US20060035406A1 - Method of forming a composite polymer material inside trenches of a semiconductor substrate to form a composite polymer structure - Google Patents

Method of forming a composite polymer material inside trenches of a semiconductor substrate to form a composite polymer structure Download PDF

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Publication number
US20060035406A1
US20060035406A1 US10/918,371 US91837104A US2006035406A1 US 20060035406 A1 US20060035406 A1 US 20060035406A1 US 91837104 A US91837104 A US 91837104A US 2006035406 A1 US2006035406 A1 US 2006035406A1
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US
United States
Prior art keywords
substrate
polymer composite
forming
semiconductor substrate
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/918,371
Inventor
Bily Wang
Jonnie Chuang
Hui-Yen Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harvatek Corp
Original Assignee
Harvatek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harvatek Corp filed Critical Harvatek Corp
Priority to US10/918,371 priority Critical patent/US20060035406A1/en
Assigned to HARVATEK CORPORATION reassignment HARVATEK CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHUANG, JONNIE, HUANG, HUI-YUN, WANG, BILY
Priority to US11/081,527 priority patent/US7303984B2/en
Priority to US11/304,558 priority patent/US7662661B2/en
Publication of US20060035406A1 publication Critical patent/US20060035406A1/en
Abandoned legal-status Critical Current

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/44Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits
    • H05K3/445Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits having insulated holes or insulated via connections through the metal core
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0044Mechanical working of the substrate, e.g. drilling or punching
    • H05K3/0052Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/05Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/056Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09818Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09881Coating only between conductors, i.e. flush with the conductors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0228Cutting, sawing, milling or shearing
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0278Flat pressure, e.g. for connecting terminals with anisotropic conductive adhesive
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/15Position of the PCB during processing
    • H05K2203/1536Temporarily stacked PCBs

Definitions

  • the present invention has a main feature in that: the substrate and the polymer material are combined together, thereby to improve the material property of the substrate, provide lower equipment cost and not affect chip packaging process.

Abstract

A semiconductor substrate structure includes a substrate having a trench formed thereon, a polymer composite material supplied into the trench and an electroplate conductive layer formed on the substrate. Further, a semiconductor substrate processing method includes the steps of: providing a substrate forming a trench thereon, supplying a polymer composite material into the trench, polishing a surface of the substrate and forming a covering material on the surface of the substrate. Therefore, the method is provided for combining the polymer composite material into the substrate, thereby to raise cutting precision and strength of the semiconductor substrate structure.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a semiconductor substrate structure and processing method thereof, and more particularly, relates to a method for combining a polymer composite material into a substrate, thereby to raise cutting precision and strength of the semiconductor substrate structure.
  • 2. Description of the Related Art
  • In the electronic industry, the electronic packaging industry will gradually get important due to electronic products which are required in light, thin, short, small and high function besides the semiconductor industry. The packaging technique in the electronic packaging industry will find new ways of doing things from old theories, such as a ball gate array package, a plastic pingrid array package, TQFP, TSOP, etc.
  • In a conventional electronic packaging technique, a semiconductor integrated circuit is manufactured and then assembled with other electronic elements to become an electronic product for achieving a specific design function. The electronic packaging technique provides four main functions, which respectively are power distribution, signal distribution, heat dissipation, and protection and support, applying to IC chap packaging and LED packaging.
  • The electronic packaging technique can be divided into different levels, as follows. A first level packaging (or chip level packaging) is provided for combining the IC chip with the packaging structure to form an electronic module. In plastic dual-in-line package (PDIP), the first level packaging includes die attach, wire bond and encapsulation. A second level packaging is provided for assembling the electronic module on the circuit board to form a circuit card or a printed circuit board. In the second level packaging, it is noticed to manufacture of the circuit board and connection technique between the electronic elements and the circuit board, such as a pin through hole (PTH) and a surface mount technology (SMT). A third and fourth level packages are provided for combination of the circuit board and the circuit card to form 1o sub-system and system.
  • Referring to FIG. 1, a conventional metal substrate 1 a will be cut by a cutter 12 a. When cutting, the conventional metal substrate 1 a will have some cutting questions due to the structure strength and the cutting precision, thereby to easily produce-cutting bur and structure deformation. Further, it will affect the cutting speed and precision, thereby to increase defective fraction of the packaging product.
  • The present invention has been conceived to solve the problem in the background art, and the object of the present invention is to provide a method for combining the substrate with the polymer composite material, thereby to raise cutting precision and strength of the semiconductor substrate structure.
  • SUMMARY OF THE INVENTION
  • It is therefore a principal object of the present invention to provide a semiconductor substrate structure, which can obtain better structure strength so as to easily be cut and keep better cutting precision.
  • Another object of the present invention is to provide a semiconductor substrate processing method, which can obtain lower cost and high quality of packaging processing.
  • To achieve the above object, one feature of the present invention is provided for a semiconductor substrate structure including a substrate having a trench formed thereon, a polymer composite material supplied into the trench and an electroplate conductive layer formed on the substrate.
  • Wherein a height of the polymer composite material projected from an upper surface of the substrate is lower than that of the electroplate-conductive layer.
  • The present invention provides a semiconductor substrate processing method including the steps of: (1) providing a substrate forming a trench thereon; (2) supplying a polymer composite material into the trench; (3) polishing a surface of the substrate; and (4) forming a covering material on the surface of the substrate.
  • To provide a further understanding of the invention, the following detailed description illustrates embodiments and examples of the invention, this detailed description being provided only for illustration of the invention.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The drawings included herein provide a further understanding of the invention. A brief introduction of the drawings is as follows:
  • FIG. 1 is a schematic view of a conventional substrate structure in a cutting condition;
  • FIGS. 2A-2D are cross-sectional views illustrating a sequence of steps for a semiconductor substrate-processing method in accordance with a first embodiment of the present invention;
  • FIGS. 3A-3D are cross-sectional views illustrating a sequence of steps for a substrate processing method in accordance with a second embodiment of the present invention;
  • FIG. 4 is a perspective view of a substrate after etching process; and
  • FIG. 5 is a perspective view of the substrate combined with the polymer composite material.
  • DETAILED DESCRIPTION OF THE EMBODIMENTS
  • Referring now to the drawings wherein the showings are for purposes of illustrating preferred embodiments of the present invention only, and not for purposes of limiting the same, FIGS. 2A-2D and FIGS. 3A-3D are cross-sectional views each illustrating a sequence of steps for substrate processing method in accordance with two embodiments of the present invention.
  • Please refer to FIGS. 2A-2D, a semiconductor substrate processing method includes the steps of: (1) providing a substrate 1 forming a trench 14 thereon by means of a chemical etching process; (2) roughing a surface of the substrate by means of a chemical process or a sand-blasting manner for effectively combining polymer composite materials; (3) supplying a polymer composite material 12 (such as a polyethylene material, PE) into the trench 14 by means of a screen printing manner or a steel plate printing manner; (4) polishing or sand-blasting the surface of the substrate for polishing the polymer composite material 12 spilled on the surface of the substrate; and (5) forming a covering material 13 on the surface of the substrate by means of a surface electroplating process.
  • Please refer to FIGS. 3A-3D, a substrate processing method for a semiconductor includes the steps of. (1) providing two substrates 2 each forming a trench 24 thereon by means of a chemical etching process; (2) roughing a surface of the substrate 2 by means of a chemical process or a sand-blasting manner for effectively combining polymer composite materials on the surface of the substrate 2; (3) placing a polymer thin plate 22 (such as a polypropylene material, PP) between the two substrates 2; (4) supplying a polymer composite material 23 melted into the trench 24 in a high temperature and pressure condition; and (5) polishing or sand-blasting the surface of the substrate for polishing the polymer composite material 12; thereby to obtain the better substrate structure strength.
  • The present invention provides a semiconductor substrate structure including a substrate 1 having a trench 14 formed thereon, a polymer composite material 12 supplied into the trench 14 and an electroplate conductive layer 13 formed on the substrate 1 (see FIGS. 2A-2D). Further, a height of the polymer composite material 12 projected from the surface of the substrate is lower than that of the electroplate conductive layer 13.
  • In addition, the present invention provides a semiconductor substrate structure including two substrate 2 (first and second substrates) each having a trench 24 formed thereon, a polymer thin plate 22 placed between the first substrate and the second substrate, and a polymer composite material 23 supplied into the trench 24 (see FIGS. 3A-3D). The polymer thin plate 22 is made of a polypropylene material.
  • FIG. 4 shows a perspective view of three substrates after a chemical etching-process. FIG. 5 shows a perspective view of a semiconductor substrate structure in accordance with first embodiment of the-present invention after the polymer composite material 12 supplied into the trench 14.
  • The present invention has a main feature in that: the substrate and the polymer material are combined together, thereby to improve the material property of the substrate, provide lower equipment cost and not affect chip packaging process.
  • The mechanical equipments for applying the polymer composite material supplied into the trench of the substrate or polishing the surface of the. substrate will not need the high cost, thereby easy to obtain or install. The semiconductor substrate structure of the present invention is a strong structure and to be cut easily. Further, the process method of the present invention will not affect the original packaging process, and it can be operated into the original packaging process due to the unchanged packaging machine to achieve the present requirement.
  • The present invention has following advantages: (1) to easily arrange new manufacturing process, so that the requirement of price and technique of new equipment is not high; (2) the mechanical strength of the substrate is better; (3) to be cut easily; and (4) the original packaging machine still can be used in the original packaging process. While the preferred embodiment in accordance with the present invention has been shown and described, and the alternative embodiment has been described, equivalent modifications and changes known to persons skilled in the art according to the spirit of the present invention are considered to be within the scope of the present invention as defined in the appended claims.

Claims (7)

1. A method of forming a substrate for increasing cutting precision and strength thereof, comprising the steps of:
providing a substrate;
chemically etching a plurality of trenches in the substrate,
filling a polymer composite material into the trenches to form a substrate having a polymer composite structure;
polishing a surface of the polymer composite structure substrate; and
forming a conductive covering material on a surface of the polymer composite structure substrate subsequent to the polishing step.
2. (canceled)
3. The method of claim 1, wherein the step of filling is preceded by the step of roughing a surface of the substrate by means of a chemical process or a sand-blasting process.
4. The method of claim 1, wherein the step of filling includes the step of applying the polymer composite material using a screen printing process or a steel plate printing process.
5. The method of claim 1, wherein the step of forming a conductive covering material includes the step of electroplating a conductive layer onto a surface of the polymer composite structure substrate.
6-9. (canceled)
10. The method of claim 1, wherein the step of providing a substrate includes the step of providing a semiconductor substrate.
US10/918,371 2004-08-16 2004-08-16 Method of forming a composite polymer material inside trenches of a semiconductor substrate to form a composite polymer structure Abandoned US20060035406A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/918,371 US20060035406A1 (en) 2004-08-16 2004-08-16 Method of forming a composite polymer material inside trenches of a semiconductor substrate to form a composite polymer structure
US11/081,527 US7303984B2 (en) 2004-08-16 2005-03-17 Semiconductor substrate structure and processing method thereof
US11/304,558 US7662661B2 (en) 2004-08-16 2005-12-16 Method of manufacturing a substrate structure for increasing cutting precision and strength thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/918,371 US20060035406A1 (en) 2004-08-16 2004-08-16 Method of forming a composite polymer material inside trenches of a semiconductor substrate to form a composite polymer structure

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US11/081,527 Division US7303984B2 (en) 2004-08-16 2005-03-17 Semiconductor substrate structure and processing method thereof
US11/304,558 Continuation-In-Part US7662661B2 (en) 2004-08-16 2005-12-16 Method of manufacturing a substrate structure for increasing cutting precision and strength thereof

Publications (1)

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US20060035406A1 true US20060035406A1 (en) 2006-02-16

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US10/918,371 Abandoned US20060035406A1 (en) 2004-08-16 2004-08-16 Method of forming a composite polymer material inside trenches of a semiconductor substrate to form a composite polymer structure
US11/081,527 Expired - Fee Related US7303984B2 (en) 2004-08-16 2005-03-17 Semiconductor substrate structure and processing method thereof

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111654974A (en) * 2019-03-04 2020-09-11 北大方正集团有限公司 Cutting method and system for flexible substrate PCB

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5456797A (en) * 1993-01-14 1995-10-10 Robert Bosch Gmbh Method of planarizing trench structures
US5473120A (en) * 1992-04-27 1995-12-05 Tokuyama Corporation Multilayer board and fabrication method thereof
US5577309A (en) * 1995-03-01 1996-11-26 Texas Instruments Incorporated Method for forming electrical contact to the optical coating of an infrared detector
US5832599A (en) * 1995-03-15 1998-11-10 Northrop Grumman Corporation Method of interfacing detector array layers
US6555762B2 (en) * 1999-07-01 2003-04-29 International Business Machines Corporation Electronic package having substrate with electrically conductive through holes filled with polymer and conductive composition
US20040043607A1 (en) * 2002-08-29 2004-03-04 Farnworth Warren M. Methods for creating electrophoretically insulated vias in semiconductive substrates and resulting structures

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1041624A1 (en) * 1999-04-02 2000-10-04 Interuniversitair Microelektronica Centrum Vzw Method of transferring ultra-thin substrates and application of the method to the manufacture of a multilayer thin film device
WO2005031863A1 (en) * 2003-09-26 2005-04-07 Tessera, Inc. Structure and method of making capped chips having vertical interconnects
US7094661B2 (en) * 2004-03-31 2006-08-22 Dielectric Systems, Inc. Single and dual damascene techniques utilizing composite polymer dielectric film

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5473120A (en) * 1992-04-27 1995-12-05 Tokuyama Corporation Multilayer board and fabrication method thereof
US5456797A (en) * 1993-01-14 1995-10-10 Robert Bosch Gmbh Method of planarizing trench structures
US5577309A (en) * 1995-03-01 1996-11-26 Texas Instruments Incorporated Method for forming electrical contact to the optical coating of an infrared detector
US5832599A (en) * 1995-03-15 1998-11-10 Northrop Grumman Corporation Method of interfacing detector array layers
US6555762B2 (en) * 1999-07-01 2003-04-29 International Business Machines Corporation Electronic package having substrate with electrically conductive through holes filled with polymer and conductive composition
US20040043607A1 (en) * 2002-08-29 2004-03-04 Farnworth Warren M. Methods for creating electrophoretically insulated vias in semiconductive substrates and resulting structures

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111654974A (en) * 2019-03-04 2020-09-11 北大方正集团有限公司 Cutting method and system for flexible substrate PCB

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Publication number Publication date
US7303984B2 (en) 2007-12-04
US20060035407A1 (en) 2006-02-16

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Legal Events

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AS Assignment

Owner name: HARVATEK CORPORATION, TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WANG, BILY;CHUANG, JONNIE;HUANG, HUI-YUN;REEL/FRAME:015707/0104

Effective date: 20040809

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION