US20050077182A1 - Volume measurement apparatus and method - Google Patents
Volume measurement apparatus and method Download PDFInfo
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- US20050077182A1 US20050077182A1 US10/683,917 US68391703A US2005077182A1 US 20050077182 A1 US20050077182 A1 US 20050077182A1 US 68391703 A US68391703 A US 68391703A US 2005077182 A1 US2005077182 A1 US 2005077182A1
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
- C25D21/14—Controlled addition of electrolyte components
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
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Abstract
Embodiments of the invention generally provide an electrochemical processing system configured to provide selected amounts of electrolyte composition components for single plating process. The selected amounts of components to be added to an electrolyte composition may be achieved by a volume measurement device using an ultrasonic sensor to measure volume of a vessel.
Description
- 1. Field of the Invention
- Embodiments of the invention generally relate to an electrochemical processing system and methods for electrochemically depositing conductive materials on substrates.
- 2. Description of the Related Art
- Metallization of sub-quarter micron sized features is a foundational technology for present and future generations of integrated circuit manufacturing processes. More particularly, in devices such as ultra large scale integration-type devices, i.e., devices having integrated circuits with more than a million logic gates, the multilevel interconnects that lie at the heart of these devices are generally formed by filling high aspect ratio, i.e., greater than about 4:1, interconnect features with a conductive material, such as copper or aluminum. Conventionally, deposition techniques such as chemical vapor deposition (CVD) and physical vapor deposition (PVD) have been used to fill these interconnect features. However, as the interconnect sizes decrease and aspect ratios increase, void-free interconnect feature fill via conventional metallization techniques becomes increasingly difficult. Therefore, plating techniques, i.e., electrochemical plating (ECP) and electroless plating, have emerged as promising processes for void free filling of sub-quarter micron sized high aspect ratio interconnect features in integrated circuit manufacturing processes.
- In an ECP process, for example, sub-quarter micron sized high aspect ratio features formed into the surface of a substrate (or a layer deposited thereon) may be efficiently filled with a conductive material, such as copper. ECP plating processes are generally two stage processes, wherein a seed layer is first formed over the surface features of the substrate, and then the surface features of the substrate are exposed to an electrolyte solution, while an electrical bias is applied between the seed layer and a copper anode positioned within the electrolyte solution. The electrolyte solution generally contains ions to be plated onto the surface of the substrate, and therefore, the application of the electrical bias causes these ions to be urged out of the electrolyte solution and to be plated onto the biased seed layer, thus depositing a layer of the ions on the substrate surface that may fill the features. Electrolyte solutions also include chemical components to improve ion transition into and out of the electrolyte solution, to improve deposition rates, and to develop desired deposition profiles.
- However, electrolyte solutions are sensitive to the changes in the levels of components of the composition. Minor changes in the compositions may result in compositions having variable deposition rates and less than desirable deposition profiles. Prior processes for introducing chemical components to electrolyte compositions have less than desired results, including concentration spikes and non-uniformity of electrolyte composition at the point of use. The prior processes can result in less than desirous deposition results, and excess use of electrolyte composition, which can result in increase cost of consumables and operation costs.
- Additionally, previous systems for precisely measuring volumes to be added to electrolyte solutions have utilized fixed volumes of deliveries, which are unsuitable for effectively and efficiently instituting changes in constituent composition of electrolyte solutions without hardware modification.
- Therefore, there is a need for an improved electrochemical plating system configured to provide electrolyte compositions for an electrochemical plating process.
- Embodiments of the invention generally provide an electrochemical processing system configured to provide measured amounts of chemical components, electrolyte compositions, or both for a plating process or other chemical processes including surface preparation processes, such as substrate cleaning, etching or deoxidizing. In one aspect, a method is provided for supplying a fluid to a substrate processing apparatus including measuring a first level in the vessel with a first ultrasonic signal to provide a first volume measurement, delivering at least one chemical component to the vessel, measuring a second level in the vessel with a second ultrasonic signal to provide a second volume measurement, determining the difference in volume between the first volume measurement and the second volume measurement, comparing the difference in volume with a pre-determined value, and discharging chemical components from the vessel to the substrate processing apparatus.
- In another aspect, a method is provided for electroplating at least one layer onto a surface of a substrate surface including positioning the substrate in a plating cell on a unitary system platform for a plating technique, supplying an electrolyte composition to the plating cell by supplying an electrolyte and an amount of one or more chemical components, wherein the amount of one or more chemical components are provided by measuring the first level of a vessel with a first ultrasonic signal to provide a first volume measurement, delivering at least one chemical component to the vessel, measuring a second level in the vessel with a second ultrasonic signal to provide a second volume measurement, determining the difference in volume between the first volume measurement and the second volume measurement, comparing the difference in volume with a pre-determined value, and discharging chemical components from the vessel to the plating cell, and depositing a conductive material from the electrolyte composition to the surface of the substrate.
- In another aspect, an electrochemical processing system is provided including a system platform having one or more processing cells positioned thereon, at least one robot positioned to transfer substrates between the one or more processing cells, and a fluid delivery system in fluid communication with each of the one or more processing cells, the fluid delivery system including one or more chemical component sources, a metering pump in fluid communication with each of the chemical component sources, an electrolyte source in fluid communication with the metering pump, and a vessel in fluid communication with the metering pump at an input and with the one or more processing cells at an output, the vessel comprising a charging cell, an ultrasonic sensor, and a controller.
- In another aspect, an electrochemical processing system is provided including a processing system base having one or more process cell locations thereon, at least two electrochemical plating cells positioned at two of the process cell locations, at least one spin rinse dry cell positioned at one of the process cell locations, at least one substrate bevel clean cell positioned at another one of the process cell locations, and a fluid delivery system in fluid communication with each of the one or more processing cells, the fluid delivery system including one or more chemical component sources, a metering pump in fluid communication with each of the chemical component sources, a first virgin electrolyte source in fluid communication with the metering pump, and a vessel in fluid communication with the metering pump at an input and with one or more processing cells at an output, the vessel comprising a charging cell, an ultrasonic sensor, and a controller.
- So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
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FIG. 1 is a top plan view of one embodiment of an electrochemical plating system of the invention; -
FIG. 2A is a partial sectional view of one embodiment of an electrochemical process cell; -
FIG. 2B is a partial sectional view of another embodiment of an electrochemical process cell; -
FIG. 3 is a schematic diagram of one embodiment of a plating solution delivery system; -
FIG. 4A is a schematic diagram of one embodiment of a volume measurement device; -
FIG. 4B is a perspective view of one embodiment of a volume measurement device; -
FIG. 5 is a partial sectional view of one embodiment of a process cell configured to remove deposited material from an edge of a substrate; -
FIG. 6 is a partial sectional view of one embodiment of a process cell configured to spin, rinse and dry a substrate; and -
FIG. 7 is a flow diagram illustrating one embodiment of a process for monitoring chemical component volume. - Embodiments of the invention generally provide an electrochemical plating system configured to plate conductive materials, such as metals, on a semiconductor substrate using a device for accurately measuring component quantities, for example, for use in apparatus implementing multiple chemistries on a single plating platform. Embodiments of the invention contemplate that the measurement device may be used for measuring, adding, or mixing chemical components for various plating processes, including, but not limited to direct plating on a barrier layer, alloy plating, alloy plating combined with convention metal plating, plating on a thin seed layer, optimized feature fill and bulk fill plating, plating multiple layers with minimal defects, or any other plating process where more than one chemistry may be beneficial to a plating process.
- While the following description of the volume measurement device is directed to use in an electrochemical processing system (ECP), the invention contemplates the use of the invention where precise volumes of liquids may be added to form processing composition. For example the volume measurement device may be used in combination with chemical mechanical polishing apparatus, such as the Mirra® Mesa™ polishing system and the Reflexion™ processing system, commercially available from Applied Materials, Inc., of Santa Clara, Calif., wet clean process apparatus, such as the Tempest™ wet clean apparatus available from Applied Materials, Inc., of Santa Clara, Calif., and other liquid processing systems.
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FIG. 1 is a top plan view of one embodiment of an electrochemical processing system (ECP) 100 of the present invention.ECP system 100 generally includes aprocessing base 113 having arobot 120 centrally positioned thereon. Therobot 120 generally includes one ormore robot arms robot 120 and the accompanyingblades robot 120 may insert and remove substrates to and from a plurality ofprocessing locations base 113. -
ECP system 100 further includes a factory interface (FI) 130. FI 130 generally includes at least oneFI robot 132 positioned adjacent a side of the FI that is adjacent theprocessing base 113. This position ofrobot 132 allows the robot to access substrate cassettes l34 to retrieve asubstrate 126 therefrom and then deliver thesubstrate 126 to one ofprocessing cells robot 132 may be used to retrieve substrates from one of theprocessing cells situation robot 132 may deliver thesubstrate 126 back to one of thecassettes 134 for removal from thesystem 100. Additionally,robot 132 is also configured to access ananneal chamber 135 positioned in communication with FI 130. Theanneal chamber 135 generally includes a two position annealing chamber, wherein a cooling plate-orposition 136 and a heating plate orposition 137 are positioned adjacently with asubstrate transfer robot 140 positioned proximate thereto, e.g., between the two stations. Therobot 140 is generally configured to move substrates between therespective heating 137 andcooling plates 136. - Generally,
process locations -
FIG. 2A is a cross sectional view of one embodiment of a processing cell (FIG. 2A illustrates an exemplary electrochemical plating cell) that may be implemented in any one ofprocessing locations processing system 100 as shown inFIG. 1 . Generally, however, theexemplary processing system 100 is configured to include four electrochemical plating cells at processinglocations Processing locations processing locations - Returning to
FIG. 2A , theelectrochemical processing cell 150 generally includes ahead assembly 211, ananode assembly 220, aninner basin 272, and anouter basin 240. Theouter basin 240 is coupled to abase 160 and circumscribes theinner basin 272. The inner andouter basins outer basins inner basin 272 is typically configured to conform to the substrate plating surface and the shape of the substrate being processed through the system, generally having a circular or rectangular shape. In one embodiment, theinner basin 272 is a cylindrical ceramic tube having an inner diameter that has about the same dimension as or slightly larger than the diameter of a substrate being plated in thecell 150. Theouter basin 272 generally includes achannel 248 for catching plating fluids flowing out of theinner basin 272. Theouter basin 272 also has adrain 218 formed therethrough that couples thechannel 248 to a reclamation system for processing, recycling and/or disposal of used plating fluids. - The
head assembly 211 is mounted to ahead assembly frame 252. Thehead assembly frame 252 includes a mountingpost 254 and acantilever arm 256. The mountingpost 254 is coupled to thebase 160 and thecantilever arm 256 extends laterally from an upper portion of the mountingpost 254 and is generally adapted to rotate about a vertical axis of the mountingpost 254 to allow movement of thehead assembly 211 over or clear of thebasins head assembly 211 is generally attached to a mountingplate 260 disposed at the distal end of thecantilever arm 256. The lower end of thecantilever arm 256 is connected to acantilever arm actuator 268, such as a pneumatic cylinder, mounted on the mountingpost 254. Thecantilever arm actuator 268 provides pivotal movement of thecantilever arm 256 with respect to the joint between thecantilever arm 256 and the mountingpost 254. When thecantilever arm actuator 268 is retracted, thecantilever arm 256 moves thehead assembly 211 away from theanode assembly 220 disposed in theinner basin 272 to provide the spacing required to remove and/or replace theanode assembly 220 from thefirst process cell 150. When thecantilever arm actuator 268 is extended, thecantilever arm 256 moves thehead assembly 211 axially toward theanode assembly 220 to position the substrate in thehead assembly 211 in a processing position. Thehead assembly 211 may also tilt to orientate a substrate held therein in at an angle from horizontal. - The
head assembly 211 generally includes asubstrate holder assembly 250 and asubstrate assembly actuator 258. Thesubstrate assembly actuator 258 is mounted onto the mountingplate 260, and includes ahead assembly shaft 262 that extends downwardly through the mountingplate 260. The lower end of thehead assembly shaft 262 is connected to thesubstrate holder assembly 250 to position thesubstrate holder assembly 250 in a processing position and in a substrate loading position. Thesubstrate assembly actuator 258 additionally may be configured to provide rotary motion to thehead assembly 211. In one embodiment, thehead assembly 211 is rotated between about 2 rpm and about 50 rpm during an electroplating process, and may be rotated between about 5 and about 20 rpm. Thehead assembly 211 can also be rotated as thehead assembly 211 is lowered to position the substrate in contact with the plating solution in the process cell as well as when thehead assembly 211 is raised to remove the substrate from the plating solution in the process cell. Thehead assembly 211 may be rotated at a high speed (i.e., >20 rpm) after thehead assembly 211 is lifted from the process cell to enhance removal of residual plating solution from thehead assembly 211 and substrate. - The
substrate holder assembly 250 generally includes athrust plate 264 and acathode contact ring 266. Thecathode contact ring 266 is configured to electrically contact the surface of the substrate to be plated. Typically, the substrate has a seed layer of metal, such as copper, deposited on the feature side of the substrate. Apower source 246 is coupled between thecathode contact ring 266 and theanode assembly 220 and provides an electrical bias that drives the plating process. - The
thrust plate 264 and thecathode contact ring 266 are suspended from ahanger plate 236. Thehanger plate 236 is coupled to thehead assembly shaft 262. Thecathode contact ring 266 is coupled to thehanger plate 236 by hanger pins 238. The hanger pins 238 allows thecathode contact ring 266 when mated against theinner basin 272, to move to closer to thehanger plate 236, thus allowing the substrate held by thethrust plate 264 to be sandwiched between thehanger plate 236 and thrustplate 264 during processing, thereby ensuring good electrical contact between the seed layer of the substrate and thecathode contact ring 266. - The
anode assembly 220 is generally positioned within a lower portion of theinner basin 272 below thesubstrate holder assembly 250. Theanode assembly 220 generally includes one ormore anodes 244 and adiffusion plate 222. Theanode 244 is typically disposed in the lower end of theinner basin 272 and thediffusion plate 222 is disposed between theanode 244 and the substrate held by thesubstrate holder assembly 250 at the top of theinner basin 272. Theanode 244 anddiffusion plate 222 are generally maintained in a spaced-apart relation byinsulative spacer 224. Thediffusion plate 222 is typically attached to and substantially spans the inner opening of theinner basin 272. Thediffusion plate 222 is generally permeable to the plating solution and is typically fabricated from a plastic or ceramic material, for example an olefin such as a spunbonded polyester film: Thediffusion plate 222 generally operates as a fluid flow restrictor to improve flow uniformity across the surface of thesubstrate 126 being plated. Thediffusion plate 222 also operates to damp electrical variations in the electrochemical cell, i.e., to control electrical flux, which improves plating uniformity. Alternatively, thediffusion plate 222 may be: fabricated from a hydrophilic plastic, such as treated PE, PVDF, PP, or other porous or permeable material that provides electrically resistive damping characteristics. - The
anode assembly 220 may include aconsumable anode 244 that serves as a metal source for the plating process. Alternatively, theanode 244 may be a non-consumable anode, and the metal to be electroplated is supplied within the plating solution from the platingsolution delivery system 111. Theanode assembly 220 may be a self-enclosed module having a porous enclosure preferably made of the same metal as the metal to be electroplated, such as copper. Alternatively, the enclosure may be fabricated from porous materials, such as ceramics or polymeric membranes. Exemplary consumable and non-consumable anodes include copper/doped copper and platinum, respectively. Theanode 244 is typically metal particles, wires, and/or a perforated sheet and is typically manufactured from the material to be deposited on the substrate, such as copper, aluminum, gold, silver, platinum, tungsten, copper phosphate, noble metal or other materials which can be electrochemically deposited on the substrate. Theanode 244 may be porous, perforated, permeable or otherwise configured to allow passage of the plating solution therethrough. Alternatively, theanode 244 may be solid. As compared to a non-consumable anode, the consumable (i.e., soluble) anode provides gas-generation-free plating solution and minimizes the need to constantly replenish the metal in the plating solution. In the embodiment depicted inFIG. 2A , theanode 244 is a solid copper disk. - An
electrolyte inlet 216 is formed through theinner basin 272 and is coupled to the platingsolution delivery system 111. The plating solution entering theinner basin 272 through theelectrolyte inlet 216 flows through or around theanode assembly 220 upward toward the surface of thesubstrate 126 positioned on the upper end of theinner basin 272. The plating solution flows across the substrate's surface and through slots (not shown) in thecathode contact ring 266 to a passage formed in the outer bas in 240. The bias applied by thepower source 246 between the substrate (through the cathode contact ring 266) and theanodes 244 causes metal ions from the plating fluids and/or anode to deposit on the surface of the substrate. Examples of process cells that may be adapted to benefit from the invention are described in U.S. patent application Ser. No. 09/905,513, filed Jul. 13, 2001, and in U.S. patent application Ser. No. 10/061,126, filed Jan. 30, 2002, both of which incorporated by reference in their entireties. -
FIG. 2B is partial sectional view of another embodiment of an exemplary processing cell, and more particularly, an exemplaryelectrochemical plating cell 200. Theelectrochemical plating cell 200 generally includes anouter basin 201 and aninner basin 202 positioned withinouter basin 201.Inner basin 202 is generally configured to contain a plating solution that is used to plate a metal, e.g., copper, onto a substrate during an electrochemical plating process. During the plating process, the plating solution is generally continuously supplied to inner basin 202 (at about 1 gallon per minute for a 10 liter plating cell, for example), and therefore, the plating solution continually overflows the uppermost point ofinner basin 202 and runs intoouter basin 201. The overflow plating solution is then collected byouter basin 201 and drained therefrom for recirculation intoinner basin 202. Platingcell 200 is generally positioned at a tilt angle, i.e., theframe portion 203 of platingcell 200 is generally elevated on one side such that the components of platingcell 200 are tilted between about 3° and about 30°. Therefore, in order to contain an adequate depth of plating solution withininner basin 202 during plating operations, the uppermost portion ofbasin 202 may be extended upward on one side of platingcell 200, such that the uppermost point ofinner basin 202 is generally horizontal and allows for contiguous overflow of the plating solution supplied thereto around the perimeter ofbasin 202. - The
frame member 203 of platingcell 200 generally includes anannular base member 204 secured to framemember 203. Sinceframe member 203 is elevated on one side, the upper surface ofbase member 204 is generally tilted from the horizontal at an angle that corresponds to the angle offrame member 203 relative to a horizontal position.Base member 204 includes an annular or disk shaped recess formed therein, the annular recess being configured to receive a disk shapedanode member 205.Base member 204 further includes a plurality of fluid inlets/drains 209 positioned on a lower surface thereof. Each of the fluid inlets/drains 209 are generally configured to individually supply or drain a fluid to or from either the anode compartment or the cathode compartment of platingcell 200.Anode member 205 generally includes a plurality ofslots 207 formed therethrough, wherein theslots 207 are generally positioned in parallel orientation with each other across the surface of theanode 205. The parallel orientation allows for dense fluids generated at the anode surface to flow downwardly across the anode surface and into one of theslots 207. Platingcell 200 further includes amembrane support assembly 206.Membrane support assembly 206 is generally secured at an outer periphery thereof tobase member 204, and includes an interior region configured to allow fluids to pass therethrough. Amembrane 208 is stretched across thesupport 206 and operates to fluidly separate a catholyte chamber and anolyte chamber portions of the plating cell. The membrane support assembly may include an o-ring type seal positioned near a perimeter of the membrane, wherein the seal is configured to prevent fluids from traveling from one side of the membrane secured on themembrane support 206 to the other side of the membrane. Adiffusion plate 210 is positioned above themembrane 208 and is configured similarly todiffusion plate 222 illustrated inFIG. 2A . - In operation, assuming a tilted implementation is utilized, the plating
cell 200 will generally immerse a substrate into a plating solution contained withininner basin 202. Once the substrate is immersed in the plating solution, which generally contains copper sulfate, chlorine, and one or more of a plurality of organic plating chemical components (levelers, suppressors, accelerators, etc.) configured to control plating parameters, an electrical bias is applied between a seed layer on the substrate and theanode 205 positioned in the plating cell. The electrical bias is generally configured to cause metal ions moving through the plating solution to deposit on the cathodic substrate surface. In this embodiment of the platingcell 200, separate fluid solutions are supplied to the volume above themembrane 208 and the volume below themembrane 208. Generally, the volume above the membrane is designated the cathode compartment or region, as this region is where the cathode electrode or plating electrode is positioned. Similarly, the volume below themembrane 208 is generally designated the anode compartment or region, as this is the region where the anode is located. The respective anode and cathode regions are generally fluidly isolated from each other via membrane 208 (which is generally an ionic membrane). Thus, the fluid supplied to the cathode compartment is generally a plating solution containing all the required constituents to support plating operations, while the fluid supplied to the anode compartment is generally a solution that does not contain the plating solution chemical components that are present in the cathode chamber, e.g., copper sulfate solutions, for example. Additional detail with respect to the configuration and operation of the exemplary plating cell illustrated inFIG. 2B may be found in commonly assigned U.S. patent application Ser. No. 10/268,284, entitled “Electrochemical Processing Cell”, filed on Oct. 9, 2002. -
FIG. 3 is a schematic diagram of one embodiment of the platingsolution delivery system 111. The platingsolution delivery system 111 is generally configured to supply a plating solution to each processing location onsystem 100 that requires the solution. More particularly, the plating solution delivery system is further configured to supply a different plating solution or chemistry to each of the processing locations. For example, the delivery system may provide a first plating solution or chemistry toprocessing locations processing locations - In another embodiment of the invention, a first plating solution and a separate and different second plating solution can be provided sequentially to a single plating cell. Typically, providing two separate chemistries to a single plating cell requires the plating cell to be drained and/or purged between the respective chemistries; however, a mixed ratio of less than about 10 percent first plating solution to the second plating solution should not be detrimental to film properties.
- More particularly, the plating
solution delivery system 111 typically includes a plurality ofchemical component sources 302 and at least oneelectrolyte source 304 that are fluidly coupled to each of the processing cells ofsystem 100 via avalve manifold 332. Typically, thechemical component sources 302 include anaccelerator source 306, aleveler source 308, and asuppressor source 310. Theaccelerator source 306 is adapted to provide an accelerator material that typically adsorbs on the surface of the substrate and locally accelerates the electrical current at a given voltage where they adsorb. Examples of accelerators include sulfide-based molecules. Theleveler source 308 is adapted to provide a leveler material that operates to facilitate planar plating. Examples of levelers are nitrogen containing long chain polymers. Thesuppressor source 310 is adapted to provide suppressor materials that tend to reduce electrical current at the sites where they adsorb (typically the upper edges/corners of high aspect ratio features). Therefore, suppressors slow the plating process at those locations, thereby reducing premature closure of the feature before the feature is completely filled and minimizing detrimental void formation. Examples of suppressors include polymers of polyethylene glycol, mixtures of ethylene oxides and propylene oxides, or copolymers of ethylene oxides and propylene oxides. - In order to prevent situations where a chemical component source runs out and to minimize chemical component waste during containers replacement, each of the
chemical component sources 302 generally includes a bulk or larger storage container coupled to asmaller buffer container 316. Thebuffer container 316 is generally filled from thecontainers containers buffer container 316 is typically much less than the volume of thecontainers containers - In the embodiment depicted in
FIGS. 3, 4A , and 4B, the fluid delivery system includes avolume measurement module 312 coupled between the plurality ofchemical component sources 302 and the plurality of processing cells (not shown). Thevolume measurement module 312 generally includes at least avessel 610, anultrasonic sensor 620 disposed in a position to monitor the level or volume in thevessel 610, acontroller 630 coupled to theultrasonic sensor 620, aliquid inlet port 315, aliquid outlet port 340, apurge port 317, agas inlet 640, and avent 313. Thevolume measurement module 312 may be adapted to receive liquids from one or more sources and adapted for providing volumes of individual liquids and mixtures of liquids. - The
vessel 610 may comprise any container adapted for repeated fluid flow therethrough and may be of any shape or configuration. Typically, thevessel 610 includes a cylindrical volumetric shape having multiple fluid inlets and outlets. Thevessel 610 may be of any material inert to the fluids being flowed therethrough including stainless steel, glass, and plastic. All components of thevolume measurement module 312 may comprise plastic. If redundant sensors are used, such as optical sensors, thevessel 610 preferably comprises a transparent material to the optical measurement device or an independent visual scale of volume disposed on the vessel surface, such as graduated volume markings. The volume may vary on the amount of chemical components to be charged to an electrolyte solution, and may comprise between about 1 milliliters and about 1000 milliliters in volume, such as between about 4 ml and about 120 ml. An example of thevessel 610 is a charge tube having a 1.375 inch outer diameter with a 7.5 inch height, with 4 or 5 inlets and outlets. - The
ultrasonic sensor 620 may be a fixed level sensor disposed along a vertical axis of the circumference or side of thevessel 610. The ultrasonic sensor may also be a variable level sensor and disposed vertically displaced from a central axis of thevessel 610 to read the surface level of any liquid disposed in thevessel 610. For example, the ultrasonic sensor may be disposed on the top of thevessel 610 as shown inFIGS. 4A and 4B . An example of a variable level ultrasonic sensor includes the FM-600 and FM-900 series of ultrasonic sensors commercially available from Hyde Park Electronics of Dayton, Ohio, having a 10-0V analog output and an 18 mm outer diameter. In operation, the variable level ultrasonic sensor emits an ultrasonic signal, reads any reflecting or returning signal, or echo, of the emitted ultrasonic signal, to determine a level in the container, converts the level reading to a voltage, and sends an analog voltage signal to acontroller 630. Alternatively, the signal may be a serial communications signal (i.e., RS-232, RS-485, etc.), or a well-known industrial protocol bus signal, such as the General Purpose Interface Bus (GPIB). The sensor may be used to measure the amount of liquid in thevessel 610 during filling thevessel 610, after an amount of liquid has been metered in thevessel 610, or during the discharge of the liquid to the desired process or cell. Alternatively, a pressure sensor positioned or coupled fluidically to the bottom of thevessel 610 to sense the liquid column pressure head of thevessel 610 may be used to measure the volume in thevessel 610. An example of a pressure sensor is amodel 209, part 2091001EG1M2805, pressure sensor from Setra Systems, Inc., of Boxborough, Md. - A temperature measurement device (not shown), such as a thermistor, may also be disposed on or adjacent the
vessel 610 for measuring the temperature inside thevessel 610. The temperature measurement device may be positioned to measure the non-liquid filled volume of thevessel 610, such as at top of thevessel 610 near thevent 313. The temperature measurement device may be integrated into theultrasonic sensor 620 or disposed in an external spaced relationship from theultrasonic sensor 620. The temperature measurement device may be adapted to provide data tosensor 620 or thecontroller 630 to compensate for changes in the velocity of sound with temperature and provide a more accurate measurement of the level and volume of any chemical components or liquids in thevessel 610. When the temperature measurement signal is routed to theultrasonic sensor 620 prior to thecontroller 630, the ultrasonic signal can be compensated for temperature variances represented by the temperature measurement signal to form a temperature-corrected output signal from thesensor 620 to thecontroller 630. One example of a thermistor comprises an epoxy thermistor with a protruding heads having two leads connected to the thermistor and the two leads seated in a polymeric sheath, such as a Peek Tubing, and sealed from exposure by an epoxy, such as Masterbond EP21AR Epoxy. - A
controller 630 may be coupled to thesensor 620, or any other sensors including the temperature measurement device, to receive signals therefrom. Thecontroller 630 may be any suitable controller capable of receiving signals from thesensor 620 and calculating a volume for effectively determining the fluctuating state of liquid volume in thevessel 610 for one or more steps. Thecontroller 630 may be an independent controller or integrated in part of whole in any controller used to monitor and control the processing apparatus. For some embodiments, the controller may be a programmable logic controller (PLC) or a rack-mounted personal computer (PC). In one example, thecontroller 630 may comprise a central processing unit (CPU), memory, and interface circuitry. The CPU may be one of any form of computer processor that can be used in an industrial setting. The memory may be one or more of readily available computer-readable medium, such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any other form of digital storage, local or remote. - A first
liquid inlet port 315 is coupled to a chemicalcomponent dosing pump 311 disposed between thevolume measurement module 312 and thechemical component sources component dosing pump 311 provides the chemical components to thevessel 610 via thepump line 319 and may also be adapted to provide additional liquids, such aselectrolyte 304, deionized water, 342, and/or apurge gas 344. The chemicalcomponent dosing pump 311 may be a rotary metering pump, a solenoid metering pump, a diaphragm pump, a syringe, a peristaltic pump, a piston pump, or other positive displacement volumetric device. The chemicalcomponent dosing pump 311 may used in conjunction with thevolume measurement device 312 and/or the controller described herein as well as used singularly or coupled to a flow sensor. For example, in one embodiment, the chemicalcomponent dosing pump 311 includes a rotating and reciprocating ceramic piston that drives 0.32 ml per cycle of a predetermined chemical component. Alternatively, thedosing pump 311 may be replaced by pressurized fluid delivery process or a vacuum delivery system, which draws chemical components into themodule 312 by a vacuum source atport 313 or another port. Theelectrolyte source 304 may also be fluidly coupled to thevessel 610 by thedosing pump 311. - A
first outlet port 330 of thevolume measurement module 312 is generally coupled to the processing cells via valve orvalve manifold 332 by anoutput line 340. Chemical components (i.e., at least one or more accelerators, levelers and/or suppressors) may be mixed or delivered for combining with an electrolyte flowing through afirst delivery line 350 from theelectrolyte source 304, to form the first br second plating solutions as desired. Thepurge port 317 is generally coupled to thevessel 610 by the valve ormanifold 335electrolyte source 304. Thepurge port 317 may be used to purgevessel 610 when necessary to recover from chemical component delivery errors that are detected by thevolume measurement module 312. - A first
gas inlet line 640 may be used to couple a purge/processing gas source 660 to thevessel 610. The purge/processing gas generally comprises a pressurized inert gas to purge gas disposed in portions of thevessel 610 not containing a liquid. The pressurized inert gas may be adapted to provide inert gases of variable pressures based on the use of the inert gases. The purge/processing gas may also be used to assist in evacuating the liquid volume from thevessel 610 to the processing cells. Avent line 313 may also be used to allow removal of gases in thevessel 610, such as residual gases, contaminant gases, or “head” gases, for example, during a purge process or during volumetric fill in thevessel 610. The purging of contaminant gases is believed to minimize ultrasonic measurement variations. - While the
volume measurement module 312 is described herein for processing chemical components for electrolyte solutions, the invention contemplates that thevolume measurement module 312 may be used for processing additional liquids used in plating operations, including electrolytes, cleaning agents, such as water, etchants as described herein, or dissolving agents as described herein, among others. - In operation, the
volume measurement module 312 receives, measures, and discharges chemical components to an electrolyte for use in a plating process. A purge gas fromsource 660 is introduced into thevessel 610 to remove gases therefrom byvent 313. Thesensor 620 then measures the level of any fluids located in thevessel 610. Chemical components are then introduced from thesources buffer container 316 to thedosing pump 311 and through thedosing pump line 319 into thevessel 610. Thesensor 620 measures the level of the liquid in thevessel 610 either continuously, periodically, or as a level sensor until a specified volume is measured. Thevent 313 is closed, thefirst outlet port 330 is opened and a pressurized gas from theinert gas source 660 or electrolyte fromsource 304 is introduced into thevessel 610 to discharge liquids therefrom. Thesensor 620 may also measure the discharging liquid volume. - While not shown, the invention also contemplates additional components using in fluid systems, including bypass valves, purge valves, flow controllers, and/or temperature controllers.
- In another embodiment of the invention the fluid delivery system may be configured to provide a second completely different plating solution and associated chemical components. As such, while not shown, multiple
volume measurement modules 312 may be disposed in the system to connect to one or more of the plating cells to provide the necessary plating solutions. For example, in this embodiment a different base electrolyte solution (similar to the solution contained in container 304) may be implemented to provide theprocessing system 100 with the ability, for example, to use plating solutions from two separate manufacturers. Further, an additional set of chemical component containers may also be implemented to correspond with the second base plating solution. Therefore, this embodiment of the invention allows for a first chemistry (a chemistry provided by a first manufacturer) to be provided to one or more plating cells ofsystem 100, while a second chemistry (a chemistry provided by a second manufacturer) is provided to one or more plating cells ofsystem 100. Each of the respective chemistries will generally have their own associated chemical components, however, cross dosing of the chemistries from a single chemical component source or sources is not beyond the scope of the invention. - In order to implement the fluid delivery system capable of providing two separate chemistries from separate base electrolytes, a duplicate of the fluid delivery system illustrated in
FIG. 3 is connected to the processing system. More particularly, the fluid delivery system illustrated inFIG. 3 is generally modified to include a second set ofchemical component containers 302 and separate sources for virgin makeup solution/base electrolyte 304 are also provided. The additional hardware is set up in the same configuration as the hardware illustrated inFIG. 3 , however, the second fluid delivery system is generally in parallel with the illustrated or first fluid delivery system. Thus, with this configuration implemented, either base chemistry with any combination of the available chemical components may be provided to any one or more of the processing cells ofsystem 100. - The
valve manifold 332 is typically configured to interface with a bank ofvalves 334. Each valve of thevalve bank 334 may be selectively opened or closed to direct fluid from thevalve manifold 332 to one of the process cells of theplating system 100. Thevalve manifold 332 andvalve bank 334 may optionally be-configured to support selective fluid delivery to additional number of process cells. In the embodiment depicted inFIG. 3 , thevalve manifold 332 andvalve bank 334 include asample port 336 that allows different combinations of chemistries or component thereof utilized in thesystem 100 to be sampled without interrupting processing. - In some embodiments, it may be desirable to purge the
volume measurement module 312,output line 340 and/orvalve manifold 332. To facilitate such purging, the platingsolution delivery system 111 is configured to supply at least one of a cleaning and/or purging fluid. In the embodiment depicted inFIG. 3 , the platingsolution delivery system 111 includes adeionized water source 342 and anon-reactive gas source 344 coupled to thefirst delivery line 350. Thenon-reactive gas source 344 may supply a non-reactive gas, such as an inert gas, air or nitrogen through the first andsecond delivery lines valve manifold 332. Deionized water may be provided from thedeionized water source 342 to flush out thevalve manifold 332 in addition to, or in place of non-reactive gas. Electrolyte from theelectrolyte sources 304 may also be utilized as a purge medium. - In an alternative embodiment of the system, a
second delivery line 352 is tied between the firstgas delivery line 350 and thedosing pump 311. A purge fluid of a purge liquid includes at least one of an electrolyte, deionized water or other suitable liquid from the respective sources, such as 304 and 342, may be diverted from thefirst delivery line 350 through the secondgas delivery line 352, and through thedosing pump 311 to thevolume measurement module 312. A purge fluid of a purge gas, such as nitrogen gas, from therespective sources 344 may be diverted from thefirst delivery line 350 through the secondgas delivery line 352 and purgegas line 351 to thevolume measurement module 312. The purge fluid is driven through thevolume measurement module 312 and out theoutput line 340 to thevalve manifold 332. Thevalve bank 334 typically directs the purge fluid out a drain port 338 to thereclaimation system 232. The various other valves, regulators and other flow control devices have not been described and/or shown for the sake of brevity. - In one embodiment of the invention, chemical components for a first chemistry may be provided to promote feature filling of copper on a semiconductor substrate. The first chemistry may include between about 30 and about 65 g/l of copper, between about 35 and about 85 ppm of chlorine, between about 20 and about 40 g/l of acid, between about 4 and about 7.5 ml/L of accelerator, between about 1 and 5 ml/L of suppressor, and no leveler. The chemical components for the first chemistry is delivered from the
valve manifold 332 to afirst plating cell 150 to enable features disposed on the substrate to be substantially filled with metal. As the first chemistry generally does not completely fill the feature and has an inherently slow deposition rate, the first chemistry may be optimized to enhance the gap fill performance and the defect ratio of the deposited layer. - A second chemistry makeup with a different chemistry from the first chemistry may be provided to another plating cell on
system 100 viavalve manifold 332, wherein the second chemistry is configured to promote planar bulk deposition of copper on a substrate. The second chemistry may include between about 35 and about 60 g/l of copper, between about 60 and about 80 ppm of chlorine, between about 20 and about 40 g/l of acid, between about 4 and about 7.5 ml/L of accelerator, between about 1 and about 4 ml/L of suppressor, and between about 6 and about 10 ml/L of leveler, for example. The chemical components for the second chemistry is delivered from thevalve manifold 332 to the second process cell to enable an efficient bulk metal deposition process to be performed over the metal deposited during the feature fill and planarization deposition step to fill the remaining portion of the feature. Since the second chemistry generally fills the upper portion of the features, the second chemistry may be optimized to enhance the planarization of the deposited material without substantially impacting substrate throughput. Thus, the two step, different chemistry deposition process allows for both rapid deposition and good planarity of deposited films to be realized. The two chemistries may be provided sequentially from the samevolume measurement module 312. - When utilized with a process cell requiring anolyte solutions such as the
process cell 200 ofFIG. 2B , the platingsolution delivery system 111 generally includes ananolyte fluid circuit 380 that is coupled to theinlet 209 of the platingcell 200. Theanolyte fluid circuit 380 may include a plurality ofchemical component sources 382 coupled by adosing pump 384 to a manifold 386 that directs chemical components (typically not utilized) selectively metering from one or more of thesources 382 and combined with an anolyte in the manifold 386 to those process cells (such as the cell 200) requiring anolyte solution during the plating process. The anolyte may be provided by ananolyte source 388 and a volume measurement module may be used to provide the selectively metering chemical components. -
FIG. 5 depicts one embodiment of aprocess cell 400 configured to remove deposited material from an edge of asubstrate 402. Theprocess cell 400 includes ahousing 404 having asubstrate chuck 406 disposed therein. Thesubstrate chuck 406 includes a plurality of arms, shown as 408A-C, extending from acentral hub 410. Eacharm 408A-C includes asubstrate clamp 412 disposed at a distal end of the arm. Thehub 410 is coupled by ashaft 414 to amotor 416 disposed outside of thehousing 404. Themotor 416 is adapted to rotate thechuck 406 andsubstrate 402 disposed thereon during processing. During processing, thesubstrate 402 is rotated while an etchant is delivered from anetchant source 418 to the substrate's edge. The etchant is typically delivered to the substrate's edge through a plurality ofupper nozzles 420 positioned within thehousing 404 in an orientation that directs the etchant flowing therefrom in a radially outward direction against the substrate's surface. Theprocess cell 400 may also include a plurality oflower nozzles 422 coupled to theetchant source 418 and adapted to direct etchant to the substrate's edge on the side of the substrate opposite theupper nozzle 420. The etchant is typically delivered to thesubstrate 402 while the substrate rotates between about 100 to about 1,000 rpm. Thenozzles - After the deposited material has been removed from the substrate's edge, deionized water or other cleaning agent is provided through the
nozzles substrate 402 is typically rotated at approximately 200 rpm to remove etchant, deionized water and other impurities from the respective upper and lower surfaces of thesubstrate 402. The various fluids dispended during processing are drained from thehousing 404 through aport 425 formed in the bottom of thehousing 404. Two process cells configured to remove deposited material from the edge of the substrate which may be adapted to benefit from the invention are described in U.S. patent application Ser. No. 09/350,212, filed Jul. 9, 1999, and U.S. patent application Ser. No. 09/614,406, filed Jul. 12, 2000, both of which are hereby incorporated by reference in their entireties. -
FIG. 6 is a partial sectional view of aprocess cell 500 configured to spin, rinse and dry asubstrate 502 after processing. Theprocess cell 500 includes ahousing 504 having asubstrate chuck 506 disposed therein. Thesubstrate chuck 506 includes a plurality of arms, shown as 508A-C, extending from acentral hub 510. Eacharm 508A-C includes asubstrate clamp 512 disposed at a distal end of the arm. Thehub 512 is coupled by ashaft 514 to amotor 516 disposed outside of thehousing 504. Themotor 516 is adapted to rotate thechuck 506 andsubstrate 502 disposed thereon during processing. During processing, the substrate is rotated while a cleaning agent, such as deionized water or alcohol, is delivered from afluid source 518 to the upper side of thesubstrate 502 from a plurality ofupper nozzles 520 positioned within thehousing 504 above thechuck 506. The backside of thesubstrate 502 is treated with at least one of a cleaning agent or a dissolving agent dispensed from a plurality oflower nozzles 522 disposed below thechuck 506 and coupled to thefluid source 518. Examples of dissolving agents include hydrochloric acid, sulfuric acid, phosphoric acid, hydrofluoric acid among others. The fluids are typically delivered to the substrate while the substrate rotates between about 4 to about 4,000 rpm. - After the deposited material has been removed from the substrate's edge, deionized water or other cleaning agent is provided through the
nozzles substrate 502 is typically rotated at approximately 100 to about 5000 rpm to dry the substrate while removing liquids and other impurities from the respective upper and lower surfaces of thesubstrate 502. The various fluids dispended during processing are drained from thehousing 504 through aport 524 formed in the bottom of thehousing 504. One process cell configured to clean and dry the substrate which may be adapted to benefit from the invention is described in U.S. Pat. No. 6,290,865, issued Sep. 18, 2001, which is hereby incorporated by reference in its entirety. - In operation, embodiments of the invention generally provide a plating system having multiple plating cells on a single integrated platform, wherein a fluid delivery system for the plating system is capable of providing multiple chemistries to the plating cells. More particularly, for example, assuming that four individual plating cells are positioned on a common system platform, then the fluid delivery system of the invention is capable of providing a different chemistry to each of the four plating cells. The different chemistries may include different base solutions or virgin makeup solutions, and further, may include various chemical components at various amounts, including absence of selected chemical components.
- Multiple chemistry capability for a single platform has advantages in several areas of semiconductor processing. For example, the ability to provide multiple chemistries to multiple plating cells on a unitary platform allows for a single plating system take advantage of positive characteristics of multiple chemistries in a single platform on a single substrate. Multiple chemistry capability has application, for example, to feature fill and bulk fill process, as a first plating solution or chemistry may be tailored to a feature full process (low defect, but slow deposition rate process), while a second solution may be tailored to a feature bulk fill process (a more rapid deposition process that may be implemented once the feature is primarily filled by the first process). Additionally, a multiple chemistry plating system would facilitate plating directly on barrier layers, as a first plating chemistry could be used to facilitate adhesion of a first material to the barrier layer, and then a second chemistry could be used plate a second material over the first material layer on top of the barrier layer and fill the features without encountering barrier layer plating adhesion challenges. Further, a multiple chemistry system would also be beneficial to an alloy plating process, wherein a first chemistry could be used to plate the alloy layer and then a second chemistry could be used to plate a different layer or another alloy layer over the previously deposited layer. Further still, a multiple chemistry process could be used to substantially improve defect ratios in semiconductor substrate plating processes via utilization of a first chemistry configured to plate a first layer with minimal defects, and then a second chemistry configured to plate a second layer over the first layer with minimal defects in manner that optimizes throughput.
- Exemplary Method of the Volume Measurement Module
-
FIG. 7 is a flow diagram illustration one embodiment of anexemplary method 700 for monitoring and controlling the volume of a liquid in thevolume measurement module 312 to the process cells described herein. The method may be monitored and controlled bycontroller 630 as described herein as well as by any other controller use on thesystem 100. - The process begins by confirming that chemical components are primed to be delivered to the
vessel 610 of thevolume measurement module 312 atstep 710. The confirmation may be achieved, for example, by a proximity, flow, level, or pressure sensor disposed in thechemical component sources buffer container 316, in the line between thedosing pump 311 and thechemical component sources buffer container 316, or a sensor disposed in or adjacent thedosing pump 311. - A volume of initial fluid is introduced into the
vessel 610 atstep 720. The electrolyte, for example, catholyte, or deionized water, may be introduced into thevessel 610, such as less than about 10 ml, for example, between about 1 and about 2 ml, atstep 720. A purge gas of an inert gas, such as nitrogen, is introduced into thevessel 610 to remove any gas, such as head gas, disposed in thevessel 610 and discharged from thevessel 610 through thevent 313 atstep 730. - The
ultrasonic sensor 620 measures the initial volume of any liquid in the volume atstep 740. For example, anultrasonic sensor 620 emits an ultrasonic signal into thevessel 610. The ultrasonic signal then contacts the volume of liquid and a reflection signal is generated. The ultrasonic sensor has a receiver to sense reflective signal and based upon a determination of signal intensity and/or duration between emission and reception of the signal, produce an electronic signal, such as a voltage measurement, representative of liquid level in thevessel 610. The electronic signal is typically the average of several hundred reading taken over approximately a time span, for example, between about 1 to 2 second time span. The multiple readings are believed to average out random errors. Theultrasonic sensor 620 may be programmed to average multiple reading for example, averaging between 2 and about 1000 readings. Thecontroller 630 may also be programmed to average signals received from theultrasonic sensor 620. - The electronic signal is then sent to the
controller 630 as an analog signal, which is then converted by the controller into a volume measurement by use of a prior calibration, a pre-selected value, or database of pre-calculated to pre-measured volumes. Circuitry on the ultrasonic sensor or controller may comprise any combination of analog to digital (A/D) converters, digital signal processing (DSP) circuits and communication circuits to convert the signals to a format suitable by the CPU of the controller. The initial fluid introduced instep 720 may be used to provide sufficient signal feedback to establish an initial level measurement. - Alternatively, if a temperature measuring device, such as a thermistor, is used with the ultrasonic sensor, the thermistor measures the temperature of the non-liquid filled portion of the
vessel 610 to compensate or correct for the changes in the velocity of sound with temperature prior to calculating the liquid level in thevessel 610. - One or more chemical components, either concurrently or sequentially, are introduced into the
vessel 610 atstep 750. The introduced chemical components level in thevessel 610 is then measured atstep 760. The chemical components levels may be measured as described instep 740. - The volume of the chemical components as determined by the
controller 630 is compared with a pre-determined or pre-selected value atstep 770. If the calculated volume does not achieve the desired pre-determined or pre-selected value, chemical components are continued to be supplied to thevessel 610. The chemical components may be provided periodically or continuously to thevessel 610. Volume calculations may be made periodically or continuously during filling of thevessel 610. The comparison of values may be used to determine whether the delivery accuracy from thepump 311 is correct, and if not, the components in thevessel 610, may be discharge to a drain vialine 317. The predetermined value may be the estimated volume provided by an upstream metering pump, such aspump 311, or other delivery mechanism. The predetermined value may also be stored electronically in a database for comparison or thecontroller 630 might be able to directly compare values from a sensor on thepump 311 to the volume measured in thevessel 610. - The process may be repeated for each chemical component introduced into the
vessel 610, so that a final discharge volume may comprise one or more chemical components that have been pre-mixed before discharge to the appropriate line, process cell, or storage unit. For example, thedosing pump 311 may provide a metered amount of liquid to thevessel 610, a level measurement may be taken for each metered amount or after a series of metered amount to verify the amount of liquid provided. - The process may be performed statically or dynamically. In a static process, the
vessel 610 is filled with a first quantity of fluid and a measurement is taken of the volume prior to the addition of any additional liquids. This can be used to verify the volume metered out by thedosing pump 311. In a static process, steps 750-770 are performed separately. In a dynamic process, the vessel is continuously filled with a liquid and the level is continuously of periodically measured until a desired level is reached. In the dynamic process, step 750-770 are performed concurrently. - If the calculated volume achieves the desired pre-determined or pre-selected value, the contents in the
vessel 610 may be discharged atstep 780. The discharge of the contents may be provided by closing thevent 313 of thevessel 610 remaining open during filling of thevessel 610, opening an outlet, and pressurizing the liquid from thevessel 610. The liquid may be discharged by supplying pressurized purge gas, such as nitrogen, by the use of deionized water, or by an amount of electrolyte, such as catholyte, provided to thevessel 610. - Optionally, after discharge of the liquids from the
vessel 610, thevessel 610 may be rinsed by electrolyte, such as the catholyte, or deionized water atstep 790 prior to initiation of the next sequence. - While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
REFERENCE NUMERALS ECP System 100 Process Location 102 Process Location 104 Process Location 106 Process Location 108 Process Location 110 Delivery System 111 Process Location 112 Processing Base 113 Process Location 114 Process Location 116 Robot 120 Robot Arms 122 Robot Arms 124 Substrate 126 Factory Interface (F1) 130 F1 Robot 132 Substrate Cassettes 134 Anneal Chamber 135 Cooling Plate Position 136 Heating Plate Position 137 Processing Cell 150 Base 160 Plating Cell 200 Outer Basin 201 Inner Basin 202 Frame Portion 203 Base Member 204 Anode Member 205 Support Assembly 206 Slots 207 Membrane 208 Fluid Inlet/Drains 209 Diffusion Plate 210 Head Assembly 211 Electrolyte Inlet 216 Drain 218 Anode Assembly 220 Diffusion Plate 222 Insulative Spacer 224 System 232 Hanger Plate 236 Hanger Pins 238 Basins 240 Anodes 244 Power Source 246 Channel 248 Holder Assembly 250 Assembly Frame 252 Mounting Post 254 Cantilever Arm 256 Assembly Actuator 258 Mounting Plate 260 Assembly Shaft 262 Thrust Plate 264 Contact Ring 266 Arm Actuator 268 Inner Basin 272 Component Sources 302 Electrolyte Source 304 Accelerator Source 306 Leveler Source 308 Suppressor Source 310 Volume Measurement Module 312 Vent 313 Liquid Inlet Port 315 Buffer Container 316 Purge Port 317 Pump Line 319 First Outlet Port 330 Valve Manifold 332 Valve Bank 334 Port 336 Drain Port 338 Output Line 340 Water Source 342 Gas Source 344 Delivery Lines 350, 352 Circuit 380 Sources 382 Dosing Pump 384 Anolyte Source 388 Process Cell 400 Substrate 402 Housing 404 Substrate Chuck 406 Arms 408A-C Central Hub 410 Clamp 412 Shaft 414 Motor 416 Etchant Source 418 Nozzles 420, 422 Port 425 Process Cell 500 Substrate 502 Housing 504 Chuck 506 Arms 508A-C Central Hub 510 Clamp or Hub 512 Shaft 514 Motor 516 Fluid Source 518 Upper Nozzles 520 Lower Nozzles 522 Port 524 Vessel 610 Vent 613 Sensor 620 Controller 630 Gas Inlet Line 640 Gas Source 660 Priming Additive for Delivery to a Vessel 710 Introducing a Volume of Initial Liquid to the 720 Vessel Purging the Vessel of any Resident Gases 730 Measuring the Initial Level/Volume of Any 740 Liquid Disposed in the Vessel by an Ulatrasonic Sensor Introducing One or More Additives into the 750 Vessel Measuring the Level/Volume of Additives 760 Disposed in the Vessel by an Ulatrasonic Sensor Comparing the Level/Volume of the Initial 770 Additives Level/Volume to a Pre-Selected Value to Determine Process Volume Discharging the Additives from the Vessel 780 Optionally, Cleaning the Vessel 790
Claims (35)
1. A method for supplying a fluid to a substrate processing apparatus, the method comprising:
measuring a first level in the vessel with a first ultrasonic signal to provide a first volume measurement;
delivering at least one chemical component to the vessel;
measuring a second level in the vessel with a second ultrasonic signal to provide a second volume measurement;
determining the difference in volume between the first volume measurement and the second volume measurement;
comparing the difference in volume with a pre-determined value; and
discharging chemical components from the vessel to the substrate processing apparatus.
2. The method of claim 1 , further comprising delivering a catholyte to the vessel prior to measuring the volume in the vessel with the first ultrasonic signal.
3. The method of claim 2 , further comprising purging gas from the vessel prior to measuring the volume in the vessel with the first ultrasonic signal.
4. The method of claim 1 , wherein the discharging chemical components from the vessel to the substrate processing apparatus comprises closing a vent, opening a discharge valve, and pressure discharging the chemical components by a material selected from the group of an inert gas, water, or an electrolyte composition.
5. The method of claim 1 , wherein the substrate processing apparatus comprises a plating cell, an unitary plating system platform, or a spin-rinse processing cell.
6. The method of claim 1 , wherein the measuring the level in the vessel with the first ultrasonic signal further comprises measuring the temperature in the vessel.
7. The method of claim 1 , further comprising continuously delivering the at least one chemical component to the vessel and measuring the level in the vessel until the pre-determined value is achieved.
8. A method for electroplating at least one layer onto a surface of a substrate surface, the method comprising:
positioning the substrate in a plating cell on a unitary system platform for a plating technique;
supplying an electrolyte composition to the plating cell by supplying an electrolyte and an amount of one or more chemical components, wherein the amount of one or more chemical components are provided by:
measuring the first level of a vessel with a first ultrasonic signal to provide a first volume measurement;
delivering at least one chemical component to the vessel;
measuring a second level in the vessel with a second ultrasonic signal to provide a second volume measurement;
determining the difference in volume between the first volume measurement and the second volume measurement;
comparing the difference in volume with a pre-determined value; and
discharging chemical components from the vessel to the plating cell; and
depositing a conductive material from the electrolyte composition to the surface of the substrate.
9. The method of claim 8 , further comprising delivering a catholyte to the vessel prior to measuring the volume in the vessel with the first ultrasonic signal.
10. The method of claim 8 , further comprising purging gas from the vessel prior to measuring the volume in the vessel with the first ultrasonic signal.
11. The method of claim 8 , wherein the discharging chemical components from the vessel to the substrate processing apparatus comprises closing a vent, opening a discharge valve, and pressure discharging the chemical components by a material selected from the group of an inert gas, water, or an electrolyte composition.
12. The method of claim 8 , wherein the substrate processing apparatus comprises a plating cell, an unitary plating system platform, or a spin-rinse processing cell.
13. The method of claim 8 , further comprising rinsing the substrate.
14. The method of claim 13 , further comprising spin drying the substrate.
15. The method of claim 8 , wherein the measuring the level in the vessel with the first ultrasonic signal further comprises measuring the temperature in the vessel.
16. The method of claim 8 , further comprising continuously delivering the at least one chemical component to the vessel and measuring the level in the vessel until the pre-determined value is achieved.
17. An electrochemical processing system, comprising:
a system platform having one or more processing cells positioned thereon;
at least one robot positioned to transfer substrates between the one or more processing cells; and
a fluid delivery system in fluid communication with each of the one or more processing cells, the fluid delivery system comprising:
one or more chemical component sources;
a metering pump in fluid communication with each of the chemical component sources;
an electrolyte source in fluid communication with the metering pump; and
a vessel in fluid communication with the metering pump at an input and with the one or more processing cells at an output, the vessel comprising a charging cell, an ultrasonic sensor, and a controller.
18. The apparatus of claim 17 , wherein the one or more chemical component sources further comprise:
a first source for providing an electrochemical plating accelerator;
a second source for providing an electrochemical plating leveler; and
a third source for providing an electrochemical plating suppressor.
19. The apparatus of claim 18 , wherein the one or more chemical component sources further comprises:
at least one bulk chemical component container; and
at least one buffer container having a volume less than the bulk chemical component container and being in fluid communication with an associated bulk chemical component container and the metering pump.
20. The apparatus of claim 17 , wherein at least two of the one or more processing cells comprise electrochemical plating cells.
21. The apparatus of claim 17 , wherein at least one of the one or more processing cells comprise a spin rinse dry processing cell.
22. The apparatus of claim 17 , wherein at least one of the one or more processing cells comprise a substrate bevel edge clean processing cell.
23. The apparatus of claim 17 , further comprising at least one annealing chamber in communication with the system platform.
24. The apparatus of claim 23 , wherein the anneal chamber includes at least one heating position and at least one cooling position.
25. The apparatus of claim 24 , wherein the annealing chamber further comprises a substrate transfer robot positioned between the at least one heating position and the at least one cooling position, the substrate transfer robot is configured to transfer substrates between the heating and cooling positions.
26. The apparatus of claim 17 , wherein the fluid delivery system is further configured to supply an anolyte to an anode chamber of at least one plating cell positioned on the system platform.
27. The apparatus of claim 17 , wherein the measuring the level in the vessel with the ultrasonic signal further comprises measuring the temperature in the vessel.
28. An electrochemical processing system, comprising:
a processing system base having one or more process cell locations thereon;
at least two electrochemical plating cells positioned at two of the process cell locations;
at least one spin rinse dry cell positioned at one of the process cell locations;
at least one substrate bevel clean cell positioned at another one of the process cell locations; and
a fluid delivery system in fluid communication with each of the one or more processing cells, the fluid delivery system comprising:
one or more chemical component sources;
a metering pump in fluid communication with each of the chemical component sources;
a first virgin electrolyte source in fluid communication with the metering pump; and
a vessel in fluid communication with the metering pump at an input and with the one or more processing cells at an output, the vessel comprising a charging cell, an ultrasonic sensor, and a controller.
29. The electrochemical processing system of claim 28 , further comprising a factory interface in communication with the processing system base.
30. The electrochemical processing system of claim 28 , further comprising at least one annealing chamber in communication with at least one of the factory interface and the processing base.
31. The electrochemical processing system of claim 30 , wherein the at least one annealing chamber comprises a heating location, a cooling location, and a robot positioned to transfer substrates between the heating location and the cooling location.
32. The electrochemical processing system of claim 28 , wherein the one or more plating solution chemical component containers comprise a containers in fluid communication with a buffer container, the buffer container being in fluid communication with the metering pump.
33. The electrochemical processing system of claim 28 , wherein the metering pump comprises a precise fluid delivery pump having one or more inputs and at least one output, the metering pump being configured to mix a predetermined ratio of fluid components received at the one or more inputs and output the predetermined ratio of fluid components from the at least one output.
34. The electrochemical processing system of claim 28 , wherein the multiple chemistry plating solution delivery system further comprises a second virgin electrolyte solution container in fluid communication with the metering pump, the second virgin electrolyte solution-container being configured to provide a second virgin electrolyte.
35. The electrochemical processing system of claim 28 , wherein the vessel further comprises a temperature measuring apparatus.
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PCT/US2004/033483 WO2005035836A1 (en) | 2003-10-10 | 2004-10-08 | Volume measurement apparatus and method |
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WO (1) | WO2005035836A1 (en) |
Cited By (12)
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US20070058147A1 (en) * | 2005-09-14 | 2007-03-15 | Tetsuya Hamada | Apparatus for and method of processing substrate subjected to exposure process |
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US20100200403A1 (en) * | 2009-02-09 | 2010-08-12 | Applied Materials, Inc. | Metrology methods and apparatus for nanomaterial characterization of energy storage electrode structures |
US20140195067A1 (en) * | 2013-01-10 | 2014-07-10 | General Electric Company | Method and system for use in controlling a pressure vessel |
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US7473339B2 (en) * | 2003-04-18 | 2009-01-06 | Applied Materials, Inc. | Slim cell platform plumbing |
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US20190096688A1 (en) * | 2013-09-27 | 2019-03-28 | Screen Holdings Co, Ltd. | Substrate processing apparatus and substrate processing method |
US10720333B2 (en) * | 2013-09-27 | 2020-07-21 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus and substrate processing method |
US11342190B2 (en) | 2013-09-27 | 2022-05-24 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus and substrate processing method |
Also Published As
Publication number | Publication date |
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WO2005035836A1 (en) | 2005-04-21 |
WO2005035836B1 (en) | 2005-05-12 |
EP1682700A1 (en) | 2006-07-26 |
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