US20060110853A1 - Structure of embedded active components and manufacturing method thereof - Google Patents
Structure of embedded active components and manufacturing method thereof Download PDFInfo
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- US20060110853A1 US20060110853A1 US11/252,572 US25257205A US2006110853A1 US 20060110853 A1 US20060110853 A1 US 20060110853A1 US 25257205 A US25257205 A US 25257205A US 2006110853 A1 US2006110853 A1 US 2006110853A1
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- active components
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Abstract
A structure of embedded active components and the manufacturing method thereof are provided. The manufacturing steps involve providing a molding plate, and setting several active components on the molding plate as first. A dielectric layer covers the molding plate to cap the active components. An electric circuit is formed on the dielectric layer, in contact with the active components. Finally, the structure with embedded active components is released from the molding plate.
Description
- This Non-provisional application claims priority under 35 U.S.C. § 119(a) on Patent Application No(s). 93135743 filed in Taiwan on Nov. 19, 2004, the entire contents of which are hereby incorporated by reference.
- 1. Field of Invention
- The invention relates to a package structure and the manufacturing method thereof. In particular, it relates to a structure of embedded active components and the method of making the same.
- 2. Related Art
- In order to create larger space and to enhance the functions of the module within a limited substrate area, shrunk or embedded passive components are often used to minimize the circuit layout and to reduce the signal transmission distance. Thus, more space is left for installing active components and enhancing the overall performance. Therefore, substrates with passive components such as embedded resistors, capacitors, and inductors are developed.
- In order to more effectively minimize the packaging of the components, methods of embedding active components (such as IC chips) on a substrate have been developed. The substrate with an embedded IC module as disclosed in the U.S. Pat. No. 5,497,033 has a plurality of chips installed thereon. A molding plate is first used to enclose the chips to be the embedded components. A molding material then covers the chips using the conventional molding method. The chips are thud embedded in the molding material after curing. However, this method completes the whole process of embedding components on the substrate. It is likely to damage other components not to be embedded. The finished substrate is not flexible and has limited applications.
- In the U.S. Pat. No. 6,027,958, a transferring manufacturing method for the flexible IC components is teached. A semiconductor substrate with silicon on insulator (SOI) structure is provided to form the required IC thereon. An adhesive layer is used to attach another flexible substrate on the IC. Finally, etching is employed to remove the semiconductor substrate, thereby transferring the IC onto the surface of the flexible substrate.
- In view of the foregoing, an objective of the invention is to provide a structure of embedded active components and the method of making the same. By forming an embedded structure with multiple active components, the alignment problem in subsequent packaging can be solved. Moreover, the active components are electrically tested. Therefore, the invention can effectively increase the product yield.
- The disclosed method for making the structure of embedded active components includes the steps of; providing a molding plate; disposing with alignment a plurality of active components on the molding plate; covering a dielectric layer on the molding plate to cap the active components; making a circuit on the dielectric layer, in contact with the active components; and releasing the dielectric layer embedded with the active components from the molding plate.
- The dielectric layer may be a polymer layer. The step of making a circuit on the dielectric layer can be performed by forming a plurality of conductive holes connecting to the active components on the dielectric layer and then forming the circuit passing through the conductive hole.
- The invention further discloses a structure of embedded active components, which comprises a dielectric layer, a plurality of active components, and a circuit. The active components are embedded into the dielectric layer. The circuit is installed on the dielectric layer and connected to the active components.
- The invention will become more fully understood from the detailed description given hereinbelow illustration only, and thus are not limitative of the present invention, and wherein:
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FIG. 1 is a schematic view of the disclosed method; -
FIGS. 2A to 2F are schematic cross-sectional views of the manufacturing process according to an embodiment of the invention; and -
FIG. 3 is a schematic cross-sectional view of another embodiment of the invention. - The steps of the disclosed method are shown in
FIG. 1 . First, a molding plate is provided (step 110). Several active components are disposed with alignment on the molding plate (step 120). A dielectric layer is deposited on the molding plate (step 130) to cover the active components. A circuit is made on the dielectric layer (step 140), in contact with the active components. Finally, the molding plate is removed (step 150), releasing the dielectric layer with embedded active components from the molding plate. One then obtains a structure of embedded active components. - When the dielectric layer is a polymer layer, it can be a preprocessed or existing polymer layer, such as the Ajinomoto build-up film (ABF) or the resin coated copper foil (RCC). The above process also includes the step of embossing to embed active components into the polymer layer or the step of coating a polymer solution followed by curing to form the dielectric layer. The latter includes the steps of: covering a polymer solution on the active components by spraying, spin-coating, or printing; and curing the polymer solution to form a polymer layer.
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Step 140 inFIG. 1 makes a circuit on the insulator. Several conductive holes connecting to the active components are first formed on the dielectric layer, followed by forming the circuit passing through the conductive holes. - The process in an embodiment of the invention is further described in detail with reference to
FIGS. 2A to 2F. - As shown in
FIG. 2A , a metal mold-departinglayer 210 is deposited on amolding plate 200. The molding material can be Teflon that can be readily removed from the molding plate. The mold-departing layer can be made of any other material with a similar property. - As shown in
FIG. 2B , theactive components 220 are disposed with alignment on themolding plate 200. - As shown in
FIG. 2C , apolymer layer 300 is coated on themolding plate 200 as a dielectric layer to cover the active components. The polymer layer is cured according to the properties of the selected polymer. - As shown in
FIG. 2D , severalconductive holes 310 connecting to theactive components 220 are formed on thepolymer layer 300. Theconductive holes 310 can be formed using laser, etching, or direct exposure. Theconductive holes 310 are further processed by desmearing. - As shown in
FIG. 2E , ametal layer 230 is deposited on thepolymer layer 300. - Photolithography is employed to transfer the required pattern onto the
metal layer 230, forming the circuit with the conductive holes thereon. - Finally, as shown in
FIG. 2F , the molding plate is released from thepolymer layer 300 embedded withactive components 220 to form a structure of embedded active components. - The structure of embedded active components formed using the process of the disclosed embodiment is shown in
FIG. 2F to contain thepolymer layer 300, theactive components 220, and the circuit. Theactive components 220 are embedded in thepolymer layer 300. The circuit is formed on thepolymer layer 300 and connected to theactive components 220 via the conductive holes. -
FIG. 3 shows a cross-sectional view of another embodiment of the invention. The above-mentioned structure of embedded active components can be implanted withsoldering balls 240 at the contact points of the circuit for subsequent electrical connections. - The disclosed structure of embedded active components can be installed with an arbitrary substrate, such as the semiconductor substrate, flexible substrate, or glass substrate. Since the active components have fixed relative positions, only one alignment is required to fix the positions of all the active components. This can greatly lower the difficulty in subsequent processes and increase the product yield.
- Certain variations would be apparent to those skilled in the art, which variations are considered within the spirit and scope of the claimed invention.
Claims (18)
1. A method of making a structure of embedded active components, comprising the steps of:
providing a molding plate;
disposing with alignment a plurality of active components on the molding plate;
covering a dielectric layer on the molding plate to cap the active components;
forming an electrical circuit on the dielectric layer to be in electrical communications with the active components; and
releasing the dielectric layer embedded with the active components from the molding plate.
2. The method of claim 1 , wherein the dielectric layer is a polymer layer.
3. The method of claim 2 , wherein the polymer layer is selected from the group consisting of Ajinomoto build-up film (ABF) and resin coated copper foil (RCC).
4. The method of claim 2 further comprising the step of embedding the active components into the polymer layer by embossing.
5. The method of claim 2 , wherein the step of covering a dielectric layer on the molding plate contains the steps of:
covering a polymer solution on the active components; and
curing the polymer solution.
6. The method of claim 5 , wherein the step of covering a polymer solution on the active components is implemented using a method selected from spraying, spin-coating, and printing.
7. The method of claim 1 , wherein the step of forming an electrical circuit on the dielectric layer includes:
forming a plurality of conductive holes connecting to the active components on the dielectric layer; and
forming an electrical circuit passing through the conductive holes.
8. The method of claim 7 , wherein the conductive holes are formed by a method selected from laser drilling, exposure and developing, and etching.
9. The method of claim 7 , wherein the step of forming an electrical circuit passing through the conductive holes includes the steps of:
depositing a metal layer on the dielectric layer; and
employing photolithography to transfer a required pattern to the metal layer to form the electrical circuit.
10. The method of claim 7 further comprising the step of desmearing the conductive holes.
11. The method of claim 1 , wherein the material of the molding plate if Teflon.
12. The method of claim 1 , wherein the molding plate contains a mold-separating layer.
13. The method of claim 12 , wherein the mold-separating layer is a metal mold-separating layer.
14. The method of claim 1 further comprising the step of implanting soldering balls at contact points of the electrical circuit.
15. A structure of embedded active components, comprising:
a dielectric layer;
a plurality of active components embedded in the dielectric layer; and
an electrical circuit installed on the dielectric layer and in electrical communications with the active components.
16. The structure of embedded active components as in claim 13 , wherein the dielectric layer is a polymer layer.
17. The structure of embedded active components as in claim 13 , wherein the dielectric layer has a plurality of conductive holes for the electrical circuit to connect to the active components.
18. The structure of embedded active components as in claim 13 further comprising a plurality of soldering balls installed at contact points of the electrical circuit.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US12/232,019 US20090008792A1 (en) | 2004-11-19 | 2008-09-10 | Three-dimensional chip-stack package and active component on a substrate |
US12/382,526 US8048716B2 (en) | 2004-11-19 | 2009-03-18 | Structure of embedded active components and manufacturing method thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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TW93135743 | 2004-11-19 | ||
TW093135743A TWI256694B (en) | 2004-11-19 | 2004-11-19 | Structure with embedded active components and manufacturing method thereof |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
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US12/232,019 Continuation-In-Part US20090008792A1 (en) | 2004-11-19 | 2008-09-10 | Three-dimensional chip-stack package and active component on a substrate |
US12/382,526 Division US8048716B2 (en) | 2004-11-19 | 2009-03-18 | Structure of embedded active components and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
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US20060110853A1 true US20060110853A1 (en) | 2006-05-25 |
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US11/252,572 Abandoned US20060110853A1 (en) | 2004-11-19 | 2005-10-19 | Structure of embedded active components and manufacturing method thereof |
US12/382,526 Expired - Fee Related US8048716B2 (en) | 2004-11-19 | 2009-03-18 | Structure of embedded active components and manufacturing method thereof |
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Application Number | Title | Priority Date | Filing Date |
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US12/382,526 Expired - Fee Related US8048716B2 (en) | 2004-11-19 | 2009-03-18 | Structure of embedded active components and manufacturing method thereof |
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US (2) | US20060110853A1 (en) |
TW (1) | TWI256694B (en) |
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WO2007137742A1 (en) * | 2006-06-01 | 2007-12-06 | Hahn-Schickard Gesellschaft Für Angewandte Forschung E.V. | Method for the production of an electronic subassembly, associated subassembly, and assembly comprising at least one such subassembly |
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US20110198743A1 (en) * | 2010-02-16 | 2011-08-18 | Ivan Nikitin | Method of Manufacturing a Semiconductor Device with a Carrier Having a Cavity and Semiconductor Device |
US8343810B2 (en) | 2010-08-16 | 2013-01-01 | Stats Chippac, Ltd. | Semiconductor device and method of forming Fo-WLCSP having conductive layers and conductive vias separated by polymer layers |
US20130120949A1 (en) * | 2011-11-16 | 2013-05-16 | Tien-Wei SUN | Method of manufacturing passive component module |
US20170236764A1 (en) * | 2016-02-16 | 2017-08-17 | Winbond Electronics Corp. | Electronic device package and manufacturing method thereof |
CN107170731A (en) * | 2017-05-05 | 2017-09-15 | 华为技术有限公司 | Embedded substrate and its manufacture method |
US11445617B2 (en) | 2011-10-31 | 2022-09-13 | Unimicron Technology Corp. | Package structure and manufacturing method thereof |
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Also Published As
Publication number | Publication date |
---|---|
TWI256694B (en) | 2006-06-11 |
TW200618127A (en) | 2006-06-01 |
US20090179347A1 (en) | 2009-07-16 |
US8048716B2 (en) | 2011-11-01 |
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