US20120205623A1 - NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES - Google Patents
NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES Download PDFInfo
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Definitions
- the invention is related to semiconductor materials, methods, and devices, and more particularly, to non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.
- the “tilted” energy bands spatially separate electrons and hole wave functions, which reduces the oscillator strength of radiative transitions and red-shifts the emission wavelength.
- These effects are manifestations of the quantum confined Stark effect (QCSE) and have been thoroughly analyzed for GaN/(Al,Ga)N quantum wells. See References 1-8. Additionally, the large polarization-induced fields are partially screened by dopants and impurities, so the emission characteristics can be difficult to engineer accurately.
- QCSE quantum confined Stark effect
- the internal fields are also responsible for large mobile sheet charge densities in nitride-based transistor heterostructures. Although these large 2D electron gases (2DEGs) are attractive and useful for devices, the polarization-induced fields, and the 2DEG itself, are difficult to control accurately.
- 2DEGs 2D electron gases
- Non-polar growth is a promising means of circumventing the strong polarization-induced electric fields that exist in wurtzite nitride semiconductors.
- Polarization-induced electric fields do not affect wurtzite nitride semiconductors grown in non-polar directions (i.e., perpendicular to the [0001] axis) due to the absence of polarization discontinuities along non-polar growth directions.
- MQWs multiple quantum wells
- MBE molecular beam epitaxy
- the present invention describes a method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.
- non-polar (11 2 0) a-plane GaN thin films are grown on a (11 0 2) r-plane sapphire substrate using metalorganic chemical vapor deposition (MOCVD).
- MOCVD metalorganic chemical vapor deposition
- FIG. 1 is a flowchart that illustrates the steps of a method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices according to a preferred embodiment of the present invention
- FIG. 2 illustrates the photoluminescence (PL) spectra of 5-period a-plane In 0.1 GaN/In 0.03 GaN MQW structures with nominal well widths of 1.5 nm, 2.5 nm, and 5.0 nm measured at room temperature;
- PL photoluminescence
- FIG. 3 illustrates the PL spectra of an a-plane In 0.03 Ga 0.97 N/In 0.1 Ga 0.6 N MQW structure with a nominal well width of 5.0 nm measured for various pump powers;
- FIG. 4( a ) shows a 2 ⁇ - ⁇ x-ray diffraction scan of the 10-period Al 0.4 Ga 0.6 N/GaN superlattice, which reveals clearly defined satellite peaks;
- FIG. 4( b ) illustrates the PL spectra of the superlattice characterized in FIG. 4( a );
- FIG. 5( a ) shows a 2 ⁇ - ⁇ diffraction scan that identifies the growth direction of the GaN film as (11 2 0) a-plane GaN;
- FIG. 5( b ) is a compilation of off-axis ⁇ scans used to determine the in-plane epitaxial relationship between GaN and r-sapphire, wherein the angle of inclination ⁇ used to access the off-axis reflections is noted for each scan;
- FIG. 5( c ) is a schematic illustration of the epitaxial relationship between the GaN and r-plane sapphire
- FIGS. 6( a ) and 6 ( b ) are cross-sectional and plan-view transmission electron microscopy (TEM) images, respectively, of the defect structure of the a-plane GaN films on r-plane sapphire; and
- FIGS. 7( a ) and 7 ( b ) are atomic force microscopy (AFM) amplitude and height images, respectively, of the surface of the as-grown a-plane GaN films.
- AFM atomic force microscopy
- the purpose of the present invention is to provide a method for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices, using non-polar (11 2 0) a-plane GaN thin films as templates.
- the present invention focuses on the subsequent growth of (Al,B,In,Ga)N quantum wells and heterostructures on the (11 2 0) a-plane GaN layers.
- the luminescence characteristics of these structures indicate that polarization-induced electric fields do not affect their electronic band structure, and consequently, polarization-free structures have been attained.
- the development of non-polar (Al,B,In,Ga)N quantum wells and heterostructures is important to the realization of high-performance (Al,B,In,Ga)N-based devices which are unaffected by polarization-induced electric fields.
- Non-polar (11 2 0) a-plane GaN layers include laser diodes (LDs), light emitting diodes (LEDs), resonant cavity LEDs (RC-LEDs), vertical cavity surface emitting lasers (VCSELs), high electron mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), heterojunction field effect transistors (HFETs), as well as UV and near-UV photodetectors.
- LDs laser diodes
- LEDs light emitting diodes
- RC-LEDs resonant cavity LEDs
- VCSELs vertical cavity surface emitting lasers
- HEMTs high electron mobility transistors
- HBTs heterojunction bipolar transistors
- HFETs heterojunction field effect transistors
- FIG. 1 is a flowchart that illustrates the steps of a method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices according to a preferred embodiment of the present invention.
- the steps of this method include the growth of “template” (11 2 0) a-plane GaN layers, followed by the growth of layers with differing alloy compositions for quantum wells and heterostructures.
- Block 100 represents loading of a sapphire substrate into a vertical, close-spaced, rotating disk, MOCVD reactor.
- epi-ready sapphire substrates with surfaces crystallographically oriented within +/ ⁇ 2° of the sapphire r-plane (11 2 0) may be obtained from commercial vendors. No ex-situ preparations need be performed prior to loading the sapphire substrate into the MOCVD reactor, although ex-situ cleaning of the sapphire substrate could be used as a precautionary measure.
- Block 102 represents annealing the sapphire substrate in-situ at a high temperature (>1000° C.), which improves the quality of the substrate surface on the atomic scale. After annealing, the substrate temperature is reduced for the subsequent low temperature nucleation layer deposition.
- Block 104 represents depositing a thin, low temperature, low pressure, nitride-based nucleation layer as a buffer layer on the sapphire substrate.
- nitride-based nucleation layer is comprised of, but is not limited to, 1-100 nanometers (nm) of GaN deposited at approximately 400-900° C. and 1 atm.
- Block 106 represents growing the epitaxial (11 2 0) a-plane GaN layers to a thickness of approximately 1.5 ⁇ n.
- the high temperature growth conditions include, but are not limited to, approximately 1100° C. growth temperature, 0.2 atm or less growth pressure, 30 ⁇ mol per minute Ga flow, and 40,000 ⁇ mol per minute N flow, thereby providing a VIII ratio of approximately 1300).
- the precursors used as the group III and group V sources are trimethylgallium and ammonia, respectively, although alternative precursors could be used as well.
- growth conditions may be varied to produce different growth rates, e.g., between 5 and 9 ⁇ per second, without departing from the scope of the present invention.
- Block 108 represents cooling the epitaxial (11 2 0) a-plane GaN layers down under a nitrogen overpressure.
- Block 110 represents non-polar (Al,B,In,Ga)N layers, with differing alloy compositions and hence differing electrical properties, being grown on the non-polar (11 2 0) a-plane GaN layers.
- These non-polar (Al,B,In,Ga)N layers are used to produce quantum wells and hetero structures.
- the quantum wells employ alternating layers of different bandgap such that “wells” are formed in the structure's energy band profile.
- the precise number of layers in the structure depends on the number of quantum wells desired.
- electrons and holes accumulate in the wells of the conduction and valence bands, respectively.
- Band-to-band recombination occurs in the well layers since the density-of-states is highest at these locations.
- quantum wells can be engineered according to the desired emission characteristics and available epitaxial growth capabilities.
- the nominal thickness and composition of the layers successfully grown on the non-polar (11 2 0) a-plane GaN layers include, but are not limited to:
- Block 110 was repeated 5 times to form an MQW structure that was capped with GaN to maintain the integrity of the (In,Ga)N layers.
- the layers comprising the MQW structure were grown via MOCVD at a temperature of 825° C. and atmospheric pressure.
- FIG. 2 illustrates the photoluminescence (PL) spectra of 5-period a-plane In 0.1 GaN/In 0.03 GaN MQW structures with nominal well widths of 1.5 nm, 2.5 nm, and 5.0 nm measured at room temperature.
- the peak PL emission wavelength and intensity increase with increasing well width.
- FIG. 3 illustrates the PL spectra of an a-plane In 0.03 Ga 0.97 N/In 0.1 Ga 0.9 N MQW structure with a nominal well width of 5.0 nm measured for various pump powers.
- PL intensity increases with pump power as expected while the peak emission wavelength is pump power independent, indicating that the band profiles are not influenced by polarization-induced electric fields.
- heterostructures containing (Al,Ga)N/GaN superlattices may also be grown on the non-polar (11 2 0) a-plane GaN layers.
- heterostructures typically consist of two layers, most commonly (AlGa)N on GaN, to produce an electrical channel necessary for transistor operation.
- the thickness and composition of the superlattice layers may comprise, but are not limited to:
- Block 110 was repeated 10 times to form a 10-period Al 0.4 Ga 0.6 N/GaN superlattice that was terminated with a 11 nm GaN well layer.
- the superlattice was grown via MOCVD at conditions similar to those employed for the underlying template layer: ⁇ 1100° C. growth temperature, ⁇ 0.1 atm growth pressure, 38 ⁇ mol/min Al flow, 20 ⁇ mol/min Ga flow, and 40,000 ⁇ mol/min N flow.
- the Al flow was simply turned off to form the GaN well layers.
- Successful growth conditions are not strictly defined by the values presented above. Similar to the (In,Ga)N quantum wells, the luminescence characteristics of the superlattice described above indicate that polarization fields do not affect the structure.
- FIG. 4( a ) shows a 2 ⁇ - ⁇ x-ray diffraction scan of the 10-period Al 0.4 Ga 0.6 N/GaN superlattice, which reveals clearly defined satellite peaks
- FIG. 4( b ) illustrates the PL spectra of the superlattice characterized in FIG. 4( a ).
- the absence of polarization-induced fields was evidenced by the 3.45 eV ( ⁇ 360 nm) band edge emission of the superlattice.
- the band edge emission did not experience the subtle red-shift present in c-plane superlattices.
- the crystallographic orientation and structural quality of the as-grown GaN films and r-plane sapphire were determined using a PhilipsTM four-circle, high-resolution, x-ray diffractometer (HR-XRD) operating in receiving slit mode with four bounce Ge(220)-monochromated Cu Ka radiation and a 1.2 mm slit on the detector arm.
- Convergent beam electron diffraction (CBED) was used to determine the polarity of the a-GaN films with respect to the sapphire substrate.
- a Digital Instruments D3000 Atomic Force Microscope (AFM) in tapping mode produced images of the surface morphology.
- FIG. 5( a ) shows a 2 ⁇ - ⁇ diffraction scan that identifies the growth direction of the GaN film as (11 2 0) a-plane GaN.
- the scan detected sapphire (1 1 02), (2 2 04), and GaN (11 2 0) reflections.
- FIG. 5( b ) is a compilation of off-axis ⁇ scans used to determine the in-plane epitaxial relationship between GaN and r-sapphire, wherein the angle of inclination ⁇ used to access the off-axis reflections is noted for each scan. Having confirmed the a-plane growth surface, off-axis diffraction peaks were used to determine the in-epitaxial relationship between the GaN and the r-sapphire.
- FIG. 5( c ) is a schematic illustration of the epitaxial relationship between the GaN and r-plane sapphire.
- the a-GaN polarity was determined using CBED.
- the polarity's sign is defined by the direction of the polar Ga-N bonds aligned along the GaN c-axis; the positive c-axis [0001] points from a gallium atom to a nitrogen atom. Consequently, a gallium-face c-GaN film has a [0001] growth direction, while a nitrogen-face c-GaN crystal has a [000 1 ] growth direction.
- GaN is aligned with the sapphire c-axis projection [ 1 101] sapphire , and therefore, the epitaxial relationships defined above are accurate in terms of polarity. Consequently, the positive GaN c-axis points in same direction as the sapphire c-axis projection on the growth surface (as determined via CBED). This relationship concurs with the epitaxial relationships previously reported by groups using a variety of growth techniques. See References 17, 18 and 19. Therefore, the epitaxial relationship is specifically defined for the growth of GaN on an r-plane sapphire substrate.
- FIGS. 6( a ) and 6 ( b ) are cross-sectional and plan-view TEM images, respectively, of the defect structure of the a-plane GaN films on an r-plane sapphire substrate. These images reveal the presence of line and planar defects, respectively.
- the cross-sectional TEM image in FIG. 6( a ) reveals a large density of threading dislocations (TD's) originating at the sapphire/GaN interface with line directions parallel to the growth direction [11 2 0].
- the TD density determined by plan view TEM, was 2.6 ⁇ 10 10 cm ⁇ 2 .
- plan view TEM image in FIG. 6( b ) reveals the planar defects observed in the a-GaN films.
- Stacking faults aligned perpendicular to the c-axis with a density of 3.8 ⁇ 10 5 cm ⁇ 1 were observed in the plan-view TEM images.
- Stacking faults with similar characteristics were observed in a-plane AlN films grown on r-plane sapphire substrates. See Reference 20.
- the stacking faults have a common faulting plane parallel to the close-packed (0001) and a density of ⁇ 3.8 ⁇ 10 5 cm ⁇ 1 .
- Omega rocking curves were measured for both the GaN on-axis (11 2 0) and off-axis (10 1 1) reflections to characterize the a-plane GaN crystal quality.
- the full-width half-maximum (FWHM) of the on-axis peak was 0.29° (1037′′), while the off-axis peak exhibited a larger orientational spread with a FWHM of 0.46° (1659′′).
- the large FWHM values are expected since the microstructure contains a substantial dislocation density. According to the analysis presented by Heying et al.
- on-axis peak widths are broadened by screw and mixed dislocations, while off-axis widths are broadened by edge-component TD's (assuming the TD line is parallel to the film normal). See Reference 21.
- edge-component TD's assuming the TD line is parallel to the film normal.
- FIGS. 7( a ) and 7 ( b ) are AFM amplitude and height images, respectively, of the surface of the as-grown a-plane GaN film.
- the surface pits in the AFM amplitude image of FIG. 7( a ) are uniformly aligned parallel to the GaN c-axis, while the terraces visible in the AFM height image of FIG. 7( b ) are aligned perpendicular to the c-axis.
- the a-GaN growth surface is pitted on a sub-micron scale, as can be clearly observed in the AFM amplitude image shown in FIG. 7( a ). It has been proposed that the surface pits are decorating dislocation terminations with the surface; the dislocation density determined by plan view TEM correlates with the surface pit density within an order of magnitude.
- the AFM height image in FIG. 7( b ) reveals faint terraces perpendicular to the c-axis.
- these crystallographic features could be the early signs of the surface growth mode. At this early point in the development of the a-plane growth process, neither the pits nor the terraces have been correlated to particular defect structures.
- non-polar (Al,In,Ga)N quantum wells and heterostructures design and MOCVD growth conditions may be used in alternative embodiments.
- specific thickness and composition of the layers, in addition to the number of quantum wells grown, are variables inherent to quantum well structure design and may be used in alternative embodiments of the present invention.
- MOCVD growth conditions determine the dimensions and compositions of the quantum well structure layers.
- MOCVD growth conditions are reactor dependent and may vary between specific reactor designs. Many variations of this process are possible with the variety of reactor designs currently being using in industry and academia.
- the growth method could also be molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), hydride vapor phase epitaxy (HVPE), sublimation, or plasma-enhanced chemical vapor deposition (PECVD).
- MBE molecular beam epitaxy
- LPE liquid phase epitaxy
- HVPE hydride vapor phase epitaxy
- PECVD plasma-enhanced chemical vapor deposition
- non-polar a-plan GaN thin films are described herein, the same techniques are applicable to non-polar m-plane GaN thin films.
- non-polar InN, AlN, and AlInGaN thin films could be created instead of GaN thin films.
- substrates other than sapphire substrate could be employed for non-polar GaN growth.
- substrates include silicon carbide, gallium nitride, silicon, zinc oxide, boron nitride, lithium aluminate, lithium niobate, germanium, aluminum nitride, and lithium gallate.
- the present invention describes a method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.
- non-polar (11 2 0) a-plane GaN thin film layers are grown on a (1 1 02) r-plane sapphire substrate using MOCVD.
- These non-polar (11 2 0) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.
Abstract
A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 2 0) a-plane GaN layers are grown on an r-plane (11 0 2) sapphire substrate using MOCVD. These non-polar (11 2 0) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.
Description
- This application is a continuation under 35 U.S.C. §120 of co-pending and commonly-assigned U.S. Utility patent application Ser. No. 13/099,834, filed on May 3, 2011, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, entitled “NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES ” attorneys' docket no. 30794.101-US-C1 (2002-301-5), which application is a continuation under 35 U.S.C. §120 of co-pending and commonly-assigned U.S. Utility patent application Ser. No. 11/472,033, filed on Jun. 21, 2006, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, entitled “NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES ” attorneys' docket no. 30794.101-US-D1 (2002-301-3), now U.S. Pat. No. 7,982,208, issued Jul. 19, 2011, which application is a divisional application claiming the benefit under 35 U.S.C. §§120 and 121 of U.S. Utility patent application Ser. No. 10/413,690, filed on Apr. 15, 2003, now U.S. Pat. No. 7,091,514, issued Aug. 15, 2006, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, entitled “NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES ” attorneys' docket no. 30794.101-US-U1 (2002-301-2), which application claims the benefit under 35 U.S.C. §119(e) of the following co-pending and commonly-assigned U.S. Provisional patent application Ser. No. 60/372,909, entitled “NON-POLAR GALLIUM NITRIDE BASED THIN FILMS AND HETEROSTRUCTURE MATERIALS,” filed on Apr. 15, 2002, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, attorneys docket number 30794.95-US-P1, all of which applications are incorporated by reference herein.
- This application is related to the following co-pending and commonly-assigned United States Utility Patent Applications:
- Ser. No. 10/413,691, entitled “NON-POLAR A-PLANE GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION,” filed Apr. 15, 2003, by Michael D. Craven and James S. Speck, attorneys docket number 30794.100-US-U1; and
- Ser. No. 10/413,913, entitled “DISLOCATION REDUCTION IN NON-POLAR GALLIUM NITRIDE THIN FILMS,” Apr. 15, 2003, now issued U.S. Pat. No. 6,900,070 issued May 31, 2005, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, attorneys docket number 30794.102-US-U1;
- both of which applications are incorporated by reference herein.
- The invention is related to semiconductor materials, methods, and devices, and more particularly, to non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.
- (Note: This application references a number of different patents, applications and/or publications as indicated throughout the specification by one or more reference numbers. A list of these different publications ordered according to these reference numbers can be found below in the section entitled “References.” Each of these publications is incorporated by reference herein.)
- Current state of the art (Al,B,In,Ga)N heterostructures and quantum well structures employ c-plane (0001) layers. The total polarization of a III-N film consists of spontaneous and piezoelectric polarization contributions, which both originate from the single polar [001] axis of the wurtzite nitride crystal structure. Polarization discontinuities which exist at surfaces and interfaces within nitride heterostructures are associated with fixed sheet charges, which in turn produce electric fields. Since the alignment of these internal electric fields coincides with the growth direction of the c-plane (0001) layers, the fields affect the energy bands of device structures.
- In quantum wells, the “tilted” energy bands spatially separate electrons and hole wave functions, which reduces the oscillator strength of radiative transitions and red-shifts the emission wavelength. These effects are manifestations of the quantum confined Stark effect (QCSE) and have been thoroughly analyzed for GaN/(Al,Ga)N quantum wells. See References 1-8. Additionally, the large polarization-induced fields are partially screened by dopants and impurities, so the emission characteristics can be difficult to engineer accurately.
- The internal fields are also responsible for large mobile sheet charge densities in nitride-based transistor heterostructures. Although these large 2D electron gases (2DEGs) are attractive and useful for devices, the polarization-induced fields, and the 2DEG itself, are difficult to control accurately.
- Non-polar growth is a promising means of circumventing the strong polarization-induced electric fields that exist in wurtzite nitride semiconductors. Polarization-induced electric fields do not affect wurtzite nitride semiconductors grown in non-polar directions (i.e., perpendicular to the [0001] axis) due to the absence of polarization discontinuities along non-polar growth directions.
- Recently, two groups have grown non-polar GaN/(Al,Ga)N multiple quantum wells (MQWs) via molecular beam epitaxy (MBE) without the presence of polarization-induced electric fields along non-polar growth directions. Waltereit et al. grew m-plane GaN/Al0.1Ga0.9N MQWs on γ-LiAlO2 (100) substrates and Ng grew a-plane GaN/Al0.15Ga0.85N MQW on r-plane sapphire substrates. See References 9-10.
- Despite these results, the growth of non-polar GaN orientations remains difficult to achieve in a reproducible manner.
- The present invention describes a method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. First, non-polar (11
2 0) a-plane GaN thin films are grown on a (110 2) r-plane sapphire substrate using metalorganic chemical vapor deposition (MOCVD). These non-polar (112 0) a-plane GaN thin films are templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices thereon. - Referring now to the drawings in which like reference numbers represent corresponding parts throughout:
-
FIG. 1 is a flowchart that illustrates the steps of a method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices according to a preferred embodiment of the present invention; -
FIG. 2 illustrates the photoluminescence (PL) spectra of 5-period a-plane In0.1GaN/In0.03GaN MQW structures with nominal well widths of 1.5 nm, 2.5 nm, and 5.0 nm measured at room temperature; -
FIG. 3 illustrates the PL spectra of an a-plane In0.03Ga0.97N/In0.1Ga0.6N MQW structure with a nominal well width of 5.0 nm measured for various pump powers; -
FIG. 4( a) shows a 2θ-ω x-ray diffraction scan of the 10-period Al0.4Ga0.6N/GaN superlattice, which reveals clearly defined satellite peaks; -
FIG. 4( b) illustrates the PL spectra of the superlattice characterized inFIG. 4( a); -
FIG. 5( a) shows a 2θ-ω diffraction scan that identifies the growth direction of the GaN film as (112 0) a-plane GaN; -
FIG. 5( b) is a compilation of off-axis φ scans used to determine the in-plane epitaxial relationship between GaN and r-sapphire, wherein the angle of inclination ψ used to access the off-axis reflections is noted for each scan; -
FIG. 5( c) is a schematic illustration of the epitaxial relationship between the GaN and r-plane sapphire; -
FIGS. 6( a) and 6(b) are cross-sectional and plan-view transmission electron microscopy (TEM) images, respectively, of the defect structure of the a-plane GaN films on r-plane sapphire; and -
FIGS. 7( a) and 7(b) are atomic force microscopy (AFM) amplitude and height images, respectively, of the surface of the as-grown a-plane GaN films. - In the following description of the preferred embodiment, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration a specific embodiment in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural changes may be made without departing from the scope of the present invention.
- Overview
- The purpose of the present invention is to provide a method for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices, using non-polar (11
2 0) a-plane GaN thin films as templates. - The growth of device-quality non-polar (11
2 0) a-plane GaN thin films on (110 2) r-plane sapphire substrates via MOCVD is described in co-pending and commonly-assigned U.S. Provisional Patent Application Ser. No. 60/372,909, entitled “NON-POLAR GALLIUM NITRIDE BASED THIN FILMS AND HETEROSTRUCTURE MATERIALS,” filed on Apr. 15, 2002, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, attorneys' docket number 30794.95-US-P1, as well as co-pending and commonly-assigned U.S. Utility patent application Ser. No. 10/413,691, entitled “NON-POLAR A-PLANE GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION,” filed on same date herewith, by Michael D. Craven and James S. Speck, attorneys docket number 30794.100-US-U1, both of which applications are incorporated by reference herein. - The present invention focuses on the subsequent growth of (Al,B,In,Ga)N quantum wells and heterostructures on the (11
2 0) a-plane GaN layers. The luminescence characteristics of these structures indicate that polarization-induced electric fields do not affect their electronic band structure, and consequently, polarization-free structures have been attained. The development of non-polar (Al,B,In,Ga)N quantum wells and heterostructures is important to the realization of high-performance (Al,B,In,Ga)N-based devices which are unaffected by polarization-induced electric fields. - Potential devices to be deposited on non-polar (11
2 0) a-plane GaN layers include laser diodes (LDs), light emitting diodes (LEDs), resonant cavity LEDs (RC-LEDs), vertical cavity surface emitting lasers (VCSELs), high electron mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), heterojunction field effect transistors (HFETs), as well as UV and near-UV photodetectors. - Process Steps
-
FIG. 1 is a flowchart that illustrates the steps of a method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices according to a preferred embodiment of the present invention. The steps of this method include the growth of “template” (112 0) a-plane GaN layers, followed by the growth of layers with differing alloy compositions for quantum wells and heterostructures. -
Block 100 represents loading of a sapphire substrate into a vertical, close-spaced, rotating disk, MOCVD reactor. For this step, epi-ready sapphire substrates with surfaces crystallographically oriented within +/−2° of the sapphire r-plane (112 0) may be obtained from commercial vendors. No ex-situ preparations need be performed prior to loading the sapphire substrate into the MOCVD reactor, although ex-situ cleaning of the sapphire substrate could be used as a precautionary measure. -
Block 102 represents annealing the sapphire substrate in-situ at a high temperature (>1000° C.), which improves the quality of the substrate surface on the atomic scale. After annealing, the substrate temperature is reduced for the subsequent low temperature nucleation layer deposition. -
Block 104 represents depositing a thin, low temperature, low pressure, nitride-based nucleation layer as a buffer layer on the sapphire substrate. Such layers are commonly used in the heteroepitaxial growth of c-plane (0001) nitride semiconductors. In the preferred embodiment, the nucleation layer is comprised of, but is not limited to, 1-100 nanometers (nm) of GaN deposited at approximately 400-900° C. and 1 atm. - After depositing the nucleation layer, the reactor temperature is raised to a high temperature, and
Block 106 represents growing the epitaxial (112 0) a-plane GaN layers to a thickness of approximately 1.5 μn. The high temperature growth conditions include, but are not limited to, approximately 1100° C. growth temperature, 0.2 atm or less growth pressure, 30 μmol per minute Ga flow, and 40,000 μmol per minute N flow, thereby providing a VIII ratio of approximately 1300). In the preferred embodiment, the precursors used as the group III and group V sources are trimethylgallium and ammonia, respectively, although alternative precursors could be used as well. In addition, growth conditions may be varied to produce different growth rates, e.g., between 5 and 9 Å per second, without departing from the scope of the present invention. - Upon completion of the high temperature growth step,
Block 108 represents cooling the epitaxial (112 0) a-plane GaN layers down under a nitrogen overpressure. - Finally,
Block 110 represents non-polar (Al,B,In,Ga)N layers, with differing alloy compositions and hence differing electrical properties, being grown on the non-polar (112 0) a-plane GaN layers. These non-polar (Al,B,In,Ga)N layers are used to produce quantum wells and hetero structures. - The quantum wells employ alternating layers of different bandgap such that “wells” are formed in the structure's energy band profile. The precise number of layers in the structure depends on the number of quantum wells desired. Upon excitation, electrons and holes accumulate in the wells of the conduction and valence bands, respectively. Band-to-band recombination occurs in the well layers since the density-of-states is highest at these locations. Thus, quantum wells can be engineered according to the desired emission characteristics and available epitaxial growth capabilities.
- The nominal thickness and composition of the layers successfully grown on the non-polar (11
2 0) a-plane GaN layers include, but are not limited to: -
- 8 nm Si-doped In0.03GaN barrier
- 1.5, 2.5, or 5 nm In0.1GaN well
- Moreover, the above Blocks may be repeated as necessary. In one example,
Block 110 was repeated 5 times to form an MQW structure that was capped with GaN to maintain the integrity of the (In,Ga)N layers. In this example, the layers comprising the MQW structure were grown via MOCVD at a temperature of 825° C. and atmospheric pressure. - The luminescence characteristics of this structure indicate that polarization-induced electric fields do not affect the band profiles, and the quantum wells can be considered polarization-free. For example,
FIG. 2 illustrates the photoluminescence (PL) spectra of 5-period a-plane In0.1GaN/In0.03GaN MQW structures with nominal well widths of 1.5 nm, 2.5 nm, and 5.0 nm measured at room temperature. The peak PL emission wavelength and intensity increase with increasing well width. - Further,
FIG. 3 illustrates the PL spectra of an a-plane In0.03Ga0.97N/In0.1Ga0.9N MQW structure with a nominal well width of 5.0 nm measured for various pump powers. PL intensity increases with pump power as expected while the peak emission wavelength is pump power independent, indicating that the band profiles are not influenced by polarization-induced electric fields. - In addition to (In,Ga)N quantum wells, heterostructures containing (Al,Ga)N/GaN superlattices may also be grown on the non-polar (11
2 0) a-plane GaN layers. For example, heterostructures typically consist of two layers, most commonly (AlGa)N on GaN, to produce an electrical channel necessary for transistor operation. The thickness and composition of the superlattice layers may comprise, but are not limited to: -
- 9 nm Al0.4GaN barrier
- 11 nm GaN well
- In one example,
Block 110 was repeated 10 times to form a 10-period Al0.4Ga0.6N/GaN superlattice that was terminated with a 11 nm GaN well layer. The superlattice was grown via MOCVD at conditions similar to those employed for the underlying template layer: ˜1100° C. growth temperature, ˜0.1 atm growth pressure, 38 μmol/min Al flow, 20 μmol/min Ga flow, and 40,000 μmol/min N flow. The Al flow was simply turned off to form the GaN well layers. Successful growth conditions are not strictly defined by the values presented above. Similar to the (In,Ga)N quantum wells, the luminescence characteristics of the superlattice described above indicate that polarization fields do not affect the structure. -
FIG. 4( a) shows a 2θ-ω x-ray diffraction scan of the 10-period Al0.4Ga0.6N/GaN superlattice, which reveals clearly defined satellite peaks, whileFIG. 4( b) illustrates the PL spectra of the superlattice characterized inFIG. 4( a). The absence of polarization-induced fields was evidenced by the 3.45 eV (˜360 nm) band edge emission of the superlattice. The band edge emission did not experience the subtle red-shift present in c-plane superlattices. - Experimental Results For As-Grown GaN
- The crystallographic orientation and structural quality of the as-grown GaN films and r-plane sapphire were determined using a Philips™ four-circle, high-resolution, x-ray diffractometer (HR-XRD) operating in receiving slit mode with four bounce Ge(220)-monochromated Cu Ka radiation and a 1.2 mm slit on the detector arm. Convergent beam electron diffraction (CBED) was used to determine the polarity of the a-GaN films with respect to the sapphire substrate. Plan-view and cross-section transmission electron microscopy (TEM) samples, prepared by wedge polishing and ion milling, were analyzed to define the defect structure of a-GaN. A Digital Instruments D3000 Atomic Force Microscope (AFM) in tapping mode produced images of the surface morphology.
-
FIG. 5( a) shows a 2θ-ω diffraction scan that identifies the growth direction of the GaN film as (112 0) a-plane GaN. The scan detected sapphire (11 02), (22 04), and GaN (112 0) reflections. Within the sensitivity of these measurements, no GaN (0002) reflections corresponding to 2θ=34.604° were detected, indicating that there is no c-plane (0002) content present in these films, and thus instabilities in the GaN growth orientation are not a concern. -
FIG. 5( b) is a compilation of off-axis φ scans used to determine the in-plane epitaxial relationship between GaN and r-sapphire, wherein the angle of inclination ψ used to access the off-axis reflections is noted for each scan. Having confirmed the a-plane growth surface, off-axis diffraction peaks were used to determine the in-epitaxial relationship between the GaN and the r-sapphire. Two sample rotations φ and ψ were adjusted in order to bring off-axis reflections into the scattering plane of the diffractometer, wherein φ is the angle of rotation about the sample surface normal and ψ is the angle of sample tilt about the axis formed by the intersection of the Bragg and scattering planes. After tilting the sample to the correct ψ for a particular off-axis reflection, φ scans detected GaN (101 0), (101 1), and sapphire (0006) peaks, as shown inFIG. 2( b). The correlation between the φ positions of these peaks determined the following epitaxial relationship: [0001]GaN∥[1 101]sapphire and [1 100]GaN∥[112 0]sapphire. -
FIG. 5( c) is a schematic illustration of the epitaxial relationship between the GaN and r-plane sapphire. To complement the x-ray analysis of the crystallographic orientation, the a-GaN polarity was determined using CBED. The polarity's sign is defined by the direction of the polar Ga-N bonds aligned along the GaN c-axis; the positive c-axis [0001] points from a gallium atom to a nitrogen atom. Consequently, a gallium-face c-GaN film has a [0001] growth direction, while a nitrogen-face c-GaN crystal has a [0001 ] growth direction. For a-GaN grown on r-sapphire, [0001]GaN is aligned with the sapphire c-axis projection [1 101]sapphire, and therefore, the epitaxial relationships defined above are accurate in terms of polarity. Consequently, the positive GaN c-axis points in same direction as the sapphire c-axis projection on the growth surface (as determined via CBED). This relationship concurs with the epitaxial relationships previously reported by groups using a variety of growth techniques. See References 17, 18 and 19. Therefore, the epitaxial relationship is specifically defined for the growth of GaN on an r-plane sapphire substrate. -
FIGS. 6( a) and 6(b) are cross-sectional and plan-view TEM images, respectively, of the defect structure of the a-plane GaN films on an r-plane sapphire substrate. These images reveal the presence of line and planar defects, respectively. The diffraction conditions forFIGS. 3( a) and 3(b) are g=0002 and g=101 0, respectively. - The cross-sectional TEM image in
FIG. 6( a) reveals a large density of threading dislocations (TD's) originating at the sapphire/GaN interface with line directions parallel to the growth direction [112 0]. The TD density, determined by plan view TEM, was 2.6×1010 cm−2. With the TD line direction parallel to the growth direction, pure screw dislocations will have Burgers vectors aligned along the growth direction b=±[112 0]) while pure edge dislocations will have b=±[0001]. The reduced symmetry of the a-GaN surface with respect to c-GaN complicates the characterization of mixed dislocations since the crystallographically equivalent [112 0] directions cannot be treated as the family <112 0>. Specifically, the possible Burgers vectors of mixed dislocations can be divided into three subdivisions: (1) b=±[12 10]b=and (3) b=±[2 110], (2) b=±[112 0]±[0001], and (3) b=±[112 0]±[12 10] and b=±[112 0]±[2 110]. - In addition to line defects, the plan view TEM image in
FIG. 6( b) reveals the planar defects observed in the a-GaN films. Stacking faults aligned perpendicular to the c-axis with a density of 3.8×105 cm−1 were observed in the plan-view TEM images. The stacking faults, commonly associated with epitaxial growth of close-packed planes, most likely originate on the c-plane sidewalls of three-dimensional (3D) islands that form during the initial stages of the high temperature growth. Consequently, the stacking faults are currently assumed to be intrinsic and terminated by Shockley partial dislocations of opposite sign. Stacking faults with similar characteristics were observed in a-plane AlN films grown on r-plane sapphire substrates. SeeReference 20. The stacking faults have a common faulting plane parallel to the close-packed (0001) and a density of ˜3.8×105 cm−1. - Omega rocking curves were measured for both the GaN on-axis (11
2 0) and off-axis (101 1) reflections to characterize the a-plane GaN crystal quality. The full-width half-maximum (FWHM) of the on-axis peak was 0.29° (1037″), while the off-axis peak exhibited a larger orientational spread with a FWHM of 0.46° (1659″). The large FWHM values are expected since the microstructure contains a substantial dislocation density. According to the analysis presented by Heying et al. for c-GaN films on c-sapphire, on-axis peak widths are broadened by screw and mixed dislocations, while off-axis widths are broadened by edge-component TD's (assuming the TD line is parallel to the film normal). See Reference 21. A relatively large edge dislocation density is expected for a-GaN on r-sapphire due to the broadening of the off-axis peak compared to the on-axis peak. Additional microstructural analyses are required to correlate a-GaN TD geometry to rocking curve measurements. -
FIGS. 7( a) and 7(b) are AFM amplitude and height images, respectively, of the surface of the as-grown a-plane GaN film. The surface pits in the AFM amplitude image ofFIG. 7( a) are uniformly aligned parallel to the GaN c-axis, while the terraces visible in the AFM height image ofFIG. 7( b) are aligned perpendicular to the c-axis. - Although optically specular with a surface RMS roughness of 2.6 nm, the a-GaN growth surface is pitted on a sub-micron scale, as can be clearly observed in the AFM amplitude image shown in
FIG. 7( a). It has been proposed that the surface pits are decorating dislocation terminations with the surface; the dislocation density determined by plan view TEM correlates with the surface pit density within an order of magnitude. - In addition to small surface pits aligned along GaN c-axis [0001], the AFM height image in
FIG. 7( b) reveals faint terraces perpendicular to the c-axis. Although the seams are not clearly defined atomic steps, these crystallographic features could be the early signs of the surface growth mode. At this early point in the development of the a-plane growth process, neither the pits nor the terraces have been correlated to particular defect structures. - 1. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, Japanese Journal of Applied Physics, Part 2 (Letters) 36, L382-5 (1997).
- 2. P. Lefebvre, A. Morel, M. Gallart, T. Taliercio, J. Allegre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, and J. Massies, Applied Physics Letters 78, 1252-4 (2001).
- 3. N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laugt, and J. Massies, J. Appl. Phys. 86 (1999) 3714.
- 4. M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, Phys. Rev. B 60 (1999) 1496.
- 5. R. Langer, J. Simon, V. Ortiz, N. T. Pelekanos, A. Barski, R. Andre, and M. Godlewski, Appl. Phys. Lett. 74 (1999) 3827.
- 6. P. Lefebvre, J. Allegre, B. Gil, H. Mathieu, N. Grandjean, M. Leroux, J. Massies, and P. Bigenwald, Phys. Rev. B 59 (1999) 15363.
- 7. I. Jin Seo, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, Phys. Rev. B 57 (1998) R9435.
- 8. P. Seoung-Hwan and C. Shun-Lien, Appl. Phys. Lett. 76 (2000) 1981.
- 9. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature 406 (2000) 865.
- 10. H. M. Ng, Appl. Phys. Lett. 80 (2002) 4369.
- 11. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81 (2002) 469.
- 12. O. Brandt, P. Waltereit, and K. H. Ploog, J. Phys. D, Appl. Phys. (UK) 35 (2002) 577.
- 13. M. Leszczynski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J. Jun, S. Porowski, K. Pakula, J. M. Baranowski, C. T. Foxon, and T. S. Cheng, Appl. Phys. Lett. 69 (1996) 73.
- 14. A. F. Wright, J. Appl. Phys. 82 (1997) 2833.
- 15. I. H. Tan, G. L. Snider, L. D. Chang, and E. L. Hu, J. Appl. Phys. 68 (1990) 4071.
- 16. E. Yablonovitch and E. O. Kane, Journal of Lightwave Technology LT-4(5), 504-6 (1986).
- 17. T. Sasaki and S. Zembutsu, J. Appl. Phys. 61, 2533 (1987).
- 18. T. Lei, K. F. Ludwig, Jr., and T. D. Moustakas, J. Appl. Phys. 74, 4430 (1993).
- 19. T. D. Moustakas, T. Lei, and R. J. Molnar, Physica B 185, 36 (1993).
- 20. K. Dovidenko, S. Oktyabrsky, and J. Narayan, J. Appl. Phys. 82, 4296 (1997).
- 21. B. Heying, X. H. Wu, A. S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 68, 643 (1996).
- This concludes the description of the preferred embodiment of the present invention. The following describes some alternative embodiments for accomplishing the present invention.
- For example, variations in non-polar (Al,In,Ga)N quantum wells and heterostructures design and MOCVD growth conditions may be used in alternative embodiments. Moreover, the specific thickness and composition of the layers, in addition to the number of quantum wells grown, are variables inherent to quantum well structure design and may be used in alternative embodiments of the present invention.
- Further, the specific MOCVD growth conditions determine the dimensions and compositions of the quantum well structure layers. In this regard, MOCVD growth conditions are reactor dependent and may vary between specific reactor designs. Many variations of this process are possible with the variety of reactor designs currently being using in industry and academia.
- Variations in conditions such as growth temperature, growth pressure, VIII ratio, precursor flows, and source materials are possible without departing from the scope of the present invention. Control of interface quality is another important aspect of the process and is directly related to the flow switching capabilities of particular reactor designs. Continued optimization of the growth conditions will result in more accurate compositional and thickness control of the integrated quantum well layers described above.
- In addition, a number of different growth methods other than MOCVD could be used in the present invention. For example, the growth method could also be molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), hydride vapor phase epitaxy (HVPE), sublimation, or plasma-enhanced chemical vapor deposition (PECVD).
- Further, although non-polar a-plan GaN thin films are described herein, the same techniques are applicable to non-polar m-plane GaN thin films. Moreover, non-polar InN, AlN, and AlInGaN thin films could be created instead of GaN thin films.
- Finally, substrates other than sapphire substrate could be employed for non-polar GaN growth. These substrates include silicon carbide, gallium nitride, silicon, zinc oxide, boron nitride, lithium aluminate, lithium niobate, germanium, aluminum nitride, and lithium gallate.
- In summary, the present invention describes a method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. First, non-polar (11
2 0) a-plane GaN thin film layers are grown on a (11 02) r-plane sapphire substrate using MOCVD. These non-polar (112 0) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. - The foregoing description of one or more embodiments of the invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. Many modifications and variations are possible in light of the above teaching. It is intended that the scope of the invention be limited not by this detailed description, but rather by the claims appended hereto.
Claims (18)
1. A nitride semiconductor device, comprising:
one or more non-polar Group III nitride layers grown on or above a non-polar surface of a Gallium Nitride (GaN) substrate, wherein the non-polar surface of the GaN substrate is a grown surface.
2. The device of claim 1 , wherein the non-polar Group III nitride layers comprise one or more non-polar Group III nitride quantum well layers.
3. The device of claim 2 , wherein at least one of the non-polar Group III nitride quantum well layers has a thickness greater than 5 nanometers and emits light having a peak photoluminescence (PL) emission wavelength and an intensity that are greater than a PL emission wavelength and an intensity of light emitted from a non-polar Group III nitride quantum well layer having a thickness of 5 nanometers or less.
4. The device of claim 1 , wherein the non-polar Group III nitride layers comprise one or more non-polar Group III nitride heterostructures.
5. The device of claim 4 , wherein at least one of the non-polar Group III nitride heterostructures contains a superlattice.
6. The device of claim 5 , wherein the superlattice produces an electrical channel for transistor operation.
7. The device of claim 1 , wherein the GaN substrate is a GaN template.
8. The device of claim 1 , wherein the GaN substrate has a threading dislocation density of no more than 2.6×1010 cm−2.
9. The device of claim 1 , wherein the GaN substrate has a stacking fault density of no more than 3.8×105 cm−1.
10. A method for fabricating a nitride semiconductor device, comprising:
growing one or more non-polar Group III nitride layers on or above a non-polar surface of a Gallium Nitride (GaN) substrate, wherein the non-polar surface of the GaN substrate is a grown surface.
11. The method of claim 10 , wherein the non-polar Group III nitride layers comprise one or more non-polar Group III nitride quantum well layers.
12. The method of claim 11 , wherein at least one of the non-polar Group III nitride quantum well layers has a thickness greater than 5 nanometers and emits light having a peak photoluminescence (PL) emission wavelength and an intensity that are greater than a PL emission wavelength and an intensity of light emitted from a non-polar Group III nitride quantum well layer having a thickness of 5 nanometers or less.
13. The method of claim 10 , wherein the non-polar Group III nitride layers comprise one or more non-polar Group III nitride heterostructures.
14. The method of claim 13 , wherein at least one of the non-polar Group III nitride heterostructures contains a superlattice.
15. The method of claim 14 , wherein the superlattice produces an electrical channel for transistor operation.
16. The method of claim 10 , wherein the GaN substrate is a GaN template.
17. The method of claim 10 , wherein the GaN substrate has a threading dislocation density of no more than 2.6×1010 cm−2.
18. The method of claim 10 , wherein the GaN substrate has a stacking fault density of no more than 3.8×105 cm−1.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI583831B (en) * | 2016-05-31 | 2017-05-21 | 國立中山大學 | Fabrication of m-plane gallium nitride |
Families Citing this family (141)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7361341B2 (en) * | 2001-05-25 | 2008-04-22 | Human Genome Sciences, Inc. | Methods of treating cancer using antibodies that immunospecifically bind to trail receptors |
JP4932121B2 (en) * | 2002-03-26 | 2012-05-16 | 日本電気株式会社 | Method for manufacturing group III-V nitride semiconductor substrate |
US8809867B2 (en) | 2002-04-15 | 2014-08-19 | The Regents Of The University Of California | Dislocation reduction in non-polar III-nitride thin films |
US7208393B2 (en) * | 2002-04-15 | 2007-04-24 | The Regents Of The University Of California | Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy |
WO2004061969A1 (en) * | 2002-12-16 | 2004-07-22 | The Regents Of The University Of California | Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy |
KR101288489B1 (en) * | 2002-04-15 | 2013-07-26 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | Non-polar (Al,B,In,Ga)N Quantum Well and Heterostructure Materials and Devices |
US6900067B2 (en) * | 2002-12-11 | 2005-05-31 | Lumileds Lighting U.S., Llc | Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers |
US7186302B2 (en) * | 2002-12-16 | 2007-03-06 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
US7427555B2 (en) * | 2002-12-16 | 2008-09-23 | The Regents Of The University Of California | Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy |
WO2004084275A2 (en) * | 2003-03-18 | 2004-09-30 | Crystal Photonics, Incorporated | Method for making group iii nitride devices and devices produced thereby |
US20060276043A1 (en) * | 2003-03-21 | 2006-12-07 | Johnson Mark A L | Method and systems for single- or multi-period edge definition lithography |
EP1697965A4 (en) * | 2003-04-15 | 2011-02-09 | Univ California | NON-POLAR (A1, B, In, Ga)N QUANTUM WELLS |
US7323256B2 (en) * | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
US7198970B2 (en) * | 2004-01-23 | 2007-04-03 | The United States Of America As Represented By The Secretary Of The Navy | Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
US7115908B2 (en) * | 2004-01-30 | 2006-10-03 | Philips Lumileds Lighting Company, Llc | III-nitride light emitting device with reduced polarization fields |
US7808011B2 (en) * | 2004-03-19 | 2010-10-05 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting devices including in-plane light emitting layers |
US7408201B2 (en) * | 2004-03-19 | 2008-08-05 | Philips Lumileds Lighting Company, Llc | Polarized semiconductor light emitting device |
KR100718188B1 (en) * | 2004-05-07 | 2007-05-15 | 삼성코닝 주식회사 | Non-polar single crystalline a-plane nitride semiconductor wafer and preparation thereof |
US7504274B2 (en) * | 2004-05-10 | 2009-03-17 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
JP5379973B2 (en) * | 2004-05-10 | 2013-12-25 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic vapor phase epitaxy |
US9011598B2 (en) * | 2004-06-03 | 2015-04-21 | Soitec | Method for making a composite substrate and composite substrate according to the method |
US7956360B2 (en) * | 2004-06-03 | 2011-06-07 | The Regents Of The University Of California | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy |
US8227820B2 (en) * | 2005-02-09 | 2012-07-24 | The Regents Of The University Of California | Semiconductor light-emitting device |
US20060073621A1 (en) * | 2004-10-01 | 2006-04-06 | Palo Alto Research Center Incorporated | Group III-nitride based HEMT device with insulating GaN/AlGaN buffer layer |
JP4806999B2 (en) * | 2004-11-29 | 2011-11-02 | ソニー株式会社 | Method for forming an underlayer comprising a GaN-based compound semiconductor |
WO2006099138A2 (en) | 2005-03-10 | 2006-09-21 | The Regents Of The University Of California | Technique for the growth of planar semi-polar gallium nitride |
KR100593936B1 (en) * | 2005-03-25 | 2006-06-30 | 삼성전기주식회사 | Method of growing non-polar a-plane gallium nitride |
EP1885918B1 (en) * | 2005-05-11 | 2017-01-25 | North Carolina State University | Methods of preparing controlled polarity group iii-nitride films |
US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
US20070267722A1 (en) * | 2006-05-17 | 2007-11-22 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
WO2006125040A2 (en) * | 2005-05-17 | 2006-11-23 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures with reduced dislocation defect densities related methods for device fabrication |
US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
JP2006324465A (en) * | 2005-05-19 | 2006-11-30 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacturing method |
TW200703463A (en) * | 2005-05-31 | 2007-01-16 | Univ California | Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) |
TWI377602B (en) | 2005-05-31 | 2012-11-21 | Japan Science & Tech Agency | Growth of planar non-polar {1-100} m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd) |
WO2006130696A2 (en) | 2005-06-01 | 2006-12-07 | The Regents Of The University Of California | Technique for the growth and fabrication of semipolar (ga,al,in,b)n thin films, heterostructures, and devices |
TWI390633B (en) * | 2005-07-13 | 2013-03-21 | Japan Science & Tech Agency | Lateral growth method for defect reduction of semipolar nitride films |
US7626246B2 (en) * | 2005-07-26 | 2009-12-01 | Amberwave Systems Corporation | Solutions for integrated circuit integration of alternative active area materials |
US20070054467A1 (en) * | 2005-09-07 | 2007-03-08 | Amberwave Systems Corporation | Methods for integrating lattice-mismatched semiconductor structure on insulators |
US7638842B2 (en) * | 2005-09-07 | 2009-12-29 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures on insulators |
JP2007080855A (en) * | 2005-09-09 | 2007-03-29 | Matsushita Electric Ind Co Ltd | Field effect transistor |
CN100344006C (en) * | 2005-10-13 | 2007-10-17 | 南京大学 | Method for developing structure of LED device of InGaN/GaN quantum trap in M faces |
EP1788619A3 (en) * | 2005-11-18 | 2009-09-09 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
JP4807081B2 (en) * | 2006-01-16 | 2011-11-02 | ソニー株式会社 | Method for forming underlayer made of GaN-based compound semiconductor, and method for manufacturing GaN-based semiconductor light-emitting device |
US20120161287A1 (en) * | 2006-01-20 | 2012-06-28 | Japan Science And Technology Agency | METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION |
WO2007084782A2 (en) | 2006-01-20 | 2007-07-26 | The Regents Of The University Of California | Method for improved growth of semipolar (al,in,ga,b)n |
RU2315135C2 (en) | 2006-02-06 | 2008-01-20 | Владимир Семенович Абрамов | Method of growing nonpolar epitaxial heterostructures based on group iii element nitrides |
EP2009148A4 (en) * | 2006-03-20 | 2011-05-25 | Kanagawa Kagaku Gijutsu Akad | Group iii-v nitride layer and method for producing the same |
JP4888857B2 (en) * | 2006-03-20 | 2012-02-29 | 国立大学法人徳島大学 | Group III nitride semiconductor thin film and group III nitride semiconductor light emitting device |
US7777250B2 (en) | 2006-03-24 | 2010-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures and related methods for device fabrication |
KR100809209B1 (en) * | 2006-04-25 | 2008-02-29 | 삼성전기주식회사 | METHOD OF GROWING NON-POLAR m-PLANE NITRIDE SEMICONDUCTOR |
US7723216B2 (en) | 2006-05-09 | 2010-05-25 | The Regents Of The University Of California | In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N |
CN100373548C (en) * | 2006-06-13 | 2008-03-05 | 中国科学院上海光学精密机械研究所 | Method for generating nopolar GaN thick film on lithium aluminate chip |
CN100403567C (en) * | 2006-07-26 | 2008-07-16 | 武汉华灿光电有限公司 | Method for avoiding or reducing V-defect of blue-green light LED material |
WO2008030574A1 (en) | 2006-09-07 | 2008-03-13 | Amberwave Systems Corporation | Defect reduction using aspect ratio trapping |
WO2008036256A1 (en) * | 2006-09-18 | 2008-03-27 | Amberwave Systems Corporation | Aspect ratio trapping for mixed signal applications |
WO2008039534A2 (en) | 2006-09-27 | 2008-04-03 | Amberwave Systems Corporation | Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures |
US7799592B2 (en) * | 2006-09-27 | 2010-09-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tri-gate field-effect transistors formed by aspect ratio trapping |
US20080187018A1 (en) * | 2006-10-19 | 2008-08-07 | Amberwave Systems Corporation | Distributed feedback lasers formed via aspect ratio trapping |
US7589360B2 (en) | 2006-11-08 | 2009-09-15 | General Electric Company | Group III nitride semiconductor devices and methods of making |
KR101192061B1 (en) | 2006-11-14 | 2012-10-17 | 고꾸리쯔 다이가꾸 호우징 오사까 다이가꾸 | GaN CRYSTAL PRODUCING METHOD, GaN CRYSTAL, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND GaN CRYSTAL PRODUCING APPARATUS |
US8193020B2 (en) | 2006-11-15 | 2012-06-05 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition |
WO2008060349A2 (en) * | 2006-11-15 | 2008-05-22 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition |
TWI533351B (en) * | 2006-12-11 | 2016-05-11 | 美國加利福尼亞大學董事會 | Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices |
JP2010512660A (en) * | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Nonpolar and semipolar light emitting devices |
WO2008073414A1 (en) * | 2006-12-12 | 2008-06-19 | The Regents Of The University Of California | Crystal growth of m-plane and semipolar planes of(ai, in, ga, b)n on various substrates |
KR100843474B1 (en) * | 2006-12-21 | 2008-07-03 | 삼성전기주식회사 | Growth method of iii group nitride single crystal and iii group nitride crystal produced by using the same |
GB0702560D0 (en) * | 2007-02-09 | 2007-03-21 | Univ Bath | Production of Semiconductor devices |
JP5363996B2 (en) * | 2007-02-12 | 2013-12-11 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Al (x) Ga (1-x) N cladding-free nonpolar III-nitride based laser diode and light emitting diode |
US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
US7825328B2 (en) | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
WO2008124154A2 (en) | 2007-04-09 | 2008-10-16 | Amberwave Systems Corporation | Photovoltaics on silicon |
US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
US8269251B2 (en) * | 2007-05-17 | 2012-09-18 | Mitsubishi Chemical Corporation | Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting device |
US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
JP4825745B2 (en) * | 2007-07-13 | 2011-11-30 | 日本碍子株式会社 | Method for producing nonpolar group III nitride |
JP4825747B2 (en) * | 2007-07-13 | 2011-11-30 | 日本碍子株式会社 | Method for producing nonpolar plane group III nitride single crystal |
JP4825746B2 (en) * | 2007-07-13 | 2011-11-30 | 日本碍子株式会社 | Method for producing nonpolar group III nitride |
WO2009015350A1 (en) * | 2007-07-26 | 2009-01-29 | S.O.I.Tec Silicon On Insulator Technologies | Epitaxial methods and templates grown by the methods |
JP2010536181A (en) * | 2007-08-08 | 2010-11-25 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Planar nonpolar M-plane III-nitride thin films grown on miscut substrates |
JP2010536182A (en) * | 2007-08-08 | 2010-11-25 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Nonpolar III-nitride light emitting diodes with long wavelength radiation |
JP4869179B2 (en) * | 2007-08-10 | 2012-02-08 | 三洋電機株式会社 | Semiconductor substrate and manufacturing method thereof |
DE112008002387B4 (en) | 2007-09-07 | 2022-04-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure of a multijunction solar cell, method of forming a photonic device, photovoltaic multijunction cell and photovoltaic multijunction cell device, |
US8080469B2 (en) * | 2007-09-19 | 2011-12-20 | The Regents Of The University Of California | Method for increasing the area of non-polar and semi-polar nitride substrates |
US7670933B1 (en) | 2007-10-03 | 2010-03-02 | Sandia Corporation | Nanowire-templated lateral epitaxial growth of non-polar group III nitrides |
KR100998008B1 (en) * | 2007-12-17 | 2010-12-03 | 삼성엘이디 주식회사 | Fabrication method of substrate for forming device and fabrication method of nirtride semiconductor laser diode |
KR101510377B1 (en) * | 2008-01-21 | 2015-04-06 | 엘지이노텍 주식회사 | Method for manufacturing nitride semiconductor and light emitting device having vertical structure |
JP2011511462A (en) | 2008-02-01 | 2011-04-07 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Enhanced polarization of nitride light-emitting diodes by off-axis wafer cutting |
JP2009234906A (en) * | 2008-03-03 | 2009-10-15 | Mitsubishi Chemicals Corp | Nitride semiconductor crystal and manufacturing method of the same |
WO2009110187A1 (en) * | 2008-03-05 | 2009-09-11 | パナソニック株式会社 | Light-emitting element |
WO2009141724A1 (en) * | 2008-05-23 | 2009-11-26 | S.O.I.Tec Silicon On Insulator Technologies | Formation of substantially pit free indium gallium nitride |
US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
CN100565804C (en) * | 2008-07-04 | 2009-12-02 | 中国科学院上海微系统与信息技术研究所 | SiO in the HVPE method growing gallium nitride film 2Nanometer mask and method |
US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
US8673074B2 (en) * | 2008-07-16 | 2014-03-18 | Ostendo Technologies, Inc. | Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE) |
US7915178B2 (en) * | 2008-07-30 | 2011-03-29 | North Carolina State University | Passivation of aluminum nitride substrates |
JP2012501089A (en) * | 2008-08-28 | 2012-01-12 | ソイテック | Monitoring and control of chloride gas flow by UV absorption. |
JP5416212B2 (en) | 2008-09-19 | 2014-02-12 | 台湾積體電路製造股▲ふん▼有限公司 | Device formation by epitaxial layer growth |
US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
KR100988478B1 (en) | 2008-11-12 | 2010-10-18 | 전자부품연구원 | Fabricating method for the non or semi polar III-nitride epi layers and the same |
TWI380368B (en) * | 2009-02-04 | 2012-12-21 | Univ Nat Chiao Tung | Manufacture method of a multilayer structure having non-polar a-plane {11-20} iii-nitride layer |
TWI398908B (en) * | 2009-02-27 | 2013-06-11 | Lextar Electronics Corp | Method for forming semiconductor layer |
JP5095653B2 (en) * | 2009-03-23 | 2012-12-12 | 日本電信電話株式会社 | Nitride semiconductor structure |
CN102379046B (en) | 2009-04-02 | 2015-06-17 | 台湾积体电路制造股份有限公司 | Devices formed from a non-polar plane of a crystalline material and method of making the same |
WO2010113423A1 (en) * | 2009-04-03 | 2010-10-07 | パナソニック株式会社 | Method for growing crystals of nitride semiconductor, and process for manufacture of semiconductor device |
TWI362772B (en) * | 2009-05-07 | 2012-04-21 | Lextar Electronics Corp | Fabrication method of light emitting diode |
TW201123530A (en) * | 2009-06-05 | 2011-07-01 | Univ California | Long wavelength nonpolar and semipolar (Al,Ga,In) N based laser diodes |
US8629065B2 (en) * | 2009-11-06 | 2014-01-14 | Ostendo Technologies, Inc. | Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE) |
KR101135950B1 (en) * | 2009-11-23 | 2012-04-18 | 전자부품연구원 | A semiconductor and a fabrication method thereof |
US20120063987A1 (en) * | 2010-03-15 | 2012-03-15 | The Regents Of The University Of California | Group-iii nitride crystal ammonothermally grown using an initially off-oriented non-polar or semi-polar growth surface of a group-iii nitride seed crystal |
TWI414087B (en) * | 2010-08-16 | 2013-11-01 | Univ Nat Sun Yat Sen | Method for growing a nonpolar gan layer on a sapphire substrate and a led structure thereof |
CN102146585A (en) * | 2011-01-04 | 2011-08-10 | 武汉华炬光电有限公司 | Non-polar surface GaN epitaxial wafer and preparation method of non-polar surface GaN epitaxial wafer |
US20130025531A1 (en) * | 2011-07-25 | 2013-01-31 | Capano Michael A | Methods for modifying crystallographic symmetry on the surface of a silicon wafer |
EP2752894A3 (en) | 2011-08-09 | 2014-10-22 | Panasonic Corporation | Semiconductor light-emitting device and light source device including the same |
JP5416754B2 (en) * | 2011-11-15 | 2014-02-12 | フューチャー ライト リミテッド ライアビリティ カンパニー | Semiconductor substrate and manufacturing method thereof |
WO2013158210A2 (en) | 2012-02-17 | 2013-10-24 | Yale University | Heterogeneous material integration through guided lateral growth |
SG11201406151TA (en) * | 2012-03-29 | 2014-10-30 | Agency Science Tech & Res | Iii-nitride high electron mobility transistor structures and methods for fabrication of same |
JP6211057B2 (en) | 2012-04-16 | 2017-10-11 | センサー エレクトロニック テクノロジー インコーポレイテッド | Inhomogeneous multiple quantum well structure |
WO2014054284A1 (en) | 2012-10-05 | 2014-04-10 | パナソニック株式会社 | Nitride semiconductor structure, laminate structure, and nitride semiconductor light-emitting element |
KR101998339B1 (en) * | 2012-11-16 | 2019-07-09 | 삼성전자주식회사 | Method for controlling growth crystallographic plane of metal oxide semiconductor and metal oxide semiconductor structure having controlled growth crystallographic plane |
CN103178171B (en) * | 2013-02-28 | 2015-08-05 | 溧阳市宏达电机有限公司 | A kind of high brightness LED |
CN103215647A (en) * | 2013-03-27 | 2013-07-24 | 上海萃智科技发展有限公司 | Non-polar a-side GaN film growth method |
KR102140789B1 (en) | 2014-02-17 | 2020-08-03 | 삼성전자주식회사 | Evaluating apparatus for quality of crystal, and Apparatus and method for manufacturing semiconductor light emitting device which include the same |
KR101591677B1 (en) | 2014-09-26 | 2016-02-18 | 광주과학기술원 | Method for growing nitride-based semiconductor with high quality |
US9668573B2 (en) | 2014-11-05 | 2017-06-06 | Larry A. Salani | Wine bottle rack-building kit, packaging, and method |
JP6569727B2 (en) | 2015-02-23 | 2019-09-04 | 三菱ケミカル株式会社 | C-plane GaN substrate |
US11322652B2 (en) * | 2015-12-14 | 2022-05-03 | Ostendo Technologies, Inc. | Methods for producing composite GaN nanocolumns and light emitting structures made from the methods |
US9608160B1 (en) | 2016-02-05 | 2017-03-28 | International Business Machines Corporation | Polarization free gallium nitride-based photonic devices on nanopatterned silicon |
KR20190038639A (en) | 2016-08-12 | 2019-04-08 | 예일 유니버시티 | Stacked defect-free semi-polar and non-polar GaN grown on a foreign substrate by removing the nitrogen- |
WO2018217973A1 (en) * | 2017-05-26 | 2018-11-29 | Yale University | Nitrogen-polar and semipolar gan layers and devices formed on sapphire with a high-temperature a1n buffer |
CN109425442B (en) * | 2017-08-22 | 2020-07-24 | 北京自动化控制设备研究所 | Simple calibration method for internal temperature of atomic gas chamber |
US10892159B2 (en) | 2017-11-20 | 2021-01-12 | Saphlux, Inc. | Semipolar or nonpolar group III-nitride substrates |
US10373825B1 (en) * | 2018-05-29 | 2019-08-06 | Industry-University Cooperation Foundation Hanyang University | Method for manufacturing gallium nitride substrate using core-shell nanoparticle |
WO2020095179A1 (en) | 2018-11-05 | 2020-05-14 | King Abdullah University Of Science And Technology | Optoelectronic semiconductor device |
JPWO2020171147A1 (en) * | 2019-02-22 | 2021-12-16 | 三菱ケミカル株式会社 | GaN crystal and substrate |
CN110061104B (en) * | 2019-02-28 | 2020-08-14 | 华灿光电(苏州)有限公司 | Method for manufacturing gallium nitride-based light emitting diode epitaxial wafer |
CN110129765B (en) * | 2019-05-23 | 2021-04-02 | 广东省半导体产业技术研究院 | Nitride semiconductor material and preparation method thereof |
CN110517949B (en) * | 2019-07-29 | 2021-05-11 | 太原理工大学 | By using SiO2Method for preparing nonpolar a-plane GaN epitaxial layer as substrate |
CN114784123A (en) * | 2022-03-18 | 2022-07-22 | 华南理工大学 | Nonpolar a-surface GaN-based ultraviolet photoelectric detector and preparation method thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5670798A (en) * | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
US6072197A (en) * | 1996-02-23 | 2000-06-06 | Fujitsu Limited | Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy |
US6153010A (en) * | 1997-04-11 | 2000-11-28 | Nichia Chemical Industries Ltd. | Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device |
US6399966B1 (en) * | 2000-09-08 | 2002-06-04 | Sharp Kabushiki Kaisha | Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same |
US6608330B1 (en) * | 1998-09-21 | 2003-08-19 | Nichia Corporation | Light emitting device |
Family Cites Families (135)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US372909A (en) | 1887-11-08 | Method of making dress-forms | ||
JPH033233A (en) * | 1989-05-30 | 1991-01-09 | Nippon Telegr & Teleph Corp <Ntt> | Growth method for compound semiconductor single crystal thin film |
US5290393A (en) * | 1991-01-31 | 1994-03-01 | Nichia Kagaku Kogyo K.K. | Crystal growth method for gallium nitride-based compound semiconductor |
US5633192A (en) * | 1991-03-18 | 1997-05-27 | Boston University | Method for epitaxially growing gallium nitride layers |
US5306662A (en) * | 1991-11-08 | 1994-04-26 | Nichia Chemical Industries, Ltd. | Method of manufacturing P-type compound semiconductor |
JP2540791B2 (en) * | 1991-11-08 | 1996-10-09 | 日亜化学工業株式会社 | A method for manufacturing a p-type gallium nitride-based compound semiconductor. |
US5432808A (en) * | 1993-03-15 | 1995-07-11 | Kabushiki Kaisha Toshiba | Compound semicondutor light-emitting device |
US5679152A (en) * | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
US6440823B1 (en) * | 1994-01-27 | 2002-08-27 | Advanced Technology Materials, Inc. | Low defect density (Ga, Al, In)N and HVPE process for making same |
US6958093B2 (en) * | 1994-01-27 | 2005-10-25 | Cree, Inc. | Free-standing (Al, Ga, In)N and parting method for forming same |
US5974069A (en) * | 1994-09-16 | 1999-10-26 | Rohm Co., Ltd | Semiconductor laser and manufacturing method thereof |
US5777350A (en) * | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
JP3599896B2 (en) * | 1995-05-19 | 2004-12-08 | 三洋電機株式会社 | Semiconductor laser device and method for manufacturing semiconductor laser device |
JP2839077B2 (en) * | 1995-06-15 | 1998-12-16 | 日本電気株式会社 | Gallium nitride based compound semiconductor light emitting device |
JPH09116225A (en) * | 1995-10-20 | 1997-05-02 | Hitachi Ltd | Semiconductor light emitting device |
JP3816176B2 (en) * | 1996-02-23 | 2006-08-30 | 富士通株式会社 | Semiconductor light emitting device and optical semiconductor device |
US5923950A (en) * | 1996-06-14 | 1999-07-13 | Matsushita Electric Industrial Co., Inc. | Method of manufacturing a semiconductor light-emitting device |
US5784187A (en) * | 1996-07-23 | 1998-07-21 | Lucent Technologies Inc. | Wafer level integration of an optical modulator and III-V photodetector |
US6177292B1 (en) * | 1996-12-05 | 2001-01-23 | Lg Electronics Inc. | Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate |
JP3488587B2 (en) * | 1997-01-09 | 2004-01-19 | 株式会社東芝 | Boost circuit and IC card having the same |
JP3139445B2 (en) * | 1997-03-13 | 2001-02-26 | 日本電気株式会社 | GaN-based semiconductor growth method and GaN-based semiconductor film |
JPH11191657A (en) * | 1997-04-11 | 1999-07-13 | Nichia Chem Ind Ltd | Growing method of nitride semiconductor and nitride semiconductor device |
US6069021A (en) * | 1997-05-14 | 2000-05-30 | Showa Denko K.K. | Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer |
JPH10335637A (en) * | 1997-05-30 | 1998-12-18 | Sony Corp | Hetero-junction field effect transistor |
JP3496512B2 (en) * | 1997-06-30 | 2004-02-16 | 日亜化学工業株式会社 | Nitride semiconductor device |
JP3813740B2 (en) | 1997-07-11 | 2006-08-23 | Tdk株式会社 | Substrates for electronic devices |
JPH11340580A (en) | 1997-07-30 | 1999-12-10 | Fujitsu Ltd | Semiconductor laser, semiconductor light-emitting element and its manufacture |
US5926726A (en) * | 1997-09-12 | 1999-07-20 | Sdl, Inc. | In-situ acceptor activation in group III-v nitride compound semiconductors |
US6849472B2 (en) * | 1997-09-30 | 2005-02-01 | Lumileds Lighting U.S., Llc | Nitride semiconductor device with reduced polarization fields |
JP3955367B2 (en) * | 1997-09-30 | 2007-08-08 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | Optical semiconductor device and manufacturing method thereof |
US6201262B1 (en) * | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
US6051849A (en) * | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
CA2321118C (en) * | 1998-02-27 | 2008-06-03 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby |
JP3988245B2 (en) * | 1998-03-12 | 2007-10-10 | ソニー株式会社 | Nitride III-V compound semiconductor growth method and semiconductor device manufacturing method |
JPH11346002A (en) * | 1998-04-01 | 1999-12-14 | Matsushita Electric Ind Co Ltd | Manufacture of p-type gallium nitride based compound semiconductor |
US6086673A (en) * | 1998-04-02 | 2000-07-11 | Massachusetts Institute Of Technology | Process for producing high-quality III-V nitride substrates |
US6294440B1 (en) * | 1998-04-10 | 2001-09-25 | Sharp Kabushiki Kaisha | Semiconductor substrate, light-emitting device, and method for producing the same |
JP3995790B2 (en) * | 1998-04-10 | 2007-10-24 | シャープ株式会社 | Crystal manufacturing method |
JPH11297631A (en) | 1998-04-14 | 1999-10-29 | Matsushita Electron Corp | Method for growing nitride system compound semiconductor |
US6180270B1 (en) * | 1998-04-24 | 2001-01-30 | The United States Of America As Represented By The Secretary Of The Army | Low defect density gallium nitride epilayer and method of preparing the same |
US6064078A (en) * | 1998-05-22 | 2000-05-16 | Xerox Corporation | Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities |
TW417315B (en) | 1998-06-18 | 2001-01-01 | Sumitomo Electric Industries | GaN single crystal substrate and its manufacture method of the same |
US6218280B1 (en) * | 1998-06-18 | 2001-04-17 | University Of Florida | Method and apparatus for producing group-III nitrides |
JP2000058917A (en) * | 1998-08-07 | 2000-02-25 | Pioneer Electron Corp | Iii-group nitride semiconductor light-emitting device and its manufacture |
US6271104B1 (en) * | 1998-08-10 | 2001-08-07 | Mp Technologies | Fabrication of defect free III-nitride materials |
JP2000068609A (en) | 1998-08-24 | 2000-03-03 | Ricoh Co Ltd | Semiconductor substrate and semiconductor laser |
JP3592553B2 (en) * | 1998-10-15 | 2004-11-24 | 株式会社東芝 | Gallium nitride based semiconductor device |
WO2000033388A1 (en) * | 1998-11-24 | 2000-06-08 | Massachusetts Institute Of Technology | METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES |
JP4304750B2 (en) | 1998-12-08 | 2009-07-29 | 日亜化学工業株式会社 | Nitride semiconductor growth method and nitride semiconductor device |
JP3794530B2 (en) * | 1998-12-24 | 2006-07-05 | 日亜化学工業株式会社 | Nitride semiconductor laser device |
JP2000216497A (en) * | 1999-01-22 | 2000-08-04 | Sanyo Electric Co Ltd | Semiconductor element and its manufacture |
JP4097343B2 (en) | 1999-01-26 | 2008-06-11 | 日亜化学工業株式会社 | Manufacturing method of nitride semiconductor laser device |
US6177057B1 (en) * | 1999-02-09 | 2001-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Process for preparing bulk cubic gallium nitride |
JP3754226B2 (en) * | 1999-03-25 | 2006-03-08 | 三洋電機株式会社 | Semiconductor light emitting device |
JP3375064B2 (en) * | 1999-04-02 | 2003-02-10 | 日亜化学工業株式会社 | Method for growing nitride semiconductor |
JP3587081B2 (en) | 1999-05-10 | 2004-11-10 | 豊田合成株式会社 | Method of manufacturing group III nitride semiconductor and group III nitride semiconductor light emitting device |
JP2001007394A (en) | 1999-06-18 | 2001-01-12 | Ricoh Co Ltd | Semiconductor substrate, manufacture thereof and semiconductor light emitting element |
JP4329166B2 (en) | 1999-06-23 | 2009-09-09 | 昭和電工株式会社 | Group III nitride semiconductor optical device |
JP2001010898A (en) | 1999-06-24 | 2001-01-16 | Nec Corp | Crystal substrate and its production |
JP3857467B2 (en) * | 1999-07-05 | 2006-12-13 | 独立行政法人科学技術振興機構 | Gallium nitride compound semiconductor and manufacturing method thereof |
US6265089B1 (en) * | 1999-07-15 | 2001-07-24 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices grown on off-axis sapphire substrate |
US6268621B1 (en) * | 1999-08-03 | 2001-07-31 | International Business Machines Corporation | Vertical channel field effect transistor |
US6590336B1 (en) * | 1999-08-31 | 2003-07-08 | Murata Manufacturing Co., Ltd. | Light emitting device having a polar plane piezoelectric film and manufacture thereof |
US6455877B1 (en) * | 1999-09-08 | 2002-09-24 | Sharp Kabushiki Kaisha | III-N compound semiconductor device |
JP4424840B2 (en) * | 1999-09-08 | 2010-03-03 | シャープ株式会社 | III-N compound semiconductor device |
US6398867B1 (en) * | 1999-10-06 | 2002-06-04 | General Electric Company | Crystalline gallium nitride and method for forming crystalline gallium nitride |
US6812053B1 (en) | 1999-10-14 | 2004-11-02 | Cree, Inc. | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures |
JP2001119066A (en) * | 1999-10-18 | 2001-04-27 | Matsushita Electric Ind Co Ltd | Method of producing gallium nitride compound semiconductor |
JP2001160656A (en) | 1999-12-01 | 2001-06-12 | Sharp Corp | Nitride compound semiconductor device |
US6515313B1 (en) * | 1999-12-02 | 2003-02-04 | Cree Lighting Company | High efficiency light emitters with reduced polarization-induced charges |
KR100388011B1 (en) * | 2000-01-17 | 2003-06-18 | 삼성전기주식회사 | SAW Filter by GaN single crystal thin film and A Method for Manufacturing It |
US6566231B2 (en) * | 2000-02-24 | 2003-05-20 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing high performance semiconductor device with reduced lattice defects in the active region |
US6596079B1 (en) * | 2000-03-13 | 2003-07-22 | Advanced Technology Materials, Inc. | III-V nitride substrate boule and method of making and using the same |
JP3557441B2 (en) * | 2000-03-13 | 2004-08-25 | 日本電信電話株式会社 | Nitride semiconductor substrate and method of manufacturing the same |
US6447604B1 (en) * | 2000-03-13 | 2002-09-10 | Advanced Technology Materials, Inc. | Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices |
JP3946427B2 (en) | 2000-03-29 | 2007-07-18 | 株式会社東芝 | Epitaxial growth substrate manufacturing method and semiconductor device manufacturing method using this epitaxial growth substrate |
JP2001298215A (en) * | 2000-04-14 | 2001-10-26 | Nichia Chem Ind Ltd | Light-emitting element |
US6534332B2 (en) * | 2000-04-21 | 2003-03-18 | The Regents Of The University Of California | Method of growing GaN films with a low density of structural defects using an interlayer |
KR20010103998A (en) * | 2000-05-12 | 2001-11-24 | 이계안 | Curren leakage preventy system and method for hybrid electric vehicle |
JP2001326385A (en) * | 2000-05-16 | 2001-11-22 | Sony Corp | Method of manufacturing semiconductor light-emitting element |
GB2363518A (en) * | 2000-06-17 | 2001-12-19 | Sharp Kk | A method of growing a nitride layer on a GaN substrate |
JP3968968B2 (en) * | 2000-07-10 | 2007-08-29 | 住友電気工業株式会社 | Manufacturing method of single crystal GaN substrate |
JP4556300B2 (en) * | 2000-07-18 | 2010-10-06 | ソニー株式会社 | Crystal growth method |
US6680959B2 (en) * | 2000-07-18 | 2004-01-20 | Rohm Co., Ltd. | Semiconductor light emitting device and semiconductor laser |
US6610144B2 (en) * | 2000-07-21 | 2003-08-26 | The Regents Of The University Of California | Method to reduce the dislocation density in group III-nitride films |
JP4327339B2 (en) * | 2000-07-28 | 2009-09-09 | 独立行政法人物質・材料研究機構 | Semiconductor layer forming substrate and semiconductor device using the same |
EP2276059A1 (en) * | 2000-08-04 | 2011-01-19 | The Regents of the University of California | Method of controlling stress in gallium nitride films deposited on substrates |
US6586819B2 (en) * | 2000-08-14 | 2003-07-01 | Nippon Telegraph And Telephone Corporation | Sapphire substrate, semiconductor device, electronic component, and crystal growing method |
JP2002076521A (en) * | 2000-08-30 | 2002-03-15 | Nippon Telegr & Teleph Corp <Ntt> | Nitride semiconductor light emitting element |
JP4154558B2 (en) | 2000-09-01 | 2008-09-24 | 日本電気株式会社 | Semiconductor device |
JP2002094113A (en) * | 2000-09-19 | 2002-03-29 | Sharp Corp | Method for fabricating iii-v nitride-based semiconductor light emitting device |
KR100550158B1 (en) | 2000-09-21 | 2006-02-08 | 샤프 가부시키가이샤 | Nitride Semiconductor Light Emitting Element and Optical Device Containing it |
JP2002100838A (en) * | 2000-09-21 | 2002-04-05 | Sharp Corp | Nitride semiconductor light-emitting element and optical device |
JP2002111134A (en) * | 2000-09-29 | 2002-04-12 | Toshiba Corp | Semiconductor laser device |
US6649287B2 (en) * | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
US6635901B2 (en) | 2000-12-15 | 2003-10-21 | Nobuhiko Sawaki | Semiconductor device including an InGaAIN layer |
US6599362B2 (en) * | 2001-01-03 | 2003-07-29 | Sandia Corporation | Cantilever epitaxial process |
US6576932B2 (en) * | 2001-03-01 | 2003-06-10 | Lumileds Lighting, U.S., Llc | Increasing the brightness of III-nitride light emitting devices |
US6882051B2 (en) * | 2001-03-30 | 2005-04-19 | The Regents Of The University Of California | Nanowires, nanostructures and devices fabricated therefrom |
US6773504B2 (en) * | 2001-04-12 | 2004-08-10 | Sumitomo Electric Industries, Ltd. | Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate |
US6627551B2 (en) * | 2001-06-06 | 2003-09-30 | United Microelectronics Corp. | Method for avoiding microscratch in interlevel dielectric layer chemical mechanical polishing process |
AU2002328130B2 (en) * | 2001-06-06 | 2008-05-29 | Ammono Sp. Z O.O. | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
US7501023B2 (en) * | 2001-07-06 | 2009-03-10 | Technologies And Devices, International, Inc. | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
JP4055503B2 (en) * | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | Semiconductor light emitting device |
JP4111696B2 (en) * | 2001-08-08 | 2008-07-02 | 三洋電機株式会社 | Nitride semiconductor laser device |
US6977953B2 (en) * | 2001-07-27 | 2005-12-20 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device and method of fabricating the same |
JP2003060298A (en) * | 2001-08-08 | 2003-02-28 | Nichia Chem Ind Ltd | Semiconductor light-emitting device and method of manufacturing the same |
US7105865B2 (en) * | 2001-09-19 | 2006-09-12 | Sumitomo Electric Industries, Ltd. | AlxInyGa1−x−yN mixture crystal substrate |
JP4388720B2 (en) * | 2001-10-12 | 2009-12-24 | 住友電気工業株式会社 | Manufacturing method of semiconductor light emitting device |
KR100679387B1 (en) * | 2001-10-26 | 2007-02-05 | 암모노 에스피. 제트오. 오. | Nitride semiconductor laser devise and manufacturing method thereof |
CA2464083C (en) | 2001-10-26 | 2011-08-02 | Ammono Sp. Z O.O. | Substrate for epitaxy |
US6617261B2 (en) * | 2001-12-18 | 2003-09-09 | Xerox Corporation | Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates |
US6969426B1 (en) * | 2002-02-26 | 2005-11-29 | Bliss David F | Forming improved metal nitrides |
US7063741B2 (en) * | 2002-03-27 | 2006-06-20 | General Electric Company | High pressure high temperature growth of crystalline group III metal nitrides |
WO2004061969A1 (en) | 2002-12-16 | 2004-07-22 | The Regents Of The University Of California | Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy |
US7208393B2 (en) * | 2002-04-15 | 2007-04-24 | The Regents Of The University Of California | Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy |
KR101288489B1 (en) * | 2002-04-15 | 2013-07-26 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | Non-polar (Al,B,In,Ga)N Quantum Well and Heterostructure Materials and Devices |
US20060138431A1 (en) * | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
SG130935A1 (en) * | 2002-06-26 | 2007-04-26 | Agency Science Tech & Res | Method of cleaving gan/sapphire for forming laser mirror facets |
JP4201541B2 (en) | 2002-07-19 | 2008-12-24 | 豊田合成株式会社 | Semiconductor crystal manufacturing method and group III nitride compound semiconductor light emitting device manufacturing method |
US7119359B2 (en) * | 2002-12-05 | 2006-10-10 | Research Foundation Of The City University Of New York | Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures |
US6876009B2 (en) | 2002-12-09 | 2005-04-05 | Nichia Corporation | Nitride semiconductor device and a process of manufacturing the same |
US7186302B2 (en) * | 2002-12-16 | 2007-03-06 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
US7098487B2 (en) * | 2002-12-27 | 2006-08-29 | General Electric Company | Gallium nitride crystal and method of making same |
EP1697965A4 (en) | 2003-04-15 | 2011-02-09 | Univ California | NON-POLAR (A1, B, In, Ga)N QUANTUM WELLS |
US6886375B2 (en) * | 2003-06-27 | 2005-05-03 | Paul J. Amo | Handcuff restraint mechanism and method of use |
US7170095B2 (en) * | 2003-07-11 | 2007-01-30 | Cree Inc. | Semi-insulating GaN and method of making the same |
US6847057B1 (en) * | 2003-08-01 | 2005-01-25 | Lumileds Lighting U.S., Llc | Semiconductor light emitting devices |
US7808011B2 (en) * | 2004-03-19 | 2010-10-05 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting devices including in-plane light emitting layers |
US7432142B2 (en) * | 2004-05-20 | 2008-10-07 | Cree, Inc. | Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
US7303632B2 (en) * | 2004-05-26 | 2007-12-04 | Cree, Inc. | Vapor assisted growth of gallium nitride |
JP4883931B2 (en) * | 2005-04-26 | 2012-02-22 | 京セラ株式会社 | Manufacturing method of semiconductor laminated substrate |
TW200610150A (en) * | 2004-08-30 | 2006-03-16 | Kyocera Corp | Sapphire baseplate, epitaxial substrate and semiconductor device |
JP5113330B2 (en) * | 2005-11-30 | 2013-01-09 | ローム株式会社 | Gallium nitride semiconductor light emitting device |
-
2003
- 2003-04-15 KR KR1020047016454A patent/KR101288489B1/en active IP Right Grant
- 2003-04-15 EP EP11154076.1A patent/EP2316989A3/en not_active Ceased
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5670798A (en) * | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
US6072197A (en) * | 1996-02-23 | 2000-06-06 | Fujitsu Limited | Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy |
US6153010A (en) * | 1997-04-11 | 2000-11-28 | Nichia Chemical Industries Ltd. | Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device |
US6608330B1 (en) * | 1998-09-21 | 2003-08-19 | Nichia Corporation | Light emitting device |
US6399966B1 (en) * | 2000-09-08 | 2002-06-04 | Sharp Kabushiki Kaisha | Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same |
US20020158249A1 (en) * | 2000-09-08 | 2002-10-31 | Sharp Kabushiki Kaisha | Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI583831B (en) * | 2016-05-31 | 2017-05-21 | 國立中山大學 | Fabrication of m-plane gallium nitride |
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