US20060163712A1 - System and method for direct-bonding of substrates - Google Patents
System and method for direct-bonding of substrates Download PDFInfo
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- US20060163712A1 US20060163712A1 US11/278,758 US27875806A US2006163712A1 US 20060163712 A1 US20060163712 A1 US 20060163712A1 US 27875806 A US27875806 A US 27875806A US 2006163712 A1 US2006163712 A1 US 2006163712A1
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- substrate
- bonding
- bonding surface
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- layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0067—Packages or encapsulation for controlling the passage of optical signals through the package
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00357—Creating layers of material on a substrate involving bonding one or several substrates on a non-temporary support, e.g. another substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/036—Fusion bonding
Definitions
- the present invention relates generally to the field of bonding of substrates.
- the invention relates to methods of bonding substrates in MEMS and other devices to reduce the reflection loss of light.
- a device may include an interference-based digital light display (DLD) package which includes two or more substrates to direct light to and from the DLD.
- DLD digital light display
- a DLD can be used in digital projectors for processing or generating an image from a source light.
- the package 100 includes a base substrate 120 with a driving electrode 122 , a pixel plate 110 which can move vertically, and a thin protective substrate or membrane 130 .
- a reflective coating may be provided on the pixel plate 110 , and a partial reflective coating may be provided on the bottom surface of the membrane 130 .
- the protective membrane 130 encloses a cavity in which the DLD pixel plate 110 is enclosed and allows some light to pass therethrough.
- a second substrate 140 which may be made of thick glass, is provided in close proximity to the protective membrane 130 for processing the light, for example.
- the protective membrane 130 and the second substrate 140 are separated by a bond ring 150 positioned at the perimeter of the protective membrane 130 and the second substrate 140 .
- light 160 from a source can pass through the second substrate 140 and the protective membrane 130 to reach the pixel plate 110 .
- the processed light 170 goes through the second substrate 140 to additional light processing components such as lenses, for example.
- the protective membrane 130 and the second substrate 140 may each have a different RI, while the space between the protective membrane 130 and the second substrate 140 may have a third different RI.
- This change in RI along the path of the light causes a portion of the light 160 , 170 to be lost as reflected light 180 , thereby reducing the quality of the image generated by the DLD package 100 .
- the various surfaces of the protective membrane 130 and the second substrate 140 may be provided with anti-reflective coating. Such coating can be expensive and difficult to implement, particularly for certain internal surfaces. Further, the package may not be hermetically sealed, as moisture or gas molecules may penetrate the bond ring 150 .
- One embodiment of the invention relates to a method of bonding substrates.
- the method includes depositing a layer of bonding substrate material onto a bonding surface of a first substrate.
- a bonding site density of at least one of the layer of bonding substrate material on the first substrate and a bonding surface of a second substrate is increased, and the bonding surface of the first substrate having the layer of bonding substrate material is bonded to the bonding surface of the second substrate.
- the package includes a first substrate having a bonding surface, a second substrate having a polished bonding surface facing the bonding surface of the first substrate, and a polished layer of bonding substrate material deposited onto the bonding surface of the first substrate and fusion bonded to the polished bonding surface of the second substrate.
- FIG. 1 is a cross-sectional view of a prior art MEMS device
- FIG. 2 is a cross-sectional view of a MEMS device according to an embodiment of the invention.
- FIG. 3 is a cross-sectional view of the MEMS device of FIG. 2 prior to bonding of the substrates;
- FIG. 4 is a flow chart illustrating a method of bonding substrates according to an embodiment of the invention.
- the package 200 includes an image processing device for use in a digital projector.
- the package 200 includes an exemplary digital light display (DLD) device with a pixel plate 210 mounted on a support base 220 with a driving electrode 222 .
- DLD digital light display
- other optical devices may be used, such as a liquid crystal display (LCD) or liquid crystal on silicon (LCOS), for example.
- LCD liquid crystal display
- LCOS liquid crystal on silicon
- Such optical devices are well known to those skilled in the art and do not require further discussion for purposes of this application.
- the package 200 in the illustrated embodiment is an optical device, it will be understood by those skilled in the art that the invention is not limited to optical devices and may include other devices having two or more substrates.
- the support base 220 may be made of a variety of materials, such as a semiconductor or a non-conductive substrate, and may have a thickness selected to provide sufficient strength to support the DLD pixel plate 210 .
- the material and thickness of the support base 220 is not limiting on the invention.
- the pixel plate 210 is encased by a protective membrane 230 mounted on the support base 220 .
- the substrate 230 can be made of a variety of materials.
- the protective membrane 230 is made of tetraethoxysilane (TEOS).
- TEOS tetraethoxysilane
- the protective membrane 230 may have a partial reflective coating on its bottom surface and can allow portion of an incoming light to pass therethrough. The light is reflected back from the pixel plate 210 to generate the desirable interference color effect based on the gap between the pixel plate 210 and the protective membrane 230 .
- the protective membrane 230 may have a known refractive index (RI). In the case of TEOS, the protective membrane 230 has an RI of approximately 1.5.
- the protective membrane 230 has a thickness of between 0.5 and 2.0 microns at least in the region above the pixel plate 210 .
- a lid 240 is positioned above the protective membrane 230 .
- the lid 240 is adapted to allow light to pass therethrough.
- the lid 240 is made of a substrate material, such as glass, and has a thickness of between 0.5 and 3 mm. The thickness of the lid 240 may be selected according to various system requirements, such as gas permeability, for example.
- the lid 240 may have an RI that is similar or different from the RI of the substrate 230 .
- the lid 240 is formed of glass and has an RI of approximately 1 . 5 , similar to the RI of the protective membrane 230 .
- the lid 240 and the protective membrane 230 are bonded together with a thin layer 250 of a bonding substrate material therebetween.
- the layer of bonding substrate material 250 is positioned between the protective membrane 230 and the lid 240 and has a thickness on the order of a few microns.
- the layer 250 is formed of a material having an RI that is similar to the RI at least one of the protective membrane 230 and the lid 240 .
- the bonding substrate material may include any or a variety of materials.
- the bonding substrate material may be a semiconductor, a dielectric or an insulator material.
- the bonding substrate material may be formed of polysilicone, TEOS, silicon nitride, or glass frit material, for example.
- the bonding substrate material is formed of TEOS that has been deposited onto a bonding surface of the lid 240 , as described below with reference to FIGS. 3 and 4 .
- the need for an anti-reflective (AR) coating is eliminated on the bonding surfaces of the lid 240 and the protective membrane 230 .
- the RI of each of the protective membrane 230 , lid 240 and the layer 250 may be selected to be similar to each other, the undesired reflection of light from the bonding surfaces is eliminated or substantially reduced.
- the protective membrane 230 and the layer 250 may be formed of TEOS, and the lid 240 may be formed of glass, each having an RI of approximately 1.5.
- the method 400 includes depositing a layer of bonding substrate material 250 , such as TEOS, amorphous silicon, phosphosilicate glass (PSG), glass frit, or silicon nitride to a bonding surface 242 of the lid 240 , which may be formed of glass (block 410 ).
- the bonding substrate material 250 may be deposited through a variety of methods such as sputtering, chemical vapor deposition (CVD), or screen print, for example.
- the layer of bonding substrate material 250 is a relatively thin layer having a thickness on the order of between tens of an angstrom and tenths of a micron.
- an AR coating is applied to the opposite surface of the lid 240 .
- the bonding surfaces may be polished for smoothness.
- the bonding surface 232 of the protective membrane 230 and the layer of bonding substrate material 250 on the bonding surface 242 of the lid 240 may be polished to Angstrom-level flatness via chemical-mechanical polishing (CMP), for example.
- CMP chemical-mechanical polishing
- the bonding site (silanol group) density of at least one of the bonding surfaces is increased to provide a more secure bonding of the substrates.
- the bonding site density may be increased through, for example, plasma treatment and an optional wet treatment with either de-ionized water or SC1 (Standard Clean 1) chemistry.
- SC1 Standard Clean 1
- the bond density of the bonding surface 232 of the protective membrane 230 or the layer of bonding substrate material 250 on the bonding surface 242 of the lid 240 may be increased through any of a variety of methods including plasma treatment, ion implant and physical sputtering.
- the bonding site density is increased for both surfaces. The increase in bonding site density effectively increases the bond strength of the samples.
- the bonding site density is increased by plasma treating the bonding surfaces. This may be accomplished through, for example, an ion beam sputtering process, a reactive ion etcher, striking plasma onto the bonding surface, ion implantation or ion bombardment.
- the plasma treatment may use O 2 , N 2 or Ar plasma, for example.
- the bonding surfaces may be dipped in de-ionized water or SC1 chemistry for a period of time.
- a minute or less is generally sufficient to increase the silanol group (Si—OH) density of the surfaces.
- dipping for five minutes may be sufficient.
- the surfaces may then be dried using, for example, a spin-rinse drier.
- Other methods of increasing bonding site density are well known to those skilled in the art and are contemplated within the scope of the invention.
- the bonding surfaces are fusion bonded at room temperature.
- the fusion bonding may be accomplished by holding the bonding surfaces together while applying a compression force.
- the increased bonding site density allows the fusion bonding to be performed at substantially room temperature, rather than typical fusion bonding processes which may require annealing temperatures as high as 900 ° C.
- Room temperature includes temperatures ranging between approximately 15 and approximately 40° C.
- the package 200 is annealed.
- the lid 240 formed of glass with a thin layer 250 of TEOS is bonded to a protective membrane 230 formed of TEOS, and the package 200 is annealed at approximately 200° C. for approximately two hours.
- the protective membrane 230 and the lid 240 are bonded to each other with no need for AR coating on the bonding surfaces 232 , 242 .
- the increasing of the silanol-group density through plasma treatment and post-bond annealing provide a bond of sufficient strength to secure the protective membrane 230 and the lid 240 to each other.
- the package 200 may be made hermetically sealed by assuring that the lid 240 is sufficiently thick to prevent moisture or gas molecules to penetrate therethrough.
- a lid 240 formed of glass and having a thickness between 0.5 and 3 mm is sufficient.
Abstract
A MEMS package includes a first substrate having a bonding surface and a second substrate having a polished bonding surface facing the bonding surface of the first substrate. The MEMS package further includes a polished layer of bonding substrate material deposited onto the bonding surface of the first substrate and fusion bonded to the polished bonding surface of the second substrate.
Description
- This application is a divisional of application Ser. No. 10/816,509, filed Mar. 31, 2004, hereby incorporated by reference.
- The present invention relates generally to the field of bonding of substrates. In particular, the invention relates to methods of bonding substrates in MEMS and other devices to reduce the reflection loss of light.
- MEMS and other devices often include two or more substrates either in close proximity or bonded together. For example, in optical systems such as digital projectors, a device may include an interference-based digital light display (DLD) package which includes two or more substrates to direct light to and from the DLD. Similar to a CRT in a rear-projection television, a DLD can be used in digital projectors for processing or generating an image from a source light.
- One such DLD package is illustrated in
FIG. 1 . Thepackage 100 includes abase substrate 120 with adriving electrode 122, apixel plate 110 which can move vertically, and a thin protective substrate ormembrane 130. A reflective coating may be provided on thepixel plate 110, and a partial reflective coating may be provided on the bottom surface of themembrane 130. Theprotective membrane 130 encloses a cavity in which theDLD pixel plate 110 is enclosed and allows some light to pass therethrough. In some cases, such as in the case of thepackage 100 illustrated inFIG. 1 , asecond substrate 140, which may be made of thick glass, is provided in close proximity to theprotective membrane 130 for processing the light, for example. Theprotective membrane 130 and thesecond substrate 140 are separated by abond ring 150 positioned at the perimeter of theprotective membrane 130 and thesecond substrate 140. Thus,light 160 from a source (not shown) can pass through thesecond substrate 140 and theprotective membrane 130 to reach thepixel plate 110. By moving the pixel plate vertically, different light colors are generated as a result of light interference. As the gap between thepixel plate 110 and theprotective membrane 130 changes, the processed light 170 (image) goes through thesecond substrate 140 to additional light processing components such as lenses, for example. - As the
light protective membrane 130 and thesecond substrate 140, it passes through regions of differing refractive indices (RI's). For example, theprotective membrane 130 and thesecond substrate 140 may each have a different RI, while the space between theprotective membrane 130 and thesecond substrate 140 may have a third different RI. This change in RI along the path of the light causes a portion of thelight light 180, thereby reducing the quality of the image generated by theDLD package 100. To counter the reflection, the various surfaces of theprotective membrane 130 and thesecond substrate 140 may be provided with anti-reflective coating. Such coating can be expensive and difficult to implement, particularly for certain internal surfaces. Further, the package may not be hermetically sealed, as moisture or gas molecules may penetrate thebond ring 150. - One embodiment of the invention relates to a method of bonding substrates. The method includes depositing a layer of bonding substrate material onto a bonding surface of a first substrate. A bonding site density of at least one of the layer of bonding substrate material on the first substrate and a bonding surface of a second substrate is increased, and the bonding surface of the first substrate having the layer of bonding substrate material is bonded to the bonding surface of the second substrate.
- Another embodiment of the invention relates to a MEMS package. The package includes a first substrate having a bonding surface, a second substrate having a polished bonding surface facing the bonding surface of the first substrate, and a polished layer of bonding substrate material deposited onto the bonding surface of the first substrate and fusion bonded to the polished bonding surface of the second substrate.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary and exemplary only, and are not restrictive of the invention as claimed.
-
FIG. 1 is a cross-sectional view of a prior art MEMS device; -
FIG. 2 is a cross-sectional view of a MEMS device according to an embodiment of the invention; -
FIG. 3 is a cross-sectional view of the MEMS device ofFIG. 2 prior to bonding of the substrates; and -
FIG. 4 is a flow chart illustrating a method of bonding substrates according to an embodiment of the invention. - Referring to
FIG. 2 , a cross-sectional view of a package according to an embodiment of the invention is illustrated. In one embodiment, thepackage 200 includes an image processing device for use in a digital projector. Thepackage 200 includes an exemplary digital light display (DLD) device with apixel plate 210 mounted on asupport base 220 with adriving electrode 222. Of course, other optical devices may be used, such as a liquid crystal display (LCD) or liquid crystal on silicon (LCOS), for example. Such optical devices are well known to those skilled in the art and do not require further discussion for purposes of this application. While thepackage 200 in the illustrated embodiment is an optical device, it will be understood by those skilled in the art that the invention is not limited to optical devices and may include other devices having two or more substrates. - The
support base 220 may be made of a variety of materials, such as a semiconductor or a non-conductive substrate, and may have a thickness selected to provide sufficient strength to support theDLD pixel plate 210. The material and thickness of thesupport base 220 is not limiting on the invention. - The
pixel plate 210 is encased by aprotective membrane 230 mounted on thesupport base 220. Thesubstrate 230 can be made of a variety of materials. In one embodiment, theprotective membrane 230 is made of tetraethoxysilane (TEOS). Theprotective membrane 230 may have a partial reflective coating on its bottom surface and can allow portion of an incoming light to pass therethrough. The light is reflected back from thepixel plate 210 to generate the desirable interference color effect based on the gap between thepixel plate 210 and theprotective membrane 230. Theprotective membrane 230 may have a known refractive index (RI). In the case of TEOS, theprotective membrane 230 has an RI of approximately 1.5. In one embodiment, theprotective membrane 230 has a thickness of between 0.5 and 2.0 microns at least in the region above thepixel plate 210. - A
lid 240 is positioned above theprotective membrane 230. For an optical device, thelid 240 is adapted to allow light to pass therethrough. In a particular embodiment, thelid 240 is made of a substrate material, such as glass, and has a thickness of between 0.5 and 3 mm. The thickness of thelid 240 may be selected according to various system requirements, such as gas permeability, for example. Thelid 240 may have an RI that is similar or different from the RI of thesubstrate 230. In one embodiment, thelid 240 is formed of glass and has an RI of approximately 1.5, similar to the RI of theprotective membrane 230. - The
lid 240 and theprotective membrane 230 are bonded together with athin layer 250 of a bonding substrate material therebetween. The layer of bondingsubstrate material 250 is positioned between theprotective membrane 230 and thelid 240 and has a thickness on the order of a few microns. In a particular embodiment, thelayer 250 is formed of a material having an RI that is similar to the RI at least one of theprotective membrane 230 and thelid 240. The bonding substrate material may include any or a variety of materials. For example, the bonding substrate material may be a semiconductor, a dielectric or an insulator material. The bonding substrate material may be formed of polysilicone, TEOS, silicon nitride, or glass frit material, for example. In one embodiment, the bonding substrate material is formed of TEOS that has been deposited onto a bonding surface of thelid 240, as described below with reference toFIGS. 3 and 4 . - In this arrangement, the need for an anti-reflective (AR) coating is eliminated on the bonding surfaces of the
lid 240 and theprotective membrane 230. Since the RI of each of theprotective membrane 230,lid 240 and thelayer 250 may be selected to be similar to each other, the undesired reflection of light from the bonding surfaces is eliminated or substantially reduced. Thus, in one embodiment, theprotective membrane 230 and thelayer 250 may be formed of TEOS, and thelid 240 may be formed of glass, each having an RI of approximately 1.5. - An embodiment of a process of forming the package of
FIG. 2 will now be described with reference toFIGS. 3 and 4 . Themethod 400 includes depositing a layer ofbonding substrate material 250, such as TEOS, amorphous silicon, phosphosilicate glass (PSG), glass frit, or silicon nitride to abonding surface 242 of thelid 240, which may be formed of glass (block 410). Thebonding substrate material 250 may be deposited through a variety of methods such as sputtering, chemical vapor deposition (CVD), or screen print, for example. The layer ofbonding substrate material 250 is a relatively thin layer having a thickness on the order of between tens of an angstrom and tenths of a micron. In one embodiment, an AR coating is applied to the opposite surface of thelid 240. - The bonding surfaces may be polished for smoothness. In this regard, the
bonding surface 232 of theprotective membrane 230 and the layer ofbonding substrate material 250 on thebonding surface 242 of thelid 240 may be polished to Angstrom-level flatness via chemical-mechanical polishing (CMP), for example. - At
block 420, the bonding site (silanol group) density of at least one of the bonding surfaces is increased to provide a more secure bonding of the substrates. The bonding site density may be increased through, for example, plasma treatment and an optional wet treatment with either de-ionized water or SC1 (Standard Clean 1) chemistry. In this regard, the bond density of thebonding surface 232 of theprotective membrane 230 or the layer ofbonding substrate material 250 on thebonding surface 242 of thelid 240 may be increased through any of a variety of methods including plasma treatment, ion implant and physical sputtering. In a particular embodiment, the bonding site density is increased for both surfaces. The increase in bonding site density effectively increases the bond strength of the samples. - In one embodiment, the bonding site density is increased by plasma treating the bonding surfaces. This may be accomplished through, for example, an ion beam sputtering process, a reactive ion etcher, striking plasma onto the bonding surface, ion implantation or ion bombardment. The plasma treatment may use O2, N2 or Ar plasma, for example.
- Following the plasma treatment, the bonding surfaces may be dipped in de-ionized water or SC1 chemistry for a period of time. In this regard, a minute or less is generally sufficient to increase the silanol group (Si—OH) density of the surfaces. For example, dipping for five minutes may be sufficient. The surfaces may then be dried using, for example, a spin-rinse drier. Other methods of increasing bonding site density are well known to those skilled in the art and are contemplated within the scope of the invention.
- At
block 430, the bonding surfaces are fusion bonded at room temperature. The fusion bonding may be accomplished by holding the bonding surfaces together while applying a compression force. The increased bonding site density allows the fusion bonding to be performed at substantially room temperature, rather than typical fusion bonding processes which may require annealing temperatures as high as 900 ° C. “Room temperature,” as used herein, includes temperatures ranging between approximately 15 and approximately 40° C. - In one embodiment, the
package 200 is annealed. In one embodiment, thelid 240 formed of glass with athin layer 250 of TEOS is bonded to aprotective membrane 230 formed of TEOS, and thepackage 200 is annealed at approximately 200° C. for approximately two hours. - Thus, the
protective membrane 230 and thelid 240 are bonded to each other with no need for AR coating on the bonding surfaces 232, 242. The increasing of the silanol-group density through plasma treatment and post-bond annealing provide a bond of sufficient strength to secure theprotective membrane 230 and thelid 240 to each other. Further, thepackage 200 may be made hermetically sealed by assuring that thelid 240 is sufficiently thick to prevent moisture or gas molecules to penetrate therethrough. In this regard, alid 240 formed of glass and having a thickness between 0.5 and 3 mm is sufficient. - The foregoing description of embodiments of the invention have been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed, and modifications and variation are possible in light of the above teachings or may be acquired from practice of the invention. The embodiment was chosen and described in order to explain the principles of the invention and its practical application to enable one skilled in the art to utilize the invention in various embodiments and with various modification as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the claims appended hereto and their equivalents.
Claims (10)
1. A MEMS package, comprising:
a first substrate having a bonding surface;
a second substrate having a polished bonding surface facing the bonding surface of the first substrate; and
a polished layer of bonding substrate material deposited onto the bonding surface of the first substrate and fusion bonded to the polished bonding surface of the second substrate.
2. A MEMS package according to claim 1 , wherein the polished bonding surface of the second substrate and the polished layer of bonding substrate material have Angstrom-level flatness.
3. A MEMS package according to claim 1 , wherein the first substrate, the second substrate and the bonding substrate material each have a substantially identical refractive index.
4. A MEMS package according to claim 1 , wherein the first substrate, the second substrate and the bonding substrate material form a hermetic seal around a MEMS device.
5. A digital projector, comprising:
a MEMS package, wherein the package comprises:
a first substrate having a bonding surface;
a second substrate having a polished bonding surface facing the bonding surface of the first substrate; and
a polished layer of bonding substrate material deposited onto the bonding surface of the first substrate and fusion bonded to the polished bonding surface of the second substrate.
6. A digital projector according to claim 5 , wherein the polished bonding surface of the second substrate and the polished layer of bonding substrate material have Angstrom-level flatness.
7. A digital projector according to claim 5 , wherein the first substrate, the second substrate and the bonding substrate material each have a substantially identical refractive index.
8. A digital projector according to claim 5 , wherein the first substrate, the second substrate and the bonding substrate material form a hermetic seal around a MEMS device.
9. A MEMS package, comprising:
a first substrate having a bonding surface;
a second substrate having a polished bonding surface facing the bonding surface of the first substrate; and
means for bonding deposited onto the bonding surface of the first substrate and fusion bonded to the polished bonding surface of the second substrate.
10. A MEMS package formed by a method comprising the steps of:
depositing a layer of bonding substrate material onto a bonding surface of a first substrate;
increasing a bonding site density of at least one of either the layer of bonding substrate material on said first substrate or a bonding surface of a second substrate; and
bonding the bonding surface of the first substrate having the layer of bonding substrate material to the bonding surface of the second substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US11/278,758 US20060163712A1 (en) | 2004-03-31 | 2006-04-05 | System and method for direct-bonding of substrates |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/816,509 US7087134B2 (en) | 2004-03-31 | 2004-03-31 | System and method for direct-bonding of substrates |
US11/278,758 US20060163712A1 (en) | 2004-03-31 | 2006-04-05 | System and method for direct-bonding of substrates |
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US10/816,509 Division US7087134B2 (en) | 2004-03-31 | 2004-03-31 | System and method for direct-bonding of substrates |
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US20060163712A1 true US20060163712A1 (en) | 2006-07-27 |
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US11/278,758 Abandoned US20060163712A1 (en) | 2004-03-31 | 2006-04-05 | System and method for direct-bonding of substrates |
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US10/816,509 Active 2024-05-16 US7087134B2 (en) | 2004-03-31 | 2004-03-31 | System and method for direct-bonding of substrates |
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DE112005000625T5 (en) | 2007-02-22 |
JP4536113B2 (en) | 2010-09-01 |
GB2427309A (en) | 2006-12-20 |
US20050224155A1 (en) | 2005-10-13 |
TW200534372A (en) | 2005-10-16 |
US7087134B2 (en) | 2006-08-08 |
JP2007530304A (en) | 2007-11-01 |
GB0617733D0 (en) | 2006-10-18 |
WO2005097668A1 (en) | 2005-10-20 |
GB2427309B (en) | 2009-01-21 |
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