US20050244759A1 - Bake apparatus for use in spin-coating equipment - Google Patents
Bake apparatus for use in spin-coating equipment Download PDFInfo
- Publication number
- US20050244759A1 US20050244759A1 US11/095,554 US9555405A US2005244759A1 US 20050244759 A1 US20050244759 A1 US 20050244759A1 US 9555405 A US9555405 A US 9555405A US 2005244759 A1 US2005244759 A1 US 2005244759A1
- Authority
- US
- United States
- Prior art keywords
- chamber
- buffer plate
- discharge holes
- gas
- exhaust opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Definitions
- the present invention relates to the manufacturing of semiconductor devices and the like. More specifically, the present invention relates to bake apparatus for baking a substrate, such as a semiconductor wafer, coated with photoresist.
- Semiconductor devices are generally manufactured by subjecting a substrate, e.g., a wafer, to ion implantation, deposition, diffusion, photolithography and etching processes.
- a substrate e.g., a wafer
- the aim of these processes, especially the photolithography process, is to form a desired pattern on the wafer.
- the photolithography process includes coating, exposing and developing processes.
- the coating process the photoresist is dispensed onto the wafer and the wafer is rotated at a high speed so that the wafer is covered with a layer of photoresist to a desired thickness.
- the exposure process the wafer covered with the photoresist and a corresponding mask or reticle are aligned with each other.
- the layer of photoresist is irradiated with light, such as ultraviolet light, through the mask or reticle so as to transfer a pattern of the mask or reticle to the layer of photoresist.
- the developing process the exposed layer of photoresist is developed to form a desired photoresist pattern. More specifically, either the exposed or non-exposed portion of the layer of photoresist is removed by a developing solution whereby the layer of photoresist is patterned.
- a target layer(s) underlying the photoresist pattern is etched using the photoresist pattern as an etch mask. As a result, the target layer(s) is/are patterned.
- the photolithography process additionally includes an HMDS(Hexamethyl disilane) process and one or more bake processes.
- the HMDS process is performed to improve the adhesion of the photoresist to the wafer.
- a bake process may be performed to remove moisture or an organic solvent from the wafer before the wafer is coated with the photoresist.
- a bake process may be performed after the wafer has been coated with the photoresist to remove solvent from the photoresist.
- a chamber-type of bake apparatus is used to perform the bake process.
- the bake apparatus includes a chamber, and a hot plate disposed within the chamber.
- a wafer coated with the photoresist is set on the hot plate and baked at a predetermined temperature within the chamber.
- the speed at which the temperature of a wafer can be raised to the bake temperature once the wafer is transferred into the chamber of the bake apparatus, and the extent to which the bake temperature can be maintained uniform, are factors that directly affect the production yield of semiconductor devices.
- the bake apparatus should be capable of quickly raising the temperature of the wafer and of precisely controlling the temperature of the wafer during the bake process.
- FIG. 1 illustrates conventional bake apparatus for baking a typical semiconductor wafer.
- the bake apparatus includes a chamber 100 , a hot plate 102 installed within the chamber 100 , and a buffer plate 108 that is disposed at an upper part of the chamber 100 and has two discharge holes 1 10 extending therethrough.
- a wafer 106 is mounted on the hot plate 102 , and the hot plate 102 heats the wafer 106 to a predetermined temperature and thereby bakes a photoresist layer on the wafer 106 .
- the bake apparatus has an air injection passage 104 through which a predetermined quantity of gas (air) is injected into the chamber 100 .
- the gas is pre-heated to predetermined temperature appropriate for the bake process.
- the buffer plate 108 uniformly disperses the gas within the chamber 100 .
- the bake apparatus has an exhaust passageway 112 through which the gas is exhausted to the outside via the discharge holes 110 of the buffer plate 108 .
- the buffer plate 108 is circular.
- the discharge holes 110 have the same diameter and are disposed at the same distance from the center of the circular buffer plate 108 .
- support pins extend from an upper surface of the hot plate 102 . These pins support the wafer 106 horizontally above the upper surface of the hot plate 102 so that the hot plate 102 is not in direct contact with the wafer 106 .
- the gas adjacent the portion of the buffer plate 108 where the discharge holes 110 are present is exhausted quickly, whereas the gas adjacent the other portions of the buffer plate 108 is exhausted slowly. In other words, the gas is not exhausted uniformly from the chamber 100 .
- This causes variations in the thickness of the layer of photoresist which, in turn, results in defects in the pattern formed using the patterned photoresist layer as an etch mask.
- a pattern having an unsatisfactory critical dimension (CD) is formed on the wafer.
- an object of the present invention is to provide bake apparatus for use in a spin-coater, which is capable of uniformly exhausting air from the chamber of the apparatus.
- the bake apparatus includes a chamber, a hot plate installed within the chamber, and at least one buffer plate disposed in an upper part of the chamber and having discharge holes configured so that gas will be discharged uniformly from the chamber.
- the gas is injected into the chamber through an air injection passageway.
- the gas is exhausted to the outside via an exhaust opening.
- the at least one buffer plate is interposed between the hot plate and the location at which the exhaust opening communicates with the interior of the chamber.
- the discharge holes are arranged in a series of concentric circles whose centers coincide at a central portion of the buffer plate.
- the innermost circle extends over a central portion of the hot plate, and an outermost one of the circles extends over an outer peripheral portion of the hot plate.
- the discharge holes preferably span the entire area above the hot plate and hence, a wafer when the wafer is supported on the hot plate.
- the bake apparatus includes a chamber, a hot plate installed within the chamber, and first and second buffer plates disposed within an upper part of the chamber.
- the first buffer plate disposed has a plurality of discharge holes therethrough such that gas is uniformly dispersed by the first buffer plate within the chamber is discharged through the discharge holes.
- the second buffer plate is disposed within the chamber above the first buffer plate and has a plurality of discharge holes therethrough.
- the discharge holes are arranged so that the gas is discharged uniformly from the chamber.
- the discharge holes of the second buffer plate are laterally offset relative to the discharge holes of the first buffer plate so as to not directly overlie the discharge holes of the first buffer plate.
- FIG. 1 is a sectional view of conventional bake apparatus for use in a spin-coater of semiconductor device manufacturing equipment
- FIG. 2 is a sectional view of bake apparatus for use in a spin-coater according to the present invention.
- Bake apparatus for use in a spin-coater according to the present invention will be described in detail with reference to FIG. 2 .
- FIG. 2 For purposes of clarity, though, a detailed description of known functions and systems associated with bake apparatus in general has been omitted.
- the bake apparatus includes a cylindrical chamber 200 , a hot plate 202 installed within the chamber 200 , a first circular buffer plate 208 disposed within an upper part of the chamber 200 , and a second circular buffer plate 212 disposed within the upper part of the chamber 200 at a predetermined distance above the first buffer plate 208 .
- a wafer 206 is mounted on the hot plate 202 , and the hot plate 202 heats the wafer 206 to predetermined temperature and thereby bakes a photoresist layer on the wafer 206 .
- the bake apparatus has an air injection passageway 204 for injecting a predetermined quantity of gas (air) into the chamber 200 .
- the first buffer plate 208 uniformly disperses the gas, that has been injected through the air injection passageway 204 , within the chamber 200 .
- the first buffer plate 208 has numerous discharge holes 210 extending therethrough.
- the second buffer plate 212 has numerous discharge holes 214 extending therethrough. The second buffer plate 212 uniformly disperses gas discharged through the numerous discharge holes 210 of the first buffer plate 208 , and uniformly discharges the gas from the space between the first and second buffer plates 208 and 212 .
- the chamber 200 of the bake apparatus has an air exhaust opening 216 through which the gas discharged through the holes 210 of the second buffer plate 212 is then exhausted to the outside.
- Gas is pre-heated to predetermined temperature appropriate for the bake process, and the heated gas is supplied into the chamber 200 through the air injection passageway 204 .
- a wafer 206 is transferred to the hot plate 202 . That is, as shown in FIG. 2 , the wafer 206 is supported horizontally on support pins above the upper surface of the hot plate 202 . Accordingly, the hot plate 202 does not contact the wafer 206 .
- the hot plate 206 is operated to radiate heat and thereby bake the wafer 206 and hence, the layer of photoresist thereon.
- the heated gas injected into the chamber 200 through the air injection passageway envelops the wafer 206 and thereby maintains the temperature of the wafer 206 .
- the gas is continuously supplied and exhausted through the discharge holes 210 of the first buffer plate 208 the discharge holes 214 of the second buffer plate 212 .
- the gas discharged through the discharge holes 214 of the second buffer plate 212 is exhausted to the outside through the air exhaust opening 216 .
- the discharge holes 210 of the first buffer plate 208 do not directly overlie the discharge holes 214 of the second buffer plate 212 , but are laterally offset therefrom. Also, the discharge holes 210 and 214 have the same diameter in each of the plates.
- the discharge holes 210 and 214 are present throughout the entire area of the upper part of the chamber 200 that spans the hot plate 202 and wafer 206 .
- the discharge holes 210 and/or 214 are arranged in a series of concentric circles from a central location above the center of the hot plate 202 to a peripheral location above the outer periphery of the hot plate 202 .
- the innermost circle extends over a central portion of the hot plate, and an outermost one of the circles extends over an outer peripheral portion of the hot plate.
- one of the discharge holes such as a discharge hole 214 of the second buffer plate 212 , may lie directly over the center of the hot plate 202 . Accordingly, the discharge holes discharge the gas uniformly from the chamber 200 . As a result, the layer of photoresist on the wafer 206 will have uniform characteristics, e.g., a uniform thickness, across the wafer. Hence, the baked photoresist can be used to form a pattern having a desired CD on the wafer 206 .
Abstract
Bake apparatus for use in baking a substrate, such as a semiconductor wafer, includes a chamber, a hot plate installed within the chamber, and first and second buffer plates for uniformly dispersing hot gas. The hot plate is configured to support the semiconductor wafer. The gas is injected into the chamber through an air passageway and is exhausted through an air exhaust opening. The first buffer plate is disposed within an upper part of the chamber so as to uniformly disperse the gas within the chamber. The second buffer plate is disposed above the first buffer plate. The first and second buffer plates each have a number of discharge holes by which the gas is uniformly discharged from the chamber to the exhaust opening.
Description
- 1. Field of the Invention
- The present invention relates to the manufacturing of semiconductor devices and the like. More specifically, the present invention relates to bake apparatus for baking a substrate, such as a semiconductor wafer, coated with photoresist.
- 2. Description of the Related Art
- Semiconductor devices are generally manufactured by subjecting a substrate, e.g., a wafer, to ion implantation, deposition, diffusion, photolithography and etching processes. The aim of these processes, especially the photolithography process, is to form a desired pattern on the wafer.
- The photolithography process includes coating, exposing and developing processes. In the coating process, the photoresist is dispensed onto the wafer and the wafer is rotated at a high speed so that the wafer is covered with a layer of photoresist to a desired thickness. In the exposure process, the wafer covered with the photoresist and a corresponding mask or reticle are aligned with each other. Then, the layer of photoresist is irradiated with light, such as ultraviolet light, through the mask or reticle so as to transfer a pattern of the mask or reticle to the layer of photoresist. In the developing process, the exposed layer of photoresist is developed to form a desired photoresist pattern. More specifically, either the exposed or non-exposed portion of the layer of photoresist is removed by a developing solution whereby the layer of photoresist is patterned.
- In the etching process, a target layer(s) underlying the photoresist pattern is etched using the photoresist pattern as an etch mask. As a result, the target layer(s) is/are patterned.
- The photolithography process additionally includes an HMDS(Hexamethyl disilane) process and one or more bake processes. The HMDS process is performed to improve the adhesion of the photoresist to the wafer. A bake process may be performed to remove moisture or an organic solvent from the wafer before the wafer is coated with the photoresist. Also, a bake process may be performed after the wafer has been coated with the photoresist to remove solvent from the photoresist.
- A chamber-type of bake apparatus is used to perform the bake process. The bake apparatus includes a chamber, and a hot plate disposed within the chamber. A wafer coated with the photoresist is set on the hot plate and baked at a predetermined temperature within the chamber.
- Recently, photolithography has been adapted for use in forming micro patterns on a wafer. In such applications, the extent to which the bake temperature is maintained throughout the bake process, i.e., the bake temperature uniformity, has a large affect on the photolithography or etching process. In other words, maintaining the temperature of the photoresist constant during the bake process is becoming more and more important in the manufacturing of semiconductor devices.
- More specifically, the speed at which the temperature of a wafer can be raised to the bake temperature once the wafer is transferred into the chamber of the bake apparatus, and the extent to which the bake temperature can be maintained uniform, are factors that directly affect the production yield of semiconductor devices. Thus, the bake apparatus should be capable of quickly raising the temperature of the wafer and of precisely controlling the temperature of the wafer during the bake process.
-
FIG. 1 illustrates conventional bake apparatus for baking a typical semiconductor wafer. - The bake apparatus includes a
chamber 100, ahot plate 102 installed within thechamber 100, and abuffer plate 108 that is disposed at an upper part of thechamber 100 and has two discharge holes 1 10 extending therethrough. Awafer 106 is mounted on thehot plate 102, and thehot plate 102 heats thewafer 106 to a predetermined temperature and thereby bakes a photoresist layer on thewafer 106. - Also, the bake apparatus has an
air injection passage 104 through which a predetermined quantity of gas (air) is injected into thechamber 100. The gas is pre-heated to predetermined temperature appropriate for the bake process. Thebuffer plate 108 uniformly disperses the gas within thechamber 100. In addition, the bake apparatus has anexhaust passageway 112 through which the gas is exhausted to the outside via thedischarge holes 110 of thebuffer plate 108. Thebuffer plate 108 is circular. Thedischarge holes 110 have the same diameter and are disposed at the same distance from the center of thecircular buffer plate 108. - Also, support pins (not shown) extend from an upper surface of the
hot plate 102. These pins support thewafer 106 horizontally above the upper surface of thehot plate 102 so that thehot plate 102 is not in direct contact with thewafer 106. - In the conventional bake apparatus, the gas adjacent the portion of the
buffer plate 108 where thedischarge holes 110 are present is exhausted quickly, whereas the gas adjacent the other portions of thebuffer plate 108 is exhausted slowly. In other words, the gas is not exhausted uniformly from thechamber 100. This causes variations in the thickness of the layer of photoresist which, in turn, results in defects in the pattern formed using the patterned photoresist layer as an etch mask. In particular, a pattern having an unsatisfactory critical dimension (CD) is formed on the wafer. - Accordingly, an object of the present invention is to provide bake apparatus for use in a spin-coater, which is capable of uniformly exhausting air from the chamber of the apparatus.
- According to an aspect of the invention, the bake apparatus includes a chamber, a hot plate installed within the chamber, and at least one buffer plate disposed in an upper part of the chamber and having discharge holes configured so that gas will be discharged uniformly from the chamber. The gas is injected into the chamber through an air injection passageway. The gas is exhausted to the outside via an exhaust opening. The at least one buffer plate is interposed between the hot plate and the location at which the exhaust opening communicates with the interior of the chamber.
- Preferably, the discharge holes are arranged in a series of concentric circles whose centers coincide at a central portion of the buffer plate. The innermost circle extends over a central portion of the hot plate, and an outermost one of the circles extends over an outer peripheral portion of the hot plate. The discharge holes preferably span the entire area above the hot plate and hence, a wafer when the wafer is supported on the hot plate.
- According to another aspect of the invention, the bake apparatus includes a chamber, a hot plate installed within the chamber, and first and second buffer plates disposed within an upper part of the chamber. The first buffer plate disposed has a plurality of discharge holes therethrough such that gas is uniformly dispersed by the first buffer plate within the chamber is discharged through the discharge holes. The second buffer plate is disposed within the chamber above the first buffer plate and has a plurality of discharge holes therethrough. Thus, the second buffer plate uniformly disperses gas in the space between the first and second buffer plates. The discharge holes are arranged so that the gas is discharged uniformly from the chamber.
- Preferably, the discharge holes of the second buffer plate are laterally offset relative to the discharge holes of the first buffer plate so as to not directly overlie the discharge holes of the first buffer plate.
- The present invention will become more fully understood from the detailed description of the preferred embodiments thereof given hereinbelow with reference to the accompanying drawings, wherein:
-
FIG. 1 is a sectional view of conventional bake apparatus for use in a spin-coater of semiconductor device manufacturing equipment; and -
FIG. 2 is a sectional view of bake apparatus for use in a spin-coater according to the present invention. - Bake apparatus for use in a spin-coater according to the present invention will be described in detail with reference to
FIG. 2 . For purposes of clarity, though, a detailed description of known functions and systems associated with bake apparatus in general has been omitted. - Referring to
FIG. 2 , the bake apparatus includes acylindrical chamber 200, ahot plate 202 installed within thechamber 200, a firstcircular buffer plate 208 disposed within an upper part of thechamber 200, and a secondcircular buffer plate 212 disposed within the upper part of thechamber 200 at a predetermined distance above thefirst buffer plate 208. Awafer 206 is mounted on thehot plate 202, and thehot plate 202 heats thewafer 206 to predetermined temperature and thereby bakes a photoresist layer on thewafer 206. - In addition, the bake apparatus has an
air injection passageway 204 for injecting a predetermined quantity of gas (air) into thechamber 200. Thefirst buffer plate 208 uniformly disperses the gas, that has been injected through theair injection passageway 204, within thechamber 200. Also, thefirst buffer plate 208 has numerous discharge holes 210 extending therethrough. Likewise, thesecond buffer plate 212 has numerous discharge holes 214 extending therethrough. Thesecond buffer plate 212 uniformly disperses gas discharged through the numerous discharge holes 210 of thefirst buffer plate 208, and uniformly discharges the gas from the space between the first andsecond buffer plates chamber 200 of the bake apparatus has anair exhaust opening 216 through which the gas discharged through theholes 210 of thesecond buffer plate 212 is then exhausted to the outside. - The operation of the bake apparatus will now be described in more detail.
- Gas is pre-heated to predetermined temperature appropriate for the bake process, and the heated gas is supplied into the
chamber 200 through theair injection passageway 204. - A
wafer 206 is transferred to thehot plate 202. That is, as shown inFIG. 2 , thewafer 206 is supported horizontally on support pins above the upper surface of thehot plate 202. Accordingly, thehot plate 202 does not contact thewafer 206. - The
hot plate 206 is operated to radiate heat and thereby bake thewafer 206 and hence, the layer of photoresist thereon. The heated gas injected into thechamber 200 through the air injection passageway envelops thewafer 206 and thereby maintains the temperature of thewafer 206. The gas is continuously supplied and exhausted through the discharge holes 210 of thefirst buffer plate 208 the discharge holes 214 of thesecond buffer plate 212. The gas discharged through the discharge holes 214 of thesecond buffer plate 212 is exhausted to the outside through theair exhaust opening 216. - The discharge holes 210 of the
first buffer plate 208 do not directly overlie the discharge holes 214 of thesecond buffer plate 212, but are laterally offset therefrom. Also, the discharge holes 210 and 214 have the same diameter in each of the plates. The discharge holes 210 and 214 are present throughout the entire area of the upper part of thechamber 200 that spans thehot plate 202 andwafer 206. Preferably, the discharge holes 210 and/or 214 are arranged in a series of concentric circles from a central location above the center of thehot plate 202 to a peripheral location above the outer periphery of thehot plate 202. The innermost circle extends over a central portion of the hot plate, and an outermost one of the circles extends over an outer peripheral portion of the hot plate. Also, one of the discharge holes, such as adischarge hole 214 of thesecond buffer plate 212, may lie directly over the center of thehot plate 202. Accordingly, the discharge holes discharge the gas uniformly from thechamber 200. As a result, the layer of photoresist on thewafer 206 will have uniform characteristics, e.g., a uniform thickness, across the wafer. Hence, the baked photoresist can be used to form a pattern having a desired CD on thewafer 206. - Finally, modifications and variations of the present invention will be apparent to those skilled in the art. For example, although the present invention has been described as having first and
second buffer plates
Claims (6)
1. Bake apparatus for use in baking a substrate, comprising:
a chamber;
a hot plate disposed within the chamber;
an air injection passageway communicating with the interior of the chamber such that gas can be injected therethrough into the chamber;
an air exhaust opening communicating with the interior of the chamber at an upper part thereof and through which gas is exhausted from the chamber to the outside; and
a first buffer plate disposed within the chamber at the upper part thereof as interposed between the hot plate and the location at which the exhaust opening communicates with the interior of the chamber, the first buffer plate having a plurality of discharge holes therethrough such that gas within the chamber is exhausted through the exhaust opening via the discharge holes, and respective ones of the discharge holes lying along each of a series of concentric circles whose centers coincide at a central portion of the buffer plate.
2. The apparatus of claim 1 , further comprising a second buffer plate, the second buffer plate disposed within the chamber at the upper part thereof as spaced above the first buffer plate and interposed between the first buffer plate and the location at which the exhaust opening communicates with the interior of the chamber, the second buffer plate having a plurality of discharge holes therethrough such that gas within the chamber is exhausted through the exhaust opening via the discharge holes of the second buffer plate.
3. The apparatus of claim 2 , wherein the discharge holes of the second buffer plate are laterally offset relative to the discharge holes of the first buffer plate so as to not directly overlie the discharge holes of the first buffer plate.
4. The apparatus of claim 1 , wherein an innermost one of the circles along which some of the discharge holes lie extends over a central portion of the hot plate, and an outermost one of the circles along which some of the discharge holes lie extends over an outer peripheral portion of the hot plate.
5. Bake apparatus for use in baking a substrate, comprising:
a chamber;
a hot plate disposed within the chamber;
an air injection passageway communicating with the interior of the chamber such that gas can be injected therethrough into the chamber;
an air exhaust opening communicating with the interior of the chamber at an upper part thereof and through which gas is exhausted from the chamber to the outside;
a first buffer plate disposed within the chamber at the upper part thereof as interposed between the hot plate and the location at which the exhaust opening communicates with the interior of the chamber, the first buffer plate having a plurality of discharge holes therethrough such that gas within the chamber is discharged through the discharge holes; and
a second buffer plate disposed within the chamber at the upper part thereof as spaced above the first buffer plate and interposed between the first buffer plate and the location at which the exhaust opening communicates with the interior of the chamber, the second buffer plate having a plurality of discharge holes therethrough such that gas within the chamber is exhausted through the exhaust opening via the discharge holes of the second buffer plate.
6. The apparatus of claim 5 , wherein the discharge holes of the second buffer plate are laterally offset relative to the discharge holes of the first buffer plate so as to not directly overlie the discharge holes of the first buffer plate.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040030370A KR100549953B1 (en) | 2004-04-30 | 2004-04-30 | Bake device of spinner device |
KR2004-0030370 | 2004-04-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
US20050244759A1 true US20050244759A1 (en) | 2005-11-03 |
US7491913B2 US7491913B2 (en) | 2009-02-17 |
Family
ID=35187493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/095,554 Expired - Fee Related US7491913B2 (en) | 2004-04-30 | 2005-04-01 | Bake apparatus for use in spin-coating equipment |
Country Status (2)
Country | Link |
---|---|
US (1) | US7491913B2 (en) |
KR (1) | KR100549953B1 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100206231A1 (en) * | 2007-09-04 | 2010-08-19 | Eugene Technology Co., Ltd. | Exhaust unit, exhaust method using the exhaust unit, and substrate processing apparatus including the exhaust unit |
CN103017185A (en) * | 2011-09-21 | 2013-04-03 | 湖北中烟工业有限责任公司 | Smoke exhaust device used for cigarette ignition tendency test |
AT516575A3 (en) * | 2014-11-25 | 2017-11-15 | Suss Microtec Lithography Gmbh | Baking apparatus for a wafer coated with a coating containing a solvent |
WO2018113090A1 (en) * | 2016-12-19 | 2018-06-28 | 惠科股份有限公司 | Machine and method for baking substrate |
WO2019129038A1 (en) * | 2017-12-26 | 2019-07-04 | 武汉华星光电技术有限公司 | Photoresist softbaking apparatus |
CN114594665A (en) * | 2022-05-10 | 2022-06-07 | 上海芯源微企业发展有限公司 | Tray cover, control method thereof and baking equipment |
JP7413164B2 (en) | 2020-06-26 | 2024-01-15 | 東京エレクトロン株式会社 | Heat treatment unit, substrate processing equipment, heat treatment method, and storage medium |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100690300B1 (en) * | 2006-04-08 | 2007-03-12 | 주식회사 싸이맥스 | Heating appatatus of processing chamber for semi-conductor production |
KR20230108515A (en) | 2022-01-11 | 2023-07-18 | 주식회사 한화 | Layer deposition apparatus having exhaust ports for multi-stage substrates |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5181012A (en) * | 1990-09-27 | 1993-01-19 | Yazaki Corporation | Display apparatus for automobiles |
US5893637A (en) * | 1995-11-28 | 1999-04-13 | Nippondenso Co., Ltd. | Electroluminescent display apparatus for a vehicle |
US5916631A (en) * | 1997-05-30 | 1999-06-29 | The Fairchild Corporation | Method and apparatus for spin-coating chemicals |
US6115008A (en) * | 1998-02-12 | 2000-09-05 | Lear Automotive Dearborn, Inc. | Transparent EL display |
US6181301B1 (en) * | 1996-07-26 | 2001-01-30 | Denso Corporation | Combined display panel |
US6185370B1 (en) * | 1998-09-09 | 2001-02-06 | Tokyo Electron Limited | Heating apparatus for heating an object to be processed |
US20020098283A1 (en) * | 1994-10-27 | 2002-07-25 | Emir Gurer | Method of uniformly coating a substrate |
US20050003600A1 (en) * | 2001-08-01 | 2005-01-06 | Shigeru Kasai | Gas treating device and gas treating method |
-
2004
- 2004-04-30 KR KR1020040030370A patent/KR100549953B1/en not_active IP Right Cessation
-
2005
- 2005-04-01 US US11/095,554 patent/US7491913B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5181012A (en) * | 1990-09-27 | 1993-01-19 | Yazaki Corporation | Display apparatus for automobiles |
US20020098283A1 (en) * | 1994-10-27 | 2002-07-25 | Emir Gurer | Method of uniformly coating a substrate |
US5893637A (en) * | 1995-11-28 | 1999-04-13 | Nippondenso Co., Ltd. | Electroluminescent display apparatus for a vehicle |
US6181301B1 (en) * | 1996-07-26 | 2001-01-30 | Denso Corporation | Combined display panel |
US5916631A (en) * | 1997-05-30 | 1999-06-29 | The Fairchild Corporation | Method and apparatus for spin-coating chemicals |
US6115008A (en) * | 1998-02-12 | 2000-09-05 | Lear Automotive Dearborn, Inc. | Transparent EL display |
US6185370B1 (en) * | 1998-09-09 | 2001-02-06 | Tokyo Electron Limited | Heating apparatus for heating an object to be processed |
US20050003600A1 (en) * | 2001-08-01 | 2005-01-06 | Shigeru Kasai | Gas treating device and gas treating method |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100206231A1 (en) * | 2007-09-04 | 2010-08-19 | Eugene Technology Co., Ltd. | Exhaust unit, exhaust method using the exhaust unit, and substrate processing apparatus including the exhaust unit |
US8771417B2 (en) | 2007-09-04 | 2014-07-08 | Eugene Technology Co., Ltd. | Exhaust unit, exhaust method using the exhaust unit, and substrate processing apparatus including the exhaust unit |
CN103017185A (en) * | 2011-09-21 | 2013-04-03 | 湖北中烟工业有限责任公司 | Smoke exhaust device used for cigarette ignition tendency test |
AT516575A3 (en) * | 2014-11-25 | 2017-11-15 | Suss Microtec Lithography Gmbh | Baking apparatus for a wafer coated with a coating containing a solvent |
US10825701B2 (en) | 2014-11-25 | 2020-11-03 | Suss Microtec Lithography Gmbh | Baking device for a wafer coated with a coating containing a solvent |
AT516575B1 (en) * | 2014-11-25 | 2022-07-15 | Suss Microtec Lithography Gmbh | Baking device for a wafer coated with a coating containing a solvent |
WO2018113090A1 (en) * | 2016-12-19 | 2018-06-28 | 惠科股份有限公司 | Machine and method for baking substrate |
WO2019129038A1 (en) * | 2017-12-26 | 2019-07-04 | 武汉华星光电技术有限公司 | Photoresist softbaking apparatus |
JP7413164B2 (en) | 2020-06-26 | 2024-01-15 | 東京エレクトロン株式会社 | Heat treatment unit, substrate processing equipment, heat treatment method, and storage medium |
CN114594665A (en) * | 2022-05-10 | 2022-06-07 | 上海芯源微企业发展有限公司 | Tray cover, control method thereof and baking equipment |
Also Published As
Publication number | Publication date |
---|---|
KR20050104917A (en) | 2005-11-03 |
US7491913B2 (en) | 2009-02-17 |
KR100549953B1 (en) | 2006-02-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7491913B2 (en) | Bake apparatus for use in spin-coating equipment | |
JP3983831B2 (en) | Substrate baking apparatus and substrate baking method | |
KR101006800B1 (en) | Method for improving surface roughness of processed film of substrate and apparatus for processing substrate | |
US7343698B2 (en) | Reduced pressure drying apparatus and reduced pressure drying method | |
JP4328667B2 (en) | Method for improving surface roughness of substrate processing film and substrate processing apparatus | |
US20080011737A1 (en) | Hot plate and process for producing the same | |
KR20010051688A (en) | Substrate Processing Unit and Processing Method | |
US6579373B2 (en) | Substrate processing apparatus and substrate processing method | |
KR20050121913A (en) | Apparatus for baking | |
JP4267809B2 (en) | Substrate processing apparatus and processing method | |
KR100601979B1 (en) | Baking apparatus for semiconductor wafer | |
US5849582A (en) | Baking of photoresist on wafers | |
WO2007094229A1 (en) | Substrate treating method, and computer-readable storage medium | |
KR200243530Y1 (en) | Bake apparatus for semiconductive wafer | |
JP2003158061A (en) | Substrate processing apparatus and substrate processing method | |
JP3519664B2 (en) | Heat treatment equipment | |
JP2003156858A (en) | Method and system for treating substrate | |
JP3847473B2 (en) | Substrate heat treatment apparatus and substrate heat treatment method | |
JP4294893B2 (en) | Substrate heat treatment apparatus, rectifying mechanism thereof, and rectifying method | |
JPS6331118A (en) | Baking furnace | |
JP2020004933A (en) | Substrate heat treatment apparatus and substrate heat treatment method | |
JP2011066119A (en) | Apparatus and method of manufacturing semiconductor device | |
JPH0621233Y2 (en) | Baking equipment | |
KR20060109128A (en) | Baking apparatus having a rotational plate | |
JP3623369B2 (en) | Semiconductor manufacturing equipment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SAMSUNG ELECTRONICS CO., LTD., KOREA, REPUBLIC OF Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LEE, MYOUNG-KUY;REEL/FRAME:016443/0353 Effective date: 20050309 |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
REMI | Maintenance fee reminder mailed | ||
LAPS | Lapse for failure to pay maintenance fees | ||
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20170217 |