US20050000451A1 - Clamping jig for semiconductor laser bars - Google Patents
Clamping jig for semiconductor laser bars Download PDFInfo
- Publication number
- US20050000451A1 US20050000451A1 US10/843,976 US84397604A US2005000451A1 US 20050000451 A1 US20050000451 A1 US 20050000451A1 US 84397604 A US84397604 A US 84397604A US 2005000451 A1 US2005000451 A1 US 2005000451A1
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- Prior art keywords
- supporting
- bars
- bar
- laser
- face
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000003825 pressing Methods 0.000 claims abstract description 46
- 238000007740 vapor deposition Methods 0.000 claims description 55
- 239000011248 coating agent Substances 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 23
- 238000002310 reflectometry Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000005019 vapor deposition process Methods 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
Abstract
A clamping jig for mounting semiconductor laser bars includes: multiple supporting bars for holding laser bars therebetween; a pair of supporting plates each of which has a mounting face for mounting the supporting bars in a row; a pressing member for pressing the supporting bars for holding the laser bar; pressing cover members for covering both ends of each supporting bar to prevent supporting bars from falling from the supporting plate; and a supporting frame for detachably supporting the supporting plates and pressing cover members. Each supporting bar is formed with a longitudinal length greater than the laser bar, within a predetermined length so as to be mounted within the supporting frame. Both of the pair of supporting plates may be mounted so as to face one another, or just one may be mounted with the pressing cover members being mounted on the supporting frame instead of the other supporting plate.
Description
- 1. Field of the Invention
- The present invention relates to a clamping jig for clamping semiconductor laser bars formed by cleaving a semiconductor wafer into a number of bars, and particularly to a clamping jig used for forming a reflection coating of predetermined reflectivity by vapor deposition or sputtering on a predetermined face of each semiconductor laser bar.
- 2. Description of the Related Art
- In many cases, a semiconductor laser device has a configuration wherein reflection coating is formed with predetermined reflectivity on the optical beam output end face of a laser chip.
- Formation of the aforementioned reflection coating is made as follows. First, a number of
electrodes 101 are formed on asemiconductor wafer 100, following whichcleavages 102 are formed betweenadjacent electrodes 101, as shown inFIG. 7A . - Subsequently, as shown in
FIG. 7B , thesemiconductor wafer 100 is cleaved into a number of bars so as to formmultiple laser bars 100 a (which are each formed in the shape of a bar having multiple electrodes linearly arrayed thereon). - Conventionally, each divided
laser bar 100 a is mounted on a clamping jig, following which the clamping jig mounting thelaser bar 100 a is mounted on a holder in a vapor deposition chamber. The holder for mounting the clamping jig is provided at the upper portion in the chamber and a vapor source is provided at the lower portion in the chamber. - Vapor deposition is performed as follows. First, the chamber is evacuated to a predetermined degree of vacuum. Subsequently, the vapor deposition material loaded into the vapor source is heated by an electron beam or the like so as to evaporate, thereby forming reflection coating on a side face of the
laser bar 100 a (such side face corresponds to an end face of a laser chip). Thus, by the aforementioned vapor deposition, the reflection coating made of a vapor deposited film is formed on a side face of thelaser bar 100 a. - However, with the above-described conventional vapor deposition method, the work for mounting laser bars has been troublesome since each
laser bar 100 a is mounted on a single clamping jig. In particular, in the case where vapor deposited films are to be formed on the faces of both sides of a laser bar, when a vapor deposition process for one side of the laser bar is finished, the laser bar must be removed and reset so as to expose the other side face of the laser bar, which is a troublesome work. - A means has been proposed as disclosed in Japanese Unexamined Patent Application Publication No. 2002-164609, wherein multiple laser bars are mounted on a single clamping jig so as to perform vapor deposition onto both end faces while keeping the laser bars mounted on the clamping jig.
- With the vapor deposition process disclosed in Japanese Unexamined Patent Application Publication No. 2002-164609, the
multiple laser bars 100 a are mounted on a clamping jig A shown inFIG. 8 so as to be piled with the face, on which theelectrodes 101 have been formed, facing the piling direction. The clamping jig A is formed in the shape of a “U” having three closed sides and one open side. A groove B is formed in each of the two closed sides in a manner such that the grooves B face one another so as to allow thelaser bars 100 a to be piled at the bottom portion of the clamping jig A with both longitudinal ends of the laser bars fitted into the grooves. Themultiple laser bars 100 a are piled up on the bottom face of the clamping jig A. - Thus, the
laser bars 100 a are mounted on the clamping jig A in a manner such that both sides of the laser bars are exposed, except for both longitudinal ends thereof. The clamping jig A mounting themultiple laser bars 100 a are mounted in the chamber of the vapor deposition apparatus, following which vapor deposition is performed. - With the vapor deposition apparatus disclosed in Japanese Unexamined Patent Application Publication No. 2002-164609, the
multiple laser bars 100 a are mounted on the clamping jig A and their vapor deposition can be performed at the same time. Furthermore, with the aforementioned clamping jig A, thelaser bars 100 a are mounted with both side faces being exposed, and accordingly, vapor deposition can be performed for both side faces simply by adjusting the direction in which the clamping jig faces the vapor source. - However, the
multiple laser bars 100 a mounted on the clamping jig A are subjected to vapor deposition process with both end portions thereof fit within the grooves B of the clamping jig A. Accordingly, both ends of thelaser bar 100 a are not coated with vapor deposited films, i.e., no reflection coating is formed on either ends, creating a problem in which both ends are useless for forming any semiconductor laser product. - Furthermore, the two grooves B are formed with a fixed depth thereof and a fixed length therebetween, creating a problem that the
laser bar 100 a formed with a length out of a predetermined range cannot be mounted onto the clamping jig A. Accordingly, a particular clamping jig A for vapor deposition needs to be made corresponding to the length of thelaser bars 100, which is impractical for general application. Furthermore, alaser bar 100 a which has been broken into a short length in the cleaving process cannot be mounted on such a clamping jig A. - If any of the
laser bars 100 a is broken and falls down from the clamping jig A after being mounted thereon, a gap is created in a pile of thelaser bars 100 a, which results in a problem that any of thelaser bar 100 a may incline, causing irregularity in the film thickness of the reflection coating on the side face of each laser bar. - With the clamping jig A, the
laser bars 100 a are mounted so as to fit the grooves B. Accordingly, in the event that a portion near the end of thelaser bar 100 is damaged due to contact with the corner of the groove B, the damaged portion is useless for forming any semiconductor laser product. - The aforementioned clamping jig A is formed in the shape of a “U” having a single open side and three closed sides as shown in
FIG. 8 , creating a problem in which the clamping jig A is readily deformed due to heat. Deformation of the clamping jig A creates a problem of deformation of the laser bars mounted thereon. - It is an object of the present invention to provide a clamping jig for mounting semiconductor laser bars so as to form reflection coating on a side face of each laser bar, including both end portions thereof, by performing vapor deposition process for a great number of laser bars at the same time without causing damage or deformation thereto. (Note that a side face of each laser bar corresponds to an end face of laser chips processed from the laser bar.)
- A clamping jig according to the present invention can be used for mounting semiconductor laser bars so as to form reflection coating with predetermined reflectivity by vapor disposition or sputtering on a predetermined face of each semiconductor laser bar, which has been formed by cleaving a semiconductor wafer into a number of bars.
- A clamping jig according to one embodiment of the present invention comprises: multiple supporting bars for holding the laser bars therebetween; a pair of supporting plates each of which has a mounting face for mounting the supporting bars in a row; a pressing member for pressing the supporting faces of the supporting bars for holding the laser bars; pressing-cover members for covering both end portions of each supporting bar so as to prevent each supporting bar from falling down from the supporting plate; and a supporting frame for detachably supporting the supporting plates and pressing-cover members.
- In the clamping jig according to the present invention, each supporting bar includes a pair of front and back longitudinal supporting faces for supporting the laser bars. The supporting bar has a predetermined longitudinal length greater than the laser bar and suitable for mounting to the supporting frame.
- The clamping jig is structured such that a pair of supporting plates can be mounted on the supporting frame with their mounting faces facing one another at a predetermined interval, or instead of the pair of supporting plates, one supporting plate and one pressing-cover member can be mounted on the supporting frame. The mounting face of the supporting plate may be designed to be inserted within the supporting frame.
- A clamping jig according to one embodiment of the present invention is configured such that the aforementioned pair of supporting plates can be fixed to the rectangular supporting frame with the mounting faces of the supporting plates facing one another, sandwiching the rectangular supporting frame therewith, or being inserted into the opening within the supporting frame.
- Furthermore, in the state wherein the aforementioned pair of supporting plates is fixed onto the supporting frame, the mounting plates thereof face one another at a greater interval than the width of the face of each laser bar on which electrodes have been formed. Specifically, the aforementioned pair of supporting plates is fixed to the supporting frame such that each laser bar generally is in contact with both the supporting plates when the laser bars and the supporting bars are disposed between the aforementioned pair of mounting faces. As described above, the pair of supporting plates is fixed onto the supporting frame with such a gap, thereby mounting the laser bars and the supporting bars between the pair of supporting plates.
- Alternatively, the clamping jig according to the present invention may have a configuration wherein only one of the aforementioned supporting plates is fixed onto the supporting frame, and the laser bars and the supporting bars are alternately mounted on the mounting face of the supporting plate fixed on the supporting frame, following which the pressing cover members are fixed to the supporting frame so as to cover both ends of each supporting bar.
- The supporting bars are mounted to the supporting plate such that the supporting faces for supporting the laser bars face one another.
- Furthermore, with the multiple supporting bars, each supporting face is pressed into contact with the face of the corresponding laser bar on which the electrodes have been formed, whereby a pair of supporting bars holds a laser bar. Note that each laser bar is disposed between the supporting bars at the middle portion along the longitudinal direction of the supporting bar.
- Following the laser bars being mounted such that each laser bar is held by the adjacent supporting bars, the supporting faces of the supporting bars are caused to be pressed by the pressing member such as a spring screw or a clamp plate. The clamping jig according to the present invention is structured such that the pressing member presses the supporting bars so as to increase the contact pressure on the face between the adjacent supporting bar and laser bar so that each laser bar is held by the adjacent supporting bars in a secure manner.
- Furthermore, according to one aspect of the present invention, the pressing cover members are fixed to the supporting frame mounting the laser bars and the supporting bars on the mounting face thereof so as to cover both ends of each supporting bar, thereby preventing the supporting bars from falling down from the mounting face of the supporting plate.
- Furthermore, the pressing cover member may be formed of a bar-shaped plate member or a rod-shaped member so as to cover one end of each of the semiconductor laser bars at the same time.
- A clamping jig according to one embodiment of the present invention can be used for vapor deposition process for one side face of each laser bar in a manner wherein a single supporting plate is fixed to the supporting frame, and the supporting bars and the laser bars are mounted on the mounting face of the supporting plate, following which the supporting bars are pressed by the pressing member, and the pressing cover members are fixed to the supporting frame. The clamping jig with the aforementioned configuration is mounted onto the rotary dome of the vapor deposition apparatus so as to perform vapor deposition process of the laser bars.
- In the event that the other side face of each laser bar is subjected to vapor deposition process, operations are performed as follows. That is, following the first vapor deposition, the clamping jig is separated from the rotary dome and the pressing cover members are separated from the clamping jig with the pressing cover members facing upward. Subsequently, another supporting plate is fixed to the supporting frame so as to cover the laser bars. Thus, the laser bars and the supporting bars are mounted within a space surrounded by the two supporting plates and the supporting frame.
- Subsequently, the supporting frame is turned over such that the supporting plate fixed in this preparation for the second vapor deposition faces downward, and the supporting plate previously fixed for the first vapor deposition is removed from the supporting frame. Subsequently, the pressing cover members are fixed to the supporting frame so as to cover both ends of each supporting bar. Note that when the pressing cover members are fixed to the supporting frame, each laser bar is mounted with the other side face that has not been subjected to vapor deposition being exposed. The clamping jig with the aforementioned configuration is mounted onto the rotary dome so as to perform vapor deposition process for the other side faces of the laser bars.
- The clamping jig according to the present invention as described above allows reflection coating to be formed over the side including longitudinal end portions of each laser bar in a secure manner without damage or deformation of the laser bars by performing vapor deposition of a considerable number of laser bars all at once.
- Furthermore, preparation for performing vapor deposition to both sides of each laser bar can be done easily by replacing the pressing cover members and a supporting plate onto the supporting frame without separating the laser bars from the supporting frame. This facilitates mounting and removing the laser bars 100 a to and from the clamping jig by the user.
- Furthermore, with the clamping jig according to the present invention in which each supporting bar is formed with the aforementioned longitudinal length, when both ends of each supporting bar are covered with the pressing cover member, the end portions of each laser bar are not covered, since each laser bar is disposed between the adjacent supporting bars so as to be located at the middle portion along the longitudinal direction of the supporting bar.
- Thus, each laser bar is mounted between the supporting bars such that the entirety of its face that is to be coated with a vapor deposition film is exposed, and accordingly reflection coating can be formed over the entire face to be coated with a vapor deposition film. Such face is hereinafter referred to as a “deposition-face”.
- Furthermore, even multiple laser bars with different lengths can be mounted onto a single clamping jig, thereby enabling vapor deposition of a considerable number of laser bars at the same time. In particular, even in the event that any laser bars have been unintentionally formed with an excessively short length, vapor deposition process can be performed on such laser bars together with other laser bars having a normal length. As described above, vapor deposition process can be performed on multiple laser bars regardless of the length thereof, which is practical for wider range of application by the clamping jig.
- Furthermore, the supporting bars for holding the laser bars are each formed in the shape of a bar, and accordingly each supporting bar undergoes minimal deformation due to heat during vapor deposition, which results in less deformation of the laser bars.
- Note that vapor deposition must be performed on the side face of each laser bar such that the vapor reaches the edge of the face of the laser bar on which the electrodes have been formed. The face of a laser bar on which the electrodes have been formed is hereinafter referred to as a “electrode-formed face”. Otherwise, parts of the edge of the side face of each laser bar may not be coated with the vapor deposition film. Accordingly, in order to form reflection coating with excellent uniformity in a secure manner, vapor deposition must be performed such that the vapor surrounds the edge of the electrode-formed face.
- Accordingly, the supporting face of each supporting bar may have a smaller width than the laser bar's width (i.e., the width of the electrode-formed face).
- Thus, each supporting bar is formed with the aforementioned width, and accordingly, each laser bar can be mounted such that the side face (i.e., deposition-face) thereof protrudes from the side faces of the adjacent supporting bars. Accordingly, vapor deposition can be done on the side face (deposition-face) of each laser bar such that the vapor reaches the portion (the portion protruding from the adjacent supporting bars) of the electrode-formed face of each laser bar.
- According to the present invention, a film of vapor deposition material can be formed with excellent uniformity over the whole of each laser bar's deposition-face by allowing the vapor to reach the edge of the electrode-formed face of each laser bar, as described above. Furthermore, the amount of the vapor which surrounds the edge of each laser bar can be controlled to a desired value simply by adjusting the width of the supporting face of each supporting bar.
- Furthermore, according to one embodiment of the present invention, the supporting face of each supporting bar may be formed with a coefficient of friction μa equal to or greater than 0.9 μb and equal to or smaller than 1.1 μb, wherein μb represents the coefficient of friction of the surface of the semiconductor laser bar. That is, the supporting face of each supporting bar is preferably formed with a coefficient of friction μa substantially the same as the coefficient of friction μb of the surface of each semiconductor laser bar.
- By designing the supporting face of each supporting bar to have generally the same coefficient of friction as that of the surface of each laser bar, each laser bar can be held by the adjacent supporting bars in a secure manner without falling out from between the adjacent supporting bars. Each supporting bar may be formed of Si so as to exhibit a coefficient of friction in such a range.
- Furthermore, the clamping jig according to the present invention includes the pressing member for pressing the supporting bars, and thereby the contact face pressure between the adjacent supporting bar and the laser bar can be increased so that each laser bar is held by the adjacent supporting bars in a secure manner.
- Furthermore, even in the event that any part of the supporting bars falls down from the supporting frame, the resultant gap can be immediately filled with the adjacent supporting bar by means of the pressing member so that the other lasers bars can be held by the supporting bars without being slanted. Thus, even in the event that any supporting bar falls down from the clamping jig, reflection coating having precise film thickness can be formed on the deposition-faces of the other laser bars.
- Furthermore, according to one embodiment of the present invention, the pressing cover members may be designed to cover only both ends of each supporting bar so that the supporting bars are prevented from falling down from the supporting base, while exposing the entire face of laser bar's deposition-face.
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FIG. 1 is a plan view of a clamping jig for semiconductor laser bars according to the present invention, wherein one side of each laser bar is exposed; -
FIG. 2 is a cross-sectional view of the clamping jig taken along line I-I inFIG. 1 ; -
FIG. 3 is a plan view of a clamping jig for semiconductor laser bars according to the present invention, wherein each laser bar is mounted between a pair of supporting plates; -
FIG. 4 is a cross-sectional view of the clamping jig taken along line II-II inFIG. 3 ; -
FIG. 5 is an entire configuration diagram which shows vacuum vapor deposition apparatus to which clamping jigs according to the present invention can be mounted; -
FIG. 6 is a partial cross-sectional view which shows a clamping jig mounted on a rotary dome of the vacuum vapor deposition apparatus; -
FIGS. 7A and 7B are explanatory diagrams for describing the process of cleaving a semiconductor wafer into a number of bars, whereinFIG. 7A shows the semiconductor wafer before being cleaved, andFIG. 7B shows the laser bars formed by cleaving the semiconductor wafer; and -
FIG. 8 is a perspective view which shows a conventional clamping jig. - A description is made below regarding the embodiments according to the present invention. Note that the same components are denoted by the same reference characters, and redundant descriptions will be omitted. Note that the dimensions are not necessarily to scale in the drawings, regardless of the description in this specification.
-
FIG. 1 is a plan view of a clamping jig for semiconductor laser bars according to the present invention, wherein each laser bar is mounted with one face being exposed.FIG. 2 is a cross-sectional view of the clamping jig taken along line I-I inFIG. 1 .FIG. 3 is a plan view of a clamping jig for semiconductor laser bars according to the present invention, wherein each laser bar is mounted between two supporting plates.FIG. 4 is a cross-sectional view of the clamping jig taken along line II-II inFIG. 3 .FIG. 5 is an entire configuration diagram which shows vacuum vapor deposition apparatus to which the clamping jig according to the present invention is mounted, andFIG. 6 is a partial cross-sectional view which shows the clamping jig mounted on a rotary dome of the vacuum vapor deposition apparatus. - The clamping jig according to the present embodiment is used for mounting the semiconductor laser bars 100 a formed by cleaving the
semiconductor wafer 100 formed of a material containing GaAs, In, or the like, into a number of bars, as shown inFIGS. 7A and 7B , in order to form reflection coating with predetermined reflectivity on a predetermined face of eachsemiconductor laser bar 100 a by vacuum vapor deposition. - Laser bars 100 a are subjected to vapor deposition, being mounted on a
rotary dome 12 provided in a chamber of a vacuumvapor deposition apparatus 1 shown inFIG. 5 . Accordingly, the laser bars 100 a are mounted to a clampingjig 10, following which each clampingjig 10 mounting the laser bars 100 a is mounted on therotary dome 12, whereby mounting of the laser bars 100 a onto therotary dome 12 is completed. - The clamping
jig 10 according to the present embodiment shown inFIGS. 1 through 4 includes multiple supportingbars 2 for supporting the laser bars 100 a, supportingbases 3 for mounting the supportingbars 2, a pressingmember 4 for pressing the supportingbars 2, and pressingcover members 5 for fixing both ends of each supportingbar 2 to the supportingbases 3. - Each supporting
bar 2 is formed of Si in the shape of a bar having supporting faces 21 for supporting the laser bars 100 a. The supporting faces 21 are formed on a pair of the front and back faces of longitudinal faces of the supporting bars. - The clamping
jig 10 includes multiple supportingbars 2, wherein the supportingbars 2 and the laser bars 100 a are alternately mounted thereon. At this time, the supporting faces 21 of each supportingbar 2 face the corresponding laser bars 100 a, and the electrode-formed face of eachlaser bar 100 a is in contact with the supportingface 21 of the corresponding supportingbar 2 such that eachlaser bar 100 a is held between a pair of the supporting bars 2. - Furthermore, each of the supporting
bars 2 are formed with a length greater than that of eachlaser bar 100 a in the longitudinal direction, and within a predetermined length so as to be mounted within a supportingframe 33 as described later, the width of the supportingface 21 being smaller than the width of the electrode-formed face of thelaser bar 100 a. - For example, each
laser bar 100 a is formed with a longitudinal length of 6.5 mm, a width (width of electrode-formed face) of 0.35 mm, and a thickness of 0.1 mm. On the other hand, each supportingbar 2 is formed with a longitudinal length of 18 mm, a width of the supporting face of 0.3 mm, and a thickness of 0.7 mm. - Furthermore, the supporting faces 21 (which is in contact with the laser bars 100 a) of each supporting
bar 2 are designed to have substantially the same coefficient of friction μb as the coefficient of friction μb of the faces of thelaser bar 100 a. For example, each of the laser bars 100 a is formed with a coefficient of friction μb of 0.54. On the other hand, each of the supportingbars 2 is formed with a coefficient of friction μa of 0.58. - The clamping
jig 10 according to the present embodiment shown inFIGS. 1 through 4 includes ten supportingbars 2 for mounting ninelaser bars 100 a. Note that whileFIGS. 1 through 4 show the clamping jig including a small number of laser bars for simplifying description, the clamping jig according to the present invention may include around 50 supportingbars 2 so as to mount around 50 laser bars. - The supporting
base 3 includes a disk-shaped mountingplate 31, a rectangular supportingplate 32 mounted at the middle portion of the mountingplate 31, and a supportingframe 33. The mountingplates 31 are mounted onto therotary dome 12 of thevacuum deposition apparatus 1. - While one face of the rectangular supporting
plate 32 is formed flat, the other face includes a recessed mountingface 321, on which the supportingbars 2 are mounted, between two erectedsides 322 extending along the two longitudinal sides of the supporting plate to the end portions thereof. According to the present embodiment, the clampingjig 10 is structured such that a single supportingplate 32 can be used at the time of vapor deposition process, as shown inFIGS. 1 and 2 , and a pair of the supportingplates 32 can be used for sandwiching the laser bars therebetween as shown inFIGS. 3 and 4 . - The mounting
face 321 is inserted within the supportingframe 33 such that the erectedsides 322 are pressed into contact with the supportingframe 33. The mountingface 321 is formed with a sufficient area for mounting all themultiple laser bars 100 a and multiple holdingbars 2 for supporting the laser bars 100 a without these bars protruding therefrom. - One side of the supporting
frame 33 serves as acontact portion 331 for being pressed into contact with the supportingface 21 of one of the supportingbars 2, and the side facing thecontact portion 331 serves as a supportingwall portion 332 for supporting aspring screw 41 of thepressing member 4. On the other hand, the other two sides serve as fixingportions 333 for fixing the erectedsides 322 of the supportingplate 32 or thepressing cover members 5. - The
contact portion 331 is pressed into contact with the supportingbar 2 mounted at the outermost portion thereof on the mountingface 321. With the present embodiment, first, one of the supportingbars 2 is mounted at the outermost portion on the mountingface 321 so as to be pressed into contact with thecontact portion 331, following which the laser bars 100 a and the other supportingbars 2 are alternately mounted on the mountingface 321. - The supporting
wall portion 332 includes a throughscrew hole 42 to which is screwed thespring screw 41. - The supporting
frame 33 can be detachably fixed to the mountingplate 31 byscrews 34 at thecontact portion 331 and the supportingwall portion 332. - The fixing
portions 333 are structured such that the erectedsides 322 of the mountingplate 32 and thepressing cover members 5 can be detachably fixed thereto withscrews 35 and screws 36, respectively. - The
pressing member 4 comprises thespring screw 41 of which the tip is formed of an elastic member, i.e., a spring, and thescrew hole 42 formed on the supportingwall portion 332. Thepressing member 4 has a configuration wherein upon the user turning thespring screw 41 screwed to thescrew hole 42 from the outside of the supportingwall portion 332, thespring screw 41 is pressed into contact with the supportingface 21 of the adjacent supportingbar 2 for supporting the laser bars 100 a. - The two
pressing cover members 5, which may be formed of a bar-shapedplate member 51, are detachably fixed onto the two fixingportions 333, respectively. One of the two bar-shapedplate members 51 is fixed to one of the fixingportions 333 with one end of each supportingbar 2 mounted on the mountingface 321 being covered therewith. The other bar-shapedplate member 51 is fixed to the other fixingportion 333 with the other end of each supportingbar 2 mounted on the mountingface 321 being covered therewith in the same manner. As described above, with the present embodiment, both ends of each supportingbar 2 are covered with a pair of the bar-shapedplate members 51 so as not to fall down from the mountingface 321. - In the present embodiment, one of the two supporting
plate 32 is fixed to the fixingportions 333 of the supportingframe 33, and the supportingframe 33 to which the supportingplate 32 has been fixed is fixed to the mountingplate 31 such that the supportingplate 32 is introduced between the fixingportions 333 and the mountingplate 31. - In the case of applying vapor deposition onto the face of one side of the laser bars 100 a, the
spring screw 41 forming thepressing member 4 is loosened in thescrew hole 42, following which the multiple supportingbars 2 and the laser bars 100 a are alternately mounted on the mountingface 321 of the supportingbase 3 with the supporting face of each supportingbar 2 being in contact with the electrode-formed face of thecorresponding laser bar 100 a, or the back face thereof, i.e., eachlaser bar 100 a is mounted so as to be introduced between the supporting bars 2. - At this time, the laser bars 100 a are each mounted at the middle portion along the longitudinal direction of the supporting
bar 2 such that even in the state that the bar-shapedplate members 51 are fixed to the fixingportions 333, the ends of eachlaser bar 100 a are not covered with the bar-shapedplate members 51. Note that in the state that the supportingbars 2 and the laser bars 100 a are mounted on the mountingface 321, the deposition-face of eachlaser bar 100 a protrudes from the top faces of the supportingbars 2 as shown inFIG. 2 . - Following mounting of the supporting
bars 2 and the laser bars 100 a onto the mountingface 321, the tip of thespring screw 41 is pressed into contact with the supportingface 21 of the supportingbar 2 by turning thespring screw 41 screwed to thescrew hole 42 in the tightening direction. Thus, the supportingbar 2 is pressed toward thepressing portion 331 by thespring screw 41, and thus, eachlaser bar 100 a is held by the adjacent supportingbars 2 due to increased contact pressure on the face between the supportingbar 2 and thelaser bar 100 a. - Subsequently, one of the bar-shaped
plate members 51 is fixed to one of the fixingportions 333 with one end of each supportingbar 2 mounted on the mountingface 321 being covered therewith. The other bar-shapedplate member 51 is fixed to the other fixingportions 333 with the other end of each supportingbar 2 mounted on the mountingface 321 being covered therewith, as well. Thus, both ends of each supportingbar 2 are covered with a pair of the bar-shapedplate members 51 so as to prevent the supportingbars 2 from falling down from the mountingface 321, whereby mounting of the laser bars 100 a onto the clampingjig 10 is completed. Subsequently, the clampingjig 10 mounting the laser bars 100 a is mounted onto therotary dome 12 in the vacuumvapor deposition apparatus 1. - The vacuum
vapor deposition apparatus 1 includes therotary dome 12 and amonitor substrate 13 on the upper portion in thechamber 11, and further includes acrucible 14, an ion beam gun (EB gun) 15, anion gun 16, and an optical film-thickness monitor 17, as shown inFIG. 5 . - The
chamber 11 has a configuration for maintaining a predetermined degree of vacuum by evacuating through anexhaust vent 18. Therotary dome 12 is rotatably mounted onto the ceiling of thechamber 11, and has multiple mountingopenings 121 for mounting the multiple clamping jigs 10. The clampingjig 10 is mounted to the mountingopening 121 such that the supportingframe 33 and the supportingplate 32 are inserted into the mountingopenings 121 from the ceiling side of therotary dome 12 as shown inFIG. 6 . - The
rotary dome 12 includes theaforementioned monitor substrate 13 at the middle portion on the lower face thereof. At the time of vapor deposition, the optical film-thickness monitor 17 casts light onto themonitor substrate 13 so as to be reflected therefrom. The optical film-thickness monitor 17 receives the light reflected from themonitor substrate 13 in order to measure the change in the light intensity between the incident light and the reflected light. - A description is made below regarding vapor deposition process for the laser bars 100 a. First, the clamping
jig 10 is mounted onto therotary dome 12 such that the deposition-face of eachlaser bar 100 a faces the vapor source. On the other hand, a vapor deposition material, e.g., Al2O3, Si, is loaded into thecrucible 14. Subsequently, thechamber 11 is evacuated through theexhaust vent 18, and is maintained at a predetermined degree of vacuum. - Subsequently, the light is cast from the optical film-
thickness monitor 17 onto themonitor substrate 13. The light reflected from themonitor substrate 13 is received by the optical film-thickness monitor 17 so as to measure the change in the light intensity. - Following the above-described preparation, the output of the
EB gun 15 is gradually increased while rotating therotary dome 12 so as to cast an ion beam from theEB gun 15 onto the vapor source within thecrucible 14 in order to evaporate the vapor source toward therotary dome 12, whereby reflection coating is formed on the laser bars 100 a. Note that therotary dome 12 is rotated in order to form reflection coating with high uniformity. - Furthermore, an ion beam is cast from the
ion gun 16 at the same time as theEB gun 15. The ion beam is cast from theion gun 16 in order to assist adhesion of the vapor deposition film onto the end faces of the laser bars due to evaporation of the vapor source toward therotary dome 12, as well as preventing the vapor deposition film formed on the end faces of the laser bars from separating therefrom. - Subsequently, upon the change in the light intensity measured by the optical film-
thickness monitor 17 reaching a predetermined value, the output of theEB gun 15 is stopped as well as stopping rotation of therotary dome 12. Following cooling of the inside of thechamber 11, the vacuum inside thechamber 11 is released, and the clampingjig 10 is retrieved from thechamber 11, whereby vapor deposition process for the laser bars 100 a is completed. - Subsequently, the clamping
jig 10 is retrieved from therotary dome 12, following which the second vapor deposition for the other side faces of the laser bars is performed as follows. In the preparation for the second vapor deposition, first, the pair of the bar-shapedplate members 51 is removed from the fixingportions 333 of the supportingframe 33 of the clampingjig 10 retrieved from therotary dome 12, following which another new supportingplate 32 is fixed onto the fixingportions 333 instead of the bar-shapedmembers 51. Mounting of the supportingframe 32 onto the fixingportions 333 leads to the state wherein the laser bars 100 a and the supportingbars 2 are stored between the two supportingplates 32. - Subsequently, the supporting
frame 33 with the two supportingplates 32 mounted thereon is temporarily separated from the mountingplate 31, and is turned over, following which the supportingframe 33 is fixed onto the mountingplate 31 again such that the supportingplate 32 which has been fixed during this preparation faces the mountingplate 31. - Subsequently, the other supporting
plate 32, i.e., the supportingplate 32 which has been fixed for the first vapor deposition, is removed from the supportingframe 33, and instead of the removed supportingplate 32, the aforementioned pair of bar-shapedplate members 51 is fixed to the fixingportions 333 of the supportingframe 33 such that both ends of each supportingbar 2 are covered therewith. Note that in this state in which the bar-shapedplate members 51 are fixed onto the supportingframe 33, the other side face (which has not been coated with any vapor deposition film) of eachlaser bar 100 a is exposed. - Subsequently, the clamping
jig 10 mounting the laser bars 100 a is mounted onto therotary dome 12 with the other end face of eachlaser bar 100 a which has not been coated with any vapor deposition film being exposed, following which vapor deposition process is performed with the vapor deposition apparatus in the same manner as described above. - Thus, with the present embodiment, each of the laser bars 100 a are mounted so as to be held by the supporting
bars 2 such that no part of the side face (deposition-face) of eachlaser bar 100 a is covered with a member of any sort, thereby allowing reflection coating to be formed over the entire face of the side face of eachlaser bar 100 a. - Furthermore, with the present embodiment, preparation for vapor deposition to the respective deposition-faces of each
laser bar 100 can be made simply by replacing thepressing cover members 5 and supportingplate 32 without removing the laser bars 100 from the supportingframe 33. This facilitates mounting and retrieving of the laser bars 100 a by the user. - Furthermore, with the present embodiment, even in the event that the
multiple laser bars 100 a have been formed with different lengths, themultiple laser bars 100 a can be mounted on asingle clamping jig 10 so as to perform vapor deposition at the same time. In particular, even in the event that anylaser bars 100 a have been broken into excessively short lengths in cleaving process, for example, such short-length laser bars 100 a can be subjected to vapor deposition process along withother laser bars 100 a having a normal length. As described above, with the present embodiment, themultiple laser bars 100 a can be subjected to vapor deposition process simultaneously regardless of the length thereof, which enables increased application as a clamping jig. - In particular, the supporting
face 21 of each supportingbar 2 is formed with generally the same coefficient of friction as the laser bars 100 a, and thus, the supportingbars 2 suitably hold the laser bars 100 a therebetween. - Furthermore, with the present embodiment, the supporting
bars 2 for holding the laser bars 100 a are each formed in the shape of a bar, accordingly each supportingbar 2 is minimally deformed (distorted) due to heat during vapor deposition, thereby lessening deformation of the laser bars 100 a. - Furthermore, reflection coating can be formed over the entire face of the side face (deposition-face) of each
laser bar 100 a with excellent uniformity since eachlaser bar 100 a is subjected to vapor deposition process in a state in which the vapor is allowed to surround a part of the electrode-formed face, i.e., an exposed part protruding from the adjacent supporting bars 2. - Furthermore, with the present embodiment, the
spring screw 41 of thepressing member 4 presses the supportingbars 2, thereby increasing the contact pressure on the face between the supportingbar 2 and thelaser bar 100 a, and thus, eachlaser bar 100 a is held by the adjacent supportingbars 2 in a secure manner. - Furthermore, with the present embodiment, the pressing
member 4 presses the supportingbars 2, and accordingly, even in the event that any supportingbar 2 falls down from the supportingbase 3, the resultant gap is immediately filled with the adjacent supportingbar 2. Thus, even in the event that any supportingbar 2 falls down from the supportingbase 3, theother laser bars 100 a can be held by the supportingbars 2 without slanting, thereby allowing reflection coating to be formed on the side face of eachlaser bar 100 a with a precise film thickness. - Furthermore, with the present embodiment, the
pressing cover members 5 cover both ends of each supportingbar 2 so as to prevent the supportingbar 2 from falling down from the supportingbase 3, and thus, it is possible to prevent each supportingbar 2 from falling down from the supportingbase 3, while the entire deposition-face of eachlaser bar 100 a is exposed. - Note that while the description has been made regarding the arrangement wherein the reflection coating is formed on each laser bar by vapor deposition, the clamping jig according to the present invention can be employed in an arrangement wherein the reflection coating is formed by sputtering.
- With the clamping jig according to the present invention, each laser bar is mounted between the supporting bars so as to be held by the adjacent supporting bars without any part of the deposition-face of each laser bar being covered by any member, thereby allowing reflection coating to be formed over the entire deposition-face of each laser bar in a secure manner.
- Furthermore, preparation for vapor deposition or sputtering process for both deposition faces of each laser bar can be made simply by replacing pressing cover members and a supporting plate onto the supporting frame without removing the laser bars from the supporting frame. This facilitates mounting and retrieving of the laser bars to and from the clamping jig by the user.
Claims (6)
1. A clamping jig for mounting semiconductor laser bars formed by cleaving a semiconductor wafer so as to form reflection coating with predetermined reflectivity by vapor deposition or sputtering on a predetermined face thereof, said jig comprising:
a plurality of supporting bars for holding said laser bars therebetween;
a pair of supporting plates having a mounting face for mounting said supporting bars in a row;
a pressing member for pressing said supporting bars for holding said laser bars through the supporting faces thereof;
pressing cover members for covering both ends of each supporting bar so as to prevent each supporting bar from falling down from said supporting plate; and
a supporting frame for detachably supporting said supporting plates and pressing cover members;
wherein each supporting bar is formed with a longitudinal length greater than said laser bar, and within a predetermined length so as to be mounted within said supporting frame; and
wherein said pair of supporting plates can be mounted on said supporting frame with said mounting faces facing one another at a predetermined interval,
or wherein only one of said pair of supporting plates can be mounted on said supporting frame, and said pressing cover members instead of the other supporting plate can be mounted on said supporting frame.
2. A clamping jig for mounting semiconductor laser bars according to claim 1 , wherein the mounting face of said supporting plate can be inserted within said supporting frame.
3. A clamping jig for mounting semiconductor laser bars according to claim 1 , wherein said pressing cover member is formed of a bar-shaped plate member or a rod-shaped member so as to cover one end of each of said semiconductor laser bars at the same time.
4. A clamping jig for mounting semiconductor laser bars according to claim 1 , wherein the supporting face of said supporting bar has a smaller width than the width of the electrode-formed face of the laser bar.
5. A clamping jig for mounting semiconductor laser bars according to claim 1 , wherein the supporting face of said supporting bar is formed with a coefficient of friction μa equal to or greater than 0.9 μb and equal to or smaller than 1.1 μb, wherein μb represents the coefficient of friction of the surface of said semiconductor laser bar.
6. A clamping jig for mounting semiconductor laser bars according to claim 1 , wherein said supporting bar is formed of Si.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US11/940,415 US7595089B2 (en) | 2003-05-13 | 2007-11-15 | Deposition method for semiconductor laser bars using a clamping jig |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP135090/2003 | 2003-05-13 | ||
JP2003135090A JP4038679B2 (en) | 2003-05-13 | 2003-05-13 | Fixing jig for semiconductor laser bar |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/940,415 Division US7595089B2 (en) | 2003-05-13 | 2007-11-15 | Deposition method for semiconductor laser bars using a clamping jig |
Publications (1)
Publication Number | Publication Date |
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US20050000451A1 true US20050000451A1 (en) | 2005-01-06 |
Family
ID=33525469
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/843,976 Abandoned US20050000451A1 (en) | 2003-05-13 | 2004-05-11 | Clamping jig for semiconductor laser bars |
US11/940,415 Active 2024-09-13 US7595089B2 (en) | 2003-05-13 | 2007-11-15 | Deposition method for semiconductor laser bars using a clamping jig |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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US11/940,415 Active 2024-09-13 US7595089B2 (en) | 2003-05-13 | 2007-11-15 | Deposition method for semiconductor laser bars using a clamping jig |
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US (2) | US20050000451A1 (en) |
JP (1) | JP4038679B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080121183A1 (en) * | 2003-05-13 | 2008-05-29 | Sumitomo Electric Industries, Ltd. | Deposition Method for Semiconductor Laser Bars Using a Clamping Jig |
US8277877B1 (en) * | 2006-05-15 | 2012-10-02 | Finisar Corporation | Method for applying protective laser facet coatings |
CN108707872A (en) * | 2018-07-16 | 2018-10-26 | 五邑大学 | A kind of magnetron sputtering fabric sample clamper |
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JP2010141208A (en) * | 2008-12-12 | 2010-06-24 | Sumitomo Electric Ind Ltd | Visual inspection device and visual inspection method for semiconductor laser chip or semiconductor laser bar |
JP5150581B2 (en) * | 2009-08-05 | 2013-02-20 | シャープ株式会社 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND LIGHT EMITTING ELEMENT MANUFACTURING METHOD |
JP5611007B2 (en) * | 2010-11-26 | 2014-10-22 | 株式会社クボタ | Part spraying method and component spraying device |
JP5323879B2 (en) * | 2011-01-27 | 2013-10-23 | ローム株式会社 | Semiconductor laser element |
US8599895B2 (en) | 2011-01-27 | 2013-12-03 | Rohm Co., Ltd. | Semiconductor laser device and manufacturing method thereof |
US8446927B2 (en) | 2011-01-27 | 2013-05-21 | Rohm Co., Ltd. | Semiconductor laser device and manufacturing method thereof |
Citations (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3638930A (en) * | 1970-04-24 | 1972-02-01 | Sylvania Electric Prod | Refractory metal boat for heat treating coils |
US3877134A (en) * | 1974-01-02 | 1975-04-15 | Motorola Inc | Method of making universal wafer carrier |
US4153164A (en) * | 1978-06-13 | 1979-05-08 | Kasper Instruments, Inc. | Carrier for semiconductive wafers |
US4228902A (en) * | 1979-02-21 | 1980-10-21 | Kasper Instruments, Inc. | Carrier for semiconductive wafers |
US4381965A (en) * | 1982-01-06 | 1983-05-03 | Drytek, Inc. | Multi-planar electrode plasma etching |
US4470856A (en) * | 1983-02-07 | 1984-09-11 | Hughes Aircraft Company | Self-compensating hydrostatic flattening of semiconductor substrates |
US4566839A (en) * | 1983-05-18 | 1986-01-28 | Microglass, Inc. | Semiconductor wafer diffusion boat and method |
US4661033A (en) * | 1984-08-22 | 1987-04-28 | Pacific Western Systems, Inc. | Apparatus for unloading wafers from a hot boat |
US4679689A (en) * | 1985-09-03 | 1987-07-14 | General Signal Corporation | Processing, shipping and/or storage container for photomasks and/or wafers |
US4745470A (en) * | 1986-04-04 | 1988-05-17 | Olympus Optical Co., Ltd. | Endoscope using a chip carrier type solid state imaging device |
US4779732A (en) * | 1985-07-09 | 1988-10-25 | Basf Aktiengesellschaft | Container for a plurality of disk-shaped articles and container part thereof |
US4841906A (en) * | 1986-11-12 | 1989-06-27 | Heraeus Amersil, Inc. | Mass transferable semiconductor substrate processing and handling full shell carrier (boat) |
US4873942A (en) * | 1988-06-08 | 1989-10-17 | The Stackpole Corporation | Plasma enhanced chemical vapor deposition wafer holding fixture |
US5007788A (en) * | 1988-04-25 | 1991-04-16 | Tel Sagami Limited | Pitch changing device for changing pitches of plate-like objects and method of changing pitches |
US5054418A (en) * | 1989-05-23 | 1991-10-08 | Union Oil Company Of California | Cage boat having removable slats |
US5090432A (en) * | 1990-10-16 | 1992-02-25 | Verteq, Inc. | Single wafer megasonic semiconductor wafer processing system |
US5154873A (en) * | 1989-12-11 | 1992-10-13 | Naoetsu Electronics Company | Method and apparatus for mounting slice base on wafer of semiconductor |
US5183378A (en) * | 1990-03-20 | 1993-02-02 | Tokyo Electron Sagami Limited | Wafer counter having device for aligning wafers |
US6216874B1 (en) * | 1998-07-10 | 2001-04-17 | Fluoroware, Inc. | Wafer carrier having a low tolerance build-up |
US20010022703A1 (en) * | 1998-07-01 | 2001-09-20 | Mccutcheon Jeffrey W. | Damped spacer articles and disk drive assemblies containing damped spacer articles |
US6295307B1 (en) * | 1997-10-14 | 2001-09-25 | Decade Products, Inc. | Laser diode assembly |
US6321680B2 (en) * | 1997-08-11 | 2001-11-27 | Torrex Equipment Corporation | Vertical plasma enhanced process apparatus and method |
US6537010B2 (en) * | 1999-07-07 | 2003-03-25 | Amtech Systems, Incorporated | Wafer boat support and method for twin tower wafer boat loader |
US6776289B1 (en) * | 1996-07-12 | 2004-08-17 | Entegris, Inc. | Wafer container with minimal contact |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US625307A (en) * | 1899-05-23 | Baling-press | ||
GB9405914D0 (en) * | 1994-03-24 | 1994-05-11 | Discovision Ass | Video decompression |
JP3134874B2 (en) * | 1986-08-21 | 2001-02-13 | ザ・トラステイーズ・オブ・コロンビア・ユニヴアーシテイ・イン・ザ・シテイ・オブ・ニユー・ヨーク | Use of DNA encoding T cell surface protein T4 and T4 fragment for AIDS treatment |
US5153164A (en) * | 1989-05-22 | 1992-10-06 | Hoechst Celanese Corporation | Catalyst system for preparing polyethylene terephthalate |
CA2093427C (en) * | 1990-10-17 | 2008-01-15 | Marvin S. Reitz, Jr. | Molecular clones of hiv-1 and uses thereof |
US5925741A (en) * | 1992-12-31 | 1999-07-20 | Ramot University Authority For Applied Research And Industrial Development Ltd. | Antibodies directed against binding-associated epitopes |
EP0676966A4 (en) * | 1992-12-31 | 1997-01-29 | Univ Ramot | Antibodies directed against binding-associated epitopes. |
DE69428896T2 (en) * | 1993-05-07 | 2002-06-20 | Akzo Nobel Nv | HIV IMMUNOGENEOUS COMPLEXES |
KR970007078Y1 (en) * | 1994-06-03 | 1997-07-15 | Lg Semicon Co Ltd | Devices feeding apparatus |
IL119587A (en) * | 1996-11-07 | 2000-12-06 | Univ Ramot | Method of preparing and for obtaining bimolecular interactions |
US6060316A (en) * | 1998-06-09 | 2000-05-09 | President And Fellows Of Harvard College | Methods of targeting of viral entry |
US6087200A (en) * | 1998-08-13 | 2000-07-11 | Clear Logic, Inc. | Using microspheres as a stress buffer for integrated circuit prototypes |
JP2002164609A (en) | 2000-11-28 | 2002-06-07 | Sharp Corp | Semiconductor laser element and its manufacturing method |
JP4038679B2 (en) | 2003-05-13 | 2008-01-30 | 住友電気工業株式会社 | Fixing jig for semiconductor laser bar |
-
2003
- 2003-05-13 JP JP2003135090A patent/JP4038679B2/en not_active Expired - Lifetime
-
2004
- 2004-05-11 US US10/843,976 patent/US20050000451A1/en not_active Abandoned
-
2007
- 2007-11-15 US US11/940,415 patent/US7595089B2/en active Active
Patent Citations (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3638930A (en) * | 1970-04-24 | 1972-02-01 | Sylvania Electric Prod | Refractory metal boat for heat treating coils |
US3877134A (en) * | 1974-01-02 | 1975-04-15 | Motorola Inc | Method of making universal wafer carrier |
US4153164A (en) * | 1978-06-13 | 1979-05-08 | Kasper Instruments, Inc. | Carrier for semiconductive wafers |
US4228902A (en) * | 1979-02-21 | 1980-10-21 | Kasper Instruments, Inc. | Carrier for semiconductive wafers |
US4381965A (en) * | 1982-01-06 | 1983-05-03 | Drytek, Inc. | Multi-planar electrode plasma etching |
US4470856A (en) * | 1983-02-07 | 1984-09-11 | Hughes Aircraft Company | Self-compensating hydrostatic flattening of semiconductor substrates |
US4566839A (en) * | 1983-05-18 | 1986-01-28 | Microglass, Inc. | Semiconductor wafer diffusion boat and method |
US4661033A (en) * | 1984-08-22 | 1987-04-28 | Pacific Western Systems, Inc. | Apparatus for unloading wafers from a hot boat |
US4779732A (en) * | 1985-07-09 | 1988-10-25 | Basf Aktiengesellschaft | Container for a plurality of disk-shaped articles and container part thereof |
US4679689A (en) * | 1985-09-03 | 1987-07-14 | General Signal Corporation | Processing, shipping and/or storage container for photomasks and/or wafers |
US4745470A (en) * | 1986-04-04 | 1988-05-17 | Olympus Optical Co., Ltd. | Endoscope using a chip carrier type solid state imaging device |
US4841906A (en) * | 1986-11-12 | 1989-06-27 | Heraeus Amersil, Inc. | Mass transferable semiconductor substrate processing and handling full shell carrier (boat) |
US5007788A (en) * | 1988-04-25 | 1991-04-16 | Tel Sagami Limited | Pitch changing device for changing pitches of plate-like objects and method of changing pitches |
US4873942A (en) * | 1988-06-08 | 1989-10-17 | The Stackpole Corporation | Plasma enhanced chemical vapor deposition wafer holding fixture |
US5054418A (en) * | 1989-05-23 | 1991-10-08 | Union Oil Company Of California | Cage boat having removable slats |
US5154873A (en) * | 1989-12-11 | 1992-10-13 | Naoetsu Electronics Company | Method and apparatus for mounting slice base on wafer of semiconductor |
US5183378A (en) * | 1990-03-20 | 1993-02-02 | Tokyo Electron Sagami Limited | Wafer counter having device for aligning wafers |
US5090432A (en) * | 1990-10-16 | 1992-02-25 | Verteq, Inc. | Single wafer megasonic semiconductor wafer processing system |
US6776289B1 (en) * | 1996-07-12 | 2004-08-17 | Entegris, Inc. | Wafer container with minimal contact |
US6321680B2 (en) * | 1997-08-11 | 2001-11-27 | Torrex Equipment Corporation | Vertical plasma enhanced process apparatus and method |
US6295307B1 (en) * | 1997-10-14 | 2001-09-25 | Decade Products, Inc. | Laser diode assembly |
US20010022703A1 (en) * | 1998-07-01 | 2001-09-20 | Mccutcheon Jeffrey W. | Damped spacer articles and disk drive assemblies containing damped spacer articles |
US6216874B1 (en) * | 1998-07-10 | 2001-04-17 | Fluoroware, Inc. | Wafer carrier having a low tolerance build-up |
US6537010B2 (en) * | 1999-07-07 | 2003-03-25 | Amtech Systems, Incorporated | Wafer boat support and method for twin tower wafer boat loader |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080121183A1 (en) * | 2003-05-13 | 2008-05-29 | Sumitomo Electric Industries, Ltd. | Deposition Method for Semiconductor Laser Bars Using a Clamping Jig |
US7595089B2 (en) | 2003-05-13 | 2009-09-29 | Sumitomo Electric Industries, Ltd. | Deposition method for semiconductor laser bars using a clamping jig |
US8277877B1 (en) * | 2006-05-15 | 2012-10-02 | Finisar Corporation | Method for applying protective laser facet coatings |
CN108707872A (en) * | 2018-07-16 | 2018-10-26 | 五邑大学 | A kind of magnetron sputtering fabric sample clamper |
Also Published As
Publication number | Publication date |
---|---|
JP2004339544A (en) | 2004-12-02 |
US7595089B2 (en) | 2009-09-29 |
US20080121183A1 (en) | 2008-05-29 |
JP4038679B2 (en) | 2008-01-30 |
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