US20040231798A1 - Gas delivery system for semiconductor processing - Google Patents
Gas delivery system for semiconductor processing Download PDFInfo
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- US20040231798A1 US20040231798A1 US10/825,831 US82583104A US2004231798A1 US 20040231798 A1 US20040231798 A1 US 20040231798A1 US 82583104 A US82583104 A US 82583104A US 2004231798 A1 US2004231798 A1 US 2004231798A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Abstract
A replaceable gas nozzle is insertable in a gas distributor ring of a substrate processing chamber and that can be shielded within the chamber. The replaceable gas nozzle has a longitudinal ceramic body having a channel to direct the flow of the gas into the chamber. The ceramic body includes a first external thread to mate with the gas distributor ring, and a second external thread to receive a heat shield. The channel has an inlet to receive the gas from the gas distributor ring and a pinhole outlet to release the gas into the chamber. A heat shield can be used to shield the nozzle extending into the chamber. The heat shield has a hollow member configured to be coupled with the nozzle that has an internal dimension sufficiently large to be disposed around at least a portion of the nozzle. The hollow member also has an extension which projects distally of the outlet of the nozzle and a heat shield opening for the process gas to flow therethrough from the nozzle outlet.
Description
- This application is a continuation-in-part of U.S. patent application Ser. No. 10/630,989, entitled “Gas Delivery System for Semiconductor Processing,” to Gondhalekar et al., filed on Jul. 28, 2003, which is based on and claims the benefit of U.S. Provisional Patent Application No. 60/410,353, entitled “Gas Delivery System for Semiconductor Processing,” to Gondhalekar et al., filed on Sep. 13, 2002. Both of these applications are incorporated herein by reference in their entirety.
- This invention relates generally to a gas delivery system for semiconductor processing.
- The fabrication of integrated circuits (ICs) involves performing a number of processes on a substrate in a process chamber, including the deposition of layers on the substrate, etching of gaps in the substrate, and filling of the gaps. The process chamber typically comprises a gas distributor having nozzles extending into the chamber, a gas energizer, and an exhaust port to remove the gas. The gas energizer may include electrodes to which a bias power is applied or an antenna to which a source power is applied. Periodically, between each substrate processing cycle, the internal surfaces of the chambers are cleaned in a cleaning process to remove accumulated process residues that form on the chamber components and surfaces.
- Chemical vapor deposition (CVD) is a gas process used in the semiconductor industry to deposit material on a substrate. Some high density plasma (HDP) enhanced CVD processes use a gas along with ion generation through the use of a high frequency generated plasma, such as an RF plasma, to enhance deposition by attraction of the positively charged plasma ions onto a negatively biased substrate surface at angles near the vertical to the surface, or at preferred angles to the surface by directional biasing of the substrate surface. The high RF power HDP-CVD process results in improved gapfill, particularly for gaps having a width of equal to or less than about 90 nm and an aspect ratio of at least about 4. For example, the source RF power is at least about 10 kW for processing 200 mm substrates and the source RF power is at least about 12 kW for processing 300 mm substrates.
- However, the higher RF powers used for gap filling in CVD processes, can increase particle generation in the chamber. This occurs because the plasma species having increased energy impinge upon and cause flaking of the accumulated deposits from internal surfaces in the chamber, particularly from the nozzles of a gas distributor. The flaked particles land on the substrate and reduce its yields. Cleaning the chamber surfaces by a plasma cleaning process that is performed after the processing of every substrate, can reduce the accumulation of the process residues, and thereby provide better yields. However, this extra cleaning step between each process cycle results in a lot of chamber downtime, which undesirably increases capitalization costs.
- Thus, it is desirable to have a process chamber capable of accepting higher RF powers in processes, such as CVD processes. It is also desirable to have a gas distributor that does not generate excessive residues in the chamber. It is further desirable to maximize the number of substrate process cycles between each cleaning cycle to more efficiently utilize the chamber.
- A replaceable gas nozzle is insertable in a gas distributor ring of a substrate processing chamber and can be shielded within the chamber. The replaceable gas nozzle has a longitudinal ceramic body having a channel to direct the flow of the gas into the chamber. The ceramic body includes a first external thread to mate with the gas distributor ring, and a second external thread to receive a heat shield. The channel has an inlet to receive the gas from the gas distributor ring and a pinhole outlet to release the gas into the chamber.
- In another embodiment, a heat shield is also provided for shielding the nozzle extending into the chamber. The heat shield has a hollow member configured to be coupled with the nozzle. The hollow member has an internal dimension sufficiently large to be disposed around at least a portion of the nozzle. The hollow member also has an extension which projects distally of the outlet of the nozzle and a heat shield opening for the process gas to flow therethrough from the nozzle outlet.
- FIG. 1 is a simplified diagram of an exemplary embodiment of a high density plasma chemical vapor deposition (HDP-CVD) system;
- FIG. 2 is a simplified cross section of a gas distributor ring that may be used in conjunction with the exemplary HDP-CVD system of FIG. 1;
- FIG. 3 is a cross-sectional view of an embodiment of a nozzle;
- FIGS. 4a,b are partial cross-sectional views of an embodiment of a nozzle and a heat shield; and
- FIG. 5 is a graph showing plots of the number of generated particles over processing time that compares the experimental results of a CVD system that is absent heat shields for the nozzles and a CVD system having heat shields about the nozzles.
- FIG. 1 illustrates an embodiment of a high density plasma chemical vapor deposition, such as a HDP-
CVD type system 10, in which a dielectric layer can be deposited on a substrate. Thesystem 10 includes achamber 13, avacuum system 70, asource plasma system 80A, abias plasma system 80B, agas delivery system 33, and a remoteplasma cleaning system 50. The upper portion ofchamber 13 has aceiling 14 that can be a straight wall or a dome shape, which is made of a ceramic material, such as, aluminum oxide, silicon oxide or aluminum nitride, or a metal, such as aluminum. Theceiling 14 defines an upper boundary of aplasma processing region 16.Plasma processing region 16 is bounded on the bottom by the upper surface of asubstrate 17 and asubstrate support 18. - A
heater plate 23 and acold plate 24 surmount, and are thermally coupled to,ceiling 14.Heater plate 23 andcold plate 24 allow control of the ceiling temperature to within about ±10° C. over a range of about 100° C. to about 200° C. This allows optimizing the ceiling temperature for the various processes. For example, it may be desirable to maintain the ceiling at a higher temperature for cleaning or etching processes than for deposition processes. Accurate control of the ceiling temperature also reduces the flake or particle counts in the chamber and improves adhesion between the deposited layer and the substrate. - Generally, exposure to the plasma heats a substrate positioned on
substrate support 18.Substrate support 18 includes inner and outer passages (not shown) that can deliver a heat transfer gas (sometimes referred to as a backside cooling gas) to the backside of the substrate. - The lower portion of
chamber 13 includes abody member 22, which joins the chamber to the vacuum system. Abase portion 21 ofsubstrate support 18 is mounted on, and forms a continuous inner surface with,body member 22. Substrates are transferred into and out ofchamber 13 by a robot blade (not shown) through an insertion/removal opening (not shown) in the side ofchamber 13. Lift pins (not shown) are raised and then lowered under the control of a motor (also not shown) to move the substrate from the robot blade at anupper loading position 57 to a lower processing position 56 in which the substrate is placed on asubstrate receiving portion 19 ofsubstrate support 18.Substrate receiving portion 19 includes anelectrostatic chuck 20 that secures the substrate tosubstrate support 18 during substrate processing. In a preferred embodiment,substrate support 18 is made from an aluminum oxide or aluminum ceramic material. -
Vacuum system 70 includesthrottle body 25, which houses three-blade throttle valve 26 and is attached togate valve 27 and turbo-molecular pump 28. It should be noted thatthrottle body 25 offers minimum obstruction to gas flow, and allows symmetric pumping, as described in co-pending, co-assigned U.S. patent application Ser. No. 08/574,839, filed Dec. 12, 1995, and which is incorporated herein by reference.Gate valve 27 can isolatepump 28 fromthrottle body 25, and can also control chamber pressure by restricting the exhaust flow capacity whenthrottle valve 26 is fully open. The arrangement of the throttle valve, gate valve, and turbo-molecular pump allow accurate and stable control of chamber pressures from between about 1 milli-Torr to about 2 Torr. - The
source plasma system 80A includes atop coil 29 andside coil 30, mounted onceiling 14. A symmetrical ground shield (not shown) reduces electrical coupling between the coils.Top coil 29 is powered by top source RF (SRF)generator 31A, whereasside coil 30 is powered byside SRF generator 31B, allowing independent power levels and frequencies of operation for each coil. This dual coil system allows control of the radial ion density inchamber 13, thereby improving plasma uniformity.Side coil 30 andtop coil 29 are typically inductively driven, which does not require a complimentary electrode. In a specific embodiment, the topsource RF generator 31A provides up to about 8,000 watts of RF power or higher at nominally 2 MHz and the sidesource RF generator 31B provides up to 8,000 watts of RF power or higher at nominally 2 MHz. The operating frequencies of the top and side RF generators may be offset from the nominal operating frequency (e.g. to 1.7-1.9 MHz and 1.9-2.1 MHz, respectively) to improve plasma-generation efficiency. - A
bias plasma system 80B includes a bias RF (BRF)generator 31C and abias matching network 32C. Thebias plasma system 80B capacitively couplessubstrate portion 17 tobody member 22, which act as complimentary electrodes. Thebias plasma system 80B serves to enhance the transport of plasma species (e.g., ions) created by thesource plasma system 80A to the surface of the substrate. In a specific embodiment, bias RF generator provides up to 8,000 watts of RF power or higher at 13.56 MHz. -
RF generators -
Matching networks generators respective coils - A
gas delivery system 33 provides gases fromseveral sources 34A-34F to the chamber for processing the substrate via gas delivery lines 38 (only some of which are shown). Gases delivered by thegas delivery system 33 can include, for example, silane, helium, and oxygen, which are used, for example, in the deposition of a silicon dioxide film. As would be understood by a person of skill in the art, the actual sources used forsources 34A-34F and the actual connection ofdelivery lines 38 tochamber 13 varies depending on the deposition and cleaning processes executed withinchamber 13. Gases are introduced intochamber 13 through agas distributor ring 37 and/or atop nozzle 45. FIG. 2 is a simplified, partial cross-sectional view ofchamber 13 showing additional details ofgas distributor ring 37. - In one embodiment, first and second gas sources,34A and 34B, and first and second gas flow controllers, 35A′ and 35B′, provide gas to ring
plenum 36 ingas distributor ring 37 via gas delivery lines 38 (only some of which are shown).Gas distributor ring 37 has a plurality ofgas nozzles 39A (only one of which is shown for purposes of illustration) that provides a uniform flow of gas over the substrate. Nozzle length and nozzle angle may be changed to allow tailoring of the uniformity profile and gas utilization efficiency for a particular process within an individual chamber. In one embodiment,gas distributor ring 37 has 24gas nozzles 39A made from an aluminum oxide ceramic. -
Gas distributor ring 37 also has a plurality ofgas nozzles 39B (only one of which is shown), which in a preferred embodiment are co-planar with and the same in length assource gas nozzles 39A, and in one embodiment receive gas frombody plenum 41.Gas nozzles chamber 13. In other embodiments, gases may be mixed prior to injecting the gases intochamber 13 by providing apertures (not shown) betweenbody plenum 41 and gasdistributor ring plenum 36. In one embodiment, third and fourth gas sources, 34C and 34D, and third and fourth gas flow controllers, 35C′ and 35D′, provide gas to body plenum via gas delivery lines 38. Additional valves, such as 43B (other valves not shown), may shut off gas from the flow controllers to the chamber. - In embodiments where flammable, toxic, or corrosive gases are used, it may be desirable to eliminate gas remaining in the gas delivery lines after a deposition. This may be accomplished using a 3-way valve, such as
valve 43B, to isolatechamber 13 fromdelivery line 38A and to ventdelivery line 38A to vacuumforeline 44, for example. As shown in FIG. 1, other similar valves, such as 43A and 43C, may be incorporated on other gas delivery lines. Such 3-way valves may be placed as close tochamber 13 as practical, to minimize the volume of the unvented gas delivery line (between the 3-way valve and the chamber). Additionally, two-way (on-off) valves (not shown) may be placed between a mass flow controller (“MFC”) and the chamber or between a gas source and an MFC. - Referring again to FIG. 1,
chamber 13 also hastop nozzle 45 andtop vent 46.Top nozzle 45 andtop vent 46 allow independent control of top and side flows of the gases, which improves film uniformity and allows fine adjustment of the film's deposition and doping parameters.Top vent 46 is an annular opening aroundtop nozzle 45. In one embodiment,first gas source 34A suppliessource gas nozzles 39 andtop nozzle 45.Source nozzle MFC 35A′ controls the amount of gas delivered to sourcegas nozzles 39 andtop nozzle MFC 35A controls the amount of gas delivered totop gas nozzle 45. Similarly, twoMFCs top vent 46 andoxidizer gas nozzles 39B from a single source of oxygen, such assource 34B. The gases supplied totop nozzle 45 andtop vent 46 may be kept separate prior to flowing the gases intochamber 13, or the gases may be mixed in top plenum 48 before they flow intochamber 13. Separate sources of the same gas may be used to supply various portions of the chamber. - In the embodiment shown in FIGS. 1 and 2, remote
plasma cleaning system 50 is provided to periodically clean deposition residues from chamber components. The cleaning system includes aremote gas activator 51 that creates a plasma inreactor cavity 53 from a cleaninggas source 34E comprising, for example, molecular fluorine, nitrogen trifluoride, other fluorocarbons or equivalents. Thereactor cavity 53 may comprise, for example, a toroidally or cylindrically shaped cavity. Theremote gas activator 51 may comprise, for example, an inductive coil wrapped around thereactor cavity 53, or a microwave generator coupled to thereactor cavity 53. An example of a remote plasma cleaning system commercially available is the Xstream Remote Plasma Source from Advanced Energy Industries, Inc, in Fort Collins, Colo. The reactive species resulting from this plasma are conveyed tochamber 13 through a cleaninggas feed port 54 via anapplicator tube 55. For example, in one embodiment, the cleaninggas feed port 54 feeds into plenum 48 and the cleaning gas enters into thechamber 13 throughtop vent 46. However, in other embodiments, the cleaninggas feed port 54 may be separate from plenum 48 andtop vent 46, feeding directly intochamber 13. The materials used to contain the cleaning plasma (e.g. cavity 53, and applicator tube 55) must be resistant to attack by the plasma. The distance betweenreactor cavity 53 and feedport 54 should be kept as short as practical, since the concentration of desirable plasma species may decline with distance fromreactor cavity 53. Generating the cleaning plasma in a remote cavity allows the use of an efficientremote gas activator 51 and does not subject chamber components to the temperature, radiation, or bombardment of the glow discharge that may be present in a plasma formed in situ. Consequently, relatively sensitive components, such aselectrostatic chuck 20, do not need to be covered with a dummy wafer or otherwise protected, as may be required with an in situ plasma cleaning process. -
System controller 60 controls the operation ofsystem 10.System controller 60 includes aprocessor 61 coupled to amemory 62. Preferably,memory 62 may be a hard disk drive, but ofcourse memory 62 may be other kinds of memory, such as ROM, PROM, and others. In another embodiment,controller 60 also includes a floppy disk drive (not shown) and a card rack (not shown). The card rack may contain a single-board computer (SBC) (not shown), analog and digital input/output boards (not shown), interface boards (not shown), and stepper motor controller boards (not shown). -
System controller 60 operates under the control of a computer program stored on the hard disk drive or other computer programs, such as programs stored on a floppy disk. The computer program dictates, for example, the timing, mixture of gases, RF power levels and other parameters of a particular process. The interface between a user and the system controller is via a monitor (not shown), such as a cathode ray tube, and a light pen (not shown). The computer program code can be written in any conventional computer readable programming language such as 68000 assembly language, C, C++, or Pascal. Suitable program code is entered into a single file, or multiple files, using a conventional text editor, and stored or embodied in a computer-usable medium, such as a memory system of the computer. If the entered code text is in a high level language, the code is compiled, and the resultant compiler code is then linked with an object code of precompiled library routines. To execute the linked compiled object code, the system user invokes the object code, causing the computer system to load the code in memory, from which the CPU reads and executes the code to perform the tasks identified in the program. - FIG. 3 shows a replaceable
ceramic gas nozzle 39 that is used to provide gas flow over the substrate in the chamber. Thegas nozzle 39 may be any one of thenozzles gas nozzle 39 comprises a longitudinalceramic body 82. In one version, theceramic body 82 is cylindrical. Thenozzle 39 andceramic body 82 have aproximal end 83 and adistal end 85. Theproximal end 83 of theceramic body 82 is connected to thegas distributor ring 37 and thedistal end 85 extends into thechamber 13. - The
ceramic body 82 comprises achannel 84 to direct the flow of the gas into thechamber 13. The size of thechannel 84 is selected to provide pressure and flow rate characteristics to the flow of gas. In one version, the channel cross-section is circular and has a symmetric diameter about the central axis of the channel. The axially centeredchannel 84 is sized by selecting the channel diameter. In one version, the channel diameter is about 1.1 mm to about 2.1 mm, or even about 1.5 mm to about 1.7 mm. The distance the gas travels through thechannel 84 corresponds to the total length of thenozzle 39. In one version, the length of thenozzle 39 is about 55 mm to about 67 mm, or even about 64 mm to about 66 mm, or even about 57 mm to about 59 mm. - The
channel 84 comprises aninlet 86 to receive the gas from thegas distributor ring 37. Theinlet 86 is located at the end of thechannel 84 at theproximal end 83 of theceramic body 82. Theinlet 86 is an opening having a diameter sized to receive a gas flow from thegas distributor ring 37. Thechannel 84 may comprise a taperedinlet portion 87 near theinlet 86 that constricts the width of the gas flow from the diameter of theinlet 86 to the channel diameter. The inlet diameter and the length of the taperedinlet portion 87 of thechannel 84 are selected to provide flow rate and pressure characteristics to the gas flow. For example, in one version, the inlet diameter can be about 2.5 to 3.5 mm, or even about 3.0 to 3.1 mm, and the taperedinlet portion 87 of thechannel 84 over which the gas flow is constricted can be about 0.8 to 1.8 mm, or even about 1.2 to 1.4 mm. - The
channel 84 comprises apinhole outlet 90 through which one or more process gases flow into thechamber 13 at thedistal end 85 of theceramic body 82. Thepinhole outlet 90 has a diameter do selected to provide gas flow rate and pressure characteristics to the flow of gas. In one version, the outlet diameter do may be about 0.3 mm to about 0.4 mm. The channel may also comprise an taperedoutlet portion 92 that constricts the gas flow from the channel diameter to the pinhole outlet diameter do. The taperedoutlet portion 92 provides a transition between the flow of the gas in thechannel 84 and the flow of the gas out of thepinhole outlet 90 without adversely affecting the gas flow characteristics. - The
proximal end 83 of the gas nozzleceramic body 82 connects to thegas distributor ring 37. Theceramic body 82 comprises a firstexternal thread 88 to mate with thegas distributor ring 37. The firstexternal thread 88 is sized to provide convenient and hermetic assembly of thenozzle 39 to thegas distributor ring 37. In one version, the firstexternal thread 88 is a UNF-2A (Unified National Fine, standard class, external thread) style thread, with about 0.9 to about 1.0 threads per mm, and about a 3.0 to 3.6 mm longitudinal section of thenozzle 39 threaded. The profile of theproximal end 83 of theceramic body 82 may also be adapted to mate with thegas distributor ring 37. For example, theproximal end 83 may include surfaces or have a geometry that conformally mates with corresponding surfaces or geometry of a receiving portion of thegas distributor ring 37. - Due to the process environment, the
nozzle 39 may experience unwanted deposition or degradation, and thus thenozzle 39 is designed to be replacable. For example, thenozzle 39 may be used to deliver etching or deposition gases to thechamber 13. These gases may further be activated by thesource plasma system 80A or thebias plasma system 80B. Such gases may produce deposits on thenozzle 39 or etch thenozzle 39. Over time, dimensional features of thenozzle 39, such as the pinhole outlet diameter do, may become distorted from the original specifications. Such distortion may cause undesirable change in the characteristics of the gas flow from thenozzle 39. Thus, thenozzle 39 is designed to be replaceable. The firstexternal thread 88 provides an interface between thegas nozzle 39 and thegas distributor ring 37 that allows replacement of thenozzle 39. - The
ceramic body 82 comprises adistal end 85 projecting into thechamber 13. Thedistal end 85 of thenozzle 39 is subject to the temperature rise from the energy generated in thechamber 13. Thedistal end 85 of thenozzle 39 is typically tapered into atip 93. The tapering of thedistal end 85 contributes to producing a uniform flow of gas over the substrate from thenozzle outlet 90. For example, thedistal end 85 of thenozzle 39 may taper at an angle of about 35 to 45° relative to a longitudinalcentral axis 94 of thechannel 84 in thenozzle 39. - The
nozzle body 82 comprises a secondexternal thread 89 to receive aheat shield 91. The secondexternal thread 89 is located proximally from thepinhole outlet 90 by a distance dst. The distance dst is selected to avoid impacting the characteristics of the flow of gas from thepinhole outlet 90. For example, the pinhole outlet diameter do is selected to provide a pressure and flow rate to the gas flow exiting thenozzle 39 into the chamber 1 3. The presence of the second threadedconnection 89 from thenozzle 39 to theheat shield 91 may adversely impact the fluid dynamics of the gas flow into thechamber 13. For instance, theheat shield 91 connected to thenozzle 39 at a location behind thepinhole outlet 90 may change the pressure gradient of gas external to thenozzle 39 in the spatial region from thepinhole outlet 90 to the secondexternal thread 89, which may affect the gas flow characteristics from thepinhole outlet 90. For this reason, the distance dst is selected to provide separation between thepinhole outlet 90 and the secondexternal thread 89 to avoid adverse effects of the secondexternal thread 89 on thepinhole outlet 90. In one version, the distance dst is selected to be about 90 to about 140 times do. In another version, the distance dst is selected to be about 30 mm to about 55 mm. - FIGS. 4a, b show a
heat shield 91 which can be used to shield thenozzle 39 from the heat generated in theCVD chamber 13 by plasma or other energy applied to perform a process in theCVD chamber 13. Due to the low thermal mass at thenozzle tip 93, thedistal end 85 of thenozzle 39 typically experiences the greatest temperature rise due to the energy generated in thechamber 13. It is thus desirable to shield the portion of thenozzle 39 exposed inside thechamber 13, including thedistal end 85 of thenozzle 39. As shown in FIG. 4a, b, theheat shield 91 is configured to be disposed around at least a portion of thenozzle 39, desirably around the entire portion of thenozzle 39 that is exposed in thechamber 13. Theheat shield 91 as shown is a separate piece that is coupled to thenozzle 39. For example, theheat shield 91 can have an internal thread 97 to mate with thenozzle 39. Such aheat shield 91 can be conveniently retrofitted onto nozzles in existing CVD chambers. Separate heat shield and nozzle components also have the advantage of each item being separately replaceable. However, in other embodiments, theheat shield 91 may be formed integrally with thenozzle 39. - In the embodiment shown, the
heat shield 91 has ahollow member 96 which has an internal dimension sufficiently large to be placed around thenozzle 39. In one version, thehollow member 96 is cylindrical. The internal cross-section of theheat shield 91 desirably is slightly larger than the external cross-section of thenozzle 39, as seen in FIG. 4. In the specific embodiment, the gap or spacing between theheat shield 91 and thenozzle 39 is smaller than the thickness of theheat shield 91. Theheat shield 91 includes a heat shield opening 95 through which the process gas flows from thenozzle pinhole outlet 90. Theheat shield 91 preferably includes anextension 98 which projects distally of thenozzle pinhole outlet 90 at thedistal end 85 of thenozzle 39. The length of theextension 98 should be sufficiently large to shield thedistal end 85 of thenozzle 39 from the heat in thechamber 13. The length of theextension 98 should not be so large as to have an adverse effect on the process being performed, such as the uniformity of a layer being formed on thesubstrate 17. Moreover, an excessivelylong extension 98 may produce additional particles. In some embodiments, the length of theextension 98 is between the radius of thenozzle 39 and the diameter of thenozzle 39. In one version, the length of theextension 98 is about 5 mm to about 8 mm. In a specific embodiment, the length of theextension 98 is about 6.4 mm, theheat shield 91 has a length of about 50.0 mm, an outer diameter of about 16.1 mm, and a thickness of about 3.9 mm. As shown in FIGS. 1 and 2, thenozzles substrate support 18. Heat shields 91 may be placed around some or all of thenozzles nozzles 39 andheat shields 91 are configured such that theheat shield openings 95 are disposed radially outwardly of the periphery of thesubstrate 17. That is, if theheat shields 91 are projected vertically downward onto the plane of thesubstrate 17, theheat shields 91 do not overlap with thesubstrate 17. - Although the
heat shield 91 as shown has a uniform circular cross-section with a uniform thickness, it is understood that other configurations, shapes, and thickness profiles may be employed in different embodiments. - The
nozzle 39 and theheat shield 91 are typically composed of a ceramic material. Ceramic materials are a good choice because they are stable at high operating temperatures. In one version thenozzle 39 andheat shield 91 are composed of aluminum oxide. In another version, thenozzle 39 andheat shield 91 are composed of aluminum nitride. In some embodiments, theheat shield 91 and thenozzle 39 are made of the same material, such as aluminum oxide or aluminum nitride, however in other embodiments, thenozzle 39 andheat shield 91 can each be made of different materials. In other versions, theheat shield 91 andnozzle 39 can be made from alternative materials, for example, metals such as aluminum. - In one version, the
nozzle 39 andheat shield 91 form a replaceable shieldedgas nozzle 99. In this version, the shielded gas nozzle can be replaced as a single unit. This version is advantageous when theheat shield 91 andnozzle 39 have dimensional relationships, for example, between do, dst, and the length of theextension 98, that are suitable for a particular process being conducted in thechamber 13. Using and replacing the shieldedgas nozzle 99 as a single unit preserves these dimensional relationships and thus increases the quality and reliability of the process conducted in thechamber 13. - The
heat shield 91 keeps the nozzle temperature relatively low to provide improved particle performance. A source of particles for high power recipes in plasma CVD chambers has been identified by a combination of modeling and experiments to be particles generated due to silane (SiH4) pyrolysis that results from an increase in nozzle temperature in the plasma at high source RF power levels. This gas phase particle nucleation mechanism produces hydrogenated Si clusters (e.g., Si2H6) as well as SiO2 particles due to plasma oxidation. Particle SEM plots show spherical particles consistent with gas phase nucleation. Thenozzles 39 andheat shields 91 decrease nozzle temperatures in thechamber 13 to impede the gas phase particle nucleation mechanism. Impeding the gas phase nucleation mechanism reduces particle generation, and thus reduces defects caused by particles falling on thesubstrate 17 being processed in thechamber 13. - The present invention is applicable to various processes including STI, IMD (inter-metal dielectric), PSG (phosphosilicate glass), FSG (fluosilicate glass), and the like. The lower operating temperatures of the
heat shield 91 andnozzle 39 also allow operation at higher power levels in theplasma CVD chamber 13, for instance, for improved gapfill capability. In addition to improved gapfill, reduced particle generation allows thechamber 13 to be used for a longer time forprocessing substrates 17 before thechamber 13 needs to be cleaned. This is referred to as multi-x clean. For example, without theheat shield 91 andnozzle 39 of the current invention, a cleaning process may need to be run after processing of asingle substrate 17. With the reduced particle generation of theheat shield 91 andnozzle 39, for example, 2 to 5substrates 17 can be processed with CVD deposition before a cleaning process needs to be run in thechamber 13, thereby significantly increasing the throughput of thesubstrate processing system 10. - FIG. 5 compares measured particle count in a CVD system that does not have
heat shields 91 for the nozzles and a CVDsystem having nozzles 39 and surroundingheat shields 91. TheCVD system 10 is similar to the one shown in FIGS. 1 and 2, and theheat shields 91 of FIGS. 4a, b are placed on thenozzles substrate 17. The particles included in the plot are greater than about 0.16 μm in size. The process involves gapfill of a shallow trench isolation (STI) on a 300mm silicon substrate 17 having a trench width of about 110 nm and an aspect ratio of about 4:1 by depositing a USG layer from SiH4, H2, and O2. The pressure in thechamber 13 is about 4 mTorr. - The first three experiments were conducted without the
heat shield 91. The source power levels for the top SRF generator (31A) and the side SRF generator (31B) are about 6 kW and 4 kW for the first test, about 7 kW and 4 kW for the second test, and about 7 kW and 5 kW for the third test. As shown in FIG. 5, the particle counts climb rapidly after about 80 seconds at rates that range from about 50 to about 116 particles per second. The other two experiments were conducted with theheat shield 91. The particles increase at a substantially lower rate when theheat shield 91 is used. The two tests employ top and side SRF power levels of about 6 kW and 4 kW, and about 7 kW and 5 kW, respectively. The rates of particle count increase for the two tests, respectively, are about 1 and about 5 particles per second after about 80 seconds, and are about 5 and about 9 particles per second after about 120 seconds. - It is to be understood that the above description is intended to be illustrative and not restrictive. Many embodiments will be apparent to those of skill in the art upon reviewing the above description. By way of example, the present invention may extend to other types of thermal as well as plasma deposition chambers and to other processes for processing substrates. The scope of the invention should, therefore, be determined not with reference to the above description, but instead should be determined with reference to the appended claims along with their full scope of equivalents.
Claims (20)
1. A replaceable gas nozzle that is insertable in a gas distributor ring of a substrate processing chamber and that can be shielded within the chamber, the gas nozzle comprising:
a longitudinal ceramic body having a channel to direct the flow of the gas into the chamber, the ceramic body comprising a first external thread to mate with the gas distributor ring, a second external thread to receive a heat shield, the channel comprising an inlet to receive the gas from the gas distributor ring, and a pinhole outlet at the end of the channel to release the gas into the chamber.
2. A nozzle according to claim 1 wherein the pinhole outlet has a diameter do, and wherein the distance dst between the second external thread and the pinhole outlet is about 90 do to about 140 do.
3. A nozzle according to claim 2 wherein do is from about 0.3 mm to about 0.4 mm.
4. A nozzle according to claim 2 wherein dst is from about 30 mm to about 55 mm.
5. A nozzle according to claim 1 wherein the ceramic body is composed of aluminum oxide.
6. A nozzle according to claim 1 wherein the ceramic body is composed of aluminum nitride.
7. A nozzle according to claim 1 wherein the ceramic body tapers at an angle from about 35 to about 45° to the pinhole outlet.
8. A nozzle according to claim 1 further comprising a heat shield mounted on the second external thread.
9. A heat shield for shielding a nozzle extending into a chamber to introduce a process gas into the chamber through a nozzle outlet, wherein the chamber defines a processing region therein and has a substrate support to support a substrate for processing in the chamber, the heat shield comprising:
a hollow member configured to be coupled with the nozzle and having an internal dimension sufficiently large to be disposed around at least a portion of the nozzle, the hollow member having an extension which projects distally of the nozzle outlet and which includes a heat shield opening for the process gas to flow therethrough from the nozzle outlet.
10. The heat shield of claim 3 wherein the hollow member is cylindrical and has an internal cross-section which is larger than an external cross-section of the nozzle by about an amount smaller than the thickness of the heat shield.
11. The heat shield of claim 3 wherein the hollow member comprises a ceramic material.
12. The heat shield of claim 3 wherein the extension of the heat shield is sized to project distally of the nozzle outlet by a distance of between about a radius of the nozzle and about a diameter of the nozzle.
13. A heat shield according to claim 5 wherein the ceramic material comprises aluminum oxide or aluminum nitride.
14. A heat shield according to claim 6 wherein the extension projects distally by about 5 mm to about 8 mm.
15. A shielded gas nozzle for a substrate processing chamber comprising:
(a) a longitudinal ceramic body having a channel to direct the flow of the gas into the chamber, the ceramic body comprising a first external thread to mate with the gas distributor ring, a second external thread to receive a heat shield, the channel comprising an inlet to receive the gas from the gas distributor ring, and a pinhole outlet at the end of the channel to release the gas into the chamber.
(b) a hollow member configured to be coupled with the ceramic body and having an internal dimension sufficiently large to be disposed around at least a portion of the ceramic body, the hollow member having an extension which projects distally of the pinhole outlet and which includes a heat shield opening for the process gas to flow therethrough from the pinhole outlet.
16. A nozzle according to claim 1 wherein the pinhole outlet has a diameter do, and wherein the distance dst between the second external thread and the pinhole outlet is about 90 do to about 140 do.
17. The heat shield of claim 3 wherein the hollow member is cylindrical and has an internal cross-section which is larger than an external cross-section of the ceramic body by about an amount smaller than the thickness of the hollow member.
18. The heat shield of claim 3 wherein the extension of the hollow member is sized to project distally of the pinhole outlet by a distance of between about a radius of the ceramic body and about a diameter of the ceramic body.
19. A shielded gas nozzle according to claim 1 wherein the ceramic body and hollow member are composed of aluminum oxide.
20. A shielded gas nozzle according to claim 1 wherein the ceramic body and the hollow member are composed of aluminum nitride.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/825,831 US20040231798A1 (en) | 2002-09-13 | 2004-04-16 | Gas delivery system for semiconductor processing |
TW93217006U TWM276314U (en) | 2004-04-16 | 2004-10-26 | Gas delivery system for semiconductor processing |
CN 200520004855 CN2849959Y (en) | 2004-04-16 | 2005-02-18 | Replaceable gas nozzle for semiconductor processing |
JP2005001822U JP3111544U (en) | 2004-04-16 | 2005-04-01 | Gas delivery system for semiconductor processing |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US41035302P | 2002-09-13 | 2002-09-13 | |
US10/630,989 US7141138B2 (en) | 2002-09-13 | 2003-07-28 | Gas delivery system for semiconductor processing |
US10/825,831 US20040231798A1 (en) | 2002-09-13 | 2004-04-16 | Gas delivery system for semiconductor processing |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US10/630,989 Continuation-In-Part US7141138B2 (en) | 2002-09-13 | 2003-07-28 | Gas delivery system for semiconductor processing |
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US20040231798A1 true US20040231798A1 (en) | 2004-11-25 |
Family
ID=43332695
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US10/825,831 Abandoned US20040231798A1 (en) | 2002-09-13 | 2004-04-16 | Gas delivery system for semiconductor processing |
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Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060024451A1 (en) * | 2004-07-30 | 2006-02-02 | Applied Materials Inc. | Enhanced magnetic shielding for plasma-based semiconductor processing tool |
US20060113038A1 (en) * | 2004-11-29 | 2006-06-01 | Applied Materials, Inc. | Gas distribution system for improved transient phase deposition |
WO2006065740A2 (en) * | 2004-12-17 | 2006-06-22 | Applied Materials, Inc. | Self-cooling gas delivery apparatus under high vacuum for high density plasma applications |
US20060196603A1 (en) * | 2005-03-07 | 2006-09-07 | Applied Materials, Inc. | Gas baffle and distributor for semiconductor processing chamber |
US20070175394A1 (en) * | 2006-01-27 | 2007-08-02 | Toru Inagaki | Film forming apparatus |
US20080044568A1 (en) * | 2004-02-06 | 2008-02-21 | Applied Materials, Inc. | Anti-clogging nozzle for semiconductor processing |
US20080121178A1 (en) * | 2006-11-28 | 2008-05-29 | Applied Materials, Inc. | Dual top gas feed through distributor for high density plasma chamber |
US20080121179A1 (en) * | 2006-11-28 | 2008-05-29 | Applied Materials, Inc. | Gas baffle and distributor for semiconductor processing chamber |
US20080302652A1 (en) * | 2007-06-06 | 2008-12-11 | Mks Instruments, Inc. | Particle Reduction Through Gas and Plasma Source Control |
US20090042407A1 (en) * | 2006-11-28 | 2009-02-12 | Applied Materials, Inc. | Dual Top Gas Feed Through Distributor for High Density Plasma Chamber |
US20090093129A1 (en) * | 2006-11-28 | 2009-04-09 | Applied Materials, Inc. | Gas Baffle and Distributor for Semiconductor Processing Chamber |
CN101126154B (en) * | 2006-08-15 | 2010-05-12 | 中芯国际集成电路制造(上海)有限公司 | Gas reaction system with quartz nozzle protection components and |
US20100206845A1 (en) * | 2009-02-16 | 2010-08-19 | Takahisa Hashimoto | Plasma processing apparatus and method for operating the same |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US20110126762A1 (en) * | 2007-03-29 | 2011-06-02 | Tokyo Electron Limited | Vapor deposition system |
US7981262B2 (en) | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
US20180012785A1 (en) * | 2016-07-07 | 2018-01-11 | Lam Research Corporation | Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity |
US20200185202A1 (en) * | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Component, Method Of Manufacturing The Component, And Method Of Cleaning The Component |
US10858727B2 (en) | 2016-08-19 | 2020-12-08 | Applied Materials, Inc. | High density, low stress amorphous carbon film, and process and equipment for its deposition |
US10910195B2 (en) | 2017-01-05 | 2021-02-02 | Lam Research Corporation | Substrate support with improved process uniformity |
US11342164B2 (en) * | 2011-12-16 | 2022-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | High density plasma chemical vapor deposition chamber and method of using |
Citations (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3604889A (en) * | 1969-05-08 | 1971-09-14 | North American Rockwell | Plasma-generating method and means |
US3649805A (en) * | 1969-05-08 | 1972-03-14 | North American Rockwell | Plasma generating method and means |
US3865173A (en) * | 1969-05-08 | 1975-02-11 | North American Rockwell | Art of casting metals |
US4138306A (en) * | 1976-08-31 | 1979-02-06 | Tokyo Shibaura Electric Co., Ltd. | Apparatus for the treatment of semiconductors |
US4330086A (en) * | 1980-04-30 | 1982-05-18 | Duraclean International | Nozzle and method for generating foam |
US4563367A (en) * | 1984-05-29 | 1986-01-07 | Applied Materials, Inc. | Apparatus and method for high rate deposition and etching |
US4910042A (en) * | 1987-07-30 | 1990-03-20 | Jiri Hokynar | Apparatus and method for treating material surfaces |
US4913929A (en) * | 1987-04-21 | 1990-04-03 | The Board Of Trustees Of The Leland Stanford Junior University | Thermal/microwave remote plasma multiprocessing reactor and method of use |
US4928626A (en) * | 1989-05-19 | 1990-05-29 | Applied Materials, Inc. | Reactant gas injection for IC processing |
US4988644A (en) * | 1989-05-23 | 1991-01-29 | Texas Instruments Incorporated | Method for etching semiconductor materials using a remote plasma generator |
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US5158644A (en) * | 1986-12-19 | 1992-10-27 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
US5188671A (en) * | 1990-08-08 | 1993-02-23 | Hughes Aircraft Company | Multichannel plate assembly for gas source molecular beam epitaxy |
US5248071A (en) * | 1991-06-26 | 1993-09-28 | Ray Cecil D | Re-sealable nozzle and cap assembly |
US5346579A (en) * | 1991-10-17 | 1994-09-13 | Applied Materials, Inc. | Magnetic field enhanced plasma processing chamber |
US5350480A (en) * | 1993-07-23 | 1994-09-27 | Aspect International, Inc. | Surface cleaning and conditioning using hot neutral gas beam array |
US5376166A (en) * | 1993-08-16 | 1994-12-27 | Lowndes Engineering Co., Inc. | Apparatus and method for defusing and scrubbing air streams |
US5403434A (en) * | 1994-01-06 | 1995-04-04 | Texas Instruments Incorporated | Low-temperature in-situ dry cleaning process for semiconductor wafer |
US5441568A (en) * | 1994-07-15 | 1995-08-15 | Applied Materials, Inc. | Exhaust baffle for uniform gas flow pattern |
US5522934A (en) * | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
US5522936A (en) * | 1994-09-30 | 1996-06-04 | Anelva Corporation | Thin film deposition apparatus |
US5540772A (en) * | 1988-12-27 | 1996-07-30 | Symetrix Corporation | Misted deposition apparatus for fabricating an integrated circuit |
US5567267A (en) * | 1992-11-20 | 1996-10-22 | Tokyo Electron Limited | Method of controlling temperature of susceptor |
US5592581A (en) * | 1993-07-19 | 1997-01-07 | Tokyo Electron Kabushiki Kaisha | Heat treatment apparatus |
US5614055A (en) * | 1993-08-27 | 1997-03-25 | Applied Materials, Inc. | High density plasma CVD and etching reactor |
US5620523A (en) * | 1994-04-11 | 1997-04-15 | Canon Sales Co., Inc. | Apparatus for forming film |
US5662770A (en) * | 1993-04-16 | 1997-09-02 | Micron Technology, Inc. | Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks |
US5686151A (en) * | 1993-09-14 | 1997-11-11 | Kabushiki Kaisha Toshiba | Method of forming a metal oxide film |
US5688357A (en) * | 1995-02-15 | 1997-11-18 | Applied Materials, Inc. | Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor |
US5722455A (en) * | 1995-03-06 | 1998-03-03 | Satronic Ag | Nozzle closing valve, as well as pressure atomizer nozzle having such a nozzle closing valve |
US5770098A (en) * | 1993-03-19 | 1998-06-23 | Tokyo Electron Kabushiki Kaisha | Etching process |
US5792272A (en) * | 1995-07-10 | 1998-08-11 | Watkins-Johnson Company | Plasma enhanced chemical processing reactor and method |
US5812403A (en) * | 1996-11-13 | 1998-09-22 | Applied Materials, Inc. | Methods and apparatus for cleaning surfaces in a substrate processing system |
US5844195A (en) * | 1996-11-18 | 1998-12-01 | Applied Materials, Inc. | Remote plasma source |
US5885358A (en) * | 1996-07-09 | 1999-03-23 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
US5900103A (en) * | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
US5942804A (en) * | 1994-09-26 | 1999-08-24 | Endgate Corporation | Circuit structure having a matrix of active devices |
US5954881A (en) * | 1997-01-28 | 1999-09-21 | Northrop Grumman Corporation | Ceiling arrangement for an epitaxial growth reactor |
US5994662A (en) * | 1997-05-29 | 1999-11-30 | Applied Materials, Inc. | Unique baffle to deflect remote plasma clean gases |
US6013155A (en) * | 1996-06-28 | 2000-01-11 | Lam Research Corporation | Gas injection system for plasma processing |
US6039834A (en) * | 1997-03-05 | 2000-03-21 | Applied Materials, Inc. | Apparatus and methods for upgraded substrate processing system with microwave plasma source |
US6060400A (en) * | 1998-03-26 | 2000-05-09 | The Research Foundation Of State University Of New York | Highly selective chemical dry etching of silicon nitride over silicon and silicon dioxide |
US6077357A (en) * | 1997-05-29 | 2000-06-20 | Applied Materials, Inc. | Orientless wafer processing on an electrostatic chuck |
US6083344A (en) * | 1997-05-29 | 2000-07-04 | Applied Materials, Inc. | Multi-zone RF inductively coupled source configuration |
US6111225A (en) * | 1996-02-23 | 2000-08-29 | Tokyo Electron Limited | Wafer processing apparatus with a processing vessel, upper and lower separately sealed heating vessels, and means for maintaining the vessels at predetermined pressures |
US6109206A (en) * | 1997-05-29 | 2000-08-29 | Applied Materials, Inc. | Remote plasma source for chamber cleaning |
US6125859A (en) * | 1997-03-05 | 2000-10-03 | Applied Materials, Inc. | Method for improved cleaning of substrate processing systems |
US6143078A (en) * | 1998-11-13 | 2000-11-07 | Applied Materials, Inc. | Gas distribution system for a CVD processing chamber |
US6148832A (en) * | 1998-09-02 | 2000-11-21 | Advanced Micro Devices, Inc. | Method and apparatus for in-situ cleaning of polysilicon-coated quartz furnaces |
US6170428B1 (en) * | 1996-07-15 | 2001-01-09 | Applied Materials, Inc. | Symmetric tunable inductively coupled HDP-CVD reactor |
US6189483B1 (en) * | 1997-05-29 | 2001-02-20 | Applied Materials, Inc. | Process kit |
US6217951B1 (en) * | 1995-10-23 | 2001-04-17 | Matsushita Electric Industrial Co., Ltd. | Impurity introduction method and apparatus thereof and method of manufacturing semiconductor device |
US6250250B1 (en) * | 1999-03-18 | 2001-06-26 | Yuri Maishev | Multiple-cell source of uniform plasma |
US6286451B1 (en) * | 1997-05-29 | 2001-09-11 | Applied Materials, Inc. | Dome: shape and temperature controlled surfaces |
US6403491B1 (en) * | 2000-11-01 | 2002-06-11 | Applied Materials, Inc. | Etch method using a dielectric etch chamber with expanded process window |
US20020086106A1 (en) * | 2000-11-07 | 2002-07-04 | Park Chang-Soo | Apparatus and method for thin film deposition |
US6432256B1 (en) * | 1999-02-25 | 2002-08-13 | Applied Materials, Inc. | Implanatation process for improving ceramic resistance to corrosion |
US6446572B1 (en) * | 2000-08-18 | 2002-09-10 | Tokyo Electron Limited | Embedded plasma source for plasma density improvement |
US20020127350A1 (en) * | 2001-03-07 | 2002-09-12 | Applied Materials, Inc. | High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers |
US20020150682A1 (en) * | 1999-09-01 | 2002-10-17 | Applied Materials, Inc. | Apparatus for improving barrier layer adhesion to HDP-FSG thin films |
US6486081B1 (en) * | 1998-11-13 | 2002-11-26 | Applied Materials, Inc. | Gas distribution system for a CVD processing chamber |
US20020185225A1 (en) * | 2001-05-28 | 2002-12-12 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
US20030024901A1 (en) * | 2001-01-26 | 2003-02-06 | Applied Materials, Inc. | Method of reducing plasma charge damage for plasma processes |
US20030050724A1 (en) * | 2001-09-05 | 2003-03-13 | Applied Materials, Inc. | Low-bias-deposited high-density-plasma chemical-vapor-deposition silicate glass layers |
US20030070619A1 (en) * | 2001-01-26 | 2003-04-17 | Applied Materials, Inc. | In situ wafer heat for reduced backside contamination |
US20030085205A1 (en) * | 2001-04-20 | 2003-05-08 | Applied Materials, Inc. | Multi-core transformer plasma source |
US6579811B2 (en) * | 1998-04-21 | 2003-06-17 | Applied Materials Inc. | Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps through wafer heating |
US6632726B2 (en) * | 2000-08-30 | 2003-10-14 | Applied Materials, Inc. | Film formation method and film formation apparatus |
US20030211757A1 (en) * | 2002-05-07 | 2003-11-13 | Applied Materials, Inc. | Substrate support with extended radio frequency electrode upper surface |
US20030213562A1 (en) * | 2002-05-17 | 2003-11-20 | Applied Materials, Inc. | High density plasma CVD chamber |
US20040126952A1 (en) * | 2002-09-13 | 2004-07-01 | Applied Materials, Inc. | Gas delivery system for semiconductor processing |
US20040129210A1 (en) * | 2003-01-03 | 2004-07-08 | Applied Materials, Inc. | Gas nozzle for substrate processing chamber |
US20040152341A1 (en) * | 2001-05-11 | 2004-08-05 | Applied Materials, Inc. | HDP-CVD deposition process for filling high aspect ratio gaps |
US6808567B2 (en) * | 1998-01-07 | 2004-10-26 | Tokyo Electron Limited | Gas treatment apparatus |
US20040224090A1 (en) * | 2003-05-09 | 2004-11-11 | Applied Materials, Inc. | HDP-CVD uniformity control |
US6828241B2 (en) * | 2002-01-07 | 2004-12-07 | Applied Materials, Inc. | Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source |
US6926926B2 (en) * | 2001-09-10 | 2005-08-09 | Applied Materials, Inc. | Silicon carbide deposited by high density plasma chemical-vapor deposition with bias |
US6929700B2 (en) * | 2001-05-11 | 2005-08-16 | Applied Materials, Inc. | Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD |
-
2004
- 2004-04-16 US US10/825,831 patent/US20040231798A1/en not_active Abandoned
Patent Citations (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3649805A (en) * | 1969-05-08 | 1972-03-14 | North American Rockwell | Plasma generating method and means |
US3865173A (en) * | 1969-05-08 | 1975-02-11 | North American Rockwell | Art of casting metals |
US3604889A (en) * | 1969-05-08 | 1971-09-14 | North American Rockwell | Plasma-generating method and means |
US4138306A (en) * | 1976-08-31 | 1979-02-06 | Tokyo Shibaura Electric Co., Ltd. | Apparatus for the treatment of semiconductors |
US4330086A (en) * | 1980-04-30 | 1982-05-18 | Duraclean International | Nozzle and method for generating foam |
US4563367A (en) * | 1984-05-29 | 1986-01-07 | Applied Materials, Inc. | Apparatus and method for high rate deposition and etching |
US5158644A (en) * | 1986-12-19 | 1992-10-27 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US4913929A (en) * | 1987-04-21 | 1990-04-03 | The Board Of Trustees Of The Leland Stanford Junior University | Thermal/microwave remote plasma multiprocessing reactor and method of use |
US4910042A (en) * | 1987-07-30 | 1990-03-20 | Jiri Hokynar | Apparatus and method for treating material surfaces |
US5540772A (en) * | 1988-12-27 | 1996-07-30 | Symetrix Corporation | Misted deposition apparatus for fabricating an integrated circuit |
US4928626A (en) * | 1989-05-19 | 1990-05-29 | Applied Materials, Inc. | Reactant gas injection for IC processing |
US4988644A (en) * | 1989-05-23 | 1991-01-29 | Texas Instruments Incorporated | Method for etching semiconductor materials using a remote plasma generator |
US5188671A (en) * | 1990-08-08 | 1993-02-23 | Hughes Aircraft Company | Multichannel plate assembly for gas source molecular beam epitaxy |
US5248071A (en) * | 1991-06-26 | 1993-09-28 | Ray Cecil D | Re-sealable nozzle and cap assembly |
US5346579A (en) * | 1991-10-17 | 1994-09-13 | Applied Materials, Inc. | Magnetic field enhanced plasma processing chamber |
US5567267A (en) * | 1992-11-20 | 1996-10-22 | Tokyo Electron Limited | Method of controlling temperature of susceptor |
US5770098A (en) * | 1993-03-19 | 1998-06-23 | Tokyo Electron Kabushiki Kaisha | Etching process |
US5662770A (en) * | 1993-04-16 | 1997-09-02 | Micron Technology, Inc. | Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks |
US5592581A (en) * | 1993-07-19 | 1997-01-07 | Tokyo Electron Kabushiki Kaisha | Heat treatment apparatus |
US5350480A (en) * | 1993-07-23 | 1994-09-27 | Aspect International, Inc. | Surface cleaning and conditioning using hot neutral gas beam array |
US5376166A (en) * | 1993-08-16 | 1994-12-27 | Lowndes Engineering Co., Inc. | Apparatus and method for defusing and scrubbing air streams |
US5614055A (en) * | 1993-08-27 | 1997-03-25 | Applied Materials, Inc. | High density plasma CVD and etching reactor |
US5686151A (en) * | 1993-09-14 | 1997-11-11 | Kabushiki Kaisha Toshiba | Method of forming a metal oxide film |
US5403434A (en) * | 1994-01-06 | 1995-04-04 | Texas Instruments Incorporated | Low-temperature in-situ dry cleaning process for semiconductor wafer |
US5620523A (en) * | 1994-04-11 | 1997-04-15 | Canon Sales Co., Inc. | Apparatus for forming film |
US5900103A (en) * | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
US6106737A (en) * | 1994-04-20 | 2000-08-22 | Tokyo Electron Limited | Plasma treatment method utilizing an amplitude-modulated high frequency power |
US5522934A (en) * | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
US5441568A (en) * | 1994-07-15 | 1995-08-15 | Applied Materials, Inc. | Exhaust baffle for uniform gas flow pattern |
US5942804A (en) * | 1994-09-26 | 1999-08-24 | Endgate Corporation | Circuit structure having a matrix of active devices |
US5522936A (en) * | 1994-09-30 | 1996-06-04 | Anelva Corporation | Thin film deposition apparatus |
US5688357A (en) * | 1995-02-15 | 1997-11-18 | Applied Materials, Inc. | Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor |
US5722455A (en) * | 1995-03-06 | 1998-03-03 | Satronic Ag | Nozzle closing valve, as well as pressure atomizer nozzle having such a nozzle closing valve |
US5792272A (en) * | 1995-07-10 | 1998-08-11 | Watkins-Johnson Company | Plasma enhanced chemical processing reactor and method |
US6375750B1 (en) * | 1995-07-10 | 2002-04-23 | Applied Materials, Inc. | Plasma enhanced chemical processing reactor and method |
US6178918B1 (en) * | 1995-07-10 | 2001-01-30 | Applied Materials, Inc. | Plasma enhanced chemical processing reactor |
US6217951B1 (en) * | 1995-10-23 | 2001-04-17 | Matsushita Electric Industrial Co., Ltd. | Impurity introduction method and apparatus thereof and method of manufacturing semiconductor device |
US6111225A (en) * | 1996-02-23 | 2000-08-29 | Tokyo Electron Limited | Wafer processing apparatus with a processing vessel, upper and lower separately sealed heating vessels, and means for maintaining the vessels at predetermined pressures |
US6013155A (en) * | 1996-06-28 | 2000-01-11 | Lam Research Corporation | Gas injection system for plasma processing |
US5885358A (en) * | 1996-07-09 | 1999-03-23 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
US6182602B1 (en) * | 1996-07-15 | 2001-02-06 | Applied Materials, Inc. | Inductively coupled HDP-CVD reactor |
US6170428B1 (en) * | 1996-07-15 | 2001-01-09 | Applied Materials, Inc. | Symmetric tunable inductively coupled HDP-CVD reactor |
US5812403A (en) * | 1996-11-13 | 1998-09-22 | Applied Materials, Inc. | Methods and apparatus for cleaning surfaces in a substrate processing system |
US5844195A (en) * | 1996-11-18 | 1998-12-01 | Applied Materials, Inc. | Remote plasma source |
US5954881A (en) * | 1997-01-28 | 1999-09-21 | Northrop Grumman Corporation | Ceiling arrangement for an epitaxial growth reactor |
US6125859A (en) * | 1997-03-05 | 2000-10-03 | Applied Materials, Inc. | Method for improved cleaning of substrate processing systems |
US6039834A (en) * | 1997-03-05 | 2000-03-21 | Applied Materials, Inc. | Apparatus and methods for upgraded substrate processing system with microwave plasma source |
US6286451B1 (en) * | 1997-05-29 | 2001-09-11 | Applied Materials, Inc. | Dome: shape and temperature controlled surfaces |
US5994662A (en) * | 1997-05-29 | 1999-11-30 | Applied Materials, Inc. | Unique baffle to deflect remote plasma clean gases |
US6083344A (en) * | 1997-05-29 | 2000-07-04 | Applied Materials, Inc. | Multi-zone RF inductively coupled source configuration |
US6077357A (en) * | 1997-05-29 | 2000-06-20 | Applied Materials, Inc. | Orientless wafer processing on an electrostatic chuck |
US6109206A (en) * | 1997-05-29 | 2000-08-29 | Applied Materials, Inc. | Remote plasma source for chamber cleaning |
US6189483B1 (en) * | 1997-05-29 | 2001-02-20 | Applied Materials, Inc. | Process kit |
US20020000198A1 (en) * | 1997-05-29 | 2002-01-03 | Applied Materials, Inc. | The dome: shape and temperature controlled surfaces |
US6808567B2 (en) * | 1998-01-07 | 2004-10-26 | Tokyo Electron Limited | Gas treatment apparatus |
US6060400A (en) * | 1998-03-26 | 2000-05-09 | The Research Foundation Of State University Of New York | Highly selective chemical dry etching of silicon nitride over silicon and silicon dioxide |
US6579811B2 (en) * | 1998-04-21 | 2003-06-17 | Applied Materials Inc. | Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps through wafer heating |
US6148832A (en) * | 1998-09-02 | 2000-11-21 | Advanced Micro Devices, Inc. | Method and apparatus for in-situ cleaning of polysilicon-coated quartz furnaces |
US6143078A (en) * | 1998-11-13 | 2000-11-07 | Applied Materials, Inc. | Gas distribution system for a CVD processing chamber |
US6486081B1 (en) * | 1998-11-13 | 2002-11-26 | Applied Materials, Inc. | Gas distribution system for a CVD processing chamber |
US6432256B1 (en) * | 1999-02-25 | 2002-08-13 | Applied Materials, Inc. | Implanatation process for improving ceramic resistance to corrosion |
US6250250B1 (en) * | 1999-03-18 | 2001-06-26 | Yuri Maishev | Multiple-cell source of uniform plasma |
US20020150682A1 (en) * | 1999-09-01 | 2002-10-17 | Applied Materials, Inc. | Apparatus for improving barrier layer adhesion to HDP-FSG thin films |
US6803325B2 (en) * | 1999-09-01 | 2004-10-12 | Applied Materials Inc. | Apparatus for improving barrier layer adhesion to HDP-FSG thin films |
US6446572B1 (en) * | 2000-08-18 | 2002-09-10 | Tokyo Electron Limited | Embedded plasma source for plasma density improvement |
US6632726B2 (en) * | 2000-08-30 | 2003-10-14 | Applied Materials, Inc. | Film formation method and film formation apparatus |
US6403491B1 (en) * | 2000-11-01 | 2002-06-11 | Applied Materials, Inc. | Etch method using a dielectric etch chamber with expanded process window |
US20020086106A1 (en) * | 2000-11-07 | 2002-07-04 | Park Chang-Soo | Apparatus and method for thin film deposition |
US20030070619A1 (en) * | 2001-01-26 | 2003-04-17 | Applied Materials, Inc. | In situ wafer heat for reduced backside contamination |
US20030024901A1 (en) * | 2001-01-26 | 2003-02-06 | Applied Materials, Inc. | Method of reducing plasma charge damage for plasma processes |
US6660662B2 (en) * | 2001-01-26 | 2003-12-09 | Applied Materials, Inc. | Method of reducing plasma charge damage for plasma processes |
US6704913B2 (en) * | 2001-01-26 | 2004-03-09 | Applied Materials Inc. | In situ wafer heat for reduced backside contamination |
US20020127350A1 (en) * | 2001-03-07 | 2002-09-12 | Applied Materials, Inc. | High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers |
US20030085205A1 (en) * | 2001-04-20 | 2003-05-08 | Applied Materials, Inc. | Multi-core transformer plasma source |
US20040226512A1 (en) * | 2001-04-20 | 2004-11-18 | Applied Materials, Inc. | Multi-core transformer plasma source |
US20040182517A1 (en) * | 2001-04-20 | 2004-09-23 | Applied Materials, Inc. | Multi-core transformer plasma source |
US20040185610A1 (en) * | 2001-04-20 | 2004-09-23 | Applied Materials, Inc. | Multi-core transformer plasma source |
US20040152341A1 (en) * | 2001-05-11 | 2004-08-05 | Applied Materials, Inc. | HDP-CVD deposition process for filling high aspect ratio gaps |
US6929700B2 (en) * | 2001-05-11 | 2005-08-16 | Applied Materials, Inc. | Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD |
US6914016B2 (en) * | 2001-05-11 | 2005-07-05 | Applied Materials, Inc. | HDP-CVD deposition process for filling high aspect ratio gaps |
US6869499B2 (en) * | 2001-05-28 | 2005-03-22 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
US20020185225A1 (en) * | 2001-05-28 | 2002-12-12 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
US20030050724A1 (en) * | 2001-09-05 | 2003-03-13 | Applied Materials, Inc. | Low-bias-deposited high-density-plasma chemical-vapor-deposition silicate glass layers |
US6926926B2 (en) * | 2001-09-10 | 2005-08-09 | Applied Materials, Inc. | Silicon carbide deposited by high density plasma chemical-vapor deposition with bias |
US6828241B2 (en) * | 2002-01-07 | 2004-12-07 | Applied Materials, Inc. | Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source |
US6682603B2 (en) * | 2002-05-07 | 2004-01-27 | Applied Materials Inc. | Substrate support with extended radio frequency electrode upper surface |
US20030211757A1 (en) * | 2002-05-07 | 2003-11-13 | Applied Materials, Inc. | Substrate support with extended radio frequency electrode upper surface |
US20030213562A1 (en) * | 2002-05-17 | 2003-11-20 | Applied Materials, Inc. | High density plasma CVD chamber |
US20040126952A1 (en) * | 2002-09-13 | 2004-07-01 | Applied Materials, Inc. | Gas delivery system for semiconductor processing |
US20040129210A1 (en) * | 2003-01-03 | 2004-07-08 | Applied Materials, Inc. | Gas nozzle for substrate processing chamber |
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US20040224090A1 (en) * | 2003-05-09 | 2004-11-11 | Applied Materials, Inc. | HDP-CVD uniformity control |
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