. 8D ).
  • the method [ 700 ] may further include [ 760 ] covering the patterned buildup layer 16 with a second conductive layer 17 .
  • the second conductive layer 17 fills the openings in the patterned buildup layer 16 to electrically connect the second conductive layer 17 to the first conductive layer 15 .
  • the method [ 700 ] may also include [ 770 ] patterning the second conductive layer (see FIG. 8E ).
  • the method [ 700 ] may further include [ 780 ] covering the patterned second conductive layer 17 with a solder resist 19 , and [ 790 ] patterning the solder resist 19 to form openings in the solder resist 19 (see FIG. 8F ).
  • the method [ 700 ] may further include [ 792 ] placing electrical contacts 20 within the openings in the solder resist 19 .
  • the electrical contacts 20 are electrically connected to the patterned second conductive layer 17 (as shown in FIG. 6 ).
  • the method [ 700 ] may further include [ 794 ] attaching a die to at least some of the electrical contacts 20 . Therefore, the die is electrically connected to the patterned second conductive layer 17 (as shown in FIG. 6 ).
  • the interconnection between the die and the passive electronic devices 12 is accomplished with two conductive layers 15 , 17 where the lower conductive layer 15 is deposited on an eWLB substrate directly (i.e., without having to use an extra buildup layer).
  • the fan-out electrical connection to a BGA 22 is also done using the same conductive layers 15 , 17 .
  • the electronic package 10 and methods describe herein may reduce package cost by eliminating two fabrication steps used a conventional eWLB process (see FIG. 9 ): (i) buildup layer deposition over the mold layer; and (ii) drilling of vias through the buildup layer to make routing to other components.
  • FIG. 10 is a block diagram of an electronic apparatus 1000 incorporating at least one electronic package and/or method described herein.
  • Electronic apparatus 1000 is merely one example of an electronic system in which embodiments of the present invention can be used. Examples of electronic apparatuses 1000 include, but are not limited to personal computers, tablet computers, mobile telephones, game devices, MP3 or other digital music players, etc.
  • electronic apparatus 1000 comprises a data processing system that includes a system bus 1002 to couple the various components of the system.
  • System bus 1002 provides communications links among the various components of the electronic apparatus 1000 and can be implemented as a single bus, as a combination of busses, or in any other suitable manner.
  • An electronic package 1010 is coupled to system bus 1002 .
  • the electronic package 1010 can include any circuit or combination of circuits.
  • the electronic package 1010 includes a processor 1012 which can be of any type.
  • processor means any type of computational circuit, such as but not limited to a microprocessor, a microcontroller, a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, a graphics processor, a digital signal processor (DSP), multiple core processor, or any other type of processor or processing circuit.
  • CISC complex instruction set computing
  • RISC reduced instruction set computing
  • VLIW very long instruction word
  • DSP digital signal processor
  • circuits that can be included in electronic package 1010 are a custom circuit, an application-specific integrated circuit (ASIC), or the like, such as, for example, one or more circuits (such as a communications circuit 1014 ) for use in wireless devices like mobile telephones, tablet computers, laptop computers, two-way radios, and similar electronic systems.
  • ASIC application-specific integrated circuit
  • the IC can perform any other type of function.
  • the electronic apparatus 1000 can also include an external memory 1020 , which in turn can include one or more memory elements suitable to the particular application, such as a main memory 1022 in the form of random access memory (RAM), one or more hard drives 1024 , and/or one or more drives that handle removable media 1026 such as compact disks (CD), flash memory cards, digital video disk (DVD), and the like.
  • a main memory 1022 in the form of random access memory (RAM)
  • RAM random access memory
  • hard drives 1024 e.g., hard drives, and/or one or more drives that handle removable media 1026 such as compact disks (CD), flash memory cards, digital video disk (DVD), and the like.
  • removable media 1026 such as compact disks (CD), flash memory cards, digital video disk (DVD), and the like.
  • the electronic apparatus 1000 can also include a display device 1016 , one or more speakers 1018 , and a keyboard and/or controller 1030 , which can include a mouse, trackball, touch screen, voice-recognition device, or any other device that permits a system user to input information into and receive information from the electronic apparatus 1000 .
  • Example 1 includes an electronic package that includes a mold that includes at least one passive component, each of the passive components including electric conductors that are exposed from the mold, and a first conductive layer directly attached to the mold such that the conductive layer touches the mold and the electrical conductors that are exposed from the mold.
  • Example 2 includes the electronic package of example 1, wherein the mold further includes at least one active component, each of the active components including electric conductors that are exposed from the mold and touch the conductive layer.
  • Example 3 includes the electronic package of any one of examples 1-2, wherein the at least one active component is a die.
  • Example 4 includes the electronic package of any one of examples 1-3, wherein the conductive layer is a patterned first conductive layer.
  • Example 5 includes the electronic package of any one of examples 1-4, and further including a patterned buildup layer covering the patterned first conductive layer.
  • Example 6 includes the electronic package of any one of examples 1-5, wherein the patterned buildup layer is formed of a polyamide epoxy.
  • Example 7 includes the electronic package of any one of examples 1-6, and further including a patterned second conductive layer that covers the patterned buildup layer and fills openings in the patterned buildup layer such that the patterned second conductive layer is electrically connected to the patterned first conductive layer.
  • Example 8 includes the electronic package of any one of examples 1-7, wherein the patterned first conductive layer and the patterned second conductive layer are copper.
  • Example 9 includes the electronic package of any one of examples 1-8, and further including a patterned solder resist covering the patterned second conductive layer.
  • Example 10 the electronic package of any one of examples 1-9, and further including a plurality of electrical contacts extending through the patterned solder resist such that the plurality of electrical contacts are electrically connected to the patterned second conductive layer.
  • Example 11 includes the electronic package of any one of examples 1-10, wherein the plurality of electrical contacts includes conductive pads.
  • Example 12 includes the electronic package of any one of examples 1-11, and further including a die attached to at least some of the plurality of electrical contacts.
  • Example 13 includes a method that includes removing a temporary carrier from a mold that includes electronic devices, wherein electric conductors on the electronic devices are exposed once the temporary carrier is removed from the mold, and covering the mold with a first conductive layer such that the first conductive layer covers the mold and is electrically connected to the exposed electric conductors on the electronic devices.
  • Example 14 includes the method of example 13, and further including patterning the first conductive layer.
  • Example 15 includes the method of any one of examples 13-14, and further including covering the patterned first conductive layer with a buildup layer; and patterning the buildup layer to form openings in the buildup layer.
  • Example 16 includes the method of any one of examples 13-15, and further including covering the buildup layer with a second conductive layer such that the second conductive layer fills the openings in the buildup layer to electrically connect the second conductive layer to the first conductive layer.
  • Example 17 includes the method of any one of examples 13-16, and further including patterning the second conductive layer, covering the patterned second conductive layer with a solder resist, and patterning the solder resist to form openings in the solder resist.
  • Example 18 includes the method of examples 13-17, and further including placing electrical contacts within the openings in the solder resist such that the electrical contacts are electrically connected to the patterned second conductive layer.
  • Example 19 includes the method of any one of examples 13-18, and further including attaching a die to at least some of the electrical contacts such that the die is electrically connected to the patterned second conductive layer.
  • Example 20 includes a method that includes removing a temporary carrier from a mold that includes an active electronic device and a passive electronic device, wherein electric conductors on the active electronic device and the passive electronic device are exposed once the temporary carrier is removed from the mold, covering the mold with a first conductive layer such that the first conductive layer covers the mold and is electrically connected to the exposed electric conductors on the active electronic device and the passive electronic device, patterning the first conductive layer, covering the patterned first conductive layer with a buildup layer, patterning the buildup layer to form openings in the buildup layer, covering the buildup layer with a second conductive layer such that the second conductive layer fills the openings in the buildup layer to electrically connect the second conductive layer to the first conductive layer, patterning the second conductive layer, covering the patterned second conductive layer with a solder resist, patterning the solder to form openings in the solder resist, placing electrical contacts within the openings in the solder resist such that the electrical contacts are electrically connected to the patterned second conductive layer,
  • the terms “a” or “an” are used, as is common in patent documents, to include one or more than one, independent of any other instances or usages of “at least one” or “one or more.”
  • the term “or” is used to refer to a nonexclusive or, such that “A or B” includes “A but not B,” “B but not A,” and “A and B,” unless otherwise indicated.

Abstract

An electronic package that includes a mold that includes at least one passive component, each of the passive components including electric conductors that are exposed from the mold, and a first conductive layer directly attached to the mold such that the conductive layer touches the mold and the electrical conductors that are exposed from the mold. A method that includes removing a temporary carrier from a mold that includes electronic devices, wherein electric conductors on the electronic devices are exposed once the temporary carrier is removed from the mold, and covering the mold with a first conductive layer such that the first conductive layer covers the mold and is electrically connected to the exposed electric conductors on the electronic devices.

Description

    TECHNICAL FIELD
  • Embodiments described herein generally relate to an electronic package and methods of forming an electronic package.
  • BACKGROUND
  • Surface-mount (SMT) passive components are a high volume commodity in the electronic component industry today. FIG. 1 shows the typical surface morphology of a SMT passive electronic component 1.
  • Conventional SMT passive components are typically produced with a relatively less stringent dimensional accuracy. In addition, the conductors 2 on conventional SMT passive components typically have a rough surface finish with solder.
  • One of the manufacturing issues associated with using conventional SMT passive components are that the passive components don't have good dimensional accuracy and the component placement accuracy of existing SMT pick and place machines (such as chip shooters), which are used for the passive component placement with high throughput, is not sufficient to make reliable metal-to-metal connection when a traditional embedded wafer level ball grid array (eWLB) process is used to embed passive components in the molding compound.
  • FIG. 2 shows one of the problematic issues associated with using traditional fabrication technology for embedding passive electronic components. As discussed above, the surface finish of the conductors (e.g., metal pads) on a typical passive electronic component is much worse than that on a typical silicon device. This rough finish surface finish and poor dimensional accuracy may cause an unacceptable level of surface contamination risk on the conductors of a passive electronic component. In some cases, even clean metal pads might have a finish that is too rough or have a different metallization that is not robust enough to maintain integrity or have surface contamination through the buildup process.
  • As discussed above, the dimensional specifications of commercially available passive electronic components are not very tight. In addition, the components pick and placement accuracy is also not as high as that of silicon dies. These two factors may cause the passive electronic components to be shifted or tilted after placement.
  • FIG. 3 illustrates a prior art electronic package 3 that includes a silicon die 4 embedded in a mold 5. The silicon die 4 is connected to passive electronic components 1 at a board 6 level.
  • FIG. 4 illustrates a prior art electronic package 6 that is at least partially formed using current eWLB processing technology. The electronic package 6 includes passive electronic components 1 that are embedded in a mold 7. The passive electronic components 1 are interconnected to the silicon die (not shown in FIG. 4) using two buildup layers 8A, 8B and two metal layers 9A, 9B.
  • Current eWLB processing technology typically begins by assembling all passive electronic components on a temporary carrier tape (not shown). A molding compound (MC) is then placed over the passive electronic components to form the mold. Eventually, the silicon dies are assembled onto an opposing side of the built up substrate. The interconnection between the silicon die and the passive electronic components is accomplished through the buildup layers and the two metal layers.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 shows typical morphology of a prior art SMT passive electronic component.
  • FIG. 2 shows some of the problematic issues associated with using prior art fabrication technology for embedding passive electronic components.
  • FIG. 3 illustrates a silicon die that is embedded in a mold and connected to passive electronic components at a board level using prior art fabrication techniques.
  • FIG. 4 illustrates a prior art electronic package that is at least partially formed using current eWLB processing technology.
  • FIG. 5 shows some of the benefits of the methods described herein that are associated with pick and place processing of passive electronic components when using SMT tools.
  • FIG. 6 illustrates one of the example electronic packages described herein.
  • FIG. 7 illustrates a flow diagram of an example method of forming an electronic package.
  • FIGS. 8A-F show corresponding assemblies for portions of the method shown in FIG. 7.
  • FIG. 9 shows a comparison between the conventional eWLB process steps and the method shown in FIG. 7.
  • FIG. 10 is a block diagram of an electronic device incorporating at least one electronic package and/or method described herein.
  • DESCRIPTION OF EMBODIMENTS
  • The following description and the drawings sufficiently illustrate specific embodiments to enable those skilled in the art to practice them. Other embodiments may incorporate structural, logical, electrical, process, and other changes. Portions and features of some embodiments may be included in, or substituted for, those of other embodiments. Embodiments set forth in the claims encompass all available equivalents of those claims.
  • Orientation terminology, such as “horizontal,” as used in this application is defined with respect to a plane parallel to the conventional plane or surface of a wafer or substrate, regardless of the orientation of the wafer or substrate. The term “vertical” refers to a direction perpendicular to the horizontal as defined above. Prepositions, such as “on,” “side” (as in “sidewall”), “higher,” “lower,” “over,” and “under” are defined with respect to the conventional plane or surface being on the top surface of the wafer or substrate, regardless of the orientation of the wafer or substrate.
  • The electronic packages and methods described herein at least partially relate to relatively low-cost silicon packages that integrate low-cost commercially available passive components with less stringent dimensional and metal termination specifications (of thickness, roughness, radius of curvature, material, flatness, etc.). Therefore, the electronic packages and methods described herein may produce a relatively higher yield.
  • FIG. 5 shows some of the benefits that are associated with pick and place processing of passive electronic components when using SMT tools according to the methods described herein.
  • Current eWLB processing technology is primarily employed in order to fan out silicon ICs (e.g., dies). The electronic packages and methods described herein may correct all the process issues discussed above with some simple routing on the direct metal layer (e.g., larger lines and connection pads). In addition, the electronic packages and methods described herein may replace a more expensive semi additive metallization with a lower cost subtractive metallization step. The electronic packages and methods described herein may also provide a relative cost saving by utilizing standard passive metal termination without requiring extensive metal finishing (e.g., plating).
  • In addition, the electronic packages and methods described herein may not only eliminate two fabrication steps but at the same time improve fabrication yield by making robust metal connection directly with cheaper and more mature passive components (and not through a via opening as is done in conventional processes). Since the first metal layer is deposited or plated directly onto the exposed metal pads of the passive electronic components over the whole area of the molded wafer, a very robust metal connection to the passive electronic components may be created in the electronic packages and methods described herein. The interconnect yield may also be improved since there is no need to drill vias through the buildup layer.
  • The electronic packages and methods described herein may also have the potential to reduce size in x, y and z dimensions of the electronic package. This reduction in the size of the electronic package may (i) reduce form factor; and/or (ii) improve RF performance due to shorter interconnects between Radio receiver types chips and passive electronic components.
  • In some forms, the electronic packages and methods described herein may integrate ICs and other electronic components (active and passives) in a small form factor RF package using eWLB technology. In some forms, all RF passive components are first placed on a temporary carrier tape and molded using a molding compound (MC).
  • The ICs may then be soldered on the eWLB package after the full buildup and reflow. The interconnection between the IC and passives may be done using two metal layers. In addition, the electronic package may be connected to a ball grid array (BGA) using the top metal layer. The bottom metal layer may provide some local routing, grounding, and interconnection to the rough metal conductors of the passive electronic components.
  • Therefore, the electronic packages and methods described herein may allow for integration of a large number of passive electronic components in a very small form factor electronic package. As an example, a large number of passive electronic components may be needed for RF subsystems and associated ICs (like RF transceivers with a large number of I/Os). As another example, a large number of passive electronic components may be needed for different types of mobile devices (e.g., phones, tablets, etc.). The electronic packages and methods described herein may also be used for wearable electronic devices and other small form factor devices.
  • FIG. 6 illustrates one of the example electronic packages 10 described herein. The electronic package 10 includes a mold 11 that includes at least one passive component 12 (see also FIG. 8A). Each of the passive components 12 include electric conductors 13 that are exposed from the mold 11. The electronic package 10 further includes a first conductive layer 15 that is directly attached to the mold 11 such that the conductive layer 15 touches the mold 11 and the electrical conductors 13 that are exposed from the mold 11 (see also FIG. 8B).
  • In some forms of the electronic package 10, the mold 11 may further include at least one active component (not shown). Each of the active components may include electric conductors that are exposed from the mold 11 and touch the conductive layer 15. The type of passive and/or active components that are included in the mold 11 will depend in part on the overall desired configuration and function of the electronic package 10.
  • It should be noted that the conductive layer 15 may be a patterned first conductive layer 15. The patterned first conductive layer 15 may be configured such that the patterned first conductive layer 15 engages the electric conductors 13 that are exposed from the mold 11 (see also FIG. 8C).
  • The electronic package 10 may further include a patterned buildup layer 16 covering the patterned first conductive layer 15 (see also FIG. 8D). The patterned buildup layer 16 may be formed of a polyamide, epoxy, PBO (Polybenzoxozoles), BCB (Benzocyclobutene), or any other material that is known now or discovered in the future. The type of material that is used for the patterned buildup layer 16 will depend in part on cost, manufacturing considerations and the functionality associated with fabricating the electronic package 10 (among other factors).
  • The electronic package 10 may further include a patterned second conductive layer 17 that covers the patterned buildup layer 16 and fills openings 18 (FIG. 8D) in the patterned buildup layer 16 such that the patterned second conductive layer 17 is electrically connected to the patterned first conductive layer 15 (see also FIG. 8E). As an example, the first and/or second conductive layers 15, 17 may be made of gold, although any suitable electrical conductor may be used. The type of material that is used for the first and/or second conductive layers 15, 17 will depend in part on cost, manufacturing considerations and the functionality associated with fabricating the electronic package 10 (among other factors).
  • The electronic package 10 may further include a patterned solder resist 19 that covers the patterned second conductive layer 17 (see also FIG. 8F). As shown in FIG. 6, the plurality of electrical contacts 20 may extend through the patterned solder resist 19 such that the plurality of electrical contacts 20 are electrically connected to the patterned second conductive layer 17.
  • As an example, the electrical contacts 20 may be a conductive pad, although any suitable type of electrical contact may be used (e.g., solder bumps conductive paste, anisotropic conductive organic, etc.). The type of electrical contact 20 that is used in the electronic package 10 will depend in part on cost, manufacturing considerations and the functionality associated with fabricating the electronic package 10 (among other factors).
  • In addition, the electronic package 10 may further include a die (not shown in FIG. 6) that is attached to at least some of the plurality of electrical contacts 20. The type of die that is used in the electronic package 10, and the manner in which the die is attached to at least some of the plurality of electrical contacts 20, will depend in part on cost, manufacturing considerations and the functionality associated with fabricating the electronic package 10 (among other factors).
  • FIG. 7 illustrates a flow diagram of an example method [700] of forming an electronic package 10. FIGS. 8A-F show corresponding assemblies for portions of the method [700] shown in FIG. 7.
  • The method [700] includes [710] removing a temporary carrier with temporary adhesive (not shown) from a mold 11 that includes electronic devices 12 (e.g., passive and active electronic components). Electric conductors 13 on the electronic devices 12 are exposed once the temporary carrier with the temporary adhesive is removed from the mold 11 (see FIG. 8A).
  • The method [700] further includes [720] covering the mold 11 with a first conductive layer 15. The first conductive layer 15 covers the mold 11 and is electrically connected to the exposed electric conductors 13 on the electronic devices 12 (see FIG. 8B).
  • The first conductive layer 15 may be attached to the mold 11 using plating (or some other type of deposition) without using a mask directly onto the surface of eWLB wafers that include passive electronic devices 12 embedded in the eWLB wafers. The passive electronic devices 12 may (i) have different surface finishes; (ii) be formed of different material; and/or (iii) be different heights from the surface of the eWLB wafer. In some forms of the method [700], pulse plating the first conductive layer 15 onto the mold 11 may be used to overcome one or more of these differences. Example passive electronic devices 12 include resistor, capacitors, inductors and/or integrated passive devices.
  • Attaching the first conductive layer 15 directly to the mold 11 may reduce the effect of these differences thereby improving electrical interconnections within the electronic package 10. In addition, attaching the first conductive layer 15 directly to the mold 11 may serve to overcome tilting during poor pick-and-place assembly operation as well as the sometimes overly variable dimensions of some passive electronic devices 12.
  • The method [700] may further include [730] patterning the first conductive layer 15 (see FIG. 8C). It should be noted the first conductive layer 15 may be patterned any manner (e.g., etching) that is known or discovered in the future.
  • The method [700] may further include [740] covering the patterned first conductive layer 15 with a buildup layer 16, and [750] patterning the buildup layer 16 to form openings 18 in the buildup layer 16 (see FIG. 8D).
  • The method [700] may further include [760] covering the patterned buildup layer 16 with a second conductive layer 17. The second conductive layer 17 fills the openings in the patterned buildup layer 16 to electrically connect the second conductive layer 17 to the first conductive layer 15. The method [700] may also include [770] patterning the second conductive layer (see FIG. 8E).
  • The method [700] may further include [780] covering the patterned second conductive layer 17 with a solder resist 19, and [790] patterning the solder resist 19 to form openings in the solder resist 19 (see FIG. 8F).
  • The method [700] may further include [792] placing electrical contacts 20 within the openings in the solder resist 19. The electrical contacts 20 are electrically connected to the patterned second conductive layer 17 (as shown in FIG. 6).
  • The method [700] may further include [794] attaching a die to at least some of the electrical contacts 20. Therefore, the die is electrically connected to the patterned second conductive layer 17 (as shown in FIG. 6).
  • The interconnection between the die and the passive electronic devices 12 is accomplished with two conductive layers 15, 17 where the lower conductive layer 15 is deposited on an eWLB substrate directly (i.e., without having to use an extra buildup layer). The fan-out electrical connection to a BGA 22 is also done using the same conductive layers 15, 17.
  • Therefore, the electronic package 10 and methods describe herein may reduce package cost by eliminating two fabrication steps used a conventional eWLB process (see FIG. 9): (i) buildup layer deposition over the mold layer; and (ii) drilling of vias through the buildup layer to make routing to other components.
  • An example of an electronic package and methods as described in the present disclosure is included to show an example of a higher level application for the electronic package and methods. FIG. 10 is a block diagram of an electronic apparatus 1000 incorporating at least one electronic package and/or method described herein. Electronic apparatus 1000 is merely one example of an electronic system in which embodiments of the present invention can be used. Examples of electronic apparatuses 1000 include, but are not limited to personal computers, tablet computers, mobile telephones, game devices, MP3 or other digital music players, etc. In this example, electronic apparatus 1000 comprises a data processing system that includes a system bus 1002 to couple the various components of the system. System bus 1002 provides communications links among the various components of the electronic apparatus 1000 and can be implemented as a single bus, as a combination of busses, or in any other suitable manner.
  • An electronic package 1010 is coupled to system bus 1002. The electronic package 1010 can include any circuit or combination of circuits. In one embodiment, the electronic package 1010 includes a processor 1012 which can be of any type. As used herein, “processor” means any type of computational circuit, such as but not limited to a microprocessor, a microcontroller, a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, a graphics processor, a digital signal processor (DSP), multiple core processor, or any other type of processor or processing circuit.
  • Other types of circuits that can be included in electronic package 1010 are a custom circuit, an application-specific integrated circuit (ASIC), or the like, such as, for example, one or more circuits (such as a communications circuit 1014) for use in wireless devices like mobile telephones, tablet computers, laptop computers, two-way radios, and similar electronic systems. The IC can perform any other type of function.
  • The electronic apparatus 1000 can also include an external memory 1020, which in turn can include one or more memory elements suitable to the particular application, such as a main memory 1022 in the form of random access memory (RAM), one or more hard drives 1024, and/or one or more drives that handle removable media 1026 such as compact disks (CD), flash memory cards, digital video disk (DVD), and the like.
  • The electronic apparatus 1000 can also include a display device 1016, one or more speakers 1018, and a keyboard and/or controller 1030, which can include a mouse, trackball, touch screen, voice-recognition device, or any other device that permits a system user to input information into and receive information from the electronic apparatus 1000.
  • To better illustrate the method and apparatuses disclosed herein, a non-limiting list of embodiments is provided here:
  • Example 1 includes an electronic package that includes a mold that includes at least one passive component, each of the passive components including electric conductors that are exposed from the mold, and a first conductive layer directly attached to the mold such that the conductive layer touches the mold and the electrical conductors that are exposed from the mold.
  • Example 2 includes the electronic package of example 1, wherein the mold further includes at least one active component, each of the active components including electric conductors that are exposed from the mold and touch the conductive layer.
  • Example 3 includes the electronic package of any one of examples 1-2, wherein the at least one active component is a die.
  • Example 4 includes the electronic package of any one of examples 1-3, wherein the conductive layer is a patterned first conductive layer.
  • Example 5 includes the electronic package of any one of examples 1-4, and further including a patterned buildup layer covering the patterned first conductive layer.
  • Example 6 includes the electronic package of any one of examples 1-5, wherein the patterned buildup layer is formed of a polyamide epoxy.
  • Example 7 includes the electronic package of any one of examples 1-6, and further including a patterned second conductive layer that covers the patterned buildup layer and fills openings in the patterned buildup layer such that the patterned second conductive layer is electrically connected to the patterned first conductive layer.
  • Example 8 includes the electronic package of any one of examples 1-7, wherein the patterned first conductive layer and the patterned second conductive layer are copper.
  • Example 9 includes the electronic package of any one of examples 1-8, and further including a patterned solder resist covering the patterned second conductive layer.
  • Example 10 the electronic package of any one of examples 1-9, and further including a plurality of electrical contacts extending through the patterned solder resist such that the plurality of electrical contacts are electrically connected to the patterned second conductive layer.
  • Example 11 includes the electronic package of any one of examples 1-10, wherein the plurality of electrical contacts includes conductive pads.
  • Example 12 includes the electronic package of any one of examples 1-11, and further including a die attached to at least some of the plurality of electrical contacts.
  • Example 13 includes a method that includes removing a temporary carrier from a mold that includes electronic devices, wherein electric conductors on the electronic devices are exposed once the temporary carrier is removed from the mold, and covering the mold with a first conductive layer such that the first conductive layer covers the mold and is electrically connected to the exposed electric conductors on the electronic devices.
  • Example 14 includes the method of example 13, and further including patterning the first conductive layer.
  • Example 15 includes the method of any one of examples 13-14, and further including covering the patterned first conductive layer with a buildup layer; and patterning the buildup layer to form openings in the buildup layer.
  • Example 16 includes the method of any one of examples 13-15, and further including covering the buildup layer with a second conductive layer such that the second conductive layer fills the openings in the buildup layer to electrically connect the second conductive layer to the first conductive layer.
  • Example 17 includes the method of any one of examples 13-16, and further including patterning the second conductive layer, covering the patterned second conductive layer with a solder resist, and patterning the solder resist to form openings in the solder resist.
  • Example 18 includes the method of examples 13-17, and further including placing electrical contacts within the openings in the solder resist such that the electrical contacts are electrically connected to the patterned second conductive layer.
  • Example 19 includes the method of any one of examples 13-18, and further including attaching a die to at least some of the electrical contacts such that the die is electrically connected to the patterned second conductive layer.
  • Example 20 includes a method that includes removing a temporary carrier from a mold that includes an active electronic device and a passive electronic device, wherein electric conductors on the active electronic device and the passive electronic device are exposed once the temporary carrier is removed from the mold, covering the mold with a first conductive layer such that the first conductive layer covers the mold and is electrically connected to the exposed electric conductors on the active electronic device and the passive electronic device, patterning the first conductive layer, covering the patterned first conductive layer with a buildup layer, patterning the buildup layer to form openings in the buildup layer, covering the buildup layer with a second conductive layer such that the second conductive layer fills the openings in the buildup layer to electrically connect the second conductive layer to the first conductive layer, patterning the second conductive layer, covering the patterned second conductive layer with a solder resist, patterning the solder to form openings in the solder resist, placing electrical contacts within the openings in the solder resist such that the electrical contacts are electrically connected to the patterned second conductive layer, and attaching a die to at least some of the electrical contacts such that the die is electrically connected to the patterned second conductive layer.
  • This overview is intended to provide non-limiting examples of the present subject matter—it is not intended to provide an exclusive or exhaustive explanation. The detailed description is included to provide further information about the methods.
  • The above detailed description includes references to the accompanying drawings, which form a part of the detailed description. The drawings show, by way of illustration, specific embodiments in which the invention can be practiced. These embodiments are also referred to herein as “examples.” Such examples can include elements in addition to those shown or described. However, the present inventors also contemplate examples in which only those elements shown or described are provided. Moreover, the present inventors also contemplate examples using any combination or permutation of those elements shown or described (or one or more aspects thereof), either with respect to a particular example (or one or more aspects thereof), or with respect to other examples (or one or more aspects thereof) shown or described herein.
  • In this document, the terms “a” or “an” are used, as is common in patent documents, to include one or more than one, independent of any other instances or usages of “at least one” or “one or more.” In this document, the term “or” is used to refer to a nonexclusive or, such that “A or B” includes “A but not B,” “B but not A,” and “A and B,” unless otherwise indicated. In this document, the terms “including” and “in which” are used as the plain-English equivalents of the respective terms “comprising” and “wherein.” Also, in the following claims, the terms “including” and “comprising” are open-ended, that is, a system, device, article, composition, formulation, or process that includes elements in addition to those listed after such a term in a claim are still deemed to fall within the scope of that claim. Moreover, in the following claims, the terms “first,” “second,” and “third,” etc. are used merely as labels, and are not intended to impose numerical requirements on their objects.
  • The above description is intended to be illustrative, and not restrictive. For example, the above-described examples (or one or more aspects thereof) may be used in combination with each other. Other embodiments can be used, such as by one of ordinary skill in the art upon reviewing the above description.
  • The Abstract is provided to comply with 37 C.F.R. §1.72(b), to allow the reader to quickly ascertain the nature of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
  • Also, in the above Detailed Description, various features may be grouped together to streamline the disclosure. This should not be interpreted as intending that an unclaimed disclosed feature is essential to any claim. Rather, inventive subject matter may lie in less than all features of a particular disclosed embodiment. Thus, the following claims are hereby incorporated into the Detailed Description, with each claim standing on its own as a separate embodiment, and it is contemplated that such embodiments can be combined with each other in various combinations or permutations. The scope of the invention should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.

Claims (14)

1. An electronic package, comprising:
a mold that includes at least one passive component, each of the passive components including electric conductors that are exposed from the mold; and
a first conductive layer directly attached to the mold such that the conductive layer touches the mold and the electrical conductors that are exposed from the mold.
2. The electronic package of claim 1, wherein the mold further includes at least one active component, each of the active components including electric conductors that are exposed from the mold and touch the conductive layer.
3. The electronic package of claim 1, wherein the at least one active component die.
4. The electronic package of claim 1, wherein the conductive layer is a patterned first conductive layer.
5. The electronic package of claim 4, further comprising a patterned buildup layer covering the patterned first conductive layer.
6. The electronic package of claim 5, herein the patterned buildup layer is formed of a polyamide epoxy.
7. The electronic package of claim 5, further comprising a patterned second conductive layer that covers the patterned buildup layer and fills openings in the patterned buildup layer such that the patterned second conductive layer is electrically connected to the patterned first conductive layer.
8. The electronic package of claim 7, wherein the patterned first conductive layer and the patterned second conductive layer are copper.
9. The electronic package of claim 7, further comprising a patterned solder resist covering the patterned second conductive layer.
10. The electronic package of claim 9, further comprising a plurality of electrical contacts extending through the patterned solder resist such that the plurality of electrical contacts are electrically connected to the patterned second conductive layer.
11. The electronic package of claim 10, wherein the plurality of electrical contacts includes conductive pads.
12. The electronic package of claim 10, further comprising a die attached to at least some of the plurality of electrical contacts.
13. A method, comprising:
removing a temporary carrier from a mold that includes electronic devices, wherein electric conductors on the electronic devices are exposed once the temporary carrier is removed from the mold; and
covering the mold with a first conductive layer such that the first conductive layer covers the mold and is electrically connected to the exposed electric conductors on the electronic devices.
14-20. (canceled)
US14/228,685 2014-03-28 2014-03-28 Electronic package and method of forming an electronic package Abandoned US20150279824A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/228,685 US20150279824A1 (en) 2014-03-28 2014-03-28 Electronic package and method of forming an electronic package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/228,685 US20150279824A1 (en) 2014-03-28 2014-03-28 Electronic package and method of forming an electronic package

Publications (1)

Publication Number Publication Date
US20150279824A1 true US20150279824A1 (en) 2015-10-01

Family

ID=54191470

Family Applications (1)

Application Number Title Priority Date Filing Date
US14/228,685 Abandoned US20150279824A1 (en) 2014-03-28 2014-03-28 Electronic package and method of forming an electronic package

Country Status (1)

Country Link
US (1) US20150279824A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9502397B1 (en) * 2015-04-29 2016-11-22 Deca Technologies, Inc. 3D interconnect component for fully molded packages
CN110875201A (en) * 2018-09-04 2020-03-10 中芯集成电路(宁波)有限公司 Wafer level packaging method and packaging structure
CN112805413A (en) * 2018-10-18 2021-05-14 Jx金属株式会社 Conductive material, molded article, and electronic component

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821626A (en) * 1995-06-30 1998-10-13 Nitto Denko Corporation Film carrier, semiconductor device using same and method for mounting semiconductor element
US7091595B2 (en) * 2003-11-11 2006-08-15 Infineon Technologies, Ag Semiconductor device with semiconductor chip and rewiring layer and method for producing the same
US20090170241A1 (en) * 2007-12-26 2009-07-02 Stats Chippac, Ltd. Semiconductor Device and Method of Forming the Device Using Sacrificial Carrier
US20090236686A1 (en) * 2006-04-19 2009-09-24 Stats Chippac, Ltd. Semiconductor Device and Method of Forming UBM Fixed Relative to Interconnect Structure for Alignment of Semiconductor Die
US20100006994A1 (en) * 2008-07-14 2010-01-14 Stats Chippac, Ltd. Embedded Semiconductor Die Package and Method of Making the Same Using Metal Frame Carrier
US20130154076A1 (en) * 2010-09-14 2013-06-20 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Leadframe Interposer Over Semiconductor Die and TSV Substrate for Vertical Electrical Interconnect
US20130341784A1 (en) * 2012-06-21 2013-12-26 Stats Chippac, Ltd. Semiconductor Device and Method of Forming an Embedded SOP Fan-Out Package

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821626A (en) * 1995-06-30 1998-10-13 Nitto Denko Corporation Film carrier, semiconductor device using same and method for mounting semiconductor element
US7091595B2 (en) * 2003-11-11 2006-08-15 Infineon Technologies, Ag Semiconductor device with semiconductor chip and rewiring layer and method for producing the same
US20090236686A1 (en) * 2006-04-19 2009-09-24 Stats Chippac, Ltd. Semiconductor Device and Method of Forming UBM Fixed Relative to Interconnect Structure for Alignment of Semiconductor Die
US20090170241A1 (en) * 2007-12-26 2009-07-02 Stats Chippac, Ltd. Semiconductor Device and Method of Forming the Device Using Sacrificial Carrier
US20100006994A1 (en) * 2008-07-14 2010-01-14 Stats Chippac, Ltd. Embedded Semiconductor Die Package and Method of Making the Same Using Metal Frame Carrier
US20130154076A1 (en) * 2010-09-14 2013-06-20 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Leadframe Interposer Over Semiconductor Die and TSV Substrate for Vertical Electrical Interconnect
US20130341784A1 (en) * 2012-06-21 2013-12-26 Stats Chippac, Ltd. Semiconductor Device and Method of Forming an Embedded SOP Fan-Out Package

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9502397B1 (en) * 2015-04-29 2016-11-22 Deca Technologies, Inc. 3D interconnect component for fully molded packages
CN110875201A (en) * 2018-09-04 2020-03-10 中芯集成电路(宁波)有限公司 Wafer level packaging method and packaging structure
CN112805413A (en) * 2018-10-18 2021-05-14 Jx金属株式会社 Conductive material, molded article, and electronic component

Similar Documents

Publication Publication Date Title
US20230307373A1 (en) Size and efficiency of dies
US9159670B2 (en) Ultra fine pitch and spacing interconnects for substrate
US9368566B2 (en) Package on package (PoP) integrated device comprising a capacitor in a substrate
JP2012517109A (en) Method for placing active and passive devices in a chip
WO2017139410A1 (en) Integrated device comprising a capacitor that includes multiple pins and at least one pin that traverses a plate of the capacitor
US20230405976A1 (en) Glass dielectric layer with patterning
US11545441B2 (en) Semiconductor package having wafer-level active die and external die mount
WO2016172633A1 (en) Package on package (pop) device comprising solder connections between integrated circuit device packages
US20150064843A1 (en) Stacked semiconductor package and method for manufacturing the same
US20150279824A1 (en) Electronic package and method of forming an electronic package
US9466578B2 (en) Substrate comprising improved via pad placement in bump area
US20160183379A1 (en) Substrate comprising an embedded capacitor
US9807884B2 (en) Substrate comprising embedded elongated capacitor
US20190333886A1 (en) Interconnect structure for a microelectronic device
US20210098320A1 (en) Package comprising a solder resist layer configured as a seating plane for a device
EP3275020A1 (en) Method of fabricating an optical module that includes an electronic package
US10026691B2 (en) Package substrate having noncircular interconnects
US10157824B2 (en) Integrated circuit (IC) package and package substrate comprising stacked vias
US20220415868A1 (en) Package with a substrate comprising an embedded capacitor with side wall coupling
US10361149B2 (en) Land grid array (LGA) packaging of passive-on-glass (POG) structure
KR20240050351A (en) Package containing a substrate with high-density interconnects

Legal Events

Date Code Title Description
AS Assignment

Owner name: INTEL CORPORATION, CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:NAIR, VIJAY K;HU, CHUAN;REEL/FRAME:032777/0413

Effective date: 20140428

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION