US20040229460A1 - Surface treatment of metal interconnect lines - Google Patents
Surface treatment of metal interconnect lines Download PDFInfo
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- US20040229460A1 US20040229460A1 US10/439,358 US43935803A US2004229460A1 US 20040229460 A1 US20040229460 A1 US 20040229460A1 US 43935803 A US43935803 A US 43935803A US 2004229460 A1 US2004229460 A1 US 2004229460A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76858—After-treatment introducing at least one additional element into the layer by diffusing alloying elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
Definitions
- the present invention relates generally to the use of a capping layer over conductors formed by a Damascene etch scheme, and more particularly to the use of forming an alloy layer comprised of metal from the metal conductors deposited by the Damascene process and a second metal formed over the conductors or leads.
- barrier layer between the copper used for conductors and leads and the dielectric material of a semiconductor device.
- Typical barrier layers may be formed of Ta (tantalum), TaN (tantalum nitride), Ti (titanium), TiN (titanium nitride) and various combinations of these metals as well as other metal.
- the barrier layer is typically formed on the bottom and sidewalls of the trenches and vias of the copper interconnects to prevent the copper from diffusing into the surrounding silicon dioxide as other dielectric material.
- a layer of silicon nitride is then typically deposited as a cover layer over the complete structure including the conductor areas and the dielectric layer before another layer or level of dielectric structure is deposited.
- silicon nitride adheres poorly to copper and may peel away thereby creating poor interface properties including a path for copper to diffuse into the subsequent or cover layer of dielectric material. The same path may also allow moisture and contaminants to diffuse from outside into the copper so as to form porous copper oxide.
- the '950 patent also teaches a second embodiment that does not selectively deposit a second metal but does include a heat treatment although at a greater temperature than the present invention.
- a paper by T. Saito, et al., in proceedings of the IITC in 2001 at pages 15-17 teaches a self aligned metal capping process for Copper damascene interconnect.
- a Tungsten capping layer is selectively formed on the Cu interconnect using the preferential deposition phenomenon of W-CVD assisted by pre and post treatment. This technology is applied to 0.2 ⁇ m bipolar-CMOS LSI with multilevel Cu interconnects, and then yield, reliability and operation speed are evaluated.
- the present invention discloses methods and apparatus for forming a semiconductor structure comprising a first layer comprised of conductive regions such as copper or other metal interconnect lines and non-conductive regions such as a silicon dioxide dielectric or other non-conductive materials.
- a layer of a second metal that is different from the metal of the conductive regions is formed or deposited on the conductive region such as by a electrochemical deposition process including electroless plating.
- the electroless plating may be carried out by placing the substrate with the conductive and non-conductive region into a electroless plating chemical bath comprised of a metal ion chelate (such as a Ni (nickel ion chelate), a reduction agent such as sodium hypophosphite or Hydrazine and, if necessary, one or more agents or additives such as the accelerator sodium adipate, etc.
- a metal ion chelate such as a Ni (nickel ion chelate)
- a reduction agent such as sodium hypophosphite or Hydrazine
- agents or additives such as the accelerator sodium adipate, etc.
- the substrate including the layer of a first metal formed as the conductive region and the second metal of the cover layer interact to form an alloy such as for example, a copper/nickel (Cu/Ni) alloy.
- Cu/Ni copper/nickel
- the surface of the second Cu/Ni layer is then cleaned by one or more various cleaning processes well known by those skilled in
- FIG. 1 is a prior art illustration of a semiconductor structure comprising a substrate covered by conductive regions and non-conductive regions;
- FIG. 2A is an enlarged view of conductive regions of FIG. 1;
- FIG. 2B illustrates the view of FIG. 1 after a second metal has been formed over the conductive regions according to the teachings of this invention
- FIG. 2C illustrates the structure of FIG. 2B after heating the semiconductive structure so as to cause the metal of the conductive regions and the second metal to react with each other to form an alloy
- FIG. 2D illustrates an alternate embodiment of FIG. 2C wherein the thickness of the second metal layer was greater than the depth of the copper ion migration such that there is an alloy layer and a top layer of the second metal.
- FIG. 1 there is shown a typical semiconductor structure including a substrate 10 having a first layer of non-conductive regions 12 and conductive or interconnect regions 14 .
- substrate 10 as used herein may simply be a silicon wafer or alternately may represent one or more layers of various semiconductor devices including interconnecting metalization layers.
- substrate is intended to be broadly interpreted.
- the substrate 10 may be comprised of a dielectric layer similar to the non-conductive regions 12 of FIG. 1.
- the use of the Damascene process and the use of copper as the interconnecting layers has created new problems while at the same time solving other problems.
- the copper may diffuse into the surrounding non-conductive or substrate areas if steps are not taken to prevent such diffusion.
- a barrier layer 16 which stops or hinders the diffusion of the copper ions from the copper interconnecting strip 14 into the surrounding non-conductive portions or regions 12 and the substrate 10 .
- Suitable barrier layers are well known in the art and include, for example only, Ta (tantalum), TaN (tantalum nitride), Ti (titanium) and TiN (titanium nitride) and various combinations of these and other materials.
- this barrier layer 16 when this barrier layer 16 is provided, diffusion of the copper into the surrounding materials is slowed if not substantially eliminated.
- the silicon nitride does not adhere well to the copper interconnect line which will typically have been subjected to CMP.
- the conductive layer such as a layer of copper may include rough areas with pockets such as pocket 18 and/or dish areas such as dish area 20 .
- the layer of silicon nitride may peel away leaving no barrier between the copper and the subsequent dielectric layer.
- the barrier of silicon nitride when the barrier of silicon nitride is absent, the copper ions will readily diffuse into the cover layer of a dielectric thereby often causing electrical shorts.
- a second metal or layer of metal material is deposited over the metal interconnect or copper line 14 such as by electrochemical depositing a metal capping layer which will adhere only to the conductive regions or copper interconnect lines.
- an electroless plating process such as ECD (Electroless Chemical Deposition) may be used which includes providing a solution of NiCH 2 , GH 2 O or NiSO 4 , GH 2 O.
- an electrolyte solution or chemical bath may be used which includes a metal ion chelate such as for example a nickel ion chelate in the form of EDTA (elhylenediamine tetra-acetic acid) or a citric acid solution, a reduction agent such as for example Sodium Hypophosphite (Na(H 2 PO 2 ) H 2 O) or Hydrazine, and one or more additives. It may be desirable to use several additives for different purposes. For example, sodium adipate may be used as an accelerator, thiourea as a stabilizer, sodium carbonate or ammonia as a pH adjustor and ABS-Na as a brightener.
- a metal ion chelate such as for example a nickel ion chelate in the form of EDTA (elhylenediamine tetra-acetic acid) or a citric acid solution
- a reduction agent such as for example Sodium Hypophosphite (Na(
- a second metal such as nickel
- a second layer 22 of the second metal is formed over the copper interconnect lines 14 .
- the combined semiconductor structure of the substrate, the layer of non-conductive region (or dielectric) and conductive regions (copper interconnect lines), and the second metal capping layer 22 formed of another metal different from copper, such as for example nickel, is then subjected to a heat treatment such as a sintering temperature of between 300° and 400° C. This heat treatment will cause an inter reaction between the two metals such as for example the copper and interconnect lines 14 and the deposited nickel 22 to form an alloy layer 22 a of the two metals or Cu/Ni.
- the resulting alloy layer 22 a will have improved adhesion with respect to a subsequent dielectric layer and excellent adhering qualities with respect to the copper interconnect line 14 thereby eliminating the tendency of the silicon nitride to peel and further reducing the reliability problems.
- Other metals suitable for use as the metal capping layer include Co (cobalt) and Pd (palladium).
- the structure is then preferably cleaned by a standard post CMP cleaning process.
- the second metal layer is thick enough, or the heat treatment is of too short a duration, the copper ion migration into the second metal layer, (such as nickel), may not reach the top portions of the layer so that the top portion is comprised substantially of nickel alone without copper ions.
- the combined structure will comprise the copper interconnect lines 14 , an alloy layer 22 a and a second metal layer 22 such as shown in FIG. 2D.
Abstract
Description
- The present invention relates generally to the use of a capping layer over conductors formed by a Damascene etch scheme, and more particularly to the use of forming an alloy layer comprised of metal from the metal conductors deposited by the Damascene process and a second metal formed over the conductors or leads.
- As is well known by those skilled in the art, a continuing goal in manufacturing and production of semiconductors is a reduction in size of components and circuits with the concurrent result of an increase in the number of circuits and/or circuit elements such as transistors, capacitors, etc., on a single semiconductor device. This relentless and successful reduction in size of the circuit elements has also required reduction in the size of the conductive lines connecting devices and circuits. However, as the conducting lines are designed to be smaller and smaller, the resistance of the interconnects increases. Further, as the number of dielectric layers increases, the capacitive coupling between lines on the same level and adjacent level increases.
- In the past, aluminum was used as the metal interconnect lines and silicon oxide as the dielectric. However, newer manufacturing techniques now favor copper as the metal for interconnect lines and various low K materials (organic and inorganic) are favored as the dielectric material. Not surprisingly, these material changes have required changes in the processing methods. In particular, because of the difficulty of etching copper without also causing unacceptable damage to the dielectric material, the technique of forming the metal interconnect lines has experienced significant changes. Namely, whereas aluminum interconnects could be formed by depositing a layer of aluminum and then using photoresist, lithography, and etching to leave a desired pattern of aluminum lines, the formation of copper interconnect lines are typically formed by a process now commonly referred to as a Damascene process. The Damascene process is almost the reverse of etching, and simply stated a trench, canal or via is cut, etched or otherwise formed in the underlying dielectric and is then filled with metal (i.e., copper).
- Unfortunately, although copper has the advantages discussed above, it readily diffuses into dielectric material used in the manufacture of semiconductor devices, and it diffuses especially easily into silicon dioxide. Diffusion of copper into the dielectric materials of a semiconductor deice can cause serious reliability problems including electrical shorts. Therefore, it is typical to form a barrier layer between the copper used for conductors and leads and the dielectric material of a semiconductor device. Typical barrier layers may be formed of Ta (tantalum), TaN (tantalum nitride), Ti (titanium), TiN (titanium nitride) and various combinations of these metals as well as other metal. The barrier layer is typically formed on the bottom and sidewalls of the trenches and vias of the copper interconnects to prevent the copper from diffusing into the surrounding silicon dioxide as other dielectric material. A layer of silicon nitride is then typically deposited as a cover layer over the complete structure including the conductor areas and the dielectric layer before another layer or level of dielectric structure is deposited.
- Unfortunately, silicon nitride adheres poorly to copper and may peel away thereby creating poor interface properties including a path for copper to diffuse into the subsequent or cover layer of dielectric material. The same path may also allow moisture and contaminants to diffuse from outside into the copper so as to form porous copper oxide.
- Various ones of the above-mentioned problems have been addressed by the prior art, but none of the known prior art provides a solution to all of the problems in the simple and elegant method provided by the present invention. For example, U.S. Pat. No. 5,380,546, entitled “Multilevel Metallization Process for Electronic Components” and issued to Krishnan, et al., teaches the use of tungsten as both a barrier layer and a capping layer, but does not teach the unique method of forming an alloy as taught by the present invention. U.S. Pat. No. 6,130,157, entitled “Method to Form an Encapsulation Layer Over Copper Interconnects” issued to Liu, et al., teaches the use of several metals as a barrier layer and “treats” a tungsten capping layer with a nitrogen plasma, but does not teach nickel as the capping layer or simply heating to form an alloy as taught by the method of the present invention. U.S. Pat. No. 6,261,950, entitled “Self-Aligned Metal Caps for Interlevel Metal Connections” issued to Tobben, et al., does not teach the use of a barrier layer and teaches a first embodiment that selectively deposits a capping layer, but does not teach forming an alloy. The '950 patent also teaches a second embodiment that does not selectively deposit a second metal but does include a heat treatment although at a greater temperature than the present invention. A paper by T. Saito, et al., in proceedings of the IITC in 2001 at pages 15-17 teaches a self aligned metal capping process for Copper damascene interconnect. A Tungsten capping layer is selectively formed on the Cu interconnect using the preferential deposition phenomenon of W-CVD assisted by pre and post treatment. This technology is applied to 0.2 μm bipolar-CMOS LSI with multilevel Cu interconnects, and then yield, reliability and operation speed are evaluated.
- These and other problems are generally solved or circumvented, and technical advantages are generally achieved, by the present invention which discloses methods and apparatus for forming a semiconductor structure comprising a first layer comprised of conductive regions such as copper or other metal interconnect lines and non-conductive regions such as a silicon dioxide dielectric or other non-conductive materials. A layer of a second metal that is different from the metal of the conductive regions is formed or deposited on the conductive region such as by a electrochemical deposition process including electroless plating. The electroless plating may be carried out by placing the substrate with the conductive and non-conductive region into a electroless plating chemical bath comprised of a metal ion chelate (such as a Ni (nickel ion chelate), a reduction agent such as sodium hypophosphite or Hydrazine and, if necessary, one or more agents or additives such as the accelerator sodium adipate, etc. The substrate including the layer of a first metal formed as the conductive region and the second metal of the cover layer interact to form an alloy such as for example, a copper/nickel (Cu/Ni) alloy. The surface of the second Cu/Ni layer is then cleaned by one or more various cleaning processes well known by those skilled in the art.
- For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawing, in which:
- FIG. 1 is a prior art illustration of a semiconductor structure comprising a substrate covered by conductive regions and non-conductive regions;
- FIG. 2A is an enlarged view of conductive regions of FIG. 1;
- FIG. 2B illustrates the view of FIG. 1 after a second metal has been formed over the conductive regions according to the teachings of this invention;
- FIG. 2C illustrates the structure of FIG. 2B after heating the semiconductive structure so as to cause the metal of the conductive regions and the second metal to react with each other to form an alloy; and
- FIG. 2D illustrates an alternate embodiment of FIG. 2C wherein the thickness of the second metal layer was greater than the depth of the copper ion migration such that there is an alloy layer and a top layer of the second metal.
- Referring now to FIG. 1, there is shown a typical semiconductor structure including a
substrate 10 having a first layer ofnon-conductive regions 12 and conductive orinterconnect regions 14. It should be appreciated that theterm substrate 10 as used herein may simply be a silicon wafer or alternately may represent one or more layers of various semiconductor devices including interconnecting metalization layers. Thus, the term substrate is intended to be broadly interpreted. For example, typically thesubstrate 10 may be comprised of a dielectric layer similar to thenon-conductive regions 12 of FIG. 1. - As is well known by those skilled in the art, the use of the Damascene process and the use of copper as the interconnecting layers has created new problems while at the same time solving other problems. For example, when the conducting or interconnecting lines are made of copper, the copper may diffuse into the surrounding non-conductive or substrate areas if steps are not taken to prevent such diffusion. Thus, as shown in FIG. 1 there is also included a
barrier layer 16, which stops or hinders the diffusion of the copper ions from thecopper interconnecting strip 14 into the surrounding non-conductive portions orregions 12 and thesubstrate 10. Suitable barrier layers are well known in the art and include, for example only, Ta (tantalum), TaN (tantalum nitride), Ti (titanium) and TiN (titanium nitride) and various combinations of these and other materials. Thus, when thisbarrier layer 16 is provided, diffusion of the copper into the surrounding materials is slowed if not substantially eliminated. Further, it is typical to include a cover layer over thenon-conductive regions 12 and theconductive regions 14 of a material such as silicon nitride if still another layer of semiconductor devices is to be formed over thefirst layer pocket 18 and/or dish areas such asdish area 20. Thus, because of the poor adhesion qualities between the copper and the protective layer of silicon nitride, it is not uncommon for serious reliability problems to occur. For example, the layer of silicon nitride (not shown) may peel away leaving no barrier between the copper and the subsequent dielectric layer. Of course as will be appreciated by those skilled in the art, when the barrier of silicon nitride is absent, the copper ions will readily diffuse into the cover layer of a dielectric thereby often causing electrical shorts. - Referring now to FIG. 2A, there is illustrated an enlarged view of the conductive region or
copper interconnect line 14 prior to the processes of the present invention. Therefore, according to the invention a second metal or layer of metal material is deposited over the metal interconnect orcopper line 14 such as by electrochemical depositing a metal capping layer which will adhere only to the conductive regions or copper interconnect lines. To form the second layer of metal which adheres to the conductive regions or copper interconnect lines, an electroless plating process, such as ECD (Electroless Chemical Deposition) may be used which includes providing a solution of NiCH2, GH2O or NiSO4, GH2O. According to another embodiment, an electrolyte solution or chemical bath may be used which includes a metal ion chelate such as for example a nickel ion chelate in the form of EDTA (elhylenediamine tetra-acetic acid) or a citric acid solution, a reduction agent such as for example Sodium Hypophosphite (Na(H2PO2) H2O) or Hydrazine, and one or more additives. It may be desirable to use several additives for different purposes. For example, sodium adipate may be used as an accelerator, thiourea as a stabilizer, sodium carbonate or ammonia as a pH adjustor and ABS-Na as a brightener. Thus, by using the ECD process or an electrolyte solution for electroless depositing, a second metal, such as nickel, onto the surface of thecopper interconnect lines 14, asecond layer 22 of the second metal is formed over the copper interconnect lines 14. The combined semiconductor structure of the substrate, the layer of non-conductive region (or dielectric) and conductive regions (copper interconnect lines), and the secondmetal capping layer 22 formed of another metal different from copper, such as for example nickel, is then subjected to a heat treatment such as a sintering temperature of between 300° and 400° C. This heat treatment will cause an inter reaction between the two metals such as for example the copper andinterconnect lines 14 and the depositednickel 22 to form an alloy layer 22 a of the two metals or Cu/Ni. The resulting alloy layer 22 a will have improved adhesion with respect to a subsequent dielectric layer and excellent adhering qualities with respect to thecopper interconnect line 14 thereby eliminating the tendency of the silicon nitride to peel and further reducing the reliability problems. Other metals suitable for use as the metal capping layer include Co (cobalt) and Pd (palladium). The structure is then preferably cleaned by a standard post CMP cleaning process. - If the second metal layer is thick enough, or the heat treatment is of too short a duration, the copper ion migration into the second metal layer, (such as nickel), may not reach the top portions of the layer so that the top portion is comprised substantially of nickel alone without copper ions. In this situation, the combined structure will comprise the
copper interconnect lines 14, an alloy layer 22 a and asecond metal layer 22 such as shown in FIG. 2D. - Although the present invention and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims. For example, it will be readily understood by those skilled in the art that dimensions and layer thickness may be varied while remaining within the scope of the present invention.
- Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present invention, processes, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present invention. Accordingly, the appended claims are intended to include within their scope such processes, methods, or steps.
Claims (35)
Priority Applications (6)
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US10/439,358 US6955984B2 (en) | 2003-05-16 | 2003-05-16 | Surface treatment of metal interconnect lines |
TW092130119A TWI317766B (en) | 2003-05-16 | 2003-10-29 | Method of electroless plating for copper leads |
SG200306497A SG122792A1 (en) | 2003-05-16 | 2003-11-04 | Surface treatment of metal interconnect lines |
CNB2003101142618A CN1321439C (en) | 2003-05-16 | 2003-11-06 | Electroless plating method for copper wire |
CNU2004200590373U CN2770096Y (en) | 2003-05-16 | 2004-05-17 | Semiconductor substrate structure |
US11/213,238 US8053894B2 (en) | 2003-05-16 | 2005-08-26 | Surface treatment of metal interconnect lines |
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US7816256B2 (en) * | 2006-07-17 | 2010-10-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process for improving the reliability of interconnect structures and resulting structure |
US8823176B2 (en) | 2008-10-08 | 2014-09-02 | International Business Machines Corporation | Discontinuous/non-uniform metal cap structure and process for interconnect integration |
MY156085A (en) * | 2009-09-08 | 2016-01-15 | Sumitomo Bakelite Co | Semiconductor device |
US8492274B2 (en) | 2011-11-07 | 2013-07-23 | International Business Machines Corporation | Metal alloy cap integration |
US20130112462A1 (en) * | 2011-11-07 | 2013-05-09 | International Business Machines Corporation | Metal Alloy Cap Integration |
US10304700B2 (en) | 2015-10-20 | 2019-05-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
US11801077B2 (en) | 2022-03-14 | 2023-10-31 | Orthotek, LLC. | Bone fixation system |
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- 2003-11-04 SG SG200306497A patent/SG122792A1/en unknown
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Publication number | Publication date |
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TWI317766B (en) | 2009-12-01 |
US6955984B2 (en) | 2005-10-18 |
CN1321439C (en) | 2007-06-13 |
US20060001160A1 (en) | 2006-01-05 |
CN2770096Y (en) | 2006-04-05 |
TW200426244A (en) | 2004-12-01 |
CN1551301A (en) | 2004-12-01 |
SG122792A1 (en) | 2006-06-29 |
US8053894B2 (en) | 2011-11-08 |
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