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Publication numberUS20020000666 A1
Publication typeApplication
Application numberUS 09/386,789
Publication date3 Jan 2002
Filing date31 Aug 1999
Priority date31 Aug 1998
Also published asUS6388324
Publication number09386789, 386789, US 2002/0000666 A1, US 2002/000666 A1, US 20020000666 A1, US 20020000666A1, US 2002000666 A1, US 2002000666A1, US-A1-20020000666, US-A1-2002000666, US2002/0000666A1, US2002/000666A1, US20020000666 A1, US20020000666A1, US2002000666 A1, US2002000666A1
InventorsMichael N. Kozicki
Original AssigneeMichael N. Kozicki
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Self-repairing interconnections for electrical circuits
US 20020000666 A1
Abstract
A self-repairing interconnection system and methods for forming the system are disclosed. The system includes a metal pathway adjacent a metal-doped chalcogenide material. The system is configured to repair defects in the metal pathway by donating metallic ions from the metal-doped chalcogenide material to the metal pathway.
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Claims(2)
I claim:
1. A self-healing interconnect system comprising:
a metal interconnection pathway; and
a metal-doped chalcogenide material adjacent said metal interconnection pathway.
2. A method of forming a self-healing interconnect system, said method comprising of steps of:
forming a metal-doped chalcogenide material; and
forming metal pathways adjacent said metal doped chalcogenide material.
Description
    RELATED APPLICATIONS
  • [0001]
    This application claims the benefit of pending Provisional Application Ser. No. 60/098,609, filed Aug. 31, 1998.
  • TECHNICAL FIELD
  • [0002]
    The present invention generally relates to methods and apparatus for forming self-repairing interconnections for electrical circuits. More particularly, the present invention relates to an interconnection system using metal-doped chalcogenide material in contact with metal interconnections which heal defects in the metal interconnections.
  • BACKGROUND
  • [0003]
    The performance and cost of electronic systems have improved continuously due in part to advances in manufacturing progressively smaller electronic devices. Advances in semiconductor technology have resulted in a tremendous reduction in the feature sizes of electronic devices, thereby increasing the density of electrical circuits. In fact, over the past two decades, the density of components which can be located on a single microchip has increased by a factor of 100 per decade.
  • [0004]
    As the density of components has increased, so has the requirement for the density of interconnection pathways formed between these components. In order to increase the density of interconnection pathways, the size of interconnections must be reduced. Small geometry interconnections, however, are highly prone to failure by electromigration at points where the lines have a reduced cross-section due to thinning at topographical features (e.g., an underlying step), line narrowing by reflective notching during a photolithography step, and morphological effects such as width variations at grain boundaries after etching. The ultimate quality and reliability of many electronic systems are determined largely by the reliability of the interconnection system.
  • [0005]
    To mitigate problems associated with high density devices and increase device reliability, metal lines are desirably designed or made wider than the minimum lithographical line width, preferably by a factor of two or more, to reduce current density at the thin regions of the lines and thereby reduce electromigration. Manufacturing devices with wider lines, however, reduces the overall interconnection density for the devices.
  • [0006]
    Therefore, interconnections capable of healing defects and/or breaks in interconnection pathways are highly desirable to thereby increase overall system reliability.
  • SUMMARY OF THE INVENTION
  • [0007]
    The present invention relates to methods and apparatus for forming self-healing interconnections for electrical circuits. In accordance with an exemplary embodiment of the present invention, an interconnection metal (e.g., copper, silver, and the like) is deposited on a layer of metal-doped chalcogenide material. When breaks occur in the interconnection metal, the break is healed (i.e., filled in) by the formation of a metal element formed by metal precipitation at the break.
  • BRIEF DESCRIPTION OF THE DRAWING FIGURES
  • [0008]
    The present invention will hereinafter be described in conjunction with the appended drawing figures, wherein like numerals denote like elements, and:
  • [0009]
    [0009]FIG. 1 is a sectional schematic illustration of a multi-level interconnection system in accordance with one aspect of the present invention; and
  • [0010]
    FIGS. 2A-2C are schematic depictions of a break and healing process in an interconnection pathway in accordance with the present invention.
  • DETAILED DESCRIPTION OF THE INVENTION
  • [0011]
    In order to provide a more thorough understanding of the present invention, the following description sets forth numerous specific details, such as specific material, parameters, etc. However, these specific details need not be employed to practice the present invention.
  • [0012]
    With reference to FIG. 1, a multi-level self-healing interconnect system 10 in accordance with a preferred embodiment of the present invention is shown. In accordance with one aspect of the present invention, interconnection system 10 includes a plurality of metal interconnection pathways 18 in contact with a metal-doped chalcogenide material 12, dielectric separation layers 14, and vias 16.
  • [0013]
    In accordance with one aspect of the present invention, a suitable metal-doped chalcogenide material includes any compound containing sulfur, selenium and/or tellurium, whether ternary, quaternary or higher compounds. In a preferred embodiment of the present invention, the chalcogenide material is selected from the group consisting of arsenic, germanium, selenium, tellurium, bismuth, nickel, sulfur, polonium and zinc (preferably, arsenic sulphide, germanium sulfide, or germanium selenide) and the metal comprises various Group I or Group II metals (preferably, silver, copper, zinc or a combination thereof). The metal-doped chalcogenide material may be obtained by photo dissolution, by depositing from a source comprising the metal and chalcogenide material, or by other means known in the art. For a more detailed discussion of metal-doped chalcogenide material, see U.S. Pat. No. 5,761,115, issued on Jun. 2, 1998 to Kozicki et al, the entire disclosure of which is incorporated herein by reference.
  • [0014]
    In an exemplary embodiment, chalcogenide material 12 is doped with silver or copper. In accordance with this embodiment, metal pathways 18 are also formed from silver or copper. However, any conductive material may be used as long as there are no adverse reaction between the conductor and the chalcogenide material.
  • [0015]
    In accordance with one aspect of the present invention, metal pathways 18 are deposited on and in contact with chalcogenide material 12 using any convenient deposition method. Although in FIG. 1 metal pathways 18 are depicted above chalcogenide material 12, metal pathways 18 can be deposited beneath or completely within chalcogenide material 12. Additionally, vias 14 are preferably kept free of the metal-doped chalcogenide material to minimize the resistance of the connection between interconnect layers.
  • [0016]
    With reference to FIG. 2A, a defect in a conductor pathway 22 can result from thinning at topographical features (e.g., an underlying step), line narrowing by reflective notching during a photolithography step, morphological effects such as width variations at grain boundaries after etch, and the like. With additional reference to FIG. 2B, as a weak region 23 in conductor pathway 22 becomes thinner (e.g., by electromigration), pathway 22 resistance increases, thereby also increasing the voltage drop across pathway 22. With additional reference to FIG. 2C, this potential difference creates an electric field which moves dissolved metal ions from metal-doped chalcogenide material 24 to the most electrically negative part of the defect, whereupon the metal ions will come out of solution and form a solid metal element 26 (e.g., a dendrite) at the surface of chalcogenide material 24. Metal element 26 will grow until the defect is bridged (i.e., returned to a low resistance state). Although metal element 26 is depicted in FIG. 2C as substantially oval, metal element 26 may assume any suitable shape.
  • [0017]
    In this manner, defects and breaks in interconnection pathways can be repaired in-situ. Additionally, as described above, this repair mechanism is self-regulating as it will only operate when the defect resistance becomes high and will turn-off when the repair is complete. Accordingly, the present self-healing interconnection system provides for increased system reliability.
  • [0018]
    While preferred embodiments of the present invention have been shown in the drawings and described above, it will be apparent to one skilled in the art that various embodiments of the present invention are possible. For example, the present invention may be used to cure interconnection pathways in 3-dimensional circuits or any semiconductor or integrated circuit application. Therefore, the present invention should not be construed as limited to the specific form shown and described above.
Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US66388208 Feb 200128 Oct 2003Micron Technology, Inc.Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
US664690230 Aug 200111 Nov 2003Micron Technology, Inc.Method of retaining memory state in a programmable conductor RAM
US66531938 Dec 200025 Nov 2003Micron Technology, Inc.Resistance variable device
US670988731 Oct 200123 Mar 2004Micron Technology, Inc.Method of forming a chalcogenide comprising device
US670995830 Aug 200123 Mar 2004Micron Technology, Inc.Integrated circuit device and fabrication using metal-doped chalcogenide materials
US671042323 Aug 200223 Mar 2004Micron Technology, Inc.Chalcogenide comprising device
US67271921 Mar 200127 Apr 2004Micron Technology, Inc.Methods of metal doping a chalcogenide material
US67305471 Nov 20024 May 2004Micron Technology, Inc.Integrated circuit device and fabrication using metal-doped chalcogenide materials
US67315283 May 20024 May 2004Micron Technology, Inc.Dual write cycle programmable conductor memory system and method of operation
US673445515 Mar 200111 May 2004Micron Technology, Inc.Agglomeration elimination for metal sputter deposition of chalcogenides
US673731227 Aug 200118 May 2004Micron Technology, Inc.Method of fabricating dual PCRAM cells sharing a common electrode
US67377263 Oct 200218 May 2004Micron Technology, Inc.Resistance variable device, analog memory device, and programmable memory cell
US675111428 Mar 200215 Jun 2004Micron Technology, Inc.Method for programming a memory cell
US678401829 Aug 200131 Aug 2004Micron Technology, Inc.Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
US679185920 Nov 200114 Sep 2004Micron Technology, Inc.Complementary bit PCRAM sense amplifier and method of operation
US679188519 Feb 200214 Sep 2004Micron Technology, Inc.Programmable conductor random access memory and method for sensing same
US68005041 Nov 20025 Oct 2004Micron Technology, Inc.Integrated circuit device and fabrication using metal-doped chalcogenide materials
US680936220 Feb 200226 Oct 2004Micron Technology, Inc.Multiple data state memory cell
US68120876 Aug 20032 Nov 2004Micron Technology, Inc.Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures
US68131765 Nov 20032 Nov 2004Micron Technology, Inc.Method of retaining memory state in a programmable conductor RAM
US681317812 Mar 20032 Nov 2004Micron Technology, Inc.Chalcogenide glass constant current device, and its method of fabrication and operation
US68184817 Mar 200116 Nov 2004Micron Technology, Inc.Method to manufacture a buried electrode PCRAM cell
US68251356 Jun 200230 Nov 2004Micron Technology, Inc.Elimination of dendrite formation during metal/chalcogenide glass deposition
US683355912 Sep 200321 Dec 2004Micron Technology, Inc.Non-volatile resistance variable device
US683830714 Jul 20034 Jan 2005Micron Technology, Inc.Programmable conductor memory cell structure and method therefor
US684753520 Feb 200225 Jan 2005Micron Technology, Inc.Removable programmable conductor memory card and associated read/write device and method of operation
US688162329 Aug 200119 Apr 2005Micron Technology, Inc.Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
US691214728 Jun 200428 Jun 2005Micron Technology, Inc.Chalcogenide glass constant current device, and its method of fabrication and operation
US703040522 Jan 200418 Apr 2006Micron Technology, Inc.Method and apparatus for resistance variable material cells
US70503193 Dec 200323 May 2006Micron Technology, Inc.Memory architecture and method of manufacture and operation thereof
US706734816 Apr 200427 Jun 2006Micron Technology, Inc.Method of forming a programmable memory cell and chalcogenide structure
US710215011 May 20015 Sep 2006Harshfield Steven TPCRAM memory cell and method of making same
US712617916 Jan 200424 Oct 2006Micron Technology, Inc.Memory cell intermediate structure
US713267527 Feb 20047 Nov 2006Micron Technology, Inc.Programmable conductor memory cell structure and method therefor
US71391883 Feb 200621 Nov 2006Micron Technology, Inc.Memory architecture and method of manufacture and operation thereof
US715127312 Apr 200219 Dec 2006Micron Technology, Inc.Silver-selenide/chalcogenide glass stack for resistance variable memory
US731546513 Jan 20051 Jan 2008Micro Technology, Inc.Methods of operating and forming chalcogenide glass constant current devices
US738264617 Oct 20063 Jun 2008Micron Technology, Inc.Memory architecture containing a high density memory array of semi-volatile or non-volatile memory elements
US74108637 Sep 200612 Aug 2008Micron Technology, Inc.Methods of forming and using memory cell structures
US741181215 Sep 200612 Aug 2008Micron Technology, Inc.Memory architecture and method of manufacture and operation thereof
US748955128 Apr 200810 Feb 2009Micron Technology, Inc.Memory architecture and method of manufacture and operation thereof
US754231917 Jan 20072 Jun 2009Micron Technology, Inc.Chalcogenide glass constant current device, and its method of fabrication and operation
US764600724 Oct 200612 Jan 2010Micron Technology, Inc.Silver-selenide/chalcogenide glass stack for resistance variable memory
US766313315 Nov 200616 Feb 2010Micron Technology, Inc.Memory elements having patterned electrodes and method of forming the same
US766313721 Dec 200716 Feb 2010Micron Technology, Inc.Phase change memory cell and method of formation
US766800025 Jun 200723 Feb 2010Micron Technology, Inc.Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US768299220 May 200823 Mar 2010Micron Technology, Inc.Resistance variable memory with temperature tolerant materials
US768779322 May 200730 Mar 2010Micron Technology, Inc.Resistance variable memory cells
US76921775 Jul 20066 Apr 2010Micron Technology, Inc.Resistance variable memory element and its method of formation
US770042225 Oct 200620 Apr 2010Micron Technology, Inc.Methods of forming memory arrays for increased bit density
US770176012 Sep 200820 Apr 2010Micron Technology, Inc.Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US770928922 Apr 20054 May 2010Micron Technology, Inc.Memory elements having patterned electrodes and method of forming the same
US770988513 Feb 20074 May 2010Micron Technology, Inc.Access transistor for memory device
US772371331 May 200625 May 2010Micron Technology, Inc.Layered resistance variable memory device and method of fabrication
US774580828 Dec 200729 Jun 2010Micron Technology, Inc.Differential negative resistance memory
US774985311 Jan 20086 Jul 2010Microntechnology, Inc.Method of forming a variable resistance memory device comprising tin selenide
US775966521 Feb 200720 Jul 2010Micron Technology, Inc.PCRAM device with switching glass layer
US776886122 Jun 20093 Aug 2010Micron Technology, Inc.Software refreshed memory device and method
US778597628 Feb 200831 Aug 2010Micron Technology, Inc.Method of forming a memory device incorporating a resistance-variable chalcogenide element
US779105825 Jun 20097 Sep 2010Micron Technology, Inc.Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US786359724 Jan 20084 Jan 2011Micron Technology, Inc.Resistance variable memory devices with passivating material
US786924911 Mar 200811 Jan 2011Micron Technology, Inc.Complementary bit PCRAM sense amplifier and method of operation
US787964631 Jan 20081 Feb 2011Micron Technology, Inc.Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance
US791039713 Nov 200622 Mar 2011Micron Technology, Inc.Small electrode for resistance variable devices
US79246034 Feb 201012 Apr 2011Micron Technology, Inc.Resistance variable memory with temperature tolerant materials
US794055616 Mar 201010 May 2011Micron Technology, Inc.Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US794476828 Jun 201017 May 2011Micron Technology, Inc.Software refreshed memory device and method
US796443610 Oct 200821 Jun 2011Round Rock Research, LlcCo-sputter deposition of metal-doped chalcogenides
US796892715 Mar 201028 Jun 2011Micron Technology, Inc.Memory array for increased bit density and method of forming the same
US797850015 Jan 201012 Jul 2011Micron Technology, Inc.Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US799449121 Feb 20079 Aug 2011Micron Technology, Inc.PCRAM device with switching glass layer
US80306362 Aug 20104 Oct 2011Micron Technology, Inc.Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US80808163 Dec 200920 Dec 2011Micron Technology, Inc.Silver-selenide/chalcogenide glass stack for resistance variable memory
US810193620 Nov 200724 Jan 2012Micron Technology, Inc.SnSe-based limited reprogrammable cell
US818936613 Jun 201129 May 2012Micron Technology, Inc.Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US826395830 Apr 201011 Sep 2012Micron Technology, Inc.Layered resistance variable memory device and method of fabrication
US833418621 Jun 201018 Dec 2012Micron Technology, Inc.Method of forming a memory device incorporating a resistance variable chalcogenide element
US846644523 Nov 201118 Jun 2013Micron Technology, Inc.Silver-selenide/chalcogenide glass stack for resistance variable memory and manufacturing method thereof
US846723621 Oct 201018 Jun 2013Boise State UniversityContinuously variable resistor
US848728818 Jul 201116 Jul 2013Micron Technology, Inc.Memory device incorporating a resistance variable chalcogenide element
US86111369 May 201217 Dec 2013Micron Technology, Inc.Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US86194856 Feb 200931 Dec 2013Round Rock Research, LlcPower management control and controlling memory refresh operations
US865290324 Mar 201018 Feb 2014Micron Technology, Inc.Access transistor for memory device
US889540114 Sep 201225 Nov 2014Micron Technology, Inc.Method of forming a memory device incorporating a resistance variable chalcogenide element
US914226324 Dec 201322 Sep 2015Round Rock Research, LlcPower management control and controlling memory refresh operations
US955298615 Apr 201424 Jan 2017Micron Technology, Inc.Forming a memory device using sputtering to deposit silver-selenide film
US20020116955 *19 Feb 200229 Aug 2002Sumitomo Electric Industries, Ltd.Method of forming soot preform
US20030027416 *1 Aug 20016 Feb 2003Moore John T.Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
US20030043896 *29 Aug 20026 Mar 2003Koninklijke Philips Electronics N.V.Device for and method of determining the quality of a data signal
US20030045049 *29 Aug 20016 Mar 2003Campbell Kristy A.Method of forming chalcogenide comprising devices
US20030045054 *29 Aug 20016 Mar 2003Campbell Kristy A.Method of forming non-volatile resistance variable devices, method of forming a programmable memory cell of memory circuitry, and a non-volatile resistance variable device
US20030047772 *28 Oct 200213 Mar 2003Jiutao LiAgglomeration elimination for metal sputter deposition of chalcogenides
US20030117831 *20 Dec 200126 Jun 2003Glen HushProgrammable conductor random access memory and a method for writing thereto
US20030146427 *3 Feb 20037 Aug 2003Campbell Kristy A.Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
US20030155589 *12 Apr 200221 Aug 2003Campbell Kristy A.Silver-selenide/chalcogenide glass stack for resistance variable memory
US20030155606 *15 Feb 200221 Aug 2003Campbell Kristy A.Method to alter chalcogenide glass for improved switching characteristics
US20030156463 *19 Feb 200221 Aug 2003Casper Stephen L.Programmable conductor random access memory and method for sensing same
US20030156468 *20 Feb 200221 Aug 2003Campbell Kristy A.Resistance variable 'on' memory
US20030173558 *14 Mar 200218 Sep 2003Campbell Kristy A.Methods and apparatus for resistance variable material cells
US20030193053 *10 Apr 200216 Oct 2003Gilton Terry L.Thin film diode integrated with chalcogenide memory cell
US20030193059 *10 Apr 200216 Oct 2003Gilton Terry L.Programmable conductor memory cell structure and method therefor
US20030206433 *3 May 20026 Nov 2003Glen HushDual write cycle programmable conductor memory system and method of operation
US20030228717 *6 Jun 200211 Dec 2003Jiutao LiCo-sputter deposition of metal-doped chalcogenides
US20040007718 *26 Jun 200315 Jan 2004Campbell Kristy A.Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
US20040029351 *6 Aug 200312 Feb 2004Gilton Terry L.Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures
US20040038432 *14 Jul 200326 Feb 2004Micron Technology, Inc.Programmable conductor memory cell structure and method therefor
US20040038480 *22 Aug 200226 Feb 2004Moore John T.Method of manufacture of a PCRAM memory cell
US20040040835 *29 Aug 20024 Mar 2004Jiutao LiSilver selenide film stoichiometry and morphology control in sputter deposition
US20040040837 *29 Aug 20024 Mar 2004Mcteer AllenMethod of forming chalcogenide sputter target
US20040042259 *29 Aug 20024 Mar 2004Campbell Kristy A.Single polarity programming of a pcram structure
US20040043245 *29 Aug 20024 Mar 2004Moore John T.Method to control silver concentration in a resistance variable memory element
US20040043553 *29 Aug 20034 Mar 2004Jiutao LiElimination of dendrite formation during metal/chalcogenide glass deposition
US20040044841 *29 Aug 20024 Mar 2004Gilton Terry L.Software refreshed memory device and method
US20040124406 *17 Dec 20031 Jul 2004Campbell Kristy A.Method of forming non-volatile resistance variable devices, method of forming a programmable memory cell of memory circuitry, and a non-volatile resistance variable device
US20040144968 *16 Jan 200429 Jul 2004Jiutao LiAgglomeration elimination for metal sputter deposition of chalcogenides
US20040144973 *16 Jan 200429 Jul 2004Jiutao LiAgglomeration elimination for metal sputter deposition of chalcogenides
US20040157417 *3 Feb 200412 Aug 2004Moore John T.Methods to form a memory cell with metal-rich metal chalcogenide
US20040171208 *3 Mar 20042 Sep 2004Gilton Terry L.Method of manufacture of programmable conductor memory
US20040175859 *16 Mar 20049 Sep 2004Campbell Kristy A.Single polarity programming of a PCRAM structure
US20040179390 *12 Mar 200316 Sep 2004Campbell Kristy A.Chalcogenide glass constant current device, and its method of fabrication and operation
US20040180533 *14 Mar 200316 Sep 2004Li LiMethod for filling via with metal
US20040191961 *16 Apr 200430 Sep 2004Campbell Kristy A.Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry
US20040192006 *7 Apr 200430 Sep 2004Campbell Kristy A.Layered resistance variable memory device and method of fabrication
US20040202016 *10 Apr 200314 Oct 2004Campbell Kristy A.Differential negative resistance memory
US20040223357 *10 Jun 200411 Nov 2004Gilton Terry L.Multiple data state memory cell
US20040223390 *14 Jun 200411 Nov 2004Campbell Kristy A.Resistance variable memory element having chalcogenide glass for improved switching characteristics
US20040229423 *23 Jun 200418 Nov 2004Moore John T.Electrode structure for use in an integrated circuit
US20040232551 *24 Jun 200425 Nov 2004Moore John T.Electrode structure for use in an integrated circuit
US20040233728 *28 Jun 200425 Nov 2004Campbell Kristy A.Chalcogenide glass constant current device, and its method of fabrication and operation
US20040235235 *29 Jun 200425 Nov 2004Jiutao LiCo-sputter deposition of metal-doped chalcogenides
US20040238918 *9 Jul 20042 Dec 2004Moore John T.Method of manufacture of a PCRAM memory cell
US20040238958 *23 Jun 20042 Dec 2004Moore John T.Electrode structure for use in an integrated circuit
US20050017233 *21 Jul 200327 Jan 2005Campbell Kristy A.Performance PCRAM cell
US20050018493 *16 Aug 200427 Jan 2005Casper Stephen L.Programmable conductor random access memory and method for sensing same
US20050018509 *14 Jun 200427 Jan 2005Glen HushComplementary bit resistance memory sensor and method of operation
US20050019699 *18 Aug 200427 Jan 2005Moore John T.Non-volatile resistance variable device
US20050026433 *22 Jun 20043 Feb 2005Jiutao LiIntegrated circuit device and fabrication using metal-doped chalcogenide materials
US20050054207 *2 Sep 200410 Mar 2005Micron Technology, Inc.Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
US20050056910 *17 Sep 200317 Mar 2005Gilton Terry L.Non-volatile memory structure
US20050098428 *16 Dec 200412 May 2005Jiutao LiSilver selenide film stoichiometry and morphology control in sputter deposition
US20050101084 *6 Dec 200412 May 2005Gilton Terry L.Thin film diode integrated with chalcogenide memory cell
US20050122757 *3 Dec 20039 Jun 2005Moore John T.Memory architecture and method of manufacture and operation thereof
US20050133778 *13 Jan 200523 Jun 2005Campbell Kristy A.Chalcogenide glass constant current device, and its method of fabrication and operation
US20050146958 *3 Mar 20057 Jul 2005John MooreRewrite prevention in a variable resistance memory
US20050157567 *16 Mar 200521 Jul 2005Gilton Terry L.Multiple data state memory cell
US20050157573 *21 Mar 200521 Jul 2005Campbell Kristy A.Method of forming non-volatile resistance variable devices
US20050162883 *25 Aug 200428 Jul 2005Hasan NejadColumnar 1T-nMemory cell structure and its method of formation and operation
US20050201174 *10 Mar 200415 Sep 2005Klein Dean A.Power management control and controlling memory refresh operations
US20050202588 *10 Mar 200415 Sep 2005Brooks Joseph F.Method of forming a chalcogenide material containing device
US20050219901 *3 Jun 20056 Oct 2005Gilton Terry LNon-volatile memory structure
US20050247927 *14 Jul 200510 Nov 2005Campbell Kristy AAssemblies displaying differential negative resistance
US20060011910 *7 Jun 200519 Jan 2006Micron Technology, Inc.PCRAM device with switching glass layer
US20060012008 *19 Jul 200419 Jan 2006Campbell Kristy AResistance variable memory device and method of fabrication
US20060023532 *28 Sep 20052 Feb 2006Glen HushMethod of operating a complementary bit resistance memory sensor
US20060033094 *12 Aug 200416 Feb 2006Campbell Kristy AResistance variable memory with temperature tolerant materials
US20060035403 *12 Aug 200416 Feb 2006Campbell Kristy APCRAM device with switching glass layer
US20060044906 *1 Sep 20042 Mar 2006Ethan WillifordSensing of resistance variable memory devices
US20060099822 *14 Dec 200511 May 2006Harshfield Steven TMethod of making a memory cell
US20060104142 *28 Nov 200518 May 2006Gilton Terry LSoftware refreshed memory device and method
US20060126370 *3 Feb 200615 Jun 2006Moore John TMemory architecture and method of manufacture and operation thereof
US20060131555 *22 Dec 200422 Jun 2006Micron Technology, Inc.Resistance variable devices with controllable channels
US20060131556 *22 Dec 200422 Jun 2006Micron Technology, Inc.Small electrode for resistance variable devices
US20060171224 *31 Mar 20063 Aug 2006Hasan Nejad1T-nmemory cell structure and its method of formation and operation
US20060231824 *14 Jun 200619 Oct 2006Campbell Kristy AResistance variable memory with temperature tolerant materials
US20060234425 *9 May 200619 Oct 2006Micron Technology, Inc.Method of manufacture of a PCRAM memory cell
US20060237707 *22 Apr 200526 Oct 2006Micron Technology, Inc.Memory array for increased bit density and method of forming the same
US20060243973 *29 Jun 20062 Nov 2006Micron Technology, Inc.Thin film diode integrated with chalcogenide memory cell
US20060245234 *28 Jun 20062 Nov 2006Glen HushMethod of operating a complementary bit resistance memory sensor and method of operation
US20060246696 *28 Jun 20062 Nov 2006Micron Technology, Inc.Method of forming a chalcogenide material containing device
US20060252176 *5 Jul 20069 Nov 2006Micron Technology, Inc.Memory element and its method of formation
US20060256640 *16 May 200516 Nov 2006Micron Technology, Inc.Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
US20060270099 *9 May 200630 Nov 2006Micron Technology, Inc.Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry
US20060285381 *23 Jun 200621 Dec 2006Ethan WillifordSensing of resistance variable memory devices
US20060289851 *29 Aug 200628 Dec 2006Campbell Kristy AResistance variable memory device and method of fabrication
US20070007506 *31 May 200611 Jan 2007Micron Technology, Inc.Layered resistance variable memory device and method of fabrication
US20070008761 *15 Sep 200611 Jan 2007Moore John TMemory architecture and method of manufacture and operation thereof
US20070008768 *8 Jul 200511 Jan 2007Micron Technology, Inc.Process for erasing chalcogenide variable resistance memory bits
US20070023744 *1 Aug 20051 Feb 2007Micron Technology, Inc.Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US20070029537 *2 Aug 20058 Feb 2007Micron Technology, Inc.Phase change memory cell and method of formation
US20070030554 *2 Aug 20058 Feb 2007Micron Technology, Inc.Method and apparatus for providing color changing thin film material
US20070034921 *9 Aug 200515 Feb 2007Micron Technology, Inc.Access transistor for memory device
US20070035041 *7 Sep 200615 Feb 2007Li LiMethods of forming and using memory cell structures
US20070035990 *15 Aug 200515 Feb 2007Micron Technology, Inc.Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US20070037316 *9 Aug 200515 Feb 2007Micron Technology, Inc.Memory cell contact using spacers
US20070047297 *31 Aug 20051 Mar 2007Campbell Kristy AResistance variable memory element with threshold device and method of forming the same
US20070059882 *15 Nov 200615 Mar 2007Micron Technology, Inc.Memory elements having patterned electrodes and method of forming the same
US20070064474 *20 Nov 200622 Mar 2007Micron Technology, Inc.Resistance variable memory element with threshold device and method of forming the same
US20070090354 *11 Aug 200526 Apr 2007Micron Technology, Inc.Chalcogenide-based electrokinetic memory element and method of forming the same
US20070091666 *17 Oct 200626 Apr 2007Moore John TMemory architecture and method of manufacture and operation thereof
US20070102691 *24 Oct 200610 May 2007Campbell Kristy ASilver-selenide/chalcogenide glass stack for resistance variable memory
US20070104010 *22 Dec 200610 May 2007Micron Technology, Inc.Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
US20070128792 *31 Jan 20077 Jun 2007Micron Technology, Inc.Multiple data state memory cell
US20070138598 *1 Feb 200721 Jun 2007Campbell Kristy AResistance variable memory device and method of fabrication
US20070145463 *21 Feb 200728 Jun 2007Campbell Kristy APCRAM device with switching glass layer
US20070152204 *21 Feb 20075 Jul 2007Campbell Kristy APCRAM device with switching glass layer
US20070166983 *13 Nov 200619 Jul 2007Micron Technology, Inc.Small electrode for resistance variable devices
US20070201255 *17 Jan 200730 Aug 2007Micron Technology, Inc.Chalcogenide glass constant current device, and its method of fabrication and operation
US20070235712 *22 May 200711 Oct 2007Harshfield Steven TResistance variable memory cells
US20070247895 *25 Jun 200725 Oct 2007Glen HushMethod and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US20070258308 *30 May 20078 Nov 2007Gilton Terry LSoftware refreshed memory device and method
US20080093589 *22 Dec 200624 Apr 2008Micron Technology, Inc.Resistance variable devices with controllable channels
US20080128674 *28 Dec 20075 Jun 2008Campbell Kristy ADifferential negative resistance memory
US20080142773 *21 Dec 200719 Jun 2008Micron Technology, Inc.Phase change memory cell and method of formation
US20080185574 *24 Jan 20087 Aug 2008Campbell Kristy AMethod of forming non-volatile resistance variable devices
US20080188034 *31 Jan 20087 Aug 2008Campbell Kristy AAssemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance
US20080210921 *28 Feb 20084 Sep 2008Jiutao LiSilver selenide film stoichiometry and morphology control in sputter deposition
US20080225579 *28 Apr 200818 Sep 2008Moore John TMemory architecture and method of manufacture and operation thereof
US20080310208 *7 May 200718 Dec 2008Jon DaleyProcess for erasing chalcogenide variable resistance memory bits
US20090078925 *12 Sep 200826 Mar 2009Campbell Kristy AResistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US20090098717 *10 Oct 200816 Apr 2009Jiutao LiCo-sputter deposition of metal-doped chalcogenides
US20090147608 *6 Feb 200911 Jun 2009Klein Dean APower management control and controlling memory refresh operations
US20090257299 *22 Jun 200915 Oct 2009Gilton Terry LSoftware refreshed memory device and method
US20090261316 *25 Jun 200922 Oct 2009Jun LiuEnhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US20100133499 *4 Feb 20103 Jun 2010Campbell Kristy AResistance variable memory with temperature tolerant materials
US20100140579 *3 Dec 200910 Jun 2010Campbell Kristy ASilver-selenide/chalcogenide glass stack for resistance variable memory
US20100171088 *16 Mar 20108 Jul 2010Campbell Kristy AResistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US20100171091 *15 Mar 20108 Jul 2010Jon DaleyMemory array for increased bit density and method of forming the same
US20100178741 *24 Mar 201015 Jul 2010Jon DaleyAccess transistor for memory device
US20100219391 *30 Apr 20102 Sep 2010Campbell Kristy ALayered resistance variable memory device and method of fabrication
US20100262791 *28 Jun 201014 Oct 2010Gilton Terry LSoftware refreshed memory device and method
US20110037558 *21 Oct 201017 Feb 2011Boise State UniversityContinuously variable resistor
Classifications
U.S. Classification257/758, 257/E23.146, 257/E23.154
International ClassificationH01L23/525, H01L23/532
Cooperative ClassificationH01L2924/0002, H01L23/532, H01L23/525
European ClassificationH01L23/532, H01L23/525
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