US20070072376A1

US20070072376A1 - Strained-induced mobility enhancement nano-device structure and integrated process architecture for CMOS technologies

Info

Publication number: US20070072376A1
Application number: US11/244,955
Authority: US
Inventors: John Chen; Simon Yang
Original assignee: Semiconductor Manufacturing International Shanghai Corp
Current assignee: Semiconductor Manufacturing International Shanghai Corp
Priority date: 2005-09-29
Filing date: 2005-10-05
Publication date: 2007-03-29
Also published as: US9048300B2; CN1941329A; US20120164803A1; CN100442476C; US20130109142A1

Abstract

A CMOS semiconductor integrated circuit device. The CMOS device includes an NMOS device comprising a gate region, a source region, and a drain region and an NMOS channel region formed between the source region and drain region. A silicon carbide material is formed within the source region and formed within the drain region. The silicon carbide material causes the channel region to be in a tensile mode. The CMOS device also has a PMOS device comprising a gate region, a source region, and a drain region. The PMOS device has a PMOS channel region formed between the source region and the drain region. A silicon germanium material is formed within the source region and formed with in the drain region. The silicon germanium material causes the channel region to be in a compressive mode.

Description

BACKGROUND OF THE INVENTION

The present invention is directed to integrated circuits and their processing for the manufacture of semiconductor devices. More particularly, the invention provides a method and structures for manufacturing MOS devices using strained silicon structures for advanced CMOS integrated circuit devices. But it would be recognized that the invention has a much broader range of applicability.
Integrated circuits have evolved from a handful of interconnected devices fabricated on a single chip of silicon to millions of devices. Conventional integrated circuits provide performance and complexity far beyond what was originally imagined. In order to achieve improvements in complexity and circuit density (i.e., the number of devices capable of being packed onto a given chip area), the size of the smallest device feature, also known as the device “geometry”, has become smaller with each generation of integrated circuits.
Increasing circuit density has not only improved the complexity and performance of integrated circuits but has also provided lower cost parts to the consumer. An integrated circuit or chip fabrication facility can cost hundreds of millions, or even billions, of U.S. dollars. Each fabrication facility will have a certain throughput of wafers, and each wafer will have a certain number of integrated circuits on it. Therefore, by making the individual devices of an integrated circuit smaller, more devices may be fabricated on each wafer, thus increasing the output of the fabrication facility. Making devices smaller is very challenging, as each process used in integrated fabrication has a limit. That is to say, a given process typically only works down to a certain feature size, and then either the process or the device layout needs to be changed. Additionally, as devices require faster and faster designs, process limitations exist with certain conventional processes and materials.
An example of such a process is the manufacture of MOS devices themselves. Such device has traditionally became smaller and smaller and produced faster switching speeds. Although there have been significant improvements, such devices still have many limitations. As merely an example, these devices must become smaller and smaller but still provide clear signals for switching, which become more difficult as the device becomes smaller. That is, switching power becomes about the same order of magnitude as undesirable noise influences. Additionally, these devices are often difficult to manufacture and generally require complex manufacturing processes and structures. These and other limitations will be described in further detail throughout the present specification and more particularly below.
From the above, it is seen that an improved technique for processing semiconductor devices is desired.

BRIEF SUMMARY OF THE INVENTION

According to the present invention, techniques for processing integrated circuits for the manufacture of semiconductor devices are provided. More particularly, the invention provides a method and structures for manufacturing MOS devices using strained silicon structures for CMOS advanced integrated circuit devices. But it would be recognized that the invention has a much broader range of applicability.
In a specific embodiment, the present invention provides a method for forming a CMOS semiconductor integrated circuit devices. The method includes providing a semiconductor substrate, e.g., silicon wafer, silicon on insulator. The method includes forming a dielectric layer (e.g., gate oxide or nitride) overlying the semiconductor substrate and forming a gate layer (e.g., polysilicon, metal) overlying the dielectric layer. The method includes patterning the gate layer to form a gate structure including edges (e.g., a plurality of sides or edges) and forming a dielectric layer or multi-layers overlying the gate structure to protect the gate structure including the edges. The dielectric layer has a thickness of less than 100 nanometers. The method includes etching a source region and a drain region adjacent to the gate structure using the dielectric layer as a protective layer and depositing silicon germanium material into the source region and the drain region to fill the etched source region and the etched drain region. Preferably, the method causes a channel region between the source region and the drain region to be strained in compressive mode from at least the silicon germanium material formed in the source region and the drain region.
In an alternative specific embodiment, the invention provides a CMOS semiconductor integrated circuit device. The CMOS device includes an NMOS device comprising a gate region, a source region, and a drain region and an NMOS channel region formed between the source region and drain region. A silicon carbide material is formed within the source region and formed within the drain region. The silicon carbide material causes the channel region to be in a tensile mode. The CMOS device also has a PMOS device comprising a gate region, a source region, and a drain region. The PMOS device has a PMOS channel region formed between the source region and the drain region. A silicon germanium material is formed within the source region and formed with in the drain region. The silicon germanium material causes the channel region to be in a compressive mode.
In yet an alternative specific embodiment, the present invention provides a method for forming a CMOS integrated circuit device. The method includes providing a semiconductor substrate, e.g., silicon wafer, silicon on insulator. The method includes forming a gate layer overlying the semiconductor substrate and patterning the gate layer to form an NMOS gate structure including edges and a PMOS gate structure including edges. The method includes forming a dielectric layer overlying the NMOS gate structure to protect the NMOS gate structure including the edges and overlying the PMOS gate structure to protect the PMOS gate structure including the edges. Preferably, the method simultaneously etches a first source region and a first drain region adjacent to the NMOS gate structure and etches a second source region and a second drain region adjacent to the PMOS gate structure using the dielectric layer as a protective layer. The method deposits silicon germanium material into the first source region and the first drain region to cause a channel region between the first source region and the first drain region of the PMOS gate structure to be strained in a compressive mode. The method also deposits silicon carbide material into the second source region and second drain region to cause the channel region between the second source region and the second drain region of the NMOS gate structure to be strained in a tensile mode.
In yet an alternative specific embodiment, the present invention provides a PMOS integrated circuit device. The device has a semiconductor substrate comprising a surface region and an isolation region formed within the semiconductor substrate. A gate dielectric layer is formed overlying the surface region of the semiconductor substrate. A PMOS gate layer is formed overlying a portion of the surface region. The PMOS gate layer includes a first edge and a second edge. The device has a first lightly doped region formed within a vicinity of the first edge and a second lightly doped region formed within a vicinity of the second edge. The device also has a first sidewall spacer formed on the first edge and on a portion of the first lightly doped region and a second sidewall spacer formed on the second edge and on a portion of the second lightly doped region. A first etched region of semiconductor substrate is formed adjacent to the first sidewall spacer and a second etched region of semiconductor substrate is formed adjacent to the second sidewall spacer. The device has a first silicon germanium material formed within the first etched region to form a first source/drain region and a second silicon germanium material formed within the second etched region to form a second source/drain region. A PMOS channel region is formed between the first silicon germanium material and the second silicon germanium layer. Preferably, the first silicon germanium material comprises a first surface that has a height above the surface region and the second silicon germanium material comprises a second surface that has a height above the surface region. Preferably, the PMOS channel region exhibits a strained characteristic in compressive mode according to a specific embodiment.
Many benefits are achieved by way of the present invention over conventional techniques. For example, the present technique provides an easy to use process that relies upon conventional technology. In some embodiments, the method provides higher device yields in dies per wafer. Additionally, the method provides a process that is compatible with conventional process technology without substantial modifications to conventional equipment and processes. Preferably, the invention provides for an improved process integration for design rules of 90 nanometers and less. Additionally, the invention provides for increased mobility of holes using a strained silicon structure for CMOS devices. Depending upon the embodiment, one or more of these benefits may be achieved. These and other benefits will be described in more throughout the present specification and more particularly below.
Various additional objects, features and advantages of the present invention can be more fully appreciated with reference to the detailed description and accompanying drawings that follow.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified cross-sectional view diagram of a CMOS device according to an embodiment of the present invention.
FIG. 2 is a simplified flow diagram illustrating a method for fabricating a CMOS device according to an embodiment of the present invention.
FIGS. 3 through 6 are simplified cross-sectional view diagrams illustrating a method for fabricating a CMOS device according to an embodiment of the present invention.
FIG. 7 is a simplified cross-sectional view diagram of an alternative CMOS device according to an alternative embodiment of the present invention.
FIGS. 8-13 are simplified cross-sectional view diagrams illustrating an alternative method for fabricating a CMOS device according to an alternative embodiment of the present invention.
FIGS. 14-19 are simplified cross-sectional view diagrams illustrating yet an alternative method for fabricating a CMOS device according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

According to the present invention, techniques for processing integrated circuits for the manufacture of semiconductor devices are provided. More particularly, the invention provides a method and structures for manufacturing MOS devices using strained silicon structures for CMOS advanced integrated circuit devices. But it would be recognized that the invention has a much broader range of applicability.
FIG. 1 is a simplified cross-sectional view diagram of a CMOS device 100 according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize many variations, alternatives, and modifications. As shown, the CMOS device includes an NMOS device 107 comprising a gate region 109, a source region 111, a drain region 113 and an NMOS channel region 115 formed between the source region and drain region. Preferably, the channel region has width of less than 90 microns in a preferred embodiment. Of course, there can be other variations, modifications, and alternatives.
A silicon carbide material is formed within the source region 111 and is formed within the drain region 113. That is, the silicon carbide material is epitaxially grown within etched regions of the source and drain regions to form a multilayered structure. The silicon carbide material is preferably doped using an N type impurity. In a specific embodiment, the impurity is phosphorous and has a concentration ranging from about 1×10¹⁹to about 1×10²⁰atoms/cm³. The silicon carbide material causes the channel region to be in a tensile mode. The silicon carbide material has a lattice contact that is less than the lattice constant for single crystal silicon. Since the lattice constant is smaller for silicon carbide, it causes the NMOS channel region to be in a tensile mode. The channel region is longer than for single crystal silicon by about 0.7-0.8 percent in a specific embodiment. The NMOS device is formed in a P-type well region. Of course, there can be other variations, modifications, and alternatives.
The CMOS device also has a PMOS device 105 comprising a gate region 121, a source region 123, and a drain region 125. The PMOS device has a PMOS channel region 127 formed between the source region and the drain region. Preferably, the channel region has width of less than 90 microns in a preferred embodiment. The PMOS device is also formed in N-type well regions. The N-type well region is preferably doped using an N type impurity. Of course, there can be other variations, modifications, and alternatives.
A silicon germanium material is formed within the source region and formed with in the drain region. That is, the silicon germanium material is epitaxially grown within etched regions of the source and drain regions to form a multilayered structure. The silicon germanium material is preferably doped using a P type impurity. In a specific embodiment, the impurity is boron and has a concentration ranging from about 1×10¹⁹to about 1×10²⁰atoms/cm³. The silicon germanium material causes the channel region to be in a compressive mode. The silicon germanium material has a lattice contact that is larger than the lattice constant for single crystal silicon. Since the lattice constant is larger for silicon germanium, it tends to cause the PMOS channel region to be in a compressive mode. The channel region is shorter than for single crystal silicon by about 0.7-0.8 percent in a specific embodiment.
As further shown, the device has isolation regions 103, which are formed between active transistor devices, such as the MOS devices. The isolation regions are preferably made using shallow trench isolation techniques. Such techniques often use patterning, etching, and filling the trench with a dielectric material such as silicon dioxide or like material. Of course, one of ordinary skill in the art would recognize other variations, modifications, and alternatives. Further details of a method for fabricating the CMOS device can be found throughout the present specification and more particularly below.
Referring to FIG. 2 a method 200 for fabricating a CMOS integrated circuit device according to an embodiment of the present invention may be outlined as follows:
1. Provide a semiconductor substrate (step 201), e.g., silicon wafer, silicon on insulator;
2. Form shallow trench isolation regions (step 203);
3. Form a gate dielectric layer (step 205) overlying the surface of the substrate;
4. Form a gate layer overlying the semiconductor substrate;
5. Pattern the gate layer to form an NMOS gate structure including edges and pattern a PMOS gate structure including edges;
6. Form lightly doped drain regions and sidewall spacers (step 207) on edges of patterned gate layer;
7. Form a dielectric layer overlying the NMOS gate structure to protect the NMOS gate structure including the edges and overlying the PMOS gate structure to protect the PMOS gate structure including the edges;
8. Simultaneously etch a first source region and a first drain region adjacent to the NMOS gate structure and etch a second source region and a second drain region adjacent to the PMOS gate structure using the dielectric layer as a protective layer (step 209);
9. Pretreat etched source/drain regions;
10. Mask NMOS regions;
11. Deposit silicon germanium material into the first source region and the first drain region to cause a channel region between the first source region and the first drain region of the PMOS gate structure to be strained in a compressive mode (step 211);
12. Strip Mask from NMOS regions;
13. Mask PMOS regions;
14. Deposit silicon carbide material into the second source region and second drain region to cause the channel region between the second source region and the second drain region of the NMOS gate structure to be strained in a tensile mode (step 213);
15. Form silicide layer overlying gate layer and source/drain regions (step 215);
16. Form interlayer dielectric layer overlying NMOS and PMOS transistor devices (step 217);
17. Form contacts (step 219);
18. Perform back end processes (step 221); and
19. Perform other steps, as desired.
The above sequence of steps provides a method according to an embodiment of the present invention. As shown, the method uses a combination of steps including a way of forming a CMOS integrated circuit device. Other alternatives can also be provided where steps are added, one or more steps are removed, or one or more steps are provided in a different sequence without departing from the scope of the claims herein. Further details of the present method can be found throughout the present specification and more particularly below.
FIGS. 3-6 are simplified diagrams illustrating a method for fabricating a CMOS device according to an embodiment of the present invention. These diagrams are merely examples, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize many variations, alternatives, and modifications. As shown, the method provides a semiconductor substrate 301, e.g., silicon wafer, silicon on insulator. The semiconductor substrate is single crystalline silicon. The silicon has been oriented in the 100 direction on the face of the wafer. Of course, there can be other variations, modifications, and alternatives. Preferably, the method forms isolation regions within the substrate. In a specific embodiment, the method forms a shallow trench isolation region or regions 303 within a portion of the semiconductor substrate. The shallow trench isolation regions are formed using patterning, etching, and deposition of a dielectric fill material within the trench region. The dielectric fill material is often oxide or a combination of oxide and nitride depending upon the specific embodiment. The isolation regions are used to isolate active regions within the semiconductor substrate.
The method forms a gate dielectric layer 305 overlying the surface of the substrate. Preferably, the gate dielectric layer is oxide or silicon oxynitride depending upon the embodiment. The gate dielectric layer is preferably 10-20 nanometers and less depending upon the specific embodiment. The method forms a gate layer 307 overlying the semiconductor substrate. The gate layer is preferably polysilicon that has been doped using either in-situ doping or ex-situ implantation techniques. The impurity for doping is often boron, arsenic, or phosphrous having a concentration ranging from about 1×10¹⁹to about 1×10²⁰atoms/cm³. Of course, one of ordinary skill in the art would recognize many variations, modifications, and alternatives.
Referring to FIG. 4, the method patterns the gate layer to form an NMOS gate structure 401 including edges and patterns a PMOS gate structure 403 including edges. The method forms lightly doped drain regions 405 407 and optionally sidewall spacers on edges of patterned gate layer. Depending upon the embodiment, there may also be no sidewall spacers. The lightly doped drain regions are often formed using implantation techniques. For the PMOS device, the lightly doped drain region uses Boron or BF₂impurity having a concentration ranging from about 1×10¹⁸to about 1×10¹⁹atoms/cm³. For the NMOS device, the lightly doped drain region uses arsenic impurity having a concentration ranging from about 1×10¹⁸to about 1×10¹⁹atoms/cm³. The method forms a dielectric layer overlying the NMOS gate structure to protect the NMOS gate structure including the edges. The method also forms a dielectric protective layer overlying the PMOS gate structure to protect the PMOS gate structure including the edges. Preferably, the dielectric protective layer is the same layer for PMOS and NMOS devices. Alternatively, another suitable material can be used to protect the NMOS and PMOS gate structures, including lightly doped drain regions.
Referring to FIG. 5, the method simultaneously etches a first source region and a first drain region adjacent to the NMOS gate structure 501 and etches a second source region and a second drain region adjacent to the PMOS gate structure 503 using the dielectric layer as a protective layer. The method uses reactive ion etching techniques including a SF₆or CF₄bearing species and plasma environment. In a preferred embodiment, the method performs a pre-treatment process on etched source/drain regions. According to a specific embodiment, the each of the etched regions has a depth of ranging from about 100 Angstroms (A) to about
A and a length of about 0.1 um to about 10 um, and a width of about 0.1 um to about 10 um for a 90 nanometer channel length. Each of the etched regions has a depth of ranging from about 100 A to about 1,000 A and a length of about 0.1 um to about 10 um, and a width of about 0.1 um to about 10 um for a 65 nanometer channel length according to an alternative specific embodiment.
The method masks NMOS regions, while exposing the PMOS etched regions. The method deposits silicon germanium material into the first source region and the first drain region to cause a channel region between the first source region and the first drain region of the PMOS gate structure to be strained in a compressive mode. The silicon germanium is epitaxially deposited using in-situ doping techniques. That is, impurities such as boron are introduced while the silicon germanium material grows. A concentration ranges from about 1×10¹⁹to about 1×10²⁰atoms/cm³of boron according to a specific embodiment. Of course, there can be other variations, modifications, and alternatives.
The method strips the mask from NMOS regions. The method masks PMOS regions, while exposing the NMOS etched regions. The method deposits silicon carbide material into the second source region and second drain region to cause the NMOS channel region between the second source region and the second drain region of the NMOS gate structure to be strained in a tensile mode. The silicon carbide is epitaxially deposited using in-situ doping techniques. That is, impurities such as phosphorous (P) or arsenic (As) are introduced while the silicon carbide material grows. A concentration ranges from about 1×10¹⁹to about 1×10²⁰atoms/cm³of the above impurities according to a specific embodiment. Of course, there can be other variations, modifications, and alternatives.
To finish the device according to an embodiment of the present invention, the method forms a silicide layer 601 overlying gate layer and source/drain regions. Preferably, the silicide layer is a nickel bearing layer such as nickel silicide overlying the exposed source/drain regions and upper surface of the patterned gate layer. Other types of silicide layers can also be used. Such silicide layers include titanium silicide, tungsten silicide, nickel silicide, and the like. The method forms an interlayer dielectric layer overlying NMOS and PMOS transistor devices. The method then provides contact regions, CT. Other steps include performing a back end processes and other steps, as desired.
The above sequence of steps provides a method according to an embodiment of the present invention. As shown, the method uses a combination of steps including a way of forming a CMOS integrated circuit device. Other alternatives can also be provided where steps are added, one or more steps are removed, or one or more steps are provided in a different sequence without departing from the scope of the claims herein.
FIG. 7 is a simplified cross-sectional view diagram of an alternative CMOS device according to an alternative embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize many variations, alternatives, and modifications. As shown, the device is a PMOS integrated circuit device. Alternatively, the device may also be NMOS or the like. The device has a semiconductor substrate 701 (e.g., silicon, silicon on insulator) comprising a surface region and an isolation region 703 (e.g., trench isolation) formed within the semiconductor substrate. A gate dielectric layer 705 is formed overlying the surface region of the semiconductor substrate. A PMOS gate layer 707 is formed overlying a portion of the surface region. The gate layer is preferably doped polysilicon that has been crystallized according to a specific embodiment. The doping is often an impurity such as boron having a concentration ranging from about 1×10¹⁹to about 1×10²⁰depending upon the specific embodiment.
The PMOS gate layer includes a first edge 709 and a second edge 711. The device has a first lightly doped region 713 formed within a vicinity of the first edge and a second lightly doped region 715 formed within a vicinity of the second edge. The device also has a first sidewall spacer 721 formed on the first edge and on a portion of the first lightly doped region and a second sidewall spacer 723 formed on the second edge and on a portion of the second lightly doped region. A first etched region of semiconductor substrate is formed adjacent to the first sidewall spacer and a second etched region of semiconductor substrate is formed adjacent to the second sidewall spacer. The device has a first silicon germanium material 717 formed within the first etched region 716 to form a first source/drain region and a second silicon germanium 719 material formed within the second etched region 718 to form a second source/drain region. The silicon germanium layer has been grown using an epitaxial process. The silicon germanium is also doped using an impurity such as boron having a concentration ranging from about 1×10¹⁹to about 1×10²⁰depending upon the specific embodiment.
A PMOS channel region 720 is formed between the first silicon germanium material and the second silicon germanium layer. Preferably, the first silicon germanium material comprises a first surface 725 that has a height above the surface region and the second silicon germanium material comprises a second surface 727 that has a height above the surface region. The device has a silicide layer overlying gate layer and source/drain regions. Preferably, the silicide layer is a nickel bearing layer such as nickel silicide overlying the exposed source/drain regions and upper surface of the patterned gate layer, as shown. Of course, there can be other variations, modifications, and alternatives. Further details of the present device can be found throughout the present specification and more particularly below.
A method for fabricating a CMOS integrated circuit device according to an embodiment of the present invention may be outlined as follows:
1. Provide a semiconductor substrate, e.g., silicon wafer, silicon on insulator;
2. Form a dielectric layer (e.g., gate oxide or nitride) overlying the semiconductor substrate;
3. Form a gate layer (e.g., polysilicon, metal) overlying the dielectric layer;
4. Pattern the gate layer to form a gate structure including edges (e.g., a plurality of sides or edges);
5. Form a dielectric layer or multi-layers overlying the gate structure to protect the gate structure including the edges, wherein the dielectric layer being less than 1000 A;
6. Etch a source region and a drain region adjacent to the gate structure using the dielectric layer as a protective layer;
7. Deposit silicon germanium material into the source region and the drain region to fill the etched source region and the etched drain region;
8. Cause a channel region between the source region and the drain region to be strained in compressive mode from at least the silicon germanium material formed in the source region and the drain region, wherein the channel region is about the same width as the patterned gate layer;
9. Form sidewall spacers overlying the patterned gate layer; and
10. Perform other steps, as desired.
The above sequence of steps provides a method according to an embodiment of the present invention. As shown, the method uses a combination of steps including a way of forming a CMOS integrated circuit device. Other alternatives can also be provided where steps are added, one or more steps are removed, or one or more steps are provided in a different sequence without departing from the scope of the claims herein.
FIGS. 8-13 are simplified cross-sectional view diagrams illustrating an alternative method for fabricating a CMOS device according to an alternative embodiment of the present invention. These diagrams are merely examples, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize many variations, modifications, and alternatives.
A method illustrating an alternative method for fabricating a CMOS device according to an alternative embodiment of the present invention is briefly outlined below.
1. Provide semiconductor substrate including trench region (shallow trench isolation) 805, including PMOS 801 and NMOS 803 devices thereon (see, FIG. 8);
2. Form overlying oxide layer 807 and overlying silicon nitride layer 809;
3. Form masking layer 811 overlying NMOS devices;
4. Form spacer regions 901 on PMOS devices using masking layer 811 to protect NMOS devices, as illustrated by FIG. 9;
5. Form etched source/drain regions 903 for PMOS devices using the masking layer to product the NMOS devices;
6. Remove masking layer, as illustrated by FIG. 10;
7. Deposit silicon germanium fill material 1101 into the etched source/drain region, as illustrated by FIG. 10, to cause strain region within the channel region of the PMOS devices;
8. Form spacer regions 1105 for NMOS devices, as illustrated by FIG. 11;
9. Form silicide material 1201 (e.g., nickel, platinum, titanium) overlying portions of the NMOS and PMOS gate regions, as illustrated by FIG. 12;
10. Form silicon nitride layer 1203 overlying surface regions of the spacer regions, NMOS, and PMOS devices;
11. Cause strain region within NMOS devices using the silicon nitride layer, as illustrated by FIG. 12;
12. Form interlayer dielectric layer or layers overlying the NMOS and PMOS devices;
13. Form contact regions 1301 to source/drain regions of each of the NMOS and PMOS devices; and
14. Perform other steps, as desired.
The above sequence of steps provides a method according to an embodiment of the present invention. As shown, the method uses a combination of steps including a way of forming a CMOS integrated circuit device. Other alternatives can also be provided where steps are added, one or more steps are removed, or one or more steps are provided in a different sequence without departing from the scope of the claims herein.
FIGS. 14-19 are simplified cross-sectional view diagrams illustrating yet an alternative method for fabricating a CMOS device according to an embodiment of the present invention. These diagrams are merely examples, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize many variations, modifications, and alternatives.
A method illustrating an alternative method for fabricating a CMOS device according to an alternative embodiment of the present invention is briefly outlined below.
1. Provide semiconductor substrate including trench region (shallow trench isolation), including PMOS and NMOS devices thereon (see, FIG. 14);
2. Form overlying oxide layer and overlying silicon nitride layer, as also shown in FIG. 14;
3. Form masking layer 1511 overlying NMOS devices;
4. Form spacer regions 1501 on PMOS devices using masking layer 1511 to protect NMOS devices, as illustrated by FIG. 15;
5. Form etched source/drain regions for PMOS devices using the masking layer to product the NMOS devices;
6. Remove masking layer;
7. Deposit silicon germanium fill material 1503 into the etched source/drain region, as illustrated by FIG. 15, to cause strain region within the channel region of the PMOS devices;
8. Form silicon nitride layer overlying the NMOS and PMOS devices, including a portion of the silicon nitride layer and the oxide layer overlying the NMOS devices, as illustrated by FIG. 16;
9. Form mask 1701 overlying PMOS devices, as illustrated by FIG. 17;
10. Form spacer regions 1703 for NMOS devices, as illustrated by FIG. 17;
11. Form etched source/drain regions 1705 for NMOS devices;
12. Form silicon carbide fill material 1801 within the etched source/drain regions to cause strain region (e.g., tensile) within the channel region of the NMOS devices;
13. Optionally, form silicide material (e.g., nickel, platinum, titanium) overlying portions of the NMOS and PMOS gate regions, as illustrated by FIG. 18;
14. Form silicon nitride layer 1901 overlying surface regions of the spacer regions, NMOS, and PMOS devices, as illustrated by FIG. 19;
15. Cause additional strain (e.g., tensile) to the strain region within NMOS devices using the silicon nitride layer;
16. Form interlayer dielectric layer or layers overlying the NMOS and PMOS devices;
17. Form contact regions to source/drain regions of each of the NMOS and PMOS devices; and
18. Perform other steps, as desired.
The above sequence of steps provides a method according to an embodiment of the present invention. As shown, the method uses a combination of steps including a way of forming a CMOS integrated circuit device. Other alternatives can also be provided where steps are added, one or more steps are removed, or one or more steps are provided in a different sequence without departing from the scope of the claims herein.

Depending upon the embodiment, there can be various recipes for forming nigh tensile or high compressive stress silicon nitride material depending upon the application. As merely an example, Table 1 lists certain recipes for high tensile (HT) and high compressive (HC) silicon nitride.

DEP CONDITIONS FOR HIGH TENSILE

AND HIGH COMPRESSIVE STRESS SIN

	Parameters	HT SIN	HC SIN

Max Time/s	100	67
Servo/Torr	6	6
HF RF Pwr/W	40	450
SiH4-Lo/sccm	30	30
NH3/sccm	80	80
N2/sccm	9000	9000
Htr ½(wafer˜)/T	400	400
Lift Pos/mils	480	480
Stress/THK = 2K	948	−1483

Of course, one of ordinary skill in the art would recognize various modifications, alternatives, and variations.
It is also understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes in light thereof will be suggested to persons skilled in the art and are to be included within the spirit and purview of this application and scope of the appended claims.

Claims

1. A method for forming a CMOS semiconductor integrated circuit device comprising:

providing a semiconductor substrate

forming a dielectric layer overlying the semiconductor substrate;

forming a gate layer overlying the dielectric layer;

patterning the gate layer to form a gate structure including edges;

forming a dielectric layer overlying the gate structure to protect the gate structure including the edges, the dielectric layer having a thickness of less than 1000 A nanometers;

patterning the dielectric layer overlying the gate structure;

etching a source region and a drain region adjacent to the gate structure using the patterned dielectric layer as a protective layer;

depositing silicon germanium material into the source region and the drain region to fill the etched source region and the etched drain region; and

causing a channel region between the source region and the drain region to be strained in compressive mode from at least the silicon germanium material formed in the source region and the drain region.

2. The method of claim 1 wherein the dielectric layer is less than 300 Angstroms.

3. The method of claim 1 wherein the effective channel region has a length of a width of the gate structure.

4. The method of claim 1 wherein the semiconductor substrate is essential silicon material.

5. The method of claim 1 wherein the silicon germanium material is single crystalline.

6. The method of claim 1 wherein the silicon germanium has a ratio of silicon/germanium of 10% to 20%.

7. The method of claim 1 further comprising forming a spacer layer overlying the semiconductor substrate including silicon germanium, gate structure, and edges.

8. The method of claim 7 further comprising anisotropic etching the spacer layer to form sidewall spacers on edges of the gate layer.

9. The method of claim 1 wherein the depositing is provided using an epitaxial reactor.

10. The method of claim 1 wherein the compressive mode increases a mobility of holes in the channel region.

11. A CMOS semiconductor integrated circuit device, the device comprising:

an NMOS device comprising a gate region, a source region, and a drain region;

an NMOS channel region formed between the source region and drain region;

a silicon carbide material formed within the source region and formed within the drain region;

whereupon the silicon carbide material causes the channel region to be in a tensile mode; and

a PMOS device comprising a gate region, a source region, and a drain region;

a PMOS channel region formed between the source region and the drain region;

a silicon germanium formed within the source region and formed with in the drain region; and

whereupon the silicon germanium material causes the channel region to be in a compressive mode.

12. The device of claim 11 wherein the semiconductor substrate is essentially silicon material.

13. The device of claim 11 wherein the NMOS channel region has a length of less than 90 nanometers.

14. The device of claim 11 wherein the PMOS channel region has a length of less than 90 nanometers.

15. The device of claim 11 wherein the silicon carbide material is single crystal material.

16. The device of claim II wherein the silicon germanium material is single crystal material.

17. The device of claim 11 wherein the NMOS channel region has a length that. is substantially equal to a width of the gate region of the NMOS device.

18. The device of claim 17 wherein the length is exactly equal to the width of the gate region.

19. The device of claim 11 wherein the PMOS channel region has a length that is substantially equal as a width of the gate region of the PMOS device.

20. The device of claim 19 wherein the length is exactly equal to the width of the gate region.

21. A method for forming a CMOS integrated circuit device, the method comprising:

providing a semiconductor substrate;

forming a gate layer overlying the semiconductor substrate;

patterning the gate layer to form an NMOS gate structure including edges and a PMOS gate structure including edges;

forming a dielectric layer overlying the NMOS gate structure to protect the NMOS gate structure including the edges and overlying the PMOS gate structure to protect the PMOS gate structure including the edges;

simultaneously etching a first source region and a first drain region adjacent to the NMOS gate structure and second source region and second drain region adjacent to the PMOS gate structure using the dielectric layer as a protective layer;

depositing silicon germanium material into the first source region and the first drain region to cause a channel region between the first source region and the first drain region of the NMOS gate structure to be strained in a compressive mode;

depositing silicon carbide material into the second source region and second drain region to cause the channel region between the second source region and the second drain region of the PMOS gate structure to be strained in a tensile mode.

22. The method of claim 21 wherein the tensile mode increases an electron mobility.

23. The method of claim 21 wherein the compressive mode increases a hole mobility.

24. The method of claim 21 wherein the channel region of the PMOS device has a length of 90 nanometers and less.

25. The method of claim 21 wherein the channel region of the NMOS device has a length of 90 nanometers and less.

26. The method of claim 21 wherein the silicon germanium material is an epitaxial material.

27. The method of claim 21 wherein the silicon carbide material is an epitaxial material.

28. The method of claim 21 wherein the silicon germanium material has a thickness ranging from about 200 Angstroms to 1000 Angstroms.

29. The method of claim 21 wherein the silicon carbide material has a thickness ranging from about 200 Angstroms to 1000 Angstroms.

30. The method of claim 21 further comprising forming sidewall spacers on the edges of the NMOS gate structure and the edges of the PMOS gate structure.

31. The method of claim 21 wherein the depositing the silicon germanium material is an in-situ doped process using a boron species, the boron species having a concentration ranging from about 10¹⁹to 10²⁰atoms/cm³.

32. The method of claim 21 wherein the depositing the silicon carbide material is an in-situ doped process using a phosphorus species, the phosphorus species having a concentration ranging from about 10¹⁹to 10²⁰atoms/cm³.

33. The method of claim 21 further comprising forming a refractory metal layer overlying the first source region and first drain region and the second source region and the second drain region.

34. The method of claim 21 wherein the first source region is an elevated first source region and the first drain region is an elevated first drain region; the second source region is an elevated second source region and the second drain region is an elevated second drain region.

35. A PMOS integrated circuit device, the device comprising:

a semiconductor substrate comprising a surface region;

an isolation region formed within the semiconductor substrate;

a gate dielectric layer overlying the surface region of the semiconductor substrate;

a PMOS gate layer, the PMOS gate layer including a first edge and a second edge;

a first lightly doped region formed within a vicinity of the first edge;

a second lightly doped region formed within a vicinity of the second edge;

a first sidewall spacer formed on the first edge and on a portion of the first lightly doped region;

a second sidewall spacer formed on the second edge and on a portion of the second lightly doped region;

a first etched region of semiconductor substrate formed adjacent to the first sidewall spacer;

a second etched region of semiconductor substrate formed adjacent to the second sidewall spacer;

a first silicon germanium material formed within the first etched region to form a first source/drain region;

a second silicon germanium material formed within the second etched region to form a second source/drain region; and

a PMOS channel region formed between the first silicon germanium material and the second silicon germanium layer.

36. The device of claim 35 wherein the first silicon germanium material comprises a first surface that has a height above the surface region and the second silicon germanium material comprises a second surface that has a height above the surface region.