US20110235149A1 - Total internal reflection modulator - Google Patents
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- US20110235149A1 US20110235149A1 US12/730,305 US73030510A US2011235149A1 US 20110235149 A1 US20110235149 A1 US 20110235149A1 US 73030510 A US73030510 A US 73030510A US 2011235149 A1 US2011235149 A1 US 2011235149A1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0327—Operation of the cell; Circuit arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/19—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on variable-reflection or variable-refraction elements not provided for in groups G02F1/015 - G02F1/169
- G02F1/195—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on variable-reflection or variable-refraction elements not provided for in groups G02F1/015 - G02F1/169 by using frustrated reflection
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/31—Digital deflection, i.e. optical switching
- G02F1/315—Digital deflection, i.e. optical switching based on the use of controlled internal reflection
Abstract
Description
- Reference is made to commonly-assigned copending U.S. patent application Ser. No. ______ (Attorney Docket No. 96178/NAB), filed herewith, entitled IMPROVED TOTAL INTERAL REFLECTION MODULATOR, by Ko et al., the disclosure of which is incorporated herein.
- The invention relates to apparatus for forming images on a surface, and more particularly to improvements to light modulators that employ electro-optic materials.
- Electro-optic materials are those whose optical properties change in accordance with the strength of an electric field established within them. These materials make possible an electrically controlled electro-optic modulator for use in a light valve array.
- One well known form of electro-optic modulators are total internal reflection (DR) modulators which can be employed in laser-based imaging systems for example.
FIGS. 1A and 1B schematically show plan and side views of aconventional TIR modulator 10 comprising amember 12 which includes an electro-optic material and a plurality ofelectrodes surface 18 ofmember 12.Surfaces input radiation 25 to refract and undergo total internal reflection atsurface 18. - In this typical conventional configuration,
various electrodes electrodes 15 in each of the groups are driven with a corresponding one of individually addressable voltages sources V1, V2, V3, V4 . . . Vn which are operated in accordance with various image data signals. To simplify interconnect and driver requirements, allelectrodes 16 are interconnected to a common source (e.g. a ground potential). In this case,electrodes 16 are coupled in a serpentine fashion among all the electrode groups S. - Upon the application of a suitable voltage by one of the voltage sources V1, V2, V3, V4 . . . Vn to an associated one of the electrode groups S1, S2, S3, S4 . . . Sn, an electric field is established in a portion of the of the electro-optic material referred to as a pixel region 11 (i.e. shown in broken lines). In this regard, an electrode group S is associated with each
pixel region 11.FIG. 1B shows that eachpixel region 11 includes a portion ofsurface 18 that is impinged byradiation 25. - The application of the voltage alters the refractive index of the electro-optic material, thereby changing a birefringent state of the
pixel region 11. Under the application the corresponding drive voltage, the arrangement ofelectrodes pixel regions 11 can therefore be changed in accordance with the selective application of various voltages by an associated one of voltage sources V1, V2, V3, V4 . . . Vn. For example, in this case when no voltage is applied to a particular electrode group S, an associatedpixel region 11 assumes a first birefringent state in whichoutput radiation 27 is emitted fromsurface 22 and is directed by one or more lenses (not shown) towards a surface of a recording media (also not shown) to form an image pixel thereon. In the case when a suitable voltage is applied to a particular electrode group S, the associatedpixel region 11 assumes a second birefringent state in whichoutput radiation 27 is emitted fromsurface 22 in a diffracted form which can be blocked by an obstruction such as an aperture (also not shown) to not form an image pixel. - Various image features are formed on a recording media by combining image pixels into arrangements representative of the image features. It is a common desire to form high quality images with reduced levels of artifacts. In particular, the visual quality of the formed image features is typically dependant on the visual characteristics of the formed image pixels themselves. For example, one important characteristic is the contrast between an image feature and surrounding regions of the recording media. Poor contrast can lead to the formation of various image features whose edges lack sharpness or are otherwise poorly defined. Another important characteristic is the accurate placement of the image pixels on the recording media.
- The previously described conventional method of driving the arrangement of
electrodes output radiation 27 can arise.FIG. 1C schematically shows a subset of electrode groups S1, S2, S3, and S4 driven with various voltage levels by their corresponding voltage sources as follows: (V1:V); (V2:V); (V3: 0); and (V4: V). Voltage level “V” corresponds to a drive voltage level selected to cause substantial diffraction to be created within apixel region 11 whereas voltage level “0” corresponds to a voltage level (i.e. a ground potential in this case) selected to not cause substantial diffraction to be created within apixel region 11. When apixel region 11 is made non-diffracting (e.g. thepixel region 11 corresponding to electrode group S3), the average electric potential of theelectrodes pixel region 11 is made diffracting (e.g. thepixel regions 11 corresponding to electrode groups S1, S2 and S4) the average electric potential of theelectrodes pixel region 11 is approximately V/2. This creates an electric potential difference of V/2 between the average voltages of non-diffracting and diffracting regions ofTIR modulator 10. This can give rise to long-range electric fields that deflect radiation that is propagated within the electro-optic material to produce a beam steering effect. Although the long-range fields can be relatively weak, they typically interact with the radiation over a longer path length than the shorter range diffraction grating fields.TIR modulator 10 is an example of an “unbalanced” TIR modulator. - One possible consequence of this deflection is that image pixels formed on the recording media can be shifted and a placement error arises. The degree of the placement error can vary in accordance with the image data which controls the selective application of the drive voltages. Another possible consequence can include an increase in the diffraction broadening of an image pixel since the
output radiation 27 is deflected to one side in the pupil of the imaging system, thereby reducing the effective aperture of the system. Other possible consequences can include an increased sensitivity to aberrations in the imaging system. - Commonly-assigned U.S. Pat. No. 7,656,571 B1 (Reynolds) describes a total internal light modulator in which potential differences between diffracting and non-diffracting regions of the modulator are balanced.
FIGS. 2A and 2B schematically show corresponding plan and side views of aTIR modulator 100 similar to a modulator described in U.S. Pat. No. 7,656,571.TIR modulator 100 includes amember 112 comprising an electro-optic material 113. A plurality ofelectrodes surface 118 ofmember 112.Member 112 includessurfaces radiation 125 to refract and undergo total internal reflection atsurface 118. - As shown in
FIG. 2A , each of theelectrodes travel 126 ofradiation 125. As shown inFIG. 2A ,electrodes 115 are arranged in a plurality of first sets whileelectrodes 116 are arranged in a plurality of second sets. Each set ofelectrodes 115 is electrically driven by a corresponding one of individually controllable first voltage sources: VJ1, VJ2, VJ3, VJ4 . . . VJn (i.e. collectively referred to as first voltage sources VJ) via a corresponding one of a plurality ofelectrical conductors 128A arranged onsurface 118. Each set ofelectrodes 116 is electrically driven by a corresponding one of individually controllable second voltage sources: VK1, VK2, VK3, VK4 . . . VKn (i.e. collectively referred to as second voltage sources VK) via a corresponding one of a plurality ofelectrical conductors 128B arranged onsurface 118. In this case, each of the first voltage sources VJ is coupled to an associated one of theelectrical conductors 128A at aninterconnect element 130A provided onsurface 118. In this case, each of the second voltage sources VK is coupled to an associated one of theelectrical conductors 128B at aninterconnect element 130B provided onsurface 118. Each of theelectrical conductors FIGS. 2A and 2B show that each of theelectrical conductors 128A extends over anon-pixel region 132A and that each of theelectrical conductors 128B extends over a secondnon-pixel region 132B. As shown inFIG. 2B , neither ofnon-pixel regions surface 118 that is impinged byradiation 125.Pixel regions 110 andnon-pixel regions FIG. 2A . - Each set of
electrodes 115 is arranged with a set ofelectrodes 116 such that their respective electrodes are interdigitated with respect to one another within an associated one of electrode groups T1, T2, T3, T4 . . . Tn (i.e. collectively referred to as electrode groups T). As shown inFIGS. 2A and 2B each electrode group T is associated with one of a plurality ofpixel regions 110 that are directly impinged byradiation 125. -
FIG. 2C schematically shows a subset of the electrode groups T (i.e. electrode groups T1, T2, T3, and T4) oflight modulator 100 driven by their corresponding voltage sources VJ and VK to establish various electric potentials on each of the sets ofelectrodes FIG. 2C shows that electrode groups T1, T2, T3, and T4 are driven by corresponding voltage sources VJ and VK as follows: (VJ1: +V/2, VK1: −V/2), (VJ2: +V/2, VK2: −V/2), (VJ3: 0, VK1: 0), and (VJ4: +V/2, VK4: −V/2). The voltages combinations of “+V/2” and “−V/2” correspond to drive voltages that are applied to an electrode group T to cause substantial diffraction within apixel region 110 associated with the electrode group T. In this regard, a difference of V Volts between these two potentials is sufficient to cause the diffraction. The voltage combinations of “0” and “0” correspond to drive voltages that are applied to an electrode group T to not cause substantial diffraction within apixel region 110 associated with the electrode group T. In this regard a difference of 0 Volts is insufficient to cause diffraction. - In this case, TIR modulator 100 is driven such that the averages of the voltage combinations used to create each of the different birefringent states in a
pixel region 110 are substantially equal to one another. That is, the average voltages used to create a substantially non-diffracting state in a pixel region 110 (i.e. the average of 0 Volts and 0 Volts) substantially equals an average of the voltages used to create a substantially diffracting state in a pixel region 110 (i.e. the average of +V/2 Volts and −V/2 Volts).FIG. 2C schematically shows the average electric potentials imposed on theelectrodes aforementioned TIR modulator 10 in which a variance of V/2 Volts existed between the average electrical potentials of the non-diffracting and diffractingpixel regions 11 ofTIR modulator 10, such variances are reduced in theTIR modulator 100.TIR modulator 100 is an example of a “balanced” TIR modulator. - It has been noted by the present inventors that other electrically conductive members (i.e. other than the interdigitated electrodes) can also generate electric field within an elector-optic material of a light modulator. In case of the
TIR modulator 100, the present inventors have noted that a set of electrical conductors (e.g. the set ofelectrical conductors 128A or the set ofelectrical conductors 128B) can lead to the creation of an electric field. It has been noted that the electric field created by set ofelectrical conductors optic material 113 than an electric field created by the electrodes in an electrode group T. This effect is simulated inFIG. 2B where anelectric field 136 is generated by variouselectrical conductors 128A and anelectric field 138 is generated by variouselectrical conductors 128B. Each of the generatedelectric fields member 112 in the vicinity ofnon-pixel regions electric fields non-pixel regions surface 118 that are not directly impinged byradiation 125,electric fields optic material 113 to interact withradiation 125.Electric fields radiation 125 that is outputted fromTIR modulator 100. - There is a need for improved TIR modulators that can further reduce beam steering effects.
- There is a need for improved balanced and unbalanced TIR modulators that can further reduce beam steering effects.
- Briefly, according to one aspect of the present invention a total internal reflection (TIR) modulator includes a member comprising an electro-optic material; a plurality of first electrode sets; a plurality of second electrode sets; and a first set of electrical conductors, each electrical conductor in the first set of electrical conductors being coupled to one of the second electrode sets wherein the electrodes in each second electrode set are arranged in an interdigitated relationship with the electrodes in one of the first electrode sets; and each of the first electrode sets comprises a first electrode, the first electrodes being arranged in an interdigitated relationship with the electrical conductors in the first set of electrical conductors.
- The invention and its objects and advantages will become more apparent in the detailed description of the preferred embodiment presented below.
- Embodiments and applications of the invention are illustrated by the attached non-limiting drawings. The attached drawings are for purposes of illustrating the concepts of the invention and may not be to scale.
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FIG. 1A is a schematic plan view of a conventional TIR modulator; -
FIG. 1B is a schematic side view of the conventional TIR modulator ofFIG. 1A ; -
FIG. 1C schematically shows a subset of electrode groups of the conventional TIR modulator ofFIG. 1A driven by various voltage levels; -
FIG. 2A is a schematic plan view of a balanced TIR modulator; -
FIG. 2B is a schematic side view of the TIR modulator ofFIG. 2A ; -
FIG. 2C schematically shows a subset of electrode groups of the modulator ofFIG. 2A driven by various voltage levels; -
FIG. 3 schematically shows an imaging apparatus as per an example embodiment of the invention; -
FIG. 4A is a schematic plan view of a light modulator employed in an example embodiment of the invention; -
FIG. 4B is a schematic side view of the light modulator ofFIG. 4A ; -
FIG. 4C schematically shows a subset of electrode groups and electrical conductors of the light modulator ofFIG. 4A driven by various voltage levels; -
FIG. 4D is a schematic detailed view of a portion of the light modulator ofFIG. 4A ; -
FIG. 5A is a schematic plan view of another light modulator employed in an example embodiment of the invention; and -
FIG. 5B is a schematic side view of the light modulator ofFIG. 5A . - The invention has been described in detail with particular reference to certain preferred embodiments thereof, but it will be understood that variations and modifications can be effected within the spirit and scope of the invention.
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FIG. 3 schematically shows animaging apparatus 200 employed by an example embodiment of the invention.Imaging apparatus 200 includes anillumination source 202 which can include a laser for example. Suitable lasers can include laser diode arrays which are relatively easy to modulate, have relatively low cost and have relatively small size. The choice ofillumination source 202 can be motivated by the properties ofrecording media 230 that is to be imaged byimaging apparatus 200. - One or more
optical elements 210 are positioned along the path ofradiation 225 emitted byillumination source 202 towardslight modulator 300.Radiation 225 is directed along a direction oftravel 226 towardslight modulator 300.Optical elements 210 can include one or more lenses employed tocondition radiation 225 in various ways. For example, when diode laser arrays are employed, various degrees of beam divergence can exist along a plurality of directions. Beam divergence can include fast axis divergence and slow axis divergence for example.Optical elements 210 can include various lenses adapted to correct these divergences such as micro-lenses or crossed cylindrical lenses.Optical elements 210 can include various elements adapted to mix or reflect various radiation beams such as light pipes and fly's eye integrators for example.Optical elements 210 can include various lenses adapted to focus or redirectradiation 225 emitted byillumination source 202. -
Radiation 225 that is directed ontolight modulator 300 is modulated in accordance withcontroller 260 which selectively controls various pixel regions 310 (not shown inFIG. 3 ) oflight modulator 300 to form various radiation beams.Image data 220 is employed bycontroller 260 to generate various radiation beams which are directed along a path towards an imageable surface of arecording media 230 to formvarious image pixels 240 thereon as required byimage data 220. Other radiations beams not required by the formation ofvarious image pixels 240 are directed elsewhere. In this illustrated embodiment, the radiation beams required to formimage pixels 240 pass through anaperture 250 while radiation beams not required to formimage pixels 240 are obstructed byaperture 250. One or more lenses (not shown) may be employed to direct radiation beams fromlight modulator 300 towardsaperture 250. One or moreoptical elements 270 are employed to direct various radiation beams onto the imageable surface ofrecording media 230. Various other embodiments of the invention need not employaperture 250, and radiation beams not required by the formation ofvarious image pixels 240 may fall by design outside the entrance pupil of a lens ofoptical elements 270. - Radiation beams can be used to form
image pixels 240 onrecording media 230 by different methods. For example, radiation beams can be used to ablate a surface ofrecording media 230. Radiation beams can be used to cause transference of an image-forming material from a donor element to a surface of recording media 230 (e.g. a thermal transfer process). Recordingmedia 230 can include an image modifiable surface, wherein a property or characteristic of the modifiable surface is changed when irradiated by a radiation beam. - Interactions between the radiation beams and the
recording media 230 can vary during the formation ofcorresponding image pixels 240. For example, various arrangements ofimage pixels 240 can be formed from plurality of imagings referred to as “shots.” During each shot,imaging apparatus 200 is positioned relative to a region ofrecording media 230. Once positioned,light modulator 300 is activated to form a first group ofimage pixels 240 on the region ofrecording media 230. Once theseimage pixels 240 are formed, relative movement betweenimaging apparatus 200 andrecording media 230 is effected to positionapparatus 200 in the vicinity of an adjacent region and another shot is taken to form a next group ofimage pixels 240 on the adjacent region.Various image pixels 240 can also be formed by scanning. Scanning can include establishing relative movement betweenlight modulator 300 andrecording media 230 as thelight modulator 300 is activated to form the desiredimage pixels 240. Relative movement can include moving one or both oflight modulator 300 andrecording media 230. In some example embodiments of the invention, scanning can be performed by deflecting radiation beams emitted bylight modulator 300 relative torecording media 230 to form theimage pixels 240. -
FIGS. 4A and 4B schematically show corresponding plan and side views of one exemplary embodiment oflight modulator 300. In this example embodiment of the invention,light modulator 300 is a TIR modulator.Light modulator 300 includes amember 312 comprising an electro-optic material 313. Electro-optic material 313 can include lithium niobate (LiNbO3) or lithium tantalate (LiTaO3) for example. Electro-optic material 313 can include a suitably chosen material which exhibits birefringent characteristics in response to the application of a suitable electric field. A plurality ofelectrodes surface 318 ofmember 312.Member 312 includessurfaces radiation 225 to refract and undergo total internal reflection atsurface 318. Other example embodiments of the invention can employ other orientations between various ones ofsurfaces radiation 225 to cause the total internal reflection. - As shown in
FIG. 4A , each of theelectrodes travel 226 ofradiation 225.Electrodes member 312 by various techniques known in the art. In some example embodiments, electrically conductive elements are formed by sputtering metal (e.g. gold) onsurface 318. Other metal deposition methods can include evaporation. Coatedsurface 318 is then coated with a suitable photo-resist which is patterned by exposure to light (e.g. ultraviolet light) through a suitable mask. A development of the photo-resist removes the photo-resist locally according to the pattern, and the electrically conductive elements are formed by chemically etching away metal that is not protected by the photo-resist. Other embodiments of the invention may employ a lift-off technique in which a photo-resist is first applied to surface 318 and is patterned. Metal is then sputtered onto bothsurface 318 and the patterned photo-resist. The photo-resist is then dissolved so that the metal deposited on the photo-resist is removed while leaving other metal attached to surface 318 in areas where the photo-resist was absent during sputtering. In this illustrated embodiment of the invention,electrodes - In this illustrated embodiment,
electrodes 315 are arranged to form a plurality of first electrode sets X1, X2, X3, X4 . . . Xn (i.e. collectively referred to as first electrode sets X) whileelectrodes 316 are arranged to form, a plurality of second electrode sets Y1, Y2, Y3, Y4 . . . Yn (i.e. collectively referred to as second electrode sets Y). In this example embodiment, each of the first and second electrode sets X and Y include four (4)respective electrodes electrodes 315 within a given first electrode set X are electrically driven by a corresponding one of individually controllable first voltage sources: VX1, VX2, VX3, VX4 . . . VXn (i.e. collectively referred to as first voltage sources VX) via one of a plurality ofelectrical conductors 328A provided onsurface 318. Theelectrodes 316 within a given second electrode set Y are electrically driven by a corresponding one of individually controllable second voltage sources: VY1, VY2, VY3, VY4 . . . VYn (i.e. collectively referred to as second voltage sources VY) via one of a plurality of electrical conductors 3288 provided onsurface 318. - In this example embodiment, each of the voltage sources VX is coupled to an
interconnect element 330A provided onsurface 318. In this example embodiment, each of the voltage sources VY is coupled to aninterconnect element 330B provided onsurface 318.Interconnect elements member 312, the interconnect elements being adapted for receiving an electrical signals from a voltage source. Each ofinterconnects elements - In this example embodiment, each of the
electrical conductors 328A acts as an electrical feed line between one of theinterconnect elements 330A and one first electrode sets X. In this example embodiment, each of theelectrical conductors 328B acts as an electrical feed line between one of theinterconnect elements 330B and one of the second electrode sets Y. In some example embodiments, each ofelectrical conductors light modulator 300 inFIG. 4D , each ofelectrical conductors light modulator 300 shown inFIG. 4D includes first electrode set X1 and second electrode set Y1. In this example embodiment each of theelectrodes 315 in a given one of the first electrode sets X is coupled to one of theelectrical conductors 328A at ajunction point 335A. In this example embodiment each of theelectrodes 316 in a given one of the first electrode sets Y is coupled to one of theelectrical conductors 328B at ajunction point 335B.FIGS. 4A , 4B, and 4D show that the variouselectrical conductors 328A extends over anon-pixel region 332A and that the variouselectrical conductors 328B extends over anon-pixel region 332B.Non-pixel regions FIG. 4D . The schematic representation ofnon-pixel regions non-pixel regions FIG. 4B , none ofnon-pixel regions surface 318 that is impinged byradiation 225. - In this example embodiment, first and second electrode sets X and Y are arranged such that each
electrode 315 is adjacently positioned next to anelectrode 316. In this example embodiment of the invention, each of the first electrodes sets X are arranged with another of the electrode sets Y such that their respective electrodes are interdigitated with respect to one another. In this example embodiment, each of the interdigitated electrode sets X and Y belongs to an electrode group U (i.e. one of electrode groups U1, U2, U3, U4 . . . Un). -
Light modulator 300 includes a plurality ofpixel regions 310, eachpixel region 310 including a portion of electro-optic material 313 and one of the electrode groups U. Eachpixel region 310 includes a portion ofsurface 318 that is directly impinged upon byradiation 225. Eachpixel region 310 includes a portion ofsurface 318 against whichradiation 225 undergoes total internal reflection. In this example embodiment, eachpixel region 310 is located between anon-pixel region 332A and anon-pixel region 332B. Apixel region 310 is schematically represented in broken lines inFIG. 4D . The schematic representation ofpixel region 310 depicted is for illustration purposes only and may not reflect an actual shape or size of the region. Other sizes and shapes ofpixel regions 310 can exist in other example embodiments of the invention. - An electric field can be established in the electro-
optic material 313 corresponding to a givenpixel region 310 by appropriately driving one or both of the voltage sources VX and VY corresponding to the givenpixel region 310. In this illustrated embodiment, both voltage sources VX and VY corresponding to givenpixel region 310 are driven to impart various birefringent states on the portion of the electro-optic material associated with the givenpixel region 310. Each of thepixel regions 310 is individually addressable by controlling a corresponding group of voltage sources VX and VY. In this regard, various groups of voltage sources VX and VY can be operated independently of other groups of voltage sources VX and VY. In various example embodiments, each of thepixel regions 310 can be addressed in a manner similar to that taught by U.S. Pat. No. 7,656,571 which is herein incorporated by reference. - Each of the groups of voltage sources VX and VY is selectively operated by controller 260 (not shown in
FIGS. 4A-4D ) to activate acorresponding pixel region 310 between various states.Controller 260, which can include one or more controllers, is used to control one or more systems ofimaging apparatus 200 including, but not limited to,light modulator 300. In this example embodiment,controller 260 is programmed to addresslight modulator 300 in accordance withimage data 220 which includes information representing an image to be formed. Various systems can be controlled using various control signals and by implementing various methods.Controller 260 can be configured to execute suitable software and can include one or more data processors, together with suitable hardware, including by way of non-limiting example: accessible memory, logic circuitry, drivers, amplifiers, A/D and D/A converters, input/output ports and the like.Controller 260 can comprise, without limitation, a microprocessor, a computer-on-a-chip, the CPU of a computer or any other suitable microcontroller. -
FIG. 4C schematically shows a subset of the electrode groups U (i.e. electrode groups U1, U2, U3, and U4) oflight modulator 300. Each electrode group U is driven by associated voltage sources VX and VY to apply various voltages to each of the first and second electrode sets X and Y of the electrode group U. In particular, first voltage sources VX1, VX2, and VX4 are driven to apply a first voltage VA to each of their corresponding first electrode sets X1, X2, and X4 to impose an electric potential PA thereon. Second voltage sources VY1, VY2, and VY4 are driven to apply a second voltage VB to each of their corresponding second electrode sets Y1, Y2, and Y4 to impose an electric potential PB thereon. First and second voltage sources VX3 and VY3 are driven to apply a third voltage VC to each of their corresponding first and second electrode sets X3 and Y3 to impose an electric potential PC thereon. It is understood that only the subset of electrode groups U1, U2, U3, and U4 is depicted for clarity and other electrode groups U oflight modulator 300 can be activated in a similar fashion. - In various example embodiments of the invention, combinations of electric potentials PA, PB, and PC are selectively imposed on the first and second electrode sets X and Y of each of the electrode groups U in accordance with a desired activation state of a
pixel region 310 associated with each of the electrode groups U. In various example embodiments, combinations of electric potentials PA, PB, and PC are selectively applied to various portions of apixel region 310 in accordance with a desired activation state that is to be associated with thepixel region 310. Activation states can include for example: an ON state in which apixel region 310 is activated to form animage pixel 240 onrecordable media 230 and an OFF state in which apixel region 310 is activated to not form acorresponding image pixel 240 onrecordable media 230. In various example embodiments of the invention, various ones of electric potentials PA, PB, and PC are selectively applied to the first and second electrode sets X and Y of each of the electrode groups U to impart a desired birefringent state on a portion of the electro-optic material 313 in an associatedpixel region 310. In this example embodiment, electric potentials PA, PB, and PC are each different from one another. - In this example embodiment of the invention, it desired that each
pixel region 310 corresponding to electrode groups U1, U2, and U4 be activated in accordance with an OFF state while thepixel region 310 corresponding to electrode group U3 be activated in accordance with an ON state. In this example embodiment, the electric potentials applied to each of the first electrode sets X correspond to values selected from a first group including a plurality of predetermined electric potential values including values corresponding to each of electric potentials PA and PC. The electric potentials applied to each of the second electrode sets Y correspond to values selected from a second group including a plurality of predetermined electric potential values including values corresponding to each of electric potentials PB and PC. In this example embodiment, electric potentials values corresponding to each of electric potentials PA and PB are different from one another. In this example embodiment, the electric potential values corresponding to the electric potential PC is different from the electric potential values corresponding to each of the electric potentials PA and PB. In this example embodiment, the first group of electric potential values includes at least one electric potential value that is not common with any of the electric potential values in the second group of electric potential values. In this example embodiment, the second group of electric potential values includes at least one electric potential value that is not common with any of the electric potential values in the first group of electric potential values. In this example embodiment, the first group of electric potential values and the second group of electric potential values together comprise three different electric potential values. The electric potential values can be the same or different from the electric potentials that are imposed as a result of their selection. In some cases, various losses can cause differences. - In various example embodiments, electric potential information is maintained. The electric potential information can specify a first combination of electric potentials to impose on an associated first and second set of the electrodes X and Y in the event that a first activation state is desired. The electric potential information can specify a second combination of electric potentials to impose on the first and second sets of the electrodes X and Y in the event that a second activation state different from the first activation state is desired. In some of these embodiments, the first combination of electric potentials comprises a plurality of electric potentials that are not common with any of the electric potentials of the second combination of electric potentials. A desired activation state is determined and an electric potential is imposed on each of the first and second sets of the electrodes X and Y according to the electric potential information corresponding to the determined desired activation state.
- The selection of an electric potential value from each of the predetermined first and second groups of electric potential values can be based at least on
image data 220. In this illustrated embodiment, controller 260 (not shown inFIGS. 4A-4D ) has selected a combination of electric potential values corresponding to common electric potentials PC according to a first image data signal (i.e. an ON image data signal) and a combination of different electric potential values corresponding to electric potentials PA and PB according to a different second image data signal (i.e. an OFF image data signal). - In this example embodiment, an electric potential difference between the combination of electric potentials PC applied to electrode group U3 is substantially null and a first birefringent state corresponding to this electric potential difference is imposed on the associated
pixel region 310. This first birefringent state can be selected to not cause substantial diffraction in the radiation emitted from the associatedpixel region 310. In this example embodiment, an electric potential difference between the combination of electric potentials PA and PB applied to each of the electrode groups U1, U2, and U4 is sufficient to impose a second birefringent state on each of their associatedpixel regions 310. This second birefringent state can be selected to cause substantial diffraction in the radiation emitted from each of the associatedpixel regions 310. - In various example embodiments of the invention, each of the electric potentials PA, PB, and PC is selected such that an average of the electric potentials applied to a
first pixel region 310 to impart a first birefringent state onto thefirst pixel region 310 is substantially equal to an average of the electric potentials applied to asecond pixel region 310 to impart a second birefringent state onto thesecond pixel region 310. In this example embodiment, the values of PA, PB, and PC are selected such that the sum of electric potentials PC and PC is substantially equal to the sum of electric potentials PA and PB. For example, in this illustrated embodiment, first and second voltage sources VX3 and VY3 are driven to apply a voltage VC to impose an electric potential PC of approximately 0 - Volts (i.e. a ground potential) on each of their corresponding first and second electrode sets X3 and Y3. Each of first voltage drives VX1, VX2, and VX4 are driven to apply a first voltage VA to each of their corresponding first electrode sets X1, X2, and X4 to impose an electric potential PA of +V/2 Volts thereon. Each of second voltage drives VY1, VY2, and VY4 are driven to apply a second voltage VB to each of their corresponding second electrode sets Y1, Y2, and Y4 to impose an electric potential PB of −V/2 Volts thereon. In this example embodiment of the invention, voltages VA and VB impose corresponding electric potentials PA and PB that are different from one another. Specifically, electric potentials PA and PB are each substantially equal in magnitude, but comprise different polarities.
- Accordingly, an electric potential difference sufficient to establish the first desired birefringent state (i.e. 0 Volts in this example) exists in electrode group U3 while an electric potential difference sufficient to establish the second birefringent state (i.e. V Volts in this example) exists in each of electrode groups U1, U2, and U4. In this example embodiment,
light modulator 300 is driven such that the sums of the electric potentials combinations used to create each of the different birefringent states are substantially equal to one another. That is, a first sum of electrical potentials PC and PC (i.e. the sum of 0 Volts and 0 Volts) substantially equals a second sum of electrical potentials PA and PB (i.e. the sum of +V/2 Volts and −V/2 Volts). In this regard,light modulator 300 is driven in a balanced manner. - In other example embodiments of the invention,
light modulator 300 can be driven using different techniques. For example, a common electric potential PC imposed on each of the first and second electrode sets X and Y of a particular electrode group U need not be selected to be a null or a ground potential. A first voltage source VX and its corresponding second voltage source VY can be driven to apply voltages VC to impose non-zero electric potentials of PC Volts on each of the corresponding first and second electrode sets X and Y in accordance with a first desired birefringent state. When a change from the first birefringent state to a second birefringent state is desired (i.e. for example when change in an image data signal is encountered), the first voltage source VX can be driven to adjust voltage VC applied to the first electrode set X by a first amount (e.g. V/2 Volts) to create an adjusted voltage equal to VC+V/2, and the second voltage source VY can be driven to adjust the voltage applied to the second electrode set Y by a second amount (e.g. V/2 Volts) to create an adjusted voltage equal to VC−V/2. The applied voltages are selected such that the sum of the voltages applied to the first and second electrode sets X and Y during the establishment of the first birefringent state (i.e. the sum of VC and VC) substantially equals the sum of the adjusted voltages applied to the first and second electrode sets X and Y during the establishment of the second birefringent state (i.e. the sum of VC+V/2 and VC−V/2). Each of the initially applied voltages are selected to create an electric potential difference suitable for the establishment of the first birefringent state and each of the adjusted applied voltages are selected to create an electric potential difference suitable for the establishment of the second birefringent state. In some example embodiments, each of the applied voltages is selected to cause each of the electric potentials applied to each of the first and second electrode sets X and Y during the establishment of either birefringent state to be uni-polar in nature. A uni-polar drive can be employed to simplify drive requirements. - Referring back to
FIG. 4C , it is noted that voltages VA having the same polarity (i.e. +V/2 Volts) are provided by various ones of theelectrical conductors 328A which extend overnon-pixel regions 332A. In a similar manner, voltages VB having the same polarity (i.e. −V/2 Volts) are provided by various ones of theelectrical conductors 328B which extend overnon-pixel regions 332B. The present inventors have determined that adjacent electrical conductors 328 carrying various voltage signals can cause an undesired electric field to arise in thenon-pixel regions electrical conductors optic material 313 associated with eachnon-pixel region electrical conductors FIG. 4A , the spacing between adjacentelectrical conductors 328A or adjacentelectrical conductors 328B is larger than the spacing between the various adjacent electrodes in each of the electrode groups U. In this example embodiment, the spacing between adjacentelectrical conductors 328A or adjacentelectrical conductors 328B is relatively large in part because each of the electrode groups U includes a relatively large number of interleavedelectrodes electrodes 315 and 316 (e.g. two (2)electrodes 315 interleaved with two (2) electrodes 316) relatively large spacings between adjacent electrical conductors 328 can be required as these conductors “fan-out” oversurface 318 to provide for the space requirements of elements such asinterconnect elements electrical conductors electrical conductors surface 318. Increased penetration depths of the electric fields generated in thenon-pixel regions radiation 225 which can cause various problems such as beam steering. It is noted that these undesired electric fields are typically image data dependant. - In various example embodiments of the invention, a second electrical potential is imposed on a
non-pixel region electrical conductor non-pixel region pixel region 310 that is fed by theelectrical conductor non-pixel region pixel region 310 that is fed by theelectrical conductor non-pixel region pixel region 310 that is fed by anotherelectrical conductor - In this example embodiment, each of first electrode sets X includes a
first electrode 315A. Each of the electrodes includes a portion positioned adjacently to anelectrical conductor 328B. Thefirst electrodes 315A are arranged in an interdigitated relationship with theelectrical conductors 328B that are coupled to the second electrical sets Y. In this example embodiment,electrical conductors 328B are herein referred to as firstelectrical conductors 328B andelectrical conductors 328A are herein referred to as secondelectrical conductors 328A. In this example embodiment, the firstelectrical conductors 328B form part of a first set ofelectrical conductors 328B. In this example embodiment, eachelectrode 315A includes a length that is longer than a corresponding length of any of theother electrodes 315 in an associated one of the first electrode sets X. In this example embodiment, each of thefirst electrodes 315A extends along a path that is substantially parallel to a path followed by one of the firstelectrical conductors 328B. As best shown inFIG. 4D , each of thefirst electrodes 315A includes afirst portion 336A that is positioned abreast of anelectrode 316 in an associated second electrode set Y, and asecond portion 336B that is positioned abreast of a firstelectrical conductor 328B that is coupled to the associated second electrode set Y. As herein employed in this specification, the term “abreast” as applied to two elements means that the two elements are positioned side by side with respect to one another and each of the two elements have a similar orientation. - In this example embodiment, the
first portion 336A of eachfirst electrode 315A is positioned substantially parallel to anelectrode 316 in the second electrode set. In this example embodiment, eachsecond portion 336B is positioned substantially parallel to the firstelectrical conductor 328B that is coupled to the associated second electrode set Y. In this example embodiment, thefirst portion 336A of eachfirst electrode 315A extends along a first path and thesecond portion 336B of thefirst electrode 315A extends along a second path, at least a part of the second path extending along a direction (i.e. represented byarrow 338A) that is different than a direction (i.e. represented byarrow 338B) that the first path extends along. In this example embodiment, eachelectrode 315 other thanfirst electrode 315A in each first electrode set X is positioned between twoelectrodes 316 in an associated one of the second electrode sets Y. In this example embodiment of the invention, each of thefirst electrodes 315A extends from ajunction point 335A to atermination point 340A, eachtermination point 340A being positioned proximate to aninterconnect element 330B that is coupled to the electrode group U associated with thefirst electrode 315A. Eachtermination point 340A does not contact aninterconnect element 330B that is coupled to the electrode group U associated with thefirst electrode 315A. In other example embodiments,termination point 340A is positioned beyond a location onsurface 318 where an electric field associated with firstelectrical conductor 328B would interact withradiation 225 inmember 312. In this example embodiment, at least one of thefirst electrodes 315A is positioned between two adjacently positioned firstelectrical conductors 328B. - In this example embodiment, each of the
first electrodes 315A is adapted for communicating a voltage signal that is applied to the first set of electrodes X to thenon-pixel region 332B over which thefirst electrode 315A extends. In this example embodiment, the voltage signal applied by eachnon-pixel region 332B imparts a second electric potential on thenon-pixel region 332B. In this example embodiment,non-pixel region 332B is herein referred to as firstnon-pixel region 332B andnon-pixel region 332A is herein referred to secondnon-pixel region 332A. The voltage signals applied to each electrode set of an interdigited first and second electrode sets X and Y can vary in accordance with a particular activation state that is to be imparted on an associatedpixel region 310. Accordingly, in this example embodiment, the electric potentials imposed by a firstelectrical conductor 328B and afirst electrode 315A that extend over a given one of firstnon-pixel regions 332B can vary in accordance with a particular activation state that is to be imparted on an associatedpixel region 310. In some example embodiments, the firstelectrical conductor 328B and thefirst electrode 315A that extend over a given one of the firstnon-pixel regions 332B impose different electric potentials on the firstnon-pixel region 332B. In some example embodiments, the different electric potentials imposed on a firstnon-pixel region 332B include different polarities. In some example embodiments, the different electrical potentials imposed on a firstnon-pixel region 332B include substantially the same magnitude.FIG. 4D shows different potentials applied in accordance with the voltage signals VA and VB applied to electrode group U1 inFIG. 4C . - In this example embodiment, an average of the electric potentials imposed by an associated first
electrical conductor 328B/first electrode 315A pair on a first one of the firstnon-pixel regions 332B is substantially equal to an average of the electric potentials imposed by an associated firstelectrical conductor 328B/first electrode 315A pair on another of the firstnon-pixel regions 332B. In this example embodiment, the substantial equality of the average electric potentials imposed on the firstnon-pixel regions 332B remains substantially constant regardless of how the activation state of thepixel regions 310 change in accordance withimage data 220 requirements. As previously noted, activation state changes can be accommodated by varying the first and second electric potentials imposed on apixel region 310. In this example embodiment, an activation state change can be made to a givenpixel region 310 by varying each of a first electric potential and a second electric potential imposed on it by an electrode group U by substantially the same amount with a consequence that the electrical potentials imposed on an associated firstnon-pixel region 332B are also varied by substantially the same amount. The imposition of the pair of electric potentials on each firstnon-pixel region 332B by an associated firstelectrical conductor 328B/first electrode 315A pair can be employed for various reasons including reducing the presence of long range electric fields in these regions. - As shown in the side view of
FIG. 4B , the introduction of the second voltage signal byfirst electrode 315A to a firstnon-pixel region 332B results in a the generation of anelectric field 342. In this example embodiment, the penetration depth of theelectric field 342 has been limited to reduce interactions withradiation 225 thereby reducing the presence of problems such as beam steering. In this example embodiment, a spacing between each member of an associated firstelectrical conductor 328B/first electrode 315A pair is selected to limit the penetration depth of theelectric field 342. The required spacing between each member of an associated firstelectrical conductor 328B/first electrode 315A pair can be determined by various techniques including direct experimentation and simulation techniques. In some example embodiments, the spacing between each member of an associated firstelectrical conductor 328B/first electrode 315A pair can be related to a spacing betweenadjacent electrodes electrical conductor 328B/first electrode 315A pair can also be motivated by other factors including manufacturing limitations or manufacturing yield requirements. - In this example embodiment, each of the second electrode sets Y includes a
second electrode 316A that is arranged in a similar manner tofirst electrodes 315A. In this regard, thesecond electrodes 316A are arranged in an interdigitated relationship with the secondelectrical conductors 328A. Eachsecond electrode 316A extends from ajunction point 335B to atermination point 340B. Each of thesecond electrodes 316A is employed to provide a voltage signal to impose a first electric potential on a secondnon-pixel region 332A in a similar manner as that employed with firstnon-pixel regions 332B. As shown inFIG. 4B , the application of this additional electric potential to each secondnon-pixel region 332A results in the generation of anelectric field 344 whose penetration depth with electro-optic material 313 has been limited to reduce interactions withradiation 225. - The
light modulator 300 described in association withFIGS. 4A , 4B, 4C, and 4D is a balanced light modulator. Other example embodiments of the present invention can also be employed with unbalanced modulators.FIGS. 5A and 5B schematically show plan and side views of an unbalancedlight modulator 400.Light modulator 400 includes amember 412 which includes an electro-optic material 413 and a plurality ofelectrodes surface 418 ofmember 412.Surfaces input radiation 425 to refract and undergo total internal reflection atsurface 418. In this example embodiment,various electrodes light modulator 400. Each of theelectrodes 415 in each of the groups W are driven by a corresponding one of individually addressable voltages sources VA1, VA2, VA3, VA4 . . . VAn via one of a plurality ofelectrical conductors 428 extending over a non-pixel region oflight modulator 400. In this example embodiment, all of theelectrodes 416 are electrically coupled to a common source (e.g. a ground potential in a serpentine fashion). Each of the electrode groups W includes afirst electrode 416A. In this example embodiment, thefirst electrodes 416A are arranged in an interdigitated relationship with theelectrical conductors 428. Althoughlight modulator 400 still behaves in an unbalanced manner in this example embodiment, each of thefirst electrode 416A/electrical conductor 428 pairs effectively reduces an overall electric potential imposed on a non-pixel region oflight modulator 400 thereby reducing unwanted diffractive effects in the non-pixel region. In this example embodiment, the overall electrical potential is effectively equal to an average of the electric potentials associated with each member of aelectrode 416A/electrical conductor 428 pair is imposed on a non-pixel region. - The invention has been described in detail with particular reference to certain preferred embodiments thereof, but it will be understood that variations and modifications can be effected within the scope of the invention.
-
- 10 TIR modulator
- 11 pixel region
- 12 member
- 15 electrodes
- 16 electrodes
- 18 surface
- 20 surface
- 22 surface
- 25 input radiation
- 27 output radiation
- 100 TIR modulator
- 110 pixel region
- 112 member
- 113 electro-optic material
- 115 electrodes
- 116 electrodes
- 118 surface
- 120 surface
- 122
surface 125 radiation - 126 direction of travel
- 128A electrical conductor
- 128B electrical conductor
- 130A interconnect element
- 130B interconnect element
- 132A non-pixel region
- 132B non-pixel region
- 134 non-pixel region
- 136 electric field
- 138 electric field
- 200 imaging apparatus
- 202 illumination source
- 210 optical element(s)
- 220 image data
- 225 radiation
- 226 direction of travel
- 230 recording media
- 240 image pixel
- 250 aperture
- 260 controller
- 270 optical element(s)
- 300 light modulator
- 310 pixel region
- 312 member
- 313 electro-optic material
- 315 electrode
- 315A first electrode
- 316 electrode
- 316A second electrode
- 318 surface
- 320 surface
- 322 surface
- 328A electrical conductor/second electrical conductor
- 328B electrical conductor/first electrical conductor
- 330A interconnect element
- 330B interconnect element
- 332A non-pixel region/second non-pixel region
- 332B non-pixel region/first non-pixel region
- 335A junction point
- 335B junction point
- 336A first portion
- 336B second portion
- 338A arrow
- 338B arrow
- 340A termination point
- 340B termination point
- 342 electric field
- 344 electric field
- 400 light modulator
- 410 pixel region
- 412 member
- 413 electro-optic material
- 415 electrode
- 416 electrode
- 416A first electrode
- 418 surface
- 420 surface
- 422 surface
- 425 input radiation
- 428 electrical conductor
- PA electric potential
- PB electric potential
- PC electric potential
- S1 electrode group
- S2 electrode group
- S3 electrode group
- S4 electrode group
- Sn electrode group
- T1 electrode group
- T2 electrode group
- T3 electrode group
- T4 electrode group
- Tn electrode group
- U1 electrode group
- U2 electrode group
- U3 electrode group
- U4 electrode group
- Un electrode group
- W1 electrode group
- W2 electrode group
- W3 electrode group
- W4 electrode group
- Wn electrode group
- V1 voltage source
- V2 voltage source
- V3 voltage source
- V4 voltage source
- Vn voltage source
- VA1 voltage source
- VA2 voltage source
- VA3 voltage source
- VA4 voltage source
- VAn voltage source
- VA voltage
- VB voltage
- VC voltage
- VJ1 first voltage source
- VJ2 first voltage source
- VJ3 first voltage source
- VJ4 first voltage source
- VJn first voltage source
- VK1 second voltage source
- VK2 second voltage source
- VK3 second voltage source
- VK4 second voltage source
- VKn second voltage source
- VX1 first voltage source
- VX2 first voltage source
- VX3 first voltage source
- VX4 first voltage source
- VXn first voltage source
- VY1 second voltage source
- VY2 second voltage source
- VY3 second voltage source
- VY4 second voltage source
- VYn second voltage source
- X1 first electrode set
- X2 first electrode set
- X3 first electrode set
- X4 first electrode set
- Xn first electrode set
- Y1 second electrode set
- Y2 second electrode set
- Y3 second electrode set
- Y4 second electrode set
- Yn second electrode set
Claims (26)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US12/730,305 US8023170B1 (en) | 2010-03-24 | 2010-03-24 | Total internal reflection modulator |
PCT/US2011/027472 WO2011119320A1 (en) | 2010-03-24 | 2011-03-08 | Improved total internal reflection modulator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US12/730,305 US8023170B1 (en) | 2010-03-24 | 2010-03-24 | Total internal reflection modulator |
Publications (2)
Publication Number | Publication Date |
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US8023170B1 US8023170B1 (en) | 2011-09-20 |
US20110235149A1 true US20110235149A1 (en) | 2011-09-29 |
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US12/730,305 Active US8023170B1 (en) | 2010-03-24 | 2010-03-24 | Total internal reflection modulator |
Country Status (2)
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US (1) | US8023170B1 (en) |
WO (1) | WO2011119320A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US20150331297A1 (en) * | 2014-05-16 | 2015-11-19 | Samsung Electronics Co., Ltd. | Spatial light modulator including nano-antenna electrode and display apparatus including the spatial light modulator |
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US10761399B2 (en) | 2018-07-26 | 2020-09-01 | Eastman Kodak Company | Laser exposure head with reduced leakage |
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Also Published As
Publication number | Publication date |
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US8023170B1 (en) | 2011-09-20 |
WO2011119320A1 (en) | 2011-09-29 |
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