US20060269676A1 - Photoresist coating composition and method for forming fine contact of semiconductor device - Google Patents
Photoresist coating composition and method for forming fine contact of semiconductor device Download PDFInfo
- Publication number
- US20060269676A1 US20060269676A1 US11/296,826 US29682605A US2006269676A1 US 20060269676 A1 US20060269676 A1 US 20060269676A1 US 29682605 A US29682605 A US 29682605A US 2006269676 A1 US2006269676 A1 US 2006269676A1
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- US
- United States
- Prior art keywords
- coating
- contact
- composition
- photoresist pattern
- coating composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09D133/08—Homopolymers or copolymers of acrylic acid esters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
A coating composition containing a coating base resin and a C4-C10 alcohol as a main solvent, and a method for forming a fine contact of a semiconductor device including the steps of preparing the coating composition, forming a photoresist film on a semiconductor substrate having an underlying layer, performing exposure with a contact mask and developing processes to form a photoresist pattern for contact on the photoresist film, and coating the coating composition on the photoresist pattern to form a coating film.
Description
- 1. Field of the Disclosure
- The disclosure relates to a coating composition and a method for forming a fine contact of a semiconductor device using the same.
- 2. Description of the Related Technology
- In order to overcome the resolution limit of exposures in forming a fine contact of a semiconductor device, a phase shift mask is typically used or a contact is heated at above the glass transition temperature of the photoresist to cause flow (known as a resist flow process, as described in U.S. Pat. No. 6,824,951, the disclosure of which is incorporated herein by reference). Otherwise, a RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink process, as described in “Resists Join the Sub-λ Revolution”, Semiconductor International, 1999. 9., Laura J. Peters ed., the disclosure of which is incorporated herein by reference,) process is performed to reduce the size of the contact, thereby obtaining a fine contact suitable for a high degree of integration of semiconductor devices.
- However, when the phase shift mask is used, a side-lobe is generated or the resolution is degraded during the process for forming a pattern.
- In the resist flow process, even when the same thermal energy is transmitted to the entire surface of the photoresist at over the glass transition temperature, the flowing amount of the photoresist is larger in the lower portion than in the upper or middle portion so as to cause an over-flow, with the space between the upper portion of the patterns is wider than the space between the lower portion of the patterns.
- In the RELACS process, materials are expensive, and water-soluble polymers are not completely removed but remain on the pattern to affect subsequent etching processes. As a result, it is possible to generate defects in manufactured devices, thereby decreasing yield and reliability of devices.
- Moreover, when a coating process is performed on the contact, the size of the formed contact can be smaller than the original one of the contact. However, since water is used as a solvent, coating properties may be degraded.
- Although an organic solvent can be used to improve the coating properties, the organic solvent dissolves a lower photoresist layer. In order to prevent the lower photoresist layer from being dissolved by the organic solvent, the coating composition should be cross-linked after the contact is formed. For this cross-linking, an additional process such as electronic beam curing, thermal curing, or ultraviolet curing is required.
- A coating composition contains a coating base resin and a C4-C10 alcohol as a main solvent, and a method for forming a fine contact sufficient for high integration of a semiconductor device including performing a coating process on a contact using the coating composition.
- For a more complete understanding of the invention, reference should be made to the following detailed description and accompanying drawings wherein:
-
FIGS. 1 a and 1 b are cross-sectional diagram illustrating a method according to the disclosure for forming a fine contact of a semiconductor device; -
FIG. 2 is a SEM photograph illustrating a photoresist pattern for contact obtained from a Comparative Example; -
FIG. 3 is a SEM photograph illustrating a photoresist pattern for contact obtained from Example 4; and -
FIG. 4 is a SEM photograph illustrating a photoresist pattern for contact obtained from Example 5. - The disclosed coating composition contains a coating base resin and C4-C10 alcohol as a main solvent.
- The C4-C10 alcohol is preferably a compound selected from the group consisting of cyclopentanol, cycloheptanol, butanol, pentanol, hexanol, octanol, nonanol, decanol, and mixtures thereof. The alcohol solvent dissolves the lower photoresist layer when the carbon number is less than four, and the volatility of the solvent is so small to be used as a coating solvent when the number of carbon is more than ten.
- The coating composition includes a coating base resin, and the coating base resin is preferably, but not necessarily, an acrylic resin. Herein the term “acrylic resin” means the resin produced essentially by polymerization of acrylic acid, methacrylic acid and derivatives thereof. A preferred example of acrylic resin is poly(t-butylacrylate/methacrylic acid/methacrylate).
- The disclosure also provides a method for forming a fine contact of a semiconductor device.
- The method includes the steps of:
-
- (a) preparing a coating composition according to the disclosure;
- (b) forming a photoresist film on a semiconductor substrate having an underlying layer;
- (c) performing exposure with a contact mask and a developing process to form a photoresist pattern for contact on the photoresist film; and
- (d) coating the coating composition on the photoresist pattern to form a coating film.
- Preferably, the method further includes the step of performing a resist flow process or the step of performing a RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink) process onto the photoresist pattern after step (b) and before step (c) in order to form a fine contact having a smaller contact region.
- The disclosure will be described in detail with
FIGS. 1 a and 1 b. - Referring to
FIG. 1 a, a photoresist composition is coated on asemiconductor substrate 11 having an underlying layer to form a photoresist film. - Next, a
photoresist film 13 containing acontact region 15 is formed by an exposure and developing process with a contact mask (not shown). - The
contact region 15 is formed to have a diameter (a). - Referring to
FIG. 1 b, a coating composition is coated on the entire surface including thecontact region 15 to form acoating film 17 having a thickness ranging from 20 nm to 100 nm. - The coating composition obtained by dissolving acrylic resin as a base resin in C4-C10 alcohol as a main solvent is applied by simple spin-coating to form a
coating film 17 by volatilization of the alcohol. The additional process such as the curing process is not required since the C4-C10 alcohol does not dissolve the lower photoresist layer. - As a result, the
coating film 17 reduces a diameter of thecontact region 15 into the size (b). - The diameter of the
contact region 15 can be adjusted depending on the thickness of thecoating film 17. - As described above, the size of the
contact region 15 is changed by regulation of the thickness of the disclosedcoating film 17, and the thickness of thecoating film 17 can be regulated as intended to improve reproducibility of the process and minimize characteristic change of devices, thereby facilitating high-integration of semiconductor devices. - Before the
coating film 17 is formed, thephotoresist pattern 13 can be heated at over a glass transition temperature of photoresist to cause flow or a RELACS process can be performed, forming the diameter of thecontact region 15 to be smaller than (a) in advance, and then thecoating film 17 is formed. As a result, the diameter of the contact region can be regulated to be even smaller. - The disclosure will be described in details by referring to examples below, which are given to illustrate not to limit the disclosed coating compounds and method.
- To acetone (50 g) were dissolved t-butylacrylate (5.0 g), methacrylic acid (2.0 g), methacrylate (3.0 g) and AIBN (2,2′-azobisisobutyronitrile) (0.02 g) as a polymerization initiator, and then the resulting mixture was polymerized at about 67° C. for about 6 hours. After polymerization is completed, the resulting mixture was filtered and vacuum dried to obtain poly(t-butylacrylate/methacrylic acid/methacrylate) (yield: 88%).
- The poly(t-butylacrylate/methacrylic acid/methacrylate) (1 g) obtained from Example 1 was dissolved in cycloheptanol (80 g) to obtain a coating composition.
- The poly(t-butylacrylate/methacrylic acid/methacrylate) (1 g) obtained from Example 1 was dissolved in cyclopentanol (70 g) to obtain a disclosed coating composition.
- An ArF photoresist composition 7039R (produced by TOK Co.) was coated on a silicon wafer, and soft-baked at about 120° C. for about 90 seconds. After soft-baking, the photoresist film was exposed to light using an ArF laser Scanner XT:1400E (ASML Inc.), and post-baked at about 120° C. for about 90 seconds. After post-baking, it was developed in 2.38 wt % tetramethylammonium hydroxide (TMAH) aqueous solution for about 40 seconds, to obtain a 134 nm photoresist pattern for contact (see
FIG. 2 ). - The coating composition obtained from Example 2 was spin-coated on the 134 nm photoresist pattern for contact shown in
FIG. 2 by the same procedure of Comparative Example to obtain a 105 nm photoresist pattern (seeFIG. 3 ). - That is, by forming the coating film with cycloheptanol as the alcohol solvent having the number of carbon of over 4, the obtained photoresist pattern for contact was smaller by 29 nm than the photoresist pattern for contact obtained from Comparative Example where the coating film was not formed.
- The coating composition obtained from Example 3 was spin-coated on the 134 nm photoresist pattern for contact shown in
FIG. 2 by the same procedure of Comparative Example to obtain a 98 nm photoresist pattern (seeFIG. 4 ). - That is, by forming the coating film with cyclopentanol as the alcohol solvent having the number of carbon of over 4, the obtained photoresist pattern for contact was smaller by 36 nm than the photoresist pattern for contact obtained from Comparative Example where the coating film was not formed.
- As described above, in order to obtain a fine contact, a contact is first formed, and a coating composition using a C4-C10 alcohol as a main solvent for coating composition is coated thereon to form a coating film. As a result, the photoresist pattern for contact having a smaller contact region can be obtained rather than when the coating film is not formed.
Claims (10)
1. A coating composition comprising a coating base resin and a C4-C10 alcohol as a main solvent.
2. A composition of claim 1 , wherein the C4-C10 alcohol is present in an amount ranging from about 400 g to 4000 g based on 100 g of the coating base resin.
3. A composition of claim 1 , wherein the coating base resin is an acrylic resin.
4. A composition of claim 3 , wherein the acrylic resin is poly(t-butylacrylate/methacrylic acid/methacrylate).
5. A composition of to claim 1 , wherein the C4-C10 alcohol is a compound selected from the group consisting of cyclopentanol, cycloheptanol, butanol, pentanol, hexanol, octanol, nonanol, decanol, and mixtures thereof.
6. A composition according to claim 1 , wherein the composition consists essentially of a coating base resin and a C4-C10 alcohol as a main solvent
7. A method for forming a fine contact of a semiconductor device, comprising the steps of:
(a) providing a coating composition according to claim 1;
(b) forming a photoresist film on a semiconductor substrate having an underlying layer;
(c) performing exposure with a contact mask and a developing process to form a photoresist pattern for contact on the photoresist film; and
(d) coating the coating composition on the photoresist pattern to form a coating film.
8. The method of claim 7 , further comprising the step of performing a resist flow process onto the photoresist pattern after step (b) and before step (c).
9. The method of claim 7 , further comprising the step of performing a RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink) process onto the photoresist pattern after step (b) and before step (c).
10. The method of claim 7 , comprising forming the coating film to a thickness in the range of 20 nm to 100 nm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/772,578 US8133547B2 (en) | 2005-05-30 | 2007-07-02 | Photoresist coating composition and method for forming fine contact of semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050045481A KR100732289B1 (en) | 2005-05-30 | 2005-05-30 | Method for Forming Submicron Contact of Semiconductor Device |
KR10-2005-0045481 | 2005-05-30 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/772,578 Continuation-In-Part US8133547B2 (en) | 2005-05-30 | 2007-07-02 | Photoresist coating composition and method for forming fine contact of semiconductor device |
Publications (1)
Publication Number | Publication Date |
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US20060269676A1 true US20060269676A1 (en) | 2006-11-30 |
Family
ID=37463729
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/296,826 Abandoned US20060269676A1 (en) | 2005-05-30 | 2005-12-07 | Photoresist coating composition and method for forming fine contact of semiconductor device |
US11/772,578 Expired - Fee Related US8133547B2 (en) | 2005-05-30 | 2007-07-02 | Photoresist coating composition and method for forming fine contact of semiconductor device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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US11/772,578 Expired - Fee Related US8133547B2 (en) | 2005-05-30 | 2007-07-02 | Photoresist coating composition and method for forming fine contact of semiconductor device |
Country Status (2)
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US (2) | US20060269676A1 (en) |
KR (1) | KR100732289B1 (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8852851B2 (en) | 2006-07-10 | 2014-10-07 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
US7989307B2 (en) | 2008-05-05 | 2011-08-02 | Micron Technology, Inc. | Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same |
US10151981B2 (en) | 2008-05-22 | 2018-12-11 | Micron Technology, Inc. | Methods of forming structures supported by semiconductor substrates |
US8409457B2 (en) * | 2008-08-29 | 2013-04-02 | Micron Technology, Inc. | Methods of forming a photoresist-comprising pattern on a substrate |
US8039399B2 (en) * | 2008-10-09 | 2011-10-18 | Micron Technology, Inc. | Methods of forming patterns utilizing lithography and spacers |
US8247302B2 (en) | 2008-12-04 | 2012-08-21 | Micron Technology, Inc. | Methods of fabricating substrates |
US8273634B2 (en) * | 2008-12-04 | 2012-09-25 | Micron Technology, Inc. | Methods of fabricating substrates |
US8796155B2 (en) * | 2008-12-04 | 2014-08-05 | Micron Technology, Inc. | Methods of fabricating substrates |
US8268543B2 (en) | 2009-03-23 | 2012-09-18 | Micron Technology, Inc. | Methods of forming patterns on substrates |
US9330934B2 (en) * | 2009-05-18 | 2016-05-03 | Micron Technology, Inc. | Methods of forming patterns on substrates |
JP5573356B2 (en) * | 2009-05-26 | 2014-08-20 | 信越化学工業株式会社 | Resist material and pattern forming method |
US20110129991A1 (en) * | 2009-12-02 | 2011-06-02 | Kyle Armstrong | Methods Of Patterning Materials, And Methods Of Forming Memory Cells |
US8518788B2 (en) | 2010-08-11 | 2013-08-27 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US8455341B2 (en) | 2010-09-02 | 2013-06-04 | Micron Technology, Inc. | Methods of forming features of integrated circuitry |
JP5621735B2 (en) * | 2010-09-03 | 2014-11-12 | 信越化学工業株式会社 | Pattern forming method and chemically amplified positive resist material |
US8575032B2 (en) | 2011-05-05 | 2013-11-05 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
US9076680B2 (en) | 2011-10-18 | 2015-07-07 | Micron Technology, Inc. | Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array |
TWI473205B (en) * | 2011-11-24 | 2015-02-11 | Powerchip Technology Corp | Method for forming contact hole |
US9177794B2 (en) | 2012-01-13 | 2015-11-03 | Micron Technology, Inc. | Methods of patterning substrates |
US8629048B1 (en) | 2012-07-06 | 2014-01-14 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
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US4856857A (en) * | 1985-05-07 | 1989-08-15 | Dai Nippon Insatsu Kabushiki Kaisha | Transparent reflection-type |
US5242780A (en) * | 1991-10-18 | 1993-09-07 | Industrial Technology Research Institute | Electrophoretic positive working photosensitive composition comprising as the photosensitive ingredient an aliphatic polyester having o-quinone diazide on the side chain and end groups |
US20020160297A1 (en) * | 2001-02-23 | 2002-10-31 | Fedynyshyn Theodore H. | Low abosorbing resists for 157 nm lithography |
US20030099897A1 (en) * | 2000-02-25 | 2003-05-29 | Mass Institute Of Technology (Mit) | Surface modified encapsulated inorganic resist |
US6824951B2 (en) * | 2000-10-23 | 2004-11-30 | Hynix Semiconductor Inc. | Photoresist composition for resist flow process |
US20050250898A1 (en) * | 2004-03-31 | 2005-11-10 | Central Glass Company, Limited | Top coat composition |
US20050277050A1 (en) * | 2004-06-15 | 2005-12-15 | Hiroshi Yamazaki | Image forming method |
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TW329539B (en) * | 1996-07-05 | 1998-04-11 | Mitsubishi Electric Corp | The semiconductor device and its manufacturing method |
KR100445317B1 (en) | 1999-02-24 | 2004-08-18 | 조창제 | Thermal motion electron rectfier and method for converting thermal energy into electric energy by using the same |
KR100330969B1 (en) * | 1999-12-31 | 2002-04-01 | 황인길 | Method for incarnating fineness hole size using taper a thin film |
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JP3850767B2 (en) * | 2002-07-25 | 2006-11-29 | 富士通株式会社 | Resist pattern thickening material, resist pattern and manufacturing method thereof, and semiconductor device and manufacturing method thereof |
US7064846B1 (en) * | 2003-08-22 | 2006-06-20 | Advanced Micro Devices, Inc. | Non-lithographic shrink techniques for improving line edge roughness and using imperfect (but simpler) BARCs |
US7343666B2 (en) * | 2004-06-30 | 2008-03-18 | Hitachi Global Storage Technologies Netherlands B.V. | Methods of making magnetic write heads with use of linewidth shrinkage techniques |
KR100682184B1 (en) * | 2004-12-28 | 2007-02-12 | 주식회사 하이닉스반도체 | Composition for Photoresist Pattern Shrinkage |
KR100680426B1 (en) * | 2004-12-30 | 2007-02-08 | 주식회사 하이닉스반도체 | Water-Soluble Composition for Coating Photoresist Pattern and Method for forming Fine Pattern Using the Same |
-
2005
- 2005-05-30 KR KR1020050045481A patent/KR100732289B1/en not_active IP Right Cessation
- 2005-12-07 US US11/296,826 patent/US20060269676A1/en not_active Abandoned
-
2007
- 2007-07-02 US US11/772,578 patent/US8133547B2/en not_active Expired - Fee Related
Patent Citations (7)
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US4856857A (en) * | 1985-05-07 | 1989-08-15 | Dai Nippon Insatsu Kabushiki Kaisha | Transparent reflection-type |
US5242780A (en) * | 1991-10-18 | 1993-09-07 | Industrial Technology Research Institute | Electrophoretic positive working photosensitive composition comprising as the photosensitive ingredient an aliphatic polyester having o-quinone diazide on the side chain and end groups |
US20030099897A1 (en) * | 2000-02-25 | 2003-05-29 | Mass Institute Of Technology (Mit) | Surface modified encapsulated inorganic resist |
US6824951B2 (en) * | 2000-10-23 | 2004-11-30 | Hynix Semiconductor Inc. | Photoresist composition for resist flow process |
US20020160297A1 (en) * | 2001-02-23 | 2002-10-31 | Fedynyshyn Theodore H. | Low abosorbing resists for 157 nm lithography |
US20050250898A1 (en) * | 2004-03-31 | 2005-11-10 | Central Glass Company, Limited | Top coat composition |
US20050277050A1 (en) * | 2004-06-15 | 2005-12-15 | Hiroshi Yamazaki | Image forming method |
Also Published As
Publication number | Publication date |
---|---|
US20080032243A1 (en) | 2008-02-07 |
KR100732289B1 (en) | 2007-06-25 |
KR20060123862A (en) | 2006-12-05 |
US8133547B2 (en) | 2012-03-13 |
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AS | Assignment |
Owner name: HYNIX SEMICONDUCTOR INC., KOREA, REPUBLIC OF Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:JUNG, JAE CHANG;REEL/FRAME:017340/0311 Effective date: 20051201 |
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STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |