US20010042690A1 - Method and apparatus for electroplating and electropolishing - Google Patents
Method and apparatus for electroplating and electropolishing Download PDFInfo
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- US20010042690A1 US20010042690A1 US09/738,561 US73856100A US2001042690A1 US 20010042690 A1 US20010042690 A1 US 20010042690A1 US 73856100 A US73856100 A US 73856100A US 2001042690 A1 US2001042690 A1 US 2001042690A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
- B23H5/08—Electrolytic grinding
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/04—Electroplating with moving electrodes
- C25D5/06—Brush or pad plating
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/22—Electroplating combined with mechanical treatment during the deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
- C25D5/611—Smooth layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/615—Microstructure of the layers, e.g. mixed structure
- C25D5/617—Crystalline layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/627—Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Definitions
- the present invention relates to a Method and Apparatus for Electro Chemical Mechanical Deposition, and more particularly, to a method and apparatus that provides for both the deposition and polishing of a conductive material on a semiconductor wafer.
- Metallization of semiconductor wafers i.e. deposition of a layer of metal on the face of wafers over a barrier/seed layer of metal has important and broad application in the semiconductor industry.
- aluminum and other metals are deposited as one of many metal layers that make up a semiconductor chip.
- copper reduces electrical resistance and allows semiconductor chips using copper to run faster with less heat generation, resulting in a significant gain in chip capacity and efficiency.
- One of the factors that contributes to the high cost is the manner in which the conductive material, and particularly copper, is applied.
- certain contaminants known as leveling agents, in the electrolyte solution that prevent or slow down the rate of deposition of the metal to the surface of the wafer substrate. Since these contaminants have a large size in comparison to the size of the typical via that needs to be filled, deposition of the metal on the surface of the wafer is, in part, prevented.
- This prevention is achieved at the expense of adding contaminants to the electrolytic solution, which results, in part, in vias that do not have the desired conductive characteristics.
- the grain size of the deposited conductor due to the use of such contaminants, is not as large as desired, which thereby results in quality problems for the resulting device, as well as increased expense due to significant annealing times that are subsequently required.
- polishing step which polishing step is, for high performance devices at the present time, typically a chemical-mechanical polishing step. While chemical mechanical polishing achieves the desired result, it achieves it at considerable expense, and requires a great degree of precision in applying a slurry in order to achieve the desired high degree of polish on the conductive surface.
- These and other object of the present invention are obtained by depositing a conductive material from an electrolyte solution to a predetermined area of a wafer.
- the steps that are used when making this application include applying the conductive material to the predetermined area of the wafer using an electrolyte solution disposed on a surface of the wafer, when the wafer is disposed in proximity to an anode, and preventing accumulation of the conductive material to areas other than the predetermined area by mechanically polishing, protecting, or reducing from electrolyte contact to the other areas while the conductive material is being deposited.
- An apparatus that performs this method includes an anode capable of receiving a first potential upon application of power.
- a cathode or the wafer is spaced from the anode and is capable of receiving a second potential opposite the first potential upon application of power.
- a pad or a multiple number of pads is/are disposed between the anode and the cathode, the pad being movable with respect to a surface of the wafer and inhibiting or reducing application of the conductive material to certain other areas when power is being supplied to the anode and the cathode.
- a fluid chamber allows an electrolyte solution to be disposed on the surface of the wafer or the pad and the conductive material to be formed on desired areas of the wafer upon application of power.
- FIGS. 1A and 1B illustrate a first embodiment of the present invention
- FIG. 2 illustrates a second embodiment of the present invention
- FIG. 3 illustrates a representative via to be filled with a conductor according to the present invention
- FIGS. 4 A- 4 C illustrate a third embodiment of the present invention.
- the present invention contemplates different embodiments which allow for the same device, termed a “electro chemical mechanical deposition apparatus”, to be used to both deposit a conductive material, as well as then polish or reduce the rate of deposition of that conductive material.
- the “electro chemical mechanical deposition apparatus” can also be used to simultaneously deposit and/or polish the conductive material. While the present invention can be used with any conductive material, it is especially suited for use with copper as the conductor, and for use in the fabrication of ULSI integrated circuits having submicron features with large aspect ratios.
- the present invention uses conventional components, arranged in a unique manner, in order to achieve the functionalities described herein.
- FIG. 3 is first referred to in order to illustrate a portion of an integrated circuit chip that includes an area in which a via is to be formed.
- the via as known in the semiconductor arts, being a conductive material that electrically connects different circuit layers together.
- a via contains a conductor 2 that can connect a lower level conductive area 4 with an upper level conductive area 6 , with insulative material 8 disposed therearound.
- the present invention can operate upon any metal layer of a multi-layer integrated circuit chip.
- FIGS. 1A and 1B illustrate a first embodiment of the invention, which embodiment has two different modes of operation.
- a conductive metal preferably copper, or other conductive material
- an electrolyte solution preferably aluminum, or other conductive material
- polishing of the wafer using a conventional chemical mechanical polishing, can be performed using the same device, to the extent that such chemical mechanical polishing is needed. It is contemplated that according to this embodiment of the present invention that in most circumstances only the first mode of operation will be needed.
- the second mode of operation, and the structure corresponding thereto, are included for circumstances in which an extremely high degree of polish is desired.
- FIG. 1A illustrates an overview of the electro chemical mechanical deposition apparatus 10 according to the first embodiment of the invention, illustrating in perspective view the mechanical pad assembly 12 that has a mechanical pad 32 that rotates around a first axis 14 , and a wafer head assembly 16 that has a wafer that rotates around a second axis 18 .
- the wafer rotates within an area that is covered by the mechanical pad 32 , as will be described in further detail hereinafter, which area is within container 20 that keeps various solutions disposed therein.
- a plurality of wafer head assemblies 16 could be associated with each mechanical pad assembly 12
- the apparatus 10 could include a plurality of mechanical pad assemblies 12 as well, each operating on different wafers.
- FIG. 1B illustrates a side cross sectional view of the apparatus 10 taken along line A-A of FIG. 1A according to the present invention. As illustrated, the system 10 is capable of depositing thin metal films onto the wafer.
- Each wafer head assembly 16 includes a nonconductive, preferably circular, head assembly 22 with a cavity that is preferably a few millimeters deep at its center and which cavity may contain a resting pad 25 .
- the semiconductor wafer is loaded into this cavity 22 , backside first, against the resting pad 25 using a conventional type of transport or vacuum mechanism to ensure that the wafer is stationary with respect to the wafer head assembly while in use.
- a nonconductive retaining ring 24 at the periphery of the wafer head assembly 10 includes at least one O-ring or other rubber type seal 26 and a spring loaded cathode contact electrode 28 , which each push against the face of the wafer and hold the wafer in place at its very edge.
- a liquid-tight seal is thus obtained so that the cathode contact electrode 28 is kept isolated from the solution within the container 20 , as described hereinafter.
- the entire back side of the wafer which pushes again resting pad 25 and the front surface areas (typically the outer 1-10 mm surface of the front surface area) which are under this retaining ring 24 will thus be protected from any and all solutions, including electrolyte, as discussed hereinafter.
- the mechanical pad assembly 12 is disposed within container 20 , which container 20 holds the various solutions that will be introduced, as described previously and hereinafter.
- Mechanical pad assembly 12 includes an anode plate 30 that preferably has a thin flat circular shape and is made of a porous or solid conductive material such as copper and/or platinum and is mounted so that it rotates about the second axis 18 , and rests upon a table and bearing support as is known.
- a mechanical pad 32 as is known in the art and used, as example, in chemical mechanical polishing, and preferably one that is made of a nonconductive, porous type material such as polyurethane, is mounted onto the face of the anode plate 30 .
- Th mechanical pad 32 preferably has a circular shape, but may be shaped in any other form so long as it can effectively polish the wafer.
- the electrolyte can be fed to the pad 32 from a reservoir (not shown) located behind the anode plate 32 via a chamber 31 , which chamber 31 then feeds the electrolyte up through the anode plate 30 and pad 32 using the in-channel 34 .
- in-channel 44 can also be used to dispense the electrolyte directly down onto the surface of the pad 32 .
- the wafer head assembly 16 faces toward the mechanical pad assembly 12 , and is pushed down with a controlled force.
- the wafer head assembly 16 rotates around axis 18 using a conventional motorized spindle 36
- the mechanical pad assembly 12 rotates around axis 14 using a conventional motorized spindle 38 .
- Proper drainage channels 40 provide a safe recycling or disposal of electrolyte.
- the electrolyte once placed onto the pad 32 as described above, it can be drained via the drainage channels 40 to a resuscitating reservoir, also not shown, that can replenish and clean the electrolyte, thereby allowing re-use and being environmentally safe.
- the inlet 44 can also be used to apply deionized water when operating in the second mode of the invention, as discussed hereinafter.
- the apparatus 10 applies, using a power source, a negative potential to the cathode contact 28 and a positive potential to the anode 30 .
- the electrolytic solution is introduced through one or both of the in-channels 34 and 44 to the surface of the mechanical polishing pad 32 .
- molecules of metals in electrolyte are ionized and deposited on the surface of the wafer, being attracted thereto by the cathode contact 28 . While this is taking place, there is also performed a mechanical polishing using the mechanical pad assembly 12 .
- This mechanical pad assembly 12 substantially prevents molecules of metals from becoming permanently deposited on surfaces of the wafer where such a deposit is undesired, due to the polishing or rubbing action of the mechanical pad 32 .
- the contaminants or additives referred to above that are presently used to prevent or reduce such depositing are not needed, or alternatively can be used in much smaller percentages. Accordingly, at the conclusion of the first mode of operation, metal is deposited in vias and the like where desired, and is substantially prevented from being deposited in undesired areas.
- a number of different conventional operations can be performed, depending upon the chemicals introduced via the in-channel 44 . If chemical mechanical polishing is desired, a slurry can be introduced, although this specific mode of operation is not preferred since it increases the amount of impurities introduced into the apparatus fluid chamber substantially.
- the apparatus 10 can be used to buff polish the seed layer or be used as an electro polisher by reversing the current polarity (cathode and anode polarity). Further, the apparatus 10 can also be purged with M water if it is necessary to leave the wafer clean but wet with deionized water, and polishing using the mechanical pad 32 with the deionized water can take place. Thereafter, after lifting the wafer off the pad 32 , spin drying of the wafer on the rotating wafer head assembly 12 can take place.
- FIG. 2 illustrates another embodiment of the present invention.
- the wafer is stationery, and electro chemical mechanical deposition apparatus 100 is disposed within a container (not shown) that collects spent solutions.
- the electro chemical mechanical deposition apparatus 100 corresponds in structure in large part to the wafer head assembly 16 previously described with reference to FIG. 1B.
- the electro chemical mechanical deposition apparatus 100 includes a mechanical pad 32 , which is rotated by the spindle shaft 36 .
- Spindle shaft 36 is illustrated as being rotated and moved side to side and held in proper position using DC motor 102 , weights 104 , bearing sets 106 and 108 and springs 110 , all of which are conventional.
- the electrolyte solution is introduced using in passage 34 , and it flows to the desired surface of the wafer through the porous anode 30 and mechanical pad 32 . It is expelled through out-channel 40 .
- FIG. 2 embodiment Operation of the FIG. 2 embodiment is very similar to that of the first mode described with respect to FIGS. 1A and 1B. Specifically, deposition of a conductive material using an electrolyte, such as described previously, in desired vias and/or other areas, is obtained at the same time that mechanical polishing of the surface of the wafer using rotating pad 32 , which may be the shape of a rectangle, a circle, or a pie or the like, takes place.
- the electro chemical mechanical deposition apparatus also reduces the need for pulse generating power supplies because the mechanical pulsing that is generated from the movement of the pad creates sufficient pulsing. This mechanical pulsing is created as a result of the wafer being in contact with the pad as it is moved in relation to the wafer. The benefit of the mechanical pulsing is that it improves grain size and copper film integrity without the need for power supplies with pulsing capabilities.
- FIGS. 4 A- 4 C illustrate yet another preferred embodiment of the present invention.
- the electro chemical mechanical deposition apparatus 200 contains a mechanical pad assembly 210 that corresponds to the mechanical pad assembly 12 and a wafer head assembly 240 that corresponds to the wafer head assembly 16 .
- the electro chemical mechanical deposition apparatus 200 includes a circular or square mechanical pad 212 mounted on a cylindrical anode 214 that rotates about a first axis 216 as illustrated in FIGS. 4A and 4C, whereas the wafer rotates about a second axis 242 as illustrated in FIG. 4B.
- the mechanical pad 212 can have a size that either polishes the entire useable portion of the wafer, or only a section of the wafer at any given time. If only a portion of the wafer is polished at any given time, a drive assembly (not shown) must also be included in order to move the anode 214 , and thereby the mechanical pad 212 , so that it is in contact with the portion of the wafer that needs to be acted upon at that moment in time.
- the belt-shaped mechanical pad 212 polishes the wafer similar to the manner in which a roller paintbrush paints a wall.
- the electrolyte or other solution is introduced to the mechanical pad 212 from a reservoir (not shown) located in proximity to the anode 214 .
- the anode 214 contains an in-channel 224 that includes a passageway 226 within anode 214 and holes 228 that are made in the anode 214 , which together provide a path for the solution to be fed to the mechanical pad 212 .
- the electrolyte solution can be dispensed directly onto the pad 212 through a channel 213 in accordance with the methods described earlier herein.
- the solution will be contained within a non-conductive chamber 230 that is created around the wafer head assembly 240 , and a non-conductive solution containment housing 250 , which housing contains an out-channel 252 . O-rings and other conventional structures, as described earlier herein, to seal the solution within the solution containment housing 250 may be used in this embodiment.
- the electro chemical mechanical deposition apparatus reduces the need for pulse generating power supplies because the mechanical pulsing that is generated from the rotating movement of the pad and wafer creates sufficient pulsing.
Abstract
Description
- 1. Field of the Invention
- The present invention relates to a Method and Apparatus for Electro Chemical Mechanical Deposition, and more particularly, to a method and apparatus that provides for both the deposition and polishing of a conductive material on a semiconductor wafer.
- 2. Background of the Invention
- Metallization of semiconductor wafers, i.e. deposition of a layer of metal on the face of wafers over a barrier/seed layer of metal has important and broad application in the semiconductor industry. Conventionally, aluminum and other metals are deposited as one of many metal layers that make up a semiconductor chip. More recently, there is great interest in the deposition of copper for interconnects on semiconductor chips, since, as compared to aluminum, copper reduces electrical resistance and allows semiconductor chips using copper to run faster with less heat generation, resulting in a significant gain in chip capacity and efficiency.
- Conformal thin film deposition of copper into deep submicron via holes and trenches is becoming more difficult in ULSI chip processing, especially when the feature sizes are decreasing below the 0.25 μm with aspect ratios of greater than 5 to 1. Common chemical vapor deposition and electro plating techniques have been used to fill these deep cavities etched into silicon substrates. These processes so far have yielded a very high cost and defect density for developing and integrating local interconnects for ULSI technology.
- One of the factors that contributes to the high cost is the manner in which the conductive material, and particularly copper, is applied. Specifically, it is well known to apply certain contaminants, known as leveling agents, in the electrolyte solution that prevent or slow down the rate of deposition of the metal to the surface of the wafer substrate. Since these contaminants have a large size in comparison to the size of the typical via that needs to be filled, deposition of the metal on the surface of the wafer is, in part, prevented. This prevention, however, is achieved at the expense of adding contaminants to the electrolytic solution, which results, in part, in vias that do not have the desired conductive characteristics. In particular, the grain size of the deposited conductor, due to the use of such contaminants, is not as large as desired, which thereby results in quality problems for the resulting device, as well as increased expense due to significant annealing times that are subsequently required.
- Further, the cost of achieving the desired structure, in which the conductive material exists in the via, but not on the substrate surface, still requires separate deposition and polishing steps. After the conventional deposition of the metal using an anode, cathode and electrolytic solution containing metal as is known, there is then required a polishing step, which polishing step is, for high performance devices at the present time, typically a chemical-mechanical polishing step. While chemical mechanical polishing achieves the desired result, it achieves it at considerable expense, and requires a great degree of precision in applying a slurry in order to achieve the desired high degree of polish on the conductive surface.
- Accordingly, a less expensive and more accurate manner of applying a conductor to a semiconductor wafer is needed.
- It is an object of the present invention to provide a method and apparatus that both deposits and polishes a conductive material on a semiconductor wafer.
- It is an object of the present invention to provide a method and apparatus that simultaneously deposits and polishes a conductive material on a semiconductor wafer.
- It is an object of the present invention to provide a method and apparatus that simultaneously deposits a conductive material in deep cavities of a semiconductor wafer and polishes/starves electrolytic solution from the top surface area of the semiconductor wafer.
- It is a further object of the present invention to provide a method and apparatus that recirculates the electrolytic solution used in depositing the conductive material on the semiconductor wafer.
- These and other object of the present invention are obtained by depositing a conductive material from an electrolyte solution to a predetermined area of a wafer. The steps that are used when making this application include applying the conductive material to the predetermined area of the wafer using an electrolyte solution disposed on a surface of the wafer, when the wafer is disposed in proximity to an anode, and preventing accumulation of the conductive material to areas other than the predetermined area by mechanically polishing, protecting, or reducing from electrolyte contact to the other areas while the conductive material is being deposited.
- An apparatus that performs this method includes an anode capable of receiving a first potential upon application of power. A cathode or the wafer is spaced from the anode and is capable of receiving a second potential opposite the first potential upon application of power. A pad or a multiple number of pads is/are disposed between the anode and the cathode, the pad being movable with respect to a surface of the wafer and inhibiting or reducing application of the conductive material to certain other areas when power is being supplied to the anode and the cathode. Further, a fluid chamber allows an electrolyte solution to be disposed on the surface of the wafer or the pad and the conductive material to be formed on desired areas of the wafer upon application of power.
- These and other objects and advantages of the present invention will become apparent and more readily appreciated from the following detailed description of the presently preferred exemplary embodiment of the invention taken in conjunction with the accompanying drawings, of which:
- FIGS. 1A and 1B illustrate a first embodiment of the present invention;
- FIG. 2 illustrates a second embodiment of the present invention;
- FIG. 3 illustrates a representative via to be filled with a conductor according to the present invention; and
- FIGS.4A-4C illustrate a third embodiment of the present invention.
- The preferred embodiments of the present invention will now be described. As noted above, conventional processing uses different equipment, at different times, in order to obtain conductive material within vias or at other desired locations on the surface of a semiconductor wafer that contains many different semiconductor chips, but not have the conductive material disposed at undesired locations. Accordingly, the equipment cost needed to manufacture a high quality semiconductor integrated circuit device can be exorbitant.
- The present invention contemplates different embodiments which allow for the same device, termed a “electro chemical mechanical deposition apparatus”, to be used to both deposit a conductive material, as well as then polish or reduce the rate of deposition of that conductive material. The “electro chemical mechanical deposition apparatus” can also be used to simultaneously deposit and/or polish the conductive material. While the present invention can be used with any conductive material, it is especially suited for use with copper as the conductor, and for use in the fabrication of ULSI integrated circuits having submicron features with large aspect ratios. In the various embodiments, the present invention uses conventional components, arranged in a unique manner, in order to achieve the functionalities described herein.
- FIG. 3 is first referred to in order to illustrate a portion of an integrated circuit chip that includes an area in which a via is to be formed. The via, as known in the semiconductor arts, being a conductive material that electrically connects different circuit layers together. As shown in FIG. 3, a via contains a
conductor 2 that can connect a lower levelconductive area 4 with an upper levelconductive area 6, withinsulative material 8 disposed therearound. Of course, it is understood that the present invention can operate upon any metal layer of a multi-layer integrated circuit chip. - FIGS. 1A and 1B illustrate a first embodiment of the invention, which embodiment has two different modes of operation. In a first mode, a conductive metal, preferably copper, or other conductive material, is applied in vias and/or other desired areas using an electrolyte solution, while build-up of the conductive material on undesired areas is eliminated, or at least minimized, due to the mechanical polishing and/or electrolytic solution deprivation to top surface areas of the semiconductor wafer that is described hereinafter. In a second mode of operation, polishing of the wafer, using a conventional chemical mechanical polishing, can be performed using the same device, to the extent that such chemical mechanical polishing is needed. It is contemplated that according to this embodiment of the present invention that in most circumstances only the first mode of operation will be needed. The second mode of operation, and the structure corresponding thereto, are included for circumstances in which an extremely high degree of polish is desired.
- FIG. 1A illustrates an overview of the electro chemical
mechanical deposition apparatus 10 according to the first embodiment of the invention, illustrating in perspective view themechanical pad assembly 12 that has amechanical pad 32 that rotates around afirst axis 14, and awafer head assembly 16 that has a wafer that rotates around asecond axis 18. As illustrated, the wafer rotates within an area that is covered by themechanical pad 32, as will be described in further detail hereinafter, which area is withincontainer 20 that keeps various solutions disposed therein. Although shown as operating upon a single wafer, it is understood that a plurality ofwafer head assemblies 16 could be associated with eachmechanical pad assembly 12, and that theapparatus 10 could include a plurality ofmechanical pad assemblies 12 as well, each operating on different wafers. - FIG. 1B illustrates a side cross sectional view of the
apparatus 10 taken along line A-A of FIG. 1A according to the present invention. As illustrated, thesystem 10 is capable of depositing thin metal films onto the wafer. - Each
wafer head assembly 16 includes a nonconductive, preferably circular,head assembly 22 with a cavity that is preferably a few millimeters deep at its center and which cavity may contain aresting pad 25. The semiconductor wafer is loaded into thiscavity 22, backside first, against theresting pad 25 using a conventional type of transport or vacuum mechanism to ensure that the wafer is stationary with respect to the wafer head assembly while in use. Anonconductive retaining ring 24 at the periphery of thewafer head assembly 10 includes at least one O-ring or otherrubber type seal 26 and a spring loadedcathode contact electrode 28, which each push against the face of the wafer and hold the wafer in place at its very edge. A liquid-tight seal is thus obtained so that thecathode contact electrode 28 is kept isolated from the solution within thecontainer 20, as described hereinafter. The entire back side of the wafer which pushes again restingpad 25 and the front surface areas (typically the outer 1-10 mm surface of the front surface area) which are under this retainingring 24 will thus be protected from any and all solutions, including electrolyte, as discussed hereinafter. - The
mechanical pad assembly 12 is disposed withincontainer 20, whichcontainer 20 holds the various solutions that will be introduced, as described previously and hereinafter.Mechanical pad assembly 12 includes ananode plate 30 that preferably has a thin flat circular shape and is made of a porous or solid conductive material such as copper and/or platinum and is mounted so that it rotates about thesecond axis 18, and rests upon a table and bearing support as is known. Amechanical pad 32, as is known in the art and used, as example, in chemical mechanical polishing, and preferably one that is made of a nonconductive, porous type material such as polyurethane, is mounted onto the face of theanode plate 30. Thmechanical pad 32 preferably has a circular shape, but may be shaped in any other form so long as it can effectively polish the wafer. The electrolyte can be fed to thepad 32 from a reservoir (not shown) located behind theanode plate 32 via achamber 31, whichchamber 31 then feeds the electrolyte up through theanode plate 30 andpad 32 using the in-channel 34. Alternatively, in-channel 44 can also be used to dispense the electrolyte directly down onto the surface of thepad 32. - The
wafer head assembly 16 faces toward themechanical pad assembly 12, and is pushed down with a controlled force. Thewafer head assembly 16 rotates aroundaxis 18 using a conventionalmotorized spindle 36, whereas themechanical pad assembly 12 rotates aroundaxis 14 using a conventionalmotorized spindle 38. -
Proper drainage channels 40 provide a safe recycling or disposal of electrolyte. Thus, once the electrolyte is placed onto thepad 32 as described above, it can be drained via thedrainage channels 40 to a resuscitating reservoir, also not shown, that can replenish and clean the electrolyte, thereby allowing re-use and being environmentally safe. - The
inlet 44 can also be used to apply deionized water when operating in the second mode of the invention, as discussed hereinafter. - In operation according to the first mode of the invention, the
apparatus 10 applies, using a power source, a negative potential to thecathode contact 28 and a positive potential to theanode 30. The electrolytic solution is introduced through one or both of the in-channels mechanical polishing pad 32. When an electric current is established between the two electrodes, molecules of metals in electrolyte are ionized and deposited on the surface of the wafer, being attracted thereto by thecathode contact 28. While this is taking place, there is also performed a mechanical polishing using themechanical pad assembly 12. Thismechanical pad assembly 12 substantially prevents molecules of metals from becoming permanently deposited on surfaces of the wafer where such a deposit is undesired, due to the polishing or rubbing action of themechanical pad 32. Thus, the contaminants or additives referred to above that are presently used to prevent or reduce such depositing are not needed, or alternatively can be used in much smaller percentages. Accordingly, at the conclusion of the first mode of operation, metal is deposited in vias and the like where desired, and is substantially prevented from being deposited in undesired areas. - In a second mode of operation, a number of different conventional operations can be performed, depending upon the chemicals introduced via the in-
channel 44. If chemical mechanical polishing is desired, a slurry can be introduced, although this specific mode of operation is not preferred since it increases the amount of impurities introduced into the apparatus fluid chamber substantially. In the preferred second mode of operation, theapparatus 10 can be used to buff polish the seed layer or be used as an electro polisher by reversing the current polarity (cathode and anode polarity). Further, theapparatus 10 can also be purged with M water if it is necessary to leave the wafer clean but wet with deionized water, and polishing using themechanical pad 32 with the deionized water can take place. Thereafter, after lifting the wafer off thepad 32, spin drying of the wafer on the rotatingwafer head assembly 12 can take place. - FIG. 2 illustrates another embodiment of the present invention. Like reference numerals are used to indicate structure that corresponds to that of FIGS. 1A and 1B described above. In this embodiment of the invention, the wafer is stationery, and electro chemical
mechanical deposition apparatus 100 is disposed within a container (not shown) that collects spent solutions. The electro chemicalmechanical deposition apparatus 100 corresponds in structure in large part to thewafer head assembly 16 previously described with reference to FIG. 1B. In this embodiment, however, the electro chemicalmechanical deposition apparatus 100 includes amechanical pad 32, which is rotated by thespindle shaft 36.Spindle shaft 36 is illustrated as being rotated and moved side to side and held in proper position usingDC motor 102,weights 104, bearing sets 106 and 108 and springs 110, all of which are conventional. - The electrolyte solution is introduced using in
passage 34, and it flows to the desired surface of the wafer through theporous anode 30 andmechanical pad 32. It is expelled through out-channel 40. - Operation of the FIG. 2 embodiment is very similar to that of the first mode described with respect to FIGS. 1A and 1B. Specifically, deposition of a conductive material using an electrolyte, such as described previously, in desired vias and/or other areas, is obtained at the same time that mechanical polishing of the surface of the wafer using
rotating pad 32, which may be the shape of a rectangle, a circle, or a pie or the like, takes place. - The electro chemical mechanical deposition apparatus according to the present embodiment also reduces the need for pulse generating power supplies because the mechanical pulsing that is generated from the movement of the pad creates sufficient pulsing. This mechanical pulsing is created as a result of the wafer being in contact with the pad as it is moved in relation to the wafer. The benefit of the mechanical pulsing is that it improves grain size and copper film integrity without the need for power supplies with pulsing capabilities.
- FIGS.4A-4C illustrate yet another preferred embodiment of the present invention. Like reference numerals are used to indicate structure that corresponds to that of FIGS. 1A, 1B, and 2 described above. In this embodiment of the invention, the electro chemical
mechanical deposition apparatus 200 contains amechanical pad assembly 210 that corresponds to themechanical pad assembly 12 and awafer head assembly 240 that corresponds to thewafer head assembly 16. In this embodiment, the electro chemicalmechanical deposition apparatus 200 includes a circular or squaremechanical pad 212 mounted on acylindrical anode 214 that rotates about afirst axis 216 as illustrated in FIGS. 4A and 4C, whereas the wafer rotates about asecond axis 242 as illustrated in FIG. 4B. - The
mechanical pad 212 can have a size that either polishes the entire useable portion of the wafer, or only a section of the wafer at any given time. If only a portion of the wafer is polished at any given time, a drive assembly (not shown) must also be included in order to move theanode 214, and thereby themechanical pad 212, so that it is in contact with the portion of the wafer that needs to be acted upon at that moment in time. - In operation, it will be appreciated that the belt-shaped
mechanical pad 212 polishes the wafer similar to the manner in which a roller paintbrush paints a wall. While operating, the electrolyte or other solution is introduced to themechanical pad 212 from a reservoir (not shown) located in proximity to theanode 214. In one specific embodiment, theanode 214 contains an in-channel 224 that includes apassageway 226 withinanode 214 andholes 228 that are made in theanode 214, which together provide a path for the solution to be fed to themechanical pad 212. Alternatively, the electrolyte solution can be dispensed directly onto thepad 212 through achannel 213 in accordance with the methods described earlier herein. The solution will be contained within anon-conductive chamber 230 that is created around thewafer head assembly 240, and a non-conductivesolution containment housing 250, which housing contains an out-channel 252. O-rings and other conventional structures, as described earlier herein, to seal the solution within thesolution containment housing 250 may be used in this embodiment. - Again, the electro chemical mechanical deposition apparatus according to the present invention reduces the need for pulse generating power supplies because the mechanical pulsing that is generated from the rotating movement of the pad and wafer creates sufficient pulsing.
- According to the present invention, in any of the embodiments, since mechanical action is used to prevent undesired build-up of a conductor on undesired areas of a wafer surface, leveling agents are not typically needed, or needed in a much smaller percentage than conventionally used. Further a polished smooth and shiny conductive surface can be obtained.
- Although only the above embodiments have been described in detail above, those skilled in the art will readily appreciate that many modifications of the exemplary embodiment are possible without materially departing from the novel teachings and advantages of this invention.
Claims (17)
Priority Applications (1)
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US09/738,561 US6402925B2 (en) | 1998-11-03 | 2000-12-14 | Method and apparatus for electrochemical mechanical deposition |
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US09/201,929 Continuation-In-Part US6176992B1 (en) | 1998-11-03 | 1998-12-01 | Method and apparatus for electro-chemical mechanical deposition |
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US09/738,561 Expired - Fee Related US6402925B2 (en) | 1998-11-03 | 2000-12-14 | Method and apparatus for electrochemical mechanical deposition |
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Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6537144B1 (en) | 2000-02-17 | 2003-03-25 | Applied Materials, Inc. | Method and apparatus for enhanced CMP using metals having reductive properties |
US20030057097A1 (en) * | 2001-09-21 | 2003-03-27 | Applied Materials, Inc. | Method and apparatus for forming metal layers |
US6592742B2 (en) | 2001-07-13 | 2003-07-15 | Applied Materials Inc. | Electrochemically assisted chemical polish |
US6640151B1 (en) | 1999-12-22 | 2003-10-28 | Applied Materials, Inc. | Multi-tool control system, method and medium |
US20030213703A1 (en) * | 2002-05-16 | 2003-11-20 | Applied Materials, Inc. | Method and apparatus for substrate polishing |
US6708074B1 (en) | 2000-08-11 | 2004-03-16 | Applied Materials, Inc. | Generic interface builder |
US20040050817A1 (en) * | 1999-11-29 | 2004-03-18 | Lizhong Sun | Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus |
US20040182721A1 (en) * | 2003-03-18 | 2004-09-23 | Applied Materials, Inc. | Process control in electro-chemical mechanical polishing |
US6811680B2 (en) | 2001-03-14 | 2004-11-02 | Applied Materials Inc. | Planarization of substrates using electrochemical mechanical polishing |
US6837983B2 (en) | 2002-01-22 | 2005-01-04 | Applied Materials, Inc. | Endpoint detection for electro chemical mechanical polishing and electropolishing processes |
US6848970B2 (en) | 2002-09-16 | 2005-02-01 | Applied Materials, Inc. | Process control in electrochemically assisted planarization |
US6896776B2 (en) | 2000-12-18 | 2005-05-24 | Applied Materials Inc. | Method and apparatus for electro-chemical processing |
US6962524B2 (en) | 2000-02-17 | 2005-11-08 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US6991526B2 (en) | 2002-09-16 | 2006-01-31 | Applied Materials, Inc. | Control of removal profile in electrochemically assisted CMP |
US7066800B2 (en) | 2000-02-17 | 2006-06-27 | Applied Materials Inc. | Conductive polishing article for electrochemical mechanical polishing |
US20060166500A1 (en) * | 2005-01-26 | 2006-07-27 | Applied Materials, Inc. | Electroprocessing profile control |
US20060163074A1 (en) * | 2002-09-16 | 2006-07-27 | Applied Materials, Inc. | Algorithm for real-time process control of electro-polishing |
US7101799B2 (en) * | 2001-06-19 | 2006-09-05 | Applied Materials, Inc. | Feedforward and feedback control for conditioning of chemical mechanical polishing pad |
US7422982B2 (en) | 2006-07-07 | 2008-09-09 | Applied Materials, Inc. | Method and apparatus for electroprocessing a substrate with edge profile control |
US7670468B2 (en) | 2000-02-17 | 2010-03-02 | Applied Materials, Inc. | Contact assembly and method for electrochemical mechanical processing |
US7678245B2 (en) | 2000-02-17 | 2010-03-16 | Applied Materials, Inc. | Method and apparatus for electrochemical mechanical processing |
US7698012B2 (en) | 2001-06-19 | 2010-04-13 | Applied Materials, Inc. | Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing |
US7790015B2 (en) | 2002-09-16 | 2010-09-07 | Applied Materials, Inc. | Endpoint for electroprocessing |
US7966087B2 (en) | 2002-11-15 | 2011-06-21 | Applied Materials, Inc. | Method, system and medium for controlling manufacture process having multivariate input parameters |
US8005634B2 (en) | 2002-03-22 | 2011-08-23 | Applied Materials, Inc. | Copper wiring module control |
US8070909B2 (en) | 2001-06-19 | 2011-12-06 | Applied Materials, Inc. | Feedback control of chemical mechanical polishing device providing manipulation of removal rate profiles |
US20130112563A1 (en) * | 2011-11-04 | 2013-05-09 | Integran Technologies Inc. | Flow-through consumable anodes |
US8504620B2 (en) | 2000-11-30 | 2013-08-06 | Applied Materials, Inc. | Dynamic subject information generation in message services of distributed object systems |
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Families Citing this family (282)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7449098B1 (en) | 1999-10-05 | 2008-11-11 | Novellus Systems, Inc. | Method for planar electroplating |
US6709565B2 (en) * | 1998-10-26 | 2004-03-23 | Novellus Systems, Inc. | Method and apparatus for uniform electropolishing of damascene ic structures by selective agitation |
US7531079B1 (en) | 1998-10-26 | 2009-05-12 | Novellus Systems, Inc. | Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation |
US6719615B1 (en) | 2000-10-10 | 2004-04-13 | Beaver Creek Concepts Inc | Versatile wafer refining |
US6610190B2 (en) | 2000-11-03 | 2003-08-26 | Nutool, Inc. | Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate |
US7204924B2 (en) * | 1998-12-01 | 2007-04-17 | Novellus Systems, Inc. | Method and apparatus to deposit layers with uniform properties |
US6497800B1 (en) * | 2000-03-17 | 2002-12-24 | Nutool Inc. | Device providing electrical contact to the surface of a semiconductor workpiece during metal plating |
US6413388B1 (en) * | 2000-02-23 | 2002-07-02 | Nutool Inc. | Pad designs and structures for a versatile materials processing apparatus |
US7425250B2 (en) * | 1998-12-01 | 2008-09-16 | Novellus Systems, Inc. | Electrochemical mechanical processing apparatus |
US6902659B2 (en) * | 1998-12-01 | 2005-06-07 | Asm Nutool, Inc. | Method and apparatus for electro-chemical mechanical deposition |
US7204917B2 (en) * | 1998-12-01 | 2007-04-17 | Novellus Systems, Inc. | Workpiece surface influencing device designs for electrochemical mechanical processing and method of using the same |
US7427337B2 (en) * | 1998-12-01 | 2008-09-23 | Novellus Systems, Inc. | System for electropolishing and electrochemical mechanical polishing |
US7578923B2 (en) * | 1998-12-01 | 2009-08-25 | Novellus Systems, Inc. | Electropolishing system and process |
US6534116B2 (en) * | 2000-08-10 | 2003-03-18 | Nutool, Inc. | Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence |
US7097755B2 (en) * | 1998-12-01 | 2006-08-29 | Asm Nutool, Inc. | Electrochemical mechanical processing with advancible sweeper |
US6251235B1 (en) | 1999-03-30 | 2001-06-26 | Nutool, Inc. | Apparatus for forming an electrical contact with a semiconductor substrate |
US6409904B1 (en) * | 1998-12-01 | 2002-06-25 | Nutool, Inc. | Method and apparatus for depositing and controlling the texture of a thin film |
EP1052062A1 (en) * | 1999-05-03 | 2000-11-15 | Applied Materials, Inc. | Pré-conditioning fixed abrasive articles |
WO2000077278A1 (en) * | 1999-06-14 | 2000-12-21 | Cvc Products, Inc. | Method and apparatus for electroplating depressions of a substrate simultaneously preventing plating on the substrate surface using a membrane cover |
US6319834B1 (en) * | 1999-08-18 | 2001-11-20 | Advanced Micro Devices, Inc. | Method and apparatus for improved planarity metallization by electroplating and CMP |
US6383934B1 (en) | 1999-09-02 | 2002-05-07 | Micron Technology, Inc. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids |
US6355153B1 (en) * | 1999-09-17 | 2002-03-12 | Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
US6653226B1 (en) * | 2001-01-09 | 2003-11-25 | Novellus Systems, Inc. | Method for electrochemical planarization of metal surfaces |
US6756307B1 (en) * | 1999-10-05 | 2004-06-29 | Novellus Systems, Inc. | Apparatus for electrically planarizing semiconductor wafers |
JP2001188254A (en) * | 1999-10-21 | 2001-07-10 | Matsushita Electric Ind Co Ltd | Selective electrochemical processor within substrate, selective chemical processor within substrate, and examination and correction method of active substrate |
US6341998B1 (en) | 1999-11-04 | 2002-01-29 | Vlsi Technology, Inc. | Integrated circuit (IC) plating deposition system and method |
US6379223B1 (en) | 1999-11-29 | 2002-04-30 | Applied Materials, Inc. | Method and apparatus for electrochemical-mechanical planarization |
EP1174912A4 (en) * | 1999-12-24 | 2009-11-25 | Ebara Corp | Semiconductor wafer processing apparatus and processing method |
US6632335B2 (en) * | 1999-12-24 | 2003-10-14 | Ebara Corporation | Plating apparatus |
US6612915B1 (en) | 1999-12-27 | 2003-09-02 | Nutool Inc. | Work piece carrier head for plating and polishing |
US6354916B1 (en) | 2000-02-11 | 2002-03-12 | Nu Tool Inc. | Modified plating solution for plating and planarization and process utilizing same |
US7059948B2 (en) * | 2000-12-22 | 2006-06-13 | Applied Materials | Articles for polishing semiconductor substrates |
US20050092621A1 (en) * | 2000-02-17 | 2005-05-05 | Yongqi Hu | Composite pad assembly for electrochemical mechanical processing (ECMP) |
US7374644B2 (en) * | 2000-02-17 | 2008-05-20 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US6979248B2 (en) * | 2002-05-07 | 2005-12-27 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US7125477B2 (en) * | 2000-02-17 | 2006-10-24 | Applied Materials, Inc. | Contacts for electrochemical processing |
US20040020789A1 (en) * | 2000-02-17 | 2004-02-05 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US7077721B2 (en) * | 2000-02-17 | 2006-07-18 | Applied Materials, Inc. | Pad assembly for electrochemical mechanical processing |
US7029365B2 (en) * | 2000-02-17 | 2006-04-18 | Applied Materials Inc. | Pad assembly for electrochemical mechanical processing |
US7303462B2 (en) * | 2000-02-17 | 2007-12-04 | Applied Materials, Inc. | Edge bead removal by an electro polishing process |
US20080156657A1 (en) * | 2000-02-17 | 2008-07-03 | Butterfield Paul D | Conductive polishing article for electrochemical mechanical polishing |
US7303662B2 (en) * | 2000-02-17 | 2007-12-04 | Applied Materials, Inc. | Contacts for electrochemical processing |
US6991528B2 (en) * | 2000-02-17 | 2006-01-31 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US20060131177A1 (en) * | 2000-02-23 | 2006-06-22 | Jeffrey Bogart | Means to eliminate bubble entrapment during electrochemical processing of workpiece surface |
US20090020437A1 (en) * | 2000-02-23 | 2009-01-22 | Basol Bulent M | Method and system for controlled material removal by electrochemical polishing |
US7141146B2 (en) * | 2000-02-23 | 2006-11-28 | Asm Nutool, Inc. | Means to improve center to edge uniformity of electrochemical mechanical processing of workpiece surface |
US6482307B2 (en) | 2000-05-12 | 2002-11-19 | Nutool, Inc. | Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing |
US6852208B2 (en) * | 2000-03-17 | 2005-02-08 | Nutool, Inc. | Method and apparatus for full surface electrotreating of a wafer |
US6582579B1 (en) * | 2000-03-24 | 2003-06-24 | Nutool, Inc. | Methods for repairing defects on a semiconductor substrate |
US20060118425A1 (en) * | 2000-04-19 | 2006-06-08 | Basol Bulent M | Process to minimize and/or eliminate conductive material coating over the top surface of a patterned substrate |
AU2001247428A1 (en) * | 2000-04-19 | 2001-11-07 | Nutool, Inc. | Process to minimize and/or eliminate conductive material coating over the top surface of a patterned substrate and layer structure made thereby |
US6313038B1 (en) | 2000-04-26 | 2001-11-06 | Micron Technology, Inc. | Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates |
AU2001247109A1 (en) * | 2000-04-27 | 2001-11-12 | Nutool, Inc. | Conductive structure for use in multi-level metallization and process |
WO2001084621A1 (en) * | 2000-04-27 | 2001-11-08 | Ebara Corporation | Rotation holding device and semiconductor substrate processing device |
KR100502330B1 (en) * | 2000-04-29 | 2005-07-20 | 삼성에스디아이 주식회사 | Base panel having a partition and plasma display palel utilizing the same |
US6387289B1 (en) * | 2000-05-04 | 2002-05-14 | Micron Technology, Inc. | Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US7195696B2 (en) * | 2000-05-11 | 2007-03-27 | Novellus Systems, Inc. | Electrode assembly for electrochemical processing of workpiece |
US6695962B2 (en) | 2001-05-01 | 2004-02-24 | Nutool Inc. | Anode designs for planar metal deposits with enhanced electrolyte solution blending and process of supplying electrolyte solution using such designs |
US6478936B1 (en) * | 2000-05-11 | 2002-11-12 | Nutool Inc. | Anode assembly for plating and planarizing a conductive layer |
TWI228548B (en) * | 2000-05-26 | 2005-03-01 | Ebara Corp | Apparatus for processing substrate and apparatus for processing treatment surface of substrate |
US6612901B1 (en) * | 2000-06-07 | 2003-09-02 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US7754061B2 (en) * | 2000-08-10 | 2010-07-13 | Novellus Systems, Inc. | Method for controlling conductor deposition on predetermined portions of a wafer |
US6921551B2 (en) * | 2000-08-10 | 2005-07-26 | Asm Nutool, Inc. | Plating method and apparatus for controlling deposition on predetermined portions of a workpiece |
US7153195B2 (en) * | 2000-08-30 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatus for selectively removing conductive material from a microelectronic substrate |
US7134934B2 (en) * | 2000-08-30 | 2006-11-14 | Micron Technology, Inc. | Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium |
US7129160B2 (en) * | 2002-08-29 | 2006-10-31 | Micron Technology, Inc. | Method for simultaneously removing multiple conductive materials from microelectronic substrates |
US7153410B2 (en) * | 2000-08-30 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces |
US7192335B2 (en) * | 2002-08-29 | 2007-03-20 | Micron Technology, Inc. | Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates |
US7160176B2 (en) * | 2000-08-30 | 2007-01-09 | Micron Technology, Inc. | Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate |
US7094131B2 (en) * | 2000-08-30 | 2006-08-22 | Micron Technology, Inc. | Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material |
US7074113B1 (en) * | 2000-08-30 | 2006-07-11 | Micron Technology, Inc. | Methods and apparatus for removing conductive material from a microelectronic substrate |
US7112121B2 (en) * | 2000-08-30 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
US7220166B2 (en) * | 2000-08-30 | 2007-05-22 | Micron Technology, Inc. | Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate |
US7078308B2 (en) * | 2002-08-29 | 2006-07-18 | Micron Technology, Inc. | Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate |
US6867448B1 (en) | 2000-08-31 | 2005-03-15 | Micron Technology, Inc. | Electro-mechanically polished structure |
WO2002023613A2 (en) * | 2000-09-15 | 2002-03-21 | Rodel Holdings, Inc. | Metal cmp process with reduced dishing |
US6746589B2 (en) * | 2000-09-20 | 2004-06-08 | Ebara Corporation | Plating method and plating apparatus |
US6464855B1 (en) | 2000-10-04 | 2002-10-15 | Speedfam-Ipec Corporation | Method and apparatus for electrochemical planarization of a workpiece |
US7377836B1 (en) | 2000-10-10 | 2008-05-27 | Beaver Creek Concepts Inc | Versatile wafer refining |
US20020104764A1 (en) * | 2000-11-20 | 2002-08-08 | Gautam Banerjee | Electropolishing and chemical mechanical planarization |
US20040170753A1 (en) * | 2000-12-18 | 2004-09-02 | Basol Bulent M. | Electrochemical mechanical processing using low temperature process environment |
US6946066B2 (en) * | 2001-07-20 | 2005-09-20 | Asm Nutool, Inc. | Multi step electrodeposition process for reducing defects and minimizing film thickness |
US6943112B2 (en) * | 2002-07-22 | 2005-09-13 | Asm Nutool, Inc. | Defect-free thin and planar film processing |
US6802946B2 (en) | 2000-12-21 | 2004-10-12 | Nutool Inc. | Apparatus for controlling thickness uniformity of electroplated and electroetched layers |
US7172497B2 (en) * | 2001-01-05 | 2007-02-06 | Asm Nutool, Inc. | Fabrication of semiconductor interconnect structures |
US6866763B2 (en) * | 2001-01-17 | 2005-03-15 | Asm Nutool. Inc. | Method and system monitoring and controlling film thickness profile during plating and electroetching |
US6613200B2 (en) | 2001-01-26 | 2003-09-02 | Applied Materials, Inc. | Electro-chemical plating with reduced thickness and integration with chemical mechanical polisher into a single platform |
US6736952B2 (en) * | 2001-02-12 | 2004-05-18 | Speedfam-Ipec Corporation | Method and apparatus for electrochemical planarization of a workpiece |
US7204743B2 (en) * | 2001-02-27 | 2007-04-17 | Novellus Systems, Inc. | Integrated circuit interconnect fabrication systems |
JP2002254248A (en) * | 2001-02-28 | 2002-09-10 | Sony Corp | Electrochemical machining device |
US7201829B2 (en) * | 2001-03-01 | 2007-04-10 | Novellus Systems, Inc. | Mask plate design |
US7323416B2 (en) * | 2001-03-14 | 2008-01-29 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US6899804B2 (en) * | 2001-12-21 | 2005-05-31 | Applied Materials, Inc. | Electrolyte composition and treatment for electrolytic chemical mechanical polishing |
US7160432B2 (en) | 2001-03-14 | 2007-01-09 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US20060169597A1 (en) * | 2001-03-14 | 2006-08-03 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7582564B2 (en) * | 2001-03-14 | 2009-09-01 | Applied Materials, Inc. | Process and composition for conductive material removal by electrochemical mechanical polishing |
US7232514B2 (en) | 2001-03-14 | 2007-06-19 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7128825B2 (en) | 2001-03-14 | 2006-10-31 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US6869515B2 (en) | 2001-03-30 | 2005-03-22 | Uri Cohen | Enhanced electrochemical deposition (ECD) filling of high aspect ratio openings |
US6508925B2 (en) * | 2001-03-30 | 2003-01-21 | Siemens Westinghouse Power Corporation | Automated brush plating process for solid oxide fuel cells |
US6932896B2 (en) | 2001-03-30 | 2005-08-23 | Nutool, Inc. | Method and apparatus for avoiding particle accumulation in electrodeposition |
US6572755B2 (en) * | 2001-04-11 | 2003-06-03 | Speedfam-Ipec Corporation | Method and apparatus for electrochemically depositing a material onto a workpiece surface |
US6852630B2 (en) * | 2001-04-23 | 2005-02-08 | Asm Nutool, Inc. | Electroetching process and system |
US7344432B2 (en) * | 2001-04-24 | 2008-03-18 | Applied Materials, Inc. | Conductive pad with ion exchange membrane for electrochemical mechanical polishing |
US7137879B2 (en) * | 2001-04-24 | 2006-11-21 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US6908540B2 (en) * | 2001-07-13 | 2005-06-21 | Applied Materials, Inc. | Method and apparatus for encapsulation of an edge of a substrate during an electro-chemical deposition process |
TW584899B (en) * | 2001-07-20 | 2004-04-21 | Nutool Inc | Planar metal electroprocessing |
US6722943B2 (en) * | 2001-08-24 | 2004-04-20 | Micron Technology, Inc. | Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces |
JP3961377B2 (en) * | 2001-09-20 | 2007-08-22 | 株式会社リコー | Optical scanning apparatus and image forming apparatus |
US7238092B2 (en) | 2001-09-28 | 2007-07-03 | Novellus Systems, Inc. | Low-force electrochemical mechanical processing method and apparatus |
US6706158B2 (en) * | 2001-09-28 | 2004-03-16 | Intel Corporation | Electrochemical mechanical planarization |
US20030072639A1 (en) * | 2001-10-17 | 2003-04-17 | Applied Materials, Inc. | Substrate support |
US6815354B2 (en) * | 2001-10-27 | 2004-11-09 | Nutool, Inc. | Method and structure for thru-mask contact electrodeposition |
AU2002363479A1 (en) * | 2001-11-02 | 2003-05-19 | Nutool, Inc. | Electrochemical mechanical processing with advancible sweeper |
US6776693B2 (en) | 2001-12-19 | 2004-08-17 | Applied Materials Inc. | Method and apparatus for face-up substrate polishing |
US20070295611A1 (en) * | 2001-12-21 | 2007-12-27 | Liu Feng Q | Method and composition for polishing a substrate |
US6802955B2 (en) | 2002-01-11 | 2004-10-12 | Speedfam-Ipec Corporation | Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface |
JP3759043B2 (en) * | 2002-01-21 | 2006-03-22 | 東京エレクトロン株式会社 | Anodizing apparatus and anodizing method |
US6951599B2 (en) * | 2002-01-22 | 2005-10-04 | Applied Materials, Inc. | Electropolishing of metallic interconnects |
US20030146102A1 (en) * | 2002-02-05 | 2003-08-07 | Applied Materials, Inc. | Method for forming copper interconnects |
US7131889B1 (en) * | 2002-03-04 | 2006-11-07 | Micron Technology, Inc. | Method for planarizing microelectronic workpieces |
US20030168344A1 (en) * | 2002-03-08 | 2003-09-11 | Applied Materials, Inc. | Selective metal deposition for electrochemical plating |
US6793797B2 (en) * | 2002-03-26 | 2004-09-21 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for integrating an electrodeposition and electro-mechanical polishing process |
US20030201185A1 (en) * | 2002-04-29 | 2003-10-30 | Applied Materials, Inc. | In-situ pre-clean for electroplating process |
US20050194681A1 (en) * | 2002-05-07 | 2005-09-08 | Yongqi Hu | Conductive pad with high abrasion |
US7189313B2 (en) * | 2002-05-09 | 2007-03-13 | Applied Materials, Inc. | Substrate support with fluid retention band |
US20030209523A1 (en) * | 2002-05-09 | 2003-11-13 | Applied Materials, Inc. | Planarization by chemical polishing for ULSI applications |
US7774726B2 (en) * | 2002-06-07 | 2010-08-10 | Cadence Design Systems, Inc. | Dummy fill for integrated circuits |
US7152215B2 (en) * | 2002-06-07 | 2006-12-19 | Praesagus, Inc. | Dummy fill for integrated circuits |
US7853904B2 (en) * | 2002-06-07 | 2010-12-14 | Cadence Design Systems, Inc. | Method and system for handling process related variations for integrated circuits based upon reflections |
US7363099B2 (en) * | 2002-06-07 | 2008-04-22 | Cadence Design Systems, Inc. | Integrated circuit metrology |
AU2003274370A1 (en) * | 2002-06-07 | 2003-12-22 | Praesagus, Inc. | Characterization adn reduction of variation for integrated circuits |
US7393755B2 (en) * | 2002-06-07 | 2008-07-01 | Cadence Design Systems, Inc. | Dummy fill for integrated circuits |
US7712056B2 (en) * | 2002-06-07 | 2010-05-04 | Cadence Design Systems, Inc. | Characterization and verification for integrated circuit designs |
US7124386B2 (en) * | 2002-06-07 | 2006-10-17 | Praesagus, Inc. | Dummy fill for integrated circuits |
US20030229875A1 (en) * | 2002-06-07 | 2003-12-11 | Smith Taber H. | Use of models in integrated circuit fabrication |
US6808611B2 (en) * | 2002-06-27 | 2004-10-26 | Applied Materials, Inc. | Methods in electroanalytical techniques to analyze organic components in plating baths |
US6869335B2 (en) | 2002-07-08 | 2005-03-22 | Micron Technology, Inc. | Retaining rings, planarizing apparatuses including retaining rings, and methods for planarizing micro-device workpieces |
KR100559041B1 (en) * | 2002-07-11 | 2006-03-10 | 매그나칩 반도체 유한회사 | Method of forming a copper wiring in a semiconductor device |
US20040072445A1 (en) * | 2002-07-11 | 2004-04-15 | Applied Materials, Inc. | Effective method to improve surface finish in electrochemically assisted CMP |
US7341502B2 (en) * | 2002-07-18 | 2008-03-11 | Micron Technology, Inc. | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces |
US7799200B1 (en) | 2002-07-29 | 2010-09-21 | Novellus Systems, Inc. | Selective electrochemical accelerator removal |
US6860798B2 (en) * | 2002-08-08 | 2005-03-01 | Micron Technology, Inc. | Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces |
US7094695B2 (en) * | 2002-08-21 | 2006-08-22 | Micron Technology, Inc. | Apparatus and method for conditioning a polishing pad used for mechanical and/or chemical-mechanical planarization |
US7004817B2 (en) | 2002-08-23 | 2006-02-28 | Micron Technology, Inc. | Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces |
US7011566B2 (en) * | 2002-08-26 | 2006-03-14 | Micron Technology, Inc. | Methods and systems for conditioning planarizing pads used in planarizing substrates |
US6841991B2 (en) * | 2002-08-29 | 2005-01-11 | Micron Technology, Inc. | Planarity diagnostic system, E.G., for microelectronic component test systems |
US7008299B2 (en) * | 2002-08-29 | 2006-03-07 | Micron Technology, Inc. | Apparatus and method for mechanical and/or chemical-mechanical planarization of micro-device workpieces |
US20050040049A1 (en) * | 2002-09-20 | 2005-02-24 | Rimma Volodarsky | Anode assembly for plating and planarizing a conductive layer |
US20040084318A1 (en) * | 2002-11-05 | 2004-05-06 | Uri Cohen | Methods and apparatus for activating openings and for jets plating |
US6796887B2 (en) | 2002-11-13 | 2004-09-28 | Speedfam-Ipec Corporation | Wear ring assembly |
US7442282B2 (en) * | 2002-12-02 | 2008-10-28 | Ebara Corporation | Electrolytic processing apparatus and method |
US6835657B2 (en) | 2002-12-02 | 2004-12-28 | Applied Materials, Inc. | Method for recrystallizing metal in features of a semiconductor chip |
US20040149584A1 (en) * | 2002-12-27 | 2004-08-05 | Mizuki Nagai | Plating method |
US6875322B1 (en) | 2003-01-15 | 2005-04-05 | Lam Research Corporation | Electrochemical assisted CMP |
US7074114B2 (en) * | 2003-01-16 | 2006-07-11 | Micron Technology, Inc. | Carrier assemblies, polishing machines including carrier assemblies, and methods for polishing micro-device workpieces |
US7138039B2 (en) * | 2003-01-21 | 2006-11-21 | Applied Materials, Inc. | Liquid isolation of contact rings |
JP2004223665A (en) * | 2003-01-24 | 2004-08-12 | Sony Corp | Electrolytic polishing device and polishing method |
US7087144B2 (en) * | 2003-01-31 | 2006-08-08 | Applied Materials, Inc. | Contact ring with embedded flexible contacts |
US7025861B2 (en) * | 2003-02-06 | 2006-04-11 | Applied Materials | Contact plating apparatus |
US6884152B2 (en) | 2003-02-11 | 2005-04-26 | Micron Technology, Inc. | Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces |
US6872132B2 (en) * | 2003-03-03 | 2005-03-29 | Micron Technology, Inc. | Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces |
US7842169B2 (en) * | 2003-03-04 | 2010-11-30 | Applied Materials, Inc. | Method and apparatus for local polishing control |
US6864181B2 (en) * | 2003-03-27 | 2005-03-08 | Lam Research Corporation | Method and apparatus to form a planarized Cu interconnect layer using electroless membrane deposition |
US20070131563A1 (en) * | 2003-04-14 | 2007-06-14 | Asm Nutool, Inc. | Means to improve center to edge uniformity of electrochemical mechanical processing of workpiece surface |
US7025860B2 (en) * | 2003-04-22 | 2006-04-11 | Novellus Systems, Inc. | Method and apparatus for the electrochemical deposition and removal of a material on a workpiece surface |
ATE418621T1 (en) * | 2003-04-24 | 2009-01-15 | Afshin Ahmadian | METHOD FOR DETECTING ALLEL-SPECIFIC MUTATIONS |
US6935929B2 (en) | 2003-04-28 | 2005-08-30 | Micron Technology, Inc. | Polishing machines including under-pads and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces |
US7131891B2 (en) * | 2003-04-28 | 2006-11-07 | Micron Technology, Inc. | Systems and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces |
KR20040094560A (en) * | 2003-05-03 | 2004-11-10 | 삼성전자주식회사 | Apparatus and Method For Electropolishing Metal On Semiconductor Devices |
JP2004342750A (en) * | 2003-05-14 | 2004-12-02 | Toshiba Corp | Method of manufacturing electronic device |
JP2004356117A (en) * | 2003-05-26 | 2004-12-16 | Ebara Corp | Method and apparatus for processing substrate |
JP2004353061A (en) * | 2003-05-30 | 2004-12-16 | Ebara Corp | Electrolysis method and apparatus |
US7390429B2 (en) * | 2003-06-06 | 2008-06-24 | Applied Materials, Inc. | Method and composition for electrochemical mechanical polishing processing |
US7223685B2 (en) * | 2003-06-23 | 2007-05-29 | Intel Corporation | Damascene fabrication with electrochemical layer removal |
JP2005029830A (en) * | 2003-07-10 | 2005-02-03 | Ebara Corp | Plating device and plating method |
US20050016861A1 (en) * | 2003-07-24 | 2005-01-27 | Thomas Laursen | Method for planarizing a work piece |
US7763548B2 (en) * | 2003-08-06 | 2010-07-27 | Micron Technology, Inc. | Microfeature workpiece processing system for, e.g., semiconductor wafer analysis |
US7250104B2 (en) * | 2003-08-08 | 2007-07-31 | Novellus Systems, Inc. | Method and system for optically enhanced metal planarization |
US7030603B2 (en) * | 2003-08-21 | 2006-04-18 | Micron Technology, Inc. | Apparatuses and methods for monitoring rotation of a conductive microfeature workpiece |
US6848977B1 (en) | 2003-08-29 | 2005-02-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad for electrochemical mechanical polishing |
JP4423356B2 (en) * | 2003-09-02 | 2010-03-03 | 株式会社荏原製作所 | Substrate plating equipment |
US20050051437A1 (en) * | 2003-09-04 | 2005-03-10 | Keiichi Kurashina | Plating apparatus and plating method |
US7112122B2 (en) * | 2003-09-17 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for removing conductive material from a microelectronic substrate |
US20050092620A1 (en) * | 2003-10-01 | 2005-05-05 | Applied Materials, Inc. | Methods and apparatus for polishing a substrate |
US8158532B2 (en) * | 2003-10-20 | 2012-04-17 | Novellus Systems, Inc. | Topography reduction and control by selective accelerator removal |
US8530359B2 (en) | 2003-10-20 | 2013-09-10 | Novellus Systems, Inc. | Modulated metal removal using localized wet etching |
US20050121141A1 (en) * | 2003-11-13 | 2005-06-09 | Manens Antoine P. | Real time process control for a polishing process |
US7064057B2 (en) * | 2003-11-21 | 2006-06-20 | Asm Nutool, Inc. | Method and apparatus for localized material removal by electrochemical polishing |
US7186164B2 (en) * | 2003-12-03 | 2007-03-06 | Applied Materials, Inc. | Processing pad assembly with zone control |
JP4540981B2 (en) * | 2003-12-25 | 2010-09-08 | 株式会社荏原製作所 | Plating method |
US7479213B2 (en) * | 2003-12-25 | 2009-01-20 | Ebara Corporation | Plating method and plating apparatus |
US20050178666A1 (en) * | 2004-01-13 | 2005-08-18 | Applied Materials, Inc. | Methods for fabrication of a polishing article |
US7390744B2 (en) * | 2004-01-29 | 2008-06-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US20060021974A1 (en) * | 2004-01-29 | 2006-02-02 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7153777B2 (en) * | 2004-02-20 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatuses for electrochemical-mechanical polishing |
US7648622B2 (en) * | 2004-02-27 | 2010-01-19 | Novellus Systems, Inc. | System and method for electrochemical mechanical polishing |
US7125324B2 (en) | 2004-03-09 | 2006-10-24 | 3M Innovative Properties Company | Insulated pad conditioner and method of using same |
US7086927B2 (en) * | 2004-03-09 | 2006-08-08 | Micron Technology, Inc. | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces |
US20050218000A1 (en) * | 2004-04-06 | 2005-10-06 | Applied Materials, Inc. | Conditioning of contact leads for metal plating systems |
US7285195B2 (en) * | 2004-06-24 | 2007-10-23 | Applied Materials, Inc. | Electric field reducing thrust plate |
US20060003566A1 (en) * | 2004-06-30 | 2006-01-05 | Ismail Emesh | Methods and apparatuses for semiconductor fabrication utilizing through-wafer interconnects |
US20060030156A1 (en) * | 2004-08-05 | 2006-02-09 | Applied Materials, Inc. | Abrasive conductive polishing article for electrochemical mechanical polishing |
US7066792B2 (en) * | 2004-08-06 | 2006-06-27 | Micron Technology, Inc. | Shaped polishing pads for beveling microfeature workpiece edges, and associate system and methods |
US7033253B2 (en) * | 2004-08-12 | 2006-04-25 | Micron Technology, Inc. | Polishing pad conditioners having abrasives and brush elements, and associated systems and methods |
US20060043534A1 (en) * | 2004-08-26 | 2006-03-02 | Kirby Kyle K | Microfeature dies with porous regions, and associated methods and systems |
US7566391B2 (en) * | 2004-09-01 | 2009-07-28 | Micron Technology, Inc. | Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media |
US7084064B2 (en) * | 2004-09-14 | 2006-08-01 | Applied Materials, Inc. | Full sequence metal and barrier layer electrochemical mechanical processing |
US7229907B2 (en) * | 2004-09-15 | 2007-06-12 | Tom Wu | Method of forming a damascene structure with integrated planar dielectric layers |
WO2006033315A1 (en) * | 2004-09-24 | 2006-03-30 | Ibiden Co., Ltd. | Plating method and plating apparatus |
US20060183321A1 (en) * | 2004-09-27 | 2006-08-17 | Basol Bulent M | Method for reduction of gap fill defects |
WO2006039436A2 (en) * | 2004-10-01 | 2006-04-13 | Applied Materials, Inc. | Pad design for electrochemical mechanical polishing |
US7520968B2 (en) * | 2004-10-05 | 2009-04-21 | Applied Materials, Inc. | Conductive pad design modification for better wafer-pad contact |
US7247558B2 (en) * | 2004-12-03 | 2007-07-24 | Novellus Systems, Inc. | Method and system for electroprocessing conductive layers |
US20060196778A1 (en) * | 2005-01-28 | 2006-09-07 | Renhe Jia | Tungsten electroprocessing |
US20060169674A1 (en) * | 2005-01-28 | 2006-08-03 | Daxin Mao | Method and composition for polishing a substrate |
US20060234499A1 (en) * | 2005-03-29 | 2006-10-19 | Akira Kodera | Substrate processing method and substrate processing apparatus |
US20060219663A1 (en) * | 2005-03-31 | 2006-10-05 | Applied Materials, Inc. | Metal CMP process on one or more polishing stations using slurries with oxidizers |
US7427340B2 (en) * | 2005-04-08 | 2008-09-23 | Applied Materials, Inc. | Conductive pad |
US20060228934A1 (en) * | 2005-04-12 | 2006-10-12 | Basol Bulent M | Conductive materials for low resistance interconnects and methods of forming the same |
US20060249395A1 (en) * | 2005-05-05 | 2006-11-09 | Applied Material, Inc. | Process and composition for electrochemical mechanical polishing |
US20060249394A1 (en) * | 2005-05-05 | 2006-11-09 | Applied Materials, Inc. | Process and composition for electrochemical mechanical polishing |
US20060252254A1 (en) * | 2005-05-06 | 2006-11-09 | Basol Bulent M | Filling deep and wide openings with defect-free conductor |
US20080029400A1 (en) * | 2005-05-13 | 2008-02-07 | Stephen Mazur | Selective electroplating onto recessed surfaces |
US20070014958A1 (en) * | 2005-07-08 | 2007-01-18 | Chaplin Ernest R | Hanger labels, label assemblies and methods for forming the same |
US7264539B2 (en) * | 2005-07-13 | 2007-09-04 | Micron Technology, Inc. | Systems and methods for removing microfeature workpiece surface defects |
US7851222B2 (en) * | 2005-07-26 | 2010-12-14 | Applied Materials, Inc. | System and methods for measuring chemical concentrations of a plating solution |
US7438626B2 (en) | 2005-08-31 | 2008-10-21 | Micron Technology, Inc. | Apparatus and method for removing material from microfeature workpieces |
US7326105B2 (en) * | 2005-08-31 | 2008-02-05 | Micron Technology, Inc. | Retaining rings, and associated planarizing apparatuses, and related methods for planarizing micro-device workpieces |
US7294049B2 (en) | 2005-09-01 | 2007-11-13 | Micron Technology, Inc. | Method and apparatus for removing material from microfeature workpieces |
US7416975B2 (en) | 2005-09-21 | 2008-08-26 | Novellus Systems, Inc. | Method of forming contact layers on substrates |
US20070111523A1 (en) * | 2005-11-17 | 2007-05-17 | Ismail Emesh | Process for conditioning conductive surfaces after electropolishing |
US20070135024A1 (en) * | 2005-12-08 | 2007-06-14 | Itsuki Kobata | Polishing pad and polishing apparatus |
US20070153453A1 (en) * | 2006-01-05 | 2007-07-05 | Applied Materials, Inc. | Fully conductive pad for electrochemical mechanical processing |
US20070170066A1 (en) * | 2006-01-06 | 2007-07-26 | Beaudry Christopher L | Method for planarization during plating |
US7550070B2 (en) * | 2006-02-03 | 2009-06-23 | Novellus Systems, Inc. | Electrode and pad assembly for processing conductive layers |
US20070218587A1 (en) * | 2006-03-07 | 2007-09-20 | Applied Materials, Inc. | Soft conductive polymer processing pad and method for fabricating the same |
US7485561B2 (en) * | 2006-03-29 | 2009-02-03 | Asm Nutool, Inc. | Filling deep features with conductors in semiconductor manufacturing |
US7625814B2 (en) * | 2006-03-29 | 2009-12-01 | Asm Nutool, Inc. | Filling deep features with conductors in semiconductor manufacturing |
US20070235344A1 (en) * | 2006-04-06 | 2007-10-11 | Applied Materials, Inc. | Process for high copper removal rate with good planarization and surface finish |
US20070251832A1 (en) * | 2006-04-27 | 2007-11-01 | Applied Materials, Inc. | Method and apparatus for electrochemical mechanical polishing of cu with higher liner velocity for better surface finish and higher removal rate during clearance |
US20070254485A1 (en) * | 2006-04-28 | 2007-11-01 | Daxin Mao | Abrasive composition for electrochemical mechanical polishing |
US8500985B2 (en) * | 2006-07-21 | 2013-08-06 | Novellus Systems, Inc. | Photoresist-free metal deposition |
US7732329B2 (en) * | 2006-08-30 | 2010-06-08 | Ipgrip, Llc | Method and apparatus for workpiece surface modification for selective material deposition |
US7754612B2 (en) * | 2007-03-14 | 2010-07-13 | Micron Technology, Inc. | Methods and apparatuses for removing polysilicon from semiconductor workpieces |
US20080237048A1 (en) * | 2007-03-30 | 2008-10-02 | Ismail Emesh | Method and apparatus for selective electrofilling of through-wafer vias |
US8012000B2 (en) * | 2007-04-02 | 2011-09-06 | Applied Materials, Inc. | Extended pad life for ECMP and barrier removal |
US20080293343A1 (en) * | 2007-05-22 | 2008-11-27 | Yuchun Wang | Pad with shallow cells for electrochemical mechanical processing |
CN100582314C (en) * | 2007-09-10 | 2010-01-20 | 厦门致力金刚石工具有限公司 | Polish-plating machine |
US20090065365A1 (en) * | 2007-09-11 | 2009-03-12 | Asm Nutool, Inc. | Method and apparatus for copper electroplating |
US20090078579A1 (en) * | 2007-09-20 | 2009-03-26 | Weibezahn Karl S | Systems And Methods For Electroplating Embossed Features On Substrates |
WO2009045316A1 (en) * | 2007-10-03 | 2009-04-09 | Sifco Selective Plating | Method of plating metal onto titanium |
CN101435100B (en) * | 2007-11-16 | 2011-04-06 | 联华电子股份有限公司 | Fluid region control device and operation method thereof |
WO2009128888A1 (en) * | 2008-04-14 | 2009-10-22 | Hemlock Semiconductor Corporation | Manufacturing apparatus for depositing a material and an electrode for use therein |
WO2009128886A1 (en) * | 2008-04-14 | 2009-10-22 | Hemlock Semiconductor Corporation | Manufacturing apparatus for depositing a material and an electrode for use therein |
US8784565B2 (en) * | 2008-04-14 | 2014-07-22 | Hemlock Semiconductor Corporation | Manufacturing apparatus for depositing a material and an electrode for use therein |
US7884016B2 (en) * | 2009-02-12 | 2011-02-08 | Asm International, N.V. | Liner materials and related processes for 3-D integration |
US8168540B1 (en) | 2009-12-29 | 2012-05-01 | Novellus Systems, Inc. | Methods and apparatus for depositing copper on tungsten |
US9960312B2 (en) | 2010-05-25 | 2018-05-01 | Kurt H. Weiner | Apparatus and methods for fast chemical electrodeposition for fabrication of solar cells |
US8343327B2 (en) | 2010-05-25 | 2013-01-01 | Reel Solar, Inc. | Apparatus and methods for fast chemical electrodeposition for fabrication of solar cells |
US8496511B2 (en) * | 2010-07-15 | 2013-07-30 | 3M Innovative Properties Company | Cathodically-protected pad conditioner and method of use |
CN102744674B (en) * | 2012-07-26 | 2016-10-26 | 上海华虹宏力半导体制造有限公司 | Chemical-mechanical grinding device |
US10385471B2 (en) | 2013-03-18 | 2019-08-20 | Spts Technologies Limited | Electrochemical deposition chamber |
GB2512056B (en) | 2013-03-18 | 2018-04-18 | Spts Technologies Ltd | Electrochemical deposition chamber |
CN103938257A (en) * | 2014-05-08 | 2014-07-23 | 中国科学院宁波材料技术与工程研究所 | Multipurpose electrochemical cell device as well as electroplating and analysis method |
CN104096932B (en) * | 2014-07-09 | 2016-08-03 | 清华大学深圳研究生院 | The preparation method of a kind of electrochemistry micro Process electrode and preparation facilities |
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
WO2016060712A1 (en) | 2014-10-17 | 2016-04-21 | Applied Materials, Inc. | Cmp pad construction with composite material properties using additive manufacturing processes |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
US20160230284A1 (en) | 2015-02-10 | 2016-08-11 | Arcanum Alloy Design, Inc. | Methods and systems for slurry coating |
TWM522954U (en) * | 2015-12-03 | 2016-06-01 | 財團法人工業技術研究院 | Electrical deposition apparatus |
WO2017120003A1 (en) * | 2016-01-06 | 2017-07-13 | Applied Materials, Inc. | Systems and methods for shielding features of a workpiece during electrochemical deposition |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
WO2017201418A1 (en) | 2016-05-20 | 2017-11-23 | Arcanum Alloys, Inc. | Methods and systems for coating a steel substrate |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | Abrasive delivery polishing pads and manufacturing methods thereof |
WO2020050932A1 (en) | 2018-09-04 | 2020-03-12 | Applied Materials, Inc. | Formulations for advanced polishing pads |
JP7183111B2 (en) * | 2019-05-17 | 2022-12-05 | 株式会社荏原製作所 | Plating method, insoluble anode for plating, and plating apparatus |
US20220220628A1 (en) * | 2021-01-13 | 2022-07-14 | Corrdesa, LLC | Electrochemical treatment system |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
CN114905102A (en) * | 2022-06-01 | 2022-08-16 | 南京工业职业技术大学 | Electrolysis device and method of micro cylindrical electrode with porous material as carrier |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3595089A (en) | 1969-09-23 | 1971-07-27 | Frank J Jirik | Rotary grain sampler device |
DE2008664A1 (en) | 1970-02-25 | 1971-09-09 | Licentia Gmbh | Galvanically or chemically assisted mechanic |
US3779887A (en) * | 1972-03-14 | 1973-12-18 | Sifco Ind Inc | Vibratory applicator for electroplating solutions |
US3959089A (en) * | 1972-07-31 | 1976-05-25 | Watts John Dawson | Surface finishing and plating method |
US4610772A (en) | 1985-07-22 | 1986-09-09 | The Carolinch Company | Electrolytic plating apparatus |
US5024735A (en) | 1989-02-15 | 1991-06-18 | Kadija Igor V | Method and apparatus for manufacturing interconnects with fine lines and spacing |
US5171412A (en) | 1991-08-23 | 1992-12-15 | Applied Materials, Inc. | Material deposition method for integrated circuit manufacturing |
JP3200468B2 (en) | 1992-05-21 | 2001-08-20 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | Wafer plating equipment |
DE4324330C2 (en) | 1992-08-01 | 1994-11-17 | Atotech Deutschland Gmbh | Process for the electrolytic treatment of, in particular, flat items to be treated, and arrangement, in particular for carrying out this process |
DE69512971T2 (en) | 1994-08-09 | 2000-05-18 | Ontrak Systems Inc | Linear polisher and wafer planarization process |
US5593344A (en) | 1994-10-11 | 1997-01-14 | Ontrak Systems, Inc. | Wafer polishing machine with fluid bearings and drive systems |
US5755859A (en) | 1995-08-24 | 1998-05-26 | International Business Machines Corporation | Cobalt-tin alloys and their applications for devices, chip interconnections and packaging |
KR100217006B1 (en) * | 1995-10-17 | 1999-09-01 | 미따라이 하지메 | Etching method, process for producing a semiconductor element using said etching method, and apparatus suitable for practicing said etching method |
RU2077611C1 (en) * | 1996-03-20 | 1997-04-20 | Виталий Макарович Рябков | Method and apparatus for treating surfaces |
US5933753A (en) | 1996-12-16 | 1999-08-03 | International Business Machines Corporation | Open-bottomed via liner structure and method for fabricating same |
US5807165A (en) | 1997-03-26 | 1998-09-15 | International Business Machines Corporation | Method of electrochemical mechanical planarization |
US5930669A (en) * | 1997-04-03 | 1999-07-27 | International Business Machines Corporation | Continuous highly conductive metal wiring structures and method for fabricating the same |
JP3462970B2 (en) * | 1997-04-28 | 2003-11-05 | 三菱電機株式会社 | Plating apparatus and plating method |
US5833820A (en) | 1997-06-19 | 1998-11-10 | Advanced Micro Devices, Inc. | Electroplating apparatus |
US6004880A (en) * | 1998-02-20 | 1999-12-21 | Lsi Logic Corporation | Method of single step damascene process for deposition and global planarization |
US6143155A (en) * | 1998-06-11 | 2000-11-07 | Speedfam Ipec Corp. | Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly |
-
1998
- 1998-12-01 US US09/201,929 patent/US6176992B1/en not_active Expired - Lifetime
-
1999
- 1999-11-02 AU AU14617/00A patent/AU1461700A/en not_active Abandoned
- 1999-11-02 CN CNB998141267A patent/CN1214133C/en not_active Expired - Fee Related
- 1999-11-02 WO PCT/US1999/025656 patent/WO2000026443A2/en active Application Filing
- 1999-11-02 EP EP99971474A patent/EP1129237A2/en not_active Withdrawn
- 1999-11-02 JP JP2000579810A patent/JP2002528649A/en not_active Withdrawn
- 1999-11-02 KR KR1020017005603A patent/KR100780071B1/en not_active IP Right Cessation
- 1999-11-09 TW TW088118951A patent/TW523558B/en not_active IP Right Cessation
-
2000
- 2000-06-29 US US09/607,567 patent/US6676822B1/en not_active Expired - Fee Related
- 2000-12-14 US US09/738,561 patent/US6402925B2/en not_active Expired - Fee Related
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US7066800B2 (en) | 2000-02-17 | 2006-06-27 | Applied Materials Inc. | Conductive polishing article for electrochemical mechanical polishing |
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US6962524B2 (en) | 2000-02-17 | 2005-11-08 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US6708074B1 (en) | 2000-08-11 | 2004-03-16 | Applied Materials, Inc. | Generic interface builder |
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US6896776B2 (en) | 2000-12-18 | 2005-05-24 | Applied Materials Inc. | Method and apparatus for electro-chemical processing |
US6811680B2 (en) | 2001-03-14 | 2004-11-02 | Applied Materials Inc. | Planarization of substrates using electrochemical mechanical polishing |
US7783375B2 (en) | 2001-06-19 | 2010-08-24 | Applied Materials, Inc. | Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing |
US7725208B2 (en) | 2001-06-19 | 2010-05-25 | Applied Materials, Inc. | Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing |
US8694145B2 (en) | 2001-06-19 | 2014-04-08 | Applied Materials, Inc. | Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles |
US7698012B2 (en) | 2001-06-19 | 2010-04-13 | Applied Materials, Inc. | Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing |
US8070909B2 (en) | 2001-06-19 | 2011-12-06 | Applied Materials, Inc. | Feedback control of chemical mechanical polishing device providing manipulation of removal rate profiles |
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US6592742B2 (en) | 2001-07-13 | 2003-07-15 | Applied Materials Inc. | Electrochemically assisted chemical polish |
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US7628905B2 (en) | 2002-09-16 | 2009-12-08 | Applied Materials, Inc. | Algorithm for real-time process control of electro-polishing |
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US20080017521A1 (en) * | 2003-03-18 | 2008-01-24 | Manens Antoine P | Process control in electro-chemical mechanical polishing |
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US7709382B2 (en) | 2005-01-26 | 2010-05-04 | Applied Materials, Inc. | Electroprocessing profile control |
US20080047841A1 (en) * | 2005-01-26 | 2008-02-28 | Manens Antoine P | Electroprocessing profile control |
US7655565B2 (en) | 2005-01-26 | 2010-02-02 | Applied Materials, Inc. | Electroprocessing profile control |
US7422982B2 (en) | 2006-07-07 | 2008-09-09 | Applied Materials, Inc. | Method and apparatus for electroprocessing a substrate with edge profile control |
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Also Published As
Publication number | Publication date |
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JP2002528649A (en) | 2002-09-03 |
WO2000026443A2 (en) | 2000-05-11 |
US6176992B1 (en) | 2001-01-23 |
KR100780071B1 (en) | 2007-11-29 |
KR20010092442A (en) | 2001-10-25 |
CN1329681A (en) | 2002-01-02 |
US6676822B1 (en) | 2004-01-13 |
EP1129237A2 (en) | 2001-09-05 |
WO2000026443A3 (en) | 2000-10-12 |
TW523558B (en) | 2003-03-11 |
CN1214133C (en) | 2005-08-10 |
US6402925B2 (en) | 2002-06-11 |
AU1461700A (en) | 2000-05-22 |
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