US20070084729A1 - Contact assembly cleaning in an electrochemical mechanical processing apparatus - Google Patents
Contact assembly cleaning in an electrochemical mechanical processing apparatus Download PDFInfo
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- US20070084729A1 US20070084729A1 US11/251,581 US25158105A US2007084729A1 US 20070084729 A1 US20070084729 A1 US 20070084729A1 US 25158105 A US25158105 A US 25158105A US 2007084729 A1 US2007084729 A1 US 2007084729A1
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- contact assembly
- contact
- assembly
- electrolyte
- platen
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
- B23H5/08—Electrolytic grinding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
- B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
Abstract
Embodiments of the invention generally provide a method and apparatus for cleaning an electrical contact in an electrochemical mechanical planarizing apparatus. In one embodiment, a method for cleaning a contact assembly in an electroprocessing apparatus includes the steps of draining electrolyte from the contact assembly and flowing a rinsing fluid into the contact assembly. In another embodiment, a method for cleaning a contact assembly in an electroprocessing apparatus includes the steps of preventing fluid from passing between an interface of the contact assembly and a pad disposed outward thereof, flowing a rinsing fluid into the contact assembly and draining fluid flowing out of the contact assembly.
Description
- This application is a related to U.S. patent application Ser. No. 11/228,035, filed on Sep. 15, 2005, (Attorney Docket No. 4100P15) which is incorporated by reference in its entirety.
- 1. Field of the Invention
- Embodiments of the present invention generally relate to a method and apparatus cleaning a contact assembly in an electrochemical mechanical processing apparatus.
- 2. Description of the Related Art
- Electrochemical mechanical planarizing (ECMP) is a technique used to remove conductive materials from a substrate surface by electrochemical dissolution while concurrently polishing the substrate with reduced mechanical abrasion compared to conventional planarization processes. ECMP systems may generally be adapted for deposition of conductive material on the substrate by reversing the polarity of the bias. Electrochemical dissolution is performed by applying a bias between a cathode and a substrate surface to remove conductive material from the substrate surface into a surrounding electrolyte. Typically, the bias is applied to the substrate surface by a conductive surface that is part of or passing through a polishing material on which the substrate is processed. A mechanical component of the polishing process is performed by providing relative motion between the substrate and the polishing material that enhances the removal of the conductive material from the substrate.
- During ECMP processing, the conductive material is electrical biased by one or more contact elements. The contact elements are subject to corrosion and/or attack by processing chemistries, thereby resulting in diminished electrical conduction to substrates over a period of processing cycles. As the efficiency of the electrical contact is diminished, processing of a substrate is impaired. For example, poor electrical contact between the contact elements and the substrate may result in defects, such as pitting or scratching of the conductive material being removed from the substrate. Moreover, sludge and/or other deposits may accumulate around the electrical contact, further obstructing the maintenance of good electrical biasing of the substrate through the contact element. Good electrical connections for biasing the substrate must be preserved in order to maintain robust process performance.
- Thus, there is a need for an improved method and apparatus for maintaining good electrical contact in an electrochemical processing apparatus.
- Embodiments of the invention generally provide a method and apparatus for cleaning an electrical contact in an electrochemical mechanical planarizing apparatus. In one embodiment, a method for cleaning a contact assembly in an electroprocessing apparatus includes the steps of draining electrolyte from the contact assembly and flowing a rinsing fluid into the contact assembly. In another embodiment, a method for cleaning a contact assembly in an electroprocessing apparatus includes the steps of preventing fluid from passing between an interface of the contact assembly and a pad disposed outward thereof, flowing a rinsing fluid into the contact assembly and draining fluid flowing out of the contact assembly.
- So that the manner in which the above recited embodiments of the invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
-
FIG. 1 is a plan view of an electrochemical mechanical processing system; -
FIG. 2 is a sectional view of one embodiment of a bulk electrochemical mechanical processing (ECMP) station of the system ofFIG. 1 ; -
FIG. 3 is a partial sectional view of one embodiment of a platen assembly of the bulk ECMP station ofFIG. 2 ; -
FIG. 4A is a partial sectional view of the bulk ECMP station through two contact assemblies; - FIGS. 4B-C are sectional views of plugs;
- FIGS. 5A-C are side, exploded and sectional views of one embodiment of a contact assembly;
-
FIG. 5D is a sectional view of alternative embodiment of the housing of FIGS. 5A-C; -
FIG. 6 is one embodiment of a contact element; -
FIG. 7 is a perspective view of another embodiment of a bulk ECMP station; -
FIGS. 8-9 are perspective and partial sectional views of a contact assembly; -
FIG. 10 is a flow diagram of one embodiment of a method for cleaning a contact assembly; -
FIG. 11 is a partial sectional view of another embodiment of a contact assembly disposed on a platen; -
FIG. 12 is a flow diagram of another embodiment of a method for cleaning a contact assembly; -
FIG. 13 is a schematic side view of another embodiment of a ECMP station; -
FIG. 14 is a schematic top view of another embodiment of an ECMP station; and -
FIG. 15 is a sectional view of one embodiment of a residual ECMP station. - To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that embodiments present in one embodiment may be beneficially incorporated in other embodiments with out further recitation.
- Embodiments for a system and method for removal of conductive material from a substrate are provided. Although the embodiments disclosed below focus primarily on removing material from, e.g., planarizing, a substrate, it is contemplated that the teachings disclosed herein may be used to deposit material on a substrate by reversing the polarity of an electrical bias applied between the substrate and an electrode of the system.
-
FIG. 1 is a plan view of one embodiment of aplanarization system 100 having an apparatus for electrochemically processing a substrate. Theexemplary system 100 generally comprises afactory interface 102, aloading robot 104, and a planarizingmodule 106. Theloading robot 104 is disposed proximate thefactory interface 102 and theplanarizing module 106 to facilitate the transfer ofsubstrates 122 therebetween. - A
controller 108 is provided to facilitate control and integration of the modules of thesystem 100. Thecontroller 108 comprises a central processing unit (CPU) 110, amemory 112, andsupport circuits 114. Thecontroller 108 is coupled to the various components of thesystem 100 to facilitate control of, for example, the planarizing, cleaning, and transfer processes. - The
factory interface 102 generally includes acleaning module 116 and one ormore wafer cassettes 118. Aninterface robot 120 is employed to transfersubstrates 122 between thewafer cassettes 118, thecleaning module 116 and aninput module 124. Theinput module 124 is positioned to facilitate transfer ofsubstrates 122 between theplanarizing module 106 and thefactory interface 102 by grippers, for example, vacuum grippers or mechanical clamps. - The
planarizing module 106 includes at least a first electrochemical mechanical planarizing (ECMP)station 128, and optionally, at least one conventional chemical mechanical planarizing (CMP)station 132 disposed in an environmentally controlledenclosure 188. Examples of planarizingmodules 106 that can be adapted to benefit from the invention include MIRRA®, MIRRA MESA™, REFLEXION®, REFLEXION® LK, and REFLEXION LK Ecmp™ Chemical Mechanical Planarizing Systems, all available from Applied Materials, Inc. of Santa Clara, Calif. Other planarizing modules, including those that use processing pads, planarizing webs, or a combination thereof, and those that move a substrate relative to a planarizing surface in a rotational, linear or other planar motion may also be adapted to benefit from the invention. - In the embodiment depicted in
FIG. 1 , theplanarizing module 106 includes thefirst ECMP station 128, asecond ECMP station 130 and oneCMP station 132. Bulk removal of conductive material from the substrate is performed through an electrochemical dissolution process at thefirst ECMP station 128. After the bulk material removal at thefirst ECMP station 128, residual conductive material is removed from the substrate at thesecond ECMP station 130 through a second electrochemical mechanical process. It is contemplated that more than oneresidual ECMP station 130 may be utilized in theplanarizing module 106. - A conventional chemical mechanical planarizing process is performed at the
planarizing station 132 after processing at thesecond ECMP station 130. An example of a conventional CMP process for the removal of copper is described in U.S. Pat. No. 6,451,697, issued Sep. 17, 2002, which is incorporated by reference in its entirety. An example of a conventional CMP process for the barrier removal is described in U.S. patent application Ser. No. 10/187,857, filed Jun. 27, 2002, which is incorporated by reference in its entirety. It is contemplated that other CMP processes may be alternatively performed. As theCMP stations 132 are conventional in nature, further description thereof has been omitted for the sake of brevity. - The
exemplary planarizing module 106 also includes atransfer station 136 and acarousel 134 that are disposed on an upper orfirst side 138 of amachine base 140. In one embodiment, thetransfer station 136 includes aninput buffer station 142, anoutput buffer station 144, atransfer robot 146, and aload cup assembly 148. Theinput buffer station 142 receives substrates from thefactory interface 102 by theloading robot 104. Theloading robot 104 is also utilized to return polished substrates from theoutput buffer station 144 to thefactory interface 102. Thetransfer robot 146 is utilized to move substrates between thebuffer stations load cup assembly 148. - In one embodiment, the
transfer robot 146 includes two gripper assemblies, each having pneumatic gripper fingers that hold the substrate by the substrate's edge. Thetransfer robot 146 may simultaneously transfer a substrate to be processed from theinput buffer station 142 to theload cup assembly 148 while transferring a processed substrate from theload cup assembly 148 to theoutput buffer station 144. An example of a transfer station that may be used to advantage is described in U.S. Pat. No. 6,156,124, issued Dec. 5, 2000 to Tobin, which is herein incorporated by reference in its entirety. - The
carousel 134 is centrally disposed on thebase 140. Thecarousel 134 typically includes a plurality ofarms 150, each supporting aplanarizing head assembly 152. Two of thearms 150 depicted inFIG. 1 are shown in phantom such that aplanarizing surface 126 of thefirst ECMP station 128 and thetransfer station 136 may be seen. Thecarousel 134 is indexable such that theplanarizing head assemblies 152 may be moved between theplanarizing stations transfer station 136. One carousel that may be utilized to advantage is described in U.S. Pat. No. 5,804,507, issued Sep. 8, 1998 to Perlov, et al., which is hereby incorporated by reference in its entirety. - A
conditioning device 182 is disposed on the base 140 adjacent each of theplanarizing stations conditioning device 182 periodically conditions the planarizing material disposed in thestations -
FIG. 2 depicts a sectional view of one of the planarizinghead assemblies 152 positioned over one embodiment of thefirst ECMP station 128. Theplanarizing head assembly 152 generally comprises adrive system 202 coupled to aplanarizing head 204. Thedrive system 202 generally provides at least rotational motion to theplanarizing head 204. Theplanarizing head 204 additionally may be actuated toward thefirst ECMP station 128 such that thesubstrate 122 retained in theplanarizing head 204 may be disposed against theplanarizing surface 126 of thefirst ECMP station 128 during processing. Thedrive system 202 is coupled to thecontroller 108 that provides a signal to thedrive system 202 for controlling the rotational speed and direction of the planarizinghead 204. - In one embodiment, the planarizing head may be a TITAN HEAD™ or TITAN PROFILER™ wafer carrier manufactured by Applied Materials, Inc. Generally, the
planarizing head 204 comprises ahousing 214 and retainingring 224 that defines a center recess in which thesubstrate 122 is retained. The retainingring 224 circumscribes thesubstrate 122 disposed within theplanarizing head 204 to prevent the substrate from slipping out from under theplanarizing head 204 while processing. The retainingring 224 can be made of plastic materials such as PPS, PEEK, and the like, or conductive materials such as stainless steel, Cu, Au, Pd, and the like, or some combination thereof. It is further contemplated that aconductive retaining ring 224 may be electrically biased to control the electric field during ECMP. It is contemplated that other planarizing heads may be utilized. - The
first ECMP station 128 generally includes aplaten assembly 230 that is rotationally disposed on thebase 140. Theplaten assembly 230 is supported above thebase 140 by abearing 238 so that theplaten assembly 230 may be rotated relative to thebase 140. An area of the base 140 circumscribed by thebearing 238 is open and provides a conduit for the electrical, mechanical, pneumatic, control signals and connections communicating with theplaten assembly 230. - Conventional bearings, rotary unions and slip rings, collectively referred to as
rotary coupler 276, are provided such that electrical, mechanical, fluid, pneumatic, control signals and connections may be coupled between the base 140 and therotating platen assembly 230. Theplaten assembly 230 is typically coupled to amotor 232 that provides the rotational motion to theplaten assembly 230. Themotor 232 is coupled to thecontroller 108 that provides a signal for controlling the rotational speed and direction of theplaten assembly 230. - The
platen assembly 230 has anupper plate 236 and alower plate 234. Theupper plate 236 may be fabricated from a rigid material, such as a metal or rigid plastic, and in one embodiment, is fabricated from or coated with a dielectric material, such as CPVC. Theupper plate 236 may have a circular, rectangular or other plane form. Atop surface 260 of theupper plate 236 supports aprocessing pad assembly 222 thereon. The processing pad assembly may be retained to theupper plate 236 by magnetic attraction, vacuum, clamps, adhesives and the like. - The
lower plate 234 is generally fabricated from a rigid material, such as aluminum. In the embodiment depicted inFIG. 2 , the upper andlower plates FIG. 2 ) are disposed between the upper andlower plates upper plate 236 and thelower plate 234 may optionally be fabricated from a single, unitary member. - A
plenum 206 is defined in theplaten assembly 230. Theplenum 206 may be partially formed in at least one of the upper orlower plates FIG. 2 , theplenum 206 is defined in arecess 208 partially formed in the lower surface 262 of theupper plate 236. A plurality ofholes 210 are formed in theupper plate 236 to allow electrolyte, provided to theplenum 206 from anelectrolyte source 248, to flow uniformly though theplaten assembly 230 and into contact with thesubstrate 122 during processing. Theplenum 206 is partially bounded by acover 212 coupled to theupper plate 236 enclosing therecess 208. -
FIG. 3 is a partial sectional view of theplaten assembly 230 showing one embodiment of thecover 212 in greater detail. Thecover 212 is sealingly coupled to theupper plate 236 by a plurality offasteners 312. Aplenum seal 314 is disposed between thecover 212 andupper plate 236. - The
cover 212 includes a first aperture 302, asecond aperture 304 and athird aperture 306. The first andsecond apertures 302, 304 provide an inlet and outlet that couple theplenum 206 through thecover 212 to theelectrolyte source 248. In one embodiment, the first andsecond apertures 302, 304 engagemale fittings 308 that mate withholes 340 formed in thelower plate 234. Aradial seal 310, for example, an o-ring or lobed seal, is disposed between thefittings 308 and bore of theholes 340 to provide a fluid seal that prevents electrolyte from leaking out of theplenum 206 through thecover 212. - The
third aperture 306 is circumscribed by aseal 316 that isolates thethird aperture 306 from electrolyte disposed within theplenum 206. In one embodiment, theseal 316 is positioned outward ofsecond plenum seal 344 to provide an additional barrier between the first bayonet fitting 318 and the electrolyte disposed in theplenum 206. - A first bayonet fitting 318 is disposed through the
third aperture 306 and couples acontact plate 320, disposed in theplenum 206 and coupled to theupper plate 236, to a socket 322 disposed in thelower plate 234. The socket 322 is coupled by afirst power line 324 disposed in apassage 326 formed in thelower plate 234 to thepower source 242 through the rotary coupler 276 (as shown inFIG. 2 ). - A
second line 328 is disposed through thelower plate 234 coupling asocket 334 disposed proximate the perimeter of thelower plate 234 to thepower source 242. A second bayonet fitting 332 is coupled to acontact member 336 disposed in theupper plate 236. Thecontact member 336 includes a threadedhole 338 or other element exposed to thetop surface 260 of theupper plate 236 that is suitable for electrically coupling thecontact member 336 to theprocessing pad assembly 222. In the embodiment depicted inFIG. 3 , theprocessing pad assembly 222 is coupled by the second bayonet fitting 332 to thepower source 242. - The
bayonet fittings pins 220 facilitate alignment of theplates upper plate 236 is disposed on thelower plate 234. This advantageously provides both ease of assembly with robust electrical and fluid coupling between theplates - Referring additionally to
FIG. 2 , theprocessing pad assembly 222 includes anelectrode 292 and at least aplanarizing portion 290. At least onecontact assembly 250 extends above theprocessing pad assembly 222 and is adapted to electrically couple the substrate being processing on theprocessing pad assembly 222 to thepower source 242. - The
electrode 292 is also coupled to thepower source 242 so that an electrical potential may be established between the substrate andelectrode 292. In one embodiment theelectrode 292 is electrically coupled to thepower source 242 by afastener 380 disposed through theelectrode 292 and engaging the threadedhole 338 of the contact member 336 (as shown inFIG. 3 ). - The
electrode 292 is typically comprised of a conductive material, such as stainless steel, copper, aluminum, gold, silver and tungsten, among others. Theelectrode 292 may be solid, impermeable to electrolyte, permeable to electrolyte or perforated. In the embodiment depicted inFIG. 3 , theelectrode 292 is configured to allow electrolyte therethrough. Theelectrode 292 may be permeable, have holes formed therethrough or a combination thereof. Theelectrode 292 is disposed on thetop surface 260 of theplaten assembly 230 and is coupled to thepower source 242 through theplaten assembly 230. - Embodiments of the
processing pad assembly 222 suitable for bulk removal of material from thesubstrate 122 may generally include a planarizing surface that is substantially dielectric. As the conductive material to be removed from thesubstrate 122 substantially covers thesubstrate 122, fewer contacts for biasing thesubstrate 122 are required. Embodiments of theprocessing pad assembly 222 suitable for residual removal of material from thesubstrate 122 may generally include a planarizing surface that is substantially conductive. As the conductive material to be removed from thesubstrate 122 comprises isolated islands of material disposed on thesubstrate 122, more contacts for biasing thesubstrate 122 are required. - In one embodiment, the
planarizing layer 290 of theprocessing pad assembly 222 may include aplanarizing surface 364 that is dielectric, such as a polyurethane pad.Apertures 390 are formed through theplanarizing surface 364 to expose theelectrode 292 such that electrolyte may create a conductive path (or cell) between the substrate and electrode. Examples of processing pad assemblies that may be adapted to benefit from the invention are described in U.S. patent application Ser. No. 10/455,941, filed Jun. 6, 2003 by Y. Hu et al. (entitled “CONDUCTIVE PLANARIZING ARTICLE FOR ELECTROCHEMICAL MECHANICAL PLANARIZING”) and U.S. patent application Ser. No. 10/455,895, filed Jun. 6, 2003 by Y. Hu et al. (entitled “CONDUCTIVE PLANARIZING ARTICLE FOR ELECTROCHEMICAL MECHANICAL PLANARIZING”), both of with are hereby incorporated by reference in their entireties. -
FIG. 4A is a partial sectional view of thefirst ECMP station 128 through twocontact assemblies 250, and FIGS. 5A-C are side, exploded and sectional views of one of thecontact assemblies 250 shown inFIG. 4A . Theplaten assembly 230 includes at least onecontact assembly 250 projecting therefrom and coupled to thepower source 242 that is adapted to bias a surface of thesubstrate 122 during processing. Thecontact assemblies 250 may be coupled to theplaten assembly 230, part of theprocessing pad assembly 222, or a separate element. Although twocontact assemblies 250 are shown inFIG. 4A , any number of contact assemblies may be utilized and may be distributed in any number of configurations relative to the centerline of theupper plate 236. - The
contact assemblies 250 are generally electrically coupled to thecontact plate 320 through theupper plate 236 and extend at least partially throughrespective apertures 468 formed in theprocessing pad assembly 222. The position of thecontact assemblies 250 may be chosen to have a predetermined configuration across theplaten assembly 230. For predefined processes,individual contact assemblies 250 may be repositioned indifferent apertures 468, while apertures not containing contact assemblies may be plugged with astopper 492 or filled with anozzle 494 that allows flow of electrolyte from theplenum 206 to the substrate as shown in FIGS. 4B-C. One contact assembly that may be adapted to benefit from the invention is described in U.S. patent application Ser. No. 10/445,239, filed May 23, 2003, by Butterfield, et al., and is hereby incorporated by reference in its entirety. - Although the embodiments of the
contact assembly 250 described below with respect toFIG. 4A depicts a rolling ball contact, thecontact assembly 250 may alternatively comprise a structure or assembly having a conductive upper layer or surface suitable for electrically biasing thesubstrate 122. For example, thecontact assembly 250 may include a structure having an upper layer made from a conductive material or a conductive composite (i.e., the conductive elements are dispersed integrally with or comprise the material comprising the upper surface), such as a polymer matrix having conductive particles dispersed therein or a conductive coated fabric, among others. Other examples of suitable contact assemblies are described in U.S. Provisional Patent Application Ser. No. 60/516,680, filed Nov. 3, 2003, by Hu, et al., which is hereby incorporated by reference in its entirety. - In one embodiment, each of the
contact assemblies 250 includes ahollow housing 402, anadapter 404, aball 406, acontact element 414 and aclamp bushing 416. Theball 406 has a conductive outer surface and is movably disposed in thehousing 402. Theball 406 may be disposed in a first position having at least a portion of theball 406 extending above theplanarizing surface 364 and at least a second position where theball 406 is flush with theplanarizing surface 364. Theball 406 is generally suitable for electrically coupling thesubstrate 122 to thepower source 242 through thecontact plate 320. - The
power source 242 generally provides a positive electrical bias to theball 406 during processing. Between planarizing substrates, thepower source 242 may optionally apply a negative bias to theball 406 to minimize attack on theball 406 by process chemistries. - The
housing 402 is configured to provide a flow of electrolyte from thesource 248 to the substrate during processing. Thehousing 402 is fabricated from a dielectric material compatible with process chemistries. In one embodiment, thehousing 402 is made of PEEK. Thehousing 402 has afirst end 408 and asecond end 410. Adrive feature 412 is formed in and/or on thefirst end 408 to facilitate installation of thecontact assembly 250 to thecontact plate 320. Thedrive feature 412 may be holes for a spanner wrench, a slot or slots, a recessed drive feature (such as for a TORX® or hex drive, and the like) or a projecting drive feature (such as wrench flats or a hex head, and the like), among others. Thefirst end 408 additionally includes aseat 426 that prevents theball 406 from passing out of thefirst end 408 of thehousing 402. Theseat 426 optionally may include one ormore grooves 448 formed therein that allow fluid flow to exit thehousing 402 between theball 406 andseat 426. Maintaining fluid past theball 406 may minimize the propensity of process chemistries to attack theball 406. - In one embodiment, a plurality of
grooves 448 is formed around theseat 426 in a spaced apart relation. The spaced apart relation of thegrooves 448 provides a more uniform electrolyte lead flow distribution around theball 406, thereby enhancing corrosion protection of the ball. Moreover, the bleed flow allows the force applied to the balls to be the same with or without the substrate presence, compared to conventional housings without bleed flows where the ball force is dramatically different in the up and down position. In the embodiment depicted inFIG. 5B , sixgrooves 448 are shown spaced equidistant around theseat 428. - Alternatively as shown in
FIG. 5D , thegrooves 448 may be replaced or augmented by one ormore spacers 454 extending from the seat 426 (or housing 402). Thespacers 454 prevent theball 406 from contacting theseat 426 in a manner that prevents fluid from bleeding past theball 406 when theball 406 is urged against (or toward) theseat 426. - In another embodiment, one or
more relief holes 446 may be formed through thehousing 402 to allow fluid to exit thehousing 402 while theball 406 is disposed against theseat 426. The relief holes 446 prevent fluid from residing in thehousing 402 for extended periods, thereby minimizing accumulation of sludge or other contaminants that may stick to theball 406 and degrade electrical conductance, obstruct flow through thehousing 406 while processing, cause ball stiction or otherwise degrade processing performance. - The
contact element 414 is coupled between theclamp bushing 416 andadapter 404. Thecontact element 414 is generally configured to electrically connect theadapter 404 andball 406 substantially or completely through the range of ball positions within thehousing 402. In one embodiment, thecontact element 414 may be configured as a spring form. - In the embodiment depicted in
FIGS. 4 and 5 A-C and detailed inFIG. 6 , thecontact element 414 includes anannular base 442 having a plurality offlexures 444 extending therefrom in a polar array. Theflexure 444 includes twosupport elements 602 extending from the base 442 to adistal end 608. Thesupport elements 602 are coupled by a plurality ofrungs 604 to defineapertures 610 that facilitate flow past thecontact element 416 with little pressure drop as discussed further below. Acontact pad 606 adapted to contact theball 406 couples thesupport elements 602 at thedistal end 608 of eachflexure 444. Optionally, thecontact pad 606 may include afeature 612 formed thereon that defines the contact point between thepad 606 and theball 406. In one embodiment, thefeature 612 is a formed round element extending from thepad 606 toward the center on theelement 414. - The
flexure 444 is generally fabricated from a resilient and conductive material suitable for use with process chemistries. In one embodiment, theflexure 444 is fabricated from gold plated beryllium copper. - Returning to FIGS. 4A and 5A-B, the
clamp bushing 416 includes a flaredhead 524 having a threadedpost 522 extending therefrom. The clamp bushing may be fabricated from either a dielectric or conductive material, or a combination thereof, and in one embodiment, is fabricated from the same material as thehousing 402. The flaredhead 524 includes a flared flat 592 that maintains theflexures 444 at an acute angle relative to the centerline of thecontact assembly 250 so that thecontact pads 606 of thecontact elements 414 are positioned to spread around the surface of theball 406 to prevent bending, binding and/or damage to theflexures 444 during assembly of thecontact assembly 250 and through the range of motion of theball 406. - The
post 522 of theclamp bushing 416 is disposed through ahole 546 in thebase 442 and threads into a threadedportion 440 of apassage 436 formed through theadapter 404. Apassage 418 formed through theclamp bushing 416 includes adrive feature 420 at an end disposed in the flaredhead 524. Similarly, thepassage 436 includes adrive feature 438 in an end opposite the threadedportion 440. The drive features 420, 438 may be similar to those described above, and in one embodiment, are hexagonal holes suitable for use with a hex driver. Theclamp bushing 416 is tightened to a torque that ensures good electrical contact between thecontact element 414 and theadapter 404 without damaging thecontact element 414 or other component. - One or more slots or cross
holes 590 are formed through thehead 524 to thepassage 418. Thecross hole 590 routes at least a portion of the flow of electrolyte through thehousing 402 so that the volume within thehousing 402 is swept (i.e., the flow is routed so no areas within the housing experience a stagnant or no flow condition), thereby removing sludge or other contaminants that may otherwise accumulate within thehousing 402 and eventually lead to poor electrical conduction to the substrate through theball 406. In one embodiment, the cross holes 590 exit theclamp bushing 416 through theflats 492, thereby directing flow directly on theflexures 444 to ensure contaminants do not accumulate on thecontact element 414 or cause theflexure 444 to adhere to theball 406. Optionally, thepassage 418 may be blind and thecross hole 590 coupled to thepassage 436, such that the entire flow enters the housing through thecross hole 590 and is swept at a greater rate through thehousing 402. Since the fluid inlet to the housing 402 (e.g., the cross hole 590) is opposite the outlet (e.g., the center opening of the seat 426), the entire volume of thehousing 402 retaining theball 406 is swept by electrolyte flow, thereby ensuring that sludge and/or other contaminants do not accumulate within thehousing 402, resulting in extended robust electrical performance of thecontact assembly 250. - The
adapter 404 is generally fabricated from an electrically conductive material compatible with process chemistries, and in one embodiment, is fabricated from stainless steel. Theadapter 404 includes anannular flange 432 having a threadedpost 430 extending from one side and aboss 434 extending from the opposite side. The threadedpost 430 is adapted to mate with thecontact plate 320 disposed inrecess 208 of theupper plate 236 which couples therespective balls 406 in thecontact assemblies 250 to thepower source 242. - The
boss 434 is received in thesecond end 410 of thehousing 402 and provides a surface for clamping thecontact element 414 thereto. Theboss 434 additionally includes at least one threadedhole 506 disposed on the side of theboss 434 that engages afastener 502 disposed through ahole 504 formed in thehousing 402, thereby securing thehousing 402 to theadapter 404 and capturing theball 406 therein. In the embodiment depicted inFIG. 5A , three fasteners are shown for coupling thehousing 402 to theadapter 404 throughcounter-sunk holes 504. It is contemplated that thehousing 402 andadapter 404 may be fastened by alternative methods or devices, such as staking, adhering, bonding, press fit, dowel pins, spring pins, rivets and retaining rings, among others. - The
ball 406 may be solid or hollow and is typically fabricated from a conductive material. For example, theball 406 may be fabricated from a metal, conductive polymer or a polymeric material filled with conductive material, such as metals, conductive carbon or graphite, among other conductive materials. Alternatively, theball 406 may be formed from a solid or hollow core that is coated with a conductive material. The core may be non-conductive and at least partially coated with a conductive covering. Examples of suitable core materials include acrylonitrile butadiene styrene (ABS), polypropylene (PP), polyethylene (PE), polystyrene (PS), or polyamide-imide (PAI) (such as TORLON®), and the like. In one embodiment, theball 406 has a TORLON® or other polymer core coated with a layer of copper or other conductive material. - The
ball 406 is generally actuated toward theplanarizing surface 364 by at least one of spring, buoyant or flow forces. In the embodiment depicted inFIG. 4 , thepassages adapter 404 and clampbushing 416 are coupled through theupper plate 236 to theelectrolyte source 248. Theelectrolyte source 248 provides electrolyte through thepassages hollow housing 402. The electrolyte exits thehousing 402 between theseat 426 andball 406, thus causing theball 406 to be biased toward theplanarizing surface 364 and into contact with thesubstrate 122 during processing. - So that the force upon the
ball 406 is consistent across the different elevations of theball 406 within thehousing 402, a relief or groove 428 is formed in the interior wall of thehousing 402 to accept the distal ends (608 inFIG. 6 ) of theflexures 444 to prevent restricting the flow of electrolyte passing theball 406. An end of thegroove 428 disposed away from theseat 426 is generally configured to being at or below the diameter of theball 406 when theball 406 is in the lowered position. - In one embodiment, electrochemical attack on the
contact assembly 250 and/orballs 406 by processing chemistries and contaminant accumulation within thehousing 402 may be minimized by keeping a bleeding flow of processing chemistry around the balls to substantially prevents self catalytic reaction of the balls in the process chemistry (by removing the catalyst byproduct and other contaminants away from the ball), thus minimizing chemical attack on the balls by eliminating the presence of static process chemistry. Flow is maintained past theball 406 and out thehousing 402 by the path provided by thegroove 448 and/orrelief hole 446. - In another embodiment, minimizing electrochemical attack and cleaning of the electrical contacts within the
housing 402 are facilitated by rinsing thecontact assembly 250 and/orballs 406 after processing. For example, a rinsingfluid source 450 may be coupled through aselector valve 452 between theelectrolyte source 248 and thecontact assembly 250. The selector valve 452 (or other valve, not shown) may be utilized to isolate theplenum 206 from thesources selector valve 452 allows a rinsing fluid, such as de-ionized water, to be flowed through theplenum 206 and past theball 406 during idle periods (when no substrates are being polished on the platen assembly 230) to prevent theball 406 from being attacked by processing chemistries. It is contemplated that other configurations may be utilized to selectively couple theelectrolyte source 248 and the rinsingfluid source 450 to theplenum 206, or that theelectrolyte source 248 and the rinsingfluid source 450 may comprise a single fluid delivery system. Keeping a bleeding flow of processing chemistry around the balls all the time substantially prevents self catalytic reaction of the balls in the process chemistry (by removing the catalyst byproduct away from the ball), thus minimizing chemical attack on the balls by eliminating the presence of static process chemistry. - In another embodiment, a
drain system 472 may be coupled to theplenum 206. Thedrain system 472 allows fluids in the plenum 206 (andcontact assemblies 250 coupled thereto) to be removed without flowing onto theplanarizing surface 364 of thepad assembly 222. Avalve 470 selectively isolates thedrain system 472 from theplenum 206 to control the flow of fluids therebetween. The advantages of utilizing thedrain system 472 will become more apparent below. -
FIG. 7 is a perspective view of another embodiment of anECMP station 790 having another embodiment of acontact assembly 700 disposed therein, andFIGS. 8-9 are perspective and partial sectional views of thecontact assembly 700. TheECMP station 790 includes aplaten assembly 750 that supports a processing pad assembly 760 (partially shown inFIG. 7 ). Theplaten assembly 750 includes at least onecontact assembly 700 projecting therefrom that is coupled to apower source 242. Thecontact assembly 700 is adapted to electrically bias a surface of the substrate 122 (shown inFIG. 9 ) during processing. Although onecontact assembly 700 is shown coupled to the center of theplaten assembly 750 inFIG. 7 , any number of contact assemblies may be utilized and may be distributed in any number of configurations relative to the centerline of theplaten assembly 750. Thecontact assembly 700 may also comprise a structure having a conductive upper surface suitable for biasing thesubstrate 122, as discussed above with respect toFIG. 4 . - The
processing pad assembly 760 may be any pad assembly suitable for processing the substrate, including any of the embodiments described above. Theprocessing pad assembly 760 may include anelectrode 962 and aplanarizing layer 966. In one embodiment, theplanarizing layer 966 of theprocessing pad assembly 760 may include aplanarizing surface 964 that is dielectric, such as a polyurethane pad. In another embodiment, theplanarizing layer 966 of theprocessing pad assembly 760 may include aplanarizing surface 964 that is conductive or made from a conductive composite (i.e., the conduct elements are dispersed integrally with or comprise the material comprising the planarizing surface), such as a polymer matrix having conductive particles dispersed therein or a conductive coated fabric, among others. In the embodiment wherein theplanarizing surface 964 is conductive, theplanarizing surface 964 andelectrode 962 may be coupled to the power source 242 (shown by the dashed lines) via aswitch 996 that allows power to be selectively switched between thecontact assembly 700 and theconductive planarizing surface 964 to respectively facilitate bulk metal removal and residual metal removal from thesubstrate 122 without lifting thesubstrate 122 from theprocessing pad assembly 760. It is contemplated that theECMP station 128 may also be similarly configured with a conductive processing pad assembly. - The
contact assembly 700 is generally coupled to aconductive contact terminal 910 disposed in theplaten assembly 750 and extends at least partially through anaperture 968 formed in theprocessing pad assembly 760. Thecontact assembly 700 includes a housing 802 that retains a plurality ofballs 406. Theballs 406 are movably disposed in the housing 802, and may be disposed in a first position having at least a portion of theballs 406 extending above theplanarizing surface 964 and at least a second position where theballs 406 are flush with theplanarizing surface 964. Theballs 406 are generally suitable for electrically biasing thesubstrate 122. - The housing 802 is removably coupled to the
platen assembly 750 to facilitate replacement of thecontact assembly 700 after a number of planarizing cycles. In one embodiment, the housing 802 is coupled to theplaten assembly 750 by a plurality ofscrews 808. The housing 802 includes anupper housing 804 coupled to alower housing 806 that retains theballs 406 therebetween. Theupper housing 804 is fabricated from a dielectric material compatible with process chemistries. In one embodiment, theupper housing 804 is made of PEEK. Thelower housing 806 is fabricated from a conductive material compatible with process chemistries. In one embodiment, thelower housing 806 is made of stainless steel or other electrically conductive material. Thelower housing 806 is coupled by a bayonet fitting 912 to thecontact terminal 910 which is in turn coupled to thepower source 242. Thehousings FIGS. 7-9 , thehousings - The
balls 406 are disposed in a plurality ofapertures 902 formed through thehousings apertures 902 includes aseat 904 that extends into theaperture 902 from theupper housing 804. Theseat 904 is configured to prevent theball 406 from exiting the top end of theaperture 902. - A
contact element 414 is disposed in eachaperture 902 to electrically couple theball 406 to thelower plate 806. Each of thecontact elements 414 is coupled to thelower plate 806 by arespective clamp bushing 416. In one embodiment, apost 522 of theclamp bushing 416 is threaded into a threadedportion 914 of theaperture 902 formed through the housing 802. - During processing, the
balls 406 disposed within the housing 802 are actuated toward theplanarizing surface 760 by at least one of spring, buoyant or flow forces. Theballs 406 electrically couple thesubstrate 122 to thepower source 242 andcontact terminal 910 through thecontact elements 414 andlower plate 806. Electrolyte, flowing through the housing 802 provides a conductive path between theelectrode 962 andbiased substrate 122, thereby driving an electrochemical mechanical planarizing process. - In the embodiment depicted in
FIG. 9 , aplenum 940 may be formed in alower plate 942 of theplaten assembly 750. Anelectrolyte source 248 is coupled to theplenum 940 and flows electrolyte to theplanarizing surface 760 through theapertures 902 of thecontact assembly 700. In this configuration, atop plate 944 may optionally be a unitary component with thelower plate 942. Theplenum 940 may alternatively be disposed in thetop plate 944 as described above. - To prevent electrochemical attack and prevent accumulation of sludge or other contaminants from degrading the performance of the
balls 406 within the housing 802, thecontact assembly 700 is configured to maintain a bleed flow of electrolyte out of the housing 802 past theball 406 and to sweep the interior of the housing 802 with electrolyte flow. For example, one ormore grooves 950 and/orrelief holes 952 may be formed through the housing 802 allowing flow to exit the housing 802 during conditions where theball 406 is in contact with theseat 904. Additionally, theclamp bushing 416 may include across hole 590 to sweep the portion of the housing 802 as described above with reference to thecontact assembly 250. Optionally, thelower housing 806 may includeholes 954 formed therethrough to allow electrolyte to sweep alongside theclamp bushing 416, thereby ensuring the entire volume of the housing 802 retaining eachball 406 has no unswept regions. - As described with reference to
FIG. 4A , theplaten assembly 750 of theECPM station 790 includes adrain system 472 selectively coupled to theplenum 940 by avalve 470. Thedrain system 472 allows fluids in the plenum 206 (andcontact assemblies 250 coupled thereto) to be removed without flowing onto the surface of thepad assembly 760. -
FIG. 10 depicts a flow diagram of one embodiment of amethod 1000 for maintaining thecontact assembly 700 in a clean condition. The method may also be practiced using the other embodiments of the ECMP stations described herein. The method begins atstep 1002 by clearing the center portion (e.g., the area over the contact assembly 700) of excess electrolyte. This may be accomplished by rotating theplaten 750 at an RPM of less than about 25, for example 10-15 RPM. - At
step 1004, thevalve 470 is opened to allow the electrolyte disposed in theplenum 940 andcontact assembly 700 to be removed into thedrain system 472. In one embodiment, thedrain system 472 includes a vacuum source to assist in removing the fluids from theplenum 940 andcontact assembly 700. The platen rotation may be continued or stopped during this and subsequent steps. - At
step 1006, thevalve 470 is closed and thevalve 452 is opened to couple the rinsingfluid source 450 to theplenum 940. The rinsingfluid source 450 provides a rinsing fluid, as described above, to clean the contact elements of thecontact assembly 700. The rinsing fluid may optionally include one or more chemical agents that restore the electrical conductive properties to the surface of the contact elements, such as theballs 406, of thecontact assembly 700. - In one embodiment, the rinsing
fluid source 450 provides a predetermined amount of rinsing fluid such that little or no rinsing fluid is flowed out of thecontact assembly 700. Advantageously, this prevents contamination of electrolyte remaining on the pad assembly that may be utilized in subsequent substrate processing. Thus, in this embodiment, the volume of rinsing fluid provided is substantially equal to the volume of theplenum 940 and associated electrolyte passages disposed in theplaten 750 andcontact assembly 700. - At
step 1008, thevalve 452 is closed and thevalve 470 is opened to couple theplenum 940 to thedrain system 472. Thedrain system 472 removes the rinsing fluid from thecontact assembly 700 andplenum 750. Optionally,steps balls 406 of thecontact assembly 700. Alternatively, thestep 1006 may be timed to soak theballs 406 for a predefined period of time, for example, the time approximately equal to the time required to index a substrate between ECMP stations. - At
step 1010, thevalve 470 is closed and thevalve 452 is opened to couple theelectrolyte source 248 to theplenum 940. Theelectrolyte source 248 fills thecontact assembly 700 with electrolyte. As only the electrolyte is replaced in theplenum 940 andcontact assembly 700 during the cleaning process while the electrolyte remaining on theprocessing pad 760 is reused, the amount of electrolyte consumed while cleaning the electrical contacts is minimized, which provides a considerable savings in the cost of consumables. - The
method 1000 may be utilized as needed, periodically, or before each substrate is processed in theECMP station 790. It has been demonstrated that more frequent cleaning of thecontact assembly 700 reduces the creep of processing times associated with repetitive processing without electrical contact cleaning, and thus provides a stable, repeatable process. -
FIG. 11 depicts another embodiment of theECMP station 1100. TheECMP station 1100 is substantially similar to theECMP station 790 described above, except with the addition of adrain channel 1102 disposed radially outward of thecontact assembly 700. Thedrain channel 1102 is formed through theplaten 750 outward of theplenum 940, and is coupled to adrain system 1106. Thedrain system 1106 is substantially similar to thedrain system 450 described above, and may be selectively isolated from thechannel 1102 by avalve 1104. -
FIG. 12 depicts a flow diagram of another embodiment of amethod 1200 for maintaining thecontact assembly 700 in a clean condition. The method may also be practiced using the other embodiments of the ECMP stations described herein. The method begins atstep 1202 by opening thevalve 1104 to allow the electrolyte disposed in theplenum 940 and in thecontact assembly 700 to be removed into thedrain system 1106. In one embodiment, thedrain system 1106 includes a vacuum source to assist in removing the fluids from theplenum 940 andcontact assembly 700. The platen may optionally be rotated or stopped during this and subsequent steps. - In one embodiment, the
platen 750 is rotated at an RPM of less than about 25, for example 10-15 RPM, to move the fluids disposed on top of the contact assembly into thechannel 1102. The position of thechannel 1102 circumscribing thecontact assembly 700 provides a barrier that prevents mixing of fluids flowing out of thecontact assembly 700 from reaching theprocessing pad 760. - At
step 1204, thevalve 452 is opened to couple the rinsingfluid source 450 to theplenum 940. The rinsingfluid source 450 provides a rinsing fluid, as described above, to clean the contact elements of thecontact assembly 700. The rinsing fluid flows through thecontact assembly 700 and into thedrain system 1106, thus preventing contamination of electrolyte remaining on theprocessing pad 760 that may be utilized in subsequent processing operation. - In one embodiment, the rinsing
fluid source 450 provides a rinsing fluid at rate of about 1 to about 5 liters per minute. In another embodiment, the rinsingfluid source 450 provides a rinsing fluid at rate of about 2 liters per minute - Prior to processing, the
valve 452 is opened to couple theelectrolyte source 248 to theplenum 940. Theelectrolyte source 248 fills thecontact assembly 700 with electrolyte. Once the electrolyte displaces the rinsing fluid in theplenum 940 andcontact assembly 700, thedrain system 1106 may be isolated to keep the electrolyte from being drawn into the drain system during processing. It is contemplated that the rinsing fluid in thechannel 1102 may be replaced with electrolyte prior to closing thevalve 1104. -
FIG. 13 is a sectional view of anotherECMP station 1300. TheECMP station 1300 is substantially similar to those described above, and includes avacuum cup 1302 that may be selectively positioned over thecontact assembly 700. Thevacuum cup 1302 includes aninternal volume 1304 that covers thecontact assembly 700, and may additionally include asoft sealing surface 1314 to avoid damage to thecontact assembly 700 and/orprocessing pad 760 when in contact therewith. - The
vacuum cup 1302 is positioned over thecontact assembly 700 utilizing anarm 1306 coupled to amotor 1308. Thearm 1306 is generally coupled to thebase 140 of theECMP station 1300, or other suitable location. - The
interior volume 1304 of thevacuum cup 1302 is coupled to avacuum source 1312 via atube 1310 routed through thearm 1306. Thevacuum source 1312 allows the electrolye and/or rinsing fluids to be drawn through thecontact assembly 700 in any of the methods described above while preventing fluid utilized during cleaning from reaching the surface of theprocessing pad 760. -
FIG. 14 depicts a plan view of another embodiment of anECMP station 1400. Thestation 1400 includes arobot 1402 configured to selectively exchangecontact assemblies 700 between theplaten 750 and a rinsestation 1404 disposed laterally to theplaten 750. In one embodiment, the rinsestation 1404 is filled with a rinsing fluid that soaks the contact elements of the contact assembly not in use (shown as 700B inFIG. 14 ) while a cleaned contact assembly (shown as 700A inFIG. 14 ) is utilized on theplaten 750 for processing. - A portion of an exemplary mode of operation of the
processing system 100 is described primarily with reference toFIG. 2 . In operation, thesubstrate 122 is retained in theplanarizing head 204 and moved over theprocessing pad assembly 222 disposed on theplaten assembly 230 of thefirst ECMP station 128. Theplanarizing head 204 is lowered toward theplaten assembly 230 to place thesubstrate 122 in contact with the planarizing material. Electrolyte is supplied to theprocessing pad assembly 222 through the outlet 274 and flows into theprocessing pad assembly 222. - A bias voltage is applied from the
power source 242 between thecontact assemblies 250 and theelectrode 292 of thepad assembly 222. Thecontact assemblies 250 are in contact with the substrate and apply a bias thereto. The electrolyte filling theapertures 390 between theelectrode 292 and thesubstrate 122 provides a conductive path between thepower source 242 andsubstrate 122 to drive an electrochemical mechanical planarizing process that results in the removal of conductive material, such as copper, disposed on the surface of thesubstrate 122, by an anodic dissolution method. - Once the
substrate 122 has been adequately planarized by removal of conductive material at thefirst ECMP station 128, theplanarizing head 204 is raised to remove thesubstrate 122 from contact with theplaten assembly 230 and theprocessing pad assembly 222. Thesubstrate 122 may be transferred to one of theother ECMP stations 128, thesecond ECMP station 130 or theCMP station 132 for further processing before removal from theplanarizing module 106. While the substrate is being transferred, the contact assemblies of the ECMP station 128 (or others described above) are cleaned to provide process uniformity and good processing results. -
FIG. 15 is a sectional view of one embodiment of thesecond ECMP station 130. Thesecond ECMP station 130 generally includes aplaten 1502 that supports a fully conductiveprocessing pad assembly 1504. Theplaten 1502 may be configured similar to theplaten assembly 230 described above to deliver electrolyte through theprocessing pad assembly 1504, or theplaten 1502 may have a fluid delivery arm 1506 disposed adjacent thereto configured to supply electrolyte to a planarizing surface of theprocessing pad assembly 1504. - In one embodiment, the
processing pad assembly 1504 includes interposedpad 1512 sandwiched between aconductive pad 1510 and anelectrode 1514. Theconductive pad 1510 is substantially conductive across its top processing surface and is generally made from a conductive material or a conductive composite (i.e., the conductive elements are dispersed integrally with or comprise the material comprising the planarizing surface), such as a polymer matrix having conductive particles dispersed therein or a conductive coated fabric, among others. Theconductive pad 1510 and theelectrode 1514 may be fabricated like theconductive pad 966 and theelectrode 292 described above. Theprocessing pad assembly 1504 is generally permeable or perforated to allow electrolyte to pass between theelectrode 1514 andtop surface 1520 of theconductive pad 1510. In the embodiment depicted inFIG. 15 , theprocessing pad assembly 1504 is perforated byapertures 1522 to allow electrolyte to flow therethrough. In one embodiment, theconductive pad 1510 is comprised of a conductive material disposed on a polymer matrix disposed on a conductive fiber, for example, tin particles in a polymer matrix disposed on a woven copper coated polymer. Theconductive pad 1510 may also be utilized for thecontact assembly 700 in the embodiment ofFIG. 7 . - A
conductive foil 1516 may additionally be disposed between theconductive pad 1510 and thesubpad 1512. Thefoil 1516 is coupled to apower source 242 and provides uniform distribution of voltage applied by thesource 242 across theconductive pad 1510. Additionally, thepad assembly 1504 may include an interposedpad 1518, which, along with thefoil 1516, provides mechanical strength to the overlyingconductive pad 1510. Thefoil 1516 and interposedpad 1518 may be configured similar to the interposed layer 1538 and conductive backing 1536 described above. - Another portion of an exemplary mode of operation of the
processing system 150 is described primarily with reference toFIG. 15 . In operation, thesubstrate 122 retained in theplanarizing head 204 is moved over theprocessing pad assembly 1504 disposed on theplaten assembly 1502 of thesecond ECMP station 130. Theplanarizing head 204 is lowered toward theplaten assembly 1502 to place thesubstrate 122 in contact with thetop surface 1520 of theconductive pad 1510. Electrolyte is supplied to theprocessing pad assembly 222 through the delivery arm 1506 and flows into theprocessing pad assembly 1504. - A bias voltage is applied from the
power source 242 between thetop surface 1520 of theconductive pad 1510 and theelectrode 1514 of thepad assembly 1504. Thetop surface 1520 of theconductive pad 1510 is in contact with the substrate and applies an electrical bias thereto. The electrolyte filling theapertures 1522 between theelectrode 1514 and thesubstrate 122 provides a conductive path between thepower source 242 andsubstrate 122 to drive an electrochemical mechanical planarizing process that results in the removal of conductive material, such as copper, disposed on the surface of thesubstrate 122, by an anodic dissolution method. As thetop surface 1520 of theconductive pad 1510 is fully conductive, residual material, such as discrete islands of copper not completely removed through processing at the bulk ECMP station 158, may be efficiently removed. - Once the
substrate 122 has been adequately planarized by removal of residual conductive material at thesecond ECMP station 130, theplanarizing head 204 is raised to remove thesubstrate 122 from contact with theplaten assembly 1502 and theprocessing pad assembly 1504. Thesubstrate 122 may be transferred to another residual ECMP station or one of theCMP station 132 for further processing before removal from the planarizing module 156. - Thus, the present invention provides an improved apparatus and method for electrochemically planarizing a substrate. The apparatus advantageously facilitates efficient bulk and residual material removal from a substrate while protecting process components from damage during idle periods between processing. It is also contemplated that an apparatus arranged as described by the teachings herein, may be configured with solely the
bulk ECMP stations 108, with solely theresidual ECMP stations 130, with one or more bulk and/orresidual ECMP stations 130 arranged in cooperation with aconventional CMP station 132, or in any combination thereof. It is also contemplated that a method and apparatus as described by the teachings herein, may be utilized to deposit materials onto a substrate by reversing the polarity of the bias applied to the electrode and the substrate. - While the foregoing is directed to embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (20)
1. A method for cleaning a contact assembly in an electroprocessing apparatus, comprising:
draining electrolyte from the contact assembly; and
flowing a rinsing fluid into the contact assembly.
2. The method of claim 1 , wherein flowing the rinsing fluid into the contact assembly comprises:
flowing deionized water into the contact assembly.
3. The method of claim 1 , wherein flowing the rinsing fluid into the contact assembly comprises:
providing an agent that restores an electric property of the contact assembly.
4. The method of claim 1 further comprising:
draining the rinsing fluid from the contact assembly; and
flowing electrolyte into the contact assembly.
5. The method of claim 1 , wherein draining electrolyte from the contact assembly further comprises:
draining a plenum disposed in a platen.
6. The method of claim 1 , wherein draining electrolyte from the contact assembly further comprises:
sucking the fluid out of the contact assembly.
7. The method of claim 1 further comprising:
rotating the platen while draining the rinsing fluid from the contact assembly.
8. A method for cleaning a contact assembly in an electroprocessing apparatus, comprising:
preventing fluid from passing between an interface of the contact assembly and a pad disposed outward thereof;
flowing a rinsing fluid into the contact assembly; and
draining fluid flowing out of the contact assembly.
9. The method of claim 8 , wherein draining fluid flowing out of the contact assembly further comprises:
sucking the fluid through a passage formed radially outward of the contact assembly.
10. The method of claim 8 further comprising:
rotating the platen flowing the rinsing fluid into the contact assembly.
11. The method of claim 8 further comprising:
flowing electrolyte into the contact assembly to displace the rinsing fluid; and
removing the rinsing fluid.
12. An electroprocessing apparatus, comprising:
a platen;
a processing pad disposed on the platen;
a contact assembly coupled to the platen; and
a drain formed through the platen and disposed radially outwards of the contact assembly.
13. The apparatus of claim 12 , wherein the drain further comprises:
a selectively sealable channel formed through the platen.
14. The apparatus of claim 12 , wherein the selectively sealable channel further comprises:
a valve arranged to selectively seal the channel.
15. The apparatus of claim 12 further comprising:
a polishing fluid channel formed through the platen to a surface of the processing pad fluid inward of the drain.
16. The apparatus of claim 15 further comprising:
a plenum fluidly coupled to the polishing fluid channel and the drain.
17. The apparatus of claim 16 , wherein the plenum is formed below the surface of the processing pad.
18. The apparatus of claim 17 , wherein the plenum is formed in the platen.
19. The apparatus of claim 12 , wherein the drain is formed through the processing pad.
20. The apparatus of claim 12 further comprising:
an electrolyte delivery passageway for providing electrolyte to a surface of the processing pad, wherein the drain and electrolyte delivery passageway are separate.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/251,581 US20070084729A1 (en) | 2005-10-14 | 2005-10-14 | Contact assembly cleaning in an electrochemical mechanical processing apparatus |
PCT/US2006/039439 WO2007047215A2 (en) | 2005-10-14 | 2006-10-10 | Contact assembly cleaning in an electro-chemical mechanical processing apparatus |
TW095137592A TWI369421B (en) | 2005-10-14 | 2006-10-12 | Contact assembly cleaning in an electrochemical mechanical processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/251,581 US20070084729A1 (en) | 2005-10-14 | 2005-10-14 | Contact assembly cleaning in an electrochemical mechanical processing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070084729A1 true US20070084729A1 (en) | 2007-04-19 |
Family
ID=37947145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/251,581 Abandoned US20070084729A1 (en) | 2005-10-14 | 2005-10-14 | Contact assembly cleaning in an electrochemical mechanical processing apparatus |
Country Status (3)
Country | Link |
---|---|
US (1) | US20070084729A1 (en) |
TW (1) | TWI369421B (en) |
WO (1) | WO2007047215A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070096315A1 (en) * | 2005-11-01 | 2007-05-03 | Applied Materials, Inc. | Ball contact cover for copper loss reduction and spike reduction |
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US6197182B1 (en) * | 1999-07-07 | 2001-03-06 | Technic Inc. | Apparatus and method for plating wafers, substrates and other articles |
US20030173209A1 (en) * | 1998-12-07 | 2003-09-18 | Batz Robert W. | Contact assemblies, methods for making contact assemblies, and plating machines with contact assemblies for plating microelectronic workpieces |
US20050000801A1 (en) * | 2000-02-17 | 2005-01-06 | Yan Wang | Method and apparatus for electrochemical mechanical processing |
US6869516B2 (en) * | 2002-10-18 | 2005-03-22 | Applied Materials, Inc. | Method for removing electrolyte from electrical contacts and wafer touching areas |
US6958113B2 (en) * | 2002-12-19 | 2005-10-25 | Dainippon Screen Mfg. Co., Ltd. | Plating apparatus and plating method |
US7147765B2 (en) * | 2001-08-31 | 2006-12-12 | Semitool, Inc. | Apparatus and method for deposition of an electrophoretic emulsion |
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2005
- 2005-10-14 US US11/251,581 patent/US20070084729A1/en not_active Abandoned
-
2006
- 2006-10-10 WO PCT/US2006/039439 patent/WO2007047215A2/en active Application Filing
- 2006-10-12 TW TW095137592A patent/TWI369421B/en not_active IP Right Cessation
Patent Citations (6)
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US20030173209A1 (en) * | 1998-12-07 | 2003-09-18 | Batz Robert W. | Contact assemblies, methods for making contact assemblies, and plating machines with contact assemblies for plating microelectronic workpieces |
US6197182B1 (en) * | 1999-07-07 | 2001-03-06 | Technic Inc. | Apparatus and method for plating wafers, substrates and other articles |
US20050000801A1 (en) * | 2000-02-17 | 2005-01-06 | Yan Wang | Method and apparatus for electrochemical mechanical processing |
US7147765B2 (en) * | 2001-08-31 | 2006-12-12 | Semitool, Inc. | Apparatus and method for deposition of an electrophoretic emulsion |
US6869516B2 (en) * | 2002-10-18 | 2005-03-22 | Applied Materials, Inc. | Method for removing electrolyte from electrical contacts and wafer touching areas |
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Publication number | Priority date | Publication date | Assignee | Title |
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US20070096315A1 (en) * | 2005-11-01 | 2007-05-03 | Applied Materials, Inc. | Ball contact cover for copper loss reduction and spike reduction |
Also Published As
Publication number | Publication date |
---|---|
WO2007047215A3 (en) | 2007-12-13 |
TWI369421B (en) | 2012-08-01 |
TW200716796A (en) | 2007-05-01 |
WO2007047215A2 (en) | 2007-04-26 |
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Owner name: APPLIED MATERIALS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MANENS, ANTOINE P.;DUBOUST, ALAIN;BUTTERFIELD, PAUL D.;AND OTHERS;REEL/FRAME:016834/0289;SIGNING DATES FROM 20051121 TO 20051122 |
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STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |