US20040104448A1 - Integrated circuit with a strongly-conductive buried layer - Google Patents
Integrated circuit with a strongly-conductive buried layer Download PDFInfo
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- US20040104448A1 US20040104448A1 US10/678,954 US67895403A US2004104448A1 US 20040104448 A1 US20040104448 A1 US 20040104448A1 US 67895403 A US67895403 A US 67895403A US 2004104448 A1 US2004104448 A1 US 2004104448A1
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- 239000000463 material Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000000407 epitaxy Methods 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 7
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
An integrated circuit including a buried layer of determined conductivity type in a plane substantially parallel to the plane of a main circuit surface, in which the median portion of this buried layer is filled with a metal-type material.
Description
- 1. Field of the Invention
- The present invention relates to the field of semiconductor integrated circuits. More specifically, the present invention relates to improving the conductivity of a buried layer.
- The present invention will more specifically be described in the context of the forming of a buried collector layer of a bipolar transistor, but those skilled in the art will realize from reading the present application and as underlined at the end of the present description, that the present invention applies generally to the formation of deep strongly-conductive layers in a semiconductor substrate.
- 2. Discussion of the Related Art
- FIG. 1 very schematically shows a bipolar transistor structure formed in a semiconductor substrate. This bipolar transistor is, in the specific described embodiment, formed in an N-
type layer 1 formed by epitaxy on a P-type substrate 2. Under the active area where the transistor is to be formed, an implantation intended to form a heavily-doped N-type buriedlayer 3 will have been formed, generally prior to the epitaxy. The active transistor area is laterally delimited by a silicon oxide well 5 etched into the surface ofepitaxial layer 1, currently designated as an STI, for Shallow Trench Insulation. Inside of the active area are formed a P-type base region 7 and an N-type emitter region 8. Many methods are known to form such regions in properly localized fashion and to take contacts on these regions. Reference will, for example, be made to U.S. Pat. No. 5,953,600 which is incorporated herein by reference. The transistor collector is formed of a portion of epitaxial layer I and of anarea 9 also of type N implanted opposite to the emitter. The collector is contacted by an N+-type buriedlayer 3 and by an N+-type conductive well 10 crossing the insulating well 5 and joining the buriedlayer 3. - When such a transistor is to be operated at a high frequency, one of the main limiting parameters appears to be the collector access resistance, that is, the sum of lateral resistance R1 of buried
layer 3 and of vertical resistance R2 of collector well 10. - Various solutions are known to minimize the resistance of collector well10, by strongly increasing the doping level, by reducing its height, or by forming an opening and filling it with polysilicon and/or other strongly-conductive materials. Thus, the main element of the collector access resistance remains resistance R1 of buried
layer 3. Further, the doping of this layer cannot be increased to a maximum, especially since it exhibits risks of exodiffusion to the epitaxial layer and of creation of a ghost layer during epitaxy. - It should further be noted that buried
layer 3 has a dual function. On the one hand, it ensures a contact withcollector region - An object of the present invention is to increase the conductivity of a buried layer while maintaining its double function of contact and junction isolation with respect to the substrate.
- Another object of the present invention is to provide various methods to obtain such a buried layer with an improved conductivity.
- Another more specific object of the present invention is to form the buried collector layer and the associated contact for a bipolar transistor.
- To achieve these and other objects, the present invention provides an integrated circuit comprising a buried layer of determined conductivity type in a plane substantially parallel to the plane of a main circuit surface, in which the median portion of this buried layer is filled with a metal-type material.
- According to an embodiment of the present invention, the buried layer is a sub-collector layer of a bipolar transistor.
- According to an embodiment of the present invention, the metal-type material is titanium nitride.
- The present invention also provides a method for forming a buried layer in a semiconductor substrate of an integrated circuit, comprising the steps of providing, at the location where the buried layer is desired to be formed, a layer portion made of a material selectively etchable with respect to the rest of the semiconductor material, doping the semiconductor substrate according to a selected conductivity type on either side of said layer portion, digging an opening extending from the integrated circuit surface to said layer portion, removing said layer portion by isotropic etch, and filling the cavity thus formed with a metal-type material.
- According to an embodiment of the present invention, the layer portion is delimited by an insulating wall.
- According to an embodiment of the present invention, the layer portion is a silicon-germanium region formed by epitaxy on a silicon substrate and itself covered with a silicon epitaxial layer.
- According to an embodiment of the present invention, the layer portion is a silicon oxide region, formed on a silicon substrate and coated with a silicon layer.
- According to an embodiment of the present invention, the layer portion is a hollowed region formed in advance in the semiconductor substrate.
- The foregoing objects, features and advantages of the present invention will be discussed in detail in the following non-limiting description of specific embodiments in connection with the accompanying drawings.
- FIG. 1, previously described, is a simplified cross-section view of a bipolar transistor according to the state of the art;
- FIG. 2 is a simplified cross-section view of a bipolar transistor provided with a buried layer according to the present invention;
- FIGS. 3A to3D are cross-section views illustrating successive steps of a first manufacturing mode of a transistor according to the present invention;
- FIGS. 4A to4C are cross-section views illustrating successive steps of a second manufacturing mode of a transistor according to the present invention; and
- FIGS. 5A and 5B are cross-section views illustrating successive steps of a third embodiment of a transistor according to the present invention.
- FIG. 2 shows a bipolar transistor comprising a modified buried layer according to the present invention. Buried
layer 3 is replaced with a buriedlayer 13 having as itsperiphery 14, like buriedlayer 3 of FIG. 1, a heavily-doped silicon layer of the desired conductivity type. However, the core of this buried layer is replaced with a strongly-conductive layer 15, preferably a metal-type layer.Collector well 10 is preferably filled with thesame material 15 as that forming the core of buriedlayer 13. The conductive material is for example copper deposited by electrochemical deposition or any other strongly-conductive material adapted to filling a cavity such as a conductive oxide, a metal silicide, or a titanium or tantalum nitride, or another material exhibiting the same features.Material 15 may also comprise at its periphery a metal, or another strongly-conductive material such as a nitride or a silicide, and have a core of another nature, for example, polysilicon or even silicon oxide. - According to the present invention, given that most of the conductivity of the buried layer is ensured by
metal core 15, peripheral heavily-dopedarea 14 may be less heavily doped than buriedlayer 3 of prior art. Indeed, it is enough for this layer to exhibit a good ohmic contact withmetal core 15. Risks of exodiffusion to the upper epitaxial layer during epitaxy and of creation of a ghost layer are thus limited. - The forming of epitaxial layers with metal-type cores according to the present invention enables reducing, by a factor of at least10, the value of resistance R1 exhibited in relation with FIG. 1, and enables reducing the doping of
peripheral region 14, which simplifies the manufacturing. Especially, ifperipheral region 14 is less heavily doped than in prior art, the size of the extension of the doped region during anneals decreases, which further improves the device. - Three embodiments of a buried layer according to the present invention will now be described as examples only.
- Substrate Comprising an SiGe Layer
- FIGS. 3A to3D illustrate four successive steps of a first example of manufacturing of a buried layer according to the present invention.
- As illustrated in FIG. 3A, the process starts from a P-
type silicon substrate 20 on which a silicon-germanium layer (SiGe) 21 has been formed by epitaxy. Onlayer 21 is formed by epitaxy an N-type silicon layer 22. At least the portion which will correspond to the active area of the component which is desired to be manufactured is surrounded with N+ regions 23 and 24. This can, for example, be obtained by heavily doping the SiGe during its epitaxial growth, the N+ region then forming by diffusion in the silicon during the subsequent thermal steps. An implantation after growth of the SiGe, or a deep implantation after forming ofepitaxial layer 22, may also be performed. These implantations are preferably localized, only under the active region. Preferably still, a heavily-doped N-type layer, a germanium-silicon layer, a heavily-doped N-type silicon layer, and a lightly-doped N-type layer may be successively grown; the use of successive epitaxies especially enables reducing anneals. - Then, as illustrated in FIG. 3B, the usual steps of the forming of a bipolar transistor, similar to those mentioned in relation with FIG. 1, are also carried out. However, in this case, a deep insulating wall, deeper than
SiGe layer 21, designated byreference numeral 26, has also been formed in addition to shallow insulating well 5. A first advantage of such an insulating wall is to avoid, for heavily-doped N-type regions, laterally diffusing towards neighboring components in the various anneals. The insulating walls are not necessarily completely filled with an insulator, but possibly only their outer walls are coated with an insulator, the rest being filled with polysilicon, which is often easier to deposit. The same elements as those described in relation with FIG. 1 are then formed, that is, the layers and base andemitter contacts collector implantation 9. - At the step illustrated in FIG. 3C, an
opening 28 is made inwell 5, this opening extending to joinSiGe layer 21. It should be noted that in practice, there generally exist upper insulating layers above the structure, resulting from the emitter and base region manufacturing processes. Thus, opening 28 will also cross these insulating layers not shown.Opening 28 has been shown as slightly penetrating into the SiGe layer. In practice, a first vertical anisotropic etch of well 5 followed by a second vertical anisotropic etch of the silicon ofepitaxial layer 22 will be performed, to reachSiGe region 21. - At the step illustrated in FIG. 3D, an isotropic etch by a product selectively etching the SiGe is performed to completely remove the portion of SiGe layer delimited by
wall 26 and form a cavity at the location which was taken up by this layer portion. Isotropic SiGe plasma etch methods are known, which exhibit a selectivity greater than 30 between the SiGe etching and the silicon and silicon oxide etching. Finally, titanium nitride (TiN) 29 which fills the cavity thus created or at least coats its internal walls is finally deposited by chemical vapor deposition (CVD), or by atomic deposition processes currently called ALD in the art. Normally, an almost complete filling byTiN 29 appears to have been performed, as shown in FIG. 3D. For this filling, one of the other previously-mentioned conductive materials could also be used. - SOI-Type Substrate
- FIGS. 4A to4C illustrate successive steps of a second example of manufacturing of a buried layer according to the present invention.
- As illustrated in FIG. 4A, the process starts from an SOI-type structure, comprising a
substrate 30, for example of P-type silicon, asilicon oxide layer 31, and an epitaxial lightly-doped N-type silicon layer 32.Oxide layer 31 is surrounded with heavily-doped N-type regions - Then, steps similar to those described in relation with FIG. 3B are carried out to obtain the structure shown in FIG. 4B.
- After this, as illustrated in FIG. 4C, an
opening 38 is formed, which extends to reachsilicon oxide layer 31. Preferably, as shown in FIG. 4B, the region whereopening 38 will be formed is a reserved silicon portion inside ofoxide well 5. Then, as illustrated in FIG. 4C, opening 38 does not reach the edges of well 5 but is entirely formed in the silicon. This has the advantage that, at the next step during which the siliconoxide layer portion 21 delimited bywall 26 is etched, the walls of well 5 are not simultaneously etched. In this case also, deepperipheral walls 26 will preferably exhibit an outer surface coated with silicon nitride to avoid etching of these walls at the same time as of SiO2 region 31. In a last phase, opening 38 and the cavity provided in the layer portion of SiO2 delimited bywalls 26 are filled with a conductive material, as described in the context of the first example. - Substrate with a Pre-Formed Cavity
- A silicon structure comprising in a substrate40 a
cavity 41 may also be used, as shown in FIG. 5A. Such acavity 41 may be formed by etching into the upper substrate surface close narrow grooves and by performing a high-temperature anneal. A cavity then forms substantially at the location of the groove bottom and the upper silicon surface obturates again. Doping processings are then performed so thatlayer 42 above the cavity is lightly N-type doped if the substrate is P-type doped. - Then, a heavily-doped N-type region is formed on either side of the cavity and the process carries on in the same way as described previously by first forming the elements of a transistor, then boring an
opening 48 which will joincavity 41. This cavity is then filled, for example, by TiN as described previously. To form the heavily-doped N regions around the cavity, it is possible, prior to the cavity filing, to diffuse an N-type doping, for example, from polysilicon. - Of course, the present invention is likely to have various alterations, modifications, and improvements which will readily occur to those skilled in the art, especially as concerns the choice of the filling materials and the etch modes. The basic idea of the present invention is to create an inhomogeneous layer portion with respect to the polysilicon at the location where a buried layer is desired to be formed and, after having formed a port to this inhomogeneous region, to re-etch this region to form a void therein, which is then filled with a very conductive material. In the context of the first two manufacturing examples, the layer portion is a portion of a continuous layer delimited by a continuous peripheral wall. It could also be provided that, before epitaxy of the upper layer, a layer portion having the desired contour, for example, a basin, etched in the substrate, is directly formed.
- Further, the present invention has been described only in the context of the forming of the collector of an NPN-type transistor. It will of course apply to the forming of a collector of a PNP-type bipolar transistor. It will more generally apply to the forming of a buried layer with a very high conductivity level everywhere such a layer may be useful. The present invention especially applies in the context of submicronic structures in which, for example, the active surface area delimited by deep insulating
wall 26 has a dimension on the order of 0.8×1.4 μm2 and in which the layer thicknesses have values on the order of one tenth of a micrometer. - It should also be noted that the buried layer according to the present invention is not only a good electric conductor, but also a good heat conductor. Thus, a specific advantage of the present invention is that the heat dissipation of the device arranged above the buried layer is improved. The upper structure of the collector well may be optimized to improve this heat dissipation.
- Such alterations, modifications, and improvements are intended to be part of this disclosure, and are intended to be within the spirit and the scope of the present invention. Accordingly, the foregoing description is by way of example only and is not intended to be limiting. The present invention is limited only as defined in the following claims and the equivalents thereto.
Claims (8)
1. An integrated circuit comprising a buried layer of determined conductivity type in a plane substantially parallel to the plane of a main circuit surface, wherein a median portion of said buried layer is filled with a metal-type material.
2. The integrated circuit of claim 1 , wherein the buried layer is a sub-collector layer of a bipolar transistor.
3. The integrated circuit of claim 1 , wherein the metal-type material is titanium nitride.
4. A method for forming a buried layer in a semiconductor substrate of an integrated circuit, comprising the steps of:
providing, at the location where the buried layer is to be formed, a layer portion made of a material selectively etchable with respect to the rest of the semiconductor material,
doping the semiconductor substrate according to a chosen conductivity type on either side of said layer portion,
digging an opening extending from the integrated circuit surface to said layer portion,
removing said layer portion by isotropic etch, and
filling the cavity thus formed with a metal-type material.
5. The method of claim 4 , wherein the layer portion is delimited by an insulating wall.
6. The method of claim 4 , wherein the layer portion is a silicon-germanium region formed by epitaxy on a silicon substrate and itself covered with a silicon epitaxial layer.
7. The method of claim 4 , wherein the layer portion is a silicon oxide region, formed on a silicon substrate and coated with a silicon layer.
8. The method of claim 4 , wherein the layer portion is a hollowed region formed in advance in the semiconductor substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US11/123,318 US7456071B2 (en) | 2002-10-03 | 2005-05-06 | Method for forming a strongly-conductive buried layer in a semiconductor substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR02/12278 | 2002-10-03 | ||
FR0212278A FR2845522A1 (en) | 2002-10-03 | 2002-10-03 | INTEGRATED HIGHLY CONDUCTIVE LAYER CIRCUIT |
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US11/123,318 Division US7456071B2 (en) | 2002-10-03 | 2005-05-06 | Method for forming a strongly-conductive buried layer in a semiconductor substrate |
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US10/678,954 Abandoned US20040104448A1 (en) | 2002-10-03 | 2003-10-03 | Integrated circuit with a strongly-conductive buried layer |
US11/123,318 Expired - Lifetime US7456071B2 (en) | 2002-10-03 | 2005-05-06 | Method for forming a strongly-conductive buried layer in a semiconductor substrate |
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US11/123,318 Expired - Lifetime US7456071B2 (en) | 2002-10-03 | 2005-05-06 | Method for forming a strongly-conductive buried layer in a semiconductor substrate |
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US (2) | US20040104448A1 (en) |
EP (1) | EP1406307A1 (en) |
JP (1) | JP2004274023A (en) |
KR (1) | KR20040031634A (en) |
FR (1) | FR2845522A1 (en) |
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US20050258424A1 (en) * | 2004-03-10 | 2005-11-24 | Bernard Sautreuil | Integrated capacitor |
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WO2006077502A1 (en) * | 2005-01-18 | 2006-07-27 | Nxp B.V. | Bipolar transistor and method of fabricating the same |
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US20060281031A1 (en) * | 2005-06-09 | 2006-12-14 | Stmicroelectronics (Crolles 2) Sas | Production of two superposed elements within an integrated electronic circuit |
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US20080233688A1 (en) * | 2005-04-29 | 2008-09-25 | Nxp B.V. | Method of Fabricating a Bipolar Transistor |
US20100003800A1 (en) * | 2007-01-05 | 2010-01-07 | International Business Machines Corporation | Bipolar transistor with silicided sub-collector |
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US10796942B2 (en) * | 2018-08-20 | 2020-10-06 | Stmicroelectronics S.R.L. | Semiconductor structure with partially embedded insulation region |
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US8026575B2 (en) | 2006-02-09 | 2011-09-27 | Renesas Electronics Corporation | Semiconductor device, electronic device, and manufacturing method of the same |
US20090302375A1 (en) * | 2006-07-24 | 2009-12-10 | Nxp B.V. | Method of manufacturing a semiconductor device and device manufactured by the method |
WO2008012737A3 (en) * | 2006-07-24 | 2008-04-10 | Nxp Bv | Method of manufacturing a semiconductor device and a device manufactured by the method |
US20100003800A1 (en) * | 2007-01-05 | 2010-01-07 | International Business Machines Corporation | Bipolar transistor with silicided sub-collector |
US8003473B2 (en) * | 2007-01-05 | 2011-08-23 | International Business Machines Corporation | Bipolar transistor with silicided sub-collector |
US10553675B2 (en) | 2016-10-18 | 2020-02-04 | Infineon Technologies Ag | Isolation of semiconductor device with buried cavity |
Also Published As
Publication number | Publication date |
---|---|
FR2845522A1 (en) | 2004-04-09 |
EP1406307A1 (en) | 2004-04-07 |
US7456071B2 (en) | 2008-11-25 |
US20050191818A1 (en) | 2005-09-01 |
KR20040031634A (en) | 2004-04-13 |
JP2004274023A (en) | 2004-09-30 |
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