US20090289172A1 - Detection of seed layers on a semiconductor device - Google Patents
Detection of seed layers on a semiconductor device Download PDFInfo
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- US20090289172A1 US20090289172A1 US12/512,815 US51281509A US2009289172A1 US 20090289172 A1 US20090289172 A1 US 20090289172A1 US 51281509 A US51281509 A US 51281509A US 2009289172 A1 US2009289172 A1 US 2009289172A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Definitions
- Embodiments relate to a method and/or a device which detects a seed layer. Embodiments relate to a method and/or device which form layers on a semiconductor device.
- a device which detects a seed layer may use an inspection device, which may check whether the seed layer is formed on top of a wafer. Detection of a seed layer may occur prior to a plating process which forms an interconnection layer.
- a seed layer detecting device forms layers on a semiconductor device.
- Some semiconductor devices have a multi-interconnection structure including interconnections and insulating layers, which may be alternately stacked.
- Semiconductor devices having multi-interconnection structures may include an upper interconnection connected to a lower interconnection through a via hole formed between insulating layers.
- Semiconductor devices having multi-interconnection structures may have a relatively high degree of integration and/or may have a relatively simple circuit design.
- a semiconductor device having multi-interconnection structures may have reduced signal delay and/or improved operational speed.
- Semiconductor devices with micro-size line widths may have relatively high interconnection resistance.
- interconnections of semiconductor devices may be fabricated using a superior electric conductivity material.
- Copper (e.g. which has a lower electric resistance than aluminum (Al)) may be used as a material for interconnections in a semiconductor device. Copper has a lower electric resistance and specific electric resistance than aluminum. However, Copper has a higher thermal conductive coefficient than aluminum. Since copper has relatively high electro migration (EM) and superior stress migration (SM) compared to aluminum, copper may be suitable for semiconductor devices having shallow line widths.
- EM electro migration
- SM superior stress migration
- copper when copper is used in interconnections of semiconductor devices, copper may diffuse into an interlayer dielectric layer. Accordingly, copper interconnections may degrade electric characteristics and insulating characteristics of semiconductor devices.
- FIGS. 1 and 2 are sectional views illustrating formation of an interconnection layer in a semiconductor device.
- metal layer 2 e.g. which may serve as a barrier layer to prevent copper diffusion
- wafer 1 which may have a circuit section.
- Metal layer 2 may serve as a lower circuit interconnection.
- metal layer 2 examples include tungsten (W), tungsten alloys, titanium (Ti), titanium alloys, titanium nitride, tantalum (Ta), tantalum nitride, tantalum silicon nitrides, and other similar materials.
- Metal layer 2 may be deposited over wafer 1 by chemical vapor deposition (CVD), sputtering, or a similar process.
- a copper layer (e.g. which may be a source of the copper interconnection) may be formed by an electroplating process.
- seed layer 3 may be formed over the surface of metal layer 2 (e.g. using a sputtering process). Seed layer 3 may have a thickness of about 50 ⁇ .
- Pattern layer 4 may have an opening formed over the surface of seed layer 3 . Electroplating may be performed on seed layer 3 (e.g. through the exposed opening of pattern layer 4 ) to form copper interconnection layer 5 .
- pattern layer 4 may be removed after copper interconnection layer 5 has been formed.
- Seed layer 3 may serve as an electrode, resulting in a copper interconnection.
- Seed layer 3 may be formed over metal layer 2 before electroplating of seed layer 3 . However, if electroplating is performed when there are irregularities in seed layer 3 and/or if seed layer 3 is not present, an underlying wafer may be damaged.
- Embodiments relate to a device which detects a copper seed layer before an electroplating process on the copper seed layer. Embodiments relate to detecting a seed layer with a device. Embodiments relate to a device which forms layers on a semiconductor device using a seed layer detecting device. Embodiments relate to forming layers on a semiconductor device using a device.
- a device detects a seed layer formed on a wafer.
- the device may include at least one of an annular frame (e.g. installed over the wafer with a shape which corresponds to the edge of the wafer), a sensor frame (e.g. installed in the annular frame), and a detecting unit (e.g. installed in the sensor frame, which may detect the seed layer).
- a method detects a seed layer formed over a wafer.
- the method may include at least one of installing an annular frame (e.g. having a shape which corresponds to an edge of the wafer) above the wafer, moving a sensor frame (e.g. installed in the annular frame) into an inspection position for the wafer, detecting the seed layer (e.g. by using a detecting unit installed in the sensor frame), generating a detection signal (e.g. using the detecting unit), and determining if the seed layer formed over the wafer has defects (e.g. based on the detection signal).
- an annular frame e.g. having a shape which corresponds to an edge of the wafer
- moving a sensor frame e.g. installed in the annular frame
- detecting the seed layer e.g. by using a detecting unit installed in the sensor frame
- generating a detection signal e.g. using the detecting unit
- a device forms layers on a semiconductor device.
- the device may include at least one of a metal layer forming unit (e.g. which forms a metal layer on a wafer), a copper seed layer forming unit (e.g. which forms a copper seed layer on the metal layer), a wafer alignment device (e.g. including a wafer alignment unit which aligns the wafer in a predetermined position), a copper seed layer detecting unit (e.g. positioned above the wafer alignment unit to detect the copper seed layer formed on the wafer), and a plating unit (e.g. which forms a copper interconnection layer on the copper seed layer).
- a metal layer forming unit e.g. which forms a metal layer on a wafer
- a copper seed layer forming unit e.g. which forms a copper seed layer on the metal layer
- a wafer alignment device e.g. including a wafer alignment unit which aligns the wafer in a predetermined position
- a copper seed layer detecting unit e
- a method forms layers on a semiconductor device.
- the method may include at least one of forming a copper seed layer on a wafer, aligning a flat zone of the wafer to a predetermined position, generating a detection signal (e.g. by detecting the copper seed layer formed on a top surface of the wafer), determining if the copper seed layer is formed on the wafer (e.g. based on the detection signal), and forming a copper interconnection layer on the copper seed layer (e.g. if the copper seed layer is formed on the wafer).
- a detection signal e.g. by detecting the copper seed layer formed on a top surface of the wafer
- determining if the copper seed layer is formed on the wafer e.g. based on the detection signal
- forming a copper interconnection layer on the copper seed layer e.g. if the copper seed layer is formed on the wafer.
- FIGS. 1 and 2 are sectional views illustrating the formation of an interconnection layer of a semiconductor device, in accordance with embodiments.
- Example FIG. 3 is a longitudinal sectional view illustrating the structure of an aligner of a device which forms layers on a semiconductor device, in accordance with embodiments.
- Example FIG. 4 is a plan view illustrating an aligner of a device which forms layers on a semiconductor device, in accordance with embodiments.
- FIGS. 5 a and 5 b are enlarged perspective views schematically illustrating an imaging device installed in an aligner, in accordance with embodiments.
- Embodiments relate to a device which forms layers on a semiconductor device.
- a device may include process modules, each of which may perform different functions.
- a device which forms layers on a semiconductor device may include at least one of a metal deposition chamber (e.g. which deposits a metal layer on a wafer), a seed layer deposition chamber (e.g. which deposits a seed layer on the metal layer), an aligner (e.g. which aligns the wafer), and a transfer chamber (e.g. having a robot arm for loading/unloading the wafer into/from each chamber).
- a metal deposition chamber e.g. which deposits a metal layer on a wafer
- a seed layer deposition chamber e.g. which deposits a seed layer on the metal layer
- an aligner e.g. which aligns the wafer
- a transfer chamber e.g. having a robot arm for loading/unloading the wafer into/from each chamber.
- a wafer may be placed in a metal deposition chamber.
- a reaction gas may be injected into the metal deposition chamber to deposit a metal layer over the top surface of the wafer.
- a metal layer may include titanium deposited over the top surface of a wafer (e.g. having a thickness of about 100 ⁇ ).
- a seed layer (e.g. having a thickness of about 200 ⁇ ) may be deposited in the seed layer deposition chamber using a sputtering process.
- the wafer may be transferred to a plating chamber (e.g. where copper may be plated onto the seed layer).
- aligner 10 may precisely align a flat zone and the center of a wafer to a predetermined position.
- Aligner 10 may include chamber 11 , wafer transfer arm 16 , base plate 12 , pins 15 , poles 13 , and/or seed layer detecting device 14 .
- Chamber 11 of aligner 10 may include a space which aligns wafer 10 to a predetermined position.
- Wafer transfer arm 16 may load/unload wafer 20 into/from chamber 11 .
- Base plate 12 may be located at the bottom of chamber 11 to support wafer 20 .
- Pins 15 may form a space between base plate 12 and wafer 20 .
- the upper portions of pins 15 may have hemispherical shapes.
- Poles 13 may be located on base plate 12 to align the position of wafer 20 . For example, poles 13 may align the flat zone of wafer 20 .
- Seed layer detecting device 14 may be located above wafer 20 to detect a seed layer formed over the top surface of wafer 20 .
- seed layer detecting device 14 may include a detecting unit which detects a seed layer on the wafer.
- a detection signal may be generated from a detecting unit (e.g. which may be controlled by a central processing unit).
- Seed layer detecting device 14 may be located above wafer 20 and may detect a seed layer formed on the top surface of wafer 20 .
- seed layer detecting device 14 may include coupling member 145 .
- Coupling member 145 may include a coupling slot 145 a, which may be coupled with base plate 12 of aligner 10 .
- Seed layer detecting device 14 may include support bar 141 connected to coupling member 145 .
- Seed layer detecting device 14 may include frame 142 connected to support bar 141 .
- Support bar 141 may be located at an inner portion of frame 142 at guide rail 142 a.
- Seed layer detecting device 14 may include sensor frame 143 , which may be coupled to guide rail 142 a.
- Imaging device 144 may be installed on sensor frame 143 .
- Base plate 12 of aligner 10 may be spaced apart from frame 142 by support bar 141 . Through the space created by support bar 141 , wafer transfer arm 16 can load or unload wafer 20 to be placed on base plate 12 without colliding with frame 142 .
- Coupling member 145 may have a hexahedral block shape. Coupling member 145 may be located at a lower end portion of support bar 141 . Coupling member 145 may be located at an inner portion of support bar 141 . Coupling slot 145 a may be coupled with a lateral side of base plate 12 . In embodiments, coupling member 145 may be coupled to support bar 141 by a screw (or similar fastener).
- guide rail 142 a is located at the inner portion of frame 142 .
- guide rail 142 a has a groove-shaped section.
- Sensor frame 143 may be attached to guide rail 142 a, may have a hexahedral plate shape, and may have an opening.
- locking protrusion 143 a may be located at the end of sensor frame 143 .
- Locking protrusion 143 a may be coupled to guide rail 142 a, such that sensor frame 143 can move along guide rail 142 a.
- Sensor frame 143 may include an opening in a central area having slot 143 b. Imaging device 144 may be inserted into slot 143 b. Imaging device 144 may move along slot 143 b of sensor frame 143 while crossing wafer 20 . Sensor frame 143 may move along guide rail 142 a of frame 142 and imaging device 144 may move along slot 143 b of sensor frame 143 while crossing the wafer 20 . In embodiments, a seed layer formed on the top surface of wafer 20 may be precisely detected by sensor frame 143 .
- imaging device 144 may vary depending on the required inspection precision for a wafer.
- a plurality of sensor frames e.g. sensor frame 143
- imaging device 144 may include a light emitting diode and a light receiving diode.
- imaging device 144 may include a light irradiation unit to photograph wafer 20 .
- Embodiments relate to a method of detecting a seed layer formed on the top surface of a wafer using a seed layer detecting device.
- a seed layer detecting device may be included in a device which forms layers on the semiconductor device.
- a metal layer is deposited on the top surface of a wafer through a metal layer deposition process.
- heat e.g. with a temperature higher than room temperature
- wafer 20 may be transferred into vacuum chamber 11 of aligner 10 by transfer arm 16 .
- Wafer 20 may be loaded on pins 15 (e.g. 3-4 pins) and aligned in a predetermined direction based on the center and align marks of wafer 20 .
- Imaging device 144 may detect a seed layer formed on the top surface of wafer 20 .
- Imaging device 144 (e.g. which may be located on sensor frame 143 ) may move in a circumferential direction of wafer 20 along guide rail 142 a of frame 142 . Imaging device may move along slot 143 b of sensor frame 143 while crossing wafer 20 . The position of imaging device 144 may be changed based on the size of wafer 20 .
- imaging device 144 may include a light emitting diode and a light receiving diode. Light irradiated onto the surface of wafer 20 from a light emitting diode may be reflected by a seed layer formed on wafer 20 , so that light is reflected back to imaging device 144 and into a light receiving diode. A central processing unit may determine if a seed layer is formed on the top surface of wafer 20 based on the light response received at a light receiving diode.
- light receiving diode When light reflected from wafer 20 is reflected into a light receiving diode, light receiving diode may generate a current having a predetermined intensity. Generated current may be input into a central processing unit.
- a central processing unit may store a signal (e.g. which may be amplified by a signal amplifier) and may compare the value of the signal with predetermined signal value to determining if a seed layer is formed on the top surface of wafer 20 .
- imaging device 144 may include a camera to inspect the surface of wafer 20 .
- Light may be irradiated onto the surface of wafer 20 from a light irradiation unit.
- a camera may have a resolution of a micrometer.
- a camera may include an objective lens group and/or a CCD (charge coupled device) which converts an optical image into an electric signal.
- a light irradiation unit may include a light source (e.g. a halogen lamp in embodiments) and a condenser lens which focuses light.
- a central processing unit may generate on/off signals by detecting a seed layer based on a signal input into light receiving diode. If it is determined that a seed layer formed on wafer 20 has a defect, wafer 20 may be transferred to an apparatus for forming a seed layer by a transfer arm.
- a seed layer may be detected by inspecting the surface of a wafer resting on an aligner using an imaging device included in the aligner. Accordingly, it may not be necessary to detect a seed layer outside of an aligner. In embodiments, a seed layer may be detected before a plating process.
- a wafer with a seed layer may then be transferred to a plating chamber for implantation of a plating process.
- a plating layer may be formed on the entire surface of a seed layer of wafer 20 .
- a plating layer may be selectively formed on wafer 20 by forming a photoresist pattern on wafer 20 .
- a metal deposition solution may be fed onto a charged seed layer so that a metal layer (e.g. a copper metal layer) can be deposited on the seed layer.
- a seed layer primarily formed on wafer 20 may include a copper interconnection layer formed on the surface of wafer 20 . Since a seed layer may easily react with copper particles, a copper interconnection layer having desirable characteristics may be achieved.
- a seed layer may be detected before a plating process (e.g. which forms an interconnection layer), which may improve reliability.
- Embodiments may prevent a wafer having no seed layer from being loaded into a plating apparatus, which may improve the yield rate of wafers and/or may prevent a semiconductor manufacturing device from being damaged or broken.
- the wafer is prevented from being transferred to subsequent processing stages, which may improve reliability and/or allow workers to more effectively manage processes.
- inspection time may be shortened for a more efficient semiconductor manufacturing process.
Abstract
A device and/or method which detects a seed layer and a device and/or method of forming layers on a semiconductor device. The device which forms layers on the semiconductor device may include a metal layer forming unit (which forms a metal layer on a wafer), a copper seed layer forming unit (which forms a copper seed layer on the metal layer), a wafer alignment device (which includes a wafer alignment unit which aligns the wafer to a predetermined position), a copper seed layer detecting unit (which is positioned above the wafer alignment unit to detect the copper seed layer formed on the wafer), and a plating unit (which forms a copper interconnection layer on the copper seed layer).
Description
- The present application claims priority under 35 U.S.C. 119 and 35 U.S.C. 365 to Korean Patent Application No. 10-2005-0095257 (filed on Oct. 11, 2005), which is hereby incorporated by reference in its entirety.
- 1. Field of the Embodiments
- Embodiments relate to a method and/or a device which detects a seed layer. Embodiments relate to a method and/or device which form layers on a semiconductor device. A device which detects a seed layer may use an inspection device, which may check whether the seed layer is formed on top of a wafer. Detection of a seed layer may occur prior to a plating process which forms an interconnection layer. In embodiments, a seed layer detecting device forms layers on a semiconductor device.
- 2. Description of Related Art
- In general, line widths of interconnections and the intervals between interconnections of semiconductor devices have gotten smaller through the development of semiconductor technology. Some semiconductor devices have a multi-interconnection structure including interconnections and insulating layers, which may be alternately stacked. Semiconductor devices having multi-interconnection structures may include an upper interconnection connected to a lower interconnection through a via hole formed between insulating layers.
- Semiconductor devices having multi-interconnection structures may have a relatively high degree of integration and/or may have a relatively simple circuit design. A semiconductor device having multi-interconnection structures may have reduced signal delay and/or improved operational speed. Semiconductor devices with micro-size line widths may have relatively high interconnection resistance. To reduce interconnection resistance, interconnections of semiconductor devices may be fabricated using a superior electric conductivity material.
- Copper (Cu) (e.g. which has a lower electric resistance than aluminum (Al)) may be used as a material for interconnections in a semiconductor device. Copper has a lower electric resistance and specific electric resistance than aluminum. However, Copper has a higher thermal conductive coefficient than aluminum. Since copper has relatively high electro migration (EM) and superior stress migration (SM) compared to aluminum, copper may be suitable for semiconductor devices having shallow line widths.
- However, when copper is used in interconnections of semiconductor devices, copper may diffuse into an interlayer dielectric layer. Accordingly, copper interconnections may degrade electric characteristics and insulating characteristics of semiconductor devices.
- Example
FIGS. 1 and 2 are sectional views illustrating formation of an interconnection layer in a semiconductor device. As illustrated inFIGS. 1 and 2 , metal layer 2 (e.g. which may serve as a barrier layer to prevent copper diffusion) may be formed over wafer 1, which may have a circuit section. Metal layer 2 may serve as a lower circuit interconnection. - Examples of materials that may be included in metal layer 2 include tungsten (W), tungsten alloys, titanium (Ti), titanium alloys, titanium nitride, tantalum (Ta), tantalum nitride, tantalum silicon nitrides, and other similar materials. Metal layer 2 may be deposited over wafer 1 by chemical vapor deposition (CVD), sputtering, or a similar process.
- A copper layer (e.g. which may be a source of the copper interconnection) may be formed by an electroplating process. To form copper interconnections using electroplating, seed layer 3 may be formed over the surface of metal layer 2 (e.g. using a sputtering process). Seed layer 3 may have a thickness of about 50 Å. Pattern layer 4 may have an opening formed over the surface of seed layer 3. Electroplating may be performed on seed layer 3 (e.g. through the exposed opening of pattern layer 4) to form copper interconnection layer 5.
- As illustrated in
FIG. 2 , pattern layer 4 may be removed after copper interconnection layer 5 has been formed. Seed layer 3 may serve as an electrode, resulting in a copper interconnection. Seed layer 3 may be formed over metal layer 2 before electroplating of seed layer 3. However, if electroplating is performed when there are irregularities in seed layer 3 and/or if seed layer 3 is not present, an underlying wafer may be damaged. - Embodiments relate to a device which detects a copper seed layer before an electroplating process on the copper seed layer. Embodiments relate to detecting a seed layer with a device. Embodiments relate to a device which forms layers on a semiconductor device using a seed layer detecting device. Embodiments relate to forming layers on a semiconductor device using a device.
- In embodiments, a device detects a seed layer formed on a wafer. The device may include at least one of an annular frame (e.g. installed over the wafer with a shape which corresponds to the edge of the wafer), a sensor frame (e.g. installed in the annular frame), and a detecting unit (e.g. installed in the sensor frame, which may detect the seed layer).
- In embodiments, a method detects a seed layer formed over a wafer. The method may include at least one of installing an annular frame (e.g. having a shape which corresponds to an edge of the wafer) above the wafer, moving a sensor frame (e.g. installed in the annular frame) into an inspection position for the wafer, detecting the seed layer (e.g. by using a detecting unit installed in the sensor frame), generating a detection signal (e.g. using the detecting unit), and determining if the seed layer formed over the wafer has defects (e.g. based on the detection signal).
- In embodiments, a device forms layers on a semiconductor device. The device may include at least one of a metal layer forming unit (e.g. which forms a metal layer on a wafer), a copper seed layer forming unit (e.g. which forms a copper seed layer on the metal layer), a wafer alignment device (e.g. including a wafer alignment unit which aligns the wafer in a predetermined position), a copper seed layer detecting unit (e.g. positioned above the wafer alignment unit to detect the copper seed layer formed on the wafer), and a plating unit (e.g. which forms a copper interconnection layer on the copper seed layer).
- In embodiments, a method forms layers on a semiconductor device. The method may include at least one of forming a copper seed layer on a wafer, aligning a flat zone of the wafer to a predetermined position, generating a detection signal (e.g. by detecting the copper seed layer formed on a top surface of the wafer), determining if the copper seed layer is formed on the wafer (e.g. based on the detection signal), and forming a copper interconnection layer on the copper seed layer (e.g. if the copper seed layer is formed on the wafer).
- Example
FIGS. 1 and 2 are sectional views illustrating the formation of an interconnection layer of a semiconductor device, in accordance with embodiments. - Example
FIG. 3 is a longitudinal sectional view illustrating the structure of an aligner of a device which forms layers on a semiconductor device, in accordance with embodiments. - Example
FIG. 4 is a plan view illustrating an aligner of a device which forms layers on a semiconductor device, in accordance with embodiments. - Example
FIGS. 5 a and 5 b are enlarged perspective views schematically illustrating an imaging device installed in an aligner, in accordance with embodiments. - Embodiments relate to a device which forms layers on a semiconductor device. A device may include process modules, each of which may perform different functions.
- In embodiments, a device which forms layers on a semiconductor device may include at least one of a metal deposition chamber (e.g. which deposits a metal layer on a wafer), a seed layer deposition chamber (e.g. which deposits a seed layer on the metal layer), an aligner (e.g. which aligns the wafer), and a transfer chamber (e.g. having a robot arm for loading/unloading the wafer into/from each chamber).
- A wafer may be placed in a metal deposition chamber. A reaction gas may be injected into the metal deposition chamber to deposit a metal layer over the top surface of the wafer. In embodiments, a metal layer may include titanium deposited over the top surface of a wafer (e.g. having a thickness of about 100 Å). A seed layer (e.g. having a thickness of about 200 Å) may be deposited in the seed layer deposition chamber using a sputtering process. In embodiments, after the metal layer and the seed layer have been sequentially formed on the wafer, the wafer may be transferred to a plating chamber (e.g. where copper may be plated onto the seed layer).
- As illustrated in
FIGS. 3 to 5 a,aligner 10 may precisely align a flat zone and the center of a wafer to a predetermined position.Aligner 10 may includechamber 11,wafer transfer arm 16,base plate 12, pins 15, poles 13, and/or seedlayer detecting device 14.Chamber 11 ofaligner 10 may include a space which alignswafer 10 to a predetermined position.Wafer transfer arm 16 may load/unloadwafer 20 into/fromchamber 11.Base plate 12 may be located at the bottom ofchamber 11 to supportwafer 20.Pins 15 may form a space betweenbase plate 12 andwafer 20. The upper portions ofpins 15 may have hemispherical shapes. Poles 13 may be located onbase plate 12 to align the position ofwafer 20. For example, poles 13 may align the flat zone ofwafer 20. - Seed
layer detecting device 14 may be located abovewafer 20 to detect a seed layer formed over the top surface ofwafer 20. For example, seedlayer detecting device 14 may include a detecting unit which detects a seed layer on the wafer. A detection signal may be generated from a detecting unit (e.g. which may be controlled by a central processing unit). Seedlayer detecting device 14 may be located abovewafer 20 and may detect a seed layer formed on the top surface ofwafer 20. - In embodiments, seed
layer detecting device 14 may include couplingmember 145. Couplingmember 145 may include acoupling slot 145 a, which may be coupled withbase plate 12 ofaligner 10. Seedlayer detecting device 14 may includesupport bar 141 connected tocoupling member 145. Seedlayer detecting device 14 may includeframe 142 connected to supportbar 141.Support bar 141 may be located at an inner portion offrame 142 atguide rail 142 a. Seedlayer detecting device 14 may includesensor frame 143, which may be coupled toguide rail 142 a.Imaging device 144 may be installed onsensor frame 143. -
Base plate 12 ofaligner 10 may be spaced apart fromframe 142 bysupport bar 141. Through the space created bysupport bar 141,wafer transfer arm 16 can load or unloadwafer 20 to be placed onbase plate 12 without colliding withframe 142. Couplingmember 145 may have a hexahedral block shape. Couplingmember 145 may be located at a lower end portion ofsupport bar 141. Couplingmember 145 may be located at an inner portion ofsupport bar 141.Coupling slot 145 a may be coupled with a lateral side ofbase plate 12. In embodiments,coupling member 145 may be coupled to supportbar 141 by a screw (or similar fastener). - As illustrated in
FIG. 5 a,guide rail 142 a is located at the inner portion offrame 142. In embodiments,guide rail 142 a has a groove-shaped section.Sensor frame 143 may be attached to guiderail 142 a, may have a hexahedral plate shape, and may have an opening. As illustrated inFIG. 5 b, locking protrusion 143 a may be located at the end ofsensor frame 143. Locking protrusion 143 a may be coupled toguide rail 142 a, such thatsensor frame 143 can move alongguide rail 142 a. -
Sensor frame 143 may include an opening in a centralarea having slot 143 b.Imaging device 144 may be inserted intoslot 143 b.Imaging device 144 may move alongslot 143 b ofsensor frame 143 while crossingwafer 20.Sensor frame 143 may move alongguide rail 142 a offrame 142 andimaging device 144 may move alongslot 143 b ofsensor frame 143 while crossing thewafer 20. In embodiments, a seed layer formed on the top surface ofwafer 20 may be precisely detected bysensor frame 143. - The number of imaging devices (e.g. imaging device 144) may vary depending on the required inspection precision for a wafer. A plurality of sensor frames (e.g. sensor frame 143) may be coupled to
frame 142. In embodiments,imaging device 144 may include a light emitting diode and a light receiving diode. In embodiments,imaging device 144 may include a light irradiation unit to photographwafer 20. - Embodiments relate to a method of detecting a seed layer formed on the top surface of a wafer using a seed layer detecting device. A seed layer detecting device may be included in a device which forms layers on the semiconductor device.
- In embodiments, a metal layer is deposited on the top surface of a wafer through a metal layer deposition process. During the metal layer deposition process, heat (e.g. with a temperature higher than room temperature) may be applied to a wafer. If the top surface of a wafer (e.g. including a seed layer) is contaminated by particles (or similar objects), voids may be created in a semiconductor device after a plating process. To prevent voids,
wafer 20 may be transferred intovacuum chamber 11 ofaligner 10 bytransfer arm 16.Wafer 20 may be loaded on pins 15 (e.g. 3-4 pins) and aligned in a predetermined direction based on the center and align marks ofwafer 20. - After
wafer 20 has been aligned, the flat zone ofwafer 20 may make contact with poles 13 such that centering and flat zone alignment ofwafer 20 may be precisely achieved. Imaging device 144 (e.g. which may be located onsensor frame 143 surrounding wafer 20) may detect a seed layer formed on the top surface ofwafer 20. - Imaging device 144 (e.g. which may be located on sensor frame 143) may move in a circumferential direction of
wafer 20 alongguide rail 142 a offrame 142. Imaging device may move alongslot 143 b ofsensor frame 143 while crossingwafer 20. The position ofimaging device 144 may be changed based on the size ofwafer 20. - In embodiments,
imaging device 144 may include a light emitting diode and a light receiving diode. Light irradiated onto the surface ofwafer 20 from a light emitting diode may be reflected by a seed layer formed onwafer 20, so that light is reflected back toimaging device 144 and into a light receiving diode. A central processing unit may determine if a seed layer is formed on the top surface ofwafer 20 based on the light response received at a light receiving diode. - If there are areas on the top surface of
wafer 20 that do not include a seed layer, light irradiated from a light emitting diode onto those areas ofwafer 20 will be substantially totally reflected. If a seed layer is formed on the entire top surface ofwafer 20, light irradiated ontowafer 20 from light emitting diode will be partially reflected(i.e. have a scattered reflection). - When light reflected from
wafer 20 is reflected into a light receiving diode, light receiving diode may generate a current having a predetermined intensity. Generated current may be input into a central processing unit. A central processing unit may store a signal (e.g. which may be amplified by a signal amplifier) and may compare the value of the signal with predetermined signal value to determining if a seed layer is formed on the top surface ofwafer 20. - In embodiments,
imaging device 144 may include a camera to inspect the surface ofwafer 20. Light may be irradiated onto the surface ofwafer 20 from a light irradiation unit. A camera may have a resolution of a micrometer. A camera may include an objective lens group and/or a CCD (charge coupled device) which converts an optical image into an electric signal. A light irradiation unit may include a light source (e.g. a halogen lamp in embodiments) and a condenser lens which focuses light. - A central processing unit may generate on/off signals by detecting a seed layer based on a signal input into light receiving diode. If it is determined that a seed layer formed on
wafer 20 has a defect,wafer 20 may be transferred to an apparatus for forming a seed layer by a transfer arm. - In embodiments, a seed layer may be detected by inspecting the surface of a wafer resting on an aligner using an imaging device included in the aligner. Accordingly, it may not be necessary to detect a seed layer outside of an aligner. In embodiments, a seed layer may be detected before a plating process.
- A wafer with a seed layer may then be transferred to a plating chamber for implantation of a plating process. In embodiments, a plating layer may be formed on the entire surface of a seed layer of
wafer 20. In embodiments, a plating layer may be selectively formed onwafer 20 by forming a photoresist pattern onwafer 20. - Current may be applied to a seed layer to charge the seed layer. A metal deposition solution may be fed onto a charged seed layer so that a metal layer (e.g. a copper metal layer) can be deposited on the seed layer. A seed layer primarily formed on
wafer 20 may include a copper interconnection layer formed on the surface ofwafer 20. Since a seed layer may easily react with copper particles, a copper interconnection layer having desirable characteristics may be achieved. - In embodiments, a seed layer may be detected before a plating process (e.g. which forms an interconnection layer), which may improve reliability. Embodiments may prevent a wafer having no seed layer from being loaded into a plating apparatus, which may improve the yield rate of wafers and/or may prevent a semiconductor manufacturing device from being damaged or broken. In embodiments, when a wafer is formed with a seed layer having defects, the wafer is prevented from being transferred to subsequent processing stages, which may improve reliability and/or allow workers to more effectively manage processes. In embodiments, since a wafer may be inspected using an imaging sensor located in a sensor frame (e.g. which may be easily mounted on an alignment apparatus), inspection time may be shortened for a more efficient semiconductor manufacturing process.
- It will be apparent to those skilled in the art that various modifications and variations can be made to embodiments. Thus, it is intended that embodiments cover modifications and variations thereof within the scope of the appended claims.
Claims (12)
1-23. (canceled)
24. An apparatus comprising:
an annular frame located above a wafer with a shape corresponding to an edge of the wafer;
a sensor frame coupled to the annular frame; and
a detection unit coupled to the sensor frame, which is configured to detect a seed layer on the wafer,
wherein the detecting unit comprises an imaging device which is configured to photograph a wafer.
25. The apparatus of claim 24 , wherein:
the sensor frame is attached to a guide rail; and
the guide rail is located at an inner portion of the annular frame.
26. The apparatus of claim 25 , wherein the guide rail is a groove at the inner portion of the annular frame.
27. The apparatus of claim 24 , wherein the sensor frame has an elongated opening and the detecting unit is installed in the elongated opening.
28. The apparatus of claim 24 , wherein the detecting unit comprises a light emitting diode configured to irradiate light onto the wafer and a light receiving diode configured to detect the light reflected from the wafer.
29. The apparatus of claim 24 , wherein:
a support bar is coupled to the annular frame;
the support bar allows the annular frame to be spaced apart from the wafer;
a coupling member is coupled to the support bar; and
a support plate is coupled to the coupling member.
30. The apparatus of claim 29 , wherein the coupling member comprises a coupling slot coupled to the support plate.
31. The apparatus of claim 24 , comprising a central processing unit coupled to the detection unit which is configured to process a detection signal transmitted from the detection unit.
32. The apparatus of claim 24 , wherein the detection unit comprises:
a light irradiation unit which is configured to irradiate light onto a top surface of the wafer;
a lens group which is configured to focus light to allow the detection unit to perform micro-photographing; and
an optoelectronic device which is configured to convert an optical image into an electric signal.
33. A method comprising:
moving a sensor frame into a position to inspect a wafer, wherein the sensor frame is coupled to an annular frame, wherein the annular frame has a shape corresponding to an edge of the wafer, and wherein the annular frame is located above the wafer;
detecting a seed layer formed on the wafer using a detection unit coupled to the sensor frame;
generating a detection signal using the detection unit; and
determining if the seed layer formed on the wafer has defects based on the detection signal,
wherein the detection unit photographs the wafer.
34. The method of claim 33 , wherein the detection unit detects light reflected from the wafer.
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US12/512,815 US20090289172A1 (en) | 2005-10-11 | 2009-07-30 | Detection of seed layers on a semiconductor device |
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KR10-2005-0095257 | 2005-10-11 | ||
KR1020050095257A KR100836501B1 (en) | 2005-10-11 | 2005-10-11 | Image Sensor of Thin Film Processing Device for fabricating semiconductor devices |
US11/548,453 US7586597B2 (en) | 2005-10-11 | 2006-10-11 | Detection of seed layers on a semiconductor device |
US12/512,815 US20090289172A1 (en) | 2005-10-11 | 2009-07-30 | Detection of seed layers on a semiconductor device |
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US11/548,453 Continuation US7586597B2 (en) | 2005-10-11 | 2006-10-11 | Detection of seed layers on a semiconductor device |
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US11/548,453 Expired - Fee Related US7586597B2 (en) | 2005-10-11 | 2006-10-11 | Detection of seed layers on a semiconductor device |
US12/512,815 Abandoned US20090289172A1 (en) | 2005-10-11 | 2009-07-30 | Detection of seed layers on a semiconductor device |
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KR (1) | KR100836501B1 (en) |
Families Citing this family (6)
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US7667835B2 (en) * | 2006-08-28 | 2010-02-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for preventing copper peeling in ECP |
US9809898B2 (en) | 2013-06-26 | 2017-11-07 | Lam Research Corporation | Electroplating and post-electrofill systems with integrated process edge imaging and metrology systems |
US9822460B2 (en) | 2014-01-21 | 2017-11-21 | Lam Research Corporation | Methods and apparatuses for electroplating and seed layer detection |
US9735035B1 (en) | 2016-01-29 | 2017-08-15 | Lam Research Corporation | Methods and apparatuses for estimating on-wafer oxide layer reduction effectiveness via color sensing |
US10126127B2 (en) * | 2016-04-29 | 2018-11-13 | Microsoft Technology Licensing, Llc | Athermalized mounting of inertial measurement unit |
US10872794B2 (en) * | 2017-06-20 | 2020-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Automatic in-line inspection system |
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Also Published As
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US7586597B2 (en) | 2009-09-08 |
KR20070040020A (en) | 2007-04-16 |
KR100836501B1 (en) | 2008-06-09 |
US20070087530A1 (en) | 2007-04-19 |
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