US20020006146A1 - Smart laser diode array assembly - Google Patents
Smart laser diode array assembly Download PDFInfo
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- US20020006146A1 US20020006146A1 US09/923,754 US92375401A US2002006146A1 US 20020006146 A1 US20020006146 A1 US 20020006146A1 US 92375401 A US92375401 A US 92375401A US 2002006146 A1 US2002006146 A1 US 2002006146A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0021—Degradation or life time measurements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/02365—Fixing laser chips on mounts by clamping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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Abstract
Description
- The present invention relates generally to lasers diodes and, in particular, to an assembly that includes a laser diode array, an integral memory device storing operational information about the laser diode array, and an integral processing device that records information to and retrieves information from the memory device.
- Semiconductor laser diodes have numerous advantages. They are small in that the widths of their active regions are typically submicron to a few microns and their heights are usually no more than a fraction of a millimeter. The length of their active regions is typically less than about a millimeter. The internal reflective surfaces, which are required in order to produce emission in one direction, are formed by cleaving the substrate from which the laser diodes are produced and, thus, have high mechanical stability. Additionally, high efficiencies are possible with semiconductor laser diodes with pulsed junction laser diodes having external quantum efficiencies near 50% in some cases.
- The cost and packaging of laser diodes are problems that has limited their commercialization. It is only recently that both the technology and availability of laser diode bars, and a method for packaging them, has made two dimensional laser diode pump arrays a commercial reality. One technique for producing such a two dimensional laser diode array is demonstrated in the U.S. Pat. Nos. 5,040,187 and 5,128,951 to Karpinski. Also, newer techniques have been used to make more efficient an older packaging approach whereby individual diodes are sandwiched between two metallic foils. The advent of lower cost laser diodes and efficient packaging has led to the possibility of producing very large, solid-state laser systems which use many pump arrays.
- While laser diode pump arrays have a relatively long life when compared to the traditional flash-lamp or arc-lamp pump sources, they are still considered consumable items that require periodic replacement. In some cases with modularized laser diode arrays, one may even wish to replace only a portion of the array. For pulsed lasers, the number of shots which the laser diode arrays have fired is recorded. For continuous-wave (CW) lasers, the amount of time the laser diode arrays have operated (time-on) is of interest. Typically, these values are monitored and stored within the external electronic control systems which operate these laser systems. These electronic control systems must contain a shot-counter or time-on counter for each laser diode pump array to determine the relative age of each laser diode array thereby permitting the development of a replacement schedule for each laser diode array. However, when a laser diode pump array is replaced, these shot-counters or on-timers must have the ability to be reset to zero if a new laser diode array is used. If a used laser diode array is installed, then these shot-counters or on-timers must have the ability to be reset to a predetermined value. Furthermore, when a laser diode array is removed from a system for replacement, a difficulty arises in that there is no longer a shot count or on-time associated with the pump array, unless written records are meticulously kept.
- In addition to the shot-count, there is other information about a diode array that is of particular interest, such as the serial number of the array, the number and frequency of over-temperature fault conditions, and the voltage drop (i.e. the resistance rise) across the array. These characteristics are useful for selecting an application for a used laser diode array, or for determining the causes of its failure. These characteristics are also important for warranty purposes. However, the operator of the system has no interest in recording these data since it may limit his or her ability to rely on the warranty when a failure arises. On the other hand, the manufacturer has a keen interest in knowing the operational history of an array for warranty purposes.
- When semiconductor laser diodes are used as the optical pumping source for larger, solid-state laser systems, the emitted wavelength is critical. Laser diode pump arrays achieve efficient pumping of the laser host material (e.g. Neodymium-doped, Yttrium-Aluminum Garnet) by emitting all of their light energy in a very narrow spectral band which is matched to the absorption spectrum of the gain media (i.e. slabs, rods, crystals etc.), typically within 2-6 nanometers full-width at the half-maximum point (fwhm). The laser diode pump array emission wavelength is a function of the temperature at which the pump array is operated. The pump array temperature is a complicated function of many interrelated variables. The most important of these variables are the temperature of the coolant flowing to the diode array, the operational parameters of the diode array, and the configuration of the heat exchanger on which the laser diodes are mounted. The operational parameter of a CW driven array is simply the drive current. But for pulsed laser systems, the peak drive current, the repetition rate, and the pulse width of the drive current are all important operational parameters. Because the performance of the laser diode array changes during the service life of a laser diode array, the host external system controller has to compensate for any degradation of performance (output power or wavelength) by modifying these input operational parameters except for the heat exchanger configuration. Often, the altering of the operational parameters requires manual calibration of the arrays using external optical sensors. This is a tedious job and requires a skilled technician who understands the ramifications of modifying the interrelated variables which change the output power and wavelength. Even when the laser diode array's operational parameters are properly calibrated, rapid changes in the performance of the laser diode array may go unnoticed until the next scheduled maintenance. This manual calibration also is often required during the initial installation of the laser diode array assembly.
- Therefore, a need exists for a laser diode array assembly that includes an integral means for recording operational events and maintaining this information with the assembly throughout its service life. It would also be beneficial for this laser diode array assembly to have the capability of instructing the external laser operating system on the input drive parameters that should be used to provide for optimal output of the laser diode array assembly.
- A modular laser diode array assembly includes at least one laser diode array, an intermediate structure on which the array is mounted, and an integral memory device. The laser diode array has a plurality of laser diodes which are in electrical contact with at least one other of the plurality of laser diodes. The assembly further includes means for supplying external power to the laser diode array. The memory device stores operating information for the laser diode array and is mounted on the intermediate structure which may be a printed circuit board. The memory device communicates with an external operating system. After the assembly is installed in and connected to the external operating system, a system controller accesses the memory device to obtain the operating information (temperature, input power parameters, etc.) which enables the system controller to properly apply power to, or set conditions for, the laser diode array.
- In another embodiment, the assembly includes sensors for sensing the operating conditions experienced by the laser diode array. The external operating system monitors the sensors to assist in determining the operational parameters at which the system is to be operated. These sensors may be optical power sensors, optical wavelength sensors, electrical input power sensors, temperature sensors, vibration sensors, etc.
- In yet another embodiment, the assembly includes processing means that communicates with the external operating system. The processing means is coupled to the sensors for directly monitoring the operating conditions of the laser diode array and is also coupled to the memory device. Based on the operating conditions monitored, the processing means instructs the external operating system to supply the optimum operating parameters. Thus, the assembly is self-calibrating in that it monitors the operating conditions and instructs the external operating system to provide input power in a manner that allows for the optimum output.
- Using the integral memory device and the processing means provides numerous benefits. For example, the shot-count or on-time value becomes physically a part of the assembly as it is stored within the integral memory device. This integral memory device could then be read from and updated, as necessary, by the control electronics of the external operating system or the processing means when one is used.
- There are many additional pieces of data which could be stored in this memory device, such as: the array serial number; the number and times of fault conditions such as over temperature or activation of protection circuitry; the voltage drop across the array and the time of the occurrence if it changes significantly (this may be an indication of individual laser bar failures); and the array's spectral and power response to different operational conditions. The memory device may also record the ambient environmental conditions such as the ambient temperature, the ambient shock environment, ambient humidity, or electrostatic discharge (ESD) events resulting from the environment around the array.
- The above summary of the present invention is not intended to represent each embodiment, or every aspect, of the present invention. This is the purpose of the figures and the detailed description which follow.
- Other objects and advantages of the invention will become apparent upon reading the following detailed description and upon reference to the drawings in which:
- FIG. 1A is a perspective view of a laser diode array used in the present invention;
- FIG. 1B is a perspective view of another laser diode array used in the present invention;
- FIGS.2A-2D are views of a multiple-array assembly having an integral memory device and a sensor;
- FIGS.3A-3C are views of a multiple-array assembly having an integral processing device including a memory device, a sensor, and multiple photodetectors;
- FIGS.4A-4B are views of a single-array assembly having an integral processing device including a memory device, a sensor, and a photodetector;
- FIG. 5 is a plan view of a single-array assembly having an integral memory device, a temperature sensor, and a photodetector;
- FIG. 6 is a plan view of a multiple-array assembly having an integral processing device including a memory device, a temperature sensor, multiple photodetectors, and an input power sensing device;
- FIG. 7 is perspective view of the multiple-array assembly of FIGS.3A-3C including a connector and being installed on a heat exchanger;
- FIG. 8 is a perspective view of a multiple-array assembly having an printed circuit board positioned at approximately 90 degrees from the plane in which the emitting surfaces reside;
- FIG. 9 is a schematic view of a multiple-array assembly incorporating the present invention and being installed in an external operating system; and
- FIG. 10 is a schematic view of an external operating system being coupled to multiple assemblies labeled1-N.
- While the invention is susceptible to various modifications and alternative forms, a specific embodiment thereof has been shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that it is not intended to limit the invention to the particular forms disclosed. Quite to the contrary, the intent is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.
- Referring initially to FIG. 1A, a
laser diode array 10 is illustrated in a perspective view. Thelaser diode array 10 includes a plurality of laser diodes packages 12 each of which includes alaser diode 13 sandwiched between aheat sink 14 and alid 17. The laser diode packages 12 are arranged in a parallel fashion commonly referred to as a stack. At the ends of the stack areend caps thermal backplane 20, usually made of an electrically insulative material, such as beryllium oxide, is the surface to which each of thepackages 12 is mounted. Thelaser diode array 10 is one type of array that can be used in the present invention. - In FIG. 1B, a second type of
laser diode array 30 is illustrated. Thelaser diode array 30 includes asubstrate 32 made of an electrically insulative material and a plurality ofgrooves 34 which are cut in thesubstrate 32. Within eachgroove 34 is alaser diode bar 36. To conduct electricity through the plurality of laser diode bars 36, a metallized layer is placed within eachgroove 34 and connectsadjacent grooves 34. The bottom of thesubstrate 32 is the backplane through which heat flows to the heat exchanger positioned below the bottom. Although the number ofgrooves 34 is shown as ten, the application of thearray 30 dictates the amount laser diode bars 36 and, therefore, the number ofgrooves 34.Laser diode array 30 is another type of laser diode array that can be used with the present invention. - FIGS.2A-2D are views of an
assembly 40 having sixlaser diode arrays 30, anintegral memory device 42, and asensor 44. Thememory device 42 and thesensor 44 are mounted on a printed circuit board (PCB) 46. The information on thememory device 42 can be accessed and thesensor 44 can be monitored throughcontact pads 47 located on thePCB 46. Aboard heat sink 48 is disposed on the back of thePCB 46 and is the surface to which the backplanes of thelaser diode arrays 30 are attached. Thediode arrays 30 can be soldered to thisheat sink 48 or fastened in other ways which minimize the thermal resistance across the interface of theheat sink 48 and thelaser diode array 30. - The
sensor 44 can be of a type that measures output power or output wavelength (assuming it receives the emitted light). More commonly, thesensor 44 is a temperature sensor since the temperature of thearrays 30 is critical to their operation. If thesensor 44 is a temperature sensor, it could be moved to a location closer to the backplanes of thearrays 30. Thesensor 44 may also be an ESD sensor or one that measures the shot-count or on-time of thearray 30. Furthermore, thePCB 46 may contain multiple sensors although only onesensor 44 is shown. - The
memory device 42 preferably is a non-volatile memory device such that the information stored therein is not altered when power is removed from thememory device 42. An example of such amemory device 42 is the model 24632, manufactured by Microchip, of Chandler, Ariz. - To protect the emitting surfaces of the
laser diode arrays 30, aprotective window 50 can be affixed to theassembly 40. Theprotective window 50 is supported by aretainer frame 52. Theframe 52 and thewindow 50 may merely act to protect the upper emitting surfaces. Alternatively, theframe 52 andwindow 50 may completely seal the sixlaser diode arrays 30 by placing a sealing material between theframe 52 and thewindow 50. Thewindow 50 can be made of a variety of materials including acrylic with an anti-reflective coating. Besides thewindow 50 that is shown, thewindow 50 could be replaced by a diffractive, binary, or two-dimensional array of lenses to provide focusing and collimation to the beam of energy. FIG. 2D illustrates theassembly 40 without thewindow 50 andretainer frame 52. - The
laser diode arrays 30 require electrical energy to produce the emitted radiation. Thus, a pair ofcontact pads PCB 46. To provide electrical energy to thelaser diode arrays 30, a pair ofleads end arrays 30 and thepads Adjacent arrays 30 are connected in electrical series throughjumpers 57. In the case where thewindow 50 and theframe 52 seal thelaser diodes 30, theleads window frame 52. The host external operating system makes electrical contact with theassembly 40 through thecontact pads - The
PCB 46 and theboard heat sink 48 includeholes 58 through which fasteners will pass to connect theassembly 40 to the ultimate heat sink which is typically a high efficiency heat exchanger. Also provided are indexingholes 60 which align thePCB 46 and, therefore, thearray 30 on the ultimate heat sink. - Although the
PCB 46 is shown as the intermediate structure between thearray 30 and thememory device 42, other structures could be used. For example, merely providing an epoxy layer which adheres thememory device 42 to thearray 30 may suffice if the epoxy provides electrical insulation. - The
memory device 42 contains the operating information for thelaser diode arrays 30. The types of information can range from the basic to the complex. For example, the identity of the laserdiode array assembly 40 can be recorded in the memory device. This can include the wafer number of the wafers that were used to produce the laser diode bars that are contained in eacharray 30. It may also include the lot number of the bars comprising thearrays 30 or the laser diode bar number. It may also include an inspector number associated with the individual who approved of the bar in the quality control department. - The
memory device 42 can also be loaded with performance data on the laserdiode array assembly 40. For example, the center wavelength can be given as well as the wavelength shift as a function of temperature (i.e. Gallium Arsenide laser diodes shift at about 1 nanometer per about 3-4° C.). The wavelength distribution of thearrays 30 can be stored so as to provide the full-width at half maximum value (FWHM) (i.e. the difference between the wavelengths at the point on the wavelength distribution curve where the intensity is at one-half of its maximum value). This FWHM value is critical when theassembly 40 is used for solid-state laser pumping applications. The wavelength can also be given as a function of spatial orientation along theassembly 40. - Information related to the output power can be included as well. For example, the output power can be given as a function of the efficiency of the
arrays 30, the current and voltage at which thearrays 30 are driven, or the threshold current (i.e. the current after which lasing occurs). The output power can also be given as a function of spatial orientation along theassembly 40. Also, the estimated output power degradation of thearray 30 over its service life can be stored. - The
memory device 42 can also include extreme design values for various operating conditions that should not be exceeded for a particular array. For example, the maximum or minimum design operating temperature can be recorded as can the maximum design drive parameters such as current, pulse-width, duty-cycle, voltage, etc. This allows for a real-time comparison between the actual operating conditions and the extreme design conditions to ensure that no damage will occur to thelaser diode array 30. The external operating system may use such a comparison to shut-down the system when the extreme design values are exceeded. - Although the
memory device 42 has been described thus far as having operational information that has been recorded before its delivery to the customer, thememory device 42 can also be updated with information throughout its service life. Typically, the external operating system is monitoring various environmental conditions including temperature, vibration, shock, humidity, and also the input drive parameters. Since the operating system is configured to read from thememory device 42, the only difference needed to achieve the goal of updating thememory device 42 is merely having an external operating system with the capability to write to thememory device 42. Consequently, thememory device 42 then captures the operational history of thearray 30 which is advantageous for determining the cause of failures and for warranty purposes. - The types of operational information related to the service life of the
array 30 that can be recorded in thememory device 42 is quite extensive. For example, the shot-count of a pulsedlaser diode array 30 or the on-time of a CWlaser diode array 30 can be recorded. This is a very important value when considering the warranty of thearray 30. - The extreme operating conditions which the
laser diode array 30 experiences can be recorded in thememory device 42 which is also useful for warranty purposes and for determining the cause for failures. Thus, the maximum and minimum operating temperature can be recorded in thememory device 42. Other operating conditions such as the maximum shock, vibration, and humidity can be recorded as well. The maximum drive parameters (current, voltage, pulse width, frequency, etc.) can also be recorded in thememory device 42. Additionally, the extreme ambient conditions of the environment surrounding thearray 30 or surrounding the entire external operating system can be stored as well (nonoperational or operational). - A list of incident reports may be recorded in the
memory device 42. This may include the over-temperature failures, over-current failures, over-voltage failures, reverse-voltage failures (i.e. wrong bias across the arrays 30), coolant-flow interrupts (to the heat exchanger), and electrostatic discharge events. These faults can be recorded as merely an affirmative response to whether the fault occurred or as the value of the condition. Additionally, a drop in the voltage across thearray 30 is indicative of a single laser diode failure and may be recorded. For example, a typical voltage drop across one good laser diode is approximately 2.0 volts and about 0.5 volt after certain types of failures. The number of laser diode bar failures can be estimated by such a voltage drop. Other types of fault conditions may be included as well, including those fault conditions recorded by sensors monitoring the output of the arrays 30 (i.e. wavelength and power). - Thus far, only fault conditions, operating conditions, and non-operating conditions have been discussed as being data that are recorded in the
memory device 42. However, recording the dates and times of these conditions is also worthwhile and can be accomplished by having the external operating system write the times that these conditions occur in thememory device 42. When the time values are recorded, thememory device 42 then can be used to store a variety of parameters as a flimction of time (temperature, input power, output power, output wavelength, etc. v. time). - FIGS.3A-3C illustrate an
assembly 140 havingmultiple arrays 30 similar to theassembly 40 of FIGS. 2A-2D. Theassembly 140 includes aprocessor 143 and atemperature sensor 144 that are mounted on aPCB 146. Aheat sink 148 is located on the backside of thePCB 146 and is the structure to which thearrays 30 are attached. Eacharray 30 has acorresponding photodetector 149 which measures the output characteristics of the emitted light. As shown best in FIG. 3C, the emitted light reflects partially off the inside surface of thewindow 150 and then hits thephotodetector 149. Thephotodetector 149 may measure the power of the reflected light which corresponds to the output power of theentire array 30. Alternatively, thephotodetector 149 may be of a more advanced type that measures the output wavelength of the reflected beam which corresponds to the output wavelength of the emitted output. - The
processor 143 as shown includes a memory portion which allows basic information to be stored therein (extreme operating temperatures, input powers, etc.) If a larger amount of information is to be stored, then it may be desirable to include a separate memory chip on thePCB 146, like thememory device 42 in FIG. 2, and couple it to theprocessor 143 for storing the additional data. This may be required when the operational history of thelaser diode array 30 is to be recorded. - The
processor 143 is coupled to thetemperature sensor 144 and to thephotodetectors 149 through traces on thePCB 146. Theprocessor 143 is also coupled to an external operating system throughcontact pads 147. In this way, theprocessor 143 determines the appropriate drive levels to be supplied by the external operating system based on the conditions it monitors through thetemperature sensor 144 and thephotodetectors 149. Theprocessor 143 also instructs the external operating system to supply the coolant at a temperature and a rate that maintains the temperature of thetemperature sensor 144 at the desired value. Theprocessor 143, therefore, provides a self-calibrating system in that any deviations seen in the output power and wavelength can be altered by instructing the operating system to change the input drive parameters and the coolant characteristics. - The
processor 143 would typically be an Application Specific Integrated Circuit (ASIC) or a hybrid, custom-manufactured model. - FIGS. 4A and 4B illustrate an
assembly 180 having asingle array 182, aprocessor 184, aphotodetector 186, and atemperature sensor 188. Thearray 182 holds substantially more bars thanarrays photodetector 186 and thetemperature sensor 188 are mounted on aPCB 190 and are coupled to theprocessor 184 which is also mounted on thePCB 190. Thearray 182 is mounted to aheat sink 189 below thePCB 190. Power is supplied to thearray 182 via a pair ofcontacts array 182 vialeads trace 194 b runs within thePCB 190 from the lead 194 a to the endcap of thearray 182 adjacent thephotodetector 186. - The
processor 184 has internal memory portion with enough capacity to perform the required tasks. Alternatively, a memory device can be mounted on thePCB 190 and coupled to theprocessor 184. - Also connected to the
processor 184 is acircuit 196 which limits high power being received by theprocessor 184. Thiscircuit 196 is coupled to the input power leads and allows theprocessor 184 to determine the voltage drop across thearray 182 or the current therethrough. Because thearray 182 is usually coupled in series with a field effect transistor (FET) and a known voltage drop occurs across thediode array 182 and the FET, theprocessor 184 could also monitor the voltage drop across the FET to determine the voltage drop across thearray 182. The change in the voltage drop across thearray 182 is indicative of a failure of the individual laser diode bars within thearray 182. Thecircuit 196 may include a fuse for guarding against high voltage or high current. - The use of such a
circuit 196 also permits the counting of each shot supplied to thearray 182 or the amount of on-time ifarray 182 is a CW laser. Thus, theprocessor 184 would count and store these values. - Although the
circuit 196 has been described as one which measures the voltage drop across thearray 182 or counts shots, it could also include a reverse-bias sensor (possibly an electrical diode) that permits the flow of current in one direction. If a voltage is applied in the wrong direction, then the current will flow through the electrical diode instead of thearray 182 which decreases the likelihood of any harm to the array. Thus, theprocessor 184 can monitor the occurrence of a reverse-bias fault. - The
circuit 196 can also include components for monitoring a electrostatic discharge across thearray 182. Thus, theprocessor 184 could monitor thiscircuit 196 for such an event and record it as well. - FIG. 5 illustrates an
assembly 200 having asingle array 202, amemory device 204, aphotodetector 206, and atemperature sensor 208. Thesememory device 204 and thephotodetector 206 are mounted on aPCB 210 while the array is mounted on a heat sink on the bottom of thePCB 210. Thus, this single-array assembly 200 does not have the processing capability ofassembly 180 in FIG. 4. Instead, assembly 200 supplies to the external operating system the operational information needed to operate thearray 202. Also, thememory device 204 can be configured to receive and record information (fault conditions, operating conditions, etc.) from the external operating system. - The external operating system communicates with the
memory device 204 by thecontact pads 212 at the edges of thePCB 210. Likewise, the external operating system communicates with thephotodetector 206 and thetemperature sensor 208 via thepads 212. - FIG. 5 also illustrates the geometrical configuration of the
assembly 200. The emitting surfaces of thelaser diode array 202 are within an area defined by LDY multiplied by LDX. The area of thePCB 210 is defined PCBX multiplied by PCBY. It is desirable to keep the ratio of the PCB area to the emitting area as low as possible such that theassembly 200 having these additional components (e.g. sensors, memory devices, processors, etc.) is not much larger that just the array. This is important for retrofitting purposes. Generally, the ratio of the PCB area to the emitting area is less than approximately 10 to 1. In a preferred embodiment, the ratio is in the range from about 5 to 1 to about 7 to 1. When a connector is added to the PCB 210 (see FIGS. 7 and 9 below), the ratio is less than about 14 to 1. - FIG. 6 illustrates an
assembly 230 having sixarrays 30 which is very similar to theassembly 140 shown in FIGS. 3A-3C. However, theprocessor 232 is coupled to thecontacts circuits circuits 236 limit the high power to theprocessor 232 so as to allow theprocessor 232 to determine the voltage drop across the sixarrays 30. - Again,
circuits -
Circuits processor 232 can receive a signal from these circuit each time power is supplied to theassembly 230. Alternatively, ifcircuits 236 include an electromagnetic sensor (e.g. a Hall's Effect sensor) then they just need to be in close proximity to thearrays 30 or thecontact pads assembly 200, the Hall's Effect sensor is tripped by the resultant electromagnetic field. Theprocessor 232 then receives the signal after each shot. - The
arrays 30 have a finite life which is in a large part a function of the temperature at which they are operated and the power is supplied thereto. Because theprocessor 232 monitors both the temperature and the input power, theprocessor 232 can compare these values to a range of standard, assumed, operating conditions. Then, theprocessor 232 modifies the estimated life at a predetermined rate programmed in theprocessor 232 based on the actual conditions under which thearrays 30 are being operated. In a preferred embodiment, not only would theprocessor 232 inform the external operating system of the amount of service that is remaining, but theprocessor 232 would also inform the external operating system of the amount that the estimated life has been adjusted based on the actual operating conditions. - FIG. 7 illustrates an
assembly 250, similar to the one shown in FIGS. 2A-2D, that is mounted on aheat exchanger 252 having aninlet port 254 and anoutlet port 256. Theassembly 250 further includes aconnector 258 to which the external operating system is coupled. Thearrays 30 are connected to theheat sink 257 of thePCB 259. Theheat sink 257 of thePCB 259 is mounted on theheat exchanger 252 by a series offasteners 260. - The
connector 258 is coupled to amemory device 261, to a sensor 262 (i.e. one of the types discussed thus far), and to powersupply contact pads PCB 259 and is coupled to theconnector 258 through traces located on thePCB 259. Theconnector 258 provides for an easy connection between theassembly 250 and the external operating system. - FIG. 8 illustrates an alternative embodiment in which an
assembly 290 includes aPCB 292 that is located in a plane that is generally perpendicular to the emitting surfaces ofarrays 30. Consequently, thearrays 30 are elevated slightly from a base 294 which attaches theassembly 290 to a heat exchanger. Again, theassembly 290 includes amemory device 296 and twosensors sensor 298 is a temperature sensor andsensor 297 is a photodetector. Each of thesensors memory device 296 are coupled to contactpads 299 at the end of thePCB 292 through traces (not shown) in thePCB 292. Theassembly 290 communicates with the external operating system through thesecontact pads 299. - FIG. 9 illustrates the
assembly 250 of FIG. 7 installed in the external operating system. Thus, asystem controller 300 is coupled to driveelectronics 302 which supply the electrical power needed to operate thediode arrays 30. Thesystem controller 300 is also coupled to achiller 304 which supplies the cooling fluid to the heat exchanger 252 (FIG. 7). Thesystem controller 300 receives operational information from thememory device 261 via theconnector 258. For example, the operational information received from thememory device 261 may inform thecontroller 300 that to obtain X watts of output power at 808 nanometers, the temperature at thetemperature sensor 262 must be 31° C. and the arrays must be driven at 110 amps with a rate of 30 Hz, and a pulse width of 220 microseconds. Thesystem controller 300 then causes thedrive electronics 302 to supply the requested input power and causes thechiller 304 to provide coolant at a rate and a temperature that will maintainsensor 262 at 31° C. - Although the cooling system has been described as a
chiller 304, the system could also be one which utilizes solid-state thermoelectric coolers such as those manufactured by Marlow Industries of Dallas, Tex. The cooling capacity of these devices varies as a function of the input power. Thus, thesystem controller 300 would control the electrical power to the thermoelectric coolers such that their cooling capacity would result in the desired temperature at thearrays 30. - The
controller 300 also may store in thememory device 261 operational conditions if the configuration of the memory device 241 allows for this information. Thus, thecontroller 300 could record to thememory device 261 extreme operating conditions (temperature, humidity, shock, vibration, the amount of on-time or the number of shots, etc.), extreme non-operating conditions (temperature, humidity, shock, vibration), extreme input powers (current, voltage, duty cycle, etc.), and fault conditions (coolant non-flow condition, electrostatic discharge, over-temperature fault, over-power fault, reverse-bias faults). Clearly, sensors (vibration sensors, shock sensors, humidity sensors, etc.) which measure these types of operating conditions would need to be incorporated onto the PCB or be adjacent theassembly 250 and monitored by thecontroller 300. - If a processor is used on the
assembly 250, then the processor may monitor these sensors instead of thecontroller 300 monitoring them. Additionally, a processor could monitor the output of theassembly 250 and provide real-time modifications to the instructions sent to thesystem controller 300. Thus, the basic operating information stored in thememory device 261 would serve as a starting point for operation and be modified based on the conditions sensed by the sensors and monitored by the processor. - FIG. 10 is a schematic illustrating a concept similar to what is shown in FIG. 9 except that the
external operating system 330 is coupled tomultiple assemblies operating system 330 then receives information from eachassembly assembly operating system 330 supplies coolant and input power at different levels to eachassembly operating system 330 may monitor sensors on theassemblies assemblies operating system 330 accordingly through the data interface lines. - The present invention is quite useful for numerous reasons. For example, one of the main factors affecting yield and, therefore, the cost of laser diode pump arrays, is selecting only laser diode bars within a small spectral range for incorporation into one array. There is a significant cost savings if it is possible to use pump arrays which have a larger range in their peak emission spectra, since the system control electronics will be able to compensate for the array's spectral differences by using the stored thermal and spectral (wavelength) information. Furthermore, storing the thermal/spectral data within the assembly considerably simplifies replacement of a used or damaged assembly by allowing for the automatic compensation for the new assembly by merely accessing this data within the assembly's memory device. There is no longer the need to build a replacement array that exactly matches the used or damaged array.
- Because the shot count or timer is integral with the assembly, rather than with the external control system electronics, the records are accurately maintained. And, a simplified way of recording significant events (faults, extreme conditions, etc.) is provided. Consequently, the need for meticulously recording this type of information on paper is obviated and, therefore, the integrity of the operational information on the array is greatly improved. Accessing this information from the memory device of the assembly is also useful for later analyzing the problems experience by the assembly.
- The safety features of the assembly are greatly improved by providing in-situ monitoring of such operating conditions such as the array's voltage, temperature, ambient humidity, and the occurrence of fault conditions. This information can be used to shutdown the assembly to avoid damage to the assembly or injury to the operator of the assembly.
- Each of these embodiments and obvious variations thereof is contemplated as falling within the spirit and scope of the invention, which is set forth in the following claims.
Claims (76)
Priority Applications (1)
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US09/923,754 US6385226B2 (en) | 1996-08-06 | 2001-08-06 | Smart laser diode array assembly |
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US09/691,768 US6272164B1 (en) | 1996-08-06 | 2000-10-18 | Smart laser diode array assembly |
US09/923,754 US6385226B2 (en) | 1996-08-06 | 2001-08-06 | Smart laser diode array assembly |
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US09/691,768 Continuation US6272164B1 (en) | 1996-08-06 | 2000-10-18 | Smart laser diode array assembly |
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US09/049,579 Expired - Lifetime US6144684A (en) | 1996-08-06 | 1998-03-27 | Smart laser diode array assembly |
US09/691,768 Expired - Lifetime US6272164B1 (en) | 1996-08-06 | 2000-10-18 | Smart laser diode array assembly |
US09/923,754 Expired - Lifetime US6385226B2 (en) | 1996-08-06 | 2001-08-06 | Smart laser diode array assembly |
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US09/049,579 Expired - Lifetime US6144684A (en) | 1996-08-06 | 1998-03-27 | Smart laser diode array assembly |
US09/691,768 Expired - Lifetime US6272164B1 (en) | 1996-08-06 | 2000-10-18 | Smart laser diode array assembly |
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- 1997-08-04 DE DE69710002T patent/DE69710002T2/en not_active Expired - Fee Related
- 1997-08-06 JP JP21229397A patent/JP3384950B2/en not_active Expired - Fee Related
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2000
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2001
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2005053122A1 (en) * | 2003-11-28 | 2005-06-09 | Osram Opto Semiconductors Gmbh | Heat sink for a pulsed laser diode bar with optimized thermal time constant |
US20070160097A1 (en) * | 2003-11-28 | 2007-07-12 | Osram Opto Semiconductors Gmbh | Heat sink for a pulsed laser diode bar with optimized thermal time constant |
EP1681750A1 (en) * | 2005-01-17 | 2006-07-19 | Fanuc Ltd | Laser oscillator and method of estimating the lifetime of a pump light source |
US20060159140A1 (en) * | 2005-01-17 | 2006-07-20 | Fanuc Ltd | Laser oscillator and method of estimating the lifetime of a pump light source |
Also Published As
Publication number | Publication date |
---|---|
US6272164B1 (en) | 2001-08-07 |
JPH10190134A (en) | 1998-07-21 |
JP2001203418A (en) | 2001-07-27 |
US6385226B2 (en) | 2002-05-07 |
US6144684A (en) | 2000-11-07 |
US5734672A (en) | 1998-03-31 |
EP0823759B1 (en) | 2002-01-23 |
IL121485A0 (en) | 1998-02-08 |
DE69710002D1 (en) | 2002-03-14 |
EP0823759A2 (en) | 1998-02-11 |
JP3384950B2 (en) | 2003-03-10 |
EP0823759A3 (en) | 1999-01-07 |
IL121485A (en) | 2000-07-26 |
DE69710002T2 (en) | 2002-07-18 |
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