US20050252454A1 - Contaminant reducing substrate transport and support system - Google Patents
Contaminant reducing substrate transport and support system Download PDFInfo
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- US20050252454A1 US20050252454A1 US11/065,702 US6570205A US2005252454A1 US 20050252454 A1 US20050252454 A1 US 20050252454A1 US 6570205 A US6570205 A US 6570205A US 2005252454 A1 US2005252454 A1 US 2005252454A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
Abstract
A lifting assembly can lift a substrate from a substrate support and transport the substrate. The lift assembly has a hoop sized to fit about a periphery of the substrate support, and a pair of arcuate fins mounted on the hoop, each arcuate fin comprising a pair of opposing ends having ledges that extend radially inward, each ledge having a raised protrusion to lift a substrate so that the substrate contacts substantially only the raised protrusion, thereby minimizing contact with the ledge, when the pair of fins is used to lift the substrate off the substrate support. The lifting assembly and other process chamber components can have a diamond-like coating having interlinked networks of (i) carbon and hydrogen, and (ii) silicon and oxygen. The diamond-like coating has a contact surface having a coefficient of friction of less than about 0.3, a hardness of at least about 8 GPa, and a metal concentration level of less than about 5×1012 atoms/cm2 of metal. The contact surface reduces contamination of a substrate when directly or indirectly contacting a substrate.
Description
- This application is a continuation of U.S. patent application Ser. No. 10/786,876, entitled “Coating for Reducing Contamination of Substrates During Processing” to Parkhe et al, assigned to Applied Materials, Inc. and filed on Feb. 24, 2004, which is herein incorporated by reference in its entirety.
- Embodiments of the present invention relate to components used in the transportion and support of substrates in process chambers.
- Electronic circuits of CPUs, displays and memories, are fabricated in a process chamber by depositing or forming materials on a substrate and then selectively etching the materials. The substrate includes semiconductor wafers and dielectric boards. The substrate materials are deposited or formed by processes such as chemical vapor deposition (CVD), physical vapor deposition (PVD), oxidation, nitridation and ion implantation. The substrate materials are then etched to define electrical circuit lines, vias, and other features on the substrate. A typical process chamber has enclosure walls that enclose a substrate support, gas distributor and exhaust port, and can also include a gas energizer to energize process gas in the chamber by high frequency (RF) or microwave energy.
- The contact surfaces of transport and support structures contact the substrate during its transportation and support in a typical process cycle. Typically, a substrate is transported from a substrate stack in a cassette within a load-lock chamber to a process chamber on a transport blade operated by a robot arm. The transported substrate is placed on a set of lift pins which are lowered though holes in a substrate support to rest the backside of the substrate on the receiving surface of a substrate support. The substrate support can include a pedestal, a vacuum chuck having a vacuum port to suck down the substrate, or an electrostatic chuck comprising a dielectric covering an electrode to which a voltage is applied to generate an electrostatic force to hold the substrate. In some processes, the substrate is also initially transported and rested on a degassing heater plate to degas the substrate. The substrate may also be transferred to a cool-down pedestal to cool the substrate after rapid thermal processing or other high temperature processes. Shutter discs can also be used to protect the receiving surface of a substrate support when the substrate is not being held on the support.
- The contact surfaces that contact the substrate, directly or indirectly, can contaminate the substrate surface with contaminant particulates. For example, stainless steel surfaces of a substrate support pedestal, cool down plate, or degas heater, can leave behind trace amounts of iron, chromium or copper on the backside surfaces of the substrate. Nickel coated robotic blades can also contaminate the substrate with residual nickel particles when they are used to lift and transport the substrate. Similarly, aluminum pedestals can leave behind aluminum particulates on the backside surface of a substrate. Although the particulate contaminants are often deposited on the inactive backside surface of the substrate, they can diffuse to the active front side in subsequent high temperature annealing processes, causing shorts or failure of the circuits or displays formed on the substrate. The backside edge of the substrate may have a particularly high number of contaminants particles, due to abrasion of the backside edge with transport components such as robotic transfer blades and lifting assemblies. The contaminants can also flake off from the substrate and fall upon and contaminate other substrates. These contaminants eventually reduce the effective yields of circuits or displays obtained from the substrate.
- Thus, it is desirable to reduce contamination of the backside of the substrate to increase substrate yields and process efficiency.
- In yet another version, a substrate transfer arm capable of transferring a substrate into and out of a process chamber has a transfer blade, and a diamond-like coating on the transfer blade. The diamond-like coating has interlinked networks of (i) carbon and hydrogen, and (ii) silicon and oxygen, and the diamond-like coating has a contact surface having (i) a coefficient of friction of less than about 0.3, (ii) a hardness of at least about 8 GPa, and (iii) a metal concentration level of less than about 5×1012 atoms/cm2 of metal. The contact surface reduces contamination of a substrate when directly or indirectly contacting a substrate.
- In another version, a support pedestal capable of reducing particulate contamination of a substrate has a pedestal structure having a disc with a recessed peripheral ledge, and a diamond-like coating on the body. The diamond-like coating has interlinked networks of (i) carbon and hydrogen, and (ii) silicon and oxygen. The diamond-like coating has a contact surface having (i) a coefficient of friction of less than about 0.3, (ii) a hardness of at least about 8 GPa, and (iii) a metal concentration level of less than about 5×1012 atoms/cm2 of metal. The contact surface reduces contamination of a substrate when directly or indirectly contacting a substrate.
- In yet another version, a substrate lifting assembly is adapted to lift a substrate from a substrate support and transports the substrate. The lifting assembly has a hoop sized to fit about a periphery of the substrate support, and a pair of arcuate fins mounted on the hoop. Each arcuate fin has a pair of opposing ends having ledges that extend radially inward, each ledge having a raised protrusion to lift a substrate so that the substrate contacts substantially only the raised protrusion. Thus, contact with the ledge is minimized when the pair of fins is used to lift the substrate off the substrate support.
- In yet another version, a heat exchanging support has a body having a substrate receiving surface with a pattern of grooves and a diamond-like coating covering the substrate receiving surface, the diamond-like coating having a network of carbon, hydrogen, silicon and oxygen. The substrate receiving surface has a pattern of grooves thereon. The heat exchanging support also has a heat exchanger.
- In yet another version, a substrate transport system transports a substrate onto a substrate support in a process chamber. The transport system has a transfer arm to transport the substrate into the chamber, a detector to detect a position of the transfer arm in the chamber and generate a signal in relation to the position, a lifting assembly adapted to receive the substrate from the transfer arm and lower the substrate onto the support, and a controller having program code to control the transfer arm, detector, and transport blade to transport the substrate onto the substrate support. The program code has substrate centering control code to control the movement of the substrate transfer arm to position the substrate over substantially the center of the support by (1) receiving the signal from the detector and determining the position of the substrate in the process chamber, (2) calculating an offset distance comprising a difference between the detected position of the substrate and the center of the process chamber, and (3) generating a control signal in relation to the offset distance to control the movement of the transfer arm to position the substrate substantially over the center of the support.
- In yet another version, a substrate processing apparatus has a process chamber having a gas supply, a gas energizer, a substrate support to support the substrate in the chamber, the support having a body with a disc having a recessed peripheral ledge, a gas exhaust, and a lifting assembly to lift a substrate from the support. The lifting assembly has (1) a hoop sized to fit about a periphery of the substrate support, and (2) a pair of arcuate fins mounted on the hoop, each arcuate fin having a pair of opposing ends having ledges that extend radially inward, each ledge having a raised protrusion to lift a substrate so that the substrate contacts substantially only the raised protrusion, thereby minimizing contact with the ledge, when the pair of fins is used to lift the substrate off the substrate support. The apparatus also has a transfer arm to transport the substrate into the chamber, a detector to detect a position of the transfer arm in the chamber and generate a signal in relation to the position, and a controller comprising program code to control the gas supply, gas energizer, support, lifting assembly, transfer arm and detector to transport the substrate into the process chamber and onto the substrate support. The program code has substrate centering control code to control the movement of the substrate transfer arm to position the substrate over substantially the center of the support by (1) receiving the signal from the detector and determining the position of the substrate in the process chamber, (2) calculating an offset distance comprising a difference between the detected position of the substrate and the center of the process chamber, and (3) generating a control signal in relation to the offset distance to control the movement of the transfer arm to position the substrate substantially over the center of the support.
- In still another version, a multi-chamber substrate processing apparatus has (i) a transfer chamber having a transfer arm to transfer a substrate between chambers, (ii) a heating chamber to heat the substrate, the heating chamber having a heating pedestal to support the substrate thereon, (iii) a pre-clean chamber to clean a substrate by exposing the substrate to an energized gas, the pre-clean chamber having a pre-clean support to support the substrate thereon, (iv) a deposition chamber to deposit a material on the substrate, the deposition chamber having a deposition support to support the substrate thereon, (v) a cool-down chamber to cool the substrate, the cool-down chamber having a cooling pedestal to support the substrate thereon, (vi) one or more lifting assemblies in the chamber to raise and lower the substrate onto at least one of the pedestals and supports, and (vii) a controller adapted to control the transfer arm and lifting assemblies to transport the substrate into each of the chambers and place the substrate on the pedestals and supports. At least one of the transfer arm, lifting assemblies, heating pedestal, cooling pedestal, pre-clean support and deposition support have a coating having a contamination-reducing material. A substrate that is transferred by the transfer arm to each chamber, raised by the lifting assemblies, and processed on the pedestals and supports in each chamber, has a metal contamination level of less than about 1×1011 atoms/cm2.
- These features, aspects, and advantages of the present invention will become better understood with regard to the following description, appended claims, and accompanying drawings, which illustrate examples of the invention. However, it is to be understood that each of the features can be used in the invention in general, not merely in the context of the particular drawings, and the invention includes any combination of these features, where:
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FIG. 1 is a sectional side view of an embodiment of a substrate support having a plurality of mesas comprising a contamination reducing coating; -
FIG. 2 a is a sectional side view of an embodiment of a heating pedestal having a contamination reducing coating; -
FIG. 2 b is a sectional side view of an embodiment of a cooling pedestal with a contamination reducing coating; -
FIG. 3 is a sectional side view of an embodiment of a lift pin assembly having lift pins with a contamination reducing coating; -
FIG. 4 is a sectional side view of an embodiment of a shutter having a contamination reducing coating; -
FIG. 5 is a sectional side view of an embodiment of a component having a protective cap comprising a base layer covered by a contamination reducing coating; -
FIG. 6 is a sectional top view of an embodiment of multi-chamber apparatus; -
FIG. 7 a is a sectional side view of an embodiment of a component processing chamber; -
FIG. 7 b is a sectional side view of an embodiment of a substrate processing chamber; -
FIG. 8 is a top view of an embodiment of a support having a pattern of grooves formed therein; -
FIG. 9 a is top view of an embodiment of a support having a recessed peripheral ledge; -
FIG. 9 b is a sectional side view of an embodiment of the support ofFIG. 9 a having a substrate thereon; -
FIG. 10 a is a side view of an embodiment of a lifting assembly having arcuate fins, and a support having a pattern of grooves; -
FIG. 10 b is a top view of an embodiment of an arcuate fin from the lifting assembly ofFIG. 10 a; and -
FIG. 11 is a side view of an embodiment of a transport system having a detector to detect a position of a substrate. - In the substrate processing methods,
substrates 104 are transported and held byvarious support components 20. For example, asubstrate 104 may be held during processing in achamber 106 on asupport component 20 that is asubstrate support 100, and which has an asupport structure 25 that can also serve as anelectrostatic chuck 102 as shown inFIG. 1 . Thesubstrate 104 may also be supported by asupport component 20 comprising asupport structure 25 that is aheat exchange pedestal 150, such as aheating pedestal 151 or coolingpedestal 152, as illustrated inFIGS. 2 a and 2 b, that is used to degas asubstrate 104 by heating it, or to cool asubstrate 104 after a high temperature process. Further types ofsupport components 20 includesupport structures 25 suitable for transporting the substrate, such as lift pins 160 as shown inFIG. 3 , and robotic arms having robot blades, can be used to place and removesubstrates 104 onsupports 100, as well as to transfersubstrates 104 betweenchambers 106 in amulti-chamber apparatus 101. Yet anothersupport component 20 is asupport shutter 180, as shown inFIG. 4 , to cover a portion of thesubstrate support 100 when thesubstrate 104 is not present during a chamber cleaning process. It should be understood that the various embodiments ofsupport components 20 that are described herein are provided to illustrate the invention, and should not be used to limit the scope of the present invention, and that other versions of support components apparent to those of ordinary skill are also within the scope of the present invention. - The processing yields of
substrates 104 is substantially improved withsupport components 20 having contact surfaces 22 capable of reducing, and even eliminating, the formation and/or deposition of contaminant residues that arise from frictional and abrasive forces between thecontact surface 22 of thesupport component 20 and thesubstrate 104. For example, when thecomponent 20 is made from a metal containing material, metal contaminant particles deposit on thesubstrate 104 when thesubstrate 104 rubs against thecontact surface 22 of thesupport component 20. It has been found that the frictional residues have larger particle sizes or numbers, when thecontact surface 22 is excessively soft, has a high frictional coefficient causing abrasion of the surfaces, or has a high level of impurities. To reduce such contamination, the contact surfaces 22 of thesupport component 20 are provided with asurface coating 24 that has desirable abrasion or hardness, frictional properties, and/or low-levels of contaminants. The contact surfaces 22 comprising thecoating 24 desirably reduce the contamination ofsubstrates 104 when directly or even indirectly contacting thesubstrates 104. For example, asupport shutter 180 having thecontact surface 22 on thecontamination reducing coating 24 may indirectly reduce the contamination ofsubstrates 104 by reducing the contamination of asupport surface 28 on whichsubstrates 104 are placed. Thecontamination reducing coating 24 may cover at least a portion of asurface 26 of acomponent structure 25, as shown for example inFIG. 2 a, or may even cover substantially the entire surface that is in contact with thesubstrate 104. Thecoating 24 is also sufficiently thick to protect thesubstrate 104 from contamination by the underlying support structure, for example thecoating 24 may comprise a thickness of at least about 0.02 microns, such as from about 0.02 microns to about 1000 microns, and even about 0.02 microns to about 20 microns, such as from about 1 to about 20 microns, and even about 1.5 microns. The coating thickness may also be selected to provide good resistance to wearing of the coating by contact with thesubstrate 104. - In one version, the contamination reducing coating comprises a material having a coefficient of friction that is sufficiently low to reduce the formation and deposition of friction or abrasion resulting particulates on the
substrate 104. The low-friction material can improve substrate processing yields by contacting thesubstrate 104 only with a low-friction material that is less likely to flake or “rub-off” thesurface 22 and deposit onto thesubstrate 104. The low-friction material suitable for thesurface 22 desirably comprises a coefficient of friction of less than about 0.3, such as from about 0.05 to about 0.2. The coefficient of friction is the ratio of the limiting frictional force to the normal contact force when moving thesurface 22 relative to another surface. By comparison, a supporting surface of aheating pedestal 151 made of stainless steel, and without the aforementioned coating, can have a coefficient of friction of at least about 0.7. The contamination reducing coating further comprises a low average surface roughness, such as for example, an average surface roughness of less than about 0.4 micrometers. The lower surface roughness makes thecontact surface 22 of the coating less likely to catch or tear out thesubstrate 104 when the substrate is transferred onto or off thecontact surface 22. - The contamination reducing coating also desirably has a high hardness to provide better resistance to scratching and abrasion by the
substrate 104. When the substrate is a relatively hard material, it is desirable for thecontact surface 22 to also be composed of a material having a relatively high hardness to be less likely to generate loose particles or flakes due to scratching of thesurface 22. A suitable contamination reducing coating may comprise a hardness of at least about 8 GPa, such as from about 8 Gpa to about 25 Gpa, and even at least about 10 GPa, such as from about 18 Gpa to about 25 GPa. Thesurface 22 desirably comprises a hardness that is selected with respect to thesubstrate 104 being processed. For example, thesurface 22 of a component for processing asubstrate 104 comprising a semiconductor wafer may have a hardness that is different than the hardness of asurface 22 for processing asubstrate 104 comprising a dielectric glass panel used for displays. - The hardness of the
surface 22 can be measured by, for example, a hardness load and displacement indentation test. A suitable instrument for performing the hardness test may be, for example, a “Nano Indenter II” available from Nano Instruments, Inc. in Oak Ridge, Tenn. In this test, the tip of an indenter probe is placed against thesurface 22, and a load is applied to the indenter probe that presses the tip into thesurface 22 and forms an indentation in thesurface 22. The tip of the indenter probe can be, for example, pyramidal shaped, and a suitable load may be in the microgram range. The hardness of thesurface 22 can be found by evaluating the indentation, for example, by taking a ratio of the force applied to the indenter probe divided by the area of the indentation that results from the force, as described for example in Review of Instrumented Indentation in the Journal of Research of the National Institute of Standards and Technology, Vol. 108, No. 4, July-August 2003, which is herein incorporated by reference in its entirety. The area of the indentation can be calculated, for example, optically or by monitoring a depth of the indenter probe in the surface and using a known geometry of the tip of the indenter probe. - It is further desirable for the
contact surface 22 to have low levels of contamination-reducing metals that have a high purity with a low concentration of impurities, especially metal impurities such as Fe, Cr, Ni, Co, Ti, W, Zn, Cu, Mn, Al, Na, Ca, K and B. The metal impurities can rub off on and migrate from the surfaces of supporting components and into the substrates to contaminate the substrates. Suitable contamination reducing coatings have a metal concentration level of less than about 5×1012 atoms/cm2 of metal atoms at thesurface 22 of the coating, or even less than about 5×1010 atoms/cm2 of metal atoms. The contamination-reducing material is also desirably resistant to corrosion by energized process gases. While a coating comprising a ceramic material having the desired low levels of metal atoms can be applied to a metal or ceramic support structure to reduce its contaminating effect on a substrate, the surface of a ceramic support component, such as ceramic electrostatic chuck having an embedded electrode can also be treated to clean the surface to reduce the contaminant levels of the surface. - The
contamination reducing coating 24 can also be tailored to have provide good adhesion to theunderlying support structure 25 by controlling, for example, the coating thickness, coefficient of thermal expansion, or tensile strength. For example, thecoating 24 comprising the contamination reducing coating desirably comprises a thermal coefficient of expansion that is sufficiently matched to the expansion coefficient of theunderlying component 22 to reduce cracking or spalling of thecoating 24 from thecomponent 22. A coefficient that is too high or too low can result in cracking and de-lamination of thecoating 24 from the structure as a result of unequal expansion/contraction rates of the coating and underlying structure materials during heating or cooling of thecomponent 22. The thickness of thecoating 24 can also affect the adhesion of thecoating 24. For example, for an underlying structure comprising aluminum nitride, asuitable coating 24 comprising the contamination reducing coating may comprise a coefficient of thermal expansion of from about 4 ppm to about 6 ppm per degree Celsius. For an underlying structure comprising a metal such as aluminum or stainless steel, asuitable coating 24 of contamination reducing coating may comprise a similar coefficient of thermal expansion of from about 4 ppm to about 6 ppm, and may also comprise a reduced thickness to inhibit spalling of thecoating 24. - In one version, the contamination-reducing material comprises a diamond-like material, such a diamond-like carbon (also referred to as DLC.) Diamond-like materials are carbon-based materials with a network of carbon and hydrogen atoms. They typically have a significant fraction of sp3 hybridized carbon, such as at least about 50% sp3 hybridized carbon to at least about 98% sp3 hybridized carbon. Thus, many of the carbon atoms in the network are be bonded to other carbon or hydrogen atoms in several directions, similar to diamond, as opposed to being substantially limited to bonding to atoms that are in the same plane, as in graphite. However, the bonded carbon atoms have only a short range order in the form of micro-crystals or crystallites, and typically do not form a full three-dimensional crystalline lattice of diamond having a long range order. Depending on the fabrication conditions, the diamond-like materials can be amorphous or can contain crystallites with nanoscale sizes. The diamond-like materials can also contain a significant amount of hydrogen, such as a content of at least about 2 atom % of hydrogen, for example from about 2 atom % to about 25 atom % of hydrogen. Diamond-like carbon (DLC) also has a high hardness and a low coefficient of friction that can reduce the contamination of
substrates 104 fromsurfaces 22 having the materials. For example, the diamond-like carbon material can have a hardness of at least about 18 GPa, such as from about 18 GPa to about 25 GPa. The coefficient of friction of the surface of the diamond-like carbon is also desirably low, such as a coefficient of less than about 0.3, such as from about 0.05 to about 0.2. The diamond-like carbon material can also comprise a low surface roughness, such as an average surface roughness of less than about 0.4 micrometers, such as from about 0.05 to about 0.4 micrometers. The diamond like-carbon can also be manufactured with a low amount of metal impurities, such as less than about 5×1012 atoms/cm2 of metal impurities, and even less than about 5×1011 atoms/cm2 of metal atoms. For example, the material can comprise a concentration of titanium atoms of less than about 10 atom %, and even less than about 6 atom % of titanium. Thus, diamond-like materials such as diamond-like carbon provide characteristics such as a low coefficient of friction, high hardness and high purity that are desirable for contamination-reducing materials on surfaces 22. - In one version, the diamond-like carbon materials are formed as
coatings 24 over underlying components surfaces 26 to provide a metal contamination reducing component surface. Acoating 24 of the diamond-like carbon materials can be formed by methods including chemical vapor deposition, carbon ion beam deposition, ion-assisted sputtering from graphite and laser ablation of graphite. An example of a method of depositing a diamond-like carbon coating layer by a chemical vapor deposition method is described in U.S. Pat. No. 6,228,471 to Neerinck et al, PCT filed Jan. 23, 1998, assigned to N. V. Bekaert S. A., which is herein incorporated by reference in its entirety. The fabrication process can be controlled to tailor the properties of the resulting coating. For example, the fabrication conditions can be controlled to tailor the amount of hydrogen incorporated into thecoating 24. Also, the fabrication conditions can be controlled to tailor the electrical properties of thecoating 24, for example to provide electrical properties that may be desirable for anelectrostatic chuck 102. For example, the electrical resistivity of thecoating 24 can be controlled by controlling the proportion of sp3 to sp2 hybridized carbon atoms. A higher proportion of sp3 hybridized carbon atoms gives a higher resistivity, while a higher proportion of sp2 hybridized carbon atoms gives a lower resistivity. - In another version, the contamination reducing coating can comprise a diamond-like material comprising a diamond-like nanocomposite having both (i) networks of carbon and hydrogen, and (ii) networks of silicon and oxygen. The diamond-like nanocomposite is similar to the diamond like carbon, in that it comprises a network of bonded carbon atoms of which a substantial fraction are sp3 hybridized but does not have a substantially long-range order as in pure diamond, and can further comprise bonded hydrogen atoms. Depending on the fabrication conditions, the diamond-like nanocomposite can be fully amorphous or can contain diamond crystallites, for example, at the nanoscale level. The diamond-like nanocomposite comprises a networks of silicon bonded oxygen that interpenetrate the carbon networks in a substantially random fashion, to form a composite material having high temperature stability, high hardness and a low coefficient of friction. The percentage of each of C, H, Si and O atom in the nanocomposite can be selected to provide the desired composition characteristics. A suitable diamond-like nanocomposite may comprise a composition of, for example, from about 50 atom % to about 90 atom % carbon, from about 5 atom % to about 10 atom % hydrogen, from about 10 atom % to about 20 atom % silicon and from about 5 atom % to about 10 atom % oxygen. The diamond-like nanocomposites may comprise a low coefficient of friction of less than about 0.3, such as from about 0.05 to about 0.2, and a low average surface roughness of less than about 0.4 micrometers, such as from about 0.05 micrometers to about 0.4 micrometers, and even less than about 0.1 micrometers. The diamond-like nanocomposite may also comprise a microhardness of at least about 8 GPa, such as from about 8 to about 18 GPa. The diamond-like nanocomposite may also comprise a high purity, for example, the diamond-like nanocomposite can comprise less than about 5×1012 atoms/cm2 and even less than about 5×1011 atoms/cm2 of metal impurities. For example, the material can comprise less than about 10 atom % of metal impurities such as titanium, and even less than about 7 atom % of titanium.
- In one version, a
coating 24 comprising the diamond-like carbon materials may further comprise a wear factor that provides reduced wear of thecoating 24 when used to processsubstrates 104. The wear factor is a measure of the amount of wear experienced by a surface when slid or rubbed along another surface. The wear factor can be obtained, for example, by sliding the surface against a reference surface and measuring the slope of the volume loss of a linear region versus the sliding distance, typically while maintaining the normal load and sliding speed constant. A suitable wear factor for acoating 24 comprising a diamond like nanocomposite may be, for example, less than about 5×10−6 mm3/Nm. - The diamond-like nanocomposite can be formed by methods similar to those described for diamond-like carbon materials, including by a chemical vapor deposition method, and can be formed as a
coating 24 on thecomponent 20. Examples of methods of forming diamond-like nanocomposite coatings is described, for example, in U.S. Pat. No. 5,352,493 to Dorfman et al, filed Oct. 4, 1994, assigned to Veniamin Dorfman, and U.S. Pat. No. 6,228,471 to Neerinck et al, PCT filed Jan. 23, 1998, assigned to N. V. Bekaert S. A., both of which are herein incorporated by reference in their entireties. The diamond-like nanocomposite material can also be commercially available materials such as DLN or Dylyn® from Bekaert Advanced Coating Technologies, Belgium. - The diamond-like materials, including diamond-like carbon and diamond-like nanocomposites, can also be tailored by incorporating metal additives into the materials. The metal additives can be added to provide desired properties, such as a desired electrical resistivity or conductance of the material. The metal additives are distributed about the diamond-like material, and may even form a separate bonded metal network that interpenetrates at least one of the carbon and a silicon networks. Suitable metal additives may comprise, for example, at least one of B, Li, N, Si, Ge, Te, Mo, W, Ta, Nb, Pd, Ir, Pt, V, Fe, Co, Mg, Mn, Ni, Ti, Zr, Cr, Re, Hf, Cu, Ag and Au. The diamond-like material can comprise from about 0.1 atom % to about 10 atom % of the metal additive, such as for example, titanium. The diamond-like material having the metal additives also comprises a relatively low coefficient of friction and relatively high hardness. For example a diamond-like nanocomposite comprising C:H and Si:O networks having metal additives can comprise a coefficient of friction of less than about 0.3, such as from about 0.05 to about 0.2. The diamond-like nanocomposite with metal additives can also have a microhardness of at least about 12 GPa, such as from about 12 to about 18 GPa. The metal additives can be introduced into the diamond-like networks by co-depositing the metals with the diamond-like material, or by another suitable fabrication method. Examples of metal additive incorporation methods are described in U.S. Pat. Nos. 5,352,493 and 6,228,471, which are incorporated by reference in their entireties above.
- In one version of a method of forming a
coating 24 comprising a diamond like material, acomponent structure 25 is placed in aplasma zone 213 of a process chamber, and embodiment of which is shown inFIG. 7 a. Thechamber 106 compriseschamber walls 218 enclosing theplasma zone 213. Thecomponent 20 can be held on asupport 202 in thechamber 106. Aprocess gas supply 130 provides a deposition gas into thechamber 106, and can comprise a gas source, one or more conduits leading from the source to the chamber, flow meters, and one or more gas inlets in thechamber 106. The process gas comprises at least a carbon-containing compound, such as a carbon-containing gas, that is capable of forming bonded carbon networks in thecoating 24. The process gas can also comprise a hydrogen-containing compound, such as a hydrogen-containing gas. For example, the process gas can comprise a gas comprising both carbon and hydrogen atoms, such as at least one of methane, propane, acetylene, butane and ethelyne. To form a diamond like nanocomposite comprising a network of silicon and oxygen, the process gas can further comprise a silicon-containing compound. For example, the process gas can comprise hexamethyldisiloxane or polyphenylmethylsiloxane, as described for example in U.S. Pat. No. 5,638,251 to Goel et al, filed on Oct. 3, 1995 and assigned to Advanced Refractory Technologies, which is herein incorporated by reference in its entirety. The process gas can further comprise an additive gas, such as for example argon. - A gas energizer 216 energizes the process gas to form an energized gas in the
process zone 213 that deposits a diamond like material on thecomponent surface 26 by plasma enhanced chemical vapor deposition. For example, the gas energizer 216 can decompose a process gas comprising carbon, hydrogen, silicon and oxygen containing compounds to deposit a chemical vapor deposition material comprising a diamond like nanocomposite on thesurface 26. The gas energizer 216 can comprise, for example, one or more of an inductor antenna and electrodes that are capable of coupling RF energy to form the energized gas. An exhaust 220 can be provided to exhaust gases from the chamber, and can comprise an exhaust port leading to an exhaust pump, and a throttle valve to control the pressure in thechamber 106. Acontroller 294 can controls the components of thechamber 106 to deposit thecoating 24 on thecomponent 20. - In one version, the
chamber 106 comprises atarget 214 having a metal material that can be sputtered from thetarget 214 by the energized gas to co-deposit the sputtered metal on thesurface 26 simultaneously with the chemical vapor deposited material, to form a diamond like material having a metal additive. In this version, the diamond-like material is co-deposited with the metal additive by a process combining physical vapor deposition of the metal additive in the plasma enhanced chemical vapor deposition environment. Thetarget 214 can comprise a metal material comprising, for example, at least one of titanium and tungsten. In one version, thetarget 214 acts as a part of the gas energizer 216 and can be electrically biased to induce sputtering of the target material. Amagnetron 217 comprising a magnetic field generator can also be provided as a part of the gas energizer 216. A power applied to themagnetron 217 can energize and maintain a density of the gas to sputter material from thetarget 214. The metal material can also be co-deposited in thecoating 24 by methods other than sputtering, such as for example by thermal evaporation of a metal source, or by a metal ion beam. - In one version, a
component 20 comprising thecoating 24 having the diamond-like material can be refurbished, for example in the chamber embodiment shown inFIG. 7 a, after processing a number ofsubstrates 104. Thecoating 24 can be refurbished to repair or replace portions of thecoating 24 that may have eroded during substrate processing, for example by exposure to an energized gas. A cleaning step may also be performed to remove any residual coating from thesurface 26. For example, the surface may be cleaned with a chemical solution that dissolves the coating, or the coating can be grit blasted from thesurface 26. In another version of a cleaning process, the residual coating can be removed by a reactive ion etching process in which the residual coating is exposed to an energized etching gas to etch away the remainingcoating 24. In the refurbishment process, acoating 24 comprising the diamond-like material is re-deposited on thesurface 26 of thecomponent 20, for example by the method described above, including by co-depositing a chemical vapor deposition material simultaneously with a sputtered metal. - In yet another version, a
coating 24 comprising a diamond-like nanocomposite comprising C:H and Si:O networks can be treated to seal thesurface 22 of thecoating 24. For example, thesurface 22 of thecoating 24 can be exposed to an oxygen-containing reactant, such as water vapor, that reacts with carbon atoms in the diamond-like material to form gaseous products, such as for example CO and CO2. The gaseous products leave thesurface 22, providing a “densified” diamond-like surface material having a higher silicon content and a reduced amount of carbon. For example, thesurface 22 of thecoating 24 may comprise at least about 90 atom % of Si and O. The “densified”surface 22 acts as a sealant against further moisture, and provides improved processing performance of the component having thecoating 24. - In another version, the contamination reducing coating comprises a high-purity ceramic having characteristics that reduces the contamination of
substrates 104 fromsurfaces 22 having the high-purity material. In one version, the contamination-reducing material comprising the high-purity ceramic comprises high-purity silicon carbide. The contamination-reducing silicon carbide material comprises a purity of at least about 99% and even at least about 99.999%, and can comprise less than about 5×1012 atoms/cm2 to less than about 5×109 atoms/cm2 of metal atoms, such as less than about 5×1010 atoms of metal atoms per cm2. The silicon carbide material also desirably comprises a high density, such as a density of from about 98% to about 100% of the theoretical density, such as at least about 99% of the theoretical density. Thesurface 22 comprising the metal contamination reducing silicon carbide material can also be polished to provide a low coefficient of friction of less than about 0.3, such as from about 0.05 to about 0.2, and can provide a substantially smooth surface having a low surface roughness, such as an average surface roughness of less than about 0.2 micrometers. - Suitable contamination-reducing silicon carbide materials can be fabricated by, for example, a high purity silicon carbide sintering method, as described for example by U.S. Pat. No. 6,001,756 to Takahashi et al, filed on May 9, 1997 and assigned to Bridgestone Corporation, which is herein incorporated by reference in its entirety. For example, the contamination-reducing silicon carbide material can comprise a
coating 24 having a layer of high-purity sintered silicon carbide. Also, a coating of high purity silicon carbide can be deposited onto thesurface 26 of acomponent 20, for example by a chemical vapor deposition method which reacts carbon and silicon-containing precursors to form a deposited silicon carbide coating. Acoating 24 can also be formed by, for example, thermochemical conversion of a carbonaceous material, such as graphite, with a reactant containing silicon, an example of which conversion is described in U.S. Pat. No. 5,705,262 to Bou et al., filed on Oct. 26, 1994, and assigned to Le Carbone Lorraine, which is herein incorporated by reference in its entirety. - In another version, a contamination reducing material comprises a high-purity ceramic comprising silicon nitride. The high-purity silicon nitride material may have the desired contamination-reducing characteristics, such as less than about 5×1012 atoms/cm2 of contaminate metals, and even less than about 5×1010 atoms/cm2 of contaminate metals. The silicon nitride material may also have a density of from about 98% of the theoretical density to about 100% of the theoretical density, such as at least about 99% of the theoretical density. The high-purity silicon nitride material may have a coefficient of friction of less than about 0.3, such as from about 0.05 to about 0.2, and a hardness of from about 10 GPa to about 18 GPa, such as at least about 16 GPa. Furthermore, the silicon nitride surface may be polished to provide a surface roughness average of less than about 0.4 micrometers. Also, a
coating 24 comprising the metal contamination-reducing Si3N4 can exhibit good adhesion to metal surfaces such as stainless steel even at temperatures of at least about 550°. Thesurface 22 comprising the silicon nitride may comprise asilicon nitride coating 24, such as for example acoating 24 formed by a chemical vapor deposition process. - Other high-purity ceramic materials that may serve as contamination reducing coatings can comprise, for example, at least one of silicon and silicon oxide. The silicon and silicon oxide materials have a high purity with less than about 5×1012 contaminant metals per cm2. The materials are also desirably polished to provide the desired coefficient of friction of less than about 0.3, and an average surface roughness of less than about 0.4 micrometers.
- In one version, a
coating 24 comprising a contamination reducing coating can coat abase layer 130 that covers asurface 26 of acomponent 20 to form aprotective cap 133, as shown for example inFIG. 5 . Thecap 133 provides protection of theunderlying component structure 25, while providing acontamination reducing surface 22 that reduces contamination ofsubstrates 104. Thecap 133 can also comprise aconformal ledge 136 that covers aperipheral edge 137 of theunderlying structure 25 to protect thestructure 25. In one version, thecap 133 comprises acoating 24 having a high-purity silicon carbide layer that is formed over thegraphite base layer 130, for example by chemical vapor deposition or thermochemical conversion of the surface of thegraphite base layer 130, to provide acoating surface 22 having the contamination-reducing materials. In another version, thecap 133 comprises abase layer 130 comprising a metal infiltrated silicon carbide material that is coated by a high-puritysilicon carbide coating 24. The infiltrated siliconcarbide base layer 130 is formed by infiltrating the pores of a porous sintered silicon carbide material with a metal, such as silicon metal. For example, the silicon metal can be infiltrated to provide a volume percent of from about 20% to about 80% of the base layer material. Acoating 24 comprising silicon carbide is formed over the base 130 comprising the infiltrated silicon carbide material by, for example, chemical vapor deposition, to form a high purity silicon carbide layer that reduces contamination. Alternatively, thecap 133 may be substantially entirely made from silicon carbide, such as sintered silicon carbide, to form thecoating 24, or may have a sintered siliconcarbide base layer 130 covered by asilicon carbide coating 24. - In one version, the
cap 133 comprises abase layer 130 that is substantially entirely covered by thecoating 24, as shown for example inFIG. 5 . In this version, thecoating 24 can cover atop surface 131,bottom surface 134 and even aside surface 135 of thebase layer 130. Providing such acoating 24 can be beneficial because thermal stresses that can develop between thecoating 24 andbase layer 130 can be reduced. For example, during a cooling step performed after applying thecoating 24 by a chemical vapor deposition method, differences in the thermal expansion coefficient of thecoating 24 andbase layer 130 can cause stresses that could induce bowing or other deformation of thecoating surface 22. By applying thecoating 24 to thebottom surface 134 of thebase layer 130 as well as thetop surface 131, the stresses at thetop surface 131 can be at least in part compensated for, to even out the stresses at the top andbottom surfaces coating surface 22. - In one version, an
adhesion layer 140 is provided to secure thecoating 24 comprising the contamination-reducing material to the underlying component structure. For example, as shown inFIGS. 1 and 2 , theadhesion layer 140 may be applied to theupper surface 26 of thecomponent 22, and thecoating 24 may be formed thereover to adhere thecoating 24 to thesurface 26. For example theadhesion layer 140 can comprise at least one of titanium, aluminum, zirconium and chromium. In one version, theadhesion layer 140 comprises a metal such as titanium that bonds well to both metal and non-metallic materials. Theadhesion layer 140 can comprise a thickness of, for example, from about 0.25 to about 4 microns. Thecoating 24 and thecap 133 can also be mechanically affixed to theunderlying component structure 25, for example with connector pins. - In one version, a
component 20 having the contamination reducing material comprises asupport structure 25 comprising asubstrate support 100 having anelectrostatic chuck 102, and embodiment of which is shown inFIG. 1 . Theelectrostatic chuck 102 comprises anelectrode 108 at least partially covered by adielectric body 109, and may even be substantially entirely covered by thedielectric body 109. Theelectrode 108 is chargeable by a voltage supply to electrostatically hold asubstrate 104 on thechuck 102. In one version, thedielectric body 109 comprises a dielectric material having a relatively low resistivity of below about 1012 Ohms·cm, such as for example at least one of aluminum nitride, and boron nitride. The relatively low-resistivity dielectric body can promote a Johnson-Rahbek effect to hold the substrate on thechuck 102, by allowing electric charge to at least partially migrate through thedielectric body 109 to hold thesubstrate 104. Other low-resistivity dielectric materials suitable for the dielectric body can include, for example, aluminum oxide doped with at least one of titanium oxide and chromium oxide. - The
electrostatic chuck 102 comprises a plurality ofmesas 112 on anupper surface 26 of thedielectric body 109 that support thesubstrate 104. The plurality ofmesas 112 can be shaped and distributed to provide an optimum electrostatic chucking force, and can also provide a desired heat transfer gas flow distribution to upper surface of the dielectric body. For example, themesas 112 can be arranged in spaced-apart, concentric rings on theupper surface 26. The composition of themesas 112, as well as the height and width of themesas 112, can also be selected to provide the desired electrostatic chucking force. For example, themesas 112 can comprise a dielectric material having a relatively high resistivity, to form a hybrid Johnson-Rahbek electrostatic chuck. An example of a hybrid Johnson-Rahbek electrostatic chuck having supportingmesas 112 is described in U.S. Pat. No. 5,903,428 to Grimard et al, filed on Sep. 25, 1997 and commonly assigned to Applied Materials, which is herein incorporated by reference in its entirety. Themesas 112 can also comprise a conductive material such as a metal-containing material with low resistivity, such as a TiAIN material as described for example in Taiwan Patent No. 0466667 to Tsai, filed on Jun. 29, 2000 and commonly assigned to Applied Materials, which is herein incorporated by reference in its entirety. - In one version, the
mesas 112 comprise acoating 24 having at least one of the contamination-reducing materials described above. For example, substantially theentire mesa 112 can comprise thecoating 24 formed from a contamination-reducing material. A suitable height ofmesas 112 that substantially entirely comprise the contamination-reducing material may be from about 0.25 micrometers to about 6 micrometers. Alternatively, themesa 112 can comprise asurface coating 24 of the contamination-reducing material that overlies the rest of themesa 112. Themesas 112 can comprise a contamination-reducing material comprising at least one of a diamond like material, such as for example diamond-like carbon, a diamond-like nanocomposite, and a metal-containing diamond-like material. Themesas 112 can also comprise a contamination-reducing material comprising a high-purity ceramic, such as at least one of the silicon carbide, silicon nitride, silicon and silicon oxide materials described above. Themesas 112 can also comprise anadhesion layer 140, for example comprising titanium, that improves adhesion of thecoating 24. - In one version, the
mesas 112 comprise a diamond-like material, such as diamond-like carbon or a diamond-like nanocomposite material, that is tailored to provide a desired resistivity, such as a resistivity of from about 102 Ohms·cm to about 1010 Ohms·cm. For example, themesas 112 may comprise a diamond-like material having the proportion of sp2 hybridized carbon atoms selected to provide an electrical resistivity of themesa 112 of from about 104 Ohms·cm to about 108 Ohms·cm, such as a percent of sp2 hybridized carbon atoms of from about 5% to about 10%. As another example, the concentration of metal additive in the diamond-like material can be varied to provide the desired resistivity of the material. For example, a suitable diamond-like material may comprise from about 1 to about 10 atom % of a metal additive such as titanium, to provide a resistivity of from about 104 to about 108 Ohm·cm, such as about 106 Ohm·cm. - In another version, the
mesas 112 comprise a high-purity ceramic, such as at least one of silicon carbide, silicon nitride, silicon and silicon oxide, and thesurface 22 of themesas 112 can be polished to provide a low average surface roughness, to reduce contamination of thesubstrate 104 from the surface. The average surface roughness of themesa surface 22 can be relatively low, as the electrostatic chucking force holds thesubstrate 104 on thesupport 100. For example, thesurface 22 of themesas 112 comprising the high-purity ceramic, such as for example silicon nitride, may comprise an average surface roughness of less than about less than about 0.4 micrometers, and even less than about 0.1 micrometers. - In another version, a
component 20 comprising the contamination-reducing material comprises asupport structure 25 comprising aheat exchange pedestal 150, such as for example aheating pedestal 151, an embodiment of which is shown inFIG. 2 a, or acooling pedestal 152, an embodiment of which is shown inFIG. 2 b. The heat exchange pedestal is adapted to exchange heat with thesubstrate 104 to provide a desired temperature of thesubstrate 104. For example, aheating pedestal 151 may heat asubstrate 104 to remove or de-gas contaminant materials from thesubstrate 104 before processing of the substrate. The coolingpedestal 152 may cool thesubstrate 104 to a desired temperature, such as a temperature that is suitable for handling the substrate after processing. Theheat exchange pedestal 150 comprises a thermallyconductive pedestal body 154 adapted to exchange heat with thesubstrate 104, and a receivingsurface 22 to receive a substrate. Theheat exchange pedestal 150 further comprises aheat exchanger 157 comprising at least on of aheater 155 andconduits 158 through which a heat exchange fluid can be flowed. In one version, thepedestal body 154 comprises a metal material, such as at least one of stainless steel, aluminum and titanium. For example, a suitableheat exchange pedestal 151 may comprise apedestal body 154 comprising stainless steel, and asuitable cooling pedestal 152 can comprise apedestal body 154 comprising aluminum. - A
heating pedestal 151 further comprises aheater 155, such as a resistive heater, or conduits (not shown) through which a heated fluid can be flowed. The heating pedestal can also be heated by overhead heating lamps (not shown.) The heating pedestal may be capable of heating thesubstrate 104 to a temperature of at least about 200° C. to at least about 400° C. The coolingpedestal 152 can typically comprise coolingconduits 158 through which a cooled fluid can be flowed to cool thesubstrate 104. The cooling pedestal may be capable of cooling thesubstrate 104 to a temperature of less than about 80° C. One or more of the heating andcooling pedestals FIG. 6 , to provide the desired heat treatment or cooling of the substrate before or after processing of thesubstrate 104 in aprocess chamber 106. - In one version, the
heat exchange pedestal 150 comprises thecoating 24 comprising at least one of the contamination reducing coatings. For example, theheat exchange pedestal 150 can comprise acoating 24 comprising at least one of a diamond-like material and a high-purity ceramic material. Thecoating 24 can be formed over anupper surface 26 of thepedestal body 154 to protect thesubstrate 104, and can even cover substantially the entireupper surface 26 of thepedestal body 154. Also, thecoating 24 can be provided as a part of aprotective cap 133 that covers thesurface 26, as shown inFIG. 5 . A thickness of thecoating 24 is selected to inhibit migration of the heating body materials to thesubstrate 104, while also providing good heating of thesubstrate 104. For example, a suitable thickness of thecoating 24 may be from about 0.25 micrometers to about 6 micrometers. Theadhesion layer 140 may be provided on thesurface 26 of theheat exchange pedestal 150 to secure thecoating 24 to thepedestal 150. A suitable thickness of theadhesion layer 140, such as a layer comprising titanium, may be from about 0.25 micrometers to about 1 micrometer. In one version, theheat exchange pedestal 150 comprises acoating 24 of a diamond-like material. In another version, the heat exchange pedestal comprises acoating 24 of high-purity silicon carbide. In another version, the heat exchange pedestal comprises acoating 24 of high-purity silicon nitride. In yet another version, theheat exchange pedestal 150 comprises acap 133 having abase layer 130 comprising graphite or silicon infiltrated silicon carbide, and acoating 24 of silicon carbide that substantially entirely covers thebase layer 130. - Furthermore, as the
heat exchange pedestal 150 typically exchanges heat with thesubstrate 104 substantially without electrostatically holding thesubstrate 104, thesupport surface 22 may be tailored to improve retention of thesubstrate 104 on thesurface 22. For example, thesurface 22 of thecoating 24 on theheat exchange pedestal 150 may comprise a slightly higher average surface roughness than the surface ofmesas 112 on an electrostatic chuck. However, the surface roughness is desirably maintained low enough to inhibit contamination of thesubstrate 104. A suitable average surface roughness may be less than about 0.4 micrometers, such as from about 0.1 micrometers to about 0.4 micrometers. - In one version, the retention of the
substrate 104 is improved by forminggrooves 159 in thesurface 22. Thegrooves 159 may comprise, for example radially spaced circular grooves. In one version, thesurface 22 comprises 4 grooves spaced at least about 1 cm apart, and having a depth of from about 50 micrometers to about 500 micrometers, and a width of from about 1 millimeter to about 3 millimeters. In one version, thegrooves 159 are formed by machining or otherwise forming grooves insurface 26 of thepedestal body 154. Aconformal coating 24 of the contamination reducing coating is applied to thesurface 26 of thepedestal body 154, resulting in acoating 24 having a grooved upper surface. Anadhesion layer 140 may also be applied before theconformal coating 24 is formed. Providinggrooves 159 may be especially advantageous for materials such as the diamond-like materials, which are typically very smooth, and which in some instances may otherwise not provide adequate retention of thesubstrates 104 on thepedestal 150. In one version, thegrooves 159 may even be adapted to flow a heat exchange fluid therethrough to exchange heat with asubstrate 104 on thepedestal 150. - In one version, the
surface 22 of thepedestal body 154 comprises a pattern ofgrooves 159 that is capable of equalizing the pressure on the front and backside of asubstrate 104 placed on thesurface 22. For example, theheat exchange pedestal 150 may comprise a de-gassing pedestal that is used tode-gas substrates 104 before or after processing. The pattern ofgrooves 159 may inhibit the build-up of a pressure differential between the substrate front and backsides, thus reducing the incidence of “sticking” of the substrate to thesurface 22. An example of a pattern ofgrooves 159 that is suitable for equalizing the pressure is shown inFIG. 8 . In this version, the pattern ofgrooves 159 comprises a plurality of circle grooves 173 having different radii, and which are desirably concentric. The circle grooves 173 serve to distribute gas pressure evenly about thecenter 174 of thesurface 22. The circle grooves 173 can comprise, for example, a first circle groove 17 a having a first radius, and asecond circle groove 173 b having a second radius, the second radius being larger than the first radius. The pattern ofgrooves 159 further comprises a plurality ofradius grooves 175 that extend across thesubstrate receiving surface 22, and lie substantially only between the circle grooves 173. The radial grooves serve to distribute the gas pressure across the diameter of thesurface 22. In one version, the radius grooves extend substantially only from thefirst circle groove 173 a to thesecond circle groove 173 b. The surface may further comprise a recessed central region 176 that is within thefirst circle groove 173 a. The central region 176 inhibits contact of thesurface 22 with thesubstrate 104, to inhibit the adhesion or sticking ofsubstrates 104, such as slightly bowedsubstrates 104 to the center of thesurface 22. - In one exemplary version, the pattern of
grooves 159 comprises from about 3 to about 8 circle grooves 173, such as 4 circle grooves 173, and comprises from about 2 to about 24radius grooves 175, such as 12radius grooves 175. Thegrooves 159 may comprise a depth of from about 0.5 mm (0.02 inches) to about 1 mm (0.04 inches), such as about 0.8 mm (0.03 inches). The grooves may also comprise a rounded cross-sectional profile, such as a half-circle cross-sectional profile, as shown for example inFIG. 2A . The pattern ofgrooves 159 may serve the further purpose of reducing slipping of thesubstrate 104 on thesurface 22 during placement of thesubstrate 104 on thepedestal 150. - In yet another version, a
component 20 comprising the contamination-reducing material comprises asupport structure 25 having abody 154 comprising adisc 177 with a recessedperipheral ledge 178, as shown for example inFIGS. 8, 9 a and 9 b. For example, thecomponent 20 may comprise aheat exchange pedestal 150 such as a de-gassing pedestal having a diamond-like coating 24 and recessedperipheral ledge 178. The recessedperipheral ledge 178 comprises a radial width that is sized sufficiently large such that theperimeter edge 179 of thesubstrate 104 overhangs at least a portion of theperipheral ledge 178, and contact between theledge 178 andsubstrate 104 is substantially avoided, as shown for example inFIG. 9 b. The recessedperipheral ledge 178 can form a continuous ring about the periphery of thedisc 177, as shown inFIG. 9 a. The recessedperipheral ledge 178 is believed to reduce the contamination ofsubstrates 104 because contact is reduced between thesurface 22 of thepedestal 150 and theperimeter edge 179 of thesubstrate 104, which can comprise a contaminated region in somesubstrates 104. Contact between a contaminated substrateperipheral edge 179 and thesurface 22 of thepedestal 150 can result in the transfer of contaminant particulates to thepedestal 150, and the contamination ofsubsequent substrates 103 placed on thepedestal 150. However, by providing a recessedperipheral ledge 178, the contact between such contaminated areas and thesupport surface 22 is reduced, and the contamination ofsubsequent substrates 104 placed on thesurface 22 is also reduced. The recessedperipheral ledge 178 may desirably comprise a radial width of at least about 1/150th of the diameter of theoverall disc 177. For example, the recessedperipheral ledge 178 may comprise a radial width of at least about 2 mm for adisc 177 having a diameter of 300 mm. A suitable depth at which theperipheral ledge 178 may be recessed away from a 25top surface 182 of thedisc 177 may be a depth of at least about 2 mm. The recessedperipheral ledge 178 can be provided in combination with a pattern ofgrooves 159 on thesurface 22, as shown inFIG. 8 , to provide reduced contamination and pressure equalizing in the processing ofsubstrates 104. - In yet another version, a
component 20 comprising the contamination-reducing material comprises asupport structure 25 comprising alift pin 160, an embodiment of which is shown inFIG. 3 . Thelift pin 160 comprises a moveableelongated member 161 having atip 162 adapted to lift and lower a substrate from a surface of asupport 100. Thelift pin 160 can be a part of alift pin assembly 163, including alift pin support 164 that holds one or more lift pins 160, and that can be attached to a bellows (not shown) to raise and lower the lift pins 160. Thelift pin 160 can comprise at least one of the contamination-reducing materials described above, such as at least one of the diamond-like materials and the high-purity ceramics. For example, thelift pin 160 may comprise acoating 24 of the contamination reducing-material that covers at least a portion of thetip 162 of thelift pin 160, to provide acontact surface 22 that reduces contamination of thesubstrate 104. In one version, a preferred contamination reducing coating for thelift pin 160 comprises acoating 24 comprising a diamond-like material, thecoating 24 having a thickness or from about 1 micrometer to about 4 micrometers on thetip 162 of thelift pin 160. In another version, a preferred contamination reducing coating for thelift pin 160 comprises acoating 24 comprising a high-purity ceramic comprising silicon nitride. In yet another version, the preferred contamination reducing coating comprises silicon carbide. - In yet another version, a
component 20 that is capable of reducing the contamination ofsubstrates 104 comprises asubstrate lifting assembly 185 that is adapted to lift asubstrate 104 from asubstrate support 100 and transport thesubstrate 104, as shown for example inFIG. 10 a. For example, thesubstrate lifting assembly 185 may be adapted to lift and lower asubstrate 104 onto and off of asupport 100 such as aheat exchange pedestal 150. The liftingassembly 185 comprises ahoop 186 that is sized to fit about aperiphery 187 of thesupport 100. A pair ofarcuate fins 188 are mounted on thehoop 186, for example in the opposing arrangement shown inFIG. 10 a. Eacharcuate fin 188 comprises a pair of opposing ends 189 that are angled inwardly towards thesupport 100. Each opposingend 189 comprises aledge 190 that also extends inwardly towards thesupport 100. - The
ledges 190 on eachopposing end 189 of thearcuate fins 188 cooperate to form a lifting structure that is capable of lifting asubstrate 104 off of and onto thesupport 100 by setting thesubstrate 104 on theledges 190. Theledges 190 may be connected to the opposing ends 189 by a beveled connectingregion 191 that slopes downwardly from eachend 189 to the ledge. Theledges 190 are desirably sized to suitably support thesubstrate 104, and may also extend inwardly a sufficient distance to support thesubstrate 104 without excessive contact or rubbing between the beveled connectingregion 191 and thesubstrate 104, thereby reducing the contamination of thesubstrate 104. Theledges 190 may even be sufficiently large such that thesubstrate 104 substantially does not contact the beveled connectingregion 191 at the opposing ends. For example, to lift and transport asubstrate 104 having a diameter of about 300 mm, theledges 190 may extend inwardly from the opposing ends 189 by at least about 7 mm. - The
substrate lifting assembly 185 is further improved by providing at least one raisedprotrusion 192 on theupper surface 193 of eachledge 190 that is sized and shaped to minimize contact between thesubstrate 104 and theledge 190 during lifting and lowering of thesubstrate 104, as shown for example inFIG. 10 b. Minimizing contact between thesubstrate 104 andledge surface 193 further reduces the contamination of thesubstrate 104 by theledge 190, allowing for improved results in the processing of thesubstrate 104. Also,substrates 104 that have already been contaminated can be safely handled by the liftingassembly 185 having the raisedprotrusions 192 substantially without transferring excessive amounts of contamination to theledges 190 or to subsequent substrates lifted by theledges 190. Theprotrusions 192 may also be located towards and even at inward ends 195 of theledges 190, such that the raisedprotrusions 193 contact thesubstrate 104 at regions away from theperimeter edge 179 of thesubstrate 104, and which are typically less contaminated than theperimeter edge 179 of thesubstrate 104. For example, the raisedprotrusions 193 may be spaced away from the opposing ends 189 such that they contact the substrate at a diameter that is at least about 4 mm inside theperimeter edge 179 of thesubstrate 104, and even at least about 7 mm inside theperimeter edge 179. Thus, theprotrusions 193 may be spaced away from the opposing ends 189 by at least about 4 mm and even at least about 7 mm. A suitable height of the raisedprotrusions 193 to minimize contact of thesubstrate 104 with theledges 190 may be a height of at least about 1 mm, such as from about 1 mm to about 2 mm, and even at least about 1.5 mm. - In one exemplary version, the
substrate lifting assembly 185 comprises a single raisedprotrusion 193 on eachledge 190 of thearcuate fins 188, yielding 4total protrusions 193 on which asubstrate 104 to be lifted and transported may rest. Eachprotrusion 193 is spaced inwardly from anopposing end 189 of thearcuate fin 188 such that theprotrusion 193 contacts thesubstrate 104 at a region that is about 7.5 mm inward of theperimeter edge 179 of thesubstrate 104. The protrusions have a height above thesurface 193 of theledge 190 of about 1.6 mm ( 1/16 inch.) In one version, thearcuate fins 188 comprise a metal material, such as for example at least one of stainless steel and aluminum. Thearcuate fins 188 may also comprise a contamination reducing material, such as acoating 24 of a diamond-like material such as a diamond-like nanocomposite, to further reduce contamination of thesubstrates 104. For example, theprotrusions 193 may comprise a contamination-reducing material such as a diamond-like nanocomposite. A contamination reducing-ceramic, such as for example at least one of high purity alumina and quartz, or other non-metallic material may also be provided to form theprotrusions 193, and thearcuate fins 188 may also be entirely made of the contamination-reducing ceramic material. As shown inFIG. 10 , a second pair ofarcuate fins 188 may also be mounted above or below the first pair of arcuate fins to allow the simultaneous transport of more than onesubstrate 104. - In yet another version, the substrate lifting assembly may be a part of a
substrate transport system 198 further comprising asubstrate transfer arm 103 that is capable of transferring a substrate to and from the pair ofarcuate fins 188, as shown for example inFIG. 7B . Thesubstrate transfer arm 103 may be a part of atransfer chamber robot 119 that is capable of delivering substrates to different chambers in a multi-chamber apparatus, as shown for example inFIG. 6 . The substrate transport system may further comprise acontroller 194 having program code to control thesubstrate transfer arm 103 and liftingassembly 185 to reduce the contamination ofsubstrates 104 being transported by thearm 103 and liftingassembly 185. In one version, thecontroller 194 comprises substrate centering control program code to send control signals to thetransfer arm 103 to move thetransfer arm 103 such that thesubstrate 104 is substantially aligned along acentral axis 197 of the chamber, and above the center of thesupport 100. By correctly positioning thesubstrate 104 substantially aligned with the central axis of thechamber 106, the correct positioning of thesubstrate 104 on thearcuate fins 188 may be more readily achieved, substantially without excessive slipping of thesubstrate 104 when placed on thearcuate fins 188, which slipping can otherwise abrade and contaminate thesubstrate 104. Thecontroller 194 may further comprise program code to raise thehoop 186 to lift thearcuate fins 188 towards thesubstrate transfer arm 103, and to operate thehoop 186 andtransfer arm 103 in conjunction to transfer the substrate between thetransfer arm 103 andarcuate fins 188. Thehoop 186 may then be lowered by thecontroller 194 to set thesubstrate 104 on thesupport 100 for processing. - In one version, the
substrate transport system 198 comprises adetector 199 that is capable of detecting a position of one or more of thesubstrate 104 andtransfer arm 103, and generating a signal in relation to the detected position that can be used to properly position thesubstrate 104 in thechamber 106. In one version, thedetector 199 comprises a pair oflight sensors 200 a,b that are arranged onopposite ends 203 a,b of aslit valve 201 comprising an opening through which thesubstrate 104 andtransfer arm 103 enter thechamber 106, as shown for example inFIG. 11 . Thelight sensors 200a,b may be capable of determining whether thesubstrate 104 being transported through theslit valve 201 by thetransfer arm 103 is substantially centered as it passes through the slit valve 210, or whether the substrate and transfer arm are off-center and have been shifted towards one or theother end 203 a,b of the slit valve. In one version, thelight sensors 200 a,b are capable of detecting an intensity of light reaching each sensor, and the intensity of light detected by eachsensor 200 a,b can be compared to determine the relative position of thesubstrate 104 andtransfer arm 103. For example, the amount of light that is being blocked from reaching eachlight sensor 200 a,b provides an indication of the location ofsubstrate 104 andtransfer arm 103 relative to the sensors 200. The signal generated by thelight sensors 200 a,b in relation to the detected light can thus be used by thecontroller 194 to calculate the location of thesubstrate 104 as it is being transferred into theprocess chamber 106, and to generate control signals to control the position of thetransfer arm 103 andsubstrate 104 in thechamber 106. Other means of detecting the substrate position can also be used in addition to or as an alternative to thelight sensors 200 a,b, and thelight sensors 200 a,b can also comprise different arrangements about theslit valve 201. - In one version, the
controller 194 acts as a part of thetransport system 198 by using the signal generated by thedetector 199 to calculate an offset distance that is a difference between the detected position of thesubstrate 104 and a center of theprocess chamber 106 that is aligned with the chambercentral axis 197. Thecontroller 104 can then generate a control signal in relation to the offset distance to control the movement of thetransfer arm 103 to position thesubstrate 104 substantially over the center of thesupport 100 and along thecentral axis 197 of thechamber 106, thus reducing the incidence of abrasion of thesubstrate 104 resulting from off-centered delivery of thesubstrate 104 to the liftingassembly 185. For example, thecontroller 194 may provide control instructions to thetransfer arm 103 to move to the left or right, for example towards one orother end 203 a,b of theslit valve 201, to center thesubstrate 104 in a plane parallel to thecentral axis 197 of the chamber. Thecontroller 194 may also comprise program code to generate control instructions to move thetransfer arm 103 andsubstrate 104 forward into the chamber a distance that is sufficient to align the center of the substrate with thecentral axis 197 of thechamber 106, and position thesubstrate 104 over substantially the center of thesupport 100. Thus, thetransport system 198 can be used to transport the substrate into the process chamber and align thesubstrate 104 in the chamber such that contamination due to misalignment and abrasion of the substrate is reduced. - To remove the
substrate 104 from thechamber 106, thecontroller 194 may comprise program code to operate thetransfer arm 103 and liftingassembly 185 through the above transfer steps in reverse. For example, thecontroller 194 may comprise program code to operate thehoop 186 to lift thesubstrate 104 off thesupport 100 and onto thearcuate fins 188, and raise thesubstrate 104 in thechamber 106 along thecentral axis 197. Thetransfer arm 103 may be operated to locate and move to thecentral axis 197 of thechamber 106, and operate in conjunction with the liftingassembly 185 to transfer thesubstrate 104 from thearcuate fins 188 to the transfer arm. Thecontroller 194 may also use signals from thedetector 199 to align thetransfer arm 103 in theprocess chamber 106 to receive thesubstrate 104 from the liftingassembly 185 substantially without abrading and contamination thesubstrate 104. Thecontroller 194 may then instruct thetransfer arm 103 to remove thesubstrate 104 from thechamber 106, and for example, to provide afresh substrate 104 in thechamber 106. Thus, thetransfer arm 103 andcontroller 194 can facilitate a reduction in the contamination levels of processed substrates by providing for the desired alignment of thesubstrate 104 in the chamber, such that excessive abrasion and rubbing does not occur between thesubstrate 104 and chamber components such as the liftingassembly 185 andsupport 100. - In one version, the
transfer arm 103 that is capable of transferring thesubstrate 104 into and out of theprocess chamber 106, for example from a vacuum or de-gassing chamber, may itself comprise acontact surface 22 that contacts thesubstrate 104 during the transfer process, and that comprises a contamination-reducing material that is capable of reducing contamination of thesubstrate 104. For example, thetransfer arm 103 may comprise atransfer blade 205 having acoating 24 of a contamination-reducing material having thecontact surface 22 thereon, as shown for example inFIG. 11 . The contamination-reducing material may be, for example, a diamond-like material such as a diamond-like nanocomposite. In another example, thetransfer arm 103 may reduce contamination of thesubstrate 104 by minimizing contact with thesubstrate 104 as it is transferred into and out of theprocess chamber 106. For example, thetransfer arm 103 may comprise one or more raised protrusions 206 that raise thesubstrate 104 and minimize contact of thesubstrate 104 with the rest of thetransfer blade 205, such as raised protrusions having a height of at least about 1.6 mm. In one version, the protrusions 206 may even be arranged on thecontact surface 22 of thetransfer blade 205 such that they substantially do not contact thebackside perimeter edge 179 of thesubstrate 104, thereby reducing the contact between thetransfer arm 103 and a region of thesubstrate 104 that typically comprises a relatively high amount of contaminants. For example, the raised protrusions may be arranged such that they contact the backside of thesubstrate 104 at a diameter that is at least about 4 mm inside theperimeter edge 179 of thesubstrate 104. Thus, thetransfer arm 103 may be adapted to reduce the contamination of thesubstrate 104 during transfer of the substrate into and out of aprocess chamber 106. - In another version, a
component 20 comprising the contamination-reducing material comprises asupport shutter 180, an embodiment of which is shown inFIG. 4 . Thesupport shutter 180 is adapted to protect asurface 28 of asubstrate support 100 when thesubstrate 104 is not present on thesupport 100, for example during a chamber cleaning process. Theshutter 180 inhibits the deposition of material onto thesurface 28, such as material that can be knocked loose from a sputtering target during cleaning of the target and chamber. Theshutter 180 typically comprises astructure 25 comprising adisc 181 that is sized and shaped to cover at least a portion of thesurface 28 of thesupport 100, and may even substantially entirely cover an exposedsurface 28 of thesupport 100. Thesurface 28 can comprise, for example, thetop surfaces 22 of mesas 112 (not shown), and can also comprise the top of a substantially planar support surface 28 (as shown.) A mechanical arm (not shown) can rotate theshutter disc 181 onto thesurface 28 of the support to cover thesurface 28, and can rotate theshutter disc 181 away from thesupport surface 28 to process asubstrate 104 on thesupport 100. - To reduce contamination of the
support surface 28, and thus thesubstrate 104, theshutter disc 181 desirably comprises at least one of the contamination-reducing materials described above, such as for example at least one of the diamond-like materials and high-purity ceramic materials. In one version, theshutter disc 181 comprises abottom surface 183 comprising acoating 24 having the contamination-reducing material. Thecoating 24 provides alower surface 184 that reduces contamination of the substrate and support from metal particulates resulting from contact of thesurface 184 with thesurface 28 of thesupport 100. Theshutter disc 181 can also be mechanically attached to acoating layer 24 of contamination reducing coating, for example with a connecting pin. In another version, thedisc 181 comprises atop surface 189 having the metal-contamination reducing material, such as the coating 24 (not shown), and thedisc 181 may also comprise acoating 24 that covers substantially the entire disc. Theshutter disc 181 can comprise a contamination reducing material comprising, for example, at least one of high purity silicon carbide, silicon nitride, silicon and silicon oxide. In a preferred version, thelower surface 184 of theshutter disc 181 comprises acontamination reducing coating 24 comprising a high-purity silicon nitride material. -
Other components 20 that could comprise the contamination-reducing materials described can include the blades of robot transfer arms, rings on a substrate support, and other components involved in the support or transfer ofsubstrates 104 for processing. - The
components 20 having the contamination reducing coatings may be a part of amulti-chamber apparatus 102 comprising a plurality ofprocessing chambers 106 a-d. An embodiment of anapparatus 102 suitable for processing substrates 10 comprises one ormore processing chambers 106 a-d, as shown inFIG. 6 . Thechambers 106 a-d are mounted on a platform, such as an Endura 2 platform from Applied Materials, Inc., of Santa Clara, Calif., that provides electrical, plumbing, and other support functions. Theplatform 109 typically supports aload lock 113 to receive acassette 115 ofsubstrates 104 to be processed and asubstrate transfer chamber 117 containing arobot 119 to transfer substrates from thecassette 115 to thedifferent chambers 106 a-d for processing and return them after processing. Thedifferent chambers 106 a-d may include, for example, a cleaning chamber, an etching chamber, a deposition chamber for depositing materials on substrates, optionally, a heat treatment chamber, and other processing chambers. For example, in one version, one of thechambers 106 a-d comprises a heat treatment chamber comprising aheating pedestal 151 to heat thesubstrate 104 before processing to degas thesubstrate 104. After degassing of thesubstrate 104, thesubstrate 104 can be transferred by therobot 119 to aprocess chamber 106 to etch material on thesubstrate 104. Thesubstrate 104 can also be transferred by therobot 119 to a process chamber comprising a deposition chamber, for example to deposit a barrier layer onto asubstrate 104 held on an electrostatic chuck. After processing, thesubstrate 104 can be transferred by therobot 119 to a cool-down chamber where the substrate can be placed on acooling pedestal 152 to cool thesubstrate 104. Thechambers 106 a-d are interconnected to form a continuous vacuum environment within theapparatus 102 in which the process may proceed uninterrupted, thereby reducing contamination ofsubstrates 104 that may otherwise occur when transferring wafers between separate chambers for different process stages. The components in theapparatus 102, such as components that contact or support thesubstrate 104, also desirably comprise contamination reducing materials to reduce the contamination of thesubstrate 104. - In one version, the
apparatus 102 comprises atransfer chamber 117 comprising arobot 119 having thetransfer arm 103; a degas orheating chamber 106 a having aheating pedestal 151; apre-clean chamber 106 b adapted to clean asubstrate 104 before a deposition process by exposing thesubstrate 104 to an energized pre-clean gas, the pre-clean chamber comprising asubstrate support 100; adeposition chamber 106 c, such as a physical vapor deposition or chemical vapor deposition chamber adapted to deposit a material on thesubstrate 104, thedeposition chamber 106 c having asubstrate support 100; and a cool-down chamber 106 d to cool thesubstrate 104 after processing, the cool-down chamber comprising acooling pedestal 152. One or more of thechambers 106 a-d may further comprise thesubstrate lifting assembly 185 with thearcuate fins 188 to raise and lower thesubstrate 104 on and off of thepedestals multi-chamber apparatus 102, including thetransfer arm 103, liftingassembly 185, supports 100 and pedestals 151, 152 desirably comprise contamination-reducing materials and/or contamination-reducing structures such that a substrate cycled through each of the chambers has a contamination level of less than about 5×1010 atoms/cm3 for iron, and less than about 1×1011 atoms/cm3 for all other metal ions. - An embodiment of a
process chamber 106 which may comprise thecomponents 20 having the contamination-reducing material is shown inFIG. 7 b. Thechamber 106 comprises anenclosure wall 118, which may comprise a ceiling, sidewalls, and a bottom wall that enclose aprocess zone 113. In operation, process gas is introduced into thechamber 106 through agas supply 130 that includes a process gas source, and a gas distributor. The gas distributor may comprise one or more conduits having one or more gas flow valves and one or more gas outlets around a periphery of thesubstrate 104 which may be held in the process zone 111 on thesubstrate support 100 having asubstrate receiving surface 180. Alternatively, the gas distributor may comprise a showerhead gas distributor (not shown). Spent process gas and process byproducts are exhausted from thechamber 106 through anexhaust 120 which may include an exhaust conduit that receives spent process gas from theprocess zone 113, a throttle valve to control the pressure of process gas in thechamber 106, and one or more exhaust pumps. - The process gas may be energized to process the
substrate 104 by agas energizer 116 that couples energy to the process gas in the process zone 1 13 of thechamber 106. In one version, thegas energizer 116 comprises process electrodes that may be powered by a power supply to energize the process gas. The process electrodes may include an electrode that is or is in a wall, such as a sidewall or ceiling of thechamber 106 that may be capacitively coupled to another electrode, such as anelectrode 108 in thesupport 100 below thesubstrate 104. Alternatively or additionally, thegas energizer 116 may comprise an antenna comprising one or more inductor coils which may have a circular symmetry about the center of the chamber. In yet another version, thegas energizer 116 may comprise a microwave source and waveguide to activate the process gas by microwave energy in a remote zone upstream from thechamber 106. In a physicalvapor deposition chamber 106 adapted to deposit material on asubstrate 104, the chamber further comprises atarget 114 facing thesubstrate 104 that is sputtered by the energized gas to deposit material from thetarget 114 onto thesubstrate 104. - To process a
substrate 104, theprocess chamber 106 is evacuated and maintained at a predetermined sub-atmospheric pressure. Thesubstrate 104 is then provided on thesupport 100 by a substrate transport, such as for example arobot arm 103 and alift pin 160. Thesubstrate 104 can be held on thesupport 100 by applying a voltage to theelectrode 108 in thesupport 100, for example via anelectrode power supply 172. Thegas supply 130 provides a process gas to thechamber 106 and thegas energizer 116 couples RF or microwave energy to the process gas to energizes the gas to process thesubstrate 104. Effluent generated during the chamber process is exhausted from thechamber 106 by theexhaust 120. - The
chamber 106 andmulti-chamber apparatus 101 can be controlled by acontroller 194 that comprises program code having instruction sets to operate components of eachchamber 106 a-d to processsubstrates 104 in thechamber 106, as shown for example inFIG. 7 b. For example, thecontroller 194 can comprise a substrate positioning instruction set to operate one or more of thesubstrate support 100 androbot arm 119 and liftpins 160 to position asubstrate 104 in thechamber 106; a gas flow control instruction set to operate thegas supply 130 and flow control valves to set a flow of gas to thechamber 106; a gas pressure control instruction set to operate theexhaust 120 and throttle valve to maintain a pressure in thechamber 106; a gas energizer control instruction set to operate thegas energizer 116 to set a gas energizing power level; a temperature control instruction set to control temperatures in thechamber 106; and a process monitoring instruction set to monitor the process in thechamber 106. - Embodiments of the invention provide substantial benefits in the processing of substrates, and in particular in the reduction of contamination of
substrates 104 by metal ions such as iron. Providing the contamination-reducing materials, as well as contamination reducing components such as the transport blade, can reduce contamination levels to on the order of less than 5×1010 atoms/cm3 for iron, and 1×1011 atoms/cm3 for all other ions, by substantially eliminating contact of thesubstrate 104 with metal components or components having a metallic surface. - Although exemplary embodiments of the present invention are shown and described, those of ordinary skill in the art may devise other embodiments which incorporate the present invention, and which are also within the scope of the present invention. For example, the
support 100,heat exchange pedestal 150, lift pins 160, orother components 20 may comprise other shapes and configurations other than those specifically described. Also, the contamination-reducing materials may be fabricated by means other than those specifically described and may comprise different configurations on thecomponents 20. Furthermore, relative or positional terms shown with respect to the exemplary embodiments are interchangeable. Therefore, the appended claims should not be limited to the descriptions of the preferred versions, materials, or spatial arrangements described herein to illustrate the invention.
Claims (36)
1. A substrate transfer arm capable of transferring a substrate into and out of a process chamber, the transfer arm comprising:
(a) a blade; and
(b) a diamond-like coating on the blade, the diamond-like coating comprising interlinked networks of (i) carbon and hydrogen, and (ii) silicon and oxygen, and the diamond-like coating having a contact surface comprising:
(i) a coefficient of friction of less than about 0.3;
(ii) a hardness of at least about 8 GPa; and
(iii) a metal concentration level of less than about 5×1012 atoms/cm2 of metal,
whereby the contact surface reduces contamination of a substrate when directly or indirectly contacting a substrate.
2. A substrate transfer arm according to claim 1 wherein the contact arm comprises one or more raised protrusions so that the substrate contacts substantially only the raised protrusions, thereby minimizing contact with the blade.
3. A support structure according to claim 1 wherein the diamond-like coating comprises a thickness of from about 0.02 to about 20 microns.
4. A support structure according to claim 1 wherein the diamond-like coating comprises a wear factor of less than 5×106 mm3/Nm.
5. A support pedestal capable of reducing particulate contamination of a substrate, the support pedestal comprising:
(a) a pedestal structure comprising a disc having a recessed peripheral ledge; and
(b) a diamond-like coating on the disc, the diamond-like coating comprising interlinked networks of (i) carbon and hydrogen, and (ii) silicon and oxygen, and the diamond-like coating having a contact surface comprising:
(i) a coefficient of friction of less than about 0.3;
(ii) a hardness of at least about 8 GPa; and
(iii) a metal concentration level of less than about 5×1012 atoms/cm2 of metal,
whereby the contact surface reduces contamination of a substrate when directly or indirectly contacting a substrate.
6. A support pedestal according to claim 5 wherein the recessed peripheral ledge comprises a radial width that is sized sufficiently large to avoid contact with a contaminated backside perimeter edge.
7. A support pedestal according to claim 5 wherein the recessed peripheral ledge comprises a radial width of at least about 1/150th the diameter of the disc.
8. A support pedestal according to claim 5 wherein the recessed peripheral ledge comprises a radial width that is at least about 2 mm wide.
9. A support pedestal according to claim 5 wherein the recessed peripheral ledge comprises a depth of at least about 2 mm.
10. A lifting assembly to lift a substrate from a substrate support and transport the substrate, the lifting assembly comprising:
(a) a hoop sized to fit about a periphery of the substrate support; and
(b) a pair of arcuate fins mounted on the hoop, each arcuate fin comprising a pair of opposing ends having ledges that extend radially inward, each ledge having a raised protrusion to lift a substrate so that the substrate contacts substantially only the raised protrusion, thereby minimizing contact with the ledge, when the pair of fins is used to lift the substrate off the substrate support.
11. A substrate lifting assembly according to claim 10 wherein the support ledges extend inwardly from the opposing ends by at least about 4 mm.
12. A substrate lifting assembly according to claim 10 wherein the raised protrusions are spaced inwardly by at least about 4 mm from the opposing ends.
13. A substrate lifting assembly according to claim 10 wherein the raised protrusions comprise a height above a surface of the support ledge of at least about 1 mm.
14. A substrate lifting assembly according to claim 10 further comprising a second pair of arcuate ends mounted below the first pair.
15. A substrate lifting assembly according to claim 10 wherein the pair of arcuate fins comprises at least one of stainless steel and aluminum.
16. A substrate lifting assembly according to claim 10 wherein the pair of arcuate fins comprises at least one of alumina and quartz.
17. A substrate lifting assembly according to claim 10 wherein the arcuate fins comprise a diamond-like coating thereon, the diamond-like coating comprising interlinked networks of (i) carbon and hydrogen, and (ii) silicon and oxygen, and the diamond-like coating having a contact surface comprising:
(i) a coefficient of friction of less than about 0.3;
(ii) a hardness of at least about 8 GPa; and
(iii) a metal concentration level of less than about 5×1012 atoms/cm2 of metal.
18. A heat exchanging support comprising:
(a) a body having a substrate receiving surface with a pattern of grooves;
(b) a diamond-like coating covering the substrate receiving surface, the diamond-like coating comprising a network of carbon, hydrogen, silicon and oxygen, the substrate receiving surface comprising a pattern of grooves thereon; and
(c) a heat exchanger.
19. A support according to claim 18 wherein the heat exchanger comprising at least one of (i) a heater, and (ii) conduits for passing a heat exchange fluid therethrough.
20. A support according to claim 18 wherein the heat exchanger comprises a heater.
21. A support according to claim 18 wherein the heat exchanger comprises a conduit for passing a heat exchange fluid therethrough.
22. A support according to claim 18 wherein the pattern of grooves is capable of equalizing the pressure on the front and backside of the substrate placed on the substrate receiving surface.
23. A support according to claim 18 wherein the pattern of grooves comprises a plurality of circle grooves with different radii, and a plurality of radius grooves that extend radially across the receiving surface and substantially only between the circle grooves.
24. A support according to claim 23 wherein the circle grooves comprise a first circle groove having a first radius and a second circle groove having a second radius, the second radius being larger than the first radius, and wherein the radius grooves extend substantially only from the first circle groove to the second circle groove.
25. A support according to claim 24 comprising a recessed central region within the first circle groove.
26. A support according to claim 23 comprising from about 2 to about 8 circle grooves.
27. A support according to claim 23 comprising from about 2 to about 24 radius grooves.
28. A support according to claim 18 wherein the diamond-like coating comprises at least one of the following properties:
(i) a wear factor of less than 5×10−6 mm3/Nm;
(i) a coefficient of friction of less than about 0.3;
(ii) a hardness of at least about 8 GPa;
(iii) a resistivity of from about 104 Ohm·cm to about 108 Ohm·cm.
29. A substrate transport system to transport a substrate onto a substrate support in a process chamber, the transport system comprising:
(a) a transfer arm to transport the substrate into the chamber;
(b) a detector to detect a position of the transfer arm in the chamber and generate a signal in relation to the position;
(c) a substrate lifting assembly adapted to receive the substrate from the transfer arm and lower the substrate onto the support; and
(d) a controller comprising program code to control the transfer arm, detector, and lifting assembly to transport the substrate onto the substrate support, the program code comprising:
(i) substrate centering control code to control the movement of the substrate transfer arm to position the substrate over substantially the center of the support by (1) receiving the signal from the detector and determining the position of the substrate in the process chamber, (2) calculating an offset distance comprising a difference between the detected position of the substrate and the center of the process chamber, and (3) generating a control signal in relation to the offset distance to control the movement of the transfer arm to position the substrate substantially over the center of the support.
30. A transport system according to claim 29 wherein the process chamber comprises a slit valve through which the substrate enters the chamber, and wherein the detector comprises a pair of light sensors on opposite sides of the slit valve, the light sensors being adapted to detect radiation reflected from the substrate to determine the position of the substrate.
31. A transport system according to claim 29 wherein the lifting assembly comprises:
(a) a hoop sized to fit about a periphery of the substrate support; and
(b) a pair of arcuate fins mounted on the hoop, each arcuate fin comprising a pair of opposing ends having ledges that extend radially inward, each ledge having a raised protrusion to lift a substrate so that the substrate contacts substantially only the raised protrusion, thereby minimizing contact with the ledge, when the pair of fins is used to lift the substrate off the substrate support.
32. A transport system according to claim 29 wherein the system is adapted to transport the substrate onto a support comprising a disc having a recessed peripheral ledge.
33. A substrate processing apparatus comprising:
(a) a process chamber comprising:
(i) a gas supply;
(ii) a gas energizer;
(iii) a substrate support to support the substrate in the chamber, the support comprising a body having a disc comprising a recessed peripheral ledge;
(iv) a lifting assembly to lift a substrate from the support, the lifting assembly comprising (1) a hoop sized to fit about a periphery of the substrate support, and (2) a pair of arcuate fins mounted on the hoop, each arcuate fin comprising a pair of opposing ends having ledges that extend radially inward, each ledge having a raised protrusion to lift a substrate so that the substrate contacts substantially only the raised protrusion, thereby minimizing contact with the ledge, when the pair of fins is used to lift the substrate off the substrate support; and
(v) a gas exhaust;
(b) a transfer arm to transport the substrate into the chamber;
(c) a detector to detect a position of the transfer arm in the chamber and generate a signal in relation to the position; and
(d) a controller comprising program code to control the gas supply, gas energizer, support, lifting assembly, transfer arm and detector to transport the substrate into the process chamber and onto the substrate support, wherein the program code comprises substrate centering control code to control the movement of the substrate transfer arm to position the substrate over substantially the center of the support by (1) receiving the signal from the detector and determining the position of the substrate in the process chamber, (2) calculating an offset distance comprising a difference between the detected position of the substrate and the center of the process chamber, and (3) generating a control signal in relation to the offset distance to control the movement of the transfer arm to position the substrate substantially over the center of the support.
34. An apparatus according to claim 33 wherein the support comprises a diamond-like coating on the body, the diamond-like coating comprising interlinked networks of (i) carbon and hydrogen, and (ii) silicon and oxygen, and the diamond-like coating having a contact surface comprising:
(i) a coefficient of friction of less than about 0.3;
(ii) a hardness of at least about 8 GPa; and
(iii) a metal concentration level of less than about 5×1012 atoms/cm2 of metal,
whereby the contact surface reduces contamination of a substrate when directly or indirectly contacting a substrate.
35. An apparatus according to claim 33 wherein the support comprises a body having a substrate receiving surface with a pattern of grooves, the pattern of grooves comprises a plurality of circle grooves with different radii, and a plurality of radius grooves that extend radially across the receiving surface and substantially only between the circle grooves.
36. A multi-chamber substrate processing apparatus comprising:
(a) a transfer chamber comprising a transfer arm to transfer a substrate between chambers;
(b) a heating chamber to heat the substrate, the heating chamber comprising a heating pedestal to support the substrate thereon;
(c) a pre-clean chamber to clean a substrate by exposing the substrate to an energized gas, the pre-clean chamber comprising a pre-clean support to support the substrate thereon;
(d) a deposition chamber to deposit a material on the substrate, the deposition chamber comprising a deposition support to support the substrate thereon;
(e) a cool-down chamber to cool the substrate, the cool-down chamber comprising a cooling pedestal to support the substrate thereon;
(f) one or more lifting assemblies in the chamber to raise and lower the substrate onto at least one of the pedestals and supports; and
(g) a controller adapted to control the transfer arm and lifting assemblies to transport the substrate into each of the chambers and place the substrate on the pedestals and supports,
wherein at least one of the transfer arm, lifting assemblies, heating pedestal, cooling pedestal, pre-clean support and deposition support have a coating comprising a contamination-reducing material, and
wherein a substrate that is transferred by the transfer arm to each chamber, raised by the lifting assemblies, and processed on the pedestals and supports in each chamber, comprises a metal contamination level of less than about 1×1011 atoms/cm2.
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US14/337,131 Active 2026-10-03 US10053778B2 (en) | 2004-02-24 | 2014-07-21 | Cooling pedestal with coating of diamond-like carbon |
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Also Published As
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JP5270095B2 (en) | 2013-08-21 |
US20140326184A1 (en) | 2014-11-06 |
US8852348B2 (en) | 2014-10-07 |
JP2007527625A (en) | 2007-09-27 |
US20050183669A1 (en) | 2005-08-25 |
TWI327744B (en) | 2010-07-21 |
WO2005083752A3 (en) | 2006-01-12 |
CN101383317A (en) | 2009-03-11 |
KR101357097B1 (en) | 2014-02-03 |
US10053778B2 (en) | 2018-08-21 |
CN100543959C (en) | 2009-09-23 |
US20110017424A1 (en) | 2011-01-27 |
CN101393883B (en) | 2011-04-20 |
CN101393883A (en) | 2009-03-25 |
KR20070097296A (en) | 2007-10-04 |
KR20120045029A (en) | 2012-05-08 |
CN101383317B (en) | 2010-12-15 |
TW200540928A (en) | 2005-12-16 |
KR20130069888A (en) | 2013-06-26 |
WO2005083752A2 (en) | 2005-09-09 |
US7824498B2 (en) | 2010-11-02 |
KR101400256B1 (en) | 2014-05-27 |
CN1922724A (en) | 2007-02-28 |
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