US20030010641A1 - Method and apparatus for encapsulation of an edge of a substrate during an electro-chemical deposition process - Google Patents
Method and apparatus for encapsulation of an edge of a substrate during an electro-chemical deposition process Download PDFInfo
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- US20030010641A1 US20030010641A1 US10/061,126 US6112602A US2003010641A1 US 20030010641 A1 US20030010641 A1 US 20030010641A1 US 6112602 A US6112602 A US 6112602A US 2003010641 A1 US2003010641 A1 US 2003010641A1
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- conductive body
- contact pin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/004—Sealing devices
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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Abstract
An electro-chemical deposition apparatus and method of fabricating the same is generally provided. In one embodiment, the apparatus includes an annular conductive body adapted to support a substrate and at least one electrical contact pin adapted to electrically bias the substrate. The electrical contact pin has a portion that is brazed into a pin receiving pocket formed in the conductive body. A method of fabricating a contact ring utilized for substrate plating includes the steps of inserting a portion of at least one contact pin in a pin receiving pocket formed in an annular conductive body to form an assembly and brazing the contact pin to the conductive body in a manner that excludes gases between the inserted portion of the contact pin and the pin receiving pocket.
Description
- This application is a continuation-in-part of co-pending U.S. patent application Ser. No. 09/905,513, filed Jul. 13, 2001 and herein incorporated by reference.
- 1. Field of the Invention
- Embodiments of the invention generally relate to a method and apparatus for electro-chemical deposition of a conductive material on a substrate.
- 2. Background of the Related Art
- Sub-quarter micron, multi-level metallization is one of the key technologies for the next generation of ultra large scale integration (ULSI). The multilevel interconnects that lie at the heart of this technology require planarization of interconnect features formed in high aspect ratio apertures, including vias, contacts, lines, plugs and other features. Reliable formation of these interconnect features is very important to the success of ULSI and to the continued effort to increase circuit density and quality on individual substrates and die.
- As circuit densities increase, the widths of vias, contacts, lines, plugs and other features, as well as the dielectric materials between them, decrease to less than 250 nanometers, whereas the thickness of the dielectric layers remains substantially constant, with the result that the aspect ratios for the features, i.e., their height divided by width, increases. Due to copper's good electrical performance at such small feature sizes, copper has become a preferred metal for filling sub-quarter micron, high aspect ratio interconnect features on substrates. However, many traditional deposition processes, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), have difficulty filling structures with copper material where the aspect ratio exceeds 4:1, and particularly where it exceeds 10:1. As a result of these process limitations, electroplating, which had previously been limited to the fabrication of lines on circuit boards, is now being used to fill vias and contacts on semiconductor devices.
- Metal electroplating is generally known and can be achieved by a variety of techniques. A typical method generally comprises deposition of a barrier layer over the feature surfaces, followed by deposition of a conductive metal seed layer, preferably copper, over the barrier layer, and then electroplating a conductive metal over the seed layer to fill the structure/feature. After electroplating, the deposited layers and the dielectric layers are planarized, such as by chemical mechanical polishing, to define a conductive interconnect feature.
- While present day electroplating cells achieve acceptable results on larger scale substrates, a number of obstacles impair consistent reliable electroplating onto substrates having micron-sized, high aspect ratio features. Generally, these obstacles include providing uniform power distribution and current density across the substrate plating surface to form a metal layer having uniform thickness and preventing unwanted edge and backside deposition to minimize and control contamination of the substrate being processed as well as subsequent substrates. For example, the electrical contacts between the substrate and the deposition system are often exposed to the plating fluid (e.g., electrolyte) and subsequently become contaminated with deposition material or other contaminants that reduce the contact area between the substrate and contacts. The reduced or irregular contact area disrupts uniform biasing of the substrate that results in non-uniform plating.
- Moreover, the position of the contacts relative to the center of the substrate may additionally create non-uniform power distribution over the substrate. Thus, cell tooling for positioning the contacts relative to the substrate must have tight tolerances to ensure proper centering of the substrates. Tight tolerance requirements are generally undesirable due to the increase in part, assembly and quality assurance costs.
- Therefore, there is a need for an improved electro-chemical deposition system.
- In one aspect of the invention, an electro-chemical deposition apparatus is generally provided. In one embodiment, the apparatus includes an annular conductive body that is adapted to support a substrate and at least one electrical contact pin adapted to electrically bias the substrate. The electrical contact pin has a portion that is brazed into a pin receiving pocket formed in the conductive body.
- In another embodiment, an apparatus for electro-chemical deposition on a substrate includes an annular conductive body having at least one electrical contact pin brazed in a pin receiving pocket formed in a conductive body. A first seal is disposed inward of the electrical contact pin and provides a seal with a conductive body.
- In another embodiment, an apparatus for electro-chemical deposition on a substrate includes an annular conductive body that supports a substrate and is at least partially encapsulated by a dielectric covering. At least one electrical contact pin is brazed to a substrate receiving pocket formed in the conductive body. The contact pin has an exposed portion extending from the conductive body and has a contact surface free of the dielectric covering.
- In another aspect of the invention, a method for fabricating a contact ring utilized for substrate plating includes the steps of inserting a portion of at least one contact pin in a pin receiving pocket formed in an annular conductive body to form an assembly, and brazing the contact pin to the conductive body in a manner that excludes gases between the inserted portion of the contact pin and the pin receiving pocket.
- In another embodiment, a method for fabricating a contact ring utilized for substrate plating includes the steps of inserting a portion of at least one contact pin in a pin receiving pocket formed in an annular conductive body to form an assembly, brazing the contact pin to the conductive body in a manner that excludes gases between the inserted portion of the contact pin and the pin receiving pocket and shaping an exposed portion of the contact pins to a common elevation relative to the conductive body.
- In yet another embodiment, a method of fabricating a contact ring utilized for substrate plating includes the steps of inserting a portion of at least one contact pin and a pin receiving pocket formed in an annular conductive body to form an assembly, brazing the contact pin to the conductive body in a manner that excludes gases between the inserted portion of the contact pin and the pin receiving pocket, stress relieving the contact pin and the conductive body assembly by holding the assembly at a first temperature, flowing braze between the contact pin and the conductive body by elevating the temperature of the assembly from the first temperature to a second temperature and shaping the exposed portion of the contact pin to a common elevation relative to the conductive body.
- So that the manner in which the above recited features and advantages of the invention are attained can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings.
- It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
- FIG. 1 is a cross sectional view of an electroplating process cell400 according to the invention;
- FIG. 2 is a partial cross sectional perspective view of one embodiment of a cathode contact ring;
- FIG. 3 is a partial sectional view of the cathode contact ring of FIG. 2;
- FIG. 4 is a partial cross sectional perspective view of one embodiment of a thrust plate;
- FIGS. 5 and 6 are cross sectional views of the cathode contact ring and thrust plate engaging a substrate;
- FIG. 7 is a partial cross sectional perspective view of another embodiment of a cathode contact ring;
- FIG. 8 is a partial cross sectional perspective view of a substrate illustrating an exclusion zone relative to a notch;
- FIG. 9 is a sectional view of the exclusion zone taken along section line9-9 of FIG. 8.
- FIG. 10 is a partial cross sectional perspective view of another embodiment of a cathode contact ring;
- FIGS.11A-B are a partial cross sectional perspective views of alternative embodiments of cathode contact rings;
- FIG. 12 is a perspective view of one embodiment of a contact strip;
- FIG. 13 is a perspective view of another embodiment of a contact strip;
- FIG. 14 is a perspective view of another embodiment of a contact strip; and
- FIG. 15 is a partial cross sectional perspective view of another embodiment of a cathode contact ring.
- To facilitate understanding, identical reference numerals have been used, wherever possible, to designate identical elements that are common to the figures.
- FIG. 1 is a cross sectional view of an
electroplating process cell 100 according to the invention. Theprocessing cell 100 generally comprises ahead assembly 110, aprocess kit 120 and anelectrolyte collector 140. Preferably, theelectrolyte collector 140 is secured onto thebase 142 over anopening 144 that defines the location for placement of theprocess kit 120. Theelectrolyte collector 140 includes aninner wall 146, anouter wall 148 and abottom 147 connecting thewalls electrolyte outlet 149 is disposed through thebottom 147 of theelectrolyte collector 140 and connected to an electrolyte replenishingsystem 132 through tubes, hoses, pipes or other fluid transfer connectors. - The
head assembly 110 is mounted onto ahead assembly frame 152. Thehead assembly frame 152 includes a mountingpost 154 and acantilever arm 156. The mountingpost 154 is mounted onto thebase 142 of theelectroplating process cell 100, and thecantilever arm 156 extends laterally from an upper portion of the mountingpost 154. Preferably, the mountingpost 154 provides rotational movement with respect to a vertical axis along the mounting post to allow rotation of thehead assembly 110. Thehead assembly 110 is attached to a mountingplate 160 disposed at the distal end of thecantilever arm 156. The lower end of thecantilever arm 156 is connected to acantilever arm actuator 157, such as a pneumatic cylinder, mounted on the mountingpost 154. Thecantilever arm actuator 157 provides pivotal movement of thecantilever arm 156 with respect to the joint between thecantilever arm 156 and the mountingpost 154. When thecantilever arm actuator 157 is retracted, thecantilever arm 156 moves thehead assembly 110 away from theprocess kit 120 to provide the spacing required to remove and/or replace theprocess kit 120 from theelectroplating process cell 100. When thecantilever arm actuator 157 is extended, thecantilever arm 156 moves thehead assembly 110 axially toward theprocess kit 120 to position the substrate in thehead assembly 110 in a processing position. - The
head assembly 110 generally comprises asubstrate holder assembly 150 and asubstrate assembly actuator 158. Thesubstrate assembly actuator 158 is mounted onto the mountingplate 160, and includes ahead assembly shaft 162 extending downwardly through the mountingplate 160. The lower end of thehead assembly shaft 162 is connected to thesubstrate holder assembly 150 to position thesubstrate holder assembly 150 in a processing position and in a substrate loading position. - The
substrate assembly actuator 158 additionally may be configured to provide rotary motion to thehead assembly 110. The rotation of the substrate during the electroplating process generally enhances the deposition results. Preferably, thehead assembly 110 is rotated between about 2 rpm and about 20 rpm during the electroplating process. Thehead assembly 110 can also be rotated as thehead assembly 100 is lowered to position the substrate in contact with the electrolyte in the process cell as well as when thehead assembly 110 is raised to remove the substrate from the electrolyte in the process cell. Thehead assembly 110 is preferably rotated at a high speed (i.e., >20 rpm) after thehead assembly 110 is lifted from the process cell to enhance removal of residual electrolyte on thehead assembly 110 and substrate. - The
substrate holder assembly 150 generally comprises athrust plate 164 and acathode contact ring 166 that are suspended from ahanger plate 136. Thehanger plate 136 is coupled to thehead assembly shaft 162. Thecathode contact ring 166 is coupled to thehanger plate 136 by hanger pins 138. The hanger pins 138 allows thecathode contact ring 166 when mated with theweir 178, to move to closer to thehanger plate 136, thus allowing the substrate held by thethrust plate 164 to be sandwiched between thehanger plate 136 and thrustplate 164 for processing. - FIG. 2 is a cross sectional view of one embodiment of a
cathode contact ring 166. In general, thecontact ring 166 comprises an annular body having a plurality of conducting members disposed thereon. The annular body is constructed of an insulating material to electrically isolate the plurality of conducting members. Together the body and conducting members form a diametrically interior substrate seating surface which, during processing, supports a substrate and provides a current thereto. - The
contact ring 166 generally comprises a plurality of conductingmembers 265 at least partially disposed within an annularinsulative body 270. Theinsulative body 270 is shown having aflange 262 and a downwardsloping shoulder portion 264 leading to anupper portion 266 of aninner ring surface 268. Theinsulative body 270 generally comprises a ceramic, plastic or other substantially rigid, electrically insulating material. For example, thebody 270 may be comprised of alumina (Al2O3), polyvinylidenefluoride (PVDF), perfluoroalkoxy resin (PFA), fluoropolymers like TEFLON®, and TEFZEL®, and similar materials. - The conducting
members 265 are defined by a plurality of outerelectrical contact pads 280 annularly disposed on theflange 262, a plurality of innerelectrical contact pads 272 extending inward from theshoulder 264, and a plurality of embedded conductingconnectors 276 which link thepads members 265 are isolated from one another by theinsulative body 270. Theouter contact pads 280 are coupled to a power supply (not shown) to deliver current and voltage to theinner contact pads 272 via theconnectors 276 during processing. Theinner contact pads 272 supply the current and voltage to a substrate by maintaining contact around a peripheral portion of the substrate. Thus, in operation the conductingmembers 265 act as discrete current paths electrically connected to a substrate. - The conducting
members 265 typically comprise copper (Cu), platinum (Pt), tantalum (Ta), titanium (Ti), gold (Au), silver (Ag), stainless steel or other conducting materials. Alternatively, the conductingmembers 265 may be comprised of a base material coated with a conducting material. For example, the conductingmembers 265 may be made of copper base and be coated with platinum. Alternatively, coatings such as tantalum nitride, titanium nitride, rhodium, gold, copper or silver on a conductive base material such as stainless steel, molybdenum, copper and titanium may be used. Optionally, theinner contact pads 272 may comprise a material resistant to oxidation such as platinum, gold, silver or other noble metal. Further, since thecontact pads connectors 276, thecontact pads members 265 one of the same or yet another material. Either or both of thepads connectors 276 may be coated with a conducting material. - In addition to being a function of the contact material, the total resistance of each circuit is dependent on the geometry, or shape, of the
inner contact pads 272 and the force supplied by thecontact ring 166. These factors define a constriction resistance, RCR, at the interface of theinner contact pads 272 and theinner ring surface 268 due to asperities between the two surfaces. Generally, as the applied force is increased the apparent area is also increased. The apparent area is, in turn, inversely related to RCR so that an increase in the apparent area results in a decreased RCR. Thus, to minimize overall resistance it is preferable to maximize force. The maximum force applied in operation is limited by the yield strength of a substrate which may be damaged under excessive force and resulting pressure. However, because pressure is related to both force and area, the maximum sustainable force is also dependent on the geometry of theinner contact pads 272. Thus, while thecontact pads 272 may have a flat upper surface as in FIG. 2, other shapes may be used to advantage. For example, knife-edge and hemispherical contact pads may be utilized. A person skilled in the art will readily recognize other shapes that may be used to advantage. A more complete discussion of the relation between contact geometry, force, and resistance is given in Ney Contact Manual, by Kenneth E. Pitney, The J. M. Ney Company, 1973, which is hereby incorporated by reference in its entirety. - The number of
connectors 276 may be varied depending on the particular number and size ofcontact pads 272 desired. For example, acontact ring 166 configured to process a 200 mm substrate may include up to 36contact pads 272 spaced equally around the ring. However, more or asingle contact pad 272 which may circumscribe thecontact ring 166 may also be utilized. - FIG. 3 depicts a sectional view of one embodiment of a
contact ring 166 illustrating theinner contact pad 272 extending inward from theshoulder 264. Generally, thecontact ring 166 includes asupport flange 302 that extends radially inward from theshoulder 264 below theinner contact pads 272 to a lower portion of theinner ring surface 268. Thesupport flange 302 supports theinner contact pad 272 and maintains planarity of acontact surface 304 of theinner contact pad 272 while the substrate is seated thereon during processing. Additionally, thesupport flange 302 includes arecess 308 disposed on abottom surface 306 and/orinner ring surface 268 of thecontact ring 166. - The
recess 308 is configured to accept aclamp ring 310 that retains afirst seal 318 to thecontact ring 166. Theclamp ring 310 may be an integral part of thecontact ring 166, or be comprised of a material compatible with the plating fluid. In one embodiment, theclamp ring 310 is fastened to thecontact ring 166 by a plurality ofscrews 312 threaded into a threadedhole 314 in theinsulative body 270. Theclamp ring 310 includes anupturned member 316 that defines a seal-receivinggroove 330 between theupturned member 316 and thesupport flange 302. - The
first seal 318 generally is configured to provide a fluid seal between thebody 270 of thecontact ring 166 and the substrate when the substrate is disposed on the inner contact pad 272 (see line 332). Thefirst seal 318 is generally comprised of a material compatible with the plating fluid and having a durometer that effectively seals against the substrate without stressing or damaging the substrate's surface. An example of one suitable seal material is ethylene propylene diene terpolymer (EDPM). - The
first seal 318 may include a variety sealing means such as gaskets, o-rings, lip seals, cup seals, lobed rings and other types of fluid seals. Thefirst seal 318 may include a variety of profiles, including circular, square, lip-seals or other shapes. In one embodiment, thefirst seal 318 includes a base 322 having alip 324 extending therefrom. Thebase 322 is generally annular in form and is configured to be retained by the seal-receivinggroove 330. Optionally, an undercut 320 may be disposed in thesupport flange 302. Thebase 322 of thefirst seal 318 may be configured with a diameter that interfaces with the undercut 320 formed in thesupport flange 302 to secure theseal 318 to theflange 302. Thelip 324 includes afirst sealing surface 326 and asecond sealing surface 328. Thefirst sealing surface 326 is generally disposed on thelip 324 opposite thebase 322 and provides a seal between the substrate and thefirst seal 318. Thesecond sealing surface 328 is generally disposed on the radially outer portion of thelip 324 and contacts theinner contact pad 272 and/or theinner ring surface 268 of thesupport flange 302 when thelip 324 is compressed toline 332 by the substrate seated on thecontact pad 272. Additionally or in the alternative, thebase 322 may provide a seal between thefirst seal 318 andinsulative body 270. - The
lip 324 of thefirst seal 318, in a non-compressed or “free” state, generally extends radially inward of thebase 322. Thelip 324 extends from thebase 322 and tapers to thefirst sealing surface 326. The shape of thefirst seal 318 generally allows thelip 324 to move radially inwards when compressed and to return to its original configuration relative to the base 322 as the force upon theseal 318 is removed as further described below. - The
inner ring surface 268 and thecontact surface 304 of theinner contact pad 272 generally define asubstrate receiving pocket 240. The receivingpocket 240 is generally configured to locate the surface relative to thecontact ring 166 and assure the entire perimeter of the substrate make electrical contact with thecontact ring 166 during processing. - FIG. 4 depicts one embodiment of the
thrust plate 164. Thethrust plate 164 is generally cylindrical in form and includes atop surface 402 and abottom surface 404. Thethrust plate 164 is generally comprised or coated with a material compatible with the plating fluid. - A
perimeter 406 of thethrust plate 162 generally includes a groove or notch 408 that is adapted to receive asecond seal 410. Thesecond seal 410 generally provides a fluid seal between thethrust plate 162 and theflange 262 of thecontact ring 166. Thesecond seal 410 may include a variety sealing means such as gaskets, o-rings, lip seals, cup seals, lobed rings and other types of fluid seals, and may have a variety of profiles, including circular, square, lip-seals or other shapes. Thesecond seal 410 is generally comprised of a material compatible with the plating fluid and has a durometer that effectively seals against thecontact ring 166. An example of one suitable seal material is ethylene propylene diene terpolymer (EDPM). - In the embodiment depicted in FIG. 4, the
second seal 410 includes abase 412 and alip 414. Thebase 412 is generally disposed in thenotch 408. Thelip 414 typically extends from the base 412 downwards and radially outwards. Thelip 414 is configured to seal against theflange 262 of thecontact ring 166 and, as such, is disposed radially outward of the intersection of theflange 262 andshoulder 264 of thecontact ring 166. Generally, thesecond seal 410 is configured similar to thefirst seal 318. - The
bottom 404 of thethrust plate 164 generally includes aport 416 and a groove or notch 418. Theport 416 is coupled to a fitting 420 disposed in thetop surface 402 of thethrust plate 164. The fitting 420 is coupled by asupply tube 424 to a fluid source (not shown) that supplies pressure or vacuum to retain and dechuck the substrate from thebottom surface 404 of thethrust plate 164. - The
notch 418 is generally adapted to receive athird seal 422. Thethird seal 422 is adapted to contact the substrate to facilitate vacuum chucking of the substrate. Thethird seal 422 generally extends beyond the bottom 404 in its un-compressed state and it typically comprises of a material compatible with the plating fluid and of a durometer that promotes sealing with the substrate while minimizing stress and damage to the substrate. Thethird seal 422 may include a variety sealing means such as gaskets, o-rings, lip seals, cup seals, lobed rings and other types of fluid seals. The profile of thethird seal 422 may vary as discussed relative to the first andsecond seals - In the embodiment depicted in FIG. 4, the
third seal 422 includes abase 426 and alip 428. Thebase 426 is generally disposed in thenotch 418. Thelip 428, in a non-compressed or “free” state, typically extends from the base 426 downwards and radially outwards. Thelip 428 is configured to seal against the substrate inward of the edge of the substrate or locating indicia (i.e., flat or notch disposed therein) to prevent plating fluid from entering the region between theseals lip 428 is configured to contact the substrate radially outward of thecontact surface 320 of the inner contact pad. Generally, thethird seal 422 is configured similar to thefirst seal 318 and/orsecond seal 410. - FIGS. 5 and 6 depict the
head assembly 110 in one mode of operation. Referring to FIG. 5, asubstrate 502 is disposed adjacent thethrust plate 164 and in contact with thethird seal 422. At least a partial vacuum is drawn in aplenum 504 defined between thethrust plate 164 andsubstrate 502 to chuck or retain the substrate to thethrust plate 164. Thehead assembly 110 is moved towards thecontact ring 166. As thesubstrate 502 nears thecontact ring 166, the substrate sealingly contacts thelip 324 of thefirst seal 318 at thefirst sealing surface 326. Thefirst seal 318 is deformed as thesubstrate 502 moves closer to thecontact pads 272 disposed on thecontact ring 166. The deformation of thefirst seal 318 causes thelip 324 to move downward and outward. The outward movement of thelip 324 causes asecond sealing surface 328 to sealingly contact the inner diameter of theflange 302. - As the
thrust plate 164 continues to move towards thecontact ring 166, thesecond seal 410 sealingly engages thecontact plate 166 as shown in FIG. 6. The substrate is now sandwiched between thefirst seal 318 andthird seal 422 which respectively define inner boundaries of anexclusion zone 604. Thesecond seal 410 defines an outer boundary of theexclusion zone 604. Thus, as the plating fluid is disposed on theplating surface 602 of thesubstrate 502, an edge 606 of thesubstrate 502 which is encapsulated by theexclusion zone 604 is isolated from contact with the plating fluid. As thecontact pads 272 are disposed within theexclusion zone 604, contamination of thecontact pads 272 by the plating fluid and deposition build-up thereon is substantially eliminated, thus extending plating uniformity and extending the service life of thecontact ring 166. Additionally, the compression offirst seal 318 assists in releasing the substrate from thecontact ring 166 after deposition. - FIG. 7 depicts another embodiment of a
contact ring 700. Generally, thecontact ring 700 is comprised of aconductive body 702 that is at least partially encapsulated by an insulatingcovering 704. Theconductive body 702 is typically a metal such as copper, stainless steel, aluminum or other metal. The insulatingcovering 704 is typically a ceramic or plastic, for example, fluoropolymers, polyethylene or polyimide. - Generally, the
conductive body 702 includes atop surface 760, abottom surface 762, anouter diameter 764 and aninner diameter 766. Thetop surface 760 includes aflange 710 and asubstrate seating surface 714 coupled between ashoulder 712. Theshoulder 712 is generally disposed at an acute angle relative to the centerline of thecontact ring 700 to center the substrate relative to thecontact ring 700. Optionally, thesubstrate seating surface 714 may be recessed from theshoulder 712 to form asubstrate receiving pocket 716. Thesubstrate receiving pocket 716 generally includes acylindrical wall 718 having a diameter configured slightly larger than the substrate (see FIGS. 9 and 10) so that a first seal, coupled to thecontact ring 700, remains in sealing contact with the substrate even in conditions where asubstrate 800 is located to one side of thepocket 716 such that a flat or notch 802 of thesubstrate 800 is biased towards acenterline 804 of thering 700. - Referring back to FIG. 7, the
contact ring 700 generally includes one or moreelectrical contact pads 720. Theelectrical contact pads 720 generally comprise a portion of theconductive body 702 that extends from thesubstrate seating surface 714. Theelectrical contact pads 720 are typically formed by removing a portion of the insulative covering 704 on thesubstrate seating surface 714. Optionally, the covering 704 may be removed from the additional portions of thesubstrate seating surface 714 or other portions of thecontact ring 700. The exposedconductive body 702 may be machined to form asingle contact pad 720 shown as aring 722 circumscribing thesubstrate seating surface 714. - Alternatively, as depicted in FIG. 10, the
electrical contact pads 720 may be configured as a plurality ofcontacts 1010, such as segmented arcs, hemispherical contacts or other shapes. Other methods of fabrication may alternatively be utilized, for example, pre-forming thecontacts pads 720 in theconductive body 702, then masking thepads 720 before applying the insulative covering 704 to leave thepads 720 exposed, or removing the covering 704 only from thepads 720 after application of thecoating 704 among other methods. - Power is generally supplied to the substrate through the
electric contact pads 720 through one ormore terminals 724 coupled to thebody 702 through the insulative covering 704. Theterminals 724 are typically coupled to a power source (not shown). - Additionally, depicted in FIG. 9 is a substrate wiping action of the
first seal 318 which keeps plating fluids from contaminating thecontact pads 720. Generally, as thesubstrate 800 is moved away from thecontact ring 700, thelip 324 of thefirst seal 318 moves radially inwards (i.e., towards the centerline 804) as the compression of theseal 318 is removed. As thelip 324 moves inward, thefirst sealing surface 326 moves across a feature side 902 of thesubstrate 800, wiping the plating fluid away from thecontact pads 720 as thesubstrate 800 is removed from thecontact ring 700. The wiping action of thelip 324 substantially prevents plating fluid from dipping or otherwise contaminating thecontact pads 720 which may adversely affect the plating of subsequent substrates. - Referring back to FIG. 1, the
process kit 120 is generally positioned below thesubstrate holder assembly 150. Theprocess kit 120 generally comprises abowl 130, acontainer body 172, ananode assembly 174 and afilter 176. Preferably, theanode assembly 174 is disposed below thecontainer body 172 and attached to a lower portion of thecontainer body 172, and thefilter 176 is disposed between theanode assembly 174 and thecontainer body 172. Thecontainer body 172 is preferably a cylindrical body comprised of an electrically insulative material, such as ceramics, plastics, plexiglass (acrylic), lexane, PVC, CPVC or PVDF. Alternatively, thecontainer body 172 can be made from a metal, such as stainless steel, nickel or titanium, which is coated with an insulating layer, such as Teflon®, PVDF, plastic, rubber and other combinations of materials that do not dissolve in the electrolyte and can be electrically insulated from the electrodes (i.e., the anode and cathode of the electroplating system). Thecontainer body 172 is preferably sized and adapted to conform to the substrate plating surface and the shape of the substrate being processed through the system, typically circular or rectangular in shape. One preferred embodiment of thecontainer body 172 comprises a cylindrical ceramic tube having an inner diameter that has about the same dimension as or slightly larger than the substrate diameter. The inventors have discovered that the rotational movement typically required in typical electroplating systems is not required to achieve uniform plating results when the size of the container body conforms to about the size of the substrate plating surface. - An upper portion of the
container body 172 extends radially outward to form anannular weir 178. Theweir 178 extends over theinner wall 146 of theelectrolyte collector 140 and allows the electrolyte to flow into theelectrolyte collector 140. The upper surface of theweir 178 preferably matches the lower surface of thecathode contact ring 166. Preferably, the upper surface of theweir 178 includes an inner annularflat portion 180, a middleinclined portion 182 and an outer declinedportion 184. When a substrate is positioned in the processing position, the substrate plating surface is positioned above the cylindrical opening of thecontainer body 172, and a gap for electrolyte flow is formed between the lower surface of thecathode contact ring 166 and the upper surface of theweir 178. The lower surface of thecathode contact ring 166 is disposed above the innerflat portion 180 and the middle inclined portion of theweir 178. The outer declinedportion 184 is sloped downwardly to facilitate flow of the electrolyte into theelectrolyte collector 140. - A lower portion of the
container body 172 extends radially outward to form a lowerannular flange 186 for securing thecontainer body 172 to thebowl 130. The outer dimension (i.e., circumference) of theannular flange 186 is smaller than the dimensions of theopening 144 and the inner circumference of theelectrolyte collector 140 to allow removal and replacement of theprocess kit 120 from theelectroplating process cell 100. Preferably, a plurality ofbolts 188 are fixedly disposed on theannular flange 186 and extend downwardly through matching bolt holes on thebowl 130. A plurality ofremovable fastener nuts 190 secure theprocess kit 120 onto thebowl 130. Aseal 187, such as an elastomer O-ring, is disposed betweencontainer body 172 and thebowl 130 radially inward from thebolts 188 to prevent leaks from theprocess kit 120. The nuts/bolts combination facilitates fast and easy removal and replacement of the components of theprocess kit 120 during maintenance. - Preferably, the
filter 176 is attached to and completely covers the lower opening of thecontainer body 172, and theanode assembly 174 is disposed below thefilter 176. Aspacer 192 is disposed between thefilter 176 and theanode assembly 174. Preferably, thefilter 176, thespacer 192, and theanode assembly 174 are fastened to a lower surface of thecontainer body 172 using removable fasteners, such as screws and/or bolts. Alternatively, thefilter 176, thespacer 192, and theanode assembly 174 are removably secured to thebowl 130. - The
anode assembly 174 preferably comprises a consumable anode that serves as a metal source in the electrolyte. Alternatively, theanode assembly 174 comprises a non-consumable anode, and the metal to be electroplated is supplied within the electrolyte from theelectrolyte replenishing system 132. Theanode assembly 174 may be a self-enclosed module having aporous anode enclosure 194 preferably made of the same metal as the metal to be electroplated, such as copper. Alternatively, theanode enclosure 194 is made of porous materials, such as ceramics or polymeric membranes. Asoluble metal 196, such as high purity copper for electro-chemical deposition of copper, is disposed within theanode enclosure 194. Thesoluble metal 196 preferably comprises metal particles, wires or a perforated sheet. Theporous anode enclosure 194 also acts as a filter that keeps the particulates generated by the dissolving metal within theanode enclosure 194. As compared to a non-consumable anode, the consumable (i.e., soluble) anode provides gas-generation-free electrolyte and minimizes the need to constantly replenish the metal in the electrolyte. - An
anode electrode contact 198 is inserted through theanode enclosure 194 to provide electrical connection to thesoluble metal 196 from a power supply. Preferably, theanode electrode contact 198 is made from a conductive material that is insoluble in the electrolyte, such as titanium, platinum and platinum-coated stainless steel. Theanode electrode contact 198 extends through thebowl 130 and is connected to an electrical power supply. Preferably, the anodeelectrical contact 198 includes a threadedportion 197 for afastener nut 199 to secure the anodeelectrical contact 198 to thebowl 130, and aseal 195, such as an elastomer washer, is disposed between thefastener nut 199 and thebowl 130 to prevent leaks from theprocess kit 120. - The
bowl 130 generally comprises acylindrical portion 102 and abottom portion 104. An upperannular flange 106 extends radially outward from the top of thecylindrical portion 102. The upperannular flange 106 includes a plurality ofholes 108 that matches the number ofbolts 188 from the lowerannular flange 186 of thecontainer body 172. To secure the upperannular flange 106 of thebowl 130 and the lowerannular flange 186 of thecontainer body 172, thebolts 188 are inserted through theholes 108, and thefastener nuts 190 are fastened onto thebolts 188. Preferably, the outer dimension (i.e., circumference) of the upperannular flange 106 is about the same as the outer dimension (i.e., circumference) of the lowerannular flange 186. Preferably, the lower surface of the upperannular flange 106 of thebowl 130 rests on a support flange of theelectroplating process cell 100 when theprocess kit 120 is positioned thereon. - The inner circumference of the
cylindrical portion 102 accommodates theanode assembly 174 and thefilter 176. Preferably, the outer dimensions of thefilter 176 and theanode assembly 174 are slightly smaller than the inner dimension of thecylindrical portion 102 to force a substantial portion of the electrolyte to flow through theanode assembly 174 first before flowing through thefilter 176. Thebottom portion 104 of thebowl 130 includes anelectrolyte inlet 134 that connects to an electrolyte supply line from theelectrolyte replenishing system 132. Preferably, theanode assembly 174 is disposed about a middle portion of thecylindrical portion 102 of thebowl 130 to provide a gap for electrolyte flow between theanode assembly 174 and theelectrolyte inlet 134 on thebottom portion 104. - The
electrolyte inlet 134 and the electrolyte supply line are preferably connected by a releasable connector that facilitates easy removal and replacement of theprocess kit 120. When theprocess kit 120 needs maintenance, the electrolyte is drained from theprocess kit 120, and the electrolyte flow in the electrolyte supply line is discontinued and drained. The connector for the electrolyte supply line is released from theelectrolyte inlet 134, and the electrical connection to theanode assembly 174 is also disconnected. Thehead assembly 110 may be raised or rotated to provide clearance for removal or service of theprocess kit 120. - FIG. 11A depicts another embodiment of a
contact ring 1100. Generally, thecontact ring 1100 is comprised of aconductive body 1102 and at least onecontact pin 1104. Theconductive body 1102 is typically a metal such as copper, stainless steel, aluminum or other metal. Generally, theconductive body 1102 includes atop surface 1160, abottom surface 1162, anouter diameter 1164 and aninner diameter 1166. An electrical lead 1024 is coupled to theconductive body 1102, typically through aflange 1010 comprising the outer portion of thetop surface 1160. Thetop surface 1160 also includes asubstrate seating surface 1114 coupled between ashoulder 1112 and theinner diameter 1166. The shoulder 112 is generally disposed at an acute angle relative to the centerline of thecontact ring 1100. Optionally, thesubstrate seating surface 1114 may be recessed from theshoulder 1112 to form asubstrate receiving pocket 1116. Thesubstrate receiving pocket 1116 generally includes acylindrical wall 1118 having a diameter configured slightly larger than the substrate (see FIGS. 9 and 11 and the discussion relative to contact ring 700) so that afirst seal 1150, coupled to thecontact ring 1100 proximate theinner diameter 1166, remains in sealing contact with the substrate (not shown in FIG. 11A). - The
substrate seating surface 1114 includes at least one pin receiving pocket (e.g., slot 1152) formed therein which receives thecontact pin 1104. Thecontact pin 1104 is typically comprised of a conductive material that provides good electrical contact with the substrate during processing. In one embodiment, thecontact pin 1104 is typically fabricated from a conductive material such as platinum or platinum alloys. - The
contact pin 1104 may be a single ring or be comprised of a plurality of individual segments as shown in FIG. 11B. Thecontact pin 1104 is typically coupled to theconductive body 1102 in a manner that ensures good electrical contact while providing good dimensional stability over time. For example, theconductive pin 1104 may be fixed to theconductive body 1102 using conductive adhesives or by brazing. In one embodiment depicted in FIG. 11A, theconductive body 1102 is fixed to theconductive body 1102 by anoble metal braze 1154. Thebraze 1154 generally wets the adjacent surfaces of theconductive body 1102 andcontact pin 1104 thereby eliminating or displacing any air or gas bubbles that may be present between the adjoining surfaces. Additionally, brazing allows for a repeatable, controlled conductance along the circumference of thecontact pin 1104 thereby promoting uniform current flow along the entire contact area of the contact ring to the substrate resulting in good plating uniformity and performance. - The
braze 1154 is generally applied by aprocess 1200 that simplifies fabrication over conventionally constructed contact rings. Referring both to FIG. 11A and the flow diagram of FIG. 12, theprocess 1200 begins with press-fitting or otherwise inserting thecontact pin 1104 into theslot 1152 of theconductive body 1102 atstep 1202. Atstep 1204, thebraze 1154 is applied theconductive body 1102 andcontact pin 1104. Atstep 1206, the assembly (contact pin 1104 and conductive body 1102) is heated to about 550 to about 600 degrees Celsius to stress relieve thecontact ring 1100. Typically, thestress relieving step 1206 has a duration of about 20 to about 60 minutes, however, the temperature and time for the stress relieving step will vary according to the material of thebody 1102. After thestress relieving step 1206, abraze flow step 1208 is initiated by heating the assembly to about 1200 degrees Celsius or other temperature that flows thebraze 1154 uniformly between theconductive body 1102 andcontact pin 1104 to fill all voids and remove any trapped gas. As thebraze 1154 completely fills the interstitial gap between theconductive body 1102 and thecontact pin 1104, good electrical contact between theconductive body 1102 and thecontact pin 1104 is ensured and the possibility of degradation of electrical contact due to thermal expansion of gases between theconductive body 1102 and thecontact pin 1104 during processing is substantially eliminated. - Optionally, the
contact ring 1100 may be at least partially coated with a ceramic or plastic insulatingcovering 1168, for example, a fluoropolymer, polyethylene or polyimide or other dielectric compatible with the plating process. The insulatingcovering 1168, applied in step 1210, may be applied by various methods, for example, spraying. - In
step 1212, an exposedportion 1170 of thecontact pin 1104 that extends from theconductive body 1102 is shaped to remove any run-out in elevation existing between thecontact pin 1104 and theconductive body 1102. The shapingstep 1212 may include machining, grinding, pressing, cutting or other processes that promotes surface planarity or common elevation of the exposedportion 1170 of thepin 1104. The shapingstep 1212 may be configured to leave a single, annular substrate contact surface on the exposed portion, or may be configured to provide a number of co-planar contact points, for example, a saw tooth configuration. The exposedportion 1170 is machined to provide a contact geometry that provides good electrical contact between thecontact pin 1104 and the substrate seated thereon. Moreover, the machining the exposedportion 1170 of thecontact pin 1104 to a common elevation relative to and along theconductive body 1102 ensures uniform loading of the substrate on the contact pins 1104 that results in uniform current flux through the contact pins 1104 to the substrate along each contact point (i.e., point where the substrate is in physical contact with the contact pin 1164). Uniform current flux enhances plating uniformity on the substrate. Additionally, if the exposedportion 1170 is encapsulated by the covering 1168 applied in step 1210, the covering 1168 is removed to allow intimate contact between thecontact pin 1104 and the substrate during processing. Alternatively, the exposedportion 1170 may be shaped prior to applying the covering 1168 to theconductive body 1102, with the exposedportion 1170 being masked during the application of the covering 1170 to prevent electrically insulating the exposedportion 1170. - FIG. 11B depict another embodiment of a
contact ring 1180. Thecontact ring 1180 is generally similar to thering 1100 described above, except wherein thering 1180 has contact pins 1182 (three are shown) disposed proximate aninner diameter 1184 while not having a first seal (1150 in FIG. 11A). The contact pins 1182, which may be a plurality of discrete elements as shown in FIG. 11B or a continuous annular ring, is coupled to a conductive body 1186 of thecontact ring 1180 by abraze 1188 applied between the conductive body 1186 and a portion of thepins 1182 disposed in aslot 1190 formed in the conductive body 1186, typically fixed thereto by brazing. The contact pins 1182 and anoptional covering 1192 are generally applied by the method described byprocess 1200. - FIG. 13 depicts another embodiment of a
contact pin 1302. Thecontact pin 1302 is generally configured as a plurality of arc segments or sections of a ring. To ensure uniform electrical contact around the substrate, a plurality of contact pins 1302 (only one is shown in FIG. 13) are typically arranged in a polar array and disposed in theslot 1160. Thecontact pin 1302 includes at least one tooth 1304 (two are shown) that extends above abody 1306. Thebody 1306 is generally inserted into theslot 1160 as described with reference to the embodiments of FIGS. 11A-B, with theteeth 1304 extending above thesubstrate seating surface 1114 of the conductive body 1102 (shown in phantom). Thecontact pin 1302 is generally fixed to theconductive body 1102 as described inmethod 1100, including the application of an optional dielectric coating to theconductive body 1102. - FIG. 14 depicts another embodiment of a
contact pin 1402. Thecontact pin 1402 is generally configured as an arc or section of a ring but may alternatively be a ring. Thecontact pin 1402 includes a plurality of contact posts 1404 (three are shown) that are inserted into ahole 1408 formed in abody 1406 of thepin 1402. Thebody 1406 is generally inserted into theslot 1160 as described above with theposts 1404 extending above thesubstrate seating surface 1114 of the conductive body 1102 (shown in phantom). Theposts 1404 are typically brazed to thebody 1406 prior to inserting thecontact pin 1406 into theslot 1152. Alternatively, theposts 1404 may be inserted and brazed into theholes 1408 of thecontact pin 1402 as part of any step of themethod 1100 utilized to fix thebody 1406 to theconductive body 1102. - FIG. 15 depicts another embodiment of a
contact ring 1500. Generally, thecontact ring 1500 is comprised of aconductive body 1502 and a plurality of contact pins 1504. Theconductive body 1502 is typically a metal such as copper, stainless steel, aluminum or other metal. Generally, theconductive body 1502 includes a top surface 1560, abottom surface 1562, anouter diameter 1564 and aninner diameter 1566. The top surface 1560 includes aflange 1510 and asubstrate seating surface 1514 coupled between ashoulder 1512 and theinner diameter 1566. Theshoulder 1512 is generally disposed at an acute angle relative to the centerline of thecontact ring 1500 to center the substrate relative to thecontact ring 1500. Optionally, thesubstrate seating surface 1514 may be recessed from theshoulder 1512 to form asubstrate receiving pocket 1516 as described with reference to thepocket 1116 described above. - The
substrate seating surface 1514 includes a plurality ofapertures 1552 formed therein. Each of theapertures 1552 receives a portion of arespective contact pin 1504. Thecontact pin 1504 is typically comprised of a conductive material that provides good electrical contact with the substrate during processing, for example, platinum or platinum alloys. - The
contact pin 1504 is typically coupled to theconductive body 1502 in a manner that ensures good electrical contact while providing good dimensional stability over time. For example, theconductive pin 1504 may be fixed to theconductive body 1502 using conductive adhesives or by brazing. In the embodiment depicted in FIG. 15, theconductive body 1502 is fixed to theconductive body 1502 by a noble metal braze 1554 in a method similar to themethod 1100 described above. - While the foregoing is directed to the preferred embodiment of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof. The scope of the invention is determined by the claims which follow.
Claims (36)
1. Apparatus for electro-chemical deposition on a substrate, comprising:
an annular conductive body adapted to support the substrate and having at least one pin receiving pocket formed therein; and
at least one electrical contact pin having a portion brazed in the receiving pocket, the contact pin adapted to electrically bias the substrate.
2. The apparatus of claim 1 , wherein the contact pin is an annular ring.
3. The apparatus of claim 1 , wherein the contact pin is a plurality of arc segments.
4. The apparatus of claim 1 , wherein the contact pin is a plurality of cylindrical posts.
5. The apparatus of claim 1 , wherein the conductive body further comprises:
a first surface;
a shoulder coupled to the first surface; and
a substrate support surface extending inward from the shoulder and supporting the electrical contact pin thereon, the substrate support surface and shoulder defining a substrate receiving pocket.
6. The apparatus of claim 1 , wherein the contact pin is comprised platinum or platinum alloy.
7. The apparatus of claim 1 further comprising:
a dielectric covering at least partially encapsulating the conductive body.
8. The apparatus of claim 7 , wherein the contact pin further comprises:
a portion extending from the conductive body and having a contact surface free from the dielectric covering.
9. Apparatus for electro-chemical deposition on a substrate, comprising:
an annular conductive body adapted to support the substrate and having at least one pin receiving pocket formed therein;
at least one electrical contact pin having a portion brazed in the receiving pocket, the contact pin adapted to electrical bias the substrate proximate the substrate's perimeter; and
a first seal disposed inward of the electrical contact pin and providing a seal with the conductive body.
10. The apparatus of claim 9 , wherein the contact pin is an annular ring.
11. The apparatus of claim 9 , wherein the contact pin is a plurality of arc segments.
12. The apparatus of claim 9 , wherein the contact pin is a plurality of cylindrical posts.
13. The apparatus of claim 9 , wherein the conductive body further comprises:
a first surface;
a shoulder coupled to the first surface;
a substrate support surface extending inward from the shoulder and supporting the electrical contact pin thereon, the substrate support surface and shoulder defining a substrate receiving pocket; and
an inner ring surface disposed radially inward of the substrate support surface, the inner ring surface in sealing communication with the first seal.
14. The apparatus of claim 9 , wherein the contact pin is comprised platinum or platinum alloy.
15. The apparatus of claim 9 further comprising:
a dielectric covering at least partially encapsulating the conductive body.
16. The apparatus of claim 15 , wherein the contact pin further comprises:
a portion extending from the conductive body and having a contact surface free from the dielectric covering.
17. Apparatus for electro-chemical deposition on a substrate, comprising:
an annular conductive body adapted to support the substrate and having at least one pin receiving pocket formed therein;
a dielectric covering at least partially encapsulating the conductive body; and
at least one electrical contact pin having a portion brazed in the receiving pocket, the contact pin adapted to electrical bias the substrate proximate the substrate's perimeter and having an exposed portion extending from the conductive body and having a contact surface free from the dielectric covering.
18. A method of fabricating a contact ring utilized for substrate plating, the method comprising:
inserting a portion of at least one contact pin in a pin receiving pocket formed in an annular conductive body to form an assembly; and
brazing the contact pin to the conductive body in a manner that excludes gases between the inserted portion of the contact pin and the pin receiving pocket.
19. The method of claim 18 , wherein the step of inserting further comprises:
inserting a plurality of contact pins into the conductive body along a common radius.
20. The method of claim 18 further comprising:
stress relieving the contact pin and conductive body assembly.
21. The method of claim 20 , wherein the step of stress relieving the assembly further comprises:
heating the assembly to a temperature of about 550 degrees Celsius and 600 degrees Celsius for about 20 to about 60 minutes.
22. The method of claim 20 further comprising:
flowing the braze between the contact pin and conductive body.
23. The method of claim 22 , wherein the step of flowing the braze further comprises:
heating the assembly to a temperature that flows the braze between the contact pin and conductive body.
24. The method of claim 18 further comprising
shaping an exposed portion of the contact pins to a common elevation relative to the conductive body.
25. The method of claim 18 further comprising
encapsulating at least a portion of the conductive body with a dielectric material.
26. The method of claim 25 , where a contact surface of the contact pin is free of the dielectric material.
27. A method of fabricating a contact ring utilized for substrate plating, the method comprising:
inserting a portion of at least one contact pin in a pin receiving pocket formed in an annular conductive body to form an assembly;
brazing the contact pin to the conductive body in a manner that excludes gases between the inserted portion of the contact pin and the pin receiving pocket; and
shaping an exposed portion of the contact pins to a common elevation relative to the conductive body.
28. A method of fabricating a contact ring utilized for substrate plating, the method comprising:
inserting a portion of at least one contact pin in a pin receiving pocket formed in an annular conductive body to form an assembly;
brazing the contact pin to the conductive body in a manner that excludes gases between the inserted portion of the contact pin and the pin receiving pocket;
stress relieving the contact pin and conductive body assembly by holding the assembly at a first temperature;
flowing the braze between the contact pin and conductive body by elevating the temperature of the assembly from the first temperature to a second temperature; and
shaping an exposed portion of the contact pins to a common elevation relative to the conductive body.
29. The method of claim 28 , wherein the step of inserting further comprises;
inserting a plurality of contact pins into the conductive body along a common radius.
30. The method of claim 28 , wherein the step of stress relieving the assembly further comprises:
heating the assembly to a temperature of about 550 degrees Celsius and 600 degrees Celsius for about 20 to about 60 minutes.
31. The method of claim 28 further comprising
encapsulating at least a portion of the conductive body with a dielectric material.
32. The method of claim 31 , where a contact surface of the contact pin is free of the dielectric material.
33. A method of fabricating a contact ring utilized for substrate plating, the method comprising:
inserting a portion of at least one contact pin in a pin receiving pocket formed in an annular conductive body to form an assembly;
brazing the contact pin to the conductive body in a manner that excludes gases between the inserted portion of the contact pin and the pin receiving pocket;
stress relieving the contact pin and conductive body assembly by holding the assembly at a first temperature;
flowing the braze between the contact pin and conductive body by elevating the temperature of the assembly from the first temperature to a second temperature;
encapsulating at least a portion of the conductive body with a dielectric material; and
shaping an exposed portion of the contact pins to a common elevation relative to the conductive body, wherein at least a contact surface of the exposed portion is free of the dielectric material.
34. The method of claim 33 , wherein the step of inserting further comprises;
inserting a plurality of contact pins into the conductive body along a common radius.
35. The method of claim 33 , wherein the step of stress relieving the assembly further comprises:
heating the assembly to a temperature of about 550 degrees Celsius and 600 degrees Celsius for about 20 to about 60 minutes.
36. The method of claim 33 , wherein the step of shaping removes dielectric material from the exposed portion of the contact pin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US10/061,126 US20030010641A1 (en) | 2001-07-13 | 2002-01-30 | Method and apparatus for encapsulation of an edge of a substrate during an electro-chemical deposition process |
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Application Number | Priority Date | Filing Date | Title |
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US09/905,513 US6908540B2 (en) | 2001-07-13 | 2001-07-13 | Method and apparatus for encapsulation of an edge of a substrate during an electro-chemical deposition process |
US10/061,126 US20030010641A1 (en) | 2001-07-13 | 2002-01-30 | Method and apparatus for encapsulation of an edge of a substrate during an electro-chemical deposition process |
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US10/061,126 Abandoned US20030010641A1 (en) | 2001-07-13 | 2002-01-30 | Method and apparatus for encapsulation of an edge of a substrate during an electro-chemical deposition process |
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Also Published As
Publication number | Publication date |
---|---|
WO2003006718B1 (en) | 2003-09-12 |
US6908540B2 (en) | 2005-06-21 |
WO2003006718A1 (en) | 2003-01-23 |
US20030010640A1 (en) | 2003-01-16 |
TW541597B (en) | 2003-07-11 |
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