US20060194518A1 - Methods for planarization of Group VIII metal-containing surfaces using a fixed abrasive article - Google Patents
Methods for planarization of Group VIII metal-containing surfaces using a fixed abrasive article Download PDFInfo
- Publication number
- US20060194518A1 US20060194518A1 US11/398,903 US39890306A US2006194518A1 US 20060194518 A1 US20060194518 A1 US 20060194518A1 US 39890306 A US39890306 A US 39890306A US 2006194518 A1 US2006194518 A1 US 2006194518A1
- Authority
- US
- United States
- Prior art keywords
- platinum
- group viii
- fixed abrasive
- viii metal
- abrasive article
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12944—Ni-base component
Abstract
A planarization method includes providing a Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a fixed abrasive article in the presence of a planarization composition, wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.
Description
- The present invention relates to methods for planarization of Group VIII metal-containing (preferably, platinum-containing) surfaces, particularly in the fabrication of semiconductor devices.
- During fabrication of semiconductor devices, various surfaces are formed. Many of such surfaces do not have uniform height, and therefore, the wafer thickness is also non-uniform. Further, surfaces may have defects such as crystal lattice damage, scratches, roughness, or embedded particles of dirt or dust. For various fabrication processes to be performed, such as lithography and etching, height non-uniformities and defects at the surface of the wafer must be reduced or eliminated. Various planarization techniques are available to provide such reduction and/or elimination. One such planarization technique includes mechanical and/or chemical-mechanical polishing (abbreviated herein as “CMP”).
- The process of planarization is used to remove material, and preferably achieve a planar surface, over the entire chip and wafer, sometimes referred to as “global planarity.” Conventionally, the process of planarization, and particularly CMP, involves the use of a wafer carrier that holds a wafer, a polishing pad, and an abrasive slurry that includes a dispersion of a plurality of abrasive particles in a liquid. The abrasive slurry is applied so that it contacts the interface of the wafer and the polishing pad. A table or platen has a polishing pad thereon. The polishing pad is applied to the wafer at a certain pressure to perform the planarization. At least one of the wafer and a polishing pad are set in motion relative to the other. In some planarization processes, the wafer carrier may or may not rotate, the table or platen may or may not rotate and/or the platen may be moved in a linear motion as opposed to rotating. There are numerous types of planarization units available which perform the process in different manners.
- The use of abrasive slurries in wafer fabrication has proven problematic for several reasons. First, abrasive slurries that contain a plurality of abrasive particles in a dispersion tend to be unstable. In particular, not only do the abrasive particles settle, the abrasive particles also tend to agglomerate, both phenomenon resulting in a nonuniform slurry composition. This, in turn, creates wide variability in the polishing results. Second, it is known within the art that the composition of the slurry tends to be very specific with the desired planarization process, i.e., one slurry may not be suitable for a variety of processes.
- Also, conventional polishing pads pose planarization difficulties. Such pads may glaze, or become embedded with debris, during planarizing. This requires the pads to be conditioned such that the pads can be reused. Conditioning typically involves removal of the debris from the polishing pad using mechanical means with or without application of a solution. Conditioned pads typically lead to subsequent unpredictable planarization results because of the unpredictability in removal of debris from the pad itself during conditioning.
- Fixed abrasive articles used in place of conventional polishing pads are also known and used in planarization processes. Such fixed abrasive articles include a plurality of abrasive particles dispersed within a binder adhered to at least one surface of a backing material. For certain situations, fixed abrasive articles are advantageous; however, conventional abrasive slurries are typically incompatible with fixed abrasive articles for many planarization processes.
- The planarization of a surface that includes platinum and other Group VIII metals typically involves more mechanical than chemical action during a polishing process because they are relatively chemically inert and/or have relatively few volatile produces. Such mechanical polishing uses alumina and silica particles. Unfortunately, mechanical polishing tends to cause the formation of defects (e.g., scratches and particles), both of which can be detected optically, rather than the clean removal of the platinum.
- Thus, there is still a need for methods for planarizing an exposed surface of a substrate that includes platinum and other Group VIII metals, particularly in the fabrication of semiconductor devices.
- The present invention provides methods that overcome many of the problems associated with the planarization of a surface that includes platinum and/or another of the Group VIII second and third row metals (i.e.,
Groups 8, 9, and 10, preferably, Rh, Ru, Ir, Pd, and Pt). Such a surface is referred to herein as a platinum-containing surface, or more generally, a Group VIII metal-containing surface. A “Group VIII metal-containing surface” refers to an exposed region having a Group VIII metal (particularly, platinum) preferably present in an amount of at least about 10 atomic percent, more preferably at least about 20 atomic percent, and most preferably at least about 50 atomic percent, of the composition of the region, which may be provided as a layer, film, coating, etc., to be planarized (e.g., via chemical-mechanical or mechanical planarization or polishing) in accordance with the present invention. The surface preferably includes (and more preferably, consists essentially of) one or more Group VIII metals in elemental form or an alloy thereof (with each other and/or one or more other metals of the Periodic Table). That is, the surface does not include significant amounts of nonmetals such as silicon or oxygen atoms, as occur in a silicide or oxide. - The methods of the present invention involve planarizing a surface. Herein, as is conventionally understood, “planarizing” or “planarization” refers to the removal of material from a surface, whether it be a large or small amount of material, either mechanically, chemically, or both. This also includes removing material by polishing. As used herein, “chemical-mechanical polishing” and “CMP” refer to a dual mechanism having both a chemical component and a mechanical component, wherein corrosion chemistry and fracture mechanics both play a roll in the removal of material, as in wafer polishing.
- In one aspect of the present invention, a planarization method is provided that includes: positioning a Group VIII metal-containing surface of a substrate (preferably, a semiconductor substrate or substrate assembly such as a wafer) to interface with a fixed abrasive article; supplying a planarization composition in proximity to the interface; and planarizing the Group VIII metal-containing surface using the fixed abrasive article. The Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof. The fixed abrasive article includes a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.
- In another aspect of the present invention, a planarization method is provided that includes: providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface (preferably, a surface having a nonplanar topography); providing a fixed abrasive article; providing a planarization composition (preferably, including an oxidizing agent and/or a complexing agent, more preferably, an oxidizing agent) at an interface between the at least one region of platinum-containing surface and the fixed abrasive article; and planarizing the at least one region of platinum-containing surface with the fixed abrasive article; wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.
- As used herein, “semiconductor substrate or substrate assembly” refers to a semiconductor substrate such as a base semiconductor layer or a semiconductor substrate having one or more layers, structures, or regions formed thereon. A base semiconductor layer is typically the lowest layer of silicon material on a wafer or a silicon layer deposited on another material, such as silicon on sapphire. When reference is made to a substrate assembly, various process steps may have been previously used to form or define regions, junctions, various structures or features, and openings such as vias, contact openings, high aspect ratio openings, conductive regions, contact regions, etc. For example, a substrate assembly may refer to a structure upon which a metallization is to be performed, e.g., metal lines are formed for electrical interconnection functionality.
- Yet another aspect of the present invention provides a planarization method for use in forming a capacitor or barrier layer. Preferably, the method includes: providing a wafer having a patterned dielectric layer formed thereon and a Group VIII metal-containing layer formed over the patterned dielectric layer, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof; positioning a first portion of a fixed abrasive article for contact with the platinum-containing layer; providing a planarization composition in proximity to the contact between the fixed abrasive and the Group VIII metal-containing layer; and planarizing the platinum-containing layer with the fixed abrasive article; wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.
- In any of the methods in accordance with the present invention, the fixed abrasive article preferably includes a plurality of abrasive particles such as CeO2 particles, Y2O3 particles, Fe2O3 particles, or mixtures thereof. More preferably, a majority of the plurality of abrasive particles are CeO2 abrasive particles.
- In any of the methods in accordance with the present invention, the planarization composition does not typically include abrasive particles. Alternatively, and preferably, the planarization composition includes an oxidizing agent, a complexing agent, or mixtures thereof.
-
FIGS. 1A and 1B are cross-sectional illustrations of one portion of a wafer before and after a planarization process has been performed in accordance with the present invention; -
FIGS. 2A and 2B are cross-sectional illustrations of one portion of a wafer before and after a planarization process has been performed in accordance with the present invention; -
FIG. 3 is a general diagrammatical illustration of a chemical-mechanical polishing system utilized in accordance with the present invention; -
FIG. 4 is an enlarged cross-sectional view taken across line A-A ofFIG. 3 ; and -
FIG. 5 is a schematic of one operation of a process in accordance with the present invention. - The present invention provides methods of planarization of a surface that includes platinum and/or one or more of the other second or third row Group VIII metals. The Group VIII metals are also referred to as the Group VIIIB elements or transition metals of
Groups 8, 9, and 10 of the Periodic Table. The second and third row Group VIIIB metals include Rh, Ru, Ir, Pd, Pt, and Os. Preferably, surfaces that include Rh, Ru, Ir, Pd, and/or Pt can be planarized according to methods of the present invention. Such a surface is referred to herein as a Group VIII metal-containing surface (this refers to those containing second and/or third row transition metals). - Preferably, a “Group VIII metal-containing surface” refers to an exposed region having a Group VIII metal (particularly, platinum) present in an amount of at least about 10 atomic percent, more preferably at least about 20 atomic percent, and most preferably at least about 50 atomic percent, of the composition of the region, which may be provided as a layer, film, coating, etc., to be planarized (e.g., via chemical-mechanical or mechanical planarization or polishing) in accordance with the present invention.
- The planarization of such surfaces, particularly a surface that includes platinum, typically involves mechanical methods with relatively hard particles such as alumina (Al2O3) and silica (SiO2) particles, which can cause smearing and the formation of defects rather than the clean removal of the material. Surprisingly, the use of a fixed abrasive article that includes abrasive particles having a hardness of no greater than about 6.5 Mohs reduces, and often eliminates, the problems of smearing and defect formation. Such particles include, for example, ceria (CeO2), which has a hardness of about 6.0 Mohs, as well as yttrium oxide (Y2O3), which has a hardness of about 5.5 Mohs, and ferric oxide (Fe2O3), which has a hardness of about 6.0 Mohs. This is in contrast to alumina abrasive particles, which have a hardness ranging from about 8.5 Mohs to about 9.0 Mohs, and silica abrasive particles, which have a hardness ranging from about 7.5 Mohs.
- Fixed abrasive articles that include a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs can be used with or without a planarization composition, and thus, in a variety of planarization processes, including mechanical or chemical-mechanical. In any of the methods in accordance with the present invention, the fixed abrasive preferably includes a plurality of CeO2 particles, Y2O3, Fe2O3, or mixtures thereof. More preferably, a majority of the plurality of abrasive particles are CeO2 particles.
- Typically, the abrasive particles range in particle size (i.e., the largest dimension of the particle) on average from about 10 nanometers (nm) to about 5000 nm, and more often about 30 nm to about 1000 nm. For preferred embodiments, suitable abrasive particles have an average particle size of about 100 nm to about 300 nm.
- Significantly, the methods of the present invention are particularly advantageous in planarizing a surface that includes a “nonplanar” (i.e., “nonflat”) topography, i.e., a surface that includes regions of greater height than other regions of the surface. Examples of surfaces that have a nonplanar topography include those that have undulating layers or those with structures such as in capacitors. Typically, “nonplanar” (i.e., “nonflat”) surfaces have regions that are at least about 200 Angstroms higher, preferably, at least about 500 Angstroms higher, and more preferably, at least about 2000 Angstroms higher, than other regions of the surface. The fixed abrasive articles used in the methods of the present invention contribute to a higher rate of removal of material from surfaces having a nonplanar topography when compared to surfaces that are planar or flat (e.g., a blanket layer in a semiconductor substrate assembly, or other surfaces having regions that are less than about 200 Angstroms in height differential). Preferably, the rate of removal of material from a surface that has a nonplanar topography is at least about 10 times, and often as much as about 25 times, that of the rate of removal of material from a generally planar or flat surface.
- Significantly, the methods of the present invention are particularly advantageous in removing platinum or other Group VIII metals from a surface in preference to other materials, particularly silicon dioxide. This is important in selectively removing material from platinum-containing or other Group VIII metal-containing layers without removing, for example, significant amounts of underlying layers, such as oxide layers (e.g., TEOS or BPSG layers). Preferably, the selectivity for removal of material from a Group VIII metal-containing surface having a nonplanar topography, wherein the Group VIII metal is in elemental form (including alloys), relative to material from a dielectric layer (e.g., silicon dioxide, silicon nitride, BPSG) is within a range of about 10:1 to about 25:1, depending on the chemistry and process conditions. This selectivity ratio can be increased even further with the use of planarization compositions including one or more oxidizing agents and or complexing agents, for example. By comparison, the selectivity for removal of material from a Group VIII metal-containing planar (i.e., flat) surface relative to material from an oxide-containing surface is about 1:1, using the same fixed abrasive article and process conditions.
- For enhancing selectivity, a planarization composition is preferably used in the methods of the present invention. Preferably, a suitable composition includes an oxidizing agent and/or complexing agent (more preferablyk an oxidizing agent) to aid in the planarization, as well as other additives such as a surfactant to enhance wettability and reduce friction, a thickener to achieve a desired viscosity, a buffering agent to achieve a desired pH, etc. Preferably, the composition is an aqueous solution of these components. More preferably, the planarization composition has a pH of about 1.5 to about 3. Preferred oxidizing agents (i.e., oxidants) include, for example, ceric ammonium nitrate, ceric ammonium sulfate, etc. Examples of suitable planarization compositions are disclosed in Applicant's Assignee's copending U.S. patent applications Ser. No. ______, filed on even date herewith entitled METHODS FOR PLANARIZATION OF GROUP VIII METAL-CONTAINING SURFACES USING OXIDIZING AGENTS (Atty. Docket No. 150.01050101); Ser. No. ______, filed on even date herewith entitled METHODS FOR PLANARIZATION OF GROUP VIII METAL-CONTAINING SURFACES USING COMPLEXING AGENTS (Atty. Docket No. 150.01140101); and Ser. No. ______, filed on even date herewith entitled METHODS FOR PLANARIZATION OF GROUP VIII METAL-CONTAINING SURFACES USING OXIDIZING GASES (Atty. Docket No. 150.01110101).
- It is to be understood that a planarization composition suitable for use in the methods of the present invention is preferably essentially free of abrasive particles when supplied to the interface of the fixed abrasive article and the workpiece surface. However, it is contemplated that planarization is accomplished by one or both of the fixed abrasive article and/or abrasive particles that may be removed from the fixed abrasive article at the fixed abrasive/surface interface in combination with the planarization composition. In any event, abrasive particles are typically not present in the composition as initially applied, i.e., they are not supplied from a source external to the polishing interface.
- A suitable fixed abrasive for use in the present invention is known, such as that described in U.S. Pat. No. 5,692,950 (Rutherford, et al.) and International Patent Publication WO 98/06541. In general, a fixed abrasive includes a plurality of abrasive particles dispersed within a binder that forms a three-dimensional fixed abrasive element that is adhered to one surface of a backing material. Commercially available fixed abrasive articles can be obtained from Tokyo Sumitsu Kageki and Ebera Corporation, both of Japan, and Minnesota Mining and Manufacturing Company (3M Company) of St. Paul, Minn. An example of a preferred fixed abrasive article is a ceria-based pad commercially available from 3M Company under the trade designation “SWR 159.”
- The figures provide further information about the methods of the invention.
FIG. 1A illustrates one portion of awafer 10 prior to planarization in accordance with the present invention having features that are filled with the material to be removed through planarization. Thewafer portion 10 includes asubstrate assembly 12 havingjunctions 16 formed thereon. A capacitor and/orbarrier layer material 19 is then formed over thesubstrate assembly 12 and thejunctions 16. The a capacitor and/orbarrier layer material 19 may be any conductive material such as platinum or any other suitable conductive second or third row Group VIII metal-containing capacitor and/or barrier material. Generally, as shown inFIG. 1A , the nonplanarupper surface 13 of capacitor and/orbarrier layer 19 is subjected to planarization or other processing in accordance with the present invention. The resultingwafer 10, which is shown inFIG. 1B , includes anupper surface 17 planarized such that the thickness of thewafer 10 is substantially uniform across theentire wafer 10 so that the wafer now includes a capacitor and/or barrier structure layer. -
FIG. 2B illustrates one portion of awafer 20 prior to planarization in accordance with the present invention having features that have a conformal layer of the material to be removed through planarization. Thewafer portion 20 includes asubstrate assembly 22 having a patterneddielectric layer 26 formed thereon. Such a patterneddielectric layer 26 can be used in a variety of structures, particularly a capacitor structure. The patterneddielectric layer 26 can be formed of any material that provides electrical isolation between metal regions (e.g., silicon dioxide, silicon nitride, or BPSG). Anelectrode layer 29 is then formed over thesubstrate assembly 22 and the patterneddielectric layer 26. Theelectrode layer 29 may be platinum or any other suitable conductive second or third row Group VIIIB or Group IB metal-containing material. Generally, as shown inFIG. 2A , the nonplanarupper surface 23 ofelectrode layer 29 is subjected to planarization or other processing in accordance with the present invention. The resultingwafer 20, as shown inFIG. 2B , includes anupper surface 27 planarized such that the thickness of thewafer 20 is substantially uniform across theentire wafer 20 so that the wafer now includes electrically conductingregions 24 isolated within the patterneddielectric material 26 forming a capacitor structure. If desired, prior to planarization, theconformal layer 29 andopenings 24 can be covered with a photoresist or other material that is removed after the planarization so the abrasive does not fall into theopenings 24. - One generally illustrated
planarization assembly 100, as shown inFIG. 3 , includes a revolvingwafer carrier platform 135 that holdswafer 102 of which wafer portion 10 (shown inFIGS. 1A and 1B ) is a part thereof. A planarization composition is typcially introduced at or near the interface between the fixedabrasive article 142 and thewafer 102. A fixedabrasive article 142 is then supplied between aplaten 110 and thewafer 102. - As shown in
FIG. 3 , the fixedabrasive article 142 may be supplied in a continuous manner, wherein asupply roll 120 feeds an elongated fixedabrasive article 142 to a polishing interface between theplaten 110 and thewafer 102. After the polishing life of a portion of the fixedabrasive article 142 has been exhausted, the fixedabrasive article 142 can be advanced and is wound up on a take-up roll 123. Alternatively, a fixed abrasive article of a defined size may be attached to theplaten 110 for use in a discrete manner, i.e., not continuous. - Optionally, a station (not shown) may be provided that can serve to pre-wet the fixed abrasive article prior to planarization or it can serve to flush the fixed abrasive article between the planarization of different wafers. The fixed
abrasive article 142 can be advanced to the station, located in close proximity to arotating drum 122 a, and a solution provided to the station and applied, such as by drip, spray, or other dispensing means, to the fixed abrasive surface that will ultimately contact the wafer. More preferably, the solution is an aqueous solution and, even more preferably, the solution is water or a planarization composition in accordance with the present invention. After application of the solution, the fixedabrasive article 142 is then positioned to contact the surface of the wafer for planarization. - The fixed
abrasive article 142 contacts a surface of the wafer 102 (e.g., thesurface 13 ofwafer 10 as depicted inFIG. 1A ) in the presence of a planarization composition during the planarization process. Pressure can be applied, typically by a downward force applied to acarrier arm 139 affixed theholder 132, although a backside pressure can be applied from aplaten 110 is contemplated by the present invention. Preferably, a method in accordance with the present invention is conducted at atmospheric pressure and at a temperature in a range from about 4° C. to about 62° C. In one embodiment, both awafer holder 132 and/or theplaten 110 can be revolved and moved by motors or drive means (not shown) as is readily known to those skilled in the art. -
Wafer holder 132 revolveswafer 102 at a selected velocity in a circular direction indicated by arrow “R” and moveswafer 102 under controlled pressure across a portion of the fixedabrasive article 142. Thewafer 102 contacts the fixedabrasive article 142 as it is moved. The area of the fixedabrasive article 142 which comes into contact with the surface of thewafer 102 varies as thewafer 102 is moved as is known to those skilled in the art. For example, the fixedabrasive article 142 can be moved a distance that is less than a maximum diameter of a wafer such that a subsequently polished wafer is exposed to a second position on the fixed abrasive. Preferably, the second position on the fixed abrasive includes at least a portion that was not utilized to polish the wafer immediately preceding it. Thus, all or a portion of the second position on the fixed abrasive can include a portion that was not utilized to polish the wafer immediately preceding it. One suitable distance that the fixedabrasive article 142 can be moved is less than about 1.0% of the maximum diameter of the wafer. Thus, for a wafer having a maximum diameter of about 8 inches (about 20.3 cm), a distance that the fixedabrasive article 142 can be moved is about 0.25 inch (about 0.64 cm). Another suitable distance that the fixedabrasive article 142 can be moved is a distance substantially equal to the maximum diameter of the wafer. - A supply system (not shown) introduces a planarization composition atop the fixed
abrasive article 142, preferably at or near the interface or contact area between the surface of thewafer 102 and the fixedabrasive article 142 at a specified flow rate. The planarization composition may be introduced at various locations about the fixed abrasive. For example, the planarization composition may be introduced from above the fixedabrasive article 142, such as by drip, spray, or other dispensing means. - As shown in
FIG. 4 , taken across line A-A inFIG. 3 , the composition may be introduced at or near the wafer/fixed abrasive article interface by supplying the composition to a dispensing mechanism directly incorporated in thewafer holder 132 of thewafer carrier platform 135. A plurality ofsupply ports 160 are arranged around the periphery of thewafer holder 132 through which the composition can be dispensed. The composition can be dispensed through all or a few of the supply ports at any given time during the planarization process. As shown inFIG. 4 , one preferred arrangement of the plurality ofsupply ports 160 is about the circumference of awafer attachment portion 102′ of thewafer holder 132, although other arrangements are possible. - The
wafer holder 132 is preferably revolved at a speed of about 200-600 millimeters per second. As shown inFIG. 5 , thewafer holder 132 preferably revolves in a path designated by arrow “C” in contact with theplaten 110 including the fixedabrasive article 142. The speed of thewafer holder 132 is then related to the length of “C.” The surface of thewafer 102 is held in juxtaposition relative to the fixedabrasive article 142 so that the fixedabrasive article 142 can planarize the surface. - Although the foregoing has been described with particular attention to a revolving wafer holder, it is to be understood that for planarization both the wafer holder and the platen can move relative to one another. For example, the wafer holder can revolve/rotate and the platen can revolve or orbit. Further, either the wafer holder or the platen can be stationary.
- The foregoing detailed description has been given for clarity of understanding only. No unnecessary limitations are to be understood therefrom. The invention is not limited to the exact details shown and described, for variations obvious to one skilled in the art will be included within the invention defined by the claims. For example, while the description above focused on planarization of semiconductor-based substrates, the compositions and methods of the invention are also applicable to, for example, polishing glasses and contact lenses, as one of many other possible applications. The complete disclosures of all patents, patent documents, and publications listed herein are incorporated by reference, as if each were individually incorporated by reference.
Claims (38)
1. A planarization method comprising:
positioning a Group VIII metal-containing surface of a substrate to interface with a fixed abrasive article, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
supplying a planarization composition in proximity to the interface; and
planarizing the substrate surface with the fixed abrasive article;
wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.
2. The method of claim 1 wherein the Group VIII metal-containing surface of the substrate has a nonplanar topography.
3. The method of claim 1 wherein the Group VIII metal-containing surface of the substrate comprises a Group VIII metal in elemental form or an alloy thereof.
4. The method of claim 3 wherein the Group VIII metal-containing surface comprises elemental platinum.
5. The method of claim 3 wherein the Group VIII metal-containing surface comprises a platinum alloy.
6. The method of claim 1 wherein the Group VIII metal is present in an amount of about 10 atomic percent or more.
7. The method of claim 6 wherein the Group VIII metal is present in an amount of about 20 atomic percent or more.
8. The method of claim 7 wherein the Group VIII metal is present in an amount of about 50 atomic percent or more.
9. The method of claim 1 wherein the substrate is a wafer.
10. The method of claim 1 wherein the plurality of abrasive particles comprise CeO2, Y2O3, Fe2O3, or mixtures thereof.
11. The method of claim 10 wherein a majority of the plurality of abrasive particles are CeO2 abrasive particles.
12. The method of claim 1 wherein the planarization composition comprises an oxidizing agent, a complexing agent, or mixtures thereof.
13. The method of claim 1 wherein the Group VIII metal-containing surface is removed relative to a dielectric layer at a selectivity ratio of at least about 10:1.
14. A planarization method comprising:
providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface;
providing a fixed abrasive article;
providing a planarization composition at an interface between the at least one region of platinum-containing surface and the fixed abrasive article; and
planarizing the at least one region of platinum-containing surface with the fixed abrasive article;
wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.
15. The method of claim 14 wherein the platinum-containing surface has a nonplanar topography.
16. The method of claim 14 wherein the platinum is present in an amount of about 10 atomic percent or more.
17. The method of claim 14 wherein the platinum-containing surface comprises elemental platinum.
18. The method of claim 14 wherein the platinum-containing surface comprises a platinum alloy.
19. The method of claim 14 wherein the substrate assembly is a wafer.
20. The method of claim 14 wherein the plurality of abrasive particles comprise CeO2, Y2O3, Fe2O3, or mixtures thereof.
21. The method of claim 20 wherein a majority of the plurality of abrasive particles are CeO2 abrasive particles.
22. The method of claim 14 wherein the planarization composition comprises an oxidizing agent, a complexing agent, or mixtures thereof.
23. The method of claim 14 wherein the Group VIII metal-containing surface is removed relative to an oxide layer at a selectivity ratio of at least about 10:1.
24. A planarization method comprising:
providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface having a nonplanar topography;
providing a fixed abrasive article;
providing a planarization composition at an interface between the at least one region of platinum-containing surface and the fixed abrasive article; and
planarizing the at least one region of platinum-containing surface with the fixed abrasive article;
wherein the fixed abrasive article comprises a plurality of abrasive particles selected from the group of CeO2, Y2O3, Fe2O3, and combinations thereof.
25. A planarization method comprising:
providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface having a nonplanar topography;
providing a fixed abrasive article;
providing a planarization composition at an interface between the at least one region of platinum-containing surface and the fixed abrasive article; and
planarizing the at least one region of platinum-containing surface with the fixed abrasive article;
wherein the fixed abrasive article comprises a plurality of CeO2 abrasive particles.
26. A planarization method comprising:
providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface having a nonplanar topography;
providing a fixed abrasive article;
providing a planarization composition comprising an oxidizing agent, a complexing agent, or a combination thereof at an interface between the at least one region of platinum-containing surface and the fixed abrasive article; and
planarizing the at least one region of platinum-containing surface with the fixed abrasive article;
wherein the fixed abrasive article comprises a plurality of CeO2 abrasive particles.
27. A planarization method for use in forming a capacitor or barrier layer:
providing a wafer having a patterned dielectric layer formed thereon and a Group VIII metal-containing layer formed over the patterned dielectric layer, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
positioning a first portion of a fixed abrasive article for contact with the platinum-containing layer;
providing a planarization composition in proximity to the contact between the fixed abrasive and the Group VIII metal-containing layer; and
planarizing the platinum-containing layer with the fixed abrasive article;
wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.
28. The method of claim 27 wherein the Group VIII metal-containing surface of the substrate comprises a Group VIII metal in elemental form or an alloy thereof.
29. The method of claim 28 wherein the Group VIII metal-containing surface comprises elemental platinum.
30. The method of claim 27 wherein the Group VIII metal-containing surface comprises a platinum alloy.
31. The method of claim 27 wherein the Group VIII metal is present in an amount of about 10 atomic percent or more.
32. The method of claim 31 wherein the Group VIII metal is present in an amount of about 20 atomic percent or more.
33. The method of claim 32 wherein the Group VIII metal is present in an amount of about 50 atomic percent or more.
34. The method of claim 27 wherein the substrate is a wafer.
35. The method of claim 27 wherein the plurality of abrasive particles comprise CeO2, Y2O3, Fe2O3, or mixtures thereof.
36. The method of claim 35 wherein a majority of the plurality of abrasive particles are CeO2 abrasive particles.
37. The method of claim 27 wherein the planarization composition comprises an oxidizing agent, a complexing agent, or mixtures thereof.
38. The method of claim 27 wherein the Group VIII metal-containing surface is removed relative to an oxide layer at a selectivity ratio of at least about 10:1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/398,903 US20060194518A1 (en) | 2001-12-21 | 2006-04-06 | Methods for planarization of Group VIII metal-containing surfaces using a fixed abrasive article |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/028,616 US7121926B2 (en) | 2001-12-21 | 2001-12-21 | Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article |
US11/398,903 US20060194518A1 (en) | 2001-12-21 | 2006-04-06 | Methods for planarization of Group VIII metal-containing surfaces using a fixed abrasive article |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/028,616 Continuation US7121926B2 (en) | 2001-12-21 | 2001-12-21 | Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article |
Publications (1)
Publication Number | Publication Date |
---|---|
US20060194518A1 true US20060194518A1 (en) | 2006-08-31 |
Family
ID=21844443
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/028,616 Expired - Lifetime US7121926B2 (en) | 2001-12-21 | 2001-12-21 | Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article |
US11/398,903 Abandoned US20060194518A1 (en) | 2001-12-21 | 2006-04-06 | Methods for planarization of Group VIII metal-containing surfaces using a fixed abrasive article |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/028,616 Expired - Lifetime US7121926B2 (en) | 2001-12-21 | 2001-12-21 | Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article |
Country Status (10)
Country | Link |
---|---|
US (2) | US7121926B2 (en) |
EP (1) | EP1458520B1 (en) |
JP (1) | JP2005514798A (en) |
KR (1) | KR100667391B1 (en) |
CN (1) | CN100408267C (en) |
AT (1) | ATE353735T1 (en) |
AU (1) | AU2002351393A1 (en) |
DE (1) | DE60218218T2 (en) |
TW (1) | TWI237853B (en) |
WO (1) | WO2003059571A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050148182A1 (en) * | 2001-12-21 | 2005-07-07 | Micron Technology, Inc. | Compositions for planarization of metal-containing surfaces using halogens and halide salts |
US20060183334A1 (en) * | 2001-12-21 | 2006-08-17 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using oxidizing gases |
US20060261040A1 (en) * | 2001-12-21 | 2006-11-23 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using oxidizing agents |
US20120255635A1 (en) * | 2011-04-11 | 2012-10-11 | Applied Materials, Inc. | Method and apparatus for refurbishing gas distribution plate surfaces |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7067111B1 (en) * | 1999-10-25 | 2006-06-27 | Board Of Regents, University Of Texas System | Ethylenedicysteine (EC)-drug conjugates, compositions and methods for tissue specific disease imaging |
CA2410906C (en) * | 2000-06-02 | 2012-10-02 | Board Of Regents, The University Of Texas System | Ethylenedicysteine (ec)-drug conjugates |
US7121926B2 (en) | 2001-12-21 | 2006-10-17 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article |
US6884723B2 (en) * | 2001-12-21 | 2005-04-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using complexing agents |
US6967166B2 (en) * | 2002-04-12 | 2005-11-22 | Asm Nutool, Inc. | Method for monitoring and controlling force applied on workpiece surface during electrochemical mechanical processing |
JP4238097B2 (en) * | 2003-09-04 | 2009-03-11 | Tdk株式会社 | Coil parts manufacturing method |
US9050378B2 (en) * | 2003-12-10 | 2015-06-09 | Board Of Regents, The University Of Texas System | N2S2 chelate-targeting ligand conjugates |
US7161247B2 (en) | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
US8758723B2 (en) * | 2006-04-19 | 2014-06-24 | The Board Of Regents Of The University Of Texas System | Compositions and methods for cellular imaging and therapy |
US10925977B2 (en) | 2006-10-05 | 2021-02-23 | Ceil>Point, LLC | Efficient synthesis of chelators for nuclear imaging and radiotherapy: compositions and applications |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
US6069080A (en) * | 1992-08-19 | 2000-05-30 | Rodel Holdings, Inc. | Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like |
US6177026B1 (en) * | 1998-05-26 | 2001-01-23 | Cabot Microelectronics Corporation | CMP slurry containing a solid catalyst |
US20020004360A1 (en) * | 2000-06-01 | 2002-01-10 | Katsuhiro Ota | Polishing slurry |
US6395194B1 (en) * | 1998-12-18 | 2002-05-28 | Intersurface Dynamics Inc. | Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same |
US6509273B1 (en) * | 1999-04-28 | 2003-01-21 | Hitachi, Ltd. | Method for manufacturing a semiconductor device |
US20060183334A1 (en) * | 2001-12-21 | 2006-08-17 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using oxidizing gases |
US7121926B2 (en) * | 2001-12-21 | 2006-10-17 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article |
US20060261040A1 (en) * | 2001-12-21 | 2006-11-23 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using oxidizing agents |
Family Cites Families (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5177404A (en) | 1974-12-26 | 1976-07-05 | Fuji Photo Film Co Ltd | |
US4035500A (en) | 1976-06-04 | 1977-07-12 | Western Electric Company, Inc. | Method of depositing a metal on a surface of a substrate |
US4670306A (en) | 1983-09-15 | 1987-06-02 | Seleco, Inc. | Method for treatment of surfaces for electroless plating |
US4747907A (en) | 1986-10-29 | 1988-05-31 | International Business Machines Corporation | Metal etching process with etch rate enhancement |
US4992137A (en) | 1990-07-18 | 1991-02-12 | Micron Technology, Inc. | Dry etching method and method for prevention of low temperature post etch deposit |
US5981454A (en) | 1993-06-21 | 1999-11-09 | Ekc Technology, Inc. | Post clean treatment composition comprising an organic acid and hydroxylamine |
US5254217A (en) | 1992-07-27 | 1993-10-19 | Motorola, Inc. | Method for fabricating a semiconductor device having a conductive metal oxide |
JP3143812B2 (en) | 1992-10-12 | 2001-03-07 | 賢藏 益子 | Latent fingerprint detection method |
GB9226434D0 (en) | 1992-12-18 | 1993-02-10 | Johnson Matthey Plc | Catalyst |
US5380401A (en) | 1993-01-14 | 1995-01-10 | Micron Technology, Inc. | Method to remove fluorine residues from bond pads |
US5392189A (en) | 1993-04-02 | 1995-02-21 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same |
US5318927A (en) | 1993-04-29 | 1994-06-07 | Micron Semiconductor, Inc. | Methods of chemical-mechanical polishing insulating inorganic metal oxide materials |
US5575885A (en) | 1993-12-14 | 1996-11-19 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing semiconductor device |
US5695384A (en) | 1994-12-07 | 1997-12-09 | Texas Instruments Incorporated | Chemical-mechanical polishing salt slurry |
US5958794A (en) | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
US5700383A (en) | 1995-12-21 | 1997-12-23 | Intel Corporation | Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide |
US5711851A (en) | 1996-07-12 | 1998-01-27 | Micron Technology, Inc. | Process for improving the performance of a temperature-sensitive etch process |
US5692950A (en) | 1996-08-08 | 1997-12-02 | Minnesota Mining And Manufacturing Company | Abrasive construction for semiconductor wafer modification |
US5888906A (en) | 1996-09-16 | 1999-03-30 | Micron Technology, Inc. | Plasmaless dry contact cleaning method using interhalogen compounds |
US5958288A (en) | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
US5954997A (en) | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US6045716A (en) | 1997-03-12 | 2000-04-04 | Strasbaugh | Chemical mechanical polishing apparatus and method |
US5916855A (en) | 1997-03-26 | 1999-06-29 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films |
US6211034B1 (en) | 1997-04-14 | 2001-04-03 | Texas Instruments Incorporated | Metal patterning with adhesive hardmask layer |
KR100230422B1 (en) | 1997-04-25 | 1999-11-15 | 윤종용 | Method for manufacturing a capacitor in semiconductor device |
US6149828A (en) | 1997-05-05 | 2000-11-21 | Micron Technology, Inc. | Supercritical etching compositions and method of using same |
US5935871A (en) | 1997-08-22 | 1999-08-10 | Motorola, Inc. | Process for forming a semiconductor device |
US6071816A (en) | 1997-08-29 | 2000-06-06 | Motorola, Inc. | Method of chemical mechanical planarization using a water rinse to prevent particle contamination |
US6143191A (en) | 1997-11-10 | 2000-11-07 | Advanced Technology Materials, Inc. | Method for etch fabrication of iridium-based electrode structures |
JPH11204791A (en) | 1997-11-17 | 1999-07-30 | Toshiba Corp | Semiconductor device and its manufacture |
US5976928A (en) | 1997-11-20 | 1999-11-02 | Advanced Technology Materials, Inc. | Chemical mechanical polishing of FeRAM capacitors |
US6346741B1 (en) | 1997-11-20 | 2002-02-12 | Advanced Technology Materials, Inc. | Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same |
KR20010042616A (en) | 1998-04-10 | 2001-05-25 | 페로 코포레이션 | Slurry for chemical-mechanical polishing metal surfaces |
US6110830A (en) | 1998-04-24 | 2000-08-29 | Micron Technology, Inc. | Methods of reducing corrosion of materials, methods of protecting aluminum within aluminum-comprising layers from electrochemical degradation during semiconductor processing methods of forming aluminum-comprising lines |
US6143192A (en) | 1998-09-03 | 2000-11-07 | Micron Technology, Inc. | Ruthenium and ruthenium dioxide removal method and material |
US6039633A (en) | 1998-10-01 | 2000-03-21 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6436723B1 (en) | 1998-10-16 | 2002-08-20 | Kabushiki Kaisha Toshiba | Etching method and etching apparatus method for manufacturing semiconductor device and semiconductor device |
US6278153B1 (en) | 1998-10-19 | 2001-08-21 | Nec Corporation | Thin film capacitor formed in via |
JP3494933B2 (en) | 1998-10-26 | 2004-02-09 | 株式会社ルネサステクノロジ | Semiconductor manufacturing apparatus cleaning method |
US6290736B1 (en) | 1999-02-09 | 2001-09-18 | Sharp Laboratories Of America, Inc. | Chemically active slurry for the polishing of noble metals and method for same |
US6261157B1 (en) * | 1999-05-25 | 2001-07-17 | Applied Materials, Inc. | Selective damascene chemical mechanical polishing |
DE19927286B4 (en) | 1999-06-15 | 2011-07-28 | Qimonda AG, 81739 | Use of a grinding solution for the chemical mechanical polishing of a precious metal surface |
US6306012B1 (en) | 1999-07-20 | 2001-10-23 | Micron Technology, Inc. | Methods and apparatuses for planarizing microelectronic substrate assemblies |
IL147235A0 (en) | 1999-08-13 | 2002-08-14 | Cabot Microelectronics Corp | Chemical mechanical polishing systems and methods for their use |
US6368518B1 (en) | 1999-08-25 | 2002-04-09 | Micron Technology, Inc. | Methods for removing rhodium- and iridium-containing films |
DE19959711A1 (en) | 1999-12-10 | 2001-06-21 | Infineon Technologies Ag | Process for producing a structured metal layer |
WO2001044396A1 (en) | 1999-12-14 | 2001-06-21 | Rodel Holdings, Inc. | Polishing compositions for noble metals |
US6379406B1 (en) | 1999-12-14 | 2002-04-30 | Rodel Holdings, Inc. | Polishing compositions for semiconductor substrates |
US20020039839A1 (en) | 1999-12-14 | 2002-04-04 | Thomas Terence M. | Polishing compositions for noble metals |
JP2001187877A (en) | 1999-12-28 | 2001-07-10 | Nec Corp | Slurry for chemical mechanical polishing |
JP2001196413A (en) | 2000-01-12 | 2001-07-19 | Mitsubishi Electric Corp | Semiconductor device, method of manufacturing the same, cmp device and method |
TWI296006B (en) | 2000-02-09 | 2008-04-21 | Jsr Corp | |
JP4510979B2 (en) | 2000-02-23 | 2010-07-28 | ルネサスエレクトロニクス株式会社 | Method for using ruthenium or ruthenium oxide removing liquid and method for removing ruthenium or ruthenium oxide |
DE10022649B4 (en) | 2000-04-28 | 2008-06-19 | Qimonda Ag | Polishing fluid and method for structuring metal oxides |
DE10024874A1 (en) | 2000-05-16 | 2001-11-29 | Siemens Ag | Polishing liquid and method for structuring metals and metal oxides |
US6482736B1 (en) | 2000-06-08 | 2002-11-19 | Micron Technology, Inc. | Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers |
JP4108941B2 (en) | 2000-10-31 | 2008-06-25 | 株式会社荏原製作所 | Substrate gripping apparatus, processing apparatus, and gripping method |
US6756308B2 (en) | 2001-02-13 | 2004-06-29 | Ekc Technology, Inc. | Chemical-mechanical planarization using ozone |
TW543093B (en) | 2001-04-12 | 2003-07-21 | Cabot Microelectronics Corp | Method of reducing in-trench smearing during polishing |
US6589100B2 (en) | 2001-09-24 | 2003-07-08 | Cabot Microelectronics Corporation | Rare earth salt/oxidizer-based CMP method |
US6884723B2 (en) | 2001-12-21 | 2005-04-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using complexing agents |
US6730592B2 (en) | 2001-12-21 | 2004-05-04 | Micron Technology, Inc. | Methods for planarization of metal-containing surfaces using halogens and halide salts |
US6527622B1 (en) | 2002-01-22 | 2003-03-04 | Cabot Microelectronics Corporation | CMP method for noble metals |
-
2001
- 2001-12-21 US US10/028,616 patent/US7121926B2/en not_active Expired - Lifetime
-
2002
- 2002-12-09 TW TW091135562A patent/TWI237853B/en not_active IP Right Cessation
- 2002-12-17 AT AT02787052T patent/ATE353735T1/en not_active IP Right Cessation
- 2002-12-17 KR KR1020047009635A patent/KR100667391B1/en not_active IP Right Cessation
- 2002-12-17 WO PCT/US2002/040406 patent/WO2003059571A1/en active IP Right Grant
- 2002-12-17 AU AU2002351393A patent/AU2002351393A1/en not_active Abandoned
- 2002-12-17 EP EP02787052A patent/EP1458520B1/en not_active Expired - Lifetime
- 2002-12-17 DE DE60218218T patent/DE60218218T2/en not_active Expired - Lifetime
- 2002-12-17 JP JP2003559719A patent/JP2005514798A/en active Pending
- 2002-12-17 CN CNB028255666A patent/CN100408267C/en not_active Expired - Fee Related
-
2006
- 2006-04-06 US US11/398,903 patent/US20060194518A1/en not_active Abandoned
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6069080A (en) * | 1992-08-19 | 2000-05-30 | Rodel Holdings, Inc. | Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like |
US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
US6177026B1 (en) * | 1998-05-26 | 2001-01-23 | Cabot Microelectronics Corporation | CMP slurry containing a solid catalyst |
US6395194B1 (en) * | 1998-12-18 | 2002-05-28 | Intersurface Dynamics Inc. | Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same |
US6509273B1 (en) * | 1999-04-28 | 2003-01-21 | Hitachi, Ltd. | Method for manufacturing a semiconductor device |
US20020004360A1 (en) * | 2000-06-01 | 2002-01-10 | Katsuhiro Ota | Polishing slurry |
US6758872B2 (en) * | 2000-06-01 | 2004-07-06 | Hitachi, Ltd. | Polishing slurry |
US20060183334A1 (en) * | 2001-12-21 | 2006-08-17 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using oxidizing gases |
US7121926B2 (en) * | 2001-12-21 | 2006-10-17 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article |
US20060261040A1 (en) * | 2001-12-21 | 2006-11-23 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using oxidizing agents |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050148182A1 (en) * | 2001-12-21 | 2005-07-07 | Micron Technology, Inc. | Compositions for planarization of metal-containing surfaces using halogens and halide salts |
US20060183334A1 (en) * | 2001-12-21 | 2006-08-17 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using oxidizing gases |
US20060261040A1 (en) * | 2001-12-21 | 2006-11-23 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using oxidizing agents |
US7327034B2 (en) | 2001-12-21 | 2008-02-05 | Micron Technology, Inc. | Compositions for planarization of metal-containing surfaces using halogens and halide salts |
US20120255635A1 (en) * | 2011-04-11 | 2012-10-11 | Applied Materials, Inc. | Method and apparatus for refurbishing gas distribution plate surfaces |
Also Published As
Publication number | Publication date |
---|---|
CN100408267C (en) | 2008-08-06 |
TW200301518A (en) | 2003-07-01 |
KR20040065296A (en) | 2004-07-21 |
AU2002351393A1 (en) | 2003-07-30 |
JP2005514798A (en) | 2005-05-19 |
EP1458520B1 (en) | 2007-02-14 |
EP1458520A1 (en) | 2004-09-22 |
ATE353735T1 (en) | 2007-03-15 |
US7121926B2 (en) | 2006-10-17 |
TWI237853B (en) | 2005-08-11 |
US20030119426A1 (en) | 2003-06-26 |
KR100667391B1 (en) | 2007-01-10 |
DE60218218D1 (en) | 2007-03-29 |
DE60218218T2 (en) | 2007-10-25 |
CN1606486A (en) | 2005-04-13 |
WO2003059571A1 (en) | 2003-07-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20060194518A1 (en) | Methods for planarization of Group VIII metal-containing surfaces using a fixed abrasive article | |
US6720265B2 (en) | Composition compatible with aluminum planarization and methods therefore | |
US20050159086A1 (en) | Methods for planarization of group VIII metal-containing surfaces using complexing agents | |
US7327034B2 (en) | Compositions for planarization of metal-containing surfaces using halogens and halide salts | |
US20060183334A1 (en) | Methods for planarization of group VIII metal-containing surfaces using oxidizing gases | |
EP0874390A1 (en) | Grinding method of grinding device | |
US20060261040A1 (en) | Methods for planarization of group VIII metal-containing surfaces using oxidizing agents | |
US20060201913A1 (en) | Methods and compositions for removing Group VIII metal-containing materials from surfaces | |
JP3510036B2 (en) | Method for manufacturing semiconductor device | |
JP2004128112A (en) | Manufacturing method of semiconductor device | |
EP1297927A2 (en) | Polishing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |