US20050051516A1 - Mask and method of manufacturing the same, electro-luminescence device and method of manufacturing the same, and electronic instrument - Google Patents
Mask and method of manufacturing the same, electro-luminescence device and method of manufacturing the same, and electronic instrument Download PDFInfo
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- US20050051516A1 US20050051516A1 US10/939,381 US93938104A US2005051516A1 US 20050051516 A1 US20050051516 A1 US 20050051516A1 US 93938104 A US93938104 A US 93938104A US 2005051516 A1 US2005051516 A1 US 2005051516A1
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- mask
- monocrystal substrate
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 238000005401 electroluminescence Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 106
- 230000000149 penetrating effect Effects 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 230000005291 magnetic effect Effects 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 abstract description 58
- 238000010586 diagram Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 6
- 230000000994 depressogenic effect Effects 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 polyparaphenylene vinylene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/12—Production of screen printing forms or similar printing forms, e.g. stencils
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A mask has a monocrystal substrate having opposite surfaces which are planes having Miller indices {110}. A plurality of penetrating holes are formed in the monocrystal substrate. An opening shape of each of the penetrating holes is a polygon and each side of the polygon is parallel with a plane in a group of the {111} planes. The wall surfaces of the penetrating holes are the {111} planes. In the method of manufacturing a mask, openings are formed in the etching resistant film corresponding to the shape of the penetrating holes and the monocrystal substrate is etched.
Description
- Japanese Patent Application No. 2001-287019, filed on Sep. 20, 2001, is hereby incorporated by reference in its entirety.
- The present invention relates to a mask and its manufacturing method, an electro-luminescence device and its manufacturing method, and an electronic instrument.
- A mask with high precision is required. For example, a method of manufacturing a color organic electro-luminescence (hereinafter called EL) device that is known uses a mask to deposit an organic material of each color. Though a method in which a base is etched is known as one of the methods of manufacturing a mask, it was difficult to manufacture a mask with high precision in the conventional method.
- According to a first aspect of the present invention, there is provided a method of manufacturing a mask comprising:
-
- forming an etching resistant film having a plurality of openings having a polygonal shape on surfaces of a monocrystal substrate having Miller indices {110}, each side of the openings being parallel to one of the {111} planes; and
- forming a plurality of penetrating holes in the monocrystal substrate within the openings by etching;
- wherein the etching has a crystal orientation dependence that the etching speed with respect to the {111} planes is slower than the etching speed with respect to the {100} and {110} planes.
- According to a second aspect of the present invention, there is provided a mask comprising:
-
- a monocrystal substrate having opposite surfaces having Miller indices {110}; and
- a plurality of penetrating holes formed in the monocrystal substrate,
- wherein the openings have a polygonal shape, each side of the openings being parallel to a plane in a group of the {111} planes; and
- wherein inside walls of the penetrating holes are the {111} planes.
- According to a third aspect of the present invention, there is provided a method of manufacturing an electro-luminescence device comprising forming a film of a light emitting material using the above-described mask.
- An electro-luminescence device according to a fourth aspect of the present invention is manufactured by the above method.
- An electro-luminescence device according to a fifth aspect of the present invention comprises a plurality of light emitting layers each having an upper surface formed in a polygonal shape except a rectangle, and the angle of each corner of the polygonal shape is substantially equal to the intersection angle between two planes among the planes having Miller indices {111}.
- An electronic instrument according to a sixth aspect of the present invention has the electro-luminescence device.
-
FIGS. 1A to 1C are diagrams illustrating a mask in accordance with one embodiment of the present invention. -
FIG. 2A is a plan view of a penetrating hole;FIG. 2B is a perspective view of the penetrating hole; andFIG. 2C is a diagram illustrating a crystal plane by using Miller indices. -
FIGS. 3A to 3F are diagrams illustrating a method of manufacturing a mask in accordance with one embodiment of the present invention. -
FIGS. 4A to 4C are diagrams illustrating a method of manufacturing a mask in accordance with a second embodiment of the present invention. -
FIG. 5 is a diagram illustrating a method of manufacturing a mask in accordance with a third embodiment of the present invention. -
FIG. 6 is a diagram illustrating a method of manufacturing a mask and an EL device in accordance with a fourth embodiment of the present invention. -
FIGS. 7A to 7C are diagrams illustrating a method of forming a film of a light emitting material. -
FIGS. 8A and 8B are diagrams illustrating an EL device manufactured by utilizing the method of forming a film of a light emitting material according to the present invention. -
FIG. 9 shows an electronic instrument in accordance with one embodiment of the present invention. -
FIG. 10 shows an electronic instrument in accordance with one embodiment of the present invention. - Embodiments of the present invention may provide a mask with high precision and its manufacturing method, an EL device and its manufacturing method, and an electronic instrument.
- (1) A method of manufacturing a mask according to one embodiment of the present invention comprises:
-
- forming an etching resistant film having a plurality of openings having a polygonal shape on surfaces of a monocrystal substrate having Miller indices {110}, each side of the openings being parallel to one of the {111} planes; and
- forming a plurality of penetrating holes in the monocrystal substrate within the openings by etching;
- wherein the etching has a crystal orientation dependence that the etching speed with respect to the {111} planes is slower than the etching speed with respect to the {100} and {110} planes.
- In accordance with this embodiment, each side of the openings formed in the etching resistant film is parallel to one of the {111} planes. Then, the etching having a crystal orientation dependence is performed inside the openings, in a direction perpendicular to the {110} planes of the monocrystal substrate. Thus, since the penetrating holes perpendicular to the top surface of the monocrystal substrate can be formed, the mask with high precision can be manufactured.
- (2) In this method of manufacturing a mask,
-
- opposite surfaces of the monocrystal substrate may be the {110} planes;
- the etching resistant film having the openings may be formed on the opposite surfaces; and
- the etching may be advanced in the opposite surfaces of the monocrystal substrate, depressed portions formed by the etching being made into penetrating holes.
- (3) In this method of manufacturing a mask,
-
- the openings may include first openings formed on one surface of the monocrystal substrate and second openings formed on the other surface of the monocrystal substrate, the first and second openings being correspondingly disposed to each other.
- (4) In this method of manufacturing a mask,
-
- the second openings may be smaller than the first openings, and formed inside a projecting area of the first openings.
- Thus, the positioning of the first and second openings can be done more easily.
- (5) In this method of manufacturing a mask,
-
- the shape of each of the openings may be a parallelogram.
- (6) In this method of manufacturing a mask,
-
- the thickness W of the monocrystal substrate and the length L of a long side of the parallelogram may have the relationship: {square root}3×W<L.
- (7) In this method of manufacturing a mask,
-
- the penetrating holes may be formed by forming small penetrating holes in the monocrystal substrate by an energy beam, and then enlarging the small penetrating holes by the etching.
- Thus, the penetrating hole can be formed even in a thick monocrystal substrate.
- (8) In this method of manufacturing a mask,
-
- mirror polishing may be carried out for the {110} plane of the monocrystal substrate.
- (9) In this method of manufacturing a mask,
-
- the monocrystal substrate may be a monocrystal silicon substrate.
- (10) In this method of manufacturing a mask,
-
- the etching resistant film may be formed of silicon oxide or silicon nitride.
- (11) In this method of manufacturing a mask,
-
- an organic amine-based alkali aqueous solution and an inorganic alkali aqueous solution may be used as an etchant.
- (12) This method of manufacturing a mask may further comprise forming a magnetic film on the monocrystal substrate after the penetrating holes are formed.
- Thus, the mask able to be adsorbed by magnetic force can be manufactured.
- (13) This method of manufacturing a mask may further comprise forming a thin portion in a region in which the penetrating holes are formed, within the monocrystal substrate.
- Thus, the length of the penetrating hole in its axial direction can be shorter than the size of opening (e.g. width) of the penetrating hole. Further, strength can be held if the portion except the region in which the penetrating hole is formed is the thick wall in the monocrystal substrate.
- (14) In this method of manufacturing a mask,
-
- the thin portion may be formed avoiding an edge portion of the monocrystal substrate.
- Thus, the edge portion of the monocrystal substrate is part of the thick wall so that strength can be held.
- (15) In this method of manufacturing a mask,
-
- the etching resistant film may be formed to have a first portion which is in a region except a region in which the thin portion is formed, and a second portion which is thinner than the first portion and is disposed in a region in which the thin portion is formed, the openings being formed in the second portion; and
- the etching may be carried out to remove the second portion first, an exposed portion in the first portion being then etched to form the thin portion.
- Thus, the thin portion and the penetrating hole can be formed by forming the etching resistant film only once.
- (16) In this method of manufacturing a mask,
-
- the thin portion may be formed after the penetrating holes are formed.
- (17) In this method of manufacturing a mask,
-
- the thin portion may be formed by etching with no crystal orientation dependence.
- This configuration makes it possible to form the thin portion into a desired shape irrespective of the crystal orientation.
- (18) In this method of manufacturing a mask,
-
- a plurality of the thin portions may be formed in the monocrystal substrate, and each of the thin portions may be formed in a region including a group of the penetrating holes.
- (19) A mask according to one embodiment of the present invention comprises:
-
- a monocrystal substrate having opposite surfaces having Miller indices {110}; and
- a plurality of penetrating holes formed in the monocrystal substrate,
- wherein the openings have a polygonal shape, each side of the openings being parallel to a plane in a group of the {111} planes; and
- wherein inside walls of the penetrating holes are the {111} planes.
- In accordance with this embodiment of the present invention, a mask pattern can be formed with high precision since the penetrating holes are formed perpendicularly to the opposite surfaces of the monocrystal substrate.
- (20) In this mask,
-
- the shape of each of the openings may be a parallelogram.
- (21) In this mask,
-
- the thickness W of the monocrystal substrate and the length L of a long side of the parallelogram may have the relationship: {square root}3×W<L.
- (22) In this mask,
-
- the monocrystal substrate may be a monocrystal silicon substrate.
- (23) This mask may further comprise a magnetic film formed on the monocrystal substrate.
- Thus, the mask can be adsorbed by magnetic force.
- (24) In this mask,
-
- a thin portion may be formed in a region in which the penetrating holes are formed, within the monocrystal substrate.
- In accordance with this configuration, the length of the penetrating hole in its axial direction can be shorter than the size of opening (e.g. width) of the penetrating hole. Further, strength can be held if the portion except the region in which the penetrating holes are formed is the thick wall in the monocrystal substrate.
- (25) In this mask,
-
- the thin portion may be formed avoiding an edge portion of the monocrystal substrate.
- Thus, the edge portion of the monocrystal substrate is part of the thick wall so that strength can be held.
- (26) In this mask,
-
- a plurality of the thin portions may be formed in the monocrystal substrate; and
- each of the thin portions may be formed in a region including a group of the penetrating holes.
- (27) A method of manufacturing an electro-luminescence device according to one embodiment of the present invention comprises forming a film of a light emitting material using the above-described mask.
- (28) An electro-luminescence device according to one embodiment of the present invention is manufactured by the above-described method.
- (29) An electro-luminescence device according to one embodiment of the present invention comprises a plurality of light emitting layers each having an upper surface formed in a polygonal shape except a rectangle,
-
- wherein the angle of each corner of the polygonal shape is substantially equal to the intersection angle between two planes among the planes having Miller indices {111}.
- (30) In this EL device,
-
- the polygonal shape may be a parallelogram.
- (31) An electronic instrument according to one embodiment of the present invention has the EL device.
- The preferred embodiments of the present invention will next be explained with reference to the drawings.
- First Embodiment
-
FIGS. 1A to 1C are diagrams illustrating a mask in accordance with one embodiment of the present invention.FIG. 1B is a sectional view taken along an IB-IB line ofFIG. 1A .FIG. 1C is a partially enlarged view ofFIG. 1B . The mask has a monocrystal substrate 10 (or is formed by only the monocrystal substrate 10). For example, themonocrystal substrate 10 is a monocrystal silicon substrate, or may be a silicon wafer. Themonocrystal substrate 10 has surfaces having Miller indices {110}. For example, the top and bottom surfaces of themonocrystal substrate 10 are {110} planes. The {110} planes includes a plurality of planes equivalent to a (110) plane. In a cubic lattice, directions perpendicular to the {110} planes are <110> directions. - The
monocrystal substrate 10 includes at least one (e.g., plural)thin portion 12. A plurality of thethin portions 12 may be provided in a matrix. Themonocrystal substrate 10 except thethin portion 12 is athick portion 16. Strength of themonocrystal substrate 10 is held by thethick portion 16. Thethin portion 12 is formed avoiding an edge portion of themonocrystal substrate 10. Namely, the edge portion of themonocrystal substrate 10 is part of thethick portion 16. Since thethin portion 12 is surrounded by thethick portion 16, nothin portion 12 is easily deformed. - The
thin portion 12 is located in a position biased on one surface in the thickness direction of themonocrystal substrate 10. Namely, thethin portion 12 is the bottom portion of adepressed portion 14 formed on one surface (one of the opposite surfaces) of themonocrystal substrate 10. In this case, thethin portion 12 and the other portion (or thick portion 16) in themonocrystal substrate 10 are located in the same level on a surface opposite to the surface on which thedepressed portion 14 is formed. As a modified example, the depressed portion may be also formed in corresponding positions on opposite surfaces (top and bottom surfaces) of themonocrystal substrate 10. In this case, the thin portion is located in the center in the thickness direction of themonocrystal substrate 10. - As shown in
FIG. 1C , plural penetratingholes 18 are formed in themonocrystal substrate 10. A region in which the penetratingholes 18 are formed is made into thethin portion 12. A group of the penetratingholes 18 is formed in onethin portion 12. -
FIG. 2A is a plan view of a penetrating hole, andFIG. 2B is a perspective view of the penetrating hole. As mentioned above, the surfaces of themonocrystal substrate 10 are the {110} planes. A shape of the penetratinghole 18 is a polygon except a rectangle. A shape of the penetratinghole 18 shown inFIG. 2A is a parallelogram, and the length L of its long side and the thickness W1. (seeFIG. 1C ) of the monocrystal substrate 10 (or thethick portion 16 specifically) have the relationship: {square root}3×W1<L. As a modified example, the length L of the long side of the parallelogram and the thickness W2 (seeFIG. 1C ) of thethin portion 12 of themonocrystal substrate 10 may have the relationship: {square root}3×W2<L. - Each side of the opening of the penetrating
hole 18 is parallel to one of the {111} planes (specifically shown inFIGS. 2A and 2B ). In a cubic lattice, directions perpendicular to the {111} planes are <111> directions. -
FIG. 2C is a diagram illustrating a crystal plane by using Miller indices. As can be seen fromFIG. 2C , the {110} planes perpendicularly intersect the {111} planes. The wall surface of the penetratinghole 18 is one of the {111} planes (an example is shown inFIGS. 2A and 2B ). Accordingly, the penetratinghole 18 is disposed perpendicularly to the top and bottom surfaces of the monocrystal substrate 10 (the {110} planes). Since the penetratinghole 18 is formed perpendicularly to the top and bottom surfaces of themonocrystal substrate 10, a mask pattern is formed with high precision. -
FIGS. 3A to 3F are diagrams illustrating a method of manufacturing a mask in accordance with one embodiment of the present invention. In this embodiment, themonocrystal substrate 10 is prepared in a state prior to the formation of the penetratinghole 18, etc. For example, themonocrystal substrate 10 is a monocrystal silicon substrate, and may be also a silicon wafer. Themonocrystal substrate 10 has surfaces having Miller indices {110}. For example, the top and bottom surfaces (opposite surfaces) of themonocrystal substrate 10 are the {110} planes. Mirror polishing may be carried out for at least the top surface (or opposite surfaces) of themonocrystal substrate 10. - As shown in
FIG. 3A , an etching resistant film 20 (e.g., a thickness of about 1 μm) is formed in themonocrystal substrate 10. The etchingresistant film 20 is formed on each of the top and bottom surfaces (opposite surfaces) of themonocrystal substrate 10. The etchingresistant film 20 may be arranged so as to continuously cover the entire surface of themonocrystal substrate 10. The etchingresistant film 20 may be formed by silicon oxide and silicon nitride using thermal oxidation processing. - As shown in
FIG. 3B , a plurality ofopenings 22 are formed in the etchingresistant film 20. A pair ofopenings 22 is oppositely provided on the top and bottom surfaces (opposite surfaces) of themonocrystal substrate 10. Each of theopenings 22 is formed so as to have the same shape as the penetratinghole 18 in a position in which the penetratinghole 18 is formed. Theopening 22 is formed in a polygonal shape (e.g., a parallelogram). Each side of theopening 22 is located in parallel with one of the {111} planes. The other details about the shape of theopening 22 are the same as the penetratinghole 18. Photolithography can be applied to the formation of theopening 22. - As shown in
FIG. 3C , the etchingresistant film 20 is patterned so as to have afirst portion 24 avoiding an area for forming thethin portion 12, and asecond portion 26 arranged in the area for forming thethin portion 12 and thinner than thefirst area 24. The photolithography may be also applied to this patterning. When the patterning is terminated, theopening 22 is located in thesecond portion 26. The outer shapes (planar shapes) of the first andsecond portions thick portion 16 and thethin portion 12. - The
monocrystal substrate 10 is then etched with the etchingresistant film 20 having the first andsecond portions openings 22 on the opposite surfaces of themonocrystal substrate 10, the etching is advanced on the opposite sides. - As shown in
FIG. 3D , the penetratinghole 18 is formed within theopening 22 of the etchingresistant film 20. The thickness W1 (seeFIG. 1C ) of themonocrystal substrate 10 and the length L of a long side of the parallelogram of the opening 22 (the same as the length L of a long side of the parallelogram of the penetratinghole 18 shown inFIG. 2A ) have the relationship: {square root}3×W1<L. Accordingly, the depressed portion formed by the etching can be penetrated without intermediately stopping the etching from the opposite sides. - As shown in
FIG. 3E , thesecond portion 26 is early removed in comparison with thefirst portion 24 by reducing the thickness of the etchingresistant film 20. This process may be also performed by the etching. Thus, themonocrystal substrate 10 forming the penetratinghole 18 therein is covered with thefirst portion 24 among the etchingresistant film 20. The surface of themonocrystal substrate 10 exposed by removing thesecond portion 26 is a forming area of thethin portion 12. - As shown in
FIG. 3F , thethin portion 12 can be formed by etching the exposed surface from thefirst portion 24 in themonocrystal substrate 10. If etching having no crystal orientation dependence is applied as this etching, thethin portion 12 having a desired shape can be formed. In this embodiment, after the penetratinghole 18 is formed, thethin portion 12 is formed. Since the details of thethin portion 12 have been described above, its explanation is omitted here. The mask shown inFIGS. 1A to 1C can be manufactured by removing the etching resistant film 20 (first portion 24 in detail). - In accordance with this embodiment, each side of the
opening 22 formed in the etchingresistant film 20 is parallel to one of the {111} planes. Then, the etching having a crystal orientation dependence is performed inside theopening 22, in a direction perpendicular to the {110} planes of themonocrystal substrate 10. Thus, since the penetratinghole 18 perpendicular to the top surface of themonocrystal substrate 10 can be formed, the mask with high precision can be manufactured. - In this embodiment, the
thin portion 12 is formed, but the present invention includes an example in which nothin portion 12 is formed. When nothin portion 12 is formed, the forming process of thesecond portion 26 shown inFIG. 3C and the processes afterFIG. 3E are not required. - Second Embodiment
-
FIGS. 4A to 4C are diagrams illustrating a method of manufacturing a mask in accordance with a second embodiment of the present invention. In the first embodiment, theopenings 22 are formed in the etchingresistant film 20 on opposite surfaces of themonocrystal substrate 10. In this case, since it is difficult to align the positions of theopenings 22 on opposite sides, a method for simply aligning these positions will next be mainly explained. - As shown in
FIG. 4A , afirst opening 34 is formed in an etchingresistant film 30 formed on one surface of themonocrystal substrate 10, and asecond opening 36 is formed in an etchingresistant film 32 formed on the other surface. Here, the widths A, B of the first andsecond openings second opening 36 inside a projecting area of thefirst opening 34. Its positioning is simpler than the alignment of the openings of the same size. Thus, thefirst opening 34 on one side and thesecond opening 36 on the other side are correspondingly formed in the above etchingresistant films monocrystal substrate 10. The etching is advanced as shown inFIG. 4B , and a penetratinghole 38 is formed as shown inFIG. 4C . As shown inFIG. 4C , part of the etchingresistant film 32 defining thesecond opening 36 of a smaller size is projected inside the penetratinghole 38, but the etchingresistant film 32 may be removed. The contents explained in this embodiment can be applied to the first embodiment. - Third Embodiment
-
FIG. 5 is a diagram illustrating a method of manufacturing a mask in accordance with a third embodiment of the present invention. In the first embodiment, the thickness W1 (seeFIG. 1C ) of the monocrystal substrate and the length L of a long side of the parallelogram of theopening 22 of the etching resistant film 20 (the same as the length L of a long side of the parallelogram of the penetratinghole 18 shown inFIG. 2A ) have the relationship: {square root}3×W1<L. The penetrating hole can be formed in such a comparatively thin monocrystal substrate. However, in a monocrystal substrate thicker than this comparatively thin monocrystal substrate, the etching is intermediately stopped so that no penetrating hole can be formed. - In this embodiment, the forming method of the penetrating hole will be explained when the relationship: {square root}3×W1≧L is formed (when the monocrystal substrate is thick).
- As shown in
FIG. 5 , a small penetrating hole (a hole smaller than the penetrating hole) 42 is formed in advance before the etching in a forming area of the penetrating hole in the monocrystal substrate 10 (an exposed surface from a patterned etching resistant film 40). The smallpenetrating hole 42 is formed by an energy beam (e.g., YAG laser). Thus, since a corner portion is formed in an opening portion of the small penetratinghole 42, the penetrating hole can be formed without stopping the advancement of the etching. The contents explained in this embodiment can be applied to the first embodiment. - Fourth Embodiment
-
FIG. 6 is a diagram illustrating a method of manufacturing a mask and an EL device in accordance with a fourth embodiment of the present invention. Amagnetic film 52 is formed in themask 10 shown inFIG. 6 . Themagnetic film 52 can be formed by a ferromagnetic material such as iron, cobalt, and nickel. Otherwise, themagnetic film 52 may be also formed by a magnetic metal material such as Ni, Co, Fe, and a stainless steel alloy including an Fe component, and bonding of the magnetic metal material and a nonmagnetic metal material. The other details of themask 10 have been explained in the first embodiment. - In this embodiment, the film of a light emitting material is formed in a
substrate 54 by using themask 10. Thesubstrate 54 is arranged for an EL device (e.g., organic EL device) and is a transparent substrate such as a glass substrate. As shown inFIG. 7A , an electrode (e.g., a transparent electrode constructed by ITO, etc.) 56 and a positivehole transport layer 58 are formed in thesubstrate 54. An electronic transport layer may be also formed. Themask 10 is arranged such that thedepressed portion 14 is directed on the side opposed to thesubstrate 54. Namely, a flat surface of themask 10 is directed to thesubstrate 54 side. Amagnet 50 is arranged behind thesubstrate 54 so as to attract themagnetic film 52 formed in themask 10. Thus, even when a warp is caused in themask 10, this warp can be corrected. -
FIGS. 7A to 7C are diagrams illustrating a method of forming a film of a light emitting material. For example, the light emitting material is an organic material, and there is alumiquinolinol complex (Alq3) as the organic material of low molecule, and there is polyparaphenylene vinylene (PPV) as the organic material of high molecule. The film of the light emitting material can be formed by evaporation. For example, as shown inFIG. 7A , while a red light emitting material is patterned through themask 10, the film is formed and a redlight emitting layer 60 is formed. As shown inFIG. 7B , while themask 10 is shifted and a green light emitting material is patterned, the film is formed and a greenlight emitting layer 62 is formed. As shown inFIG. 7C , while themask 10 is again shifted and a blue light emitting material is patterned, the film is formed and a bluelight emitting layer 62 is formed. -
FIGS. 8A and 8B are diagrams illustrating an EL device manufactured by utilizing the above-described method of forming a film of a light emitting material. The EL device (e.g., organic EL device) has asubstrate 54, anelectrode 56, a positivehole transport layer 58,light emitting layers FIG. 8B , the shape of upper surface of each of thelight emitting layers hole 18 of themask 10. The details have been described in the first embodiment. Further, anelectrode 66 is formed on thelight emitting layers electrode 66 is a cathode electrode. The EL device (EL panel) becomes a display device (display). - A notebook
personal computer 1000 is shown inFIG. 9 and aportable telephone 2000 is shown inFIG. 10 as an electronic instrument having an EL device in accordance with one embodiment of the present invention. - Note that this invention is not limited to the embodiments described above and thus it can be implemented in many various ways. For example, the present invention includes various other configurations substantially the same as the configurations described in the embodiments (in function, method and result, or in objective and result, for example). The present invention also includes a configuration in which an unsubstantial portion in the described embodiments is replaced. The present invention also includes a configuration having the same effects as the configurations described in the embodiments, or a configuration able to achieve the same objective. Further, the present invention includes a configuration in which a publicly known technique is added to the configurations in the embodiments.
Claims (14)
1. A mask comprising:
a monocrystal substrate having opposite surfaces having Miller indices {110}; and
a plurality of penetrating holes formed in the monocrystal substrate,
wherein the openings have a polygonal shape, each side of the openings being parallel to a plane in a group of the {111} planes; and
wherein inside walls of the penetrating holes are the {111} planes.
2. The mask as defined in claim 1 ,
wherein the shape of each of the openings is a parallelogram.
3. The mask as defined in claim 2 ,
wherein the thickness W of the monocrystal substrate and the length L of a long side of the parallelogram have the relationship: {square root}3×W<L.
4. The mask as defined in claim 1 ,
wherein the monocrystal substrate is a monocrystal silicon substrate.
5. The mask as defined in claim 1 ,
further comprising a magnetic film formed on the monocrystal substrate.
6. The mask as defined in claim 1 ,
wherein a thin portion is formed in a region in which the penetrating holes are formed, within the monocrystal substrate.
7. The mask as defined in claim 6 ,
wherein the thin portion is formed avoiding an edge portion of the monocrystal substrate.
8. The mask as defined in claim 6 , wherein:
a plurality of the thin portions are formed in the monocrystal substrate; and
each of the thin portions is formed in a region including a group of the penetrating holes.
9. A method of manufacturing an electro-luminescence device comprising:
forming a film of a light emitting material using the mask as defined in claim 1 .
10. An electro-luminescence device manufactured by the method as defined in claim 9 .
11. An electro-luminescence device comprising:
a plurality of light emitting layers each having an upper surface formed in a polygonal shape except a rectangle,
wherein the angle of each corner of the polygonal shape is substantially equal to the intersection angle between two planes among the planes having Miller indices {111}.
12. The electro-luminescence device as defined in claim 11 ,
wherein the polygonal shape is a parallelogram.
13. An electronic instrument having the electro-luminescence device as defined in claim 10 .
14. An electronic instrument having the electro-luminescence device as defined in claim 11.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/939,381 US20050051516A1 (en) | 2001-09-20 | 2004-09-14 | Mask and method of manufacturing the same, electro-luminescence device and method of manufacturing the same, and electronic instrument |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001287019A JP3775493B2 (en) | 2001-09-20 | 2001-09-20 | Mask manufacturing method |
JP2001-287019 | 2001-09-20 | ||
US10/246,731 US6893575B2 (en) | 2001-09-20 | 2002-09-19 | Mask and method of manufacturing the same, electro-luminescence device and method of manufacturing the same, and electronic instrument |
US10/939,381 US20050051516A1 (en) | 2001-09-20 | 2004-09-14 | Mask and method of manufacturing the same, electro-luminescence device and method of manufacturing the same, and electronic instrument |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US10/246,731 Division US6893575B2 (en) | 2001-09-20 | 2002-09-19 | Mask and method of manufacturing the same, electro-luminescence device and method of manufacturing the same, and electronic instrument |
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US20050051516A1 true US20050051516A1 (en) | 2005-03-10 |
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US10/246,731 Expired - Lifetime US6893575B2 (en) | 2001-09-20 | 2002-09-19 | Mask and method of manufacturing the same, electro-luminescence device and method of manufacturing the same, and electronic instrument |
US10/939,381 Abandoned US20050051516A1 (en) | 2001-09-20 | 2004-09-14 | Mask and method of manufacturing the same, electro-luminescence device and method of manufacturing the same, and electronic instrument |
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Application Number | Title | Priority Date | Filing Date |
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US10/246,731 Expired - Lifetime US6893575B2 (en) | 2001-09-20 | 2002-09-19 | Mask and method of manufacturing the same, electro-luminescence device and method of manufacturing the same, and electronic instrument |
Country Status (5)
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US (2) | US6893575B2 (en) |
JP (1) | JP3775493B2 (en) |
KR (1) | KR100501974B1 (en) |
CN (1) | CN1214697C (en) |
TW (1) | TW567393B (en) |
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Also Published As
Publication number | Publication date |
---|---|
JP3775493B2 (en) | 2006-05-17 |
CN1214697C (en) | 2005-08-10 |
TW567393B (en) | 2003-12-21 |
US20030054646A1 (en) | 2003-03-20 |
CN1431851A (en) | 2003-07-23 |
US6893575B2 (en) | 2005-05-17 |
KR100501974B1 (en) | 2005-07-20 |
KR20030025815A (en) | 2003-03-29 |
JP2003100452A (en) | 2003-04-04 |
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